WO2022110509A1 - Procédé de détermination de type de glissement de dislocation - Google Patents

Procédé de détermination de type de glissement de dislocation Download PDF

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WO2022110509A1
WO2022110509A1 PCT/CN2021/000088 CN2021000088W WO2022110509A1 WO 2022110509 A1 WO2022110509 A1 WO 2022110509A1 CN 2021000088 W CN2021000088 W CN 2021000088W WO 2022110509 A1 WO2022110509 A1 WO 2022110509A1
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slip
sample
dislocation
different
type
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PCT/CN2021/000088
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English (en)
Chinese (zh)
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李阁平
张英东
袁福森
韩福洲
穆罕默德•阿里
郭文斌
任杰
刘承泽
顾恒飞
佟敏
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中国科学院金属研究所
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/40—Investigating hardness or rebound hardness
    • G01N3/42—Investigating hardness or rebound hardness by performing impressions under a steady load by indentors, e.g. sphere, pyramid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by using a combination of at least two measurements at least one being a transmission measurement and one a scatter measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/02—Details
    • G01N3/06—Special adaptations of indicating or recording means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0001—Type of application of the stress
    • G01N2203/0003—Steady
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0014—Type of force applied
    • G01N2203/0016—Tensile or compressive
    • G01N2203/0019—Compressive
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
    • G01N2203/0075—Strain-stress relations or elastic constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/0076—Hardness, compressibility or resistance to crushing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0098—Tests specified by its name, e.g. Charpy, Brinnel, Mullen
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/06—Indicating or recording means; Sensing means
    • G01N2203/0641—Indicating or recording means; Sensing means using optical, X-ray, ultraviolet, infrared or similar detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/06—Indicating or recording means; Sensing means
    • G01N2203/067—Parameter measured for estimating the property
    • G01N2203/0682—Spatial dimension, e.g. length, area, angle

Definitions

  • the invention belongs to the field of material analysis, in particular to a method for judging the type of dislocation slip through EBSD, Vickers hardness tester, tilt-scanning sample stage and Schmid theory.
  • deformation The deformation of the material when it is under load is called deformation, and the common deformation methods are mainly tension, compression, shear and torsion.
  • the two most common ways of deformation are dislocation slip and twinning.
  • dislocation slip often occurs in the vast majority of deformation processes, and is a particularly important deformation method. Slip in a crystal can only proceed along a certain crystal plane and a certain crystallographic direction on this plane, which we call the slip plane and the slip direction.
  • Common slips include cylinder slip, basal slip and cone slip.
  • dislocation slip is very important to study the formation mechanism of dislocation slip.
  • the most mainstream method for dislocation calibration is to calibrate by transmission, that is, to obtain different double-beam g-vectors by tilting the transmission sample rod, and then realize the calibration of dislocations.
  • this method requires high-end and expensive instruments (transmission electron microscope) to implement, the cost is high, and the popularity is not high.
  • transmission calibration is used, the operation is more complicated, and it is often difficult to calibrate complex dislocations, such as dislocation networks. Therefore, it is currently difficult to find an affordable, simple and convenient method to mark the type of misalignment slip. Therefore, it is very important to find a simple and convenient method to judge the type of dislocation slip.
  • the invention provides a method for judging the type of dislocation slip through EBSD, Vickers hardness tester, tilting scanning sample stage and Schmid theory, which is a simple, effective and accurate method for judging the type of dislocation slip.
  • a method for judging dislocation slip types characterized in that the specific steps are as follows:
  • the EBSD block sample is prepared by chemical light wiping corrosion method and slight mechanical vibration polishing method to ensure the flatness of the sample surface.
  • the preferred preparation method is: first mount the sample on the mounting machine, and then sequentially. Pre-grind with 150#, 320#, 800#, 2000# water sandpaper, after removing the deep scratches, perform mechanical polishing on the woolen cloth, the polishing liquid is SiO 2 nano-suspension, polishing for 6-10 minutes , to obtain a bright and traceless polished surface with a mirror effect; then etch, gently and quickly wipe the surface of the test sample with acid-stained cotton for 3-10 seconds, until the surface of the sample becomes bright; vibrate polishing on an automatic polishing machine , the polishing liquid is SiO 2 nano-suspension, polished for 10 minutes, and finally a bright and traceless polished surface with mirror effect was obtained.
  • the samples were rinsed with water and absolute ethanol in turn, and finally dried and stored.
  • step 2) the region to be measured is preferably marked with Vickers hardness on the surface of the sample, and the crystal orientation of the region is calibrated with EBSD technology.
  • step 3 a Vickers hardness tester is used to test the hardness of different crystal orientations in the region to be measured, and the diagonal size of the indentation and the hardness value are recorded.
  • the weight range of the Vickers hardness tester used is: 10-1000g.
  • different dislocation slip lines are obtained by applying weights of different weights, and at the same time, the propagation of slip lines between different crystal grains is obtained; and the quasi-in situ observation of dislocation slip can be realized by calibrating the crystal orientation function of EBSD.
  • the formation process of the line through the geometric force analysis of Vickers hardness indentation under different loads, the shear stress that forms the slip line is analyzed, and the Schmid factor of different dislocation slip is calculated based on the three-dimensional crystal structure calibrated by EBSD.
  • step 3 combined with the hardness test results, the geometric stress analysis of the indentation and the Schmid factor values at different slip starts, the first preliminary judgment of the dislocation slip types can be made, so as to exclude some dislocation slip types. .
  • the slip line comparison method is: matching and comparing the length direction of the slip line with the basal plane, cylindrical surface and cone surface of the three-dimensional crystal structure, combining the general direction of dislocation slip, the calculated The Schmid factor values of different slip systems and the angle of intersection between slip lines can preliminarily determine the type of dislocation slip.
  • step 5 after preliminarily judging the type of dislocation slip, set the sample rod on the scanning sample stage of the scanning electron microscope, then place the sample on the sample rod, first record the length direction of the slip line, and make the slip line
  • the length direction is perpendicular to the tilting direction of the scanning sample stage;
  • the sample rod is specially made, and its main body is a cylinder (the height is much larger than the radius of the bottom surface), and the lower end of the cylinder is provided with a threaded fastener that matches the scanning sample stage. It is used to install the sample rod on the scanning sample stage.
  • the upper end of the cylinder is provided with a sample stage.
  • the sample stage can be a plane or an inclined surface with a certain inclination. The inclination angle of the inclined surface ranges from -90° to 90°.
  • the tilt angle of the scanning sample stage of the SEM is only: -80 ⁇ 10°.
  • Installing a special sample rod on the scanning sample stage can increase the tilt angle range of the sample; that is, when the sample stage on the upper part of the sample rod is flat, The tilt angle of the sample is: -80 ⁇ 10°; when the sample stage on the upper part of the sample rod is inclined, the tilt direction of the sample can be tilted along the X-Y plane, the Y-Z plane and the X-Z plane or tilted simultaneously, which can increase the tilt of the scanned sample
  • the angle range is -90 ⁇ 90°.
  • the invention can also prepare transmission samples, and realize the determination of different dislocation types by TKD technology combined with dislocations observed by transmission electron microscope, combined with slip line comparison method, and tilted scanning electron microscope sample stage.
  • the inclination direction of the sample can be inclined along the X-Y plane, the Y-Z plane and the X-Z plane or inclined at the same time, which can increase the tilt angle range of the scanned sample (- 90 ⁇ 90°);
  • the determination of different dislocation types can also be realized by combining TKD technology with dislocations observed by transmission electron microscopy, combined with slip line comparison method.
  • ⁇ CRSS is the critical shear stress
  • ⁇ is the loading stress
  • m is the Schmidt factor.
  • Crystals with different orientations have different strengths, that is, their corresponding slip system activations are also different.
  • the easier the slip system is to be activated the larger the corresponding Schmid factor value, that is, the activation of the dislocation-slip system can be predicted by the Schmid factor theory.
  • the tilt angle range of the scanned sample can be increased (-90 ⁇ 90°).
  • ⁇ angle is the inclination of the X-Z plane direction
  • ⁇ angle is the inclination of the X-Y plane
  • ⁇ angle is the inclination of the Y-Z plane
  • Figure 5 is the actual picture of the sample rod with the top inclination of 70°, that is, when the sample is placed on the inclined plane
  • the tilt angles of the sample are: -90 to -60° and -10 to 80°.
  • Fig. 2 Schematic diagram of the change of the slip step when the sample stage is tilted and scanned.
  • Fig. 3 is a solid view of a flat sample rod.
  • Figure 4 is a schematic diagram of the sample rod with different angles of the top inclination.
  • Figure 5 is a solid view of the sample rod with a 70° inclination at the top.
  • Fig. 6 is a schematic diagram of the variation of the width of the slip step by theoretically judging.
  • FIG. 7 Schematic diagram of the principle of the slip line comparison method.
  • Fig. 9 The variation of the width of the slip line step and the theoretical comparison result when the SEM sample stage is tilted.
  • a method for judging the type of dislocation slip the specific steps are as follows:
  • the polishing liquid is SiO 2 nano-suspension, polish for 6-10 minutes to obtain a bright and traceless polished surface with mirror effect; then etch, gently and quickly wipe the surface of the test sample with acid-stained cotton for 3-10 seconds until the sample is The surface becomes brighter; vibration polishing is performed on an automatic polishing machine.
  • the polishing solution is a nano-suspension of SiO 2 , and polishing is performed for 10 minutes. Finally, a bright and trace-free polished surface with a mirror effect is obtained. Rinse the sample with water and anhydrous ethanol in turn. Finally dry and store.
  • the dislocation slip type is preliminarily determined, as shown in Figure 7;
  • the type of dislocation slip of the ⁇ 0001 ⁇ -oriented grains of the ⁇ -region as-quenched Zr-4 alloy was determined by the method described above.
  • Zr-4 alloy (Zr-1.5Sn-0.2Fe-0.1Cr) has very low thermal neutron absorption cross section, good mechanical properties and excellent corrosion resistance, mainly used in pressurized water reactor, boiling water reactor, heavy water reactor fuel cladding material.
  • the EBSD samples were prepared by wire-cutting samples, grinding, chemical light wiping corrosion and slight mechanical vibration polishing.
  • the morphology changes before and after the Vickers hardness indenter was observed by metallography and scanning electron microscope, and the crystal orientation was determined by EBSD and the calculation results of Schmid factor were shown in Figure 8. It can be seen from Figure 8 that the Schmid factor of base slip is greater than that of cone slip and cylinder slip.

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Abstract

L'invention concerne un procédé de détermination de type de glissement de dislocation, consistant : à fabriquer tout d'abord un échantillon de bloc à diffraction d'électrons rétrodiffusés (EBSD), à étalonner l'orientation cristalline par EBSD, et à utiliser des indenteurs de dureté Vickers ayant différentes charges pour comprimer, in situ, des grains mesurés par EBSD, des lignes de glissement, étant formées sur les surfaces des grains étant donné que les grains orientés sont déformés après la déformation par compression; à effectuer un essai de dureté sur différents grains d'une zone à mesurer et à calculer, en combinaison avec une analyse de contrainte géométrique pour indentation, des valeurs de facteur de Schmid lorsque différents systèmes de glissement sont activés; à déterminer de façon préliminaire un type de glissement, par comparaison des lignes de glissement avec une structure cristalline tridimensionnelle, en combinaison avec une direction de propagation d'une ligne de glissement de dislocation, les valeurs de facteur de Schmid calculées des différents systèmes de glissement et des angles formés par une intersection mutuelle entre les lignes de glissement; et enfin, à balayer une table d'échantillon par inclinaison sur un microscope électronique à balayage, à enregistrer un changement de largeur d'un pas de glissement pendant l'inclinaison à différents angles, à obtenir des changements théoriques de la largeur de pas de types de glissement différents en combinaison avec l'orientation cristalline mesurée par EBSD, puis par rapport au résultat expérimental, à déterminer complètement le type de glissement.
PCT/CN2021/000088 2020-11-30 2021-04-14 Procédé de détermination de type de glissement de dislocation WO2022110509A1 (fr)

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CN112611661B (zh) * 2020-11-30 2022-04-12 中国科学院金属研究所 一种判断位错滑移类型的方法
CN113203763B (zh) * 2021-06-04 2023-07-04 哈尔滨工业大学 一种利用极图分析的滑移线快速精确标定方法
CN113484351A (zh) * 2021-07-07 2021-10-08 中国航发北京航空材料研究院 一种表征β锻钛合金锻件屈服强度各向异性的方法
CN115183726B (zh) * 2022-09-13 2022-11-22 太原理工大学 木构件间相对转角及水平摩擦滑移量的测量装置及方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000424B2 (ja) * 2007-08-10 2012-08-15 一般財団法人電力中央研究所 炭化珪素単結晶ウェハの欠陥検出方法、及び炭化珪素半導体素子の製造方法
CN103175856A (zh) * 2013-03-17 2013-06-26 中国科学院苏州纳米技术与纳米仿生研究所 样品位错的扫描透射电镜成像方法
CN104569012A (zh) * 2015-01-19 2015-04-29 大连理工大学 一种确定多晶金属变形激活滑移系的方法
CN108333203A (zh) * 2018-02-09 2018-07-27 中国科学院地球化学研究所 一种原位检测矿物微区ebsd图像的方法
CN109142402A (zh) * 2018-09-28 2019-01-04 中国科学院金属研究所 一种多晶材料单个晶粒应力状态的tkd确定方法
CN110940686A (zh) * 2019-11-18 2020-03-31 中国科学院金属研究所 通过ebsd技术和维氏硬度计来计算孪晶临界分切应力的方法
CN112611661A (zh) * 2020-11-30 2021-04-06 中国科学院金属研究所 一种判断位错滑移类型的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784076B2 (en) * 2018-07-05 2020-09-22 Fei Company 3D defect characterization of crystalline samples in a scanning type electron microscope
CN110133022B (zh) * 2019-04-12 2021-12-21 中国科学院金属研究所 一种通过ebsd技术计算材料氧化膜底部晶面取向的方法
CN110940683A (zh) * 2019-11-18 2020-03-31 中国科学院金属研究所 通过维氏硬度计结合透射电镜实现原位压缩观察的方法
CN111999323A (zh) * 2020-08-13 2020-11-27 中国科学院金属研究所 一种镁合金再结晶晶粒微观取向演变的原位ebsd观察方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000424B2 (ja) * 2007-08-10 2012-08-15 一般財団法人電力中央研究所 炭化珪素単結晶ウェハの欠陥検出方法、及び炭化珪素半導体素子の製造方法
CN103175856A (zh) * 2013-03-17 2013-06-26 中国科学院苏州纳米技术与纳米仿生研究所 样品位错的扫描透射电镜成像方法
CN104569012A (zh) * 2015-01-19 2015-04-29 大连理工大学 一种确定多晶金属变形激活滑移系的方法
CN108333203A (zh) * 2018-02-09 2018-07-27 中国科学院地球化学研究所 一种原位检测矿物微区ebsd图像的方法
CN109142402A (zh) * 2018-09-28 2019-01-04 中国科学院金属研究所 一种多晶材料单个晶粒应力状态的tkd确定方法
CN110940686A (zh) * 2019-11-18 2020-03-31 中国科学院金属研究所 通过ebsd技术和维氏硬度计来计算孪晶临界分切应力的方法
CN112611661A (zh) * 2020-11-30 2021-04-06 中国科学院金属研究所 一种判断位错滑移类型的方法

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