WO2022030647A3 - 酸化物半導体及び酸化物半導体を含む半導体装置 - Google Patents

酸化物半導体及び酸化物半導体を含む半導体装置 Download PDF

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WO2022030647A3
WO2022030647A3 PCT/JP2021/029574 JP2021029574W WO2022030647A3 WO 2022030647 A3 WO2022030647 A3 WO 2022030647A3 JP 2021029574 W JP2021029574 W JP 2021029574W WO 2022030647 A3 WO2022030647 A3 WO 2022030647A3
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semiconductor
oxide semiconductor
mixed crystals
oxide
metal
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PCT/JP2021/029574
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French (fr)
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WO2022030647A2 (ja
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亮平 菅野
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株式会社Flosfia
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract

工業的に有用であり、かつ半導体特性に優れたｐ型の電気導電を有している酸化物半導体および酸化物半導体を含む半導体装置を提供する。２以上の金属を含む金属酸化物の混晶であって、前記混晶が周期律表の第９族から選択される第１の金属と周期律表の第１３族から選択される第２の金属とを少なくとも含有する金属酸化物を主成分とする前記混晶を含み、前記混晶中の金属において、前記第２の金属が原子比で４０％以上であり、前記混晶がｐ型の電気導電を有している、酸化物半導体。
PCT/JP2021/029574 2020-08-07 2021-08-10 酸化物半導体及び酸化物半導体を含む半導体装置 WO2022030647A2 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024005153A1 (ja) * 2022-06-29 2024-01-04 株式会社Flosfia 半導体装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09125283A (ja) * 1995-11-01 1997-05-13 Hitachi Ltd 耐食性被覆を有する金属部材とその被覆形成方法
JP2019041107A (ja) * 2017-08-24 2019-03-14 株式会社Flosfia 半導体装置
WO2019098295A1 (ja) * 2017-11-15 2019-05-23 株式会社Flosfia ｐ型酸化物半導体膜及びその形成方法
WO2020013244A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09125283A (ja) * 1995-11-01 1997-05-13 Hitachi Ltd 耐食性被覆を有する金属部材とその被覆形成方法
JP2019041107A (ja) * 2017-08-24 2019-03-14 株式会社Flosfia 半導体装置
WO2019098295A1 (ja) * 2017-11-15 2019-05-23 株式会社Flosfia ｐ型酸化物半導体膜及びその形成方法
WO2020013244A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置

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