CN115874144A - Method for manufacturing vapor deposition mask - Google Patents

Abstract

The invention provides a method for manufacturing a vapor deposition mask with excellent vapor deposition efficiency by a simple method. The method for manufacturing the vapor deposition mask includes: a step of forming a first plating layer using the resist pattern as a mask; a step of deforming the resist pattern; and a step of forming a second plating layer on the first plating layer using the deformed resist pattern as a mask. By deforming the resist pattern, the deformed resist pattern can be overlapped with a part of the first plating layer.

Description

Method for manufacturing vapor deposition mask

Technical Field

One embodiment of the present invention relates to a method for manufacturing a vapor deposition mask.

Background

In general, in the process of manufacturing an organic EL display device, a vacuum deposition method is used for forming a layer (organic EL layer) made of an organic EL material. In the vacuum vapor deposition method, a vapor deposition mask is brought close to a substrate to be processed, and vapor deposition of an organic EL material is performed on the substrate via the vapor deposition mask. The vapor deposition mask has a plurality of openings. Since the organic EL material reaches the substrate to be processed through the plurality of openings, the organic EL layer can be selectively formed at positions corresponding to the plurality of openings.

The vapor deposition material that has flown from the vapor deposition source flies from various angles with respect to the vapor deposition mask. Therefore, when the vapor deposition material moves obliquely toward the vapor deposition mask, a phenomenon occurs in which the vapor deposition material cannot pass through the openings, and the vapor deposition efficiency may be reduced. Therefore, conventionally, a vapor deposition mask has been developed in which the diameter of an opening of the vapor deposition mask is formed in a shape (for example, a tapered shape) expanding toward a vapor deposition source, thereby suppressing the occurrence of the above phenomenon (for example, patent documents 1 and 2).

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2009-087840.

Patent document 2: japanese patent laid-open publication No. 2016-074938.

Disclosure of Invention

Technical problem to be solved by the invention

One problem of one embodiment of the present invention is to provide a method for manufacturing a vapor deposition mask having excellent vapor deposition efficiency by a simple method.

Means for solving the problems

The method for manufacturing a vapor deposition mask according to an embodiment of the present invention includes: a step of forming a first plating layer using the resist pattern as a mask; a step of deforming the resist pattern; and a step of forming a second plating layer on the first plating layer using the deformed resist pattern as a mask.

A method for manufacturing a vapor deposition mask according to an embodiment of the present invention includes: a step of forming a second resist layer over the first resist layer; a step of etching the second resist layer to form a second resist pattern; a step of forming a first resist pattern by etching the first resist layer using the second resist pattern as a mask; and a step of forming a plating layer using the first resist pattern and the second resist pattern as a mask, the first resist pattern being etched such that a width of the first resist pattern becomes narrower than a width of the second resist pattern in a cross section.

Drawings

Fig. 1 is a plan view showing a structure of a vapor deposition mask according to a first embodiment of the present invention.

Fig. 2 is a sectional view showing the structure of a vapor deposition mask according to a first embodiment of the present invention.

Fig. 3 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 4 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 5 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 6 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 7 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 8 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 9 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 10 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 11 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 12 is a sectional view showing a method for manufacturing a vapor deposition mask according to a first embodiment of the present invention.

Fig. 13 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the first embodiment of the present invention.

Fig. 14 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the first embodiment of the present invention.

Fig. 15 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 2 of the first embodiment of the present invention.

Fig. 16 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 2 of the first embodiment of the present invention.

Fig. 17 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 18 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 19 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 20 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 21 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 22 is a sectional view showing a method for manufacturing a vapor deposition mask according to a second embodiment of the present invention.

Fig. 23 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the second embodiment of the present invention.

Fig. 24 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the second embodiment of the present invention.

Fig. 25 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the second embodiment of the present invention.

Fig. 26 is a sectional view showing a method for manufacturing a vapor deposition mask according to modification 1 of the second embodiment of the present invention.

Description of reference numerals

21 … inclined plane, 100 … vapor deposition mask, 110 … mask section, 111a, 111b … open section, 112a, 112b … non-open section, 115 … panel region, 120 … holding frame, 130 … connecting section, 200 … substrate, 210 … seed layer, 216 … resist layer, 220, 225a, 225b … resist pattern, 230a, 230b … plating layer, 240 … resist pattern, 261, 262, … resist pattern, 261a, 262a … resist pattern.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be carried out in various ways without departing from the scope of the present invention, and is not limited to the description of the embodiments illustrated below. In the drawings, the width, thickness, shape, and the like of each part are schematically shown as compared with the actual form in order to make the description more clear, but this is merely an example and does not limit the explanation of the present invention. In the present specification and the drawings, elements having the same functions as those described with respect to the already-shown drawings may be denoted by the same reference numerals, and redundant description thereof may be omitted.

In the present specification and the scope of claims, when a mode is expressed in which another structure is disposed on a certain structure, the case where only "… …" is referred to includes both a case where another structure is disposed directly above the certain structure so as to be in contact with the certain structure and a case where another structure is disposed above the certain structure with another structure interposed therebetween, unless otherwise specified.

In the present specification, the expressions "α includes A, B or C", "α includes either A, B and C", and "α includes one selected from A, B and C" do not exclude a case where α includes a plurality of combinations of a to C unless otherwise specified. These expressions do not exclude the case where α includes other elements.

< first embodiment >

[ Structure of vapor deposition mask ]

Fig. 1 is a plan view showing a structure of a vapor deposition mask 100 according to a first embodiment of the present invention. Fig. 2 is a sectional view showing the structure of a vapor deposition mask 100 according to a first embodiment of the present invention. Specifically, the cross-sectional view shown in fig. 2 representsbase:Sub>A cross-section along linebase:Sub>A-base:Sub>A' of fig. 1. As shown in fig. 1 and 2, the vapor deposition mask 100 includes: a film-like mask portion 110 formed by electroforming (electroforming); a holding frame 120 holding the mask portion 110; and a connection portion 130 connecting the mask portion 110 and the holding frame 120. The electroforming is a technique of forming a metal layer having a shape that is faithful to the shape of the mold (resist pattern in the present embodiment) by electroplating.

The mask portion 110 has a plurality of panel regions 115. When the organic EL material is deposited, a deposition substrate (not shown) is disposed so that the display region of the organic EL display device overlaps each panel region 115. In each panel region 115, a plurality of openings 111 are provided in accordance with the pixel pitch of the organic EL display device. The region of the mask portion 110 other than the opening 111 is referred to as a non-opening 112. The non-openings 112 are regions surrounding the openings 111. The non-opening 112 corresponds to a portion for shielding the evaporation material in each panel region 115.

At the time of vapor deposition, the vapor deposition mask 100 and the vapor deposition substrate are aligned so that a vapor deposition region (a region where a thin film is to be formed) in the vapor deposition substrate overlaps with the openings 111 and a non-vapor deposition region in the vapor deposition substrate overlaps with the non-openings 112. Vapor formed by sublimation of the vapor deposition material reaches the substrate to be vapor deposited through the openings 111, and the vapor deposition material is deposited in the vapor deposition region to form a thin film.

The holding frame 120 is provided on the outer periphery of the mask portion 110 so as to surround the plurality of panel regions 115 of the mask portion 110 in a plan view. That is, the holding frame 120 functions as a member for holding the film-like mask portion 110. In fig. 1, the holding frame 120 is provided only on the outer periphery of the mask portion 110. However, the holding frame 120 is not limited to this example, and may be provided in a grid shape.

The connecting portion 130 connects the mask portion 110 and the holding frame 120. In the vapor deposition mask 100 of the present embodiment, the mask portion 110 and the holding frame 120 are connected via the connecting portion 130. That is, as shown in fig. 2, the mask portion 110 and the holding frame 120 are not directly connected.

In the above structure, the mask portion 110 is formed of a film-like plating layer. The mask portion 110 of the present embodiment is a thin film formed by electroplating. The thickness d1 of the mask portion 110 is, for example, 3 μm or more and 20 μm or less (preferably 5 μm or more and 10 μm or less). In the present embodiment, the mask portion 110 is formed to have a thickness of 5 μm. The holding frame 120 is made of an alloy such as invar (invar). The invar alloy has an advantage that stress is not easily applied to the mask portion 110 because of its small thermal expansion coefficient at normal temperature. The thickness d2 of the holding frame 120 is, for example, 0.5mm or more and 3.0mm or less (preferably 0.8mm or more and 2.0mm or less). In the present embodiment, the thickness of the holding frame 120 is formed to be 1mm.

In the present embodiment, invar (invar) is used as a metal material constituting the mask portion 110, the holding frame 120, and the connecting portion 130. Invar has a smaller thermal expansion coefficient at room temperature and at a temperature in the organic EL element forming step than nickel or the like, and is close to the thermal expansion coefficient of glass. Therefore, by using invar as a constituent material of the vapor deposition mask 100, the influence of thermal expansion between the mask portion 110 and the glass substrate can be suppressed in the manufacturing process of the vapor deposition mask 100 to be described later. Further, in the vapor deposition, there is an advantage that the displacement between the vapor deposition mask and the substrate to be vapor deposited (usually, a glass substrate) due to thermal expansion is small, and the positional accuracy of the vapor deposition is improved. However, the present invention is not limited to this example, and any material other than invar may be used as long as it has a coefficient close to the thermal expansion coefficient of glass. The holding frame 120 may be made of a metal material different from the mask portion 110 and the connecting portion 130.

[ method for manufacturing vapor deposition mask 100 ]

A method for manufacturing the vapor deposition mask 100 according to the present embodiment will be described in detail with reference to the drawings. Fig. 3 to 12 are diagrams illustrating a method for manufacturing a vapor deposition mask 100 according to a first embodiment of the present invention.

First, as shown in fig. 3, a seed layer 210 and a resist pattern 220 are formed on a substrate 200. In this embodiment, a glass substrate is used as the substrate 200. However, the present invention is not limited to this example, and a metal substrate or a ceramic substrate may be used as the substrate 200.

The seed layer 210 is a metal layer provided for growing a plating layer. In the present embodiment, since a nickel alloy (specifically, invar alloy) is used as a material of the plating layer 230a described later, a metal layer containing copper (Cu) is used as the seed layer 210. However, the present invention is not limited to this example, and other metal layers may be used as long as they can function as a seed layer.

The seed layer 210 may be formed using a sputtering method or a CVD (Chemical Vapor Deposition) method. The thickness of the seed layer 210 may be any thickness that can ensure conductivity necessary for growing the plating layer 230 described later. For example, the seed layer 210 may be formed to have a thickness in the range of 50nm to 500 nm.

The resist pattern 220 is formed by applying a photosensitive resin material on the seed layer 210, and then performing an exposure process and a development (etching) process. The region where the resist pattern 220 is formed corresponds to the region of the mask portion 110 shown in fig. 1 and 2 where the plurality of openings 111 are provided.

Next, as shown in fig. 4, a plating layer 230a is formed in a region where the resist pattern 220 is not disposed. That is, the region where the plating layer 230a is formed corresponds to the region of the mask portion 110 shown in fig. 1 and 2 where the non-opening portion 112 is provided. In this embodiment, the surface of the seed layer 210 is pretreated with a release agent before the formation of the plating layer 230a. Examples of the release agent include ニッカノンタック (registered trademark and trade name) from japan chemical industry co.

In the present embodiment, the plating layer 230a is a metal layer made of a nickel alloy (specifically, invar alloy). In this embodiment, electroplating is performed by applying current to the seed layer 210 in an aqueous solution containing metal ions of a nickel alloy. When the seed layer 210 is energized, a plating layer 230a is formed on the surface of the seed layer 210. The thickness of the plating layer 230a can be adjusted by controlling the time of plating. In the present embodiment, the thickness of the plated layer 230a is adjusted to be in the range of 0.5 μm or more and 5 μm or less. Specifically, in the present embodiment, the thickness of the plating layer 230a is formed to be 2 μm. In the present embodiment, an example in which the plating layer 230a is formed of invar alloy is shown, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.

After the plating layer 230a is formed, the resist pattern 220 is deformed to form a resist pattern 225. Specifically, as shown in fig. 5, the cross-sectional shape of the resist pattern 220 is changed so that a part of the resist pattern 220 overlaps a part of the plating layer 230a. Therefore, the distance between the adjacent resist patterns 225 shown in fig. 5 becomes shorter as compared with the distance between the adjacent resist patterns 220 shown in fig. 4. In this embodiment, an example is shown in which the upper portion of the resist pattern 225 (the portion located above the plating layer 230 a) is deformed into a forward tapered shape. However, the shape of the upper portion of the resist pattern 225 is not limited to this example, but varies depending on the conditions of the process when deforming the resist pattern 220 and the material constituting the resist pattern 220.

As a method of deforming the resist pattern 220, for example, a method of expanding the resist pattern 220 by applying heat treatment (for example, heat treatment of about 200 degrees) to the resist pattern 220, or a method of swelling the resist pattern 220 by contacting a specific solution (for example, an organic alkali solution such as a developer) or gas (for example, a reactive gas such as organic silane) with the resist pattern 220 can be used. In forming the resist pattern 225, an appropriate resist material may be used depending on expansion by heating or swelling by contact with a solution or the like.

The above description mainly shows an example in which the resist pattern 220 functions to increase the volume thereof, and the deformation of the resist pattern 220 required in the present invention means a shape in which a part of the resist pattern 220 formed to protrude upward from the plating layer 230a covers the plating layer 230a. For example, the cross-sectional shape of the resist pattern 220 may be deformed without increasing the cross-sectional area itself, or the outer shape of the resist pattern 220 may be deformed without changing the volume thereof. Therefore, it is not necessary to limit the deformation of the cross-sectional shape of the resist pattern 220 to a method that relies only on swelling or swelling.

Next, as shown in fig. 6, electroplating is performed using the deformed resist pattern 225 as a mask, and a plating layer 230b is formed in a region where the resist pattern 225 is not disposed. The plating layer 230b is formed between the plurality of resist patterns 225. In the present embodiment, the plating layer 230a and the plating layer 230b are formed using the same nickel alloy (specifically, invar alloy), but the present invention is not limited to this example, and may be formed using different metal layers. In the present embodiment, the thickness of the plating layer 230b is adjusted to be in the range of 2 μm to 15 μm. Specifically, in the present embodiment, the thickness of the plating layer 230b is set to 3 μm. In the present embodiment, the plating layer 230b is formed of invar alloy, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.

As shown in fig. 6, the interval of the first plating layers 230a formed at the positions sandwiching the deformed resist pattern 225 (i.e., the interval of the adjacent first plating layers 230 a) is smaller than the interval of the second plating layers 230b formed at the positions sandwiching the deformed resist pattern 225 (i.e., the interval of the adjacent second plating layers 230 b). In other words, the width of the portion of the resist pattern 225 sandwiched by the first plated layers 230a after the deformation is smaller than the width of the portion sandwiched by the second plated layers 230b.

After the plating layer 230b is formed, the resist pattern 225 is removed as shown in fig. 7. By removing the resist pattern 225, a pattern composed of the plating layer 230a and the plating layer 230b is formed. The pattern formed by the plating layers 230a and 230b corresponds to the non-openings 112 (i.e., the shielding portions for shielding the vapor deposition material) shown in fig. 1 and 2. The region formed by removing the resist pattern 225 corresponds to the opening 111 shown in fig. 1 and 2. That is, in the present embodiment, the total film thickness of the plating layers 230a and 230b determines the film thickness of the mask portion 110.

As shown in fig. 7, the width of the upper surface of the plating layer 230b is narrower than the width of the upper surface of the plating layer 230a in cross section. Here, the difference between the width of the upper surface of the plating layer 230a and the width of the upper surface of the plating layer 230b is X. This makes it possible to increase the diameter of the upper end of the opening 111 to a larger diameter than the lower end of the opening 111, thereby reducing the phenomenon that the vapor deposition material advancing obliquely toward the vapor deposition mask cannot pass through the opening. The length of the difference X can be controlled by the amount of deformation of the resist pattern 220 shown in fig. 5.

Next, as shown in fig. 8, a holding frame 120 is disposed on a part of the non-opening portion 112 (a part not used as the mask portion 110). The holding frame 120 is bonded to the non-opening 112 by the adhesive force of an adhesive layer not shown. As shown in fig. 1, the holding frame 120 is disposed so as to surround the mask portion 110.

Next, as shown in fig. 9, a resist pattern 240 is formed on the mask portion 110 and the holding frame 120. The resist pattern 240 is formed by applying a photosensitive resin material on the mask portion 110 and the holding frame 120, and then performing an exposure process and a development (etching) process. The region where the resist pattern 240 is formed is a region other than the region where the connection portion 130 shown in fig. 1 and 2 is provided.

Next, as shown in fig. 10, the connection portion 130 is formed in a region where the resist pattern 240 is not disposed. The connection portion 130 is formed by electroplating. Specifically, the connection portion 130 is selectively formed in a region where the resist pattern 240 is not disposed, using the holding frame 120, the non-opening portion 112, and the seed layer 210 as seed layers. Therefore, as shown in fig. 10, the connection portion 130 is formed from the side wall of the holding frame 120 across the mask portion 110.

In the present embodiment, the connection portion 130 is continuously formed from the sidewall of the holding frame 120 to the upper side of the mask portion 110. This allows the holding frame 120 and the mask portion 110 to be connected via the connecting portion 130. The opening provided in the mask portion 110 at the portion overlapping the connection portion 130 has a function of physically separating the mask portion 110 from the holding frame 120 and a function of improving the adhesion between the mask portion 110 and the connection portion 130.

In the present embodiment, the connection portion 130 is formed of a plated layer (metal layer) made of a nickel alloy (specifically, invar alloy). In the present embodiment, the thickness of the connection portion 130 is adjusted to be in the range of 50nm to 200 nm. In the present embodiment, the connection portion 130 is formed of invar alloy, but the present invention is not limited to this example, and other metal materials may be used as long as they can be used for plating.

After the connection portion 130 is formed, the resist pattern 240 is removed as shown in fig. 11, and then the substrate 200 is removed. Specifically, after the holding frame 120 is fixed by suction or the like, the substrate 200 is mechanically peeled off from the mask portion 110, the holding frame 120, and the connection portion 130, thereby removing the substrate 200. At this time, the seed layer 210 and a part of the mask section 110 (the non-opening section 112 overlapping the holding frame 120) are removed together with the substrate 200.

Through the above manufacturing process, the vapor deposition mask 100 having the cross-sectional structure shown in fig. 12 is completed. As shown in fig. 12, the vapor deposition mask 100 of the present embodiment has a structure in which a film-like mask portion 110 is connected to a holding frame 120 via a connecting portion 130. In this case, the width of the opening 111 in the cross section (the distance between the plating layers 230 b) is larger at the upper end than at the lower end (the distance between the plating layers 230 a). Therefore, it is possible to reduce a phenomenon in which the vapor deposition material that has obliquely advanced toward the vapor deposition mask 100 cannot pass through the openings 111. In the present embodiment, the diameter of the vapor deposition source side of the openings 111 of the vapor deposition mask 100 can be enlarged by merely deforming the resist pattern used in the plating without performing the pattern formation. As described above, according to the present embodiment, the vapor deposition mask 100 having excellent vapor deposition efficiency can be realized by a simple method.

(modification 1)

In this modification, an example in which the resist pattern 220 is deformed into a shape different from that of fig. 5 will be described. Fig. 13 and 14 are sectional views showing a method for manufacturing a vapor deposition mask 100 according to modification 1 of the first embodiment of the present invention.

The state shown in fig. 4 is obtained in the same flow as in the first embodiment, and as shown in fig. 13, a resist pattern 225a is formed to deform the resist pattern 220. In the present modification, an example is shown in which the upper portion of the resist pattern 225a (the portion above the plating layer 230 a) is substantially circular. Unlike fig. 5, the resist pattern 225a does not contact the upper surface of the plating layer 230a, and the resist pattern 225a overlaps the plating layer 230a in a plan view of the shape. The shape of the upper portion of the resist pattern 225a can be realized by appropriately adjusting the conditions of the process when deforming the resist pattern 220 and the material constituting the resist pattern 220.

After the resist pattern 225a is formed, the plating layer 230b is formed again by electroplating. After the plating layer 230b is formed, the resist pattern 225a is removed. Thereby, as shown in fig. 14, the opening 111a and the non-opening 112a are formed.

Fig. 14 shows an enlarged view of an end portion (a region surrounded by the frame line 10) of the non-opening portion 112a. As shown in the enlarged view, the side surface of the plating layer 230b is curved so as to form a concave portion. The inclination of the straight line 11 connecting the edge of the upper surface and the edge of the lower surface of the plating layer 230b is clear, and the width (diameter) increases upward (toward the vapor deposition source during vapor deposition). Therefore, in the present modification, it is possible to reduce a phenomenon in which the vapor deposition material advancing obliquely toward the vapor deposition mask 100 cannot pass through the openings 111 a.

As shown in the enlarged frame line 12, the edge of the lower surface of the plating layer 230b and the edge of the upper surface of the plating layer 230a substantially coincide with each other in the present modification. That is, in the present modification, when the resist pattern 220 is deformed, the resist pattern 220 spreads in the lateral direction without contacting the surface of the plating layer 230a.

(modification 2)

In this modification, an example in which the resist pattern 220 is deformed into a shape different from that of fig. 5 and 13 will be described. Fig. 15 and 16 are sectional views showing a method for manufacturing a vapor deposition mask 100 according to modification 2 of the first embodiment of the present invention.

After the state shown in fig. 4 is obtained by the same flow as in the first embodiment, as shown in fig. 15, a resist pattern 225b for deforming the resist pattern 220 is formed. In the present modification, an example is shown in which the upper portion (portion above the plating layer 230 a) of the resist pattern 225b is substantially elliptical. The cross-sectional shape is qualitatively the same as that of fig. 13 described above, but the example shown in fig. 15 differs in that a part of the resist pattern 225a is in contact with the upper surface of the plating layer 230a. The shape of the upper portion of the resist pattern 225b can be realized by appropriately adjusting the conditions of the process when deforming the resist pattern 220 and the material constituting the resist pattern 220.

After the resist pattern 225b is formed, the plating layer 230b is formed again by electroplating. After the plating layer 230b is formed, the resist pattern 225a is removed. Thereby, as shown in fig. 16, the opening 111b and the non-opening 112b are formed.

Fig. 16 shows an enlarged view of an end portion (a region surrounded by the frame line 15) of the non-opening portion 112b. As shown in the enlarged view, the side surface of the plating layer 230b is curved so as to form a concave portion. Further, the inclination of the straight line 16 connecting the edge of the upper surface and the edge of the lower surface of the plating layer 230b can be clearly understood, and the width (diameter) increases as going upward (toward the deposition source at the time of deposition). Therefore, in the present modification, it is possible to reduce a phenomenon in which the vapor deposition material advancing obliquely toward the vapor deposition mask 100 cannot pass through the openings 111 b.

As shown by the frame line 17 in the enlarged view, unlike the above modification 1, the present modification has a distance between the edge of the lower surface of the plating layer 230b and the edge of the upper surface of the plating layer 230a. That is, in the example shown in fig. 16, a part of the upper surface of the plating layer 230a is exposed. In the present modification, when the resist pattern 220 is deformed and spread in the lateral direction, the portion of the resist pattern 220 protruding above the plating layer 230a comes into contact with the surface of the plating layer 230a, and thus the exposed surface as described above is formed.

< second embodiment >

In this embodiment, an example of manufacturing the vapor deposition mask 100 by a method different from that of the first embodiment will be described. Note that, in the method for manufacturing the vapor deposition mask 100 according to the present embodiment, the same elements as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

A method for manufacturing the vapor deposition mask 100 according to the present embodiment will be described in detail with reference to the drawings. Fig. 17 to 26 are views showing a method for manufacturing a vapor deposition mask 100 according to a first embodiment of the present invention.

First, as shown in fig. 17, a seed layer 210, a resist layer 261, and a resist layer 262 are formed over a substrate 200. In this embodiment, a non-photosensitive resin material is used as the resist layer 261, and a photosensitive resin material is used as the resist layer 262. However, the present invention is not limited to this example, and a photosensitive resin material may be used as the resist layer 216. In this embodiment, a material having a higher etching rate with respect to a developer than the resist layer 262 is used as the resist layer 261.

As shown in fig. 17, the film thickness of the resist layer 261 is smaller than the film thickness of the resist layer 262. The film thickness of the resist layer 262 is preferably 2 times or more (preferably 3 times or more and 5 times or less) the film thickness of the resist layer 261. As described later, the shape of the opening 111 constituting the mask portion 110 can be set by the ratio of the film thicknesses of the resist layer 261 and the resist layer 262.

After the resist layer 261 and the resist layer 262 are formed, as shown in fig. 18, the resist layer 262 is subjected to exposure treatment and development (etching) treatment to form a resist pattern 262a. The region where the resist pattern 262a is formed corresponds to the region where the plurality of openings 111 are provided using the mask portion 110 described with reference to fig. 1 and 2.

After the resist pattern 262a is formed, as shown in fig. 19, the resist layer 261 is subjected to development (etching) treatment using the resist pattern 262a as a mask, thereby forming a resist pattern 261a. The region where the resist pattern 261a is formed corresponds to the region where the plurality of openings 111 are provided, using the mask portion 110 described with reference to fig. 1 and 2.

As shown in fig. 19, the resist pattern 261a is etched such that the width of the resist pattern 261a is narrower than the width of the resist pattern 262a in cross section. In this embodiment, as described above, a material having a higher etching rate with respect to a developer than the resist layer 262 is used as the resist layer 261. Therefore, the side surface of the resist pattern 261a is retreated by overetching, and the resist pattern 262a can be formed in a state of overhanging with respect to the resist pattern 261a. In this case, the receding amount of the resist pattern 261a can be controlled by the time of the etching process.

Next, as shown in fig. 20, a plating layer 230 is formed in a region where the resist pattern 261a and the resist pattern 262a are not arranged. That is, the region where the plating layer 230 is formed corresponds to the region where the non-opening 112 of the mask 110 is provided, which has been described with reference to fig. 1 and 2 in the first embodiment. In this embodiment, the plating layer 230 is a metal layer made of invar alloy.

In the present embodiment, the plating layer 230 is grown at least to a position where the upper surface is located between the resist patterns 262a. That is, the film thickness of the plating layer 230 is made larger than at least the film thickness of the resist pattern 261a. In the present embodiment, the thickness of the plating layer 230 is adjusted to be in the range of 3 μm to 20 μm. Specifically, in the present embodiment, the thickness of the plating layer 230 is set to 5 μm.

After the plating layer 230 is formed, as shown in fig. 21, the resist pattern 261a and the resist pattern 262a are removed. By removing the resist pattern 261a and the resist pattern 262a, a pattern composed of the plating layer 230 is formed. The pattern formed by the plating layer 230 corresponds to the non-opening 112 (i.e., a shielding portion that shields the vapor deposition material) shown in fig. 1 and 2. The region formed by removing the resist pattern 261a and the resist pattern 262a corresponds to the opening 111 described with reference to fig. 1 and 2. That is, in the present embodiment, the film thickness of the plating layer 230 determines the film thickness of the mask portion 110.

As shown in fig. 21, the width of the upper surface of the non-opening 112 is narrower than the width of the lower surface of the non-opening 112 in cross section. Here, the difference between the width of the upper surface of the non-opening 112 and the width of the lower surface of the non-opening 112 is X. This makes it possible to reduce the phenomenon that the vapor deposition material advancing obliquely to the vapor deposition mask cannot pass through the openings, because the diameter of the upper end of the opening 111 is larger than the diameter of the lower end of the opening 111. The length of the difference X can be controlled by the amount of retreat of the resist pattern 261a shown in fig. 19.

As described above, after the openings 111 and the non-openings 112 constituting the mask portion 110 are formed, the vapor deposition mask 100 shown in fig. 22 is completed by the same process as that of fig. 8 to 11 of the first embodiment. As shown in fig. 22, the vapor deposition mask 100 of the present embodiment has a structure in which a film-like mask portion 110 is connected to a holding frame 120 via a connecting portion 130. At this time, in the opening 111 in a plan view, the width of the upper end (the distance between the upper surfaces of the non-openings 112) is wider than the width of the lower end (the distance between the lower surfaces of the non-openings 112). Therefore, it is possible to reduce a phenomenon in which the vapor deposition material advancing obliquely toward the vapor deposition mask 100 cannot pass through the openings 111. As described above, according to the present embodiment, the vapor deposition mask 100 having excellent vapor deposition efficiency can be realized.

(modification 1)

In the present modification, an example in which the resist pattern 262a is formed in a shape different from that of fig. 18 will be described. Fig. 23 to 26 are sectional views showing a method for manufacturing a vapor deposition mask 100 according to modification 1 of the second embodiment of the present invention.

After the state shown in fig. 17 is obtained in the same manner as in the second embodiment, as shown in fig. 23, the resist layer 262 is subjected to exposure treatment and development (etching) treatment, thereby forming a resist pattern 262a having a reverse tapered shape. That is, in the present modification, the width of the resist pattern 262a in plan view increases upward (in a direction away from the resist layer 261).

In the present embodiment, a photosensitive resin material is used as the resist layer 262 constituting the resist pattern 262a. The photosensitive resin material has an advantage that a reverse tapered shape can be easily formed by adjusting exposure conditions and the like. However, without being limited to this example, the resist pattern 262a may also be a forward tapered shape. When the resist layer 262 is formed of a photosensitive resin material, the taper shape can be controlled by adjusting exposure conditions and the like, and thus the taper shape can be controlled regardless of whether it is a reverse taper shape or a forward taper shape. The region where the resist pattern 262a is formed corresponds to the region of the mask portion 110 described with reference to fig. 1 and 2 where the plurality of openings 111 are provided.

After the resist pattern 262a is formed, as shown in fig. 24, the resist layer 261 is subjected to development (etching) treatment using the resist pattern 262a as a mask, thereby forming a resist pattern 261a. In the present modification, the resist pattern 261a is etched such that the width of the resist pattern 261a is narrower than the width of the resist pattern 262a in a plan view.

Next, as shown in fig. 25, the plating layer 230 is formed in a region where the resist pattern 261a and the resist pattern 262a are not arranged. After the plating layer 230 is formed, as shown in fig. 26, the resist pattern 261a and the resist pattern 262a are removed. By removing the resist pattern 261a and the resist pattern 262a, a pattern composed of the plating layer 230 is formed.

The pattern formed by the plating layer 230 corresponds to the non-openings 112 (i.e., the shielding portions for shielding the vapor deposition material) shown in fig. 1 and 2. The region formed by removing the resist pattern 261a and the resist pattern 262a corresponds to the opening 111 described with reference to fig. 1 and 2.

As shown in fig. 26, the non-opening portion 112 has a forward tapered shape in a plan view. That is, as shown in the enlarged view corresponding to the portion surrounded by the wire 20, the inclined surface 21 is formed so that the thickness of the non-opening portion 112 becomes thicker as the distance from the opening portion 111 increases at the upper portion of the non-opening portion 112. Therefore, the diameter of the upper end of the opening 111 of the present modification can be made larger than the diameter of the upper end of the opening 111 shown in fig. 21. This reduces the phenomenon that the vapor deposition material advancing obliquely toward the vapor deposition mask cannot pass through the openings.

As an embodiment of the present invention, the above-described embodiments can be combined with each other as appropriate as long as they do not contradict each other. In the method for manufacturing a vapor deposition mask according to each embodiment, a method in which a person skilled in the art appropriately adds, deletes, or changes the design of a component or adds, omits, or changes the conditions of a process is included in the scope of the present invention as long as the method is within the spirit of the present invention.

It is to be understood that the present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the scope of the present invention.

Claims (11)

1. A method for manufacturing a vapor deposition mask, comprising:

a step of forming a first plating layer using the resist pattern as a mask;

a step of deforming the resist pattern; and

and forming a second plating layer on the first plating layer using the deformed resist pattern as a mask.

2. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern causes the deformed resist pattern to overlap a part of the first plating layer.

3. The method for manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern includes a step of immersing the resist pattern in an organic base solvent.

4. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the step of deforming the resist pattern includes a step of heating the resist pattern.

5. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

the interval of the first plating layer formed at the position sandwiching the resist pattern after the deformation is smaller than the interval of the second plating layer formed at the position sandwiching the resist pattern after the deformation.

6. The method of manufacturing a vapor deposition mask according to claim 1, wherein:

further comprising the step of forming said resist pattern over the metal layer,

the first plating layer and the second plating layer are formed by electroplating.

7. The method for manufacturing a vapor deposition mask according to claim 1, wherein:

further comprising the step of removing the deformed resist pattern after forming the second plating layer.

8. A method for manufacturing a vapor deposition mask, comprising:

a step of forming a second resist layer over the first resist layer;

a step of etching the second resist layer to form a second resist pattern;

a step of forming a first resist pattern by etching the first resist layer using the second resist pattern as a mask; and

a step of forming a plating layer using the first resist pattern and the second resist pattern as a mask,

the first resist pattern is etched such that a width of the first resist pattern becomes narrower than a width of the second resist pattern in a cross section.

9. The method for manufacturing a vapor deposition mask according to claim 8, wherein:

the first resist layer has an etching rate greater than that of the second resist layer.

10. The method of manufacturing a vapor deposition mask according to claim 8, wherein:

the first resist layer and the second resist layer are formed over a metal layer,

the plating layer is formed by electroplating.

11. The method of manufacturing a vapor deposition mask according to claim 8, wherein:

the step of etching the second resist layer to form a second resist pattern includes a step of forming the second resist pattern into a reverse tapered shape.

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