WO2022127060A1 - Structure d'encapsulation de dispositif d'alimentation et dispositif électronique d'alimentation - Google Patents

Structure d'encapsulation de dispositif d'alimentation et dispositif électronique d'alimentation Download PDF

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Publication number
WO2022127060A1
WO2022127060A1 PCT/CN2021/101671 CN2021101671W WO2022127060A1 WO 2022127060 A1 WO2022127060 A1 WO 2022127060A1 CN 2021101671 W CN2021101671 W CN 2021101671W WO 2022127060 A1 WO2022127060 A1 WO 2022127060A1
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Prior art keywords
power
electrode
chip
chips
power device
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PCT/CN2021/101671
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English (en)
Chinese (zh)
Inventor
曹周
黄源炜
郑明祥
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杰群电子科技（东莞）有限公司
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Publication of WO2022127060A1 publication Critical patent/WO2022127060A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a power device packaging structure and power electronic equipment.
  • the semiconductor packaging structure in the related art plays the role of placing, fixing, sealing and protecting the chip by encapsulating the chip; through the packaging technology, the isolation of the chip from the outside world is realized to prevent impurities in the air from affecting the chip circuit. Corrosion causes a decrease in electrical performance.
  • the electrode contacts on the chip are generally connected to the pins of the package shell with wires, and these pins are connected with other devices through the wires on the circuit board.
  • the packaging structure is very important.
  • One objective of the embodiments of the present application is to provide a power device packaging structure, which shortens the conduction path, increases the conduction channel, improves the heat dissipation performance of the product, and improves the reliability of the product.
  • Another object of the embodiments of the present application is to provide a power electronic device with better performance and higher reliability.
  • a power device packaging structure comprising:
  • a lead frame which includes a base island, and a first pin electrically connected to the base island;
  • the power chip has a first electrode and a second electrode on two opposite sides respectively; the first electrode is bonded to the front side of the metal sheet through a conductive bonding layer; the second electrode is bonded to the base through a conductive bonding layer island;
  • a package body which encapsulates the power chip, a part of the lead frame and a part of the metal sheet; the back side of the metal sheet exposes the package body, and a part of the first pin exposes the package body .
  • At least one of the power chips is a triode chip; a source electrode and a gate electrode are provided on the first surface of the triode chip, and a drain electrode is provided on the second surface opposite to the first surface;
  • the source is the first electrode, and the drain is the second electrode; or, the drain is the first electrode, and the source is the second electrode.
  • the lead frame further includes a second pin insulated from the base island, and the gate is electrically connected to the second pin through an electrical connector;
  • the power device packaging structure further includes a conductive sheet, the gate is bonded to the front surface of the conductive sheet through a conductive bonding layer, and the package body is exposed from the back surface of the conductive sheet.
  • the number of the power chips is two;
  • One of the power chips is a triode chip, and the other power chip is a diode chip; or, both the power chips are triode chips.
  • the number of the power chips is two; both of the power chips are diode chips;
  • the first electrode is an anode and the second electrode is a cathode; or, the first electrode is a cathode and the second electrode is an anode.
  • a side of the base island away from the power chip is exposed to the package body.
  • the base islands are all encapsulated inside the package body.
  • the power chips are included, and the number of the metal sheets is the same as that of the power chips; the first electrodes of each power chip are combined with one of the metal sheets.
  • each group of the device groups includes two power chips and a metal sheet; in the device group, the first electrodes of the two power chips are connected to the metal sheet. piece combination.
  • a power electronic device includes the power device packaging structure of the above solution, and further includes a circuit board, the back of the metal sheet is welded to the circuit board, and the pins are welded to the circuit board.
  • the beneficial effects of the present application are as follows: in the power device packaging structure, by arranging a metal sheet on the first electrode on one side of the power chip and exposing the metal sheet, the external lead of the first electrode and heat dissipation are realized; the The package structure shortens the electric and heat conduction path, increases the electric and heat conduction channel, improves the heat dissipation performance, and improves the reliability of the product; the power electronic equipment adopts the above-mentioned power device package structure, which has better performance and higher reliability.
  • FIG. 1 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application
  • FIG. 2 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application;
  • FIG. 3 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 4 is a top schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 5 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • FIG. 6 is a top schematic view of a power device packaging structure according to still another embodiment of the present application.
  • FIG. 7 is an application schematic diagram of the power device packaging structure according to the embodiment of the present application.
  • FIG. 8 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • FIG. 9 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • FIG. 10 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 11 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • FIG. 12 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • FIG. 13 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • FIG. 14 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 15 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • 16 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • 17 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • FIG. 18 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • 19 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • 20 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the present application.
  • 21 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • 22 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 23 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • 24 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • FIG. 25 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • 26 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • FIG. 27 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • FIG. 28 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • 29 is a plan view of the internal structure of the power device packaging structure according to the embodiment of the application.
  • FIG. 30 is a bottom schematic diagram of a power device packaging structure according to an embodiment of the present application.
  • 31 is a longitudinal cross-sectional view of a power device packaging structure according to an embodiment of the application.
  • power chip 11, triode chip; 111, source electrode; 112, gate electrode; 12, diode chip; 20, lead frame; 21, base island; 22, first pin; 23, second tube feet; 30, metal sheet; 40, electrical connector; 50, conductive bonding layer; 60, package body; 80, circuit board; 90, heat sink.
  • connection and “fixed” should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection or an integral body; it may be a mechanical connection , it can also be an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of the two elements or the interaction relationship between the two elements.
  • connection and “fixed” should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection or an integral body; it may be a mechanical connection , it can also be an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of the two elements or the interaction relationship between the two elements.
  • a first feature "on” or “under” a second feature may include direct contact between the first and second features, or may include the first and second features Not directly but through additional features between them.
  • the first feature being “above”, “over” and “above” the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes the first feature is directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.
  • the present application proposes a power device packaging structure, which improves the heat dissipation performance of the product and improves the reliability of the product.
  • the packaging structure includes:
  • the lead frame 20 includes a base island 21 and a first pin 22 electrically connected to the base island 21;
  • the power chip 10 is provided with a first electrode and a second electrode on opposite sides, the first electrode is bonded to the front surface of the metal sheet 30 through the conductive bonding layer 50, and the second electrode is bonded to the base island 21 through the conductive bonding layer 50;
  • the package body 60 which is formed by curing the packaging material, encapsulates the power chip 10, encapsulates a part of the lead frame 20 and a part of the metal sheet 30; the back side of the metal sheet 30 is not encapsulated by the package body 60, and the back side of the metal sheet 30
  • the package body 60 is exposed; a part of the first pin 22 is not encapsulated by the package body 60 , and a part of the first pin 22 is exposed to the package body 60 .
  • the base island 21 is used as the carrier of the power chip 10
  • the first pin 22 is used to connect the second electrode with the external circuit
  • the exposed part of the metal sheet 30 is used not only to connect the first electrode to the external circuit, but also to directly connect the second electrode to the external circuit. Conducts heat to the external medium of the package structure.
  • first pin 22 is exposed to the package body 60, either one end of the first pin 22 protrudes from the package body 60, or a surface of the first pin 22 is exposed to the package body 60; the metal sheet 30 In addition to exposing the back, other parts can also be exposed.
  • the backside of the metal sheet 30 can be welded to the circuit board 80 , and the first pin 22 can be welded to the circuit board 80 , so as to realize the first electrode and the circuit board 80 .
  • the first electrode needs to be connected to the pins of the lead frame 20 through metal wires or metal bridges, so as to be externally led out through the pins.
  • the method of disposing the metal sheet 30 in the area of the first electrode is adopted, which can realize the external lead of the first electrode to the external circuit carrier through the metal sheet 30.
  • the electrical conduction path can be shortened to reduce resistance and heat dissipation; and, the heat generated by the power chip 10 can be directly and quickly dissipated through the exposed part of the metal sheet 30 without the need for Guided by the pins, the heat conduction path can be shortened, the heat conduction efficiency is improved, and the heat dissipation efficiency is high; in addition, the metal sheet 30 has a large area, the area of the metal sheet 30 is equal to that of the first electrode, and the contact area between the metal sheet 30 and the first electrode Large, it can increase the conduction area of heat and electricity, and increase the conduction channel, thereby greatly reducing the resistance, reducing the heat consumption, and improving the heat dissipation efficiency, thereby improving the heat dissipation performance.
  • the heat dissipation performance is at least affected by resistance and heat dissipation efficiency.
  • the power device packaging structure of the present application improves heat dissipation performance and reliability; and can reduce the number of metal wires and pins and save materials.
  • the front surface of the metal sheet 30 covers 70% to 100% of the electrode area of the first electrode.
  • the metal sheet 30 may be, but not limited to, a copper sheet.
  • the conductive bonding layer 50 is formed by curing a conductive bonding material, the first electrode or the metal sheet 30 is covered with the conductive bonding material, and the first electrode and the metal sheet 30 are bonded by welding or bonding.
  • the bonding material may be one or more of lead-tin-silver alloy, gold-silicon alloy, and silver paste, or other bonding materials, and the composition of the bonding material is not a limitation of the present invention.
  • the power device package structure includes one or two or more power chips 10 .
  • the number of power chips 10 is one or two.
  • the number of power chips 10 in the package structure may also be multiple, such as four, six, etc.
  • multiple power chips 10 may be included in the package structure of an intelligent power module.
  • the power chip 10 can use a triode chip 11.
  • the first side of the triode chip 11 is provided with a source electrode 111 and a gate electrode 112
  • the second side is provided with a drain electrode
  • the first side and the second side are provided with a source electrode 111 and a gate electrode 112. for the opposite sides.
  • the package structure uses the source electrode 111 as the first electrode, sets the metal sheet 30 on the source electrode 111, and uses the drain electrode as the second electrode; or, the package structure uses the drain electrode as the first electrode, and sets the metal sheet 30 on the drain electrode,
  • the source electrode 111 is used as the second electrode.
  • the power chip 10 can also use a diode chip 12.
  • the package structure includes the diode chip 12
  • the first surface of the diode chip 12 is provided with an anode
  • the second surface is provided with a cathode
  • the first surface and the second surface are opposite sides.
  • the package structure uses the anode as the first electrode, sets the metal sheet 30 on the anode, and uses the cathode as the second electrode; or the package structure uses the cathode as the first electrode, sets the metal sheet 30 on the cathode, and uses the anode as the second electrode.
  • Embodiment 1 The power device packaging structure includes a power chip 10 , and the power chip 10 is a triode chip 11 .
  • the first side of the triode chip 11 faces the front side of the metal sheet 30
  • the source electrode 111 serves as the first electrode
  • the source electrode 111 is bonded to the front side of the metal sheet 30 through the conductive bonding layer 50 .
  • Embodiment 2 The power device package structure includes two power chips 10 , both of which are triode chips 11 .
  • the first surfaces of the two triode chips 11 are both facing the front side of the metal sheet 30 , and the source electrodes 111 are used as the first electrodes, and the source electrodes 111 are combined with the metal sheet 30 .
  • triode chip 11 may also use the source electrode 111 as the first electrode, and the other triode chip 11 may use the drain electrode as the first electrode.
  • Embodiment 3 The power device package structure includes two power chips 10 , one of which is a triode chip 11 and the other power chip 10 is a diode chip 12 .
  • the diode chip 12 When the power device packaging structure is applied to power electronic equipment, the diode chip 12 has the functions of forward conduction and reverse cut-off. The cooperation of the triode chip 11 and the diode chip 12, when the gate 112 is closed, due to inductance and the like The reverse current generated by the reason can be cut off by the diode chip 12, so that the power device package structure can meet the working requirements of higher power.
  • the first surface of the triode chip 11 faces the metal sheet 30 , the source electrode 111 serves as the first electrode, and the source electrode 111 is combined with the metal sheet 30 .
  • Embodiment 4 The power device package structure includes two power chips 10 , both of which are diode chips 12 .
  • the source electrode 111 is preferably used as the first electrode for the triode chip 11, the source electrode 111 is welded to the metal sheet 30 downward, and the drain electrode is upwardly welded to the base island 21 of the lead frame 20.
  • the drain is soldered down to the metal sheet 30, and the source 111 is soldered to the base island 21
  • the power chip 10 is provided with the source 111
  • the drain can be directly combined with the base island 21 by means of conductive bonding materials such as spot soldering, which makes the packaging more convenient.
  • the triode chip 11 described in this application may be, but is not limited to, a MOSFET chip; the triode chip 11 is a switching device.
  • the power device packaging structure of the present application can achieve heat dissipation in at least the following two ways:
  • the power device package structure is a double-sided heat dissipation structure, and the side of the base island 21 away from the power chip 10 is exposed outside the package body 60 ; in this way, a part of the heat
  • the exposed part of the metal sheet 30 at the bottom of the package structure can be dissipated to the outside, and a part of the heat can be dissipated to the outside through the exposed part of the base island 21 at the top of the package structure.
  • the power device packaging structure is a single-sided heat dissipation structure, and the base island 21 is completely enclosed inside the package body 60 .
  • the single-side heat dissipation power device packaging structure is adopted, the packaging cost is relatively low, and the heat dissipation performance has been improved compared with the traditional packaging structure.
  • the lead frame 20 further includes a second pin 23 electrically insulated from the base island 21 , the gate 112 is electrically connected to the second pin 23 through the electrical connector 40 , and the gate 112 is led out through the second pin 23 , to realize the connection between the gate 112 and the external circuit.
  • the electrical connector 40 may be, but not limited to, conductive metal wires or conductive metal bridges, such as copper wires, copper bridges, and the like.
  • the package structure further includes a metal conductive sheet
  • the gate 112 is bonded to the front surface of the conductive sheet through the conductive bonding layer 50
  • the back of the conductive sheet exposes the package body 60
  • the gate 112 is directly pulled out through the conductive sheet to realize the gate 112 Connection to external circuits.
  • the conductive sheet can be, but not limited to, a copper sheet. Both the conductive sheet and the metal sheet 30 are exposed from the bottom of the package body 60 .
  • the number of the metal sheets 30 is the same as the number of the power chips 10; the first electrodes of each power chip 10 are connected to a The metal sheets 30 are combined.
  • the power device packaging structure includes two power chips 10 and two metal sheets 30; the two metal sheets 30 are respectively a first metal sheet and a second metal sheet; One electrode is bonded to the first metal sheet through the conductive bonding layer 50 , and the first electrode of the other power chip 10 is bonded to the second metal sheet through the conductive bonding layer 50 .
  • two independent metal sheets 30 may be used to respectively implement the external lead of the two first electrodes.
  • each device group includes two power chips 10 and a metal sheet 30 ; in each device group, the first electrodes of the two power chips 10 are connected to the metal Sheet 30 combined.
  • the power device packaging structure includes two power chips 10 ; the two first electrodes are bonded to the same metal sheet 30 through a conductive bonding layer 50 .
  • the same metal sheet 30 is directly used for external lead, which can satisfy the external heat dissipation of the two power chips 10, and there is no need to specially use metal wires or metal
  • the bridge connects the two first electrodes, and the packaging process is simple.
  • the single-chip structure includes a power chip 10, and the power chip 10 is a triode chip 11; it is a double-sided heat dissipation structure.
  • the single-chip structure includes a power chip 10, and the power chip 10 is a triode chip 11; it is a single-sided heat dissipation structure.
  • the dual-chip structure includes two power chips 10, both of which are triode chips 11; it is a double-sided heat dissipation structure, including two metal sheets 30 .
  • the dual-chip structure includes two power chips 10, both of which are triode chips 11; it is a single-sided heat dissipation structure, including two metal sheets 30 .
  • the dual-chip structure includes two power chips 10, both of which are triode chips 11; it is a double-sided heat dissipation structure, and the two power chips 10 share the same A sheet of metal 30.
  • the dual-chip structure includes two power chips 10, both of which are triode chips 11; it is a single-sided heat dissipation structure, and the two power chips 10 share the same A sheet of metal 30.
  • the two-chip structure includes two power chips 10, one of which is a triode chip 11, and the other power chip 10 is a diode chip 12; it is double-sided
  • the heat dissipation structure includes two metal sheets 30 .
  • the dual-chip structure includes two power chips 10, one of which is a triode chip 11, and the other power chip 10 is a diode chip 12; it is a single-sided
  • the heat dissipation structure includes two metal sheets 30 .
  • the two-chip structure includes two power chips 10, one power chip 10 is a triode chip 11, and the other power chip 10 is a diode chip 12; it is double-sided In the heat dissipation structure, the two power chips 10 share one metal sheet 30 .
  • the dual-chip structure includes two power chips 10, one of which is a triode chip 11, and the other power chip 10 is a diode chip 12; it is a single-sided In the heat dissipation structure, the two power chips 10 share one metal sheet 30 .
  • the dual-chip structure includes two power chips 10, both of which are diode chips 12; it is a double-sided heat dissipation structure, including two metal chips slice 30.
  • the dual-chip structure includes two power chips 10, both of which are diode chips 12; it is a single-sided heat dissipation structure, including two metal chips slice 30.
  • the dual-chip structure includes two power chips 10, and the two power chips 10 are both diode chips 12; it is a double-sided heat dissipation structure, and the two power chips 10 share a piece of metal 30 .
  • the two-chip structure includes two power chips 10, and the two power chips 10 are both diode chips 12; it is a double-sided heat dissipation structure, and the two power chips 10 share a piece of metal 30 .
  • the present application also proposes a power electronic device, which has better heat dissipation performance, working performance and higher reliability.
  • the power electronic device includes the power device packaging structure in the above embodiment, and further includes a circuit board 80 , the back of the metal sheet 30 is welded to the circuit board 80 , and the pins are welded to the circuit board 80 .
  • the power electronic device may be, but not limited to, a driver, a frequency converter, an inverter power supply, an air conditioner, and the like.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention porte sur une structure d'encapsulation de dispositif d'alimentation et sur un dispositif électronique d'alimentation. La structure d'encapsulation de dispositif d'alimentation comprend : une grille de connexion comprenant un îlot de base et une première broche connectée électriquement à l'îlot de base ; une pièce métallique ; une puce de puissance, une première électrode et une seconde électrode étant disposées sur deux côtés opposés de la puce de puissance respectivement, la première électrode étant liée au côté avant de la pièce métallique au moyen d'une couche de liaison conductrice, et la seconde électrode étant liée à l'îlot de base au moyen d'une couche de liaison conductrice ; et un emballage, encapsulant la puce de puissance, une partie de la grille de connexion et une partie de la pièce métallique, le côté arrière de la pièce métallique étant exposé à partir de l'emballage, et une partie de la première broche étant exposée à partir de l'emballage. Le dispositif électronique de puissance comprend la structure d'encapsulation de dispositif d'alimentation décrite. Dans la structure d'encapsulation de dispositif électrique, la pièce métallique est disposée sur l'électrode sur un côté de la puce de puissance et la pièce métallique est exposée, raccourcissant le trajet de conduction de chaleur électrique, agrandissant le canal de conduction de chaleur électrique, améliorant la performance de dissipation de chaleur, et améliorant la fiabilité du produit. Le dispositif électronique d'alimentation présente de bonnes performances.
PCT/CN2021/101671 2020-12-15 2021-06-22 Structure d'encapsulation de dispositif d'alimentation et dispositif électronique d'alimentation WO2022127060A1 (fr)

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CN202011483308.8A CN112701094A (zh) 2020-12-15 2020-12-15 一种功率器件封装结构及电力电子设备
CN202011483308.8 2020-12-15

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Cited By (1)

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WO2024051228A1 (fr) * 2022-09-09 2024-03-14 苏州汇川控制技术有限公司 Dispositif d'alimentation et appareil d'alimentation

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CN112701094A (zh) * 2020-12-15 2021-04-23 杰群电子科技（东莞）有限公司 一种功率器件封装结构及电力电子设备
CN117293116A (zh) * 2023-11-15 2023-12-26 深圳市信展通电子股份有限公司 一种增强散热的半导体封装结构和生产方法

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