WO2022007540A1 - 一种曝光方法及曝光装置 - Google Patents

一种曝光方法及曝光装置 Download PDF

Info

Publication number
WO2022007540A1
WO2022007540A1 PCT/CN2021/097398 CN2021097398W WO2022007540A1 WO 2022007540 A1 WO2022007540 A1 WO 2022007540A1 CN 2021097398 W CN2021097398 W CN 2021097398W WO 2022007540 A1 WO2022007540 A1 WO 2022007540A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
exposure
current
layer pattern
current layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/097398
Other languages
English (en)
French (fr)
Inventor
周晓方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changxin Memory Technologies Inc
Original Assignee
Changxin Memory Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Publication of WO2022007540A1 publication Critical patent/WO2022007540A1/zh
Priority to US17/580,778 priority Critical patent/US20220137520A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers

Definitions

  • the present application relates to the technical field of lithography, and in particular, to an exposure method and an exposure device.
  • the exposure machine can project the pattern on the photomask onto the photoresist-coated substrate, so that the film layer on the substrate can be patterned through subsequent development and etching processes.
  • exposure machines have been widely used in the field of integrated circuit manufacturing.
  • the exposure machine sequentially exposes each wafer in the wafer group according to a preset sequence.
  • a vacant wafer appears in the wafer group, no wafer is exposed on the carrier table of the exposure machine corresponding to the vacant wafer. , resulting in a shorter effective exposure time of the exposure machine, a reduction in the number of wafers exposed per unit time, and a decrease in the production capacity of the exposure machine.
  • the present application provides an exposure method and an exposure device to improve the productivity of the exposure machine.
  • an embodiment of the present application provides an exposure method, which is performed by an exposure machine, the exposure machine includes a first bearing platform and a second bearing platform, the first bearing platform and the second bearing platform work alternately, and the exposure method includes: extracting The exposure rules of the first layer pattern or the front layer pattern of each wafer in the current wafer group, the exposure rules include the corresponding relationship between the wafer number and the carrier, wherein the arrangement order of the wafer number identifies the exposure order of the corresponding wafer;
  • an embodiment of the present application further provides an exposure device, including: a rule extraction module for extracting the exposure rules of the first layer pattern or the front layer pattern of each wafer in the current wafer group, and the exposure rules include the wafer The corresponding relationship between the number and the carrier, wherein the arrangement order of the wafer number identifies the exposure order of the corresponding wafer;
  • a number acquisition module used for acquiring the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group;
  • the rule obtaining module is used to remove the number of at least one vacant wafer in the exposure rule of the current layer pattern, move the wafer number corresponding to the same carrier table to the wafer number of the number of each vacant wafer in turn, and fill in the number Vacant bits to obtain the exposure rules of the current layer graphics;
  • the exposure execution module is used for exposing the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern.
  • the exposure rules include the corresponding relationship between the wafer numbers and the loading table, wherein the arrangement of the wafer numbers Sequentially identifies the exposure sequence of the corresponding wafer, obtains the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group, and removes the exposure rules of the current layer pattern.
  • the number of at least one vacant wafer is moved forward in sequence after the sequence corresponding to the same carrier and the wafer number of the number of each vacant wafer, and the numbered vacancies are filled to obtain the exposure rules of the current layer pattern.
  • the exposure rule of the layer pattern exposes the current layer pattern of each wafer in the current wafer group, so that when there is a vacant wafer, the wafers located after the vacant wafer in the same carrier are exposed in advance in order to avoid the appearance of the carrier. No-load situation, thus improving the production capacity of the exposure machine.
  • FIG. 1 is a schematic flowchart of an exposure method provided by an embodiment of the present application.
  • FIG. 2 is a diagram of the correspondence between a loading table and a wafer number according to an embodiment of the present application
  • FIG. 3 is a diagram of a corresponding relationship between another carrier table and a wafer number according to an embodiment of the present application
  • FIG. 4 is a corresponding relationship diagram of another carrier table and wafer number provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of an exposure device according to an embodiment of the present application.
  • the embodiment of the present application provides an exposure method, which is performed by an exposure machine.
  • the exposure machine includes a first bearing table and a second bearing table, and the first bearing table and the second bearing table work alternately.
  • the exposure method includes: extracting a current wafer group
  • the exposure rules of the first layer pattern or the front layer pattern of each wafer in the above, the exposure rules include the corresponding relationship between the wafer number and the carrier, wherein the arrangement order of the wafer number identifies the exposure order of the corresponding wafer;
  • the exposure rules include the corresponding relationship between the wafer numbers and the loading table, wherein the arrangement of the wafer numbers Sequentially identifies the exposure sequence of the corresponding wafer, obtains the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group, and removes the exposure rules of the current layer pattern.
  • the number of at least one vacant wafer is moved forward in sequence after the sequence corresponding to the same carrier and the wafer number of the number of each vacant wafer, and the numbered vacancies are filled to obtain the exposure rules of the current layer pattern.
  • the exposure rule of the layer pattern exposes the current layer pattern of each wafer in the current wafer group, so that when there is a vacant wafer, the wafers located after the vacant wafer in the same carrier are exposed in advance in order to avoid the appearance of the carrier. No-load situation, thus improving the production capacity of the exposure machine.
  • FIG. 1 is a schematic flowchart of an exposure method provided by an embodiment of the present application.
  • the exposure method is performed by an exposure machine, wherein the exposure machine includes a first bearing table and a second bearing table, and the first bearing table and the second bearing table work alternately.
  • the exposure method includes the following:
  • Step 110 Extract the exposure rules of the first layer pattern or the front layer pattern of each wafer in the current wafer group, the exposure rules include the corresponding relationship between the wafer number and the carrier, wherein the arrangement order of the wafer number identifies the corresponding wafer. exposure sequence.
  • the first layer pattern is the pattern exposed for the first time in each wafer in the current wafer group, that is, the pattern exposed before any other pattern
  • the front layer pattern is the pattern of the last exposure of the current layer pattern in the current wafer group , in addition, when the layer pattern is the pattern to be exposed in the current wafer group.
  • the wafer numbers corresponding to the same carrier are sequentially increased, and the wafer numbers corresponding to the first carrier and the wafers corresponding to the second carrier are alternately arranged in the exposure rules of the first layer pattern or the front layer pattern.
  • the numbers increase sequentially.
  • FIG. 2 is a corresponding relationship diagram between a carrier table and a wafer number provided by an embodiment of the present application.
  • FIG. 2 takes the current wafer group including 25 wafers as an example for illustration but not limitation. In other implementations of this embodiment, the number of wafers in the current wafer group may also be other values.
  • the wafers numbered 1, 2, 3...23, 24, 25 alternately correspond to the first carrier and the second carrier in the order of wafer numbers. In the actual exposure process, the first carrier is alternately used in turn.
  • the stage and the second stage expose wafers numbered 1, 2, 3... 23, 24, 25.
  • the wafer numbered 1 is first exposed on the first stage, then the wafer numbered 2 is exposed on the second stage, and then the wafer numbered 3 is exposed on the first stage, and then the wafer numbered 3 is exposed on the first stage.
  • the wafer numbered 4 is exposed on the second stage, and so on, the first stage and the second stage are alternately used to expose the wafers numbered 5, 6, 7... 23, 24, 25.
  • Step 120 Acquire the serial number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group.
  • the determined vacant wafers may be, for example, wafers numbered 5 and 7, respectively.
  • the number of the vacant wafers is marked with a dotted frame.
  • the wafer exposure number 6 is performed on the stage.
  • the wafer numbered 6 on the second stage needs to be aligned, calibrated and other operations before exposure, which will cause time consuming and cause the exposure machine to not be able to perform continuous exposure.
  • the number of the vacant wafer corresponding to the current layer pattern can be determined, for example, the number 5 in FIG. 2 and 7.
  • Step 130 Remove the number of at least one vacant wafer in the exposure rule of the current layer pattern, move the wafer number corresponding to the same carrier in the sequence of the number of each vacant wafer forward in sequence, and fill the vacant position of the number, To get the exposure rules of the current layer graphics.
  • the number of the vacant wafers is removed from the exposure rule of the current layer pattern, for example, the numbers 5 and 7 in Figure 2 are removed, and the sequence corresponding to the same carrier is followed by the number of the vacant wafers.
  • the circle numbers are moved forward in sequence to fill up the vacancies in the numbers.
  • the wafer numbers 9, 11, 13...21, 23, and 25 corresponding to the first carrier in Figure 2 are moved forward by two positions in turn, and Figure 3 is obtained. Exposure rules for the current layer graphics shown.
  • Step 140 Expose the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern.
  • the exposure rules include the corresponding relationship between the wafer numbers and the loading table, wherein the arrangement order of the wafer numbers Identify the exposure sequence of the corresponding wafer, obtain the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group, and remove the exposure rules of the current layer pattern. For the number of at least one vacant wafer, move the wafer number corresponding to the same carrier to the wafer number of the number of each vacant wafer in turn, and fill in the vacant position of the number to obtain the exposure rules of the current layer pattern.
  • the exposure rule of the pattern exposes the current layer pattern of each wafer in the current wafer group, so that when there is a vacant wafer, the wafers located behind the vacant wafer in the same carrier are exposed in advance in order to avoid the carrier table being empty. load, thereby increasing the production capacity of the exposure machine.
  • exposing the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern may include: sequentially extracting wafers according to the order of the wafer numbers in the exposure rule of the current layer pattern.
  • the corresponding wafers in the circle group are alternately placed on the first stage and the second stage for exposure of the current layer pattern.
  • the current layer pattern of each wafer in the current wafer group may further include: according to the sequence of the numbers of the wafers in the current wafer group from small to large, The wafers in the current wafer group are sequentially placed in the wafer cassette.
  • this setting method enables the wafers in the wafer cassette to be extracted one by one from one side during the wafer exposure process. damage to other wafers placed on both sides of the wafer.
  • the method may further include: judging the corresponding layer patterns of the wafers in the next wafer group. Whether the exposure condition is the same as the exposure condition corresponding to the current layer pattern of each wafer in the current wafer group, if so, according to the stage information corresponding to the last exposed wafer in the current wafer group and each wafer in the next wafer group.
  • the exposure conditions of the current layer pattern of the circle form the exposure rules of the current layer pattern of the next wafer group, and according to the exposure rules of the current layer pattern of the next wafer group, the current layer pattern of each wafer in the next wafer group is determined. Graphics are exposed.
  • the exposure conditions may include the number of the photomask used in the wafer exposure process, the illumination mode, the type of photoresist, and the like.
  • the current layer pattern of each wafer in the next wafer group can be exposed without changing any parameters of the exposure machine.
  • another carrier other than the last exposed wafer in the current wafer group is used to carry the first exposed wafer in the next wafer group, so that the exposure machine is placed between the two groups of wafer groups. Uninterrupted work in alternating time periods to avoid capacity drop.
  • FIG. 4 is a corresponding relationship diagram of another carrier table and wafer number provided by an embodiment of the present application.
  • it also includes the corresponding relationship between the wafer number of each wafer in the next wafer group and the carrier table (in the dotted line frame in FIG. 4 ).
  • the last exposed wafer number of the current wafer group is: 24. It corresponds to the second carrier, so the wafer number 1 of the first exposed wafer in the next wafer group corresponds to the first carrier, and is arranged at the end of the current wafer group corresponding to the first carrier. After a wafer number 25.
  • FIG. 5 is a schematic structural diagram of an exposure device provided by an embodiment of the present application.
  • the exposure device may specifically include: a rule extraction module 210, which is used to extract the exposure rules of the first layer pattern or the front layer pattern of each wafer in the current wafer group, and the exposure rules include the wafer number and the bearing table. Corresponding relationship, wherein, the arrangement order of the wafer numbers identifies the exposure order of the corresponding wafers.
  • the number acquisition module 220 is configured to acquire the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group.
  • the rule obtaining module 230 is used to remove the number of at least one vacant wafer in the exposure rule of the current layer pattern, move the wafer number corresponding to the same carrier in the order of the number of each vacant wafer forward in sequence, and make up Number the vacancies to obtain the exposure rules of the current layer graphics.
  • the exposure execution module 240 is configured to expose the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern.
  • the exposure execution module can be specifically used for:
  • the corresponding wafers in the wafer cassette are sequentially extracted and placed alternately on the first stage and the second stage for exposure of the current layer.
  • the exposure device may further include:
  • the wafer placement module is used for exposing the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern, according to the sequence of the numbers of the wafers in the current wafer group from small to large.
  • the wafers in the current wafer group are sequentially placed in the wafer cassette.
  • the exposure device may further include:
  • the exposure condition judgment module is used for judging the exposure condition corresponding to the current layer pattern of each wafer in the next wafer group after exposing the current layer pattern of each wafer in the current wafer group according to the exposure rule of the current layer pattern Whether the exposure conditions corresponding to the current layer pattern of each wafer in the current wafer group are the same.
  • the rule forming module is used for judging that the exposure conditions corresponding to the current layer patterns of each wafer in the next wafer group are the same as the exposure conditions corresponding to the current layer patterns of each wafer in the current wafer group, according to the current wafer group.
  • the information on the stage corresponding to the last exposed wafer and the exposure conditions of the current layer pattern of each wafer in the next wafer group form the exposure rules of the current layer pattern of the next wafer group, and according to the next wafer group
  • the exposure rule of the current layer pattern exposes the current layer pattern of each wafer in the next wafer group.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种曝光方法及曝光装置，曝光方法包括：提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系（110）；根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号（120）；剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则（130）；根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光（140）。这种曝光方法避免了承载台出现空载的情况，提升了曝光机的产能。

Description

一种曝光方法及曝光装置
交叉引用
本申请引用于2020年7月7日递交的名称为“一种曝光方法及曝光装置”的第2020106474191号中国专利申请，其通过引用被全部并入本申请。
技术领域
本申请涉及光刻技术领域，尤其涉及一种曝光方法及曝光装置。
背景技术
曝光机能够将光掩膜版上的图案投影于涂有光刻胶的基板上，以便后续经过显影和刻蚀工艺对基板上的膜层进行图形化。目前曝光机已广泛应用于集成电路制造领域。
相关技术中曝光机按照预先设定的顺序依次曝光晶圆组中的各晶圆，当晶圆组中出现空缺晶圆时，空缺晶圆对应的曝光机的承载台上并没有晶圆被曝光，导致曝光机的有效曝光时长变短，单位时间内曝光的晶圆数量减少，曝光机产能下降。
发明内容
本申请提供一种曝光方法及曝光装置，以提高曝光机产能。
第一方面，本申请实施例提供了一种曝光方法，采用曝光机执行，曝光机包括第一承载台和第二承载台，第一承载台和第二承载台交替工作，曝光方法包括：提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序；
根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号；
剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则；
根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光。
第二方面，本申请实施例还提供了一种曝光装置，包括：规则提取模块，用于提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序；
编号获取模块，用于根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号；
规则获得模块，用于剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则；
曝光执行模块，用于根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光。
本申请实施例的技术方案，通过提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序，根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号，剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺 序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光，使得存在空缺晶圆时，同一承载台中位于空缺晶圆之后的各晶圆依次提前曝光，避免了该承载台出现空载的情况，进而提升了曝光机的产能。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1为本申请实施例提供的一种曝光方法的流程示意图；
图2为本申请实施例提供的一种承载台与晶圆编号的对应关系图；
图3为本申请实施例提供的另一种承载台与晶圆编号的对应关系图；
图4为本申请实施例提供的又一种承载台与晶圆编号的对应关系图；
图5为本申请实施例提供的一种曝光装置的结构示意图。
具体实施方式
为更进一步阐述本申请为达成预定申请目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本申请提出的一种曝光方法及曝光装置的具体实施方式、结构、特征及其功效，详细说明如后。
本申请实施例提供了一种曝光方法，采用曝光机执行，曝光机包括第一承载台和第二承载台，第一承载台和第二承载台交替工作，曝光方法包括：提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序；
根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组 内的至少一个空缺晶圆的编号；
剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则；
根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光。
本申请实施例的技术方案，通过提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序，根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号，剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光，使得存在空缺晶圆时，同一承载台中位于空缺晶圆之后的各晶圆依次提前曝光，避免了该承载台出现空载的情况，进而提升了曝光机的产能。
以上是本申请的核心思想，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下，所获得的所有其他实施例，都属于本申请保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本申请，但是本申请还可以采用其他不同于在此描述的其他实施方式来实施，本领域技术人员可 以在不违背本申请内涵的情况下做类似推广，因此本申请不受下面公开的具体实施例的限制。
其次，本申请结合示意图进行详细描述，在详述本申请实施例时，为便于说明，表示装置器件结构的示意图并非按照一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本申请保护的范围。此外，在实际制作中应包含长度、宽度以及高度的三维空间尺寸。
图1是本申请实施例提供的一种曝光方法的流程示意图。该曝光方法采用曝光机执行，其中，曝光机包括第一承载台和第二承载台，第一承载台和第二承载台交替工作。具体的，如图1所示，曝光方法包括如下：
步骤110：提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序。
其中，首层图形为当前晶圆组内各晶圆中第一次曝光的图形，即先于其他任意图形曝光的图形，前层图形为当前晶圆组中当层图形的上一次曝光的图形，此外，当层图形为当前晶圆组中即将曝光的图形。
在一些实施例中，同一承载台对应的晶圆编号依次增大，首层图形或前层图形的曝光规则中交替设置的第一承载台对应的晶圆编号和第二承载台对应的晶圆编号依次增大。
示例性的，图2是本申请实施例提供的一种承载台与晶圆编号的对应关系图。图2以当前晶圆组包括25个晶圆为例进行说明而非限定，在本实施例的其他实施方式中，当前晶圆组中晶圆的数量还可以为其他值。参考图2，编号依次为1，2，3……23，24，25的晶圆按照晶圆编号顺序交替对应第一承载台 和第二承载台，实际曝光过程中，依次交替采用第一承载台和第二承载台曝光编号为1，2，3……23，24，25的晶圆。具体的，先在第一承载台上曝光编号为1的晶圆，再在第二承载台上曝光编号为2的晶圆，然后在第一承载台上曝光编号为3的晶圆，之后在第二承载台上曝光编号为4的晶圆，以此类推，依次交替采用第一承载台和第二承载台曝光编号为5，6，7……23，24，25的晶圆。
步骤120：根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号。
需要说明的是，当当前晶圆组中存在空缺晶圆时，当前晶圆组中各晶圆的当层图形曝光到空缺晶圆时，空缺晶圆对应的承载台上没有晶圆进行曝光，造成曝光机台的产能降低。
示例性的，继续参见图2，确定的空缺晶圆例如可以为编号分别为5和7的晶圆，图2以虚线框标识空缺晶圆编号。当晶圆编号为4的晶圆在第二承载台上完成曝光后，由于晶圆编号为5的晶圆空缺，第一承载台上将不会有晶圆进行曝光，而是继续在第二承载台上进行编号为6的晶圆曝光。第二承载台上编号为6的晶圆在进行曝光之前还需要进行对准，校正等动作，该动作会造成时间耗费，导致曝光机台不能进行连续曝光。
值得注意的是，同一晶圆的不同层图形采用同一承载台承载曝光，以减小不同层的对准误差。因此，通过比较首层图形或前层图形中对应的晶圆的编号与当层图形对应的晶圆的编号，可确定当层图形对应的空缺晶圆的编号，例如为图2中的编号5和7。
步骤130：剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将 同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则。
如图2所示，在当层图形的曝光规则中剔除空缺晶圆的编号，例如剔除图2中的编号5和7，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，例如将图2中与第一承载台对应的晶圆编号9、11、13……21、23、25依次前移两个位置，获得如图3所示的当层图形的曝光规则。
步骤140：根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光。
本实施例的技术方案，通过提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序，根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号，剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光，使得存在空缺晶圆时，同一承载台中位于空缺晶圆之后的各晶圆依次提前曝光，避免了该承载台出现空载的情况，进而提升了曝光机的产能。
在一些实施例中，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光可以包括：按照当层图形的曝光规则中的晶圆编号的排列顺序，依次抽取晶圆组中对应的晶圆交替放置于第一承载台和第二承载台上进行当层图形的曝光。
示例性的，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光之前，还可以包括：按照当前晶圆组中各晶圆的编号从小到大的顺序，将当前晶圆组中的各晶圆依次放置于晶圆盒内。
需要说明的是，这样的设置方式使得在晶圆的曝光过程中，晶圆盒中的晶圆从一侧开始逐一被抽取，一方面降低了机械手的抽取难度，另一方面避免了抽取中间位置的晶圆时损伤该晶圆两侧放置的其他晶圆。
在本实施例中，根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光之后，还可以包括：判断下一晶圆组中各晶圆的当层图形对应的曝光条件与当前晶圆组中各晶圆的当层图形对应的曝光条件是否相同，若是，则根据当前晶圆组中最后曝光的晶圆对应的承载台信息以及下一晶圆组中各晶圆的当层图形的曝光条件，形成下一晶圆组的当层图形的曝光规则，并按照下一晶圆组的当层图形的曝光规则对下一晶圆组中各晶圆的当层图形进行曝光。
其中，曝光条件可以包括晶圆曝光过程中使用的光掩膜版的编号、照明模式以及光刻胶类型等。
需要说明的是，曝光条件相同时，可在不更改曝光机任何参数的条件下曝光下一晶圆组中的各晶圆的当层图形，为保证当前晶圆组和下一晶圆组曝光的连续性，采用承载当前晶圆组中最后曝光的晶圆之外的另一承载台承载下一晶圆组中的第一个曝光的晶圆，进而使得曝光机在两组晶圆组的交替时间段内无间断的工作，避免产能下降。
示例性的，图4是本申请实施例提供的另一种承载台与晶圆编号的对应关系图。在图3的基础上，还包括下一晶圆组中各晶圆的晶圆编号与承载台的对应关系(图4虚线框内)，具体的，当前晶圆组最后曝光的晶圆编号为24， 其对应第二承载台，因此下一晶圆组中第一个曝光的晶圆的晶圆编号1对应第一承载台，且紧排于当前晶圆组中对应第一承载台的最后一个晶圆编号25之后。
图5是本申请实施例提供的一种曝光装置的结构示意图。如图5所示，曝光装置具体可以包括：规则提取模块210，用于提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，曝光规则包括晶圆编号与承载台的对应关系，其中，晶圆编号的排列顺序标识对应晶圆的曝光顺序。
编号获取模块220，用于根据当前晶圆组中各晶圆的当层图形的实际曝光信息，获取当前晶圆组内的至少一个空缺晶圆的编号。
规则获得模块230，用于剔除当层图形的曝光规则中的至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则。
曝光执行模块240，用于根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光。
在本实施例中，曝光执行模块具体可以用于：
按照当层图形的曝光规则中的晶圆编号的排列顺序，依次抽取晶圆盒中对应的晶圆交替放置于第一承载台和第二承载台上进行当前层的曝光。
在本实施例中，曝光装置还可以包括：
晶圆放置模块，用于在根据当层图形的曝光规则对当前晶圆组中各晶圆的当层图形进行曝光之前，按照当前晶圆组中各晶圆的编号从小到大的顺序，将当前晶圆组中的各晶圆依次放置于晶圆盒内。
在本实施例中，曝光装置还可以包括：
曝光条件判断模块，用于在根据当层图形的曝光规则对当前晶圆组中各 晶圆的当层图形进行曝光之后，判断下一晶圆组中各晶圆的当层图形对应的曝光条件与当前晶圆组中各晶圆的当层图形对应的曝光条件是否相同。
规则形成模块，用于在判断下一晶圆组中各晶圆的当层图形对应的曝光条件与当前晶圆组中各晶圆的当层图形对应的曝光条件相同时，根据当前晶圆组中最后曝光的晶圆对应的承载台信息以及下一晶圆组中各晶圆的当层图形的曝光条件，形成下一晶圆组的当层图形的曝光规则，并按照下一晶圆组的当层图形的曝光规则对下一晶圆组中各晶圆的当层图形进行曝光。
注意，上述仅为本申请的较佳实施例及所运用技术原理。本领域技术人员会理解，本申请不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整、相互结合和替代而不会脱离本申请的保护范围。因此，虽然通过以上实施例对本申请进行了较为详细的说明，但是本申请不仅仅限于以上实施例，在不脱离本申请构思的情况下，还可以包括更多其他等效实施例，而本申请的范围由所附的权利要求范围决定。

Claims (10)

  1. 一种曝光方法，采用曝光机执行，所述曝光机包括第一承载台和第二承载台，所述第一承载台和所述第二承载台交替工作，其特征在于，所述曝光方法包括：
    提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，所述曝光规则包括晶圆编号与承载台的对应关系，其中，所述晶圆编号的排列顺序标识对应晶圆的曝光顺序；
    根据所述当前晶圆组中各晶圆的当层图形的实际曝光信息，获取所述当前晶圆组内的至少一个空缺晶圆的编号；
    剔除所述当层图形的曝光规则中的所述至少一个空缺晶圆的编号，将同一承载台对应的排列顺序后于各所述空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则；
    根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光。
  2. 根据权利要求1所述的曝光方法，其特征在于，根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光包括：
    按照所述当层图形的曝光规则中的晶圆编号的排列顺序，依次抽取晶圆盒中对应的晶圆交替放置于所述第一承载台和所述第二承载台上进行当层图形的曝光。
  3. 根据权利要求2所述的曝光方法，其特征在于，根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光之前，还包括：
    按照所述当前晶圆组中各晶圆的编号从小到大的顺序，将所述当前晶圆组中 的各晶圆依次放置于所述晶圆盒内。
  4. 根据权利要求1所述的曝光方法，其特征在于，根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光之后，还包括：
    判断下一晶圆组中各晶圆的当层图形对应的曝光条件与所述当前晶圆组中各晶圆的当层图形对应的曝光条件是否相同；
    若是，则根据当前晶圆组中最后曝光的晶圆对应的承载台信息以及所述下一晶圆组中各晶圆的当层图形的曝光条件，形成所述下一晶圆组的当层图形的曝光规则，并按照下一晶圆组的当层图形的曝光规则对所述下一晶圆组中各晶圆的当层图形进行曝光。
  5. 根据权利要求4所述的曝光方法，其特征在于，所述曝光条件包括光掩膜版的编号。
  6. 根据权利要求1所述的曝光方法，其特征在于，同一承载台对应的晶圆编号依次增大；
    所述首层图形或前层图形的曝光规则中交替设置的所述第一承载台对应的晶圆编号和所述第二承载台对应的晶圆编号依次增大。
  7. 一种曝光装置，其特征在于，包括：
    规则提取模块，用于提取当前晶圆组中各晶圆的首层图形或前层图形的曝光规则，所述曝光规则包括晶圆编号与承载台的对应关系，其中，所述晶圆编号的排列顺序标识对应晶圆的曝光顺序；
    编号获取模块，用于根据所述当前晶圆组中各晶圆的当层图的实际曝光信息，获取所述当前晶圆组内的至少一个空缺晶圆的编号；
    规则获得模块，用于剔除所述当层图形的曝光规则中的所述至少一个空缺晶 圆的编号，将同一承载台对应的排列顺序后于各所述空缺晶圆的编号的晶圆编号依次前移，补齐编号空缺位，以获得当层图形的曝光规则；
    曝光执行模块，用于根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光。
  8. 根据权利要求7所述的曝光装置，其特征在于，曝光执行模块具体用于：
    按照所述当层图形的曝光规则中的晶圆编号的排列顺序，依次抽取晶圆盒中对应的晶圆交替放置于第一承载台和第二承载台上进行当层图形的曝光。
  9. 根据权利要求7所述的曝光装置，其特征在于，还包括：
    晶圆放置模块，用于在根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光之前，按照所述当前晶圆组中各晶圆的编号从小到大的顺序，将所述当前晶圆组中的各晶圆依次放置于所述晶圆盒内。
  10. 根据权利要求7所述的曝光装置，其特征在于，还包括：
    曝光条件判断模块，用于在根据所述当层图形的曝光规则对所述当前晶圆组中各晶圆的当层图形进行曝光之后，判断下一晶圆组中各晶圆的当层图形对应的曝光条件与所述当前晶圆组中各晶圆的当层图形对应的曝光条件是否相同；
    规则形成模块，用于在判断下一晶圆组中各晶圆的当层图形对应的曝光条件与所述当前晶圆组中各晶圆的当层图形对应的曝光条件相同时，根据当前晶圆组中最后曝光的晶圆对应的承载台信息以及所述下一晶圆组中各晶圆的当层图形的曝光条件，形成所述下一晶圆组的当层图形的曝光规则，并按照下一晶圆组的当层图形的曝光规则对所述下一晶圆组中各晶圆的当层图形进行曝光。
PCT/CN2021/097398 2020-07-07 2021-05-31 一种曝光方法及曝光装置 Ceased WO2022007540A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/580,778 US20220137520A1 (en) 2020-07-07 2022-01-21 Exposure method and exposure device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010647419.1 2020-07-07
CN202010647419.1A CN113900356B (zh) 2020-07-07 2020-07-07 一种曝光方法及曝光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/580,778 Continuation US20220137520A1 (en) 2020-07-07 2022-01-21 Exposure method and exposure device

Publications (1)

Publication Number Publication Date
WO2022007540A1 true WO2022007540A1 (zh) 2022-01-13

Family

ID=79186950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/097398 Ceased WO2022007540A1 (zh) 2020-07-07 2021-05-31 一种曝光方法及曝光装置

Country Status (3)

Country Link
US (1) US20220137520A1 (zh)
CN (1) CN113900356B (zh)
WO (1) WO2022007540A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116859675A (zh) * 2022-03-28 2023-10-10 长鑫存储技术有限公司 曝光处理方法、装置及系统
US12108591B2 (en) 2020-04-27 2024-10-01 Changxin Memory Technologies, Inc. Semiconductor structure, method for forming semiconductor structure and memory

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090123874A1 (en) * 2007-11-14 2009-05-14 Tadashi Nagayama Exposure method, exposure apparatus, and method for manufacturing device
CN101504510A (zh) * 2008-02-04 2009-08-12 联华电子股份有限公司 进行光刻工艺的方法
CN103579058A (zh) * 2012-07-24 2014-02-12 上海宏力半导体制造有限公司 一种多批次连续运行的方法
CN104076615A (zh) * 2014-04-22 2014-10-01 上海华力微电子有限公司 具有硅片刻号读取及硅片存储装置的双曝光平台之曝光机
CN104898378A (zh) * 2015-05-27 2015-09-09 上海华力微电子有限公司 一种晶圆曝光顺序的优化方法
CN106483778A (zh) * 2015-08-31 2017-03-08 上海微电子装备有限公司 基于相对位置测量的对准系统、双工件台系统及测量系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1353229A1 (en) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP3966211B2 (ja) * 2002-05-08 2007-08-29 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
US6876439B2 (en) * 2003-05-29 2005-04-05 Asml Holding N.V. Method to increase throughput in a dual substrate stage double exposure lithography system
US20090191723A1 (en) * 2008-01-30 2009-07-30 Chi-Ching Huang Method of performing lithographic processes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090123874A1 (en) * 2007-11-14 2009-05-14 Tadashi Nagayama Exposure method, exposure apparatus, and method for manufacturing device
CN101504510A (zh) * 2008-02-04 2009-08-12 联华电子股份有限公司 进行光刻工艺的方法
CN103579058A (zh) * 2012-07-24 2014-02-12 上海宏力半导体制造有限公司 一种多批次连续运行的方法
CN104076615A (zh) * 2014-04-22 2014-10-01 上海华力微电子有限公司 具有硅片刻号读取及硅片存储装置的双曝光平台之曝光机
CN104898378A (zh) * 2015-05-27 2015-09-09 上海华力微电子有限公司 一种晶圆曝光顺序的优化方法
CN106483778A (zh) * 2015-08-31 2017-03-08 上海微电子装备有限公司 基于相对位置测量的对准系统、双工件台系统及测量系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12108591B2 (en) 2020-04-27 2024-10-01 Changxin Memory Technologies, Inc. Semiconductor structure, method for forming semiconductor structure and memory
CN116859675A (zh) * 2022-03-28 2023-10-10 长鑫存储技术有限公司 曝光处理方法、装置及系统

Also Published As

Publication number Publication date
CN113900356A (zh) 2022-01-07
US20220137520A1 (en) 2022-05-05
CN113900356B (zh) 2023-03-21

Similar Documents

Publication Publication Date Title
US20220382160A1 (en) Method of cutting conductive patterns
WO2022007540A1 (zh) 一种曝光方法及曝光装置
US11686688B2 (en) Inspection apparatus and manufacturing method for semiconductor device
CN109696797B (zh) Lele双重图形工艺方法
CN103246155B (zh) 光刻版以及该光刻版的曝光方法
CN117950279B (zh) 一种图形关键尺寸量测方法、装置、电子设备及存储介质
CN121365645B (zh) 芯片版图的设计规则检查方法及相关设备
CN118550150A (zh) 光学临近修正方法
CN114706277B (zh) 一种套刻匹配方法
US8930860B2 (en) Layout decomposition method and method for manufacturing semiconductor device applying the same
CN117631441A (zh) 掩膜版图拆分方法及系统、设备和存储介质
CN105374746A (zh) 一种提升通孔层工艺窗口的方法
JP2001174975A (ja) 半導体装置の伝導配線マスクの製造方法
CN103855075B (zh) 刻蚀条件的采集方法
CN1354494A (zh) 可降低邻近效应的光刻制作方法
CN102683253A (zh) 一种提高图形线宽量测精度对准的方法
CN118068644A (zh) 刻蚀偏差的计算方法及系统、图形修正方法及掩膜版
US9436081B2 (en) Methods of modifying masking reticles to remove forbidden pitch regions thereof
CN113534615A (zh) 曝光剂量修正方法
US8533638B2 (en) Post-optical proximity correction photoresist pattern collapse rule
CN116009364B (zh) 一种晶圆曝光管理方法、装置、电子设备和系统
CN114815517B (zh) 一种光掩模曝光方法
JP2836391B2 (ja) 半導体集積回路作製用マスク及びその検査方法
JPH0258777B2 (zh)
CN118966137A (zh) 一种芯片的掩模拆分方法、装置、设备及介质

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21838498

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21838498

Country of ref document: EP

Kind code of ref document: A1