WO2022149346A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
- Publication number
- WO2022149346A1 WO2022149346A1 PCT/JP2021/041139 JP2021041139W WO2022149346A1 WO 2022149346 A1 WO2022149346 A1 WO 2022149346A1 JP 2021041139 W JP2021041139 W JP 2021041139W WO 2022149346 A1 WO2022149346 A1 WO 2022149346A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- pad
- pad holder
- substrate
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
Definitions
- CMP (Chemical Mechanical Polishing) equipment exists as a type of substrate processing equipment used in the semiconductor processing process.
- the CMP device can be divided into "face-up type (method in which the polished surface of the substrate faces upward)” and “face-down type (method in which the polished surface of the substrate faces downward)” depending on the direction in which the surface to be polished of the substrate faces. Can be separated.
- Patent Document 1 discloses that in a face-up type polishing apparatus, a polishing pad having a diameter smaller than that of the substrate is rotated and brought into contact with the substrate to polish the substrate.
- a circulation path is formed radially from the center of the polishing tool for holding the polishing pad, and the polishing liquid supplied to the center of the polishing tool is supplied to the substrate from the outer periphery of the polishing tool.
- this polishing device is configured so that the polishing liquid supplied to the substrate from the outer periphery of the polishing tool is collected in the center of the polishing tool by the spiral groove formed in the polishing pad.
- Patent Document 1 does not consider suppressing the surface to be polished of the substrate from being damaged and improving the polishing rate.
- a rotary joint (or a part having a function equivalent to that of the rotary joint: hereinafter simply referred to as a rotary joint) is provided.
- a rotary joint or a part having a function equivalent to that of the rotary joint: hereinafter simply referred to as a rotary joint.
- the polishing liquid when the polishing liquid is not supplied via the polishing tool, it becomes difficult to sufficiently supply the polishing liquid between the polishing surface of the polishing pad and the surface to be polished of the substrate.
- the polishing liquid can be circulated by using the polishing pad having the spiral groove formed and forming a circulation path in the polishing tool.
- the polishing liquid since the polishing liquid is circulated through the polishing tool, fresh polishing liquid cannot always be supplied between the polishing tool and the substrate. Therefore, in the method of Patent Document 1, a sufficient amount of fresh polishing liquid cannot be supplied to the center of the surface to be polished of the substrate, and the polishing rate may decrease. Further, when the polishing liquid is circulated and used, the residue generated during the polishing of the substrate may damage the surface to be polished of the substrate.
- one of the purposes of the present application is to prevent the surface to be polished of the substrate from being damaged and to improve the polishing rate.
- a table for supporting the substrate, a pad holder for holding a polishing pad for polishing the substrate supported by the table, and a polishing liquid are supplied around the pad holder.
- the pad holder includes a discharge hole formed in the center of a holding surface for holding the polishing pad, and a discharge hole from the discharge hole, which includes a nozzle for rotating the pad holder and a pad rotation mechanism for rotating the pad holder.
- a substrate processing apparatus having a discharge path communicating with the outside of a pad holder is disclosed.
- FIG. 1 is a perspective view schematically showing an overall configuration of a substrate processing apparatus according to an embodiment.
- FIG. 2 is a plan view schematically showing the overall configuration of the substrate processing apparatus according to the embodiment.
- the substrate processing apparatus 1000 shown in FIGS. 1 and 2 includes a table 100, a multi-axis arm 200, support members 300A and 300B, a dresser 500, and a film thickness measuring instrument (end point detector) 600.
- the multi-axis arm 200 is omitted for the sake of clarity in the illustration.
- the table 100 is a member for supporting the substrate WF so that the surface to be polished of the substrate WF to be processed faces upward in the vertical direction.
- the table 100 has a support surface 100a for supporting the back surface of the substrate WF on the opposite side of the surface to be polished, and is rotatably configured by a drive mechanism such as a motor (not shown).
- a plurality of holes 102 are formed in the support surface 100a, and the table 100 is configured so that the substrate WF can be vacuum-sucked through the holes 102.
- the substrate processing apparatus 1000 of the present embodiment is a face-up type substrate processing apparatus that polishes the substrate WF with the surface to be polished of the substrate WF facing upward.
- FIG. 3 is a perspective view schematically showing a multi-axis arm according to an embodiment.
- the multi-axis arm 200 is a member that holds a plurality of processing tools for performing various processing on the substrate WF supported by the table 100, and is adjacent to the table 100. Be placed.
- the multi-axis arm 200 of the present embodiment has a large-diameter polishing pad 222 for polishing the substrate WF, a cleaning tool 232 for cleaning the substrate WF, and a small-diameter polishing pad 242 for finishing polishing the substrate WF.
- a photographing member (camera) 252 for measuring the diameter of the substrate WF, and are configured to hold.
- the multi-axis arm 200 is supported by a swing shaft 210 extending in a direction orthogonal to the substrate WF (height direction), a rotation drive mechanism 212 such as a motor for rotationally driving the swing shaft 210, and a swing shaft 210.
- a rotation drive mechanism 212 such as a motor for rotationally driving the swing shaft 210
- a swing shaft 210 includes a first arm 220, a second arm 230, a third arm 240, and a fourth arm 250, which are arranged radially around the swing shaft 210.
- a rotary shaft 224 extending in the height direction is attached to the first arm 220, and a pad holder 226 is attached to the tip of the rotary shaft 224.
- a large-diameter polishing pad 222 is held in the pad holder 226.
- the multi-axis arm 200 includes an elevating mechanism 227 for elevating and lowering the pad holder 226 with respect to the substrate WF.
- the elevating mechanism 227 can be realized by a known mechanism such as an air cylinder.
- the multi-axis arm 200 includes a pad rotation mechanism 229 for rotating the pad holder 226.
- the pad rotation mechanism 229 can be realized by a known mechanism such as a motor, and the pad holder 226 can be rotated by rotating the rotary shaft 224.
- the multi-axis arm 200 includes a nozzle 228 arranged around the pad holder 226.
- the nozzle 228 is configured to supply the polishing liquid (slurry) to the substrate WF.
- the nozzle 228 is arranged in the swing path of the first nozzle 228-1 arranged in the swing path of the pad holder 226 and the pad holder 226 opposite to the first nozzle 228-1 with the pad holder 226 interposed therebetween.
- the second nozzle 228-2 is provided.
- the first nozzle 228-1 and the second nozzle 228-2 are configured to supply the polishing liquid to the surface to be polished of the substrate WF, respectively.
- a rotary shaft 234 extending in the height direction is attached to the second arm 230, and a cleaning tool holder 236 is attached to the tip of the rotary shaft 234.
- the cleaning tool 232 is held in the cleaning tool holder 236.
- the multi-axis arm 200 includes an elevating mechanism 237 for elevating and lowering the cleaning tool holder 236 with respect to the substrate WF.
- the elevating mechanism 237 can be realized by a known mechanism such as an air cylinder.
- the multi-axis arm 200 includes a cleaning tool rotating mechanism 239 for rotating the cleaning tool holder 236.
- the cleaning tool rotation mechanism 239 can be realized by a known mechanism such as a motor, and the cleaning tool holder 236 can be rotated by rotating the rotary shaft 234.
- the multi-axis arm 200 includes an atomizer 238 for supplying a cleaning liquid around the cleaning tool holder 236.
- the atomizer 238 is provided on both sides of the cleaning tool holder 236 in the swing direction with the cleaning tool holder 236 interposed therebetween, and is configured to discharge the cleaning liquid to the substrate WF.
- a rotating shaft 244 extending in the height direction is attached to the third arm 240, and a pad holder 246 is attached to the tip of the rotating shaft 244.
- the pad holder 246 holds a polishing pad 242 having a small diameter.
- the multi-axis arm 200 includes an elevating mechanism 247 for elevating and lowering the pad holder 246 with respect to the substrate WF.
- the elevating mechanism 247 can be realized by a known mechanism such as an air cylinder.
- the multi-axis arm 200 includes a pad rotation mechanism 249 for rotating the pad holder 246.
- the pad rotation mechanism 249 can be realized by a known mechanism such as a motor, and the pad holder 246 can be rotated by rotating the rotary shaft 244.
- the photographing member 252 is held by the fourth arm 250.
- the multi-axis arm 200 includes a nozzle 248 for supplying the polishing liquid around the pad holder 246.
- the nozzle 248 is arranged in the swing path of the first nozzle 248-1 arranged in the swing path of the pad holder 246 and the pad holder 246 on the opposite side of the pad holder 246 from the first nozzle 248-1.
- the second nozzle 248-2 is provided.
- the first nozzle 248-1 and the second nozzle 248-2 are configured to supply the polishing liquid to the surface to be polished of the substrate WF.
- the first arm 220, the second arm 230, the third arm 240, and the fourth arm 250 swing counterclockwise by 90 degrees in a plan view. It extends radially around the dynamic shaft 210.
- the rotary drive mechanism 212 can move any of the large-diameter polishing pad 222, the cleaning tool 232, the small-diameter polishing pad 242, and the photographing member 252 onto the substrate WF by rotationally driving the swing shaft 210. can. Further, the rotation drive mechanism 212 can move the polishing pad 222 or the polishing pad 242 onto the dresser 500 by rotationally driving the swing shaft 210.
- the rotary drive mechanism 212 rotates and drives the swing shaft 210 alternately clockwise and counterclockwise, whereby the first arm 220, the second arm 230, the third arm 240, and the fourth arm 240 are driven. It has the function of a swing mechanism that swings the arm 250.
- the rotation drive mechanism 212 rotates the swing shaft 210 alternately clockwise and counterclockwise with the polishing pad 222, the cleaning tool 232, or the polishing pad 242 located on the substrate WF.
- the polishing pad 222 (pad holder 226), the cleaning tool 232 (cleaning tool holder 236), or the polishing pad 242 (pad holder 246) can be swung with respect to the substrate WF.
- the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is swiveled and swung in the radial direction of the substrate WF by the rotation drive mechanism 212, that is, reciprocated along an arc, but the present invention is limited to this. Not done.
- the swing mechanism may have a configuration in which the polishing pad 222, the cleaning tool 232, or the polishing pad 242 is linearly swung in the radial direction of the substrate, that is, reciprocated along the straight line.
- the substrate processing device 1000 rotates the table 100 and rotates the polishing pad 222, and the rotation drive mechanism while pressing the polishing pad 222 against the substrate WF by the elevating mechanism 227.
- the substrate WF is configured to be polished by swinging the polishing pad 222 by 212.
- the substrate processing apparatus 1000 has a first support member 300A arranged in the swing path of the polishing pad 222 on the outside of the table 100 and a first support member sandwiching the table 100.
- a second support member 300B arranged in the swing path of the polishing pad 222 on the opposite side of the 300A is included.
- the first support member 300A and the second support member 300B are line-symmetrical with the substrate WF interposed therebetween. Therefore, in the following, the first support member 300A and the second support member 300B will be collectively referred to as the support member 300 as appropriate.
- the function of the support member 300 when the large-diameter polishing pad 222 is swung with respect to the substrate WF will be described, but the same applies to the cleaning tool 232 or the small-diameter polishing pad 242. ..
- the support member 300 is a member for supporting the polishing pad 222 that is swung outward from the table 100 by the rotation of the swing shaft 210. That is, the substrate processing apparatus 1000 swings (overhangs) the polishing pad 222 until it protrudes to the outside of the substrate WF when polishing the substrate WF, so that the surface to be polished of the substrate WF is uniformly polished. It is composed.
- the polishing pad 222 is overhanged, the pressure of the polishing pad 222 is concentrated on the peripheral edge of the substrate WF due to various factors such as the pad holder 226 being tilted, and the surface to be polished of the substrate WF becomes uniform. It may not be polished. Therefore, in the substrate processing apparatus 1000 of the present embodiment, support members 300 for supporting the polishing pad 222 overhanging on the outside of the substrate WF are provided on both sides of the table 100.
- the first support member 300A and the second support member 300B each have support surfaces 301a and 301b capable of supporting the entire polishing surface 222c in contact with the substrate WF of the polishing pad 222. That is, since the support surfaces 301a and 301b each have an area larger than the area of the polishing surface 222c of the polishing pad 222, even if the polishing pad 222 completely overhangs to the outside of the substrate WF, the polishing surface 222c The whole is supported by the support surfaces 301a and 301b.
- the entire polishing surface of the polishing pad 222 is in contact with the substrate WF and is supported, and is oscillated to the outside of the table 100. Since the entire polished surface is supported by the support member 300 even during this operation, the surface to be polished and the support surfaces 301a and 301b of the substrate WF do not protrude during the swing.
- the substrate processing apparatus 1000 includes a film thickness measuring instrument 600 for measuring the film thickness profile of the surface to be polished of the substrate WF while polishing the substrate WF.
- the film thickness measuring instrument 600 can be composed of various sensors such as an eddy current type sensor or an optical type sensor.
- a rotary shaft 610 extending in the height direction is arranged adjacent to the table 100.
- the rotary shaft 610 is rotatable around the axis of the rotary shaft 610 by a rotary drive mechanism such as a motor (not shown).
- a swing arm 620 is attached to the rotary shaft 610, and the film thickness measuring instrument 600 is attached to the tip of the swing arm 620.
- the film thickness measuring instrument 600 is configured to swing around the axis of the rotating shaft 610 by the rotation of the rotating shaft 610. Specifically, the film thickness measuring instrument 600 can swing along the radial direction of the substrate WF by the rotation of the rotary shaft 610 during the polishing of the substrate WF. The film thickness measuring instrument 600 swings to a position retracted from the substrate WF when the polishing pad 222 swings on the substrate WF, and the substrate WF when the polishing pad 222 does not swing on the substrate WF. It is configured to swing on.
- the film thickness measuring instrument 600 can swing on the substrate WF at a timing that does not interfere with the polishing pad 222 swinging on the substrate WF, and the substrate WF polished by the polishing pad 222 can be swung.
- the film thickness profile can be measured over time.
- the film thickness measuring instrument 600 can detect the end point of polishing of the substrate WF when the measured film thickness profile of the substrate WF becomes a desired film thickness profile.
- the dresser 500 is arranged in the turning path of the polishing pads 222 and 242 by the rotation of the swing shaft 210.
- the dresser 500 is a member for sharpening (dressing) the polishing pads 222 and 242 by strongly electrodepositing diamond particles or the like on the surface thereof.
- the dresser 500 is configured to be rotated by a rotation drive mechanism such as a motor (not shown). Pure water can be supplied to the surface of the dresser 500 from a nozzle (not shown).
- the substrate processing apparatus 1000 rotates the dresser 500 while supplying pure water from the nozzle to the dresser 500, and rotates the polishing pads 222 and 242 to swing the dresser 500 while pressing the dresser 500.
- the polishing pads 222 and 242 are scraped off by the dresser 500, and the polished surface of the polishing pads 222 and 242 is dressed.
- FIG. 4 is a perspective view schematically showing a pad holder according to an embodiment.
- FIG. 5 is a cross-sectional view schematically showing a pad holder according to an embodiment.
- the configuration of the pad holder 226 will be described, but the pad holder 246 also has the same configuration.
- the pad holder 226 has a plate-shaped first holder main body 221-1 attached to the lower end of the rotary shaft 224 and a plate-shaped plate-shaped one provided below the first holder main body 221-1.
- the second holder body 221-2 of the above is provided.
- the pad holder 226 includes an airbag 223 sandwiched between the first holder body 221-1 and the second holder body 221-2.
- the rotary shaft 224 and the first holder body 221-1 are formed with a flow path 224a communicating with the airbag 223.
- the multi-axis arm 200 can adjust the pressing force of the polishing pad 222 with respect to the substrate WF by supplying gas to the airbag 223 from a fluid source (not shown) via the flow path 224a.
- the pad holder 226 (second holder body 221-2) has a discharge hole 221-2a formed in the center of the holding surface 221-2c that holds the polishing pad 222, and the pad holder 226 from the discharge hole 221-2a. It has a discharge path 221-2b that communicates with the outside.
- the discharge path 221-2b is formed in the second holder body 221-2 so as to communicate the discharge hole 221-2a with the side surface of the second holder body 221-2.
- FIG. 6 is a plan view schematically showing the second holder main body 221-2 according to the embodiment.
- the discharge passage 221-2b extends radially from the discharge hole 221-2a and opens at a plurality of locations (four locations in the present embodiment) on the side surface of the second holder main body 221-2. ..
- the discharge hole 221-2a is a round hole
- the discharge path 221-2b is a discharge hole 221 from the discharge hole 221-2a when the second holder main body 221-2 is viewed in a plan view. It extends in the tangential direction of -2a and opens at a plurality of places on the side surface of the second holder main body 221-2.
- an example in which four discharge paths 221-2b are formed is shown, but the number of discharge paths 221-2b is arbitrary.
- FIG. 7 is a plan view schematically showing a polishing pad according to an embodiment.
- the polishing pad 222 has a through hole 222b formed in the center of the polishing surface 222c in contact with the substrate WF.
- the through hole 222b has the same size and shape as the discharge hole 221-2a.
- the through hole 222b and the discharge hole 221-2a communicate with each other.
- a groove 222a that communicates the through hole 222b and the side surface of the polishing pad 222 is formed on the polishing surface 222c of the polishing pad 222.
- the groove 222a includes a spiral groove that communicates the through hole 222b and the side surface of the polishing pad 222.
- the substrate processing apparatus 1000 of the present embodiment does not supply the polishing liquid to the substrate WF via the pad holder 226, but supplies the polishing liquid by the nozzles 248 arranged around the pad holder 226. .. This eliminates the need to provide a rotary joint, so that particles caused by wear of parts inside the rotary joint are mixed with the polishing liquid between the polishing pad 222 and the substrate WF to damage the surface to be polished of the substrate WF. Can be suppressed.
- the substrate processing apparatus 1000 of the present embodiment can easily transfer the polishing liquid from the outside to the center of the polishing pad 222 by using the polishing pad 222 in which the spiral groove 222a is formed.
- the polishing pad 222 on which the spiral groove 222a is formed is simply used, air is concentrated in the center of the polishing pad 222 and the pressure is increased, and as a result, the polishing liquid is transferred to the center of the polishing pad 222. May be inadequate.
- the through hole 222b is formed in the center of the polishing pad 222
- the second holder main body 221-2 has a discharge hole 221-2a communicating with the through hole 222b and a discharge hole 221-2.
- a discharge path 221-2b that communicates the hole 221-2a with the outside of the pad holder 226 is formed.
- the discharge path 221-2b extends radially from the discharge hole 221-2a, and centrifugal force acts on the discharge path 221-2b, so that the polishing liquid transferred to the center of the polishing pad 222 is transferred to the center of the polishing pad 222. It can be discharged to the outside of the pad holder 226 through the through hole 222b, the discharge hole 221-2a, and the discharge path 221-2b.
- the polishing liquid transferred to the center of the polishing pad 222 by the spiral groove 222a spirally rises in the discharge hole 221-2a. In this regard, as shown in FIG.
- the polishing liquid spirally raised from the discharge hole 221-2a is discharged from the discharge path 221-. It is easy to flow to 2b.
- the polishing liquid is discharged to the outside of the pad holder 226 by centrifugal force, so that the polishing liquid supplied around the pad holder 226 can be more smoothly transferred to the center of the polishing pad 222.
- a sufficient amount of polishing liquid can be supplied between the substrate WF and the polishing pad 222, so that the polishing rate of the substrate WF can be improved.
- the substrate processing apparatus 1000 of the present embodiment is configured to polish the substrate WF while swinging the pad holder 226 so that the polishing pad 222 is supported by the support member 300.
- the multi-axis arm 200 is configured to supply the polishing liquid from the nozzle 228 not only when the polishing pad 222 is in contact with the substrate WF but also when the polishing pad 222 is in contact with the support member 300. To. When the polishing pad 222 is in contact with the support member 300, the polishing liquid supplied from the nozzle 228 is transferred to the center of the polishing pad 222 as described above, so that the polishing pad 222 is used for polishing the substrate WF. It will be filled with the unpolished polishing liquid.
- the pad holder 226 is swung to bring the polishing pad 222 into contact with the substrate WF, the substrate WF is polished, so that the surface to be polished of the substrate WF can be uniformly polished and the polishing rate is increased. Can be improved.
- the polishing pad 222 has a groove formed in the polishing surface 222c that connects the through hole 222b in the center of the polishing surface 222c and the side surface of the polishing pad 222, and is configured to transfer the polishing liquid to the center of the polishing pad 222. It doesn't matter if it is.
- FIG. 9 is a cross-sectional view schematically showing a pad holder according to an embodiment.
- FIG. 10 is a plan view of the pad holder shown in FIG. 9 as viewed from above.
- the configuration of the pad holder 226 according to the embodiment will be described together with FIGS. 9 and 10, but the pad holder 246 may have the same configuration.
- the pad holder 226 shown in FIG. 9 has the same structure as the pad holder 226 shown in FIG.
- the substrate processing apparatus 1000 includes a polishing liquid recovery member 270.
- the polishing liquid recovery member 270 includes an annular portion 272 arranged so as to surround the second holder main body 221-2 of the pad holder 226, and an extension portion 274 extending radially outward from the annular portion 272.
- An annular polishing liquid recovery passage 276 that receives the polishing liquid discharged from the discharge path 221-2b is defined in the annular portion 272.
- the polishing liquid recovery passage 278 is defined in the extension portion 274.
- the polishing liquid recovery passage 276 of the annular portion 272 communicates with the polishing liquid recovery passage 278, and the polishing liquid discharged from the discharge path 221-2b is recovered through the polishing liquid recovery passage 276 and the polishing liquid recovery passage 278.
- the recovered polishing liquid is discharged to the outside of the table 100, and is discarded together with the polishing liquid flowing down from the table 100.
- the recovered polishing liquid may be reused by subjecting it to an appropriate treatment such as removal of residue.
- the polishing liquid recovery member 270 is fixed to the first arm 220 so as not to come into contact with the pad holder 226. Therefore, the polishing liquid recovery member 270 does not rotate together with the pad holder 226, but swings together with the pad holder 226. However, it is preferable that the annular portion 272 of the polishing liquid recovery member 270 is arranged close to the pad holder 226 in order to efficiently recover the polishing liquid. When the polishing liquid recovery member 270 is provided around the pad holder 246, the polishing liquid recovery member 270 is fixed to the third arm 220.
- FIG. 8 is a flowchart of the substrate processing method according to the embodiment.
- the polishing pad 222 is attached to the pad holder 226 (attachment step S100).
- a through hole 222b is formed in the center of the polishing surface 222c, and a spiral groove 222a communicating the through hole 222b and the side surface of the polishing pad 222 is formed.
- a polishing pad 222 formed on the polishing surface 222c is used.
- a discharge hole 221-2a is formed in the central portion of the holding surface 221-2c, and the discharge hole 221-2a is formed outside the pad holder 226.
- a pad holder 226 in which a communicating discharge path 221-2b is formed is used.
- the substrate WF is installed on the table 100 (installation step S110).
- the polishing liquid is supplied from the nozzle 228 arranged around the pad holder 226 toward the surface to be polished of the substrate WF (supply step S120).
- the supply step S120 continuously supplies the polishing liquid from the nozzle 228 while performing the following polishing process.
- the pad holder 226 is rotated by using the pad rotation mechanism 229 (rotation step S130).
- the table 100 is rotated and the polishing pad 222 is pressed against the substrate WF by using the elevating mechanism 227 and the airbag 223 (pressing step S140).
- the pad holder 226 is oscillated in the radial direction of the substrate by using the rotation drive mechanism 212 (oscillation step S150).
- the swing step S150 swings the pad holder 226 between the substrate WF and the support member 300.
- the supply step S120 is configured to supply the polishing liquid to the swing path of the pad holder 226.
- the polishing liquid is supplied to the surface to be polished of the substrate WF, and the polishing is shaken to the outside of the table 100 by the shaking step S150.
- the pad 222 is supported by the support member 300, it is configured to supply the polishing liquid to the support member 300. As described above, the substrate WF is polished.
- the substrate processing method determines whether or not the film thickness profile measured by the film thickness measurement step S160 has a desired film thickness profile (determination step S170). When it is determined that the desired film thickness profile is not obtained (determination step S170, No), the substrate processing method returns to the film thickness measurement step S160 and repeats the processing. On the other hand, in the substrate processing method, when it is determined that the desired film thickness profile is obtained (determination step S170, Yes), the polishing process is terminated.
- the polishing liquid is supplied from the nozzles 248 arranged around the pad holder 226, so that it is not necessary to provide a rotary joint.
- the polishing liquid is supplied from the nozzles 248 arranged around the pad holder 226, so that it is not necessary to provide a rotary joint.
- the polishing pad 222 in which the spiral groove 222a is formed is used, and the pad holder 226 in which the discharge hole 221-2a and the discharge path 221-2b are formed is used. Therefore, the gas collected in the center of the polishing pad 222 can be discharged to the outside of the pad holder 226. Further, since the polishing liquid transferred to the center of the polishing pad 222 by the spiral groove 222a can be discharged from the discharge path 221-2b by the centrifugal force accompanying the rotation of the pad holder 226, the polishing is performed at the center of the polishing pad 222. The liquids can be transferred sequentially.
- polishing liquid discharged from the discharge path 221-2b can be recovered by the polishing liquid recovery member 270. Therefore, it is possible to prevent the polishing liquid used for polishing from being supplied between the polishing pad 222 and the substrate WF again, and to polish the substrate WF with a fresh polishing liquid.
- the present application supplies a table for supporting a substrate, a pad holder for holding a polishing pad for polishing the substrate supported by the table, and a polishing liquid around the pad holder.
- the pad holder includes a nozzle for rotating the pad holder and a pad rotation mechanism for rotating the pad holder, and the pad holder is formed from a discharge hole formed in the center of a holding surface for holding the polishing pad and from the discharge hole.
- a substrate processing apparatus having a discharge path communicating with the outside of the pad holder.
- the present application discloses, as an embodiment, a substrate processing apparatus in which the discharge path is formed in the pad holder so as to communicate the discharge hole and the side surface of the pad holder.
- the present application discloses, as an embodiment, a substrate processing apparatus in which the discharge path is formed in the pad holder so as to extend radially from the discharge hole and open at a plurality of locations on the side surface of the pad holder. ..
- the discharge hole is a round hole
- the discharge path extends from the discharge hole in the tangential direction of the discharge hole when the pad holder is viewed in a plan view.
- a substrate processing apparatus formed in the pad holder so as to open at a plurality of locations on the side surface of the pad holder.
- the pad holder is a polishing pad in which a through hole communicating with the discharge hole is formed on a polishing surface in contact with a substrate supported by the table, and the pad holder is the same as the through hole.
- a substrate processing apparatus in which a groove communicating with a side surface of the polishing pad is configured to hold the polishing pad formed on the polishing surface.
- the present application discloses, as an embodiment, a substrate processing apparatus in which the groove includes a spiral groove communicating the through hole and the side surface of the polishing pad.
- a swing mechanism for swinging the pad holder in the radial direction of the substrate is used.
- a support member for supporting a polishing pad swung outward by the swing mechanism and a substrate processing device are disclosed.
- the nozzle is a first nozzle arranged in the swing path of the pad holder and the pad holder on the opposite side of the pad holder from the first nozzle.
- a substrate processing apparatus including a second nozzle arranged in a swing path.
- the support member includes a first support member arranged in a swing path of the pad holder outside the table, and the first support member sandwiching the table.
- a substrate processing apparatus including a second support member arranged in a swing path of the pad holder on the opposite side.
- the present application includes, as an embodiment, a polishing liquid recovery member for recovering the polishing liquid discharged from the discharge path, and the polishing liquid recovery member is an annular portion arranged so as to surround the pad holder.
- a substrate processing apparatus including.
- the present application is, as an embodiment, an installation step for installing a substrate on a table and a pad holder for holding a polishing pad, which is formed at the center of a holding surface for holding the polishing pad.
- a substrate processing method including a rotation step of rotating and a pressing step of pressing a polishing pad held by the pad holder against the substrate.
- the present application is, as an embodiment, a polishing pad in which a through hole communicating with the discharge hole is formed on a polishing surface in contact with a substrate installed on the table, and the through hole and the side surface of the polishing pad are formed.
- a substrate processing method further comprising an attachment step of attaching a polishing pad having a groove forming on the polishing surface to the pad holder.
- the present application discloses, as an embodiment, a substrate processing method in which the groove includes a spiral groove communicating the through hole and the side surface of the polishing pad.
- the present application further includes, as an embodiment, a swing step of swinging the polishing pad in the radial direction of the substrate, and the supply step includes a step of supplying the polishing liquid to the swing path of the pad holder.
- the substrate processing method including.
- the polishing pad swung outward by the swing step is supported by the support member arranged around the table.
- a substrate processing method configured to supply a polishing solution.
- the present application is, as an embodiment, a polishing liquid recovery member, wherein the polishing liquid recovery member includes an annular portion arranged so as to surround the pad holder, and is provided with a polishing liquid recovery member from the discharge path.
- a substrate processing method including a recovery step of recovering the discharged polishing liquid.
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- Engineering & Computer Science (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
テーブル100は、処理対象となる基板WFの被研磨面が鉛直方向の上を向くように基板WFを支持するための部材である。一実施形態において、テーブル100は、基板WFの被研磨面の反対側の裏面を支持するための支持面100aを有し、図示していないモータなどの駆動機構によって回転可能に構成される。支持面100aには複数の穴102が形成されており、テーブル100は、穴102を介して基板WFを真空吸着することができるように構成される。本実施形態の基板処理装置1000は、基板WFの被研磨面を上に向けて基板WFを研磨するフェースアップ式の基板処理装置である。
図3は、一実施形態による多軸アームを概略的に示す斜視図である。図2および図3に示すように、多軸アーム200は、テーブル100に支持された基板WFに対して各種処理を行うための複数の処理具を保持する部材であり、テーブル100に隣接して配置される。本実施形態の多軸アーム200は、基板WFを研磨するための大径の研磨パッド222と、基板WFを洗浄するための洗浄具232と、基板WFを仕上げ研磨するための小径の研磨パッド242と、基板WFの直径を計測するための撮影部材(カメラ)252と、を保持するように構成される。
図1および図2に示すように、基板処理装置1000は、テーブル100の外側の研磨パッド222の揺動経路に配置された第1の支持部材300Aと、テーブル100を挟んで第1の支持部材300Aと反対側の研磨パッド222の揺動経路に配置された第2の支持部材300Bと、を含む。第1の支持部材300Aおよび第2の支持部材300Bは、基板WFを挟んで線対称になっている。このため、以下では、適宜、第1の支持部材300Aおよび第2の支持部材300Bをまとめて支持部材300として説明する。また、以下では、一例として、大径の研磨パッド222を基板WFに対して揺動させる場合の支持部材300の機能について説明を行うが、洗浄具232または小径の研磨パッド242についても同様である。
図1および図2に示すように、基板処理装置1000は、基板WFを研磨しながら基板WFの被研磨面の膜厚プロファイルを計測するための膜厚計測器600を含む。膜厚計測器600は、渦電流式センサまたは光学式センサなどの様々なセンサで構成することができる。図1に示すように、高さ方向に伸びる回転シャフト610がテーブル100に隣接して配置されている。回転シャフト610は、図示していないモータなどの回転駆動機構によって回転シャフト610の軸周りに回転可能になっている。回転シャフト610には揺動アーム620が取り付けられおり、膜厚計測器600は、揺動アーム620の先端に取り付けられている。膜厚計測器600は、回転シャフト610の回転によって回転シャフト610の軸周りに旋回揺動するように構成される。具体的には、膜厚計測器600は、基板WFの研磨中に、回転シャフト610の回転によって基板WFの径方向に沿って揺動することができるようになっている。膜厚計測器600は、研磨パッド222が基板WF上を揺動しているときには基板WF上から退避した位置に揺動し、研磨パッド222が基板WF上を揺動していないときに基板WF上を揺動するように構成される。すなわち、膜厚計測器600は、基板WF上を揺動する研磨パッド222と干渉しないタイミングで基板WF上を揺動することができるようになっており、研磨パッド222によって研磨される基板WFの膜厚プロファイルを経時的に計測することができる。膜厚計測器600は、計測した基板WFの膜厚プロファイルが所望の膜厚プロファイルになったら、基板WFの研磨の終点を検出することができる。
図1および図2に示すように、ドレッサ500は、揺動シャフト210の回転による研磨パッド222、242の旋回経路に配置される。ドレッサ500は、表面にダイヤモンド粒子などが強固に電着しており、研磨パッド222、242を目立て(ドレッシング)するための部材である。ドレッサ500は、図示していないモータなどの回転駆動機構によって回転するように構成される。ドレッサ500の表面には図示していないノズルから純水を供給可能になっている。基板処理装置1000は、ノズルから純水をドレッサ500に供給しながらドレッサ500を回転させるとともに、研磨パッド222、242を回転させ、ドレッサ500に押圧しながらドレッサ500に対して揺動させる。これによって、ドレッサ500により研磨パッド222、242が削り取られ、研磨パッド222、242の研磨面がドレッシングされる。
図4は、一実施形態によるパッドホルダを概略的に示す斜視図である。図5は、一実施形態によるパッドホルダを概略的に示す断面図である。以下、パッドホルダ226の構成を説明するが、パッドホルダ246も同様の構成を有する。
次に、本実施形態による基板処理方法の手順を説明する。図8は、一実施形態による基板処理方法のフローチャートである。図8に示すように、基板処理方法は、まず、研磨パッド222をパッドホルダ226に取り付ける(取り付けステップS100)。本実施形態の基板処理方法では、図7に示すように、研磨面222cの中央に貫通穴222bが形成され、かつ、貫通穴222bと研磨パッド222の側面とを連通する螺旋状の溝222aが研磨面222cに形成された研磨パッド222が用いられる。また、本実施形態の基板処理方法では、図5に示すように、保持面221-2cの中央部に排出穴221-2aが形成され、かつ、排出穴221-2aからパッドホルダ226の外部に連通する排出路221-2bが形成されたパッドホルダ226が用いられる。
前記揺動機構によって前記テーブルの外側へ揺動された研磨パッドを支持するための支持部材と、基板処理装置を開示する。
200 多軸アーム
221-1 第1のホルダ本体
221-2 第2のホルダ本体
221-2a 排出穴
221-2b 排出路
221-2c 保持面
222 研磨パッド
222a 螺旋状の溝
222b 貫通穴
222c 研磨面
226 パッドホルダ
227 昇降機構
228 ノズル
228-1 第1のノズル
228-2 第2のノズル
229 パッド回転機構
270 研磨液回収部材
300 支持部材
300A 第1の支持部材
300B 第2の支持部材
301a,301b 支持面
1000 基板処理装置
WF 基板
Claims (16)
- 基板を支持するためのテーブルと、
前記テーブルに支持された基板を研磨するための研磨パッドを保持するためのパッドホルダと、
前記パッドホルダの周囲に研磨液を供給するためのノズルと、
前記パッドホルダを回転させるためのパッド回転機構と、
を含み、
前記パッドホルダは、前記研磨パッドを保持する保持面の中央部に形成された排出穴と、前記排出穴から前記パッドホルダの外部に連通する排出路と、を有する、
基板処理装置。 - 前記排出路は、前記排出穴と前記パッドホルダの側面とを連通するように前記パッドホルダに形成される、
請求項1に記載の基板処理装置。 - 前記排出路は、前記排出穴から放射状に伸びて前記パッドホルダの側面の複数個所に開口するように前記パッドホルダに形成される、
請求項2に記載の基板処理装置。 - 前記排出穴は、丸穴であり、
前記排出路は、前記パッドホルダを平面視したときに前記排出穴から前記排出穴の接線方向に延びて前記パッドホルダの側面の複数個所に開口するように前記パッドホルダに形成される、
請求項2または3に記載の基板処理装置。 - 前記パッドホルダは、前記テーブルに支持された基板に接触する研磨面に前記排出穴と連通する貫通穴が形成された研磨パッドであって、前記貫通穴と前記研磨パッドの側面とを連通する溝が前記研磨面に形成された研磨パッドを保持するように構成される、
請求項1から4のいずれか一項に記載の基板処理装置。 - 前記溝は、前記貫通穴と前記研磨パッドの側面とを連通する螺旋状の溝を含む、
請求項5に記載の基板処理装置。 - 前記パッドホルダを前記基板の径方向に揺動させるための揺動機構と、
前記揺動機構によって前記テーブルの外側へ揺動された研磨パッドを支持するための支持部材と、
をさらに含む、
請求項1から6のいずれか一項に記載の基板処理装置。 - 前記ノズルは、前記パッドホルダの揺動経路に配置された第1のノズルと、前記パッドホルダを挟んで前記第1のノズルと反対側の前記パッドホルダの揺動経路に配置された第2のノズルと、を含む、
請求項7に記載の基板処理装置。 - 前記支持部材は、前記テーブルの外側の前記パッドホルダの揺動経路に配置された第1の支持部材と、前記テーブルを挟んで前記第1の支持部材と反対側の前記パッドホルダの揺動経路に配置された第2の支持部材と、を含む、
請求項7または8に記載の基板処理装置。 - 前記排出路から排出された研磨液を回収するための研磨液回収部材を含み、
前記研磨液回収部材は、前記パッドホルダを囲うように配置された環状部分を含む、
請求項1から9のいずれか一項に記載の基板処理装置。 - テーブルに基板を設置する設置ステップと、
研磨パッドを保持するためのパッドホルダであって、前記研磨パッドを保持するための保持面の中央部に形成された排出穴と、前記排出穴から前記パッドホルダの外部に連通する排出路と、を有する、パッドホルダの周囲に配置されたノズルから研磨液を供給する供給ステップと、
前記パッドホルダを回転させる回転ステップと、
前記パッドホルダに保持された研磨パッドを前記基板に押圧する押圧ステップと、
を含む、基板処理方法。 - 前記テーブルに設置された基板に接触する研磨面に前記排出穴と連通する貫通穴が形成された研磨パッドであって、前記貫通穴と前記研磨パッドの側面とを連通する溝が前記研磨面に形成された研磨パッドを前記パッドホルダに取り付ける取り付けステップをさらに含む、
請求項11に記載の基板処理方法。 - 前記溝は、前記貫通穴と前記研磨パッドの側面とを連通する螺旋状の溝を含む、
請求項12に記載の基板処理方法。 - 前記研磨パッドを前記基板の径方向に揺動させる揺動ステップをさらに含み、
前記供給ステップは、前記パッドホルダの揺動経路に研磨液を供給するステップを含む、
請求項11から13のいずれか一項に記載の基板処理方法。 - 前記供給ステップは、前記揺動ステップによって前記テーブルの外側へ揺動された研磨パッドが、前記テーブルの周囲に配置された支持部材に支持されているときに研磨液を供給するように構成される、
請求項14に記載の基板処理方法。 - 研磨液回収部材であって、前記研磨液回収部材は、前記パッドホルダを囲うように配置された環状部分を含む、研磨液回収部材により、前記排出路から排出された研磨液を回収する回収ステップを含む、
請求項11から15のいずれか一項に記載の基板処理方法。
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| KR1020237021159A KR20230127998A (ko) | 2021-01-08 | 2021-11-09 | 기판 처리 장치 및 기판 처리 방법 |
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- 2021-11-09 US US18/257,898 patent/US12569957B2/en active Active
- 2021-11-09 WO PCT/JP2021/041139 patent/WO2022149346A1/ja not_active Ceased
- 2021-11-09 CN CN202180089767.4A patent/CN116745068B/zh active Active
- 2021-11-09 JP JP2022573931A patent/JP7625015B2/ja active Active
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2022
- 2022-01-03 TW TW111100026A patent/TW202237337A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1015823A (ja) * | 1996-07-04 | 1998-01-20 | Canon Inc | 化学機械研磨装置における研磨スラリー供給方法および装置 |
| JP2000158331A (ja) * | 1997-12-10 | 2000-06-13 | Canon Inc | 基板の精密研磨方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12569957B2 (en) | 2026-03-10 |
| JPWO2022149346A1 (ja) | 2022-07-14 |
| CN116745068A (zh) | 2023-09-12 |
| TW202237337A (zh) | 2022-10-01 |
| CN116745068B (zh) | 2025-07-22 |
| US20240051080A1 (en) | 2024-02-15 |
| KR20230127998A (ko) | 2023-09-01 |
| JP7625015B2 (ja) | 2025-01-31 |
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