WO2022067945A1 - Mems 麦克风 - Google Patents

Mems 麦克风 Download PDF

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Publication number
WO2022067945A1
WO2022067945A1 PCT/CN2020/125734 CN2020125734W WO2022067945A1 WO 2022067945 A1 WO2022067945 A1 WO 2022067945A1 CN 2020125734 W CN2020125734 W CN 2020125734W WO 2022067945 A1 WO2022067945 A1 WO 2022067945A1
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Prior art keywords
chip
spacer
hole
mems
base
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PCT/CN2020/125734
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English (en)
French (fr)
Inventor
雅尼克•凯夫兰
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瑞声声学科技(深圳)有限公司
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Publication of WO2022067945A1 publication Critical patent/WO2022067945A1/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/08—Mouthpieces; Microphones; Attachments therefor

Definitions

  • the present invention relates to the field of microphones, in particular to a MEMS microphone.
  • a MEMS microphone in the related art includes a circuit board 1 ′, a housing 3 ′ that is covered with the circuit board 1 ′ to form a receiving cavity 2 ′, and a housing 3 ′ disposed on the circuit board 1 ′ and located in the receiving cavity 2 ′.
  • the ASIC chip 4', the MEMS chip 5' in the cavity 2', the circuit board 1', the ASIC chip 4' and the MEMS chip 5' are electrically connected by wires, and the circuit board 1' or the shell 3' is provided with a sound input hole 6', the MEMS chip 5' includes a substrate with a back cavity and a capacitor system fixed on the substrate and covering the back cavity, and one end of the substrate away from the capacitor system is mounted on the circuit board 1'.
  • this MEMS microphone has a lower signal-to-noise ratio.
  • the purpose of the present invention is to provide a MEMS microphone to solve the problem of low signal-to-noise ratio of the MEMS microphone in the related art.
  • the present invention provides a MEMS microphone, which includes a circuit board, a casing connected with the circuit board to form a receiving cavity, and an ASIC chip and a MEMS chip arranged in the receiving cavity, the circuit board, The ASIC chip and the MEMS chip are electrically connected, and the MEMS chip includes a base with a back cavity, a back plate fixed on one side of the base, and a back plate fixed on the back plate away from the base.
  • the vibrating membrane on the side includes a vibrating part facing the back cavity and a fixing part arranged around the vibrating part and fixed on the back plate, the vibrating part is provided with a ventilation hole, so At least one of the circuit board and the casing has a base plate with a sound input hole, the base plate is located on the side of the diaphragm away from the base, and a fixed part and the base plate are sandwiched between the base plate.
  • a bracket is provided at intervals from the ASIC chip, and the bracket has a front cavity that communicates with the sound input hole and the ventilation hole, and the front cavity communicates with the back cavity through the ventilation hole.
  • the circuit board has the substrate, the ASIC chip is fixed on the substrate, and the ASIC chip and the MEMS chip are electrically connected to each other through the circuit board.
  • the stent includes an annular first spacer, the first spacer is made of a conductive material.
  • the support includes a ring-shaped first spacer, and the first spacer is made of insulating material; the base has a conductive surface, and the MEMS chip is connected to the MEMS chip through wires bonded on the conductive surface.
  • the ASIC chip is electrically connected.
  • the first spacer includes a first wall adjacent to the diaphragm, a second wall adjacent to the substrate, and a wall connected between the first wall and the second wall
  • the first wall, the second wall and the pair of third walls together form the front cavity.
  • a first hole is formed through the first wall
  • a second hole is formed through the second wall
  • the first hole communicates with the ventilation hole
  • the second hole communicates with the front cavity and the sound input hole.
  • the diameter of the first hole is larger than the diameter of the ventilation hole, and the diameter of the second hole is not larger than the diameter of the sound input hole.
  • the bracket includes a second spacer and a silicon wafer, the second spacer is sandwiched between the silicon wafer and the fixing portion, and the silicon wafer is sandwiched between the second spacer and the fixing portion between the substrates, the second spacer has a first hole, the silicon wafer has a second hole, the front cavity is formed between the second spacer and the silicon wafer and is connected with the first hole communicate with the second hole.
  • the diameter of the second hole is smaller than the diameter of the first hole.
  • the second spacer is made of insulating material
  • the base has a conductive surface
  • the MEMS chip is electrically connected to the silicon chip through wires bonded on the conductive surface
  • the silicon chip is The wires are electrically connected to the ASIC chip.
  • the second spacer is made of conductive material
  • the MEMS chip is electrically connected to the silicon chip through the second spacer
  • the silicon chip is electrically connected to the ASIC chip through wires.
  • the second spacer is made of conductive material
  • the MEMS chip is electrically connected to the silicon chip through the second spacer
  • the silicon chip is electrically connected to the ASIC chip through the circuit board .
  • the second spacer is made of insulating material
  • the substrate has a conductive surface
  • the MEMS chip is electrically connected to the ASIC chip through wires bonded on the conductive surface.
  • one of the circuit board and the housing is provided with a substrate having a sound input hole, and a MEMS microphone is provided between the fixing portion and the substrate.
  • the ASIC chips are arranged at intervals, and the bracket has a front cavity that communicates with the sound input hole and the ventilation hole, and the front cavity is communicated with the back cavity through the ventilation hole, so that the MEMS microphone has higher signal-to-noise ratio.
  • FIG. 1 is a cross-sectional view of a MEMS microphone in the related art.
  • FIG. 2 is a cross-sectional view of another MEMS microphone in the related art.
  • 3 and 4 are cross-sectional views of the first embodiment of the MEMS microphone of the present invention.
  • 5 to 8 are cross-sectional views of the second embodiment of the MEMS microphone of the present invention.
  • FIG. 9 is a cross-sectional view of the third embodiment of the MEMS microphone of the present invention.
  • the MEMS microphone 10 includes a circuit board 11 , a housing 12 covering the circuit board 11 to form a receiving cavity 100 , and an ASIC chip 13 and a MEMS chip 14 disposed in the receiving cavity 100 .
  • the circuit board 11 , the ASIC chip 13 and the MEMS chip 14 are electrically connected.
  • the circuit board 11 has a base plate 111, and the base plate 111 has a sound input hole 110 formed therethrough.
  • the MEMS chip 14 includes a base 141 having a back cavity 140 , a back plate 142 fixed on one side of the base 141 , and a back plate 142 fixed on a side of the back plate 142 away from the base 141 .
  • the diaphragm 143 and the substrate 111 are located on the side of the diaphragm 143 away from the base 141 .
  • the diaphragm 143 has a vent hole 1430 , the vent hole 1430 together with the receiving cavity 100 and the sound input hole 110 , so as to achieve static pressure equalization.
  • the vibrating membrane 143 includes a vibrating portion 1431 facing the back cavity 140 and a fixing portion 1432 surrounding the vibrating portion 1431 and fixed to the back plate 142 .
  • the vent hole 1430 penetrates the vibrating portion 1431 .
  • the MEMS microphone 10 further includes a bracket 15 , the bracket 15 has a front cavity 150 communicating with the sound input hole 110 and the ventilation hole 1430 , and the front cavity 150 communicates with the back cavity 140 through the ventilation hole 1430 .
  • the bracket 15 includes an annular first spacer 151 , the first spacer 151 covers the sound input hole 110 , and the first spacer 151 is sandwiched between the fixing portion 1432 of the diaphragm 143 and the substrate 111 , and is connected to the ASIC chip 13 . interval setting.
  • the first spacer 151 includes a first wall 1511 adjacent to the diaphragm 143 , a second wall 1512 opposite to the first wall 1511 and adjacent to the substrate 111 , and a second wall 1512 connected between the first wall 1511 and the second wall 1512 .
  • the pair of third walls 1513 , the first wall 1511 , the second wall 1512 and the pair of third walls 1513 jointly enclose the front cavity 150 .
  • a first hole 1514 is formed through the first wall 1511
  • a second hole 1515 is formed through the second wall 1512 .
  • the diameter of the first hole 1514 is larger than that of the ventilation hole 1430 , and the diameter of the second hole 1515 is not larger than that of the sound input hole 110 . It can be understood that, in other embodiments, the diameter of the second hole 1515 can also be set to be larger than the diameter of the sound input hole 110 .
  • the first spacer 151 may be made of conductive material or insulating material.
  • the first spacer 151 is made of conductive material
  • the ASIC chip 13 is mounted on the substrate 111
  • the diaphragm 143 is electrically connected to the first spacer 151
  • the first spacer 151 is connected to the ASIC chip through the circuit board 11 . 13 Electrical connections.
  • the first spacer 151 is made of insulating material
  • the base 141 has a conductive surface 1411 on the side away from the backplane 142
  • the conductive surface 1411 can be connected to the ASIC chip 13 via the wires 16 .
  • the conductive surface 1411 may be formed by depositing a conductive layer on the surface of the substrate 141 .
  • the circuit board, the MEMS chip, the casing and the ASIC chip are the same as those in the first embodiment.
  • the only difference between the second embodiment and the first embodiment is that the bracket 25 includes the second spacer 251 and the second spacer 251 and the second spacer.
  • Body 251 forms silicon wafer 253 of front cavity 250 .
  • the silicon wafer 253 includes a first base 2531 and a first connection portion 2532 fixed to the first base 2531 .
  • the second spacer 251 includes a second base 2511 and a second connection part 2512 fixed to the second base 2511 .
  • the first base 2531 is fixed on the second base 2511 .
  • the first connecting portion 2532 and the second connecting portion 2512 are opposite and spaced to form the front cavity 250 .
  • the first hole 2514 is formed on the second connecting portion 2512
  • the second hole 2515 is formed on the first connecting portion 2532 .
  • the diameter of the second hole 2515 is not larger than that of the sound input hole 210 .
  • the first hole 2514 and the second hole 2515 communicate with each other through the front cavity 250 .
  • the diameter of the second hole 2515 matches that of the first hole 2514 .
  • the diameter of the second hole 2515 is smaller than that of the first hole 2514 .
  • the second base 2511 of the second spacer 251 is sandwiched between the diaphragm 243 and the silicon wafer 253 .
  • the first base 2531 of the silicon wafer 253 is disposed between the second base 2511 and the substrate 211 .
  • the second spacer 251 and the silicon wafer 253 may be connected to each other by wafer-to-wafer bonding, and the bracket 25 may be mounted on the substrate 211 by glue or other bracket mounting techniques.
  • the base 241 of the MEMS chip 24 has a conductive surface 2411 , the MEMS chip 24 is electrically connected to the ASIC chip 23 through the wires 26 bonded on the conductive surface 2411 , and the second spacer 251 may be made of insulating material .
  • the base 241 of the MEMS chip 24 has a conductive surface 2411 , the MEMS chip 24 is electrically connected to the first base 2531 of the silicon wafer 253 through the wires 27 bonded on the conductive surface 2411 , and the first base 2531 of the silicon wafer 253 is electrically connected.
  • a base 2531 is electrically connected to the ASIC chip 23 through wires 28 .
  • the second spacer 251 may be made of an insulating material.
  • the second spacer 251 is made of conductive material
  • the MEMS chip 24 is electrically connected to the silicon chip 253 through the second spacer 251
  • the silicon chip 253 is electrically connected to the ASIC chip 23 through the wire 29 .
  • the second spacer 251 is made of conductive material, and the MEMS chip 24 is electrically connected to the silicon wafer 253 through the second spacer 251 .
  • the silicon wafer 253 is electrically connected to the ASIC chip 23 via the circuit board 21 .
  • the housing 42 has a base plate 421 , and the base plate 421 is provided with a sound input hole 420 .
  • the ASIC chip 43 and the MEMS chip 44 are mounted on the substrate 421 , and the bracket 45 is sandwiched between the MEMS chip 44 and the substrate 421 .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)

Abstract

本发明提供了一种MEMS麦克风，其包括线路板、与线路板盖接形成收容腔的外壳以及设于收容腔内的ASIC芯片和MEMS芯片，线路板、ASIC芯片及MEMS芯片之间电连接，MEMS芯片包括具有背腔的基底、固设于基底一侧上的背板以及固设于背板远离基底一侧上的振膜，振膜包括正对背腔的振动部及环绕振动部设置并固定于背板的固定部，振动部上贯穿设有通气孔，线路板和外壳中的其中至少一方具有开设有声音输入孔的基板，基板位于振膜背离基底的一侧，固定部和基板之间夹设有支架，支架与ASIC芯片间隔设置，且支架具有连通声音输入孔和通气孔的前腔，前腔通过通气孔与背腔连通。与相关技术相比，本发明的MEMS麦克风具有更高的信噪比。

Description

MEMS麦克风 技术领域
本发明涉及麦克风领域，尤其涉及一种MEMS麦克风。
 背景技术
随着无线通讯的发展，全球移动电话用户越来越多，用户对移动电话的要求己不仅满足于通话，而且要能够提供高质量的通话效果，尤其是目前移动多媒体技术的发展，移动电话的通话质量更显重要，移动电话的麦克风作为移动电话的语音拾取装置，其设计好坏直接影响通话质量。
如图1和图2所示，相关技术中的MEMS麦克风包括线路板1'、与线路板1'盖接形成收容腔2'的外壳3'以及设于线路板1'上并位于所述收容腔2'内的ASIC芯片4'、MEMS芯片5'，线路板1'、ASIC芯片4'及MEMS芯片5'之间通过导线电连接，线路板1'或外壳3'上设有声音输入孔6'，MEMS芯片5'包括具有背腔的基底和固定在基底上并覆盖背腔的电容系统，基底远离电容系统的一端安装在线路板1'上。然而，这种MEMS麦克风具有较低的信噪比。
因此，实有必要提供一种新的MEMS麦克风解决上述技术问题。
 技术问题
本发明的目的在于提供一种MEMS麦克风，以解决相关技术中的MEMS麦克风的信噪比较低的问题。
 技术解决方案
为了达到上述目的，本发明提供了一种MEMS麦克风，包括线路板、与所述线路板盖接形成收容腔的外壳以及设于所述收容腔内的ASIC芯片和MEMS芯片，所述线路板、所述ASIC芯片及所述MEMS芯片之间电连接，所述MEMS芯片包括具有背腔的基底、固设于所述基底一侧上的背板以及固设于所述背板远离所述基底一侧上的振膜，所述振膜包括正对所述背腔的振动部及环绕所述振动部设置并固定于所述背板的固定部，所述振动部上贯穿设有通气孔，所述线路板和所述外壳中的至少其中一方具有开设有声音输入孔的基板，所述基板位于所述振膜背离所述基底的一侧，所述固定部和所述基板之间夹设有支架，所述支架与所述ASIC芯片间隔设置，且所述支架具有连通所述声音输入孔和所述通气孔的前腔，所述前腔通过所述通气孔与所述背腔连通。
优选地，所述线路板具有所述基板，所述ASIC芯片固设于所述基板上，且所述ASIC芯片和所述MEMS芯片通过所述线路板彼此电连接。
优选地，所述支架包括环状的第一间隔体，所述第一间隔体由导电材料制成。
优选地，所述支架包括环形的第一间隔体，所述第一间隔体由绝缘材料制成；所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述ASIC芯片电连接。
优选地，所述第一间隔体包括与所述振膜相邻的第一壁、与所述基板相邻的第二壁以及连接于所述第一壁与所述第二壁之间的一对第三壁，所述第一壁、所述第二壁和所述一对第三壁共同围合形成所述前腔。
优选地，所述第一壁上贯穿设有第一孔，所述第二壁上贯穿设有第二孔，所述第一孔与所述通气孔连通，所述第二孔连通所述前腔和所述声音输入孔。
优选地，所述第一孔的孔径大于所述通气孔的孔径，所述第二孔的孔径不大于所述声音输入孔的孔径。
优选地，所述支架包括第二间隔体和硅片，所述第二间隔体夹在所述硅片和所述固定部之间，所述硅片夹在所述第二间隔体和所述基板之间，所述第二间隔体具有第一孔，所述硅片具有第二孔，所述前腔形成于所述第二间隔体和所述硅片之间并与所述第一孔和所述第二孔连通。
优选地，所述第二孔的孔径小于所述第一孔的孔径。
优选地，所述第二间隔体由绝缘材料制成，所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述硅片电连接，所述硅片通过导线与所述ASIC芯片电连接。
优选地，所述第二间隔体由导电材料制成，所述MEMS芯片通过所述第二间隔体与所述硅片电连接，所述硅片通过导线与所述ASIC芯片电连接。
优选地，所述第二间隔体由导电材料制成，所述MEMS芯片通过所述第二间隔体与所述硅片电连接，所述硅片通过所述线路板与所述ASIC芯片电连接。
优选地，所述第二间隔体由绝缘材料制成，所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述ASIC芯片电连接。
 有益效果
与相关技术相比，本发明的MEMS麦克风通过在所述线路板和所述外壳中的其中一方设置为具有开设有声音输入孔的基板，并在所述固定部和所述基板之间设置与所述ASIC芯片间隔设置的支架，且所述支架具有连通所述声音输入孔和所述通气孔的前腔，所述前腔通过所述通气孔与所述背腔连通，从而使得MEMS麦克风具有更高的信噪比。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中。
图1是相关技术中一MEMS麦克风的剖视图。
图2是相关技术中另一MEMS麦克风的剖视图。
图3、4是本发明MEMS麦克风实施例一的剖视图。
图5至8是本发明MEMS麦克风实施例二的剖视图。
图9是本发明MEMS麦克风实施例三的剖视图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
实施例一
如图3和图4所示，MEMS麦克风10包括线路板11、与所述线路板11盖接形成收容腔100的外壳12以及设于所述收容腔100内的ASIC芯片13、MEMS芯片14，线路板11、ASIC芯片13及MEMS芯片14之间电连接。
线路板11具有基板111，基板111开设有贯穿其上的声音输入孔110。
如图3所示，MEMS芯片14包括具有背腔140的基底141、固设于所述基底141一侧上的背板142以及固设于所述背板142远离所述基底141一侧上的振膜143，基板111位于振膜143背离基底141的一侧。振膜143具有通气孔1430，通气孔1430连同收容腔100与声音输入孔110，从而实现静压均衡。
振膜143包括正对背腔140的振动部1431及环绕振动部1431设置并固定于背板142的固定部1432，通气孔1430贯穿振动部1431。
MEMS麦克风10还包括支架15，支架15具有连通声音输入孔110和通气孔1430的前腔150，前腔150通过通气孔1430与背腔140连通。
支架15包括环形的第一间隔体151，第一间隔体151覆盖在声音输入孔110上，且第一间隔体151夹在振膜143的固定部1432和基板111之间，并与ASIC芯片13间隔设置。
第一间隔体151包括与振膜143相邻的第一壁1511、与第一壁1511相对并与基板111相邻的第二壁1512以及连接于第一壁1511和第二壁1512之间的一对第三壁1513，第一壁1511、第二壁1512及一对第三壁1513共同围合形成前腔150。
第一壁1511上贯穿设有第一孔1514，第二壁1512上贯穿设有第二孔1515，第一孔1514与通气孔1430连通，第二孔1515连通前腔150和声音输入孔110。
第一孔1514的孔径大于通气孔1430的孔径，第二孔1515的孔径不大于声音输入孔110的孔径。可以理解的是，在其他实施例中，第二孔1515的孔径也可以设置成大于声音输入孔110的孔径。
第一间隔体151可以由导电材料制成，也可以由绝缘材料制成。
如图3所示，第一间隔体151由导电材料制成，ASIC芯片13安装在基板111上，振膜143与第一间隔体151电连接，第一间隔体151通过线路板11与ASIC芯片13电连接。
如图4所示，第一间隔体151由绝缘材料制成，基底141背离背板142的一侧上具有导电表面1411，且导电表面1411可经由导线16与ASIC芯片13连接。导电表面1411可由导电层沉积于基底141表面形成。
实施例二
如图5至图8所示，线路板、MEMS芯片、外壳和ASIC芯片与实施例一相同，实施例二与实施例一的区别仅在于：支架25包括第二间隔体251以及与第二间隔体251形成前腔250的硅片253。
硅片253包括第一基座2531和固定到第一基座2531的第一连接部2532。第二间隔体251包括第二基座2511和固定到第二基座2511的第二连接部2512。第一基座2531固设于第二基座2511上。第一连接部2532与第二连接部2512相对且间隔设置以形成前腔250，第一孔2514形成于第二连接部2512上，第二孔2515形成于第一连接部2532上。
第二孔2515的孔径不大于声音输入孔210的孔径。
第一孔2514和第二孔2515通过前腔250连通，第二孔2515的孔径与第一孔2514的孔径相匹配，优选地，第二孔2515的孔径小于第一孔2514的孔径。
第二间隔体251的第二基座2511夹在振膜243和硅片253之间。硅片253的第一基座2531设置在第二基座2511和基板211之间。第二间隔体251和硅片253可以通过晶圆-晶圆键合彼此连接，并且通过胶水或其他支架安装技术将支架25安装在基板211上。
如图5所示，MEMS芯片24的基底241具有导电表面2411，MEMS芯片24通过键合在导电表面2411上的导线26与ASIC芯片23电连接，并且第二间隔体251可以由绝缘材料制成。
如图6所示，MEMS芯片24的基底241具有导电表面2411，MEMS芯片24通过键合在导电表面2411上的导线27与硅片253的第一基座2531电连接，并且硅片253的第一基座2531通过导线28与ASIC芯片23电连接。第二间隔体251可以由绝缘材料制成。
如图7所示，第二间隔体251由导电材料制成，MEMS芯片24通过第二间隔体251与硅片253电连接，硅片253通过导线29与ASIC芯片23电连接。
如图8所示，第二间隔体251由导电材料制成，MEMS芯片24通过第二间隔体251与硅片253电连接。硅片253经由线路板21与ASIC芯片23电连接。
实施例三
如图9所示，外壳42具有基板421，并且基板421上开设有声音输入孔420。ASIC芯片43和MEMS芯片44安装在基板421上，支架45夹在MEMS芯片44和基板421之间。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (13)

  1. 一种MEMS麦克风，包括线路板、与所述线路板盖接形成收容腔的外壳以及设于所述收容腔内的ASIC芯片和MEMS芯片，所述线路板、所述ASIC芯片及所述MEMS芯片之间电连接，所述MEMS芯片包括具有背腔的基底、固设于所述基底一侧上的背板以及固设于所述背板远离所述基底一侧上的振膜，所述振膜包括正对所述背腔的振动部及环绕所述振动部设置并固定于所述背板的固定部，所述振动部上贯穿设有通气孔，其特征在于：所述线路板和所述外壳中的至少其中一方具有开设有声音输入孔的基板，所述基板位于所述振膜背离所述基底的一侧，所述固定部和所述基板之间夹设有支架，所述支架与所述ASIC芯片间隔设置，且所述支架具有连通所述声音输入孔和所述通气孔的前腔，所述前腔通过所述通气孔与所述背腔连通。
  2. 根据权利要求1所述的MEMS麦克风，其特征在于，所述线路板具有所述基板，所述ASIC芯片固设于所述基板上，且所述ASIC芯片和所述MEMS芯片通过所述线路板彼此电连接。
  3. 根据权利要求1所述的MEMS麦克风，其特征在于，所述支架包括环状的第一间隔体，所述第一间隔体由导电材料制成。
  4. 根据权利要求1所述的MEMS麦克风，其特征在于，所述支架包括环形的第一间隔体，所述第一间隔体由绝缘材料制成，所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述ASIC芯片电连接。
  5. 根据权利要求3或4所述的MEMS麦克风，其特征在于，所述第一间隔体包括与所述振膜相邻的第一壁、与所述基板相邻的第二壁以及连接于所述第一壁与所述第二壁之间的一对第三壁，所述第一壁、所述第二壁和所述一对第三壁共同围合形成所述前腔。
  6. 根据权利要求5所述的MEMS麦克风，其特征在于，所述第一壁上贯穿设有第一孔，所述第二壁上贯穿设有第二孔，所述第一孔与所述通气孔连通，所述第二孔连通所述前腔和所述声音输入孔。
  7. 根据权利要求6所述的MEMS麦克风，其特征在于，所述第一孔的孔径大于所述通气孔的孔径，所述第二孔的孔径不大于所述声音输入孔的孔径。
  8. 根据权利要求1所述的MEMS麦克风，其特征在于，所述支架包括第二间隔体和硅片，所述第二间隔体夹在所述硅片和所述固定部之间，所述硅片夹在所述第二间隔体和所述基板之间，所述第二间隔体具有第一孔，所述硅片具有第二孔，所述前腔形成于所述第二间隔体和所述硅片之间并与所述第一孔和所述第二孔连通。
  9. 根据权利要求8所述的MEMS麦克风，其特征在于，所述第二孔的孔径小于所述第一孔的孔径。
  10. 根据权利要求8所述的MEMS麦克风，其特征在于，所述第二间隔体由绝缘材料制成，所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述硅片电连接，所述硅片通过导线与所述ASIC芯片电连接。
  11. 根据权利要求8所述的MEMS麦克风，其特征在于，所述第二间隔体由导电材料制成，所述MEMS芯片通过所述第二间隔体与所述硅片电连接，所述硅片通过导线与所述ASIC芯片电连接。
  12. 根据权利要求8所述的MEMS麦克风，其特征在于，所述第二间隔体由导电材料制成，所述MEMS芯片通过所述第二间隔体与所述硅片电连接，所述硅片通过所述线路板与所述ASIC芯片电连接。
  13. 根据权利要求8所述的MEMS麦克风，其特征在于，所述第二间隔体由绝缘材料制成，所述基底具有导电表面，所述MEMS芯片通过键合在所述导电表面上的导线与所述ASIC芯片电连接。
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