WO2022088592A1 - Ensemble de puces del, panneau d'affichage, et procédés de préparation - Google Patents
Ensemble de puces del, panneau d'affichage, et procédés de préparation Download PDFInfo
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- WO2022088592A1 WO2022088592A1 PCT/CN2021/082161 CN2021082161W WO2022088592A1 WO 2022088592 A1 WO2022088592 A1 WO 2022088592A1 CN 2021082161 W CN2021082161 W CN 2021082161W WO 2022088592 A1 WO2022088592 A1 WO 2022088592A1
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- 230000001052 transient effect Effects 0.000 claims abstract description 122
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Definitions
- the present application relates to the field of LED technology, and in particular, to an LED chip assembly, a display panel and a preparation method.
- LED Light-Emitting Diode
- Traditional light sources such as fluorescent lamps or incandescent lamps.
- LEDs have the advantages of low power consumption, long life and fast response time.
- LEDs are compact, shockproof, and environmentally friendly, so LEDs are widely used in the market.
- LEDs can be used in display devices, indoor or outdoor lighting, data storage devices, communication devices, medical devices, and the like.
- LEDs can be used as a backlight source of a display device, or as a pixel unit of a display device after being reduced in size (micron level). And mass transfer technology has become the key to making small-sized LEDs as pixel units.
- alignment marks For mass transfer of LED chips, especially when excimer laser mass transfer is used, alignment marks (Mark) need to be set on the transient substrate (Donor) and the driving substrate, and the alignment marks are used to achieve transient
- the alignment of the LED chips on the substrate and the chip setting area on the driving substrate enables the multiple LED chips on the transient substrate to be transferred to the driving substrate together.
- the purpose of the present application is to provide an LED chip assembly, a display panel and a manufacturing method thereof, aiming at solving the problem of arranging alignment marks on a transient substrate.
- An LED chip assembly comprising:
- the marking base and the LED chips are located on the same surface of the substrate, and the marking base and the LED chips are formed on the same growth substrate; the marking base is configured to play a positioning role in the process of transferring multiple LED chips.
- the present application also provides a method for preparing an LED chip assembly, including:
- the LED chip and the marking base are transferred from the growth substrate to the transient substrate to obtain an LED chip assembly; the marking base is configured to play a positioning role in the process of transferring the LED chip from the transient substrate to the driving substrate.
- a display panel which includes:
- At least two marking bases, the marking bases and a part of the plurality of LED chips are grown on the same growth substrate, and transferred to the driving substrate through the same transient substrate; the marking bases are configured to move from the transient substrate to the driving substrate
- the substrate plays a positioning role in the process of transferring the LED chip.
- the present application also provides a method for manufacturing a display panel, including:
- a driving substrate is provided; wherein, at least two second alignment marks are formed on the driving substrate;
- the alignment of the driving substrate and the LED chip assembly is realized through the second alignment mark and the mark base;
- the LED chip is bonded to the driving substrate and peeled off from the substrate of the LED chip assembly.
- the present application also provides a display panel, which is prepared by using any one of the aforementioned methods for preparing a display panel.
- the above-mentioned LED chip assembly includes a substrate, a plurality of LED chips on the substrate, and at least two marking bases, the marking bases and the LED chips are formed on the same growth substrate, and can be transferred to the transient state together with the LED chips. On the substrate, it is used for positioning during the transfer process of the LED chip.
- the LED chip assembly provides a new solution for setting alignment marks on the transient substrate. In this solution, the transfer process of the LED chip and the marking base can be performed together. Realization, avoids the problem of needing to transfer the marking base and the LED chip to the transient substrate separately after setting the marking base on the substrate other than the growth substrate, improves the setting efficiency of the alignment mark on the transient substrate, and is beneficial to improving Mass transfer efficiency.
- the LED chip is prepared on the growth substrate and the marking base member is formed, and then the LED chip and the marking base member are transferred from the growth substrate to the transient substrate together. Since the marking base can be formed on the growth substrate and transferred to the transient substrate along with the LED chips, it is used for positioning in the process of transferring the LED chips from the transient substrate to the driving substrate.
- the manufacturing method of the LED chip assembly provides a new solution for arranging alignment marks on the transient substrate. In this solution, the transfer process of the LED chip and the marking base member can be realized together, avoiding the need to set the alignment mark on the substrate other than the growth substrate. After marking the base part, it is necessary to transfer the marking base part and the LED chip to the transient substrate respectively, which improves the setting efficiency of the alignment marks on the transient substrate, which is beneficial to improve the mass transfer efficiency.
- the above-mentioned display panel includes a driving substrate and at least two marking base members, wherein the marking base member and some LED chips on the driving substrate are grown on the same growth substrate, and can be transferred from the same transient substrate.
- a new solution for arranging alignment marks on the transient substrate in which the transfer process of the LED chip and the marking base can be realized together, avoiding the need to set the marking base on a substrate other than the growth substrate After the parts are removed, it is necessary to transfer the marking base part and the LED chip to the transient substrate respectively, which improves the setting efficiency of the alignment marks on the transient substrate, and is beneficial to improve the mass transfer efficiency.
- a driving substrate is provided first, and then a corresponding LED chip assembly is formed according to the positional relationship of the second alignment mark on the driving substrate.
- the LED chip assembly includes a first alignment mark, and a first pair of alignment marks.
- Position marks are formed by mark bases grown on the same growth substrate as the LED chips. These mark bases can be transferred to the transient substrate along with the LED chips to form the first alignment marks on the transient substrate, avoiding the need for After setting the first alignment mark (or mark base) on other substrates, it is necessary to transfer the alignment mark (or mark base) and LED chips to the transient substrate respectively, which improves the first alignment mark on the transient substrate.
- the setting efficiency of the mark is beneficial to improve the mass transfer efficiency and the preparation efficiency of the display panel, and improve the production efficiency.
- a driving substrate is provided first, and then a corresponding LED chip assembly is formed according to the positional relationship of the second alignment mark on the driving substrate.
- the LED chip assembly includes a first alignment mark, and a first alignment mark.
- the alignment marks are formed by the base marks grown on the same growth substrate as the LED chips. These base marks can be transferred to the transient substrate together with the LED chips to form the first alignment marks on the transient substrate to avoid After setting the first alignment mark (or mark base) on other substrates, it is necessary to transfer the alignment mark (or mark base) and LED chips to the transient substrate respectively, which improves the first pair on the transient substrate.
- the setting efficiency of the bit mark is beneficial to improve the mass transfer efficiency and the preparation efficiency of the display panel, and improve the production efficiency.
- FIG. 1 is a schematic diagram of an LED chip assembly including a growth substrate provided in an optional embodiment of the present application;
- FIG. 2 is an optional structural schematic diagram of an LED chip and a marking base member provided in an optional embodiment of the present application;
- FIG. 3 is a schematic diagram of an LED chip assembly including a transient substrate provided in an optional embodiment of the present application;
- FIG. 4 is another schematic diagram of an LED chip assembly including a growth substrate provided in an optional embodiment of the present application.
- FIG. 5 is a flow chart of preparing an LED chip assembly including a transient substrate provided in an optional embodiment of the present application
- FIG. 6 is a flowchart of preparing a display panel provided in an optional embodiment of the present application.
- FIG. 7 is a schematic diagram of a display panel provided in an optional embodiment of the present application.
- FIG. 8 is another schematic diagram of a display panel provided in an optional embodiment of the present application.
- FIG. 9 is a flowchart of preparing a display panel provided in another optional embodiment of the present application.
- FIG. 10 is a schematic diagram of a process state change of the display panel in FIG. 9;
- FIG. 11 is an optional structural schematic diagram of an LED chip and a marking base member provided in another optional embodiment of the present application.
- 10-LED chip assembly 11-growth substrate; 12-multiple LED chips; 13-marking base member; 121-chip sacrificial layer; 122-chip first semiconductor layer; 123-chip active layer; 124-chip second 125-chip current spreading layer; 126-chip metal layer; 131-marking sacrificial layer; 132-marking first semiconductor layer; 133-marking active layer; 134-marking second semiconductor layer; 135-marking current spreading layer; 30-LED chip assembly; 31-transient substrate; 12-multiple LED chips; 33-first alignment mark; 70-display panel; 71-drive substrate; 72-multiple LED chips; 73-first 74-second alignment mark; 101-growth substrate; 102-LED chip; 103-mark base; 104-temporary substrate; 105-transient substrate; 106-first alignment mark; 107-first Two alignment marks; 108-drive substrate.
- LED chips including but not limited to Micro Light Emitting Diodes (Micro Light Emitting Diode) Light-Emitting Diode, Micro-LED), Mini Light-Emitting Diode (Mini-LED), or Organic Light-Emitting Diode (Organic Light Emitting Diode). Light-Emitting Diode, OLED), etc.), it is necessary to set alignment marks on the transient substrate and the driving substrate, so as to realize the alignment of the LED chip on the transient substrate and the LED chip setting area on the driving substrate to ensure The LED chips can be accurately arranged on the driving substrate, but there is currently no solution generally recognized in the industry to arrange alignment marks on the transient substrate.
- This embodiment first provides an LED chip assembly, which includes a substrate, a plurality of LED chips located on the surface of the substrate, and at least two marking base members.
- the marking base member and the LED chip are located on the same surface of the substrate, and the marking base member and the LED chip are formed on the same growth substrate.
- the marking base is used for positioning in the process of transferring multiple LED chips.
- the substrate in the LED chip assembly may be a growth substrate or a transient substrate.
- This embodiment involves "growth substrates", “transient substrates” and “driving substrates”, and these types of substrates are distinguished according to their functions relative to the LED chips.
- the growth substrate is the substrate on which the LED chips are grown and prepared;
- the transient substrate is the substrate that transfers the LED chips from the growth substrate, and then transfers the transferred LED chips to other substrates to temporarily carry the transferred LED chips;
- the driving substrate is the substrate that actually applies the LED chip, and is the chip receiver of the LED chip.
- the names of "growth substrate”, “transient substrate” and “driving substrate” may also be replaced by other names, for example, “first substrate”, “first substrate”, “ “Second substrate” and “third substrate” replace “growth substrate”, “transient substrate”, and “driving substrate”.
- a "temporary substrate” or a “transfer substrate” may be used instead of a "transient substrate”.
- the LED chip assembly 10 includes a growth substrate 11 , a plurality of LED chips 12 and at least two marking base members 13 .
- the marking base 13 is used to form at least two first alignment marks on the transient substrate after being transferred onto the transient substrate.
- the first alignment mark is used to cooperate with the second alignment mark on the driving substrate to realize the alignment of the transient substrate and the driving substrate, thereby ensuring that the LED chips on the transient substrate are aligned with the chip setting area on the driving substrate.
- the LED chip 12 and the marking base member 13 are located on the same surface of the growth substrate 11 , and both are grown from the surface of the growth substrate 11 .
- At least part of the material of the marking base 13 is the same as at least part of the material of the LED chip 12 . That is, assuming that the material set of the materials forming the marking base 13 is the first set S1, and the material set of the materials forming the LED chips 12 is the second set S2, then there is an intersection between the first set S1 and the second set S2.
- the first set S1 may be a subset of the second set S2, that is, the second set S2 includes the first set S1.
- the first set S1 is a subset of the second set S2, which includes the case where the first set S1 is a proper subset of the second set S2, at this time, the marking base 13 can be formed by forming the part of the LED chip 12. The material is formed; at the same time, it also includes the case where the first set S1 and the second set S2 are equal, at this time, the marking base 13 can be formed of all the materials that form the LED chip 12 .
- the marking base 13 is a composite layer structure including a plurality of layer structures, and consecutive n layer structures in the marking base 13 may constitute the first partial layer, while n consecutive layers in the LED chip 12
- the structure may constitute the second partial layer, where n is greater than or equal to 2.
- the formation material of the first partial layer is the same as that of the second partial layer, and the relative position of the layer structure of the same formation material in the first partial layer is the same as that in the second partial layer.
- the marking base member 13 includes three adjacent layer structures formed of materials b1, b2, and b3, and the layers b1, b2, and b3 are sequentially arranged from bottom to top.
- the LED chip 12 also includes the b1 layer, the b2 layer, and the b3 layer, and the lower surface and the upper surface of the b2 layer are respectively attached to the b1 layer and the b3 layer. It can be seen that the b1 layer, b2 layer and b3 layer in the marking base 13 can constitute the first partial layer, and the b1 layer, b2 layer and b3 layer in the LED chip 12 can constitute the second partial layer.
- the marking base member 13 includes, from bottom to top, a marker sacrificial layer 131 , a marker first semiconductor layer 132 , a marker active layer 133 , a marker second semiconductor layer 134 and a marker current spreading layer.
- the LED chip 12 sequentially includes a chip sacrificial layer 121, a chip first semiconductor layer 122, a chip active layer 123, a chip second semiconductor layer 124 and a chip current spreading layer 125 from bottom to top. It also includes a chip metal layer 126 respectively connected to the chip current spreading layer 125 and the chip first semiconductor layer 122 .
- the marker base 13 does not include a metal layer, but in some other examples, the marker base 13 may also include a metal layer.
- the marking base member 13 may not yet form the first alignment mark on the growth substrate 11 , especially when the first alignment mark needs to be formed by splicing two or more marking base members. Therefore, in some examples, the relative positional relationship between the marking base 13 and the LED chips 12 on the growth substrate 11 may be different from the relative positional relationship after being transferred to the transient substrate. In this embodiment, the specific position of the marking base member 13 on the growth substrate 13 is not even limited, and in the case of selecting a dead-dot LED chip as the marking base member 13, because the appearance position of the dead-dot LED chip is random , so the position of the marking base 13 cannot be specified.
- the position of the marking base 13 on the growth substrate 11 can be controlled.
- the marking base 13 is specially formed on the growth substrate, in order to avoid affecting the growth of the LED chip 12, the chip can be placed on the growth substrate 11.
- the free area outside the growth area forms the marking base.
- the marking base 13 is located just outside the growth substrate 11 because the central area of the growth substrate 11 is the chip growth area.
- the shape of the marking base 13 is not limited.
- the marking base 13 is a cuboid or a cube, that is, the cross section of the marking base 13 is a rectangle.
- the marker base 13 is cylindrical and its cross section is circular.
- the cross section of the marking base 13 may be triangular, and the whole is in the shape of a triangular prism.
- the cross-section of the marking base 13 may be polygonal (such as hexagon, regular octagon, etc.), or the cross-section of the marking base 13 may be irregular or the like.
- the structure of the marking base 13 is relatively similar to the LED chip 12 , but the marking base 13 is slightly different from the LED chip 12 .
- the marking base 13 may include LED chips grown from the growth substrate 11 .
- at least two LED chips can be arbitrarily designated as the LED chips.
- Mark the base piece, or at least two LED chips can be selected from the plurality of LED chips as the mark base piece according to a certain principle.
- one marking base member may be one LED chip, and in other examples of this embodiment, one marking base member may also include two or more LED chips.
- the LED chips included in the marking base 13 may be LED chips with dead pixels. After the growth of the LED chips on the growth substrate 11 is completed, the LED chips are usually detected, thereby Identify LED chips with substandard quality or faulty LED chips, these LED chips are LED chips with dead pixels. In the case of using the dead-dot LED chips, the dead-dot LED chips that have no use value can be utilized, thereby improving the utilization rate of the LED chips grown on the growth substrate 11 .
- LED chips at certain positions on the growth substrate 11 can be designated as the marking base member 13 regardless of whether they are good or bad.
- the chip growth area on the growth substrate 11 is rectangular, it can be designated at The four LED chips at the vertices of the rectangle are used as the marking base 13 .
- the LED chips used as the marking base 13 may be LED chips of good quality, and the LED chips with dead pixels are still not used.
- the solution of 13 can also reduce the time cost and process cost of forming the marking base 13. After all, the LED chips are produced in batches on the growth substrate 11, so the formation of the marking base 13 does not require the preparation of additional materials or the use of additional manufacturing processes. .
- the LED chip assembly 30 includes a transient substrate 31 , a plurality of LED chips 12 and at least two first alignment marks 33 , the relative positional relationship between the first alignment mark 33 and the LED chip 12 is the same as the relative positional relationship between the second alignment mark and the chip setting area on the drive substrate. Therefore, as long as each first alignment mark 33 and the corresponding When the two alignment marks are aligned, the LED chip 12 can be aligned with the chip setting area on the driving substrate.
- the first aligning mark 33 includes a marking base.
- one first aligning mark 33 is composed of only one marking base, but in other examples of this embodiment, the first The pair of positioning marks 33 can also be formed by splicing two or more mark base pieces.
- only two first alignment marks 33 may be provided on the transient substrate 31.
- the plurality of LED chips 12 on the transient substrate 31 are arranged in a rectangle, then these two The first alignment mark 32 can be arranged outside the same side of the rectangle, or the two first alignment marks 33 can be respectively arranged near the diagonal vertex of the rectangle, and the two are on the extension line of the diagonal of the rectangle, please refer to shown in Figure 4.
- first alignment marks 33 may be provided on the transient substrate 31, and the four first alignment marks 33 are respectively located at the vertices of the rectangle formed by the arrangement of the LED chips.
- the connection lines between the four first alignment marks can also form a rectangle, but the area of the rectangle is slightly larger than that of the rectangle formed by the LED chips 12 .
- the number of the first alignment marks 33 in the LED chip assembly 30 may also be other values, for example, may be 3, 5 or even more.
- the marker base on the transient substrate 31 in this embodiment is transferred from the growth substrate of the LED chip 12 , that is, the marker base and the LED chip 12 come from the same growth substrate.
- the LED chips 12 on the transient substrate 31 may be part of the LED chips 12 on the growth substrate 11 ; the mark base on which the first alignment marks 33 are formed on the transient substrate 31 may be the growth substrate 11 Marking base piece 31 on. Therefore, for the structure of the marking base member on the transient substrate 31, reference may be made to the above description of the marking base member 13 on the growth substrate 11.
- the marking base member includes multiple layer structures, and n consecutive layer structures in the multiple layer structures constitute a first partial layer, and consecutive n layer structures in the LED chip 12 constitute a second partial layer, and n is greater than or equal to 2 ;
- the formation material of the first partial layer is the same as that of the second partial layer, and the relative position of the layer structure of the same forming material in the first partial layer is the same as that in the second partial layer;
- the marking base LED chips can be included in the marking parts, and the LED chips used as the basic marking parts can be LED chips of up to standard quality or LED chips with dead pixels. The specific structure of the basic marking parts and the advantages of various structures will not be repeated here. .
- the first alignment mark 33 includes a three-dimensional pattern formed by splicing at least two mark base pieces. It can be understood that, when the first alignment mark 33 is composed of LED chips, in order to be able to visually distinguish the LED chip as the mark base member from the LED chip as the transferred target device, the LED chip as the mark base member is used. Splicing into some special patterns, for example, multiple LED chips are arranged side by side into a rectangular pattern, multiple LED chips are spliced into a "cross" pattern, or multiple LED chips are spliced into a pattern similar to flowers, etc., so that it can be clearly seen. The LED chips in the first alignment mark 33 are distinguished from other LED chips.
- the shapes of the first alignment marks 33 may or may not be exactly the same. In some examples of this embodiment, each of the first alignment marks may even have different shapes.
- This embodiment also provides a method for manufacturing an LED chip assembly. Please refer to the flowchart of the method for manufacturing an LED chip assembly shown in FIG. 5 :
- S502 Prepare an LED chip on a growth substrate, and form a marking base.
- the epitaxial layer of the LED chip needs to be grown: including the N-type semiconductor layer, the active layer and the P-type semiconductor layer, etc.
- the buffer layer, the current spreading layer and other layer structures need to be grown .
- the grown layer structure can be etched to expose the electrode setting area, and then an N electrode and a P electrode are arranged in the electrode setting area, wherein the N electrode is electrically connected to the N-type semiconductor layer, and the P electrode is electrically connected to the P-type semiconductor layer. .
- the fact that the electrode is electrically connected to the corresponding semiconductor layer does not mean that the electrode must be in contact with the corresponding semiconductor layer.
- the P electrode can be set in the current
- the extension layer ITO (indium tin oxide) layer is electrically connected to the P-type semiconductor layer through the ITO layer. The specific process of preparing the LED chip will not be repeated here.
- the marking base is directly composed of LED chips on the growth substrate.
- the marking base is a dead-dot LED chip on the growth substrate, then the marking is formed.
- the basic parts can be realized by referring to the following method: after the preparation of the LED chips is completed, each LED chip on the growth substrate is tested to identify the LED chips with dead pixels, and then the LED chips with dead pixels are used as the basic parts for marking.
- the marking base may not be limited to the LED chips with dead pixels. In this case, after the LED chips are prepared, they can be selected from many LED chips on the growth substrate based on the random principle, etc. Select the mark base part from .
- the marking base is prepared by a different process from that of the LED chip. Therefore, in this case, the structure of the marking base is not completely consistent with the structure of the LED chip, but , the marking base and the LED chip can have the same material as part of the material.
- the formation materials of the two partial layers are the same, and the relative position of the layer structure of the same forming material in the first partial layer is the same as that in the second partial layer. In this case, the layer of a certain material in the first partial layer is formed.
- the process of forming the structure can be performed simultaneously with the process of forming the layer structure of the same material in the second partial layer.
- the marking base includes an N-type semiconductor layer, an active layer attached to the upper surface of the N-type semiconductor layer, and a P-type semiconductor layer attached to the upper surface of the active layer
- the three layer structures in the marking base are formed
- the process of forming the epitaxial layer in the LED chip can be carried out at the same time: forming the N-type semiconductor layer in the LED chip while forming the N-type semiconductor layer in the marking base, forming the active layer in the LED chip and forming the marking base at the same time.
- the active layer of the LED chip is formed while the P-type semiconductor layer in the marking base is formed.
- S504 Transfer the LED chip and the marking base member from the growth substrate to the transient substrate to obtain an LED chip assembly.
- the LED chips and the marking base member can be transferred to the transient substrate to form an LED chip assembly including the transient substrate.
- the marking base forms the first alignment mark when it is transferred to the transient substrate.
- the relative positional relationship between the first alignment mark and the LED chip on the transient substrate is the same as the relative positional relationship between the second alignment mark on the driving substrate and the chip setting area.
- the LED chip and the marking base are transferred to the transient substrate, it needs to be transferred based on the arrangement of the second alignment mark and the chip setting area on the driving substrate. In some cases, the LED chip is transferred from the self-growing substrate to the driving substrate.
- the process it needs to go through the transfer of two transient substrates, of which the first transient substrate can directly transfer all the LED chips on the growth substrate to one of its own surfaces, while the second transient substrate will transfer all the LED chips on the growth substrate to its own surface.
- the LED chips on a transient substrate are selectively transferred, so that the pitch and position of the transferred LED chips meet the requirements of the driving substrate. Therefore, in this embodiment, the transient substrate carrying the LED chips and the first alignment marks that meet the requirements of the driving substrate is actually the second transient substrate, and the LED chips and the marking base are transferred to the transient substrate. Before the substrate, it may also need to undergo the transfer of another transient substrate.
- the first transient substrate is called the temporary substrate.
- the temporary substrate It may also be called an intermediate substrate, a transfer substrate.
- the LED chips can be directly transferred from the growth substrate to the transient substrate without going through the transfer of the temporary substrate.
- the LED chips can be directly transferred by the transfer head according to the required arrangement. onto the transient substrate, and at the same time, the marking base is also transferred to the designated position of the transient substrate, thereby forming a first alignment mark.
- This embodiment also provides a method for manufacturing a display panel, please refer to the flowchart shown in FIG. 6 :
- the provided driving substrate includes a plurality of chip setting areas and at least two second alignment marks.
- the formed LED chip assembly includes a substrate, a plurality of LED chips on the substrate, and at least two marking base components.
- the LED chip assembly formed here is an LED chip assembly including a transient substrate, and the LED chip assembly can be Made according to the process shown in Figure 5.
- the LED chip assembly can be made according to the process shown in Figure 5.
- the driving substrate can be provided first, and then the LED chip assembly can be formed according to the positional relationship of the second alignment marks on the driving substrate.
- the numbers of the first alignment marks and the second alignment marks may be consistent or inconsistent.
- the numbers of the two are exactly the same, and each of the first alignment marks is on the driving substrate.
- There is a corresponding second alignment mark and the first alignment mark and the second alignment mark exist in pairs.
- the shapes of the first alignment mark and the second alignment mark constituting one mark pair are also the same.
- the number of first and second alignment marks is different, but regardless of the number, there must be at least two pairs of marks.
- the LED chip assembly Before transferring the LED chips in the LED chip assembly to the corresponding chip setting area, it is necessary to use the marking base in the LED chip assembly and the second alignment mark on the driving substrate to realize the alignment between the LED chip assembly and the driving substrate: for example , the LED chip assembly includes a transient substrate and a first alignment mark formed on the transient substrate, then align the first alignment mark with the corresponding second alignment mark.
- This process can be performed on a CCD (charge coupled device) ) is automated with the assistance of a camera.
- CCD charge coupled device
- the LED chip can be transferred from the transient substrate to the corresponding chip arrangement area on the driving substrate.
- the driving substrate it is necessary to realize the combination of the LED chip and the driving substrate, and on the other hand, to realize the separation of the LED chip and the substrate in the LED chip assembly.
- the LED chip electrodes and the solder joints in the chip setting area can be bonded, and after the LED chip is bonded with the chip setting area, the LED chip and the transient substrate can be separated.
- the bonding surface of the LED chip and the transient substrate may be irradiated with laser light or infrared rays, and then the transient substrate may be released.
- the first alignment marks are not transferred, but in other examples of this embodiment, the first alignment marks are not transferred.
- the marks will also be transferred to the driving substrate along with the LED chips.
- the first alignment mark can also be aligned with the driving substrate.
- the driving substrate is bonded, and then the first alignment mark and the transient substrate are separated, so that the first alignment mark is transferred to the driving substrate.
- the resulting display panel is shown in Figure 7:
- the display panel 70 includes a driving substrate 71 , a plurality of LED chips 72 , at least two first alignment marks 73 and at least two second alignment marks 74 .
- the plurality of LED chips 72 are respectively disposed in each chip disposing area on the driving substrate 71 , and are electrically connected with the driving circuit in the driving substrate 71 . It can be understood that all the LED chips on the driving substrate 71 usually do not come from the same growth substrate, so the first alignment mark 73 usually does not come from the same growth substrate as all the LED chips on the driving substrate 71, but the first pair Bit marks 73 are from the same growth substrate as part of the LED chips.
- the second alignment mark 74 and the LED chip placement area are located on the same surface of the driving substrate.
- the first alignment mark 73 and the second alignment mark 74 at least partially overlap, for example, in some examples of this embodiment , the line connecting the centers of the two is perpendicular to the surface of the driving substrate, that is, the centers of the two coincide in the direction parallel to the surface of the driving substrate (those skilled in the art can understand that the centers of the two may There is a certain error due to the influence).
- the second alignment mark 74 is a plane pattern, but in other examples of this embodiment, the second alignment mark 74 may also be a three-dimensional structure.
- the second alignment mark 74 is in the shape of a hollow tube, and its cross-section can be rectangular or circular.
- the second alignment mark 74 may also be a solid three-dimensional structure, such as a rectangular parallelepiped, a cylinder, and the like.
- the cross section of the first alignment mark 73 is a rectangle, but in other examples of this embodiment, it may also be a circle, a "cross" shape, a "T" shape, or a triangle.
- the cross-sectional shapes of the first alignment marks 73 may not be exactly the same.
- the outline of the cross-section of the second alignment mark 74 can also be correspondingly circular, "cross", “T”, triangle, etc., as shown in FIG. 8 , or not follow the cross-sectional shape of the first alignment mark It changes with the change, and it is always a more regular shape such as a circle and a rectangle.
- the cross-sectional specification of the second alignment mark 74 may be exactly the same as the cross-sectional specification of the first alignment mark 73, but in other examples, the second alignment mark
- the alignment mark may be of a different shape or size than the first alignment mark: in one example, the first alignment mark 73 is square in cross section, and the second alignment mark 74 is also square in cross section, but the The side length of the two alignment marks is slightly larger than that of the first alignment mark; in an example, the cross section of the first alignment mark 73 is circular, and the cross section of the second alignment mark 74 is square, optionally , the sides of the square are slightly longer than the diameter of the circle.
- the first alignment mark 73 will be located at the second alignment mark 74 Middle.
- the LED chip assembly, the display panel, and the method for fabricating the display panel provided in this embodiment provide a new idea for setting the first alignment mark on the transient substrate: by forming a basic marker on the growth substrate, and then placing the first alignment mark on the growth substrate The LED chip is transferred to the transient substrate together with the marking base, so that the marking base forms the first alignment mark.
- the material of the marking base and its forming process on the growth substrate can also partially overlap with the material and the forming process of the LED chip, so that the two can be generated at the same time, reducing the forming cost of the marking base and improving the setting on the transient substrate.
- the efficiency of the first alignment mark improves production efficiency.
- S902 Prepare LED chips on the growth substrate, and form a marking base.
- the growth substrate 101 may be a sapphire wafer.
- the structure of the marking base member 103 is different from that of the LED chip 102, so the marking base member 103 needs to be formed separately.
- 11 shows a schematic cross-sectional view of the marking base member 103 and the LED chip 102 : the marking base member 103 sequentially includes a weakened structure layer, an epitaxial layer (from bottom to top, the first semiconductor layer, the active layer and the The second semiconductor layer), the ITO layer and the silicon oxide layer, at the same time, the marking base member 103 also includes a metal layer disposed on the ITO layer after etching the silicon oxide layer; the LED chip 102 sequentially includes a weakened structure layer, an epitaxial layer from bottom to top (from bottom to top, the first semiconductor layer, the active layer, and the second semiconductor layer), the ITO layer, and the silicon oxide layer.
- the LED chip 102 further includes a second electrode disposed on the ITO layer after etching the silicon oxide layer. and a first electrode disposed on the first semiconductor layer after etching the silicon oxide layer, the ITO layer, the second semiconductor layer and the active layer in sequence. It can be seen with reference to FIG. 11 that, compared with the formation process of the LED chip 102 , the process of forming the marking base member 103 is less than the process of setting the first electrode. Therefore, compared with the LED chip 102, the marking base 103 has less area to be etched, and also has one less metal layer.
- the marking base member 103 may also have a layer structure that the LED chip 102 does not have, or the marking base member 103 has the same layer structure as the LED chip 102 , but the layer structure is different from the layer structure. The location relationship is different.
- the LED chip assembly including the growth substrate, the LED chip and the marking base member has been formed, please refer to (a) of FIG. 10 .
- S904 Transfer the LED chip and the marking base from the growth substrate to the temporary substrate.
- the LED chips 102 and the marking base 103 can be transferred to the temporary substrate 104 together.
- the surface of the temporary substrate 104 with the adhesive layer is used to approach the growth substrate 101 until the LED chip 102 and the marking base 103 are adhered to the temporary substrate 104, and then the growth substrate 101 is removed by laser lift-off, as shown in the figure. 10(b).
- the LED chips 102 and the marking base 103 on the growth substrate 101 are both transferred to the temporary substrate 104 .
- S906 Provide a driving substrate and a second alignment mark disposed on the driving substrate.
- the second alignment mark 107 is a three-dimensional structure, and the cross-sectional shape of the second alignment mark 107 is a rectangle, which is the same as the cross-sectional shape of the first alignment mark 106 , but the second alignment mark 107
- the size of the cross section is larger than the size of the cross section of the first alignment mark 106 , as shown in FIG. 10( c ).
- the driving substrate 108 and the second alignment marks 107 disposed on the driving substrate 108 can be prepared before the LED chip assembly including the transient substrate is formed.
- the transient substrate includes The LED chip assembly is formed according to the positional relationship of the second alignment mark on the driving substrate, so the driving substrate should be provided first, and then the LED chip assembly should be formed.
- the positional relationship between the second alignment marks (or the first alignment marks) can also be determined in advance, and then the LED chip assembly and the driving substrate can be prepared according to the determined positional relationship.
- the LED chip assembly It can be formed before the driving substrate, or the two preparation processes can be performed simultaneously.
- S908 Selectively transfer the LED chip to the transient substrate according to the positional relationship between the chip setting area and the second alignment mark on the driving substrate, and transfer the marking base to the transient substrate to form the first alignment mark.
- a first alignment mark 106 is composed of only one marking base 103, and the transient substrate Four first alignment marks 106 need to be set on 105 , therefore, the transient substrate 105 can only be transferred from the temporary substrate 104 to four marking bases 105 , and even only four marking bases 103 can be grown on the growth substrate 101 .
- the LED chip assembly including the transient substrate, the LED chip and the first alignment mark has been formed, As shown in Fig. 10(d).
- the first alignment mark 106 is aligned with the corresponding second alignment mark 107 , thereby realizing alignment of the transient substrate 105 and the driving substrate 108 , as shown in FIG. 10( e ).
- both the LED chips 102 and the first alignment marks 106 are transferred to the driving substrate 108 . Therefore, the LED chips 102 and the corresponding chip setting areas are aligned, and the first alignment marks 106 and the second alignment marks are aligned. After marking 107 , the LED chip 102 and the first alignment mark 106 can be bonded to the driving substrate 108 to realize the electrical connection between the LED chip 102 and the driving circuit in the driving substrate 108 . After the first alignment mark 106 is bonded to the driving substrate 108, its center will coincide with the center of the second alignment mark 107, as shown in FIG. 10(f).
- the first alignment marks 106 may not be transferred to the driving substrate 108 , so in these examples, it is not necessary to bond the first alignment marks 106 and the driving substrate 108 .
- the bonding between the LED chip 102 and the transient substrate 105 can be contacted by laser or infrared rays, and the first alignment mark 106 and the transient substrate 105 The combination between them realizes the peeling of the transient substrate 105, see FIG. 10(g).
- the display panel 10 is basically formed.
- a protective layer for protecting the LED chips on the driving substrate 108 may be further provided.
- a marking base member in the process of preparing the display panel, in order to realize the transfer of the LED chip from the transient substrate to the driving substrate, a marking base member can be formed on the growth substrate during the growth process of the LED chip at the same time.
- the marking base is also transferred to form a first alignment mark corresponding to the second alignment mark on the driving substrate, and then the first alignment mark is used to match the second alignment mark with the second alignment mark.
- the alignment of the mark realizes the alignment of the LED chip and the chip setting area in the driving substrate, and improves the quality of the display panel.
- the marking base of the first alignment mark on the transient substrate and the LED chip on the transient substrate can be from the same growth substrate, the marking base can be transferred to the transient state together with the LED chip.
- the first alignment mark on the transient substrate is formed, which avoids the problem that the first alignment mark and the LED chip need to be transferred to the transient substrate respectively after setting the first alignment mark on other substrates, which improves the temporary
- the setting efficiency of the first alignment mark on the state substrate is beneficial to improve the mass transfer efficiency and the preparation efficiency of the display panel, and improve the production efficiency.
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Abstract
L'invention concerne un ensemble de puces DEL (10), et un panneau d'affichage (70) et un procédé de préparation, l'ensemble de puces DEL (10) comprenant un donneur, de multiples puces DEL (12) situées sur le donneur, et au moins deux parties de base de marque (13), les parties de base de marque (13) et les puces DEL (12) étant formées sur le même donneur de croissance (11), et les parties de base de marque (13) pouvant être transférées à un donneur transitoire (31) conjointement avec les puces DEL (12) pour remplir une fonction de positionnement pendant le transfert des puces DEL (12).
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CN202011170615.0 | 2020-10-28 |
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EP4150409A4 (fr) * | 2020-05-11 | 2024-09-18 | Semileds Corp | Procédé et système de transfert de repères d'alignement entre des systèmes de substrat |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374726A (zh) * | 2015-10-22 | 2016-03-02 | 北京同方微电子有限公司 | 一种封装拾取芯片的定位方法 |
CN109326549A (zh) * | 2018-09-19 | 2019-02-12 | 京东方科技集团股份有限公司 | 一种微发光二极管的转移方法、显示面板及其制备方法 |
US20190157501A1 (en) * | 2017-11-20 | 2019-05-23 | Lg Display Co., Ltd. | Display device and method of manufacturing the same |
CN110310907A (zh) * | 2019-07-02 | 2019-10-08 | 南方科技大学 | 一种Micro-LED芯片转移方法及显示装置 |
CN111627952A (zh) * | 2020-06-19 | 2020-09-04 | 武汉华星光电技术有限公司 | 显示面板及其制备方法、显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010251360A (ja) * | 2009-04-10 | 2010-11-04 | Sony Corp | 表示装置の製造方法および表示装置 |
EP2731126A1 (fr) * | 2012-11-09 | 2014-05-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Procédé de liaison de matrices de puce nue |
CN104701144A (zh) * | 2015-03-27 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种基板及其制作方法、显示面板的制作方法 |
CN105093636B (zh) * | 2015-09-21 | 2018-11-13 | 京东方科技集团股份有限公司 | 触控显示基板及其制备方法和触控显示面板 |
WO2018061896A1 (fr) * | 2016-09-29 | 2018-04-05 | 東レエンジニアリング株式会社 | Procédé de transfert, procédé de montage, dispositif de transfert et dispositif de montage |
JP2018060993A (ja) * | 2016-09-29 | 2018-04-12 | 東レエンジニアリング株式会社 | 転写方法、実装方法、転写装置、及び実装装置 |
CN109856930B (zh) * | 2017-11-30 | 2021-05-25 | 京东方科技集团股份有限公司 | 对准标记、基板及其制作方法、曝光对准方法 |
WO2019246366A1 (fr) * | 2018-06-22 | 2019-12-26 | Veeco Instruments Inc. | Procédés de transfert de micro-del au moyen d'un décollement à base de lumière |
CN109713087B (zh) * | 2018-09-27 | 2020-10-23 | 华为机器有限公司 | 芯片维修方法及设备 |
CN109661122B (zh) * | 2018-11-09 | 2020-01-21 | 华中科技大学 | 一种适用于微型发光二极管的选择性巨量转移方法 |
CN111199951B (zh) * | 2018-11-20 | 2021-12-03 | 中芯集成电路(宁波)有限公司 | 半导体器件及其制作方法、对位标记的制作方法 |
CN109599354A (zh) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | 一种Micro-LED巨量转移的结构及方法 |
TW202036838A (zh) * | 2018-12-13 | 2020-10-01 | 美商蘋果公司 | 發光二極體(led)巨量轉移裝置及製造方法 |
CN110838503A (zh) * | 2019-11-20 | 2020-02-25 | 广东省半导体产业技术研究院 | 微型led芯片制作方法、微型led显示器件制作方法和微型led显示器件 |
CN111081608B (zh) * | 2019-12-25 | 2022-04-12 | 上海天马微电子有限公司 | 芯片转移方法、芯片及显示面板 |
-
2020
- 2020-10-28 CN CN202011170615.0A patent/CN113451274B/zh active Active
-
2021
- 2021-03-22 WO PCT/CN2021/082161 patent/WO2022088592A1/fr active Application Filing
- 2021-10-27 TW TW110139753A patent/TWI802062B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374726A (zh) * | 2015-10-22 | 2016-03-02 | 北京同方微电子有限公司 | 一种封装拾取芯片的定位方法 |
US20190157501A1 (en) * | 2017-11-20 | 2019-05-23 | Lg Display Co., Ltd. | Display device and method of manufacturing the same |
CN109326549A (zh) * | 2018-09-19 | 2019-02-12 | 京东方科技集团股份有限公司 | 一种微发光二极管的转移方法、显示面板及其制备方法 |
CN110310907A (zh) * | 2019-07-02 | 2019-10-08 | 南方科技大学 | 一种Micro-LED芯片转移方法及显示装置 |
CN111627952A (zh) * | 2020-06-19 | 2020-09-04 | 武汉华星光电技术有限公司 | 显示面板及其制备方法、显示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4150409A4 (fr) * | 2020-05-11 | 2024-09-18 | Semileds Corp | Procédé et système de transfert de repères d'alignement entre des systèmes de substrat |
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TWI802062B (zh) | 2023-05-11 |
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