CN115522161A - 一种盾构机主轴承游隙监测传感器制备方法 - Google Patents
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Abstract
本发明公开了一种盾构机主轴承游隙监测传感器制备方法,涉及盾构机主轴承游隙监测传感器技术领域,有益效果在于:本发明采用了非接触式的制备工艺并突破的复杂的传感器制备工艺;本发明提高了检测的数据精确性以及参数获取的可靠性,能够实现测距检测。
Description
技术领域
本发明涉及盾构机主轴承游隙监测传感器技术领域,特别是涉及一种盾构机主轴承游隙监测传感器制备方法。
背景技术
随着我国基建行业的大力发展,盾构在公路、水利、地铁、铁路等工程领域广泛应用,预计至2022年,我国地铁、公路、铁路等隧道总长度将超过10000公里,其中中长及特长隧道约占2/3。盾构机主驱动轴承作为整个装备运行的关键零部件,在施工工程中需要经常检查、维修保养并定期通过采集油液进行定期分析判断,确保机器运行的可靠性。
当前的游隙测量方法大都是在轴承未安装时,将轴承水平放置,把内圈或外圈水平放置在水平垫块上,将百分表定在外圈或内圈上,抬外圈或内圈,看表的指针动几丝,以此来确定轴向游隙。现有方法无法进行轴承游隙的在线测量,因此设计一种测距传感器对轴承游隙进行在线测量尤为重要。
本发明针对盾构掘进过程主驱动轴承无法进行轴承游隙的在线测量的问题,设计了一种盾构机主轴承游隙监测传感器制备方法用于实现对轴承游隙的实时监测,保障工作的可靠性。
发明内容
本发明的目的就在于为了解决上述问题而提供一种盾构机主轴承游隙监测传感器制备方法。
本发明通过以下技术方案来实现上述目的:
一种盾构机主轴承游隙监测传感器制备方法,包括具体实施步骤如下:
步骤1:选取硅片晶圆;
步骤2:在硅片背面进行激光打标,方便后续不同工艺条件试验后对硅片进行有效区分,使用干法热氧化与湿法热氧化相结合工艺,在衬底底部生长一层致密的氧化层作为保护;在表面沉积一层磷硅酸盐玻璃层,晶片在氩气中退火,使磷掺杂剂进入硅层的顶部表面;
步骤3:使用湿化学蚀刻去除PSG层;
步骤4:在表面生长热氧化物,然后在晶片上涂上正极光刻胶,通过光刻胶对第一层掩膜曝光,然后显影,形成光刻图案;
步骤5:采用反应溅射的方法在晶片上沉积压电氮化铝薄膜,然后在硅片上涂上正极光刻胶,通过光刻胶通过第二级掩膜曝光,然后显影,形成光刻图案;
步骤6:通过电子束蒸发法在表面沉积铬和铝,然后涂上负光刻胶,通过三层掩膜将光刻胶曝光、显影,然后将光刻胶溶解,在开口区域留下金属;
步骤7:在表面制备一层聚酰亚胺涂层用于保护顶部表面;
步骤8:首先用反应离子蚀刻去除底部氧化层,然后在硅片的底部涂光刻胶,通过第五层掩模版使用DRIE硅蚀刻完全刻穿基板层,停止在氧化物层上,蚀刻完成后,除去光刻胶,然后使用湿氧化蚀刻工艺去除沟槽掩膜脱去的区域中的氧化层;使用干法刻蚀剥离前面过程的保护材料,达到间隙传感器的制备。
优选的:所述步骤1中的硅片晶圆的规格为P<100>,单抛,电阻率0.5-100Ωcm,直径为8inch。
优选的:所述步骤2中晶片在1050℃氩气中退火1小时。
优选的:所述步骤4的热氧化物的生长厚度为2000埃。
优选的:所述步骤6中铬和铝的厚度分别为20nm和1000nm。
与现有技术相比,本发明的有益效果在于:
1.本发明采用了非接触式的制备工艺并突破的复杂的传感器制备工艺。
2.本发明提高了检测的数据精确性以及参数获取的可靠性,能够实现测距检测。
具体实施方式
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通,对于本领域的普通技术人员而言,可以通过具体情况理解上述术语在本发明中的具体含义。
下面对本发明作进一步说明:
一种盾构机主轴承游隙监测传感器制备方法,包括具体实施步骤如下:
步骤1:选取规格为P<100>,单抛,电阻率0.5-100Ωcm,8inch的硅片晶圆;
步骤2:在硅片背面进行激光打标,方便后续不同工艺条件试验后对硅片进行有效区分,使用干法热氧化与湿法热氧化相结合工艺,在衬底底部生长一层致密的氧化层作为保护;在表面沉积一层磷硅酸盐玻璃层(PSG),晶片在1050℃氩气中退火1小时,使磷掺杂剂进入硅层的顶部表面;
步骤3:使用湿化学蚀刻去除PSG层;
步骤4:在表面生长2000埃的热氧化物。然后在晶片上涂上正极光刻胶,通过光刻胶对第一层掩膜(PADOXIDE)曝光,然后显影,形成光刻图案;
步骤5:采用反应溅射的方法在晶片上沉积压电氮化铝薄膜。然后在硅片上涂上正极光刻胶,通过光刻胶通过第二级掩膜(PZFILMD)曝光,然后显影,形成光刻图案;
步骤6:通过电子束蒸发法在表面沉积20 nm的铬和1000 nm的铝,然后涂上负光刻胶,通过三层掩膜(PADMETAL)将光刻胶曝光、显影,然后将光刻胶溶解,在开口区域留下金属;
步骤7:在表面制备一层聚酰亚胺涂层用于保护顶部表面;
步骤8:首先用反应离子蚀刻(RIE)去除底部氧化层。然后在硅片的底部涂光刻胶,通过第五层(TRENCH)掩模版使用DRIE硅蚀刻完全刻穿基板层,停止在氧化物层上。蚀刻完成后,除去光刻胶,然后使用湿氧化蚀刻工艺去除沟槽掩膜脱去的区域中的氧化层;使用干法刻蚀剥离前面过程的保护材料,达到间隙传感器的制备。
以上显示和描述了本发明的基本原理、主要特征和优点,本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。
Claims (5)
1.一种盾构机主轴承游隙监测传感器制备方法,其特征在于:包括具体实施步骤如下:
步骤1:选取硅片晶圆;
步骤2:在硅片背面进行激光打标,方便后续不同工艺条件试验后对硅片进行有效区分,使用干法热氧化与湿法热氧化相结合工艺,在衬底底部生长一层致密的氧化层作为保护;在表面沉积一层磷硅酸盐玻璃层,晶片在氩气中退火,使磷掺杂剂进入硅层的顶部表面;
步骤3:使用湿化学蚀刻去除PSG层;
步骤4:在表面生长热氧化物,然后在晶片上涂上正极光刻胶,通过光刻胶对第一层掩膜曝光,然后显影,形成光刻图案;
步骤5:采用反应溅射的方法在晶片上沉积压电氮化铝薄膜,然后在硅片上涂上正极光刻胶,通过光刻胶通过第二级掩膜曝光,然后显影,形成光刻图案;
步骤6:通过电子束蒸发法在表面沉积铬和铝,然后涂上负光刻胶,通过三层掩膜将光刻胶曝光、显影,然后将光刻胶溶解,在开口区域留下金属;
步骤7:在表面制备一层聚酰亚胺涂层用于保护顶部表面;
步骤8:首先用反应离子蚀刻去除底部氧化层,然后在硅片的底部涂光刻胶,通过第五层掩模版使用DRIE硅蚀刻完全刻穿基板层,停止在氧化物层上,蚀刻完成后,除去光刻胶,然后使用湿氧化蚀刻工艺去除沟槽掩膜脱去的区域中的氧化层;使用干法刻蚀剥离前面过程的保护材料,达到间隙传感器的制备。
2.根据权利要求1所述的一种盾构机主轴承游隙监测传感器制备方法,其特征在于:所述步骤1中的硅片晶圆的规格为P<100>,单抛,电阻率0.5-100Ωcm,直径为8inch。
3.根据权利要求1所述的一种盾构机主轴承游隙监测传感器制备方法,其特征在于:所述步骤2中晶片在1050℃氩气中退火1小时。
4.根据权利要求1所述的一种盾构机主轴承游隙监测传感器制备方法,其特征在于:所述步骤4的热氧化物的生长厚度为2000埃。
5.根据权利要求1所述的一种盾构机主轴承游隙监测传感器制备方法,其特征在于:所述步骤6中铬和铝的厚度分别为20nm和1000nm。
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