JP7494861B2 - 光学フィルタ及びその製造方法 - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 36
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 32
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 24
- 150000003376 silicon Chemical class 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 16
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 claims description 15
- 238000001237 Raman spectrum Methods 0.000 claims description 14
- 238000001069 Raman spectroscopy Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 9
- 238000001678 elastic recoil detection analysis Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 claims description 8
- 238000004611 spectroscopical analysis Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 description 20
- 239000011521 glass Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
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Description
(光学フィルタ)
図1は、本発明の第1の実施形態に係る光学フィルタを示す模式的断面図である。図1に示すように、光学フィルタ1は、透明基板2と、フィルタ部3とを備える。
まず、透明基板2を用意する。次に、透明基板2の第1の主面2a上に多層膜としてのフィルタ部3を形成する。フィルタ部3は、透明基板2の第1の主面2a上に、高屈折率膜4及び低屈折率膜5をこの順に交互に積層することにより形成することができる。高屈折率膜4及び低屈折率膜5は、それぞれ、スパッタリング法により形成することができる。
図3は、本発明の第2の実施形態に係る光学フィルタを示す模式的断面図である。光学フィルタ21では、透明基板2の第2の主面2b上に反射防止膜6が設けられている。その他の点は、第1の実施形態と同様である。
まず、透明基板としてガラス基板を用意した。次に、キャリアガスとしてアルゴン(Ar)ガスを用い、シリコンのターゲットをスパッタリングし、ガラス基板の一方側主面上にシリコン膜を成膜した。なお、この際、アルゴンガスの流量を150sccmした。ターゲット印加電力(成膜電力)は、10kWとした。次に、キャリアガスとして水素(H2)ガス及びアルゴン(Ar)ガスを用い、RFプラズマを用いて、シリコン膜を水素化し、水素化シリコン膜を形成した。なお、この際、水素(H2)ガスの流量を50sccmとし、アルゴン(Ar)ガスの流量を200sccmとした。RFプラズマ印加電力は、2.5kWとした。
別途、上記と同様の方法で、ガラス基板上に、水素化シリコン膜を成膜し、ラマン分光法によりラマンスペクトルを測定した。得られたSiHに由来するピークの面積とSiH2に由来するピークの面積との比から、比(SiH/SiH2)を求めたところ、1.02であった。
別途、上記と同様の方法で、ガラス基板上に、水素化シリコン膜を成膜し、水素原子含有量とシリコン原子含有量との比(H/Si)を求めたところ、0.25であった。
反跳角度:30度
ストッパーフォイル:アルミ6μm厚
検出器立体角:1.4mSr
照射量:20μC
散乱角度:165度
検出器立体角:0.64mSr
照射量:20μC
基板温度、シリコン膜成膜時の成膜電力、RFプラズマによる水素化時の水素(H2)ガスの流量、及びRFプラズマ印加電力を下記の表2のように変更したこと以外は、実施例1と同様にして第2の光学フィルタを得た。なお、いずれの場合においても、バンドパスフィルタとしての機能を有し、入射角が0°のときの透過帯域の中心波長が940nmとなるように設計した第2の光学フィルタを得た。
1a…主面
2…透明基板
2a…第1の主面
2b…第2の主面
3…フィルタ部
4,7…高屈折率膜
5,8…低屈折率膜
6…反射防止膜
Claims (7)
- 水素化シリコン含有膜を有する、光学フィルタであって、
ラマン分光法により測定した前記水素化シリコン含有膜のラマンスペクトルが、SiHに由来するピークと、SiH 2 に由来するピークとを有し、
前記水素化シリコン含有膜の前記ラマンスペクトルにおいて、SiHに由来するピークの面積とSiH2に由来するピークの面積との比から求めた比(SiH/SiH2)が、1.15以上である、光学フィルタ。 - 水素化シリコン含有膜を有する、光学フィルタであって、
水素前方散乱分光法により測定した前記水素化シリコン含有膜における水素原子含有量と、ラザフォード後方散乱分光法により測定した前記水素化シリコン含有膜におけるシリコン原子含有量との比(H/Si)が、0.4以下である、請求項1に記載の光学フィルタ。 - 透明基板と、
前記透明基板の一方側主面上に設けられており、かつ相対的に屈折率が高い高屈折率膜及び相対的に屈折率が低い低屈折率膜を有する多層膜からなるフィルタ部と、
を備え、
前記高屈折率膜が、前記水素化シリコン含有膜である、請求項1又は2に記載の光学フィルタ。 - 前記低屈折率膜が、酸化ケイ素含有膜である、請求項3に記載の光学フィルタ。
- 前記透明基板の他方側主面上に設けられており、かつ水素化シリコンを含む反射防止膜をさらに備える、請求項3又は4に記載の光学フィルタ。
- 水素化シリコン含有膜を有し、ラマン分光法により測定した前記水素化シリコン含有膜のラマンスペクトルにおいて、SiHに由来するピークの面積とSiH 2 に由来するピークの面積との比から求めた比(SiH/SiH 2 )が、0.7以上である、光学フィルタの製造方法であって、
スパッタリング法によりシリコン膜を成膜する工程と、
前記シリコン膜を成膜する工程の後に、キャリアガスとして水素ガス及びアルゴンガスのみを用いて、前記シリコン膜を水素化する工程と、
を備え、
前記水素ガスの前記アルゴンガスに対する流量比(H 2 /Ar)が、0.02以上、0.5以下である、光学フィルタの製造方法。 - 前記水素ガスの前記アルゴンガスに対する流量比(H 2 /Ar)が、0.02以上、0.125以下である、請求項6に記載の光学フィルタの製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019223923 | 2019-12-11 | ||
JP2019223922 | 2019-12-11 | ||
JP2019223923 | 2019-12-11 | ||
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