WO2022107275A1 - 集積化電子部品 - Google Patents

集積化電子部品 Download PDF

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Publication number
WO2022107275A1
WO2022107275A1 PCT/JP2020/043194 JP2020043194W WO2022107275A1 WO 2022107275 A1 WO2022107275 A1 WO 2022107275A1 JP 2020043194 W JP2020043194 W JP 2020043194W WO 2022107275 A1 WO2022107275 A1 WO 2022107275A1
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Prior art keywords
electrode pad
wiring
chip
insulator
rewiring layer
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PCT/JP2020/043194
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English (en)
French (fr)
Inventor
直志 美濃谷
Original Assignee
日本電信電話株式会社
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Publication date
Application filed by 日本電信電話株式会社 filed Critical 日本電信電話株式会社
Priority to JP2022563331A priority Critical patent/JP7567931B2/ja
Priority to US18/252,963 priority patent/US20230420316A1/en
Priority to PCT/JP2020/043194 priority patent/WO2022107275A1/ja
Publication of WO2022107275A1 publication Critical patent/WO2022107275A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Definitions

  • the present invention relates to an integrated electronic component in which a plurality of components are integrated.
  • Non-Patent Document 1 a technique for integrating a plurality of electronic components such as semiconductor chips and crystal oscillators by processes such as chip rearrangement and rewiring has been known (see, for example, Non-Patent Document 1).
  • electrical wiring and electrode pads are generally arranged on either the upper surface or the lower surface.
  • wiring for connecting the electrode pads of the plurality of parts is manufactured in the rewiring process.
  • This wiring grows in proportion to the chip size.
  • the parasitic capacitance and the parasitic inductance become large, and the power consumption increases and the frequency characteristics deteriorate. Therefore, an integration method that suppresses the length of wiring between the electrode pads of a plurality of components to be integrated is desired.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide an integrated electronic component capable of shortening wiring between electrode pads of a plurality of components.
  • the integrated electronic component of the present invention includes a first chip having a first electrode pad on the upper surface, a mold resin for sealing the first chip, and a rewiring layer arranged on the mold resin.
  • a second chip arranged on the rewiring layer and having a second electrode pad on the lower surface thereof, the rewiring layer is formed on an insulator and a lower surface of the insulator, and the first.
  • the third electrode pad and the fourth electrode pad which are provided with an interlayer connection conductor connecting the electrode pad of 3 and the fourth electrode pad and are connected via the interlayer connection conductor, face each other. It is characterized by being arranged.
  • one configuration example of the integrated electronic component of the present invention further includes an external connecting conductor formed so as to penetrate the mold resin from the upper surface to the lower surface, and the rewiring layer is formed on the upper surface and the lower surface of the insulator.
  • a wiring formed on any of the inner layers and connected to the third electrode pad or the fourth electrode pad, and a fifth electrode formed on the lower surface of the insulator and connected to the external connecting conductor.
  • a pad is further provided, and at least a part of the wiring is connected to the fifth electrode pad.
  • a part of the wiring is formed on the lower surface of the insulator and is connected to the first ground wiring connected to the third electrode pad for the ground.
  • a second ground wiring formed on the upper surface of the insulator and connected to the fourth electrode pad for ground, and at least a part of the wiring for signals is the third electrode for ground. It is characterized in that it is arranged between the pad and the fourth electrode pad for ground, and between the first ground wiring and the second ground wiring.
  • a part of the wiring is formed on the lower surface of the insulator and is connected to the first power supply wiring connected to the third electrode pad for power supply.
  • a second power supply wiring formed on the upper surface of the insulator and connected to the fourth electrode pad for power supply, and at least a part of the wiring for signals is the third electrode for power supply. It is characterized in that it is arranged between the pad and the fourth electrode pad for power supply, and between the first power supply wiring and the second power supply wiring.
  • the conductor connecting the first chip and the second chip can be shortened, and the parasitic capacitance can be increased. Since the parasitic inductance can be reduced, it is possible to suppress an increase in power consumption and deterioration of frequency characteristics.
  • FIG. 1 is a side view of an integrated electronic component according to an embodiment of the present invention.
  • FIG. 2 is a plan view of the rewiring layer of the integrated electronic component according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of the rewiring layer of the integrated electronic component according to the embodiment of the present invention.
  • FIG. 1 is a side view of an integrated electronic component according to an embodiment of the present invention.
  • the rewiring layer and the inside of the mold are shown in a transparent state.
  • the integrated electronic components of this embodiment are mounted on the lower chip 1, the mold resin 2 that seals the lower chip 1, the rewiring layer 3 mounted on the mold resin 2, and the rewiring layer 3. It is composed of an upper chip 4.
  • the lower chip 1 and the upper chip 4 are IC (Integrated Circuit) chips in which semiconductors are integrated, respectively.
  • the integrated electronic component of this embodiment operates with a signal from an external IC (not shown).
  • the rewiring layer 3 uses an insulator 30 made of a material such as glass or resin as a base material.
  • a wiring 31 for connecting an external IC and a lower chip 1 and an interlayer connecting conductor 32 (via) for connecting the lower chip 1 and the upper chip 4 are formed.
  • an upper chip connection area On the upper surface of the rewiring layer 3, there is an upper chip connection area in which the upper chip 4 is arranged.
  • An upper electrode pad 33 (fourth electrode pad) connected to the interlayer connecting conductor 32 is formed in the upper chip connecting region.
  • the upper electrode pad 33 and the electrode pad 40 on the lower surface of the upper chip 4 are connected via bumps 34 and the like.
  • a lower electrode pad 35 (third electrode pad) connected to the interlayer connection conductor 32 or the wiring 31 is formed in the lower chip connection region.
  • the lower electrode pad 35 and the electrode pad 10 on the upper surface of the lower chip 1 are connected via bumps 36 and the like.
  • a lower electrode pad 37 (fifth electrode pad) is formed in this region. At least a part of the wiring 31 is connected to the lower electrode pad 37.
  • a copper pillar 20 connected to the lower electrode pad 37 is formed in the mold resin 2.
  • a ball bump 21 connected to the pillar 20 is formed on the lower surface of the mold resin 2.
  • the pillar 20 and the ball bump 21 form an external connecting conductor.
  • the integrated electronic component is connected to an external power source and ground via the ball bump 21, and also sends and receives signals via the ball bump 21.
  • the upper electrode pad 33 of the rewiring layer 3 connected to the electrode pad 40 of the upper chip 4 and the lower electrode pad 35 of the rewiring layer 3 connected to the electrode pad 10 of the lower chip 1 are arranged so as to face each other. , It is connected via the interlayer connection conductor 32. Therefore, the upper electrode pad 33 and the lower electrode pad 35 are connected at the shortest distance.
  • the wiring 31 of the rewiring layer 3 connected to the electrode pad 10 of the lower chip 1 is arranged so as to avoid the interlayer connecting conductor 32.
  • the wiring 31 arranged in the inner layer of the rewiring layer 3 is connected to the lower electrode pad 35 of the rewiring layer 3 via the interlayer connection conductor 38. Further, the wiring 31 arranged in the inner layer of the rewiring layer 3 is connected to the lower electrode pad 37 of the rewiring layer 3 via the interlayer connection conductor 39.
  • FIG. 2 is a plan view of the rewiring layer 3. Between the upper chip 4 and the lower chip 1, signals are transmitted and received, ground is connected, and power is supplied from the lower chip 1 to the upper chip 4.
  • the wiring 31 connected to the external power supply via the ball bump 21 is connected to the lower electrode pad 35 for the power supply or the interlayer connection conductors 32 and 38 for the power supply.
  • the wiring 31 connected to the external ground via the ball bump 21 is connected to the lower electrode pad 35 for the ground or the interlayer connecting conductors 32 and 38 for the ground.
  • the wiring 31 for transmitting and receiving signals between the outside and the lower chip 1 via the ball bump 21 is arranged so as to avoid the interlayer connection conductor 32.
  • 33a is an upper electrode pad for transmitting and receiving signals between the upper chip 4 and the lower chip 1
  • 33b is an upper electrode pad for ground.
  • the wiring 31 for transmitting and receiving signals between the outside and the lower chip 1 is arranged so as to avoid the upper electrode pads 33a and 33b and the interlayer connecting conductor 32 below the upper electrode pads 33a and 33b as shown in FIG.
  • FIG. 3 is a cross-sectional view of the rewiring layer 3. Similar to FIG. 2, 33a is an upper electrode pad for signal transmission / reception, 33b is an upper electrode pad for ground, 35a is a lower electrode pad for signal transmission / reception, and 35b is a lower electrode pad for ground.
  • wiring for high frequency signals When there are many wirings 31 for high frequency signals connected to different electrode pads 10 of the lower chip 1, wiring for high frequency signals between the upper electrode pad 33b for ground and the lower electrode pad 35b as shown in FIG. 31 is arranged.
  • the upper electrode pad 33b and the ground wiring 50 on the upper surface of the rewiring layer 3 are connected, and the lower electrode pad 35b and the ground wiring 51 on the lower surface of the rewiring layer 3 are connected. Then, three wirings 31 are arranged between the upper electrode pad 33b and the lower electrode pad 35b and between the ground wiring 50 and the ground wiring 51.
  • the upper electrode pad 33b and the lower electrode pad 35b are connected via an interlayer connecting conductor 32.
  • the strip transmission line can be formed by the wiring 31, the upper electrode pad 33b, the lower electrode pad 35b, and the ground wiring 50, 51, and the conductor connecting the upper chip 4 and the lower chip 1 is formed.
  • Many wirings 31 can be provided in the inner layer of the rewiring layer 3 without lengthening.
  • the integrated electronic components of this embodiment are manufactured as follows. First, the rewiring layer 3 in which the wiring 31, the upper electrode pad 33, the lower electrode pads 35, 37, the interlayer connection conductors 32, 38, 39 and the like are formed on both sides and the inner layer of the insulator 30 is produced.
  • the pillar 20 is formed on the lower electrode pad 37 so that the surface on which the lower electrode pads 35, 37 of the rewiring layer 3 are formed faces up, and the lower chip 1 is placed on the rewiring layer 3. Is installed. As described above, the lower electrode pad 35 of the rewiring layer 3 and the electrode pad 10 of the lower chip 1 are connected via the bump 36. Subsequently, the mold resin 2 is formed and the lower chip 1 is sealed. The mold resin 2 is ground so that the pillar 20 is exposed, and a ball bump 21 is formed on the exposed portion of the pillar 20.
  • the upper chip 4 is mounted on the rewiring layer 3 so that the surface on which the upper electrode pad 33 of the rewiring layer 3 is formed faces up. As described above, the upper electrode pad 33 of the rewiring layer 3 and the electrode pad 40 of the upper chip 4 are connected via the bump 34. This completes the production of integrated electronic components.
  • At least a part of the wiring 31 is connected to the lower electrode pad 35 of the rewiring layer 3, but at least a part of the wiring 31 is connected to the upper electrode pad 33 of the rewiring layer 3. You may do it.
  • the lower chip 1 and the upper chip 4 are each singular, but at least one of the lower chip 1 and the upper chip 4 may be integrated.
  • the present invention can be applied to a technique for integrating a plurality of parts.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Semiconductor Integrated Circuits (AREA)

Abstract

集積化電子部品は、電極パッド（１０）を備えた下部チップ（１）と、モールド樹脂（２）と、再配線層（３）と、電極パッド（４０）を備えた上部チップ（４）を備える。再配線層（３）は、絶縁体（３０）の下面に形成され、電極パッド（１０）と接続された電極パッド（３５）と、絶縁体（３０）の上面に形成され、電極パッド（４０）と接続された電極パッド（３３）と、絶縁体（３０）中に形成され、電極パッド（３５）と電極パッド（３３）とを接続する層間接続導体（３２）とを備える。電極パッド（３５）と電極パッド（３３）とは対向して配置される。

Description

集積化電子部品
　本発明は、複数の部品を集積化した集積化電子部品に関するものである。
　近年では、複数の半導体チップや水晶振動子などの電子部品をチップ再配列、再配線等の工程により集積化する技術が知られている（例えば非特許文献１参照）。
　集積化される半導体チップ等の部品は、一般的には上面と下面のどちらかの一方の側に電気配線と電極パッドが配置される。複数の部品を同一平面上に配置する場合、再配線工程で複数の部品の電極パッド間を接続する配線が製作される。この配線は、チップサイズに比例して長くなる。配線が長くなると、寄生容量や寄生インダクタンスが大きくなり、消費電力の増加や周波数特性の劣化が起こる。したがって、集積化する複数の部品の電極パッド間の配線の長さを抑制する集積化法が望まれている。
杉崎吉昭，"小型・低コストパッケージとして実用化が始まるFO-WLP"，一般社団法人電子情報技術産業協会（JEITA），半導体技術ロードマップ専門委員会（STRJ），２０１６年，＜http://semicon.jeita.or.jp/STRJ/STRJ/2015/2015_06_Jissou.pdf＞
　本発明は、上記課題を解決するためになされたもので、複数の部品の電極パッド間の配線を短くすることができる集積化電子部品を提供することを目的とする。
　本発明の集積化電子部品は、上面に第１の電極パッドを備えた第１のチップと、前記第１のチップを封止するモールド樹脂と、前記モールド樹脂上に配置された再配線層と、前記再配線層上に配置され、下面に第２の電極パッドを備えた第２のチップとを備え、前記再配線層は、絶縁体と、前記絶縁体の下面に形成され、前記第１の電極パッドと接続された第３の電極パッドと、前記絶縁体の上面に形成され、前記第２の電極パッドと接続された第４の電極パッドと、前記絶縁体中に形成され、前記第３の電極パッドと前記第４の電極パッドとを接続する層間接続導体とを備え、前記層間接続導体を介して接続される前記第３の電極パッドと前記第４の電極パッドとが対向して配置されることを特徴とするものである。
　また、本発明の集積化電子部品の１構成例は、前記モールド樹脂を上面から下面まで貫通するように形成された外部接続導体をさらに備え、前記再配線層は、前記絶縁体の上面、下面、内層のいずれかに形成され、前記第３の電極パッドまたは前記第４の電極パッドと接続された配線と、前記絶縁体の下面に形成され、前記外部接続導体と接続された第５の電極パッドとをさらに備え、前記配線の少なくとも一部は、前記第５の電極パッドと接続されることを特徴とするものである。
　また、本発明の集積化電子部品の１構成例において、前記配線の一部は、前記絶縁体の下面に形成され、グランド用の前記第３の電極パッドと接続された第１のグランド配線と、前記絶縁体の上面に形成され、グランド用の前記第４の電極パッドと接続された第２のグランド配線であり、信号用の前記配線の少なくとも一部は、グランド用の前記第３の電極パッドとグランド用の前記第４の電極パッドとの間、および前記第１のグランド配線と前記第２のグランド配線との間に配置されることを特徴とするものである。
　また、本発明の集積化電子部品の１構成例において、前記配線の一部は、前記絶縁体の下面に形成され、電源用の前記第３の電極パッドと接続された第１の電源配線と、前記絶縁体の上面に形成され、電源用の前記第４の電極パッドと接続された第２の電源配線であり、信号用の前記配線の少なくとも一部は、電源用の前記第３の電極パッドと電源用の前記第４の電極パッドとの間、および前記第１の電源配線と前記第２の電源配線との間に配置されることを特徴とするものである。
　本発明によれば、第１のチップと第２のチップとを対向させて集積化することにより、第１のチップと第２のチップとを接続する導体を短くすることができ、寄生容量や寄生インダクタンスを小さくすることができるので、消費電力の増加や周波数特性の劣化を抑制することができる。
図１は、本発明の実施例に係る集積化電子部品の側面図である。 図２は、本発明の実施例に係る集積化電子部品の再配線層の平面図である。 図３は、本発明の実施例に係る集積化電子部品の再配線層の断面図である。
　以下、本発明の実施例について図面を参照して説明する。図１は本発明の実施例に係る集積化電子部品の側面図である。図１では、再配線層とモールドの内部を透視した状態で記載している。
　本実施例の集積化電子部品は、下部チップ１と、下部チップ１を封止するモールド樹脂２と、モールド樹脂２上に搭載された再配線層３と、再配線層３上に搭載された上部チップ４とから構成される。
　下部チップ１と上部チップ４とは、それぞれ半導体を集積化したＩＣ（Integrated Circuit）チップである。本実施例の集積化電子部品は、図示しない外部のＩＣからの信号で動作する。
　再配線層３は、例えばガラスや樹脂などの材料からなる絶縁体３０を基材とする。この絶縁体３０中に、外部のＩＣと下部チップ１とを接続する配線３１と、下部チップ１と上部チップ４とを接続する層間接続導体３２（ビア）とが形成されている。
　再配線層３の上面には、上部チップ４が配置される上部チップ接続領域がある。上部チップ接続領域には、層間接続導体３２と接続された上部電極パッド３３（第４の電極パッド）が形成されている。上部電極パッド３３と上部チップ４の下面の電極パッド４０とがバンプ３４などを介して接続されている。
　再配線層３の下面には、下部チップ１が配置される下部チップ接続領域がある。下部チップ接続領域には、層間接続導体３２または配線３１と接続された下部電極パッド３５（第３の電極パッド）が形成されている。下部電極パッド３５と下部チップ１の上面の電極パッド１０とがバンプ３６などを介して接続されている。
　さらに、再配線層３の下面には、集積化電子部品と外部との接続のための領域がある。この領域には、下部電極パッド３７（第５の電極パッド）が形成されている。配線３１の少なくとも一部は、下部電極パッド３７と接続される。
　モールド樹脂２中には、下部電極パッド３７と接続された銅製のピラー２０が形成されている。モールド樹脂２の下面には、ピラー２０と接続されたボールバンプ２１が形成されている。ピラー２０とボールバンプ２１とは、外部接続導体を構成している。
　集積化電子部品は、ボールバンプ２１を介して外部の電源およびグランドと接続され、またボールバンプ２１を介して信号の送受を行う。
　上部チップ４の電極パッド４０と接続される再配線層３の上部電極パッド３３と、下部チップ１の電極パッド１０と接続される再配線層３の下部電極パッド３５とは、対向して配置され、層間接続導体３２を介して接続される。このため、上部電極パッド３３と下部電極パッド３５とは、最短距離で接続される。
　下部チップ１の電極パッド１０と接続される再配線層３の配線３１は、層間接続導体３２を避けて配置される。なお、再配線層３の内層に配置される配線３１は、層間接続導体３８を介して再配線層３の下部電極パッド３５と接続される。また、再配線層３の内層に配置される配線３１は、層間接続導体３９を介して再配線層３の下部電極パッド３７と接続される。
　図２は再配線層３の平面図である。上部チップ４と下部チップ１との間では、信号の送受と、グランドの接続と、下部チップ１から上部チップ４への電源の供給とが行われる。ボールバンプ２１を介して外部の電源と接続された配線３１は、電源用の下部電極パッド３５または電源用の層間接続導体３２，３８と接続される。同様に、ボールバンプ２１を介して外部のグランドと接続された配線３１は、グランド用の下部電極パッド３５またはグランド用の層間接続導体３２，３８と接続される。
　一方、ボールバンプ２１を介して外部と下部チップ１との間で信号の送受を行うための配線３１は、層間接続導体３２を避けるようにして配置される。図２の例では、３３ａが上部チップ４と下部チップ１との間の信号送受用の上部電極パッド、３３ｂがグランド用の上部電極パッドである。外部と下部チップ１との間で信号の送受を行うための配線３１は、図２に示すように上部電極パッド３３ａ，３３ｂとその下の層間接続導体３２とを避けるようにして配置される。
　図３は再配線層３の断面図である。図２と同様に、３３ａは信号送受用の上部電極パッド、３３ｂはグランド用の上部電極パッド、３５ａは信号送受用の下部電極パッド、３５ｂはグランド用の下部電極パッドである。
　下部チップ１の異なる電極パッド１０と接続される高周波信号用の配線３１が多い場合、図３に示すようにグランド用の上部電極パッド３３ｂと下部電極パッド３５ｂとの間に、高周波信号用の配線３１を配置する。
　図３の例では、上部電極パッド３３ｂと再配線層３の上面のグランド配線５０とを接続し、下部電極パッド３５ｂと再配線層３の下面のグランド配線５１とを接続している。そして、上部電極パッド３３ｂと下部電極パッド３５ｂとの間、およびグランド配線５０とグランド配線５１との間に、配線３１を３本配置している。上部電極パッド３３ｂと下部電極パッド３５ｂとは、層間接続導体３２を介して接続されている。
　こうして、本実施例では、配線３１と上部電極パッド３３ｂと下部電極パッド３５ｂとグランド配線５０，５１とによりストリップ伝送線を形成することができ、上部チップ４と下部チップ１とを接続する導体を長くすることなく、再配線層３の内層に多くの配線３１を設けることができる。
　なお、図３では図示していないが、再配線層３の上面には電源用の上部電極パッド３３と接続される電源配線があり、再配線層３の下面には電源用の下部電極パッド３５と接続される電源配線がある。そこで、電源用の上部電極パッド３３と電源用の下部電極パッド３５との間、および再配線層３の上面の電源配線と下面の電源配線との間に、配線３１を配置するようにしてもよい。
　本実施例の集積化電子部品は以下のようにして作製される。まず、絶縁体３０の両面および内層に、配線３１、上部電極パッド３３、下部電極パッド３５，３７、層間接続導体３２，３８，３９などが形成された再配線層３を作製する。
　次に、再配線層３の下部電極パッド３５，３７が形成された面が上になるようにして、下部電極パッド３７の上にピラー２０を形成し、再配線層３の上に下部チップ１を搭載する。上記のとおり、再配線層３の下部電極パッド３５と下部チップ１の電極パッド１０とは、バンプ３６を介して接続される。続いて、モールド樹脂２を形成して下部チップ１を封止する。ピラー２０が露出するようにモールド樹脂２を研削して、露出したピラー２０の部分にボールバンプ２１を形成する。
　次に、再配線層３の上部電極パッド３３が形成された面が上になるようにして、再配線層３の上に上部チップ４を搭載する。上記のとおり、再配線層３の上部電極パッド３３と上部チップ４の電極パッド４０とは、バンプ３４を介して接続される。
　以上で、集積化電子部品の作製が完了する。
　なお、本実施例では、配線３１の少なくとも一部を再配線層３の下部電極パッド３５と接続しているが、配線３１の少なくとも一部を再配線層３の上部電極パッド３３と接続するようにしてもよい。
　また、本実施例では、下部チップ１と上部チップ４をそれぞれ単数としているが、下部チップ１と上部チップ４のうち少なくとも一方を複数個集積化してもよい。
　本発明は、複数の部品を集積化する技術に適用することができる。
　１…下部チップ、２…モールド樹脂、３…再配線層、４…上部チップ、１０，３３，３５，３７，４０…電極パッド、２０…ピラー、２１…ボールバンプ、３０…絶縁体、３１…配線、３２，３８，３９…層間接続導体、１０，３３，３５，３７，４０…電極パッド、３４，３６…バンプ、５０，５１…グランド配線。

Claims (4)

  1. 　上面に第１の電極パッドを備えた第１のチップと、
    　前記第１のチップを封止するモールド樹脂と、
    　前記モールド樹脂上に配置された再配線層と、
    　前記再配線層上に配置され、下面に第２の電極パッドを備えた第２のチップとを備え、
    　前記再配線層は、
    　絶縁体と、
    　前記絶縁体の下面に形成され、前記第１の電極パッドと接続された第３の電極パッドと、
    　前記絶縁体の上面に形成され、前記第２の電極パッドと接続された第４の電極パッドと、
    　前記絶縁体中に形成され、前記第３の電極パッドと前記第４の電極パッドとを接続する層間接続導体とを備え、
    　前記層間接続導体を介して接続される前記第３の電極パッドと前記第４の電極パッドとが対向して配置されることを特徴とする集積化電子部品。
  2. 　請求項１記載の集積化電子部品において、
    　前記モールド樹脂を上面から下面まで貫通するように形成された外部接続導体をさらに備え、
    　前記再配線層は、
    　前記絶縁体の上面、下面、内層のいずれかに形成され、前記第３の電極パッドまたは前記第４の電極パッドと接続された配線と、
    　前記絶縁体の下面に形成され、前記外部接続導体と接続された第５の電極パッドとをさらに備え、
    　前記配線の少なくとも一部は、前記第５の電極パッドと接続されることを特徴とする集積化電子部品。
  3. 　請求項２記載の集積化電子部品において、
    　前記配線の一部は、前記絶縁体の下面に形成され、グランド用の前記第３の電極パッドと接続された第１のグランド配線と、前記絶縁体の上面に形成され、グランド用の前記第４の電極パッドと接続された第２のグランド配線であり、
    　信号用の前記配線の少なくとも一部は、グランド用の前記第３の電極パッドとグランド用の前記第４の電極パッドとの間、および前記第１のグランド配線と前記第２のグランド配線との間に配置されることを特徴とする集積化電子部品。
  4. 　請求項２記載の集積化電子部品において、
    　前記配線の一部は、前記絶縁体の下面に形成され、電源用の前記第３の電極パッドと接続された第１の電源配線と、前記絶縁体の上面に形成され、電源用の前記第４の電極パッドと接続された第２の電源配線であり、
    　信号用の前記配線の少なくとも一部は、電源用の前記第３の電極パッドと電源用の前記第４の電極パッドとの間、および前記第１の電源配線と前記第２の電源配線との間に配置されることを特徴とする集積化電子部品。
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WO2017187559A1 (ja) * 2016-04-27 2017-11-02 三菱電機株式会社 高周波回路
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