WO2022109991A1 - 基板结构及其制备方法、发光器件及其制备方法 - Google Patents

基板结构及其制备方法、发光器件及其制备方法 Download PDF

Info

Publication number
WO2022109991A1
WO2022109991A1 PCT/CN2020/132135 CN2020132135W WO2022109991A1 WO 2022109991 A1 WO2022109991 A1 WO 2022109991A1 CN 2020132135 W CN2020132135 W CN 2020132135W WO 2022109991 A1 WO2022109991 A1 WO 2022109991A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
epitaxial
light
mask layer
Prior art date
Application number
PCT/CN2020/132135
Other languages
English (en)
French (fr)
Inventor
程凯
Original Assignee
苏州晶湛半导体有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 苏州晶湛半导体有限公司 filed Critical 苏州晶湛半导体有限公司
Priority to US18/253,382 priority Critical patent/US20230420605A1/en
Priority to PCT/CN2020/132135 priority patent/WO2022109991A1/zh
Priority to CN202080107232.0A priority patent/CN116583954A/zh
Publication of WO2022109991A1 publication Critical patent/WO2022109991A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the present disclosure relates to the technical field of semiconductors, and in particular, to a substrate structure and a method for preparing the substrate structure, a light-emitting device, and a method for preparing the light-emitting device.
  • LED Light Emitting Diode
  • the purpose of the present disclosure is to provide a substrate structure and a preparation method of the substrate structure, a light-emitting device and a preparation method of the light-emitting device, which can solve the problem that the substrate is difficult to peel off.
  • a substrate structure for a light emitting device comprising:
  • a mask layer disposed on the substrate, the mask layer is provided with an opening exposing the substrate;
  • An epitaxial structure is provided at the opening, and the material of the mask layer is different from that of the epitaxial structure.
  • the epitaxial structure extends out of the opening.
  • the numbers of the openings and the epitaxial structures are both multiple, the multiple epitaxial structures correspond to the multiple openings one-to-one, and the multiple openings and the multiple epitaxial structures are arranged at intervals.
  • the material of the substrate or the epitaxial structure is silicon, germanium or a silicon-germanium alloy.
  • the substrate is a monocrystalline substrate, and the off-angle of the substrate is 0°-8°.
  • the mask layer is a mirror.
  • a method for preparing a substrate structure comprising:
  • epitaxial growth is performed on the substrate to form an epitaxial structure, the epitaxial structure is arranged at the opening, and the material of the mask layer is different from the material of the epitaxial structure .
  • a method for preparing a substrate structure comprising:
  • the cross-sectional area of the epitaxial structure in a direction parallel to the substrate is smaller than the area of the substrate;
  • a portion of the oxide layer located on the upper surface of the epitaxial structure is removed to form a mask layer having openings exposing the epitaxial structure, the mask layer having a material different from that of the epitaxial structure.
  • a light emitting device comprising:
  • the light-emitting structure layer is disposed on the side of the epitaxial structure facing away from the substrate.
  • the light emitting structure layer protrudes from the epitaxial structure in a direction parallel to the substrate, and a portion of the light emitting structure layer protruding from the epitaxial structure faces the surface of the mask layer and the The substrate is disposed obliquely, and the area of the upper surface of the light emitting structure layer is larger than the area of the lower surface in contact with the epitaxial structure.
  • the included angle between the surface of the part of the light emitting structure layer extending out of the epitaxial structure facing the mask layer and the substrate is 20°-70°.
  • a method for fabricating a light-emitting device comprising:
  • the substrate structure is prepared by using the above-mentioned preparation method of the substrate structure
  • a light emitting structure layer is epitaxially grown on the epitaxial structure of the substrate structure.
  • preparation method also includes:
  • the substrate structure is removed.
  • the substrate structure and the preparation method of the substrate structure, the light-emitting device and the preparation method of the light-emitting device of the present disclosure during use, the surface of the epitaxial structure of the substrate structure facing away from the substrate is used to grow the light-emitting structure layer to form the light-emitting device; Since the mask layer is arranged on the substrate, and the epitaxial structure is arranged on the mask layer at the opening of the exposed substrate, the surface of the epitaxial structure facing away from the substrate is smaller than the area of the substrate, thereby reducing the size of the light emitting structure layer and the substrate.
  • the area of the contact surface of the structure makes the substrate structure easy to peel off, which solves the problem that the substrate is difficult to peel off; in the alternative, the light emitting structure layer is arranged on the side of the epitaxial structure facing away from the substrate, and the light emitting structure layer extends out of the epitaxial structure.
  • the part of the surface facing the mask layer is inclined to the substrate, which is conducive to the realization of total reflection of light and reduces the leakage of light.
  • FIG. 1 is a schematic diagram of a substrate and a mask layer of a substrate structure according to Embodiment 1 of the present disclosure
  • FIG. 2 is a schematic diagram of a substrate structure according to Embodiment 1 of the present disclosure.
  • FIG. 3 is a flowchart of a method for fabricating a substrate structure according to Embodiment 1 of the present disclosure
  • FIG. 4 is a schematic diagram of a substrate structure according to Embodiment 4 of the present disclosure.
  • FIG. 5 is a schematic diagram of a light-emitting device according to Embodiment 5 of the present disclosure.
  • FIG. 6 is a flowchart of a method for preparing a light-emitting device according to Embodiment 5 of the present disclosure
  • FIG. 7 is a flowchart of a method for preparing a substrate structure according to Embodiment 7 of the present disclosure
  • FIG. 8 is a schematic diagram after the completion of step S300 in the preparation method of the substrate structure according to the seventh embodiment of the present disclosure.
  • FIG. 9 is a schematic diagram after step S310 is completed in the method for preparing a substrate structure according to Embodiment 7 of the present disclosure.
  • step S320 is completed in the method for preparing a substrate structure according to Embodiment 7 of the present disclosure
  • step S330 is completed in the method for preparing a substrate structure according to Embodiment 7 of the present disclosure
  • FIG. 12 is a schematic diagram of a light-emitting device prepared based on the substrate structure of the seventh embodiment of the present disclosure.
  • Embodiment 1 of the present disclosure provides a substrate structure and a method for fabricating the substrate structure.
  • the substrate structure can be used for light emitting devices.
  • the light emitting device may be a light emitting diode (LED).
  • the substrate structure may include a substrate 1, a mask layer 2 and an epitaxial structure 3, wherein:
  • the mask layer 2 is provided on the substrate 1 .
  • the mask layer 2 is provided with openings 201 exposing the substrate 1 .
  • the epitaxial structure 3 is disposed at the opening 201 of the mask layer 2 .
  • the material of the mask layer 2 is different from the material of the epitaxial structure 3 .
  • the surface of the epitaxial structure 3 facing away from the substrate 1 is used to grow the light-emitting structure layer 4 to form a light-emitting device;
  • the epitaxial structure 3 is arranged on the mask layer 2 at the opening 201 exposing the substrate 1, so that the surface of the epitaxial structure 3 facing away from the substrate 1 is smaller than the area of the substrate 1, thereby reducing the difference between the light emitting structure layer 4 and the substrate structure.
  • the area of the contact surface makes the substrate structure easy to peel off, which solves the problem that the substrate 1 is difficult to peel off.
  • the material of the substrate 1 may be silicon.
  • the material of the substrate 1 may also be germanium, but the embodiment of the present disclosure is not limited thereto, and the material of the substrate 1 may also be Silicon-germanium alloy.
  • the substrate 1 is a monocrystalline substrate, and its off-angle is 0°-8°, such as 0°, 2°, 4°, 8°, etc. Based on this, the uneven growth of the (111) crystal plane of silicon can be solved The problem is reduced, defects such as domains and grain boundaries in the epitaxial structure 3 are reduced, and the quality is improved.
  • the mask layer 2 is provided on the substrate 1 .
  • the material of the mask layer 2 may be different from the material of the substrate 1 .
  • the material of the mask layer 2 can be silicon oxide, such as SiO 2 .
  • the mask layer 2 is provided with openings 201 . In the thickness direction of the mask layer 2 , the opening 201 penetrates the mask layer 2 .
  • the number of the openings 201 may be one, two, four or more. Taking a plurality of openings 201 as an example, the plurality of openings 201 are arranged at intervals. Since the opening 201 penetrates through the mask layer 2 , the substrate 1 is exposed through the opening 201 on the mask layer 2 .
  • the epitaxial structure 3 is provided at the opening 201 of the mask layer 2 .
  • the epitaxial structure 3 can be connected to the region of the substrate 1 exposed to the opening 201 .
  • the materials of the substrate 1 and the epitaxial structure 3 may be the same, or of course, may be different.
  • the material of the epitaxial structure 3 can also be silicon, germanium or silicon-germanium alloy.
  • the number of the epitaxial structures 3 may be the same as the number of the openings 201 on the mask layer 2 . Taking the number of the openings 201 on the mask layer 2 as multiple as an example, the number of the epitaxial structures 3 is also multiple. interval setting.
  • the epitaxial structure 3 can extend out of the opening 201 on the mask layer 2 .
  • the method for preparing a substrate structure according to the first embodiment of the present disclosure is used to prepare the above-mentioned substrate structure.
  • the preparation method of the substrate structure may include steps 100 to 110, wherein:
  • Step 100 forming a mask layer on a substrate, and the mask layer is provided with an opening for exposing the substrate.
  • Step 110 using the mask layer as a mask, perform epitaxial growth on the substrate to form an epitaxial structure, the epitaxial structure is provided at the opening, and the material of the mask layer is different from that of the epitaxial structure.
  • step 100 a mask layer is formed on a substrate, the mask layer having openings exposing the substrate.
  • step 100 may include: forming a dielectric material layer on a substrate 1 ; patterning the dielectric material layer to form a mask layer 2 , the mask layer 2 is provided with an opening 201 exposing the substrate 1 .
  • the embodiment of the present disclosure may pattern the dielectric material layer through a photolithography process, but the embodiment of the present disclosure is not limited thereto.
  • the material of the dielectric material layer is different from the material of the substrate 1 .
  • step 110 using the mask layer as a mask, epitaxial growth is performed on the substrate to form an epitaxial structure, the epitaxial structure is disposed at the opening, and the material of the mask layer is different from that of the epitaxial structure.
  • the substrate 1 may be epitaxially grown by atomic layer deposition.
  • the substrate 1 may also be epitaxially grown by chemical vapor deposition, but the embodiment of the present disclosure is not limited thereto. Since the material of the mask layer 2 is different from that of the epitaxial structure 3 , it is difficult for the epitaxial structure 3 to grow on the surface of the mask layer 2 .
  • the preparation method of the substrate structure provided in the first embodiment of the present disclosure and the substrate structure belong to the same inventive concept, and the descriptions of the relevant details and beneficial effects can be referred to each other, and will not be repeated.
  • the substrate structure and the preparation method of the substrate structure in the second embodiment of the present disclosure are substantially the same as the substrate structure and the preparation method of the substrate structure in the first embodiment of the present disclosure, except that the mask layer in the second embodiment of the present disclosure is a mirror.
  • the mask layer of the second embodiment of the present disclosure is a Bragg mirror.
  • the material of the Bragg mirror can be selected from TiO 2 /SiO 2 , SiO 2 /SiN, Ti 3 O 5 /SiO 2 , Ta 2 O 5 /SiO 2 , Ti 3 O 5 /Al 2 O 3 , ZrO 2 /SiO 2 or TiO 2 /Al 2 O 3 is a group of multi-period materials in the material group, but the embodiment of the present disclosure is not limited thereto.
  • the mask layer of the second embodiment is a reflective mirror, which can reflect light, so that the second embodiment does not need to peel off the substrate and the epitaxial structure, simplifies the preparation process, and also improves the performance of the light-emitting device. External quantum efficiency and luminous efficiency.
  • the substrate structure and the preparation method of the substrate structure in the third embodiment of the present disclosure are substantially the same as the substrate structure and the preparation method of the substrate structure in the second embodiment of the present disclosure, except that the mask layer in the second embodiment of the present disclosure is a metal mirror.
  • the metal mirror may be made of Ag, Ni/Ag/Ni, etc., but the embodiment of the present disclosure is not limited thereto.
  • the substrate structure and the preparation method of the substrate structure in Embodiment 4 of the present disclosure are substantially the same as the substrate structure and the preparation method of the substrate structure in any one of Embodiments 1 to 3 of the present disclosure, and the only difference is: as shown in FIG. 4 ,
  • the epitaxial structure 3 of the fourth embodiment of the present disclosure does not extend out of the opening 201 of the mask layer 2 .
  • the surface of the epitaxial structure 3 away from the substrate 1 may be flush with the surface of the mask layer 2 away from the substrate 1 , that is, the surface of the epitaxial structure 3 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2
  • the distance between is equal to the distance between the surface of the mask layer 2 facing away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2 .
  • the distance between the surface of the epitaxial structure 3 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2 may be smaller than the distance between the surface of the mask layer 2 away from the substrate 1 and the surface of the substrate 1 facing the mask layer 2 the distance between.
  • the fifth embodiment of the present disclosure provides a light-emitting device and a method for fabricating the light-emitting device.
  • the light emitting device may be a light emitting diode (LED).
  • the light-emitting device may include a light-emitting structure layer 4 and the substrate structure described in any one of the foregoing Embodiments 1 to 4.
  • the light emitting structure layer 4 may be disposed on the side of the epitaxial structure 3 in the substrate structure facing away from the substrate 1 .
  • the light emitted by the light-emitting structure layer 4 can be reflected by the mask layer 2, which reduces the absorption of light by the substrate 1 and improves the light-emitting device. luminous efficiency.
  • the light emitting structure layer 4 may include a first conductive type semiconductor layer 401 , an active layer 402 and a second conductive type semiconductor layer 403 which are stacked.
  • the active layer 402 may be at least one of a single quantum well structure, a multiple quantum well (MQW) structure, a quantum wire structure and a quantum dot structure. Taking the active layer 402 as an example of a multiple quantum well structure, the active layer 402 may include alternately arranged potential well layers and potential barrier layers.
  • the first conductivity type is different from the second conductivity type.
  • the first conductive type semiconductor layer 401 may be an N-type semiconductor layer, and the second conductive type semiconductor layer 403 may be a P-type semiconductor layer, but this is not particularly limited in this embodiment of the present disclosure. In addition, the first conductive type semiconductor layer 401 may be located on the side of the second conductive type semiconductor layer 403 close to the epitaxial structure 3 .
  • the N-type semiconductor layer is used to provide electrons
  • the P-type semiconductor layer is used to provide holes, so that electrons and holes are combined to emit light in the active layer 402 .
  • the N-type semiconductor layer and/or the P-type semiconductor layer may include Group III nitride materials.
  • the group III nitride material may be at least one of GaN, AlGaN, InGaN, and AlInGaN.
  • the N-type ions in the N-type semiconductor layer may be at least one of Si ions, Ge ions, Sn ions, Se ions or Te ions.
  • the P-type doping ions in the P-type semiconductor layer may be at least one of Mg ions, Zn ions, Ca ions, Sr ions or Ba ions.
  • the light emitting structure layer 4 extends out of the epitaxial structure 3 in a direction parallel to the substrate 1 , that is to say, the orthographic projection of the light emitting structure layer 4 on the substrate 1 is larger than that of the epitaxial structure 3 on the substrate 1 and the orthographic projection of the epitaxial structure 3 on the substrate 1 is located in the orthographic projection area of the light emitting structure layer 4 on the substrate 1 .
  • the surface of the light-emitting structure layer 4 extending from the epitaxial structure 3 facing the mask layer 2 is inclined to the substrate 1, and the area of the upper surface of the light-emitting structure layer 4 is larger than the area of the lower surface in contact with the epitaxial structure 3, so that there are It is beneficial to achieve total reflection of light and reduce light leakage.
  • the upper surface of the light-emitting structure layer 4 is the surface of the light-emitting structure layer 4 facing away from the substrate 1
  • the lower surface of the light-emitting structure layer 4 is the surface of the light-emitting structure layer 4 facing the substrate 1 .
  • the angle ⁇ between the surface of the light-emitting structure layer 4 extending from the epitaxial structure 3 facing the mask layer 2 and the substrate 1 may be 20°-70°, such as 20°, 36°, 55°, 60°, 70°, etc.
  • the part of the light emitting structure layer 4 extending out of the epitaxial structure 3 facing the mask layer 2 may be the first A portion of the conductive type semiconductor layer 401 protruding from the epitaxial structure 3 faces the surface of the mask layer 2 .
  • the light emitting device of the fifth embodiment of the present disclosure may further include a first electrode and a second electrode.
  • the first electrode may be electrically connected to the above-mentioned first conductive type semiconductor layer.
  • the second electrode may be electrically connected to the above-mentioned second conductive type semiconductor layer.
  • the method for preparing a light-emitting device in Embodiment 5 of the present disclosure is used to prepare the above-mentioned light-emitting device.
  • the preparation method of the light-emitting device may include steps 200 to 210, wherein:
  • step 200 the substrate structure is prepared by using the method for preparing the substrate structure described in any one of the foregoing Embodiments 1 to 4.
  • Step 210 epitaxially growing a light emitting structure layer on the epitaxial structure of the substrate structure.
  • step 210 taking the material of the first conductive type semiconductor layer 401 of the light emitting structure layer 4 including GaN as an example, in step 210 , due to the difference in bond energy, it is difficult for both Ga atoms and N atoms to be in the mask of the substrate structure. Nucleation on the layer 2 makes it difficult for the first conductive type semiconductor layer 401 to grow on the mask layer 2 .
  • the manufacturing method of the light-emitting device provided in the fifth embodiment of the present disclosure and the light-emitting device belong to the same inventive concept, and the description of the relevant details and beneficial effects can be referred to each other, and will not be repeated.
  • the preparation method of the light-emitting device and the light-emitting device in the sixth embodiment of the present disclosure is substantially the same as the preparation method of the light-emitting device and the light-emitting device in the fifth embodiment of the present disclosure, the only difference is that after the light-emitting structure layer is epitaxially grown on the epitaxial structure of the substrate structure,
  • the substrate structure can also be removed.
  • the substrate structure may be removed by a chemical etching stripping process. Taking the material of both the substrate and the epitaxial structure as silicon as an example, the etching solution used in the chemical etching and stripping process may be a mixed solution of hydrofluoric acid, nitric acid and acetic acid.
  • the method for preparing a substrate structure according to Embodiment 7 of the present disclosure may include steps 300 to 330, wherein:
  • Step 300 forming an epitaxial layer on a substrate.
  • Step 310 patterning the epitaxial layer to form an epitaxial structure, and the cross-sectional area of the epitaxial structure in a direction parallel to the substrate is smaller than the area of the substrate.
  • Step 320 forming an oxide layer on the surface of the substrate and the surface of the epitaxial structure.
  • Step 330 removing the part of the oxide layer located on the upper surface of the epitaxial structure to form a mask layer having openings exposing the epitaxial structure, and the material of the mask layer is different from that of the epitaxial structure.
  • the substrate, epitaxial structure, and mask layer of Embodiment 7 of the present disclosure are the same as the substrate, epitaxial structure, and mask layer of any one of Embodiments 1 to 4 of the present disclosure.
  • step 300 an epitaxial layer is formed on a substrate.
  • the material of the epitaxial layer 5 can be the same as the material of the substrate 1 , and of course, can also be different.
  • the material of the epitaxial layer 5 can be silicon, germanium or silicon-germanium alloy.
  • step 310 the epitaxial layer is patterned to form an epitaxial structure, and the cross-sectional area of the epitaxial structure in a direction parallel to the substrate is smaller than that of the substrate.
  • the present disclosure can pattern the epitaxial layer 5 through a photolithography process to form the epitaxial structure 3 .
  • the structure composed of the epitaxial layer 5 and the substrate 1 can also be used as the “substrate” commonly referred to by those in the art. " to pattern.
  • step 320 an oxide layer is formed on the surface of the substrate and the surface of the epitaxial structure.
  • the present disclosure can form an oxide layer 6 on the surface of the substrate 1 and the surface of the epitaxial structure 3 by oxidizing the substrate 1 and the epitaxial structure 3 and controlling the oxidation time.
  • the The material of the oxide layer 6 may be silicon oxide or the like.
  • the oxide layer 6 can also be deposited, such as vapor deposition, etc., based on this, the oxide layer 6 can be a multi-layer structure and can have light-reflecting properties.
  • the oxide layer 6 is formed on the surface of the epitaxial structure 3 , that is, the oxide layer 6 is formed on the upper surface and sidewalls of the epitaxial structure 3 .
  • step 330 a portion of the oxide layer located on the upper surface of the epitaxial structure is removed to form a mask layer having an opening exposing the epitaxial structure, and the material of the mask layer is different from that of the epitaxial structure.
  • the present disclosure may remove the portion of the oxide layer 6 on the upper surface of the epitaxial structure 3 by chemical vapor polishing (CMP) to form the mask layer 2 .
  • CMP chemical vapor polishing
  • FIG. 12 a light-emitting device formed based on the substrate structure of the seventh embodiment of the present disclosure is shown in FIG. 12 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种基板结构及基板结构的制备方法、发光器件及发光器件的制备方法，该基板结构可以包括衬底（1）、掩模层（2）以及外延结构（3）；该掩模层（2）设于衬底（1）上，设有暴露衬底（1）的开口（201）；该外延结构（3）设于掩模层（2）的开口（201）处；该掩模层（2）的材料与外延结构（3）的材料不同。

Description

基板结构及其制备方法、发光器件及其制备方法 技术领域
本公开涉及半导体技术领域，尤其涉及一种基板结构及基板结构的制备方法、发光器件及发光器件的制备方法。
背景技术
近年来，发光二极管(Light Emitting Diode，简称LED)作为新一代绿色光源，广泛应用于照明、背光、显示、指示等领域。
目前，在制备发光二极管的过程中，常常需要在衬底上外延生长发光结构层，以形成发光二极管。由于衬底会吸收发光结构层发出的光，导致发光二极管的发光效率降低，因而需要剥离衬底。然而，该衬底难以剥离。
发明内容
本公开的目的在于提供一种基板结构及基板结构的制备方法、发光器件及发光器件的制备方法，能够解决衬底难以剥离的问题。
根据本公开的一个方面，提供一种基板结构，用于发光器件，所述基板结构包括：
衬底；
掩模层，设于所述衬底上，所述掩模层设有暴露所述衬底的开口；
外延结构，设于所述开口处，所述掩模层的材料与所述外延结构的材料不同。
进一步地，所述外延结构伸出所述开口。
进一步地，所述开口和所述外延结构的数量均为多个，多个所述外延结构与多个所述开口一一对应，多个开口以及多个所述外延结构均间隔设置。
进一步地，所述衬底或所述外延结构的材料为硅、锗或硅-锗合金。
进一步地，所述衬底为偏晶向衬底，所述衬底的偏角为0°-8°。
进一步地，所述掩模层为反射镜。
根据本公开的一个方面，提供一种基板结构的制备方法，所述基板结构用于发光器件，所述制备方法包括：
在一衬底上形成掩模层，所述掩模层设有暴露所述衬底的开口；
以所述掩模层为掩模，对所述衬底进行外延生长，以形成外延结构，所述外延结构设于所述开口处，所述掩模层的材料与所述外延结构的材料不同。
根据本公开的一个方面，提供一种基板结构的制备方法，所述基板结构用于发光器件，所述制备方法包括：
在一衬底上形成外延层；
对所述外延层进行图案化，以形成外延结构，所述外延结构在平行于所述衬底的方向上的截面面积小于所述衬底的面积；
在所述衬底的表面以及所述外延结构的表面形成氧化层；
去除所述氧化层位于所述外延结构的上表面的部分，以形成具有暴露所述外延结构的开口的掩模层，所述掩模层的材料与所述外延结构的材料不同。
根据本公开的一个方面，提供一种发光器件，包括：
上述的基板结构；
发光结构层，设于所述外延结构背向所述衬底的一侧。
进一步地，所述发光结构层在平行于所述衬底的方向上伸出所述外延结构，且所述发光结构层伸出所述外延结构的部分面向所述掩模层的表面与所述衬底倾斜设置，所述发光结构层的上表面的面积大于与所述外延结构接触的下表面的面积。
进一步地，所述发光结构层伸出所述外延结构的部分面向所述掩模层的表面与所述衬底之间的夹角为20°-70°。
根据本公开的一个方面，提供一种发光器件的制备方法，包括：
采用上述的基板结构的制备方法制备基板结构；
在所述基板结构的所述外延结构上外延生长发光结构层。
进一步地，所述制备方法还包括：
去除所述基板结构。
本公开的基板结构及基板结构的制备方法、发光器件及发光器件的制备方法，在使用过程中，该基板结构的外延结构背向衬底的表面用于生长发光结构层，以形成发光器件；由于掩模层设于衬底上，外延结构设于掩模层上暴露衬底的开口处，从而使外延结构背向衬底的表面小于衬底的面积，进而减小了发光结构层与基板结构的接触面的面积，使基板结构易于剥离，解决了衬底难以剥离的问题；可选方案中，发光结构层设于外延结构背向衬底的一侧，且发光结构层伸出外延结构的部分面向掩模层的表面与衬底倾斜设置，有利于光线实现全反射，减少了光线的泄露。
附图说明
图1是本公开实施例一的基板结构的衬底与掩模层的示意图；
图2是本公开实施例一的基板结构的示意图；
图3是本公开实施例一的基板结构的制备方法的流程图；
图4是本公开实施例四的基板结构的示意图；
图5是本公开实施例五的发光器件的示意图；
图6是本公开实施例五的发光器件的制备方法的流程图；
图7是本公开实施例七的基板结构的制备方法的流程图；
图8是本公开实施例七的基板结构的制备方法中步骤S300完成后的示意图；
图9是本公开实施例七的基板结构的制备方法中步骤S310完成后的示意图；
图10是本公开实施例七的基板结构的制备方法中步骤S320完成后的示意图；
图11是本公开实施例七的基板结构的制备方法中步骤S330完成后的示意图；
图12是基于本公开实施例七的基板结构所制备的发光器件的示意图。
附图标记说明：1、衬底；2、掩模层；201、开口；3、外延结构；4、发光结构层；401、第一导电类型半导体层；402、有源层；403、第二导电类型半导体层；5、外延层；6、氧化层。
具体实施方式
这里将详细地对示例性实施方式进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施方式中所描述的实施方式并不代表与本公开相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本公开的一些方面相一致的装置的例子。
实施例一
本公开实施例一提供一种基板结构及基板结构的制备方法。该基板结构可以用于发光器件。该发光器件可以为发光二极管(LED)。如图1和图2所示，该基板结构可以包括衬底1、掩模层2以及外延结构3，其中：
该掩模层2设于衬底1上。该掩模层2设有暴露衬底1的开口201。该外延结构3设于掩模层2的开口201处。该掩模层2的材料与外延结构3的材料不同。
本公开实施例一的基板结构，在使用过程中，该外延结构3背向衬底1的表面用于生长发光结构层4，以形成发光器件；由于掩模层2设于衬底1上，外延结构3设于掩模层2上暴露衬底1的开口201处，从而使外延结构3背向衬底1的表面小于衬底1的面积，进而减小了发光结构层4与基板结构的接触面的面积，使基板结构易于剥离，解决了衬底1难以剥离的问题。
下面对本公开实施例一的基板结构的各部分进行详细说明：
如图1和图2所示，该衬底1的材料可以为硅，当然，该衬底1的材料还可以为锗，但本公开实施例不限于此，该衬底1的材料还可以为硅-锗合金。该衬底1为偏晶向衬底，其偏角为0°-8°，例如0°、2°、4°、8°等，基于此，可以解决硅的(111)晶面生长不平坦的问题，减少了外延结构3中相畴、晶界等缺陷，提高了品质。
如图1所示，该掩模层2设于衬底1上。该掩模层2的材料可以与衬底1的材料不同。举例而言，该掩模层2的材料可以为氧化硅，例如SiO 2。该掩模层2设有开口201。在掩模层2的厚度方向上，该开口201贯通掩模层2。该开口201的数量可以为一个、二个、四个或更多个。以开口201的数量为多个为例，多个开口201间隔设置。由于开口201贯通掩模层2，该衬底1通过掩模层2上的开口201暴露。
如图1和图2所示，该外延结构3设于掩模层2的开口201处。其中， 该外延结构3可以连接于衬底1暴露于开口201的区域。该衬底1与外延结构3的材料可以相同，当然，也可以不同。该外延结构3的材料也可以为硅、锗或硅-锗合金。该外延结构3的数量可以与掩模层2上开口201的数量相同。以掩模层2上开口201的数量为多个为例，该外延结构3的数量也为多个，多个外延结构3一一对应地设于多个开口201处，且多个外延结构3间隔设置。该外延结构3可以伸出掩模层2上的开口201。
本公开实施例一的基板结构的制备方法用于制备上述的基板结构。如图3所示，该基板结构的制备方法可以包括步骤100至步骤110，其中：
步骤100、在一衬底上形成掩模层，掩模层设有暴露衬底的开口。
步骤110、以掩模层为掩模，对衬底进行外延生长，以形成外延结构，外延结构设于开口处，掩模层的材料与外延结构的材料不同。
下面对本公开实施例一的基板结构的制备方法的各步骤进行详细说明：
在步骤100中，在一衬底上形成掩模层，掩模层设有暴露衬底的开口。
其中，步骤100完成后的结构如图1所示。举例而言，步骤100可以包括：在一衬底1上形成介质材料层；图案化介质材料层，以形成掩模层2，掩模层2设有暴露衬底1的开口201。其中，本公开实施例可以通过光刻工艺对介质材料层进行图案化，但本公开实施例不限于此。此外，该介质材料层的材料与衬底1的材料不同。
在步骤110中，以掩模层为掩模，对衬底进行外延生长，以形成外延结构，外延结构设于开口处，掩模层的材料与外延结构的材料不同。
其中，步骤110完成后的结构如图2所示。本公开实施例一可以通过原子层沉积法对衬底1进行外延生长，当然，也可以通过化学气相沉积法对衬底1进行外延生长，但本公开实施例不限于此。由于掩模层2的材料与外延结构3的材料不同，从而使外延结构3难以生长于掩模层2的表面。
此外，本公开实施例一提供的基板结构的制备方法与基板结构属于同一发明构思，相关细节及有益效果的描述可互相参见，不再进行赘述。
实施例二
本公开实施例二的基板结构及基板结构的制备方法与本公开实施例一的基板结构及基板结构的制备方法大致相同，区别仅在于：本公开实施例二的掩模层为反射镜。举例而言，本公开实施例二的掩模层为布拉格反射镜。该布拉格反射镜的材料可以选自于包括TiO 2/SiO 2、SiO 2/SiN、Ti 3O 5/SiO 2、Ta 2O 5/SiO 2、Ti 3O 5/Al 2O 3、ZrO 2/SiO 2或TiO 2/Al 2O 3等材料群组中的一组多周期材料，但本公开实施例不限于此。
与实施例一相比，本实施例二的掩模层为反射镜，其可以反射光线，从而使本实施例二无需剥离衬底和外延结构，简化了制备工艺，同时还提高了发光器件的外量子效率和发光效率。
实施例三
本公开实施例三的基板结构及基板结构的制备方法与本公开实施例二的基板结构及基板结构的制备方法大致相同，区别仅在于：本公开实施例二的掩模层为金属反射镜。该金属反射镜的材质可以为Ag、Ni/Ag/Ni等，但本公开实施例不限于此。
实施例四
本公开实施例四的基板结构及基板结构的制备方法与本公开实施例一至实施例三中任一实施例的基板结构及基板结构的制备方法大致相同，区别仅在于：如图4所示，本公开实施例四的外延结构3未伸出掩模层2的开口201。该外延结构3远离衬底1的表面可以与掩模层2远离衬底1的表面平齐，也就是说，该外延结构3远离衬底1的表面与衬底1面向掩模层2的表面之间的距离等于掩模层2远离衬底1的表面与衬底1面向掩模层2的表面之间的距离。当然，该外延结构3远离衬底1的表面与衬底1面向掩模层2的表 面之间的距离可以小于掩模层2远离衬底1的表面与衬底1面向掩模层2的表面之间的距离。
实施例五
本公开实施例五提供一种发光器件及发光器件的制备方法。该发光器件可以为发光二极管(LED)。如图5所示，该发光器件可以包括发光结构层4以及上述实施例一至实施例四中任一实施例所述的基板结构。该发光结构层4可以设于基板结构中的外延结构3背向衬底1的一侧。以上述的衬底1材料为硅且掩模层2为反射镜为例，该发光结构层4发出的光能够被掩模层2反射，减弱了衬底1对光的吸收，提高了发光器件的发光效率。
如图5所示，该发光结构层4可以包括层叠设置的第一导电类型半导体层401、有源层402以及第二导电类型半导体层403。该有源层402可以为单量子阱结构、多量子阱(MQW)结构、量子线结构和量子点结构中的至少一种。以有源层402为多量子阱结构为例，该有源层402可以包括交替设置的势阱层和势垒层。该第一导电类型与第二导电类型不同。该第一导电类型半导体层401可以为N型半导体层，该第二导电类型半导体层403可以为P型半导体层，但本公开实施例对此不做特殊限定。此外，该第一导电类型半导体层401可以位于第二导电类型半导体层403靠近外延结构3的一侧。该N型半导体层用于提供电子，该P型半导体层用于提供空穴，以使电子与空穴在有源层402中复合发光。该N型半导体层和/或P型半导体层可以包括Ⅲ族氮化物材料。该Ⅲ族氮化物材料可以为GaN、AlGaN、InGaN、AlInGaN中的至少一种。该N型半导体层中的N型离子可以为Si离子、Ge离子、Sn离子、Se离子或Te离子中的至少一种。该P型半导体层中的P型掺杂离子可以为Mg离子、Zn离子、Ca离子、Sr离子或Ba离子中的至少一种。
如图5所示，该发光结构层4在平行于衬底1的方向上伸出外延结构3，也就是说，发光结构层4在衬底1上的正投影大于外延结构3在衬底1上的正投影，且外延结构3在衬底1上的正投影位于发光结构层4在衬底1上的 正投影区域内。该发光结构层4伸出外延结构3的部分面向掩模层2的表面与衬底1倾斜设置，且发光结构层4的上表面的面积大于与外延结构3接触的下表面的面积，从而有利于光线实现全反射，减少了光线的泄露。其中，该发光结构层4的上表面为发光结构层4背向衬底1的表面，该发光结构层4的下表面为发光结构层4面向衬底1的表面。该发光结构层4伸出外延结构3的部分面向掩模层2的表面与衬底1之间的夹角α可以为20°-70°，例如20°、36°、55°、60°、70°等。此外，以第一导电类型半导体层401位于第二导电类型半导体层403靠近外延结构3的一侧为例，该发光结构层4伸出外延结构3的部分面向掩模层2的表面可以为第一导电类型半导体层401伸出外延结构3的部分面向掩模层2的表面。
当然，本公开实施例五的发光器件还可以包括第一电极和第二电极。该第一电极可以电连接于上述的第一导电类型半导体层。该第二电极可以电连接于上述的第二导电类型半导体层。
本公开实施例五的发光器件的制备方法用于制备上述的发光器件。如图6所示，该发光器件的制备方法可以包括步骤200至步骤210，其中：
步骤200、采用上述实施例一至实施例四中任一实施例所述的基板结构的制备方法制备基板结构。
步骤210、在基板结构的外延结构上外延生长发光结构层。
如图5所示，以发光结构层4的第一导电类型半导体层401的材料包括GaN为例，在步骤210中，由于键能的差异，Ga原子和N原子均难以在基板结构的掩模层2上成核，从而使第一导电类型半导体层401难以在掩模层2上生长。
此外，本公开实施例五提供的发光器件的制备方法与发光器件属于同一发明构思，相关细节及有益效果的描述可互相参见，不再进行赘述。
实施例六
本公开实施例六的发光器件及发光器件的制备方法与本公开实施例五的发光器件及发光器件的制备方法大致相同，区别仅在于：在基板结构的外延结构上外延生长发光结构层之后，还可以去除基板结构。本公开实施例可以采用化学腐蚀剥离工艺去除基板结构。以衬底和外延结构的材料均为硅为例，该化学腐蚀剥离工艺中所采用的腐蚀液可以为氢氟酸、硝酸、乙酸的混和液。
实施例七
如图7所示，本公开实施例七的基板结构的制备方法可以包括步骤300至步骤330，其中：
步骤300、在一衬底上形成外延层。
步骤310、对外延层进行图案化，以形成外延结构，外延结构在平行于衬底的方向上的截面面积小于衬底的面积。
步骤320、在衬底的表面以及外延结构的表面形成氧化层。
步骤330、去除氧化层位于外延结构的上表面的部分，以形成具有暴露外延结构的开口的掩模层，掩模层的材料与外延结构的材料不同。
本公开实施例七的衬底、外延结构以及掩模层与本公开实施例一至实施例四中任一实施例的衬底、外延结构以及掩模层均相同。
下面对本公开实施例七的基板结构的制备方法的各步骤进行详细说明：
在步骤300中，在一衬底上形成外延层。
如图8所示，该外延层5的材料可以与衬底1的材料相同，当然，也可以不同。该外延层5的材料可以为硅、锗或硅-锗合金。
在步骤310中，对外延层进行图案化，以形成外延结构，外延结构在平行于衬底的方向上的截面面积小于衬底的面积。
如图8和图9所示，本公开可以通过光刻工艺对外延层5进行图案化，以形成外延结构3。当然，本公开也可以将外延层5和衬底1组成的结构作为本领域人员通常所说的“衬底”，此处对外延层5进行图案化，即是对通常所说的“衬底”进行图案化。
在步骤320中，在衬底的表面以及外延结构的表面形成氧化层。
如图10所示，本公开可以通过对衬底1和外延结构3进行氧化，并通过控制氧化的时间，以在衬底1的表面以及外延结构3的表面形成氧化层6，基于此，该氧化层6的材料可以为氧化硅等。该氧化层6也可以沉积而成，例如气相沉积等，基于此，该氧化层6可以为多层结构，且可以具有反光性能。其中，在外延结构3的表面形成氧化层6，即在外延结构3的上表面和侧壁形成氧化层6。
在步骤330中，去除氧化层位于外延结构的上表面的部分，以形成具有暴露外延结构的开口的掩模层，掩模层的材料与外延结构的材料不同。
如图10和图11所示，本公开可以通过化学气相抛光(CMP)去除氧化层6位于外延结构3的上表面的部分，以形成掩模层2。
此外，基于本公开实施例七的基板结构形成的发光器件如图12所示。
以上所述仅是本公开的较佳实施方式而已，并非对本公开做任何形式上的限制，虽然本公开已以较佳实施方式揭露如上，然而并非用以限定本公开，任何熟悉本专业的技术人员，在不脱离本公开技术方案的范围内，当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施方式，但凡是未脱离本公开技术方案的内容，依据本公开的技术实质对以上实施方式所作的任何简单修改、等同变化与修饰，均仍属于本公开技术方案的范围内。

Claims (14)

  1. 一种基板结构，用于发光器件，其特征在于，所述基板结构包括：
    衬底(1)；
    掩模层(2)，设于所述衬底(1)上，所述掩模层(2)设有暴露所述衬底(1)的开口(201)；
    外延结构(3)，设于所述开口(201)处，所述掩模层(2)的材料与所述外延结构(3)的材料不同。
  2. 根据权利要求1所述的基板结构，其特征在于，所述外延结构(3)伸出所述开口(201)。
  3. 根据权利要求1所述的基板结构，其特征在于，所述开口(201)和所述外延结构(3)的数量均为多个，多个所述外延结构(3)与多个所述开口(201)一一对应，多个开口(201)以及多个所述外延结构(3)均间隔设置。
  4. 根据权利要求1所述的基板结构，其特征在于，所述衬底(1)或所述外延结构(3)的材料为硅、锗或硅-锗合金。
  5. 根据权利要求1所述的基板结构，其特征在于，所述衬底(1)为偏晶向衬底，所述衬底(1)的偏角为0°-8°。
  6. 根据权利要求1所述的基板结构，其特征在于，所述掩模层(2)为反射镜。
  7. 一种基板结构的制备方法，所述基板结构用于发光器件，其特征在于，所述制备方法包括：
    在一衬底(1)上形成掩模层(2)，所述掩模层(2)设有暴露所述衬底(1)的开口(201)；
    以所述掩模层(2)为掩模，对所述衬底(1)进行外延生长，以形成外延结构(3)，所述外延结构(3)设于所述开口(201)处，所述掩模层(2)的材料与所述外延结构(3)的材料不同。
  8. 根据权利要求7所述的基板结构的制备方法，其特征在于，所述掩模 层(2)为反射镜。
  9. 一种基板结构的制备方法，所述基板结构用于发光器件，其特征在于，所述制备方法包括：
    在一衬底(1)上形成外延层(5)；
    对所述外延层(5)进行图案化，以形成外延结构(3)，所述外延结构(3)在平行于所述衬底(1)的方向上的截面面积小于所述衬底(1)的面积；
    在所述衬底(1)的表面以及所述外延结构(3)的表面形成氧化层(6)；
    去除所述氧化层(6)位于所述外延结构(3)的上表面的部分，以形成具有暴露所述外延结构(3)的开口(201)的掩模层(2)，所述掩模层(2)的材料与所述外延结构(3)的材料不同。
  10. 一种发光器件，其特征在于，包括：
    权利要求1-6任一项所述的基板结构；
    发光结构层(4)，设于所述外延结构(3)背向所述衬底(1)的一侧。
  11. 根据权利要求10所述的发光器件，其特征在于，所述发光结构层(4)在平行于所述衬底(1)的方向上伸出所述外延结构(3)，且所述发光结构层(4)伸出所述外延结构(3)的部分面向所述掩模层(2)的表面与所述衬底(1)倾斜设置，所述发光结构层(4)的上表面的面积大于与所述外延结构(3)接触的下表面的面积。
  12. 根据权利要求11所述的发光器件，其特征在于，所述发光结构层(4)伸出所述外延结构(3)的部分面向所述掩模层(2)的表面与所述衬底(1)之间的夹角为20°-70°。
  13. 一种发光器件的制备方法，其特征在于，包括：
    采用权利要求7-9任一项所述的基板结构的制备方法制备基板结构；
    在所述基板结构的所述外延结构(3)上外延生长发光结构层(4)。
  14. 根据权利要求13所述的发光器件的制备方法，其特征在于，所述制备方法还包括：
    去除所述基板结构。
PCT/CN2020/132135 2020-11-27 2020-11-27 基板结构及其制备方法、发光器件及其制备方法 WO2022109991A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US18/253,382 US20230420605A1 (en) 2020-11-27 2020-11-27 Substrate structure, manufacturing method therefor, light-emitting device and manufacturing method therefor
PCT/CN2020/132135 WO2022109991A1 (zh) 2020-11-27 2020-11-27 基板结构及其制备方法、发光器件及其制备方法
CN202080107232.0A CN116583954A (zh) 2020-11-27 2020-11-27 基板结构及其制备方法、发光器件及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/132135 WO2022109991A1 (zh) 2020-11-27 2020-11-27 基板结构及其制备方法、发光器件及其制备方法

Publications (1)

Publication Number Publication Date
WO2022109991A1 true WO2022109991A1 (zh) 2022-06-02

Family

ID=81753800

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/132135 WO2022109991A1 (zh) 2020-11-27 2020-11-27 基板结构及其制备方法、发光器件及其制备方法

Country Status (3)

Country Link
US (1) US20230420605A1 (zh)
CN (1) CN116583954A (zh)
WO (1) WO2022109991A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060084245A1 (en) * 2004-10-18 2006-04-20 Shinichi Kohda Semiconductor device, semiconductor device production method, and substrate for the semiconductor device
CN1801498A (zh) * 2005-01-07 2006-07-12 北京大学 分立晶粒垂直结构的led芯片制备方法
CN101192635A (zh) * 2006-11-24 2008-06-04 杭州士兰明芯科技有限公司 网格状分立的发光二极管外延片及其制造方法
CN101872815A (zh) * 2009-04-21 2010-10-27 财团法人工业技术研究院 发光二极管结构与元件以及其制造方法
CN109950201A (zh) * 2019-03-25 2019-06-28 京东方科技集团股份有限公司 光电器件外延结构的制造方法
CN111048635A (zh) * 2019-12-27 2020-04-21 广东省半导体产业技术研究院 一种芯片制备方法与待剥离芯片结构

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060084245A1 (en) * 2004-10-18 2006-04-20 Shinichi Kohda Semiconductor device, semiconductor device production method, and substrate for the semiconductor device
CN1801498A (zh) * 2005-01-07 2006-07-12 北京大学 分立晶粒垂直结构的led芯片制备方法
CN101192635A (zh) * 2006-11-24 2008-06-04 杭州士兰明芯科技有限公司 网格状分立的发光二极管外延片及其制造方法
CN101872815A (zh) * 2009-04-21 2010-10-27 财团法人工业技术研究院 发光二极管结构与元件以及其制造方法
CN109950201A (zh) * 2019-03-25 2019-06-28 京东方科技集团股份有限公司 光电器件外延结构的制造方法
CN111048635A (zh) * 2019-12-27 2020-04-21 广东省半导体产业技术研究院 一种芯片制备方法与待剥离芯片结构

Also Published As

Publication number Publication date
CN116583954A (zh) 2023-08-11
US20230420605A1 (en) 2023-12-28

Similar Documents

Publication Publication Date Title
JP5270088B2 (ja) 垂直型発光素子及びその製造方法
JP5521981B2 (ja) 半導体発光素子の製造方法
US8735185B2 (en) Light emitting device and fabrication method thereof
JP5673581B2 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子、ランプ、並びに、レチクル
JP2007096300A (ja) 窒化ガリウム系半導体発光素子及びその製造方法
US20180277713A1 (en) Red light emitting diodes having an indium gallium nitride template layer and method of making thereof
US11437427B2 (en) Light-emitting device and manufacturing method thereof
JP5707978B2 (ja) 半導体発光素子用基板およびその製造方法、並びにその基板を用いた半導体発光素子
TW200531316A (en) Gallium nitride-based compound semiconductor light-emitting device
US20130193406A1 (en) Light emitting diode and fabrication method thereof
KR20130025716A (ko) 나노로드 발광소자
CN215070019U (zh) 图形化复合衬底及其led芯片
JP2024050867A (ja) 発光装置
EP2495773A1 (en) Light-emitting diode and method for manufacturing same
CN109360871A (zh) 一种图形化衬底、发光二极管外延片及其制备方法
KR20130025856A (ko) 나노로드 발광소자
WO2022109991A1 (zh) 基板结构及其制备方法、发光器件及其制备方法
TWI425656B (zh) 發光二極體晶片及其製造方法
US20210210656A1 (en) Method for micro-led epitaxial wafer manufacturing and micro-led epitaxial wafer
US20240128244A1 (en) Micro light emitting diode chip and display device
KR100808197B1 (ko) 수직형 발광 소자 및 그 제조방법
KR100730752B1 (ko) 초격자층을 갖는 화합물 반도체, 이를 이용한 발광 다이오드 및 이의 제조 방법
TWI550900B (zh) 半導體元件層及其製造方法
KR101309258B1 (ko) 발광 다이오드 및 그 제조 방법
CN117832352A (zh) 图形化衬底、外延片及制备方法、倒装发光二极管

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20962882

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 202080107232.0

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 18253382

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20962882

Country of ref document: EP

Kind code of ref document: A1