WO2022053349A2 - Composant à semi-conducteur opto-électronique, dispositif à semi-conducteur opto-électronique et système lidar - Google Patents

Composant à semi-conducteur opto-électronique, dispositif à semi-conducteur opto-électronique et système lidar Download PDF

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Publication number
WO2022053349A2
WO2022053349A2 PCT/EP2021/073957 EP2021073957W WO2022053349A2 WO 2022053349 A2 WO2022053349 A2 WO 2022053349A2 EP 2021073957 W EP2021073957 W EP 2021073957W WO 2022053349 A2 WO2022053349 A2 WO 2022053349A2
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Prior art keywords
optoelectronic semiconductor
semiconductor component
laser diode
waveguide
lidar system
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PCT/EP2021/073957
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German (de)
English (en)
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WO2022053349A3 (fr
Inventor
Hubert Halbritter
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Osram Opto Semiconductors Gmbh
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Publication of WO2022053349A2 publication Critical patent/WO2022053349A2/fr
Publication of WO2022053349A3 publication Critical patent/WO2022053349A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Definitions

  • LIDAR Light Detection and Ranging
  • FMCW LIDAR systems frequency modulated continuous wave- modulated continuous wave LIDAR systems
  • laser light sources with correspondingly high power are required.
  • the object of the present invention is to provide an improved optoelectronic semiconductor component, an improved optoelectronic semiconductor device and an improved LIDAR system.
  • An optoelectronic semiconductor component comprises a semiconductor layer stack, in which a surface-emitting laser diode is arranged, and a modulation device, which has a current source.
  • the modulation device is suitable for changing a current intensity impressed into the surface-emitting laser diode, as a result of which an emission wavelength can be changed.
  • the surface-emitting laser diode can have a large number of laser elements stacked vertically one on top of the other.
  • the optoelectronic semiconductor component can also include a waveguide that is suitable for absorbing electromagnetic radiation emitted by the surface-emitting laser diode.
  • the waveguide can be a single-mode waveguide.
  • the waveguide can be integrated into a carrier.
  • the waveguide can be part of an integrated optical circuit.
  • the optoelectronic semiconductor component can also contain an optical isolator between the surface-emitting laser diode and the waveguide.
  • An optoelectronic semiconductor device has a multiplicity of optoelectronic semiconductor components as described above. Components of the optoelectronic semiconductor components are arranged on a common carrier. The optoelectronic semiconductor components are stacked one on top of the other, for example in a direction perpendicular to an emission direction of the optoelectronic semiconductor components.
  • a LIDAR system has the optoelectronic semiconductor component as described above, a beam splitter device and a detector.
  • a LIDAR system has the optoelectronic semiconductor device as described above. wrote, a beam splitter and a detector.
  • the photodetector can be a Ge detector.
  • An emission wavelength of the optoelectronic semiconductor component can be greater than 1100 nm.
  • the LIDAR system can be implemented at least partially as an integrated optical circuit.
  • the beam splitter device can be a beam splitter, for example, or else a fiber-optic component that causes the beam to be split, for example a splitter.
  • Fig. 1 shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with embodiments.
  • Fig. 2 shows a cross-sectional view of an optoelectronic semiconductor component in accordance with further embodiments.
  • FIG. 3A shows a schematic view of an optoelectronic semiconductor component in accordance with further embodiments.
  • Fig. FIG. 3B shows a schematic view of an optoelectronic semiconductor component in accordance with further embodiments.
  • Fig. 4 shows a LIDAR system according to embodiments.
  • FIG. 5A shows a schematic view of an optoelectronic semiconductor component in accordance with embodiments.
  • Fig. 5B shows a schematic structure of a LIDAR system according to further embodiments.
  • Wafer or “semiconductor substrate” used in the following description may include any Include semiconductor-based structure that has a semiconductor surface. Wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base substrate 12, and other semiconductor structures 13. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, such as a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, such as a sapphire substrate.
  • a second semiconductor material such as a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, such as a sapphire substrate.
  • the semiconductor can be based on a direct or an indirect semiconductor material.
  • semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds through which For example, green or longer-wave light can be generated, such as GaAsP, AlGalnP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, Al InGaAs, SiC, ZnSe, ZnO, Ga2Ü3, diamond, hexagonal BN and combinations of the materials mentioned.
  • the stoichiometric ratio of the compound semiconductor materials can vary.
  • Other examples of semiconductor materials may include silicon, silicon-germanium, and germanium.
  • the term "semiconductor" also includes organic semiconductor materials
  • substrate generally includes insulating, conductive, or semiconductor substrates.
  • vertical as used in this specification is intended to describe an orientation that is essentially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can correspond to a growth direction when layers are grown, for example.
  • lateral and “horizontal” as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be the surface of a wafer or a chip (die), for example.
  • the horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are grown.
  • electrically connected means a low-impedance electrical connection between the connected elements.
  • the electrically connected elements do not necessarily have to be directly connected to one another. Further elements can be arranged between electrically connected elements.
  • electrically connected also includes tunnel contacts between the connected elements.
  • Fig. 1 shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with embodiments.
  • the optoelectronic semiconductor component 10 comprises a semiconductor layer stack 109 in which a surface-emitting laser diode 103 is arranged.
  • the surface-emitting laser diode 103 represents, for example, a VCSEL (“Vertical Cavity Surface Emitting Laser”). This comprises a first resonator mirror 110, a second resonator mirror 120 and an active zone 125 for beam generation.
  • the surface emitting laser diode 103 has an optical cavity formed between the first and second cavity mirrors 110 , 120 .
  • the optical resonator extends in a vertical direction.
  • the first and the second resonator mirror 110, 120 can each be designed as a DBR layer stack ("distributed Bragg reflector") and have a large number of alternating thin layers of different refractive indices.
  • the thin layers can each be made of a semiconductor material or of a
  • the layers can alternately have a high refractive index (n>3.1 when using semiconductor materials, n>1.7 when using dielectric materials) and a low refractive index (n ⁇ 3.1 when using semiconductor materials, n ⁇ 1.7 when using dielectric materials).
  • the layer thickness can be X/4 or a multiple of X/4, where X indicates the wavelength of the light to be reflected in the corresponding medium.
  • the first or the second A resonator mirror can have, for example, 2 to 50 individual layers ke of the individual layers can be about 30 to 150 nm, for example 50 nm.
  • the layer stack can also contain one or two or more layers that are thicker than about 180 nm, for example thicker than 200 nm.
  • the first resonator mirror 110 can contain semiconductor layers of the first conductivity type, for example p-type.
  • the second resonator mirror 120 can have semiconductor layers of two th conductivity type, for example n-type included.
  • the first and/or the second resonator mirror 110 , 120 can be constructed from dielectric layers.
  • semiconductor layers of the first conductivity type can be arranged between the first resonator mirror 110 and the active zone 125 .
  • semiconductor layers of the second conductivity type can be arranged between the second resonator mirror 120 and the active zone 125 .
  • the active zone 125 can have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation.
  • Quantum well structure has no meaning here with regard to the dimensionality of the quantization. It thus includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.
  • the materials of the active zone can contain 125 GaAs.
  • Active zone materials may include GaN or InP.
  • the surface emitting laser diode 103 can further have an aperture stop 115 arranged in the semiconductor layer stack 109 .
  • the aperture stop 115 may be positioned adjacent to the active zone 125 .
  • the aperture stop 115 is, for example, insulating and limits the flow of current and thus the injection of charge carriers in the area between the bordering parts of the aperture stop 115 .
  • the aperture stop can be round or elliptical. A symmetrical and direction-independent beam formation takes place through a round aperture diaphragm.
  • an emitted Light beam have a preferred direction that corresponds, for example, to the longitudinal direction of the ellipse.
  • the first resonator mirror 110 is formed over a substrate 100 , for example.
  • the first resonator mirror 110 can be contacted, for example, via a first contact element 130 and optionally via the substrate 100 .
  • the first contact element 130 can be arranged on that side of the substrate 100 which is remote from the first resonator mirror 110 .
  • a laser emission can be brought about by impressing a current via the first contact element 130 and a second contact element 135 .
  • the second contact element can be formed in electrical contact with the second resonator mirror 120 .
  • the optoelectronic semiconductor component 10 also has a modulation device 140 .
  • the modulation device 140 has a current source 149 which injects a current into the surface-emitting laser diode 103, as has been described above.
  • the modulation device 140 can be suitable for modulating the impressed current, for example in the range of a few pA. Due to the modulation of the applied current, there is a modulation of the charge carrier density, which leads to a change in the refractive index in the optical resonator. As a result, the wavelength is shifted. Furthermore, an increased charge carrier density causes an increase in temperature, which also leads to a change in the emission wavelength. Accordingly, the emission wavelength can be modulated in the MHz to GHz range.
  • FIG. 1 shows a line width of 5 MHz and emit a power of 10 mW.
  • FIG. 2 shows a schematic cross-sectional view of an optoelectronic semiconductor component, in which the surface-emitting laser diode 103 comprises a multiplicity of laser elements 122 .
  • a large number of individual laser elements 122 are arranged between a first resonator mirror 110 and a second resonator mirror 120 .
  • the individual laser elements 122 are connected to one another via tunnel junctions.
  • the semiconductor layer stack 109 thus has a large number of active zones 125 which are connected to one another, for example via tunnel junctions 127 .
  • the semiconductor layer stack 109 can have more than three, for example about six or more than six laser elements 122 .
  • the laser elements 122 can furthermore have suitable semiconductor layers of the first and second conductivity type, each of which is adjacent to the active zone 125 and connected to it.
  • the tunnel junctions 127 can each have sequences of p ++ -doped layers and n ++ -doped layers, via which the individual laser elements 122 can be connected to one another.
  • the p ++ and n ++ doped layers are reverse connected to the associated laser elements 122 .
  • the layer thicknesses of the individual semiconductor layers of the laser elements 122 are dimensioned in such a way that the tunnel junctions 127 are arranged, for example, at nodes of the standing wave that forms. In this way, the emission wavelength of the surface-emitting laser diode 103 can be stabilized.
  • the sequence of very highly doped layers of the first and second conductivity type and optionally intermediate layers represents a tunnel diode or a tunnel junction. Using these tunnel diodes, the respective laser elements 122 can be connected in series.
  • the ones shown in Fig. The surface-emitting laser diode shown in FIG. 2 with a stack of several, for example more than five, for example eight, laser elements 122 can emit, for example, electromagnetic radiation with a line width of 500 kHz.
  • the radiated power can be up to 80 mW. By selecting an appropriate number of laser elements 122, the radiated power can be scaled.
  • Figs. 1 and 2 can be realized surface-emitting laser diodes shown in the GaAs material system.
  • wavelengths greater than 900 or 1100 nm can be realized.
  • the surface-emitting laser diodes can also be based on the InP material system. In this case, for example, wavelengths greater than 1550 nm can be emitted.
  • Fig. 3A shows an optoelectronic semiconductor device 10 according to further embodiments.
  • the surface emitting laser diode 103 shown, for example, in FIG. 1 or 2 is combined with a waveguide 102 .
  • the surface-emitting laser diode 103 is formed in a semiconductor layer stack 109 .
  • a modulation device 140 (not shown in FIG. 3A) is provided.
  • the emitted light beam 16 is in the waveguide 102 coupled .
  • the waveguide 102 is designed as a single-mode or single-mode waveguide. In this way, the wavefronts of the electromagnetic radiation emitted by the surface-emitting laser diode 103 can be aligned particularly effectively.
  • the optical I solator 103 can be arranged.
  • Fig. 3B shows an optoelectronic semiconductor component 10 in which the beam 16 emitted by the surface-emitting laser diode 103 is coupled into the waveguide 102 via a deflection device 105 .
  • the deflection device can be a prism or a grating.
  • the semiconductor layer stack 109 in which the surface-emitting laser diode 103 is arranged can also include a substrate 100 , for example a growth substrate for the layers of the semiconductor layer stack 109 .
  • the components of the semiconductor device can be integrated into a common carrier 107 .
  • the waveguide 102 optionally the optical isolator 104 and optionally the deflection device
  • optical 105 may be formed on a common carrier 107 . According to embodiments, further optical components can be integrated into the carrier 107 .
  • the waveguide 102 can be part of an integrated optical circuit, through which different functionalities can be provided.
  • the surface-emitting laser diode 103 emits electromagnetic radiation with a wavelength greater than 1100 nm, for example, in cases where the surface-emitting laser diode 103 is realized in the GaAs or InP material system, Si waveguides can be used, for example.
  • the energy of the emitted wavelength is less than the bandgap energy of silicon, Si waveguides can be used.
  • the waveguides can also be made of SiN or SiO.
  • the waveguides can be implemented using glass fiber cables.
  • wavelengths of up to 1800 nm can be detected.
  • the optoelectronic semiconductor component 10 described here can be used as a radiation source, which emits electromagnetic radiation with a wavelength greater than 1000 nm. In this case, eyes can be prevented from being damaged, for example, by the emitted electromagnetic laser radiation.
  • Fig. 4 shows a schematic view of a LIDAR system 150 .
  • the LIDAR system 150 shown in FIG. 4 is an FMCW LIDAR system.
  • the laser radiation emitted by the optoelectronic semiconductor component 10 has a changing wavelength due to the modulation by the modulation device 140 .
  • the emitted radiation is divided into a reference beam 18 and an object beam 19 by a beam splitter 157 .
  • the object beam 19 is radiated onto an object 156 .
  • the reflected beam 17 is produced in the process.
  • the reflected beam 17 is suitably shaped and transposed by receiving optics 152 and collimator 153 Mirror 158 and another optics 155 fed to a detector 160, for example a photodetector.
  • the reference beam 18 is fed directly to the detector 160 via the mirror 158 and the optics 155 .
  • a mixed signal is produced at the detector 160, from which, for example, the distance and other information about the detected object can be evaluated.
  • f L o corresponds to the frequency of the object beam 19 or the reference beam 18 and f a corresponds to the frequency of the reflected beam 17.
  • the frequency of the reflected beam 17 is delayed due to the transit time difference that results from reflection on the object 156.
  • the difference between f a and f L o is a measure of the movement and the distance of the object 156.
  • the difference frequency of the reference beam 18 and the reflected beam 16 is determined by the detector 160.
  • the detector can detect wavelengths greater than 1000 nm and be designed as a Ge detector.
  • the object beam 19 is moved by the scanning or deflection unit 154 in order to scan a larger-area object 156 .
  • the deflection or scanning unit 154 can be implemented as a mirror.
  • the deflection or scanning unit can also be an optical phase array ("Optical Phase Array”), in which the Optical Phase Array
  • Waveguide is divided into different waveguides of different path lengths and thus result in laser beams of different phase. In this way the scanning surface of the object beam 19 can be enlarged without requiring a movable scanning mirror.
  • components of the LIDAR system can be implemented using suitable fiber optic components.
  • the LIDAR system or part of the LIDAR system can be implemented as an integrated optical circuit.
  • the optoelectronic semiconductor component can be provided as a so-called single-channel device, which comprises an optoelectronic semiconductor component as described above with an associated waveguide. According to further embodiments, these individual optoelectronic semiconductor components 10 can be combined to form an optoelectronic semiconductor device 20 .
  • FIG. 5A shows a view of an optoelectronic semiconductor device according to embodiments.
  • the optoelectronic semiconductor device 20 has a plurality of optoelectronic semiconductor components 10 as described above.
  • the optoelectronic semiconductor components 10 can be stacked one above the other in a z-direction perpendicular to the emission direction of the electromagnetic radiation.
  • each of the optoelectronic semiconductor components 10 additionally includes a waveguide 102 and optical components 106 which are arranged, for example, on a common carrier 107 .
  • an object 156 having a specific size can be detected.
  • the one shown in FIG. 4 illustrated sampling and scanning unit 154 are dispensed with.
  • the individual surface-emitting laser diodes 103 are very inexpensive, such an optoelectronic semiconductor device 20 can be implemented at low cost.
  • the LIDAR system or a part of the LIDAR system as an integrated optical circuit with the in Fig. 5A can be realized.
  • the emission wavelength of the optoelectronic semiconductor component can be shifted continuously by impressing a variable current intensity.
  • a control device 121 can also be provided, which controls the current to a value such that a desired wavelength range is emitted. In this way, for example, the emission wavelength can be stabilized when temperatures rise.
  • Fig. 5B shows a schematic view of a LIDAR system according to further embodiments.
  • the illustrated LIDAR system 150 has an optoelectronic semiconductor component 10 with a modulation device 140 .
  • an optical isolator 104 can be provided. A reflection of electromagnetic radiation into the surface-emitting laser diode can be prevented or suppressed by the optical isolator 104 .
  • a portion of the emitted laser radiation 16 can be branched off as a measurement beam 15 using a first beam splitter 108 .
  • the measuring beam 15 is fed to a control device 121 which is suitable for determining a control signal 14 from the frequency of the measuring beam.
  • the control signal 14 is supplied to the modulation device 140 and is used to control the current intensity impressed into the surface-emitting laser diode 103 .
  • a second beam splitter 111 splits part of the emitted beam 16, as previously shown in FIG. 4 shown , partitioned and radiated onto an object 156 as the first object beam 191 .
  • the first partial beam 171 then reflected by the object 156 is combined with the reference beam 18 or the first reference partial beam 181, similar to that in FIG. 4 previously described, coherently superimposed and mixed. This can be done via a coupling device 114 .
  • the mixed signal can be fed to different photodetectors 116 , 117 in each case.
  • a balanced receiver structure can result in this way.
  • the phase fronts between the photodetectors 116 , 117 can be shifted by 180°.
  • DC components can be eliminated from equation (1) described above.
  • the (i a +i L o ) > term from equation (1) can be eliminated.
  • part of the reference beam 18 can additionally be split off by a third beam splitter 112 .
  • a polarization direction of this divided second partial reference beam 182 can be shifted by 90° by a polarization-changing element 113 .
  • the second reference partial beam 182 is coherently superimposed and mixed with a second reflected partial beam 172 in the coupling device 114 . This mixed signal is detected by the third and, if necessary, the fourth photodetector 118 and 119 when using the "balanced receiver" structure.
  • the DC component from equation (1) above can be compensated for when the phase fronts are shifted.
  • the second partial reference beam 182 with, for example, a polarization direction rotated by 90°, polarization-changing effects can be taken into account in the reflection at the object 156 .
  • the polari- sation changing element 113 can also be omitted.
  • the third and fourth photodetectors 118, 119 are optional.
  • control device 121 can include a demodulator, which determines a changing current signal from a changing emission frequency. At a selected point, a small change in frequency causes a small change in current. Using this small current change, the current intensity impressed on the surface emitting laser diode 103 can be modulated.
  • FIG. 5B that shown in FIG. 5B described system or parts of the system can be realized as an integrated optical circuit.
  • components of the system can be implemented as fiber optic elements.

Abstract

Composant à semi-conducteur opto-électronique (10) comprenant un empilement de couches de semi-conducteur (109) dans lequel sont agencés une diode laser (103) à émission de surface et un dispositif de modulation (140) qui présent une source de courant (149). Le dispositif de modulation (140) convient pour modifier l'intensité de courant appliquée à la diode laser (103) à émission de surface, ce qui permet de faire varier la longueur d'onde d'émission.
PCT/EP2021/073957 2020-09-09 2021-08-31 Composant à semi-conducteur opto-électronique, dispositif à semi-conducteur opto-électronique et système lidar WO2022053349A2 (fr)

Applications Claiming Priority (2)

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