WO2022061939A1 - 有机电致发光器件和显示装置 - Google Patents

有机电致发光器件和显示装置 Download PDF

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Publication number
WO2022061939A1
WO2022061939A1 PCT/CN2020/118588 CN2020118588W WO2022061939A1 WO 2022061939 A1 WO2022061939 A1 WO 2022061939A1 CN 2020118588 W CN2020118588 W CN 2020118588W WO 2022061939 A1 WO2022061939 A1 WO 2022061939A1
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Prior art keywords
hole injection
injection layer
layer
substituted
unsubstituted
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PCT/CN2020/118588
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English (en)
French (fr)
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许美善
孙海雁
王丹
李昌浩
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京东方科技集团股份有限公司
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Priority to PCT/CN2020/118588 priority Critical patent/WO2022061939A1/zh
Priority to CN202080002142.5A priority patent/CN114586187A/zh
Priority to US17/419,307 priority patent/US20220310955A1/en
Publication of WO2022061939A1 publication Critical patent/WO2022061939A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • C09K11/07—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials having chemically interreactive components, e.g. reactive chemiluminescent compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Definitions

  • the present disclosure relates to, but is not limited to, the field of display technology, and in particular, to an organic electroluminescence device and a display device.
  • OLED Organic Light Emitting Device
  • OLED is an active light-emitting device, which has the advantages of light emission, ultra-thin, wide viewing angle, high brightness, high contrast, low power consumption, and extremely high response speed. Promising next-generation display technology.
  • OLED includes an anode, a cathode, and a light-emitting layer arranged between the anode and the cathode.
  • the light-emitting principle is to inject holes and electrons into the light-emitting layer from the anode and the cathode, respectively.
  • the electrons and holes meet in the light-emitting layer, the electrons and The holes recombine to generate excitons, which emit light while transitioning from an excited state to a ground state.
  • a hole injection layer and a hole transport layer are arranged between the anode and the light-emitting layer, and an electron injection layer is arranged between the cathode and the light-emitting layer. layer and electron transport layer.
  • the design of the hole injection layer is more important.
  • An organic electroluminescence device comprising an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, and a first hole injection layer and a second hole injection layer are disposed between the anode and the light-emitting layer,
  • the first hole injection layer is arranged between the anode and the second hole injection layer;
  • the first hole injection layer includes aromatic amine compounds, quinone derivatives, ketone derivatives, and fluorenone derivatives and at least one of dioxaborolane and derivatives thereof
  • the second hole injection layer includes aromatic amine compounds, quinone derivatives, ketone derivatives, fluorenone derivatives and dioxane At least one of oxaborole and derivatives thereof;
  • the structures of the first hole injection layer and the second hole injection layer are different, and the different structures include any one or more of the following: the thicknesses of the first hole injection layer and the second hole injection layer are different , the material structures of the first hole injection layer and the second hole injection layer are different, the number of materials of the first hole injection layer and the second hole injection layer are different, and the first hole injection layer The material energy levels of the layer and the second hole injection layer are different;
  • the material structure includes a chemical formula of the material, the number of materials includes the number of species of the material, and the material energy level includes the highest occupied molecular orbital HOMO energy level of the material and the lowest unoccupied molecular orbital LUMO energy level of the material.
  • the first hole injection layer and the second hole injection layer do not contain more than three kinds of materials.
  • the second hole injection layer includes a second host material and a guest material doped in the second host material, one of the second host material and the guest material including Aromatic amine compounds, another one includes quinone derivatives, ketone derivatives, fluorenone derivatives or dioxaborolane and derivatives thereof, and the second host material and guest material satisfy:
  • LUMO(B) is the lowest unoccupied molecular orbital LUMO energy level of the guest material
  • HOMO(A2) is the highest occupied molecular orbital HOMO energy level of the second host material.
  • the guest material also satisfies:
  • HOMO(B) is the highest occupied molecular orbital HOMO level of the guest material.
  • the second host material also satisfies:
  • the doping ratio of the guest material to the second hole injection layer is 1% to 35%.
  • the first hole injection layer includes a first host material that is the same as the guest material.
  • the thickness of the first hole injection layer is 1 nm to 3 nm, and the thickness of the second hole injection layer is 1 nm to 8 nm.
  • the substituent group of the aromatic amine compound includes carbazole, methylfluorene, spirofluorene, dibenzothiophene or furan.
  • the second host material includes, but is not limited to, a compound having the structure of formula (I):
  • Ar 1 to Ar 4 are each independently a substituted or unsubstituted aryl group having 5 to 50 ring atoms, and L is a substituted or unsubstituted arylene group having 5 to 50 ring atoms
  • the connecting group formed, or the connecting group obtained by connecting a plurality of substituted or unsubstituted arylene groups with 5 to 50 ring atoms and M1, M1 is any one of the following: single bond, oxygen atom, Sulfur atom, nitrogen atom, saturated or unsaturated divalent aliphatic hydrocarbon group having 1 to 20 carbon atoms.
  • At least one of Ar 1 to Ar 4 is selected from any one of the following structures:
  • R1 to R25 are each independently any one of the following: a hydrogen atom, an aryl group having 5 to 50 ring atoms, a substituted or unsubstituted alkyl group having 1 to 50 carbon atoms, a substituted or unsubstituted alkyl group having Alkoxy of 1 to 50 carbon atoms, substituted or unsubstituted aralkyl of 6 to 50 ring atoms, substituted or unsubstituted aryloxy of 5 to 50 ring atoms, substituted or unsubstituted Arylthio group with 5 to 50 ring atoms, substituted or unsubstituted alkoxycarbonyl group with 1 to 50 carbon atoms, aryl group with 5 to 50 ring atoms substituted by M2, where M2 is amino, halogen atom , cyano, nitro, hydroxyl or carboxyl.
  • the guest material includes, but is not limited to, a compound having the structure of formula (II):
  • Z is a substituted or unsubstituted benzene ring, pyridine ring, thiophene ring, quinoline, indole or thienothiophene ring;
  • Ar 5 is Ar 6 is Ar
  • Y1 to Y4 are each independently N or C - R35;
  • R31 to R35 are each independently selected from any one of the following: hydrogen, deuterium, halogen group, nitrile group, substituted or unsubstituted alkyl, substituted or unsubstituted haloalkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted haloalkoxy, substituted or unsubstituted aryl, substituted or unsubstituted haloaryl, substituted or unsubstituted silyl, substituted or unsubstituted heterocycles;
  • X1 and X2 are each independently selected from any one of the following structures:
  • R41 to R43 are each independently any one of the following: hydrogen, fluoroalkyl, alkyl, aryl and heterocyclic, and R42 and R43 form a ring.
  • At least one organic layer is further disposed between the second hole injection layer and the light emitting layer, and the carrier mobility in the at least one organic layer is 10 -3 cm 2 / Vs to 10 ⁇ 5 cm 2 /Vs, and/or, the electrical conductivity of the at least one organic layer is less than or equal to the electrical conductivity of the first hole injection layer and the second hole injection layer.
  • the material of the at least one organic layer is the same as the second host material.
  • the material of the at least one organic layer satisfies:
  • HOMO(D) is the highest occupied molecular orbital HOMO level of the hole transport layer.
  • two organic layers are further disposed between the second hole injection layer and the light emitting layer, and the carrier mobility in the two organic layers is both 10 -3 cm 2 /Vs to 10 ⁇ 5 cm 2 /Vs, and/or, the electrical conductivity of the two organic layers is less than or equal to the electrical conductivity of the first hole injection layer and the second hole injection layer.
  • a display device includes the aforementioned organic electroluminescence device.
  • the display device includes a substrate and a plurality of sub-pixels formed on the substrate, the sub-pixels including the organic electroluminescent device; the first hole injection layer and the second hole
  • the area of the hole injection layer is approximately equal, and the orthographic projections of the first hole injection layer and the second hole injection layer on the substrate overlap with the orthographic projections of the light-emitting regions of at least two sub-pixels on the substrate.
  • the areas of the first hole injection layer and the second hole injection layer are both larger than the area of the light emitting layer.
  • the sub-pixel further includes a pixel driving circuit, and the orthographic projection of the light emitting layer of at least part of the sub-pixel on the substrate overlaps the orthographic projection of the driving transistor of the pixel driving circuit on the substrate.
  • FIG. 1 is a schematic structural diagram of an OLED display device
  • FIG. 2 is a schematic plan view of a display area of a display substrate
  • FIG. 3 is a schematic cross-sectional structure diagram of a display substrate
  • FIG. 5 is a schematic diagram of an OLED structure according to an exemplary embodiment of the present disclosure.
  • Fig. 6 is an efficiency comparison result of different hole injection layer structures in OLED
  • FIG. 7 is a life comparison result of different hole injection layer structures in OLED
  • Fig. 8 is another efficiency comparison result of different hole injection layer structures in OLED
  • FIG. 9 is another lifetime comparison result of different hole injection layer structures in OLEDs.
  • FIG. 10 is yet another lifetime comparison result of different hole injection layer structures in OLEDs.
  • 50 light-emitting layer
  • 60 hole blocking layer
  • 70 electron transport layer
  • 80 electron injection layer
  • 90 cathode
  • 101 substrate
  • 102 drive circuit layer
  • 103 light emitting device
  • 104 encapsulation layer
  • 201 the first insulating layer
  • 202 the second insulating layer
  • 203 the third insulating layer
  • 204 the fourth insulating layer
  • 205 flat layer
  • 210 drive transistor
  • 211 storage capacitor
  • 301 anode
  • 302 pixel definition layer
  • 303 organic light-emitting layer
  • 304 cathode
  • 401 first encapsulation layer
  • 402 the second encapsulation layer
  • 403 the third encapsulation layer.
  • the terms “installed”, “connected” and “connected” should be construed broadly unless otherwise expressly specified and limited. For example, it may be a fixed connection, or a detachable connection, or an integral connection; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate piece, or an internal communication between two elements.
  • installed may be a fixed connection, or a detachable connection, or an integral connection; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate piece, or an internal communication between two elements.
  • a transistor refers to an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode.
  • the transistor has a channel region between the drain electrode (or drain electrode terminal, drain region or drain electrode) and the source electrode (or source electrode terminal, source region or source electrode), and current can flow through the drain electrode, channel region and source electrode.
  • the channel region refers to a region through which current mainly flows.
  • the first electrode may be the drain electrode and the second electrode may be the source electrode, or the first electrode may be the source electrode and the second electrode may be the drain electrode.
  • the functions of the "source electrode” and the “drain electrode” may be interchanged. Therefore, herein, “source electrode” and “drain electrode” may be interchanged with each other.
  • electrically connected includes the case where constituent elements are connected together by means of elements having some electrical function.
  • the "element having a certain electrical effect” is not particularly limited as long as it can transmit and receive electrical signals between the connected constituent elements.
  • the “element having a certain electrical effect” may be, for example, electrodes or wirings, or switching elements such as transistors, or other functional elements such as resistors, inductors, and capacitors.
  • parallel refers to a state where the angle formed by two straight lines is -10° or more and 10° or less, and therefore, also includes a state where the angle is -5° or more and 5° or less.
  • perpendicular refers to the state where the angle formed by two straight lines is 80° or more and 100° or less, and therefore includes the state where the angle is 85° or more and 95° or less.
  • film and “layer” are interchangeable.
  • conductive layer may be replaced by “conductive film” in some cases.
  • insulating film may be replaced with “insulating layer” in some cases.
  • FIG. 1 is a schematic structural diagram of an OLED display device.
  • the OLED display device may include a scan signal driver, a data signal driver, a lighting signal driver, an OLED display substrate, a first power supply unit, a second power supply unit and an initial power supply unit.
  • the OLED display substrate includes at least a plurality of scan signal lines (S1 to SN), a plurality of data signal lines (D1 to DM), and a plurality of light emission signal lines (EM1 to EMN), and the scan signal driver is configured
  • the data signal driver is configured to supply the data signals to the plurality of data signal lines (D1 to DM)
  • the light emission signal driver is configured to sequentially supply the plurality of light emission signals Lines (EM1 to EMN) provide lighting control signals.
  • the plurality of scan signal lines and the plurality of light emitting signal lines extend in the horizontal direction
  • the plurality of data signal lines extend in the vertical direction.
  • the display device includes a plurality of sub-pixels, and one sub-pixel is connected to, for example, a scanning signal line, a light-emitting control line and a data signal line.
  • the first power supply unit, the second power supply unit and the initial power supply unit are respectively configured to supply the first power supply voltage, the second power supply voltage and the initial power supply voltage to the pixel circuit through the first power supply line, the second power supply line and the initial signal line.
  • FIG. 2 is a schematic plan view of a display area of a display substrate.
  • the display area may include a plurality of pixel units P arranged in a matrix, and at least one of the plurality of pixel units P includes a first sub-pixel P1 that emits light of a first color, and a sub-pixel P1 that emits light of a second color.
  • the second sub-pixel P2 and the third sub-pixel P3 emitting light of the third color, the first sub-pixel P1, the second sub-pixel P2 and the third sub-pixel P3 all include a pixel driving circuit and a light-emitting device.
  • the pixel driving circuits in the first sub-pixel P1, the second sub-pixel P2 and the third sub-pixel P3 are respectively connected to the scanning signal line, the data signal line and the light-emitting signal line, and the pixel driving circuit is configured to connect the scanning signal line and the light-emitting signal line. Under the control of the line, the data voltage transmitted by the data signal line is received, and the corresponding current is output to the light-emitting device.
  • the light-emitting devices in the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 are respectively connected to the pixel driving circuit of the sub-pixel, and the light-emitting device is configured to respond to the current output by the pixel driving circuit of the sub-pixel. Brightness of light.
  • the pixel unit P may include red (R) sub-pixels, green (G) sub-pixels, and blue (B) sub-pixels, or may include red sub-pixels, green sub-pixels, and blue sub-pixels and white (W) sub-pixels, which are not limited in this disclosure.
  • the shape of the sub-pixels in the pixel unit may be rectangular, diamond, pentagon or hexagonal.
  • the pixel unit includes three sub-pixels, the three sub-pixels can be arranged horizontally, vertically, or in a zigzag manner.
  • the pixel unit includes four sub-pixels, the four sub-pixels can be arranged in a horizontal, vertical, or square manner. The arrangement is not limited in this disclosure.
  • FIG. 3 is a schematic cross-sectional structure diagram of a display substrate, illustrating the structure of three sub-pixels of the OLED display substrate.
  • the display substrate may include a driving circuit layer 102 disposed on a substrate 101 , a light emitting device 103 disposed on the side of the driving circuit layer 102 away from the substrate 101 , and a light emitting device 103 disposed on the side of the substrate 101 .
  • the encapsulation layer 104 on the side of the device 103 away from the substrate 101 .
  • the display substrate may include other film layers, such as spacer columns, etc., which are not limited in the present disclosure.
  • the substrate may be a flexible substrate, or it may be a rigid substrate.
  • the flexible substrate may include a stacked first flexible material layer, a first inorganic material layer, a semiconductor layer, a second flexible material layer and a second inorganic material layer, and the materials of the first flexible material layer and the second flexible material layer may be made of polymer.
  • the materials of the first inorganic material layer and the second inorganic material layer can be silicon nitride (SiNx ) or silicon oxide (SiOx), etc., to improve the water and oxygen resistance of the substrate, and the material of the semiconductor layer can be amorphous silicon (a-si).
  • PI imide
  • PET polyethylene terephthalate
  • surface-treated soft polymer film the materials of the first inorganic material layer and the second inorganic material layer can be silicon nitride (SiNx ) or silicon oxide (SiOx), etc., to improve the water and oxygen resistance of the substrate, and the material of the semiconductor layer can be amorphous silicon (a-si).
  • the driving circuit layer 102 of each sub-pixel may include a plurality of transistors and storage capacitors constituting the pixel driving circuit.
  • each sub-pixel includes one driving transistor and one storage capacitor as an example for illustration.
  • the driving circuit layer 102 of each sub-pixel may include: a first insulating layer 201 disposed on the substrate; an active layer disposed on the first insulating layer; a second insulating layer covering the active layer layer 202; the gate electrode and the first capacitor electrode disposed on the second insulating layer 202; the third insulating layer 203 covering the gate electrode and the first capacitor electrode; the second capacitor electrode disposed on the third insulating layer 203; covering
  • the fourth insulating layer 204 of the second capacitor electrode, the second insulating layer 202, the third insulating layer 203 and the fourth insulating layer 204 are provided with via holes, and the via holes expose the active layer; they are arranged on the fourth insulating layer 204
  • the light emitting device 103 may include an anode 301 , a pixel definition layer 302 , an organic light emitting layer 303 and a cathode 304 .
  • the anode 301 is arranged on the flat layer 205 and is connected to the drain electrode of the driving transistor 210 through a via hole opened on the flat layer 205;
  • the pixel definition layer 302 is arranged on the anode 301 and the flat layer 205, and a pixel opening is arranged on the pixel definition layer 302 , the pixel opening exposes the anode 301;
  • the organic light-emitting layer 303 is at least partially disposed in the pixel opening, and the organic light-emitting layer 303 is connected to the anode 301;
  • the cathode 304 is disposed on the organic light-emitting layer 303, and the cathode 304 is connected to the organic light-emitting layer 303;
  • the layer 303 is driven by the anode 301 and
  • the encapsulation layer 104 may include a stacked first encapsulation layer 401, a second encapsulation layer 402 and a third encapsulation layer 403.
  • the first encapsulation layer 401 and the third encapsulation layer 403 may be made of inorganic materials.
  • the second encapsulation layer 402 can be made of organic materials, and the second encapsulation layer 402 is disposed between the first encapsulation layer 401 and the third encapsulation layer 403 to ensure that the outside water vapor cannot enter the light emitting device 103 .
  • the organic light emitting layer 303 may include at least the hole injection layer 20 , the hole transport layer 30 , the light emitting layer 50 and the hole blocking layer 60 stacked on the anode 301 .
  • the hole injection layers 20 of all subpixels are a common layer connected together
  • the hole transport layers 30 of all subpixels are a common layer connected together
  • the light emitting layers 50 of adjacent subpixels may be There is a small amount of overlap, or may be isolated
  • the hole blocking layer 60 is a common layer connected together.
  • the pixel driving circuit may be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C or 7T1C structure.
  • FIG. 4 is an equivalent circuit diagram of a pixel driving circuit.
  • the pixel driving circuit may include 7 switching transistors (the first transistor T1 to the seventh transistor T7 ), 1 storage capacitor C and 8 signal lines (the data signal line DATA, the first scan signal line S1, The second scan signal line S2, the first initial signal line INIT1, the second initial signal line INIT2, the first power supply line VSS, the second power supply line VDD, and the light emitting signal line EM).
  • the first initial signal line INIT1 and the second initial signal line INIT2 may be the same signal line.
  • the control electrode of the first transistor T1 is connected to the second scan signal line S2, the first electrode of the first transistor T1 is connected to the first initial signal line INIT1, and the second electrode of the first transistor is connected to the second scan signal line S2.
  • Node N2 is connected.
  • the control electrode of the second transistor T2 is connected to the first scan signal line S1, the first electrode of the second transistor T2 is connected to the second node N2, and the second electrode of the second transistor T2 is connected to the third node N3.
  • the control electrode of the third transistor T3 is connected to the second node N2, the first electrode of the third transistor T3 is connected to the first node N1, and the second electrode of the third transistor T3 is connected to the third node N3.
  • the control electrode of the fourth transistor T4 is connected to the first scan signal line S1, the first electrode of the fourth transistor T4 is connected to the data signal line DATA, and the second electrode of the fourth transistor T4 is connected to the first node N1.
  • the control electrode of the fifth transistor T5 is connected to the light-emitting signal line EM, the first electrode of the fifth transistor T5 is connected to the second power supply line VDD, and the second electrode of the fifth transistor T5 is connected to the first node N1.
  • the control electrode of the sixth transistor T6 is connected to the light emitting signal line EM, the first electrode of the sixth transistor T6 is connected to the third node N3, and the second electrode of the sixth transistor T6 is connected to the first electrode of the light emitting device.
  • the control electrode of the seventh transistor T7 is connected to the first scan signal line S1, the first electrode of the seventh transistor T7 is connected to the second initial signal line INIT2, and the second electrode of the seventh transistor T7 is connected to the first electrode of the light emitting device.
  • the first end of the storage capacitor C is connected to the second power line VDD, and the second end of the storage capacitor C is connected to the second node N2.
  • the first to seventh transistors T1 to T7 may be P-type transistors, or may be N-type transistors. Using the same type of transistors in the pixel driving circuit can simplify the process flow, reduce the process difficulty of the display panel, and improve the product yield. In some possible implementations, the first to seventh transistors T1 to T7 may include P-type transistors and N-type transistors.
  • the second pole of the light emitting device is connected to the first power supply line VSS, the signal of the first power supply line VSS is a low-level signal, and the signal of the second power supply line VDD is a continuously high-level signal.
  • the first scan signal line S1 is the scan signal line in the pixel driving circuit of the display row
  • the second scan signal line S2 is the scan signal line in the pixel driving circuit of the previous display row, that is, for the nth display row, the first scan signal
  • the line S1 is S(n)
  • the second scanning signal line S2 is S(n-1)
  • the second scanning signal line S2 of this display line is the same as the first scanning signal line S1 in the pixel driving circuit of the previous display line
  • the signal lines can reduce the signal lines of the display panel and realize the narrow frame of the display panel.
  • the organic light-emitting layer of the OLED light-emitting element may include an emission layer (Emitting Layer, referred to as EML), and a hole injection layer (Hole Injection Layer, referred to as HIL), a hole transport layer (Hole Transport Layer, HTL for short), Hole Block Layer (HBL), Electron Block Layer (EBL), Electron Injection Layer (EIL), Electron Transport Layer (EIL) one or more film layers in ETL).
  • EML emission layer
  • HIL hole injection layer
  • HTL hole transport layer
  • HBL Hole Block Layer
  • EBL Electron Block Layer
  • EIL Electron Injection Layer
  • EIL Electron Transport Layer
  • the light-emitting layers of OLED light-emitting elements of different colors are different.
  • a red light-emitting element includes a red light-emitting layer
  • a green light-emitting element includes a green light-emitting layer
  • a blue light-emitting element includes a blue light-emitting layer.
  • the hole injection layer and the hole transport layer on one side of the light emitting layer can use a common layer
  • the electron injection layer and the electron transport layer on the other side of the light emitting layer can use a common layer.
  • any one or more of the hole injection layer, hole transport layer, electron injection layer, and electron transport layer may be fabricated by one process (one evaporation process or one inkjet printing process), However, isolation is achieved by the surface step difference of the formed film layer or by means of surface treatment.
  • any one or more of the hole injection layer, hole transport layer, electron injection layer and electron transport layer corresponding to adjacent sub-pixels may be isolated.
  • the organic light-emitting layer may be formed by using a fine metal mask (FMM, Fine Metal Mask) or an open mask (Open Mask) evaporation deposition, or by using an inkjet process.
  • FMM fine metal mask
  • Open Mask Open Mask
  • the material used in the hole injection layer HIL is similar to the material used in the hole transport layer HTL, and the highest occupied molecular orbital (Highest Occupied Molecular Orbit, HOMO) energy level of the hole injection layer material is between the anode work function.
  • HOMO Highest Occupied Molecular Orbit
  • the effect of hole injection is achieved by reducing the potential barrier between the anode and the hole transport layer.
  • the injection effect is general, and the charge transport performance is poor.
  • the implantation can be improved by using a multilayer structure with different HOMO levels, the multilayer structure will add multiple interfaces, which will negatively affect the OLED performance.
  • the use of multiple different materials results in the need for more evaporation sources and evaporation Plating chamber, the feasibility of mass production is not high.
  • the hole injection layer adopts a doped structure
  • the hole injection layer includes a host material and a doping material
  • the doping material is a P-doping material, such as 2, 3, 5, 6-tetrafluoro-7,7',8,8'-tetracyanodimethyl (F4-TCNQ), etc.
  • the host material and the doping material are doped according to a certain proportion to form a doped structure.
  • the P-type doping material is a material with strong electron-absorbing ability, it lacks electrons and has the ability to strongly pull electrons. Therefore, the P-type doping has the characteristics of strong electron-absorbing ability, so that the electrons can move to the anode under the action of the electric field.
  • the hole injection layer adopts a material with strong electron-withdrawing properties, which can not only improve the hole injection performance, but also improve the display defects caused by P-type doping. Studies have shown that materials with this characteristic usually have strong molecular polarity, are easy to crystallize, have poor stability, are difficult to process, and are not feasible for mass production.
  • Exemplary embodiments of the present disclosure provide an organic electroluminescence device including an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, with a first hole injection layer disposed between the anode and the light-emitting layer and a second hole injection layer, the first hole injection layer is arranged between the anode and the second hole injection layer;
  • the first hole injection layer includes aromatic amine compounds, quinone derivatives, ketones at least one of derivatives, fluorenone derivatives, dioxaborolane and derivatives thereof
  • the second hole injection layer includes aromatic amine compounds, quinone derivatives, and ketone derivatives , at least one of fluorenone derivatives and dioxaborolane and derivatives thereof;
  • the structures of the first hole injection layer and the second hole injection layer are different, and the different structures include the following Any one or more: the thicknesses of the first hole injection layer and the second hole injection layer are different, the material structures of the first hole injection
  • the number of materials of the hole injection layer and the second hole injection layer are different, and the energy levels of the materials of the first hole injection layer and the second hole injection layer are different;
  • the material structure includes the chemical formula of the material,
  • the number of materials includes the number of kinds of materials, the energy levels of which include the highest occupied molecular orbital HOMO energy level of the material and the lowest unoccupied molecular orbital LUMO energy level of the material.
  • the first hole injection layer and the second hole injection layer do not contain more than three kinds of materials.
  • the number of types of materials contained in the first hole injection layer and the second hole injection layer may include any one of the following: the first hole injection layer and the second hole injection layer both include one material; The first hole injection layer includes one material, the second hole injection layer includes two materials; the first hole injection layer includes two materials, and the second hole injection layer includes one material; the third hole injection layer includes two materials; A hole injection layer and a second hole injection layer both include two materials; the first hole injection layer includes two materials, and the second hole injection layer includes three materials; the first hole injection layer It includes three materials, and the second hole injection layer includes two materials; the first hole injection layer includes three materials, and the second hole injection layer includes one material; the first hole injection layer includes a materials, and the second hole injection layer includes three materials.
  • two or three materials included in the same layer may be in a doped form, or may be in a pre-mixed form, or may be in the form of some physicochemical connection by some physicochemical means , or a combination of the above manners, which is not limited in the present disclosure.
  • the second hole injection layer includes a second host material and a guest material doped in the second host material, one of the second host material and the guest material including Aromatic amine compounds, another one includes quinone derivatives, ketone derivatives, fluorenone derivatives or dioxaborolane and derivatives thereof.
  • the second host material includes an aromatic amine compound
  • the guest material includes quinone derivatives, ketone derivatives, fluorenone derivatives or dioxaborolane and derivatives thereof.
  • the second host material and guest material satisfy:
  • LUMO(B) is the lowest unoccupied molecular orbital LUMO energy level of the guest material
  • HOMO(A2) is the highest occupied molecular orbital HOMO energy level of the second host material.
  • the doping ratio of the guest material to the second hole injection layer is 1% to 35%.
  • the first hole injection layer includes a first host material, and the first host material and the guest material may be the same material.
  • the thickness of the second hole injection layer is 1 nm to 8 nm.
  • FIG. 5 is a schematic diagram of an OLED structure according to an exemplary embodiment of the present disclosure.
  • the OLED includes an anode 10 , a cathode 90 and an organic light-emitting layer disposed between the anode 10 and the cathode 90 .
  • the organic light emitting layer may include a stacked hole injection layer 20, a hole transport layer 30, an electron blocking layer (EBL) 40, a light emitting layer 50, a hole blocking layer 60, an electron transport layer 70 and Electron injection layer 80 .
  • EBL electron blocking layer
  • the hole injection layer 20 is a double injection layer structure, including a stacked first hole injection layer 21 and a second hole injection layer 22 , and the first hole injection layer 21 is disposed between the anode 10 and the anode 10 . Between the second hole injection layers 22 , the second hole injection layer 22 is provided between the first hole injection layer 21 and the hole transport layer 30 .
  • the hole injection layer 20 is configured to lower a barrier for hole injection from the anode, enabling efficient injection of holes from the anode into the light emitting layer 50 .
  • the hole transport layer 30 is configured to achieve controlled migration of the directional order of the injected holes.
  • the electron blocking layer 40 is configured to form a migration barrier for electrons, preventing electrons from migrating out of the light emitting layer 50 .
  • the light-emitting layer 50 is configured to recombine electrons and holes to emit light.
  • the hole blocking layer 60 is configured to form a migration barrier for holes, preventing the holes from migrating out of the light emitting layer 50 .
  • Electron transport layer 70 is configured to achieve controlled migration of the directional order of injected electrons.
  • the electron injection layer 80 is configured to lower a barrier for injecting electrons from the cathode, so that electrons can be efficiently injected from the cathode to the light-emitting layer 50 .
  • the first hole injection layer 21 may include aromatic amine-based compounds, quinone-based derivatives, ketone-based derivatives, fluorenone-based derivatives, and dioxaborolane and derivatives thereof
  • the second hole injection layer 22 may include at least one of aromatic amine compounds, quinone derivatives, ketone derivatives, fluorenone derivatives and dioxaborolane and derivatives thereof.
  • the difference in structure between the two includes any one or more of the following: the thicknesses of the first hole injection layer 21 and the second hole injection layer 22 are different, and the thickness of the first hole injection layer 21 and the second hole injection layer 22 are different.
  • the material structure of the hole injection layer 22 is different, the number of materials of the first hole injection layer 21 and the second hole injection layer 22 are different, and the materials of the first hole injection layer 21 and the second hole injection layer 22 can be different. different levels.
  • the material structure may include the chemical formula of the material, the amount of the material may include the number of types of the material, and the material energy level may include the highest occupied molecular orbital HOMO energy level of the material and the lowest unoccupied molecular orbital LUMO energy level of the material.
  • the thickness of the first hole injection layer 21 may be about 1 nm to 5 nm, eg, 1 nm to 3 nm.
  • the thickness of the second hole injection layer 22 may be about 1 nm to 15 nm, eg, 1 nm to 8 nm.
  • the thicknesses of the first hole injection layer 21 and the second hole injection layer 22 are different.
  • the thickness of the second hole injection layer is greater than the thickness of the first hole injection layer.
  • the first hole injection layer 21 may include one material
  • the second hole injection layer 22 may include two materials
  • the first hole injection layer 21 may include two materials
  • the second hole injection layer 21 may include two materials.
  • the hole injection layer 22 may include three kinds of materials, so that the first hole injection layer 21 and the second hole injection layer 22 can have different materials and types.
  • the first hole injection layer 21 may include a ketone derivative
  • the second hole injection layer 22 may include an aromatic amine compound and a ketone derivative.
  • the first hole injection layer 21 may include two materials, ketone derivatives and fluorenone derivatives
  • the second hole injection layer 22 may include aromatic amine compounds, ketone derivatives and fluorenone derivatives three materials.
  • the number of types of materials contained in the first hole injection layer 21 and the second hole injection layer 22 is not more than three.
  • the chemical formulas of materials such as aromatic amine compounds, quinone derivatives, ketone derivatives, fluorenone derivatives and dioxaborolane and derivatives thereof are different, and the first void
  • the hole injection layer 21 and the second hole injection layer 22 use different materials or different material combinations, so that the material structures of the first hole injection layer 21 and the second hole injection layer 22 can be different.
  • the highest occupied molecular orbital HOMO energy level of materials such as aromatic amines, quinone derivatives, ketone derivatives, fluorenone derivatives, and dioxaborolane and its derivatives
  • materials such as aromatic amines, quinone derivatives, ketone derivatives, fluorenone derivatives, and dioxaborolane and its derivatives
  • the first hole injection layer 21 and the second hole injection layer 22 can be realized.
  • the energy levels of the two hole injection layers 22 are different.
  • the first hole injection layer 21 adopts a single material structure, and the first hole injection layer 21 only includes the first host material A1.
  • the first host material A1 has strong electron-pulling properties and can effectively inject charges. Its highest occupied molecular orbital HOMO energy level and lowest unoccupied molecular orbital (Lowest Unoccupied Molecular Orbit, referred to as LUMO) energy level satisfy:
  • HOMO(A1) is the highest occupied molecular orbital HOMO energy level of the first host material A1
  • LUMO(A1) is the lowest unoccupied molecular orbital LUMO energy level of the first host material A1.
  • the first host material A1 may employ quinone derivatives, ketone derivatives, fluorenone derivatives, dioxaborolane and derivatives thereof, and the like.
  • the thickness of the first hole injection layer 21 is about 1 nm to 3 nm. Since the first hole injection layer 21 is made of a material with strong electron-pulling properties, if the film thickness is too thick, the voltage will increase or the lateral leakage will be affected, which will affect the light-emitting performance. This results in discontinuity of the film (the formation of island-like film thickness), which affects the implantation performance. In the exemplary embodiment, since the first hole injection layer 21 is disposed on the anode 10, there is a certain roughness on the surface of the anode 10, and if the film thickness is too low, the voltage will increase and the light-emitting performance will be affected.
  • the second hole injection layer 22 may adopt a doped structure including a second host material A2 and a guest material B doped in the second host material A2.
  • the guest material B has strong electron-withdrawing properties, and compared with the second host material A2, the guest material B has a higher polarity.
  • the HOMO energy level and the LUMO energy level of the second host material A2 and the guest material B satisfy:
  • LUMO(B) is the lowest unoccupied molecular orbital LUMO energy level of the guest material B
  • HOMO(A2) is the highest occupied molecular orbital HOMO energy level of the second host material A2.
  • the HOMO energy level and the LUMO energy level of the guest material B satisfy:
  • HOMO(B) is the highest occupied molecular orbital HOMO energy level of the guest material B.
  • the HOMO energy level of the second host material A2 satisfies:
  • may be greater than or equal to
  • the second host material A2 and the guest material B may be co-evaporated through a multi-source evaporation process to form the second hole injection layer 22 of the doped structure.
  • the doping ratio of the guest material B in the second hole injection layer 22 is about 1% to 50%. Since the guest material B is a material with electron-pulling properties and has higher polarity than the second host material A2, the doping ratio of the guest material B can be set to be lower than 50%. If the doping ratio of the guest material B is too high, the voltage will increase and the lifetime will decrease. In some possible implementations, the doping ratio of the guest material B in the second hole injection layer 22 is about 1% to 35%. In other possible implementations, the doping ratio of the guest material B in the second hole injection layer 22 is about 5% to 20%.
  • the doping ratio refers to the ratio of the mass of the guest material to the mass of the hole injection layer, that is, the mass percentage.
  • the second host material A2 and the guest material B are co-evaporated, so that the second host material A2 and the guest material B are uniformly dispersed in the second hole injection layer, which can be controlled by controlling the guest material during the evaporation process.
  • the doping ratio is regulated by the evaporation rate of B, or the doping ratio is regulated by controlling the evaporation rate ratio of the second host material A2 and the guest material B.
  • the thickness of the second hole injection layer 22 is about 1 nm to 8 nm.
  • the guest material B is doped in the second host material A2, which will affect the electron-pulling properties of the second host material A2 to a certain extent. If the film thickness is too thick, the voltage will increase and the lifespan will decrease. If the film thickness is too thin, the film formation will be affected. The uniformity and uniformity of the film can lead to discontinuities in the film and affect the implantation performance.
  • the thickness of the second hole injection layer 22 is about 2 nm to 5 nm. Within this thickness range, the guest material B can effectively achieve electron pulling characteristics, improve hole injection characteristics, and effectively reduce voltage. In an exemplary embodiment, the thickness of the second hole injection layer 22 may be greater than that of the first hole injection layer 21 .
  • the guest material B may be the same as the first host material A1 of the first hole injection layer 21 , that is, the first host material A1 serves as both the host material of the first hole injection layer 21 and the second host material Doping material of the hole injection layer 22 .
  • the guest material B is not an azatriphenylene-based material, especially not a HAT-CN material.
  • the research shows that the HAT-CN material is highly sensitive to temperature, and has a narrow selection range for the second host material A2, and the voltage is too high.
  • the second host material A2 can be an aromatic amine compound, and its substituent can be carbazole, methyl fluorene, spirofluorene, dibenzothiophene or furan, etc.
  • the aromatic amine compound is a It is a hole transport material with high mobility, high stability and not easy to crystallize.
  • the second host material material A2 includes, but is not limited to, the structure shown in formula (I):
  • L may be a linking group formed via a substituted or unsubstituted arylene group having 5 to 50 ring atoms, or a plurality of substituted or unsubstituted arylene groups having 5 to 50 ring atoms.
  • Ar 1 to Ar 4 may not be exactly the same, each independently a substituted or unsubstituted aryl group having 5 to 50 ring atoms, and at least one of Ar 1 to Ar 4 is selected from the following structures: any of:
  • R1 to R25 are each independently any one of the following:
  • the guest material B may employ quinone derivatives, ketone derivatives, fluorenone derivatives, dioxaborolane and derivatives thereof, and the like.
  • ketone derivatives are hole-injecting materials with strong electron-withdrawing ability.
  • the strong electron-withdrawing ability is manifested as having good electron affinity, which is characterized by HOMO energy level and LUMO energy level.
  • the guest material B includes, but is not limited to, the structure shown in formula (II):
  • Z may be a substituted or unsubstituted benzene ring, pyridine ring, thiophene ring, quinoline, indole or thienothiophene ring and the like.
  • Y1 to Y4 may each independently be N or C-R35. Y1 to Y4 may be the same as each other, or may be different from each other.
  • R31 to R34 may be the same as each other, or may be different from each other, and each independently any one of the following: hydrogen, deuterium, halogen group, nitrile group, substituted or unsubstituted alkyl, substituted or unsubstituted haloalkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted haloalkoxy, substituted or unsubstituted aryl, substituted or unsubstituted halo substituted aryl, substituted or unsubstituted silyl, substituted or unsubstituted heterocycle.
  • R35 can be any of the following: hydrogen, deuterium, halogen group, nitrile group, substituted or unsubstituted alkyl, substituted or unsubstituted haloalkyl, substituted or unsubstituted Substituted alkoxy, substituted or unsubstituted haloalkoxy, substituted or unsubstituted aryl, substituted or unsubstituted haloaryl, substituted or unsubstituted silyl , substituted or unsubstituted heterocycles.
  • Ar in formula (II) may be:
  • Ar in formula (II) may be:
  • X1 and X2 in Ar 5 and Ar 6 may be the same, or may be different.
  • X1 and X2 may each be independently selected from any one of the following structures:
  • R41 to R43 are each hydrogen, fluoroalkyl, alkyl, aryl or heterocyclyl, and R42 and R43 may form a ring.
  • the anode may employ a material with a high work function.
  • the anode can be made of a transparent oxide material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the thickness of the anode can be about 80 nm to 200 nm.
  • the anode can use a composite structure of metal and transparent oxide, such as Ag/ITO, Ag/IZO or ITO/Ag/ITO, etc.
  • the thickness of the metal layer in the anode can be about 80nm to 100nm, and the transparent oxide in the anode can be used.
  • the thickness of the material can be about 5 nm to 20 nm, so that the average reflectivity of the anode in the visible light region is about 85% to 95%.
  • the cathode may be made of a metal material, which may be formed by an evaporation process, and the metal material may be magnesium (Mg), silver (Ag), or aluminum (Al), or an alloy material such as
  • Mg magnesium
  • Al aluminum
  • the ratio of Mg:Ag is about 3:7 to 1:9
  • the thickness of the cathode can be about 10nm to 20nm, so that the average transmittance of the cathode at a wavelength of 530nm is about 50% to 60%.
  • the cathode can be magnesium (Mg), silver (Ag), aluminum (Al) or Mg:Ag alloy, and the thickness of the cathode can be greater than about 80 nm, so that the cathode has good reflectivity.
  • the hole transport layer may adopt a material with high hole mobility, such as an aromatic amine compound, whose substituent group may be carbazole, methylfluorene, spirofluorene, dibenzothiophene or furan etc., formed by an evaporation process, the thickness of the hole transport layer may be about 90 nm to 140 nm, and the carrier mobility of the hole transport layer material may be about 10 -3 cm 2 /Vs to 10 -5 cm 2 /Vs , the conductivity of the hole transport layer is less than or equal to the conductivity of the first hole injection layer and the second hole injection layer.
  • the hole transport layer may adopt a material with high hole mobility, such as an aromatic amine compound, whose substituent group may be carbazole, methylfluorene, spirofluorene, dibenzothiophene or furan etc., formed by an evaporation process
  • the thickness of the hole transport layer may be about 90 nm to 140 nm
  • the material of the hole transport layer may be the same as the second host material in the second hole injection layer.
  • the HOMO energy level of the material of the hole transport layer satisfies:
  • HOMO(D) is the highest occupied molecular orbital HOMO level of the hole transport layer.
  • two organic layers are further disposed between the second hole injection layer and the light emitting layer, and the two organic layers may be a hole transport layer and an electron blocking layer.
  • the electron blocking layer may have a thickness of about 1 nm to 10 nm, is configured to transfer holes, block electrons, and block excitons generated in the light-emitting layer, and the conductivity of the electron blocking layer is less than or equal to the first empty layer. Conductivity of the hole injection layer and the second hole injection layer.
  • the light-emitting layer may include a light-emitting host material and a light-emitting guest material.
  • the light-emitting host material may adopt a bipolar single host, or may adopt a double host formed by blending a hole-type host and an electron-type host.
  • the light-emitting guest material can be a phosphorescent material, a fluorescent material, a delayed fluorescent material, etc., and the doping ratio of the light-emitting guest material is about 5% to 15%.
  • the hole blocking layer has a thickness of about 2 nm to 10 nm, and is configured to block holes and block excitons generated within the light emitting layer.
  • the electron transport layer can be prepared by using thiophene, imidazole or azine derivatives, etc., by blending with lithium quinolate, the proportion of lithium quinolate is about 30% to 70%, and the electron
  • the thickness of the transport layer may be about 20 nm to 70 nm.
  • the electron injection layer may be formed by an evaporation process using materials such as lithium fluoride (LiF), lithium 8-hydroxyquinolate (LiQ), ytterbium (Yb) or calcium (Ca).
  • materials such as lithium fluoride (LiF), lithium 8-hydroxyquinolate (LiQ), ytterbium (Yb) or calcium (Ca).
  • LiF lithium fluoride
  • LiQ lithium 8-hydroxyquinolate
  • Yb ytterbium
  • Ca calcium
  • the OLED may include an encapsulation layer, and the encapsulation layer may be encapsulated with a sealant, or may be encapsulated with a thin film.
  • the thickness of the organic light-emitting layer between the cathode and the anode can be designed to meet the optical path requirements of the optical micro-resonator, so as to obtain optimal light intensity and color.
  • the display substrate including the OLED structure may be formed in the following manner.
  • a driving circuit layer is formed on the substrate through a patterning process, and the driving circuit layer of each sub-pixel may include a driving transistor and a storage capacitor constituting a pixel driving circuit.
  • a flat layer is formed on the substrate on which the aforementioned structure is formed, and a via hole exposing the drain electrode of the driving transistor is formed on the flat layer of each sub-pixel.
  • an anode is formed through a patterning process, and the anode of each sub-pixel is connected to the drain electrode of the driving transistor through a via hole on the flat layer.
  • a pixel definition layer is formed by a patterning process, and a pixel opening exposing the anode is formed on the pixel definition layer of each sub-pixel, and each pixel opening serves as a light-emitting area of each sub-pixel.
  • the first hole injection layer, the second hole injection layer, the hole transport layer and the electron blocking layer are sequentially evaporated by using an open mask, and the first hole is formed on the display substrate.
  • the common layer of the injection layer, the second hole injection layer, the hole transport layer and the electron blocking layer that is, the first hole injection layers of all sub-pixels are connected, and the second hole injection layers of all sub-pixels are connected , the hole transport layers of all sub-pixels are connected, and the electron blocking layers of all sub-pixels are connected.
  • the respective areas of the first hole injection layer, the second hole injection layer, the hole transport layer, and the electron blocking layer are approximately the same, and the thicknesses are different.
  • the red light-emitting layer, the green light-emitting layer and the blue light-emitting layer are respectively evaporated on different sub-pixels by using a fine metal mask, and the light-emitting layers of adjacent sub-pixels may have a small amount of overlap (for example, the overlapping portion accounts for the respective light-emitting layers)
  • the area of the layer pattern is less than 10%), or may be isolated.
  • the hole blocking layer, the electron transport layer, the electron injection layer and the cathode are sequentially evaporated using an open mask to form a common layer of the hole blocking layer, the electron transport layer, the electron injection layer and the cathode on the display substrate, that is, all the The hole blocking layers of the sub-pixels are connected, the electron transport layers of all the sub-pixels are connected, the electron injection layers of all the sub-pixels are connected, and the cathodes of all the sub-pixels are connected.
  • first hole injection layer, the second hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, the electron transport layer, the electron injection layer, and the cathode The orthographic projection of the layer on the substrate is continuous.
  • first hole injection layer, the second hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, the electron transport layer, the electron injection layer, and the cathode of the at least one row or column of subpixels At least one of the layers is connected.
  • At least one of a first hole injection layer, a second hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a cathode of the plurality of subpixels Layers are connected.
  • the organic light emitting layer may include a microcavity adjustment layer between the hole transport layer and the light emitting layer.
  • a fine metal mask can be used to vapor-deposit the red microcavity adjusting layer and the red light-emitting layer, the green microcavity adjusting layer and the green light-emitting layer, and the blue microcavity adjusting layer on different sub-pixels, respectively. layer and blue light-emitting layer.
  • the areas of the first hole injection layer and the second hole injection layer may be approximately equal, and the first hole injection layer
  • the orthographic projection of the injection layer on the substrate at least includes the orthographic projection of the light-emitting regions of the two sub-pixels on the substrate
  • the orthographic projection of the second hole injection layer on the substrate at least includes the orthographic projection of the light-emitting regions of the two sub-pixels on the substrate, That is, the orthographic projections of the first hole injection layer and the second hole injection layer on the substrate overlap with the orthographic projections of the light-emitting regions of at least two sub-pixels on the substrate.
  • the first hole injection layer and the second hole injection layer are common layers, and the light emitting layers of different sub-pixels are isolated, the first hole injection layer and the second hole injection layer are
  • the orthographic projection on the substrate includes the orthographic projection of the light-emitting layer on the substrate, and the areas of the first hole injection layer and the second hole injection layer are both larger than the area of the light-emitting layer.
  • the orthographic projection of the light-emitting layer of at least part of the sub-pixels on the substrate overlaps with the orthographic projection of the pixel driving circuit driving on the substrate.
  • Table 1 is a performance comparison result of different hole injection layer structures in OLED
  • Fig. 6 is an efficiency comparison result of different hole injection layer structures in OLED
  • Fig. 7 is a kind of efficiency comparison result of different hole injection layer structures in OLED Lifetime comparison results.
  • ITO was used for the anode
  • Mg:Ag alloy was used for the cathode.
  • LT95 represents the time when the OLED decreases from the initial brightness (100%) to 95%. Since the lifetime curve follows a multi-exponential decay model, the lifetime of the OLED can be estimated based on LT95. in,
  • Structure 1 is ITO/HIL/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag, and HIL is a single-layer undoped structure including a single hole injection material.
  • Structure 2 is ITO/HIL(P-doping 3%)/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag, HIL(P-doping 3%) is a single-layer doped structure, and the hole injection material 3% doped P-type dopant material.
  • HIL1 includes a first host material A1
  • HIL2 includes a second host material A2 and a guest material B, the guest material B being the same as the first host material A1.
  • Structure 5 has obvious improvements in reducing voltage, increasing efficiency, and increasing lifespan, etc.
  • the double-implanted layer structure can optimize the crystallinity and stability of the material and improve the device lifetime. Since the dual-injection layer structure of the exemplary embodiment of the present disclosure has more optimized charge injection performance, reduces the interface potential barrier, reduces the interface stacking, and avoids the lifetime degradation caused by material deterioration, the exemplary embodiment of the present disclosure proposes The dual-implanted layer structure can optimize the crystallinity and stability of the material and improve the device life.
  • Table 2 shows another performance comparison result of different hole injection layer structures in OLED
  • FIG. 8 shows another efficiency comparison result of different hole injection layer structures in OLED
  • FIG. 9 shows the results of different hole injection layer structures in OLED.
  • the anode in the two comparative structures is ITO
  • the cathode is an alloy of Mg:Ag. in
  • Structure 4 is ITO/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag
  • the hole injection layer is a double injection layer structure
  • HIL2 includes a second host material A2 and a guest material B
  • HTL includes a single hollow Hole injection material.
  • HIL1 includes a first host material A1
  • HIL2 includes a second host material A2 and a guest material B, the guest material B being the same as the first host material A1.
  • structure 5 has obvious improvement in reducing voltage and increasing life. Since the structure 4 lacks the first hole injection layer (ie, HIL1 ) of the exemplary embodiment of the present disclosure, the injection effect of the structure 4 is poor and the lifetime is short. Since the dual-injection layer structure of the exemplary embodiment of the present disclosure has more optimized charge injection performance, reduces the interface potential barrier, reduces the interface stacking, and avoids the lifetime degradation caused by material deterioration, the exemplary embodiment of the present disclosure proposes The hole injection layer structure has the advantages of low voltage, high efficiency and long life.
  • HIL1 first hole injection layer
  • Table 3 is another performance comparison result of different hole injection layer structures in the OLED
  • FIG. 10 is another lifespan comparison result of different hole injection layer structures in the OLED.
  • the anode in the two comparative structures is ITO
  • the cathode is an alloy of Mg:Ag. in
  • Structure 3 is ITO/HIL1/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag, the hole injection layer is a single-layer structure, and HIL1 includes a first host material A1.
  • HIL1 includes a first host material A1
  • HIL2 includes a second host material A2 and a guest material B, the guest material B being the same as the first host material A1.
  • the voltages of both structure 3 and structure 5 did not change much, but the efficiency and life of structure 5 were significantly improved.
  • the structure 3 lacks the second hole injection layer (ie, HIL2) of the exemplary embodiment of the present disclosure, the efficiency of the structure 3 is bottomed out and the lifetime is short.
  • the dual-injection layer structure of the exemplary embodiment of the present disclosure has more optimized charge injection performance, reduces the interface potential barrier, reduces the interface stacking, and avoids the lifetime degradation caused by material deterioration, the exemplary embodiment of the present disclosure proposes
  • the hole injection layer structure has the advantages of low voltage, high efficiency and long life.
  • Table 4 shows the comparison results of different doping ratios of the second hole injection layer in the OLED.
  • the three comparative structures are all ITO/HIL1/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag, the hole injection layer adopts the double injection layer structure of the exemplary embodiment of the present disclosure, and HIL1 includes a first body
  • the materials A1 and HIL2 include a second host material A2 and a guest material B, and the guest material B is the same as the first host material A1.
  • the doping ratio of guest material B in structure 6 is 5%
  • the doping ratio of guest material B in structure 7 is 10%
  • the doping ratio of guest material B in structure 8 is 20%.
  • the doping ratio of the guest material B in the second hole injection layer HIL2 changed, the voltage did not change significantly, the efficiency did not change significantly, and the lifetime did not change significantly, indicating that the performance of the OLED in the exemplary embodiment of the present disclosure varies with the doping ratio.
  • the change is small, the crosstalk between sub-pixels will not be caused when the doping ratio is greater than 5%, and the problem of low doping ratio of the P-type doping structure is effectively avoided.
  • the double-layer implantation structure of the exemplary embodiment of the present disclosure avoids the phenomenon of pixel defects caused by the change of the doping ratio.
  • Exemplary embodiments of the present disclosure provide an OLED, the hole injection layer adopts a double injection layer structure, the first hole injection layer adopts a single material structure, and the second hole injection layer adopts a doping structure different from P-type doping , which can effectively improve the crystallinity and thermal stability of hole injection materials, reduce defects in the evaporation process, achieve stable injection performance, effectively reduce device voltage, and improve device efficiency and service life. Since the doping material is different from the P-type doping material, the problem of low doping ratio of the P-type doping structure is avoided, and a large doping ratio (greater than 5%) will not cause crosstalk between sub-pixels, effectively improving the display. quality.
  • the hole injection layer provided by the exemplary embodiment of the present disclosure has good preparation process compatibility, does not increase the evaporation chamber, and has good mass production.
  • the present disclosure also provides a display device including the aforementioned organic electroluminescence device.
  • the display device can be any product or component that has a display function, such as a mobile phone, a tablet computer, a TV, a monitor, a notebook computer, a digital photo frame, a navigator, a car monitor, a watch, a wristband, etc.

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Abstract

一种有机电致发光器件和显示装置。有机电致发光器件包括阳极、阴极以及设置在所述阳极和阴极之间的发光层，所述阳极和发光层之间设置有第一空穴注入层和第二空穴注入层，所述第一空穴注入层设置在阳极与第二空穴注入层之间；所述第一空穴注入层和第二空穴注入层的结构不同，所述结构不同包含如下任意一种或多种：所述第一空穴注入层和第二空穴注入层的厚度不同，所述第一空穴注入层和第二空穴注入层的材料结构不同，所述第一空穴注入层和第二空穴注入层的材料数量种类数不同，所述第一空穴注入层和第二空穴注入层的材料能级不同。

Description

有机电致发光器件和显示装置 技术领域
本公开涉及但不限于显示技术领域，尤指一种有机电致发光器件和显示装置。
背景技术
有机电致发光器件(Organic Light Emitting Device，简称OLED)为主动发光器件，具有发光、超薄、广视角、高亮度、高对比度、较低耗电、极高反应速度等优点，已逐渐成为极具发展前景的下一代显示技术。
OLED包括阳极、阴极以及设置在阳极和阴极之间的发光层，其发光原理是将空穴、电子分别由阳极、阴极注入至发光层，当电子和空穴在发光层中相遇时，电子和空穴复合从而产生激子(exciton)，在从激发态转变为基态的同时，这些激子发光。为了使电子和空穴在较低的驱动电压下顺利地从电极注入至发光层，阳极与发光层之间配置有空穴注入层和空穴传输层，阴极与发光层之间配置有电子注入层和电子传输层。为了使OLED达到更好的发光效率，实现低电压和长寿命，空穴注入层的设计是比较重要的。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
一种有机电致发光器件，包括阳极、阴极以及设置在所述阳极和阴极之间的发光层，所述阳极和发光层之间设置有第一空穴注入层和第二空穴注入层，所述第一空穴注入层设置在阳极与第二空穴注入层之间；所述第一空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种，所述第二空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种；
所述第一空穴注入层和第二空穴注入层的结构不同，所述结构不同包含如下任意一种或多种：所述第一空穴注入层和第二空穴注入层的厚度不同，所述第一空穴注入层和第二空穴注入层的材料结构不同，所述第一空穴注入层和第二空穴注入层的材料数量种类数不同，所述第一空穴注入层和第二空穴注入层的材料能级不同；
所述材料结构包括材料的化学式，所述材料数量包括材料的种类数，所述材料能级包括材料的最高占据分子轨道HOMO能级和材料的最低未占分子轨道LUMO能级。
在示例性实施方式中，所述第一空穴注入层和第二空穴注入层所包含的材料种类数均不超过三种。
在示例性实施方式中，所述第二空穴注入层包括第二主体材料和掺杂在所述第二主体材料中的客体材料，所述第二主体材料和所述客体材料中的一个包括芳胺类化合物，另一个包括醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物，所述第二主体材料和客体材料满足：
-1.5eV＜│LUMO(B)│-│HOMO(A2)│＜1.5eV；
其中，LUMO(B)为所述客体材料的最低未占分子轨道LUMO能级，HOMO(A2)为所述第二主体材料的最高占据分子轨道HOMO能级。
在示例性实施方式中，所述客体材料还满足：
│HOMO(B)│≥6eV，│LUMO(B)│≥4eV。
HOMO(B)为所述客体材料的最高占据分子轨道HOMO能级。
在示例性实施方式中，所述第二主体材料还满足：
5eV≤│HOMO(A2)│≤6eV。
在示例性实施方式中，所述客体材料占所述第二空穴注入层的掺杂比例为1％至35％。
在示例性实施方式中，所述第一空穴注入层包括第一主体材料，所述第一主体材料与所述客体材料相同。
在示例性实施方式中，所述第一空穴注入层的厚度为1nm至3nm，所述 第二空穴注入层的厚度为1nm到8nm。
在示例性实施方式中，所述芳胺类化合物的取代基团包括咔唑、甲基芴、螺芴、二苯并噻吩或呋喃。
在示例性实施方式中，所述第二主体材料包括但不限于具有式(Ⅰ)结构的化合物：
Figure PCTCN2020118588-appb-000001
式(Ⅰ)中，Ar 1至Ar 4各自独立地为取代或未取代的具有5至50个环原子的芳基，L为经由取代或未取代的具有5至50个环原子的亚芳基构成的连接基团，或者，由多个取代或未取代的具有5至50个环原子的亚芳基与M1连接而获得的连接基团，M1为如下任意一种：单键、氧原子、硫原子、氮原子、具有1至20个碳原子的饱和或不饱和二价脂族烃基团。
在示例性实施方式中，Ar 1至Ar 4中至少一个选自具有如下结构中的任意一种：
Figure PCTCN2020118588-appb-000002
其中，R1至R25各自独立地为如下任意一种：氢原子、具有5至50个环原子的芳基、取代或未取代的具有1至50个碳原子的烷基、取代或未取代的具有1至50个碳原子的烷氧基、取代或未取代的具有6至50个环原子的芳烷基、取代或未取代的具有5至50个环原子的芳氧基、取代或未取代的具有5至50个环原子的芳硫基、取代或未取代的具有1至50个碳原子的烷氧羰基、被M2取代的具有5至50个环原子的芳基，M2为氨基、卤素原子、氰基、硝基、羟基或羧基。
在示例性实施方式中，所述客体材料包括但不限于具有式(Ⅱ)结构的化合物：
Figure PCTCN2020118588-appb-000003
式(Ⅱ)中，Z为经取代或未经取代的苯环、吡啶环、噻吩环、喹啉、吲哚或噻吩并噻吩环；
Ar 5为
Figure PCTCN2020118588-appb-000004
Ar 6为
Figure PCTCN2020118588-appb-000005
Y 1至Y 4各自独立地为N或C-R35；
R31至R35各自独立地选自如下任意一种：氢、氘、卤素基团、腈基、经取代或未经取代的烷基、经取代或未经取代的卤代烷基、经取代或未经取代的烷氧基、经取代或未经取代的卤代烷氧基、经取代或未经取代的芳基、经取代或未经取代的卤代芳基、经取代或未经取代的甲硅烷基、经取代或未经取代的杂环；
X1和X2各自独立地选自如下结构中的任意一种：
Figure PCTCN2020118588-appb-000006
R41至R43各自独立地为如下任意一种：氢、氟代烷基、烷基、芳基和杂环基，R42和R43形成环。
在示例性实施方式中，所述第二空穴注入层和发光层之间还设置有至少一层有机层，所述至少一层有机层中的载流子迁移率为10 -3cm 2/Vs至10 -5cm 2/Vs，和/或，所述至少一层有机层的导电率均小于或等于所述第一空穴注入层和第二空穴注入层的导电率。
在示例性实施方式中，所述至少一层有机层的材料与所述第二主体材料相同。
在示例性实施方式中，所述至少一层有机层的的材料满足：
5eV≤│HOMO(D)│≤6.5eV；
HOMO(D)为所述空穴传输层的最高占据分子轨道HOMO能级。
在示例性实施方式中，所述第二空穴注入层和发光层之间还设置有两层有机层，所述两层有机层中的载流子迁移率均为10 -3cm 2/Vs至10 -5cm 2/Vs，和/或，所述两层有机层的导电率均小于或等于所述第一空穴注入层和第二空穴注入层的导电率。
一种显示装置，包括前述的有机电致发光器件。
在示例性实施方式中，所述显示装置包括基板和形成于所述基板上的多个子像素，所述子像素包括所述有机电致发光器件；所述第一空穴注入层和第二空穴注入层的面积大致相等，且所述第一空穴注入层和第二空穴注入层在基板上的正投影均与至少两个子像素的发光区域在基板上的正投影有交叠。
在示例性实施方式中，所述第一空穴注入层和第二空穴注入层的面积均大于所述发光层的面积。
在示例性实施方式中，所述子像素还包括像素驱动电路，至少部分子像素的发光层在基板上的正投影与所述像素驱动电路的驱动晶体管在基板上的正投影有交叠。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中各部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1为一种OLED显示装置的结构示意图；
图2为一种显示基板显示区域的平面结构示意图；
图3为一种显示基板的剖面结构示意图；
图4为一种像素驱动电路的等效电路图；
图5为本公开示例性实施例一种OLED结构的示意图；
图6为OLED中不同空穴注入层结构的一种效率比较结果；
图7为OLED中不同空穴注入层结构的一种寿命比较结果；
图8为OLED中不同空穴注入层结构的另一种效率比较结果；
图9为OLED中不同空穴注入层结构的另一种寿命比较结果；
图10为OLED中不同空穴注入层结构的又一种寿命比较结果。
附图标记说明:
10—阳极；             20—空穴注入层；       21—第一空穴注入层；
22—第二空穴注入层；   30—空穴传输层；       40—电子阻挡层；
50—发光层；           60—空穴阻挡层；       70—电子传输层；
80—电子注入层；       90—阴极；             101—基底；
102—驱动电路层；      103—发光器件。        104—封装层；
201—第一绝缘层；      202—第二绝缘层；      203—第三绝缘层；
204—第四绝缘层；      205—平坦层；          210—驱动晶体管；
211—存储电容；        301—阳极；            302—像素定义层；
303—有机发光层；      304—阴极；            401—第一封装层；
402—第二封装层；      403—第三封装层。
具体实施方式
本文中的实施方式可以以多个不同形式来实施。所属技术领域的普通技术人员可以很容易地理解一个事实，就是实现方式和内容可以在不脱离本公开的宗旨及其范围的条件下被变换为各种各样的形式。因此，本公开不应该被解释为仅限定在下面的实施方式所记载的内容中。在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
在附图中，有时为了明确起见，可能夸大表示了构成要素的大小、层的厚度或区域。因此，本公开的任意一个实现方式并不一定限定于图中所示尺寸，附图中部件的形状和大小不反映真实比例。此外，附图示意性地示出了理想的例子，本公开的任意一个实现方式不局限于附图所示的形状或数值等。
本文中的“第一”、“第二”、“第三”等序数词是为了避免构成要素的混同而设置，而不是为了在数量方面上进行限定的。
在本文中，为了方便起见，使用“中部”、“上”、“下”、“前”、“后”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示方位或位置关系的词句以参照附图说明构成要素的位置关系，仅是为了便于描述实施方式和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。构成要素的位置关系可根据描述的构成要素的方向进行适当地改变。因此，不局限于在文中说明的词句，根据情况可以适当地更换。
在本文中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解。例如，可以是固定连接，或可拆卸连接，或一体地连接；可以是机械连接，或电连接；可以是直接相连，或通过中间件间接相连，或两个元件内部的连通。对于本领域的普通技术人员而言，可以根据情况理解上述术语在本公开中的含义。
在本文中，晶体管是指至少包括栅电极、漏电极以及源电极这三个端子的元件。晶体管在漏电极(或称漏电极端子、漏区域或漏电极)与源电极(或称源电极端子、源区域或源电极)之间具有沟道区域，并且电流能够流过漏电极、沟道区域以及源电极。在本文中，沟道区域是指电流主要流过的区域。
在本文中，第一极可以为漏电极、第二极可以为源电极，或者第一极可以为源电极、第二极可以为漏电极。在使用极性相反的晶体管的情况或电路工作中的电流方向变化的情况下，“源电极”及“漏电极”的功能有时可以互相调换。因此，在本文中，“源电极”和“漏电极”可以互相调换。
在本文中，“电连接”包括构成要素通过具有某种电作用的元件连接在一起的情况。“具有某种电作用的元件”只要可以进行连接的构成要素间的电信号的授受，就对其没有特别的限制。“具有某种电作用的元件”例如可以是电极或布线，或者是晶体管等开关元件，或者是电阻器、电感器或电容器等其它功能元件等。
在本文中，“平行”是指两条直线形成的角度为-10°以上且10°以下的状态，因此，也包括该角度为-5°以上且5°以下的状态。另外，“垂直”是指两条直线形成的角度为80°以上且100°以下的状态，因此，也包括85°以上且95°以下的角度的状态。
在本文中，“膜”和“层”可以相互调换。例如，有时可以将“导电层”换成为“导电膜”。与此同样，有时可以将“绝缘膜”换成为“绝缘层”。
本文中的“约”，是指不严格限定界限，允许工艺和测量误差范围内的数值。
图1为一种OLED显示装置的结构示意图。如图1所示，OLED显示装置可以包括扫描信号驱动器、数据信号驱动器、发光信号驱动器、OLED显示基板、第一电源单元、第二电源单元和初始电源单元。在示例性实施方式中，OLED显示基板至少包括多个扫描信号线(S1到SN)、多个数据信号线(D1到DM)和多个发光信号线(EM1到EMN)，扫描信号驱动器被配置为依次向多个扫描信号线(S1到SN)提供扫描信号，数据信号驱动器被配置为向多个数据信号线(D1到DM)提供数据信号，发光信号驱动器被配置为依次向多个发光信号线(EM1到EMN)提供发光控制信号。在示例性实施方式中，多个扫描信号线和多个发光信号线沿着水平方向延伸，多个数据信号线沿着竖直方向延伸。所述显示装置包括多个子像素，一个子像素例如连接一条扫描信号线、一条发光控制线和一条数据信号线。第一电源单元、第二电源单元和初始电源单元分别被配置为通过第一电源线、第二电源线和初始信号线向像素电路提供第一电源电压、第二电源电压和初始电源电压。
图2为一种显示基板显示区域的平面结构示意图。如图2所示，显示区域可以包括以矩阵方式排布的多个像素单元P，多个像素单元P的至少一个中包括出射第一颜色光线的第一子像素P1、出射第二颜色光线的第二子像素 P2和出射第三颜色光线的第三子像素P3，第一子像素P1、第二子像素P2和第三子像素P3均包括像素驱动电路和发光器件。第一子像素P1、第二子像素P2和第三子像素P3中的像素驱动电路分别与扫描信号线、数据信号线和发光信号线连接，像素驱动电路被配置为在扫描信号线和发光信号线的控制下，接收数据信号线传输的数据电压，向所述发光器件输出相应的电流。第一子像素P1、第二子像素P2和第三子像素P3中的发光器件分别与所在子像素的像素驱动电路连接，发光器件被配置为响应所在子像素的像素驱动电路输出的电流发出相应亮度的光。
在示例性实施方式中，像素单元P中可以包括红色(R)子像素、绿色(G)子像素和蓝色(B)子像素，或者可以包括红色子像素、绿色子像素、蓝色子像素和白色(W)子像素，本公开在此不做限定。在示例性实施方式中，像素单元中子像素的形状可以是矩形状、菱形、五边形或六边形。像素单元包括三个子像素时，三个子像素可以采用水平并列、竖直并列或品字方式排列，像素单元包括四个子像素时，四个子像素可以采用水平并列、竖直并列或正方形(Square)方式排列，本公开在此不做限定。
图3为一种显示基板的剖面结构示意图，示意了OLED显示基板三个子像素的结构。如图3所示，在垂直于显示基板的平面上，显示基板了可以包括设置在基底101上的驱动电路层102、设置在驱动电路层102远离基底101一侧的发光器件103以及设置在发光器件103远离基底101一侧的封装层104。在一些可能的实现方式中，显示基板可以包括其它膜层，如隔垫柱等，本公开在此不做限定。
在示例性实施方式中，基底可以是柔性基底，或者可以是刚性基底。柔性基底可以包括叠设的第一柔性材料层、第一无机材料层、半导体层、第二柔性材料层和第二无机材料层，第一柔性材料层和第二柔性材料层的材料可以采用聚酰亚胺(PI)、聚对苯二甲酸乙二酯(PET)或经表面处理的聚合物软膜等材料，第一无机材料层和第二无机材料层的材料可以采用氮化硅(SiNx)或氧化硅(SiOx)等，用于提高基底的抗水氧能力，半导体层的材料可以采用非晶硅(a-si)。
在示例性实施方式中，每个子像素的驱动电路层102可以包括构成像素 驱动电路的多个晶体管和存储电容，图3中以每个子像素中包括一个驱动晶体管和一个存储电容为例进行示意。在一些可能的实现方式中，每个子像素的驱动电路层102可以包括：设置在基底上的第一绝缘层201；设置在第一绝缘层上的有源层；覆盖有源层的第二绝缘层202；设置在第二绝缘层202上的栅电极和第一电容电极；覆盖栅电极和第一电容电极的第三绝缘层203；设置在第三绝缘层203上的第二电容电极；覆盖第二电容电极的第四绝缘层204，第二绝缘层202、第三绝缘层203和第四绝缘层204上开设有过孔，过孔暴露出有源层；设置在第四绝缘层204上的源电极和漏电极，源电极和漏电极分别通过过孔与有源层连接；覆盖前述结构的平坦层205，平坦层205上开设有过孔，过孔暴露出漏电极。有源层、栅电极、源电极和漏电极组成驱动晶体管210，第一电容电极和第二电容电极组成存储电容211。
在示例性实施方式中，发光器件103可以包括阳极301、像素定义层302、有机发光层303和阴极304。阳极301设置在平坦层205上，通过平坦层205上开设的过孔与驱动晶体管210的漏电极连接；像素定义层302设置在阳极301和平坦层205上，像素定义层302上设置有像素开口，像素开口暴露出阳极301；有机发光层303至少部分设置在像素开口内，有机发光层303与阳极301连接；阴极304设置在有机发光层303上，阴极304与有机发光层303连接；有机发光层303在阳极301和阴极304驱动下出射相应颜色的光线。
在示例性实施方式中，封装层104可以包括叠设的第一封装层401、第二封装层402和第三封装层403，第一封装层401和第三封装层403可采用无机材料，第二封装层402可采用有机材料，第二封装层402设置在第一封装层401和第三封装层403之间，可以保证外界水汽无法进入发光器件103。
在示例性实施方式中，有机发光层303可以至少包括在阳极301上叠设的空穴注入层20、空穴传输层30、发光层50和空穴阻挡层60。在示例性实施方式中，所有子像素的空穴注入层20是连接在一起的共通层，所有子像素的空穴传输层30是连接在一起的共通层，相邻子像素的发光层50可以有少量的交叠，或者可以是隔离的，空穴阻挡层60是连接在一起的共通层。
在示例性实施方式中，像素驱动电路可以是3T1C、4T1C、5T1C、5T2C、 6T1C或7T1C结构。图4为一种像素驱动电路的等效电路图。如图4所示，像素驱动电路可以包括7个开关晶体管(第一晶体管T1到第七晶体管T7)、1个存储电容C和8个信号线(数据信号线DATA、第一扫描信号线S1、第二扫描信号线S2、第一初始信号线INIT1、第二初始信号线INIT2、第一电源线VSS、第二电源线VDD和发光信号线EM)。其中，第一初始信号线INIT1、第二初始信号线INIT2可以为同一条信号线。
在示例性实施方式中，第一晶体管T1的控制极与第二扫描信号线S2连接，第一晶体管T1的第一极与第一初始信号线INIT1连接，第一晶体管的第二极与第二节点N2连接。第二晶体管T2的控制极与第一扫描信号线S1连接，第二晶体管T2的第一极与第二节点N2连接，第二晶体管T2的第二极与第三节点N3连接。第三晶体管T3的控制极与第二节点N2连接，第三晶体管T3的第一极与第一节点N1连接，第三晶体管T3的第二极与第三节点N3连接。第四晶体管T4的控制极与第一扫描信号线S1连接，第四晶体管T4的第一极与数据信号线DATA连接，第四晶体管T4的第二极与第一节点N1连接。第五晶体管T5的控制极与发光信号线EM连接，第五晶体管T5的第一极与第二电源线VDD连接，第五晶体管T5的第二极与第一节点N1连接。第六晶体管T6的控制极与发光信号线EM连接，第六晶体管T6的第一极与第三节点N3连接，第六晶体管T6的第二极与发光器件的第一极连接。第七晶体管T7的控制极与第一扫描信号线S1连接，第七晶体管T7的第一极与第二初始信号线INIT2连接，第七晶体管T7的第二极与发光器件的第一极连接。存储电容C的第一端与第二电源线VDD连接，存储电容C的第二端与第二节点N2连接。
在示例性实施方式中，第一晶体管T1到第七晶体管T7可以是P型晶体管，或者可以是N型晶体管。像素驱动电路中采用相同类型的晶体管可以简化工艺流程，减少显示面板的工艺难度，提高产品的良率。在一些可能的实现方式中，第一晶体管T1到第七晶体管T7可以包括P型晶体管和N型晶体管。
在示例性实施方式中，发光器件的第二极与第一电源线VSS连接，第一电源线VSS的信号为低电平信号，第二电源线VDD的信号为持续提供高电 平信号。第一扫描信号线S1为本显示行像素驱动电路中的扫描信号线，第二扫描信号线S2为上一显示行像素驱动电路中的扫描信号线，即对于第n显示行，第一扫描信号线S1为S(n)，第二扫描信号线S2为S(n-1)，本显示行的第二扫描信号线S2与上一显示行像素驱动电路中的第一扫描信号线S1为同一信号线，可以减少显示面板的信号线，实现显示面板的窄边框。
在示例性实施方式中，OLED发光元件的有机发光层可以包括发光层(Emitting Layer，简称EML)，以及包括空穴注入层(Hole Injection Layer，简称HIL)、空穴传输层(Hole Transport Layer，简称HTL)、空穴阻挡层(Hole Block Layer，简称HBL)、电子阻挡层(Electron Block Layer，简称EBL)、电子注入层(Electron Injection Layer，简称EIL)、电子传输层(Electron Transport Layer，简称ETL)中的一个或多个膜层。在阳极和阴极的电压驱动下，利用有机材料的发光特性根据需要的灰度发光。
在示例性实施方式中，不同颜色的OLED发光元件的发光层不同。例如，红色发光元件包括红色发光层，绿色发光元件包括绿色发光层，蓝色发光元件包括蓝色发光层。为了降低工艺难度和提升良率，位于发光层一侧的空穴注入层和空穴传输层可以采用共通层，位于发光层另一侧的电子注入层和电子传输层可以采用共通层。在示例性实施方式中，空穴注入层、空穴传输层、电子注入层和电子传输层中的任意一层或多层可以通过一次工艺(一次蒸镀工艺或一次喷墨打印工艺)制作，但通过形成的膜层表面段差或者通过表面处理等手段实现隔离。例如，相邻子像素对应的空穴注入层、空穴传输层、电子注入层和电子传输层中的任意一层或多层可以是隔离的。在示例性实施方式中，有机发光层可以通过采用精细金属掩模版(FMM，Fine Metal Mask)或者开放式掩膜版(Open Mask)蒸镀制备形成，或者采用喷墨工艺制备形成。
一种OLED结构中，空穴注入层HIL采用的材料与空穴传输层HTL的材料类似，空穴注入层材料的最高占据分子轨道(Highest Occupied Molecular Orbit，简称HOMO)能级介于阳极功函数与空穴传输层材料的HOMO能级之间，通过降低阳极与空穴传输层之间的势垒来达到空穴注入 的作用。研究表明，该结构各层之间依然存在着势垒，注入效果一般，电荷传输性能较差。虽然采用具有不同HOMO能级的多层结构可以改善注入效果，但多层结构会增加多个界面，对OLED性能带来负面影响，采用多种不同的材料导致需要更多的蒸镀源和蒸镀腔室，量产可行性不高。
另一种OLED结构中，空穴注入层采用掺杂结构，空穴注入层包括主体材料和掺杂材料，掺杂材料为P型掺杂(P-doping)材料，例如2,3,5,6-四氟-7,7',8,8'-四氰二甲基(F4-TCNQ)等，主体材料和掺杂材料按照一定比例掺杂形成掺杂结构。由于P型掺杂材料是一种具有强吸电子能力的材料，本身缺电子，具有强拉电子的能力，因而利用P型掺杂具有强吸电子能力的特性，使得电子在电场作用下向阳极一侧快速移动，导致空穴向空穴传输层一侧快速传输，实现高效的空穴注入性能。研究表明，P型掺杂结构热稳定性不佳、易结晶，不利于制备，在掺杂比例大于5％时容易导致子像素间串扰(crosstalk)，产生显示不良。
又一种OLED结构中，空穴注入层采用具有强吸电子特性的材料，既可以改善空穴注入性能，又可以改善P型掺杂产生的显示不良。研究表明，具有这种特性的材料通常具有很强的分子极性，易结晶并且稳定性差，工艺难度高，量产可行性不高。
本公开示例性实施例提供了一种有机电致发光器件，包括阳极、阴极以及设置在所述阳极和阴极之间的发光层，所述阳极和发光层之间设置有第一空穴注入层和第二空穴注入层，所述第一空穴注入层设置在阳极与第二空穴注入层之间；所述第一空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种，所述第二空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种；所述第一空穴注入层和第二空穴注入层的结构不同，所述结构不同包含如下任意一种或多种：所述第一空穴注入层和第二空穴注入层的厚度不同，所述第一空穴注入层和第二空穴注入层的材料结构不同，所述第一空穴注入层和第二空穴注入层的材料数量种类数不同，所述第一空穴注入层和第二空穴注入层的材料能级不同；所述材料结构包括材料的化学式，所述材料数量包括材料的种类数，所述材料能 级包括材料的最高占据分子轨道HOMO能级和材料的最低未占分子轨道LUMO能级。
在示例性实施方式中，所述第一空穴注入层和第二空穴注入层所包含的材料种类数均不超过三种。所述第一空穴注入层和第二空穴注入层所包含的材料种类数可以包括如下任意一种：所述第一空穴注入层和第二空穴注入层均包括一种材料；所述第一空穴注入层包括一种材料，第二空穴注入层包括两种材料；所述第一空穴注入层包括两种材料，第二空穴注入层包括一种材料；所述第一空穴注入层和第二空穴注入层均包括两种材料；所述第一空穴注入层包括两种材料，第二空穴注入层包括三种材料；所述第一空穴注入层包括三种材料，第二空穴注入层包括两种材料；所述第一空穴注入层包括三种材料，第二空穴注入层包括一种材料；所述第一空穴注入层包括一种材料，第二空穴注入层包括三种材料。
在示例性实施方式中，同一层中包括的两种或三种材料，可以为掺杂的形式，或者可以为预混的形式，或者可以通过一些物理化学手段使其产生一些物理化学连接的形式，或者可以是以上多种方式的组合，本公开对此不做限定。
在示例性实施方式中，所述第二空穴注入层包括第二主体材料和掺杂在所述第二主体材料中的客体材料，所述第二主体材料和所述客体材料中的一个包括芳胺类化合物，另一个包括醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物。例如，所述第二主体材料包括芳胺类化合物，所述客体材料包括醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物。
所述第二主体材料和客体材料满足：
-1.5eV＜│LUMO(B)│-│HOMO(A2)│＜1.5eV；
其中，LUMO(B)为所述客体材料的最低未占分子轨道LUMO能级，HOMO(A2)为所述第二主体材料的最高占据分子轨道HOMO能级。
在示例性实施方式中，所述客体材料占所述第二空穴注入层的掺杂比例为1％至35％。
在示例性实施方式中，所述第一空穴注入层包括第一主体材料，所述第一主体材料与所述客体材料可以为相同材料。
在示例性实施方式中，所述第二空穴注入层的厚度为1nm到8nm。
图5为本公开示例性实施例一种OLED结构的示意图。如图5所示，OLED包括阳极10、阴极90以及设置在阳极10和阴极90之间有机发光层。在示例性实施方式中，有机发光层可以包括叠设的空穴注入层20、空穴传输层30、电子阻挡层(EBL)40、发光层50、空穴阻挡层60、电子传输层70和电子注入层80。在示例性实施方式中，空穴注入层20为双注入层结构，包括叠设的第一空穴注入层21和第二空穴注入层22，第一空穴注入层21设置在阳极10与第二空穴注入层22之间，第二空穴注入层22设置在第一空穴注入层21与空穴传输层30之间。在示例性实施方式中，空穴注入层20被配置为降低从阳极注入空穴的势垒，使空穴能从阳极有效地注入到发光层50中。空穴传输层30被配置为实现注入空穴定向有序的可控迁移。电子阻挡层40被配置为对电子形成迁移势垒，阻止电子从发光层50中迁移出来。发光层50被配置为使电子和空穴发生复合而发出光线。空穴阻挡层60被配置为对空穴形成迁移势垒，阻止空穴从发光层50中迁移出来。电子传输层70被配置为实现注入电子定向有序的可控迁移。电子注入层80被配置为降低从阴极注入电子的势垒，使电子能从阴极有效地注入到发光层50。
在示例性实施方式中，第一空穴注入层21可以包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种，第二空穴注入层22可以包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种，但第一空穴注入层21和第二空穴注入层22两者的结构不同。在示例性实施方式中，两者的结构不同包含如下任意一种或多种：第一空穴注入层21和第二空穴注入层22的厚度不同，第一空穴注入层21和第二空穴注入层22的材料结构不同，第一空穴注入层21和第二空穴注入层22的材料数量种类数不同，第一空穴注入层21和第二空穴注入层22的材料能级不同。材料结构可以包括材料的化学式，材料数量可以包括材料的种类数，材料能级可以包括材料的最高占据分子轨道HOMO能级和材料的最低未占分子轨道LUMO能级。
在示例性实施方式中，第一空穴注入层21的厚度可以约为1nm至5nm，例如1nm至3nm。第二空穴注入层22的厚度可以约为1nm至15nm，例如1nm到8nm。
在示例性实施方式中，第一空穴注入层21和第二空穴注入层22的厚度不同。例如，第二空穴注入层的厚度大于第一空穴注入层的厚度。
在示例性实施方式中，第一空穴注入层21可以包括一种材料，第二空穴注入层22可以包括二种材料，或者，第一空穴注入层21可以包括二种材料，第二空穴注入层22可以包括三种材料，从而实现第一空穴注入层21和第二空穴注入层22的材料数量种类数不同。例如，第一空穴注入层21可以包括酮类衍生物一种材料，第二空穴注入层22可以包括芳胺类化合物和酮类衍生物二种材料。又如，第一空穴注入层21可以包括酮类衍生物和芴酮类衍生物二种材料，第二空穴注入层22可以包括芳胺类化合物、酮类衍生物和芴酮类衍生物三种材料。
在示例性实施方式中，第一空穴注入层21和第二空穴注入层22所包含的材料种类数均不超过三种。
在示例性实施方式中，芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物等材料的化学式不同，通过第一空穴注入层21和第二空穴注入层22采用不同的材料或不同的材料组合，可以实现第一空穴注入层21和第二空穴注入层22的材料结构不同。
在示例性实施方式中，芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物等材料的最高占据分子轨道HOMO能级和材料的最低未占分子轨道LUMO能级不同，通过第一空穴注入层21和第二空穴注入层22采用不同的材料或不同的材料组合，可以实现第一空穴注入层21和第二空穴注入层22的能级不同。
在示例性实施方式中，第一空穴注入层21采用单一材料结构，第一空穴注入层21只包含第一主体材料A1。第一主体材料A1具有较强的拉电子性能，能有效注入电荷，其最高占据分子轨道HOMO能级和最低未占分子轨道(Lowest Unoccupied Molecular Orbit，简称LUMO)能级满足：
│HOMO(A1)│≥6eV，│LUMO(A1)│≥4eV。
HOMO(A1)为第一主体材料A1的最高占据分子轨道HOMO能级，LUMO(A1)为第一主体材料A1的最低未占分子轨道LUMO能级。
在示例性实施方式中，第一主体材料A1可以采用醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物等。
在示例性实施方式中，第一空穴注入层21的厚度约为1nm至3nm。由于第一空穴注入层21采用具有较强的拉电子性能的材料，膜厚过厚会导致电压升高或者横向漏电，影响发光性能，膜厚过薄则影响成膜性和均匀性，会导致薄膜不连续(形成岛状膜厚)，影响注入性能。在示例性实施方式中，由于第一空穴注入层21设置在阳极10上，阳极10表面存在一定的粗糙度，膜厚过低还会导致电压升高，影响发光性能。
在示例性实施方式中，第二空穴注入层22可以采用掺杂结构，包括第二主体材料A2和掺杂在第二主体材料A2中的客体材料B。客体材料B具有较强的拉电子性能，相比于第二主体材料A2，客体材料B具有更高的极性。第二主体材料A2和客体材料B的HOMO能级和LUMO能级满足：
-1.5eV＜│LUMO(B)│-│HOMO(A2)│＜1.5eV。
LUMO(B)为客体材料B的最低未占分子轨道LUMO能级，HOMO(A2)为第二主体材料A2的最高占据分子轨道HOMO能级。
在示例性实施方式中，客体材料B的HOMO能级和LUMO能级满足：
│HOMO(B)│≥6eV，│LUMO(B)│≥4eV。
HOMO(B)为客体材料B的最高占据分子轨道HOMO能级。
在示例性实施方式中，第二主体材料A2的HOMO能级满足：
5eV≤│HOMO(A2)│≤6.5eV。
在示例性实施方式中，│LUMO(B)│可以大于或等于│HOMO(A2)│，或者，│LUMO(B)│可以小于或等于│HOMO(A2)│。
在示例性实施方式中，可以通过多源蒸镀工艺共同蒸镀第二主体材料A2和客体材料B，形成掺杂结构的第二空穴注入层22。
在示例性实施方式中，客体材料B占第二空穴注入层22的掺杂比例约 为1％到50％。由于客体材料B为具有拉电子特性的材料，相比于第二主体材料A2具有更高的极性，因而可以将客体材料B的掺杂比例设置为低于50％。客体材料B的掺杂比例过高，会导致电压升高，寿命下降。在一些可能的实现方式中，客体材料B占第二空穴注入层22的掺杂比例约为1％到35％。在另一些可能的实现方式中，客体材料B占第二空穴注入层22的掺杂比例约为5％到20％。本公开示例性实施例中，掺杂比例是指客体材料的质量与空穴注入层的质量之比，即质量百分比。在示例性实施方式中，第二主体材料A2和客体材料B共蒸，使第二主体材料A2和客体材料B均匀分散在第二空穴注入层中，可以在蒸镀过程中通过控制客体材料B的蒸镀速率来调控掺杂比例，或者通过控制第二主体材料A2和客体材料B的蒸镀速率比来调控掺杂比例。
在示例性实施方式中，第二空穴注入层22的厚度约为1nm到8nm。客体材料B掺杂在第二主体材料A2中，在一定程度上会影响第二主体材料A2的拉电子特性，膜厚过厚会导致电压升高，寿命下降，膜厚过薄则影响成膜性和均匀性，会导致薄膜不连续，影响注入性能。在一些可能的实现方式中，第二空穴注入层22的厚度约为2nm到5nm，在该厚度范围内，客体材料B能有效实现拉电子特性，提高空穴注入特性，有效降低电压。在示例性实施方式中，第二空穴注入层22的厚度可以大于第一空穴注入层21的厚度。
在示例性实施方式中，客体材料B可以与第一空穴注入层21的第一主体材料A1相同，即第一主体材料A1既作为第一空穴注入层21的主体材料，又作为第二空穴注入层22的掺杂材料。
在示例性实施方式中，客体材料B不是氮杂苯并菲类材料，尤其不是HAT-CN材料。研究表明，HAT-CN材料对温度的敏感性较高，并且对第二主体材料A2的选择范围较窄，电压过高。
在示例性实施方式中，第二主体材料材料A2可以采用芳胺类化合物，其取代基团可以是咔唑、甲基芴、螺芴、二苯并噻吩或呋喃等，芳胺类化合物是一种具有高迁移率、高稳定性、不易结晶的空穴传输材料。
在示例性实施方式中，第二主体材料材料A2包括但不限于如式(Ⅰ)所示结构：
Figure PCTCN2020118588-appb-000007
式(Ⅰ)中，L可以为经由取代或未取代的具有5至50个环原子的亚芳基构成的连接基团，或者，由多个取代或未取代的具有5至50个环原子的亚芳基与M1连接而获得的连接基团，M1为如下任意一种：单键、氧原子、硫原子、氮原子、具有1至20个碳原子的饱和或不饱和二价脂族烃基团。
式(Ⅰ)中，Ar 1至Ar 4可以不完全相同，各自独立地为取代或未取代的具有5至50个环原子的芳基，Ar 1至Ar 4中至少一个选自具有如下结构中的任意一种：
Figure PCTCN2020118588-appb-000008
其中，R1至R25各自独立地为如下任意一种：
氢原子、具有5至50个环原子的芳基、取代或未取代的具有1至50个碳原子的烷基、取代或未取代的具有1至50个碳原子的烷氧基、取代或未取代的具有6至50个环原子的芳烷基、取代或未取代的具有5至50个环原子的芳氧基、取代或未取代的具有5至50个环原子的芳硫基、取代或未取代的具有1至50个碳原子的烷氧羰基、被M2取代的具有5至50个环原子的芳基，M2为氨基、卤素原子、氰基、硝基、羟基或羧基。
在示例性实施方式中，客体材料B可以采用醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物等。其中，酮类衍生物是一种具有强吸电子能力的空穴注入材料，强吸电子能力表现为具有较好的电子亲和势，通过HOMO能级和LUMO能级来表征。
在示例性实施方式中，客体材料B包括但不限于如式(Ⅱ)所示结构：
Figure PCTCN2020118588-appb-000009
式(Ⅱ)中，Z可以为经取代或未经取代的苯环、吡啶环、噻吩环、喹啉、吲哚或噻吩并噻吩环等。
Y1至Y4可以各自独立地为N或者C-R35。Y1至Y4可以彼此相同，或者可以彼此不同。
在示例性实施方式中，R31至R34可以彼此相同，或者可以彼此不同，并且各自独立地为如下任意一种：氢、氘、卤素基团、腈基、经取代或未经取代的烷基、经取代或未经取代的卤代烷基、经取代或未经取代的烷氧基、经取代或未经取代的卤代烷氧基、经取代或未经取代的芳基、经取代或未经取代的卤代芳基、经取代或未经取代的甲硅烷基、经取代或未经取代的杂环。
在示例性实施方式中，R35可以为如下任意一种：氢、氘、卤素基团、腈基、经取代或未经取代的烷基、经取代或未经取代的卤代烷基、经取代或未经取代的烷氧基、经取代或未经取代的卤代烷氧基、经取代或未经取代的芳基、经取代或未经取代的卤代芳基、经取代或未经取代的甲硅烷基、经取代或未经取代的杂环。
在示例性实施方式中，式(Ⅱ)中的Ar 5可以为：
Figure PCTCN2020118588-appb-000010
在示例性实施方式中，式(Ⅱ)中的Ar 6可以为：
Figure PCTCN2020118588-appb-000011
在示例性实施方式中，Ar 5和Ar 6中的X1和X2可以相同，或者可以不同。
在示例性实施方式中，X1和X2可以各自独立地选自如下结构中的任意一种：
Figure PCTCN2020118588-appb-000012
在示例性实施方式中，R41至R43分别为氢、氟代烷基、烷基、芳基或杂环基，R42和R43可以形成环。
在示例性实施方式中，阳极可以采用具有高功函数的材料。对于底发射型，阳极可以采用透明氧化物材料，如氧化铟锡(ITO)或氧化铟锌(IZO)等，阳极的厚度可以约为80nm至200nm。对于顶发射型，阳极可以采用金属和透明氧化物的复合结构，如Ag/ITO、Ag/IZO或者ITO/Ag/ITO等，阳极中金属层的厚度可以约为80nm至100nm，阳极中透明氧化物的厚度可以约为5nm至20nm，使阳极在可见光区的平均反射率约为85％～95％。
在示例性实施方式中，对于顶发射型OLED，阴极可以采用金属材料，通过蒸镀工艺形成，金属材料可以采用镁(Mg)、银(Ag)或铝(Al)，或者采用合金材料，如Mg:Ag的合金，Mg:Ag比例约为3:7至1:9，阴极的厚度可以约为10nm至20nm，使阴极在波长530nm处的平均透过率约为50％～60％。对于底发射型OLED，阴极可以采用镁(Mg)、银(Ag)、铝(Al)或Mg:Ag的合金，阴极的厚度可以约大于80nm，使阴极具有良好的反射率。
在示例性实施方式中，第二空穴注入层和发光层之间还设置有至少一层有机层，至少一层有机层可以是空穴传输层。在示例性实施方式中，空穴传输层可以采用空穴迁移率较高的材料，如芳胺类化合物，其取代基团可以是咔唑、甲基芴、螺芴、二苯并噻吩或呋喃等，通过蒸镀工艺形成，空穴传输层的厚度可以约为90nm至140nm，空穴传输层材料的载流子迁移率可以约为10 -3cm 2/Vs至10 -5cm 2/Vs，空穴传输层的导电率均小于或等于第一空穴注入层和第二空穴注入层的导电率。
在示例性实施方式中，空穴传输层的材料可以与第二空穴注入层中的第二主体材料相同。
在示例性实施方式中，空穴传输层的材料的HOMO能级满足：
5eV≤│HOMO(D)│≤6.5eV。
HOMO(D)为空穴传输层的最高占据分子轨道HOMO能级。
在示例性实施方式中，第二空穴注入层和发光层之间还设置有两层有机层，两层有机层可以是空穴传输层和电子阻挡层。在示例性实施方式中，电子阻挡层的厚度可以约为1nm至10nm，配置为传递空穴、阻挡电子以及阻挡发光层内产生的激子，电子阻挡层的导电率均小于或等于第一空穴注入层和第二空穴注入层的导电率。
在示例性实施方式中，发光层可以包括发光主体材料和发光客体材料。发光主体材料可以采用双极性单主体，或者可以采用由空穴型主体和电子型主体共混形成的双主体。发光客体材料可以采用磷光材料、荧光材料、延迟荧光材料等，发光客体材料的掺杂比例约为5％至15％。
在示例性实施方式中，空穴阻挡层的厚度约为2nm至10nm，配置为阻挡空穴以及阻挡发光层内产生的激子。
在示例性实施方式中，电子传输层可以采用噻吩类、咪唑类或吖嗪类衍生物等，通过与喹啉锂共混的方式制备，喹啉锂的比例约为30％至70％，电子传输层的厚度可以约为20nm至70nm。
在示例性实施方式中，电子注入层可以采用氟化锂(LiF)、8-羟基喹啉锂(LiQ)、镱(Yb)或钙(Ca)等材料，通过蒸镀工艺形成，电子注入层的厚度可以约为0.5nm至2nm。
在示例性实施方式中，OLED可以包括封装层，封装层可以采用框胶封装，或者可以采用薄膜封装。
在示例性实施方式中，对于顶发射型OLED，阴极和阳极之间的有机发光层的厚度可以按照满足光学微谐振腔的光程要求设计，以获得最优的出光强度和颜色。
在示例性实施方式中，可以采用如下方式形成包括OLED结构的显示基板。通过图案化工艺在基底上形成驱动电路层，每个子像素的驱动电路层可 以包括构成像素驱动电路的驱动晶体管和存储电容。在形成前述结构的基底上形成平坦层，每个子像素的平坦层上形成有暴露出驱动晶体管的漏电极的过孔。在形成前述结构的基底上，通过图案化工艺形成阳极，每个子像素的阳极通过平坦层上的过孔与驱动晶体管的漏电极连接。在形成前述结构的基底上，通过图案化工艺形成像素定义层，每个子像素的像素定义层上形成有暴露出阳极的像素开口，每个像素开口作为每个子像素的发光区域。在形成前述结构的基底上，先采用开放式掩膜版依次蒸镀第一空穴注入层、第二空穴注入层、空穴传输层和电子阻挡层，在显示基板上形成第一空穴注入层、第二空穴注入层、空穴传输层和电子阻挡层的共通层，即所有子像素的第一空穴注入层是连通的，所有子像素的第二空穴注入层是连通的，所有子像素的空穴传输层是连通的，所有子像素的电子阻挡层是连通的。例如，第一空穴注入层、第二空穴注入层、空穴传输层和电子阻挡层各自的面积大致是相同的，厚度是不同的。然后采用精细金属掩模版在不同的子像素分别蒸镀红色发光层、绿色发光层和蓝色发光层，相邻子像素的发光层是可以有少量的交叠(例如，交叠部分占各自发光层图案的面积小于10％)，或者可以是隔离的。随后采用开放式掩膜版依次蒸镀空穴阻挡层、电子传输层、电子注入层和阴极，在显示基板上形成空穴阻挡层、电子传输层、电子注入层和阴极的共通层，即所有子像素的空穴阻挡层是连通的，所有子像素的电子传输层是连通的，所有子像素电子注入层的是连通的，所有子像素的阴极是连通的。
在示例性实施方式中，第一空穴注入层、第二空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层、电子注入层和阴极中的一层或多层在基底上的正投影是连续的。在一些示例中，至少一行或一列的子像素的第一空穴注入层、第二空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层、电子注入层和阴极中的至少一层是连通的。在一些示例中，多个子像素的第一空穴注入层、第二空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层、电子注入层和阴极中的至少一层是连通的。
在示例性实施方式中，有机发光层可以包括位于空穴传输层和发光层之间的微腔调节层。例如，可以在形成空穴传输层之后，采用精细金属掩模版在不同的子像素分别蒸镀红色微腔调节层和红色发光层、绿色微腔调节层和 绿色发光层以及和蓝色微腔调节层和蓝色发光层。
在示例性实施方式中，由于第一空穴注入层和第二空穴注入层是共通层，因而第一空穴注入层和第二空穴注入层的面积可以大致相等，且第一空穴注入层在基板上的正投影至少包括两个子像素的发光区域在基板上的正投影，第二空穴注入层在基板上的正投影至少包括两个子像素的发光区域在基板上的正投影，即第一空穴注入层和第二空穴注入层在基板上的正投影均与至少两个子像素的发光区域在基板上的正投影有交叠。
在示例性实施方式中，由于第一空穴注入层和第二空穴注入层是共通层，而不同子像素的发光层是隔离的，因而第一空穴注入层和第二空穴注入层在基板上的正投影包含发光层在基板上的正投影，第一空穴注入层和第二空穴注入层的面积均大于发光层的面积。
在示例性实施方式中，至少部分子像素的发光层在基板上的正投影与像素驱动电路驱动在基板上的正投影有交叠。
表1为OLED中不同空穴注入层结构的一种性能比较结果，图6为OLED中不同空穴注入层结构的一种效率比较结果，图7为OLED中不同空穴注入层结构的一种寿命比较结果。三个对比结构中的阳极采用ITO，阴极采用Mg:Ag的合金。表1中LT95表示OLED从初始亮度(100％)降低到95％的时间，由于寿命曲线遵循多指数衰减模型，因而可以根据LT95估算OLED的寿命。其中，
结构1为ITO/HIL/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，HIL为单层未掺杂结构，包括单一的空穴注入材料。
结构2为ITO/HIL(P-doping 3％)/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，HIL(P-doping 3％)为单层掺杂结构，在空穴注入材料中掺杂3％的P型掺杂材料。
结构5为ITO/HIL1/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层为本公开示例性实施例的双注入层结构，HIL1包括第一主体材料A1，HIL2包括第二主体材料A2和客体材料B，客体材料B与第一主体材料A1相同。
如表1、图6和图7所示，相比于结构1和结构2，结构5在降低电压、提升效率和提升寿命等方面均具有明显的改善，说明本公开示例性实施例所提出的双注入层结构可以优化材料的结晶性和稳定性，提高器件寿命。由于本公开示例性实施例的双注入层结构具有更优化的电荷注入性能，减少了界面势垒，减少了界面堆积，避免了因材料劣化造成的寿命衰减，因此本公开示例性实施例所提出的双注入层结构可以优化材料的结晶性和稳定性，提高器件寿命。
表1、不同空穴注入层结构的性能比较
Figure PCTCN2020118588-appb-000013
表2为OLED中不同空穴注入层结构的另一种性能比较结果，图8为OLED中不同空穴注入层结构的另一种效率比较结果，图9为OLED中不同空穴注入层结构的另一种寿命比较结果。二个对比结构中的阳极采用ITO，阴极采用Mg:Ag的合金。其中，
结构4为ITO/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层为双注入层结构，HIL2包括第二主体材料A2和客体材料B，HTL包括单一的空穴注入材料。
结构5为ITO/HIL1/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层为本公开示例性实施例的双注入层结构，HIL1包括第一主体材料A1，HIL2包括第二主体材料A2和客体材料B，客体材料B与第一主体材料A1相同。
如表2、图8和图9所示，相比于结构4，结构5在降低电压和提升寿命 等方面均具有明显的改善。由于结构4缺少本公开示例性实施例的第一空穴注入层(即HIL1)，因而结构4的注入效果较差，寿命较短。由于本公开示例性实施例的双注入层结构具有更优化的电荷注入性能，减少了界面势垒，减少了界面堆积，避免了因材料劣化造成的寿命衰减，因此本公开示例性实施例所提出的空穴注入层结构具有低电压、高效率、长寿命的优势。
表2、不同空穴注入层结构的性能比较
Figure PCTCN2020118588-appb-000014
表3为OLED中不同空穴注入层结构的又一种性能比较结果，图10为OLED中不同空穴注入层结构的又一种寿命比较结果。二个对比结构中的阳极采用ITO，阴极采用Mg:Ag的合金。其中，
结构3为ITO/HIL1/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层为单层结构，HIL1包括第一主体材料A1。
结构5为ITO/HIL1/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层为本公开示例性实施例的双注入层结构，HIL1包括第一主体材料A1，HIL2包括第二主体材料A2和客体材料B，客体材料B与第一主体材料A1相同。
如表3和图10所示，结构3和结构5两者的电压变化不大，但结构5的效率和寿命明显提升。由于结构3缺少本公开示例性实施例的第二空穴注入层(即HIL2)，因而结构3的效率交底，寿命较短。由于本公开示例性实施例的双注入层结构具有更优化的电荷注入性能，减少了界面势垒，减少了界面堆积，避免了因材料劣化造成的寿命衰减，因此本公开示例性实施例所提出的空穴注入层结构具有低电压、高效率、长寿命的优势。
表3、不同空穴注入层结构的性能比较
Figure PCTCN2020118588-appb-000015
表4为OLED中第二空穴注入层不同掺杂比例的比较结果。三个对比结构均为ITO/HIL1/HIL2/HTL/EBL/EML/HBL/ETL/EIL/Mg:Ag，空穴注入层采用本公开示例性实施例的双注入层结构，HIL1包括第一主体材料A1，HIL2包括第二主体材料A2和客体材料B，客体材料B与第一主体材料A1相同。结构6中客体材料B的掺杂比例为5％，结构7中客体材料B的掺杂比例为10％，结构8中客体材料B的掺杂比例为20％。如表4所示，第二空穴注入层HIL2中客体材料B掺杂比例改变，电压没有明显变化，效率没有明显变化，寿命没有明显变化，说明本公开示例性实施例OLED性能随掺杂比例变化较小，掺杂比例大于5％后不会导致子像素间串扰，有效避免了P型掺杂结构掺杂比例低的问题。相对于OLED性能随掺杂比例变化较大的P-doping结构，本公开示例性实施例的双层注入结构避免了因掺杂比例变化导致像素不良的现象。
表4、第二空穴注入层不同掺杂比例的性能比较
Figure PCTCN2020118588-appb-000016
本公开示例性实施例提供了一种OLED，空穴注入层采用双注入层结构，第一空穴注入层采用单一材料结构，第二空穴注入层采用不同于P型掺 杂的掺杂结构，可以有效改善空穴注入材料的结晶性和热稳定性，减少蒸镀制程不良，实现稳定的注入性能，有效降低器件电压，提升器件效率和使用寿命。由于掺杂材料不同于P型掺杂材料，因而避免了P型掺杂结构掺杂比例较低的问题，掺杂比例较大(大于5％)不会导致子像素间串扰，有效提高了显示品质。本公开示例性实施例提供的空穴注入层，制备工艺兼容性好，不会增加蒸镀腔室，具备良好的量产性。
本公开还提供了一种显示装置，包括前述的有机电致发光器件。显示装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、车载显示器、手表、手环等任何具有显示功能的产品或部件。
虽然本公开所揭露的实施方式如上，但所述的内容仅为便于理解本公开而采用的实施方式，并非用以限定本公开。任何所属领域内的技术人员，在不脱离本公开所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本申请的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (20)

  1. 一种有机电致发光器件，包括阳极、阴极以及设置在所述阳极和阴极之间的发光层，所述阳极和发光层之间设置有第一空穴注入层和第二空穴注入层，所述第一空穴注入层设置在阳极与第二空穴注入层之间；所述第一空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种，所述第二空穴注入层包括芳胺类化合物、醌类衍生物、酮类衍生物、芴酮类衍生物和二氧硼杂环己二烯及其衍生物中的至少一种；
    所述第一空穴注入层和第二空穴注入层的结构不同，所述结构不同包含如下任意一种或多种：所述第一空穴注入层和第二空穴注入层的厚度不同，所述第一空穴注入层和第二空穴注入层的材料结构不同，所述第一空穴注入层和第二空穴注入层的材料数量种类数不同，所述第一空穴注入层和第二空穴注入层的材料能级不同；
    所述材料结构包括材料的化学式，所述材料数量包括材料的种类数，所述材料能级包括材料的最高占据分子轨道HOMO能级和材料的最低未占分子轨道LUMO能级。
  2. 根据权利要求1所述的有机电致发光器件，其中，
    所述第一空穴注入层和第二空穴注入层所包含的材料种类数均不超过三种。
  3. 根据权利要求1所述的有机电致发光器件，其中，所述第二空穴注入层包括第二主体材料和掺杂在所述第二主体材料中的客体材料，所述第二主体材料和所述客体材料中的一个包括芳胺类化合物，另一个包括醌类衍生物、酮类衍生物、芴酮类衍生物或二氧硼杂环己二烯及其衍生物，所述第二主体材料和客体材料满足：
    -1.5eV＜│LUMO(B)│-│HOMO(A2)│＜1.5eV；
    其中，LUMO(B)为所述客体材料的最低未占分子轨道LUMO能级，HOMO(A2)为所述第二主体材料的最高占据分子轨道HOMO能级。
  4. 根据权利要求3所述的有机电致发光器件，其中，所述客体材料还满 足：
    │HOMO(B)│≥6eV，│LUMO(B)│≥4eV；
    HOMO(B)为所述客体材料的最高占据分子轨道HOMO能级。
  5. 根据权利要求3所述的有机电致发光器件，其中，所述第二主体材料还满足：
    5eV≤│HOMO(A2)│≤6eV。
  6. 根据权利要求3所述的有机电致发光器件，其中，所述客体材料占所述第二空穴注入层的掺杂比例为1％至35％。
  7. 根据权利要求3所述的有机电致发光器件，其中，所述第一空穴注入层包括第一主体材料，所述第一主体材料与所述客体材料相同。
  8. 根据权利要求3所述的有机电致发光器件，其中，所述第一空穴注入层的厚度为1nm至3nm，所述第二空穴注入层的厚度为1nm到8nm。
  9. 根据权利要求3所述的有机电致发光器件，其中，所述芳胺类化合物的取代基团包括咔唑、甲基芴、螺芴、二苯并噻吩或呋喃。
  10. 根据权利要求3至9任一项所述的有机电致发光器件，其中，所述第二主体材料包括但不限于具有式(Ⅰ)结构的化合物：
    Figure PCTCN2020118588-appb-100001
    式(Ⅰ)中，Ar 1至Ar 4各自独立地为取代或未取代的具有5至50个环原子的芳基，L为经由取代或未取代的具有5至50个环原子的亚芳基构成的连接基团，或者，由多个取代或未取代的具有5至50个环原子的亚芳基与M1连接而获得的连接基团，M1为如下任意一种：单键、氧原子、硫原子、氮原子、具有1至20个碳原子的饱和或不饱和二价脂族烃基团。
  11. 根据权利要求10所述的有机电致发光器件，其中，Ar 1至Ar 4中至少一个选自具有如下结构中的任意一种：
    Figure PCTCN2020118588-appb-100002
    其中，R1至R25各自独立地为如下任意一种：氢原子、具有5至50个环原子的芳基、取代或未取代的具有1至50个碳原子的烷基、取代或未取代的具有1至50个碳原子的烷氧基、取代或未取代的具有6至50个环原子的芳烷基、取代或未取代的具有5至50个环原子的芳氧基、取代或未取代的具有5至50个环原子的芳硫基、取代或未取代的具有1至50个碳原子的烷氧羰基、被M2取代的具有5至50个环原子的芳基，M2为氨基、卤素原子、氰基、硝基、羟基或羧基。
  12. 根据权利要求3至9任一项所述的有机电致发光器件，其中，所述客体材料包括但不限于具有式(Ⅱ)结构的化合物：
    Figure PCTCN2020118588-appb-100003
    式(Ⅱ)中，Z为经取代或未经取代的苯环、吡啶环、噻吩环、喹啉、吲哚或噻吩并噻吩环；
    Ar 5为
    Figure PCTCN2020118588-appb-100004
    Ar 6为
    Figure PCTCN2020118588-appb-100005
    Y 1至Y 4各自独立地为N或C-R35；
    R31至R35各自独立地选自如下任意一种：氢、氘、卤素基团、腈基、经取代或未经取代的烷基、经取代或未经取代的卤代烷基、经取代或未经取代的烷氧基、经取代或未经取代的卤代烷氧基、经取代或未经取代的芳基、 经取代或未经取代的卤代芳基、经取代或未经取代的甲硅烷基、经取代或未经取代的杂环；
    X1和X2各自独立地选自如下结构中的任意一种：
    Figure PCTCN2020118588-appb-100006
    R41至R43各自独立地为如下任意一种：氢、氟代烷基、烷基、芳基和杂环基，R42和R43形成环。
  13. 根据权利要求3至9任一项所述的有机电致发光器件，其中，所述第二空穴注入层和发光层之间还设置有至少一层有机层，所述至少一层有机层中的载流子迁移率为10 -3cm 2/Vs至10 -5cm 2/Vs，和/或，所述至少一层有机层的导电率均小于或等于所述第一空穴注入层和第二空穴注入层的导电率。
  14. 根据权利要求13所述的有机电致发光器件，其中，所述至少一层有机层的材料与所述第二主体材料相同。
  15. 根据权利要求13所述的有机电致发光器件，其中，所述至少一层有机层为空穴传输层，所述空穴传输层的材料满足：
    5eV≤│HOMO(D)│≤6.5eV；
    HOMO(D)为所述空穴传输层的最高占据分子轨道HOMO能级。
  16. 根据权利要求3至9任一项所述的有机电致发光器件，其中，所述第二空穴注入层和发光层之间还设置有两层有机层，所述两层有机层中的载流子迁移率均为10 -3cm 2/Vs至10 -5cm 2/Vs，和/或，所述两层有机层的导电率均小于或等于所述第一空穴注入层和第二空穴注入层的导电率。
  17. 一种显示装置，包括权利要求1至16任一项所述的有机电致发光器件。
  18. 根据权利要求17所述显示装置，所述显示装置包括基板和形成于所述基板上的多个子像素，所述多个子像素包括所述有机电致发光器件；所述第一空穴注入层和第二空穴注入层的面积大致相等，且所述第一空穴注入层和第二空穴注入层在基板上的正投影均与至少两个子像素的发光区域在基板 上的正投影有交叠。
  19. 根据权利要求18所述显示装置，所述第一空穴注入层和第二空穴注入层的面积均大于所述发光层的面积。
  20. 根据权利要求18所述显示装置，所述子像素还包括像素驱动电路，至少部分子像素的发光层在基板上的正投影与所述像素驱动电路的驱动晶体管在基板上的正投影有交叠。
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