WO2022053345A1 - Source laser, système lidar et procédé de réglage d'une source laser - Google Patents

Source laser, système lidar et procédé de réglage d'une source laser Download PDF

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Publication number
WO2022053345A1
WO2022053345A1 PCT/EP2021/073894 EP2021073894W WO2022053345A1 WO 2022053345 A1 WO2022053345 A1 WO 2022053345A1 EP 2021073894 W EP2021073894 W EP 2021073894W WO 2022053345 A1 WO2022053345 A1 WO 2022053345A1
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Prior art keywords
laser diode
intensity
signal
laser
current
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PCT/EP2021/073894
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German (de)
English (en)
Inventor
Hubert Halbritter
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Osram Opto Semiconductors Gmbh
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Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to US18/044,388 priority Critical patent/US20230327402A1/en
Priority to CN202180055104.0A priority patent/CN116018732A/zh
Publication of WO2022053345A1 publication Critical patent/WO2022053345A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0246—Measuring optical wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J2009/0257—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods multiple, e.g. Fabry Perot interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J2009/028—Types
    • G01J2009/0288—Machzehnder
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • LIDAR Light Detection and Ranging
  • FMCW LIDAR systems frequency modulated continuous wave- modulated continuous wave LIDAR systems
  • laser light sources with correspondingly high power are required.
  • laser sources are being researched whose frequency can be easily modulated and which have an increased temperature stability of the emission wavelength.
  • the object of the present invention is to provide an improved laser source, an improved LIDAR system and an improved method for operating a laser source.
  • a laser source comprises a laser diode, a modulation device and a feedback device.
  • the modulation device includes a current source and is suitable for changing a current intensity that is impressed into the laser diode, with an emission frequency of the laser diode being changeable.
  • the return is suitable for changing a current strength impressed by the current source in the laser diode as a function of electromagnetic radiation emitted by the laser diode.
  • the feedback device includes an interferometer which is suitable for generating a signal from a measuring beam branched off from the emitted electromagnetic radiation, the intensity of which changes periodically as a function of an emission wavelength.
  • the feedback device is suitable for supplying the modulation device with a feedback signal dependent on the intensity in a predetermined wavelength range.
  • the feedback device has a large number of interferometers.
  • the measuring beam is divided into a large number of partial beams, each of which is fed to different interferometers.
  • the feedback device also includes a selection device which is suitable for selecting the signal of that interferometer with a linear dependence of the intensity on the wavelength.
  • the interferometer can be a Mach-Zehnder interferometer.
  • the interferometer can be a Fabry-Perot interferometer.
  • components of the feedback device can be integrated into a photonic chip.
  • the feedback device can have one or a large number of interferometers.
  • Interferometer components such as beam splitters or beam combiners rer can be implemented as fiber optic components, such as optical splitters or optical couplers.
  • the laser diode can be a surface emitting laser diode.
  • a LIDAR system includes the laser source as described above.
  • the LIDAR system can be implemented at least partially as an integrated optical circuit.
  • a method of controlling a laser source includes injecting a current into a laser diode, changing the current injected into the laser diode, thereby changing an emission frequency of the laser diode, and controlling the current injected into the laser diode as a function of electromagnetic radiation emitted by the laser diode radiation .
  • controlling the current level may include generating a signal that depends on the emission wavelength, generating a feedback signal from the signal, and controlling the current level using the feedback signal.
  • the laser diode can be a surface emitting laser diode.
  • FIG. 1A shows a schematic view of a laser source according to embodiments.
  • FIG. 1B shows elements of a laser source according to further embodiments.
  • FIG. 3A shows a schematic vertical cross-sectional view of a laser source according to embodiments.
  • FIG. 3B shows a schematic plan view of a laser source according to embodiments.
  • FIG. 4 illustrates a LIDAR system in accordance with embodiments .
  • Wafer or “semiconductor substrate” used in the following description may include any semiconductor-based structure that has a semiconductor surface. Wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base substrate 12, and other semiconductor structures 13. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, such as a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, such as a sapphire substrate.
  • a second semiconductor material such as a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, such as a sapphire substrate.
  • the semiconductor can be based on a direct or an indirect semiconductor material.
  • semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds through which example way, green or longer-wave light can be generated, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2Ü3, diamond, hexagonal BN and combinations of the materials mentioned.
  • the stoichiometric ratio of the compound semiconductor materials can vary.
  • Other examples of semiconductor materials may include silicon, silicon-germanium, and germanium.
  • the term "semiconductor" also includes organic semiconductor materials
  • substrate generally includes insulating, conductive, or semiconductor substrates.
  • lateral and horizontal as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be the surface of a wafer or a chip (die), for example.
  • the horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are grown.
  • vertical as used in this specification intends to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body.
  • the vertical direction can correspond to a growth direction when layers are grown, for example.
  • electrically connected means a low-impedance electrical connection connection between the connected elements.
  • the electrically connected elements do not necessarily have to be directly connected to one another. Further elements can be arranged between electrically connected elements.
  • electrically connected also includes tunnel contacts between the connected elements.
  • Fig. 1A shows a view of a laser source 10 according to embodiments.
  • the laser source 10 includes a laser diode 103 and a modulation device 140 .
  • the modulation device 140 has a current source 149 .
  • a current is impressed into the laser diode 103 via the current source 149 .
  • the modulation device 140 is suitable for changing the current strength that is impressed into the laser diode 103 .
  • an emission frequency of the laser diode 103 is changeable.
  • the laser source 10 also has a feedback device 109 .
  • the feedback device 109 is suitable for changing the current strength that is impressed into the laser diode as a function of the electromagnetic radiation that is emitted by the laser diode.
  • the laser diode 103 can represent a surface emitting laser diode (VCSEL, “Vertical Cavity Surface Emitting Laser”).
  • the laser diode 103 can also be a laser diode with an optical resonator that extends in a direction perpendicular to a growth direction of the semiconductor layers of the laser diode 103 .
  • the laser diode with such a horizontal resonator can have further deflection devices, for example reflecting surfaces, via which the emitted light beam 15 can be deflected in any way.
  • the current source 149 impresses a current into the laser diode 103 .
  • a small change in the impressed current for example in the range of a few pA, can change the wavelength in such a way that the frequency differences of the emitted radiation are in the MHz to GHz range. Due to the modulation of the applied current, there is a modulation of the charge carrier density, which leads to a change in the refractive index in the optical resonator. As a result, the wavelength is shifted. Furthermore, an increased charge carrier density causes an increase in temperature, which also leads to a change in the emission wavelength. Accordingly, the emission wavelength can be modulated in the MHz to GHz range.
  • a portion of the emitted beam 15 can be branched off as a measurement beam 16 .
  • the remaining portion of the emitted electromagnetic radiation remains as an object beam 19 .
  • the intensity of the measuring beam 16 can be less than 10% of the intensity of the emitted electromagnetic radiation 15 .
  • the intensity of the measuring beam 16 can be more than 1% of the emitted radiation 15 .
  • the measuring beam 16 is fed to a measuring device 104 .
  • a signal is generated from the measuring beam by the measuring device 104 , the intensity of which changes periodically as a function of the emission wavelength.
  • the feedback device 109 can be suitable for supplying the modulation device 140 with a feedback signal corresponding to an intensity in a predetermined wavelength range.
  • the measuring beam 16 is divided into partial beams 21, 24 and optionally into a reference measuring beam 112.
  • Each partial beam is fed to a different interferometer 118 .
  • the interferometer 118 can be implemented, for example, as a Mach-Zehnder interferometer, as shown in FIG. 1A.
  • the sub-beam 21, 24 is split using first beam splitters 107 into two sub-beams 22, 23 each.
  • the first and second sub-beams 22, 23 are finally combined again via a second beam splitter 108 via different optical path lengths and associated deflection mirrors 106.
  • the first beam splitter 107 can be a partially transparent mirror, for example.
  • the second beam splitter 108 is implemented, for example, as a Bragg mirror, one side of which shifts the phase of the reflected beam by 180°, but the other side does not. This causes constructive interference at one output and destructive interference at the other.
  • a beam I Cf i and a beam I Sf i are generated on the one hand.
  • the beam I Cf i is detected by a first photodetector 105i.
  • the second beam I Sf i is detected by a second photodetector 1052 .
  • the first ray I Cf i is a ray with an intensity proportional to cos 2 Acp/2 of the phase difference resulting from the difference in the different path lengths.
  • the second beam I Sf i has an intensity proportional to sin 2 Acp/2 of the phase difference.
  • the phase difference is as follows:
  • r is the confinement factor of the system, i.e. the ratio of the radiation component of the mode in the core and in the cladding region of the waveguide (typically ⁇ or approximately equal to 1) and X is the emission wavelength. That is, the phase difference and thus the argument of the sine and cosi nus function is wavelength dependent. Furthermore, the phase difference across AL depends on the path length difference between the two paths. As the temperature increases, the emission wavelength changes and with it the phase difference.
  • the measurement beam 16 is divided into a number of partial beams 21 , 24 which are each analyzed by a different interferometer 118 .
  • the interferometers 118 each split the partial beams 21 , 24 into a first and second sub-beam, each with a different optical path length.
  • the different interferometers 118 are dimensioned such that a different phase difference results for each interferometer.
  • a different course of the intensity as a function of the emission wavelength X is obtained for each of the split partial beams 21 , 24 with the associated interferometer. Since the course of the dependency as a function of the emission wavelength changes in the same way with the temperature for all interferometers, an exact wavelength stabilization for the laser itself is no longer necessary.
  • Fig. 2 shows an example of signals detected by detectors 105i, 1052, respectively.
  • the feedback device 109 has a selection device 110 or a controller which is suitable for selecting the signal from that pair of photodetectors 105i, ⁇ , 1054 which runs in a linear range.
  • the distance between two maxima can correspond to a frequency of 5 GHz, while the range corresponding to the modulated wavelength is about 1 GHz. Due to the fact that the measuring beam 16 is divided into different partial beams, each of which is fed to different interferometers 118 with different differences in the path length, there is at any given point in time an interferometer or a photodetector-detector pair 105i, 1054 in which the intensity increases linearly with the wavelength changes.
  • a current signal which corresponds to the measured intensity in the linear range is fed to the modulation device 140 .
  • the current intensity impressed by the current source 149 is regulated accordingly.
  • the emission wavelength is in a predetermined range.
  • a path length of the optical path can be in a range of 8 mm.
  • the optional reference measuring beam 112 can be used, for example, to measure the power of the signal. Since no periodic changes occur within the reference measurement beam 112 and the reference measurement beam is also independent of the wavelength, this signal can be used, for example, for calibration or as a monitor for the power or as a reference to the signals in FIG. 2 are used .
  • Fig. 1B shows an alternative embodiment of the interferometer 118 . Similar to Fig. 1A, the measurement beam 16 is divided into a number of partial beams 21 , 24 . So- then the partial beams are each fed to a Fabry-Perot interferometer.
  • Each Fabry-Perot interferometer comprises an optical resonator 131 and a first resonator mirror 132 and a second resonator mirror 133 on opposite sides of the optical resonator 131 .
  • the Fabry-Perot interferometers for the corresponding partial beams each have a different resonator length.
  • photodetectors 105i, 105 3 are each arranged at the exit end of the Fabry-Perot interferometer.
  • a periodically changing signal is also formed in the corresponding photodetector 105i, ⁇ , 105 3 off .
  • a length of a Fabry-Perot resonator can be about 2 cm.
  • that partial beam can be selected for which the measured intensity corresponds to a predetermined percentage of the reference measuring beam 112. In this range, a linear dependence of the intensity on the wavelength can be assumed.
  • Fig. 2 shows the intensity that is detected by two detectors on a Mach-Zehnder interferometer.
  • the intensity detected by photodetector 105i is proportional to cos
  • the intensity detected by photodetector 105 3 is proportional to sin 2 Acp/2 .
  • Acp corresponds to the phase difference that results from the different path lengths and is therefore proportional to the wavelength of the emitted radiation.
  • a wavelength range in which the intensity is linear is determined in each case in that the intensity Ii at the first photodetector 105i and the intensity I 3 at the second photodetector 105 3rd is proven.
  • the selection device 110 is suitable for reading out the signals from all the photodetectors and for comparing them with one another in pairs. If the intensities of a pair of detectors match, it is assumed that there is a linear increase or decrease in intensity.
  • the signal from the corresponding photodetectors is then used to control the modulation device 140 . In this way, active feedback control for the modulation device 140 takes place.
  • any wavelength drift or manufacturing tolerances of the laser Bragg mirror compared to the Mach-Zehnder interferometer cavity length over temperature are compensated for by measuring the signal from multiple Mach-Zehnder interferometers.
  • the signal from that linear Mach-Zehnder interferometer is used to control the current applied to the laser diode 103 .
  • Fig. 3A shows a vertical cross-sectional view of the laser light source 10 according to embodiments.
  • a waveguide arrangement 111 is arranged over any substrate 115 , for example an insulating substrate.
  • a laser diode 103 is arranged above the substrate 115 . Radiation emitted by the laser diode 103 is coupled into the waveguide 111 via deflection mirrors 106 , for example.
  • the material of the waveguides can include SiO or SiN, for example. With emission wavelengths of the laser diode 103 of >1000 nm, Si can also be used as the material for the waveguides 111 .
  • the laser diode 103 can be suitable for emitting electromagnetic radiation with a wavelength of more than 850 nm, for example 905 nm.
  • a highly reflective coating can be arranged on one side of the laser diode, while a reflection-reducing coating is provided on another side of the laser diode.
  • the electromagnetic radiation that is coupled out can be coupled into the waveguide 111 via the deflection mirrors 106 , for example.
  • the deflection mirror 106 can also be a prism or a suitable grating.
  • a portion of the emitted beam 15 is branched as a measurement beam 16 .
  • the measuring beam can be approx. 1 to 10% of the emitted beam 15 include.
  • the measuring beam 16 can be divided into different partial beams and a reference measuring beam 112 .
  • Fig. 3B shows a top view of the laser source 10 according to embodiments.
  • the laser source 10 includes a laser diode 103 and an array of waveguides 111 .
  • the waveguides 111 are arranged in order to divide part of the emitted electromagnetic radiation into a measurement beam 16 and an object beam 19 .
  • components of the interferometer are realized by waveguides 111 .
  • the measurement beam 16 is split in a corresponding manner as described above.
  • corresponding integrated optical elements can be used to split the beams and later combine them again.
  • the functionalities can be implemented by splitters, couplers or coupled waveguides.
  • the different path lengths of the waveguides of a Mach-Zehnder interferometer or a Fabry-Perot interferometer can be designed to save space by designing the waveguides in a meandering shape or by rolling them up.
  • the one shown in FIG. 3B shown waveguide structure by a photolithographic structuring method, by which, for example, the waveguide material, such as Si, SiO or SiN is structured, are produced.
  • the waveguide material such as Si, SiO or SiN is structured
  • a laser diode can be combined with various optical components, which represent an interferometer, for example.
  • the optical components can be implemented, for example, in the form of an optical or photonic chip.
  • the optical components can represent an integrated optical circuit.
  • the laser diode can be integrated with the integrated optical circuit.
  • the interferometer in an approximately linear range of intensity as a function of wavelength, regardless of the emission wavelength of the laser diode, so that it can be used as an FM-AM demodulator. In this way, temperature fluctuations and manufacturing tolerances can be compensated for automatically.
  • the signal from the photodetectors is converted into a control signal for the modulation device 140 .
  • the laser source described can, for example, in a
  • FIG. 4 shows a schematic View of a LIDAR system 20 .
  • the one in Fig. The LIDAR system 20 shown in FIG. 4 is an FMCW (“Frequency Modulated Continuous Wave”) LIDAR system.
  • the laser radiation emitted by the laser source 10 has a changing wavelength.
  • the emitted radiation is divided into a reference beam 18 and an object beam 19 by a beam splitter 121 .
  • the object beam 19 is radiated onto an object 25 and reflected by it.
  • the reflected beam 17 is produced in the process.
  • the reflected beam 17 is formed in a suitable manner by receiving optics 128 and a collimator 127 and fed to a detector 150 via mirror 123 and further optics 125 .
  • the reference beam 18 is fed directly to the detector 126 via the mirror 123 and the optics 125 .
  • the reflected beam 17 is superimposed on the reference beam 18, which are mutually coherent, a mixed signal is produced at the detector 126 from which, for example, the distance and other information about the detected object can be evaluated.
  • f L o corresponds to the frequency of the object beam 19 or of the reference beam 18 and f a corresponds to the frequency of the reflected beam 17 .
  • the frequency of the reflected beam 17 is delayed due to the propagation time difference that results when it is reflected at the object 25 .
  • the difference between f a and f L o is a measure of the motion and distance of the object 25 .
  • the difference frequency of the reference beam 18 and the reflected beam 17 is determined by the photodetector 126 .
  • the LIDAR system or parts thereof can be implemented as an integrated optical circuit.
  • components of the LIDAR systems can be realized as corresponding fiber optic components.
  • a method for controlling a laser source includes impressing (S100) a current intensity into a laser diode and changing (S110) a current intensity impressed into the laser diode, as a result of which an emission frequency of the laser diode is changed.
  • the method also includes regulating (S120) the current intensity impressed into the laser diode as a function of electromagnetic radiation emitted by the laser diode.
  • controlling (S120) the current level may include generating a signal (S130) dependent on the emission wavelength and generating (S140) a feedback signal from the signal.
  • the current level is then regulated using the feedback signal. The regulation is carried out continuously.
  • LIDAR system first sub-beam first sub-beam second sub-beam second sub-beam
  • Receiving optics optical resonator first resonator mirror second resonator mirror Modulation device Current source Impressing a current level Changing the current level Controlling the current level Generating a signal Generating a feedback signal

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  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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Abstract

Source laser (10) comprenant une diode laser (103), un dispositif de modulation (140) et un dispositif de rétroaction (109). Le dispositif de modulation (140) comprend une source de courant (149) et convient pour modifier une intensité de courant appliquée à la diode laser (103), la fréquence d'émission de la diode laser (103) pouvant être modifiée. Le dispositif de rétroaction (109) convient pour modifier l'intensité de courant appliquée par la source de courant (149) à la diode laser (103) en fonction du rayonnement électromagnétique (15) émis par la diode laser (103).
PCT/EP2021/073894 2020-09-09 2021-08-30 Source laser, système lidar et procédé de réglage d'une source laser WO2022053345A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US18/044,388 US20230327402A1 (en) 2020-09-09 2021-08-30 Laser source, lidar system and method for controlling a laser source
CN202180055104.0A CN116018732A (zh) 2020-09-09 2021-08-30 激光源、lidar系统和用于调节激光源的方法

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Application Number Priority Date Filing Date Title
DE102020123560.7A DE102020123560A1 (de) 2020-09-09 2020-09-09 Laserquelle, lidar-system und verfahren zur regelung einer laserquelle
DE102020123560.7 2020-09-09

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WO2022053345A1 true WO2022053345A1 (fr) 2022-03-17

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US20030107746A1 (en) * 2001-12-11 2003-06-12 Altitun Ab Robust wavelength locker for control of laser wavelength
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