WO2022091821A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- WO2022091821A1 WO2022091821A1 PCT/JP2021/038301 JP2021038301W WO2022091821A1 WO 2022091821 A1 WO2022091821 A1 WO 2022091821A1 JP 2021038301 W JP2021038301 W JP 2021038301W WO 2022091821 A1 WO2022091821 A1 WO 2022091821A1
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- Prior art keywords
- waveguide
- chamber
- plasma processing
- gas
- processing apparatus
- Prior art date
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- 239000004020 conductor Substances 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 106
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.
- Patent Document 1 discloses a parallel plate type plasma processing apparatus as a kind of plasma processing apparatus.
- the plasma processing apparatus of Patent Document 1 includes a chamber and an upper electrode.
- the upper electrode constitutes a shower head.
- the shower head introduces the film-forming gas into the chamber.
- the upper electrode is connected to a high frequency power supply.
- the high frequency power supply supplies high frequency power to the upper electrode.
- the high frequency power supplied to the top electrodes creates a high frequency electric field in the chamber.
- the generated high frequency electric field excites the film forming gas in the chamber to generate plasma.
- chemical species from plasma are deposited on the substrate to form a film on the substrate.
- the plasma processing apparatus of Patent Document 1 has a function of cleaning the chamber. Specifically, the plasma processing apparatus of Patent Document 1 is configured to introduce a chemical species such as a radical of a cleaning gas from a remote plasma into the chamber from the side wall of the chamber.
- a chemical species such as a radical of a cleaning gas from a remote plasma into the chamber from the side wall of the chamber.
- the present disclosure provides a technique for shortening the length of a resonance portion in a waveguide of electromagnetic waves in a plasma processing apparatus that generates plasma in a chamber by electromagnetic waves.
- a plasma processing apparatus in one exemplary embodiment, includes a chamber and a waveguide.
- the waveguide is configured to propagate electromagnetic waves, which are VHF or UHF waves, to generate plasma in the chamber.
- the waveguide includes a resonance portion that resonates an electromagnetic wave there.
- the resonant section includes a first waveguide, a second waveguide, and a load impedance section.
- the first waveguide has a first characteristic impedance.
- the second waveguide has a second characteristic impedance.
- the second waveguide is terminated at a short circuit end having a ground potential.
- the load impedance portion is connected between the first waveguide and the second waveguide.
- the second characteristic impedance is larger than the first characteristic impedance.
- a plasma processing apparatus in one exemplary embodiment, includes a chamber and a waveguide.
- the waveguide is configured to propagate electromagnetic waves, which are VHF or UHF waves, to generate plasma in the chamber.
- the waveguide includes a resonance portion that resonates an electromagnetic wave there.
- the resonant section includes a first waveguide, a second waveguide, and a load impedance section.
- the first waveguide has a first characteristic impedance.
- the second waveguide has a second characteristic impedance.
- the second waveguide is terminated at a short circuit end having a ground potential.
- the load impedance portion is connected between the first waveguide and the second waveguide.
- the second characteristic impedance is larger than the first characteristic impedance.
- the resonance condition is satisfied in the resonance portion even if the length of the second waveguide is short. Therefore, in a plasma processing device that generates plasma in a chamber by electromagnetic waves, it is possible to shorten the length of the resonance portion in the waveguide portion of the electromagnetic waves.
- the length of the first waveguide and the length of the second waveguide may be substantially the same.
- the length of the second waveguide which is the length of the resonant portion, may have a length of less than 1/8 of the effective wavelength of the electromagnetic wave in the resonant portion.
- the first waveguide may be provided by a first coaxial tube containing an inner conductor and an outer conductor.
- the load impedance portion may extend along the direction in which the first coaxial tube extends continuously to the first waveguide.
- the second waveguide may be provided by a second coaxial tube including an inner conductor and an outer conductor which are outer conductors of the first coaxial tube so as to surround the first waveguide and the load impedance portion. It may be extended. In the resonant portion, the second waveguide may be folded back with respect to a portion composed of the first waveguide and the load impedance.
- the plasma processing apparatus may further include a dielectric portion.
- the dielectric portion is formed of a dielectric material and is disposed between the inner conductor of the first coaxial tube and the outer conductor of the first coaxial tube.
- the dielectric portion may extend along the inner conductor of the first coaxial tube so as to protrude from the end of the first waveguide to a position in the load impedance portion.
- the dielectric portion since the dielectric portion extends from the second waveguide so as to hide the inner conductor of the first coaxial tube, abnormal discharge in the resonance portion such as arc discharge and lead surface discharge is suppressed.
- the inner conductor of the first coaxial tube may constitute a gas supply tube.
- the plasma processing apparatus may further include a substrate support, a shower head, and an introduction.
- the substrate support is provided in the chamber.
- the shower head is made of metal and is provided above the substrate support.
- the shower head provides a plurality of gas holes that open toward the space in the chamber.
- the introduction portion is formed of a dielectric and is provided along the outer periphery of the shower head or along the side wall of the chamber so as to introduce electromagnetic waves into the chamber from there.
- the gas supply pipe extends vertically above the chamber and is connected to the upper center of the shower head to provide a waveguide connected to the resonant section between the resonant section and the introduction section. There is.
- the plasma processing apparatus may further include an electromagnetic wave supply path.
- the gas supply pipe may include an annular collar.
- the supply path may include a conductor connected to the collar.
- the resonance portion may be provided above the flange portion with respect to the chamber.
- the plasma processing apparatus may further include a first gas source, a second gas source, and a remote plasma source.
- the first gas source is a gas source of the formed gas and is connected to the gas supply pipe.
- the second gas source is a gas source for cleaning gas.
- the remote plasma source is connected between the second gas source and the gas supply pipe.
- the film-forming gas may contain a silicon-containing gas.
- the cleaning gas may include a halogen-containing gas.
- FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to one exemplary embodiment.
- FIG. 2 is a partially enlarged view of the plasma processing apparatus shown in FIG.
- FIG. 3 is a cross-sectional view taken along lines III-III of FIG.
- FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG.
- the plasma processing apparatus 1 shown in FIGS. 1 to 4 is configured to generate plasma by electromagnetic waves.
- the electromagnetic wave is a VHF wave or a UHF wave.
- the band of the VHF wave is 30 MHz to 300 MHz, and the band of the UHF wave is 300 MHz to 3 GHz.
- the plasma processing device 1 includes a chamber 10.
- the chamber 10 defines an internal space.
- the substrate W is processed in the internal space of the chamber 10.
- the chamber 10 has an axis AX as its central axis.
- the axis AX is an axis extending in the vertical direction.
- the chamber 10 may include a chamber body 12.
- the chamber body 12 has a substantially cylindrical shape and is opened at the upper portion thereof.
- the chamber body 12 provides a side wall and a bottom of the chamber 10.
- the chamber body 12 is made of a metal such as aluminum.
- the chamber body 12 is grounded.
- the side wall of the chamber body 12 provides a passage 12p.
- the substrate W passes through the passage 12p as it is transported between the inside and the outside of the chamber 10.
- the passage 12p can be opened and closed by the gate valve 12v.
- the gate valve 12v is provided along the side wall of the chamber body 12.
- the chamber 10 may further include an upper wall 14.
- the upper wall 14 is made of a metal such as aluminum.
- the upper wall 14 closes the upper opening of the chamber body 12 together with the cover conductor described later.
- the upper wall 14 is grounded together with the chamber body 12.
- the bottom of the chamber 10 provides an exhaust port.
- the exhaust port is connected to the exhaust device 16.
- the exhaust device 16 includes a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbo molecular pump.
- the plasma processing device 1 may further include a substrate support portion 18.
- the substrate support portion 18 is provided in the chamber 10.
- the substrate support portion 18 is configured to support the substrate W placed on the substrate support portion 18.
- the substrate W is placed on the substrate support portion 18 in a substantially horizontal state.
- the substrate support portion 18 may be supported by the support member 19.
- the support member 19 extends upward from the bottom of the chamber 10.
- the substrate support portion 18 and the support member 19 may be formed of a dielectric material such as aluminum nitride.
- the plasma processing device 1 may further include a shower head 20.
- the shower head 20 is made of a metal such as aluminum.
- the shower head 20 has a substantially disk shape and may have a hollow structure.
- the shower head 20 shares the axis AX as its central axis.
- the shower head 20 is provided above the substrate support portion 18 and below the upper wall 14.
- the shower head 20 constitutes a top portion that defines the internal space of the chamber 10.
- the shower head 20 provides a plurality of gas holes 20h.
- the plurality of gas holes 20h are open toward the internal space of the chamber 10.
- the shower head 20 further provides a gas diffusion chamber 20c therein.
- the plurality of gas holes 20h are connected to the gas diffusion chamber 20c and extend downward from the gas diffusion chamber 20c.
- the plasma processing device 1 may further include a gas supply pipe 22.
- the gas supply pipe 22 is a cylindrical pipe.
- the gas supply pipe 22 is made of a metal such as aluminum.
- the gas supply pipe 22 extends in the vertical direction above the shower head 20.
- the gas supply pipe 22 shares the axis AX as its central axis.
- the lower end of the gas supply pipe 22 is connected to the center of the upper part of the shower head 20.
- the upper center of the shower head 20 provides a gas inlet.
- the inlet is connected to the gas diffusion chamber 20c.
- the gas supply pipe 22 supplies gas to the shower head 20.
- the gas from the gas supply pipe 22 is introduced into the chamber 10 through the plurality of gas holes 20h via the inlet of the shower head 20 and the gas diffusion chamber 20c.
- the plasma processing apparatus 1 may further include a first gas source 24, a second gas source 26, and a remote plasma source 28.
- the first gas source 24 is connected to the gas supply pipe 22.
- the first gas source 24 can be a gas source for the film-forming gas.
- the film-forming gas may contain a silicon-containing gas.
- the silicon-containing gas contains, for example, SiH 4 .
- the film-forming gas may further contain other gases.
- the film-forming gas may further contain NH 3 gas, N 2 gas, a rare gas such as Ar, and the like.
- the gas from the first gas source 24 (for example, the film-forming gas) is introduced into the chamber 10 from the shower head 20 via the gas supply pipe 22.
- the second gas source 26 is connected to the gas supply pipe 22 via the remote plasma source 28.
- the second gas source 26 can be a gas source for cleaning gas.
- the cleaning gas may contain a halogen-containing gas.
- the halogen-containing gas contains, for example, NF 3 and / or Cl 2 .
- the cleaning gas may further contain other gases.
- the cleaning gas may further contain a noble gas such as Ar.
- the remote plasma source 28 excites the gas from the second gas source 26 at a place away from the chamber 10 to generate plasma.
- the remote plasma source 28 produces plasma from the cleaning gas.
- the remote plasma source 28 may be any type of plasma source. Examples of the remote plasma source 28 include a capacitively coupled plasma source, an inductively coupled plasma source, and a plasma source of a type that generates plasma by microwaves. Radicals in the plasma generated in the remote plasma source 28 are introduced into the chamber 10 from the shower head 20 via the gas supply pipe 22.
- the gas supply pipe 22 may have a relatively large diameter.
- the outer diameter (diameter) of the gas supply pipe 22 is, for example, 40 mm or more.
- the outer diameter (diameter) of the gas supply pipe 22 is 80 mm.
- the gas supply pipe 22 has a cylindrical shape, and the outer diameter (diameter) of the gas supply pipe 22 is the outer diameter of the gas supply pipe 22 at the other portion 22a of the flange portion 22f.
- the annular flange portion 22f forms a part of the gas supply pipe 22 in the longitudinal direction.
- the flange portion 22f protrudes radially from the other portion 22a of the gas supply pipe 22.
- the gas supply pipe 22 may form a part of the waveguide 40, which will be described later.
- the shower head 20 is separated downward from the upper wall 14.
- the space between the shower head 20 and the upper wall 14 constitutes a part of the waveguide 30.
- the waveguide 30 also includes a space provided by the gas supply pipe 22 between the gas supply pipe 22 and the upper wall 14.
- the plasma processing device 1 may further include an introduction unit 32.
- the introduction portion 32 is formed of a dielectric such as aluminum oxide.
- the introduction portion 32 is provided along the outer periphery of the shower head 20 so as to introduce an electromagnetic wave into the chamber 10 from there.
- the introduction portion 32 has a ring shape.
- the introduction portion 32 closes the gap between the shower head 20 and the chamber body 12, and is connected to the waveguide 30.
- the introduction portion 32 may be provided along the side wall of the chamber 10.
- the plasma processing device 1 further includes a waveguide 40.
- the waveguide 40 is configured to propagate electromagnetic waves in order to generate plasma in the chamber 10.
- the waveguide 40 may be provided above the chamber 10.
- the plasma processing device 1 may further include an electromagnetic wave supply path 36.
- the supply path 36 is connected to the waveguide 40.
- the supply path 36 includes a conductor 36c.
- the conductor 36c of the supply path 36 is connected to the gas supply pipe 22. Specifically, one end of the conductor 36c is connected to the flange portion 22f.
- the plasma processing device 1 may further include a matching unit 50 and a power supply 60.
- the other end of the conductor 36c is connected to the power supply 60 via the matching unit 50.
- the power supply 60 is an electromagnetic wave generator.
- the matching box 50 has an impedance matching circuit.
- the impedance matching circuit is configured to match the impedance of the load of the power supply 60 with the output impedance of the power supply 60.
- the impedance matching circuit has a variable impedance.
- the impedance matching circuit can be, for example, a ⁇ -type circuit.
- the electromagnetic wave from the power supply 60 is transmitted from the introduction unit 32 to the chamber 10 via the matching device 50, the supply path 36 (conductor 36c), the waveguide section 40, and the waveguide section 30 around the shower head 20. Introduced within.
- This electromagnetic wave excites a gas (for example, a film-forming gas) from the first gas source 24 in the chamber 10 to generate plasma.
- the waveguide 40 includes a resonance section 42 that resonates an electromagnetic wave there.
- the resonance portion 42 is provided above the flange portion 22f.
- the resonance section 42 includes a first waveguide 42a, a second waveguide 42b, and a load impedance section 42c.
- the first waveguide 42a has a first characteristic impedance Z 1 .
- the second waveguide 42b has a second characteristic impedance Z 2 .
- the second waveguide 42b is terminated at the short circuit end 42e.
- the short circuit end 42e is made of metal and has a ground potential.
- the load impedance portion 42c is a waveguide connected between the first waveguide 42a and the second waveguide 42b.
- the first waveguide 42a is a waveguide having a cylindrical shape and extends in the vertical direction.
- the central axis of the first waveguide 42a substantially coincides with the axis AX.
- the first waveguide 42a is provided by a first coaxial tube 421.
- the first coaxial tube 421 includes an inner conductor 421i and an outer conductor 421o.
- the inner conductor 421i and the outer conductor 421o have a cylindrical shape.
- the inner conductor 421i and the outer conductor 421o share an axis AX as their central axis.
- the first waveguide 42a is formed between the inner conductor 421i and the outer conductor 421o.
- the inner conductor 421i may be provided by a gas supply pipe 22 (or portion 22a).
- the load impedance portion 42c extends along the direction in which the first coaxial tube 421 extends continuously to the first waveguide 42a.
- the load impedance portion 42c is connected to the second waveguide 42b.
- the second waveguide 42b is a waveguide having a cylindrical shape and extends in the vertical direction.
- the central axis of the second waveguide 42b substantially coincides with the axis AX.
- the second waveguide 42b extends so as to surround the first waveguide 42a and the load impedance portion 42c.
- the second waveguide 42b is folded back at the end 42d with respect to the portion composed of the first waveguide 42a and the load impedance portion 42c.
- the end 42d is made of metal and has a ground potential. Further, the lower end of the second waveguide 42b is terminated by a short-circuit end 42e extending substantially horizontally.
- the second waveguide 42b is provided by a second coaxial tube 422.
- the second coaxial tube 422 includes an inner conductor 422i and an outer conductor 422o.
- the inner conductor 422i and the outer conductor 422o have a cylindrical shape.
- the inner conductor 422i and the outer conductor 422o share an axis AX as their central axis.
- the second waveguide 42b is formed between the inner conductor 422i and the outer conductor 422o.
- the second coaxial tube 422 has an outer conductor 421o of the first coaxial tube 421 as its inner conductor 422i.
- the length L2 of the second waveguide 42b is substantially equal to the length of the resonant portion 42 in the vertical direction.
- the length L2 of the second waveguide 42b that is, the length of the resonance portion 42 in the vertical direction may be less than 1/8 of the effective wavelength ⁇ g of the electromagnetic wave in the resonance portion 42.
- the length L2 of the second waveguide 42b is substantially the same as the length L1 of the first waveguide 42a.
- the difference between the length L2 of the second waveguide 42b and the length L1 of the first waveguide 42a is 10% or less of ⁇ g / 8 from the viewpoint of eliminating reflection at the short-circuit end 42e. It may be present, and more preferably 5% or less.
- the length L3 of the load impedance portion 42c is similar to the difference between the length L2 of the second waveguide 42b and the length L1 of the first waveguide 42a, ignoring the plate thickness of the short-circuit end 42e.
- the length is 10% or less of ⁇ g / 8.
- the plasma processing device 1 may further include a cover conductor 44 and a dielectric portion 46.
- the cover conductor 44 has a substantially cylindrical shape.
- the cover conductor 44 surrounds the gas supply pipe 22 above the chamber 10.
- the cover conductor 44 is grounded and has a ground potential.
- the cover conductor 44 is connected to the gas supply pipe 22 at the upper end thereof. That is, the upper end of the cover conductor 44 closes the space between the cover conductor 44 and the gas supply pipe 22.
- the upper end of the cover conductor 44 may extend substantially horizontally and may provide the end 42d of the resonant portion 42. Further, the cover conductor 44 may provide the outer conductor 422o of the second coaxial tube 422.
- the cover conductor 44 may provide the outer conductor 421o of the first coaxial tube 421 and the inner conductor 422i of the second coaxial tube 422. Further, the cover conductor 44 may provide a short-circuit end 42e of the resonance portion 42.
- the outer conductor 421o of the first coaxial tube 421, the inner conductor 422i of the second coaxial tube 422, and the short-circuit end 42e of the resonance portion 42 may be formed of a conductor separate from the cover conductor 44.
- the lower end of the cover conductor 44 is connected to the chamber 10.
- the lower end of the cover conductor 44 may be connected to the upper wall 14.
- the cover conductor 44 may surround the conductor 36c.
- a conductor separate from the cover conductor 44 may surround the conductor 36c.
- the space between the cover conductor 44 and the conductor 36c may be filled with a dielectric portion. This dielectric portion may be integrated with the dielectric portion 46.
- the dielectric portion 46 is formed of a dielectric.
- the dielectric portion 46 is formed of, for example, polytetrafluoroethylene (PTFE).
- PTFE polytetrafluoroethylene
- the position of the lower end of the dielectric portion 46 inside the cover conductor 44 is substantially the same as the position of the lower surface of the flange portion 22f in the vertical direction.
- the dielectric portion 46 extends from the outer peripheral surface of the gas supply pipe 22 to the inner peripheral surface of the cover conductor 44 below the lower surface of the short-circuit end 42e.
- the dielectric portion 46 is arranged between the inner conductor 421i and the outer conductor 421o. That is, the space between the inner conductor 421i and the outer conductor 421o is filled with the dielectric portion 46.
- the dielectric portion 46 extends along the inner conductor 421i so as to project from the end (upper end) of the first waveguide 42a to a position within the load impedance portion 42c.
- the input impedance Z in of the resonance portion 42 is expressed by the following equation (1).
- Z L1 is the load impedance with respect to the first waveguide 42a, that is, the impedance of the load impedance portion 42c, and is represented by the following formula (2).
- Z L2 is the load impedance of the second waveguide 42b.
- ⁇ 1 and ⁇ 2 are electric angles represented by the following equations (3) and (4), respectively.
- the second characteristic impedance Z 2 is larger than the first characteristic impedance Z 1 . Therefore, as can be understood from the equations (7) and (4), even if the length L2 of the second waveguide 42b is shortened, the resonance condition is satisfied in the resonance portion 42. Therefore, according to the plasma processing device 1, the length of the resonance portion 42 can be shortened.
- the length of the resonant portion 42 can be less than 1/8 of the effective wavelength ⁇ g .
- the length of the resonance portion 42 may be about 1/16 of the effective wavelength ⁇ g .
- the dielectric portion 46 extends along the inner conductor 421i so as to protrude from the end (upper end) of the first waveguide 42a to a position in the load impedance portion 42c. It exists. In this case, since the dielectric portion 46 extends from the second waveguide 42b so as to hide the inner conductor 421i of the first coaxial tube 421, the inside of the resonance portion 42 such as arc discharge and lead surface discharge Abnormal discharge is suppressed.
- the gas supply pipe 22 is connected to the center of the upper part of the shower head 20, and the conductor 36c of the electromagnetic wave supply path 36 is connected to the flange portion 22f of the gas supply pipe 22. Therefore, the electromagnetic wave propagates uniformly around the gas supply pipe 22.
- the electromagnetic wave is introduced into the chamber 10 from the introduction portion 32 provided along the outer periphery of the shower head 20 via the gas supply pipe 22 and the shower head 20. Therefore, according to the plasma processing apparatus 1, it is possible to improve the uniformity of the distribution of the plasma density in the chamber 10.
- the deposits formed in the chamber 10 by the film forming process can be removed by radicals from the plasma of the cleaning gas. Since the radicals of the cleaning gas from the plasma are supplied through the gas supply pipe 22 and the shower head 20, their deactivation is suppressed and the radicals are uniformly supplied into the chamber 10. Therefore, according to the plasma processing apparatus 1, the chamber 10 can be cleaned uniformly and efficiently.
- a plasma processing device that uses VHF waves or UHF waves as electromagnetic waves, it is necessary to supply electromagnetic waves into the chamber through the center of the shower head in order to keep the distribution of plasma density in the chamber uniform.
- radicals for cleaning from the remote plasma source are sent into the chamber through a relatively thick gas supply pipe connected to the center of the shower head. Need to be introduced.
- the plasma processing apparatus it is difficult to achieve both the uniformity of the plasma density distribution and the uniformity of cleaning. The reason is that it is difficult to achieve both the introduction of electromagnetic waves into the chamber through the center of the shower head and the introduction of radicals into the chamber through the gas supply pipe connected to the center of the shower head. This is because the.
- the plasma processing apparatus 1 it is possible to improve the uniformity of the plasma density distribution in the chamber 10 and to improve the uniformity of cleaning in the chamber 10.
- Plasma processing device 10 ... Chamber, 40 ... Waveguide section, 42 ... Resonance section, 42a ... First waveguide, 42b ... Second waveguide, 42c ... Load impedance section.
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Abstract
Description
Claims (11)
- チャンバと、
前記チャンバ内でプラズマを生成するためにVHF波又はUHF波である電磁波を伝播する導波部であり、そこにおいて該電磁波を共振させる共振部を含む、該導波部と、
を備え、
前記共振部は、
第1の特性インピーダンスを有する第1の導波路と、
第2の特性インピーダンスを有し、グランド電位を有する短絡端において終端された第2の導波路と、
前記第1の導波路と前記第2の導波路との間で接続された負荷インピーダンス部と、
を含み、
前記第2の特性インピーダンスは、第1の特性インピーダンスよりも大きい、
プラズマ処理装置。 - 前記第1の導波路の長さと前記第2の導波路の長さは、実質的に同一である、請求項1に記載のプラズマ処理装置。
- 前記共振部の長さである前記第2の導波路の長さは、該共振部内での前記電磁波の実効波長の1/8未満の長さを有する、請求項2に記載のプラズマ処理装置。
- 前記第1の導波路は、内側導体及び外側導体を含む第1の同軸管によって提供されており、
前記負荷インピーダンス部は、前記第1の導波路に連続して前記第1の同軸管が延在する方向に沿って延在しており、
前記第2の導波路は、前記第1の同軸管の前記外側導体である内側導体及び外側導体を含む第2の同軸管によって提供されており、前記第1の導波路及び前記負荷インピーダンス部を囲むように延在しており、
前記共振部において、前記第2の導波路は、前記第1の導波路及び前記負荷インピーダンス部から構成される部分に対して折り返されている、
請求項1~3の何れか一項に記載のプラズマ処理装置。 - 誘電体材料から形成されており、前記第1の同軸管の前記内側導体と前記第1の同軸管の前記外側導体との間に配置された誘電体部を更に備え、
前記誘電体部は、前記第1の導波路の端部から前記負荷インピーダンス部の中の位置まで突き出るように、前記第1の同軸管の前記内側導体に沿って延在している、
請求項4に記載のプラズマ処理装置。 - 前記第1の同軸管の前記内側導体はガス供給管を構成している、請求項4又は5に記載のプラズマ処理装置。
- 前記チャンバ内に設けられた基板支持部と、
金属から形成されており、前記チャンバ内の空間に向けて開口した複数のガス孔を提供し、前記基板支持部の上方に設けられたシャワーヘッドと、
誘電体から形成されており、電磁波をそこから前記チャンバ内に導入するように前記シャワーヘッドの外周又は前記チャンバの側壁に沿って設けられた導入部と、
を更に備え、
前記ガス供給管は、前記チャンバの上方で鉛直方向に延在して、前記シャワーヘッドの上部中央に接続されており、前記共振部に接続された導波路を該共振部と前記導入部との間で提供している、請求項6に記載のプラズマ処理装置。 - 電磁波の供給路を更に備え、
前記ガス供給管は、環状の鍔部を含み、
前記供給路は、前記鍔部に接続された導体を含み、
前記共振部は、前記チャンバに対して前記鍔部の上方に設けられている、
請求項6又は7に記載のプラズマ処理装置。 - 前記ガス供給管に接続された成膜ガスの第1のガス源と、
クリーニングガスの第2のガス源と、
前記第2のガス源と前記ガス供給管との間で接続されたリモートプラズマ源と、
を更に備える、請求項6~8の何れか一項に記載のプラズマ処理装置。 - 前記成膜ガスは、シリコン含有ガスを含む、請求項9に記載のプラズマ処理装置。
- 前記クリーニングガスは、ハロゲン含有ガスを含む、請求項9又は10に記載のプラズマ処理装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04128393A (ja) * | 1990-09-19 | 1992-04-28 | Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk | ラジカル反応による無歪精密加工装置 |
JPH09106900A (ja) * | 1995-05-19 | 1997-04-22 | Hitachi Ltd | プラズマ処理方法及びプラズマ処理装置 |
JPH09293599A (ja) * | 1996-04-30 | 1997-11-11 | Hitachi Ltd | プラズマ処理方法および装置 |
JPH1025583A (ja) * | 1996-07-09 | 1998-01-27 | Yuzo Mori | 形状創成装置 |
JPH11900A (ja) * | 1997-06-12 | 1999-01-06 | Nikon Corp | 形状創成装置および制御方法 |
JP2003332320A (ja) * | 2002-03-07 | 2003-11-21 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
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JP5548028B2 (ja) | 2010-05-14 | 2014-07-16 | 株式会社ランドマークテクノロジー | 堆積チャンバのリモートクリーニング方法 |
-
2020
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- 2021-10-15 WO PCT/JP2021/038301 patent/WO2022091821A1/ja active Application Filing
- 2021-10-15 KR KR1020237016543A patent/KR20230087593A/ko unknown
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04128393A (ja) * | 1990-09-19 | 1992-04-28 | Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk | ラジカル反応による無歪精密加工装置 |
JPH09106900A (ja) * | 1995-05-19 | 1997-04-22 | Hitachi Ltd | プラズマ処理方法及びプラズマ処理装置 |
JPH09293599A (ja) * | 1996-04-30 | 1997-11-11 | Hitachi Ltd | プラズマ処理方法および装置 |
JPH1025583A (ja) * | 1996-07-09 | 1998-01-27 | Yuzo Mori | 形状創成装置 |
JPH11900A (ja) * | 1997-06-12 | 1999-01-06 | Nikon Corp | 形状創成装置および制御方法 |
JP2003332320A (ja) * | 2002-03-07 | 2003-11-21 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
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