CN113445002A - Method for manufacturing vapor deposition mask - Google Patents
Method for manufacturing vapor deposition mask Download PDFInfo
- Publication number
- CN113445002A CN113445002A CN202110252771.XA CN202110252771A CN113445002A CN 113445002 A CN113445002 A CN 113445002A CN 202110252771 A CN202110252771 A CN 202110252771A CN 113445002 A CN113445002 A CN 113445002A
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- layer
- manufacturing
- deposition mask
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/20—Separation of the formed objects from the electrodes with no destruction of said electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Abstract
The present invention relates to a method for manufacturing a vapor deposition mask. The object is to provide a method for manufacturing a vapor deposition mask which is not easily affected by a process temperature or an environmental temperature. The method for manufacturing the vapor deposition mask includes: a protective layer is formed on a glass substrate, a plating growth layer is formed on the protective layer, a mask portion is formed on the plating growth layer by electroplating, the glass substrate is dissolved and removed by using a solution, and the protective layer and the plating growth layer are removed. The protective layer may be composed of a material having resistance to the solution. The protective layer may be composed of a resin material.
Description
Technical Field
One embodiment of the present invention relates to a method for manufacturing a vapor deposition mask.
Background
In recent years, an organic EL display device using an organic EL element as a light emitting element is known. The organic EL element has a layer containing an organic EL material (hereinafter referred to as an "organic EL layer") between an anode electrode and a cathode electrode. The organic EL layer includes functional layers such as a light-emitting layer, an electron injection layer, and a hole injection layer. The organic EL element can emit light in colors of various wavelengths by selecting an organic material constituting the functional layer.
A vacuum deposition method is used for forming a thin film of an organic EL element using a low-molecular compound as a material. In the vacuum vapor deposition method, a vapor deposition material is heated by a heater under vacuum to sublimate the vapor deposition material, and the vapor deposition material is deposited (vapor-deposited) on a surface of a substrate to form a thin film. In this case, a mask (vapor deposition mask) having a large number of fine opening patterns is used, whereby a high-definition thin film pattern can be formed simultaneously with vapor deposition.
The evaporation mask is classified into a Fine Metal Mask (FMM) in which an opening pattern is formed using etching and a fine electroforming mask (EFM) in which an opening pattern is formed using an electroforming (electroforming) technique. For example, patent document 1 discloses a method of forming a mask portion having a high-precision opening pattern by an electroforming technique and fixing the formed mask portion to a frame portion by the electroforming technique.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-210633
Disclosure of Invention
Problems to be solved by the invention
In the method for manufacturing a vapor deposition mask described in patent document 1, a mask portion is formed on a support substrate made of stainless steel or brass through a plurality of electroforming steps. In the plurality of electroforming steps, a support substrate made of a metal material is used as a current supply path. However, since stainless steel and brass have a large coefficient of linear expansion, the support substrate may expand and contract due to the process temperature or the ambient temperature. Such expansion and contraction of the support substrate causes a problem of positional deviation of the openings of the vapor deposition mask.
Further, since the support substrate made of stainless steel or brass has higher rigidity than the mask portion formed by the electroforming technique, there is a problem that a large stress is applied to the mask portion when the support substrate is peeled. The stress applied to the mask portion may cause problems such as breakage of the mask portion and detachment from a support frame supporting the mask portion.
An object of one embodiment of the present invention is to provide a method for manufacturing a vapor deposition mask that is less susceptible to process temperature or ambient temperature.
An object of one embodiment of the present invention is to provide a method for manufacturing a vapor deposition mask, which can remove a support substrate without applying stress to a mask portion.
Means for solving the problems
A method for manufacturing a vapor deposition mask according to an embodiment of the present invention includes: forming a protective layer on a glass substrate, forming a plating growth layer on the protective layer, forming a mask portion on the plating growth layer by electroplating, dissolving and removing the glass substrate with a solution, and removing the protective layer and the plating growth layer.
A method for manufacturing a vapor deposition mask according to an embodiment of the present invention includes: a plating growth layer is formed on a glass substrate, a mask portion is formed on the plating growth layer by electroplating, and the glass substrate is dissolved and removed by using a 1 st solution to remove the plating growth layer.
Drawings
Fig. 1 is a plan view showing a structure of a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 2 is a cross-sectional view showing the structure of a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 3 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 4 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 5 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 6 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 7 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 8 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 9 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 10 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 11 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 12 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 13 is a flowchart showing a method for manufacturing a vapor deposition mask according to embodiment 1 of the present invention.
Fig. 14 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 15 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 16 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 17 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 18 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 19 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 20 is a flowchart showing a method for manufacturing a vapor deposition mask according to embodiment 2 of the present invention.
Fig. 21 is a cross-sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 3 of the present invention.
Fig. 22 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 3 of the present invention.
Description of the reference numerals
100. 100a
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings and the like. The present invention can be carried out in various ways without departing from the scope of the gist thereof, and is not limited to the description of the embodiments illustrated below. In the drawings, the width, thickness, shape, and the like of each part are schematically shown as compared with the actual form in order to make the description more clear, but the present invention is not limited to the explanation. In the present specification and the drawings, the same reference numerals are given to elements having the same functions as those described in the previous drawings, and redundant description thereof may be omitted.
In the present specification and claims, a plurality of elements (elements) formed by performing a processing process such as etching on one film may be described as elements having different functions or actions. The plurality of elements are formed of the same layer structure and the same material, and are described as elements located in the same layer.
In the present specification and claims, when a mode is described in which another structure is disposed on a certain structure, unless otherwise specified, the following two cases are included: the case where another structural body is arranged on a certain structural body so as to be in contact with the structural body, and the case where another structural body is arranged above the certain structural body with another structural body interposed therebetween.
In the present specification, unless otherwise specified, expressions such as "α includes (includes) A, B or C", "α includes (includes) either A, B or C", and "α includes (includes) one selected from the group consisting of A, B and C" do not exclude a case where a plurality of combinations of a to C are included in α. Furthermore, these expressions do not exclude the case where α also includes (contains) other elements.
< embodiment 1 >
[ Structure of vapor deposition mask ]
Fig. 1 is a plan view showing a structure of a vapor deposition mask 100 according to embodiment 1 of the present invention. Fig. 2 is a cross-sectional view showing the structure of a vapor deposition mask 100 according to embodiment 1 of the present invention. Specifically, the cross-sectional view shown in fig. 2 shows a cross-section along line a-a' of fig. 1. As shown in fig. 1 and 2, the vapor deposition mask 100 includes a film-like mask portion 110 formed by electroforming (electroforming), a support portion 120 that supports the mask portion 110, and a connection portion 130 that connects the mask portion 110 and the support portion 120.
The mask portion 110 has a plurality of panel regions (panel regions) 115. When the organic EL material is deposited, a deposition substrate (not shown) is disposed so that the display region of the organic EL display device overlaps with each of the panel regions 115. In each panel region 115, a plurality of openings 111 are provided corresponding to the pixel intervals of the organic EL display device. The region of the mask portion 110 excluding the opening 111 is referred to as a non-opening 112. The non-openings 112 are regions surrounding the openings 111. The non-openings 112 correspond to portions of the respective panel regions 115 that block the vapor deposition material.
In the vapor deposition, the vapor deposition mask 100 and the vapor deposition substrate are aligned as follows: a deposition region (region where a thin film is to be formed) in the deposition substrate is made to overlap with the opening 111, and a non-deposition region in the deposition substrate is made to overlap with the non-opening 112. The vapor of the vapor deposition material reaches the substrate to be vapor deposited through the openings 111, and the vapor deposition material is deposited in the vapor deposition region to form a thin film.
The support portion 120 is provided on the outer periphery of the mask portion 110 so as to surround the plurality of panel regions 115 of the mask portion 110 in a plan view. That is, the support portion 120 functions as a frame body that supports the film-like mask portion 110. In fig. 1, the support portion 120 is provided on the outer periphery of the mask portion 110, but the present invention is not limited to this example, and may be provided in a grid shape so as to surround each panel region 115.
The connection portion 130 is a member connecting the mask portion 110 and the support portion 120. In the vapor deposition mask 100 of the present embodiment, the mask portion 110 and the support portion 120 are connected to each other via the connecting portion 130. That is, as shown in fig. 2, the mask portion 110 and the support portion 120 are not directly connected. The mask portion 110 and the support portion 120 may be directly connected to each other, without being limited to this example. In this case, the connection portion 130 is preferably used as a reinforcing member.
In the above configuration, the mask portion 110 is formed of a film-like plating layer. The mask portion 110 of the present embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm or more and 20 μm or less (preferably 5 μm or more and 10 μm or less). In the present embodiment, the thickness of the mask portion 110 is set to 5 μm. The support portion 120 is made of an alloy such as invar (invar). The invar alloy has an advantage that stress is not easily applied to the mask portion 110 because of its small thermal expansion coefficient at normal temperature. The thickness d2 of the support portion 120 is, for example, 0.5mm or more and 1.5mm or less (preferably 0.8mm or more and 1.2mm or less). In the present embodiment, the thickness of the support portion 120 is set to 1.0 mm.
In the present embodiment, invar (invar) is used as the metal material constituting the mask portion 110, the support portion 120, and the connection portion 130. The invar alloy has a smaller thermal expansion coefficient at room temperature and at a temperature in a process of forming an organic EL element than other metal materials such as nickel, and has a thermal expansion coefficient close to that of glass. Therefore, by using invar as a constituent material of the vapor deposition mask 100, the influence of thermal expansion between the mask portion 110 and the glass substrate can be suppressed in the manufacturing process of the vapor deposition mask 100 described later. In addition, there is also an advantage that "offset" caused by thermal expansion between the vapor deposition mask and the substrate to be vapor deposited (usually, a glass substrate) is reduced at the time of vapor deposition, and positional accuracy of vapor deposition is improved. In addition, not limited to this example, if the material has a coefficient close to the thermal expansion coefficient of glass, another material other than invar may be used. The support portion 120 may be made of a metal material different from the mask portion 110 and the connection portion 130.
The vapor deposition mask 100 of the present embodiment described above is formed on a glass substrate in the manufacturing process. The method for manufacturing the vapor deposition mask 100 according to the present embodiment will be described in detail below.
[ method for manufacturing vapor deposition mask 100 ]
A method for manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention will be described with reference to fig. 3 to 13. Fig. 3 to 12 are sectional views showing a method for manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention. Fig. 13 is a flowchart showing a method for manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention.
Fig. 3 is a cross-sectional view showing a step of forming a protective layer 210 in the method of manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention. As shown in fig. 3, the protective layer 210 is formed on substantially the entire surface of the glass substrate 200. The thickness of the glass substrate 200 may be set to a range of 0.3mm to 1.0 mm. In the present embodiment, the thickness of the glass substrate 200 is set to 0.5 mm. The material of the glass substrate 200 is not limited, and as described later, any material that dissolves in a solution may be used. In addition, as for the thickness, a thin thickness is preferable for easy dissolution as long as a strain-free plane can be obtained.
In the present embodiment, the protective layer 210 is made of a resin material. Specifically, the protective layer 210 is made of a resin material selected from polyimide resin, polyethylene resin, acrylic resin, polypropylene resin, epoxy resin, silicone resin, and fluorine resin. As described later, these resin materials are materials having resistance to a solution containing hydrogen fluoride (e.g., hydrofluoric acid). In the present embodiment, a resin layer made of polyimide resin is used as the protective layer 210.
The thickness of the protective layer 210 is preferably selected within a range of 5 μm to 20 μm (preferably 10 μm to 15 μm). In the present embodiment, the thickness of the protective layer 210 is set to 10 μm.
Fig. 4 is a cross-sectional view showing a step of forming a plating growth layer 220 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. The plating growth layer 220 functions as a seed layer for forming a plating layer 240 (see fig. 6) described later. The plating growth layer 220 also functions as an adhesion layer for improving adhesion to the protective layer 210.
In this embodiment, the plating growth layer 220 includes a 1 st metal layer 220a and a 2 nd metal layer 220b in this order from a position close to the protective layer 210. The 1 st metal layer 220a is preferably a metal layer having good adhesion to the protective layer 210. In the present embodiment, since a polyimide resin is used as a material of the protective layer 210, a metal layer containing titanium (Ti) is used as the 1 st metal layer 220a. Note that the present invention is not limited to this example, and other metal layers (for example, molybdenum, tantalum, nickel, or the like) or metal oxide layers (for example, ITO) may be used as long as adhesion to the protective layer 210 can be ensured.
The 2 nd metal layer 220b is a metal layer that can function as a seed layer of the plating layer 240. The 2 nd metal layer 220b preferably has a lower resistance than the 1 st metal layer 220a. In the present embodiment, since invar, which is a nickel alloy, is used as a material of the plating layer 240, a metal layer containing copper (Cu) is used as the 2 nd metal layer 220b. It is to be noted that, in this example, other metal layers may be used as long as they can function as a seed layer.
The thickness of the plating growth layer 220 may be a thickness that can ensure conductivity necessary for growing the plating layer 240. For example, the thickness of the plating growth layer 220 may be set to a range of 50nm to 500 nm. Specifically, the thickness of the 1 st metal layer 220a may be 10nm to 100nm, and the thickness of the 2 nd metal layer 220b may be 100nm to 500 nm. In this embodiment, the thickness of the 1 st metal layer 220a is 50nm, and the thickness of the 2 nd metal layer 220b is 200 nm. That is, the thickness of the plating growth layer 220 is 250 nm. The plating growth layer 220 may be formed by a sputtering method or a CVD (Chemical Vapor Deposition) method.
Fig. 5 is a cross-sectional view showing a step of forming a resist mask 230 in the method of manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention. The resist mask 230 is formed by applying a photosensitive resin material on the metal layer 2 220b, and then performing exposure treatment and development (etching) treatment. The region where the resist mask 230 is formed corresponds to the region of the mask portion 110 shown in fig. 1 and 2 where the plurality of openings 111 are provided. In this embodiment, exposure and etching are performed so that the side wall of the resist mask 230 has a tapered shape. Specifically, as shown in fig. 5, the width of the portion of the resist mask 230 closer to the 2 nd metal layer 220b is narrower.
Fig. 6 is a cross-sectional view showing a step of forming a plating layer 240 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. As shown in fig. 6, a plating layer 240 is formed in a region where the resist mask 230 is not disposed. That is, the region where the plating layer 240 is formed corresponds to the region where the non-opening portion 112 of the mask portion 110 shown in fig. 1 and 2 is provided. In the present embodiment, the surface of the 2 nd metal layer 220b is pretreated with a release agent before the formation of the plating layer 240. As the release agent, for example, Nikka nintac (registered trademark) of japan chemical industry co.
In the present embodiment, the plating layer 240 is a metal layer made of a nickel alloy (specifically, invar). In this embodiment, electroplating is performed using the plating growth layer 220 as a seed layer to form the plating layer 240. The thickness of the plating layer 240 can be adjusted by controlling the time of the plating process. For example, the thickness of the plating layer 240 may be adjusted within a range of 3 μm to 20 μm. In the present embodiment, the thickness of the plating layer 240 is set to 5 μm. The thickness of the plating layer 240 determines the thickness of the mask portion 110 shown in fig. 1 and 2. In the present embodiment, an example in which the plating layer 240 is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.
Fig. 7 is a cross-sectional view showing a step of forming the support portion 120 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. After the plating layer 240 is formed, the resist mask 230 is removed. By removing the resist mask 230, the opening 111 shown in fig. 1 and 2 is formed in the plating layer 240. That is, the plating layer 240 remaining in the state shown in fig. 7 corresponds to the non-opening 112 in fig. 1 and 2. That is, in the state shown in fig. 7, the mask portion 110 having the opening 111 and the non-opening 112 is formed.
After the resist mask 230 is removed, as shown in fig. 7, the support portion 120 is disposed on a part of the plating layer 240 (a part not used as the mask portion 110). The support portion 120 is bonded using an adhesive layer (not shown) provided on a part of the plating layer 240. The adhesive force of the adhesive layer is preferably so strong that the support portion 120 can be temporarily fixed. In the present embodiment, a metal frame made of invar alloy material having a thickness of 1.0mm is used as the support portion 120. The support portion 120 is disposed so as to surround the mask portion 110 as shown in fig. 1.
Fig. 8 is a cross-sectional view showing a step of forming a resist mask 250 in the method of manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention. The resist mask 250 is formed on the mask portion 110 and the support portion 120. The resist mask 250 is formed by applying a photosensitive resin material onto the mask portion 110 and the support portion 120, and then performing an exposure process and a development (etching) process. The region where the resist mask 250 is formed is the region other than the region where the connection portion 130 is provided, which is shown in fig. 1 and 2.
Fig. 9 is a cross-sectional view showing a step of forming the connection portion 130 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. As shown in fig. 9, the connection portion 130 is formed in a region where the resist mask 250 is not arranged. The connection portion 130 is formed using electroplating. Specifically, the connection portion 130 is selectively formed in a region where the resist mask 250 is not disposed, using the support portion 120, the plating layer 240, and the 2 nd metal layer 220b as seed layers. Therefore, as shown in fig. 9, the support portion 120 is also formed on the side wall. After the formation of the connection portion 130 is completed, the resist mask 250 is removed.
In the present embodiment, the connection portion 130 is continuously formed from the sidewall of the support portion 120 onto the plating layer 240. This allows the support portion 120 and the mask portion 110 to be connected via the connection portion 130. The opening 240a of the plating layer 240 provided at the portion overlapping the connection portion 130 has a function of physically dividing the mask portion 110 and the support portion 120 and a function of improving the adhesion between the mask portion 110 and the connection portion 130.
In the present embodiment, the connection portion 130 is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar alloy). In the present embodiment, the thickness of the connection portion 130 is adjusted in a range of 50nm to 200 nm. The thickness of the connection portion 130 varies according to the distance from the support portion 120. In the present embodiment, an example in which the connection portion 130 is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.
Fig. 10 is a cross-sectional view showing a step of removing the glass substrate 200 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. In this embodiment, the glass substrate 200 is removed using a solution containing hydrogen fluoride. Specifically, the glass substrate 200 is dissolved by using a solution containing hydrogen fluoride, and the glass substrate 200 is removed to expose the protective layer 210. As previously described, the protective layer 210 is resistant to a solution containing hydrogen fluoride. Therefore, the protective layer 210 has a function of protecting the mask portion 110, the support portion 120, and the connection portion 130 from the solution. As the solution containing hydrogen fluoride, for example, an acid obtained by mixing hydrofluoric acid with sulfuric acid, nitric acid, hydrochloric acid, or acetic acid can be used.
In this embodiment, chemical etching using a solution containing hydrogen fluoride is performed when removing the glass substrate 200. That is, the glass substrate 200 is immersed in a solution containing hydrogen fluoride to be dissolved. For example, Polishing by CMP (Chemical Mechanical Polishing) may be performed halfway or before, and the glass substrate 200 may be thinned and then be switched to dissolution using a solution. Although not shown in the figure, the glass substrate 200 may be removed by providing a protective member (e.g., a dry film resist: DFR) covering the mask portion 110, the support portion 120, and the connection portion 130 to prevent the solution containing hydrogen fluoride from affecting the mask portion.
Fig. 11 is a cross-sectional view showing a step of removing the protective layer 210 and the plating growth layer 220 in the method of manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. In the present embodiment, the protective layer 210 and the plating growth layer 220 are physically separated from the mask portion 110. For example, after the support unit 120 is fixed, the protective layer 210 and the plating growth layer 220 may be peeled off using a holding member (not shown) adhered or adsorbed to the protective layer 210. As described above, since the surface of the 2 nd metal layer 220b is pretreated with a release agent (not shown), the interface between the 2 nd metal layer 220b and the plating layer 240 is weak in adhesion therebetween. Therefore, the protective layer 210 and the plating growth layer 220 are easily peeled from the mask portion 110.
In the peeling step, since the support portion 120 is fixed, the protective layer 210 and the plating growth layer 220 are on the peeling side. Therefore, when the protective layer 210 and the plating growth layer 220 are peeled off, stress is intensively applied to the protective layer 210 and the plating growth layer 220 side. As described above, according to the present embodiment, the protective layer 210 and the plating growth layer 220 can be peeled off without applying a strong stress to the mask portion 110.
In the present embodiment, when the protective layer 210 and the plating growth layer 220 are peeled off, the plating layer 240 (as shown in fig. 11, the plating layer 240 located below the support portion 120) overlapping the support portion 120 is also peeled off. As described above, the support portion 120 is temporarily fixed to the plating layer 240 by the adhesive layer (not shown). Therefore, if the adhesion between the plating layer 240 and the support portion 120 is lower than the adhesion between the 2 nd metal layer 220b and the plating layer 240, the plating layer 240 is also peeled off together with the support portion 120. Note that, the present invention is not limited to this example, and the plating layer 240 may be left below the support portion 120 without being peeled off.
Fig. 12 is a cross-sectional view showing a state where the protective layer 210 and the plating growth layer 220 are peeled off from the mask section 110 in the method for manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. After the protective layer 210 and the plating growth layer 220 are peeled off, the mask portion 110 is supported by the support portion 120 via the connection portion 130. In fig. 12, it appears that the plating layers 240 constituting the mask portion 110 are separated from each other, but actually, as shown in fig. 1, the mask portion 110 is a metal layer having a plurality of openings 111. The vapor deposition mask 100 is manufactured through the above manufacturing process.
Fig. 13 is a flowchart showing a method for manufacturing the vapor deposition mask 100 according to embodiment 1 of the present invention. As shown in fig. 13, after the method for manufacturing the vapor deposition mask 100 according to the present embodiment is started, a protective layer 210 is formed in step 301. Step 301 corresponds to the process shown in fig. 3. Next, a plating growth layer 220 is formed in step 302. Step 302 corresponds to the process shown in fig. 4.
After the plating growth layer 220 is formed, a plating layer 240 is formed in step 303. Step 303 corresponds to the process shown in fig. 6. Next, the support portion 120 is formed in step 304. Step 304 corresponds to the process shown in fig. 7. After forming the support portion 120, the connection portion 130 is formed in step 305. Step 305 corresponds to the process shown in fig. 9.
At the time point of forming the connection portion 130, the prototype of the vapor deposition mask 100 is completed. Thereafter, in step 306, the glass substrate 200 is removed using a solution containing hydrogen fluoride. Step 306 corresponds to the process shown in fig. 10. Finally, in step 307, the protection layer 210 and the plating growth layer 220 are removed. Step 307 corresponds to the process shown in fig. 11.
As described above, in the present embodiment, the glass substrate 200 is used as a support substrate when the vapor deposition mask 100 is manufactured. The glass substrate 200 has a linear expansion coefficient close to that of the plating layer 240 (in the present embodiment, a metal layer made of invar alloy) constituting the mask portion 110, and thus is not easily affected by the process temperature or the ambient temperature during the manufacturing process. Therefore, the method of manufacturing the vapor deposition mask 100 according to the present embodiment can suppress variation in the positional accuracy of the openings 111 due to expansion and contraction of the support substrate.
In the present embodiment, when the glass substrate 200 is removed, the glass substrate 200 is dissolved using a solution. Therefore, the glass substrate 200 can be removed without applying stress to the mask portion 110. Since the protective layer 210 and the plating growth layer 220 are both thin films, no stress is applied to the mask portion 110 even when these layers are peeled off. Therefore, the method of manufacturing the vapor deposition mask 100 according to the present embodiment can form the mask portion 110 without applying stress.
(modification 1)
In the present embodiment, a solution containing hydrogen fluoride is used for removing the glass substrate 200, but the present invention is not limited to this example. As long as the glass substrate 200 can be dissolved in the solution, a solution containing a substance different from hydrogen fluoride may be used. In this case, it is also desirable to use a material having resistance to a solution used when the glass substrate 200 is removed as the protective layer 210.
(modification 2)
In the present embodiment, a material (specifically, a polyimide resin) that is resistant to a solution containing hydrogen fluoride is used as the protective layer 210, and the protective layer 210 is used as an etching stopper. For example, the protective layer 210 may be made sufficiently thick so that the timing of removing the glass substrate 200 (detection of the emphasis of etching) may be controlled with time. When the thickness of the protective layer 210 is sufficiently large, even if the protective layer 210 is slightly dissolved after the glass substrate 200 is removed, the treatment using the solution can be stopped before the 1 st metal layer 220a is exposed.
< embodiment 2 >
In this embodiment, an example in which the vapor deposition mask 100 is formed by a manufacturing method different from that of embodiment 1 will be described. Specifically, in this embodiment, the vapor deposition mask 100 is formed without using the protective layer 210 of embodiment 1. In this embodiment, the same method for manufacturing the vapor deposition mask 100 as in embodiment 1 is used except that the protective layer 210 is not used, and therefore the same reference numerals are used for the same elements as in embodiment 1, and detailed description thereof is omitted.
A method for manufacturing a vapor deposition mask 100 according to embodiment 2 of the present invention will be described with reference to fig. 14 to 20. Fig. 14 to 19 are sectional views showing a method for manufacturing a vapor deposition mask 100 according to embodiment 2 of the present invention. Fig. 20 is a flowchart showing a method for manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention.
Fig. 14 is a cross-sectional view showing a step of forming a plating growth layer 220 in the method of manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. As in embodiment 1, the plating growth layer 220 functions as a seed layer for forming the plating layer 240. The plating growth layer 220 also functions as an adhesion layer for improving adhesion to the glass substrate 200.
In the present embodiment, the plating growth layer 220 includes a 1 st metal layer 220a and a 2 nd metal layer 220b in this order from a position close to the glass substrate 200. The 1 st metal layer 220a is preferably a metal layer having good adhesion to the glass substrate 200. In this embodiment, a metal layer containing titanium (Ti) is used as the 1 st metal layer 220a. Note that, the present invention is not limited to this example, and other metal layers (for example, molybdenum, tantalum, nickel, or the like) or other metal oxide layers (for example, ITO) may be used as long as adhesion to the glass substrate 200 can be secured. In the present embodiment, since invar, which is a nickel alloy, is used as a material of the plating layer 240, a metal layer containing copper (Cu) is used as the 2 nd metal layer 220b. It is to be noted that, in this example, other metal layers may be used as long as they can function as a seed layer.
Fig. 15 is a cross-sectional view showing a step of forming a plating layer 240 in the method of manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. As in embodiment 1, a resist mask 230 is provided in a region functioning as the opening 111. Thereafter, the plating layer 240 is formed using electroplating. In the present embodiment, a pretreatment using a release agent is performed on the surface of the 2 nd metal layer 220b before the plating layer 240 is formed.
Fig. 16 is a cross-sectional view showing a step of forming the support portion 120 in the method of manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. After the plating layer 240 is formed, the resist mask 230 is removed. Thereafter, the support portion 120 is disposed on a part of the plating layer 240. In the present embodiment, the support portion 120 is bonded using an adhesive layer (not shown) provided on a part of the plating layer 240.
Fig. 17 is a cross-sectional view showing a step of forming a connecting portion 130 in the method of manufacturing a vapor deposition mask 100 according to embodiment 2 of the present invention. As in embodiment 1, a resist mask (not shown) is formed on a part of the mask portion 110 and the support portion 120, and then the connection portion 130 is formed by plating.
According to the process shown in fig. 17, the support portion 120 and the mask portion 110 can be connected via the connection portion 130. In the present embodiment, the connection portion 130 is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar alloy). The connection portion 130 is not limited to this example, and may be formed of another metal material that can be used for plating.
Fig. 18 is a cross-sectional view showing a step of removing the glass substrate 200 and the 1 st metal layer 220a in the method of manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. In this embodiment, the glass substrate 200 and the 1 st metal layer 220a are removed using a solution containing hydrogen fluoride. Specifically, the glass substrate 200 and the 1 st metal layer 220a are dissolved by using a solution containing hydrogen fluoride, thereby exposing the 2 nd metal layer 220b. In the present embodiment, the 2 nd metal layer 220b is a metal layer containing copper, and thus has resistance to a solution containing hydrogen fluoride. Therefore, the 2 nd metal layer 220b has a function of protecting the mask portion 110, the support portion 120, and the connection portion 130 from the solution.
In the present embodiment, chemical etching using a solution containing hydrogen fluoride is performed when removing the glass substrate 200. That is, the glass substrate 200 is immersed in a solution containing hydrogen fluoride to be dissolved. For example, the glass substrate 200 may be thinned by Polishing by CMP (Chemical Mechanical Polishing) and then the solution may be used for dissolving.
Fig. 19 is a cross-sectional view showing a step of removing the 2 nd metal layer 220b in the method of manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. In this embodiment, the metal layer 2 220b is removed using a solution containing hydrogen peroxide. Specifically, the plating layer 240 and a part of the connection portion 130 are exposed by dissolving the 2 nd metal layer 220b using a solution containing hydrogen peroxide. As the solution containing hydrogen peroxide, for example, a mixed solution of hydrogen peroxide and ethylenediaminetetraacetic acid (EDTA) can be used. The mixed solution has the advantage of being able to etch copper without adversely affecting nickel. Note that, without being limited to this example, the 2 nd metal layer 220b may be removed using a copper etching solution (e.g., an alkali solution, an iron chloride solution, a copper chloride solution, or the like).
In the present embodiment, the plating layer 240 and the connection portion 130 are metal layers made of invar alloy containing nickel and iron, and thus have resistance to a solution containing hydrogen peroxide. Since the support portion 120 is also made of invar, the entire vapor deposition mask 100 is resistant to a solution containing hydrogen peroxide. The vapor deposition mask 100 is manufactured through the above manufacturing process.
Fig. 20 is a flowchart showing a method for manufacturing the vapor deposition mask 100 according to embodiment 2 of the present invention. As shown in fig. 20, after the method for manufacturing the vapor deposition mask 100 according to the present embodiment is started, the plating growth layer 220 is formed in step 351. Step 351 corresponds to the process shown in fig. 14. Next, the plating layer 240 is formed in step 352. Step 352 corresponds to the process shown in fig. 15.
After the plating layer 240 is formed, the supporting portion 120 is formed in step 353. Step 353 corresponds to the process shown in fig. 16. After forming the support portion 120, the connection portion 130 is formed in step 354. Step 354 corresponds to the process shown in fig. 17.
At the time point of forming the connection portion 130, the prototype of the vapor deposition mask 100 is completed. Thereafter, in step 355, the glass substrate 200 and the 1 st metal layer 220a are removed using a solution containing hydrogen fluoride. Step 355 corresponds to the process shown in fig. 18. Finally, in step 356, the metal 2 layer 220b is removed using a solution containing hydrogen peroxide. Step 356 corresponds to the process shown in fig. 19.
In the case of the present embodiment, the plating layer 240 may remain below the support portion 120. When the plating layer 240 remains below the support portion 120, the plating layer 240 functions as a reinforcing member that increases the rigidity of the support portion 120. When the vapor deposition mask 100 is provided on a vapor deposition substrate (not shown) during vapor deposition, no space is formed between the support portion 120 and the vapor deposition substrate. Therefore, adhesion between the vapor deposition mask 100 and the vapor deposition substrate can be improved during vapor deposition.
As described above, in the present embodiment, the glass substrate 200 is used as a support substrate when the vapor deposition mask 100 is manufactured. Therefore, the method of manufacturing the vapor deposition mask 100 according to the present embodiment can suppress variation in the positional accuracy of the openings 111 due to expansion and contraction of the support substrate. In the present embodiment, when the glass substrate 200 and the plating growth layer 220 are removed, the glass substrate 200 and the plating growth layer 220 are dissolved using a solution. Therefore, stress is not applied to the mask portion 110. Therefore, the method of manufacturing the vapor deposition mask 100 according to the present embodiment can form the mask portion 110 without applying stress.
(modification 1)
In this embodiment, an example is shown in which the glass substrate 200 and the 1 st metal layer 220a are dissolved using a solution containing hydrogen fluoride, and then the 2 nd metal layer 220b is dissolved using a solution containing hydrogen peroxide. However, as the material of the 1 st metal layer 220a, the glass substrate 200 may be selectively dissolved using a solution containing hydrogen fluoride by using a metal material (for example, an alloy containing copper) having resistance to the solution containing hydrogen fluoride. In this case, the 1 st metal layer 220a and the 2 nd metal layer 220b may be dissolved using another solution (for example, a solution containing hydrogen peroxide).
< embodiment 3 >
In this embodiment, a vapor deposition mask 100A having a structure different from that of embodiment 1 will be described. Fig. 21 is a plan view showing the structure of a vapor deposition mask 100A according to embodiment 3 of the present invention. Fig. 22 is a cross-sectional view showing the structure of a vapor deposition mask 100A according to embodiment 3 of the present invention. The vapor deposition mask 100A of the present embodiment has the same structure as the vapor deposition mask 100 of embodiment 1, except that the arrangement of the support portions 120 and the connection portions 130 is different. Therefore, the same reference numerals are used for the same elements as those in embodiment 1, and detailed description thereof is omitted.
As shown in fig. 21 and 22, the support portion 120 of the vapor deposition mask 100A is provided in a grid pattern above the mask portion 110. That is, the mask portion 110 is supported by the support portion 120 provided in a lattice shape. As in embodiment 1, the mask portion 110 is connected to the support portion 120 via the connection portion 130.
As described above, in the present embodiment, a lattice-shaped metal member is used as the support portion 120 instead of the rectangular metal member. Therefore, compared to embodiment 1, the influence on the mask portion 110 when removing the glass substrate 200 can be further reduced.
As embodiments of the present invention, the above embodiments can be combined and implemented as appropriate as long as they do not contradict each other. A person skilled in the art can add, delete, or modify a design of an appropriate component or add, omit, or modify a condition of a process based on the method for manufacturing a vapor deposition mask according to each embodiment, and the scope of the present invention is included as long as the gist of the present invention is achieved.
As other operational effects different from those of the embodiments described above, it is needless to say that the operational effects which are known from the description of the present specification or which can be easily predicted by those skilled in the art are also regarded as the operational effects of the present invention.
Claims (14)
1. A method for manufacturing a vapor deposition mask, comprising:
forming a protective layer on the glass substrate,
forming a plating growth layer over the protective layer,
forming a mask portion by electroplating over the plating growth layer,
the glass substrate is dissolved and removed using a solution,
and removing the protective layer and the plating growth layer.
2. The method of manufacturing a vapor deposition mask according to claim 1, wherein the protective layer is made of a material resistant to the solution.
3. The method of manufacturing a vapor deposition mask according to claim 2, wherein the protective layer is made of a resin material.
4. The method of manufacturing a vapor deposition mask according to claim 2, wherein the solution is a solution containing hydrogen fluoride.
5. The method of manufacturing a vapor deposition mask according to claim 4, wherein the protective layer is made of a material selected from a polyimide resin, a polyethylene resin, an acrylic resin, a polypropylene resin, an epoxy resin, a silicone resin, a siloxane resin, and a fluororesin.
6. The method of manufacturing a vapor deposition mask according to claim 1, wherein the plating growth layer comprises a 1 st metal layer containing titanium and a 2 nd metal layer containing copper in this order from a position close to the protective layer.
7. The method of manufacturing a vapor deposition mask according to claim 1, wherein the removing the protective layer and the plating growth layer includes peeling the protective layer and the plating growth layer off from a mask portion.
8. A method for manufacturing a vapor deposition mask, comprising:
forming a plating growth layer on the glass substrate,
forming a mask portion by electroplating over the plating growth layer,
the glass substrate was dissolved and removed using the 1 st solution,
removing the plating growth layer.
9. The method of manufacturing an evaporation mask according to claim 8, wherein the removing the plating growth layer includes removing the plating growth layer using a 2 nd solution different from the 1 st solution.
10. The method of manufacturing a vapor deposition mask according to claim 9, wherein the plating growth layer includes a 1 st metal layer and a 2 nd metal layer in this order from a position close to the glass substrate,
dissolving and removing the 1 st metal layer together with the glass substrate using the 1 st solution,
the 2 nd metal layer is dissolved and removed using the 2 nd solution.
11. The method of manufacturing a vapor deposition mask according to claim 10, wherein the 1 st metal layer is a metal layer containing titanium,
the 2 nd metal layer is a metal layer containing copper.
12. The method of manufacturing a vapor deposition mask according to claim 11, wherein the 1 st solution is a solution containing hydrogen fluoride,
the 2 nd solution is a solution containing hydrogen peroxide.
13. The method for manufacturing an evaporation mask according to claim 1 or 8, comprising:
a support portion is disposed above the mask portion,
a connecting portion connecting the support portion and the mask portion is formed by electroforming.
14. The method of manufacturing a vapor deposition mask according to claim 13, wherein the mask portion and the connecting portion are formed of a material containing invar alloy.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-053845 | 2020-03-25 | ||
| JP2020053845A JP2021155763A (en) | 2020-03-25 | 2020-03-25 | Method for manufacturing vapor deposition mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113445002A true CN113445002A (en) | 2021-09-28 |
Family
ID=77809051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110252771.XA Pending CN113445002A (en) | 2020-03-25 | 2021-03-08 | Method for manufacturing vapor deposition mask |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2021155763A (en) |
| KR (1) | KR20210119882A (en) |
| CN (1) | CN113445002A (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217460A (en) * | 1989-02-20 | 1990-08-30 | Seiko Epson Corp | Outer ornament parts for watch |
| JP2006013152A (en) * | 2004-06-25 | 2006-01-12 | Sumitomo Metal Mining Co Ltd | Two-layer flexible board and manufacturing method thereof |
| JP2008130585A (en) * | 2006-11-16 | 2008-06-05 | Sumitomo Metal Mining Co Ltd | Copper-coated polyimide substrate and manufacturing method thereof |
| CN105121692A (en) * | 2013-04-11 | 2015-12-02 | 株式会社V技术 | Film forming mask |
| WO2016052316A1 (en) * | 2014-09-30 | 2016-04-07 | 新日鉄住金化学株式会社 | Polyamic acid, polyamide, resin film, and metal-clad laminate |
| US20160115580A1 (en) * | 2013-07-02 | 2016-04-28 | V Technology Co., Ltd. | Deposition mask and method for producing deposition mask |
| KR20180047594A (en) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | Mask for thin film deposition, manufacturing method thereof, and manufacturing method of organic emitting display device using the same |
| US20190157561A1 (en) * | 2017-11-21 | 2019-05-23 | Japan Display Inc. | Vapor deposition mask and manufacturing method of vapor deposition mask |
| CN110178189A (en) * | 2017-02-27 | 2019-08-27 | 富士胶片株式会社 | The manufacturing method and conductive membrane of conductive membrane |
| CN110241389A (en) * | 2018-03-08 | 2019-09-17 | 日铁化学材料株式会社 | Deposition mask, deposition mask form the manufacturing method formed with polyamic acid, deposition mask with laminated body and deposition mask |
| JP2019157269A (en) * | 2018-03-08 | 2019-09-19 | 日鉄ケミカル＆マテリアル株式会社 | Vapor deposition mask, polyamide for forming vapor deposition mask, laminate for forming vapor deposition mask and method of producing vapor deposition mask |
| CN110819938A (en) * | 2018-08-10 | 2020-02-21 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask device, and vapor deposition method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6722512B2 (en) | 2016-05-23 | 2020-07-15 | マクセルホールディングス株式会社 | Evaporation mask and manufacturing method thereof |
-
2020
- 2020-03-25 JP JP2020053845A patent/JP2021155763A/en active Pending
-
2021
- 2021-03-08 CN CN202110252771.XA patent/CN113445002A/en active Pending
- 2021-03-10 KR KR1020210031207A patent/KR20210119882A/en not_active IP Right Cessation
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217460A (en) * | 1989-02-20 | 1990-08-30 | Seiko Epson Corp | Outer ornament parts for watch |
| JP2006013152A (en) * | 2004-06-25 | 2006-01-12 | Sumitomo Metal Mining Co Ltd | Two-layer flexible board and manufacturing method thereof |
| JP2008130585A (en) * | 2006-11-16 | 2008-06-05 | Sumitomo Metal Mining Co Ltd | Copper-coated polyimide substrate and manufacturing method thereof |
| CN105121692A (en) * | 2013-04-11 | 2015-12-02 | 株式会社V技术 | Film forming mask |
| US20160115580A1 (en) * | 2013-07-02 | 2016-04-28 | V Technology Co., Ltd. | Deposition mask and method for producing deposition mask |
| WO2016052316A1 (en) * | 2014-09-30 | 2016-04-07 | 新日鉄住金化学株式会社 | Polyamic acid, polyamide, resin film, and metal-clad laminate |
| KR20180047594A (en) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | Mask for thin film deposition, manufacturing method thereof, and manufacturing method of organic emitting display device using the same |
| CN110178189A (en) * | 2017-02-27 | 2019-08-27 | 富士胶片株式会社 | The manufacturing method and conductive membrane of conductive membrane |
| US20190157561A1 (en) * | 2017-11-21 | 2019-05-23 | Japan Display Inc. | Vapor deposition mask and manufacturing method of vapor deposition mask |
| CN110241389A (en) * | 2018-03-08 | 2019-09-17 | 日铁化学材料株式会社 | Deposition mask, deposition mask form the manufacturing method formed with polyamic acid, deposition mask with laminated body and deposition mask |
| JP2019157269A (en) * | 2018-03-08 | 2019-09-19 | 日鉄ケミカル＆マテリアル株式会社 | Vapor deposition mask, polyamide for forming vapor deposition mask, laminate for forming vapor deposition mask and method of producing vapor deposition mask |
| CN110819938A (en) * | 2018-08-10 | 2020-02-21 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask device, and vapor deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021155763A (en) | 2021-10-07 |
| KR20210119882A (en) | 2021-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100496577B1 (en) | Mask, method of manufacturing therefor, electroluminescence display apparatus and method of manufacturing therefor | |
| US20060254704A1 (en) | Fabricating method of flexible display | |
| US10023950B2 (en) | Vapor deposition mask and organic el display device | |
| WO2022149350A1 (en) | Device for manufacturing vapor deposition mask and method for manufacturing vapor deposition mask | |
| US20200165714A1 (en) | Vapor deposition mask, vapor deposition mask manufacturing method , and organic semiconductor element manufacturing method | |
| TWI310584B (en) | Mask, method for producing the same, deposition method, electronic device, and electronic apparatus | |
| JP2013257420A (en) | Multi-layer film substrate and method of manufacturing multi-layer film substrate; and method of manufacturing semiconductor, method of manufacturing display device, and method of manufacturing electronic apparatus | |
| US9716135B2 (en) | Organic thin film transistor array substrate and fabrication method thereof | |
| CN112921365B (en) | Method for manufacturing metal mask | |
| CN113445002A (en) | Method for manufacturing vapor deposition mask | |
| KR101722936B1 (en) | Manufacturing method of flexible display device | |
| US9397296B2 (en) | Method of manufacturing organic light emitting display apparatus | |
| KR101252847B1 (en) | Fabricating Method Of Flexible Display | |
| CN111223399A (en) | Manufacturing method of flexible display panel | |
| JP2004273438A (en) | Etching mask | |
| KR20110050122A (en) | The manufacturing method of organic light emitting display | |
| KR102630563B1 (en) | Method for manufacturing of deposition mask | |
| US20220376177A1 (en) | Flexible display panel and fabrication method thereof | |
| CN112017969A (en) | Method for forming wiring on side surface of substrate | |
| CN113493893B (en) | Method for manufacturing evaporation mask | |
| JP4423710B2 (en) | Method for manufacturing light emitting device | |
| US10930546B2 (en) | TFT substrate and method for manufacturing the same | |
| KR20230004257A (en) | Deposition mask | |
| KR20230077651A (en) | Deposition mask and method for manufacturing the same | |
| JP2021143358A (en) | Method for manufacturing vapor deposition mask unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |