KR20230004257A - Deposition mask - Google Patents

Abstract

An objective of the present invention is to provide a deposition mask in which deformation occurring in a mask pattern is suppressed. The deposition mask includes: a mask part having a plurality of openings; a holding and supporting frame holding and supporting the mask part; and a connecting part connecting the mask part and the holding and supporting frame. The connecting part includes a first part in contact with the mask part with a first film thickness, and a second part in contact with the mask part with a second film thickness smaller than the first film thickness. The second part may be located inside the mask part rather than the first part.

Description

Deposition mask {DEPOSITION MASK}

One embodiment of the present invention relates to a deposition mask.

Usually, in the process of manufacturing an organic EL display device, a vacuum evaporation method is used to form a layer composed of an organic EL material (organic EL layer). In the vacuum evaporation method, a deposition mask is brought close to the substrate to be processed, and an organic EL material is deposited on the substrate through the deposition mask. The deposition mask has a plurality of openings. Since the organic EL material passes through a plurality of openings and reaches the processing target substrate, it is possible to selectively form an organic EL layer at positions corresponding to the plurality of openings.

The deposition mask is divided into a fine metal mask (FMM) in which an opening pattern is formed using an etching technique, and an electrofine forming mask (EFM) in which an opening pattern is formed using an electroforming (electroforming) technique. For example, Patent Literature 1 discloses a method of forming a mask portion having a high-precision opening pattern by an electroforming technique and fixing the formed mask portion to a frame body portion by an electroforming technique.

Japanese Unexamined Patent Publication No. 2017-210633

In the prior art, a mask pattern (electrical layer) is formed on a model composed of a metal plate, a frame body is adhered on the mask pattern, and then the frame body and the mask pattern are connected via the metal layer. Thereafter, by peeling the model from the mask pattern, a deposition mask in which the frame body and the mask pattern are connected via a metal layer is completed. However, when peeling the model from the mask pattern, a large vertical stress may occur in the vicinity of the area where the thin film mask pattern and the metal layer are in contact (ie, in the vicinity of the edge of the metal layer), and the vertical stress is the cause. There was a possibility of generating deformation (distortion) in the mask pattern. Deformation generated in the mask pattern may cause dislocation of openings (deposition holes) provided in the mask pattern, thereby reducing deposition accuracy.

An object of one embodiment of the present invention is to provide a deposition mask in which deformation occurring in a mask pattern is suppressed.

An object of one embodiment of the present invention is to suppress the occurrence of deformation of the mask portion due to peeling of the model.

A deposition mask in one embodiment of the present invention includes a mask portion having a plurality of openings, a holding frame holding the mask portion, and a connecting portion connecting the mask portion and the holding frame, the connecting portion includes a first portion in contact with the mask portion with a first film thickness, and a second portion in contact with the mask portion with a second film thickness smaller than the first film thickness.

1 is a plan view showing the configuration of a deposition mask of a first embodiment.
2 is a cross-sectional view showing the configuration of a deposition mask in the first embodiment.
Fig. 3A is a plan view showing an enlarged configuration of a part of the deposition mask of the first embodiment.
Fig. 3B is a cross-sectional view showing the configuration of Fig. 3A taken along line BB'.
4 is a cross-sectional view showing a method of manufacturing a deposition mask according to the first embodiment.
5 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
6 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
7 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
8 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
9 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
10 is a cross-sectional view showing a method of manufacturing a deposition mask according to the first embodiment.
11 is a cross-sectional view showing a method of manufacturing a deposition mask according to the first embodiment.
12 is a cross-sectional view showing a manufacturing method of the deposition mask of the first embodiment.
13 is a cross-sectional view showing a method of manufacturing a deposition mask according to the first embodiment.
14 is a cross-sectional view showing a method for manufacturing a deposition mask in Modification Example 1 of the first embodiment.
15 is a cross-sectional view showing a method of manufacturing a deposition mask in Modification 1 of the first embodiment.
16 is a cross-sectional view showing a manufacturing method of a deposition mask in Modification Example 2 of the first embodiment.
17 is a cross-sectional view showing a method of manufacturing a deposition mask in Modification Example 2 of the first embodiment.
18 is a plan view showing the configuration of a deposition mask according to the second embodiment.
19 is a cross-sectional view showing the configuration of a deposition mask in the second embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings etc. However, this invention can be implemented in various aspects in the range which does not deviate from the summary, and it is limited to the description content of embodiment illustrated below, and is not interpreted. In order to make the explanation clearer, the drawings may be schematically displayed with respect to the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are examples only and do not limit the interpretation of the present invention. In this specification and each drawing, the same reference numerals are assigned to elements having functions similar to those described for the previous drawings, and overlapping explanations may be omitted.

In this specification and claims, in expressing the aspect of arranging another structure on a certain structure, in the case of simply expressing "on", unless otherwise specified, another structure directly above a certain structure so as to be in contact with it It shall include both the case of arranging and the case of arranging another structure above a certain structure and via another structure.

In this specification, “α includes A, B or C”, “α includes any of A, B and C”, “α includes one selected from the group consisting of A, B and C” ” does not exclude the case where α includes a plurality of combinations of A to C, unless otherwise specified. Also, these expressions do not exclude cases where α includes other elements.

<First Embodiment>

[Configuration of deposition mask]

1 is a plan view showing the configuration of a deposition mask 100 in a first embodiment of the present invention. 2 is a cross-sectional view showing the configuration of the deposition mask 100 in the first embodiment of the present invention. Specifically, the cross-sectional view shown in FIG. 2 represents a cross section along the line segment A-A' in FIG. 1 . As shown in FIGS. 1 and 2 , the deposition mask 100 includes a thin film mask portion 110 formed by electroforming (electroforming) and a holding frame 120 holding the mask portion 110. and a connecting portion 130 connecting the mask portion 110 and the holding frame 120 .

The mask portion 110 has a plurality of panel regions 115 . When depositing the organic EL material, a vapor deposition substrate (not shown) is disposed so that the display area of the organic EL display device overlaps each panel area 115 . In each panel region 115, a plurality of openings 111 are provided to match the pixel pitch of the organic EL display device. An area other than the opening 111 of the mask portion 110 is referred to as a non-opening portion 112 . The non-opening portion 112 is a region surrounding each opening 111 . The non-opening portion 112 corresponds to a portion of each panel region 115 for shielding the evaporation material.

During deposition, the deposition mask 100 overlaps the deposition region (region where a thin film is to be formed) and the opening 111 in the deposition target substrate, and overlaps the non-deposition region and the non-aperture 112 in the deposition target substrate. ) and the vapor-deposited substrate are aligned. When vapor of the evaporation material passes through the opening 111 and reaches the substrate to be deposited, the evaporation material is deposited in the evaporation region to form a thin film.

The holding frame 120 is provided on the outer periphery of the mask portion 110 so as to surround the plurality of panel regions 115 of the mask portion 110 in plan view. That is, the holding frame 120 functions as a member holding the mask portion 110 in the form of a thin film. In FIG. 1 , the holding frame 120 is provided only on the outer periphery of the mask portion 110 . However, it is not limited to this example, and the holding frame 120 may be provided in a lattice shape.

The connecting portion 130 is a member that connects the mask portion 110 and the holding frame 120 . In the deposition mask 100 of this embodiment, the mask portion 110 and the holding frame 120 are connected via a connecting portion 130 . That is, as shown in FIG. 2, the mask part 110 and the holding frame 120 are not directly connected. In this embodiment, the connecting portion 130 has at least two or more portions having relatively different film thicknesses at a portion in contact with the mask portion 110 . This point will be described later.

In the above configuration, the mask portion 110 is constituted by a plating layer in the form of a thin film. The mask portion 110 of this embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm or more and 20 μm or less (preferably 5 μm or more and 10 μm or less). In this embodiment, the thickness of the mask portion 110 is 5 μm. The holding frame 120 is made of an alloy such as invar, for example. Since the invar alloy has a small coefficient of thermal expansion at room temperature, it has an advantage that it is difficult to apply stress to the mask portion 110 even if it is placed in an environment where a temperature change occurs through the deposition process. The thickness d2 of the holding frame 120 is, for example, 0.5 mm or more and 1.5 mm or less (preferably 0.8 mm or more and 1.2 mm or less). In this embodiment, the thickness of the holding frame 120 is 1 mm. Further, although not particularly shown in FIG. 2 , the holding frame 120 may be configured with a single layer structure or may be configured with a laminated structure in which thin plate materials are laminated.

In this embodiment, as a metal material constituting the mask portion 110, the holding frame 120, and the connection portion 130, all use invar. Compared to nickel or the like, invar has a smaller thermal expansion coefficient at room temperature and at a temperature during the formation process of an organic EL element, and is close to that of glass. Therefore, by invaring the constituent material of the deposition mask 100, the influence of thermal expansion between the mask portion 110 and the glass substrate can be suppressed in the manufacturing process of the deposition mask 100 described later. Further, during deposition, there is an advantage that the displacement due to thermal expansion between the deposition mask and the deposition target substrate (generally, a glass substrate is used) is reduced and the positional accuracy of deposition is improved. However, it is not limited to this example, and materials other than invar may be used as long as they have a coefficient close to that of glass. Further, the holding frame 120 may be formed of a metal material different from that of the mask portion 110 and the connection portion 130 .

[Configuration of Connection Unit 130]

3A is a plan view showing a partially enlarged configuration of the deposition mask 100 according to the first embodiment. Specifically, FIG. 3A corresponds to an enlarged plan view in which an area surrounded by frame lines 10 in FIG. 1 is enlarged. Fig. 3B is a cross-sectional view showing a configuration obtained by cutting Fig. 3A along line BB'. In FIG. 3A , for convenience of description, only the metal layer 130b described later is hatched.

As shown in FIG. 3A and FIG. 3B, the connection part 130 of this embodiment is comprised by the metal layer 130a and the metal layer 130b. The metal layer 130b is laminated on the metal layer 130a. More specifically, the metal layer 130b is provided so as to cover the metal layer 130a. In this embodiment, since the metal layer 130a and the metal layer 130b are composed of the same metal layer, a structure in which the metal layer 130a and the metal layer 130b are integrated substantially functions as the connection portion 130. However, it is not limited to this example, The metal layer 130a and the metal 130b may be comprised from mutually different metal layers.

As shown in FIG. 3B , the connection portion 130 includes a first portion 131 connected to the mask portion 110 through the metal layer 130a, and a first portion 131 connected to the mask portion 110 through the metal layer 130b. It has a second part (132). Specifically, the first part 131 is composed of a laminated structure of the metal layer 130a and the metal layer 130b, and the second part 132 is composed of a single-layer structure of only the metal layer 130b. In other words, the connection portion 130 includes a first portion 131 in contact with the mask portion 110 with a first film thickness (a total film thickness of the film thickness of the metal layer 130a and the film thickness of the metal layer 130b); A second portion 132 in contact with the mask portion 110 is included with a second film thickness (the film thickness of the metal layer 130b) that is smaller than the first film thickness. On the other hand, as shown in FIG. 3B, the connection part 130 is connected to the side surface of the holding frame 120 by the metal layer 130a. Specifically, the connecting portion 130 is in contact with the side surface of the holding frame 120 with the first film thickness described above.

In the present embodiment, a portion of the connection portion 130 in contact with the mask portion 110 is composed of a plurality of portions having different film thicknesses. Specifically, the first part 131 is located on the side closer to the end of the mask part 110, and the inner side of the mask part 110 (on the side closer to the panel area 115) than the first part 131. A second part 132 is located. In this way, in this embodiment, the end of the connecting portion 130 is gradually thinned toward the inner side of the mask portion 110 . In other words, in the present embodiment, the metal layer 130b having a film thickness smaller than that of the metal layer 130a is provided so as to cover the boundary between the metal layer 130a and the mask portion 110 in plan view.

That is, the physical strength of the deposition mask 100 is the highest in the holding frame 120 and the lowest in the mask portion 110, and the connection portion 130 is in the middle. At this time, the boundary between the holding frame 120 and the connecting portion 130 and the boundary between the connecting portion 130 and the mask portion 110 are very easily damaged because of the large difference in strength between one member and the other, respectively. In particular, the connecting portion 130 ) and the mask portion 110.

As described above, in the present embodiment, by extending the metal layer 130b from the end of the metal layer 130a toward the panel region 115 side in plan view, the film thickness of the connection portion 130 is reduced to that of the mask portion 110. A structure that is gradually thinned toward the inside can be realized. By adopting such a structure, it becomes possible to relax the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the metal layer 130a, and the strain generated in the mask portion 110 can be reduced. In other words, it is possible to suppress deformation of the mask portion 110 caused by peeling of the model at the time of manufacturing the deposition mask 100 .

In the structure of FIG. 3B , the film thickness of the metal layer 130b may be set to 50% or more and 100% or less of the film thickness of the metal layer constituting the mask portion 110 . For example, when the film thickness of the mask part 110 is 5 micrometers, the film thickness of the metal layer 130b may be set to 2.5 micrometers or more and 5 micrometers or less.

In this embodiment, the length X of the second portion 132 is set to 10 μm or more (preferably 20 μm or more, more preferably 30 μm or more). According to the knowledge of the present inventors, as the length of the second portion 132 increases, the normal stress decreases, but when the second portion 132 exceeds 30 μm, no change in normal stress is observed. That is, when the length of the second part 132 is 30 μm or more, the vertical stress can be sufficiently reduced.

[Method of Manufacturing Deposition Mask 100]

A method of manufacturing the deposition mask 100 of the present embodiment will be described in detail with reference to the drawings. 4 to 12 are views showing a manufacturing method of the deposition mask 100 of the first embodiment of the present invention.

First, as shown in FIG. 4 , a seed layer 210 and a resist pattern 220 are formed on the substrate 200 . In this embodiment, a glass substrate is used as the substrate 200 . However, it is not limited to this example, and a metal substrate or a ceramic substrate may be used as the substrate 200 .

The seed layer 210 is a metal layer provided to grow a plating layer. In this embodiment, a metal layer containing copper (Cu) is used as the seed layer 210 in order to use a nickel alloy (specifically, invar) as a material for the plating layer 230a described later. However, it is not limited to this example, and another metal layer may be used as long as it is a metal layer that can function as a seed layer. As described above, when a metal substrate is used as the substrate 200, since the plating layer 230a can be directly grown on the surface of the substrate 200, the seed layer 210 does not need to be provided.

The seed layer 210 may be formed using a sputtering method or a chemical vapor deposition (CVD) method. The thickness of the seed layer 210 may be any thickness capable of ensuring conductivity required for growing the plating layer 230 described later. For example, the thickness of the seed layer 210 may be in the range of 50 nm or more and 500 nm or less.

The resist pattern 220 is formed by applying a photosensitive resin material on the seed layer 210 and then performing exposure treatment and development (etching) treatment. The region where the resist pattern 220 is formed corresponds to the region where the plurality of openings 111 of the mask portion 110 shown in FIGS. 1 and 2 are provided. The resist pattern 220 may be formed using dry film resist (DFR).

Next, as shown in FIG. 5 , a plating layer 230 is formed in an area where the resist pattern 220 is not disposed. That is, the region where the plating layer 230 is formed corresponds to the region where the non-opening 112 of the mask unit 110 shown in FIGS. 1 and 2 is provided. In this embodiment, before formation of the plating layer 230, the surface of the seed layer 210 is pretreated with a release agent. As a release agent, Nippon Chemical Industry Co., Ltd. Nikka Nontag (registered trademark) etc. may be used, for example.

In this embodiment, the plating layer 230 is a metal layer made of a nickel alloy (specifically, invar) as a material. In this embodiment, electroplating is performed by supplying current to the seed layer 210 in an aqueous solution containing nickel alloy metal ions. When the seed layer 210 is energized, the plating layer 230 is formed on the surface of the seed layer 210 . The thickness of the plating layer 230 can be adjusted by controlling the electroplating time. In this embodiment, the thickness of the plating layer 230 is adjusted in the range of 3 μm or more and 20 μm or less (preferably, 5 μm or more and 10 μm or less). Specifically, in this embodiment, the thickness of the plating layer 230 is 5 μm. In this embodiment, although the example in which the plating layer 230 is formed in bar has been shown, it is not limited to this example, and other metal materials may be used as long as they can be used for electroplating. In this way, the technique of producing a shape faithful to the model (resist pattern in this case) using electroplating is called electroformation (electroforming).

After forming the plating layer 230, as shown in FIG. 6, the resist pattern 220 is removed. By removing the resist pattern 220, a mask pattern composed of the plating layer 230 is formed. The mask pattern composed of the plating layer 230 corresponds to the non-opening portion 112 shown in FIGS. 1 and 2 (that is, a shielding portion for shielding the evaporation material). A region formed by removing the resist pattern 220 corresponds to the opening 111 shown in FIGS. 1 and 2 . Therefore, in the state shown in FIG. 6 , a mask pattern finally functioning as the mask portion 110 is formed on the substrate 200 . In FIG. 6 , a region composed of the opening 111 and the non-opening 112 and functioning as a mask pattern corresponds to the panel region 115 .

Subsequently, as shown in FIG. 7 , a resist pattern 240 is formed on the mask portion 110 . The resist pattern 240 is formed by applying a photosensitive resin material on the mask portion 110 and then performing an exposure process and a developing (etching) process. The area where the resist pattern 240 is formed is an area other than the area where the metal layer 130a shown in FIG. 3B is provided and the area where the holding frame 120 is disposed. The resist pattern 240 may be formed using dry film resist (DFR).

Next, as shown in FIG. 8, the holding frame 120 is arrange|positioned on a part of non-opening part 112 (the part not used as mask part 110). The holding frame 120 is adhered onto the non-opening portion 112 using the adhesive force of an adhesive layer (eg, unexposed dry film resist), not shown. As shown in FIG. 1 , the holding frame 120 is disposed so as to surround the mask portion 110 . Further, on the upper surface of the holding frame 120, a resist pattern 242 functioning as a mask is provided in advance. The resist pattern 242 may be formed using dry film resist (DFR).

Subsequently, as shown in FIG. 9, a metal layer 130a is formed in regions where the resist patterns 240 and 242 are not disposed. The metal layer 130a is formed using electroplating. Specifically, the metal layer 130a uses the holding frame 120, the non-opening portion 112, and the seed layer 210 as a seed layer, and is selectively formed in regions where the resist patterns 240 and 242 are not disposed. is formed Therefore, as shown in FIG. 9 , the metal layer 130a is formed from the side surface of the holding frame 120 to the mask portion 110 .

In this embodiment, the metal layer 130a is continuously formed from the side surface of the holding frame 120 to the top of the mask portion 110 . Thus, the holding frame 120 and the mask portion 110 can be connected via the metal layer 130a. The opening 111 provided in the portion of the mask portion 110 overlapping the metal layer 130a serves to physically divide the mask portion 110 and the holding frame 120 and the mask portion 110 and the metal layer 130a. ) has a role in improving the adhesion of

In this embodiment, the metal layer 130a is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar) as a material. In this embodiment, the thickness of the metal layer 130a is adjusted in the range of 50 μm or more and 200 μm or less. In this embodiment, although the example in which the metal layer 130a is formed in bar has been shown, it is not limited to this example, and other metal materials may be used as long as they can be used for electroplating.

After forming the first metal layer 130a, the resist patterns 240 and 242 are removed. After that, as shown in FIG. 10, a resist pattern 244 is newly formed. The resist pattern 244 is formed by applying a photosensitive resin material, followed by exposure treatment and development (etching) treatment. The area where the resist pattern 244 is formed is an area other than the area where the metal layer 130b shown in FIG. 3B is provided. Specifically, it is on a part of the mask part 110 and the holding frame 120. The resist pattern 244 may be formed using dry film resist (DFR).

At this time, as shown in Fig. 10, a space of distance X is left empty between the end of the metal layer 130a and the end of the resist pattern 244. This space is a region for forming the second portion 132 shown in FIG. 3B. The distance X may be 10 μm or more (preferably 20 μm or more, more preferably 30 μm or more).

Subsequently, as shown in FIG. 11, a metal layer 130b is formed in a region where the resist pattern 244 is not disposed. The metal layer 130b is formed using electroplating. Specifically, the metal layer 130b is selectively formed using the metal layer 130a and a part of the non-opening portion 112 (region not covered by the resist 244) as a seed layer. Therefore, as shown in FIG. 11, the metal layer 130b is formed so as to cover the metal layer 130a. Also, an end of the metal layer 130b directly contacts the non-opening 112 . As a result, a portion corresponding to the second portion 132 described with reference to FIG. 3B is formed.

In this embodiment, the metal layer 130b is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar) as a material. In this embodiment, the thickness of the metal layer 130a is adjusted in the range of 2.5 μm or more and 5 μm or less. In this embodiment, although the example of forming the metal layer 130b in bar was shown, it is not limited to this example, You may use another metal material as long as it can be used for electroplating.

After forming the metal layer 130b, as shown in FIG. 12, after removing the resist pattern 244, the substrate 200 is removed. Specifically, after fixing the holding frame 120 by adsorption or the like, the substrate 200 is mechanically separated from the mask portion 110, the holding frame 120, and the connecting portion 130 to remove the substrate 200. Remove. At this time, along with the substrate 200, the seed layer 210 and part of the mask portion 110 (the non-opening portion 112 overlapping the holding frame 120) are removed.

In this embodiment, as shown in the area surrounded by the frame line 20, the metal layer 130b is provided so as to cover the end of the metal layer 130a. Therefore, when the substrate 200 is peeled off, the vertical stress generated in the region surrounded by the frame line 20 can be reduced.

Through the above manufacturing process, the deposition mask 100 having the cross-sectional structure shown in FIG. 13 is completed. As shown in FIG. 13 , the deposition mask 100 of the present embodiment has a structure in which a thin film mask portion 110 is connected to a holding frame 120 via a connecting portion 130 . At this time, the connection part 130 includes a first portion 131 composed of a laminated structure of the metal layer 130a and the metal layer 130b, and a second portion 132 composed of only the metal layer 130b. That is, in the present embodiment, a portion having a film thickness thinner than other portions is provided at an end portion of the connection portion 130 on the side of the mask portion 110 .

In this embodiment, by adopting the structure described above, when peeling the substrate 200, the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the connecting portion 130 can be relieved, and the substrate 200 is peeled off. It is possible to suppress the generation of deformation of the mask portion 110 due to the above. In this way, according to the present embodiment, it is possible to provide a deposition mask in which deformation occurring in the mask pattern is suppressed.

<Modification 1>

In the first embodiment, an example in which the connection portion 130 is formed using the metal layers 130a and 130b having different film thicknesses has been shown, but it is not limited to this example, and the connection portion 130 is formed using a single metal layer. It is also possible to form In this modified example, an example in which the connecting portion 130 is formed using a single plating layer will be described. Regarding the drawings used for explanation, the same reference numerals are used for the same elements as those in the first embodiment, and detailed explanations are omitted.

14 and 15 are cross-sectional views showing the configuration of the deposition mask 100 in Modification Example 1 of the first embodiment of the present invention.

The state shown in FIG. 9 is obtained in the same procedure as in the first embodiment. That is, the connection portion 130 is formed between the mask portion 110 and the holding frame 120 by electroplating. After forming the connection part 130, after removing the resist pattern 240, as shown in FIG. 14, the resist pattern 246 is formed. The resist pattern 246 is formed by applying a photosensitive resin material, followed by exposure treatment and development (etching) treatment. The region where the resist pattern 246 is formed is a region excluding the region corresponding to the second portion 132 shown in FIG. 3B.

After forming the resist pattern 246, using the resist pattern 246 as a mask, an etching process is performed on the end of the connecting portion 130, and the end of the connecting portion 130 (the end on the side close to the mask portion 110) is locally thinned. This process is a so-called half etching process. When the half etching process is finished, the resist pattern 246 is removed and the state shown in FIG. 15 is obtained.

As shown in FIG. 15 , the connecting portion 130c of the present modified example 1 includes a first portion 131 made of a single metal layer (plating layer) and in contact with the mask portion 110 with a first film thickness; A second portion 132 in contact with the mask portion 110 has a second film thickness smaller than one film thickness. In this way, the connection portion 130c of the present modified example 1 has a structure in which the film thickness gradually decreases toward the inner side of the mask portion 110 as in the first embodiment. Therefore, it becomes possible to relieve the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the connecting portion 130c, and the deformation occurring in the mask portion 110 can be reduced.

<Modification 2>

In the first embodiment, after forming the metal layer 130a, the resist pattern 240 is removed and a resist pattern 244 is newly formed. However, it is not limited to this example, and in the process shown in Fig. 10, it is also possible to reuse the resist pattern 240 used for forming the metal layer 130a. In this modified example, an example in which the metal layer 130b is formed using the resist pattern 240 will be described. Regarding the drawings used in the description, the same reference numerals are used for elements that are the same as those in the first embodiment, and detailed explanations are omitted.

16 and 17 are sectional views showing the configuration of the deposition mask 100 in Modification Example 2 of the first embodiment of the present invention.

When the state shown in Fig. 9 is obtained in the same procedure as in the first embodiment, the resist pattern 240 is etched, and the end of the resist pattern 240 is retracted horizontally by the distance X. The amount of retraction by the etching process is the length X corresponding to the second portion 132 shown in FIG. 3B. Such an etching treatment performed on the entire film once formed is called an etch-back treatment. As the etch-back treatment, for example, dry etching treatment in an oxygen atmosphere or the like is used. At this time, the end of the resist pattern 242 provided on the holding frame 120 is similarly retracted, but the performance as a deposition mask is not greatly affected.

Next, a metal layer 130b is formed by electroplating using the retracted resist patterns 240 and 242 . When the metal layer 130b is formed, the resist patterns 240 and 242 are removed to obtain a state shown in FIG. 17 . According to the second modified example, it is not necessary to newly form the resist pattern 244 when forming the metal layer 130b, and the manufacturing process can be simplified.

(Modification 3)

In 1st Embodiment, although the example in which the connection part 130 is formed using two metal layers 130a and 130b was shown, you may form the connection part 130 using three or more metal layers. For example, the metal layer 130a may be composed of two or more metal layers, the metal layer 130b may be composed of a single metal layer, or each of the metal layer 130a and the metal layer 130b may be composed of a plurality of metal layers.

In the case of using three or more metal layers, the film thickness of the connection portion 130 may be changed in three or more stages. For example, after obtaining the state shown in Fig. 11, the resist pattern 244 is removed to form a new resist pattern. At this time, the new resist pattern is disposed such that a portion of the metal layer 130b and the non-opening 112 are exposed. Thereafter, the third electroplating may be performed using the new resist pattern as a mask to form a third metal layer covering the metal layer 130b.

As in this modified example, by using three or more metal layers (plating layers), the film thickness of the connecting portion 130 can be changed in three or more stages, and the end portion of the connecting portion 130 (the end portion on the side of the mask portion 110) It is possible to make the change in film thickness more gentle. As a result, the performance of relieving the normal stress generated when the substrate 200 is peeled off is further improved.

<Second Embodiment>

In this embodiment, a deposition mask 100A having a different configuration from that of the first embodiment will be described. 18 is a plan view showing the configuration of the deposition mask 100A in the second embodiment of the present invention. 19 is a cross-sectional view showing the configuration of a deposition mask 100A in the second embodiment of the present invention. The deposition mask 100A of the present embodiment has a structure similar to that of the deposition mask 100 of the first embodiment except that the arrangement of the holding frame 120 and the connecting portion 130 is different. Therefore, about the same element as 1st Embodiment, the same code|symbol is used and detailed description is abbreviate|omitted.

As shown in FIGS. 18 and 19 , in the deposition mask 100A, the holding frame 120 is provided on the mask portion 110 in a lattice shape. That is, the mask unit 110 is supported by the holding frame 120 provided in a lattice shape. As in the first embodiment, the mask portion 110 is connected to the holding frame 120 via the connecting portion 130 . Further, as shown in FIG. 19 , the connection portion 130 is constructed using the metal layer 130a and the metal layer 130b, and the end portion on the side close to the panel region 115 has a smaller film thickness than the other portions. are losing About the specific structure of the connection part 130, it is the same as that of 1st Embodiment.

As described above, in this embodiment, as the holding frame 120, a rectangular metal member is not used, but a grid-shaped metal member is used. Therefore, the deposition mask 100A of the present embodiment can support the mask portion 110 more stably than the first embodiment.

Each of the above-described embodiments (including each modified example) as an embodiment of the present invention can be appropriately combined and implemented as long as they do not contradict each other. Based on each embodiment, those skilled in the art have appropriately added, deleted, or changed the design of components, or added, omitted, or changed conditions in processes, as long as the gist of the present invention is included. is included in the scope of

In addition, even if it is different from the action and effect brought about by the aspect of each embodiment mentioned above, as for what is clear from the description of this specification, or what can be easily predicted by those skilled in the art, naturally, it is brought about by this invention be interpreted as being

100, 100A: deposition mask,
110: mask unit,
111: opening,
112: non-opening,
115: panel area,
120: holding support frame,
130: connection part,
130a, 130b, 130c: metal layer,
131 first part;
132 second part;
200: substrate,
210: seed layer,
220, 240, 242, 246: resist pattern

Claims (10)

A mask portion having a plurality of openings;
a holding frame for holding the mask portion;
A connecting portion connecting the mask portion and the holding frame
have
The connection portion includes a first portion in contact with the mask portion with a first film thickness, and a second portion in contact with the mask portion with a second film thickness smaller than the first film thickness.
A deposition mask comprising a. The deposition mask according to claim 1, wherein the second portion is located inside the mask portion than the first portion. The deposition mask of claim 1 , wherein a width of the second portion is greater than or equal to 10 μm when viewed in a plan view. The deposition mask according to claim 1, wherein the connecting portion is in contact with the side surface of the holding frame with the first film thickness. The deposition mask according to claim 1, wherein the connecting portion is composed of a first metal layer and a second metal layer laminated on the first metal layer. The method of claim 5, wherein the first part is composed of a laminated structure of the first metal layer and the second metal layer,
The deposition mask, wherein the second portion is composed of the first metal layer. The deposition mask according to claim 5 or 6, wherein the first metal layer and the second metal layer are plating layers. The deposition mask according to claim 5 or 6, wherein the first metal layer and the second metal layer are the same metal layer. The deposition mask according to claim 1 , wherein the mask portion is formed of a plating layer. The deposition mask according to claim 1, wherein the mask portion is connected to the holding frame through the connecting portion.

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