CN115537720A - Vapor deposition mask - Google Patents
Vapor deposition mask Download PDFInfo
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- CN115537720A CN115537720A CN202210697086.2A CN202210697086A CN115537720A CN 115537720 A CN115537720 A CN 115537720A CN 202210697086 A CN202210697086 A CN 202210697086A CN 115537720 A CN115537720 A CN 115537720A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 81
- 239000002184 metal Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 114
- 238000007747 plating Methods 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 142
- 238000000034 method Methods 0.000 description 44
- 239000010408 film Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 229910001374 Invar Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000005323 electroforming Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a vapor deposition mask capable of suppressing deformation generated in a mask pattern, the vapor deposition mask comprises a mask part with a plurality of openings, a holding frame for holding the mask part, and a connecting part for connecting the mask part and the holding frame, wherein the connecting part comprises a 1 st part which is contacted with the mask part in a mode of having a 1 st film thickness and a 2 nd part which is contacted with the mask part in a mode of having a 2 nd film thickness thinner than the 1 st film thickness. The 2 nd portion may be located inside the mask portion than the 1 st portion.
Description
Technical Field
The present invention relates to a vapor deposition mask.
Background
In general, in the process of manufacturing an organic EL display device, a vacuum evaporation method is used for forming a layer (organic EL layer) made of an organic EL material. In the vacuum vapor deposition method, a vapor deposition mask is brought close to a substrate to be processed, and vapor deposition of an organic EL material is performed on the substrate to be processed through the vapor deposition mask. The vapor deposition mask has a plurality of openings. Since the organic EL material reaches the substrate to be processed through the plurality of openings, the organic EL layer can be selectively formed at positions corresponding to the plurality of openings.
The evaporation mask is classified into a Fine Metal Mask (FMM) that forms an opening pattern using an etching technique and an electroforming mask (EFM) that forms an opening pattern using an electroforming technique. For example, patent document 1 discloses a method in which a mask portion having a high-definition opening pattern is formed by an electroforming technique, and the formed mask portion is fixed to a frame portion by the electroforming technique.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-210633.
Disclosure of Invention
Problems to be solved by the invention
In the above-described conventional technique, a mask pattern (electroformed layer) is formed on a mother die made of a metal plate, a frame body is bonded to the mask pattern, and then the frame body and the mask pattern are connected via a metal layer. Then, the master mold is peeled off from the mask pattern, thereby completing an evaporation mask in which the frame body and the mask pattern are connected via a metal layer. However, when the master mold is peeled off from the mask pattern, a large vertical stress may be generated in the vicinity of a region where the film-like mask pattern and the metal layer are in contact (that is, in the vicinity of an edge portion of the metal layer), and the mask pattern may be deformed due to the vertical stress. The deformation of the mask pattern may cause displacement of the openings (vapor deposition holes) provided in the mask pattern, thereby reducing the vapor deposition accuracy.
An object of one embodiment of the present invention is to provide a vapor deposition mask in which distortion generated in a mask pattern is suppressed.
One of the objects of one embodiment of the present invention is to suppress deformation of a mask portion due to peeling of a master mold.
Means for solving the problems
An evaporation mask according to an embodiment of the present invention includes: a mask portion having a plurality of openings; a holding frame for holding the mask portion; and a connecting portion connecting the mask portion and the holding frame, the connecting portion including: a 1 st portion in contact with the mask portion so as to have a 1 st film thickness; and a 2 nd portion in contact with the mask portion so as to have a 2 nd film thickness thinner than the 1 st film thickness.
Drawings
Fig. 1 is a plan view showing the structure of a vapor deposition mask according to embodiment 1.
Fig. 2 is a sectional view showing the structure of the vapor deposition mask according to embodiment 1.
Fig. 3A is a plan view showing a partially enlarged structure of the vapor deposition mask according to embodiment 1.
Fig. 3B is a sectional view showing the structure of fig. 3A cut along line B-B'.
Fig. 4 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 5 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 6 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 7 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 8 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 9 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 10 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 11 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 12 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 13 is a sectional view showing a method for manufacturing a vapor deposition mask according to embodiment 1.
Fig. 14 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of embodiment 1.
Fig. 15 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of embodiment 1.
Fig. 16 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 2 of embodiment 1.
Fig. 17 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 2 of embodiment 1.
Fig. 18 is a plan view showing the structure of the vapor deposition mask according to embodiment 2.
Fig. 19 is a sectional view showing the structure of a vapor deposition mask according to embodiment 2.
Description of reference numerals
100. 100A \8230, a vapor deposition mask 110 \8230, a mask portion 111 \8230, an opening portion 112 \8230, a non-opening portion 115 \8230, a panel region 120 \8230, a holding frame 130 \8230, a connecting portion 130A, 130b and 130c \8230, a metal layer 131 \8230, a portion 1 132 \8230, a portion 2 200 \8230, a substrate 210 \8230, a seed layer 220, 240, 242 and 246 \8230, and a resist pattern.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings and the like. The present invention can be carried out in various ways without departing from the scope of the invention, and should not be construed as being limited to the description of the embodiments illustrated below, and the thickness, shape, and the like are schematically illustrated. In the present specification and the drawings, the same reference numerals are given to elements having the same functions as those described in the conventional drawings, and redundant description is omitted.
In the present specification and the scope of claims, the term "in 8230%, \8230oup" merely means that when another structure is disposed on a certain structure, the other structure is disposed directly above the certain structure so as to be in contact with the certain structure, or the other structure is disposed above the certain structure with another structure interposed therebetween, unless otherwise specifically prohibited.
In the present specification, the expression "a includes a, B or C", "a includes any one of a, B and C", and "a includes one selected from a, B and C" does not exclude a case where a includes a plurality of combinations of a to C unless otherwise specified. Further, these expressions do not exclude the case where α includes other elements.
< embodiment 1>
[ Structure of vapor deposition mask ]
Fig. 1 is a plan view showing a structure of a vapor deposition mask 100 according to embodiment 1 of the present invention. Fig. 2 is a sectional view showing the structure of a vapor deposition mask 100 according to embodiment 1 of the present invention. Specifically, the cross-sectional view shown in fig. 2 representsbase:Sub>A cross-section along linebase:Sub>A-base:Sub>A' of fig. 1. As shown in fig. 1 and 2, the vapor deposition mask 100 includes a film-like mask portion 110 formed by electroforming (electroforming), a holding frame 120 that holds the mask portion 110, and a connecting portion 130 that connects the mask portion 110 and the holding frame 120.
The mask portion 110 has a plurality of panel regions 115. When depositing the organic EL material, a deposition substrate (not shown) is disposed so that the display region of the organic EL display device overlaps with each panel region 115. In each panel region 115, a plurality of openings 111 are provided in accordance with the pixel pitch of the organic EL display device. The region of the mask portion 110 other than the opening 111 is referred to as a non-opening 112. The non-opening 112 is a region surrounding each opening 111. The non-openings 112 correspond to portions for shielding the vapor deposition material in the respective panel regions 115.
In the vapor deposition, the vapor deposition mask 100 and the vapor deposition substrate are aligned so that the vapor deposition region (region where a thin film is to be formed) of the vapor deposition substrate overlaps with the openings 111 and the non-vapor deposition region of the vapor deposition substrate overlaps with the non-openings 112. The vapor of the evaporation material reaches the evaporation target substrate through the opening 111, and the evaporation material is deposited in the evaporation region to form a thin film.
The holding frame 120 is provided on the outer periphery of the mask portion 110 so as to surround the plurality of panel regions 115 of the mask portion 110 in a plan view. That is, the holding frame 120 functions as a member for holding the film-like mask portion 110. In fig. 1, the holding frame 120 is provided only on the outer periphery of the mask portion 110. However, the present invention is not limited to this example, and the holding frame 120 may be provided in a grid shape.
The connecting portion 130 connects the mask portion 110 and the holding frame 120. The vapor deposition mask 100 of the present embodiment connects the mask portion 110 and the holding frame 120 via the connecting portion 130. That is, as shown in fig. 2, the mask part 110 and the holding frame 120 are not directly connected. In the present embodiment, the portion of the connection portion 130 that contacts the mask portion 110 has at least 2 or more portions that are different in film thickness relatively. This point will be explained later.
In the above structure, the mask portion 110 is formed of a plating layer having a thin film shape. The mask portion 110 of the present embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm to 20 μm (preferably 5 μm to 10 μm). In the present embodiment, the thickness of the mask portion 110 is 5 μm. The holding frame 120 is made of an alloy such as invar (invar). Since invar has a small coefficient of thermal expansion at room temperature, it has an advantage that stress is not easily generated in the mask portion 110 even when the invar is left in an environment where temperature changes occur through a vapor deposition process. The thickness d2 of the holding frame 120 is, for example, 0.5mm to 1.5mm (preferably 0.8mm to 1.2 mm). In the present embodiment, the thickness of the holding frame 120 is 1mm. Although not particularly shown in fig. 2, the holding frame 120 may have a single-layer structure or a laminated structure in which thin plate materials are laminated.
In the present embodiment, invar (invar) is used as a metal material constituting the mask portion 110, the holding frame 120, and the connecting portion 130. Invar has a smaller thermal expansion coefficient at normal temperature and at a temperature in a process of forming an organic EL element than nickel or the like, and the thermal expansion coefficient of glass is close to that of nickel. Therefore, by using invar as a structural material of the vapor deposition mask 100, the influence of thermal expansion between the mask portion 110 and the glass substrate can be suppressed in the manufacturing process of the vapor deposition mask 100 described later. In addition, there is an advantage that the positional accuracy of vapor deposition is improved because the deviation caused by thermal expansion between the vapor deposition mask and the substrate to be vapor deposited (normally, of a glass substrate) is small even at the time of vapor deposition. However, the present invention is not limited to this example, and any material other than invar may be used as long as it has a coefficient close to the thermal expansion coefficient of glass. The holding frame 120 may be made of a metal material different from the mask portion 110 and the connection portion 130.
[ Structure of connecting part 130 ]
Fig. 3A is a plan view showing a partially enlarged structure of the vapor deposition mask 100 according to embodiment 1. Specifically, fig. 3A corresponds to an enlarged plan view of an area surrounded by the wire 10 in fig. 1. Fig. 3B is a sectional view showing a structure obtained by cutting the structure of fig. 3A along line B-B'. In fig. 3A, for convenience of explanation, hatching is applied only to the metal layer 130b described later.
As shown in fig. 3A and 3B, the connection portion 130 of the present embodiment is composed of a metal layer 130a and a metal layer 130B. The metal layer 130b is stacked on the metal layer 130a. More specifically, the metal layer 130b is provided so as to cover the metal layer 130a. In the present embodiment, since the metal layer 130a and the metal layer 130b are formed of the same metal layer, a structure in which the metal layer 130a and the metal layer 130b are substantially integrated functions as the connection portion 130. However, the metal layer 130a and the metal layer 130b are not limited to this example, and may be formed of different metal layers.
As shown in fig. 3B, the connection portion 130 includes: a 1 st portion 131 connected to the mask portion 110 through the metal layer 130 a; and a 2 nd portion 132 connected to the mask portion 110 through the metal layer 130b. Specifically, the 1 st portion 131 is formed of a laminated structure of the metal layers 130a and 130b, and the 2 nd portion 132 is formed of a single-layer structure of the metal layer 130b. In other words, the connection portion 130 includes: a 1 st portion 131 in contact with the mask portion 110 so as to have a 1 st film thickness (total film thickness of the metal layer 130a and the film thickness of the metal layer 130 b); and a 2 nd portion 132 in contact with the mask portion 110 so as to have a 2 nd film thickness (film thickness of the metal layer 130 b) thinner than the 1 st film thickness. On the other hand, as shown in fig. 3B, the connection portion 130 is connected to the side surface of the holding frame 120 via a metal layer 130a. Specifically, the connection portion 130 contacts the side surface of the holding frame 120 to have the above-described 1 st film thickness.
In the present embodiment, the connection portion 130 is formed of a plurality of portions having different film thicknesses from each other, the portions being in contact with the mask portion 110. Specifically, the 1 st portion 131 is located on the side close to the end of the mask portion 110, and the 2 nd portion 132 is located on the inner side of the mask portion 110 (the side close to the panel region 115) than the 1 st portion 131. As described above, in the present embodiment, the end portion of the connection portion 130 is gradually thinned toward the inside of the mask portion 110. In other words, in the present embodiment, the metal layer 130b having a thickness smaller than that of the metal layer 130a is provided so as to cover the boundary between the metal layer 130a and the mask portion 110 in a plan view.
That is, the physical strength of the vapor deposition mask 100 is highest at the holding frame 120, lowest at the mask portion 110, and the connecting portion 130 is located in the middle. In this case, the boundary between the holding frame 120 and the connecting portion 130 and the boundary between the connecting portion 130 and the mask portion 110 are very easily broken due to the large difference in strength between the one and the other members, and particularly, the boundary between the connecting portion 130 and the mask portion 110 is conspicuous.
As described above, in the present embodiment, the metal layer 130b is extended from the end of the metal layer 130a toward one side of the panel region 115 in a plan view, whereby the film thickness of the connection portion 130 can be gradually reduced toward the inside of the mask portion 110. With such a configuration, the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the metal layer 130a can be relaxed, and the deformation generated in the mask portion 110 can be reduced. That is, the mask portion 110 can be prevented from being deformed by peeling of the master mold during the production of the vapor deposition mask 100.
In the structure of fig. 3B, the thickness of the metal layer 130B may be set to 50% or more and 100% or less with respect to the thickness of the metal layer constituting the mask portion 110. For example, when the film thickness of the mask portion 110 is 5 μm, the film thickness of the metal layer 130b may be set to 2.5 μm or less and 5 μm or less.
In the present embodiment, the length (X) of the 2 nd portion 132 is set to 10 μm or more (preferably 20 μm or more, and more preferably 30 μm or more). According to the knowledge of the inventors of the present invention, the vertical stress is lower as the length of the 2 nd portion 132 is longer, but when the 2 nd portion 132 exceeds 30 μm, no change in the vertical stress is observed. That is, the vertical stress can be sufficiently reduced by setting the length of the 2 nd portion 132 to 30 μm or more.
[ method for manufacturing vapor deposition mask 100 ]
The method for manufacturing the vapor deposition mask 100 according to the present embodiment will be described in detail with reference to the drawings. Fig. 4 to 12 are diagrams illustrating a method for manufacturing a vapor deposition mask 100 according to embodiment 1 of the present invention.
First, as shown in fig. 4, a seed layer 210 and a resist pattern 220 are formed on a substrate 200. In this embodiment, a glass substrate is used as the substrate 200. However, the substrate 200 is not limited to this example, and a metal substrate or a ceramic substrate may be used.
The seed layer 210 is a metal layer provided for growing a plating layer. In the present embodiment, since a nickel alloy (specifically, invar alloy) is used as a material of the plating layer 230a described later, a metal layer containing copper (Cu) is used as the seed layer 210. However, the present invention is not limited to this example, and other metal layers may be used as long as they can function as a seed layer. As described above, when a metal substrate is used as the substrate 200, the seed layer 210 may not be provided because the plating layer 230a is directly grown on the surface of the substrate 200.
The seed layer 210 may be formed by a sputtering method or a CVD (Chemical Vapor Deposition) method. The thickness of the seed layer 210 may be any thickness that can ensure conductivity necessary for growth of the plating layer 230 described later. For example, the thickness of the seed layer 210 may be in the range of 50nm to 500 nm.
The resist pattern 220 is formed by applying a photosensitive resin material on the seed layer 210, and then performing an exposure process and a development (etching) process. The region where the resist pattern 220 is formed corresponds to the region of the mask portion 110 shown in fig. 1 and 2 where the plurality of openings 111 are provided. The resist pattern 220 may also be formed using a Dry Film Resist (DFR).
Next, as shown in fig. 5, a plating layer 230 is formed in the region where the resist pattern 220 is not disposed. That is, the region where the plating layer 230 is formed corresponds to the region of the mask portion 110 shown in fig. 1 and 2 where the non-opening portion 112 is provided. In this embodiment, the surface of the seed layer 210 is pretreated with a release agent before the plating layer 230 is formed. Examples of the release agent include "124918312459, \\1249412479124 (product name, registered trademark) and the like.
In the present embodiment, the plating layer 230 is a metal layer made of a nickel alloy (specifically, invar alloy). In this embodiment, electroplating is performed by applying current to the seed layer 210 in an aqueous solution containing metal ions of a nickel alloy. When the seed layer 210 is energized, a plating layer 230 is formed on the surface of the seed layer 210. The thickness of the plating layer 230 can be adjusted by controlling the time of plating. In the present embodiment, the thickness of the plating layer 230 is adjusted within a range of 3 μm to 20 μm (preferably 5 μm to 10 μm). Specifically, in the present embodiment, the thickness of the plating layer 230 is 5 μm. In the present embodiment, an example in which the plating layer 230 is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating. A technique of making a shape faithful to the master mold (in this case, a resist pattern) by using electroplating in this way is called electroforming (electroforming).
When the plating layer 230 is formed, the resist pattern 220 is removed as shown in fig. 6. By removing the resist pattern 220, a mask pattern composed of the plating layer 230 is formed. The mask pattern formed by the plating layer 230 corresponds to the non-opening 112 (i.e., a shielding portion that shields the vapor deposition material) shown in fig. 1 and 2. The region formed by removing the resist pattern 220 corresponds to the opening 111 shown in fig. 1 and 2. Therefore, in the state shown in fig. 6, a mask pattern functioning as the mask portion 110 is finally formed on the substrate 200. In fig. 6, a region serving as a mask pattern, which is formed of the opening 111 and the non-opening 112, corresponds to the panel region 115.
Next, as shown in fig. 7, a resist pattern 240 is formed on the mask portion 110. The resist pattern 240 is formed by applying a photosensitive resin material on the mask portion 110, and then performing an exposure process and a development (etching) process. The region where the resist pattern 240 is formed is a region other than the region where the metal layer 130a shown in fig. 3B is provided and the region where the holding frame 120 is arranged. The resist pattern 240 may also be formed using a Dry Film Resist (DFR).
Next, as shown in fig. 8, a holding frame 120 is disposed on a part of the non-opening portion 112 (a part not used as the mask portion 110). The holding frame 120 is bonded to the non-opening 112 by the adhesive force of an adhesive layer (not shown) (e.g., an unexposed dry film resist). As shown in fig. 1, the holding frame 120 is disposed so as to surround the mask portion 110. A resist pattern 242 functioning as a mask is provided in advance on the upper surface of the holding frame 120. The resist pattern 242 may also be formed using a Dry Film Resist (DFR).
Next, as shown in fig. 9, a metal layer 130a is formed in the region where the resist patterns 240 and 242 are not arranged. The metal layer 130a is formed using electroplating. Specifically, the metal layer 130a is selectively formed in the regions where the resist patterns 240 and 242 are not disposed, using the holding frame 120, the non-opening portion 112, and the seed layer 210 as seed layers. Therefore, as shown in fig. 9, the metal layer 130a is formed across the mask portion 110 from the side surface of the holding frame 120.
In the present embodiment, the metal layer 130a is continuously formed from the side surface of the holding frame 120 to the mask portion 110. Thereby, the holding frame 120 and the mask portion 110 can be connected via the metal layer 130a. The opening 111 provided in the mask portion 110 at a portion overlapping the metal layer 130a has a function of physically blocking the mask portion 110 from the holding frame 120, and a function of improving adhesion between the mask portion 110 and the metal layer 130a.
In the present embodiment, the metal layer 130a is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar alloy). In the present embodiment, the thickness of the metal layer 130a is adjusted in a range of 50 μm to 200 μm. In this embodiment, an example in which the metal layer 130a is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.
When the 1 st metal layer 130a is formed, the resist patterns 240 and 242 are removed. After that, as shown in fig. 10, a resist pattern 244 is newly formed. The resist pattern 244 is formed by performing an exposure process and a development (etching) process after applying a photosensitive resin material. The region where the resist pattern 244 is formed is a region other than the region where the metal layer 130B shown in fig. 3B is provided. Specifically, a portion of the mask portion 110 and the holding frame 120. The resist pattern 244 may also be formed using a Dry Film Resist (DFR).
At this time, as shown in fig. 10, a space of a distance X is left between the end of the metal layer 130a and the end of the resist pattern 244. This space is the area for forming the 2 nd portion 132 shown in fig. 3B. The distance X may be 10 μm or more (preferably 20 μm or more, and more preferably 30 μm or more).
Next, as shown in fig. 11, a metal layer 130b is formed in a region where the resist pattern 244 is not disposed. The metal layer 130b is formed using electroplating. Specifically, the metal layer 130b is selectively formed using the metal layer 130a and a part of the non-opening portion 112 (a region not covered with the resist 244) as seed layers. Therefore, as shown in fig. 11, the metal layer 130b is formed so as to cover the metal layer 130a. The end of the metal layer 130b is in direct contact with the non-opening 112. Thereby, a portion corresponding to the 2 nd portion 132 described using fig. 3B is formed.
In the present embodiment, the metal layer 130b is formed of a plating layer (metal layer) made of a nickel alloy (specifically, invar alloy). In the present embodiment, the thickness of the metal layer 130a is adjusted in the range of 2.5 μm to 5 μm. In the present embodiment, an example in which the metal layer 130b is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.
When the metal layer 130b is formed, the resist pattern 244 is removed and then the substrate 200 is removed as shown in fig. 12. Specifically, after the holding frame 120 is fixed by suction or the like, the substrate 200 is mechanically peeled off from the mask portion 110, the holding frame 120, and the connecting portion 130, thereby removing the substrate 200. At this time, the seed layer 210 and a part of the mask portion 110 (the non-opening portion 112 overlapping the holding frame 120) are removed together with the substrate 200.
In the present embodiment, as shown by the region surrounded by the wire 20, the metal layer 130b is provided so as to cover the end of the metal layer 130a. Therefore, the vertical stress generated in the region surrounded by the frame wire 20 can be reduced when peeling off the substrate 200.
Through the above manufacturing steps, the vapor deposition mask 100 having the cross-sectional structure shown in fig. 13 is completed. As shown in fig. 13, a vapor deposition mask 100 according to the present embodiment has a structure in which a film-like mask portion 110 is connected to a holding frame 120 via a connecting portion 130. At this time, the connection portion 130 includes a 1 st portion 131 composed of a laminated structure of the metal layers 130a and 130b and a 2 nd portion 132 composed of only the metal layer 130b. That is, in the present embodiment, a portion having a smaller thickness than other portions is provided at the end portion of the connection portion 130 on the mask portion 110 side.
In the present embodiment, by adopting the above-described configuration, it is possible to alleviate the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the connection portion 130 when peeling the substrate 200, and it is possible to suppress the mask portion 110 from being deformed by the peeling of the substrate 200. As described above, according to the present embodiment, a vapor deposition mask in which deformation of a mask pattern is suppressed can be provided.
< modification 1>
In embodiment 1, an example in which the connection portion 130 is formed using the metal layers 130a and 130b having different film thicknesses from each other is illustrated, but the present invention is not limited to this example, and the connection portion 130 may be formed using a single metal layer. In this modification, an example in which the connection portion 130 is formed using a single plating layer will be described. In the drawings used in the description, the same elements as those in embodiment 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
Fig. 14 and 15 are sectional views showing the structure of a vapor deposition mask 100 according to variation 1 of embodiment 1 of the present invention.
The state shown in fig. 9 is obtained in the same manner as in embodiment 1. That is, the connection portion 130 is formed between the mask portion 110 and the holding frame 120 by plating. When the connection portion 130 is formed, the resist pattern 240 is removed, and then, as shown in fig. 14, a resist pattern 246 is formed. The resist pattern 246 is formed by performing an exposure process and a development (etching) process after applying a photosensitive resin material. The region where the resist pattern 246 is formed is a region other than the region corresponding to the 2 nd part 132 shown in fig. 3B.
After the resist pattern 246 is formed, the end portion of the connection portion 130 is etched using the resist pattern 246 as a mask, and the end portion of the connection portion 130 (the end portion on the side closer to the mask portion 110) is locally thinned. This process is a so-called half-etching process. When the half etching process is completed, the resist pattern 246 is removed, and the state shown in fig. 15 is obtained.
As shown in fig. 15, the connection portion 130c of modification 1 includes a 1 st portion 131 that is in contact with the mask portion 110 so as to have a 1 st film thickness and a 2 nd portion 132 that is in contact with the mask portion 110 so as to have a 2 nd film thickness thinner than the 1 st film thickness, which are formed of a single metal layer (plating layer). As described above, the connecting portion 130c of modification 1 has a structure in which the film thickness gradually decreases toward the inside of the mask portion 110, as in embodiment 1. Therefore, the vertical stress generated in the mask portion 110 in the vicinity of the end portion of the connection portion 130c can be relaxed, and the deformation generated in the mask portion 110 can be reduced.
< modification 2>
In embodiment 1, an example is shown in which after the metal layer 130a is formed, the resist pattern 240 is removed, and the resist pattern 244 is newly formed. However, the present invention is not limited to this example, and the resist pattern 240 used for forming the metal layer 130a may be reused in the process shown in fig. 10. In this modification, an example in which the metal layer 130b is formed using the resist pattern 240 will be described. In the drawings used in the description, the same elements as those in embodiment 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
Fig. 16 and 17 are sectional views showing the structure of a vapor deposition mask 100 according to variation 2 of embodiment 1 of the present invention.
When the state shown in fig. 9 is obtained in the same manner as in embodiment 1, the resist pattern 240 is etched so that the end of the resist pattern 240 is laterally retreated by the distance X. The receding amount obtained by the etching process is a length (X) corresponding to the 2 nd portion 132 shown in fig. 3B. Such an etching process performed on the entire film formed at one time is called an etch-back process. As the etch-back process, for example, a dry etching process in an oxygen atmosphere is used. At this time, the end of the resist pattern 242 provided on the holding frame 120 is similarly retracted, but does not greatly affect the performance as a vapor deposition mask.
Next, using the receded resist patterns 240 and 242, the metal layer 130b is formed by electroplating. When the metal layer 130b is formed, the resist patterns 240 and 242 are removed, resulting in the state shown in fig. 17. According to modification 2, it is not necessary to newly form the resist pattern 244 when forming the metal layer 130b, and the manufacturing process can be simplified.
(modification 3)
In embodiment 1, an example in which the connection portion 130 is formed using 2 metal layers 130a and 130b is illustrated. The connection portion 130 may be formed using 3 or more metal layers. For example, the metal layer 130a may be formed of 2 or more metal layers, and the metal layer 130b may be formed of a single metal layer, or the metal layer 130a and the metal layer 130b may be formed of a plurality of metal layers.
In the case of using 3 or more metal layers, the film thickness of the connection portion 130 may be changed in 3 stages or more. For example, after the state shown in fig. 11 is obtained, the resist pattern 244 is removed to form a new resist pattern. At this time, the new resist pattern is disposed so that the metal layer 130b and a part of the non-opening portion 112 are exposed. Thereafter, the 3 rd electroplating may be performed using the new resist pattern as a mask to form a 3 rd metal layer covering the metal layer 130b.
By using 3 or more metal layers (plating layers) as in this modification, the film thickness of the connection portion 130 can be changed in 3 stages or more, and the change in the film thickness of the end portion (end portion on the mask portion 110 side) of the connection portion 130 can be further reduced. This further improves the performance of relaxing the vertical stress generated when the substrate 200 is peeled off.
< embodiment 2>
In this embodiment, a vapor deposition mask 100A having a structure different from that of embodiment 1 will be described. Fig. 18 is a plan view showing the structure of a vapor deposition mask 100A according to embodiment 2 of the present invention. Fig. 19 is a sectional view showing the structure of a vapor deposition mask 100A according to embodiment 2 of the present invention. The vapor deposition mask 100A of the present embodiment has the same configuration as the vapor deposition mask 100 of embodiment 1, except for the arrangement of the holding frame 120 and the connecting portion 130. Therefore, the same reference numerals are used for the same elements as those in embodiment 1, and detailed description thereof is omitted.
As shown in fig. 18 and 19, the vapor deposition mask 100A has a holding frame 120 provided in a grid pattern on the mask portion 110. That is, the mask portion 110 is supported by the holding frame 120 provided in a grid shape. Similarly to embodiment 1, the mask portion 110 is connected to the holding frame 120 via the connecting portion 130. As shown in fig. 19, the connection portion 130 is formed using the metal layer 130a and the metal layer 130b, and the end portion closer to the panel region 115 has a smaller film thickness than the other portions. The specific configuration of the connection portion 130 is the same as that of embodiment 1.
As described above, in the present embodiment, a metal member in a grid shape is used as the holding frame 120 instead of a rectangular metal member. Therefore, the vapor deposition mask 100A according to the present embodiment can support the mask portion 110 more stably than the vapor deposition mask of embodiment 1.
As an embodiment of the present invention, the above-described embodiments (including the modifications) can be combined and implemented as appropriate as long as they do not contradict each other. Those skilled in the art can add, delete or modify the components of the embodiments as appropriate based on the respective embodiments, or embodiments in which steps are added or omitted or conditions are changed are also included in the scope of the present invention as long as the embodiments conform to the spirit of the present invention.
It is to be noted that, as to other operational effects different from the operational effects obtained by the above-described embodiments, the operational effects that are clear from the description of the present specification or the operational effects that can be easily predicted by the practitioner of the present industry are naturally also interpreted as being obtained by the present invention.
Claims (10)
1. An evaporation mask, comprising:
a mask portion having a plurality of openings;
a holding frame for holding the mask portion; and
a connecting portion connecting the mask portion and the holding frame,
the connecting portion includes: a 1 st portion in contact with the mask portion so as to have a 1 st film thickness; and a 2 nd portion in contact with the mask portion so as to have a 2 nd film thickness thinner than the 1 st film thickness.
2. The vapor deposition mask according to claim 1, wherein:
the 2 nd portion is located inside the mask portion than the 1 st portion.
3. The vapor deposition mask according to claim 1, wherein:
the width of the 2 nd portion is 10 μm or more in a plan view.
4. The vapor deposition mask according to claim 1, wherein:
the connecting portion is in contact with a side surface of the holding frame so as to have the 1 st film thickness.
5. The vapor deposition mask according to claim 1, wherein:
the connection portion is composed of a 1 st metal layer and a 2 nd metal layer laminated on the 1 st metal layer.
6. The vapor deposition mask according to claim 5, wherein:
the 1 st part is composed of a laminated structure of the 1 st metal layer and the 2 nd metal layer,
the 2 nd portion is formed of the 1 st metal layer.
7. The vapor deposition mask according to claim 5 or 6, wherein:
the 1 st metal layer and the 2 nd metal layer are plating layers.
8. The vapor deposition mask according to claim 5 or 6, wherein:
the 1 st metal layer and the 2 nd metal layer are the same metal layer.
9. The vapor deposition mask according to claim 1, wherein:
the mask portion is composed of a plating layer.
10. The vapor deposition mask according to claim 1, wherein:
the mask portion is connected to the holding frame via the connecting portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021109566A JP2023006792A (en) | 2021-06-30 | 2021-06-30 | Vapor deposition mask |
| JP2021-109566 | 2021-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115537720A true CN115537720A (en) | 2022-12-30 |
Family
ID=84723634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210697086.2A Pending CN115537720A (en) | 2021-06-30 | 2022-06-20 | Vapor deposition mask |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2023006792A (en) |
| KR (1) | KR20230004257A (en) |
| CN (1) | CN115537720A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109722627A (en) * | 2017-10-27 | 2019-05-07 | 大日本印刷株式会社 | The manufacturing method of deposition mask and deposition mask |
| CN110268090A (en) * | 2017-02-10 | 2019-09-20 | 株式会社日本显示器 | The manufacturing device of deposition mask, the manufacturing method of deposition mask and deposition mask |
| WO2020158082A1 (en) * | 2019-01-31 | 2020-08-06 | 株式会社ジャパンディスプレイ | Deposition mask and method for manufacturing deposition mask |
| JP2020158826A (en) * | 2019-03-26 | 2020-10-01 | 株式会社ジャパンディスプレイ | Vapor deposition mask |
| JP2021085083A (en) * | 2019-11-29 | 2021-06-03 | 株式会社ジャパンディスプレイ | Vapor deposition mask and manufacturing method of the same |
| CN115210402A (en) * | 2020-03-10 | 2022-10-18 | 株式会社日本显示器 | Method for manufacturing metal evaporation mask unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6722512B2 (en) | 2016-05-23 | 2020-07-15 | マクセルホールディングス株式会社 | Evaporation mask and manufacturing method thereof |
-
2021
- 2021-06-30 JP JP2021109566A patent/JP2023006792A/en active Pending
-
2022
- 2022-06-15 KR KR1020220072705A patent/KR20230004257A/en not_active Application Discontinuation
- 2022-06-20 CN CN202210697086.2A patent/CN115537720A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110268090A (en) * | 2017-02-10 | 2019-09-20 | 株式会社日本显示器 | The manufacturing device of deposition mask, the manufacturing method of deposition mask and deposition mask |
| CN109722627A (en) * | 2017-10-27 | 2019-05-07 | 大日本印刷株式会社 | The manufacturing method of deposition mask and deposition mask |
| WO2020158082A1 (en) * | 2019-01-31 | 2020-08-06 | 株式会社ジャパンディスプレイ | Deposition mask and method for manufacturing deposition mask |
| JP2020158826A (en) * | 2019-03-26 | 2020-10-01 | 株式会社ジャパンディスプレイ | Vapor deposition mask |
| JP2021085083A (en) * | 2019-11-29 | 2021-06-03 | 株式会社ジャパンディスプレイ | Vapor deposition mask and manufacturing method of the same |
| CN115210402A (en) * | 2020-03-10 | 2022-10-18 | 株式会社日本显示器 | Method for manufacturing metal evaporation mask unit |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230004257A (en) | 2023-01-06 |
| JP2023006792A (en) | 2023-01-18 |
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