KR102672615B1 - Method for manufacturing deposition mask - Google Patents

Abstract

Manufacturing of a deposition mask unit requires technology that not only forms high-precision patterns with high precision but also does not generate defect patterns. The method of manufacturing a deposition mask unit includes forming a first resist mask with a first film thickness in an inner region of the first surface of a first support substrate, and forming a first resist mask with a thickness of less than or equal to the first film thickness on the first surface on which the first resist mask is formed. A release layer is formed with a second film thickness of A second support substrate is provided in close contact with the resist film, the first support substrate is separated from the release layer, the photosensitive resist film and the release layer remain on the second support substrate, and the photosensitive resist film protrudes from the release layer. It includes removing, exposing the cross-section of the photosensitive resist film, and forming a deposition mask pattern on the release layer.

Description

Method for manufacturing a deposition mask {METHOD FOR MANUFACTURING DEPOSITION MASK}

One embodiment of the present invention relates to a method for manufacturing a deposition mask. For example, in the manufacture of organic electroluminescence devices, it relates to a method of manufacturing a deposition mask used when forming a light-emitting layer, etc.

Vacuum deposition is known as one of the thin film manufacturing techniques. The vacuum deposition method sublimates or evaporates the material by heating it under high vacuum (hereinafter, sublimation and evaporation are collectively referred to as 'vaporization') to generate vapor of the material, and deposits this vapor into the target area (hereinafter, It is a technology that forms a thin film of a material by solidifying and depositing it in the deposition area. In the vacuum deposition method, a metal mask is used to selectively form a thin film of a material in a desired area and prevent the thin film from being formed in other areas (see Patent Documents 1 and 2).

Japanese Patent Publication No. 2009-87840 Japanese Patent Publication No. 2013-209710

In the manufacturing process of a display device (hereinafter also referred to as an “organic EL display device”) in which pixels are formed with an organic electroluminescent element (hereinafter also referred to as an “organic EL element”), a vacuum deposition method is used to form the organic EL element. Applies. In order to form the light emitting layer of an organic EL element for each pixel, a deposition mask for vacuum deposition having a fine opening pattern corresponding to the pixel size and pitch is used. At this time, if there is a defect in the deposition mask, for example, a part that should be originally open is blocked, it becomes a problem as it becomes a defect in the pixel of the organic EL display device. Therefore, the production of a deposition mask requires a technique that not only forms a high-precision pattern with high precision but also does not generate a defect pattern.

A method of manufacturing a deposition mask according to an embodiment of the present invention includes forming a first resist mask with a first film thickness in an inner region of the first surface of a first support substrate, and forming a first resist mask on the first surface on which the first resist mask is formed. A release layer is formed with a second film thickness less than or equal to the first film thickness, the first resist mask is removed, and the release layer is covered on the release layer, and a photosensitive resist is formed with an end extending outside the release layer. A film is disposed, a second support substrate is provided in close contact with the photosensitive resist film, the first support substrate is separated from the peeling layer, the photosensitive resist film and the peeling layer are left on the second support substrate, and the first support substrate is separated from the peeling layer. It includes removing the protruding photosensitive resist film, exposing a cross section of the photosensitive resist film, and forming a deposition mask pattern on the release layer.

1 is a schematic plan view of a deposition mask unit manufactured by a method according to an embodiment of the present invention.
FIG. 2 shows a cross-sectional structure along line A1-A2 shown in FIG. 1.
3A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
3B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
FIG. 3C is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
FIG. 4A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
FIG. 4B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
5A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
5B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
6A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
6B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
7A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
7B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
8A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
8B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
9A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
9B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
9C is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
10A is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
10B is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.
11 is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to an embodiment of the present invention.
FIG. 12A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to an embodiment of the present invention.
Figure 12b is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to an embodiment of the present invention.
13A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to an embodiment of the present invention.
13B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to an embodiment of the present invention.
14 is a schematic cross-sectional view showing a method of manufacturing a deposition mask according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in many different aspects, and should not be construed as being limited to the description of the embodiments illustrated below. In order to make the explanation clearer, the drawings may schematically express the width, thickness, shape, etc. of each part compared to the actual mode, but are only examples and do not limit the interpretation of the present invention. In addition, in this specification and each drawing, elements similar to those described above with respect to the previous drawings are given the same symbols (or symbols followed by a, b, etc.), and detailed descriptions may be omitted as appropriate. . In addition, the letters appended to “1st” and “2nd” for each element are convenience marks used to distinguish each element, and have no further meaning unless otherwise specified.

In this specification, when a member or region is “above (or below)” another member or region, unless otherwise specified, this refers not only to the case where it is directly above (or directly below) the other member or region, but also to other members or regions. This includes cases where it is above (or below) a member or area, that is, it also includes cases where other components are included above (or below) another member or area.

[First Embodiment]

1. Structure of deposition mask unit

A schematic configuration of a deposition mask unit 100 using a deposition mask manufactured by a method according to an embodiment of the present invention is shown in FIGS. 1 and 2. FIG. 1 shows a schematic plan view of a deposition mask unit, and FIG. 2 shows a cross-sectional structure along the line A1-A2 shown in FIG. 1.

As shown in FIG. 1, the deposition mask unit 100 includes at least one deposition mask 102, a support frame 108 surrounding the at least one deposition mask 102, and a support frame 108. It includes a connection portion 106 connecting at least one deposition mask 102. 1 shows an embodiment in which at least one deposition mask 102 is made of a plurality of deposition masks 102, and the plurality of deposition masks 102 are each fixed to the support frame 108 through a connection portion 106. indicates.

As shown in the inset enlarged view of FIG. 1, the deposition mask 102 has a plurality of openings 103. In the deposition mask 102, a plurality of openings 103 are arranged in a predetermined area to form one mask pattern 104. The deposition mask 102 may include a plurality of such mask patterns 104. The deposition mask 102 is connected to the connection portion 106 in the area where the mask pattern 104 is not formed, and is held by the support frame 108.

As shown in FIG. 2, the deposition mask 102 is a metal plate-shaped member, and the plurality of openings 103 are through holes that penetrate the plate-shaped member. The support frame 108 is provided to support the deposition mask 102 in a flat shape. The support frame 108 may be provided as a grid-shaped frame in order to hold and support the plurality of deposition masks 102 . In the deposition mask unit 100, the support frame 108 corresponds to the size of the mother glass substrate, the mask pattern 104 is arranged to correspond to the individual display panels made in the mother glass substrate, and a plurality of openings 103 ) is arranged corresponding to the arrangement of pixels in the display panel.

The connection portion 106 has a function of connecting the deposition mask 102 and the support frame 108 and fixing them to each other. Accordingly, the support frame 108 does not directly contact the deposition mask 102, but the connecting portion 106 is located in the non-opening portion (area where the mask pattern 104 is not formed) of the deposition mask 102. ) and also contacts the side of the support frame 108.

In addition, an example shown in FIGS. 1 and 2 shows an embodiment in which a plurality of deposition masks 102 are held by the support frame 108, but one embodiment of the present invention is not limited to this, and examples include For example, the support frame 108 may have a configuration in which one deposition mask 102 is held via the connection portion 106.

Such a deposition mask unit 100 is used in the process of forming an organic EL element during the display panel manufacturing process. Specifically, it is used in the process of forming the light emitting layer of an organic EL element by vacuum deposition. In the vacuum deposition process, the deposition area on the mother glass substrate side and the mask pattern 104 on the deposition mask 102 side are arranged to match, and material vapor passes through the plurality of openings 103 and enters the deposition area. Materials are deposited.

The deposition mask 102 and the connection portion 106 contain a zero-valent metal such as nickel (Ni), copper (Cu), titanium (Ti), and chromium (Cr). The material compositions of the deposition mask 102 and the connection portion 106 may be the same. The manufacturing method of the deposition mask 102 and the connecting portion 106 will be described later, but they can be manufactured by a plating method (also called “electroplating” because it is performed by electrolytic plating). The support frame 108 also contains a zero-valent metal, and the metal is selected from nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), etc. For example, the support frame 108 may be formed of an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy includes Carbon (C) may be included.

2. Manufacturing method of metal mask unit

Next, an example of a method for manufacturing a deposition mask and a deposition mask unit according to an embodiment of the present invention will be described with reference to the drawings. These drawings are schematic cross-sectional views of the deposition mask and the deposition mask unit 100, and correspond to FIG. 2.

FIG. 3A shows the step of forming a first resist mask 114 on the first surface of the first support substrate 110. The first support substrate 110 is made of metal, and is made of an insulating material such as glass, quartz, ceramics, or plastic, or copper (Cu), aluminum (Al), titanium (Ti), iron (Fe), nickel (Ni), or cobalt ( It is formed of metals such as Co), chromium (Cr), molybdenum (Mo), and manganese (Mn), or alloys thereof. The alloy may be, for example, an alloy containing iron (Fe) and chromium (Cr), an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy may contain carbon (C). . For example, the first support substrate 110 may be formed of stainless steel containing iron (Fe) as a main component and chromium (Cr) and nickel (Ni).

The first resist mask 114 uses a photosensitive resin material and is formed by photolithography. As a photosensitive resin material, a coating type photoresist or dry film resist (DFR) can be used. The first resist mask 114 is a frame that surrounds the plurality of deposition masks 102 (all of the plurality of deposition masks 102) when they are disposed in the deposition mask unit 100 shown in FIG. 1. It has the form of an older brother.

FIG. 3B shows the steps of forming the release layer 116. The release layer 116 is formed in a region exposed from the frame-shaped first resist mask on the first surface of the first support substrate 110 on which the first resist mask 114 is formed. The release layer 116 is formed of, for example, the same metal material as that forming the deposition mask 102 . The peeling layer 116 is formed of, for example, a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). The peeling layer 116 formed of such a metal material can be manufactured by a plating method. For example, the release layer 116 is manufactured by nickel plating on the first support substrate 110. When forming the release layer 116 by the plating method, the first support substrate 110 may be cleaned and a release agent may be applied to the first surface.

FIG. 3C shows steps for removing the first resist mask 114. The first resist mask 114 is removed using a stripper. An opening 118 is formed in the area where the first resist mask 114 has been removed. In other words, by removing the first resist mask 114 from above the first support substrate 110, the release layer 116 is separated into an inner region 120 and an outer region 122 with the opening 118 in between. do. The peeling layer 116 is formed to have a thickness of 20 μm or more and 200 μm or less, for example, 40 μm or more and 150 μm or less. The peeling layer 116 is formed on the first support substrate 110 using a plating method, sputtering method, or chemical vapor deposition (CVD) method. The uniformity of the film thickness of the peeling layer 116 formed on the first support substrate 110 may be reduced at the outer peripheral portion. Even in this case, by providing the first resist mask 114 on the first support substrate 110, the peeling layer 116 can be separated into an inner region and an outer region.

In this case, as shown in FIG. 4A, the film thickness d1 of the first resist mask 114 is preferably formed to be equal to or thicker than the designed film thickness d2 of the release layer 116. When the peeling layer 116 is formed by plating, the peeling layer 116 grows from the conductive first support substrate 110 in a direction of increasing the film thickness. When the release layer 116 grows to the desired design thickness d2, the film thickness is such that the upper surface of the first resist mask 114 does not contact the release layer 116, so that the subsequent first resist mask 114 The mask peeling process can be performed satisfactorily.

For example, as shown in FIG. 4B, if the release layer 116 is formed thicker than the first resist mask 114 (d2>d1), the release layer 116 is formed to cover the upper surface of the first resist mask 114. It grows. If the first resist mask 114 is removed in this state, a problem arises in that part of the peeling layer 116 is peeled off. That is, when the first resist mask 114 is immersed in a stripping liquid, it swells, and as a result, a part of the peeling layer 116 covered on the upper surface of the first resist mask 114 is pushed up and peeled off, which is a problem. .

In order to eliminate this defect, as described above, the film thickness of the first resist mask 114 is made thicker than the film thickness of the peeling layer 116 to prevent unintentional peeling of the peeling layer 116. can do. As shown in FIG. 4A, the first resist mask 114 has a shape that protrudes from the upper surface of the peeling layer 116, but is removed before forming the peeling layer 116 and moving on to the next process, thereby preventing the subsequent process. The influence can be eliminated.

FIG. 5A shows the step of providing the adhesive layer 124 on the release layer 116. For the adhesive layer 124, it is preferable to use a resist film that has a predetermined adhesive force or adhesive force in an unexposed state. As such a resist film, for example, dry film resist can be used. The adhesive layer 124 preferably covers the entire surface of the inner region 120 of the release layer 116, and has an end that extends to the outside of the release layer 116. The end of the adhesive layer 124 may extend to the outer area 122 of the release layer 116. Since the peeling layer 116 supplied as a film-shaped member has this size, the inner area of the peeling layer 116 can be reliably covered.

As shown in FIG. 5B, the outer peripheral portion of the adhesive layer 124 may be unexposed and the inner region may be exposed. Specifically, in the adhesive layer 124, the outer peripheral portion 132 including the area overlapping the end of the release layer 116 is set as an unexposed area, and the area inside the outer peripheral portion 132 is exposed to become an exposed area. , a treatment to harden the exposed surface may be performed. It is preferable that at least part of the outer area 122 (the area to be exposed) overlaps with the peeling layer 116 . Selective exposure of the adhesive layer 124 can be performed using a photomask. When the photosensitive dry film resist used as the adhesive layer 124 is a positive type, the first photomask 126 in which the light-blocking portion 129 is formed to surround the light-transmitting portion 130 is used. By such exposure treatment, a region (area inside the outer region 122) that is hardened and has reduced adhesive strength compared to the outer region 122 (unexposed region) is formed in the adhesive layer 124.

In addition, as described above, the dry film resist loses its surface adhesion due to exposure treatment, but the portions that are already in contact with other surfaces in an unexposed state maintain the adhesion even after curing by light irradiation.

FIG. 6A shows the step of bonding the release layer 116 to each first support substrate 110 by bringing the adhesive layer 124 into close contact with the first surface of the second support substrate 112 . At this time, most of the adhesive layer 124 was exposed, and its surface lost its adhesive strength. Accordingly, the second support substrate 112 is fixed to the unexposed outer peripheral portion 132 of the adhesive layer 124. On the other hand, the interface between the adhesive layer 124 and the peeling layer 116 is already in close contact before exposure, and although the adhesive force is lost due to exposure, a certain degree of adhesive force is maintained. Additionally, the second support substrate 112 is formed of the same material as the first support substrate 110.

Additionally, the adhesion of the interface between the unexposed outer peripheral portion 132 and the peeling layer 116 can be increased by performing a bake treatment after bonding. Conditions for the bake treatment in this case include 60°C and 1 hour as an example.

FIG. 6B shows the step of peeling the release layer 116 from the first support substrate 110. The peeling layer 116 can be peeled off from the first support substrate 110 by applying a physical force to the interface with the first support substrate 110 . For example, a jig with a sharp tip is pressed against the interface between the first support substrate 110 and the peeling layer 116 to form a portion that becomes the beginning of peeling, and then the first support substrate 110 is removed. The peeling layer 116 can be peeled off from the first support substrate 110 by applying an external force.

At this stage, the portion corresponding to the outer region 122 of the release layer 116 remains in the first support substrate 110 and is not transferred to the second support substrate 112. In this way, by previously separating the release layer 116 into the inner region 120 and the outer region 122, only the inner region 120 can be bonded to the second support substrate 112. Additionally, at this stage, a portion of the outer peripheral portion 132 of the adhesive layer 124 remains protruding from the release layer 116.

FIG. 7A shows the step of removing the outer peripheral portion 132 of the adhesive layer 124 protruding from the release layer 116. A portion of the outer peripheral portion 132 of the adhesive layer 124 protruding from the peeling layer 116 is removed with a chemical solution. Specifically, since the outer peripheral portion 132 is an unexposed portion, the protruding portion can be removed by treatment (development) with a photoresist developer. In addition, the chemical solution is not limited to a developer solution, and an alkaline solution that produces a similar effect may be used.

FIG. 8A shows a state in which a portion of the outer peripheral portion 132 of the adhesive layer 124 protruding from the peeling layer 116 has been removed on the second support substrate 112. A portion of the outer peripheral portion 132 of the adhesive layer 124 is an unexposed portion, but since it is covered with the adhesive layer 124, it remains even in a state of high solubility in the developer. The inner region of the adhesive layer 124 has been exposed to light in the previous process, so its solubility in the developer is reduced, and it remains because it is sandwiched between the release layer 116 and the second support substrate 112. Therefore, a part of the outer peripheral portion 132 of the adhesive layer 124 can be selectively removed by treatment with this developer. As a result, in the adhesive layer 124, the outer peripheral portion 132 (unexposed portion) with strong adhesive force can remain along the outer periphery of the peeling layer 116. By forming such a structure, the peeling layer 116 can be stably held on the second support substrate 112. Additionally, by removing the protruding portion of the outer peripheral portion 132 of the adhesive layer 124 in advance, it is possible to prevent the protruding portion from unintentionally peeling off and becoming a source of oscillation in a subsequent process.

FIG. 7B shows the step of exposing the adhesive layer 124 to light from the cross section and fixing it to the second support substrate 112 and the release layer 116. Since the second support substrate 112 and the release layer 116 are made of metal, exposure processing is performed so that light is irradiated to the cross section of the adhesive layer 124. Exposure processing is performed over the entire outer periphery of the adhesive layer 124. Through this exposure process, an exposure area 136 is formed on the outer periphery of the adhesive layer 124.

FIG. 8B shows a state in which the cross section of the adhesive layer 124 is exposed. When light is irradiated to the cross section of the adhesive layer 124, a predetermined area from the cross section is cured and fixed to the second support substrate 112 and the release layer 116. The adhesive layer 124 is sandwiched between the second support substrate 112 and the peeling layer 116, and an exposed area 136 whose edges are hardened is formed by the exposure process, so that the adhesive layer 124 is in a state of being sandwiched between the second support substrate 112 and the peeling layer 116. Uneven peeling can be prevented.

In this way, according to this embodiment, the first resist mask 114 is removed after the peeling layer 116 is formed, the peeling layer 116 is transferred to the second support substrate 112, and then the adhesive layer 124 is formed. By developing the end area and removing the protruding area, it is possible to prevent dust and foreign matter from occurring during the manufacturing process of the deposition mask unit.

FIG. 9A shows the step of forming the second resist mask 138 on the second support substrate 112 on which the release layer 116 is provided. The second resist mask 138 is formed in a predetermined pattern. That is, it is selectively formed in an area where a plurality of openings 103 and a dummy pattern 140, which will be described later, are formed. For example, a negative photoresist is applied on the release layer 116, and exposure is performed through a photomask so that the areas forming the plurality of openings 103 and the dummy pattern 140 are selectively exposed. Additionally, a positive photoresist is applied on the release layer 116, and exposure is performed through a photomask so that the non-opening portion is selectively exposed. Afterwards, the patterned second resist mask 138 can be obtained by performing development. In addition, the second resist mask 138 is preferably formed on the outer edge of the peeling layer 116 so that the peeling layer 116 can be easily peeled from the deposition mask unit 100.

FIG. 9B shows the steps of forming a plating pattern in an area not covered by the second resist mask 138 and forming the deposition mask 102 using a plating method. The formation of the plating pattern may be performed in one step or may be performed in several steps. When performed in multiple steps, plating may be performed so that different metals are formed in different steps. Additionally, plating may be performed so that the upper surface of the plating pattern is lower or higher than the upper surface of the second resist mask 138. In the latter case, the upper surface of the plating pattern may be flattened by polishing the surface. Afterwards, as shown in FIG. 9C, the second resist mask 138 is removed by etching with a stripper and/or ashing to form a mask pattern through a plurality of openings 103 on the stripping layer 116. The formed deposition mask 102 can be manufactured.

Additionally, as shown in FIGS. 9B and 9C, when forming the deposition mask 102, a dummy pattern 140 is formed spaced apart from the deposition mask 102. The dummy pattern 140 is configured to surround the plurality of deposition masks 102 when viewed from a plan view. Since the dummy pattern 140 and the deposition mask 102 are formed simultaneously, they may have the same composition and thickness.

FIG. 10A shows one form of a protective film 142 for protecting the mask pattern 104 of the deposition mask 102. As the protective film 142, dry film resist can be used. The protective film 142 has a structure in which, for example, the photocurable resin film 144 is sandwiched between the peeling film 145 and the protective film 146. The photocurable resin film 144 contains a negative type photocurable resin. That is, it includes polymers or oligomers that are cured by light. The thickness of the photocurable resin film 144 can be selected arbitrarily, for example, from the range of 20 μm to 500 μm, 50 μm to 200 μm, or 50 μm to 120 μm. The protective film 146 includes a polymer material. As the polymer material, for example, polyolefin, polyimide, polyester, polystyrene, or fluorine-containing polyolefin can be selected.

FIG. 10B shows a state in which the protective film 142 is disposed on the deposition mask 102. The protective film 142 is disposed so that the photocurable resin film 144 is sandwiched between the deposition mask 102 and the protective film 146 after the peeling film 145 is peeled off. The protective film 142 is provided to cover at least all of the mask patterns 104 .

Next, the photocurable resin film 144 is exposed to light. Specifically, as shown in FIG. 11, the second photomask 128 having a light blocking portion 129 and a light transmitting portion 130 is disposed so that the light transmitting portion 130 overlaps the mask pattern 104. , exposure is performed through the second photomask 128. As a result, the solubility of the exposed portion in the developer decreases.

FIG. 12A shows a state in which the photocurable resin film 144 is exposed, the protective film 146 is peeled off, development is performed, and the third resist mask 148 is formed on the mask pattern 104. When a plurality of mask patterns 104 are formed on the release layer 116, a third resist mask 148 is provided for each mask pattern 104, as shown. Additionally, because a support frame is formed on the dummy pattern 140 in a subsequent process, the third resist mask 148 is not provided.

FIG. 12B shows the steps of placing the support frame 108 over the dummy pattern 140. When the plurality of mask patterns 104 are formed, the support frame 108 is disposed between each mask pattern. The support frame 108 may have a shape in which the width of the outer pattern is wide, and the width of the pattern formed inside the outer pattern (pattern formed between the mask patterns 104) is narrow.

FIG. 13A shows steps for forming the connection portion 106 using a plating method. The connection portion 106 grows mainly from a portion of the surface of the deposition mask 102 that is not covered by the support frame 108 and the third resist mask 148. As a result, as shown in FIG. 12A, a connection portion 106 is formed that contacts the top surface of the deposition mask 102 and the side surface of the support frame 108. The deposition mask 102 and the support frame 108 are fixed by this connection portion 106.

The connection portion 106 may be formed so that its thickness is the same as that of the third resist mask 148. Alternatively, the connection portion 106 may be formed to have a thickness smaller than that of the third resist mask 148 or may be formed to be larger as shown in FIG. 12A. When the thickness of the connection portion 106 is greater than the thickness of the third resist mask 148, a more robust bonding force can be provided between the deposition mask 102 and the support frame 108. Meanwhile, by forming the connection portion 106 to have a thickness less than or equal to the thickness of the third resist mask 148, the connection portion 106 is prevented from being formed on the third resist mask 148. Therefore, the third resist mask 148 ), it is possible to prevent defects such as the connection portion 106 being destroyed or the mask pattern 104 being damaged due to this.

By peeling off the third resist mask 148 using a stripper, the deposition mask unit 100 can be formed on the second support substrate 112, as shown in FIG. 12B. Thereafter, the release layer 116 is peeled from the second support substrate 112 and the release layer 116 is peeled from the deposition mask 102, thereby obtaining the deposition mask unit 100 shown in FIG. 2. there is.

In the manufacturing process of the deposition mask unit 100 according to this embodiment, after transferring the release layer 116 to the second support substrate 112, the photocurable resin film 144 is exposed and developed to form a second resist. In the step of forming the mask 138 (FIGS. 12A to 12B) and the step of removing the second resist mask 138 with a stripping solution (FIG. 13A to 13B), wet treatment with a chemical solution is performed. Even in the case where such a wet treatment is performed, the unnecessary portion of the adhesive layer 124 that adheres the release layer 116 is removed in advance (at the stage of the previous process), preventing the generation of dust and foreign matter in the subsequent process. can do. As a result, the manufacturing yield of the deposition mask unit 100 can be improved. For example, it is possible to prevent the adhesion of dust or foreign substances that block the opening 103 during the mask pattern 104 .

[Second Embodiment]

When forming the release layer 116 on the first support substrate 110, a jig may be used instead of forming the first resist mask 114. FIG. 14 shows an example, and the release layer 116 may be manufactured by placing the first support substrate 110 in the frame-type storage jig 150.

The frame-shaped storage jig 150 may be divided into a storage portion 152 that accommodates the first support substrate 110 and a frame-shaped portion 154 that covers the outer edge of the first support substrate 110. By making the frame portion 154 removable from the storage portion 152, the first support substrate 110 can be installed and removed. By using such a frame-type storage jig 150, the frame-type portion 154 can be used as a mask to prevent the peeling layer 116 from being formed around the first support substrate 110.

When forming the peeling layer 116 by a plating method, the frame-type storage jig 150 in which the first support substrate 110 is accommodated is immersed in a plating bath and a plating process is performed. Thereby, the peeling layer 116 can be formed on the first surface of the first support substrate 110.

According to this embodiment, the process of forming the first resist mask 114 can be omitted, and the manufacturing process of the deposition mask unit 100 can be simplified. Since the frame-type storage jig 150 can be used repeatedly, it is possible to save resources and reduce manufacturing costs. The process after forming the release layer 116 is the same as in the first embodiment, and the same effects can be obtained in this embodiment as well.

100: deposition mask unit
102: deposition mask
103: opening
104: Mask pattern
106: connection part
108: support frame
110: first support substrate
112: second support substrate
114: first resist mask
116: peeling layer
118: opening
120: medial area
122: outer region
124: Adhesive layer
126: first photomask
128: second photomask
129: Light shading part
130: Light transmitting part
132: Outer periphery
134: medial part
136: exposure area
138: second resist mask
140: Dummy pattern
142: protective film
144: Photocurable resin film
145: peeling film
146: Shield
148: Third resist mask
150: Frame-type storage jig
152: Storage unit
154: Frame type part

Claims (10)

Forming a first resist mask with a first film thickness on the first side of the first support substrate,
Forming a release layer with a second film thickness less than or equal to the first film thickness on the first surface on which the first resist mask is formed,
removing the first resist mask,
A photosensitive resist film is disposed on the release layer to cover the release layer and whose ends extend outside the release layer,
A second support substrate is provided in close contact with the photosensitive resist film,
Separating the first support substrate from the release layer, allowing the photosensitive resist film and the release layer to remain on the second support substrate,
Remove the photosensitive resist film protruding from the release layer,
exposing a cross section of the photosensitive resist film to light,
Forming a deposition mask pattern on the peeling layer.
A method of manufacturing a deposition mask, comprising: According to paragraph 1,
Before providing the second support substrate in close contact with the photosensitive resist film, an area along an end of the release layer of the photosensitive resist film is unexposed, and an area inside the area along the end is exposed. Method for manufacturing a deposition mask. According to paragraph 1,
A method of manufacturing a deposition mask, wherein the photosensitive resist film protruding from the release layer is removed by treatment with a developer. According to paragraph 1,
A method of manufacturing a deposition mask, wherein the first resist mask has a frame-shaped pattern. According to paragraph 4,
forming the release layer on an inner region and an outer region of the first resist mask,
A method of manufacturing a deposition mask, wherein when separating the first support substrate from the release layer, the outer region remains on the side of the first support substrate, and the inner region remains on the side of the second support substrate. According to paragraph 1,
A method of manufacturing a deposition mask, wherein the peeling layer is formed of a metal film. According to paragraph 1,
A method of manufacturing a deposition mask, wherein the peeling layer is formed by a plating method. According to paragraph 1,
A method of manufacturing a deposition mask, wherein the photosensitive resist film is a dry film resist. According to paragraph 1,
A method of manufacturing a deposition mask, wherein, instead of the first resist mask, the release layer is formed by contacting the first support substrate with a frame-shaped member covering a peripheral portion of the first surface. According to paragraph 1,
After forming a deposition mask pattern on the release layer, forming a support frame on the release layer and a connection portion connecting the deposition mask and the support frame, and separating the release layer from the second support substrate. , Method of manufacturing a deposition mask.

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