WO2022030648A3 - ｐ型酸化物半導体及びｐ型酸化物半導体を含む半導体装置 - Google Patents

ｐ型酸化物半導体及びｐ型酸化物半導体を含む半導体装置 Download PDF

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WO2022030648A3
WO2022030648A3 PCT/JP2021/029575 JP2021029575W WO2022030648A3 WO 2022030648 A3 WO2022030648 A3 WO 2022030648A3 JP 2021029575 W JP2021029575 W JP 2021029575W WO 2022030648 A3 WO2022030648 A3 WO 2022030648A3
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type oxide
oxide semiconductor
semiconductor
device containing
semiconductor device
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PCT/JP2021/029575
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English (en)
French (fr)
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WO2022030648A2 (ja
Inventor
健太郎 金子
泰久 増田
静雄 藤田
勲 ▲高▼橋
勇次 加藤
亮平 菅野
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株式会社Flosfia
国立大学法人京都大学
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Priority claimed from JP2020134779A external-priority patent/JP2022030645A/ja
Priority claimed from JP2020134780A external-priority patent/JP2022030646A/ja
Application filed by 株式会社Flosfia, 国立大学法人京都大学 filed Critical 株式会社Flosfia
Publication of WO2022030648A2 publication Critical patent/WO2022030648A2/ja
Publication of WO2022030648A3 publication Critical patent/WO2022030648A3/ja

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Abstract

【課題】工業的に有用であり、かつ半導体特性に優れたｐ型の酸化物半導体を含む半導体装置を提供する。 【解決手段】　イリジウムと、周期律表の第１３族の金属から選択される少なくとも1つの金属とを含有する金属酸化物を主成分として含み、さらにドーパントを含有し、ホールキャリア密度が１．０×１０１９／ｃｍ３以下である、ｐ型酸化物半導体。
PCT/JP2021/029575 2020-08-07 2021-08-10 ｐ型酸化物半導体及びｐ型酸化物半導体を含む半導体装置 WO2022030648A2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020134779A JP2022030645A (ja) 2020-08-07 2020-08-07 ｐ型酸化物半導体及びｐ型酸化物半導体を含む半導体装置
JP2020-134779 2020-08-07
JP2020-134780 2020-08-07
JP2020134780A JP2022030646A (ja) 2020-08-07 2020-08-07 酸化物半導体及び酸化物半導体を含む半導体装置

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WO2022030648A2 WO2022030648A2 (ja) 2022-02-10
WO2022030648A3 true WO2022030648A3 (ja) 2022-04-21

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US20240312854A1 (en) 2023-03-13 2024-09-19 Flosfia Inc. Laminated structure and semiconductor element

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JP2012064802A (ja) * 2010-09-16 2012-03-29 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法
JP2016015503A (ja) * 2011-09-08 2016-01-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP2017001907A (ja) * 2015-06-09 2017-01-05 株式会社タムラ製作所 β−Ｇａ２Ｏ３基板、半導体積層構造体、及び半導体素子
JP2019114800A (ja) * 2019-03-13 2019-07-11 株式会社Sumco Ｓｏｉウェーハ
WO2020013244A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置
JP2020098875A (ja) * 2018-12-19 2020-06-25 信越化学工業株式会社 積層体、成膜方法及び成膜装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064802A (ja) * 2010-09-16 2012-03-29 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法
JP2016015503A (ja) * 2011-09-08 2016-01-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP2017001907A (ja) * 2015-06-09 2017-01-05 株式会社タムラ製作所 β−Ｇａ２Ｏ３基板、半導体積層構造体、及び半導体素子
WO2020013244A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置
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