WO2022145320A1 - Circuit haute fréquence - Google Patents

Circuit haute fréquence Download PDF

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Publication number
WO2022145320A1
WO2022145320A1 PCT/JP2021/047684 JP2021047684W WO2022145320A1 WO 2022145320 A1 WO2022145320 A1 WO 2022145320A1 JP 2021047684 W JP2021047684 W JP 2021047684W WO 2022145320 A1 WO2022145320 A1 WO 2022145320A1
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WO
WIPO (PCT)
Prior art keywords
filter element
switch
filter
high frequency
input terminal
Prior art date
Application number
PCT/JP2021/047684
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English (en)
Japanese (ja)
Inventor
圭亮 有馬
琢真 黒▲柳▼
広幸 可児
基嗣 津田
Original Assignee
株式会社村田製作所
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Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2022145320A1 publication Critical patent/WO2022145320A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving

Definitions

  • This disclosure generally relates to high frequency circuits. More specifically, the present disclosure relates to a high frequency circuit including a plurality of power amplifiers and a plurality of filter elements.
  • Patent Document 1 discloses a high-frequency circuit unit for carrier aggregation that simultaneously uses radio waves of a plurality of bands having different frequencies.
  • the high frequency circuit unit of Patent Document 1 includes a transmission circuit for the first band and a transmission circuit for the second band.
  • Each of the transmission circuit for the first band and the transmission circuit for the second band includes a high frequency power amplifier, an antenna duplexer, and a switch.
  • the antenna duplexer is a filter composed of a low-pass filter that passes a transmission signal and a high-pass filter that passes a reception signal.
  • Patent Document 1 when both the high frequency power amplifier of the transmission circuit for the first band and the high frequency power amplifier of the transmission circuit for the second band are used at the same time, the antenna duplexer of the transmission circuit for the first band (High frequency signals may leak between the filter element) and the antenna duplexer (filter element) of the transmission circuit for the second band. That is, when different power amplifiers are used at the same time, high frequency signal leakage may occur between the filter elements connected to the different power amplifiers.
  • the present disclosure provides a high frequency circuit capable of improving isolation between filter elements connected to different power amplifiers.
  • One aspect of the present disclosure is a high frequency circuit, the first power amplifier and the second power amplifier that can be used simultaneously, and the first filter element and the second filter connected to the first power amplifier and the second power amplifier, respectively.
  • the element a module board having a first main surface and a second main surface facing each other and in which a first filter element, a second filter element, a first power amplifier, and a second power amplifier are arranged, is connected to the ground. It is provided with a metal member to be used.
  • the first filter element and the second filter element are arranged on the first main surface of the module substrate.
  • the metal member is located between the first filter element and the second filter element when the module substrate is viewed in a plan view.
  • aspects of the present disclosure can improve isolation between filter elements connected to different power amplifiers.
  • Circuit diagram of a configuration example of a communication device including a high frequency circuit according to the first embodiment Top view of the configuration example of the high frequency circuit of FIG. FIG. 2 is a sectional view taken along line AA.
  • Top view of the configuration example of the high frequency circuit according to the second embodiment BB line sectional view of FIG.
  • Circuit diagram of a configuration example of a communication device including a high frequency circuit according to the fifth embodiment Plan view of the configuration example of the high frequency circuit of FIG. FIG. 10 is a sectional view taken along line CC.
  • the positional relationship such as up, down, left, and right shall be based on the positional relationship shown in the drawing.
  • Each figure described in the following embodiment is a schematic view, and the ratio of the size and the thickness of each component in each figure does not necessarily reflect the actual dimensional ratio. do not have. Further, the dimensional ratio of each element is not limited to the ratio shown in the drawings.
  • a is placed between B and C” and "A is located between B and C” mean any point in B and any point in C. It means that at least one of the plurality of line segments connecting the points passes through A.
  • a and B are connected to C and D, respectively” and similar expressions mean “A is connected to C and B is connected to D", and “A and B are connected to D”. It does not mean that B is connected to C and A and B are connected to D.
  • a plurality of A's are connected to a plurality of C's respectively” and similar expressions mean that "A and C are connected in a one-to-one correspondence".
  • connection includes not only the case of being directly connected by a connection terminal and / or a wiring conductor, but also the case of being electrically connected via other circuit components. Further, “connected between A and B” means that both A and B are connected between A and B.
  • FIG. 1 is a circuit diagram of a configuration example of a communication device 1 including a high frequency circuit 10 according to the first embodiment.
  • the high frequency circuit 10 is used, for example, in a high frequency front-end circuit of a mobile communication device (for example, a mobile phone or the like) that supports multi-band and simultaneous use of two frequency bands (for example, carrier aggregation).
  • the high frequency circuit 10 can, for example, support carrier aggregation between a midband of a 2G (second generation mobile communication) standard and a low band of a 4G (fourth generation mobile communication) standard, but is not limited to this.
  • the high frequency circuit 10 may be capable of supporting dual connectivity between a 2G standard midband and a 5G (fifth generation mobile communication) standard lowband.
  • the 2G standard is, for example, a GSM (registered trademark) standard (GSM: Global System for Mobile Communications).
  • the 4G standard is, for example, a 3GPP LTE standard (LTE: LongTermEvolution).
  • the 5G standard is, for example, 5G NR (New Radio).
  • the communication device 1 can support carrier aggregation (uplink carrier aggregation) in which a plurality of frequency bands (two in the first embodiment) are used simultaneously in the uplink.
  • the communication device 1 may be capable of supporting the above-mentioned dual connectivity instead of carrier aggregation.
  • the communication device 1 shown in FIG. 1 includes a high frequency circuit 10, a signal processing circuit 11, and an antenna element 12.
  • the high frequency circuit 10 is connected between the signal processing circuit 11 and the antenna element 12.
  • the high frequency circuit 10 transmits the high frequency signal from the signal processing circuit 11 to the antenna element 12.
  • FIG. 2 is a plan view of a configuration example of the high frequency circuit 10
  • FIG. 3 is a sectional view taken along line AA of FIG.
  • the high-frequency circuit 10 includes a first power amplifier 21, a second power amplifier 22, a first filter element 31, a second filter element 32, a module substrate 70, and a metal member 8. Be prepared.
  • the first power amplifier 21 and the second power amplifier 22 can be used at the same time.
  • the first filter element 31 and the second filter element 32 are connected to the first power amplifier 21 and the second power amplifier 22, respectively.
  • the module substrate 70 has a first main surface 70a and a second main surface 70b facing each other.
  • the first filter element 31, the second filter element 32, the first power amplifier 21, and the second power amplifier 22 are arranged on the module board 70.
  • the metal member 8 is connected to the ground.
  • the first filter element 31 and the second filter element 32 are arranged on the first main surface 70a of the module substrate 70. As shown in FIG. 2, the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view.
  • the high frequency circuit 10 includes the metal member 8 connected to the ground. As shown in FIG. 2, the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. Therefore, in the high frequency circuit 10 of the present embodiment, the isolation between the filters (first filter element 31 and second filter element 32) connected to different power amplifiers (first power amplifier 21 and second power amplifier 22), respectively. The ratio can be improved. In particular, when different power amplifiers (first power amplifier 21 and second power amplifier 22) are used at the same time, high frequency signal leakage may occur between the filters (first filter element 31 and second filter element 32). Can be reduced.
  • the communication device 1 includes a high frequency circuit 10, a signal processing circuit 11, and an antenna element 12.
  • the high frequency circuit 10 is connected between the signal processing circuit 11 and the antenna element 12.
  • the high frequency circuit 10 transmits the high frequency signal from the signal processing circuit 11 to the antenna element 12.
  • the high-frequency circuit 10 includes a first power amplifier 21, a second power amplifier 22, a first filter element 31, a second filter element 32, a switch integrated circuit 4, and a first matching circuit.
  • a 51, a second matching circuit 52, and an antenna switch 6 are provided.
  • the high frequency circuit 10 includes a module substrate 70, a metal member 8, and a protective member 9.
  • the first power amplifier 21 and the second power amplifier 22 are connected to the signal processing circuit 11 in parallel.
  • the first power amplifier 21 and the second power amplifier 22 can be used at the same time.
  • a transmission path passing through a first power amplifier 21 and a first filter element 31 and a second power amplifier 22 and a second power amplifier 22 and a second power amplifier 22 are provided between the signal processing circuit 11 and the antenna element 12. It has two transmission paths, one is a transmission path through the filter element 32. Therefore, the fact that the first power amplifier 21 and the second power amplifier 22 can be used at the same time means that two high-frequency signals can be transmitted at the same time by using these two transmission paths at the same time. Thereby, the high frequency circuit 10 can support carrier aggregation or dual connectivity.
  • the first power amplifier 21 has an input terminal and an output terminal.
  • the first power amplifier 21 amplifies the first transmission signal in the first frequency band input from the input terminal, and outputs the amplified first transmission signal from the output terminal.
  • the input terminal of the first power amplifier 21 is connected to the signal processing circuit 11.
  • the first power amplifier 21 can amplify a high frequency signal (first transmission signal) in the first frequency band.
  • the first frequency band includes, for example, n77 / n78 of the NR band (NR operating band) in the 5G standard.
  • Each of the uplink frequency band (Uplink frequency range) and the downlink frequency band (Downlink frequency range) of n77 is 3300 MHz to 4200 MHz.
  • Each of the uplink frequency band and the downlink frequency band of n78 is 3300 MHz-3800 MHz.
  • the first frequency band includes a band 42 (B42) / band 43 (B43) of the 3GPP LTE (Long Term Evolution) standard.
  • the downlink frequency band of the band 42 is 3400 MHz to 3600 MHz.
  • the downlink frequency band of the band 43 is 3600 MHz to 3800 MHz.
  • the second power amplifier 22 has an input terminal and an output terminal.
  • the second power amplifier 22 amplifies the second transmission signal in the second frequency band input from the input terminal, and outputs the amplified second transmission signal from the output terminal.
  • the input terminal of the second power amplifier 22 is connected to the signal processing circuit 11.
  • the second power amplifier 22 can amplify a high frequency signal (second transmission signal) in the second frequency band.
  • the second frequency band is a frequency band different from the first frequency band. That is, the second power amplifier 22 amplifies the second transmission signal in the second frequency band different from the first frequency band.
  • the second frequency band is on the higher frequency side than the first frequency band.
  • the second frequency band includes, for example, n79 of the NR band in the 5G standard.
  • Each of the uplink frequency band and the downlink frequency band of n79 is 4400 MHz to 5000 MHz.
  • the first filter element 31 and the second filter element 32 are connected to the first power amplifier 21 and the second power amplifier 22, respectively. More specifically, the first filter element 31 and the second filter element 32 are connected to the output terminals of the first power amplifier 21 and the second power amplifier 22, respectively.
  • the first filter element 31 is provided between the first power amplifier 21 and the antenna switch 6 in terms of an electric circuit.
  • the first filter element 31 passes a signal (first transmission signal) in the first pass band including the first frequency band.
  • the first filter element 31 is, for example, a bandpass filter.
  • the first filter element 31 passes a signal in the first pass band (first transmission signal) and attenuates signals other than the first pass band.
  • the second filter element 32 is provided between the second power amplifier 22 and the antenna switch 6 in terms of an electric circuit.
  • the second filter element 32 passes a signal (second transmission signal) in the second pass band including the second frequency band. That is, the second filter element 32 passes a signal in the second pass band including the second frequency band and different from the first pass band.
  • the second filter element 32 is, for example, a bandpass filter.
  • the second filter element 32 passes a signal in the second pass band (second transmission signal) and attenuates a signal other than the second pass band.
  • the first filter element 31 and the second filter element 32 are electronic components that can be mounted on the module board 70.
  • the first filter element 31 and the second filter element 32 are, for example, elastic wave filters.
  • Examples of the surface acoustic wave filter include a SAW (Surface Acoustic Wave) filter and a BAW (Bulk Acoustic Wave) filter.
  • the first filter element 31 and the second filter element 32 are SAW filters.
  • the first filter element 31 is composed of a first substrate 310.
  • the second filter element 32 is composed of a second substrate 320. That is, the first filter element 31 and the second filter element 32 are configured by using separate first substrate 310 and second substrate 320.
  • the first substrate 310 and the second substrate 320 are, for example, piezoelectric substrates including a piezoelectric layer.
  • the first substrate 310 and the second substrate 320 have a rectangular plate shape.
  • the first filter element 31 includes a first filter input terminal 311, a first filter output terminal 312, and two ground terminals 313.
  • the first filter input terminal 311 and the first filter output terminal 312 and the two ground terminals 313 are arranged at the four corners of one surface of the first substrate 310.
  • the set of the first filter input terminal 311 and the first filter output terminal 312 is on the shield portion 80 side, and the set of the two ground terminals 313 is on the opposite side of the shield portion 80.
  • the first filter element 31 includes a filter element 314.
  • the filter element 314 passes a signal (first transmission signal) in the first pass band including the first frequency band.
  • the first filter input terminal 311 is connected to the input side of the filter element 314.
  • the first filter output terminal 312 is connected to the output side of the filter element 314.
  • the filter element 314 includes, for example, an IDT (Interdigital Transducer) electrode.
  • the second filter element 32 includes a second filter input terminal 321, a second filter output terminal 322, and two ground terminals 323.
  • the second filter input terminal 321 and the second filter output terminal 322 and the two ground terminals 323 are arranged at the four corners of one surface of the second substrate 320.
  • the set of the second filter input terminal 321 and the second filter output terminal 322 is on the shield portion 80 side, and the set of the two ground terminals 323 is on the opposite side of the shield portion 80.
  • the second filter element 32 includes a filter element 324.
  • the filter element 324 passes a signal (second transmission signal) in the second pass band including the second frequency band.
  • the second filter input terminal 321 is connected to the input side of the filter element 324.
  • the second filter output terminal 322 is connected to the output side of the filter element 324.
  • the filter element 324 includes, for example, an IDT electrode.
  • the switch integrated circuit 4 is composed of a semiconductor substrate 40.
  • the switch integrated circuit 4 includes a first switch 41 and a second switch 42.
  • the first switch 41 and the second switch 42 are integrated on one chip.
  • the semiconductor substrate 40 is, for example, a silicon substrate.
  • the first switch 41 is provided between the first power amplifier 21 and the first filter element 31 in terms of an electric circuit.
  • the first switch 41 is inserted between the first filter input terminal 311 of the first filter element 31 and the first power amplifier 21.
  • the first switch 41 includes a first switch input terminal 411 and a first switch output terminal 412.
  • the first switch 41 opens and closes an electric circuit between the first switch input terminal 411 and the first switch output terminal 412.
  • the first switch input terminal 411 is connected to the output terminal of the first power amplifier 21.
  • the first switch output terminal 412 is connected to the first filter input terminal 311 of the first filter element 31.
  • the second switch 42 is provided between the second power amplifier 22 and the second filter element 32 in terms of an electric circuit.
  • the second switch 42 is inserted between the second filter input terminal 321 of the second filter element 32 and the second power amplifier 22.
  • the second switch 42 includes a second switch input terminal 421 and a second switch output terminal 422.
  • the second switch 42 opens and closes an electric circuit between the second switch input terminal 421 and the second switch output terminal 422.
  • the second switch input terminal 421 is connected to the output terminal of the second power amplifier 22.
  • the second switch output terminal 422 is connected to the second filter input terminal 321 of the second filter element 32.
  • the switch integrated circuit 4 may include a control circuit for controlling the first power amplifier 21 and the second power amplifier 22.
  • the first matching circuit 51 and the second matching circuit 52 are electrically provided between the first power amplifier 21 and the second power amplifier 22 and the first filter element 31 and the second filter element 32, respectively. More specifically, the first matching circuit 51 and the second matching circuit 52 are electrically provided between the first power amplifier 21 and the second power amplifier 22 and the first switch 41 and the second switch 42, respectively. Will be.
  • the first matching circuit 51 is provided for impedance matching between the first power amplifier 21 and the first filter element 31.
  • the second matching circuit 52 is provided for impedance matching between the second power amplifier 22 and the second filter element 32.
  • the first matching circuit 51 and the second matching circuit 52 include, for example, at least one of one or more inductors (coils, transformers, etc.) and one or more capacitors.
  • the antenna switch 6 is provided to change the connection relationship between the first filter element 31 and the second filter element 32 and the antenna element 12.
  • the antenna switch 6 includes a first filter side terminal 611, a second filter side terminal 612, a first antenna side terminal 621, and a second antenna side terminal 622.
  • the first filter side terminal 611 is connected to the first switch output terminal 412 of the first switch 41.
  • the second filter side terminal 612 is connected to the second switch output terminal 422 of the second switch 42.
  • the first antenna side terminal 621 is connected to the first antenna 121 of the antenna element 12.
  • the second antenna side terminal 622 is connected to the second antenna 122 of the antenna element 12.
  • the antenna switch 6 may be provided with one or more low noise amplifiers, if necessary.
  • the module board 70 is used for mounting and electrical connection of electronic components (circuit components) constituting the high frequency circuit 10.
  • the module substrate 70 is, for example, a low temperature co-fired ceramics (LTCC) substrate having a laminated structure of a plurality of dielectric layers, a high temperature co-fired ceramics (HTCC) substrate, and parts.
  • LTCC low temperature co-fired ceramics
  • HTCC high temperature co-fired ceramics
  • RDL redistribution layer
  • the module substrate 70 has a rectangular plate shape.
  • the module substrate 70 has a first main surface 70a and a second main surface 70b facing each other.
  • the first main surface 70a and the second main surface 70b are surfaces on both sides of the module substrate 70 in the thickness direction.
  • the module board 70 includes a first power amplifier 21, a second power amplifier 22, a first filter element 31, a second filter element 32, a switch integrated circuit 4, and a first matching.
  • the circuit 51, the second matching circuit 52, and the antenna switch 6 are arranged.
  • the first power amplifier 21 and the second power amplifier 22 are arranged on the first main surface 70a of the module board 70.
  • the first matching circuit 51 and the second matching circuit 52 are arranged on the first main surface 70a of the module board 70.
  • the first filter element 31 and the second filter element 32 are arranged on the first main surface 70a of the module substrate 70.
  • the switch integrated circuit 4 is arranged on the second main surface 70b of the module board 70.
  • the antenna switch 6 is arranged on the second main surface 70b of the module board 70.
  • the first filter element 31 and the second filter element 32 are arranged side by side on the first main surface 70a of the module substrate 70.
  • the first filter input terminal 311 and the first filter output terminal 312 are located closer to the second filter element 32 than the ground terminal 313.
  • the second filter input terminal 321 and the second filter output terminal 322 are located closer to the first filter element 31 than the ground terminal 323.
  • the first filter input terminal 311 of the first filter element 31, the first filter output terminal 312, and the two ground terminals 313 each use the metal bump 74 as the first main of the module board 70. It is fixed to the surface 70a.
  • the second filter input terminal 321 of the second filter element 32, the second filter output terminal 322, and the two ground terminals 323 are each the first main of the module board 70 using the metal bump 74. It is fixed to the surface 70a.
  • the switch integrated circuit 4 is arranged on the second main surface 70b of the module board 70 so as to overlap the first filter element 31 and the second filter element 32 in the plan view of the module board 70. .. More specifically, the switch integrated circuit 4 is arranged so that there is an overlapping region R1 in which the first switch 41 and the first filter element 31 overlap when the module substrate 70 is viewed in a plan view. That is, the first switch 41 and the first filter element 31 overlap when the module substrate 70 is viewed in a plan view.
  • the first filter input terminal 311 is located in the overlapping region R1 where the first switch 41 and the first filter element 31 overlap when the module substrate 70 is viewed in a plan view.
  • the first filter input terminal 311 overlaps with the first switch 41 and the first filter element 31 when the module board 70 is viewed in a plan view.
  • the switch integrated circuit 4 is arranged so that there is an overlapping region R2 in which the second switch 42 and the second filter element 32 overlap when the module substrate 70 is viewed in a plan view. That is, the second switch 42 and the second filter element 32 overlap when the module substrate 70 is viewed in a plan view.
  • the second filter input terminal 321 is located in the overlapping region R2 where the second switch 42 and the second filter element 32 overlap when the module substrate 70 is viewed in a plan view.
  • the second filter input terminal 321 overlaps with the second switch 42 and the second filter element 32 when the module board 70 is viewed in a plan view.
  • the first switch input terminal 411, the first switch output terminal 412, the second switch input terminal 421, and the second switch output terminal 422 of the switch integrated circuit 4 are modules using metal bumps 74, respectively. It is fixed to the second main surface 70b of the substrate 70.
  • the metal bump 74 is, for example, a solder bump, a gold bump, or the like.
  • the first switch output terminal 412 of the first switch 41 is connected to the first filter input terminal 311 of the first filter element 31 via the first connection wiring 731 provided inside the module board 70. , Will be connected.
  • the first filter input terminal 311 is located in the overlapping region R1 where the first switch 41 and the first filter element 31 overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the first connection wiring 731 can be shortened. Therefore, the loss of the high frequency signal between the first switch 41 and the first filter element 31 can be reduced.
  • the second switch output terminal 422 of the second switch 42 is connected to the second filter input terminal 321 of the second filter element 32 via the second connection wiring 732 provided inside the module board 70. , Will be connected.
  • the second filter input terminal 321 is located in the overlapping region R2 where the second switch 42 and the second filter element 32 overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the second connection wiring 732 can be shortened. Therefore, the loss of the high frequency signal between the second switch 42 and the second filter element 32 can be reduced.
  • the module board 70 includes a first circuit connection terminal 711 and a second circuit connection terminal 712.
  • the first circuit connection terminal 711 and the second circuit connection terminal 712 are used for electrical connection of the high frequency circuit 10 to the signal processing circuit 11. As shown in FIG. 2, the first circuit connection terminal 711 is connected to the input terminal of the first power amplifier 21.
  • the second circuit connection terminal 712 is connected to the input terminal of the second power amplifier 22.
  • the module board 70 includes a first antenna connection terminal 721 and a second antenna connection terminal 722.
  • the first antenna connection terminal 721 and the second antenna connection terminal 722 are used for electrical connection to the antenna element 12 of the high frequency circuit 10. As shown in FIG. 1, the first antenna connection terminal 721 is connected to the first antenna 121.
  • the second antenna connection terminal 722 is connected to the second antenna 122.
  • the module board 70 is provided with electronic components 53 and 54.
  • the electronic component 53 is connected between the first filter element 31 and the antenna switch 6.
  • the electronic component 53 is, for example, a matching circuit for impedance matching between the first filter element 31 and the antenna element 12.
  • the electronic component 54 is connected between the second filter element 32 and the antenna switch 6.
  • the electronic component 54 is, for example, a matching circuit for impedance matching between the second filter element 32 and the antenna element 12.
  • the electronic components 53, 54 include, for example, at least one of one or more inductors (coils, transformers, etc.) and one or more capacitors.
  • the electronic components 53 and 54 are, for example, surface mount type electronic components.
  • the electronic components 53 and 54 may be formed of a conductor pattern or the like formed on the module substrate 70 instead of the surface mount type electronic components. In addition, in order to simplify the drawing, the electronic components 53 and 54 are not shown in FIG.
  • the first filter element 31 and the second filter element 32 are covered with the resin member 75.
  • the electronic components first power amplifier 21, second power amplifier 22, first filter element 31, second filter element 32, switch integrated circuit 4, first matching circuit 51
  • the second matching circuit 52, the antenna switch 6, the electronic components 53, 54 are covered with the resin member 75.
  • the resin member 75 covers at least a part of the electronic components mounted on the module substrate 70 and the first main surface 70a and the second main surface 70b of the module substrate 70.
  • the resin member 75 has a function of ensuring reliability such as mechanical strength and moisture resistance of circuit parts.
  • the metal member 8 is arranged on the module substrate 70.
  • arranged on the module substrate 70 it means that the module substrate 70 is directly or indirectly arranged on the first main surface 70a, the second main surface 70b, or the inside.
  • the metal member 8 is connected to the ground.
  • Connected to ground means “connected to ground” at least during the operation of the high frequency circuit 10.
  • the metal member 8 is connected to the ground pattern of the substrate on which the high frequency circuit 10 is mounted. As shown in FIG. 2, the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view.
  • the metal member 8 includes a through-hole wiring 81, a ground electrode 82, and a connecting member 83.
  • the through hole wiring 81, the ground electrode 82, and the connecting member 83 are connected to the ground. That is, the through hole wiring 81, the ground electrode 82, and the connecting member 83 have a ground potential.
  • the through-hole wiring 81, the ground electrode 82, and the connecting member 83 constitute a shield portion 80.
  • the shield portion 80 is located between the first filter element 31 and the second filter element 32 in the metal member 8 without overlapping the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. It is a part. In the present embodiment, the entire metal member 8 is a shield portion 80.
  • the through hole wiring 81 is arranged inside the module board 70. As shown in FIG. 3, the through hole wiring 81 is formed between the first main surface 70a and the second main surface 70b of the module substrate 70. In the present embodiment, the through-hole wiring 81 completely penetrates the module board 70, and both ends are exposed on the first main surface 70a and the second main surface 70b of the module board 70, respectively.
  • the through hole wiring 81 is a through via that penetrates the module substrate 70 in the thickness direction.
  • the through hole wiring 81 is connected to the ground.
  • the through hole wiring 81 is a so-called ground via. As shown in FIG. 2, the through-hole wiring 81 is located over the entire space between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view.
  • the through-hole wiring 81 is located between the first filter input terminal 311 and the second filter input terminal 321 and between the first filter output terminal 312 and the second filter output terminal 322 when the module board 70 is viewed in a plan view. ..
  • the ground electrode 82 is formed in the switch integrated circuit 4 as shown in FIG. As a result, the ground electrode 82 is indirectly arranged on the second main surface 70b of the module substrate 70.
  • the ground electrode 82 is located between the first switch output terminal 412 and the second switch output terminal 422 in the switch integrated circuit 4.
  • the ground electrode 82 is positioned so as to overlap the through-hole wiring 81 when the module substrate 70 is viewed in a plan view.
  • the connecting member 83 is directly arranged on the second main surface 70b of the module board 70.
  • the connecting member 83 is connected to the ground electrode 82.
  • the connecting member 83 connects the through hole wiring 81 and the ground electrode 82.
  • the connecting member 83 is, for example, a metal bump such as a solder bump or a gold bump.
  • the connecting member 83 may have a ball shape, but in the present embodiment, it has a strip shape.
  • the connecting member 83 is in a position where it overlaps with the through-hole wiring 81 when the module substrate 70 is viewed in a plan view. As shown in FIG.
  • the connecting member 83 is located over the entire space between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view, similarly to the through-hole wiring 81. Therefore, the connecting member 83 is located between the first filter input terminal 311 and the second filter input terminal 321 and between the first filter output terminal 312 and the second filter output terminal 322 when the module board 70 is viewed in a plan view.
  • the through hole wiring 81, the ground electrode 82, and the connecting member 83 are connected to each other.
  • the through-hole wiring 81, the ground electrode 82, and the connecting member 83 are connected to the ground as described above.
  • the shield portion 80 is located between the first filter element 31 and the second filter element 32 without overlapping the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. Connected to the ground. Therefore, the isolation between the first filter element 31 and the second filter element 32 can be improved. Therefore, as shown in FIG. 2, even if the first filter input terminal 311 and the first filter output terminal 312 of the first filter element 31 are arranged at the end of the first substrate 310 on the second filter element 32 side.
  • Sufficient isolation can be secured between the first filter element 31 and the second filter element 32.
  • the first filter element 31 and the second filter output terminal 322 of the second filter element 32 are arranged at the ends of the second substrate 320 on the first filter element 31 side, the first filter element 31 and the second filter output terminal 322 can be arranged.
  • Sufficient isolation can be secured between the second filter elements 32.
  • the length of the connection wiring between the first filter element 31 and the first switch 41 can be shortened, and the loss of the high frequency signal between the first switch 41 and the first filter element 31 can be reduced.
  • the length of the connection wiring between the second filter element 32 and the second switch 42 can be shortened, and the loss of the high frequency signal between the second switch 42 and the second filter element 32 can be reduced.
  • the protective member 9 is provided to protect the high frequency circuit 10. As shown in FIG. 3, the protective member 9 includes metal layers 91 and 92. The metal layers 91 and 92 are connected to the ground. For example, the metal layers 91 and 92 are connected to the ground pattern of the substrate on which the high frequency circuit 10 is mounted.
  • the metal layer 91 is arranged on the surface of the resin member 75 so as to be located on the side opposite to the first main surface 70a of the module substrate 70 with respect to the first filter element 31 and the second filter element 32.
  • the metal layer 91 constitutes a top surface portion of the protective member 9. In the present embodiment, the metal layer 91 has a size that covers the entire first main surface 70a of the module substrate 70.
  • the metal layer 92 is formed so as to surround the module substrate 70.
  • the metal layer 92 constitutes a side surface portion of the protective member 9.
  • the metal layers 91 and 92 are formed on the surface of the resin member 75 by, for example, a sputtering technique or a plating technique
  • the high frequency circuit 10 described above is connected between the signal processing circuit 11 and the antenna element 12.
  • the signal processing circuit 11 has a function of outputting a high frequency signal to the high frequency circuit 10.
  • the signal processing circuit 11 includes a baseband signal processing circuit 111 and a high frequency signal processing circuit 112.
  • the baseband signal processing circuit 111 is, for example, a BBIC (Baseband Integrated Circuit).
  • the baseband signal processing circuit 111 processes a signal using an intermediate frequency band having a lower frequency than the high frequency signal propagating in the high frequency circuit 10.
  • the baseband signal processing circuit 111 outputs transmission signals for various data transmissions, such as an image signal for displaying an image and an audio signal for a call, to the high frequency signal processing circuit 112.
  • the high frequency signal processing circuit 112 is, for example, an RFIC (Radio Frequency Integrated Circuit).
  • the high-frequency signal processing circuit 112 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 111, and displays the signal-processed transmission signal (high-frequency signal) in the high-frequency circuit 10. Output to.
  • the high frequency signal processing circuit 112 has a control circuit that outputs a control signal for switching the connection state of the first switch 41 and the second switch 42 of the switch integrated circuit 4 based on the communication band used.
  • the control circuit may be provided outside the high frequency signal processing circuit 112, and may be provided, for example, in the high frequency circuit 10 or the baseband signal processing circuit 111.
  • the antenna element 12 radiates a high frequency signal from the high frequency circuit 10.
  • the antenna element 12 is connected to the high frequency circuit 10, receives a high frequency signal from the high frequency circuit 10, and radiates the received high frequency signal.
  • the antenna element 12 has a first antenna 121 and a second antenna 122.
  • the frequency band in which the first antenna 121 can transmit and receive is the same as the frequency band in which the second antenna 122 can transmit and receive.
  • the frequency band in which the first antenna 121 can transmit and receive may be different from the frequency band in which the second antenna 122 can transmit and receive.
  • MIMO Multiple Input Multiple Output
  • the baseband signal processing circuit 111 outputs, for example, a transmission signal for data transmission to the high frequency signal processing circuit 112.
  • the high-frequency signal processing circuit 112 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 111, and transfers the signal-processed transmission signal (high-frequency signal) to the high-frequency circuit 10. 1 Output to the power amplifier 21 and the second power amplifier 22.
  • the electric circuit between the 1st switch input terminal 411 of the 1st switch 41 and the 1st switch output terminal 412 is closed, and the 2nd switch of the 2nd switch 42 is closed.
  • the electric circuit between the input terminal 421 and the second switch output terminal 422 is closed.
  • the first power amplifier 21 amplifies and outputs the transmission signal from the high frequency signal processing circuit 112.
  • the transmission signal amplified by the first power amplifier 21 is transmitted to the antenna element 12 through the first matching circuit 51, the first switch 41, the first filter element 31, and the antenna switch 6, and is radiated from the antenna element 12.
  • the second power amplifier 22 amplifies and outputs the transmission signal from the high frequency signal processing circuit 112.
  • the transmission signal amplified by the second power amplifier 22 is transmitted to the antenna element 12 through the second matching circuit 52, the second switch 42, the second filter element 32, and the antenna switch 6, and is radiated from the antenna element 12.
  • the high frequency circuit 10 includes a metal member 8.
  • the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view, and is connected to the ground. Therefore, the isolation between the first filter element 31 and the second filter element 32 can be improved. Therefore, even when the first power amplifier 21 and the second power amplifier 22 are used at the same time, the possibility of high frequency signal leakage between the first filter element 31 and the second filter element 32 can be reduced.
  • the high-frequency circuit 10 described above includes a first power amplifier 21 and a second power amplifier 22 that can be used simultaneously, a first filter element 31 and a second filter element 32, a module substrate 70, and a metal member 8.
  • the first filter element 31 and the second filter element 32 are connected to the first power amplifier 21 and the second power amplifier 22, respectively.
  • the module substrate 70 has a first main surface 70a and a second main surface 70b that face each other.
  • the first filter element 31, the second filter element 32, the first power amplifier 21, and the second power amplifier 22 are arranged on the module board 70.
  • the metal member 8 is connected to the ground.
  • the first filter element 31 and the second filter element 32 are arranged on the first main surface 70a of the module substrate 70.
  • the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 connected to the first power amplifier 21 and the second power amplifier 22, respectively, can be improved.
  • the metal member 8 includes a through hole wiring 81 formed between the first main surface 70a and the second main surface 70b of the module substrate 70. According to this configuration, it is possible to improve the isolation between the first filter element 31 and the second filter element 32 connected to the first power amplifier 21 and the second power amplifier 22, respectively, with a simple configuration.
  • the first filter element 31 and the second filter element 32 are the first filter input terminal 311 and the second filter input terminal 321 connected to the first power amplifier 21 and the second power amplifier 22, respectively.
  • the metal member 8 is between the first filter input terminal 311 and the second filter input terminal 321 and the first filter output terminal 312 and the second filter output terminal 322. Located both in between. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved.
  • the high frequency circuit 10 further includes a switch integrated circuit 4 arranged on the module board 70.
  • the switch integrated circuit 4 is inserted between the first filter input terminal 311 and the second filter input terminal 321 of the first filter element 31 and the second filter element 32 and the first power amplifier 21 and the second power amplifier 22, respectively. It has a first switch 41 and a second switch 42. According to this configuration, the filter to be used can be switched, and various communication methods can be supported.
  • the switch integrated circuit 4 is arranged on the second main surface 70b of the module board 70. According to this configuration, miniaturization can be achieved.
  • the metal member 8 includes a ground electrode 82 formed in the switch integrated circuit 4 and a connecting member 83 arranged on the second main surface 70b of the module substrate 70 and connected to the ground electrode 82. include. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved.
  • the first switch 41 and the first filter element 31 overlap when the module substrate 70 is viewed in a plan view. According to this configuration, the length of the connection wiring between the first switch 41 and the first filter element 31 can be shortened, and the loss of the high frequency signal between the first switch 41 and the first filter element 31 can be reduced. ..
  • the first switch 41 is connected to the first switch input terminal 411 connected to the first power amplifier 21 and the first switch output connected to the first filter input terminal 311 of the first filter element 31. It has a terminal 412.
  • the first filter input terminal 311 overlaps with the first switch 41 and the first filter element 31 when the module board 70 is viewed in a plan view. According to this configuration, the length of the connection wiring between the first switch 41 and the first filter element 31 can be shortened, and the loss of the high frequency signal between the first switch 41 and the first filter element 31 can be reduced. ..
  • the second switch 42 and the second filter element 32 overlap when the module substrate 70 is viewed in a plan view. According to this configuration, the length of the connection wiring between the second switch 42 and the second filter element 32 can be shortened, and the loss of the high frequency signal between the second switch 42 and the second filter element 32 can be reduced. ..
  • the second switch 42 has a second switch input terminal 421 connected to the second power amplifier 22 and a second switch output connected to the second filter input terminal 321 of the second filter element 32. It has a terminal 422 and.
  • the second filter input terminal 321 overlaps with the second switch 42 and the second filter element 32 when the module board 70 is viewed in a plan view. According to this configuration, the length of the connection wiring between the second switch 42 and the second filter element 32 can be shortened, and the loss of the high frequency signal between the second switch 42 and the second filter element 32 can be reduced. ..
  • the first power amplifier 21 amplifies the first transmission signal in the first frequency band.
  • the second power amplifier 22 amplifies the second transmission signal in the second frequency band different from the first frequency band.
  • the first filter element 31 passes a signal in the first pass band including the first frequency band.
  • the second filter element 32 passes a signal in a second pass band including the second frequency band and different from the first pass band. According to this configuration, it is possible to support carrier aggregation 2 uplink carrier aggregation in which two frequency bands are used simultaneously in the uplink.
  • FIG. 4 is a plan view of a configuration example of the high frequency circuit 10 according to the second embodiment
  • FIG. 5 is a sectional view taken along line BB of FIG.
  • the high frequency circuit 10 of the second embodiment is different from the high frequency circuit 10 of the first embodiment in the configuration of the metal member 8, particularly the configuration of the shield portion 80.
  • the shield portion 80 of the high frequency circuit 10 of FIG. 4 includes a through hole wiring 81, a ground electrode 82, a connection member 83, and a shield wall 84.
  • the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to the ground.
  • the shield wall 84 is made of metal.
  • the shield wall 84 is formed of, for example, a metal plate.
  • the material of the shield wall 84 is, for example, copper. Copper has a relatively high heat capacity among metals, and can efficiently absorb heat from heat sources such as the first filter element 31 and the second filter element 32, and can improve heat dissipation.
  • the shield wall 84 is arranged on the first main surface 70a of the module substrate 70. In particular, the shield wall 84 overlaps with the through-hole wiring 81 when the module substrate 70 is viewed in a plan view.
  • the height of the shield wall 84 from the first main surface 70a is the height from the first main surface 70a of the first filter element 31 and the height from the first main surface 70a of the second filter element 32. Is above the height of.
  • the height of the shield wall 84 from the first main surface 70a is the portion of the shield wall 84 farthest from the first main surface 70a in the thickness direction of the module substrate 70 (vertical direction in FIG. 5) (shield wall in FIG. 5). It is a dimension between the tip of 84) and the first main surface 70a.
  • the height of the first filter element 31 from the first main surface 70a is the portion of the first filter element 31 farthest from the first main surface 70a in the thickness direction of the module substrate 70 (in FIG.
  • the first filter element 31 It is a dimension between the upper surface) and the first main surface 70a.
  • the height of the second filter element 32 from the first main surface 70a is the portion of the second filter element 32 farthest from the first main surface 70a in the thickness direction of the module substrate 70 (in FIG. 5, the second filter element 32). It is a dimension between the upper surface) and the first main surface 70a.
  • the height of the first filter element 31 and the second filter element 32 from the first main surface 70a includes the height of the metal bump 74 in addition to the height of the first filter element 31 and the second filter element 32 itself. I'm out.
  • the shield wall 84 is electrically connected to the through hole wiring 81 and the metal layer 91.
  • electrically connected means “directly or indirectly contacted and electrically connected”.
  • the base end of the shield wall 84 is in direct contact with the through hole wiring 81.
  • the tip of the shield wall 84 is in direct contact with the metal layer 91. That is, the shield wall 84 is in direct contact with the through-hole wiring 81 and the metal layer 91 and is electrically connected. Since the shield wall 84 is connected to the ground at at least two places, the tip end and the base end, the electromagnetic field shielding function is enhanced.
  • the shield wall 84 is located over the entire space between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. This means that all of the plurality of line segments connecting an arbitrary point in the first filter element 31 and an arbitrary point in the second filter element 32 pass through the shield wall 84. Therefore, the shield wall 84 is located between the first filter input terminal 311 and the second filter input terminal 321 and between the first filter output terminal 312 and the second filter output terminal 322 when the module board 70 is viewed in a plan view. As shown in FIG. 5, in the shield portion 80, the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to each other. The through-hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to the ground as described above.
  • the metal member 8 includes a shield wall 84 arranged on the first main surface 70a of the module substrate 70. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved. Further, in the high frequency circuit 10, the height of the shield wall 84 from the first main surface 70a is the height from the first main surface 70a of the first filter element 31 and the height from the first main surface 70a of the second filter element 32. Is above the height of. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved.
  • a metal layer 91 which is arranged on the surface of the resin member 75 so as to be located on the opposite side to the ground and is connected to the ground is provided.
  • the shield wall 84 is electrically connected to the metal layer 91. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved.
  • FIG. 6 is a cross-sectional view of a configuration example of the high frequency circuit 10 according to the third embodiment.
  • the high frequency circuit 10 of the third embodiment is different from the high frequency circuit 10 of the second embodiment in the configuration of the metal member 8, particularly the configuration of the shield portion 80.
  • the shield portion 80 of the high frequency circuit 10 of FIG. 6 includes a through hole wiring 81, a ground electrode 82, a connection member 83, and a shield wall 84.
  • the ground electrode 82 is a through silicon via (Through-Silicon Via; TSV).
  • the through silicon via is an electrode that penetrates the silicon substrate of the switch integrated circuit 4.
  • the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to each other.
  • the through-hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to the ground as described above.
  • a shield portion 80 serving as a ground potential is provided so as to penetrate the entire high frequency circuit 10. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved. Further, the heat generated by the first filter element 31 and the second filter element 32 can be dissipated to the outside by the shield portion 80. As a result, heat dissipation can be improved. In addition, heat transfer between the first filter element 31 and the second filter element 32 can be suppressed.
  • the ground electrode 82 is a through silicon via of the switch integrated circuit 4. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved.
  • the shield portion 80 includes the through-hole wiring 81 formed between the first main surface 70a and the second main surface 70b of the module board 70, and the first main surface of the module board 70.
  • a shield wall 84 arranged on the surface 70a and electrically connected to the through-hole wiring 81 and electrically connected to the metal layer 91, a ground electrode 82 which is a silicon through electrode of the switch integrated circuit 4, and a module substrate.
  • It includes a connecting member 83 arranged on the second main surface 70b of the 70 and connecting the through-hole wiring 81 and the ground electrode 82. According to this configuration, the isolation between the first filter element 31 and the second filter element 32 can be further improved, and the heat dissipation can be further improved. In addition, heat transfer between the first filter element 31 and the second filter element 32 can be suppressed.
  • FIG. 7 is a cross-sectional view of a configuration example of the high frequency circuit 10 according to the fourth embodiment.
  • the high frequency circuit 10 of the fourth embodiment has a different configuration of the first filter element 31 from the high frequency circuit 10 of the third embodiment.
  • the first power amplifier 21 and the second power amplifier 22 correspond to different power classes.
  • the power class is a classification of the output power of the terminal defined by the maximum output power or the like, and the smaller the value, the higher the power output.
  • the first power amplifier 21 corresponds to the first power class.
  • the second power amplifier 22 corresponds to the second power class.
  • the maximum output power of the first power class is larger than the maximum output power of the second power class.
  • the first power class is a high power class
  • the second power class is a non-high power class.
  • the maximum output power of the high power class is larger than the maximum output power of the non-high power class.
  • the measurement of the maximum output power is performed by a method defined by, for example, 3GPP or the like.
  • the high power class is represented by a numerical value less than a predetermined value.
  • the non-high power class is represented by a numerical value equal to or higher than a predetermined value.
  • the predetermined value for example, 3 can be used.
  • the high power class includes power classes 1, 1.5 and 2, and the non-high power class includes power classes 3 and 4.
  • the first power amplifier 21 corresponds to the output of higher power than the second power amplifier 22. Therefore, the first filter element 31 corresponding to the first power amplifier 21 generates more heat during operation of the high frequency circuit 10 than the second filter element 32 corresponding to the second power amplifier 22. Therefore, as shown in FIG. 7, the first filter element 31 comes into contact with the metal layer 91. As a result, the first filter element 31 is thermally coupled to the metal layer 91. As a result, the heat generated by the first filter element 31 is transferred to the metal layer 91 and dissipated to the outside. In the present embodiment, the first filter element 31 is thermally coupled by being in direct contact with the metal layer 91.
  • the first power amplifier 21 corresponds to the first power class.
  • the second power amplifier 22 corresponds to the second power class.
  • the maximum output power of the first power class is larger than the maximum output power of the second power class.
  • the first filter element 31 comes into contact with the metal layer 91. According to this configuration, heat dissipation can be improved.
  • FIG. 8 is a cross-sectional view of another configuration example of the high frequency circuit 10 according to the fourth embodiment.
  • each of the first filter element 31 and the second filter element 32 comes into contact with the metal layer 91.
  • the heat generated by the first filter element 31 and the second filter element 32 is transferred to the metal layer 91 and dissipated to the outside.
  • the first filter element 31 and the second filter element 32 are thermally coupled by being in direct contact with the metal layer 91.
  • the resin member 75 that seals the first filter element 31 and the second filter element 32, and the first main module substrate 70 with respect to the first filter element 31 and the second filter element 32 As described above, in the high frequency circuit 10, the resin member 75 that seals the first filter element 31 and the second filter element 32, and the first main module substrate 70 with respect to the first filter element 31 and the second filter element 32.
  • a metal layer 91 which is arranged on the surface of the resin member 75 so as to be located on the side opposite to the surface 70a and is connected to the ground is provided.
  • Each of the first filter element 31 and the second filter element 32 comes into contact with the metal layer 91. According to this configuration, heat dissipation can be improved.
  • the first power amplifier 21 and the second power amplifier 22 do not have to correspond to different power classes, and may correspond to the same power class. Further, in FIG. 8, the metal member 8 does not necessarily have to include the shield wall 84.
  • FIG. 9 is a circuit diagram of a configuration example of the communication device 1A including the high frequency circuit 10A according to the fifth embodiment.
  • 10 is a plan view of a configuration example of the high frequency circuit 10A of FIG. 9, and
  • FIG. 11 is a sectional view taken along line CC of FIG.
  • the communication device 1A of FIG. 9 includes a high frequency circuit 10A, a signal processing circuit 11, and an antenna element 12.
  • the high frequency circuit 10A includes a first power amplifier 21, a second power amplifier 22, a first filter element 31A, a second filter element 32A, a switch integrated circuit 4A, and a first matching circuit.
  • a 51, a second matching circuit 52, and an antenna switch 6 are provided.
  • the high frequency circuit 10A includes a module substrate 70, a metal member 8, and a protective member 9.
  • the first filter element 31A and the second filter element 32A are connected to the first power amplifier 21 and the second power amplifier 22, respectively. More specifically, the first filter element 31A and the second filter element 32A are connected to the output terminals of the first power amplifier 21 and the second power amplifier 22, respectively.
  • the first filter element 31A and the second filter element 32A are, for example, elastic wave filters.
  • the first filter element 31A and the second filter element 32A are, for example, SAW filters.
  • the first filter element 31A is composed of a first substrate 310.
  • the second filter element 32A is composed of the second substrate 320. That is, the first filter element 31A and the second filter element 32A are configured by using separate first substrate 310 and second substrate 320.
  • the first substrate 310 and the second substrate 320 are, for example, piezoelectric substrates including a piezoelectric layer. In the present embodiment, the first substrate 310 and the second substrate 320 have a rectangular plate shape.
  • the first filter element 31A includes a plurality of filter elements 314 having different pass bands.
  • the first filter element 31A has a plurality of first filter input terminals 311 corresponding to the plurality of filter elements 314 and a plurality of first filter output terminals 312 corresponding to the plurality of filter elements 314, respectively. And have.
  • the first filter element 31A has two first filter input terminals 311- corresponding to two filter elements 314-1,314-2 and two filter elements 314-1,314-2, respectively. It has 1,311-2 and two first filter output terminals 312-1,312-2 corresponding to the two filter elements 314-1,314-2, respectively.
  • first filter input terminals 311-1 and 311-2 are connected to the input side of the filter elements 314-1,314-2.
  • the first filter output terminals 312-1, 312-2 are connected to the output side of the filter elements 314-1, 314-2.
  • Filter elements 314-1,314-2 include, for example, IDT electrodes.
  • the first filter element 31A includes a first filter input terminal 311-1, 311-2, a first filter output terminal 312-1, 312-2, and two ground terminals 313.
  • the first filter input terminals 311-1 and 311-2 and the first filter output terminals 312-1, 312-2 are arranged at the four corners of one surface of the first substrate 310.
  • the set of the first filter input terminal 311-1 and the first filter output terminal 312-1 is on the shield portion 80 side, and the set of the first filter input terminal 311-2 and the first filter output terminal 312-2 is the shield portion 80. Is on the opposite side.
  • the two ground terminals 313 are located between the first filter input terminal 311-1 and the first filter output terminal 312-1 and between the first filter input terminal 311-2 and the first filter output terminal 312-2, respectively. be.
  • the second filter element 32A includes a plurality of filter elements 324 having different pass bands.
  • the second filter element 32A has a plurality of second filter input terminals 321 corresponding to the plurality of filter elements 324 and a plurality of second filter output terminals 322 corresponding to the plurality of filter elements 324, respectively. And have.
  • the second filter element 32A has two second filter input terminals 321 to correspond to two filter elements 324-1,324-2 and two filter elements 324-1,324-2, respectively. It has 1,321-2 and two second filter output terminals 322-1,322-2 corresponding to the two filter elements 324-1,324-2, respectively.
  • the second filter input terminals 321-1 and 321-2 are connected to the input side of the filter elements 324-1,324-2.
  • the second filter output terminals 322-1, 322-2 are connected to the output side of the filter elements 324-1,324-2.
  • Filter elements 324-1,324-2 include, for example, IDT electrodes.
  • the second filter element 32A includes a second filter input terminal 321-1 and 321-2, a second filter output terminal 322-1,322-2, and two ground terminals 323.
  • the second filter input terminals 321-1, 321-2 and the second filter output terminals 322-1, 322-2 are arranged at the four corners of one surface of the second substrate 320.
  • the set of the second filter input terminal 321-1 and the second filter output terminal 322-1 is on the shield portion 80 side, and the set of the second filter input terminal 321-2 and the second filter output terminal 322-2 is the shield portion 80. Is on the opposite side.
  • the two ground terminals 323 are located between the second filter input terminal 321-1 and the second filter output terminal 322-1 and between the second filter input terminal 321-2 and the second filter output terminal 322-2, respectively. be.
  • the first filter element 31A and the second filter element 32A are arranged side by side on the first main surface 70a of the module substrate 70.
  • the first filter input terminal 311-1 and the first filter output terminal 312-1 are the second filter element 32A rather than the first filter input terminal 311-2 and the first filter output terminal 312-2.
  • the second filter input terminal 321-1 and the second filter output terminal 322-1 are the first filter element 31A rather than the second filter input terminal 321-2 and the second filter output terminal 322-2.
  • the first filter input terminal 311-1, 311-2, the first filter output terminal 312-1, 312-2, and the two ground terminals 313 of the first filter element 31A are modular boards using metal bumps 74, respectively. It is fixed to the first main surface 70a of 70 (see FIG. 11).
  • the second filter input terminal 321-1, 321-2, the second filter output terminal 322-1, 322-2, and the two ground terminals 323 of the second filter element 32A are modular boards using metal bumps 74, respectively. It is fixed to the first main surface 70a of 70 (see FIG. 11).
  • the module board 70 is provided with electronic components 53 to 56.
  • the electronic components 53 and 55 are connected between the filter elements 314-1,314-2 of the first filter element 31 and the antenna switch 6.
  • the electronic components 53 and 55 are, for example, matching circuits for matching the impedance between the filter elements 314-1,314-2 of the first filter element 31 and the antenna element 12.
  • the electronic components 54 and 56 are connected between the filter elements 324-1,324-2 of the second filter element 32 and the antenna switch 6.
  • the electronic components 54 and 56 are, for example, matching circuits for matching the impedance between the filter elements 324-1,324-2 of the second filter element 32 and the antenna element 12.
  • the electronic components 53 to 56 include, for example, at least one of one or more inductors (coils, transformers, etc.) and one or more capacitors.
  • the electronic components 53 to 56 are, for example, surface mount type electronic components.
  • the electronic components 53 to 56 may be formed of a conductor pattern or the like formed on the module substrate 70 instead of the surface mount type electronic components.
  • the illustration of the electronic components 53 to 56 is omitted in FIG.
  • the switch integrated circuit 4A is composed of the semiconductor substrate 40.
  • the switch integrated circuit 4A includes a first switch 41A and a second switch 42A.
  • the first switch 41A and the second switch 42A are integrated on one chip.
  • the semiconductor substrate 40 is, for example, a silicon substrate.
  • the first switch 41A and the second switch 42A are switches (BSSW) for switching the frequency band.
  • the first switch 41A is used to switch the filter element 314 of the first filter element 31A inserted between the first power amplifier 21 and the antenna element 12.
  • the second switch 42A is used to switch the filter element 324 of the second filter element 32A inserted between the second power amplifier 22 and the antenna element 12.
  • the first switch 41A has a first switch input terminal 411 connected to the first power amplifier 21, and a plurality of first switch output terminals 412 connected to a plurality of first filter input terminals 311 of the first filter element 31A, respectively.
  • the first switch input terminal 411 is configured to be connected to any one of the plurality of first switch output terminals 412.
  • the first switch 41A has two first switch output terminals 421-1,421-2 connected to two first filter input terminals 311-1 and 311-2 of the first filter element 31A, respectively.
  • the first switch 41A is configured to connect the first switch input terminal 411 to any one of the two first switch output terminals 421-1, 412-2.
  • the second switch 42A has a second switch input terminal 421 connected to the second power amplifier 22 and a plurality of second switch output terminals 422 connected to a plurality of second filter input terminals 321 of the second filter element 32A, respectively.
  • the second switch input terminal 421 is configured to be connected to any one of the plurality of second switch output terminals 422.
  • the second switch 42A has two second switch output terminals 422-1,422-two connected to the two second filter input terminals 321-1 and 321-2 of the second filter element 32A, respectively.
  • the second switch 42A is configured to connect the second switch input terminal 421 to any one of the two second switch output terminals 422-1,422-2.
  • the switch integrated circuit 4A is arranged on the second main surface 70b of the module substrate 70 so as to overlap the first filter element 31A and the second filter element 32A in the plan view of the module substrate 70. .. More specifically, the switch integrated circuit 4A is arranged so that there is an overlapping region R1 in which the first switch 41A and the first filter element 31A overlap when the module substrate 70 is viewed in a plan view. That is, the first switch 41A and the first filter element 31A overlap when the module substrate 70 is viewed in a plan view. In the present embodiment, the first filter input terminal 311-1 and the first switch output terminal 412-2 overlap region R1 in which the first switch 41A and the first filter element 31A overlap when the module substrate 70 is viewed in a plan view.
  • the first filter input terminal 311-1 and the first switch output terminal 412-2 overlap with the first switch 41A and the first filter element 31A when the module substrate 70 is viewed in a plan view.
  • the switch integrated circuit 4A is arranged so that there is an overlapping region R2 in which the second switch 42A and the second filter element 32A overlap when the module substrate 70 is viewed in a plan view. That is, the second switch 42A and the second filter element 32A overlap when the module substrate 70 is viewed in a plan view.
  • the second filter input terminal 321-1 and the second switch output terminal 422-2 overlap in the overlapping region R2 where the second switch 42A and the second filter element 32A overlap when the module substrate 70 is viewed in a plan view.
  • the second filter input terminal 321-1 and the second switch output terminal 422-2 overlap with the second switch 42A and the second filter element 32A when the module substrate 70 is viewed in a plan view.
  • the first switch input terminal 411, the first switch output terminal 421-1,412-2, the second switch input terminal 421 and the second switch output terminal 422-1,422- of the switch integrated circuit 4A. 2 is fixed to the second main surface 70b of the module substrate 70, respectively, by using the metal bump 74.
  • the metal bump 74 is, for example, a solder bump, a gold bump, or the like.
  • the first switch output terminals 421-1, 412-2 of the first switch 41A are connected to the first filter input terminals 311-1 and 311-2 of the first filter element 31A of the module board 70. They are connected to each other via the first connection wirings 731-1, 731-2 provided inside.
  • the first filter input terminal 311-1 is located in the overlapping region R1 where the first switch 41A and the first filter element 31A overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the first connection wiring 731-1 can be shortened. Therefore, the loss of the high frequency signal between the first switch 41A and the first filter element 31A can be reduced.
  • the first switch output terminal 412-2 is located in the overlapping region R1 where the first switch 41A and the first filter element 31A overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the first connection wiring 731-2 can be shortened. Therefore, the loss of the high frequency signal between the first switch 41A and the first filter element 31A can be reduced.
  • the second switch output terminals 422-1,422-2 of the second switch 42A are connected to the second filter input terminals 321-1 and 321-2 of the second filter element 32A of the module board 70. They are connected via the second connection wiring 732-1, 732-2 provided inside.
  • the second filter input terminal 321-1 is located in the overlapping region R2 where the second switch 42A and the second filter element 32A overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the second connection wiring 732-1 can be shortened. Therefore, the loss of the high frequency signal between the second switch 42A and the second filter element 32A can be reduced.
  • the second switch output terminal 422-2 is located in the overlapping region R2 where the second switch 42A and the second filter element 32A overlap when the module substrate 70 is viewed in a plan view. Therefore, the length of the second connection wiring 732-2 can be shortened. Therefore, the loss of the high frequency signal between the second switch 42A and the second filter element 32A can be reduced.
  • the shield portion 80 in FIG. 11 includes a through hole wiring 81, a ground electrode 82, a connecting member 83, and a shield wall 84.
  • the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to each other.
  • the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 are connected to the ground.
  • a shield portion 80 that serves as a ground potential is provided so as to penetrate the entire high frequency circuit 10. According to this configuration, the isolation between the filter elements 31A and 32A can be further improved. Further, the heat generated by the first filter element 31A and the second filter element 32A can be dissipated to the outside by the shield portion 80. As a result, heat dissipation can be improved. In addition, heat transfer between the first filter element 31A and the second filter element 32A can be suppressed.
  • the baseband signal processing circuit 111 outputs, for example, a transmission signal for data transmission to the high frequency signal processing circuit 112.
  • the high-frequency signal processing circuit 112 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 111, and transfers the signal-processed transmission signal (high-frequency signal) to the high-frequency circuit 10. 1 Output to the power amplifier 21 and the second power amplifier 22.
  • the electric circuit between the first switch input terminal 411 and the first switch output terminal 412-1 of the first switch 41A is closed, and the second switch 42A
  • the electric circuit between the second switch input terminal 421 and the second switch output terminal 422-1 is closed.
  • the first power amplifier 21 amplifies and outputs the transmission signal from the high frequency signal processing circuit 112.
  • the transmission signal amplified by the first power amplifier 21 is transmitted to the antenna element 12 through the first matching circuit 51, the first switch 41A, the filter element 314-1 of the first filter element 31A, and the antenna switch 6. It is radiated from the antenna element 12.
  • the second power amplifier 22 amplifies and outputs the transmission signal from the high frequency signal processing circuit 112.
  • the transmission signal amplified by the second power amplifier 22 is transmitted to the antenna element 12 through the second matching circuit 52, the second switch 42A, the filter element 324-1 of the second filter element 32A, and the antenna switch 6. It is radiated from the antenna element 12.
  • the high frequency circuit 10A includes a metal member 8.
  • the metal member 8 is located between the first filter element 31A and the second filter element 32A when the module substrate 70 is viewed in a plan view, and is connected to the ground. Therefore, the isolation between the filter elements 31A and 32A can be improved. Therefore, even when the first power amplifier 21 and the second power amplifier 22 are used at the same time, it is possible to reduce the possibility that a high frequency signal leaks between the first filter element 31A and the second filter element 32A.
  • the first filter element 31A has a plurality of filter elements 314-1,314-2 having different pass bands and a plurality of first filter elements 314-1,314-2 corresponding to the plurality of filter elements, respectively. It has one filter input terminal 311-1 and 311-2.
  • the first switch 41A has a plurality of first switch input terminals 411 connected to the first power amplifier 21 and a plurality of first filter input terminals 311-1 and 311-2 connected to the first filter element 31A, respectively. It has first switch output terminals 421-1, 412-2, and is configured to connect the first switch input terminal 411 to any one of a plurality of first switch output terminals 421-1, 412-2. To.
  • the first filter input terminal 311-1 and the first switch output terminal 412-1 connected to each other the first filter input terminal 311-1 is located in the overlapping region R1.
  • the first switch output terminal 412-2 is located in the overlapping region R1. According to this configuration, the length of the connection wiring between the first switch 41A and the first filter element 31A can be shortened, and the loss of the high frequency signal between the first switch 41A and the first filter element 31A can be reduced. ..
  • the second filter element 32A has a plurality of filter elements 324-1,324-2 having different pass bands and a plurality of second filter inputs corresponding to the plurality of filter elements 324-1,324-2, respectively. It has terminals 321-1 and 321-2.
  • the second switch 42A has a plurality of second switch input terminals 421 connected to the second power amplifier 22 and a plurality of second filter input terminals 321-1 and 321-2 connected to the second filter element 32A, respectively. It has a second switch output terminal 422-1,422-2, and is configured to connect the second switch input terminal 421 to any one of a plurality of second switch output terminals 422-1,422-2.
  • the second filter input terminal 321-1 and the second switch output terminal 422-1 connected to each other the second filter input terminal 321-1 is located in the overlapping region R2.
  • the second switch output terminal 422-2 is located in the overlapping region R2. According to this configuration, the length of the connection wiring between the second switch 42A and the second filter element 32A can be shortened, and the loss of the high frequency signal between the second switch 42A and the second filter element 32A can be reduced. ..
  • the shield portion 80 includes the through-hole wiring 81 formed between the first main surface 70a and the second main surface 70b of the module board 70 and the first main surface 70a of the module board 70.
  • a shield wall 84 that is arranged in and electrically connected to the through-hole wiring 81 and also electrically connected to the metal layer 91, a ground electrode 82 that is a silicon through electrode of the switch integrated circuit 4, and a module substrate 70. It includes a connecting member 83 arranged on the second main surface 70b and connecting the through-hole wiring 81 and the ground electrode 82.
  • the high frequency circuit 10 may include 3 or more power amplifiers and 3 or more filter elements. In short, the number of power amplifiers and the number of filter elements are not particularly limited as long as they are 2 or more. In one modification, the high frequency circuit 10 does not have to include the switch integrated circuit 4. In one modification, the high frequency circuit 10 may not include the first matching circuit 51, the second matching circuit 52, and the electronic components 53, 54. This point is the same in the high frequency circuit 10A.
  • the structures of the first filter element 31 and the second filter element 32 are not limited to the configuration examples of the first to fourth embodiments.
  • the arrangement of the first filter input terminal 311, the first filter output terminal 312, and the ground terminal 313 of the first filter element 31 is not limited to the illustrated example. This also applies to the second filter element 32.
  • the structures of the first filter element 31A and the second filter element 32A are not limited to the configuration example of the fifth embodiment.
  • the first filter element 31 may indirectly contact the metal layer 91 instead of directly contacting the metal layer 91.
  • the reason why the first filter element 31 is brought into direct contact with the metal layer 91 is to dissipate heat from the first filter element 31, so that the first filter element 31 can dissipate heat.
  • the filter element 31 may be indirectly brought into contact with the metal layer 91.
  • the first filter element 31 may be in contact with the metal layer 91 via a heat transfer member such as a metal plate.
  • the first filter element 31 may be in direct or indirect contact with the metal layer 91 and thermally coupled.
  • the first filter element 31 may not be in direct or indirect contact with the metal layer 91, and may not be thermally coupled to the metal layer 91. This point is the same for the second filter element 32.
  • the structure of the switch integrated circuit 4 is not limited to the configuration examples of the first to fourth embodiments.
  • the arrangement of the first switch input terminal 411, the first switch output terminal 412, the second switch input terminal 421, and the second switch output terminal 422 is not limited to the illustrated example.
  • the structure of the switch integrated circuit 4A is not limited to the configuration example of the fifth embodiment.
  • the first filter input terminal 311 is located in the overlapping region R1.
  • the first switch output terminal 412 may be located in the overlapping region R1, or the first filter input terminal 311 and the first switch output terminal 412 may be located in the overlapping region R1. That is, at least one of the first filter input terminal 311 and the first switch output terminal 412 may overlap with the first switch 41 and the first filter element 31.
  • the switch integrated circuit 4 does not necessarily have to be arranged so that the overlapping region R1 exists.
  • the second filter input terminal 321 is located in the overlapping region R2.
  • the second switch output terminal 422 may be located in the overlapping region R2, or the second filter input terminal 321 and the second switch output terminal 422 may be located in the overlapping region R2. That is, at least one of the second filter input terminal 321 and the second switch output terminal 422 may overlap with the second switch 42 and the second filter element 32.
  • the switch integrated circuit 4 does not necessarily have to be arranged so that the overlapping region R2 exists.
  • the first filter input terminal 311-1 is located in the overlapping region R1.
  • the first switch output terminal 412-1 may be located in the overlapping region R1, and the first filter input terminal 311-1 and the first switch output terminal 412-1 may be located in the overlapping region R1. May be good.
  • the first switch output terminal 412-2 is located in the overlapping region R1.
  • the first filter input terminal 311-2 may be located in the overlapping region R1, and the first filter input terminal 311-2 and the first switch output terminal 412-2 may be located in the overlapping region R1. May be good.
  • the second filter input terminal 321-1 is located in the overlapping region R2.
  • the second switch output terminal 422-1 may be located in the overlapping region R2, or the second filter input terminal 321-1 and the second switch output terminal 422-1 may be located in the overlapping region R2. May be good.
  • the second switch output terminal 422-2 is located in the overlapping region R2.
  • the second filter input terminal 321-2 may be located in the overlapping region R2, or the second filter input terminal 321-2 and the second switch output terminal 422-2 may be located in the overlapping region R2. May be good.
  • At least one of the second switch output terminal 422 may overlap with the second switch 42A and the second filter element 32A when the module substrate 70 is viewed in a plan view.
  • the shield portion 80 does not have to be located over the entire space between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view.
  • each of the through-hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84 is located over the entire space between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view. It does not have to be.
  • the shield portion 80 is located at least one of the first filter input terminal 311 and the second filter input terminal 321 and the first filter output terminal 312 and the second filter output terminal 322 when the module board 70 is viewed in a plan view. You just have to do it.
  • the shield portion 80 may be composed of a row of a plurality of components when the module substrate 70 is viewed in a plan view.
  • the through-hole wiring 81 may be configured by a row of a plurality of through-hole wiring elements.
  • the ground electrode 82 may be composed of a plurality of rows of ground electrode elements.
  • the connecting member 83 may be composed of a plurality of rows of connecting member elements.
  • the shield wall 84 may be composed of a plurality of rows of shield wall elements.
  • the shield wall 84 may be made of a metal block such as copper, a shield member, a wire shield, or the like.
  • the through-hole wiring 81 does not necessarily have to completely penetrate the module board 70 and is not exposed to at least one of the first main surface 70a and the second main surface 70b of the module board 70. May be good. That is, the through hole wiring 81 is not limited to the through via, and may be an interstitial via, a blind via, or a verid via.
  • the height of the shield wall 84 from the first main surface 70a may be less than the height of the first filter element 31 from the first main surface 70a, or the height of the second filter element 32 from the first main surface 70a. It may be less than the height from one main surface 70a.
  • the shield wall 84 may be indirectly contacted and connected to the metal layer 91.
  • the shield wall 84 may be contacted and connected to the metal layer 91 via a conductive member.
  • the shield wall 84 may be electrically connected to the metal layer 91, regardless of whether it is in direct contact with or indirectly in contact with the metal layer 91.
  • the shield wall 84 may not be in direct or indirect contact with the metal layer 91, and may not be connected to the metal layer 91.
  • the metal member 8 does not have to include all of the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield wall 84, and the through hole wiring 81, the ground electrode 82, the connecting member 83, and the shield. It may include at least one of the walls 84.
  • the metal member 8 is composed of only the shield portion 80, but the present invention is not limited to this, and a portion different from the shield portion 80 may be included.
  • the metal member 8 may include a portion extending from the shield wall 84 and connected to the ground pattern of the first filter element 31 and the second filter element 32.
  • the high frequency circuit 10 may be capable of supporting carrier aggregation (downlink carrier aggregation) in which a plurality of frequency bands are used simultaneously in the downlink.
  • the high frequency circuit may be connected between the signal processing circuit 11 and the antenna element 12 to transmit a high frequency signal from the antenna element 12 to the signal processing circuit 11.
  • the high frequency circuit may include a first low noise amplifier and a second low noise amplifier, a first filter element 31 and a second filter element 32, a module substrate 70, and a metal member 8.
  • the first low noise amplifier and the second low noise amplifier are connected to the signal processing circuit 11.
  • the first filter element 31 and the second filter element 32 are connected to the first low noise amplifier and the second low noise amplifier, respectively.
  • the module substrate 70 has a first main surface 70a and a second main surface 70b on opposite sides of each other.
  • the first filter element 31, the second filter element 32, the first low noise amplifier, and the second low noise amplifier are arranged on the module substrate 70.
  • the metal member 8 is connected to the ground.
  • the first filter element 31 and the second filter element 32 are arranged on the first main surface 70a of the module substrate 70.
  • the metal member 8 is located between the first filter element 31 and the second filter element 32 when the module substrate 70 is viewed in a plan view.
  • the first aspect is a high frequency circuit (10; 10A), wherein a first power amplifier (21) and a second power amplifier (22) that can be used simultaneously, and the first power amplifier (21) and the second power amplifier (21) are used.
  • the first filter element (31; 31A) and the second filter element (32; 32A) connected to the power amplifier (22), respectively, and the first main surface (70a) and the second main surface (70b) facing each other.
  • the module board (31; 31A), the second filter element (32; 32A), the first power amplifier (21), and the second power amplifier (22) are arranged. 70) and a metal member (8) connected to the ground.
  • the first filter element (31; 31A) and the second filter element (32; 32A) are arranged on the first main surface (70a) of the module substrate (70).
  • the metal member (8) is located between the first filter element (31; 31A) and the second filter element (32; 32A) when the module substrate (70) is viewed in a plan view. According to this aspect, the isolation between the filters (31, 32; 31A, 32A) electrically connected to different power amplifiers (21, 22) can be improved.
  • the second aspect is a high frequency circuit (10; 10A) based on the first aspect.
  • the metal member (8) has a through-hole wiring (81) formed between the first main surface (70a) and the second main surface (70b) of the module substrate (70). include.
  • the isolation between the filters (31, 32; 31A, 32A) electrically connected to different power amplifiers (21, 22) can be improved by a simple configuration.
  • the third aspect is a high frequency circuit (10; 10A) based on the first or second aspect.
  • the metal member (8) includes a shield wall (84) disposed on a first main surface (70a) of the module substrate (70). According to this aspect, the isolation between the filters (31, 32; 31A, 32A) can be further improved.
  • the fourth aspect is a high frequency circuit (10; 10A) based on the third aspect.
  • the height of the shield wall (84) from the first main surface (70a) is the height of the first filter element (31; 31A) from the first main surface (70a).
  • the fifth aspect is a high frequency circuit (10; 10A) based on the third or fourth aspect.
  • the high frequency circuit (10; 10A) includes a resin member (75) that seals the first filter element (31; 31A) and the second filter element (32; 32A), and the first filter element (32; 32A).
  • the resin member (75) is located on the side opposite to the first main surface (70a) of the module substrate (70) with respect to the one filter element (31; 31A) and the second filter element (32; 32A).
  • a metal layer (91) arranged on the surface and connected to the ground.
  • the shield wall (84) is electrically connected to the metal layer (91). According to this aspect, the isolation between the filters (31, 32; 31A, 32A) can be further improved.
  • the sixth aspect is a high frequency circuit (10; 10A) based on the fifth aspect.
  • the first power amplifier (21) corresponds to the first power class.
  • the second power amplifier (22) corresponds to the second power class.
  • the maximum output power of the first power class is larger than the maximum output power of the second power class.
  • the first filter element (31; 31A) comes into contact with the metal layer (91). According to this aspect, heat dissipation can be improved.
  • the second filter element (32; 32A) may further come into contact with the metal layer (91). This makes it possible to further improve the heat dissipation.
  • the seventh aspect is a high frequency circuit (10; 10A) based on any one of the first to fourth aspects.
  • the high frequency circuit (10; 10A) includes a resin member (75) that seals the first filter element (31; 31A) and the second filter element (32; 32A), and the second filter element (32; 32A).
  • the resin member (75) is located on the side opposite to the first main surface (70a) of the module substrate (70) with respect to the one filter element (31; 31A) and the second filter element (32; 32A).
  • Each of the first filter element (31; 31A) and the second filter element (32; 32A) comes into contact with the metal layer (91).
  • the eighth aspect is a high frequency circuit (10; 10A) based on any one of the first to seventh aspects.
  • the first filter element (31; 31A) and the second filter element (32; 32A) are connected to the first power amplifier (21) and the second power amplifier (22), respectively. It has a first filter input terminal (311) and a second filter input terminal (321), and a first filter output terminal (312) and a second filter output terminal (322) connected to the antenna element (12), respectively. ..
  • the isolation between the filters (31, 32; 31A, 32A) connected to different power amplifiers (21, 22) can be improved.
  • the ninth aspect is a high frequency circuit (10; 10A) based on the eighth aspect.
  • the metal member (8) is located between the first filter input terminal (311) and the second filter input terminal (321) and the second filter when the module substrate (70) is viewed in a plan view. It is located at least one of the 1 filter output terminal (312) and the 2nd filter output terminal (322). According to this aspect, the isolation between the filters (31, 32; 31A, 32A) can be further improved.
  • the tenth aspect is a high frequency circuit (10; 10A) based on the eighth or ninth aspect.
  • the high frequency circuit (10; 10A) further comprises a switch integrated circuit (4; 4A) arranged on the module substrate (70).
  • the switch integrated circuit (4; 4A) includes a first filter input terminal (311) and a second filter input terminal (321) of the first filter element (31; 31A) and the second filter element (32; 32A). It has a first switch (41; 41A) and a second switch (42; 42A) inserted between the first power amplifier (21) and the second power amplifier (22), respectively.
  • the filters (31, 32; 31A, 32A) to be used can be switched, and various communication methods can be supported.
  • the eleventh aspect is a high frequency circuit (10; 10A) based on the tenth aspect.
  • the switch integrated circuit (4; 4A) is arranged on the second main surface (70b) of the module substrate (70). According to this aspect, miniaturization can be achieved.
  • the twelfth aspect is a high frequency circuit (10; 10A) based on the eleventh aspect.
  • the metal member (8) is arranged on a ground electrode (82) formed in the switch integrated circuit (4; 4A) and a second main surface (70b) of the module substrate (70). It includes a connecting member (83) that is connected to the ground electrode (82). According to this aspect, the isolation between the filters (31, 32; 31A, 32A) can be further improved.
  • the thirteenth aspect is a high frequency circuit (10; 10A) based on the twelfth aspect.
  • the ground electrode (82) is a through silicon via of the switch integrated circuit (4; 4A). According to this aspect, the isolation between the filters (31, 32; 31A, 32A) can be further improved.
  • the fourteenth aspect is a high frequency circuit (10; 10A) based on any one of the tenth to thirteenth aspects.
  • the first switch (41; 41A) and the first filter element (31; 31A) overlap when the module substrate (70) is viewed in a plan view.
  • the length of the connection wiring between the first switch (41; 41A) and the first filter element (31; 31A) can be shortened, and the first switch (41; 41A) and the first filter element (1st filter element) can be shortened.
  • 31; 31A) can reduce the loss of high frequency signals.
  • the fifteenth aspect is a high frequency circuit (10) based on the fourteenth aspect.
  • the first switch (41) has a first switch input terminal (411) connected to the first power amplifier (21) and a first filter input of the first filter element (31). It has a first switch output terminal (412) connected to the terminal (311). At least one of the first filter input terminal (311) and the first switch output terminal (412) is the first switch (41) and the first filter element when the module substrate (70) is viewed in a plan view. It overlaps with (31). According to this aspect, the length of the connection wiring between the first switch (41) and the first filter element (31) can be shortened, and the length between the first switch (41) and the first filter element (31) can be shortened. High frequency signal loss can be reduced.
  • the sixteenth aspect is a high frequency circuit (10; 10A) based on any one of the tenth to fifteenth aspects.
  • the second switch (42; 42A) and the second filter element (32; 32A) overlap when the module substrate (70) is viewed in a plan view.
  • the length of the connection wiring between the second switch (42; 42A) and the second filter element (32; 32A) can be shortened, and the length of the connection wiring between the second switch (42; 42A) and the second filter element (32; 32A) can be shortened.
  • 32; 32A) can reduce the loss of high frequency signals.
  • the 17th aspect is a high frequency circuit (10) based on the 16th aspect.
  • the second switch (42) has a second switch input terminal (421) connected to the second power amplifier (22) and a second filter input of the second filter element (32). It has a second switch output terminal (422) connected to the terminal (321). At least one of the second filter input terminal (321) and the second switch output terminal (422) is the second switch (42) and the second filter element when the module substrate (70) is viewed in a plan view. It overlaps with (32). According to this aspect, the length of the connection wiring between the second switch (42) and the second filter element (32) can be shortened, and the length between the second switch (42) and the second filter element (32) can be shortened. High frequency signal loss can be reduced.
  • the eighteenth aspect is a high frequency circuit (10A) based on the fourteenth aspect.
  • the first filter element (31A) corresponds to a plurality of filter elements (314) having different pass bands and a plurality of filter elements (314) of the first filter element (31A). It has the first filter input terminal (311) of the above.
  • the first switch (41A) has a first switch input terminal (411) connected to the first power amplifier (21) and a plurality of first filter input terminals (311) of the first filter element (31A). It has a plurality of first switch output terminals (412) connected to each of the above, and the first switch input terminal (411) is connected to any one of the plurality of first switch output terminals (412). It is composed of.
  • the 19th aspect is a high frequency circuit (10A) based on the 14th or 18th aspect.
  • the second filter element (32A) corresponds to a plurality of filter elements (324) having different pass bands and a plurality of filter elements (324) of the second filter element (32A). It has the second filter input terminal (321) of the above.
  • the second switch (42A) includes a second switch input terminal (421) connected to the second power amplifier (22) and a plurality of second filter input terminals (321) of the second filter element (32A). It has a plurality of second switch output terminals (422) connected to each of the above, and the second switch input terminal (421) is connected to any one of the plurality of second switch output terminals (422). It is composed of.
  • the twentieth aspect is a high frequency circuit (10; 10A) based on the first aspect.
  • the high frequency circuit (10; 10A) comprises a resin member (75), a metal layer (91), and a switch integrated circuit (4; 4A).
  • the resin member (75) seals the first filter element (31; 31A) and the second filter element (32; 32A).
  • the metal layer (91) is on the side opposite to the first main surface (70a) of the module substrate (70) with respect to the first filter element (31; 31A) and the second filter element (32; 32A). It is arranged on the resin member (75) so as to be located and connected to the ground.
  • the switch integrated circuit (4; 4A) includes a first filter input terminal (311) and a second filter input terminal (321) of the first filter element (31; 31A) and the second filter element (32; 32A). It has a first switch (41; 41A) and a second switch (42; 42A) inserted between the first power amplifier (21) and the second power amplifier (22), respectively.
  • the switch integrated circuit (4; 4A) is arranged on the second main surface (70b) of the module board (70).
  • the metal member (8) includes a through-hole wiring (81) formed between the first main surface (70a) and the second main surface (70b) of the module substrate (70) and the module substrate (70).
  • the ground electrode (82), which is a silicon through electrode of the integrated circuit (4; 4A), and the through hole wiring (81) and the ground electrode (81) arranged on the second main surface (70b) of the module substrate (70). Includes a connecting member (83) that connects to and to 82). According to this aspect, the isolation between the filters (31, 32) can be further improved.
  • the 21st aspect is a high frequency circuit (10; 10A) based on any one of the 1st to 20th aspects.
  • the first power amplifier (21) amplifies the first transmission signal in the first frequency band.
  • the second power amplifier (22) amplifies the second transmission signal in the second frequency band different from the first frequency band.
  • the first filter element (31; 31A) passes a signal in the first pass band including the first frequency band.
  • the second filter element (32; 32A) passes a signal in a second pass band including the second frequency band and different from the first pass band. According to this aspect, it is possible to support carrier aggregation (two uplink carrier aggregation) in which two frequency bands are used simultaneously in the uplink.
  • This disclosure is applicable to antenna devices. Specifically, the present disclosure is applicable to an antenna device having a core arranged inside a winding.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)

Abstract

L'invention concerne un circuit haute fréquence (10) pourvu d'un premier amplificateur de puissance (21), d'un second amplificateur de puissance (22), d'un premier élément de filtre (31), d'un second élément de filtre (32), d'un substrat de module (70) et d'un élément métallique (8). Le premier élément de filtre (31) et le second élément de filtre (32) sont respectivement connectés au premier amplificateur de puissance (21) et au second amplificateur de puissance (22). Le premier élément de filtre (31) et le second élément de filtre (32) sont disposés sur une première surface principale (70a) du substrat de module (70). L'élément métallique (8) est relié à la masse. L'élément métallique (8) est positionné entre le premier élément de filtre (31) et le second élément de filtre (32) dans une vue en plan du substrat de module (70).
PCT/JP2021/047684 2020-12-28 2021-12-22 Circuit haute fréquence WO2022145320A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-219112 2020-12-28
JP2020219112 2020-12-28

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WO2022145320A1 true WO2022145320A1 (fr) 2022-07-07

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003008469A (ja) * 2001-06-21 2003-01-10 Kyocera Corp 高周波モジュール
JP2005244336A (ja) * 2004-02-24 2005-09-08 Kyocera Corp 電子回路モジュール
JP2018503262A (ja) * 2015-01-15 2018-02-01 クアルコム，インコーポレイテッド ３ｄ集積回路
WO2018159453A1 (fr) * 2017-02-28 2018-09-07 株式会社村田製作所 Module
WO2019065419A1 (fr) * 2017-09-29 2019-04-04 株式会社村田製作所 Module haute fréquence et dispositif de communication
WO2019240095A1 (fr) * 2018-06-11 2019-12-19 株式会社村田製作所 Module haute fréquence et dispositif de communication
JP2020102693A (ja) * 2018-12-20 2020-07-02 株式会社村田製作所 高周波モジュールおよび通信装置
US20200313645A1 (en) * 2019-03-25 2020-10-01 Skyworks Solutions, Inc. Acoustic wave filters with isolation

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003008469A (ja) * 2001-06-21 2003-01-10 Kyocera Corp 高周波モジュール
JP2005244336A (ja) * 2004-02-24 2005-09-08 Kyocera Corp 電子回路モジュール
JP2018503262A (ja) * 2015-01-15 2018-02-01 クアルコム，インコーポレイテッド ３ｄ集積回路
WO2018159453A1 (fr) * 2017-02-28 2018-09-07 株式会社村田製作所 Module
WO2019065419A1 (fr) * 2017-09-29 2019-04-04 株式会社村田製作所 Module haute fréquence et dispositif de communication
WO2019240095A1 (fr) * 2018-06-11 2019-12-19 株式会社村田製作所 Module haute fréquence et dispositif de communication
JP2020102693A (ja) * 2018-12-20 2020-07-02 株式会社村田製作所 高周波モジュールおよび通信装置
US20200313645A1 (en) * 2019-03-25 2020-10-01 Skyworks Solutions, Inc. Acoustic wave filters with isolation

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