WO2022030093A1 - デュワー瓶、フォトルミネッセンス測定装置、濃度測定方法およびシリコンの製造方法 - Google Patents
デュワー瓶、フォトルミネッセンス測定装置、濃度測定方法およびシリコンの製造方法 Download PDFInfo
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- WO2022030093A1 WO2022030093A1 PCT/JP2021/021135 JP2021021135W WO2022030093A1 WO 2022030093 A1 WO2022030093 A1 WO 2022030093A1 JP 2021021135 W JP2021021135 W JP 2021021135W WO 2022030093 A1 WO2022030093 A1 WO 2022030093A1
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- Prior art keywords
- dewar bottle
- glass
- concentration
- measuring
- vacuum
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- 238000005424 photoluminescence Methods 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000005259 measurement Methods 0.000 title abstract description 74
- 238000000691 measurement method Methods 0.000 title 1
- 239000011521 glass Substances 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 92
- 239000007788 liquid Substances 0.000 claims abstract description 83
- 239000001307 helium Substances 0.000 claims abstract description 74
- 229910052734 helium Inorganic materials 0.000 claims abstract description 74
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000012535 impurity Substances 0.000 claims abstract description 44
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 15
- 230000009467 reduction Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 238000009413 insulation Methods 0.000 description 24
- 239000005046 Chlorosilane Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
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- 230000006837 decompression Effects 0.000 description 13
- 238000001556 precipitation Methods 0.000 description 13
- -1 chlorosilane compound Chemical class 0.000 description 12
- 238000001816 cooling Methods 0.000 description 11
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- 238000007689 inspection Methods 0.000 description 10
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
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- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
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- 239000000155 melt Substances 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 235000009566 rice Nutrition 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N21/643—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" non-biological material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/08—Flasks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/18—Means for temperature control
- B01L2300/1894—Cooling means; Cryo cooling
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/10—Doped silica-based glasses containing boron or halide containing boron
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
- G01N21/0332—Cuvette constructions with temperature control
- G01N2021/0335—Refrigeration of cells; Cold stages
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6482—Sample cells, cuvettes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
Definitions
- the present invention relates to a Dewar bottle, a photoluminescence measuring device, a concentration measuring method, and a silicon manufacturing method.
- Non-Patent Document 1 discloses the following method. That is, first, a polycrystalline silicon rod is single-crystallized (single crystal rod) by the FZ (Float-Zone) method. Next, a sample is cut out from an arbitrary straight body portion of the single crystal rod, and the concentration of impurities in the sample is measured by the photoluminescence method. Then, the measured value obtained by theoretical calculation is converted into the amount of impurities in the polycrystalline silicon rod.
- helium gas has the property of penetrating glass, but when liquid helium is contained in a conventional measuring Dewar bottle and concentration is measured, the helium gas generated from the liquid helium rapidly penetrates the glass wall of the Dewar bottle. The degree of vacuum of the vacuum layer in the glass wall drops sharply. Then, the heat insulating effect of the heat insulating layer made of the vacuum layer is lowered and the evaporation of liquid helium is activated, so that the sample cannot be kept at the measured temperature (about 4K). As a result, it becomes impossible to measure the concentration of impurities in the sample by photoluminescence.
- the "vacuum degree” is the degree of vacuum in an extremely low pressure state, and is represented by the pressure of the remaining gas. Specifically, it refers to the pressure of the gas remaining in the vacuum layer. If the degree of vacuum in the vacuum layer inside the glass wall drops, it must be evacuated to restore the degree of vacuum to the level before the concentration measurement. The number of times increases.
- Non-Patent Document 2 suggests that there is a correlation between the content of SiO 2 in the glass and the permeation rate when helium gas permeates the glass.
- Non-Patent Document 2 does not mention the ease of processing from a glass base material into a Dewar bottle. For glass Dewar bottles, this ease of processing is one factor in selecting a glass base material for Dewar bottles.
- the correlation between the content of SiO 2 in glass and the permeation rate has not yet been applied to conventional measuring Dewar bottles. Therefore, when the concentration of impurities in the sample is measured by the photoluminescence method using a conventional dewar bottle for measurement, vacuuming must be performed many times, which increases the burden on the vacuuming operator and vacuums. The cost will increase.
- One aspect of the present invention has been made in view of the above-mentioned problems, and an object thereof is to measure the concentration of impurities contained in silicon in liquid helium by a photoluminescence method.
- the purpose is to reduce the burden and the cost of evacuation.
- the Dewar bottle according to one aspect of the present invention is a glass Dewar bottle used when measuring the concentration of impurities contained in silicon by the photoluminescence method in liquid helium.
- the glass has an average thermal expansion rate of 25 ⁇ 10 -7 / when the content of SiO 2 is 65% by weight or more and 75% by weight or less and the temperature of the glass is 20 ° C. or more and 300 ° C. or less. ° C or higher and 55 ⁇ 10 -7 / ° C or lower.
- the term "average thermal expansion rate" is used to actually measure the average value of the thermal expansion rate when measuring the thermal expansion rate of the glass when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower. Is.
- the concentration measuring method is a concentration measuring method for measuring the concentration of impurities contained in silicon, and the content of SiO 2 is 65% by weight or more and 75% by weight. % Or less, and the average thermal expansion rate when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower is 25 ⁇ 10-7 / ° C. or higher and 55 ⁇ 10-7 / ° C. or lower.
- the liquid helium and the silicon are contained in the glass, and the concentration of the impurities is measured by the photoluminescence method.
- the method for producing silicon according to one aspect of the present invention has a SiO 2 content of 65% by weight or more and 75% by weight or less, and a glass temperature of 20 ° C. or more and 300 ° C. or less.
- Liquid helium and silicon are contained in the silicon in a Dewar bottle made of the glass having an average thermal expansion rate of 25 ⁇ 10 -7 / ° C. or higher and 55 ⁇ 10 -7 / ° C. or lower in the following cases. It includes a concentration measuring step of measuring the concentration of impurities.
- the burden on the vacuuming operator can be significantly reduced and the vacuuming cost can be significantly reduced. can.
- Reference numeral 201 is a schematic view showing a state when the sample is immersed in the liquid helium in the measuring Dewar bottle according to the embodiment of the present invention.
- Reference numeral 202 is a cross-sectional view showing the structure of the glass wall of the measuring Dewar bottle. It is a flowchart which shows an example of the manufacturing method of polycrystalline silicon which concerns on one Embodiment of this invention. It is a figure which shows an example of the concentration measuring method which concerns on one Embodiment of this invention.
- Reference numeral 401 is a diagram showing an insertion process.
- Reference numeral 402 is a diagram showing a liquid nitrogen accommodating step.
- Reference numeral 403 is a diagram showing a liquid helium containing process.
- the photoluminescence measuring device 100 is a measuring device used when measuring the concentration of impurities (not shown) contained in polycrystalline silicon (not shown) by the photoluminescence method.
- Polycrystalline silicon is an example of silicon according to the present invention.
- photoluminescence is light emitted from sample 4 in the process in which excess electrons and holes are generated in the sample 4 when the sample 4 is irradiated with laser light, and the electrons and holes are recombined.
- four kinds of atoms of P, B, Al and As are impurities to be measured by the photoluminescence measuring device 100. It is not necessary to target all of the four types of atoms for concentration measurement, and at least one of the four types of atoms may be targeted for concentration measurement. Alternatively, atoms other than the above four types of atoms may be targeted for concentration measurement. Examples of atoms other than the above four types of atoms to be measured by the photoluminescence measuring device 100 include C.
- the photoluminescence measuring device 100 includes a cryostat 101, a laser light source 102, a first filter 103, a plane mirror 104, a condenser lens 106, a second filter 107, a spectroscope 108, a light detector 109, and information processing. It includes a device 110 and a sample holder 111.
- the cryostat 101 is a device for keeping the sample 4 at a low temperature of about 4K.
- a measuring dewar bottle 1 is installed inside the cryostat 101, and a sample 4 and a liquid helium 5 are contained in an inner cylinder Dewar bottle 2 (see reference numeral 201 in FIG. 2; details will be described later) constituting the measuring dewar bottle 1. Be housed.
- the liquid helium 5 is used to cool the sample 4 to about 4K.
- the cryostat 101 is provided with a window 105, and in a state where the sample 4 is housed inside the cryostat 101 (specifically, housed in the inner cylinder Dewar bottle 2), the sample 4 is stored from the outside of the window 105. The whole is visible.
- the laser light source 102 irradiates the laser beam in the direction of the sample 4 housed inside the cryostat 101.
- a first filter 103 and a plane mirror 104 are arranged between the cryostat 101 and the laser light source 102.
- the first filter 103 is arranged between the laser light source 102 and the plane mirror 104, and cuts infrared light contained in the laser light emitted from the laser light source 102.
- the plane mirror 104 is arranged between the first filter 103 and the cryostat 101, and adjusts the optical path of the laser beam transmitted through the first filter 103. Specifically, the plane mirror 104 adjusts the optical path of the laser beam so that the laser beam transmitted through the first filter 103 irradiates the sample 4 in the cryostat 101. The sample 4 in the cryostat 101 irradiated with the laser beam emits photoluminescence.
- the condenser lens 106 collects the photoluminescence radiated from the sample 4 in the cryostat 101, and guides the focused photoluminescence to the spectroscope 108.
- the second filter 107 is arranged between the condenser lens 106 and the spectroscope 108, and cuts the laser beam and the high-order diffraction light.
- the spectroscope 108 disperses the photoluminescence guided by the condenser lens 106.
- the photodetector 109 detects the light after spectroscopy by the spectroscope 108 and outputs the detection result as a detection signal to the information processing apparatus 110.
- the information processing apparatus 110 processes the detection signal output from the photodetector 109 to acquire a photoluminescence spectrum. Further, the information processing apparatus 110 measures the concentration of impurities contained in the sample 4 by analyzing the acquired photoluminescence spectrum. Examples of the information processing device 110 include a stationary PC, a tablet terminal, a smartphone, and the like.
- the sample holder 111 is an instrument for immersing the entire sample 4 in the liquid helium 5 while holding the sample 4. Further, the sample holder 111 is formed with a helium gas supply / discharge port (not shown) and a liquid helium supply port (not shown).
- the helium gas supply / discharge port is a vent for supplying helium gas into the inner cylinder Dewar bottle 2 and discharging the helium gas staying in the inner cylinder Dewar bottle 2 to the outside of the bottle.
- the liquid helium supply port is a supply port for supplying the liquid helium 5 to the inner cylinder Dewar bottle 2 and accommodating the liquid helium 5 in the bottle.
- the configuration of the photoluminescence measuring device 100 described above is only an example.
- the photoluminescence measuring device 100 may have any configuration as long as the sample 4 and the liquid helium 5 are contained in the measuring Dewar bottle 1 and the concentration of impurities in the sample 4 can be measured by the photoluminescence method. ..
- the measuring Dewar bottle 1 is used when measuring the concentration of impurities contained in the sample 4 by the photoluminescence method, and as shown by reference numeral 201 in FIG. 2, the inner cylinder Dewar bottle 1 is inside the bottle of the outer cylinder Dewar bottle 3. It is a double-structured Dewar bottle containing 2.
- the Dewar bottle according to one aspect of the present invention refers to a bottle in which liquid helium is contained.
- the inner cylinder Dewar bottle 2 corresponds to the Dewar bottle according to one aspect of the present invention.
- the measuring Dewar bottle 1 can be said to be a Dewar bottle in which the inner cylinder Dewar bottle 2 according to the embodiment of the present invention is used.
- the outer cylinder Dewar bottle 3 is arranged outside the inner cylinder Dewar bottle 2 and the liquid nitrogen 6 is interposed between the two. With this configuration, the measuring Dewar bottle 1 can be efficiently cooled. According to this configuration, since the liquid nitrogen 6 is contained in the outer cylinder Dewar bottle 3 instead of the liquid helium 5, the outer cylinder Dewar bottle 3 does not correspond to the Dewar bottle according to one aspect of the present invention. However, if a configuration that accommodates liquid helium 5 instead of liquid nitrogen 6 is adopted, the outer cylinder Dewar bottle 3 also falls under the Dewar bottle according to one aspect of the present invention.
- the inner cylinder Dewar bottle 2 is made of glass and has a cylindrical shape and a bottomed glass wall 21. Further, in the inner cylinder Dewar bottle 2, a space 22 is formed inside over the entire portion of the glass wall 21, and a vacuum layer is formed in the space 22 by evacuating the space 22. When evacuating, a pulling port (not shown) is formed at the bottom of the inner cylinder Dewar bottle 2 and evacuated from the drawing port. The pull port is an air discharge path in the space 22 in which the opening is formed. After finishing the evacuation, close the pull opening. The degree of vacuum of the vacuum layer formed in the space 22 is also adjusted by forming a pull port at the bottom of the inner cylinder Dewar bottle 2.
- the inner cylinder Dewar bottle 2 is an example of the Dewar bottle according to the present invention, and the sample 4 and the liquid helium 5 are directly contained in the bottle.
- the inner cylinder Dewar bottle 2 has a height of about 800 mm, an outer diameter of about 90 mm, a thickness of the glass wall 21 of about 5 mm, and a glass plate 211 (reference numeral in FIG. 2) surrounding the space 22 in the glass wall 21. (See 202) has a thickness of about 2 mm.
- hard secondary glass among borosilicate glass can be used as the glass used as the forming material for the inner cylinder Dewar bottle 2.
- the outer cylinder Dewar bottle 3 is also made of glass, and is composed of a cylindrical and bottomed glass wall 31. Further, the outer cylinder Dewar bottle 3 also has a space 32 formed inside over the entire portion of the glass wall 31. However, the vacuum layer is formed in the space 32 from the beginning, and the degree of vacuum of the vacuum layer formed in the space 32 is not adjusted. The reason why the degree of vacuum of the vacuum layer formed in the space 32 is not adjusted is that the liquid nitrogen 6 is contained in the outer cylinder Dewar bottle 3 as described below. As a matter of course, the outer cylinder Dewar bottle 3 may have a structure in which the degree of vacuum can be adjusted.
- the outer cylinder Dewar bottle 3 contains liquid nitrogen 6 for preventing heat from being released from the glass wall 21 of the inner cylinder Dewar bottle 2. Then, by immersing the inner cylinder Dewar bottle 2 in the liquid nitrogen 6 in the outer cylinder Dewar bottle 3, the measurement dewar bottle 1 having the double structure is formed.
- the outer cylinder Dewar bottle 3 has a height of about 700 mm, an outer diameter of about 140 mm, a thickness of the glass wall 31 of about 10 mm, and a glass plate 311 surrounding the space 32 in the glass wall 31 (reference numeral in FIG. 2). (See 202) has a thickness of about 5 mm.
- Pyrex manufactured by Corning Inc .; a registered trademark
- Pyrex belongs to the hard first grade glass among the borosilicate glasses.
- the rate of decrease in the degree of vacuum of the vacuum layer is significantly slower than that of the conventional measuring Dewar bottle, and the following merits can be enjoyed.
- rice field That is, the concentration measurement of impurities in polysilicon by the photoluminescence method is usually performed at least once a day throughout the year if it is used in the quality process of polysilicon production. Along with this, if the above-mentioned concentration measurement is performed using a conventional measuring Dewar bottle, the vacuum must be drawn once a day.
- the measuring Dewar bottle 1 provided with the inner cylinder Dewar bottle 2 according to the present embodiment it is sufficient to evacuate at a pace of at most once every three months. Therefore, the burden on the evacuating operator can be significantly reduced, and the evacuating cost can be significantly reduced.
- the durability when used continuously for a long period of time is about the same as that of the conventional Dewar bottle for measurement, and the deformation and breakage of the glass wall caused by the continuous use for a long period of time can be kept within an allowable range.
- the inner cylinder Dewar bottle 2 and the outer cylinder Dewar bottle 3 are not limited to the above-mentioned dimensions, and the design may be arbitrarily changed according to the size and shape of the sample 4, the internal structure of the cryostat 101, and the like.
- the glass used as the forming material of the inner cylinder Dewar bottle 2 has a SiO 2 content of 65 to 75% by weight or less and an average thermal expansion rate of 25 ⁇ when the glass temperature is 20 to 300 ° C. If it is 10-7 to 55 ⁇ 10-7 / ° C, it does not have to be hard secondary glass.
- the glass used as the forming material of the outer cylinder Dewar bottle 3 may be hard first grade glass, and does not necessarily have to be Pyrex.
- the double-structured measuring dewar bottle 1 has been described as an example, but in the measuring dewar bottle 1, the inner cylinder dewar bottle 2 is housed in the outer cylinder dewar bottle 3. It does not have to be a heavy structure.
- the glass wall constituting the bottle may be composed of only one single-layered Dewar bottle.
- the glass used as a material for forming a single-layered Dewar bottle has at least a SiO 2 content of 65 to 75% by weight or less and an average thermal expansion rate when the glass temperature is 20 to 300 ° C. It needs to be 25 ⁇ 10 -7 to 55 ⁇ 10 -7 / ° C.
- the manufacturing method includes a silicon precipitation step S1, a processing / inspection step S2, a separation step S3, and a distillation step S4.
- the structure and reaction conditions of the reaction apparatus used in the silicon precipitation step S1 are not particularly limited, and known reaction apparatus and reaction conditions can be adopted.
- the silicon precipitation step S1 can be performed by, for example, a Siemens method (Belger method) or a melt precipitation method (VLD method, Vapor to Liquid Deposition method). Since the Siemens method and the melt precipitation method are known methods, the description of these methods will be omitted. In order to efficiently precipitate polycrystalline silicon, it is preferable that the silicon precipitation step S1 is performed by the Siemens method.
- the chlorosilane compound means a compound containing Cl and Si.
- examples of the chlorosilane compound contained in the raw material gas include trichlorosilane and dichlorosilane.
- the rod of polycrystalline silicon precipitated by the treatment in the silicon precipitation step S1 is cut and crushed, and processed so as to have the shape and dimensions required by the customer (processing step: S2). Further, the quality of the polysilicon is inspected by preparing the sample 4 from the thermoplastic rod and measuring the concentration of impurities in the sample 4 using the photoluminescence measuring device 100 (inspection step: S2). .. If the inspection result of "pass" is obtained, the surface of the processed product is cleaned, packed, and then the product is shipped to the customer.
- the inspection step in the processing / inspection step S2 is an example of the concentration measuring step according to the present invention.
- the exhaust gas contains a chlorosilane compound, H2, HCl and silicon fine powder, and may also contain a silane oligomer.
- the chlorosilane condensate may contain silicon fine powder.
- the content of silicon fine powder in the chlorosilane condensate can be 0.01 to 0.3% by mass, particularly 0.05 to 0.2% by mass.
- the chlorosilane condensate may be used for applications other than the present production method.
- the gas component contains hydrogen gas and HCl as main components.
- the gas component further contains a chlorosilane compound remaining as a chlorosilane condensate without being condensed and separated in an amount of about several volume%. It may also contain B and P derived from metallic silicon, albeit in trace amounts.
- the cooling temperature of the gas component is not particularly limited as long as it is equal to or lower than the temperature at which the chlorosilane compound condenses, and can be appropriately determined in consideration of the cooling capacity of the cooling device used. The lower the cooling temperature, the higher the condensation effect of the chlorosilane compound tends to be.
- the separation method used in the separation step S3 is not particularly limited as long as it can separate the chlorosilane condensate and the gas component, but it is preferable to use the condensation removal method.
- the decondensation removal method is a method of separating the chlorosilane condensate and the gas component by cooling the exhaust gas to condense the chlorosilane compound.
- the method for cooling the exhaust gas used in the separation step S3 is not particularly limited as long as it can be cooled to a temperature below the temperature at which the chlorosilane compound is condensed, and a known cooling method can be used. Specific examples thereof include a method of passing exhaust gas through a cooled heat exchanger to cool the exhaust gas, a method of cooling the exhaust gas with a condensed and cooled condensate, and the like. It is also possible to adopt these methods individually or in combination.
- Distillation step S4> the chlorosilane compound obtained by distilling the chlorosilane condensate obtained in the separation step S3 is circulated in the reaction apparatus used in the silicon precipitation step S1 (distillation step: S4). By performing this treatment, the chlorosilane compound obtained after distillation can be reused as a raw material for producing polycrystalline silicon in the silicon precipitation step S1.
- Polycrystalline silicon is produced by following each of the above steps S1 to S4.
- the above-mentioned manufacturing method is merely an example, and various manufacturing methods can be adopted as long as the concentration is measured using the photoluminescence measuring device 100 in the processing / inspection step S2.
- a hydrogen chloride removing step of bringing the gas component obtained in the separation step S3 into contact with the chlorosilane solution to remove HCl may be included.
- a hydrogen purification step of contacting the gas component obtained in the hydrogen chloride removing step with the activated carbon to remove the chlorosilane compound to obtain hydrogen gas may be included.
- the "inspection step" of the processing / inspection step S2 can also be adopted as one step of the method for manufacturing single crystal silicon.
- sample 4 is prepared from a polycrystalline silicon rod (production process). Specifically, a round bar is cut out in the radial direction from the straight body portion of a polysilicon rod, and then the round bar is single crystallized by the FZ method to obtain a single crystal rod. Then, the sample 4 is produced by cutting out the sample 4 from an arbitrary straight body portion of the single crystal rod.
- the method for producing the sample 4 is only an example, and the method for producing the sample 4 can be changed according to the diameter of the rod of polycrystalline silicon and the like.
- a vacuum (insulation) layer is formed in the space 22 of the glass wall 21 of the inner cylinder Dewar bottle 2.
- a vacuum (insulation) layer for example, a rotary pump and a turbo pump (both not shown) are used together, and the vacuum degree of the vacuum (insulation) layer should be 1 x 10 -4 Pa. Evacuate as (vacuum drawing process).
- the degree of vacuum of the vacuum (heat insulating) layer formed in the space 22 in the glass wall 21 is 1 ⁇ 10 -4 Pa (confirmation step). This degree of vacuum is confirmed by a pressure gauge (not shown) connected to the vacuum (insulation) layer. If the degree of evacuation is lower than 1 ⁇ 10 -3 Pa, the evacuation step is repeated to make the degree of evacuation 1 ⁇ 10 -4 Pa.
- the sample 4 is set in the sample holder 111 (sample setting step).
- the inner cylinder Dewar bottle 2 is installed in the outer cylinder Dewar bottle 3 so that the inner cylinder Dewar bottle 2 does not move in the outer cylinder Dewar bottle 3 (bottle installation step).
- a felt (not shown) or the like is adhered to the inner surface of the bottom of the outer cylinder Dewar bottle 3, and the bottom surface of the bottom of the inner cylinder Dewar bottle 2 is adhered onto the felt to adhere the inner cylinder.
- the Dewar bottle 2 is fixed in the outer cylinder Dewar bottle 3 so as not to vibrate. By this fixing, the bottom surface of the bottom of the inner cylinder Dewar bottle 2 is arranged at a predetermined height with respect to the inner surface of the bottom of the outer cylinder Dewar bottle 3.
- the measuring Dewar bottle 1 having a double structure of the inner cylinder Dewar bottle 2 and the outer cylinder Dewar bottle 3 by the bottle installation process is mounted on the cryostat 101 (mounting process).
- the sample holder 111 in which the sample 4 is set is inserted into the inner cylinder Dewar bottle 2, and the sample holder 111 is fixed to the cryostat 101 (insertion step).
- the decompression pull port is an opening formed to create a vacuum (under decompression) in the inner cylinder Dewar bottle 2 containing the liquid helium 5.
- the gas bag is mainly used for the purpose of facilitating the storage of the liquid helium 5 in the inner cylinder Dewar bottle 2.
- the gas pack is also used for the purpose of facilitating the pressure reduction in the inner cylinder Dewar bottle 2. Further, the gas pack is also used for the purpose of making it possible to supply nitrogen gas or the like in order to easily remove water vapor, water or the like in the inner cylinder Dewar bottle 2. It is not essential to use a gas pack.
- the rotary pump is operated and the cock on the rotary pump side is opened to reduce the pressure inside the inner cylinder Dewar bottle 2 (first decompression step).
- the inside of the inner cylinder Dewar bottle 2 is depressurized with a rotary pump until the pressure gauge shows 0.1 ⁇ 100 Pa.
- the cock on the rotary pump side is closed and the cock on the gas supply side is opened to supply nitrogen gas or the like into the inner cylinder Dewar bottle 2 (gas supply step).
- Second decompression step Similar to the first decompression step, the inside of the inner cylinder Dewar bottle 2 is depressurized with a rotary pump until the pressure gauge shows 0.1 ⁇ 100 Pa.
- the decompression time in the first decompression step and the decompression time in the second decompression step were set to the same time.
- the gas supply step and the second decompression step are repeated as many times as necessary.
- the gas supply step and the second decompression step were repeated as many times as necessary.
- the cock on the rotary pump side is closed to operate the rotary pump. Stop. Then, after stopping the operation of the rotary pump, the hose and the supply tube attached to the upper part of the sample holder 111 are removed (removal step).
- liquid nitrogen 6 is placed in the gap formed between the outer surface of the glass wall 21 of the inner cylinder Dewar bottle 2 and the inner surface of the glass wall 31 of the outer cylinder Dewar bottle 3.
- Contain liquid nitrogen accommodating step.
- the liquid nitrogen 6 is accommodated in the gap by supplying the liquid nitrogen 6 to the gap from the liquid nitrogen supply port (not shown) formed in the upper part of the sample holder 111.
- the liquid nitrogen supply port is closed so as not to volatilize.
- the liquid helium 5 is stored in the inner cylinder Dewar bottle 2 under reduced pressure, in other words, in the space where the sample 4 exists (liquid helium storage step). Specifically, the liquid helium 5 is accommodated in the space by supplying the liquid helium 5 to the space from the liquid helium supply port (not shown) formed on the upper part of the sample holder 111.
- the liquid helium transfer is removed from the container in which the liquid helium 5 is contained. Then, the outlet of the container and the liquid helium supply port of the sample holder 111 are closed (final step of pre-measurement preparation).
- the concentration of impurities in the sample 4 is measured by the photoluminescence method in the state shown by reference numeral 403 in FIG. 4 (concentration measurement step).
- the laser light source 102 of the photoluminescence measuring device 100 is activated, and the laser light is emitted from the laser light source 102.
- the concentration measurement itself in the concentration measurement step is, for example, in the method of the standard "JEITA EM-3601A” disclosed in Non-Patent Document 1 or in the silicon crystal by JIS standard "JIS H 0615-1996 photoluminescence” cited in this standard. It is sufficient to follow the method of "Method for measuring impurity concentration". In the present embodiment, the description thereof will be omitted assuming that the concentration is measured by a method according to the above JIS standard.
- the sample holder 111 is removed from the cryostat 101. Then, the inner cylinder Dewar bottle 2 is removed from the outer cylinder Dewar bottle 3 and the liquid helium 5 remaining in the inner cylinder Dewar bottle 2 is discarded. Then, the outer cylinder Dewar bottle 3 is removed from the cryostat 101, and the liquid nitrogen 6 remaining in the outer cylinder Dewar bottle 3 is discarded. After the removal, the set of instruments such as the inner cylinder Dewar bottle 2, the outer cylinder Dewar bottle 3 and the sample holder 111 is sufficiently dried. When measuring the concentration of another sample 4, each step after the preparation step is carried out again.
- a first pipe (not shown) provided with a valve connected to the space 22 of the glass wall 21 of the inner cylinder Dewar bottle 2 was provided with a valve in which a rotary pump and a turbo pump were connected via a vacuum hose.
- a second pipe (not shown) is attached to form a vacuum line.
- the space 22 is evacuated by the rotary pump by operating the rotary pump to open and close the valve included in the vacuum line. Then, when the pressure is roughly reduced (0.1 ⁇ 100 Pa is a guide), the turbo pump is operated to open and close the valve, and the vacuum is further drawn. While evacuation is being performed, the degree of vacuum of the vacuum (insulation) layer formed in the space 22 is confirmed by visually observing the pressure gauge connected to the space 22. Then, evacuate with the vacuum degree of the vacuum (insulation) layer as a guideline of 1 ⁇ 10 -4 Pa. After confirming that the degree of vacuum of the vacuum (insulation) layer has reached 1 ⁇ 10 -4 Pa, the valve included in the vacuum line is closed to stop the operation of the rotary pump and the turbo pump. Then, the vacuum line and the like are removed from the inner cylinder Dewar bottle 2 so that the degree of vacuum of the vacuum (heat insulating) layer is maintained.
- the contents and execution order of each process described above are just examples. If the sample 4 and the liquid helium 5 are contained in the measuring Dewar bottle 1 and the concentration of impurities in the sample 4 is measured by the photoluminescence method, the contents and execution order of each of the above-mentioned steps can be arbitrarily changed. May be good.
- the photoluminescence measuring device 100, the measuring Dewar bottle 1, and the concentration measuring method according to the present embodiment can be applied to single crystal silicon (not shown). Further, by applying the concentration measuring method according to the present embodiment to single crystal silicon, single crystal silicon can also be produced. That is, single crystal silicon is also an example of silicon according to the present invention.
- the photoluminescence measuring device 100 and the dewar bottle 1 for measurement are used for quality control of a silicon wafer made of single crystal silicon, specifically, when measuring the concentration of a trace amount of impurities contained in the silicon wafer by the photoluminescence method. Can be used. In this case, it is necessary to eliminate the influence of thermal noise in order to measure the concentration of a trace amount of impurities. Therefore, as in the present embodiment, the liquid helium 5 is housed in the inner cylinder Dewar bottle 2 and the Noh measurement is performed at a low temperature.
- the Dewar bottle according to one aspect of the present invention is a glass Dewar bottle used when measuring the concentration of impurities contained in silicon by the photoluminescence method in liquid helium.
- the glass has an average thermal expansion rate of 25 ⁇ 10 -7 / when the content of SiO 2 is 65% by weight or more and 75% by weight or less and the temperature of the glass is 20 ° C. or more and 300 ° C. or less. ° C or higher and 55 ⁇ 10 -7 / ° C or lower.
- the term "average thermal expansion rate" is used to actually measure the average value of the thermal expansion rate when measuring the thermal expansion rate of the glass when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower. Is.
- the glass which is the material for forming the Dewar bottle according to one aspect of the present invention has a SiO 2 content of 65% by weight or more and 75% by weight or less. Therefore, compared to the conventional Dewar bottle for measurement, it is difficult for the helium gas generated in the Dewar bottle to permeate through the glass wall of the Dewar bottle during measurement by the photoluminescence method. Therefore, the degree of vacuum of the vacuum layer formed inside the glass wall is less likely to decrease as compared with the conventional Dewar bottle for measurement, so that the number of times of evacuation after measurement can be significantly reduced. Therefore, the burden on the evacuating operator can be significantly reduced and the evacuating cost can be significantly reduced.
- the helium gas generated in the Dewar bottle easily permeates the glass wall of the Dewar bottle, and it becomes difficult to maintain a low temperature for a long time.
- the content of SiO 2 is less than 65% by weight, the components other than SiO 2 are increased instead, and the influence of the components becomes large.
- glass containing 20% by weight or more and 60% by weight or less of PbO has a large average coefficient of thermal expansion, so that the strain due to cooling from room temperature to ultra-low temperature becomes large. Therefore, it is not suitable as a material for forming a Dewar bottle used at low temperature.
- a glass containing 5% by weight or more and 20% by weight or less of Al 2 O 3 has a high glass transition temperature, which makes it difficult to process the glass into a Dewar bottle. Therefore, it is not suitable as a material for forming a Dewar bottle.
- the content of SiO 2 in the glass is 65% by weight or more and 75% by weight or less, not only the decrease in the degree of vacuum of the vacuum layer is suppressed, but also cooling from room temperature to ultra-low temperature is performed. Distortion is small and processing into a Dewar bottle becomes easy. Furthermore, the number of vacuums after measurement can be significantly reduced, and there is no deterioration of the Dewar bottle due to repeated temperature lowering / raising between normal temperature and ultra-low temperature, so the production cost of the Dewar bottle can be kept low. can.
- the average thermal expansion rate of glass which is a material for forming a Dewar bottle, when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower is 25 ⁇ 10-7 / ° C. or higher 55 ⁇ 10-7 /. It is below ° C. Therefore, even if the temperature of the glass wall of the Dewar bottle drops from normal temperature to extremely low temperature in the process of measurement by the photoluminescence method, the glass wall is less likely to shrink due to heat as compared with the conventional Dewar bottle for measurement.
- the thermal expansion of the glass wall remains within the allowable range for the continuation of the measurement. .. Therefore, even if the number of measurements by the photoluminescence method is repeated, the deformation / breakage of the glass wall can be kept within an allowable range, and a Dewar bottle with guaranteed durability can be realized.
- the average thermal expansion rate is less than 25 ⁇ 10 -7 / ° C when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower, the glass is not easily softened even when exposed to a high temperature of 1000 ° C. or higher. Since it is difficult, it is not suitable as a material for forming a Dewar bottle.
- the average thermal expansion rate exceeds 55 ⁇ 10 -7 / ° C, distortion is likely to occur when the glass is cooled from room temperature to ultra-low temperature, which makes it unsuitable as a material for forming a Dewar bottle. ..
- the glass may have a B2O3 content of 10 % by weight or more and 30 % by weight or less.
- the average thermal conductivity of the glass tends to be lower than that of the glass having a B2 O3 content of less than 10% by weight and the glass having a B2O3 content of more than 30 % by weight. Therefore, the Dewar bottle is not easily affected by the temperature change inside and outside the Dewar bottle that occurs in the process of measurement by the photoluminescence method. Therefore, the durability of the Dewar bottle can be improved.
- the average thermal conductivity in other words, the average coefficient of thermal expansion tends to be lowered. Furthermore, since a specific amount of B 2 O 3 is contained, it is possible to obtain the effect of lowering the softening temperature of the glass while maintaining the chemical durability. However, in the case of glass having a B 2 O 3 content of less than 10% by weight, the effect of lowering the softening temperature is small, and the workability (easiness of processing) of the glass may not be improved. On the other hand, when the content of B 2 O 3 exceeds 30% by weight, SiO 2 and B 2 O 3 tend to be easily separated and the use of glass itself tends to be difficult.
- the impurity may be an atom of at least one of P, B, Al and As. According to the above configuration, whether or not silicon contains at least one of P, B, Al and As is significantly reduced in the burden on the vacuuming operator as compared with the conventional measuring Dewar bottle. And it can be measured with a Dewar bottle that can significantly reduce the cost of evacuation.
- the photoluminescence measuring device includes a Dewar bottle according to any one of the above-mentioned aspects.
- the photoluminescence measuring device according to one aspect of the present invention can significantly reduce the burden on the vacuuming operator and the vacuuming cost as compared with the conventional measuring Dewar bottle. Equipped with a Dewar bottle with improved durability. Therefore, if the concentration of impurities contained in silicon in liquid helium is measured using the photoluminescence measuring device according to one aspect of the present invention, the burden on the measurement personnel can be significantly reduced and the maintenance cost of the Dewar bottle can be reduced. It can be significantly reduced.
- the concentration measuring method is a concentration measuring method for measuring the concentration of impurities contained in silicon, and the content of SiO 2 is 65% by weight or more and 75% by weight. % Or less, and the average thermal expansion rate when the temperature of the glass is 20 ° C. or higher and 300 ° C. or lower is 25 ⁇ 10-7 / ° C. or higher and 55 ⁇ 10-7 / ° C. or lower.
- the liquid helium and the silicon are contained in the glass, and the concentration of the impurities is measured by the photoluminescence method. According to the above configuration, the same effect as that of the photoluminescence measuring device according to one aspect of the present invention is obtained.
- the method for producing silicon according to one aspect of the present invention has a SiO 2 content of 65% by weight or more and 75% by weight or less, and a glass temperature of 20 ° C. or more and 300 ° C. or less.
- Liquid helium and silicon are contained in the silicon in a Dewar bottle made of the glass having an average thermal expansion rate of 25 ⁇ 10 -7 / ° C. or higher and 55 ⁇ 10 -7 / ° C. or lower in the following cases. It includes a concentration measuring step of measuring the concentration of impurities.
- the method for producing silicon according to one aspect of the present invention includes a concentration measuring step.
- the concentration of impurities contained in silicon in liquid helium can be measured in a Dewar bottle that can significantly reduce the burden on the vacuuming operator and the vacuuming cost compared to the conventional Dewar bottle for measurement. It is done using. Therefore, silicon can be manufactured at low cost while reducing the burden on the manufacturing personnel.
- the measuring Dewar bottle according to the comparative example of the present invention also has a double structure of an inner cylinder Dewar bottle and an outer cylinder Dewar bottle (both not shown).
- the inner cylinder Dewar bottle and the outer cylinder Dewar bottle according to the comparative example of the present invention have the same configurations as the inner cylinder Dewar bottle 2 and the outer cylinder Dewar bottle 3 according to the embodiment of the present invention, except for the glass component and the average thermal expansion rate. Is.
- the components of glass as a forming material and the average thermal expansion rate are as follows. It is shown in Table 1.
- the composition component (SiO 2 and the like) of the glass was determined by a calibration curve method using a wavelength dispersive fluorescent X-ray analyzer (WDX).
- the average coefficient of thermal expansion of the glass was measured by using a thermomechanical analyzer (TMA) as the average coefficient of thermal expansion when the temperature of the glass was 20 to 300 ° C.
- the inner cylinder Dewar bottle 2 was manufactured by using the glass B in Table 1 above.
- the inner cylinder Dewar bottle was manufactured by using the glass A in Table 1 above.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 and the vacuum (insulation) layer of the outer cylinder Dewar bottle 3 A measuring Dewar bottle 1 having a vacuum degree of 1 ⁇ 10 -4 Pa was used. This also applies to the measuring Dewar bottles of Comparative Examples 1 to 3 below.
- the outer cylinder Dewar bottle 3 according to Example 1 of the present invention was made of glass A in Table 1 above.
- 36 samples 4 were set in the sample holder 111, and the first (first) concentration measurement was performed.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 was measured.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 remained at 1 ⁇ 10 -4 Pa. Therefore, the second concentration measurement could be performed without performing the evacuation operation described in the above-mentioned [evacuation step] column.
- the same one as the measuring dewar bottle 1 according to the first embodiment of the present invention was used. Then, 36 samples 4 were set in the sample holder 111, and the first (first) concentration measurement was performed. Subsequently, each step described in the above section [Method for measuring the concentration of impurities in polycrystalline silicon] was carried out once a day and repeated for 3 months (about 75 times). After the final concentration measurement was completed, the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 was measured. As a result of the measurement, it was found that the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 remained at 1 ⁇ 10 -4 Pa.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 remained at 1 ⁇ 10 -4 Pa before and after the concentration measurement at all times. Therefore, it was not necessary to perform the evacuation operation from the end of the first concentration measurement to the end of the last concentration measurement.
- the outer cylinder Dewar bottle 3 according to the third embodiment of the present invention was made of the glass B in Table 1 above. Then, the same operation as in Example 2 was performed. The measurement results of the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle 2 were also the same as in Example 2. That is, also in Example 3, it was not necessary to perform the evacuation operation from the end of the first concentration measurement to the end of the last concentration measurement.
- the outer cylinder Dewar bottle according to Comparative Example 1 of the present invention was made of glass A in Table 1 above.
- 36 samples 4 were set in the sample holder 111, and the first (first) concentration measurement was performed.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was measured.
- the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was reduced to 6 ⁇ 10 ⁇ 2 Pa. Therefore, the evacuation work described in the above [evacuation step] column was performed.
- a second concentration measurement was performed using a measuring Dewar bottle in which the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was once again 1 ⁇ 10 -4 Pa after vacuuming work.
- the working time required for the first concentration measurement was about 5 hours and 30 minutes.
- the time required for the evacuation work was about 2 hours and 50 minutes.
- the working time required for the second concentration measurement was about 5 hours and 40 minutes.
- Comparative Example 2 As the measuring dewar bottle according to Comparative Example 2 of the present invention, the same one as the measuring Dewar bottle according to Comparative Example 1 of the present invention was used. Then, 36 samples 4 were set in the sample holder 111, and the first (first) concentration measurement was performed. After the completion of the first concentration measurement, the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was measured. As a result of the measurement, it was found that the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was reduced to 6 ⁇ 10 ⁇ 2 Pa.
- Comparative Example 3 The outer cylinder Dewar bottle according to Comparative Example 3 of the present invention was made of glass B in Table 1 above. Then, the same operation as in Comparative Example 2 was performed. After the completion of the first concentration measurement, the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was measured. As a result of the measurement, it was found that the degree of vacuum of the vacuum (insulation) layer of the inner cylinder Dewar bottle was reduced to 7 ⁇ 10 ⁇ 2 Pa.
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Abstract
Description
まず、図1を用いて、本発明の一実施形態に係るフォトルミネッセンス測定装置100について説明する。フォトルミネッセンス測定装置100は、多結晶シリコン(不図示)に含まれる不純物(不図示)の濃度をフォトルミネッセンス法によって測定するときに用いられる測定装置である。多結晶シリコンは、本発明に係るシリコンの一例である。
次に、図2を用いて、本発明の一実施形態に係る測定用デュワー瓶1について説明する。測定用デュワー瓶1は、試料4に含まれる不純物の濃度をフォトルミネッセンス法によって測定するときに用いられ、図2の符号201に示すように、外筒デュワー瓶3の瓶内に内筒デュワー瓶2が収容された二重構造のデュワー瓶である。
次に、図3を用いて、本発明の一実施形態に係る多結晶シリコンの製造方法について説明する。前記の製造方法は、シリコン析出工程S1、加工/検査工程S2、分離工程S3および蒸留工程S4を含んでいる。
まず、クロロシラン化合物(不図示)とH2とを反応させて多結晶シリコンを析出させる(シリコン析出工程:S1)。シリコン析出工程S1にて用いられる反応装置の構造および反応条件は特に制限されず、公知の反応装置および反応条件を採用することができる。シリコン析出工程S1は、具体的には、例えばシーメンス法(ベルジャー法)または溶融析出法(VLD法、Vapor to Liquid Deposition法)によって行うことが可能である。シーメンス法および溶融析出法は公知の方法であるため、これらの方法の説明については省略する。なお、多結晶シリコンを効率的に析出させるためには、シリコン析出工程S1はシーメンス法によって行われることが好ましい。
次に、シリコン析出工程S1での処理によって析出した多結晶シリコンのロッドを切断および破砕して、顧客の要求形状および要求寸法になるように加工する(加工工程:S2)。また、前記多結晶シリコンのロッドから試料4を作製し、フォトルミネッセンス測定装置100を用いて試料4中の不純物の濃度を測定することにより、多結晶シリコンの品質を検査する(検査工程:S2)。「合格」の検査結果が出れば、加工後の製品の表面を洗浄し、梱包した後、当該製品を顧客に出荷する。なお、加工/検査工程S2のうちの検査工程が、本発明に係る濃度測定工程の一例となる。
次に、シリコン析出工程S1での処理によって排出される排ガスを、クロロシラン凝縮液とガス成分とに分離する(分離工程:S3)。排ガス中には、クロロシラン化合物、H2、HClおよびシリコン微粉が含有され、さらに、シラン類オリゴマーも含有され得る。
次に、分離工程S3で得られたクロロシラン凝縮液を蒸留して得られたクロロシラン化合物を、シリコン析出工程S1で使用する反応装置に循環させる(蒸留工程:S4)。この処理を行うことにより、蒸留後に得られたクロロシラン化合物を、シリコン析出工程S1において多結晶シリコン生成の原料として再利用することができる。
次に、図4を用いて、本発明の一実施形態に係る多結晶シリコン中の不純物の濃度測定方法について説明する。具体的には、フォトルミネッセンス法による多結晶シリコン中の不純物の濃度測定を行うための測定前準備、実測定、および測定終了後の一連の操作について説明する。なお、以下の説明はあくまで一例であり、必ずしも以下の手順に限定される訳ではない。以下、内筒デュワー瓶2の瓶底に引き口が形成され、外筒デュワー瓶3の瓶内に内筒デュワー瓶2が収容されていることを前提として説明する。
本実施形態では、真空引き工程として具体的には以下の作業を行う。なお、後掲の実施例および比較例においても、以下に説明する作業と同様の作業を行った。まず、内筒デュワー瓶2のガラス壁21の空間22と連結したバルブを備えた第1配管(不図示)に、真空ホースを介して、ロータリーポンプとターボポンプとが接続されたバルブを備えた第2配管(不図示)を取り付けて、真空ラインを形成する。
本実施形態に係るフォトルミネッセンス測定装置100、測定用デュワー瓶1、濃度測定方法は、単結晶シリコン(不図示)に適用することができる。また、本実施形態に係る濃度測定方法を単結晶シリコンに適用することで、単結晶シリコンを製造することもできる。つまり、単結晶シリコンも、本発明に係るシリコンの一例である。
前記の課題を解決するために、本発明の一態様に係るデュワー瓶は、シリコンに含まれる不純物の濃度を、液体ヘリウム中でフォトルミネッセンス法によって測定するときに用いられるガラス製のデュワー瓶であって、前記ガラスは、SiO2の含有量が65重量%以上75重量%以下であり、かつ、前記ガラスの温度が20℃以上300℃以下の場合における平均熱膨張率が25×10-7/℃以上55×10-7/℃以下である。なお、「平均熱膨張率」としたのは、ガラスの温度が20℃以上300℃以下の場合における当該ガラスの熱膨張率を測定する際、実際には熱膨張率の平均値を測定するためである。
本発明は上述した実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、上述した実施形態に開示された種々の技術的手段を適宜組み合わせて得られる実施形態についても、本発明の技術的範囲に含まれる。
以下、本発明の実施例に係る測定用デュワー瓶1を用いた、フォトルミネッセンス法による試料4中の不純物の濃度測定について、本発明の比較例に係る測定用デュワー瓶と比較しつつ説明する。なお、本発明の比較例に係る測定用デュワー瓶も、内筒デュワー瓶と外筒デュワー瓶(ともに不図示)との二重構造になっている。本発明の比較例に係る内筒デュワー瓶および外筒デュワー瓶は、ガラスの成分および平均熱膨張率以外、本発明の実施例に係る内筒デュワー瓶2および外筒デュワー瓶3と同様の構成である。
本発明の実施例1~3に係る測定用デュワー瓶1、および本発明の比較例1~3に係る測定用デュワー瓶のそれぞれについて、形成材料となるガラスの成分および平均熱膨張率を下記の表1に示す。なお、ガラスの組成成分(SiO2等)は、波長分散型蛍光X線分析装置(WDX)を用いた検量線法によって求めた。また、ガラスの平均熱膨張率は、当該ガラスの温度が20~300℃の場合の平均熱膨張係数を、熱機械分析装置(TMA)を用いて測定した。
本発明の実施例1に係る外筒デュワー瓶3は、上記の表1におけるガラスAで作製されたものであった。前記のガラスAで作製された外筒デュワー瓶3を備えた測定用デュワー瓶1を用いて、サンプルホルダ111に試料4を36枚セットして、最初(1回目)の濃度測定を行った。最初の濃度測定の終了後、内筒デュワー瓶2の真空(断熱)層の真空度を測定した。測定した結果、内筒デュワー瓶2の真空(断熱)層の真空度が1×10-4Paのままであることが判明した。よって、前記の〔真空引き工程〕の欄で説明した真空引き作業を行うことなく、2回目の濃度測定を行うことができた。
(比較例1)
本発明の比較例1に係る外筒デュワー瓶は、上記の表1におけるガラスAで作製されたものであった。前記のガラスAで作製された外筒デュワー瓶を備えた測定用デュワー瓶を用いて、サンプルホルダ111に試料4を36枚セットして、最初(1回目)の濃度測定を行った。最初の濃度測定の終了後、内筒デュワー瓶の真空(断熱)層の真空度を測定した。測定した結果、内筒デュワー瓶の真空(断熱)層の真空度が6×10-2Paに低下していることが判明した。そのため、前記の〔真空引き工程〕の欄で説明した真空引き作業を行った。
本発明の比較例2に係る測定用デュワー瓶は、本発明の比較例1に係る測定用デュワー瓶と同じものを使用した。そして、サンプルホルダ111に試料4を36枚セットして、最初(1回目)の濃度測定を行った。最初の濃度測定の終了後、内筒デュワー瓶の真空(断熱)層の真空度を測定した。測定した結果、内筒デュワー瓶の真空(断熱)層の真空度が6×10-2Paに低下していることが判明した。
本発明の比較例3に係る外筒デュワー瓶は、上記の表1におけるガラスBで作製されたものであった。そして、比較例2と同様の操作を行った。最初の濃度測定の終了後、内筒デュワー瓶の真空(断熱)層の真空度を測定した。測定した結果、内筒デュワー瓶の真空(断熱)層の真空度が7×10-2Paに低下していることが判明した。
4 試料(シリコン)
5 液体ヘリウム
100 フォトルミネッセンス測定装置
S2 加工/検査工程(濃度測定工程)
Claims (6)
- シリコンに含まれる不純物の濃度を、液体ヘリウム中でフォトルミネッセンス法によって測定するときに用いられるガラス製のデュワー瓶であって、
前記ガラスは、SiO2の含有量が65重量%以上75重量%以下であり、かつ、前記ガラスの温度が20℃以上300℃以下の場合における平均熱膨張率が25×10-7/℃以上55×10-7/℃以下であることを特徴とするデュワー瓶。 - 前記ガラスは、B2O3の含有量が10重量%以上30重量%以下であることを特徴とする請求項1に記載のデュワー瓶。
- 前記不純物は、P、B、AlおよびAsの少なくともいずれか1種の原子であることを特徴とする請求項1または2に記載のデュワー瓶。
- 請求項1から3のいずれか1項に記載のデュワー瓶を備えていることを特徴とするフォトルミネッセンス測定装置。
- シリコンに含まれる不純物の濃度を測定する濃度測定方法であって、
SiO2の含有量が65重量%以上75重量%以下であり、かつ、ガラスの温度が20℃以上300℃以下の場合における平均熱膨張率が25×10-7/℃以上55×10-7/℃以下の前記ガラスで形成されたデュワー瓶に、液体ヘリウムと前記シリコンとを収容して、前記不純物の濃度をフォトルミネッセンス法によって測定することを特徴とする濃度測定方法。 - SiO2の含有量が65重量%以上75重量%以下であり、かつ、ガラスの温度が20℃以上300℃以下の場合における平均熱膨張率が25×10-7/℃以上55×10-7/℃以下の前記ガラスで形成されたデュワー瓶に、液体ヘリウムとシリコンとを収容して、前記シリコンに含まれる不純物の濃度を測定する濃度測定工程を含んでいることを特徴とするシリコンの製造方法。
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