WO2022124030A1 - Filtre optique - Google Patents
Filtre optique Download PDFInfo
- Publication number
- WO2022124030A1 WO2022124030A1 PCT/JP2021/042289 JP2021042289W WO2022124030A1 WO 2022124030 A1 WO2022124030 A1 WO 2022124030A1 JP 2021042289 W JP2021042289 W JP 2021042289W WO 2022124030 A1 WO2022124030 A1 WO 2022124030A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- refractive index
- silicon
- optical filter
- silicon hydride
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 45
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 54
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 23
- 229910052786 argon Inorganic materials 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 150000003376 silicon Chemical class 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 238000005984 hydrogenation reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000002835 absorbance Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
Definitions
- the present invention relates to an optical filter capable of selectively transmitting light in a specific wavelength range.
- an optical filter capable of selectively transmitting light in a specific wavelength range has been widely used in applications such as infrared sensors.
- a bandpass filter using a multilayer film is known.
- the multilayer film a high-refractive index film having a relatively high refractive index and a low-refractive index film having a relatively low refractive index are alternately and repeatedly laminated (for example, Patent Document 1).
- Patent Document 1 describes silicon hydride as a material for a high refractive index film.
- silicon nitride is described as a material for the low refractive index film. It is described that the silicon hydride film is formed by vapor deposition by plasma CVD (PECVD) using silane gas.
- An object of the present invention is to provide an optical filter capable of effectively increasing the transmittance.
- the optical filter according to the present invention is an optical filter having a silicon hydride-containing film, and is characterized in that the spin density of silicon hydride is 1.0 ⁇ 10 18 pieces / cm 2 or less.
- a filter unit consisting of a transparent substrate and a multilayer film provided on one main surface of the transparent substrate and having a high refractive index film having a relatively high refractive index and a low refractive index film having a relatively low refractive index.
- the high-refractive index film is a silicon hydride-containing film.
- the low refractive index film is a silicon oxide-containing film.
- an antireflection film provided on the other main surface of the transparent substrate and containing silicon hydride is further provided.
- FIG. 1 is a schematic cross-sectional view showing an optical filter according to the first embodiment of the present invention.
- 2 (a) and 2 (c) are schematic views showing an example of a bonding state between a Si atom and an H atom, and
- FIG. 2 (d) is a schematic diagram showing a Si dangling bond.
- FIG. 3 is a diagram showing the relationship between the spin density of hydrogenated silicon and the absorbance k.
- FIG. 4 is a diagram showing the relationship between the spin density of hydrogenated silicon and the transmittance.
- FIG. 5 is a schematic cross-sectional view showing an optical filter according to a second embodiment of the present invention.
- FIG. 1 is a schematic cross-sectional view showing an optical filter according to the first embodiment of the present invention.
- the optical filter 1 includes a transparent substrate 2 and a filter unit 3.
- the optical filter 1 is not particularly limited, but is used, for example, in a sensor such as LiDAR.
- the shape of the transparent substrate 2 is not particularly limited, but in the present embodiment, it is a rectangular plate.
- the thickness of the transparent substrate 2 can be, for example, 30 ⁇ m or more and 2 mm or less.
- the transparent substrate 2 is preferably a transparent substrate in the wavelength range used by the optical filter 1.
- the material of the transparent substrate 2 is not particularly limited, and examples thereof include glass and resin. Further, if the wavelength range used is an infrared region, it may be Si, Ge, or the like. Examples of the glass include soda-lime glass, borosilicate glass, non-alkali glass, crystallized glass, quartz glass and the like. Further, the glass used for the transparent substrate 2 may be aluminosilicate glass used as tempered glass.
- the transparent substrate 2 has a first main surface 2a as one side main surface and a second main surface 2b as the other side main surface.
- the first main surface 2a and the second main surface 2b face each other.
- a filter unit 3 is provided on the first main surface 2a of the transparent substrate 2.
- the filter unit 3 is a multilayer film having a high refractive index film 4 having a relatively high refractive index and a low refractive index film 5 having a relatively low refractive index.
- the low-refractive index film 5 and the high-refractive index film 4 are alternately provided on the first main surface 2a of the transparent substrate 2 in this order to form a multilayer film.
- the high refractive index film 4 is a film containing hydrogenated silicon.
- the high refractive index film 4 is preferably a silicon hydride film.
- the material of the high refractive index film 4 is not limited to the above as long as it contains silicon hydride, and may contain Al, Ti, Nb, Ta, Zr, N, C and the like as elements.
- the low refractive index film 5 is made of silicon oxide.
- the material of the low refractive index film 5 is not limited to the above, and may be aluminum oxide, titanium oxide, niobium oxide, tantalum oxide, zirconium oxide, tin oxide, silicon nitride and the like.
- the low refractive index film 5 is preferably a silicon oxide-containing film.
- the thickness of the high-refractive index film 4 per layer is preferably 10 nm or more, and more preferably 15 nm or more. On the other hand, the thickness of the high refractive index film 4 per layer is preferably 1000 nm or less, more preferably 750 nm or less.
- the thickness of the low refractive index film 5 per layer is preferably 10 nm or more, and more preferably 20 nm or more. On the other hand, the thickness of the low refractive index film 5 per layer is preferably 500 nm or less, more preferably 300 nm or less.
- the number of layers of the film constituting the multilayer film in the filter unit 3 is preferably 16 or more, and more preferably 20 or more. On the other hand, the number of layers of the film constituting the multilayer film in the filter unit 3 is preferably 50 or less, and more preferably 40 or less.
- the optical filter 1 of the present embodiment is a bandpass filter designed to selectively transmit light in a specific wavelength range by light interference by providing a filter unit 3 composed of such a multilayer film. ..
- the center wavelength of the pass band (transmission band) is designed to be 800 nm to 1000 nm.
- the central wavelength of the transmission band may be outside the range of 800 nm to 1000 nm.
- the feature of this embodiment is that in the high refractive index film 4 which is a silicon hydride-containing film, the spin density of silicon hydride is 1.0 ⁇ 10 18 pieces / cm 2 or less. That is, the inventors of the present application can effectively suppress the absorption of light in the silicon hydride-containing film when the amount of Si dangling bonds in the silicon hydride-containing film is small, and even when the silicon hydride-containing film is used. , It has been found that the transmittance of the optical filter 1 can be effectively increased. Details will be described below.
- FIGS. 2 (a) to 2 (c) are schematic views showing an example of a bonded state between a Si atom and an H atom.
- FIG. 2D is a schematic diagram showing a Si dangling bond. In the part omitted in FIGS. 2 (a) and 2 (d), the Si atom is bonded to another Si atom. In FIG. 2D, the portion showing an electron is schematically shown as an electron orbital.
- the silicon hydride-containing film includes the portion in the bonded state shown in FIGS. 2 (a) and 2 (d).
- one H atom is bonded to the Si atom.
- two H atoms are bonded to the Si atom.
- three H atoms are bonded to the Si atom.
- the Si atom is bonded to an H atom or another Si atom, and all the valence electrons of the Si atom are used for the bond.
- the silicon hydride-containing film also includes a portion in which all the valence electrons of the Si atom are used for bonding with other Si atoms.
- the H atom is not bonded to the Si atom, and the unpaired electron e exists.
- a portion not used for bonding is a Si dangling bond.
- the spin density of silicon hydride is a value that quantitatively indicates Si dangling bonds. The smaller the spin density of silicon hydride, the less Si dangling bonds.
- the spin density of silicon hydride can be measured by the electron spin resonance method (ESR).
- ESR electron spin resonance method
- the spin density of silicon hydride may be measured, for example, for each layer of the silicon hydride-containing film.
- the filter unit or the like may collectively perform the measurement by ESR. In this case, the spin density of silicon hydride in all the silicon hydride-containing films in the optical filter can be obtained at once.
- the filter portion 3 as a multilayer film is formed on the first main surface 2a of the transparent substrate 2.
- the filter portion 3 can be formed by alternately laminating the low refractive index film 5 and the high refractive index film 4 on the first main surface 2a of the transparent substrate 2 in this order.
- the high refractive index film 4 and the low refractive index film 5 can each be formed by a sputtering method.
- the silicon hydride-containing film which is the high refractive index film 4 may be formed by reactive sputtering using argon gas and hydrogen gas, or by hydrogenating the formed silicon film after forming the silicon film. good.
- a silicon hydride-containing film may be formed by forming a silicon film by a sputtering method and then hydrogenating the silicon film using RF plasma.
- the film formation of the silicon film can be performed, for example, by using a silicon target, setting the flow rate of an inert gas such as argon gas as a sputtering gas to 100 sccm to 500 sccm, and setting the target applied power to 2 kW to 10 kW.
- the hydrogenation of the silicon film can be performed with the flow rate of an inert gas such as argon gas as a sputtering gas set to 100 sccm to 500 sccm, the flow rate of hydrogen gas set to 5 sccm to 200 sccm, and the RF power set to 1 kW to 5 kW. ..
- the flow rate ratio (Ar / H 2 ) of the argon (Ar) gas to the hydrogen (H 2 ) gas is preferably 0.83 or more, more preferably 0.96 or more, and 1.4 or more. It is even more preferable, and it is even more preferable that it is 2.4 or more. Thereby, the spin density of the hydrogenated silicon in the obtained silicon hydride-containing film can be further lowered.
- the upper limit of the flow rate ratio (Ar / H 2 ) is not particularly limited, but may be, for example, 10.
- the temperature of the transparent substrate 2 when the high refractive index film 4 is formed can be, for example, 15 ° C. or higher and 300 ° C. or lower.
- the transmittance of the optical filter can be increased. This is shown by comparing Examples and Comparative Examples.
- Example 1 First, a glass substrate was prepared as a transparent substrate. Next, a filter portion was formed on the first main surface of the transparent substrate. The filter portion was formed by alternately laminating a low refractive index film and a high refractive index film on the first main surface of the transparent substrate in this order. The high refractive index film and the low refractive index film were each formed by a sputtering method.
- the silicon hydride film which is a high refractive index film, was formed by forming a silicon film by a sputtering method and then hydrogenating the silicon film using RF plasma.
- a silicon target was used in the film formation of the silicon film, the flow rate of the argon gas sputtered was set to 300 sccm, and the applied power of the target was set to 10 kW.
- the flow rate of argon gas as a sputtering gas was 170 sccm
- the flow rate of hydrogen gas was 30 sccm
- the RF plasma power was 2.5 kW.
- a silicon oxide film (SiO 2 film) was formed as a low refractive index film.
- Argon gas and oxygen gas were used as the sputtering gas, and the silicon target was sputtered to form a SiO 2 film.
- the flow rate of argon gas was set to 300 sccm, and the flow rate of oxygen gas was set to 120 sccm.
- the target applied power was set to 10 kW.
- the temperature of the transparent substrate was set to 25 ° C. when the SiO 2 film and the hydrogenated silicon film were formed.
- the SiO 2 film and the hydrogenated silicon film were alternately laminated on the transparent substrate. As a result, a filter portion having a total of 29 layers of film was formed. From the above, the optical filter of Example 1 was obtained.
- Example 2 An optical filter was produced in the same manner as in Example 1 except for the flow rate of the sputtering gas in the formation of the silicon hydride film. Specifically, in the formation of the silicon hydride film, the flow rate of the argon gas as the sputtering gas was set to 290 sccm in the film formation of the silicon film. In the hydrogenation of the silicon film, the flow rate of argon gas as a sputtering gas was 120 sccm, and the flow rate of hydrogen gas was 10 sccm.
- Example 3 An optical filter was produced in the same manner as in Example 1 except for the flow rate of the sputtering gas in the formation of the silicon hydride film. Specifically, in the formation of the silicon hydride film, the flow rate of the argon gas as the sputtering gas was set to 330 sccm in the film formation of the silicon film. In the hydrogenation of the silicon film, the flow rate of argon gas as a sputtering gas was 84 sccm, and the flow rate of hydrogen gas was 6 sccm.
- Example 4 An optical filter was produced in the same manner as in Example 1 except for the flow rate of the sputtering gas in the formation of the silicon hydride film. Specifically, in the formation of the silicon hydride film, the flow rate of the argon gas as the sputtering gas was set to 360 sccm in the film formation of the silicon film. In the hydrogenation of the silicon film, the flow rate of argon gas as a sputtering gas was set to 56 sccm, and the flow rate of hydrogen gas was set to 4 sccm.
- Example 1 An optical filter was produced in the same manner as in Example 1 except for the flow rate of the sputtering gas in the formation of the silicon hydride film. Specifically, in the formation of the silicon hydride film, the flow rate of the argon gas as the sputtering gas was set to 370 sccm in the film formation of the silicon film. In the hydrogenation of the silicon film, the flow rate of argon gas as a sputtering gas was 47 sccm, and the flow rate of hydrogen gas was 3 sccm.
- Example 2 An optical filter was produced in the same manner as in Example 1 except for the flow rate of the sputtering gas in the formation of the silicon hydride film. Specifically, in the formation of the silicon hydride film, the flow rate of the argon gas as the sputtering gas was set to 380 sccm in the film formation of the silicon film. In the hydrogenation of the silicon film, the flow rate of argon gas as a sputtering gas was 38 sccm, and the flow rate of hydrogen gas was 2 sccm.
- Table 1 shows the layer structure of the filter unit in each Example and each Comparative Example.
- SiO 2 indicates a low refractive index film made of a SiO 2 film
- Si: H indicates a high refractive index film made of a silicon hydride film
- glass indicates a transparent substrate.
- the spin density of hydrogenated silicon in the optical filters of each example and each comparative example was measured by ESR. Further, the refractive index n, the absorbance k and the transmittance of each optical filter at a wavelength of 940 nm were measured. These results are shown in Table 2. Further, the relationship between the spin density of hydrogenated silicon and the absorbance k and the transmittance is shown in FIGS. 3 and 4. Each plot of FIGS. 3 and 4 shows the results of each example and each comparative example.
- FIG. 3 is a diagram showing the relationship between the spin density of hydrogenated silicon and the absorbance k.
- FIG. 4 is a diagram showing the relationship between the spin density of hydrogenated silicon and the transmittance.
- FIG. 5 is a schematic cross-sectional view showing an optical filter according to a second embodiment of the present invention.
- the antireflection film 6 is provided on the second main surface 2b of the transparent substrate 2.
- Other points are the same as those of the first embodiment.
- the antireflection film 6 is a multilayer film having a high refractive index film 7 having a relatively high refractive index and a low refractive index film 8 having a relatively low refractive index.
- the low refractive index film 8 and the high refractive index film 7 are alternately provided on the second main surface 2b of the transparent substrate 2 in this order to form a multilayer film.
- the high refractive index film 7 is made of silicon hydride.
- the material of the high refractive index film 7 is not limited to this.
- the low refractive index film 8 is made of silicon oxide.
- aluminum oxide, tantalum oxide, niobium oxide, titanium oxide, hafnium oxide, silicon nitride, zirconium oxide, and tin oxide may be used.
- the number of layers of the film constituting the multilayer film of the antireflection film 6 is preferably 10 or more. On the other hand, the number of layers of the film constituting the multilayer film of the antireflection film 6 is preferably 40 or less.
- the spin density of silicon hydride is 1.0 ⁇ 10 18 pieces / cm 2 or less. Therefore, the transmittance in the optical filter 21 can be increased as in the first embodiment.
- the spin density of the silicon hydride is preferably 1.0 ⁇ 10 18 pieces / cm 2 or less. In this case, the transmittance of the optical filter 21 can be increased more reliably and effectively.
- Optical filter 1a Main surface 2 ... Transparent substrate 2a ... First main surface 2b ... Second main surface 3 ... Filter unit 4 ... High refractive index film 5 ... Low refractive index film 6 ... Antireflection film 7 ... High Refractive index film 8 ... Low refractive index film 21 ... Optical filter
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- Optics & Photonics (AREA)
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- Surface Treatment Of Optical Elements (AREA)
Abstract
L'invention concerne un filtre optique avec lequel la transmittance peut être efficacement augmentée. Un filtre optique 1 selon la présente invention a un film contenant un silicium hydrogéné, et est caractérisé par le silicium hydrogéné ayant une densité de spins inférieure ou égale à 1,0 × 1018/cm2.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2020-205756 | 2020-12-11 | ||
JP2020205756A JP2022092825A (ja) | 2020-12-11 | 2020-12-11 | 光学フィルタ |
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WO2022124030A1 true WO2022124030A1 (fr) | 2022-06-16 |
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PCT/JP2021/042289 WO2022124030A1 (fr) | 2020-12-11 | 2021-11-17 | Filtre optique |
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WO (1) | WO2022124030A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114859454A (zh) * | 2022-07-06 | 2022-08-05 | 宁波永新光学股份有限公司 | 一种用于车载激光雷达视窗的黑色光学滤波器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5398133A (en) * | 1993-10-27 | 1995-03-14 | Industrial Technology Research Institute | High endurance near-infrared optical window |
JPH10217377A (ja) * | 1997-02-05 | 1998-08-18 | Japan Aviation Electron Ind Ltd | 誘電体多層膜 |
JP2009035780A (ja) * | 2007-08-02 | 2009-02-19 | Sfc:Kk | 水素化アモルファスシリコンの製造方法及び製膜装置 |
CN109932773A (zh) * | 2017-12-19 | 2019-06-25 | 张家港康得新光电材料有限公司 | 一种可见光截止膜、其制备方法和应用 |
-
2020
- 2020-12-11 JP JP2020205756A patent/JP2022092825A/ja active Pending
-
2021
- 2021-11-17 WO PCT/JP2021/042289 patent/WO2022124030A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5398133A (en) * | 1993-10-27 | 1995-03-14 | Industrial Technology Research Institute | High endurance near-infrared optical window |
JPH10217377A (ja) * | 1997-02-05 | 1998-08-18 | Japan Aviation Electron Ind Ltd | 誘電体多層膜 |
JP2009035780A (ja) * | 2007-08-02 | 2009-02-19 | Sfc:Kk | 水素化アモルファスシリコンの製造方法及び製膜装置 |
CN109932773A (zh) * | 2017-12-19 | 2019-06-25 | 张家港康得新光电材料有限公司 | 一种可见光截止膜、其制备方法和应用 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114859454A (zh) * | 2022-07-06 | 2022-08-05 | 宁波永新光学股份有限公司 | 一种用于车载激光雷达视窗的黑色光学滤波器 |
CN114859454B (zh) * | 2022-07-06 | 2022-10-18 | 宁波永新光学股份有限公司 | 一种用于车载激光雷达视窗的黑色光学滤波器 |
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