CN115874144A - Method for manufacturing vapor deposition mask - Google Patents

Abstract

The present invention provides a method for manufacturing a vapor deposition mask excellent in vapor deposition efficiency by a simple method. A method for manufacturing an evaporation mask comprising: using a resist pattern as a mask to form a first plating layer; deforming the resist pattern; and using the deformed resist pattern as a mask , a step of forming a second plating layer on the first plating layer. By deforming the resist pattern, the deformed resist pattern can overlap a part of the first plating layer.

Description

Manufacturing method of evaporation mask

technical field

One embodiment of the present invention relates to a method of manufacturing a vapor deposition mask.

Background technique

Generally, in the process of manufacturing an organic EL display device, a vacuum vapor deposition method is used for forming a layer (organic EL layer) made of an organic EL material. In the vacuum deposition method, a deposition mask is brought close to a substrate to be processed, and an organic EL material is deposited on the substrate to be processed via the deposition mask. The deposition mask has a plurality of openings. Since the organic EL material reaches the substrate to be processed through the plurality of openings, the organic EL layer can be selectively formed at positions corresponding to the plurality of openings.

The vapor deposition material flying from the vapor deposition source flies from various angles with respect to the vapor deposition mask. Therefore, when the vapor deposition material advances obliquely toward the vapor deposition mask, it may not be able to pass through the opening, and the vapor deposition efficiency may decrease. Therefore, in the prior art, a vapor deposition mask has been developed in which the diameter of the opening of the vapor deposition mask is formed into a shape (such as a tapered shape) that expands toward the vapor deposition source, thereby suppressing the occurrence of the above-mentioned phenomenon (such as , Patent Document 1 and Patent Document 2).

prior art literature

patent documents

Patent Document 1: Japanese Unexamined Patent Publication No. 2009-087840.

Patent Document 2: Japanese Patent Laid-Open No. 2016-074938.

Contents of the invention

The technical problem to be solved by the invention

One of the problems of one embodiment of the present invention is to provide a method of manufacturing a vapor deposition mask excellent in vapor deposition efficiency by a simple method.

Technical means used to solve problems

A method for manufacturing an evaporation mask according to an embodiment of the present invention includes: using a resist pattern as a mask to form a first plating layer; deforming the resist pattern; and transforming the deformed The resist pattern is used as a mask, and the second plating layer is formed on the first plating layer.

A method for manufacturing an evaporation mask according to an embodiment of the present invention includes: a step of forming a second resist layer on the first resist layer; etching the second resist layer to form a second resist layer; a step of resist patterning; using the second resist pattern as a mask, etching the first resist layer to form a first resist pattern; and forming the first resist pattern and the step of forming a plating layer with the second resist pattern as a mask, the first resist pattern is etched so that the width of the first resist pattern is larger than that of the second resist pattern when viewed in section The width of the agent pattern is narrowed.

Description of drawings

FIG. 1 is a plan view showing the structure of a vapor deposition mask according to a first embodiment of the present invention.

2 is a cross-sectional view showing the structure of a vapor deposition mask according to the first embodiment of the present invention.

3 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

4 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

5 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

6 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

7 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

8 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

9 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

10 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

11 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

12 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to the first embodiment of the present invention.

13 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the first embodiment of the present invention.

14 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the first embodiment of the present invention.

15 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 2 of the first embodiment of the present invention.

16 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 2 of the first embodiment of the present invention.

17 is a cross-sectional view showing a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

18 is a cross-sectional view showing a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

19 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

20 is a cross-sectional view showing a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

21 is a cross-sectional view showing a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

22 is a cross-sectional view showing a method of manufacturing a vapor deposition mask according to a second embodiment of the present invention.

23 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the second embodiment of the present invention.

24 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the second embodiment of the present invention.

25 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the second embodiment of the present invention.

26 is a cross-sectional view illustrating a method of manufacturing a vapor deposition mask according to Modification 1 of the second embodiment of the present invention.

Explanation of reference signs

21...inclined surface, 100...deposition mask, 110...mask part, 111, 111a, 111b...opening part, 112, 112a, 112b...non-opening part, 115...panel area, 120...holding frame, 130...connection Section, 200...substrate, 210...seed layer, 216...resist layer, 220, 225, 225a, 225b...resist pattern, 230, 230a, 230b...plating layer, 240...resist pattern, 261, 262... Resist layer, 261a, 262a...resist pattern.

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, this invention can be implemented in various aspects in the range which does not deviate from the summary, and is not limited to the description of the embodiment illustrated below, and it is not limitedly interpreted. In order to make the description clearer, the width, thickness, shape, etc. of each part may be schematically shown in comparison with the actual form, but this is only an example and does not limit the interpretation of the present invention. content. In this specification and each drawing, elements having the same functions as those explained in the drawings already presented may be denoted by the same reference numerals and overlapping descriptions may be omitted.

In the scope of this specification and claims, when expressing the way of arranging other structures on a certain structure, when it is only written as "on...", unless otherwise specified, it includes the same There are two cases where another structure is placed directly above one structure in such a manner as to be in contact with each other, and when another structure is placed above a certain structure with another structure interposed therebetween.

In this specification, expressions such as "α includes A, B, or C", "α includes any one of A, B, and C", "α includes one selected from A, B, and C", unless otherwise stated Note that the case where α includes multiple combinations of A to C is not excluded. Moreover, these representations do not exclude the case that α contains other elements.

<First Embodiment>

[Structure of evaporation mask]

FIG. 1 is a plan view showing the structure of a vapor deposition mask 100 according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of vapor deposition mask 100 according to the first embodiment of the present invention. Specifically, the cross-sectional view shown in Fig. 2 represents a cross-section along line segment A-A' in Fig. 1 . As shown in FIGS. 1 and 2 , the evaporation mask 100 has: a film-like mask portion 110 formed by electroforming (electroforming); a holding frame 120 for holding the mask portion 110; The connecting portion 130 of the frame 120 is held. In addition, electroforming refers to a technique of forming a metal layer whose shape is faithful to the shape of the mold (resist pattern in this embodiment) by electroplating.

The mask part 110 has a plurality of panel regions 115 . When vapor-depositing an organic EL material, a substrate to be vapor-deposited (not shown) is arranged such that the display area of the organic EL display device overlaps each panel area 115 . In each panel region 115 , a plurality of openings 111 are provided to match the pixel pitch of the organic EL display device. A region other than the opening 111 of the mask portion 110 is referred to as a non-opening 112 . The non-opening portion 112 is a region surrounding each opening portion 111 . The non-opening portion 112 corresponds to a portion shielding the vapor deposition material in each panel region 115 .

During vapor deposition, vapor deposition is carried out in such a manner that the vapor deposition region (the region where a thin film should be formed) in the vapor deposition substrate overlaps with the opening 111, and the non-evaporation region in the vapor deposition substrate overlaps with the non-opening portion 112. The alignment of the mask 100 and the substrate to be evaporated. The vapor formed by sublimating the vapor deposition material reaches the substrate to be vapor deposited through the opening 111 , whereby the vapor deposition material is deposited in the vapor deposition region to form a thin film.

The holding frame 120 is provided on the outer periphery of the mask part 110 so as to surround the plurality of panel regions 115 of the mask part 110 in plan view. That is, the holding frame 120 functions as a member holding the film-shaped mask portion 110 . In addition, in FIG. 1 , the holding frame 120 is provided only on the outer periphery of the mask portion 110 . However, it is not limited to this example, and the holding frame 120 may be provided in a grid shape.

The connecting portion 130 is a member connecting the mask portion 110 and the holding frame 120 . In vapor deposition mask 100 of this embodiment, mask portion 110 and holding frame 120 are connected via connection portion 130 . That is, as shown in FIG. 2 , the mask portion 110 is not directly connected to the holding frame 120 .

In the above structure, the mask portion 110 is formed of a thin-film plated layer. The mask part 110 of this embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm to 20 μm (preferably 5 μm to 10 μm). In this embodiment, the mask portion 110 is formed to have a thickness of 5 μm. The holding frame 120 is made of, for example, an alloy such as invar. Invar alloy has an advantage that stress is not easily applied to the mask portion 110 because of its small coefficient of thermal expansion at room temperature. The thickness d2 of the holding frame 120 is, for example, not less than 0.5 mm and not more than 3.0 mm (preferably not less than 0.8 mm and not more than 2.0 mm). In this embodiment, the thickness of the holding frame 120 is 1 mm.

In this embodiment, as the metal material constituting the mask portion 110 , the holding frame 120 , and the connection portion 130 , invar alloy (invar) is used. Invar alloys have a smaller thermal expansion coefficient at room temperature and at temperatures in the organic EL element forming process than nickel and the like, and are close to the thermal expansion coefficient of glass. Therefore, by using Invar as a constituent material of the deposition mask 100 , the influence of thermal expansion between the mask portion 110 and the glass substrate can be suppressed in a manufacturing process of the deposition mask 100 described later. In addition, at the time of vapor deposition, there is an advantage that the thermal expansion between the vapor deposition mask and the substrate to be vapor deposited (usually a glass substrate) is less offset, thereby improving the positional accuracy of vapor deposition. However, it is not limited to this example, and materials other than invar may be used as long as they have a coefficient of thermal expansion close to that of glass. In addition, the holding frame 120 may be made of a different metal material from the mask portion 110 and the connection portion 130 .

[Manufacturing method of vapor deposition mask 100 ]

A method of manufacturing vapor deposition mask 100 according to this embodiment will be described in detail with reference to the drawings. 3 to 12 are diagrams showing a method of manufacturing vapor deposition mask 100 according to the first embodiment of the present invention.

First, as shown in FIG. 3 , a seed layer 210 and a resist pattern 220 are formed on a substrate 200 . In this embodiment, a glass substrate is used as the substrate 200 . However, it is not limited to this example, and a metal substrate or a ceramic substrate may be used as the substrate 200 .

The seed layer 210 is a metal layer provided to grow a plating layer. In the present embodiment, a nickel alloy (specifically, Invar alloy) is used as a material of the plating layer 230 a described later, and therefore a metal layer containing copper (Cu) is used as the seed layer 210 . However, it is not limited to this example, and other metal layers may be used as long as they can function as a seed layer.

The seed layer 210 can be formed by a sputtering method or a CVD (Chemical Vapor Deposition: Chemical Vapor Deposition) method. The thickness of the seed layer 210 should just be a thickness which can ensure the electroconductivity necessary for growing the plating layer 230 mentioned later. For example, the thickness of the seed layer 210 may be formed in a range of not less than 50 nm and not more than 500 nm.

The resist pattern 220 is formed by applying a photosensitive resin material on the seed layer 210 and then performing an exposure treatment and a development (etching) treatment. The area where the resist pattern 220 is formed corresponds to the area where the plurality of openings 111 are provided in the mask portion 110 shown in FIGS. 1 and 2 .

Next, as shown in FIG. 4, a plating layer 230a is formed in a region where the resist pattern 220 is not disposed. That is, the region where the plated layer 230a is formed corresponds to the region where the non-opening portion 112 is provided in the mask portion 110 shown in FIGS. 1 and 2 . In this embodiment, the surface of the seed layer 210 is pretreated with a release agent before the formation of the plating layer 230a. As a release agent, for example, "Nicka Nanotack" (registered trademark, trade name) of Nippon Chemical Industry Co., Ltd., etc. can be used.

In this embodiment, the plating layer 230a is a metal layer made of nickel alloy (specifically, Invar alloy). In this embodiment, electroplating is performed by applying electricity to the seed layer 210 in an aqueous solution containing metal ions of a nickel alloy. When the seed layer 210 is energized, the plating layer 230 a is formed on the surface of the seed layer 210 . The thickness of the plating layer 230a can be adjusted by controlling the plating time. In this embodiment, the thickness of the plated layer 230a is adjusted to be in the range of 0.5 μm or more and 5 μm or less. Specifically, in this embodiment, the thickness of the plating layer 230a is formed to be 2 μm. In this embodiment, an example in which the plated layer 230 a is formed of Invar alloy was shown, but it is not limited to this example, and other metal materials may be used as long as they are materials that can be used for electroplating.

After the plating layer 230a is formed, the resist pattern 220 is deformed to form a resist pattern 225 . Specifically, as shown in FIG. 5 , the cross-sectional shape of the resist pattern 220 is changed so that a part of the resist pattern 220 overlaps a part of the plating layer 230 a. Therefore, the distance between adjacent resist patterns 225 shown in FIG. 5 becomes shorter than the distance between adjacent resist patterns 220 shown in FIG. 4 . In addition, in the present embodiment, an example is shown in which the upper portion of the resist pattern 225 (the portion located above the plating layer 230 a ) becomes a forward tapered shape by deformation. However, the shape of the upper portion of the resist pattern 225 is not limited to this example, but varies depending on the conditions of the process when deforming the resist pattern 220 and the material constituting the resist pattern 220 .

As a method of deforming the resist pattern 220, for example, heating the resist pattern 220 (for example, heat treatment at about 200 degrees) to expand it, or using a specific solution (such as an organic solution such as a developer) Alkaline solution) or a gas (such as a reactive gas such as organosilane) contacts the resist pattern 220 to make it swell. When the resist pattern 225 is formed, an appropriate resist material can be used according to swelling by heating or contact with a solution or the like.

The above mainly shows an example of functioning to increase the volume of the resist pattern 220, and the deformation of the resist pattern 220 required in the present invention refers to a resist pattern formed to protrude upward from the plating layer 230a. A part of 220 covers the shape of the plating layer 230a. For example, this can be realized by only deforming the cross-sectional shape without increasing the cross-sectional area of the resist pattern 220 or deforming only the outer shape without changing the volume of the resist pattern 220 . Therefore, it is not necessary to necessarily limit the deformation of the cross-sectional shape of the resist pattern 220 to a method relying only on expansion or swelling.

Next, as shown in FIG. 6 , electroplating is performed using the deformed resist pattern 225 as a mask, and a plated layer 230 b is formed in a region where the resist pattern 225 is not disposed. The plating layer 230b is formed between the plurality of resist patterns 225 . In this embodiment, the plating layer 230a and the plating layer 230b are formed of the same nickel alloy (specifically, Invar alloy), but they are not limited to this example, and may be formed of different metal layers. In this embodiment, the thickness of the plating layer 230b is adjusted within a range of not less than 2 μm and not more than 15 μm. Specifically, in this embodiment, the thickness of the plating layer 230b is set to 3 μm. In this embodiment, an example in which the plating layer 230b is formed of Invar alloy was shown, but it is not limited to this example, and other metal materials may be used as long as they can be used for electroplating.

As shown in FIG. 6, the interval between the first plating layers 230a formed at the position sandwiching the deformed resist pattern 225 (that is, the interval between adjacent first plating layers 230a) is smaller than that formed at the position sandwiching the deformed resist pattern 225. The interval between the second plating layers 230b at the position of the etchant pattern 225 (that is, the interval between adjacent second plating layers 230b) is small. In other words, the width of the portion of the deformed resist pattern 225 sandwiched by the first plating layers 230a is smaller than the width of the portion sandwiched by the second plating layers 230b.

After the plating layer 230b is formed, the resist pattern 225 is removed as shown in FIG. 7 . By removing the resist pattern 225, a pattern composed of the plating layer 230a and the plating layer 230b is formed. The pattern constituted by the plating layer 230a and the plating layer 230b corresponds to the non-opening portion 112 shown in FIGS. 1 and 2 (that is, the shielding portion shielding the vapor deposition material). A region formed by removing the resist pattern 225 corresponds to the opening portion 111 shown in FIGS. 1 and 2 . That is, in the present embodiment, the total film thickness of the plating layer 230 a and the plating layer 230 b determines the film thickness of the mask portion 110 .

As shown in FIG. 7 , the width of the upper surface of the plating layer 230 b is narrower than the width of the upper surface of the plating layer 230 a in cross section. Here, let X be the difference between the width of the upper surface of the plating layer 230a and the width of the upper surface of the plating layer 230b. Thereby, the diameter of the upper end of the opening 111 is wider than the diameter of the lower end of the opening 111 , and it is possible to reduce the phenomenon that the vapor deposition material inclined toward the vapor deposition mask cannot pass through the opening. The length of the above-mentioned difference X can be controlled by the amount of deformation of the resist pattern 220 shown in FIG. 5 .

Next, as shown in FIG. 8 , the holding frame 120 is arranged on a part of the non-opening portion 112 (a portion not used as the mask portion 110 ). The holding frame 120 is bonded to the non-opening portion 112 by the adhesive force of an adhesive layer (not shown). The holding frame 120 is arranged to surround the mask portion 110 as shown in FIG. 1 .

Next, as shown in FIG. 9 , a resist pattern 240 is formed over the mask portion 110 and the holding frame 120 . The resist pattern 240 is formed by applying a photosensitive resin material on the mask portion 110 and the holding frame 120 , and then performing exposure processing and development (etching) processing. The region where the resist pattern 240 is formed is a region other than the region where the connecting portion 130 shown in FIGS. 1 and 2 is provided.

Next, as shown in FIG. 10 , the connecting portion 130 is formed in a region where the resist pattern 240 is not arranged. The connection part 130 is formed by electroplating. Specifically, the connection portion 130 is selectively formed in a region where the resist pattern 240 is not arranged using the holding frame 120 , the non-opening portion 112 , and the seed layer 210 as a seed layer. Therefore, as shown in FIG. 10 , the connection portion 130 is formed across the mask portion 110 from the side wall of the holding frame 120 .

In the present embodiment, the connecting portion 130 is formed continuously from the side wall of the holding frame 120 to above the mask portion 110 . Thereby, the holding frame 120 and the mask part 110 can be connected via the connection part 130 . The opening provided in the portion overlapping the connecting portion 130 in the mask portion 110 has the function of physically separating the mask portion 110 from the holding frame 120 and improving the adhesion between the mask portion 110 and the connecting portion 130. effect.

In the present embodiment, the connecting portion 130 is formed of a plating layer (metal layer) made of a nickel alloy (specifically, Invar alloy). In the present embodiment, the thickness of the connection portion 130 is adjusted to be in the range of 50 nm to 200 nm. In this embodiment, an example in which the connecting portion 130 is formed of Invar alloy is shown, but it is not limited to this example, and other metal materials may be used as long as it is a material that can be used for electroplating.

After the connection portion 130 is formed, the resist pattern 240 is removed as shown in FIG. 11 , and then the substrate 200 is removed. Specifically, after holding frame 120 is fixed by suction or the like, substrate 200 is mechanically peeled off from mask portion 110 , holding frame 120 , and connection portion 130 , thereby removing substrate 200 . At this time, the seed layer 210 and part of the mask portion 110 (the non-opening portion 112 overlapping the holding frame 120 ) are removed together with the substrate 200 .

Through the above manufacturing process, vapor deposition mask 100 having the cross-sectional structure shown in FIG. 12 is completed. As shown in FIG. 12 , vapor deposition mask 100 according to this embodiment has a structure in which film-shaped mask portion 110 is connected to holding frame 120 via connection portion 130 . In this case, the width of the upper end (the distance between the plating layers 230b ) of the opening 111 in cross-section is wider than the width of the lower end (the distance between the plating layers 230a ). Therefore, it is possible to reduce the phenomenon that the vapor deposition material that advances obliquely toward the vapor deposition mask 100 cannot pass through the opening 111 . In addition, in this embodiment, the diameter of the vapor deposition source side of the opening 111 of the vapor deposition mask 100 can be enlarged by simply deforming the resist pattern used for plating without performing pattern formation. Thus, according to this embodiment, the vapor deposition mask 100 excellent in vapor deposition efficiency can be realized with a simple method.

(Modification 1)

In this modified example, an example in which the resist pattern 220 is deformed into a shape different from that in FIG. 5 will be described. 13 and 14 are cross-sectional views illustrating a method of manufacturing vapor deposition mask 100 according to Modification 1 of the first embodiment of the present invention.

The state shown in FIG. 4 is obtained in the same flow as that of the first embodiment, and as shown in FIG. 13 , a resist pattern 225a in which the resist pattern 220 is deformed is formed. In this modified example, an example is shown in which the upper part of the resist pattern 225a (the part above the plating layer 230a) is substantially circular. The difference from FIG. 5 is that the resist pattern 225a is not in contact with the upper surface of the plating layer 230a, and the resist pattern 225a overlaps the plating layer 230a when this shape is planarly viewed. The shape of the upper portion of the resist pattern 225 a can be realized by appropriately adjusting the conditions of the treatment for deforming the resist pattern 220 and the material constituting the resist pattern 220 .

After the resist pattern 225a is formed, the plating layer 230b is formed by electroplating again. After the plating layer 230b is formed, the resist pattern 225a is removed. Thereby, as shown in FIG. 14, the opening part 111a and the non-opening part 112a are formed.

FIG. 14 shows an enlarged view of the end of the non-opening portion 112a (the region surrounded by the frame line 10). As shown in this enlarged view, the side surfaces of the plating layer 230b are curved so as to form a concave portion. In addition, from the inclination of the straight line 11 connecting the edge of the upper surface and the edge of the lower surface of the plating layer 230b, it is clear that the width (diameter) increases upward (direction toward the evaporation source during evaporation). Therefore, in this modified example, it is possible to reduce the phenomenon that the vapor deposition material that advances obliquely toward the vapor deposition mask 100 cannot pass through the opening 111 a.

In addition, as shown by the frame line 12 in the above-mentioned enlarged view, in this modified example, the edge of the lower surface of the plating layer 230b substantially coincides with the edge of the upper surface of the plating layer 230a. That is, in this modified example, when the resist pattern 220 is deformed, the resist pattern 220 spreads in the lateral direction without contacting the surface of the plating layer 230a.

(Modification 2)

In this modified example, an example in which the resist pattern 220 is deformed into a shape different from that in FIGS. 5 and 13 will be described. 15 and 16 are cross-sectional views illustrating a method of manufacturing vapor deposition mask 100 in Modification 2 of the first embodiment of the present invention.

After the state shown in FIG. 4 is obtained in the same flow as in the first embodiment, a resist pattern 225b in which the resist pattern 220 is deformed is formed as shown in FIG. 15 . In this modified example, an example is shown in which the upper part of the resist pattern 225b (the part above the plating layer 230a) has a substantially elliptical shape. The cross-sectional shape is substantially the same as that of FIG. 13 described above, but the difference in the example shown in FIG. 15 is that a part of the resist pattern 225a is in contact with the upper surface of the plating layer 230a. The shape of the upper portion of the resist pattern 225 b can be realized by appropriately adjusting the conditions of the treatment for deforming the resist pattern 220 and the material constituting the resist pattern 220 .

After the resist pattern 225b is formed, the plating layer 230b is formed again using electroplating. After the plating layer 230b is formed, the resist pattern 225a is removed. Thereby, the opening 111b and the non-opening 112b are formed as shown in FIG. 16 .

FIG. 16 shows an enlarged view of the end portion (region surrounded by the frame line 15 ) of the non-opening portion 112 b. As shown in this enlarged view, the side surfaces of the plating layer 230b are curved so as to form a concave portion. In addition, as can be seen from the inclination of the straight line 16 connecting the edge of the upper surface and the edge of the lower surface of the plating layer 230b, the width (diameter) increases upward (towards the deposition source during deposition). Therefore, in this modified example, it is possible to reduce the phenomenon that the vapor deposition material that advances obliquely toward the vapor deposition mask 100 cannot pass through the opening 111b.

In addition, as indicated by the frame line 17 in the above-mentioned enlarged view, in this modification, unlike the above-mentioned modification 1, there is a distance between the edge of the lower surface of the plating layer 230b and the edge of the upper surface of the plating layer 230a. That is, in the example shown in FIG. 16, a part of the upper surface of the plating layer 230a is exposed. In this modified example, when the resist pattern 220 deforms and spreads laterally, the portion of the resist pattern 220 protruding above the plated layer 230a contacts the surface of the plated layer 230a to form the exposed surface as described above.

<Second Embodiment>

In this embodiment, an example in which the vapor deposition mask 100 is produced by a method different from that of the first embodiment will be described. In addition, in the manufacturing method of the vapor deposition mask 100 of this embodiment, the same code|symbol is used about the same element as 1st Embodiment, and detailed description is abbreviate|omitted.

A method of manufacturing vapor deposition mask 100 according to this embodiment will be described in detail with reference to the drawings. 17 to 26 are diagrams showing a method of manufacturing vapor deposition mask 100 according to the first embodiment of the present invention.

First, as shown in FIG. 17 , a seed layer 210 , a resist layer 261 and a resist layer 262 are formed over a substrate 200 . In this embodiment, a non-photosensitive resin material is used as the resist layer 261 , and a photosensitive resin material is used as the resist layer 262 . However, it is not limited to this example, and a photosensitive resin material may be used as the resist layer 216 . In this embodiment, as the resist layer 261 , a material having a higher etching rate with respect to a developer than the resist layer 262 is used.

As shown in FIG. 17 , the film thickness of the resist layer 261 is smaller than the film thickness of the resist layer 262 . The film thickness of the resist layer 262 is preferably twice or more (ideally not less than three times and not more than five times) the film thickness of the resist layer 261 . As will be described later, the shape of the opening 111 constituting the mask portion 110 can be set by the ratio of the film thicknesses of the resist layer 261 and the resist layer 262 .

After the resist layer 261 and the resist layer 262 are formed, as shown in FIG. 18 , a resist pattern 262 a is formed by subjecting the resist layer 262 to exposure processing and development (etching) processing. The region where the resist pattern 262a is formed corresponds to the region where a plurality of openings 111 are provided in the mask portion 110 described using FIGS. 1 and 2 .

After forming the resist pattern 262a, as shown in FIG. 19, the resist layer 261 is developed (etched) using the resist pattern 262a as a mask, thereby forming a resist pattern 261a. The region where the resist pattern 261a is formed corresponds to the region where the plurality of openings 111 are provided in the mask portion 110 described using FIGS. 1 and 2 .

As shown in FIG. 19, the resist pattern 261a is etched so that the width of the resist pattern 261a is narrower than the width of the resist pattern 262a in cross-section. In this embodiment, as described above, a material having a higher etching rate with respect to a developer than the resist layer 262 is used as the resist layer 261 . Therefore, by receding the side surface of the resist pattern 261a by overetching, the resist pattern 262a can be formed in a protruding state with respect to the resist pattern 261a. At this time, the retreat amount of the resist pattern 261a can be controlled by the timing of the etching process.

Next, as shown in FIG. 20, a plating layer 230 is formed in a region where the resist pattern 261a and the resist pattern 262a are not arranged. That is, the region where the plated layer 230 is formed corresponds to the region where the non-opening portion 112 is provided in the mask portion 110 described with reference to FIGS. 1 and 2 in the first embodiment. In this embodiment, the plating layer 230 is a metal layer made of Invar alloy.

In this embodiment, the plating layer 230 is grown at least to a position where the upper surface is located between the resist patterns 262a. That is, the film thickness of the plating layer 230 is at least made larger than the film thickness of the resist pattern 261a. In the present embodiment, the thickness of the plating layer 230 is adjusted to be in the range of 3 μm or more and 20 μm or less. Specifically, in this embodiment, the thickness of the plating layer 230 is set to 5 μm.

After the plating layer 230 is formed, as shown in FIG. 21, the resist pattern 261a and the resist pattern 262a are removed. By removing the resist pattern 261a and the resist pattern 262a, a pattern composed of the plating layer 230 is formed. The pattern constituted by the plating layer 230 corresponds to the non-opening portion 112 (that is, the shielding portion shielding the vapor deposition material) shown in FIGS. 1 and 2 . The region formed by removing the resist pattern 261 a and the resist pattern 262 a corresponds to the opening 111 described with reference to FIGS. 1 and 2 . That is, in the present embodiment, the film thickness of the plating layer 230 determines the film thickness of the mask portion 110 .

As shown in FIG. 21 , the width of the upper surface of the non-opening portion 112 is narrower than the width of the lower surface of the non-opening portion 112 in cross-section. Here, X is defined as the difference between the width of the upper surface of the non-opening portion 112 and the width of the lower surface of the non-opening portion 112 . Thereby, the diameter of the upper end of the opening 111 is wider than the diameter of the lower end of the opening 111 , and it is possible to reduce the phenomenon that the vapor deposition material obliquely advancing toward the vapor deposition mask cannot pass through the opening. The length of the above-mentioned difference X can be controlled by the retreat amount of the resist pattern 261 a shown in FIG. 19 .

As described above, after the openings 111 and non-openings 112 constituting the mask portion 110 are formed, the vapor deposition mask 100 shown in FIG. 22 is completed through the same process as in FIGS. 8 to 11 of the first embodiment. . As shown in FIG. 22 , vapor deposition mask 100 according to this embodiment has a structure in which film-shaped mask portion 110 is connected to holding frame 120 via connection portion 130 . At this time, the width of the upper end (the distance between the upper surfaces of the non-opening portions 112 ) is wider than the width of the lower end (the distance between the lower surfaces of the non-opening portions 112 ) of the opening 111 in plan view. Therefore, it is possible to reduce the phenomenon that the vapor deposition material that advances obliquely toward the vapor deposition mask 100 cannot pass through the opening 111 . Thus, according to this embodiment, the vapor deposition mask 100 excellent in vapor deposition efficiency can be realized.

(Modification 1)

In this modified example, an example in which the resist pattern 262 a is formed in a shape different from that in FIG. 18 will be described. 23 to 26 are cross-sectional views illustrating a method of manufacturing vapor deposition mask 100 according to Modification 1 of the second embodiment of the present invention.

After obtaining the state shown in FIG. 17 in the same manner as in the second embodiment, as shown in FIG. 23 , exposure processing and development (etching) processing are performed on the resist layer 262 to form an inverted tapered resist pattern 262a. That is, in this modified example, the width of the resist pattern 262 a in a planar view increases upward (direction away from the resist layer 261 ).

In this embodiment, a photosensitive resin material is used as the resist layer 262 constituting the resist pattern 262a. The photosensitive resin material has an advantage that an inverted tapered shape can be easily formed by adjusting exposure conditions and the like. However, it is not limited to this example, and the resist pattern 262a may have a forward tapered shape. In the case where the resist layer 262 is formed of a photosensitive resin material, the tapered shape can be controlled by adjusting exposure conditions and the like, so both the reverse tapered shape and the forward tapered shape can be controlled. In addition, the area where the resist pattern 262a is formed corresponds to the area where the plurality of openings 111 are provided in the mask section 110 described with reference to FIGS. 1 and 2 .

After forming the resist pattern 262a, as shown in FIG. 24, the resist layer 261 is developed (etched) using the resist pattern 262a as a mask, thereby forming a resist pattern 261a. In this modified example, the resist pattern 261a is etched such that the width of the resist pattern 261a is narrower than the width of the resist pattern 262a in plan view.

Next, as shown in FIG. 25 , a plating layer 230 is formed in a region where the resist pattern 261 a and the resist pattern 262 a are not arranged. After the plating layer 230 is formed, as shown in FIG. 26, the resist pattern 261a and the resist pattern 262a are removed. By removing the resist pattern 261a and the resist pattern 262a, a pattern composed of the plating layer 230 is formed.

The pattern formed by the plated layer 230 corresponds to the non-opening portion 112 (that is, the shielding portion shielding the vapor deposition material) shown in FIGS. 1 and 2 . The region formed by removing the resist pattern 261 a and the resist pattern 262 a corresponds to the opening 111 described with reference to FIGS. 1 and 2 .

As shown in FIG. 26 , the non-opening portion 112 has a forward tapered shape in plan view. That is, as shown in the enlarged view corresponding to the portion surrounded by the frame line 20 , on the upper portion of the non-opening portion 112 , the inclined surface 21 is formed such that the film thickness of the non-opening portion 112 becomes thicker as the distance from the opening portion 111 increases. . Therefore, the diameter of the upper end of the opening 111 in this modified example can be enlarged compared to the diameter of the upper end of the opening 111 shown in FIG. 21 . Accordingly, it is possible to reduce the phenomenon that the vapor deposition material that advances obliquely toward the vapor deposition mask cannot pass through the opening.

As an embodiment of the present invention, as long as the above-mentioned embodiments do not contradict each other, they can be implemented in combination with each other as appropriate. Based on the manufacturing method of the vapor deposition mask of each embodiment, those skilled in the art may appropriately add, delete, or change the design of components, or add, omit, or change the conditions of the process, as long as they have The gist of the present invention is also included in the scope of the present invention.

In addition, even other effects that are different from the effects brought about by the forms of the above-mentioned embodiments, such as effects that are obvious from the description of this specification or effects that are easily conceivable by those skilled in the art, it should be understood that, of course, The effect that the present invention obtains.

Claims (11)

1. A method for manufacturing a vapor deposition mask, comprising:

a step of forming a first plating layer using the resist pattern as a mask;

a step of deforming the resist pattern; and

and forming a second plating layer on the first plating layer using the deformed resist pattern as a mask.

2. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern causes the deformed resist pattern to overlap a part of the first plating layer.

3. The method for manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern includes a step of immersing the resist pattern in an organic base solvent.

4. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern includes a step of heating the resist pattern.

5. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the interval of the first plating layer formed at the position sandwiching the resist pattern after the deformation is smaller than the interval of the second plating layer formed at the position sandwiching the resist pattern after the deformation.

6. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

further comprising the step of forming said resist pattern over the metal layer,

the first plating layer and the second plating layer are formed by electroplating.

7. The method for manufacturing a vapor deposition mask according to claim 1, wherein:

further comprising the step of removing the deformed resist pattern after forming the second plating layer.

8. A method for manufacturing a vapor deposition mask, comprising:

a step of forming a second resist layer over the first resist layer;

a step of etching the second resist layer to form a second resist pattern;

a step of forming a first resist pattern by etching the first resist layer using the second resist pattern as a mask; and

a step of forming a plating layer using the first resist pattern and the second resist pattern as a mask,

the first resist pattern is etched such that a width of the first resist pattern becomes narrower than a width of the second resist pattern in a cross section.

9. The method for manufacturing a vapor deposition mask according to claim 8, wherein:

the first resist layer has an etching rate greater than that of the second resist layer.

10. The method of manufacturing a vapor deposition mask according to claim 8, wherein:

the first resist layer and the second resist layer are formed over a metal layer,

the plating layer is formed by electroplating.

11. The method of manufacturing a vapor deposition mask according to claim 8, wherein:

the step of etching the second resist layer to form a second resist pattern includes a step of forming the second resist pattern into a reverse tapered shape.

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