WO2022062446A1 - 一种单壁碳纳米管的连续制备系统及制备方法 - Google Patents

一种单壁碳纳米管的连续制备系统及制备方法 Download PDF

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WO2022062446A1
WO2022062446A1 PCT/CN2021/096289 CN2021096289W WO2022062446A1 WO 2022062446 A1 WO2022062446 A1 WO 2022062446A1 CN 2021096289 W CN2021096289 W CN 2021096289W WO 2022062446 A1 WO2022062446 A1 WO 2022062446A1
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gas
reaction chamber
carbon nanotubes
high temperature
temperature reaction
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PCT/CN2021/096289
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English (en)
French (fr)
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陈名海
梁晨
袁鑫鑫
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江西铜业技术研究院有限公司
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Priority to JP2023518542A priority Critical patent/JP2023543207A/ja
Publication of WO2022062446A1 publication Critical patent/WO2022062446A1/zh

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/16Preparation
    • C01B32/164Preparation involving continuous processes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/159Carbon nanotubes single-walled
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/16Preparation
    • C01B32/162Preparation characterised by catalysts
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/02Single-walled nanotubes

Definitions

  • the invention belongs to the technical field of new materials, and relates to a nano carbon material, in particular to a continuous preparation system and preparation method of single-walled carbon nano tubes.
  • the preparation methods of single-walled carbon nanotubes mainly include: chemical vapor deposition method, arc ablation method, laser method, plasma method, etc.
  • Chemical vapor deposition is a common process route. Due to the inherent low reaction temperature, the low degree of crystallization of carbon nanotubes is insufficient, resulting in high defect content of single-walled carbon nanotubes prepared by chemical vapor deposition. Li Qingwen et al.
  • Chinese Invention Patent 201010234322.4 discloses a method for preparing single-walled carbon nanotubes with a controllable diameter. A high-temperature arc ablation method is used to fill carbon powder and metal catalyst into carbon electrodes, and single-walled carbon nanotubes are prepared by direct arc ablation. Tube.
  • the main purpose of the present invention is to provide a continuous preparation device and method of single-walled carbon nanotubes to overcome the deficiencies in the prior art.
  • the technical solution of the present invention is: a continuous preparation system for single-walled carbon nanotubes, and the carbon nanotube preparation device includes;
  • the high temperature reaction chamber is used for generating a direct current arc flame to combine the metal catalyst evaporation as a counter electrode with the organic carbon source of high temperature cracking to catalyze the formation of single-walled carbon nanotubes;
  • the collecting device is used to cool the generated single-walled carbon nanotubes, separate and enrich the cooled single-walled carbon nanotubes by using a magnetic field separation method, and then collect them by gas backflushing;
  • the auxiliary unit is used to assist the high-temperature reaction chamber and the collection device to complete the continuous preparation of single-walled carbon nanotubes;
  • the high temperature reaction chamber is connected in series with the collection device, and the auxiliary units are respectively connected with the high temperature reaction chamber and the collection device.
  • the auxiliary unit includes a vacuum unit, a gas circuit unit, a power supply unit and a feeding unit;
  • the bottom of the high-temperature reaction chamber is provided with a bottom electrode, the bottom electrode is provided with a crucible for containing catalyst, and the internal arc gun of the high-temperature reaction chamber which is inserted obliquely is located vertically above the bottom electrode;
  • An organic carbon source mixed gas interface is arranged on the side wall of the high temperature reaction chamber, and extends into the interior of the high temperature reaction chamber along the tangent of the side wall of the high temperature reaction chamber; and the organic carbon source mixed gas interface is located at the The height of the side wall of the high temperature reaction chamber is not higher than the height of the crucible,
  • the top of the high-temperature reaction chamber is opened directly above, and is connected with the collection device through a pipeline, and a feeding interface is provided on the top side of the high-temperature reactor obliquely above the bottom electrode;
  • the vacuum unit is connected with the tail gas outlet of the gas-solid separator;
  • the gas circuit unit is respectively connected with the organic carbon source mixed gas interface and the carrier gas inlet of the high temperature reaction chamber;
  • the power supply unit provides power
  • the feeding unit is connected with the feeding interface of the high temperature reaction chamber.
  • the number of the collection device is one or two;
  • the collecting device includes a feeding pipe, a cooling unit, a gas-solid separator and a powder collecting tank;
  • one end of the feeding pipe is communicated with the top of the high temperature reaction chamber, and the other end is communicated with the gas-solid separator and the powder material collection tank respectively through a tee, and the gas-solid separator and the powder material collection tank are respectively communicated with each other.
  • An intermediate valve is arranged between the tanks, and the cooling unit is arranged on the material conveying pipe, so that a cooling cavity is formed in the material conveying pipe provided with the cooling unit;
  • the gas-solid separator is provided with a tail gas outlet and a backflushing inlet, and the backflushing inlet is connected to the gas circuit unit.
  • the high-temperature reaction chamber includes a high-temperature ceramic lining and a double-layer water-cooled stainless steel shell with a high-temperature thermal insulation layer, the lining is corundum or mullite, and the high-temperature thermal insulation layer is porous ceramics, ceramic fiber felt , hollow ceramic beads, graphite or graphite felt.
  • the separation method adopted by the gas-solid separator is an electrically controlled magnetic field separation method, and the magnetic field enrichment area of the gas-solid separator is composed of a bundle of a plurality of quartz tubes wound with electromagnetic coils.
  • Another object of the present invention provides a method for preparing single-walled carbon nanotubes by using the above-mentioned continuous preparation system of single-walled carbon nanotubes, characterized in that the method utilizes the high temperature generated by the DC arc flame, which is used as the counter electrode.
  • the metal catalyst evaporates to form tiny catalyst particles, which combine with the organic carbon source cracked at high temperature to catalyze the formation of single-walled carbon nanotubes, which are then cooled.
  • Single-walled carbon nanotubes with high purity, high yield and uniform structure were obtained by using a gas backflushing gas-solid separator.
  • the catalyst is sent into the crucible of the bottom electrode, the catalyst is evaporated under the action of the arc flame, and the organic carbon source mixed gas is introduced into the mixed gas inlet, and the organic carbon source mixed gas forms a spirally rising airflow and evaporates to form tiny catalyst particles Combine, start carbon nanotube growth;
  • the protective gas in the described S1) is any one of nitrogen, argon or helium or a mixed gas
  • the arc starting gas of the DC arc gun is argon or helium
  • the power of the DC arc gun is >10kW, the current is 50-600A, and the flame length of the arc is 2-50cm.
  • the catalyst in described S2) is a metal catalyst
  • the metal catalyst is any one of iron, cobalt and nickel or contains other alloy elements containing iron, cobalt and nickel.
  • the flow of the organic carbon source mixed gas in the described S2) is 1-50 liters/min;
  • the organic carbon source gas mixture includes organic carbon source gas, inert carrier gas and hydrogen;
  • the volume percentage of the organic carbon source gas is 5-40%; the volume percentage of hydrogen is 0.1-40%, and the rest are inert carrier gas;
  • the organic carbon source gas is one or more of methane, ethane, ethylene, acetylene, propylene, propane, ethanol and methanol;
  • the inert carrier gas is any one of nitrogen, argon and helium.
  • the cooling chamber in the step S3) cools the product to a temperature of ⁇ 300°C:
  • the inert gas in the step S4) is any one of nitrogen, argon or helium or a mixture thereof.
  • the high temperature arc is used as the heat source for catalyst evaporation and chemical reaction at the same time.
  • the theoretical temperature of the flame core can reach 20000 ° C, which is conducive to the growth of single-walled carbon nanotubes across a huge potential barrier, and can prepare high-quality single-walled carbon nanotubes.
  • the average Raman IG / ID ratio is much higher than that of conventional chemical vapor deposition.
  • the electromagnetic principle is used to control the separation of gas-solid particles, and the magnetic characteristics of the catalyst in the single-wall carbon nanotube product are used to adsorb on the quartz tube wall to achieve the purpose of enrichment and separation.
  • the characteristics of single-wall carbon nanotubes that are easy to adhere and agglomerate It can avoid the clogging problem caused by the traditional particle filter separation method, and further realize the circulation operation by gas backflushing;
  • FIG. 1 is a schematic diagram of a continuous preparation device for carbon nanotubes using a single collection system in the present invention.
  • FIG. 2 is a schematic diagram of a continuous carbon nanotube preparation device using bottom feeding and a single collection system in the present invention.
  • FIG. 3 is a schematic diagram of a continuous preparation device for carbon nanotubes using a dual collection system in the present invention.
  • Example 4 is a scanning electron microscope photograph of the single-walled carbon nanotubes prepared in Example 1.
  • FIG. 5 is a transmission electron microscope photograph of the single-walled carbon nanotubes prepared in Example 1.
  • FIG. 5 is a transmission electron microscope photograph of the single-walled carbon nanotubes prepared in Example 1.
  • Example 6 is a graph of the Raman spectrum of the single-walled carbon nanotubes prepared in Example 1.
  • Example 7 is a scanning electron microscope photograph of the single-walled carbon nanotubes prepared in Example 2.
  • Example 8 is a transmission electron microscope photograph of the single-walled carbon nanotubes prepared in Example 2.
  • FIG. 9 shows the Raman spectrum graph of the single-walled carbon nanotubes prepared in Example 2.
  • the present invention is a continuous preparation system for single-walled carbon nanotubes, and the carbon nanotube preparation device includes;
  • the high-temperature reaction chamber 3 is used to generate a DC arc flame to combine the evaporation of the metal catalyst used as the counter electrode with the organic carbon source of high-temperature cracking to catalyze the formation of single-walled carbon nanotubes;
  • the collecting device is used to cool the generated single-walled carbon nanotubes, separate and enrich the cooled single-walled carbon nanotubes by using a magnetic field separation method, and then collect them by gas backflushing;
  • the auxiliary unit (not shown in the figure) is used to assist the high-temperature reaction chamber and the collection device to complete the continuous preparation of single-walled carbon nanotubes;
  • the high temperature reaction chamber 3 is connected in series with the collection device, and the auxiliary units are respectively connected with the high temperature reaction chamber 3 and the collection device.
  • the auxiliary unit includes a vacuum unit, a gas circuit unit, a power supply unit and a feeding unit;
  • the bottom of the high temperature reaction chamber 3 is provided with a bottom electrode, the bottom electrode is provided with a crucible for holding catalyst, and the internal DC arc gun 4 of the high temperature reaction chamber 3 which is inserted obliquely is located vertically above the bottom electrode. ;
  • An organic carbon source mixed gas interface 1 is arranged on the side wall of the high temperature reaction chamber 3, and extends into the interior of the high temperature reaction chamber 3 along the tangent of the side wall of the high temperature reaction chamber 3; and the organic carbon source mixed gas
  • the height of the side wall of the interface 1 in the high temperature reaction chamber 3 is not higher than the height of the crucible,
  • the top of the high temperature reaction chamber 3 is opened and connected to the collection device through a pipeline, and a feeding interface 5 is provided on the top side of the high temperature reactor 3 obliquely above the bottom electrode;
  • the vacuum unit is connected with the tail gas outlet 7 of the gas-solid separator 9;
  • the gas circuit unit is respectively connected with the organic carbon source mixed gas interface 1 and the carrier gas inlet of the high temperature reaction chamber 3;
  • the power supply unit provides power
  • the feeding unit is connected with the feeding interface of the high temperature reaction chamber.
  • the number of the collection device is one or two;
  • the collecting device includes a feeding pipe 6, a cooling unit, a gas-solid separator 9 and a powder collecting tank 11;
  • one end of the feeding pipe 6 is communicated with the top of the high temperature reaction chamber, and the other end is communicated with the gas-solid separator 9 and the powder collecting tank 11 respectively through a tee, and the gas-solid separator 9
  • the gas-solid separator 9 is provided with a tail gas outlet 7 and a backflushing inlet 8, and the backflushing inlet 8 is connected to the gas circuit unit.
  • the high-temperature reaction chamber 3 includes a high-temperature ceramic lining and a double-layer water-cooled stainless steel shell with a high-temperature thermal insulation layer, the lining is corundum or mullite, and the high-temperature thermal insulation layer is porous ceramic, ceramic fiber felt, Hollow ceramic beads, graphite or graphite felt.
  • the separation method adopted by the gas-solid separator 9 is an electrically controlled magnetic field separation method, and the magnetic field enrichment area of the gas-solid separator is composed of a bundle of a plurality of quartz tubes wound with electromagnetic coils.
  • a method for preparing single-walled carbon nanotubes by using the above-mentioned continuous preparation system of single-walled carbon nanotubes Combined with organic carbon source, single-walled carbon nanotubes are catalyzed to generate single-walled carbon nanotubes, which are cooled. After cooling, the obtained single-walled carbon nanotube powders are enriched and separated by magnetic field separation method, and finally a gas backflushing gas-solid separator is used to obtain high purity. , High yield and uniform structure of single-walled carbon nanotubes.
  • the method specifically includes the following steps:
  • the catalyst is sent into the crucible of the bottom electrode, the catalyst is evaporated under the action of the arc flame, and the organic carbon source mixed gas is introduced into the mixed gas inlet, and the organic carbon source mixed gas forms a spirally rising airflow and evaporates to form tiny catalyst particles Combine, start carbon nanotube growth;
  • the protective gas in the described S1) is any one of nitrogen, argon or helium or a mixed gas
  • the arc starting gas of the DC arc gun is argon or helium
  • the power of the DC arc gun is >10kW, the current is 50-600A, and the flame length of the arc is 2-50cm.
  • the catalyst in described S2) is a metal catalyst
  • the metal catalyst is any one of iron, cobalt and nickel or contains other alloy elements containing iron, cobalt and nickel.
  • the flow of the organic carbon source mixed gas in described S2) is 1-50 liters/min;
  • the organic carbon source gas mixture includes organic carbon source gas, inert carrier gas and hydrogen;
  • the volume percentage of the organic carbon source gas is 5-40%; the volume percentage of hydrogen is 0.1-40%, and the rest are inert carrier gas;
  • the organic carbon source gas is one or more of methane, ethane, ethylene, acetylene, propylene, propane, ethanol and methanol;
  • the inert carrier gas is any one of nitrogen, argon and helium.
  • the cooling chamber in the S3) cools the product to a temperature of ⁇ 300°C:
  • the inert gas in the S4) is any one of nitrogen, argon or helium or a mixed gas.
  • the organic carbon source mixed gas interface can also be set at the bottom of the high temperature reaction chamber, which is located on one side of the bottom electrode and the crucible 2 , as shown in FIG. 2 .
  • the material of the crucible is graphite.
  • the cooling unit is a water cooler.
  • FIG. 1 The schematic diagram of the continuous preparation system of single-walled carbon nanotubes using a single collection system is shown in Figure 1. It is composed of a high-temperature reaction chamber 3, a cooling chamber 6 and a gas-solid separator 9 in series, and has valve control, and auxiliary systems include vacuum, gas Road, control, cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of corundum.
  • a bottom electrode 2 is arranged at the bottom of the high temperature reaction chamber, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode 4; the side wall of the high temperature reaction chamber is provided with organic carbon
  • the source mixed gas interface 1 ensures that the organic carbon source mixed gas forms a spiral upward airflow and evaporates to form tiny catalyst particles.
  • the gas-solid separator 9 is divided into two parts, one is the magnetic field enrichment area, the other is the powder collecting tank 11, which is connected by an intermediate valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 10kW to form a stable arc with the bottom electrode, the current is 200A, the voltage is 50V, and the electrode is gradually raised Obtain a 30cm arc flame.
  • S2) send the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and simultaneously feed the organic carbon source mixed gas through the mixed gas inlet, wherein the organic carbon source mixed gas is 45% of methane, 50% of helium and 5% of hydrogen, Start carbon nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field separator, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • S4 reaction close the outlet of the high temperature reaction chamber, open the valve of the collection tank, remove the magnetic field, use the inert gas argon to backflush the quartz tube, and blow the enriched carbon nanotube product into the collection tank to obtain the final product.
  • the schematic diagram of the continuous preparation system of single-walled carbon nanotubes using the double collection system is shown in Figure 2. It is composed of a high temperature reaction chamber 3 and a collection device in series, and is controlled by a high temperature valve 12, and the auxiliary system includes vacuum, gas circuit, control, Cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber 3 is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature heat insulation layer, and the inner wall is made of mullite.
  • a bottom electrode 12 is arranged at the bottom of the high temperature reaction chamber, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode and the crucible 2; the bottom of the high temperature reaction chamber 3 is provided with organic carbon
  • the source mixed gas interface 1 ensures that the reaction gas enters the high temperature reaction chamber from the bottom; the high temperature reactor is provided with a feeding interface 5 obliquely above to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the feeding pipe 6 and the high temperature reaction chamber 3 are respectively provided with two high temperature valves 12.
  • the two gas-solid separators 9 are divided into two parts, one part is the magnetic field enrichment area, the other part is the powder collecting tank 11, which consists of two intermediate valves 10 They are respectively connected, wherein each magnetic field enrichment zone is provided with a tail gas outlet 7 and a backflushing inlet 8 .
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 100kW to form a stable arc with the bottom electrode, the current is 500A, the voltage is 200V, and the electrode is gradually raised Obtain a 50cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is passed through the mixed gas inlet, wherein the organic carbon source mixed gas is 5% of ethylene, 85% of argon and 10% of hydrogen. Nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field gas-solid separator 9, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • close the high temperature valve 12 open the middle valve 10, and simultaneously open the electromagnetic field of the magnetic gas-solid separator 9 to continue collecting the product.
  • S5 closes the tail gas outlet 7, opens the intermediate valve 314, removes the electromagnetic field of the gas-solid separator 9, feeds argon from the backflushing inlet 8, blows the product into the powder collection tank 11, and obtains the final product.
  • two gas-solid separators 11 are used repeatedly for collection, and the feed system is used to supplement the catalyst from the feed interface 5 into the high-temperature reaction chamber to realize continuous non-stop production.
  • FIG. 1 The schematic diagram of the continuous preparation system of single-walled carbon nanotubes using a single collection system is shown in Figure 1, which is composed of a high-temperature reaction chamber 3 and a gas-solid separator 9 in series, and has valve control, and auxiliary systems include vacuum, gas path, control, Cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of corundum.
  • a bottom electrode 2 is provided at the bottom of the high temperature reaction chamber, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode 4; the bottom of the high temperature reaction chamber is provided with an organic carbon source mixed gas Interface 1 ensures that the reaction gas enters the high-temperature reaction chamber from the side wall; a feeding interface 5 is provided obliquely above the high-temperature reactor to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the gas-solid separator 9 is divided into two parts, one is the magnetic field enrichment area 9, the other is the powder collection tank 11, and the middle is connected by a valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 17.5kW, forming a stable arc with the bottom electrode, the current is 250A, the voltage is 70V, and gradually increases Electrodes get a 35 cm long arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is 30% acetylene, 55% argon and 15% hydrogen. Nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field separator, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • S4 reaction close the outlet of the high temperature reaction chamber, open the valve of the collection tank, remove the magnetic field, use the inert gas argon to backflush the quartz tube, and blow the enriched carbon nanotube product into the collection tank to obtain the final product.
  • the schematic diagram of the continuous preparation system of single-walled carbon nanotubes using the dual collection system is shown in Figure 3. It is composed of a high temperature reaction chamber 10 and two collection devices connected in series, and has valve control, and auxiliary systems include vacuum, gas path, control, Cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of mullite.
  • the bottom of the high temperature reaction chamber is provided with a bottom electrode and a crucible 2, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode and the crucible 2;
  • An organic carbon source mixed gas interface 1 is provided to ensure that the reaction gas enters the high temperature reaction chamber 3 from the side wall; a feeding interface 5 is provided obliquely above the high temperature reactor 3 to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the two feeding pipes 6 are connected with the high temperature reaction chamber 3, and the two feeding pipes 6 are respectively provided with high temperature valves 12.
  • the two gas-solid separators 9 include part of the magnetic field enrichment area and part of the powder collection tank 11, They are respectively connected by a valve 12 in the middle, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 120kW to form a stable arc with the bottom electrode, the current is 600A, the voltage is 200V, and the electrode is gradually raised Obtain a 47cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is 10% ethanol, 75% helium and 15% hydrogen, and carbon Nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field gas-solid separator 9, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • close the high temperature valve 12 open the intermediate valve 10, and simultaneously open the electromagnetic field of the magnetic gas-solid separator 9 to continue collecting the product.
  • S5 closes the tail gas outlet 7, opens the backflushing valve, removes the electromagnetic field of the gas-solid separator 9, feeds argon gas from the backflushing inlet 8, blows the product into the powder collection tank 11, and obtains the final product.
  • the gas-solid separator 11 is used repeatedly for collection, and the feed system is used to supplement the catalyst from the feed interface 15 into the high-temperature reaction chamber, so as to realize continuous non-stop production.
  • FIG. 2 The schematic diagram of the continuous preparation system of single-walled carbon nanotubes using a single collection system is shown in Figure 2. It consists of a high-temperature reaction chamber 3, a cooling chamber 6 and a gas-solid separator 9 connected in series, and has valve control, and auxiliary systems include vacuum, gas Road, control, cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of corundum.
  • a bottom electrode 2 is provided at the bottom of the high temperature reaction chamber, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode 4; the bottom of the high temperature reaction chamber is provided with an organic carbon source mixed gas
  • the interface 1 ensures that the reaction gas enters the high temperature reaction chamber from the bottom; the high temperature reactor is provided with a feeding interface 5 obliquely above to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the gas-solid separator 9 is divided into two parts, one is the magnetic field enrichment area 9, the other is the powder collection tank 11, and the middle is connected by a valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the entire system, and injects argon protective gas, then turns on the DC arc gun with a power of 48kW, forming a stable arc with the bottom electrode, the current is 400A, the voltage is 120V, and the electrode is gradually raised Obtain a 40cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time passes the organic carbon source mixed gas through the mixed gas inlet, wherein the organic carbon source mixed gas is 38% methane, 2% ethylene, 40% argon and hydrogen. 20% to start carbon nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field separator, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • S4 reaction close the high temperature reaction chamber discharge port, open the collection tank valve, remove the magnetic field, utilize the inert gas argon to backflush the quartz tube, and blow the enriched carbon nanotube product in the collection tank to obtain the final product.
  • FIG. 3 The schematic diagram of the continuous preparation system of single-walled carbon nanotubes using the double collection system is shown in Figure 3. It is composed of a high temperature reaction chamber 3 and two collection devices connected in series, with valve control, and auxiliary systems including vacuum, gas path, control, Cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of mullite.
  • a bottom electrode and a crucible 2 are arranged at the bottom of the high temperature reaction chamber, and a crucible is used to hold the catalyst, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode and the crucible 2; There is an organic carbon source mixed gas interface 1 to ensure that the reaction gas enters the high temperature reaction chamber from the bottom; a feeding interface 5 is provided obliquely above the high temperature reactor to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the two feeding pipes 6 are connected to the high temperature reaction chamber 3, and the two feeding pipes 6 are respectively provided with high temperature valves 12.
  • the two gas-solid separators 9 both include a magnetic field enrichment area, and a part is a powder collecting tank 11, respectively. It is connected by an intermediate valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 90kW to form a stable arc with the bottom electrode, the current is 500A, the voltage is 180V, and the electrode is gradually raised Obtain a 46 cm long arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is 25% propane, 55% helium and 20% hydrogen, and carbon Nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field gas-solid separator 9, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • close the high temperature valve 12 open the intermediate valve 10, and simultaneously open the electromagnetic field of the magnetic gas-solid separator 9 to continue collecting the product.
  • S5 closes the tail gas outlet 7, opens the backflushing valve, removes the electromagnetic field of the gas-solid separator 9, feeds argon gas from the backflushing inlet 8, blows the product into the powder collection tank 11, and obtains the final product.
  • the gas-solid separator 11 is used repeatedly for collection, and the feed system is used to supplement the catalyst from the feed interface 5 into the high-temperature reaction chamber to realize continuous non-stop production.
  • FIG. 1 The schematic diagram of the continuous preparation system of single-walled carbon nanotubes using a single collection system is shown in Figure 1. It is composed of a high-temperature reaction chamber 3 and a collection device in series, and has valve control, and auxiliary systems include vacuum, gas path, control, cooling and feeding system, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of corundum.
  • a bottom electrode and a crucible 2 are arranged at the bottom of the high temperature reaction chamber.
  • the crucible is used to hold the catalyst and is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber faces the bottom electrode 4; the bottom of the high temperature reaction chamber is provided with an organic carbon source mixing
  • the gas port 1 ensures that the reaction gas enters the high temperature reaction chamber from the bottom; the high temperature reactor is provided with a feeding port 5 obliquely above to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the gas-solid separator 9 is divided into two parts, one is the magnetic field enrichment area 9, the other is the powder collection tank 11, and the middle is connected by a valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 80kW to form a stable arc with the bottom electrode, the current is 450A, the voltage is 150V, and the electrode is gradually raised Obtain a 43cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is ethane 20%, propylene 5%, argon 50% and Hydrogen 25% to start carbon nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field separator, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • S4 reaction close the outlet of the high temperature reaction chamber, open the valve of the collection tank, remove the magnetic field, use the inert gas argon to backflush the quartz tube, and blow the enriched carbon nanotube product into the collection tank to obtain the final product.
  • the schematic diagram of the continuous preparation system of single-walled carbon nanotubes using the double collection system is shown in Figure 3. It consists of a high temperature reaction chamber 3 and two collection devices connected in series, and is controlled by a high temperature valve 12, and the auxiliary system includes vacuum, gas circuit, Control, cooling and feeding systems, etc.
  • the outer layer of the high-temperature reaction chamber 3 is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature heat insulation layer, and the inner wall is made of mullite.
  • the bottom of the high-temperature reaction chamber 3 is provided with a bottom electrode and a crucible 2.
  • the catalyst is contained in the crucible, which is made of graphite material; the arc gun obliquely inserted into the high-temperature reaction chamber faces the bottom electrode and the crucible 2; the sidewall of the high-temperature reaction chamber is provided with organic carbon
  • the source mixed gas interface 1 ensures that the reaction gas enters the high temperature reaction chamber 3 from the side wall in a spiral shape; the high temperature reactor is provided with a feeding interface 5 obliquely above to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the two feeding pipes 6 are connected to the high temperature reaction chamber 3 , and the two feeding pipes 6 are respectively provided with high temperature valves 12 .
  • the gas-solid separator 9 is divided into a magnetic field enrichment area, a part of which is a powder collection tank 11, which is connected by an intermediate valve 10, wherein the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, then turns on the DC arc gun with a power of 50kW to form a stable arc with the bottom electrode, the current is 400A, the voltage is 120V, and the electrode is gradually raised Obtain a 38cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is 30% acetylene, 55% argon and 15% hydrogen. Nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field gas-solid separator 9, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • the high temperature valve 210 is closed, the high temperature valve 12 is opened, and the electromagnetic field of the magnetic gas-solid separator 9 is opened at the same time to continue collecting the product.
  • S5 closes the tail gas outlet 7, opens the backflushing valve, removes the electromagnetic field of the gas-solid separator 9, feeds argon gas from the backflushing inlet 8, blows the product into the powder collection tank 11, and obtains the final product.
  • the gas-solid separator 9 is used repeatedly for collection, and the feed system is used to supplement the catalyst from the feed interface 5 into the high temperature reaction chamber, so as to realize continuous non-stop production.
  • the schematic diagram of the continuous preparation system of single-walled carbon nanotubes using the double collection system is shown in Figure 3. It is composed of a high temperature reaction chamber 3 and a collection device in series, and has valve control, and auxiliary systems include vacuum, gas path, control, cooling and feeding system, etc.
  • the outer layer of the high-temperature reaction chamber is composed of a double-layer water-cooled stainless steel shell lined with a graphite high-temperature thermal insulation layer, and the inner wall is made of mullite.
  • the side wall of the high temperature reaction chamber is provided with a bottom electrode and a crucible 2, and the catalyst is contained in the crucible, which is made of graphite material; the arc gun obliquely inserted into the high temperature reaction chamber 3 faces the bottom electrode and the crucible 2; the side wall of the high temperature reaction chamber is provided with The organic carbon source mixed gas interface 1 ensures that the reaction gas enters the high temperature reaction chamber from the bottom; the high temperature reactor is provided with a feeding interface 5 obliquely above to ensure that the catalyst fed from the upper end directly falls on the bottom electrode.
  • the feeding pipe 6 and the high temperature reaction chamber 3 are respectively provided with high temperature valves 12 .
  • the gas-solid separators 310 and 320 are divided into two parts, one is the magnetic field enrichment area, and the other is the powder collection tank 11, which is connected by an intermediate valve 11.
  • the magnetic field enrichment area is provided with a tail gas outlet 7 and a backflushing inlet 8.
  • Preparation process S1 starts the vacuum system to evacuate the air in the whole system, and injects argon protective gas, and then turns on the DC arc gun with a power of 100kW to form a stable arc with the bottom electrode, the current is 500A, the voltage is 200V, and the electrode is gradually raised Obtain a 50cm arc flame.
  • S2 sends the iron catalyst into the graphite crucible of the bottom electrode through the feeding system, and at the same time, the organic carbon source mixed gas is introduced from the mixed gas inlet, wherein the organic carbon source mixed gas is 40% methane, 2% ethylene, 3% ethanol, and argon. 40% and 15% hydrogen to start carbon nanotube growth.
  • S3 turns on the electromagnetic field of the magnetic field gas-solid separator 9, and uses the magnetic field separation technology to enrich the carbon nanotubes that have been cooled in the cooling cavity on the inner wall of the quartz tube.
  • S4 reacts for a period of time, close the high temperature valve 12, open the high temperature valve 12 on the left, and simultaneously open the electromagnetic field of the magnetic gas-solid separator 9 to continue collecting the product.
  • S5 closes the tail gas outlet 7, opens the intermediate valve 11, removes the electromagnetic field of the gas-solid separator 9, feeds argon gas from the backflushing inlet 7, and blows the product into the powder collection tank 11 to obtain the final product.
  • the S6 cycle is repeatedly collected by the gas-solid separator 11, and the catalyst is supplemented from the feeding interface 5 into the high-temperature reaction chamber by the feeding system, so as to realize continuous non-stop production.

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Abstract

提供了一种单壁碳纳米管连续制备系统及工艺方法,属于新材料技术领域。制备系统由高温反应腔(3)和冷却单元(13)串联而成,辅助以真空、气路、控制、冷却和送料系统等。制备方法利用直流电弧火焰产生的高温,将作为对电极的金属催化剂蒸发形成微小催化剂颗粒,迅速与高温裂解的有机碳源结合,催化生成单壁碳纳米管,进行冷却,冷却后进入气固分离器(9),利用磁场将所得的单壁碳纳米管富集分离,并最终采用惰性气体反吹气固分离器(9)获得最终产物。方法能够使催化剂在高温生长状态以超细颗粒存在,真正实现对单壁碳纳米管纯度、管径结构等严格调控,连续制备得到高品质单壁碳纳米管。装置及工艺的生产效率高,具有重要产业化价值。

Description

一种单壁碳纳米管的连续制备系统及制备方法 技术领域
本发明属于新材料技术领域,涉及一种纳米碳材料,特别涉及一种一种单壁碳纳米管的连续制备系统及制备方法。
背景技术
碳纳米管领域发展一直致力于如何降低缺陷含量,提高其结构完整性,朝着细管径、低缺陷、高石墨化程度方向发展,且高性能电子器件的发展进一步催生了半导体性碳材料的兴起,结构可控的单壁碳纳米管成为其终极目标。为了控制碳纳米管生长过程中催化剂的尺寸,不得不牺牲效率,将催化剂浓度降至很低以减小催化剂颗粒尺寸,并且控制生长温度以避免高温条件中的聚集长大。但与此同时,由于单壁碳纳米管管径细,表面曲率大,导致构建稳定的C-C共价结构需要更大的活化能,且高结晶化程度也有赖于高温条件。因此,高品质单壁碳纳米管制备技术核心要点即体现在需要更高的制备反应温度,同时获得持续稳定原子态的高活性催化剂,实现高效连续制备。
目前,单壁碳纳米管的制备方法主要有:化学气相沉积法、电弧烧蚀法、激光法、等离子体法等。化学气相沉积法是常用的工艺路线,由于固有的反应温度低,带来的碳纳米管结晶程度低的不足,导致化学气相沉积法制备单壁碳纳米管缺陷含量高。Li Qingwen等(Li Qingwen,Yan Hao,Cheng Yan,Zhang Jin,Liu Zhongfan,A scalable CVD synthesis of high-purity single-walled carbon nanotubes with porous MgO as support material,J.Mater.Chem.,2002,12,1179–1183)报道了一种采用氧化镁作为载体、铁作为催化剂的化学气相沉积法制备单壁碳纳米管的方法。浮动化学气相沉积法采用无载体的气态反应过程,单壁碳纳米管产物纯度和品质有明显改善。H.M.Cheng等H.M.Cheng,F.Li,X.Sun,S.D.M.Brown,M.A.Pimenta,A.Marucci,G.Dresselhaus,M.S.Dresselhaus,Bulk morphology and diameter distribution of single-walledcarbon nanotubes synthesized by catalytic decomposition ofhydrocarbons,Chemical Physics Letters 289,1998.602–610最早报道了一种以二茂铁和噻吩作为催化剂、乙醇为碳源的浮动化学气相沉积方法,可以连续从管式炉尾端飘出气凝胶状的单壁碳纳米管产物,在后续的研究中,通过提高反应温度、调整助催化剂, 单壁碳纳米管品质可以获得明显改善。中国发明专利202010326890.0公开了一种改进的浮动化学气相沉积法制备单壁碳纳米管的设备和工艺,采用立式结构,自下而上的供气反应模式,利用气流向上的自然趋势在上端可实现连续收集。中国发明专利201010234322.4公开了一种直径可控单壁碳纳米管的制备方法,采用高温电弧烧蚀的方法,将碳粉和金属催化剂填充入碳电极中,通过电弧直接烧蚀制备单壁碳纳米管。
但由于单壁碳纳米管的巨大表面积特性导致极易团聚形成膜状物质,传统的旋风分离或者过滤的方式极易导致过滤装置快速堵塞,无法连续运行。且在不影响高温反应的情况下进行稳定连续收集,依然是具有挑战性的工作。
发明内容
本发明的主要目的在于提供一种单壁碳纳米管的连续制备装置及方法,以克服现有技术中的不足。
为实现前述发明目的,本发明的技术方案是:一种单壁碳纳米管的连续制备系统,所述的碳纳米管制备装置包括;
所述高温反应腔,用于产生直流电弧焰将作为对电极的金属催化剂蒸发与高温裂解的有机碳源结合,催化生成单壁碳纳米管;
所述收集装置,用于对生成单壁碳纳米管进行冷却,并将冷却后的单壁碳纳米管利用磁场分离法进行分离富集,然后利用气体反吹收集;
所述辅助单元,用于辅助所述高温反应腔和收集装置,完成单壁碳纳米管的连续制备;
其中,所述高温反应腔与所述收集装置串联,所述辅助单元分别与所述高温反应腔与所述收集装置连接。
进一步,所述辅助单元包括真空单元、气路单元、电源单元和送料单元;
所述高温反应腔的底部设有底电极,所述底电极上设有用于盛放催化剂的坩埚,斜插入的所述高温反应腔的内部电弧枪位于所述底电极的垂直上方;
位于所述高温反应腔的侧壁上设有有机碳源混合气接口,并沿高温反应腔的侧壁切线伸入到所述高温反应腔内部;且所述有机碳源混合气接口的在所述高温反应腔的侧壁高度不高于所述坩埚的高度,
所述高温反应腔的顶部正上方开口,通过管路与所述收集装置连接,位于所 述底电极斜上方的高温反应器的顶部一侧设有送料接口;
所述真空单元与气固分离器的尾气出口连接;所述气路单元分别与高温反应腔的有机碳源混合气接口和载气入口连接;
所述电源单元提供电源;
所述送料单元与高温反应腔的送料接口连接。
进一步,所述收集装置的数量为一个或两个;
所述收集装置包括输料管、冷却单元、气固分离器和粉料收集罐;
其中,所述输料管的一端与所述高温反应腔的顶部连通,另一端通过三通分别与所述气固分离器和粉料收集罐联通,且所述气固分离器和粉料收集罐之间设有中间阀门,所述冷却单元设置在所述输料管上,使设有冷却单元的输料管内形成一个冷却腔;
所述气固分离器设有尾气出口和反吹入口,所述反吹入口与所述气路单元连接。
进一步,所述高温反应腔包括高温陶瓷的内衬和高温隔热层的双层水冷不锈钢壳体,所述内衬为刚玉或莫来石,所述高温隔热层为多孔陶瓷、陶瓷纤维毡、空心陶瓷珠、石墨或石墨毡。
进一步,所述气固分离器采用的分离方式为电控磁场分离方式,所述气固分离器的磁场富集区为多根缠绕有电磁线圈的石英管集束组成。
本发明的另一目的提供一种采用上述的单壁碳纳米管的连续制备系统制备单壁碳纳米管的方法,其特征在于,所述方法利用直流电弧焰产生的高温,将作为对电极的金属催化剂蒸发形成微小催化剂颗粒,与高温裂解的有机碳源结合,催化生成单壁碳纳米管,进行冷却,冷却后利用磁场分离法将所得的单壁碳纳米管粉体富集分离,并最终采用气体反吹气固分离器获得高纯度、高产率、结构均一的单壁碳纳米管。
进一步,具体包括以下步骤:
S1)将系统内部的空气排空,向高温反应腔并注入保护气体,并开启直流电弧枪,与底电极形成稳定的电弧,并逐步抬直流电弧枪获得指定长度电弧火焰;
S2)将催化剂送入底电极的坩埚内,催化剂在电弧火焰的作用下蒸发,同时由混合气入口通入有机碳源混合气,有机碳源混合气形成螺旋上升的气流与蒸发 形成微小催化剂颗粒结合,开始碳纳米管生长;
S3)采用磁场分离技术将被冷却过的碳纳米管富集在收集装置的内壁上;
S4)反应结束后,关闭高温反应腔的出料口,开启收集阀门,卸除磁场,利用惰性气体反吹,将富集的碳纳米管产物吹入粉料收集罐中,获得最终产物。
进一步,所述S1)中的保护气体为氮气、氩气或氦气的任意一种或者混合气;
所述直流电弧枪的起弧气体为氩气或者氦气;
所述直流电弧枪的功率>10kW,电流50-600A,电弧的火焰长度2-50cm。
进一步,所述S2)中的催化剂为金属催化剂;
所述金属催化剂为铁、钴、镍的任意一种或含有其它含铁、钴、镍的合金元素。
进一步,所述S2)中的有机碳源混合气的流量为1-50升/分钟;
所述有机碳源气体混合气包括有机碳源气体、惰性载气和氢气;
所述有机碳源气体的体积百分比为5-40%;氢气的体积百分比为0.1-40%,其余为惰性载气;
所述有机碳源气体为甲烷、乙烷、乙烯、乙炔、丙烯、丙烷、乙醇、甲醇中的一种或多种;
所述惰性载气为氮气、氩气和氦气的任意一种。
进一步,所述S3)中冷却腔将产物冷却至温度<300℃:所述S4)中惰性气体为氮气、氩气或氦气的任意一种或者混合气。
本发明的有益效果是:由于采用上述技术方案,本发明的方法的特点是:
(1)直接采用电弧高温蒸发金属催化剂,可获得超细的催化剂颗粒,且原位与裂解碳源迅速结合,避免传统化学气相沉积过程中催化剂颗粒在加热输运过程中的聚集长大,是一种维持超细颗粒尺度且高活性催化剂的有效手段,制备得到高纯度、高产率、结构均一的单壁碳纳米管;
(2)采用高温电弧同时作为催化剂蒸发和化学反应的热源,其火焰核心理论上温度可达20000℃,有利单壁碳纳米管生长跨越巨大的势垒,能够制备得到高品质单壁碳纳米管,平均拉曼I G/I D比远高于传统化学气相沉积法。
(3)采用电磁原理控制气固颗粒分离,利用单壁碳纳米管产物中催化剂的磁 性特点,吸附在石英管壁达到富集分离的目的,对于单壁碳纳米管易粘附团聚的特性,可以避免传统颗粒过滤式分离方式带来的堵塞难题,且进一步通过气体反吹的方式实现循环作业;
(4)磁性气固分离装置双系统轮换使用,可实现整套系统的连续制备和收集,高效率、操作简便,系统可靠性强;
附图说明
图1为本发明中采用单收集系统的碳纳米管连续制备装置示意图。
图2为本发明中采用底部入料和单收集系统的碳纳米管连续制备装置示意图。
图3为本发明中采用双收集系统的碳纳米管连续制备装置示意图。
图4为施实例1制备的单壁碳纳米管的扫描电子显微镜照片。
图5为施实例1制备的单壁碳纳米管的透射电子显微镜照片。
图6为施实例1制备的单壁碳纳米管的拉曼光谱曲线图。
图7为施实例2制备的单壁碳纳米管的扫描电子显微镜照片。
图8为施实例2制备的单壁碳纳米管的透射电子显微镜照片。
图9施实例2制备的单壁碳纳米管的拉曼光谱曲线图。
图中:
1.有机碳源混合气入口;2.底电极和坩埚;3.高温反应腔;4.直流电弧枪;5.送料接口;6.输料管;7.尾气出口;8.反吹入口;9.气固分离器;10.中间阀门;11.粉料收集罐,12.高温阀门;13.冷却单元。
具体实施方式
下面结合附图和具体实施例对本发明的技术方案做进一步说明。
如图1所示,本发明一种单壁碳纳米管的连续制备系统,所述的碳纳米管制备装置包括;
所述高温反应腔3,用于产生直流电弧焰将作为对电极的金属催化剂蒸发与高温裂解的有机碳源结合,催化生成单壁碳纳米管;
所述收集装置,用于对生成单壁碳纳米管进行冷却,并将冷却后的单壁碳纳米管利用磁场分离法进行分离富集,然后利用气体反吹收集;
所述辅助单元(图上未显示),用于辅助所述高温反应腔、收集装置,完成单壁碳纳米管的连续制备;
其中,所述高温反应腔3与所述收集装置串联,所述辅助单元分别与所述高温反应腔3与所述收集装置连接。
所述辅助单元包括真空单元、气路单元、电源单元和送料单元;
所述高温反应腔3的底部设有底电极,所述底电极上设有用于盛放催化剂的坩埚,斜插入的所述高温反应腔3的内部直流电弧枪4位于所述底电极的垂直上方;
位于所述高温反应腔3的侧壁上设有有机碳源混合气接口1,并沿高温反应腔3的侧壁切线伸入到所述高温反应腔3内部;且所述有机碳源混合气接口1的在所述高温反应腔3的侧壁高度不高于所述坩埚的高度,
所述高温反应腔3的顶部正上方开口,通过管路与所述收集装置连接,位于所述底电极斜上方的高温反应器3的顶部一侧设有送料接口5;
所述真空单元与气固分离器9的尾气出口7连接;所述气路单元分别与高温反应腔3的有机碳源混合气接口1和载气入口连接;
所述电源单元提供电源;
所述送料单元与高温反应腔的送料接口连接。
所述收集装置的数量为一个或两个;
所述收集装置包括输料管6、冷却单元、气固分离器9和粉料收集罐11;
其中,所述输料管6的一端与所述高温反应腔的顶部连通,另一端通过三通分别与所述气固分离器9和粉料收集罐11联通,且所述气固分离器9和粉料收集罐11之间设有中间阀门10,所述冷却单元13设置在所述输料管6上,使设有冷却单元的输料管6内形成一个冷却腔;
所述气固分离器9设有尾气出口7和反吹入口8,所述反吹入口8与所述气路单元连接。
所述高温反应腔3包括高温陶瓷的内衬和高温隔热层的双层水冷不锈钢壳体,所述内衬为刚玉或莫来石,所述高温隔热层为多孔陶瓷、陶瓷纤维毡、空心陶瓷珠、石墨或石墨毡。
所述气固分离器9采用的分离方式为电控磁场分离方式,所述气固分离器的磁场富集区为多根缠绕有电磁线圈的石英管集束组成。
一种采用上述的单壁碳纳米管的连续制备系统制备单壁碳纳米管的方法,所 述方法利用直流电弧火焰产生的高温,将作为对电极的金属催化剂蒸发形成微小催化剂颗粒,与高温裂解的有机碳源结合,催化生成单壁碳纳米管,进行冷却,冷却后利用磁场分离法将所得的单壁碳纳米管粉体富集分离,并最终采用气体反吹气固分离器获得高纯度、高产率、结构均一的单壁碳纳米管。
所述方法的具体包括以下步骤:
S1)将系统内部的空气排空,向高温反应腔并注入保护气体,并开启直流电弧枪,与底电极形成稳定的电弧,并逐步抬直流电弧枪获得指定长度电弧火焰;
S2)将催化剂送入底电极的坩埚内,催化剂在电弧火焰的作用下蒸发,同时由混合气入口通入有机碳源混合气,有机碳源混合气形成螺旋上升的气流与蒸发形成微小催化剂颗粒结合,开始碳纳米管生长;
S3)采用磁场分离技术将被冷却过的碳纳米管富集在收集装置的内壁上;
S4)反应结束后,关闭高温反应腔的出料口,开启收集阀门,卸除磁场,利用惰性气体反吹,将富集的碳纳米管产物吹入粉料收集罐中,获得最终产物。
进一步,所述S1)中的保护气体为氮气、氩气或氦气的任意一种或者混合气;
所述直流电弧枪的起弧气体为氩气或者氦气;
所述直流电弧枪的功率>10kW,电流50-600A,电弧的火焰长度2-50cm。
进一步,所述S2)中的催化剂为金属催化剂;
所述金属催化剂为铁、钴、镍的任意一种或含有其它含铁、钴、镍的合金元素。
所述S2)中的有机碳源混合气的流量为1-50升/分钟;
所述有机碳源气体混合气包括有机碳源气体、惰性载气和氢气;
所述有机碳源气体的体积百分比为5-40%;氢气的体积百分比为0.1-40%,其余为惰性载气;
所述有机碳源气体为甲烷、乙烷、乙烯、乙炔、丙烯、丙烷、乙醇、甲醇中的一种或多种;
所述惰性载气为氮气、氩气和氦气的任意一种。
所述S3)中冷却腔将产物冷却至温度<300℃:所述S4)中惰性气体为氮气、氩气或氦气的任意一种或者混合气。
所述有机碳源混合气接口还可设置所述高温反应腔的底部,位于所述底电极和坩埚2的一侧,如图2所示。
所述坩埚的材质为石墨。
所述冷却单元为水冷器。
实施例1
采用单收集系统的单壁碳纳米管连续制备系统示意图如图1所示,由高温反应腔3、冷却腔6和气固分离器9串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为刚玉材质。高温反应腔底部设有底电极2,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极4;高温反应腔的侧壁上设有有机碳源混合气接口1,保证有机碳源混合气形成螺旋上升的气流与蒸发形成微小催化剂颗粒结合;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。气固分离器9分成两部分,一部分是磁场富集区,一部分是粉料收集罐11,由中间阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率10kW,与底电极形成稳定的电弧,电流200A,电压50V,并逐步抬高电极获得30厘米长电弧火焰。S2)通过送料系统将铁催化剂送入底电极的石墨坩埚内,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为甲烷45%、氦气50%和氢气5%,开始碳纳米管生长。S3开启磁场分离器的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应结束后,关闭高温反应腔出料口,开启收集罐阀门,卸除磁场,利用惰性气体氩气反吹石英管,将富集的碳纳米管产物吹如收集罐中,获得最终产物。
产物表征:所得产物扫描电子显微镜照片如图3所示,产物纯净,管束细长且直;透射电子显微镜照片如图4所示,从游离的单根碳纳米管可以看出,产物为单壁碳纳米管;拉曼光谱曲线图如图5所示,激发波长532nm,产物具有明显的RBM峰(径向呼吸震动峰),且具有较高的G/D比值,I G/I D=52。
实施例2
采用双收集系统的单壁碳纳米管连续制备系统示意图如图2所示,由高温反应腔3和收集装置串联而成,并有高温阀门12控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔3外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为莫来石材质。高温反应腔底部设有底电极12,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极和坩埚2;高温反应腔3底部设有有机碳源混合气接口1,保证反应气体从底部进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。输料管6与高温反应腔3分别设置有2个高温阀门12。2个气固分离器9分成两部分,一部分是磁场富集区,一部分是粉料收集罐11,由2个中间阀门10分别连接,其中每个磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率100kW,与底电极形成稳定的电弧,电流500A,电压200V,并逐步抬高电极获得50厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为乙烯5%、氩气85%和氢气10%,开始碳纳米管生长。S3开启磁场气固分离器9的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应一段时间后,关闭高温阀门12,开启中阀门10,同时开启磁场气固分离器9的电磁场继续收集产物。S5关闭尾气出口7,开启中间阀门314,卸除气固分离器9的电磁场,从反吹入口8通入氩气,将产物吹入粉料收集罐11,获得最终产物。S6循环反复利用2个气固分离器11进行收集,并利用送料系统将催化剂从送料接口5补充进入高温反应腔,实现连续不停机生产。
产物表征:所得产物扫描电子显微镜照片如图6示,产物纯净,管束细长且直;透射电子显微镜照片如图7所示,从游离的单根碳纳米管可以看出,产物为单壁碳纳米管;拉曼光谱曲线图如图8所示,激发波长532nm,产物具有明显的RBM(峰径向呼吸震动峰),且具有较高的G/D比值,I G/I D=61。
实施例3
采用单收集系统的单壁碳纳米管连续制备系统示意图如图1所示,由高温反应腔3和气固分离器9串联而成,并有阀门控制,以及辅助系统包括真空、气路、 控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为刚玉材质。高温反应腔底部设有底电极2,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极4;高温反应腔底部设有有机碳源混合气接口1,保证反应气体从侧壁进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。气固分离器9分成两部分,一部分是磁场富集区9,一部分是粉料收集罐11,中间由阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率17.5kW,与底电极形成稳定的电弧,电流250A,电压70V,并逐步抬高电极获得35厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为乙炔30%、氩气55%和氢气15%,开始碳纳米管生长。S3开启磁场分离器的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应结束后,关闭高温反应腔出料口,开启收集罐阀门,卸除磁场,利用惰性气体氩气反吹石英管,将富集的碳纳米管产物吹如收集罐中,获得最终产物。
实施例4
采用双收集系统的单壁碳纳米管连续制备系统示意图如图3所示,由高温反应腔10和2套收集装置串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为莫来石材质。高温反应腔底部设有底电极和坩埚2,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极和坩埚2;高温反应腔3侧壁上设有有机碳源混合气接口1,保证反应气体从侧壁进入高温反应腔3;高温反应器3斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。2个输料管6与高温反应腔3连接,且2个输料管6分别设置有高温阀门12。2个气固分离器9包括一部分是磁场富集区,一部分是粉料收集罐11,分别由中间由阀门12连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气 体,随后开启直流电弧枪功率120kW,与底电极形成稳定的电弧,电流600A,电压200V,并逐步抬高电极获得47厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为乙醇10%、氦气75%和氢气15%,开始碳纳米管生长。S3开启磁场气固分离器9的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应一段时间后,关闭高温阀门12,开启中间阀门10,同时开启磁场气固分离器9的电磁场继续收集产物。S5关闭尾气出口7,开启反吹阀门,卸除气固分离器9的电磁场,从反吹入口8通入氩气,将产物吹入粉料收集罐11,获得最终产物。S6循环反复利用气固分离器11进行收集,并利用送料系统将催化剂从送料接口15补充进入高温反应腔,实现连续不停机生产。
实施例5
采用单收集系统的单壁碳纳米管连续制备系统示意图如图2所示,由高温反应腔3、冷却腔6和气固分离器9串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为刚玉材质。高温反应腔底部设有底电极2,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极4;高温反应腔底部设有有机碳源混合气接口1,保证反应气体从底部进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。气固分离器9分成两部分,一部分是磁场富集区9,一部分是粉料收集罐11,中间由阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率48kW,与底电极形成稳定的电弧,电流400A,电压120V,并逐步抬高电极获得40厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为甲烷38%、乙稀2%、氩气40%和氢气20%,开始碳纳米管生长。S3开启磁场分离器的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应结束后,关闭高温反应腔出料口,开启收集罐阀门,卸除磁场,利用惰性气体氩气反吹石英管,将富集的碳纳米管产物吹如收集 罐中,获得最终产物。
实施例6
采用双收集系统的单壁碳纳米管连续制备系统示意图如图3所示,由高温反应腔3和2个收集装置串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为莫来石材质。高温反应腔底部设有底电极和坩埚2,并有坩埚用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极和坩埚2;高温反应腔侧壁上设有有机碳源混合气接口1,保证反应气体从底部进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。2个输料管6与高温反应腔3连接,且2个输料管6分别设置有高温阀门12。2个气固分离器9均包括磁场富集区,一部分是粉料收集罐11,分别由中间阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率90kW,与底电极形成稳定的电弧,电流500A,电压180V,并逐步抬高电极获得46厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为丙烷25%、氦气55%和氢气20%,开始碳纳米管生长。S3开启磁场气固分离器9的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应一段时间后,关闭高温阀门12,开启中间阀门10,同时开启磁场气固分离器9的电磁场继续收集产物。S5关闭尾气出口7,开启反吹阀门,卸除气固分离器9的电磁场,从反吹入口8通入氩气,将产物吹入粉料收集罐11,获得最终产物。S6循环反复利用气固分离器11进行收集,并利用送料系统将催化剂从送料接口5补充进入高温反应腔,实现连续不停机生产。
实施例7
采用单收集系统的单壁碳纳米管连续制备系统示意图如图1所示,由高温反应腔3和收集装置串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为刚玉材质。高温反应腔底部设有底电极和坩埚2,坩埚内用于盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极 4;高温反应腔底部设有有机碳源混合气接口1,保证反应气体从底部进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。气固分离器9分成两部分,一部分是磁场富集区9,一部分是粉料收集罐11,中间由阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率80kW,与底电极形成稳定的电弧,电流450A,电压150V,并逐步抬高电极获得43厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为乙烷20%、丙稀5%、氩气50%和氢气25%,开始碳纳米管生长。S3开启磁场分离器的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应结束后,关闭高温反应腔出料口,开启收集罐阀门,卸除磁场,利用惰性气体氩气反吹石英管,将富集的碳纳米管产物吹如收集罐中,获得最终产物。
实施例8
采用双收集系统的单壁碳纳米管连续制备系统示意图如图3所示,由高温反应腔3和2个收集装置串联而成,并有高温阀门12控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔3外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为莫来石材质。高温反应腔3底部设有底电极和坩埚2,坩埚内盛放催化剂,材质为石墨材料;斜插入高温反应腔的电弧枪正对着底电极和坩埚2;高温反应腔侧壁设有有机碳源混合气接口1,保证反应气体从侧壁以螺旋状进入高温反应腔3;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。2个输料管6与高温反应腔3连接,且2个输料管6分别设置有高温阀门12。气固分离器9分成磁场富集区,一部分是粉料收集罐11,由中间阀门10连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率50kW,与底电极形成稳定的电弧,电流400A,电压120V,并逐步抬高电极获得38厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机 碳源混合气为乙炔30%、氩气55%和氢气15%,开始碳纳米管生长。S3开启磁场气固分离器9的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应一段时间后,关闭210高温阀门,开启高温阀门12,同时开启磁场气固分离器9的电磁场继续收集产物。S5关闭尾气出口7,开启反吹阀门,卸除气固分离器9的电磁场,从反吹入口8通入氩气,将产物吹入粉料收集罐11,获得最终产物。S6循环反复利用气固分离器9进行收集,并利用送料系统将催化剂从送料接口5补充进入高温反应腔,实现连续不停机生产。
实施例9
采用双收集系统的单壁碳纳米管连续制备系统示意图如图3所示,由高温反应腔3、收集装置串联而成,并有阀门控制,以及辅助系统包括真空、气路、控制、冷却和送料系统等。其中高温反应腔外层由内衬石墨高温隔热层的双层水冷不锈钢壳体组成,内壁为莫来石材质。高温反应腔的侧壁设有底电极和坩埚2,坩埚内盛放催化剂,材质为石墨材料;斜插入高温反应腔3的电弧枪正对着底电极和坩埚2;高温反应腔侧壁设有有机碳源混合气接口1,保证反应气体从底部进入高温反应腔;高温反应器斜上方设有送料接口5,保证从上端送入催化剂直接落在底电极上。输料管6与高温反应腔3分别设置有高温阀门12。气固分离器310、320分成两部分,一部分是磁场富集区,一部分是粉料收集罐11,由中间阀门11连接,其中磁场富集区设有尾气出口7和反吹入口8。
制备工艺:S1启动真空系统将整个系统中的空气排空,并注入氩气保护气体,随后开启直流电弧枪功率100kW,与底电极形成稳定的电弧,电流500A,电压200V,并逐步抬高电极获得50厘米长电弧火焰。S2通过送料系统将铁催化剂送入底电极的石墨坩埚,同时由混合气入口通入有机碳源混合气,其中有机碳源混合气为甲烷40%、乙稀2%、乙醇3%、氩气40%和氢气15%,开始碳纳米管生长。S3开启磁场气固分离器9的电磁场,采用磁场分离技术将已经过冷却腔冷却的碳纳米管富集在石英管内壁。S4反应一段时间后,关闭高温阀门12,开启左边的高温阀门12,同时开启磁场气固分离器9的电磁场继续收集产物。S5关闭尾气出口7,开启中间阀门11,卸除气固分离器9的电磁场,从反吹入口7通入氩气,将产物吹入粉料收集罐11,获得最终产物。S6循环反复利用气固分离器11进行收集,并利用送料系统将催化剂从送料接口5补充进入高温反 应腔,实现连续不停机生产。
以上内容仅为说明本发明的技术思想,不能以此限定本发明的保护范围,凡是按照本发明提出的技术思想,在技术方案基础上所做的任何改动,均落入本发明权利要求书的保护范围之内。

Claims (10)

  1. 一种单壁碳纳米管的连续制备系统,其特征在于,所述的碳纳米管制备装置包括;
    所述高温反应腔,用于产生直流电弧焰将作为对电极的金属催化剂蒸发与高温裂解的有机碳源结合,催化生成单壁碳纳米管;
    所述收集装置,用于对生成单壁碳纳米管进行冷却,并将冷却后的单壁碳纳米管利用磁场分离法进行分离富集,然后利用气体反吹收集;
    所述辅助单元,用于辅助所述高温反应腔和收集装置,完成单壁碳纳米管的连续制备;
    其中,所述高温反应腔与所述收集装置串联,所述辅助单元分别与所述高温反应腔与所述收集装置连接。
  2. 根据权利要求1所述的单壁碳纳米管的连续制备系统,其特征在于,
    所述辅助单元包括真空单元、气路单元、电源单元和送料单元;
    所述高温反应腔的底部设有底电极,所述底电极上设有用于盛放催化剂的坩埚,斜插入的所述高温反应腔的内部电弧枪位于所述底电极的垂直上方;
    位于所述高温反应腔的侧壁上设有有机碳源混合气接口,并沿高温反应腔的侧壁切线伸入到所述高温反应腔的内部;且所述有机碳源混合气接口的在所述高温反应腔的侧壁高度不高于所述坩埚的高度,
    所述高温反应腔的顶部正上方开口,通过管路与所述收集装置连接,位于所述底电极斜上方的高温反应器的顶部一侧设有送料接口;
    所述真空单元与气固分离器的尾气出口连接;所述气路单元分别与高温反应腔的有机碳源混合气接口和载气入口连接;
    所述电源单元提供电源;
    所述送料单元与高温反应腔的送料接口连接。
  3. 根据权利要求2所述的单壁碳纳米管的连续制备系统,其特征在于,所述收集装置的数量为一个或两个;
    所述收集装置包括输料管、冷却单元、气固分离器和粉料收集罐;
    其中,所述输料管的一端与所述高温反应腔的顶部连通,另一端通过三通分别与所述气固分离器和粉料收集罐联通,且所述气固分离器和粉料收集罐之间设有中间阀门,所述冷却单元设置在所述输料管上,使设有冷却单元的输料管内形 成一个冷却腔;
    所述气固分离器设有尾气出口和反吹入口,所述反吹入口与所述气路单元连接。
  4. 根据权利要求2所述的单壁碳纳米管的连续制备系统,其特征在于,所述高温反应腔包括高温陶瓷的内衬和高温隔热层的双层水冷不锈钢壳体,所述内衬为刚玉或莫来石,所述高温隔热层为多孔陶瓷、陶瓷纤维毡、空心陶瓷珠、石墨或石墨毡。
  5. 根据权利要求3所述的单壁碳纳米管的连续制备系统,其特征在于,所述气固分离器采用的分离方式为电控磁场分离方式,所述气固分离器的磁场富集区为多根缠绕有电磁线圈的石英管集束组成。
  6. 一种采用如权利要求1-5任意一项所述的单壁碳纳米管的连续制备系统制备单壁碳纳米管的方法,其特征在于,所述方法利用直流电弧焰产生的高温,将作为对电极的金属催化剂蒸发形成微小催化剂颗粒,与高温裂解的有机碳源结合,催化生成单壁碳纳米管,进行冷却,冷却后利用磁场分离法将所得的单壁碳纳米管粉体富集分离,并最终采用气体反吹气固分离器获得高纯度、高产率、结构均一的单壁碳纳米管。
  7. 根据权利要求5所述的单壁碳纳米管连续制备系统,其特征在于,具体包括以下步骤:
    S1)将系统内部的空气排空,向高温反应腔并注入保护气体,并开启直流电弧枪,与底电极形成稳定的电弧,并逐步抬直流电弧枪获得指定长度电弧火焰;
    S2)将催化剂送入底电极的坩埚内,催化剂在电弧火焰的作用下蒸发,同时由混合气入口通入有机碳源混合气,有机碳源混合气形成螺旋上升的气流与蒸发形成微小催化剂颗粒结合,开始碳纳米管生长;
    S3)采用磁场分离技术将被冷却过的碳纳米管富集在收集装置的内壁上;
    S4)反应结束后,关闭高温反应腔的出料口,开启收集阀门,卸除磁场,利用惰性气体反吹,将富集的碳纳米管产物吹入粉料收集罐中,获得最终产物。
  8. 根据权利要求7所述的方法,其特征在于,所述S1)中的保护气体为氮气、氩气或氦气的任意一种或者混合气;
    所述直流电弧枪的起弧气体为氩气或者氦气;
    所述直流电弧枪的功率>10kW,电流50-600A,电弧的火焰长度2-50cm。
  9. 根据权利要求7所述的方法,其特征在于,所述S2)中的催化剂为金属催化剂;
    所述金属催化剂为铁、钴、镍的任意一种或含有其它含铁、钴、镍的合金元素;
    所述S2)中的有机碳源混合气的流量为1-50升/分钟;
    所述有机碳源气体混合气包括有机碳源气体、惰性载气和氢气;
    所述有机碳源气体的体积百分比为5-40%;氢气的体积百分比为0.1-40%,其余为惰性载气;
    所述有机碳源气体为甲烷、乙烷、乙烯、乙炔、丙烯、丙烷、乙醇、甲醇中的一种或多种;
    所述惰性载气为氮气、氩气和氦气的任意一种。
  10. 根据权利要求7所述的方法,其特征在于,所述S3)中冷却腔将产物冷却至温度<300℃:所述S4)中惰性气体为氮气、氩气或氦气的任意一种或者混合气。
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