WO2022077774A1 - Panneau d'affichage et son procédé de fabrication - Google Patents

Panneau d'affichage et son procédé de fabrication Download PDF

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Publication number
WO2022077774A1
WO2022077774A1 PCT/CN2020/140531 CN2020140531W WO2022077774A1 WO 2022077774 A1 WO2022077774 A1 WO 2022077774A1 CN 2020140531 W CN2020140531 W CN 2020140531W WO 2022077774 A1 WO2022077774 A1 WO 2022077774A1
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WO
WIPO (PCT)
Prior art keywords
layer
water vapor
vapor barrier
microcrystalline
display panel
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Application number
PCT/CN2020/140531
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English (en)
Chinese (zh)
Inventor
苗洋
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2022077774A1 publication Critical patent/WO2022077774A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode, Organic Light Emitting Diode
  • OLED display panels have the advantages of self-illumination, no need for backlight, high contrast, wide color gamut, thin thickness, fast response speed and can be used for flexible panels, especially top emission.
  • OLED display panels are considered to be the next-generation flat-panel display technology due to their high aperture ratio.
  • top-emission OLED display panel due to the serious microcavity effect and total reflection of the top-emission OLED display panel, light is reflected back and forth in the display panel, and only light of a specific wavelength can be emitted outside the display panel, thereby making the top-emission OLED display panel.
  • the light extraction efficiency and viewing angle range are greatly affected.
  • the embodiments of the present application provide a display panel and a manufacturing method thereof, which can solve the problem that in the prior art, since the top-emission OLED display panel has relatively serious microcavity effect and total reflection effect, the light extraction of the top-emission OLED display panel is The efficiency and viewing angle range are greatly affected, which in turn affects the technical problem of the display effect of the display panel.
  • an embodiment of the present application provides a display panel, including:
  • the display substrate includes a substrate, a thin film transistor device layer and a light-emitting functional layer sequentially arranged on the substrate;
  • an encapsulation layer disposed on the display substrate and covering at least the light-emitting functional layer, the encapsulation layer comprising at least one water vapor barrier layer;
  • the microcrystalline thin film is disposed on the at least one water vapor barrier layer, and the microcrystalline thin film has nanoparticles in a state of microcrystalline stacking.
  • the encapsulation layer includes a plurality of water vapor barrier layers, and the microcrystalline film is disposed on any one of the plurality of water vapor barrier layers.
  • the encapsulation layer includes a first water vapor barrier layer, a stress buffer layer, and a second water vapor barrier layer sequentially disposed on the display substrate, and the microcrystalline film is disposed on the display substrate. Between the first water vapor barrier layer and the stress buffer layer, or the microcrystalline film is disposed on the second water vapor barrier layer.
  • the nanoparticles comprise metal oxide nanoparticles.
  • the metal oxide nanoparticles include at least one of zinc oxide nanoparticles and titanium dioxide nanoparticles.
  • the projected area of the microcrystalline thin film on the substrate is greater than or equal to the projected area of the light-emitting functional layer on the substrate.
  • the particle size of the nanoparticles ranges from 1 nanometer to 100 nanometers.
  • a display panel which includes:
  • the display substrate includes a substrate, a thin film transistor device layer and a light-emitting functional layer sequentially arranged on the substrate;
  • an encapsulation layer disposed on the display substrate and covering at least the light-emitting functional layer, the encapsulation layer comprising at least one water vapor barrier layer;
  • microcrystalline film disposed on the at least one water vapor barrier layer, and the microcrystalline film has nanoparticles in a state of microcrystalline stacking
  • the microcrystalline film is disposed on any one of the plurality of water vapor barrier layers.
  • the encapsulation layer includes a first water vapor barrier layer, a stress buffer layer, and a second water vapor barrier layer sequentially disposed on the display substrate, and the microcrystalline film is disposed on the display substrate. Between the first water vapor barrier layer and the stress buffer layer, or the microcrystalline film is disposed on the second water vapor barrier layer.
  • the nanoparticles comprise metal oxide nanoparticles.
  • the metal oxide nanoparticles include at least one of zinc oxide nanoparticles and titanium dioxide nanoparticles.
  • the projected area of the microcrystalline thin film on the substrate is greater than or equal to the projected area of the light-emitting functional layer on the substrate.
  • the particle size of the nanoparticles ranges from 1 nanometer to 100 nanometers.
  • a method for manufacturing a display panel comprising the following steps:
  • the thin film transistor device layer and the light-emitting functional layer are sequentially prepared on the substrate to form a display substrate;
  • the encapsulation layer comprising at least one moisture barrier layer
  • a microcrystalline film is prepared on the at least one water vapor barrier layer, and the microcrystalline film has nanoparticles in a state of microcrystalline stacking.
  • the preparing the microcrystalline thin film on the at least one water vapor barrier layer includes:
  • the nanoparticle thin film is annealed or plasma treated to form the microcrystalline thin film.
  • the nanoparticle solution includes at least one of a zinc oxide nanoparticle solution and a titanium dioxide nanoparticle solution.
  • the encapsulation layer includes a first water vapor barrier layer, and the microcrystalline film is prepared on the first water vapor barrier layer;
  • the method further includes:
  • a second water vapor barrier layer is prepared on the stress buffer layer.
  • the particle size of the nanoparticles ranges from 1 nanometer to 100 nanometers.
  • a microcrystalline film is arranged in the encapsulation layer of the display panel. Since the microcrystalline film has nanoparticles in a state of microcrystalline stacking, the microcrystalline film has an orderly structure in nanometer size.
  • the microstructure can reduce the microcavity effect and the total reflection effect in the display panel, thereby improving the light extraction efficiency and viewing angle range of the display panel, and improving the display effect of the display panel.
  • FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of another display panel according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of another display panel according to an embodiment of the present application.
  • FIG. 4 is a flowchart of a method for fabricating a display panel provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present application.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features defined as “first”, “second” may expressly or implicitly include one or more of said features. In the description of the present application, “plurality” means two or more, unless otherwise expressly and specifically defined.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • a first feature "on” or “under” a second feature may include direct contact between the first and second features, or may include the first and second features Not directly but through additional features between them.
  • the first feature being “above”, “over” and “above” the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.
  • the embodiments of the present application are aimed at the prior art, since the top-emission OLED display panel has relatively serious microcavity effect and total reflection effect, so that the light extraction efficiency and viewing angle range of the top-emission OLED display panel are greatly affected, and further Technical issues affecting the display effect of the display panel.
  • the display panel includes: a display substrate 101 , the display substrate 101 includes a substrate 1011 , and a display panel disposed on the substrate 1011 in sequence.
  • the microcrystalline film 103 is arranged in or on the encapsulation layer 102 of the display panel, because The microcrystalline film 103 has nanoparticles in a state of microcrystalline stacking, so that the microcrystalline film 103 has an ordered microstructure in nanometer size, which can reduce the microcavity effect and total reflection effect in the display panel.
  • the microcrystalline film 103 is arranged on the water vapor barrier layer, and The encapsulation effect of the encapsulation layer 102 is not affected.
  • the at least one water vapor barrier layer may include a water vapor barrier layer or a plurality of water vapor barrier layers.
  • the microcrystalline film 103 is disposed on the water vapor barrier layer.
  • the microcrystalline film 103 is disposed on any one of the plurality of water vapor barrier layers.
  • the display panel includes a display substrate 101 , an encapsulation layer 102 disposed on the display substrate 101 , and a microcrystalline film 103 disposed in the encapsulation layer 102 , the adhesive layer 104 disposed on the encapsulation layer 102 and the cover plate 105 attached to the encapsulation layer 102 through the adhesive layer 104 .
  • the display substrate 101 includes a substrate 1011, a thin film transistor device layer 1012 and a light-emitting functional layer 1013 sequentially disposed on the substrate 1011, wherein the thin film transistor device layer 1012 includes a metal oxide thin film transistor device, which may be specifically Including IGZO-TFT, the light-emitting functional layer 1013 includes a top emission organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 103 .
  • the thin film transistor device layer 1012 includes a metal oxide thin film transistor device, which may be specifically Including IGZO-TFT
  • the light-emitting functional layer 1013 includes a top emission organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 103 .
  • the encapsulation layer 102 includes a first water vapor barrier layer 1021, a stress buffer layer 1022 and a second water vapor barrier layer 1023 sequentially disposed on the display substrate 101. Further, the microcrystalline film 103 is disposed on the first water vapor barrier layer 1023. Between a water vapor barrier layer 1021 and the stress buffer layer 1022, and the microcrystalline film 103 is disposed on the first water vapor barrier layer 1021, it will not affect the light emission of the first water vapor barrier layer 1021 The encapsulation effect of the functional layer 1013 .
  • the projected area of the microcrystalline film 103 on the substrate 1011 is greater than or equal to the projected area of the light-emitting functional layer 1013 on the substrate 1011 , that is, the microcrystalline film 103 can cover the display area of the display panel and all non-display areas of the display panel.
  • the nanoparticles in the microcrystalline thin film 103 include metal oxide nanoparticles, specifically, the nanoparticles may include at least one of zinc oxide nanoparticles and titanium dioxide nanoparticles, and further, the nanoparticles
  • the particle size range includes 1nm-100nm.
  • a cover plate 105 is disposed on the side of the encapsulation layer 102 facing away from the display substrate 101 , and the cover plate 105 is attached to a side of the encapsulation layer 102 facing away from the display substrate 101 through the adhesive layer 104 . side.
  • the microcrystalline film 103 has nanoparticles in a state of microcrystalline stacking, so that the microcrystalline film 103 has an ordered microstructure in nanometer size, which can reduce the microcavity effect in the display panel and total reflection, thereby improving the light extraction efficiency and viewing angle range of the display panel, and improving the display effect of the display panel, and the microcrystalline film 103 is disposed on the first water vapor barrier layer 1021, which does not affect the The encapsulation effect of the encapsulation layer 102 .
  • the display panel includes a display substrate 201 , an encapsulation layer 202 disposed on the display substrate 201 , and a microcrystalline film disposed on the encapsulation layer 202 203 .
  • the display substrate 201 includes a substrate 2011, a thin film transistor device layer 2012 and a light emitting functional layer 2013 sequentially disposed on the substrate 2011, wherein the thin film transistor device layer 2012 includes a metal oxide thin film transistor device, which can be specifically Including IGZO-TFT, the light-emitting functional layer 2013 includes a top-emitting organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 203 .
  • the thin film transistor device layer 2012 includes a metal oxide thin film transistor device, which can be specifically Including IGZO-TFT
  • the light-emitting functional layer 2013 includes a top-emitting organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 203 .
  • the encapsulation layer 202 includes a first water vapor barrier layer 2021, a stress buffer layer 2022 and a second water vapor barrier layer 2023 sequentially disposed on the display substrate 201. Further, the microcrystalline film 203 is disposed on the first water vapor barrier layer 202. On the second water vapor barrier layer 2023 , and the microcrystalline film 203 is disposed on the second water vapor barrier layer 2023 , the encapsulation effect of the encapsulation layer 202 on the light-emitting functional layer 2013 is not affected.
  • the projected area of the microcrystalline film 203 on the substrate 2011 is greater than or equal to the projected area of the light-emitting functional layer 2013 on the substrate 2011, that is, the microcrystalline film 203 can cover the display area of the display panel and all non-display areas of the display panel.
  • the nanoparticles in the microcrystalline film 203 include metal oxide nanoparticles, specifically, the nanoparticles may include at least one of zinc oxide nanoparticles and titanium dioxide nanoparticles, and further, the nanoparticles
  • the particle size range includes 1nm-100nm.
  • a cover plate 205 is disposed on the side of the microcrystalline film 203 facing away from the display substrate 201 , and the cover plate 205 is attached to the microcrystalline film 203 facing away from the display substrate 201 through the adhesive layer 204 . side.
  • the microcrystalline film 203 has nanoparticles in a state of microcrystalline stacking, so that the microcrystalline film 203 has an ordered microstructure in nanometer size, which can reduce the microcavity effect in the display panel and total reflection, thereby improving the light extraction efficiency and viewing angle range of the display panel, and improving the display effect of the display panel, and the microcrystalline film 203 is disposed on the second water vapor barrier layer 2023, which does not affect the The encapsulation effect of the encapsulation layer 202 .
  • the display panel includes a display substrate 301 , an encapsulation layer 302 disposed on the display substrate 301 , and a microcrystalline film disposed on the encapsulation layer 302 303 .
  • the display substrate 301 includes a substrate 3011, a thin film transistor device layer 3012 and a light emitting functional layer 3013 sequentially disposed on the substrate 3011, wherein the thin film transistor device layer 3012 includes a metal oxide thin film transistor device, which may be specifically Including IGZO-TFT, the light-emitting functional layer 3013 includes a top emission organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 303 .
  • the thin film transistor device layer 3012 includes a metal oxide thin film transistor device, which may be specifically Including IGZO-TFT
  • the light-emitting functional layer 3013 includes a top emission organic light-emitting device, so that the light-emitting surface of the display panel faces the side of the microcrystalline film 303 .
  • the encapsulation layer 302 includes a water vapor barrier layer 3021 disposed on the display substrate 301, and further, the microcrystalline film 303 is disposed on the water vapor barrier layer 3021, and the microcrystalline film 303 is disposed on the On the water vapor barrier layer 3021, the encapsulation effect of the encapsulation layer 302 on the light-emitting functional layer 3013 will not be affected.
  • the projected area of the microcrystalline film 303 on the substrate 3011 is greater than or equal to the projected area of the light-emitting functional layer 3013 on the substrate 3011, that is, the microcrystalline film 303 can cover the display area of the display panel and all non-display areas of the display panel.
  • the nanoparticles in the microcrystalline film 303 include metal oxide nanoparticles, specifically, the nanoparticles may include at least one of zinc oxide nanoparticles and titanium dioxide nanoparticles, and further, the nanoparticles
  • the particle size range includes 1nm-100nm.
  • cover plate 305 is disposed on the side of the microcrystalline film 303 facing away from the display substrate 301 , and the cover plate 305 is attached to the microcrystalline film 303 through the adhesive layer 304 facing away from the display substrate 301 .
  • One side of the display substrate 301 is described.
  • the microcrystalline film 303 has nanoparticles in a state of microcrystalline stacking, so that the microcrystalline film 303 has an ordered microstructure in nanometer size, which can reduce the microcavity effect in the display panel and total reflection, thereby improving the light extraction efficiency and viewing angle range of the display panel, and improving the display effect of the display panel, and the microcrystalline film 303 is disposed on the water vapor barrier layer 3021, which does not affect the encapsulation layer. 302 encapsulation effect.
  • the embodiment of the present application also provides the method for fabricating the display panel described in the above embodiment. Please refer to FIG. 1 , FIG. 4 , FIG. 5 , FIG. 6 , FIG. 7 , and FIG. Taking the structure of the display panel as an example, for illustration, the method includes the following steps:
  • the thin film transistor device layer 1012 and the light emitting functional layer 1013 are sequentially prepared on the substrate 1011 to form the display substrate 101 .
  • the substrate 1011 is provided and is not limited to a flexible substrate or a rigid substrate.
  • a thin film transistor device layer 1012 is prepared on the substrate 1011, and the thin film transistor device layer 1012 may include metal oxide thin film transistor devices, and may specifically include IGZO-TFT.
  • a light-emitting functional layer 1013 is prepared on the thin film transistor device layer 1012 , and the light-emitting functional layer 1013 includes a top-emitting organic light-emitting device, so that the light-emitting surface of the display panel faces the microcrystalline film 103 side.
  • a microcrystalline film 103 is prepared on the at least one water vapor barrier layer, and the microcrystalline film 103 has nanoparticles in a state of microcrystalline stacking.
  • the encapsulation layer 102 is prepared to cover at least the light-emitting functional layer 1013, and the encapsulation layer 102 includes a first moisture barrier layer 1021 disposed on the display substrate 101, and the microcrystalline film 103 is disposed on the first water vapor barrier layer 1021. on the water vapor barrier layer 1021.
  • the first water vapor barrier layer 1021 can be prepared on the display substrate 101 by a vapor deposition method or an atomic layer deposition method, wherein the material of the first water vapor barrier layer 1021 includes Al 2 O 3 , TiO 2 A composite material of one or more of , SiN x , SiCN x and SiO x .
  • step S30 includes:
  • the method further includes: preparing a stress buffer layer 1022 on the microcrystalline film 103, and preparing a second water vapor barrier layer 1023 on the stress buffer layer 1022.
  • the encapsulation layer 102 prepared in the step S20 only includes the first water vapor barrier layer 1021, and the rest of the stress buffer layer Both the 1022 and the second water vapor barrier layer 1023 are formed on the microcrystalline film 103 after the microcrystalline film 103 is prepared.
  • the encapsulation layer 102 prepared in the step S20 includes the first water vapor barrier layer 1021.
  • the stress buffer layer 1022 and the second moisture barrier layer 1023 according to actual needs, part of the encapsulation layer 102 can be prepared first, and then the microcrystalline film 103 can be prepared, or all the encapsulation layers 102 can be prepared first, Then, the microcrystalline thin film 103 is prepared, which is not limited herein.
  • the stress buffer layer 1022 can be prepared on the microcrystalline film 103 by vapor deposition method, and the material of the stress buffer layer 1022 includes acrylic, hexamethyldisiloxane, polyacrylate, polycarbonate. One or more combination materials of esters and polystyrene.
  • the second water vapor barrier layer 1023 is prepared on the stress buffer layer 1022 by vapor deposition method or atomic layer deposition method to form the encapsulation layer 102, wherein the material of the second water vapor barrier layer 1023 includes Al One or more combination materials of 2 O 3 , TiO 2 , SiN x , SiCN x and SiO x .
  • the encapsulation layer 102 includes a water vapor barrier layer, and the microcrystalline film 103 is disposed on the water vapor barrier layer, or the encapsulation layer 102 includes a plurality of water vapor barrier layers, and The microcrystalline film 103 is disposed on any one of the plurality of water vapor barrier layers.
  • the packaging layer 102 has a plurality of water vapor barrier layers
  • the packaging layer 102 also includes a plurality of water vapor barrier layers. A stress buffer layer with alternating layers and covered by the water vapor barrier layer.
  • the microcrystalline film 103 is arranged on the water vapor barrier layer 1021 or 1023, but not on the stress buffer layer 1022.
  • the microcrystalline film 103 is arranged on the water vapor barrier layer on the side closest to the display substrate 101. to enhance its improvement effect.
  • the adhesive layer 104 is formed by coating sealant or other adhesive material on the cover plate 105 , and the side of the cover plate 105 with the adhesive layer 104 and the encapsulation layer 102 facing away from the display substrate 101 is laminated on one side and cured by ultraviolet light or heating to form the display panel.
  • the microcrystalline film by disposing a microcrystalline film in or on the encapsulation layer of the display panel, without affecting the encapsulation effect of the encapsulation layer, since the microcrystalline film has nanoparticles in a state of microcrystalline stacking,
  • the microcrystalline film has an orderly microstructure in nanometer size, which can reduce the microcavity effect and total reflection in the display panel, thereby improving the light extraction efficiency and viewing angle range of the display panel, and improving the display effect of the display panel.
  • a display panel and a manufacturing method thereof provided by the embodiments of the present application have been described in detail above.
  • the principles and implementations of the present application are described with specific examples in this article.
  • the technical solution of the application and its core idea; those of ordinary skill in the art should understand that: it can still make modifications to the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements to some of the technical features; and these modifications or replacements,
  • the essence of the corresponding technical solutions does not deviate from the scope of the technical solutions of the embodiments of the present application.

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Abstract

La présente invention concerne un panneau d'affichage et son procédé de fabrication, comprenant : une base d'affichage, la base d'affichage comprenant un substrat, et une couche de dispositif de transistor à couches minces et une couche de fonction d'émission de lumière qui sont agencées successivement sur le substrat ; une couche d'encapsulation, qui est disposée sur la base d'affichage et recouvre au moins la couche de fonction d'émission de lumière, la couche d'encapsulation comprenant au moins une couche de blocage de vapeur d'eau ; et un film microcristallin, qui est disposé sur la ou les couches de blocage de vapeur d'eau, des nanoparticules dans un état empilé microcristallin étant disposées à l'intérieur du film microcristallin.
PCT/CN2020/140531 2020-10-14 2020-12-29 Panneau d'affichage et son procédé de fabrication WO2022077774A1 (fr)

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CN202011093563.1A CN112259693A (zh) 2020-10-14 2020-10-14 显示面板及其制作方法
CN202011093563.1 2020-10-14

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CN113871546A (zh) * 2021-09-16 2021-12-31 深圳市华星光电半导体显示技术有限公司 Oled显示面板及其制作方法、发光装置

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