JP7498220B2 - 改良された透過率を有する近赤外線光学干渉フィルタ - Google Patents
改良された透過率を有する近赤外線光学干渉フィルタ Download PDFInfo
- Publication number
- JP7498220B2 JP7498220B2 JP2022079468A JP2022079468A JP7498220B2 JP 7498220 B2 JP7498220 B2 JP 7498220B2 JP 2022079468 A JP2022079468 A JP 2022079468A JP 2022079468 A JP2022079468 A JP 2022079468A JP 7498220 B2 JP7498220 B2 JP 7498220B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- interference filter
- layers
- layer stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title description 14
- 238000002834 transmittance Methods 0.000 title description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 53
- 229910052757 nitrogen Inorganic materials 0.000 claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims description 14
- 229910052682 stishovite Inorganic materials 0.000 claims description 14
- 229910052905 tridymite Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 5
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000013461 design Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- -1 Ta2O5 Chemical compound 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000521 electronic sputter etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00634—Production of filters
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optical Filters (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Description
本願は、米国仮特許出願第62/107,112号(2015年1月23日出願)に対する優先権を主張し、上記出願の全体は、参照により本明細書に完全に引用される。
以下の開示は、光学技術分野、光学フィルタ技術分野、および関連技術分野に関する。
例えば、本願は以下の項目を絵提供する。
(項目1)
干渉フィルタであって、前記干渉フィルタは、層スタックを備え、前記層スタックは、
少なくとも、
水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層と
の複数の層を備え、
前記1つ以上の誘電材料の層は、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層を含む、干渉フィルタ。
(項目2)
前記1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、またはTiO2を備えている1つ以上の層を含む、項目1に記載の干渉フィルタ。
(項目3)
前記1つ以上の誘電材料の層は、SiO2層をさらに含む、項目2に記載の干渉フィルタ。
(項目4)
前記層スタックは、800~1100nm(それらの値を含む)の範囲内の通過帯域中心波長を有するように構成されている、項目1-3のいずれか1項に記載の干渉フィルタ。
(項目5)
前記層スタックは、750~1100nm(それらの値を含む)の範囲内の通過帯域中心波長を有するように構成されている、項目1-3のいずれか1項に記載の干渉フィルタ。
(項目6)
前記層スタックを支持する透明基板をさらに備えている、項目1-5のいずれか1項に記載の干渉フィルタ。
(項目7)
前記透明基板は、ガラス基板を備えている、項目6に記載の干渉フィルタ。
(項目8)
前記層スタックは、透明基板の片側の第1の層スタックと、前記透明基板の反対側の第2の層スタックとを含む、項目6-7のいずれか1項に記載の干渉フィルタ。
(項目9)
前記第1の層は、低域通過カットオフ波長を伴う低域通過フィルタを画定し、前記第2の層スタックは、高域通過カットオフ波長を伴う高域通過フィルタを画定し、前記干渉フィルタは、前記高域通過カットオフ波長と前記低域通過カットオフ波長との間に画定された通過帯域を有する、項目8に記載の干渉フィルタ。
(項目10)
前記層スタックを基板上に配置することを含む動作によって、項目1-9のいずれか1項に記載の干渉フィルタを製作することを含む方法。
(項目11)
前記配置することは、少なくともケイ素系スパッタリング標的を使用して、スパッタリングすることを含む、項目10に記載の方法。
(項目12)
干渉フィルタであって、前記干渉フィルタは、層スタックを備え、前記層スタックは、
少なくとも、
水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層と
の複数の層を備え、
前記1つ以上の誘電材料の層は、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層を含む、干渉フィルタ。
(項目13)
前記1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、またはTiO2を備えている1つ以上の層を含む、項目12に記載の干渉フィルタ。
(項目14)
前記1つ以上の誘電材料の層は、SiO2層をさらに含む、項目12-13のいずれか1項に記載の干渉フィルタ。
(項目15)
前記層スタックは、水素化非晶質ケイ素の介在層を伴わずに、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層に直接隣接する少なくとも1つのSiO2層を含む、項目14に記載の干渉フィルタ。
の使用は、これを
として書かれることを可能にする。したがって、角度シフト効果は、層の小さな屈折率nLによって悪化させられることが分かる。
Claims (9)
- 干渉フィルタであって、前記干渉フィルタは、
透明基板と、
前記透明基板によって支持されている層スタックと
を備え、
前記層スタックは、複数の層を備え、
前記複数の層は、
水素化非晶質ケイ素の層であって、前記水素化非晶質ケイ素は、窒素を含み(a-Si:H,N)、前記水素化非晶質ケイ素は、2%~8%の水素および3%~7%の窒素の原子濃度を有する、水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層であって、前記1つ以上の誘電材料の層は、1.9以上かつ2.7以下の範囲内の屈折率を有する誘電材料の層を含み、前記屈折率は、750nm以上かつ1100nm以下の波長を有する光に対するものである、1つ以上の誘電材料の層と
を少なくとも含む、干渉フィルタ。 - 前記1つ以上の誘電材料の層は、SiO2層をさらに含む、請求項1に記載の干渉フィルタ。
- 前記層スタックは、750nm以上かつ1100nm以下の範囲内の通過帯域中央波長を有するように構成されている、請求項1または請求項2に記載の干渉フィルタ。
- 1.9以上かつ2.7以下の範囲内の屈折率を有する前記誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、または、TiO2を備えている1つ以上の層を含む、請求項1~3のうちのいずれか一項に記載の干渉フィルタ。
- 前記透明基板は、ガラス基板を含む、請求項1~4のうちのいずれか一項に記載の干渉フィルタ。
- 前記層スタックは、前記透明基板の一方の側の面上にある第1の層スタックと、前記透明基板の反対側の面上にある第2の層スタックとを含む、請求項1~5のうちのいずれか一項に記載の干渉フィルタ。
- 前記第1の層スタックは、低域通過カットオフ波長を伴う低域通過フィルタを画定し、前記第2の層スタックは、高域通過カットオフ波長を伴う高域通過フィルタを画定し、前記干渉フィルタは、前記高域通過カットオフ波長と前記低域通過カットオフ波長との間に画定された通過帯域を有する、請求項6に記載の干渉フィルタ。
- 前記第1の層スタックおよび前記第2の層スタックを前記透明基板上に堆積することを含む動作によって、請求項6~7のうちのいずれか一項に記載の干渉フィルタを製造することを含む方法。
- 前記堆積することは、少なくともシリコンベースのスパッタリング標的を用いてスパッタリングすることを含む、請求項8に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024088095A JP2024103644A (ja) | 2015-01-23 | 2024-05-30 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562107112P | 2015-01-23 | 2015-01-23 | |
US62/107,112 | 2015-01-23 | ||
JP2020104327A JP7075444B2 (ja) | 2015-01-23 | 2020-06-17 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020104327A Division JP7075444B2 (ja) | 2015-01-23 | 2020-06-17 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024088095A Division JP2024103644A (ja) | 2015-01-23 | 2024-05-30 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022097725A JP2022097725A (ja) | 2022-06-30 |
JP7498220B2 true JP7498220B2 (ja) | 2024-06-11 |
Family
ID=55361956
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017538363A Active JP6767983B2 (ja) | 2015-01-23 | 2016-01-22 | 改良された透過率を有する近赤外線光学干渉フィルタ |
JP2020104327A Active JP7075444B2 (ja) | 2015-01-23 | 2020-06-17 | 改良された透過率を有する近赤外線光学干渉フィルタ |
JP2022079468A Active JP7498220B2 (ja) | 2015-01-23 | 2022-05-13 | 改良された透過率を有する近赤外線光学干渉フィルタ |
JP2024088095A Pending JP2024103644A (ja) | 2015-01-23 | 2024-05-30 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017538363A Active JP6767983B2 (ja) | 2015-01-23 | 2016-01-22 | 改良された透過率を有する近赤外線光学干渉フィルタ |
JP2020104327A Active JP7075444B2 (ja) | 2015-01-23 | 2020-06-17 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024088095A Pending JP2024103644A (ja) | 2015-01-23 | 2024-05-30 | 改良された透過率を有する近赤外線光学干渉フィルタ |
Country Status (7)
Country | Link |
---|---|
US (1) | US9989684B2 (ja) |
EP (2) | EP3828604A1 (ja) |
JP (4) | JP6767983B2 (ja) |
KR (2) | KR20230028582A (ja) |
CN (2) | CN107209305B (ja) |
TW (1) | TWI647490B (ja) |
WO (1) | WO2016118919A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI756606B (zh) * | 2012-07-16 | 2022-03-01 | 美商唯亞威方案公司 | 光學濾波器及感測器系統 |
WO2016134122A1 (en) | 2015-02-18 | 2016-08-25 | Materion Corporation | Near infrared optical interference filters with improved transmission |
JP6374820B2 (ja) * | 2015-03-27 | 2018-08-15 | 株式会社豊田中央研究所 | 光学フィルタおよび光学測定装置 |
DE102017004828B4 (de) * | 2017-05-20 | 2019-03-14 | Optics Balzers Ag | Optischer Filter und Verfahren zur Herstellung eines optischen Filters |
US10782460B2 (en) | 2017-05-22 | 2020-09-22 | Viavi Solutions Inc. | Multispectral filter |
US11137527B2 (en) * | 2017-05-22 | 2021-10-05 | Viavi Solutions Inc. | Mixed spacer multispectral filter |
US10247865B2 (en) | 2017-07-24 | 2019-04-02 | Viavi Solutions Inc. | Optical filter |
JP6981074B2 (ja) * | 2017-07-25 | 2021-12-15 | Agc株式会社 | 光学素子 |
CN108998771A (zh) * | 2018-07-15 | 2018-12-14 | 厦门市诚安毅科技有限公司 | 基于高k电介质材料的薄膜电容的制备方法 |
CN110737040B (zh) * | 2018-07-18 | 2022-03-01 | 福州高意光学有限公司 | 3d识别滤光片 |
CN108761614A (zh) * | 2018-08-06 | 2018-11-06 | 信阳舜宇光学有限公司 | 滤光片及包含该滤光片的红外图像传感系统 |
CN108873135A (zh) * | 2018-08-06 | 2018-11-23 | 信阳舜宇光学有限公司 | 一种近红外窄带滤光片及红外成像系统 |
CN108897085B (zh) * | 2018-08-06 | 2024-07-16 | 信阳舜宇光学有限公司 | 滤光片及包含该滤光片的红外图像传感系统 |
CN110824599B (zh) * | 2018-08-14 | 2021-09-03 | 白金科技股份有限公司 | 一种红外带通滤波器 |
JP7251099B2 (ja) * | 2018-10-31 | 2023-04-04 | 日本電気硝子株式会社 | バンドパスフィルタ及びその製造方法 |
US11650361B2 (en) * | 2018-12-27 | 2023-05-16 | Viavi Solutions Inc. | Optical filter |
KR102068516B1 (ko) * | 2018-12-28 | 2020-01-21 | 주식회사 옵트론텍 | 광학 필터 |
US11314004B2 (en) * | 2019-04-08 | 2022-04-26 | Visera Technologies Company Limited | Optical filters and methods for forming the same |
CN110109210B (zh) * | 2019-06-05 | 2024-06-18 | 信阳舜宇光学有限公司 | 滤光片 |
KR102055579B1 (ko) * | 2019-06-27 | 2019-12-13 | 주식회사 옵트론텍 | 광학 필터 |
WO2023165725A1 (de) | 2022-03-01 | 2023-09-07 | Fhr Anlagenbau Gmbh | Verfahren zur herstellung eines optischen schichtsystems sowie ein damit hergestelltes optisches schichtsystem |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002223028A (ja) | 2001-01-24 | 2002-08-09 | Hitachi Ltd | 半導体発光装置 |
JP2003262720A (ja) | 2002-03-11 | 2003-09-19 | Nippon Telegr & Teleph Corp <Ntt> | 光学多層膜フィルタ |
US20040234198A1 (en) | 2003-03-21 | 2004-11-25 | Aegis Semiconductor, Inc. | Tunable and switchable multiple-cavity thin film optical filters |
US20140014838A1 (en) | 2012-07-16 | 2014-01-16 | Karen Denise Hendrix | Optical filter and sensor system |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04110803A (ja) * | 1990-08-31 | 1992-04-13 | Toshiba Glass Co Ltd | 近赤外線透過フィルタ |
JP3446835B2 (ja) * | 1991-03-27 | 2003-09-16 | Hoya株式会社 | ガラス光学素子用プレス成形型 |
US5398133A (en) * | 1993-10-27 | 1995-03-14 | Industrial Technology Research Institute | High endurance near-infrared optical window |
US5589042A (en) * | 1994-11-08 | 1996-12-31 | Hughes Aircraft Company | System and method for fabrication of precision optical ramp filters |
GB9708468D0 (en) * | 1997-04-25 | 1997-06-18 | Screen Tech Ltd | Collimator |
EP0982604B1 (en) * | 1998-08-26 | 2003-04-23 | Nippon Telegraph and Telephone Corporation | Method for manufacturing optical filter |
KR20040035708A (ko) * | 2001-08-02 | 2004-04-29 | 이지스 세미컨덕터 | 가변형 광학기기 |
US6572975B2 (en) * | 2001-08-24 | 2003-06-03 | General Electric Company | Optically coated article and method for its preparation |
US20040008968A1 (en) | 2002-07-09 | 2004-01-15 | L3 Optics, Inc. | Photosensitive optical glass |
JP2007183525A (ja) * | 2005-12-07 | 2007-07-19 | Murakami Corp | 誘電体多層膜フィルタ |
JP2007248562A (ja) * | 2006-03-14 | 2007-09-27 | Shincron:Kk | 光学物品およびその製造方法 |
US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US20080285165A1 (en) * | 2007-05-14 | 2008-11-20 | Wu Kuohua Angus | Thin film filter system and method |
US8314991B2 (en) * | 2008-10-31 | 2012-11-20 | Cpfilms Inc. | Variable transmission composite interference filter |
US9316766B2 (en) | 2011-05-17 | 2016-04-19 | Canon Denshi Kabushiki Kaisha | Optical filter, optical device, electronic device and anti-reflection composite |
WO2013015303A1 (ja) | 2011-07-28 | 2013-01-31 | 旭硝子株式会社 | 光学部材 |
JP5888124B2 (ja) | 2012-05-30 | 2016-03-16 | 株式会社ニデック | 多層膜フィルタ、及び多層膜フィルタの製造方法 |
JPWO2014033784A1 (ja) * | 2012-08-30 | 2016-08-08 | パイオニア株式会社 | 光学フィルターの製造方法 |
CN104412136B (zh) * | 2012-10-26 | 2017-07-25 | 京瓷株式会社 | 光学滤波器部件以及具备该光学滤波器部件的摄像装置 |
CN103018812B (zh) | 2012-12-17 | 2015-05-13 | 晋谱(福建)光电科技有限公司 | 用于体感识别系统的近红外窄带滤光片 |
CN104280806A (zh) * | 2013-07-12 | 2015-01-14 | 长春理工大学 | 超宽波段高截止窄带干涉滤光镜 |
WO2015155356A1 (en) | 2014-04-10 | 2015-10-15 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Solar photovoltaic module |
-
2016
- 2016-01-22 WO PCT/US2016/014618 patent/WO2016118919A1/en active Application Filing
- 2016-01-22 EP EP20209131.0A patent/EP3828604A1/en active Pending
- 2016-01-22 US US15/004,754 patent/US9989684B2/en active Active
- 2016-01-22 CN CN201680006986.0A patent/CN107209305B/zh active Active
- 2016-01-22 KR KR1020237005439A patent/KR20230028582A/ko not_active Application Discontinuation
- 2016-01-22 EP EP16704969.1A patent/EP3248032B1/en active Active
- 2016-01-22 CN CN202110207668.3A patent/CN112748488A/zh active Pending
- 2016-01-22 KR KR1020177023316A patent/KR102502192B1/ko active IP Right Review Request
- 2016-01-22 JP JP2017538363A patent/JP6767983B2/ja active Active
- 2016-01-25 TW TW105102217A patent/TWI647490B/zh active
-
2020
- 2020-06-17 JP JP2020104327A patent/JP7075444B2/ja active Active
-
2022
- 2022-05-13 JP JP2022079468A patent/JP7498220B2/ja active Active
-
2024
- 2024-05-30 JP JP2024088095A patent/JP2024103644A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002223028A (ja) | 2001-01-24 | 2002-08-09 | Hitachi Ltd | 半導体発光装置 |
JP2003262720A (ja) | 2002-03-11 | 2003-09-19 | Nippon Telegr & Teleph Corp <Ntt> | 光学多層膜フィルタ |
US20040234198A1 (en) | 2003-03-21 | 2004-11-25 | Aegis Semiconductor, Inc. | Tunable and switchable multiple-cavity thin film optical filters |
US20140014838A1 (en) | 2012-07-16 | 2014-01-16 | Karen Denise Hendrix | Optical filter and sensor system |
Non-Patent Citations (1)
Title |
---|
L. DOMASH et al.,Tunable and Switchable Multiple-Cavity Thin Film Filters,JOURNAL OF LIGHTWAVE TECHNOLOGY,米国,2004年01月,Vol.22, No.1,p.126 - 135,http://dx.doi.org/10.1109/JLT.2004.823349 |
Also Published As
Publication number | Publication date |
---|---|
TW201632920A (zh) | 2016-09-16 |
CN107209305B (zh) | 2021-03-16 |
KR20170106448A (ko) | 2017-09-20 |
JP2018504635A (ja) | 2018-02-15 |
KR20230028582A (ko) | 2023-02-28 |
CN112748488A (zh) | 2021-05-04 |
EP3828604A1 (en) | 2021-06-02 |
JP2024103644A (ja) | 2024-08-01 |
US9989684B2 (en) | 2018-06-05 |
EP3248032B1 (en) | 2020-11-25 |
KR102502192B9 (ko) | 2023-11-20 |
TWI647490B (zh) | 2019-01-11 |
US20160216419A1 (en) | 2016-07-28 |
JP2020149071A (ja) | 2020-09-17 |
JP6767983B2 (ja) | 2020-10-14 |
JP2022097725A (ja) | 2022-06-30 |
EP3248032A1 (en) | 2017-11-29 |
KR102502192B1 (ko) | 2023-02-21 |
JP7075444B2 (ja) | 2022-05-25 |
CN107209305A (zh) | 2017-09-26 |
WO2016118919A1 (en) | 2016-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7498220B2 (ja) | 改良された透過率を有する近赤外線光学干渉フィルタ | |
US20220299688A1 (en) | Near infrared optical interference filters with improved transmission | |
EP3467553B1 (en) | Optical filter and sensor system | |
CN111796353A (zh) | 光学滤波器及其形成方法 | |
US20190293850A1 (en) | Multispectral interference coating with diamond-like carbon (dlc) film | |
KR20240134050A (ko) | 개선된 투과를 갖는 근적외선 광학 간섭 필터 | |
TWI855290B (zh) | 光學濾波器及感測器系統 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230522 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230821 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240521 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240530 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7498220 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |