WO2022042051A1 - 基板及其制造方法、显示装置及其制造方法 - Google Patents
基板及其制造方法、显示装置及其制造方法 Download PDFInfo
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- 239000010931 gold Substances 0.000 claims description 24
- 239000011135 tin Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
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- 239000000463 material Substances 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 229910000743 fusible alloy Inorganic materials 0.000 claims description 18
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
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- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 4
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 4
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- 238000000151 deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 4
- 229910000597 tin-copper alloy Inorganic materials 0.000 claims description 4
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 claims description 3
- JVCDUTIVKYCTFB-UHFFFAOYSA-N [Bi].[Zn].[Sn] Chemical compound [Bi].[Zn].[Sn] JVCDUTIVKYCTFB-UHFFFAOYSA-N 0.000 claims description 3
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
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- 229910002058 ternary alloy Inorganic materials 0.000 claims description 3
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
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- 230000005496 eutectics Effects 0.000 abstract description 16
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- 230000009286 beneficial effect Effects 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910018471 Cu6Sn5 Inorganic materials 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
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- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-AKLPVKDBSA-N lead-210 Chemical compound [210Pb] WABPQHHGFIMREM-AKLPVKDBSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
Description
Claims (15)
- 一种基板,其特征在于,包括衬底,在所述衬底上设有用于键合电子元件的至少两个键合焊盘,所述电子元件上设有至少两个引脚;在所述键合焊盘的远离所述衬底的一侧设有保护层,所述保护层在正对每个所述键合焊盘的位置设有开口区,以暴露出所述键合焊盘的部分表面;在所述开口区内设有低熔点合金材料形成的键合结合层,所述低熔点合金材料能够在第一预定温度下熔化,以将所述键合焊盘与所述引脚键合。
- 根据权利要求1所述的基板,其特征在于,所述低熔点合金材料的材料与所述键合焊盘、所述引脚的材料之间满足以下关系:所述低熔点合金材料在所述第一预定温度下熔化后析出金属离子,所述金属离子与所述键合焊盘、所述引脚的材料发生反应而形成化合物。
- 根据权利要求1所述的基板,其特征在于,所述低熔点合金材料选用以熔点低于预定值的低熔点金属为主体,掺杂银、铜、铋、锌、铟、锑、铅中至少一种金属元素所组成的低熔点合金材料。
- 根据权利要求3所述的基板,其特征在于,所述低熔点金属包括锡,所述低熔点合金材料包括:锡银合金、锡银铜合金、锡锌合金、锡锌铋合金、锡铋合金、锡铋银合金、锡铜合金、以及锡铜合金掺杂镍或金或银形成的三元合金中的至少一种。
- 根据权利要求4所述的基板,其特征在于,所述键合焊盘的材料选用金、银、铜、锡中的至少一种金属材料;所述引脚的材料选用金、银、铜、锡中的至少一种金属材料。
- 根据权利要求1所述的基板,其特征在于,所述键合结合层在垂直于所述衬底方向上的厚度为0.5~4μm。
- 根据权利要求1所述的基板,其特征在于,所述开口区在所述衬底上的正投影面积小于所述键合焊盘在所述衬底上的正投影面积。
- 根据权利要求1所述的基板,其特征在于,所述第一预定温度小于或等于250摄氏度。
- 一种显示装置,其特征在于,包括:如权利要求1至8任一项所述的基板;及,电子元件,所述电子元件上设有至少两个引脚;所述电子元件的所述引脚与所述基板的键合焊盘之间通过熔化的所述键合结合层进行键合。
- 根据权利要求9所述的显示装置,其特征在于,所述电子元件包括LED芯片。
- 一种基板的制造方法,其特征在于,用于制造如权利要求1至8任一项所述的基板,所述方法包括:提供一衬底;在所述衬底上形成至少两个键合焊盘;在所述键合焊盘的远离所述衬底的一侧形成保护层;对所述保护层进行图案化处理,以在正对每个所述键合焊盘的位置形成开口区;在所述保护层的远离所述衬底的一侧形成低熔点合金材料形成的低熔点合金层,其中所述低熔点合金层至少一部分位于所述开口区内,至少一部分覆盖在所述保护层上;对所述低熔点合金层进行图案化处理,以在所述开口区所正对的位置形成键合结合层。
- 根据权利要求11所述的方法,其特征在于,所述方法中,所述在所述保护层的远离所述衬底的一侧形成低熔点合金材料形成的低熔点合金层,具体包括:采用磁控溅射方式,在所述保护层的远离所述衬底的一侧沉积形成所述低熔点合金层。
- 根据权利要求11所述的方法,其特征在于,所述方法中,对所述低熔点合金层进行图案化处理,以在所述开口区所正对的位置形成键合结合层,具体包括:在所述低熔点合金层上涂覆一层光刻胶;采用掩膜板对光刻胶进行曝光,使光刻胶形成光刻胶未保留区域和光刻 胶完全保留区域,其中,光刻胶完全保留区域对应于所述键合结合层的图形所在区域,光刻胶未保留区域对应于所述键合结合层以外的区域;进行显影处理,光刻胶未保留区域的光刻胶被完全去除,光刻胶完全保留区域的光刻胶厚度保持不变,通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的低熔点合金层,形成所述键合结合层的图形;剥离剩余的光刻胶。
- 一种显示装置的制造方法,其特征在于,用于制造如权利要求9至10任一项所述的显示装置,所述方法包括:采用如权利要求11至13任一项所述的方法,得到基板;将所述电子元件转移至所述基板上,使所述电子元件的引脚与所述基板的键合焊盘上的键合结合层对准;加温至第二预定温度,以使所述键合结合层的低熔点合金材料熔化,而将所述键合焊盘与所述引脚键合,其中所述第二预定温度大于或等于所述第一预定温度。
- 根据权利要求14所述的方法,其特征在于,所述第二预定温度比所述第一预定温度高10~50摄氏度。
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CN114690461B (zh) * | 2022-03-21 | 2023-09-05 | Tcl华星光电技术有限公司 | 显示面板的制备方法及显示面板 |
CN218123408U (zh) * | 2022-05-26 | 2022-12-23 | 厦门市芯颖显示科技有限公司 | 一种显示面板及用于该显示面板的发光元件和背板 |
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- 2021-07-06 WO PCT/CN2021/104720 patent/WO2022042051A1/zh active Application Filing
- 2021-07-06 US US17/784,437 patent/US20230006107A1/en active Pending
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CN101567353A (zh) * | 2008-04-25 | 2009-10-28 | 三星电子株式会社 | 球栅阵列基板及其制造方法 |
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CN103026476A (zh) * | 2010-07-05 | 2013-04-03 | 安美特德国有限公司 | 在衬底上形成焊料合金沉积的方法 |
CN107887358A (zh) * | 2016-09-29 | 2018-04-06 | 三星电子株式会社 | 膜型半导体封装及其制造方法 |
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