WO2022130938A1 - 半導体部材用樹脂組成物に用いる中空樹脂粒子 - Google Patents

半導体部材用樹脂組成物に用いる中空樹脂粒子 Download PDF

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Publication number
WO2022130938A1
WO2022130938A1 PCT/JP2021/043435 JP2021043435W WO2022130938A1 WO 2022130938 A1 WO2022130938 A1 WO 2022130938A1 JP 2021043435 W JP2021043435 W JP 2021043435W WO 2022130938 A1 WO2022130938 A1 WO 2022130938A1
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Prior art keywords
resin particles
hollow resin
hollow
semiconductor member
monomer
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English (en)
French (fr)
Japanese (ja)
Inventor
春彦 松浦
光一朗 岡本
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Sekisui Kasei Co Ltd
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Sekisui Kasei Co Ltd
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Priority to CN202180084299.1A priority Critical patent/CN116685611B/zh
Priority to KR1020237018450A priority patent/KR102886838B1/ko
Publication of WO2022130938A1 publication Critical patent/WO2022130938A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/12—Polymerisation in non-solvents
    • C08F2/16—Aqueous medium
    • C08F2/22—Emulsion polymerisation
    • C08F2/24—Emulsion polymerisation with the aid of emulsifying agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/34—Monomers containing two or more unsaturated aliphatic radicals
    • C08F212/36—Divinylbenzene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/285—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety
    • C08F220/286—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety and containing polyethylene oxide in the alcohol moiety, e.g. methoxy polyethylene glycol (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F255/00—Macromolecular compounds obtained by polymerising monomers on to polymers of hydrocarbons as defined in group C08F10/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
    • C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/062—Polyethers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to hollow resin particles used in a resin composition for a semiconductor member.
  • the insulating resin material used for the semiconductor member used in the semiconductor device has a low relative permittivity and dielectric loss tangent of the insulating resin in order to increase the transmission speed of a high frequency signal and reduce the loss during signal transmission. Required.
  • Acrylic hollow resin particles are known as one of the known hollow particles.
  • acrylic hollow resin particles can be obtained by suspend-polymerizing a monomer containing an acrylic polyfunctional monomer such as trimethylolpropane tri (meth) acrylate or dipentaerythritol hexaacrylate as a main component together with a hydrophobic solvent. It has been reported (Patent Document 1). However, the acrylic resin has a high relative permittivity and dielectric loss tangent, and deteriorates the low dielectric property. Therefore, the acrylic hollow resin particles described in Patent Document 1 cannot be applied to semiconductor devices that process high-frequency signals in recent years.
  • styrene-based hollow resin particles are known as hollow resin particles having a lower relative permittivity and dielectric loss tangent than acrylic-based hollow resin particles.
  • polyvinylbenzene hollow resin particles can be obtained by suspend-polymerizing divinylbenzene together with saturated hydrocarbons having 8 to 18 carbon atoms (specifically, hexadecane).
  • Patent Document 2 has been reported (Patent Document 2).
  • Patent Document 2 since the polydivinylbenzene hollow resin particles described in Patent Document 2 use polyvinyl alcohol as a dispersant, polyvinyl alcohol remains on the particle surface, and the relative permittivity and the dielectric loss tangent value of the particles themselves are increased.
  • An object of the present invention is to provide styrene-based hollow resin particles used in a resin composition for a semiconductor member, which can provide a semiconductor member capable of exhibiting excellent low dielectric properties when used in the resin composition for a semiconductor member. ..
  • the present inventor has studied a technique for improving the low dielectric property of a semiconductor member, assuming a case where styrene-based hollow resin particles are mixed with an insulating resin to form a resin composition for a semiconductor member.
  • a specific amount of a monomer having a specific structure as the material monomer of the styrene-based hollow resin particles, the content of the alkali metal and the alkaline earth metal contained in the obtained styrene-based hollow resin particles can be suppressed, and thus the content of the alkali metal and the alkaline earth metal can be suppressed.
  • the hollow resin particles used in the resin composition for semiconductor members according to the embodiment of the present invention are Hollow resin particles having a shell portion and a hollow portion surrounded by the shell portion.
  • the total concentration of the lithium element, the sodium element, the potassium element, the magnesium element, and the potassium element contained in the hollow resin particles is 200 mg / kg or less.
  • the total concentration of fluoride ion, chloride ion, nitrite ion, nitrate ion, phosphate ion, and sulfate ion contained in the hollow resin particles is 200 mg / kg or less.
  • the average particle size of the hollow resin particles is 0.1 ⁇ m to 5.0 ⁇ m.
  • the shell portion is represented by an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer represented by the formula (1) (meth). It contains an aromatic polymer (P1) obtained by polymerizing a monomer composition containing c).
  • R 1 represents H or CH 3
  • R 2 represents H, an alkyl group, or a phenyl group
  • R 3 -O represents an oxyalkylene group having 2 to 18 carbon atoms
  • m represents the oxyalkylene group. It is the average number of added moles and represents a number from 1 to 100.
  • the oxyalkylene group is at least one selected from the group consisting of an oxyethylene group, an oxypropylene group, and an oxybutylene group.
  • the monomer composition comprises 10% by weight to 70% by weight of the aromatic crosslinkable monomer (a), 10% by weight to 70% by weight of the aromatic monofunctional monomer (b), and It contains 1.0% by weight to 20% by weight of the (meth) acrylic acid ester-based monomer (c) represented by the general formula (1).
  • the shell portion is composed of the aromatic polymer (P1), a polyolefin, a styrene polymer, a (meth) acrylic acid polymer, and a styrene- (meth) acrylic acid polymer. It comprises at least one non-crosslinking polymer (P2) selected from the group.
  • the aromatic crosslinkable monomer (a) is divinylbenzene.
  • the aromatic monofunctional monomer (b) is at least one selected from the group consisting of styrene and ethyl vinylbenzene.
  • the semiconductor member according to the embodiment of the present invention includes hollow resin particles used in the resin composition for the semiconductor member according to the embodiment of the present invention.
  • styrene-based hollow resin particles used in a resin composition for a semiconductor member which can provide a semiconductor member capable of exhibiting excellent low dielectric properties when used in the resin composition for a semiconductor member. be able to.
  • FIG. It is a TEM photograph figure of the hollow resin particle (1) used in the resin composition for a semiconductor member obtained in Example 1.
  • FIG. It is a TEM photograph figure of the hollow resin particle (2) used in the resin composition for a semiconductor member obtained in Example 2.
  • FIG. It is a TEM photograph figure of the hollow resin particle (3) used in the resin composition for a semiconductor member obtained in Example 3.
  • FIG. It is a TEM photograph figure of the hollow resin particle (4) used in the resin composition for a semiconductor member obtained in Example 4.
  • FIG. It is a TEM photograph figure of the hollow resin particle (5) used in the resin composition for a semiconductor member obtained in Example 5.
  • FIG. It is a TEM photograph figure of the hollow resin particle (6) used in the resin composition for a semiconductor member obtained in Example 6.
  • FIG. 7 It is a TEM photograph figure of the hollow resin particle (7) used in the resin composition for a semiconductor member obtained in Example 7.
  • FIG. 8 It is a TEM photograph figure of the hollow resin particle (8) used in the resin composition for a semiconductor member obtained in Example 8.
  • FIG. 10 It is a TEM photograph figure of the hollow resin particle (10) used in the resin composition for a semiconductor member obtained in Example 10.
  • FIG. It is a TEM photograph figure of the hollow resin particle (11) used in the resin composition for a semiconductor member obtained in Example 11.
  • the semiconductor member means a member constituting a semiconductor, and examples thereof include a semiconductor package and a semiconductor module.
  • the resin composition for a semiconductor member means a resin composition used for a semiconductor member. Therefore, the hollow resin particles used in the resin composition for semiconductor members according to the embodiment of the present invention are used in the resin composition for semiconductor members, and are therefore preferably used for semiconductor members such as semiconductor packages and semiconductor modules.
  • Such a semiconductor member is a semiconductor member according to the embodiment of the present invention, and includes hollow resin particles used in the resin composition for the semiconductor member according to the embodiment of the present invention.
  • a semiconductor package is an IC chip as an essential component, and is a mold resin, an underfill material, a mold underfill material, a die bond material, a prepreg for a semiconductor package substrate, a metal-clad laminate for a semiconductor package substrate, and a printed circuit board for a semiconductor package. It is constructed using at least one member selected from the build-up materials of.
  • a semiconductor module is a prepreg for a printed circuit board, a metal-clad laminate for a printed circuit board, a build-up material for a printed circuit board, a solder resist material, a coverlay film, an electromagnetic wave shielding film, and a print, with a semiconductor package as an essential component. It is configured by using at least one member selected from the adhesive sheet for a circuit board.
  • the expression “(meth) acrylic” means “acrylic and / or methacrolein”
  • the expression “(meth) acrylate” means “acrylate and / or methacrylate”.
  • the expression “(meth) allyl” means “allyl and / or methacrolein”
  • “acrolein and / or methacrolein” is used. It means “rain”.
  • the expression “acid (salt)” when used in the present specification, it means “acid and / or a salt thereof”. Examples of the salt include alkali metal salts and alkaline earth metal salts, and specific examples thereof include sodium salts and potassium salts.
  • the resin composition for a semiconductor member is a resin composition used for a semiconductor member.
  • Such resin compositions typically include an insulating resin.
  • an insulating resin any suitable resin can be adopted as long as the effect of the present invention is not impaired.
  • examples of such insulating resins include polyphenylene ether, polyphenylene sulfide, polyimide, polyetherimide, polybismaleimide, polyarylate, epoxy resin, polyester resin, urethane resin, acrylic resin, cyanate resin, phenol resin, and polystyrene resin.
  • fluororesins such as PTFE and cycloolefin resins.
  • the hollow resin particles used in the resin composition for a semiconductor member according to the embodiment of the present invention are hollow resin particles having a shell portion and a hollow portion surrounded by the shell portion.
  • the term "hollow” as used herein means a state in which the inside is filled with a substance other than a resin, for example, a gas or a liquid, and is preferably filled with a gas in that the effects of the present invention can be further exhibited. It means the state of being.
  • the hollow portion may be composed of one hollow region or may be composed of a plurality of hollow regions. From the viewpoint that the amount of the resin component constituting the shell portion is relatively large and the hollow portion of the base material or the like is prevented from infiltrating into the hollow portion, the hollow portion is preferably composed of one hollow region.
  • the average particle size of the hollow resin particles is preferably 0.1 ⁇ m to 5.0 ⁇ m, more preferably 0.15 ⁇ m to 1.0 ⁇ m, still more preferably 0.2 ⁇ m to 0.8 ⁇ m, and particularly preferably 0.2 ⁇ m to 0.8 ⁇ m. It is 0.3 ⁇ m to 0.6 ⁇ m. If the average particle size of the hollow resin particles is within the above range, the effect of the present invention can be more exhibited. When the average particle size of the hollow resin particles is less than 0.1 ⁇ m, the thickness of the shell portion is relatively thin, so that the hollow resin particles may not have sufficient strength.
  • the average particle size of the hollow resin particles is larger than 5.0 ⁇ m, phase separation between the polymer and the solvent generated by the polymerization of the monomer components during suspension polymerization may be difficult to occur, which makes it difficult to form the shell portion. There is a risk of becoming.
  • the hollow resin particles used in the resin composition for semiconductor members according to the embodiment of the present invention preferably have a total concentration of lithium element, sodium element, potassium element, magnesium element, and potassium element contained in the hollow resin particles. It is 200 mg / kg or less, more preferably 150 mg / kg or less, still more preferably 100 mg / kg or less, and particularly preferably 50 mg / kg or less. If the total concentration of the lithium element, the sodium element, the potassium element, the magnesium element, and the potassium element contained in the hollow resin particles is within the above range, the effect of the present invention can be more exhibited. If the total concentration of lithium element, sodium element, potassium element, magnesium element, and potassium element contained in the hollow resin particles is too large outside the above range, the semiconductor member containing the hollow resin particles has excellent low dielectric properties. May not be expressed.
  • the hollow resin particles used in the resin composition for a semiconductor member according to the embodiment of the present invention include fluoride ions, chloride ions, nitrite ions, nitrate ions, phosphate ions, and sulfate ions contained in the hollow resin particles.
  • the total concentration is preferably 200 mg / kg or less, more preferably 150 mg / kg or less, still more preferably 100 mg / kg or less, and particularly preferably 50 mg / kg or less. If the total concentration of fluoride ion, chloride ion, nitrite ion, nitrate ion, phosphate ion, and sulfate ion contained in the hollow resin particles is within the above range, the effect of the present invention can be more exhibited.
  • the semiconductor containing the hollow resin particles may not be able to exhibit excellent low dielectric properties.
  • the shell portion contains a monomer composition containing an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer (c) represented by the formula (1). It contains an aromatic polymer (P1) obtained by polymerization.
  • the shell portion contains such an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer (c) represented by the formula (1).
  • the effect of the present invention can be further exhibited.
  • the hollow resin is provided by the polar group provided in the aromatic polymer (P1). The adhesion between the particles and the insulating resin can be improved.
  • R 1 represents H or CH 3
  • R 2 represents H, an alkyl group, or a phenyl group
  • R 3 -O represents an oxyalkylene group having 2 to 18 carbon atoms
  • m represents the oxyalkylene group. It is the average number of added moles and represents a number from 1 to 100.
  • the content ratio of the aromatic polymer (P1) in the shell portion is preferably 60% by weight to 100% by weight, more preferably 70% by weight to 100% by weight, in that the effect of the present invention can be more exhibited. It is more preferably 80% by weight to 100% by weight, and particularly preferably 90% by weight to 100% by weight.
  • the aromatic polymer (P1) is an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer (c) represented by the formula (1). It is obtained by polymerizing the monomer composition containing the mixture. That is, the aromatic polymer (P1) is represented by a structural unit derived from the aromatic crosslinkable monomer (a), a structural unit derived from the aromatic monofunctional monomer (b), and the formula (1) (meth). It has a structural unit derived from the acrylic acid ester-based monomer (c).
  • the monomer composition preferably contains 10% by weight to 70% by weight of the aromatic crosslinkable monomer (a) and 10% by weight of the aromatic monofunctional monomer (b) in that the effects of the present invention can be further exhibited.
  • the aromatic monofunctional monomer (b) is 20% by weight to 65% by weight
  • the (meth) acrylic acid ester-based monomer (c) represented by the formula (1) is 2.
  • the monomer composition contains an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer (c) represented by the formula (1).
  • the total content of the aromatic crosslinkable monomer (a), the aromatic monofunctional monomer (b), and the (meth) acrylic acid ester-based monomer (c) represented by the formula (1) in the monomer composition Is preferably 80% by weight to 100% by weight, more preferably 85% by weight to 100% by weight, still more preferably 90% by weight to 100% by weight, in that the effect of the present invention can be more exhibited. It is particularly preferably 95% by weight to 100% by weight.
  • the monomer composition is an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester type represented by the formula (1) as long as the effects of the present invention are not impaired. Any suitable other monomer other than the monomer (c) may be contained.
  • the other monomers may be only one kind or two or more kinds.
  • Aromatic crosslinkable monomer (a)) As the aromatic crosslinkable monomer (a), any suitable aromatic crosslinkable monomer can be adopted as long as it is an aromatic monomer having crosslinkability, as long as the effect of the present invention is not impaired.
  • aromatic crosslinkable monomer (a) examples include divinylbenzene, divinylnaphthalene, and diallyl phthalate in that the effects of the present invention can be further exhibited.
  • Divinylbenzene is preferable as the aromatic crosslinkable monomer (a) from the viewpoint of further exhibiting the effects of the present invention and the reactivity.
  • the aromatic crosslinkable monomer (a) may be only one kind or two or more kinds.
  • aromatic monofunctional monomer (b) any suitable aromatic monofunctional monomer can be adopted as long as it is a monofunctional aromatic monomer, as long as the effect of the present invention is not impaired.
  • an aromatic monofunctional monomer (b) for example, styrene, ethylvinylbenzene, ⁇ -methylstyrene, vinyltoluene, o-chlorostyrene, m- Examples thereof include chlorostyrene, p-chlorostyrene, vinylbiphenyl and vinylnaphthalene.
  • the aromatic monofunctional monomer (b) is preferably at least one selected from the group consisting of styrene and ethylvinylbenzene from the viewpoint of further exhibiting the effects of the present invention and the reactivity.
  • the aromatic monofunctional monomer (b) may be only one kind or two or more kinds.
  • the (meth) acrylic acid ester-based monomer (c) is represented by the formula (1).
  • R 1 represents H or CH 3 .
  • R 2 represents H, an alkyl group, or a phenyl group.
  • R3 - O represents an oxyalkylene group having 2 to 18 carbon atoms. That is, in the formula (1), R 3 represents an alkylene group having 2 to 18 carbon atoms.
  • R3 ⁇ O is an oxyalkylene group having 2 to 18 carbon atoms, preferably an oxyalkylene group having 2 to 8 carbon atoms, and more preferably an oxyalkylene group having 2 to 4 carbon atoms. It is an oxyalkylene group.
  • R3 - O is at least two types selected from an oxyethylene group, an oxypropylene group, and an oxybutylene group
  • the addition form of R3 - O may be random addition, block addition, alternate addition, or the like. It may be in any form.
  • the addition form referred to here means the form itself, and does not mean that it must be obtained by an addition reaction.
  • R3 - O is composed of an oxyethylene group, an oxypropylene group, and an oxybutylene group (typically, an oxytetramethylene group) in that the effects of the present invention can be further exhibited. At least one selected from the group.
  • m represents the average number of moles of substance added (sometimes referred to as "chain length") of the oxyalkylene group.
  • m is a number of 1 to 100, preferably a number of 1 to 40, more preferably a number of 2 to 30, still more preferably a number of 3 to 20, and particularly preferably a number of 4 to 18. It is a number, most preferably a number of 5 to 15. When m is within the above range, the effect of the present invention can be more exhibited.
  • (meth) acrylic acid ester-based monomer (c) for example, methoxypolyethylene glycol methacrylate, ethoxypolyethylene glycol methacrylate, propoxypolyethylene glycol methacrylate, butoxypolyethylene glycol methacrylate, hexaoxy, in that the effects of the present invention can be further exhibited.
  • (meth) acrylic acid ester-based monomer (c) a commercially available product can also be adopted.
  • the product name "Blemmer” series manufactured by NOF CORPORATION can be adopted.
  • the (meth) acrylic acid ester-based monomer (c) may be of only one type or of two or more types.
  • the shell portion is at least one selected from the group consisting of an aromatic polymer (P1), a polyolefin, a styrene polymer, a (meth) acrylic acid polymer, and a styrene- (meth) acrylic acid polymer. It may contain a non-crosslinking polymer (P2).
  • the content of the non-crosslinkable polymer (P2) in the shell portion is preferably 0% by weight to 40% by weight, more preferably 0% by weight to 30% by weight, in that the effects of the present invention can be more exhibited. It is more preferably 0% by weight to 20% by weight, and particularly preferably 0% by weight to 10% by weight.
  • polystyrene resin examples include polyethylene, polypropylene, poly ⁇ -olefin and the like. From the viewpoint of solubility in the monomer composition, it is preferable to use a side chain crystalline polyolefin using a long-chain ⁇ -olefin as a raw material, a low molecular weight polyolefin produced by a metallocene catalyst, or an olefin oligomer.
  • styrene polymer examples include polystyrene, styrene-acrylonitrile copolymer, acrylonitrile-butadiene-styrene copolymer and the like.
  • Examples of the (meth) acrylic acid-based polymer include polymethyl (meth) acrylate, polyethyl (meth) acrylate, polybutyl (meth) acrylate, and polypropyl (meth) acrylate.
  • styrene- (meth) acrylic acid-based polymer examples include a styrene-methyl (meth) acrylate copolymer, a styrene-ethyl (meth) acrylate copolymer, a styrene-butyl (meth) acrylate copolymer, and a styrene-propyl. Examples thereof include (meth) acrylate copolymers.
  • the relative permittivity of the hollow resin particles is preferably 1.0 to 2.5, more preferably 1.0 to 2.4, and even more preferably 1.0 to 2.3. If the relative permittivity of the hollow resin particles is within the above range, the effect of the present invention can be more exhibited. When the relative permittivity of the hollow resin particles exceeds 2.5, the semiconductor member containing the hollow resin particles may not be able to exhibit excellent low dielectric properties.
  • the relative permittivity of the hollow resin particles can be calculated with reference to, for example, "dielectric constant of the mixed system" (Applied Physics, Vol. 27, No. 8 (1958)).
  • the relative permittivity of the mixed system of the dispersion medium and the hollow resin particles is ⁇
  • the relative permittivity of the base material for example, a resin composition such as polyimide or epoxy
  • the relative permittivity of the hollow resin particles is ⁇ 1.
  • ⁇ 2 and the volume ratio of the hollow resin particles in the mixed system is ⁇ , the following equation holds. That is, if ⁇ , ⁇ 1 , and ⁇ are experimentally obtained, the relative permittivity ⁇ 2 of the hollow resin particles can be calculated.
  • the volume fraction ⁇ of the hollow resin particles in the mixed system of the dispersion medium and the hollow resin particles can be obtained as follows.
  • the density of the hollow resin particles can be determined experimentally using a pycnometer (Cortec Co., Ltd., TQC 50 mL specific gravity bottle) and ARUFON UP-1080 (Toa Synthetic Co., Ltd., density 1.05 g / cm 3 ) which is a liquid polymer. .. Specifically, the hollow resin particles and ARUFON UP-1080 are defoamed and stirred using a planetary stirring defoaming machine (MAZELSTAR KK-250, manufactured by KURABO) so that the ratio of the hollow resin particles is 10% by weight. Make an evaluation mixture.
  • a planetary stirring defoaming machine MAZELSTAR KK-250, manufactured by KURABO
  • the evaluation mixture is filled in a pycnometer having a capacity of 50 mL, and the weight of the filled evaluation mixture is calculated by subtracting the weight of the empty pycnometer from the weight of the pycnometer filled with the mixture. From this value, the density of the hollow resin particles can be calculated using the following formula.
  • the hollow resin particles used in the resin composition for a semiconductor member according to the embodiment of the present invention can be produced by any suitable method as long as the effects of the present invention are not impaired.
  • Such a manufacturing method includes, for example, a dispersion step (step 1), a polymerization step (step 2), a cleaning step (step 3), and a drying step (step 4).
  • step 1 the aromatic crosslinkable monomer (a), the aromatic monofunctional monomer (b), and the (meth) acrylic acid ester-based monomer (c) represented by the formula (1) are added to the aqueous solution containing the dispersant. ), A polymerization initiator, and an organic mixed solution containing an organic solvent having a boiling point of less than 100 ° C. are dispersed.
  • any appropriate dispersion method is adopted as long as the organic mixture solution can be present in the form of droplets in the aqueous solution, as long as the effect of the present invention is not impaired.
  • Such a dispersion method is typically a dispersion method using a homogenizer, and examples thereof include an ultrasonic homogenizer and a high-pressure homogenizer.
  • the aqueous solution contains an aqueous medium and a dispersant.
  • aqueous medium examples include water, a mixed medium of water and a lower alcohol (methanol, ethanol, etc.).
  • a mixed medium of water and a lower alcohol methanol, ethanol, etc.
  • the water at least one selected from ion-exchanged water and distilled water is preferable.
  • any appropriate dispersant can be adopted as long as the effect of the present invention is not impaired.
  • a surfactant is preferably used as the dispersant in that the effects of the present invention can be further exhibited.
  • the surfactant include anionic surfactants, cationic surfactants, amphoteric ionic surfactants, nonionic surfactants and the like.
  • anionic surfactant examples include an alkyl sulfate ester fatty acid salt, an alkylbenzene sulfonate, an alkylnaphthalene sulfonate, an alkane sulfonate, an alkyldiphenyl ether sulfonate, a dialkyl sulfosuccinate, a monoalkyl sulfosuccinate, and a poly.
  • Non-reactive anionic surfactants such as oxyethylene alkylphenyl ether phosphate, polyoxyethylene-1- (allyloxymethyl) alkyl ether sulfate ester ammonium salt, polyoxyethylene alkylpropenylphenyl ether sulfate ester ammonium salt, Examples thereof include reactive anionic surfactants such as polyoxyalkylene alkenyl ether ammonium sulfate.
  • cationic surfactant examples include cationicity such as alkyltrimethylammonium salt, alkyltriethylammonium salt, dialkyldimethylammonium salt, dialkyldiethylammonium salt, and N-polyoxyalkylene-N, N, N-trialkylammonium salt.
  • surfactants include surfactants.
  • amphoteric ionic surfactant examples include lauryldimethylamine oxide, phosphoric acid ester salt, and phosphite ester-based surfactant.
  • nonionic surfactant examples include polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, polyoxyethylene fatty acid ester, sorbitan fatty acid ester, polysorbitan fatty acid ester, polyoxyethylene alkylamine, glycerin fatty acid ester, and oxyethylene.
  • examples include oxypropylene block polymer.
  • the amount of the surfactant added is preferably 0.01 part by weight to 1 part by weight with respect to 100 parts by weight of the organic mixture solution.
  • the surfactant may be only one kind or two or more kinds.
  • the aqueous solution may contain any suitable other components as long as the effects of the present invention are not impaired.
  • the organic mixed solution is a monomer composition containing an aromatic crosslinkable monomer (a), an aromatic monofunctional monomer (b), and a (meth) acrylic acid ester-based monomer (c) represented by the formula (1). It contains a polymerization initiator and an organic solvent having a boiling point of less than 100 ° C.
  • the explanation in the item of ⁇ hollow resin particles >>>> can be used as it is.
  • any suitable polymerization initiator can be adopted as long as the effect of the present invention is not impaired.
  • the polymerization initiator preferably has a 10-hour half-life temperature of 90 ° C. or lower.
  • the polymerization initiator remaining in the hollow resin particles can be completely decomposed. For example, when a semiconductor member containing the hollow resin particles is heated by solder reflow or the like, the remaining polymerization is carried out. It is possible to suppress oxidative deterioration and gas generation of the resin due to the initiator.
  • the polymerization initiator is preferably polymerized at a combination of a reaction temperature and a reaction time at which the decomposition rate of the polymerization initiator calculated by the following formula is 98% or more. Under such polymerization conditions, the polymerization initiator remaining in the hollow resin particles can be completely decomposed, and for example, the polymerization remaining when the semiconductor member containing the hollow resin particles is heated by solder reflow or the like. It is possible to suppress oxidative deterioration and gas generation of the resin due to the initiator.
  • k d represents the thermal decomposition rate constant
  • t represents the reaction time (hr)
  • A represents the frequency factor (hr -1 )
  • ⁇ E represents the activation energy (J / mol)
  • R represents the gas constant (8.314 J / mol ⁇ K)
  • T represents the reaction temperature (K).
  • polymerization initiator examples include lauroyl peroxide, benzoyl peroxide, benzoyl peroxide, orthomethoxybenzoyl peroxide, 3,5,5-trimethylhexanoyl peroxide, and t-butylperoxy-2-ethylhexano.
  • Organic peroxides such as ate, di-t-butyl peroxide; 2,2'-azobisisobutyronitrile, 1,1'-azobiscyclohexanecarbonitrile, 2,2'-azobis (2,4-azobis) Azo-based compounds such as dimethylvaleronitrile); and the like.
  • the amount of the polymerization initiator added is preferably in the range of 0.1 to 5 parts by weight with respect to 100 parts by weight of the monomer composition.
  • the polymerization initiator may be only one kind or two or more kinds.
  • Examples of the organic solvent having a boiling point of less than 100 ° C. include heptane, hexane, cyclohexane, methyl acetate, ethyl acetate, methyl ethyl ketone, chloroform, carbon tetrachloride, and the like.
  • the organic solvent having a boiling point of less than 100 ° C. may be a mixed solvent.
  • the amount of the organic solvent added having a boiling point of less than 100 ° C. is preferably 20 parts by weight to 250 parts by weight with respect to 100 parts by weight of the monomer composition.
  • the organic mixed solution may contain any suitable other components as long as the effects of the present invention are not impaired.
  • suitable other components include ⁇ non-crosslinkable polymer (P2)> of ⁇ shell portion >> of ⁇ hollow resin particles >>>>.
  • the amount of the non-crosslinkable polymer (P2) added is preferably 0 to 67 parts by weight with respect to 100 parts by weight of the monomer composition.
  • the non-crosslinkable polymer (P2) may be only one kind or two or more kinds.
  • Step 2 is a step of heating the dispersion obtained in Step 1 for suspension polymerization.
  • any appropriate polymerization temperature can be adopted as long as it is suitable for suspension polymerization, as long as the effect of the present invention is not impaired.
  • the polymerization temperature is preferably 30 ° C to 80 ° C.
  • any appropriate polymerization time can be adopted as long as it is suitable for suspension polymerization, as long as the effect of the present invention is not impaired.
  • the polymerization time is preferably 1 hour to 20 hours.
  • Post-heating which is preferably performed after polymerization, is a suitable treatment for obtaining hollow resin particles having a high degree of perfection.
  • any appropriate temperature can be adopted as long as the effect of the present invention is not impaired.
  • the temperature for such post-heating is preferably 50 ° C to 120 ° C.
  • any appropriate time can be adopted as long as the effect of the present invention is not impaired.
  • the time for such post-heating is preferably 1 hour to 10 hours.
  • Step 3 is a step of cleaning the slurry obtained in step 2.
  • any appropriate cleaning method can be adopted as long as the effect of the present invention is not impaired.
  • a cleaning method for example, (1) after forming hollow resin particles, a very high centrifugal acceleration is applied to settle the hollow resin particles using a high-speed centrifuge or the like to remove the supernatant. , A method of newly adding ion-exchanged water or distilled water, dispersing the settled hollow resin particles in the ion-exchanged water, and removing impurities by repeating this operation several times, (2) Cross flow using a ceramics filter or the like.
  • Examples thereof include a method of separating the hollow resin particles using a filter or the like and cleaning with a cleaning solvent.
  • Step 4 is a step of drying the washed slurry obtained in step 3.
  • any appropriate drying method can be adopted as long as the effect of the present invention is not impaired.
  • Examples of such a drying method include drying by heating.
  • any appropriate temperature can be adopted as long as the effect of the present invention is not impaired.
  • the temperature for such heating is preferably 50 ° C to 120 ° C.
  • any appropriate time can be adopted as long as the effect of the present invention is not impaired.
  • the time for such heating is preferably 1 hour to 10 hours.
  • part means “part by weight”
  • % means “% by weight”.
  • the Z average particle size of the hollow resin particles or particles was measured by using a dynamic light scattering method, and the measured Z average particle size was used as the obtained average particle size of the hollow resin particles or particles. That is, first, the obtained slurry-shaped hollow resin particles or particles are diluted with ion-exchanged water, and the aqueous dispersion adjusted to 0.1% by weight is irradiated with laser light and scattered from the hollow resin particles or particles. The scattered light intensity was measured over time in microseconds. Then, the scattering intensity distribution caused by the detected hollow resin particles or particles was applied to the normal distribution, and the Z average particle size of the hollow resin particles or particles was obtained by a cumulant analysis method for calculating the average particle size.
  • the measurement of the Z average particle size can be easily carried out with a commercially available particle size measuring device.
  • the Z average particle size was measured using a particle size measuring device (Zetasizer Nano ZS manufactured by Malvern).
  • a commercially available particle size measuring device is equipped with data analysis software, and the data analysis software can automatically analyze the measurement data to calculate the Z average particle size.
  • ⁇ TEM measurement Observation of hollow resin particles or hollow particles and their shape> Hollow resin particles or particles as dry powder were surface-treated (10 Pa, 5 mA, 10 seconds) using a "Osmium Coater Neoc-Pro" coating device manufactured by Meiwaforsis. Next, the hollow resin particles or particles were observed with a TEM (transmission electron microscope, H-7600 manufactured by Hitachi High-Technologies) to confirm the presence or absence of hollowness and the shape of the hollow resin particles or particles. At this time, the acceleration voltage was set to 80 kV, and the magnification was set to 5000 times or 10,000 times.
  • the amount of metal element was measured as follows.
  • (Measurement sample) 0.5 g of hollow resin particles were precisely weighed in a washed 50 mL plastic container. 1 mL of washing ethanol was added, and the mixture was well mixed and dispersed. Further, 50 mL of ion-exchanged water was added and mixed well. After performing ultrasonic cleaning and extraction for about 10 minutes, the mixture was allowed to stand in a constant temperature bath at 60 ° C. for 60 minutes. The slurry after standing was filtered with an aqueous 0.20 ⁇ m chromatodisc and used as a measurement sample. (Measuring method) The metal element concentration in the measurement sample was measured under the following conditions.
  • the metal element concentration was obtained from a calibration curve prepared in advance.
  • the amount of metal element was calculated from the following formula.
  • Metal element amount (mg / kg) Measured metal element concentration ( ⁇ g / mL) x 51 (mL) ⁇ Sample amount (g)
  • the lower limit of quantification is 1 mg / kg, and the measurement result is less than or equal to the lower limit of quantification. In this case, the lower limit of quantification, 1 mg / kg, was used as the measurement result.
  • Measuring device "ICPE-9000" multi-type ICP emission spectroscopic analyzer manufactured by Shimadzu Corporation
  • Carrier flow rate 0.7L / min
  • Plasma flow rate 10.0L / min
  • Auxiliary flow rate 0.6L / min
  • Exposure time 30 seconds
  • Standard solution for calibration line US SPEX "XSTC-13" general-purpose mixed standard solution 31 elemental mixture (base 5% HNO 3 ) -about 10 mg / L each, "XSTC-8" general-purpose mixed standard solution 13 Elemental mixture (base H 2 O / trace HF) -about 10 mg / L each
  • (Measurement sample) 0.5 g of hollow resin particles were precisely weighed in a washed 50 mL plastic container. 1 mL of washing ethanol was added, and the mixture was well mixed and dispersed. Further, 50 mL of ion-exchanged water was added and mixed well. After performing ultrasonic cleaning and extraction for about 10 minutes, the mixture was allowed to stand in a constant temperature bath at 60 ° C. for 60 minutes. The slurry after standing was filtered with an aqueous 0.20 ⁇ m chromatodisc and used as a measurement sample. (Measuring method) A calibration curve was prepared by measuring the standard solution under the following measurement conditions.
  • the sample solution was measured under the same conditions. Using the peak area value of each ion obtained from the chromatogram, the ion elution concentration in the sample solution was determined from the calibration curve.
  • VB divinyl
  • the obtained slurry was cross-flow washed with 10 times the amount of ion-exchanged water using a ceramic filter having a pore diameter of 50 nm to remove impurities.
  • the obtained washed slurry was heated at 100 ° C. for 24 hours to obtain hollow resin particles (1) as dry powder.
  • the average particle size of the obtained hollow resin particles (1) was 356 nm, and the particle density was 0.65 g / cm 3 .
  • the TEM observation result of the obtained hollow resin particles (1) is shown in FIG. It was confirmed that the hollow resin particles (1) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 2 Hollow by performing the same operation as in Example 1 except that styrene (St) was 0.92 g, divinylbenzene (DVB) 810 was 1.48 g, heptane was 3.0 g, and parloyl L was 0.10 g.
  • Resin particles (2) were obtained.
  • the average particle size of the obtained hollow resin particles (2) was 382 nm, and the particle density was 0.64 g / cm 3 .
  • the TEM observation result of the obtained hollow resin particles (2) is shown in FIG. It was confirmed that the hollow resin particles (2) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 3 Hollow by performing the same operation as in Example 1 except that styrene (St) was 1.49 g, divinylbenzene (DVB) 810 was 2.41 g, heptane was 1.5 g, and parloyl L was 0.126 g.
  • Resin particles (3) were obtained.
  • the average particle size of the obtained hollow resin particles (3) was 329 nm, and the particle density was 0.69 g / cm 3 .
  • the TEM observation result of the obtained hollow resin particles (3) is shown in FIG. It was confirmed that the hollow resin particles (3) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 4 1.19 g of styrene (St), 1.93 g of divinylbenzene (DVB) 810, 0.10 g of parloyl L, and polystyrene instead of 0.3 g of HS Crysta 4100 (side chain crystalline polyolefin, Toyokuni Oil Co., Ltd.)
  • Hollow resin particles (4) were obtained by performing the same operation as in Example 1 except that PS) (non-crosslinked, weight average molecular weight 300,000) was 0.18 g.
  • the average particle size of the obtained hollow resin particles (4) was 390 nm, and the particle density was 0.67 g / cm 3 .
  • the TEM observation result of the obtained hollow resin particles (4) is shown in FIG. It was confirmed that the hollow resin particles (4) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 5 Hollow resin particles (5) were obtained by performing the same operation as in Example 1 except that the Blemmer 50 PEP-300 was set to 0.6 g and the HS Crysta 4100 was not used. The average particle size of the obtained hollow resin particles (5) was 310 nm. Moreover, the TEM observation result of the obtained hollow resin particles (5) is shown in FIG. It was confirmed that the hollow resin particles (5) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Resin particles (6) were obtained.
  • the average particle size of the obtained hollow resin particles (6) was 520 nm.
  • the TEM observation result of the obtained hollow resin particles (6) is shown in FIG. It was confirmed that the hollow resin particles (6) were hollow resin particles having a hollow surrounded by a shell.
  • Table 1 shows the composition and measurement results.
  • Example 7 Hollow resin particles (7) were obtained by performing the same operation as in Example 3 except that 0.3 g of Blemmer PME-100 was used instead of 0.3 g of Blemmer 50 PEP-300.
  • the average particle size of the obtained hollow resin particles (7) was 501 nm, and the particle density was 0.63 g / cm 3 .
  • the TEM observation result of the obtained hollow resin particles (7) is shown in FIG. It was confirmed that the hollow resin particles (7) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 9 Hollow resin particles (9) were operated in the same manner as in Example 3 except that 0.0081 g of Coatamine 86W (surfactant, Kao Corporation) was used instead of 0.017 g of Lapizol A-80. ) was obtained. The average particle size of the obtained hollow resin particles (9) was 539 nm. Moreover, the TEM observation result of the obtained hollow resin particles (9) is shown in FIG. It was confirmed that the hollow resin particles (9) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Coatamine 86W surfactant, Kao Corporation
  • Example 10 Hollow resin particles were operated in the same manner as in Example 3 except that 0.034 g of ADEKAMIN 4MAC-30 (surfactant, ADEKA Corporation) was used instead of 0.017 g of Rapisol A-80. (10) was obtained. The average particle size of the obtained hollow resin particles (10) was 430 nm. Moreover, the TEM observation result of the obtained hollow resin particles (10) is shown in FIG. It was confirmed that the hollow resin particles (10) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • ADEKAMIN 4MAC-30 surfactant, ADEKA Corporation
  • Example 11 Hollow resin particles (11) were obtained by performing the same operation as in Example 3 except that 0.0076 g of Adecamine 4MAC-30 was used instead of 0.017 g of Lapizol A-80. The average particle size of the obtained hollow resin particles (11) was 1270 nm. Moreover, the TEM observation result of the obtained hollow resin particles (11) is shown in FIG. It was confirmed that the hollow resin particles (11) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 12 1.38 g of styrene (St), 2.22 g of divinylbenzene (DVB) 810, 1.5 g of cyclohexane instead of heptane, 0.6 g of HS Crysta 4100, 0.054 g of parloyl L, and Lapizol A-80.
  • Hollow resin particles (12) were obtained by performing the same operation as in Example 3 except that 0.0085 g was used. The average particle size of the obtained hollow resin particles (12) was 416 nm. Moreover, the TEM observation result of the obtained hollow resin particles (12) is shown in FIG. It was confirmed that the hollow resin particles (12) were hollow resin particles having a hollow surrounded by a shell. Table 1 shows the composition and measurement results.
  • Example 13 Hollow resin particles (13) were obtained by performing the same operation as in Example 1 except that distilled water was used instead of ion-exchanged water in the cross-flow cleaning of the hollow resin particles.
  • the average particle size of the obtained hollow resin particles (13) was 356 nm. Table 1 shows the composition and measurement results.
  • the hollow resin particles used in the resin composition for a semiconductor member according to the embodiment of the present invention can suppress the content of the alkali metal and the alkaline earth metal contained therein. rice field. Therefore, the hollow resin particles used in the resin composition for a semiconductor member according to the embodiment of the present invention can provide a semiconductor member capable of exhibiting excellent low dielectric properties.
  • the hollow resin particles used in the resin composition for semiconductor members according to the embodiment of the present invention are used in the resin composition for semiconductor members, and therefore can be suitably used for semiconductor members such as semiconductor packages and semiconductor modules.

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