WO2022095711A1 - 磁传感器的制备方法 - Google Patents

磁传感器的制备方法 Download PDF

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WO2022095711A1
WO2022095711A1 PCT/CN2021/125320 CN2021125320W WO2022095711A1 WO 2022095711 A1 WO2022095711 A1 WO 2022095711A1 CN 2021125320 W CN2021125320 W CN 2021125320W WO 2022095711 A1 WO2022095711 A1 WO 2022095711A1
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composite layer
layer
magnetoresistive composite
insulating layer
magnetoresistive
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PCT/CN2021/125320
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English (en)
French (fr)
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赵海轮
冷群文
邹泉波
安琪
周汪洋
丁凯文
周良
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歌尔微电子股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • the present application relates to the technical field of manufacturing processes of magnetic electronic devices, and in particular, to a method for manufacturing a magnetic sensor.
  • the magnetoresistive sensor of Giant Magneto Resistance (GMR) or Tunnel Magneto Resistance (TMR) can be better used to replace the traditional magnetoresistance sensor, because the magnetoresistance value of the giant magnetoresistance sensor is very large.
  • the magnetic field sensitivity is also relatively high, which can greatly increase the resolution, sensitivity and accuracy of the sensor, especially when the external magnetic field is very weak, such as counterfeit banknote detectors, etc., it will show greater advantages.
  • Magnetoresistive sensors can measure many physical quantities, not only limited to measuring magnetic fields, such as current, linear displacement, linear velocity, angular displacement, angular velocity and acceleration.
  • Various high-performance magnetoresistive sensors made of giant magnetoresistive materials are used in many There are a wide range of applications in the field, such as electromechanical automatic control, biological detection and aerospace industry.
  • the magnetoresistive sensor with spin valve structure is a common magnetoresistive sensor.
  • the detection of the external magnetic field signal by the magnetoresistive sensor is completely completed by the spin valve film.
  • the performance of the spin valve film and its pattern accuracy fundamentally affect the magnetoresistive sensor. performance.
  • the main purpose of this application is to propose a method for preparing a magnetic sensor, which aims to improve the molding precision of the device, so as to improve the quality of the product.
  • the preparation method of the magnetic sensor proposed in this application includes:
  • a semiconductor substrate is provided, a first insulating layer is formed on the surface of the semiconductor substrate, and a magnetoresistive composite layer is formed on the first insulating layer, wherein the magnetoresistive composite layer includes an effective magnetoresistive composite layer and a process magnetoresistive layer composite layer;
  • a deposition groove is formed on the surface of the magnetoresistive composite layer by photolithography, and a thin film electrode is formed in the deposition groove;
  • a second insulating layer is formed on the surface of the magnetoresistive composite layer and the thin film electrode, and the second insulating layer corresponding to the process magnetoresistive composite layer is removed by photolithography, so that the process magnetoresistive composite layer surface exposed;
  • a portion of the hard mask is removed by photolithography, so that the surface of the thin film electrode is at least partially exposed.
  • the semiconductor substrate is a silicon substrate; and/or,
  • the material of the first insulating layer is silicon oxide; and/or,
  • the process of forming the first insulating layer on the surface of the semiconductor substrate is a thermal oxidation process; and/or,
  • the process of forming the magnetoresistive composite layer on the first insulating layer is a magnetron sputtering process.
  • the thickness of the magnetoresistive composite layer is 30-40 nm; and/or,
  • the magnetoresistive composite layer includes a bottom layer, an antiferromagnetic pinning layer, a ferromagnetic pinned layer, a non-magnetic interlayer, a soft magnetic free layer and a protective layer stacked in sequence, wherein the bottom layer is formed on the first layer. an insulating layer; and/or,
  • the magnetoresistive composite layer is one of a giant magnetoresistive composite layer or a tunnel magnetoresistive composite layer.
  • the photoresist employed is a negative photoresist; and/or,
  • the etching process for forming the deposition groove on the surface of the magnetoresistive composite layer is an ion beam etching process; and/or,
  • the process of forming the thin film electrode in the deposition tank is an electron beam evaporation process.
  • the material of the thin film electrode is one or more of aluminum, chromium, titanium and gold; and/or,
  • the thickness of the thin film electrode is 200-300 nm.
  • the second insulating layer is formed on the surface of the magnetoresistive composite layer and the thin film electrode, and the second insulating layer corresponding to the process magnetoresistive composite layer is removed by photolithography, so as to In the step of exposing the surface of the magnetoresistive composite layer of the process:
  • the photoresist employed is a positive photoresist; and/or,
  • the process of forming the second insulating layer on the surface of the magnetoresistive composite layer and the thin film electrode is a chemical vapor deposition process; and/or,
  • the etching process for removing the second insulating layer corresponding to the process magnetoresistive composite layer is a reactive ion etching process.
  • the thickness of the second insulating layer is 200 ⁇ 300 nm; and/or,
  • the material of the second insulating layer is silicon nitride or silicon oxide.
  • the etching process for etching the magnetoresistive composite layer of the process is an ion beam etching process.
  • the photoresist employed is a positive photoresist; and/or,
  • the etching process for removing part of the hard mask is a reactive ion etching process.
  • an organic solvent is used to remove the photoresist, and the organic solvent is acetone or isopropanol.
  • a semiconductor substrate is provided, a first insulating layer is formed on the surface of the semiconductor substrate, a magnetoresistive composite layer is formed on the first insulating layer, and a photolithography technique is used to form the magnetoresistive composite layer on the surface of the semiconductor substrate.
  • a deposition groove is formed on the surface, a thin film electrode is formed in the deposition groove, a second insulating layer is formed on the surface of the magnetoresistive composite layer and the thin film electrode, and photolithography technology is used to remove the corresponding magnetoresistive composite layer of the process.
  • the surface of the process magnetoresistance composite layer is exposed, and the second insulating layer corresponding to the effective magnetoresistance composite layer is used as a hard mask to etch the process magnetoresistance composite layer, using Part of the hard mask is removed by photolithography, so that the surface of the thin film electrode is at least partially exposed, and the second insulating layer is used as a hard mask to etch the process magnetoresistive composite layer to obtain effective magnetoresistance
  • the composite layer improves the forming accuracy of the effective magnetoresistive composite layer, thereby improving the product quality and having a good effect.
  • FIG. 1 is a schematic flowchart of an embodiment of a method for preparing a magnetic sensor provided by the present application
  • Fig. 2 is the technological process diagram of the magnetic sensor prepared by the preparation method of the magnetic sensor in Fig. 1;
  • FIG. 3 is a schematic structural diagram of an effective magnetoresistive composite layer of a magnetic sensor prepared by using the preparation method of the magnetic sensor in FIG. 1 .
  • FIG. 1 is a schematic flowchart of an embodiment of the method for preparing a magnetic sensor provided by the application
  • FIG. 2 is a process of a magnetic sensor prepared by using the method for preparing a magnetic sensor in FIG. 1
  • FIG. 3 is a schematic structural diagram of the effective magnetoresistive composite layer of the magnetic sensor prepared by the preparation method of the magnetic sensor in FIG. 1 .
  • the preparation method of the magnetic sensor provided by the present application includes the following steps:
  • Step S10 providing a semiconductor substrate 1, forming a first insulating layer 2 on the surface of the semiconductor substrate 1, and forming a magnetoresistive composite layer 3 on the first insulating layer 2, wherein the magnetoresistive composite layer 3 includes Effective magnetoresistive composite layer 31 and process magnetoresistive composite layer 32;
  • the semiconductor substrate 1 may be one of a silicon substrate, a germanium substrate, a gallium nitride substrate, and the like. In one embodiment, the semiconductor substrate 1 is a silicon substrate substrate.
  • the corresponding material of the first insulating layer 2 may be one of silicon oxide, germanium oxide, etc. In one embodiment, the material of the first insulating layer 2 is silicon oxide.
  • the magnetoresistive composite layer 3 includes a bottom layer, an antiferromagnetic pinned layer, a ferromagnetic pinned layer, a non-magnetic interlayer, a soft magnetic free layer and a protective layer stacked in sequence.
  • the bottom layer is formed on the first insulating layer 2
  • the magnetoresistive composite layer 3 is a composite structure of a multilayer film, and the magnetron sputtering process is often formed on the first insulating layer 2
  • Magnetron sputtering is a kind of physical vapor deposition. It has the advantages of simple equipment, easy control, large coating area and strong adhesion. It is widely used in this field and will not be described in further detail here.
  • the magnetoresistive composite layer 3 may be a giant magnetoresistive composite layer 3 or a tunnel magnetoresistive composite layer 3 .
  • the thickness of the magnetoresistive composite layer 3 is 30-40 nm.
  • the silicon oxide insulating layer is formed on the silicon substrate, and can be prepared by a thermal oxidation process.
  • silicon and gases containing oxidizing substances such as water vapor and oxygen, undergo chemical reactions at high temperatures, and the silicon wafers undergo chemical reactions.
  • a dense silicon dioxide film is produced on the surface, and the thermal oxidation process is widely used in the art, and will not be described in further detail here.
  • the effective magnetoresistive composite layer 31 and the process magnetoresistive composite layer 32 described in this embodiment are a film structure corresponding to different regions in the plane of the magnetoresistive composite layer 3.
  • the The effective magnetoresistive composite layer 31 is located in the middle of the magnetoresistive composite layer 3
  • the process magnetoresistive composite layer 32 is located on both sides of the effective magnetoresistive composite layer 31, and the effective magnetoresistive composite layer 31 is the final
  • the film structure that needs to be retained, the process magnetoresistive composite layer 32 is the film structure that needs to be removed eventually, and only exists as a film structure in an intermediate process.
  • Step S20 using photolithography technology to form a deposition groove 33 on the surface of the magnetoresistive composite layer 3, and form a thin film electrode 4 in the deposition groove 33;
  • Photolithography is a process technology that uses the principle of optical-chemical reaction and chemical and physical etching methods to transfer circuit patterns to the single crystal surface or dielectric layer to form effective pattern windows or functional patterns.
  • Lithography also refers to the technology of transferring the pattern on the mask to the substrate with the help of photoresist under the action of light.
  • the substrate surface of the etchant causes a chemical reaction of the photoresist in the exposed area; then the photoresist in the exposed area or unexposed area is dissolved and removed by the developing technology (the former is called positive photoresist, the latter is called negative photoresist).
  • Glue so that the pattern on the mask is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology.
  • the photoresist used is a negative photoresist.
  • the pattern after the development of the negative photoresist is an inverted trapezoid, and there is no contact between the pattern and the edge of the surface of the magnetoresistive composite layer 3. Therefore, in all When the thin film electrode 4 is formed in the deposition groove 33, the risk of photoresist curing at the edge of the surface of the magnetoresistive composite layer 3 is reduced, the molding accuracy of the effective magnetoresistive composite layer 31 is improved, and the device performance is improved. Molding quality.
  • an organic solvent is used to remove the photoresist, and the organic solvent is acetone or isopropanol.
  • the etching process for forming the deposition grooves 33 on the surface of the magnetoresistive composite layer 3 is an ion beam etching process.
  • the energy is transferred from the incident ions to the atoms on the solid surface. If the binding energy between the atoms on the solid surface is lower than the energy of the incident ions, the atoms on the solid surface will be removed or removed from the surface.
  • the minimum diameter of the ion beam is about 10nm, and the minimum structure etched by the ion beam may not be smaller than 10nm.
  • the beam spot of focused ion beam etching can reach below 100nm, the minimum is 10nm, and the processing result with the minimum line width of 12nm can be obtained.
  • ions Compared with the interaction between electrons and solids, ions have less scattering effect in solids, and can perform etching less than 50nm at a faster direct writing speed, so focused ion beam etching is an ideal method for nanofabrication.
  • Another advantage of the focused ion beam technology is the maskless implantation under computer control, even without development and etching, to directly manufacture various nano-device structures, and it is very convenient to etch to form the deposition groove 33, and ion beam etching The process is widely used in the art and will not be described in further detail here.
  • the process of forming the thin film electrode 4 in the deposition tank 33 is an electron beam evaporation process.
  • Electron beam evaporation is a method of vacuum evaporation, which is developed on the basis of tungsten filament evaporation.
  • the beam is a high-speed electron flow, and electron beam evaporation is a mature and main coating method in the current vacuum coating technology.
  • the electron beam evaporation process is widely used in the field, and will not be described in further detail here.
  • the material of the thin film electrode 4 is one or more of aluminum, chromium, titanium and gold.
  • the thickness of the thin film electrode 4 is 200-300 nm.
  • step S30 a second insulating layer 5 is formed on the surface of the magnetoresistive composite layer 3 and the thin film electrode 4, and the second insulating layer 5 corresponding to the process magnetoresistive composite layer 32 is removed by photolithography, so as to so that the surface of the process magnetoresistive composite layer 32 is exposed;
  • the photoresist used to remove the second insulating layer 5 corresponding to the process magnetoresistive composite layer 32 by photolithography is positive photoresist. , the part of the exposed area is retained. Combined with the influence of light intensity, the pattern after the positive photoresist is developed is an upright trapezoid. When the second insulating layer 5 is removed, the remaining The second insulating layer 5 obtains good edge quality, improves the precision of the hard mask, and ensures the molding quality of the subsequent molding device.
  • the process of forming the second insulating layer 5 on the surfaces of the magnetoresistive composite layer 3 and the thin film electrode 4 is a chemical vapor deposition process.
  • One or several gas-phase compounds or elemental substances of thin film elements are chemically reacted on the surface of the substrate to form thin films.
  • Chemical vapor deposition is a new technology for preparing inorganic materials developed in recent decades. Chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials.
  • These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element interelement compounds in III-V, II-IV, IV-VI groups, and their physical functions can be passed through the gas phase.
  • the doping deposition process is precisely controlled, and the chemical vapor deposition process is widely used in the art, and will not be described in further detail here.
  • the etching process for removing the second insulating layer 5 corresponding to the process magnetoresistive composite layer 32 is a reactive ion etching process
  • the reactive ion etching technology is a highly anisotropic and highly selective etching process. It uses molecular gas plasma to etch in a vacuum system, and uses ion-induced chemical reaction to achieve anisotropic etching, that is, to use ion energy to form the surface of the etched layer. It is easy to etch the damaged layer and promote chemical reaction. At the same time, ions can also remove surface products to expose the clean etching surface.
  • the environmental temperature of this etching process is low, and the reaction temperature is low at 20 ⁇ 35 ° C. , the risk of hardening of the photoresist layer 6 is reduced, and the reactive ion etching process is widely used in the art, and will not be described in further detail here.
  • the thickness of the second insulating layer 5 is 200-300 nm
  • the material of the second insulating layer 5 is silicon nitride or silicon oxide.
  • Step S40 using the second insulating layer 5 corresponding to the effective magnetoresistive composite layer 31 as a hard mask, etching the process magnetoresistive composite layer 32;
  • the material of the second insulating layer 5 is relatively hard, and as a hard mask, the pattern corresponding to the mask can be well formed, and the forming process is improved. precision.
  • the etching process for etching the magnetoresistive composite layer 32 of the process is an ion beam etching process, and ion beam etching is also called ion milling.
  • the incident ions are transferred to the atoms on the solid surface. If the binding energy between the atoms on the solid surface is lower than the energy of the incident ions, the atoms on the solid surface will be removed or removed from the surface.
  • the ions used in ion beam etching come from inert gases. .
  • the minimum diameter of the ion beam is about 10nm, and the minimum structure etched by the ion beam may not be smaller than 10nm.
  • the beam spot of focused ion beam etching can reach below 100nm, the minimum is 10nm, and the processing result with the minimum line width of 12nm can be obtained.
  • ions Compared with the interaction between electrons and solids, ions have less scattering effect in solids, and can perform etching less than 50nm at a faster direct writing speed, so focused ion beam etching is an ideal method for nanofabrication.
  • Another advantage of the focused ion beam technology is the maskless implantation under computer control, even without development and etching, to directly manufacture various nano-device structures, and it is very convenient to etch to form the deposition groove 33, and ion beam etching The process is widely used in the art and will not be described in further detail here.
  • Step S50 using photolithography to remove part of the hard mask, so that the surface of the thin film electrode 4 is at least partially exposed;
  • the photoresist used to remove part of the hard mask by photolithography is positive photoresist, and the positive photoresist retains the part of the exposed area during light development.
  • the pattern after the development of the positive photoresist is an upright trapezoid, and when the hard mask is removed, the remaining hard mask can obtain a good edge quality, The molding quality of the shaped device is improved.
  • the etching process for removing part of the hard mask is a reactive ion etching process
  • the reactive ion etching technology is a dry etching technology with strong anisotropy and high selectivity.
  • molecular gas plasma is used for etching
  • ion-induced chemical reaction is used to achieve anisotropic etching, that is, ion energy is used to form an easily etched damage layer on the surface of the etched layer and promote chemical reaction.
  • ions can also remove surface products to expose the effect of a clean etching surface.
  • the ambient temperature of this etching process is low, at 20 to 35 ° C, the reaction temperature is low, which reduces the hardening of the photoresist layer 6. Risk, the reactive ion etching process is widely used in the art and will not be described in further detail here.
  • a semiconductor substrate 1 is provided, a first insulating layer 2 is formed on the surface of the semiconductor substrate 1, a magnetoresistive composite layer 3 is formed on the first insulating layer 2, and a photolithography technique is used in the A deposition groove 33 is formed on the surface of the magnetoresistive composite layer 3, and a thin film electrode 4 is formed in the deposition groove 33, and a second insulating layer 5 is formed on the surface of the magnetoresistive composite layer 3 and the thin film electrode 4, and photolithography is used.
  • the technology removes the second insulating layer 5 corresponding to the process magnetoresistive composite layer 32 so that the surface of the process magnetoresistive composite layer 32 is exposed, and the second insulating layer 5 corresponding to the effective magnetoresistive composite layer 31 is Hard mask, etching the process magnetoresistive composite layer 32, using photolithography to remove part of the hard mask, so that the surface of the thin film electrode 4 is at least partially exposed, using the second insulating layer 5
  • the process magnetoresistive composite layer 32 is etched for the hard mask to obtain the effective magnetoresistive composite layer 31 , which improves the forming accuracy of the effective magnetoresistive composite layer 31 , thereby improving the product quality, and has a good effect.

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Abstract

一种磁传感器的制备方法，包括以下步骤：提供半导体衬底（1），在所述半导体衬底（1）表面形成第一绝缘层（2），在所述第一绝缘层（2）上形成磁阻复合层（3），所述磁阻复合层（3）包括有效磁阻复合层（31）以及工艺磁阻复合层（32）；采用光刻技术在所述磁阻复合层（3）表面形成沉积槽（33），并在所述沉积槽（33）内形成薄膜电极（4）；在所述磁阻复合层（3）以及所述薄膜电极（4）的表面形成第二绝缘层（5），采用光刻技术去除所述工艺磁阻复合层（32）对应的所述第二绝缘层（5），以使得所述工艺磁阻复合层（32）表面显露；以所述有效磁阻复合层（31）对应的第二绝缘层（5）为硬质掩膜，刻蚀所述工艺磁阻复合层（32）；采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极（4）的表面至少部分显露。

Description

磁传感器的制备方法
本申请要求于2020年11月5日申请的、申请号为202011222661.0的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及磁性电子器件制作工艺技术领域，特别涉及一种磁传感器的制备方法。
 背景技术
巨磁阻（Giant Magneto Resistance，GMR）或隧道磁阻（Tunnel Magneto Resistance，TMR）的磁阻传感器可以较好地用来代替传统磁电阻传感器，因为巨磁阻传感器的磁阻率值很大、磁场灵敏度也比较高，可以很大程度上增加传感器的分辨率、灵敏度和精确性，尤其当外部磁场很微弱的情况下，比如伪钞识别器等，会展现出更大的优势。磁电阻传感器可以测量很多物理量，不仅仅是局限于测量磁场，例如电流、线位移、线速度、角位移、角速度和加速度，使用巨磁阻材料制备的各种高性能的磁电阻传感器，在很多领域中都有着广泛的应用，比如机电自动控制、生物检测和航天工业等。
自旋阀结构磁阻传感器为常见的磁阻传感器，磁阻传感器对外界磁场信号的探测完全是通过自旋阀薄膜完成的，自旋阀薄膜性能及其图形精度从根本上影响了磁阻传感器的性能。
现有技术中，成型自旋阀薄膜时，会在自旋阀薄膜的边缘形成粘附物，该粘附物难以清除，影响磁阻传感器的产品性能，降低了产品的质量。
 技术问题
本申请的主要目的是提出一种磁传感器的制备方法，旨在提高器件的成型精度，以提高产品的质量。
 技术解决方案
为实现上述目的，本申请提出的磁传感器的制备方法，包括：
提供半导体衬底，在所述半导体衬底表面形成第一绝缘层，在所述第一绝缘层上形成磁阻复合层，其中，所述磁阻复合层包括有效磁阻复合层以及工艺磁阻复合层；
采用光刻技术在所述磁阻复合层表面形成沉积槽，并在所述沉积槽内形成薄膜电极；
在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层，采用光刻技术去除所述工艺磁阻复合层对应的所述第二绝缘层，以使得所述工艺磁阻复合层表面显露；
以所述有效磁阻复合层对应的第二绝缘层为硬质掩膜，刻蚀所述工艺磁阻复合层；
采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极的表面至少部分显露。
在一实施例中，所述提供半导体衬底，在所述半导体衬底表面形成第一绝缘层，在所述第一绝缘层上形成磁阻复合层的步骤中：
所述半导体衬底为硅基片；和/或，
所述第一绝缘层的材质为氧化硅；和/或，
在所述半导体衬底表面形成第一绝缘层的工艺为热氧化工艺；和/或，
在所述第一绝缘层上形成磁阻复合层的工艺为磁控溅射工艺。
在一实施例中，所述磁阻复合层的厚度为30~40nm；和/或，
所述磁阻复合层包括依次叠设的底层、反铁磁钉扎层、铁磁被钉扎层、非磁性间层、软磁自由层以及保护层，其中，所述底层形成于所述第一绝缘层上；和/或，
所述磁阻复合层为巨磁阻复合层或隧道磁阻复合层中的一种。
在一实施例中，所述采用光刻技术在所述磁阻复合层表面形成沉积槽，并在所述沉积槽内形成薄膜电极的步骤中：
采用的光致抗蚀剂为负性光刻胶；和/或，
在所述磁阻复合层表面形成沉积槽的刻蚀工艺为离子束刻蚀工艺；和/或，
在所述沉积槽内形成薄膜电极的工艺为电子束蒸发工艺。
在一实施例中，所述薄膜电极的材质为铝、铬、钛以及金中的一种或者多种；和/或，
所述薄膜电极的厚度为200~300nm。
在一实施例中，所述在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层，采用光刻技术去除所述工艺磁阻复合层对应的所述第二绝缘层，以使得所述工艺磁阻复合层表面显露的步骤中：
采用的光致抗蚀剂为正性光刻胶；和/或，
在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层的工艺为化学气相沉积工艺；和/或，
去除所述工艺磁阻复合层对应的所述第二绝缘层的刻蚀工艺为反应离子刻蚀工艺。
在一实施例中，所述第二绝缘层的厚度为200~300nm；和/或，
所述第二绝缘层的材质为氮化硅或者氧化硅。
在一实施例中，所述以所述有效磁阻复合层对应的第二绝缘层为硬质掩膜，刻蚀所述工艺磁阻复合层的步骤中：
刻蚀所述工艺磁阻复合层的刻蚀工艺为离子束刻蚀工艺。
在一实施例中，所述采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极的表面至少部分显露的步骤中：
采用的光致抗蚀剂为正性光刻胶；和/或，
去除部分所述硬质掩膜的刻蚀工艺为反应离子刻蚀工艺。
在一实施例中，在所述光刻技术中，采用有机溶剂去除光致抗蚀剂，所述有机溶剂为丙酮或者异丙醇。
 有益效果
本申请的技术方案中，提供半导体衬底，在所述半导体衬底表面形成第一绝缘层，在所述第一绝缘层上形成磁阻复合层，采用光刻技术在所述磁阻复合层表面形成沉积槽，并在所述沉积槽内形成薄膜电极，在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层，采用光刻技术去除所述工艺磁阻复合层对应的所述第二绝缘层，以使得所述工艺磁阻复合层表面显露，以所述有效磁阻复合层对应的第二绝缘层为硬质掩膜，刻蚀所述工艺磁阻复合层，采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极的表面至少部分显露，采用所述第二绝缘层为硬质掩膜刻蚀所述工艺磁阻复合层以获得有效磁阻复合层，提高了所述有效磁阻复合层成型精度，进而提高了产品质量，具有较好的效果。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请提供的磁传感器的制备方法的一实施例的流程示意图；
图2为采用图1中磁传感器的制备方法制备的磁传感器的工艺过程图；
图3为采用图1中磁传感器的制备方法制备的磁传感器的有效磁阻复合层的结构示意图。
附图标号说明：
标号 名称 标号 名称
1 半导体衬底 33 沉积槽
2 第一绝缘层 4 薄膜电极
3 磁阻复合层 5 第二绝缘层
31 有效磁阻复合层 6 光刻胶层
32 工艺磁阻复合层    
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，若本申请实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
本申请提供一种磁传感器的制备方法，图1为本申请提供的磁传感器的制备方法的一实施例的流程示意图，图2为采用图1中磁传感器的制备方法制备的磁传感器的工艺过程图，图3为采用图1中磁传感器的制备方法制备的磁传感器的有效磁阻复合层的结构示意图。
请参阅图1至图3，本申请提供磁传感器的制备方法包括以下步骤：
步骤S10、提供半导体衬底1，在所述半导体衬底1表面形成第一绝缘层2，在所述第一绝缘层2上形成磁阻复合层3，其中，所述磁阻复合层3包括有效磁阻复合层31以及工艺磁阻复合层32；
需要说明的是，所述半导体衬底1可以是硅衬底、锗衬底、氮化镓衬底等其中的一种，一实施例中，所述半导体衬底1为硅基片衬底。
对应的所述第一绝缘层2的材质可以是氧化硅、氧化锗等等材质中的一种，一实施例中，所述第一绝缘层2的材质为氧化硅。
一实施例中，请参阅图3，所述磁阻复合层3包括依次叠设的底层、反铁磁钉扎层、铁磁被钉扎层、非磁性间层、软磁自由层以及保护层，其中，所述底层形成于所述第一绝缘层2上，所述磁阻复合层3为多层膜的一个复合结构，在所述第一绝缘层2上常采用磁控溅射工艺形成，磁控溅射是物理气相沉积的一种，具有设备简单、易于控制、镀膜面积大和附着力强等优点，本领域中有大量使用，此处不作进一步地详细叙述。
一实施例中，所述磁阻复合层3可以为巨磁阻复合层3或隧道磁阻复合层3。
一实施例中，所述磁阻复合层3的厚度为30~40nm。
在所述硅衬底上形成所述氧化硅绝缘层，可以采用热氧化工艺制备，该工艺中，硅与含有氧化物质的气体，例如水汽和氧气，在高温下进行化学反应，而在硅片表面产生一层致密的二氧化硅薄膜，所述热氧化工艺在本领域中有大量使用，此处不作进一步地详细叙述。
另外，需要说明的是，本实施例中所述的有效磁阻复合层31以及工艺磁阻复合层32为一个所述磁阻复合层3平面内对应的不同区域的膜结构，具体为，所述有效磁阻复合层31位于所述磁阻复合层3的中部位置，所述工艺磁阻复合层32位于所述有效磁阻复合层31的两侧，所述有效磁阻复合层31是最终需要保留的膜结构，所述工艺磁阻复合层32是最终需要清除的膜结构，仅作为一个中间过程存在的膜结构。
步骤S20、采用光刻技术在所述磁阻复合层3表面形成沉积槽33，并在所述沉积槽33内形成薄膜电极4；
光刻技术是利用光学-化学反应原理和化学、物理刻蚀方法，将电路图形传递到单晶表面或介质层上，形成有效图形窗口或功能图形的工艺技术。
光刻技术也是指在光照作用下，借助光致抗蚀剂将掩膜版上的图形转移到基片上的技术，其主要过程为：首先紫外光通过掩膜版照射到附有一层光致抗蚀剂的基片表面，引起曝光区域的光刻胶发生化学反应；再通过显影技术溶解去除曝光区域或未曝光区域的光刻胶（前者称正性光刻胶，后者称负性光刻胶），使掩膜版上的图形被复制到光刻胶薄膜上；最后利用刻蚀技术将图形转移到基片上。
在采用光刻技术在所述磁阻复合层3表面形成沉积槽33的实施例中采用的光致抗蚀剂为负性光刻胶，负性光刻胶在光照显影时，保留的是未曝光区域的部分，结合光强的影响，所述负性光刻胶显影之后的图形为一个倒立的梯形，该图形与所述磁阻复合层3表面的边缘之间无接触，因此，在所述沉积槽33内形成薄膜电极4时，减少光刻胶在所述磁阻复合层3表面的边缘处固化的风险，提高了成型所述有效磁阻复合层31的成型精度，提高了器件的成型质量。
另外，需要说明的是，在所述光刻技术中，采用有机溶剂去除光致抗蚀剂，所述有机溶剂为丙酮或者异丙醇。
一实施例中，在所述磁阻复合层3表面形成沉积槽33的刻蚀工艺为离子束刻蚀工艺，离子束刻蚀也称为离子铣，是指当定向高能离子向固体靶撞击时，能量从入射离子转移到固体表面原子上，如果固体表面原子间结合能低于入射离子能量时，固体表面原子就会被移开或从表面上被除掉，通常离子束刻蚀所用的离子来自惰性气体。
离子束最小直径约10nm，离子束刻蚀的结构最小可能不会小于10nm。聚焦离子束刻蚀的束斑可达100nm以下，最少的达到10nm，获得最小线宽12nm的加工结果。相比电子与固体相互作用，离子在固体中的散射效应较小，并能以较快的直写速度进行小于50nm的刻蚀，故而聚焦离子束刻蚀是纳米加工的一种理想方法。此外聚焦离子束技术的另一优点是在计算机控制下的无掩膜注入，甚至无显影刻蚀，直接制造各种纳米器件结构，很方便去刻蚀形成所述沉积槽33，离子束刻蚀工艺在本领域中有大量使用，此处不作进一步地详细叙述。
一实施例中，在所述沉积槽33内形成薄膜电极4的工艺为电子束蒸发工艺，电子束蒸发是真空蒸镀的一种方式，它是在钨丝蒸发的基础上发展起来的，电子束是一种高速的电子流，电子束蒸发是目前真空镀膜技术中一种成熟且主要的镀膜方法，电子束蒸发工艺在本领域中有大量使用，此处不作进一步地详细叙述。
一实施例中，所述薄膜电极4的材质为铝、铬、钛以及金中的一种或者多种。
一实施例中，所述薄膜电极4的厚度为200~300nm。
步骤S30、在所述磁阻复合层3以及所述薄膜电极4的表面形成第二绝缘层5，采用光刻技术去除所述工艺磁阻复合层32对应的所述第二绝缘层5，以使得所述工艺磁阻复合层32表面显露；
需要说明的是，采用光刻技术去除所述工艺磁阻复合层32对应的所述第二绝缘层5采用的光致抗蚀剂为正性光刻胶，正性光刻胶在光照显影时，保留的是曝光区域的部分，结合光强的影响，所述正性光刻胶显影之后的图形为一个正立的梯形，在去除所述第二绝缘层5时可以使剩余的所述第二绝缘层5获得很好地边缘质量，提高了硬质掩膜的精度，保证了后续成型器件的成型质量。
一实施例中，在所述磁阻复合层3以及所述薄膜电极4的表面形成第二绝缘层5的工艺为化学气相沉积工艺，化学气相沉积是一种化工技术，该技术主要是利用含有薄膜元素的一种或几种气相化合物或单质、在衬底表面上进行化学反应生成薄膜的方法。化学气相淀积是近几十年发展起来的制备无机材料的新技术。化学气相淀积法已经广泛用于提纯物质、研制新晶体、淀积各种单晶、多晶或玻璃态无机薄膜材料。这些材料可以是氧化物、硫化物、氮化物、碳化物，也可以是III-V、II-IV、IV-VI族中的二元或多元的元素间化合物，而且它们的物理功能可以通过气相掺杂的淀积过程精确控制，化学气相沉积工艺在本领域中有大量使用，此处不作进一步地详细叙述。
一实施例中，去除所述工艺磁阻复合层32对应的所述第二绝缘层5的刻蚀工艺为反应离子刻蚀工艺，反应离子腐蚀技术是一种各向异性很强、选择性高的干法腐蚀技术，它是在真空系统中利用分子气体等离子来进行刻蚀的，利用了离子诱导化学反应来实现各向异性刻蚀，即是利用离子能量来使被刻蚀层的表面形成容易刻蚀的损伤层和促进化学反应，同时离子还可清除表面生成物以露出清洁的刻蚀表面的作用，该刻蚀工艺的环境温度较低，在20~35°C，反应温度较低，降低了光刻胶层6硬化的风险，反应离子刻蚀工艺在本领域中有大量使用，此处不作进一步地详细叙述。
一实施例中，所述第二绝缘层5的厚度为200~300nm
一实施例中，所述第二绝缘层5的材质为氮化硅或者氧化硅。
步骤S40、以所述有效磁阻复合层31对应的第二绝缘层5为硬质掩膜，刻蚀所述工艺磁阻复合层32；
需要说明的是，相对所述光刻胶层6而言，所述第二绝缘层5的材质质地较硬，以此作为硬质掩膜，能很好地成型对应掩膜的图案，提高成型精度。
一实施例中，刻蚀所述工艺磁阻复合层32的刻蚀工艺为离子束刻蚀工艺，离子束刻蚀也称为离子铣，是指当定向高能离子向固体靶撞击时，能量从入射离子转移到固体表面原子上，如果固体表面原子间结合能低于入射离子能量时，固体表面原子就会被移开或从表面上被除掉，通常离子束刻蚀所用的离子来自惰性气体。
离子束最小直径约10nm，离子束刻蚀的结构最小可能不会小于10nm。聚焦离子束刻蚀的束斑可达100nm以下，最少的达到10nm，获得最小线宽12nm的加工结果。相比电子与固体相互作用，离子在固体中的散射效应较小，并能以较快的直写速度进行小于50nm的刻蚀，故而聚焦离子束刻蚀是纳米加工的一种理想方法。此外聚焦离子束技术的另一优点是在计算机控制下的无掩膜注入，甚至无显影刻蚀，直接制造各种纳米器件结构，很方便去刻蚀形成所述沉积槽33，离子束刻蚀工艺在本领域中有大量使用，此处不作进一步地详细叙述。
步骤S50、采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极4的表面至少部分显露；
需要说明的是，所述采用光刻技术去除部分所述硬质掩膜的光致抗蚀剂为正性光刻胶，正性光刻胶在光照显影时，保留的是曝光区域的部分，结合光强的影响，所述正性光刻胶显影之后的图形为一个正立的梯形，在去除所述硬质掩膜时可以使剩余的所述硬质掩膜获得很好地边缘质量，提高了型器件的成型质量。
一实施例中，去除部分所述硬质掩膜的刻蚀工艺为反应离子刻蚀工艺，反应离子腐蚀技术是一种各向异性很强、选择性高的干法腐蚀技术，它是在真空系统中利用分子气体等离子来进行刻蚀的，利用了离子诱导化学反应来实现各向异性刻蚀，即是利用离子能量来使被刻蚀层的表面形成容易刻蚀的损伤层和促进化学反应，同时离子还可清除表面生成物以露出清洁的刻蚀表面的作用，该刻蚀工艺的环境温度较低，在20~35°C，反应温度较低，降低了光刻胶层6硬化的风险，反应离子刻蚀工艺在本领域中有大量使用，此处不作进一步地详细叙述。
本申请的技术方案中提供半导体衬底1，在所述半导体衬底1表面形成第一绝缘层2，在所述第一绝缘层2上形成磁阻复合层3，采用光刻技术在所述磁阻复合层3表面形成沉积槽33，并在所述沉积槽33内形成薄膜电极4，在所述磁阻复合层3以及所述薄膜电极4的表面形成第二绝缘层5，采用光刻技术去除所述工艺磁阻复合层32对应的所述第二绝缘层5，以使得所述工艺磁阻复合层32表面显露，以所述有效磁阻复合层31对应的第二绝缘层5为硬质掩膜，刻蚀所述工艺磁阻复合层32，采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极4的表面至少部分显露，采用所述第二绝缘层5为硬质掩膜刻蚀所述工艺磁阻复合层32以获得有效磁阻复合层31，提高了所述有效磁阻复合层31成型精度，进而提高了产品质量，具有较好的效果。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (10)

  1. 一种磁传感器的制备方法，其中，包括以下步骤：
    提供半导体衬底，在所述半导体衬底表面形成第一绝缘层，在所述第一绝缘层上形成磁阻复合层，其中，所述磁阻复合层包括有效磁阻复合层以及工艺磁阻复合层；
    采用光刻技术在所述磁阻复合层表面形成沉积槽，并在所述沉积槽内形成薄膜电极；
    在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层，采用光刻技术去除所述工艺磁阻复合层对应的所述第二绝缘层，以使得所述工艺磁阻复合层表面显露；
    以所述有效磁阻复合层对应的第二绝缘层为硬质掩膜，刻蚀所述工艺磁阻复合层；
    采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极的表面至少部分显露。
  2. 如权利要求1所述的磁传感器的制备方法，其中，所述提供半导体衬底，在所述半导体衬底表面形成第一绝缘层，在所述第一绝缘层上形成磁阻复合层的步骤中：
    所述半导体衬底为硅基片；和/或，
    所述第一绝缘层的材质为氧化硅；和/或，
    在所述半导体衬底表面形成第一绝缘层的工艺为热氧化工艺；和/或，
    在所述第一绝缘层上形成磁阻复合层的工艺为磁控溅射工艺。
  3. 如权利要求1所述的磁传感器的制备方法，其中，所述磁阻复合层的厚度为30~40nm；和/或，
    所述磁阻复合层包括依次叠设的底层、反铁磁钉扎层、铁磁被钉扎层、非磁性间层、软磁自由层以及保护层，其中，所述底层形成于所述第一绝缘层上；和/或，
    所述磁阻复合层为巨磁阻复合层或隧道磁阻复合层中的一种。
  4. 如权利要求1所述的磁传感器的制备方法，其中，所述采用光刻技术在所述磁阻复合层表面形成沉积槽，并在所述沉积槽内形成薄膜电极的步骤中：
    采用的光致抗蚀剂为负性光刻胶；和/或，
    在所述磁阻复合层表面形成沉积槽的刻蚀工艺为离子束刻蚀工艺；和/或，
    在所述沉积槽内形成薄膜电极的工艺为电子束蒸发工艺。
  5. 如权利要求1所述的磁传感器的制备方法，其中，所述薄膜电极的材质为铝、铬、钛以及金中的一种或者多种；和/或，
    所述薄膜电极的厚度为200~300nm。
  6. 如权利要求1所述的磁传感器的制备方法，其中，所述在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层，采用光刻技术去除所述工艺磁阻复合层对应的所述第二绝缘层，以使得所述工艺磁阻复合层表面显露的步骤中：
    采用的光致抗蚀剂为正性光刻胶；和/或，
    在所述磁阻复合层以及所述薄膜电极的表面形成第二绝缘层的工艺为化学气相沉积工艺；和/或，
    去除所述工艺磁阻复合层对应的所述第二绝缘层的刻蚀工艺为反应离子刻蚀工艺。
  7. 如权利要求1所述的磁传感器的制备方法，其中，所述第二绝缘层的厚度为200~300nm；和/或，
    所述第二绝缘层的材质为氮化硅或者氧化硅。
  8. 如权利要求1所述的磁传感器的制备方法，其中，所述以所述有效磁阻复合层对应的第二绝缘层为硬质掩膜，刻蚀所述工艺磁阻复合层的步骤中：
    刻蚀所述工艺磁阻复合层的刻蚀工艺为离子束刻蚀工艺。
  9. 如权利要求1所述的磁传感器的制备方法，其中，所述采用光刻技术去除部分所述硬质掩膜，以使得所述薄膜电极的表面至少部分显露的步骤中：
    采用的光致抗蚀剂为正性光刻胶；和/或，
    去除部分所述硬质掩膜的刻蚀工艺为反应离子刻蚀工艺。
  10. 如权利要求1所述的磁传感器的制备方法，其中，在所述光刻技术中，采用有机溶剂去除光致抗蚀剂，所述有机溶剂为丙酮或者异丙醇。
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