WO2021261122A1 - Structure and method for manufacturing structure - Google Patents

Abstract

Provided are a structure having excellent workability and a method for manufacturing the structure. The structure includes: a plurality of columnar bodies constituted by a conductor; a substrate on which the plurality of columnar bodies are disposed along the thickness direction, in a state of being mutually electrically insulated; and a metal layer which is provided on both surfaces of the substrate in the thickness direction.

Description

Structure and method of manufacturing the structure

The present invention relates to a structure in which a plurality of conductive columnar bodies are arranged in a state of being electrically insulated from each other and metal layers are provided on both sides of the substrate, and a method for manufacturing the structure.

Conventionally, metal foils have been used for various purposes such as electrically conductive members. Metal foil is also used for decoration and the like. Examples of the metal foil include aluminum foil, copper foil, titanium foil and the like. The thickness of the metal foil is about several hundred μm, for example, about 200 μm.

As mentioned above, the metal foil has a thickness of about several hundred μm, and is easily deformed and has poor workability when drilling or cutting. At present, there is no metal foil with excellent workability.

An object of the present invention is to provide a structure having excellent processability and a method for manufacturing the structure.

In order to achieve the above object, one aspect of the present invention is a plurality of columnar bodies composed of conductors and a plurality of columnar bodies electrically insulated from each other along the thickness direction. It provides a structure having a provided substrate and metal layers provided on both sides of the substrate in the thickness direction.

It is preferable that the substrate has an electrically insulating insulating film, and the plurality of columnar bodies are provided on the insulating film in a state of being electrically insulated from each other.
The insulating film is preferably composed of an anodic oxide film.
The metal layers provided on both sides in the thickness direction of the substrate are preferably made of the same type of metal.
The plurality of columnar bodies and the metal layer are preferably composed of copper.

Another aspect of the present invention is a first aspect in which one surface of an anodic oxide film having a plurality of pores extending in the thickness direction is plated with a first metal and one surface is coated with the first metal. It provides a method for manufacturing a structure, which comprises a coating step and a second coating step of coating the other surface of the anodic oxide film with a second metal from the other surface with a second metal.
The second coating step is preferably a plating step in which the other surface of the anodic oxide film is plated with the second metal and the other surface is coated with the second metal.
Between the first coating step and the second coating step, a metal projecting step of projecting a first metal filled in a plurality of pores of the anodic oxide film from the other surface of the anodic oxide film by the first coating step. It is preferable to have.
It is preferable that the first metal in the first coating step and the second metal in the second coating step are the same type of metal.
It is preferable that the first metal in the first coating step and the second metal in the second coating step are copper.

According to the present invention, it is possible to provide a structure having excellent workability.

It is a schematic sectional drawing which shows an example of the structure of embodiment of this invention. It is a schematic plan view which shows an example of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 1st example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 2nd example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 2nd example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 2nd example of the manufacturing method of the structure of embodiment of this invention. It is a schematic cross-sectional view which shows one step of the 2nd example of the manufacturing method of the structure of embodiment of this invention.

Hereinafter, the structure of the present invention and the method for manufacturing the structure will be described in detail based on the preferred embodiments shown in the accompanying drawings.
It should be noted that the figures described below are exemplary for explaining the present invention, and the present invention is not limited to the figures shown below.
In the following, "-" indicating the numerical range includes the numerical values described on both sides. For example, when ε _a is a numerical value α _b to a numerical value β _c , the range of _{ε a is a range including the numerical value α b} and the numerical value β _c , and is expressed in mathematical symbols as α _b ≤ ε _a ≤ β _c .
Humidity and time include error ranges generally tolerated in the art, unless otherwise stated.

The thickness of the metal foil is about several hundred μm, and the metal foil is easily deformed and difficult to process when drilling or cutting. However, as a result of diligent studies, it was found that the workability was excellent by providing metal layers on both sides of a substrate in which a plurality of conductive columnar bodies were arranged in a state of being electrically insulated from each other, leading to the present invention. rice field. Hereinafter, the structure will be specifically described.

[Example of structure]
FIG. 1 is a schematic cross-sectional view showing an example of a fine structure according to an embodiment of the present invention, and FIG. 2 is a schematic plan view showing an example of a fine structure according to an embodiment of the present invention. FIG. 2 is a plan view of the metal layer 20 of FIG. 1 as viewed from the surface 20a side.
The structure 10 shown in FIG. 1 includes a plurality of columnar bodies 12, a substrate 14 provided along the thickness direction in a state where the plurality of columnar bodies 12 are electrically insulated from each other, and a Dt in the thickness direction of the substrate 14. It has metal layers 20 and 22 provided on both sides of the above. Each of the plurality of columnar bodies 12 is composed of a conductor. The metal layer 20 is provided on the surface 14a of the substrate 14. The metal layer 22 is provided on the back surface 14b of the substrate 14.

The substrate 14 of the structure 10 has an electrically insulating insulating film 16. The plurality of columnar bodies 12 are arranged on the insulating film 16 in a state of being electrically insulated from each other. In this case, for example, the insulating film 16 has a plurality of pores 17 penetrating in the thickness direction Dt. The columnar body 12 is provided in the plurality of pores 17.
The plurality of columnar bodies 12 may be arranged in a state of being electrically insulated from each other, and the insulating film 16 is not always necessary.
Further, as shown in FIG. 2, the structure 10 has, for example, a rectangular outer shape. The outer shape of the structure 10 is not limited to a rectangle, and may be, for example, a circle. The outer shape of the structure 10 can be shaped according to the intended use, ease of manufacture, and the like.

The columnar body 12, the metal layer 20, and the metal layer 22 are formed by, for example, a plating method.
When the plating method is used, for example, the columnar body 12 and the metal layer 20 can be formed by the same plating step. Further, the columnar body 12 and the metal layer 22 can be formed by the same plating process.
The metal layers 20 and 22 provided on both sides of the substrate 14 in the thickness direction Dt are preferably made of the same type of metal. In this case, the metal layers 20 and 22 and the columnar body 12 may be made of the same kind of metal or may be made of different metals.
Further, the columnar body 12, the metal layer 20, and the metal layer 22 may be made of different metals.

The above-mentioned different metals mean that when two metals are compared, the types of constituent elements are different in the case of a single metal. Further, the above-mentioned different metals mean that in the case of an alloy, the types of the elements of the main component are different when the main components having a content of 50% by mass or more are compared.
Further, the same kind of metal means that when two metals are compared, in the case of a single metal, the types of constituent elements are the same. In the case of an alloy, when comparing the main components having a content of 50% by mass or more, it means that the types of the elements of the main components are the same.
To determine whether the columnar body and the metal layer are the same type of metal or different metals, the columnar body and the metal layer are taken out, and the columnar body and the metal layer are measured using a fluorescent X-ray (XRF) analyzer, respectively. Therefore, it is possible to distinguish between the columnar body and the metal layer by specifying the metal components.
Whether the metal layers are the same type of metal or different metals is determined by taking out each metal layer and measuring each metal layer using a fluorescent X-ray (XRF) analyzer. It can be distinguished by specifying the metal component.

By forming the structure 10 with the columnar body 12 and the metal layers 20 and 22 as described above, the strength is higher than that of the metal foil, and the structure 10 is deformed when drilling or cutting. It is difficult and has excellent workability compared to metal foil. As described above, the structure 10 has excellent workability. Further, the structure 10 is superior in workability as compared with the metal foil even if the insulating film 16 is provided.
The thickness ht of the structure 10 is preferably in the range of 5 to 500 μm, more preferably in the range of 10 to 300 μm, and further preferably 1 μm or more and 30 μm or less. If the thickness of the structure is within the above range, the workability is excellent.

Hereinafter, the configuration of the structure will be described more specifically.
[Columnar body]
As described above, the plurality of columnar bodies 12 are provided in a state of being electrically insulated from each other, and are composed of conductors.
The conductor constituting the columnar body is made of, for example, a metal. Specific examples of the metal preferably include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni) and the like. From the viewpoint of electrical conductivity, copper, gold, aluminum, and nickel are preferable, copper and gold are more preferable, and copper is most preferable.
The height H of the columnar body 12 in the thickness direction Dt is preferably 10 to 300 μm, more preferably 20 to 30 μm.

<Shape of columnar body>
The average diameter d of the columnar body 12 is preferably 1 μm or less, more preferably 5 to 500 nm, further preferably 20 to 400 nm, further preferably 40 to 200 nm, and even more preferably 50 to 200 nm. Most preferably, it is 100 nm.
Density of the columnar body 12 is preferably 20,000 / mm ² or more, more preferably 2,000,000 / mm ² or more, still more preferably 10,000,000 / mm ² or more, 50 million The number of pieces / mm ² or more is particularly preferable, and the number of pieces / mm ² or more is most preferable.
Further, the distance p between the centers of the adjacent columnar bodies 12 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and further preferably 50 nm to 140 nm.
The average diameter of the columnar body is obtained by photographing the surface of the insulating film from directly above at a magnification of 100 to 10000 times using a scanning electron microscope. In the photographed image, at least 20 columnar bodies having an annular shape around them are extracted, the diameter thereof is measured and used as the opening diameter, and the average value of these opening diameters is calculated as the average diameter of the columnar bodies.
As the magnification, the magnification in the above range can be appropriately selected so that a photographed image capable of extracting 20 or more columnar bodies can be obtained. For the opening diameter, the maximum value of the distance between the ends of the columnar body portion was measured. That is, since the shape of the opening of the columnar body is not limited to a substantially circular shape, when the shape of the opening is non-circular, the maximum value of the distance between the ends of the columnar body portion is set as the opening diameter. Therefore, for example, even in the case of a columnar body having a shape in which two or more columnar bodies are integrated, this is regarded as one columnar body, and the maximum value of the distance between the ends of the columnar body portions is set as the opening diameter. ..

[Metal layer]
The metal layers 20 and 22 (see FIG. 1) constitute the structure 10 (see FIG. 1). One of the metal layer 20 and the metal layer 22 can be formed in the same process as the columnar body 12. Therefore, from the viewpoint of the manufacturing method, it is preferable to use the same metal as the columnar body 12. For example, when formed by a plating method, copper (Cu), gold (Au), aluminum (Al) and nickel (Ni) are preferable, copper (Cu) and gold (Au) are more preferable, and copper (Cu) is preferable. More preferred.
Further, a noble metal can also be used for the metal layer. Noble metals are, for example, Au (gold), Ag (silver), platinum group (Ru, Rh, Pd, Os, Ir, Pt) and the like.
The thickness hm of the metal layer 20 and the thickness hj of the metal layer 22 are preferably 1 to 50 μm, and more preferably 5 to 20 μm.
Further, the thickness hm of the metal layer 20 and the thickness hj of the metal layer 22 may be the same or different. The same thickness of the thickness hm of the metal layer 20 and the thickness hj of the metal layer 22 is 0.9 ≦ (thickness hm) / (thickness hj) ≦ 1.1. The difference between the thickness hm of the metal layer 20 and the thickness hj of the metal layer 22 means that 0.9 ≦ (thickness hm) / (thickness hj) ≦ 1.1.

[Insulating film]
The insulating film is a state in which a plurality of columnar bodies 12 made of a conductor are electrically insulated from each other. The insulating film has a plurality of pores 17.
The length of the insulating film 16 in the thickness direction Dt is the same as the height H of the columnar body 12 described above. The length of the insulating film 16 in the thickness direction Dt, that is, the thickness of the insulating film 16 is preferably 10 to 300 μm, more preferably 20 to 30 μm.
The spacing between the columns in the insulating film is preferably 5 nm to 800 nm, more preferably 10 nm to 200 nm, and even more preferably 20 nm to 60 nm. When the distance between the columns in the insulating film is within this range, the insulating film sufficiently functions as an electrically insulating partition wall of the columnar body 12.
Here, the distance between the columns means the width between the adjacent columns, and the cross section of the structure 10 is observed with an electrolytic discharge scanning electron microscope at a magnification of 200,000 times, and the intervals between the adjacent columns are observed. The average value of the width measured at 10 points.
As will be described later, the insulating film is composed of, for example, an anodic oxide film 34 (see FIG. 9). The anodic oxide film 34 has a plurality of pores 32 (see FIG. 9). The pores 32 of the anodic oxide film 34 correspond to the pores 17 (see FIG. 1) of the insulating film 16.

<Average diameter of pores>
The average diameter of the pores is preferably 1 μm or less, more preferably 5 to 500 nm, further preferably 20 to 400 nm, even more preferably 40 to 200 nm, and even more preferably 50 to 100 nm. Most preferably. When the average diameter d of the pores 32 is 1 μm or less and is within the above range, a columnar body 12 having the above average diameter can be obtained.
The average diameter of the pores 32 is obtained by photographing the surface of the anodic oxide film 34 from directly above at a magnification of 100 to 10000 times using a scanning electron microscope. In the photographed image, at least 20 pores having a ring-shaped periphery are extracted, the diameter thereof is measured and used as the opening diameter, and the average value of these opening diameters is calculated as the average diameter of the pores.
As the magnification, the magnification in the above range can be appropriately selected so that a photographed image capable of extracting 20 or more pores can be obtained. For the opening diameter, the maximum value of the distance between the ends of the pore portions was measured. That is, since the shape of the opening of the pore is not limited to a substantially circular shape, when the shape of the opening is non-circular, the maximum value of the distance between the ends of the pore portion is set as the opening diameter. Therefore, for example, even in the case of a pore having a shape in which two or more pores are integrated, this is regarded as one pore, and the maximum value of the distance between the ends of the pore portions is set as the opening diameter. ..

Regarding the size of each part of the structure 10, unless otherwise specified, the structure 10 is cut in the thickness direction Dt, and the cross section of the cut cross section is observed using an FE-SEM (Field Emission-Scanning Electron Microscope). Is the average value obtained by measuring 10 points corresponding to each size.

[First example of a method for manufacturing a structure]
3 to 9 are schematic cross-sectional views showing a first example of a method for manufacturing a structure according to an embodiment of the present invention in order of steps. In FIGS. 3 to 9, the same components as those shown in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.
In the first example of the method for manufacturing a structure, the structure 10 shown in FIG. 1 in which the insulating film 16 is composed of an anodic oxide film of aluminum will be described as an example. An aluminum substrate is used to form an anodic oxide film of aluminum. Therefore, in the first example of the method for manufacturing a structure, first, as shown in FIG. 3, an aluminum substrate 30 is prepared.
The size and thickness of the aluminum substrate 30 are appropriately determined according to the thickness of the anodic oxide film 34 of the finally obtained structure 10 (see FIG. 9), that is, the thickness of the substrate 14, the apparatus to be processed, and the like. Is. The aluminum substrate 30 is, for example, a rectangular plate material. It should be noted that the present invention is not limited to the aluminum substrate, and a metal substrate capable of forming an insulating film can be used.

Next, the surface 30a (see FIG. 3) on one side of the aluminum substrate 30 is anodized. As a result, the surface 30a (see FIG. 3) on one side of the aluminum substrate 30 is anodized, and as shown in FIG. 4, an anodic oxide film having a plurality of pores 32 extending in the thickness direction Dt of the aluminum substrate 30. 34 is formed. A barrier layer 33 is present at the bottom of each pore 32. The above-mentioned anodizing step is called an anodizing treatment step.
The anodic oxide film 34 having a plurality of pores 32 has a barrier layer 33 at the bottom of each of the pores 32 as described above, but the barrier layer 33 shown in FIG. 4 is removed. As a result, an anodic oxide film 34 (see FIG. 5) having a plurality of pores 32 without the barrier layer 33 is obtained. The step of removing the barrier layer 33 is referred to as a barrier layer removing step.
In the barrier layer removing step, the barrier layer 33 of the anodic oxide film 34 is removed by using an alkaline aqueous solution containing ions of metal M1 having a higher hydrogen overvoltage than aluminum, and at the same time, the bottom 32c of the pores 32 (see FIG. 5). A metal layer 35a (see FIG. 5) made of a metal (metal M1) is formed on the surface 32d (see FIG. 5). As a result, the aluminum substrate 30 exposed to the pores 32 is covered with the metal layer 35a. As a result, when the pores 32 are filled with metal by plating, the plating is facilitated, the pores are suppressed from being sufficiently filled with metal, the pores are suppressed from being unfilled with metal, and the columns are columnar. Poor formation of the body 12 is suppressed.
The alkaline aqueous solution containing the ion of the metal M1 may further contain an aluminum ion-containing compound (sodium aluminate, aluminum hydroxide, aluminum oxide, etc.). The content of the aluminum ion-containing compound is preferably 0.1 to 20 g / L, more preferably 0.3 to 12 g / L, and even more preferably 0.5 to 6 g / L in terms of the amount of aluminum ions.

Next, the surface 34a of the anodized film 34 having a plurality of pores 32 extending in the thickness direction Dt is plated with the first metal, and the surface 34a is coated with the first metal. In this case, the metal layer 35a can be used as an electrode for electrolytic plating. The metal 35b is used as the first metal, and the plating proceeds starting from the metal layer 35a formed on the surface 32d (see FIG. 5) of the bottom 32c (see FIG. 5) of the pores 32. As a result, as shown in FIG. 6, the inside of the pores 32 of the anodic oxide film 34 is filled with the metal 35b, which is the first metal, and the surface 34a of the anodic oxide film 34 is further filled with the metal layer 20 by the metal 35b. Is formed. By filling the inside of the pores 32 with the metal 35b, the columnar body 12 having conductivity is formed. It should be noted that the metal layer 35a and the metal 35b are collectively filled with the metal 35.
The step of plating the inside of the pores 32 of the anodic oxide film 34 with the first metal from the surface 34a of the anodic oxide film 34 and coating the surface 34a of the anodic oxide film 34 with the first metal is the first coating. It is called a process. The surface 34a of the anodic oxide film 34 corresponds to one surface of the anodic oxide film 34.
Since the metal 35b is filled in the pores 32 of the anodic oxide film 34 in the first coating step, the first coating step is a metal filling step of filling the pores 32 of the anodic oxide film 34 with the metal 35b as described above. including. Electroplating is used in the first coating step, and the first coating step will be described in detail later. The thickness hm of the metal layer 20 (see FIG. 1) can be adjusted by adjusting the plating time of the first coating step and the like.
After the first coating step, the aluminum substrate 30 is removed as shown in FIG. The step of removing the aluminum substrate 30 is called a substrate removing step.

In the barrier layer removing step prior to the first coating step, the barrier layer 33 is not only removed but also finely divided by removing the barrier layer using an alkaline aqueous solution containing ions of metal M1 having a higher hydrogen overvoltage than aluminum. A metal layer 35a of the metal M1 that is less likely to generate hydrogen gas than aluminum is formed on the aluminum substrate 30 exposed at the bottom of the hole 32. As a result, the in-plane uniformity of the metal filling becomes good. It is considered that this is because the generation of hydrogen gas by the plating solution was suppressed and the metal filling by the electrolytic plating proceeded easily.
Further, in the barrier layer removing step, a holding step of holding the voltage of 95% or more and 105% or less of the voltage (holding voltage) selected from the range of less than 30% of the voltage in the anodizing treatment step for a total of 5 minutes or more is provided. It has been found that the uniformity of metal filling during the plating treatment is greatly improved by combining the application of an alkaline aqueous solution containing the ions of the metal M1. Therefore, it is preferable to have a holding step.
Although the detailed mechanism is unknown, in the barrier layer removal step, a layer of metal M1 is formed under the barrier layer by using an alkaline aqueous solution containing ions of metal M1, which damages the interface between the aluminum substrate and the anodic oxide film. It is considered that this is because the reception can be suppressed and the uniformity of dissolution of the barrier layer is improved.

In the barrier layer removing step, a metal layer 35a made of a metal (metal M1) was formed at the bottom of the pores 32, but the present invention is not limited to this, and only the barrier layer 33 is removed to form the pores 32. The aluminum substrate 30 is exposed on the bottom. The aluminum substrate 30 may be used as an electrode for electrolytic plating with the aluminum substrate 30 exposed.

After removing the aluminum substrate 30, the exposed back surface 34b of the anodic oxide film 34 is partially removed in the thickness direction, and as shown in FIG. 8, a plurality of pores of the anodic oxide film 34 are obtained by the first coating step. It is preferable that the metal 35 filled in 32, that is, a part of the columnar body 12, protrudes from the back surface 34b of the anodic oxide film 34. The back surface 34b of the anodic oxide film 34 corresponds to the other surface of the anodic oxide film 34.
The metal 35 (first metal) filled in the plurality of pores 32 of the anodic oxide film 34 by the first coating step is projected from the back surface 34b of the anodic oxide film 34. That is, projecting a part of the columnar body 12 from the back surface 34b of the anodic oxide film 34 is called a metal projecting step.

Next, the metal layer 22 is formed by coating the back surface 34b of the anodic oxide film 34 with the second metal from the back surface 34b of the anodic oxide film 34 using the second metal, and the structure shown in FIG. 9 is formed. 10 is obtained. In this case, as the second metal, the metal 35b can be used as in the first metal.
The step of coating the back surface 34b of the anodic oxide film 34 with the second metal from the back surface 34b of the anodic oxide film 34 with the second metal is referred to as the second coating step. As the second coating step, which will be described in detail later, plating can be used in the same manner as the first coating step. The second coating step is, for example, a plating step in which plating is performed from the back surface 34b of the anodic oxide film 34 with a second metal, and the back surface 34b of the anodic oxide film 34 is coated with the second metal. In this case, plating proceeds from the back surface 34b of the anodic oxide film 34 to form the metal layer 22.
The thickness hj of the metal layer 22 (see FIG. 1) can be adjusted by the film forming time in the second coating step, for example, the plating time.
The second coating step for forming the metal layer 22 is not limited to the plating method, and for example, the metal layer 22 may be formed by using a vapor deposition method or a sputtering method. However, from the viewpoint of the formation time of the metal layer 22, it is preferable to use a plating method having a higher film forming speed than the vapor deposition method and the sputtering method.

In the second coating step, for example, when the back surface 34b of the anodic oxide film 34 is coated with the second metal by plating, the columnar body 12 protruding from the back surface 34b of the anodic oxide film 34 makes it compared to a flat surface. The columnar body 12, which is a conductor, is easily plated, and the metal layer 22 is more easily formed by the plating. Further, due to the anchor effect of the columnar body 12, the bonding strength between the back surface 34b of the anodic oxide film 34 and the metal layer 22 is also higher than that without the columnar body 12. Even when the metal layer 22 is formed by a vapor deposition method other than the plating method and a sputtering method, if the columnar body 12 protrudes from the back surface 34b of the anodic oxide film 34 as in the plating method, the metal layer 22 is further formed. Further, the bonding strength between the back surface 34b of the anodic oxide film 34 and the metal layer 22 is increased. For this reason, it is preferable to have the above-mentioned metal projecting step between the first coating step and the second coating step.

The first metal described above constitutes the columnar body 12 and the metal layer 20, and the second metal constitutes the metal layer 22. For example, copper is used as the first metal and the second metal described above. The first metal and the second metal may be the same type of metal or different metals.
Further, the aluminum substrate 30 shown in FIG. 6 corresponds to the metal layer 22 of the structure 10 shown in FIG. Therefore, the configuration shown in FIG. 6 also corresponds to the structure 10. In the configuration of FIG. 6, the metal layer 20 and the metal layer 22 are made of different metals. For example, the metal layer 20 is made of copper and the metal layer 22 is made of aluminum.
Further, without performing the metal projecting step shown in FIG. 8 above, the back surface 34b of the anodized film 34 shown in FIG. 7 is plated with, for example, a second metal, and the back surface 34b is coated with the second metal. The metal layer 22 may be formed. In this case, plating proceeds from the back surface 34b of the anodic oxide film 34 to form the metal layer 22.
Further, in the first coating step, the columnar body 12 is formed to form the metal layer 20, and in the second coating step, the metal layer 22 is formed, but the present invention is not limited thereto. For example, the metal layer 20 may be formed in the first coating step, and the columnar body 12 and the metal layer 22 may be formed in the second coating step. In this case, the second coating step is preferably a plating step using a plating method because the pores are filled with metal to form the columnar body 12.

[Second example of manufacturing method of structure]
10 to 13 are schematic cross-sectional views showing a second example of the method for manufacturing a structure according to an embodiment of the present invention in order of steps. In FIGS. 10 to 13, the same components as those shown in FIGS. 3 to 9 are designated by the same reference numerals, and detailed description thereof will be omitted.
In the second example of the method for manufacturing the structure, the steps shown below are different from those in the first example of the method for manufacturing the structure.
In the second example, the aluminum substrate 30 is removed from the aluminum substrate 30 on which the anodic oxide film 34 shown in FIG. 4 is formed, and as shown in FIG. 10, the anodic oxide film in which a plurality of pores 32 are formed is formed. Get 34. Since the substrate removing step can be used for removing the aluminum substrate 30, detailed description thereof will be omitted.

Next, the pores 32 of the anodic oxide film 34 shown in FIG. 10 are enlarged and the barrier layer 33 is removed, and as shown in FIG. 11, the pores 32 penetrating the anodic oxide film 34 in the thickness direction Dt. To form a plurality.
For example, a pore wide treatment is used for expanding the diameter of the pore 32. The pore-wide treatment is a treatment in which the anodic oxide film is immersed in an acid aqueous solution or an alkaline aqueous solution to dissolve the anodic oxide film and expand the pore size of the pores 32. , An aqueous solution of an inorganic acid such as hydrochloric acid or a mixture thereof, or an aqueous solution of sodium hydroxide, potassium hydroxide, lithium hydroxide or the like can be used.

Next, the second metal is plated on the entire surface of the back surface 34b of the anodic oxide film 34 shown in FIG. 11, and the metal layer 36 is formed on the entire surface of the back surface 34b of the anodic oxide film 34 as shown in FIG. When forming the metal layer 36, the pores 32 of the anodic oxide film 34 are filled with metal to form a columnar body 12, and in the step of forming the metal layer 36 on the back surface 34b of the anodic oxide film 34, The pores 32 are not filled with metal.
The step of forming the metal layer 36 is the above-mentioned second coating step. The formation of the metal layer 36 by the second coating step is the same step as the second coating step of forming the metal layer 22 described above. The formation of the metal layer 36 is not limited to the plating method as in the formation of the metal layer 22, and the metal layer 36 may be formed by, for example, a vapor deposition method or a sputtering method. However, from the viewpoint of the formation time of the metal layer 36, it is preferable to use a plating method having a higher film forming speed than the vapor deposition method and the sputtering method.
The metal layer 36 is a member corresponding to the above-mentioned metal layer 22, and is preferably made of the same metal as the metal layer 22. The metal layer 36 can be made of the same metal as the metal layer 20 described above.
Here, as shown in FIG. 12, the metal layer 36 is provided on the back surface 34b side of the anodic oxide film 34. The metal layer 36 covers all the openings on the back surface 34b side of the anodic oxide film 34 of the pores 32. By providing the metal layer 36 on the back surface 34b of the anodic oxide film 34, when the pores 32 are filled with metal by metal plating, the plating is facilitated, the metal is not sufficiently filled, and the pores 32 are prevented from being sufficiently filled. Unfilling of metal to the metal is suppressed.

Next, as shown in FIG. 13, in a state where the metal layer 36 is formed on the anodic oxide film 34, a plurality of fine particles are formed inside the pores 32 of the anodic oxide film 34 by the plating method as in the first example. The holes 32 are filled with the metal 35b to form the columnar body 12, and the metal layer 20 is further formed on the surface 34a of the anodic oxide film 34. As a result, the structure 10 is formed. As shown in FIG. 13, the step of filling the pores 32 of the anodic oxide film 34 with the metal 35b to form the columnar body 12 and forming the metal layer 20 corresponds to the above-mentioned first coating step. ..

[Insulating film]
The insulating film is made of, for example, an inorganic material. For example, one having an electrical resistivity of about ^{10 14 Ω · cm can be used.}
In addition, "consisting of an inorganic material" is a regulation for distinguishing from a polymer material, and is not limited to an insulating base material composed only of an inorganic material, but an inorganic material as a main component (50% by mass). The above).

As described above, the insulating film is composed of, for example, an anodic oxide film. As the anodic oxide film, for example, an aluminum anodic oxide film is used because pores having a desired average diameter are formed and columnar bodies are easily formed. However, the anodic oxide film of aluminum is not limited, and an anodic oxide film of valve metal can be used. Therefore, valve metal is used as the metal substrate.
Here, examples of the valve metal include, for example, the above-mentioned aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony and the like. Of these, an aluminum anodic oxide film is preferable because it has good dimensional stability and is relatively inexpensive. Therefore, it is preferable to manufacture the structure using an aluminum substrate.

[Metal substrate]
The metal substrate is used for manufacturing a structure and is a substrate for forming an insulating film. As the metal substrate, for example, as described above, a metal substrate on which an anodic oxide film can be formed is used, and a metal substrate composed of the above-mentioned valve metal can be used. For example, as described above, an aluminum substrate is used as the metal substrate because it is easy to form an anodic oxide film as an insulating film.

[Aluminum substrate]
The aluminum substrate used to form the insulating film 16 is not particularly limited, and specific examples thereof include a pure aluminum plate; an alloy plate containing aluminum as a main component and containing a trace amount of a foreign element; low-purity aluminum (for example, for example). A substrate on which high-purity aluminum is vapor-deposited on (recycled material); a substrate on which the surface of silicon wafer, quartz, glass, etc. is coated with high-purity aluminum by a method such as vapor deposition or sputtering; a resin substrate on which aluminum is laminated; etc. ..

The surface of one side of the aluminum substrate on which the anodic oxide film is formed by the anodic oxidation treatment preferably has an aluminum purity of 99.5% by mass or more, more preferably 99.9% by mass or more, and 99. It is more preferably .99% by mass or more. When the aluminum purity is in the above range, the regularity of the micropore arrangement is sufficient.
The aluminum substrate is not particularly limited as long as it can form an anodic oxide film, and for example, JIS (Japanese Industrial Standards) 1050 material is used.

It is preferable that the surface of one side of the aluminum substrate to be anodized is previously heat-treated, degreased and mirror-finished.
Here, regarding the heat treatment, the degreasing treatment, and the mirror finish treatment, the same treatments as those described in paragraphs [0044] to [0054] of JP-A-2008-270158 can be applied.
The mirror finish treatment before the anodic oxidation treatment is, for example, electrolytic polishing, and for the electrolytic polishing, for example, an electrolytic polishing liquid containing phosphoric acid is used.

[Anodizing process]
For the anodizing treatment, a conventionally known method can be used, but a self-regular method or a constant voltage treatment is used from the viewpoint of increasing the regularity of the micropore arrangement and ensuring the anisotropic conductivity of the metal structure. Is preferable.
Here, regarding the self-regularization method and the constant voltage treatment of the anodizing treatment, the same treatments as those described in paragraphs [0056] to [0108] and [FIG. 3] of JP-A-2008-270158 are performed. Can be applied.

[Holding process]
The method for manufacturing the structure may include a holding step. The holding step is a voltage of 95% or more and 105% or less of the holding voltage selected from the range of 1 V or more and less than 30% of the voltage in the above-mentioned anodizing treatment step after the above-mentioned anodizing treatment step for a total of 5 minutes or more. This is the process of holding. In other words, the holding step is a total of 95% or more and 105% or less of the holding voltage selected from the range of 1 V or more and less than 30% of the voltage in the above-mentioned anodizing treatment step after the above-mentioned anodizing treatment step. This is a step of performing electrolytic treatment for 5 minutes or more.
Here, the "voltage in the anodizing treatment" is a voltage applied between the aluminum and the counter electrode, and for example, if the electrolysis time by the anodizing treatment is 30 minutes, the voltage maintained for 30 minutes. The average value.

From the viewpoint of controlling the thickness of the side wall of the anodizing film, that is, the thickness of the barrier layer to an appropriate thickness with respect to the depth of the pores, the voltage in the holding step is 5% or more and 25% or less of the voltage in the anodizing process. It is preferably present, and more preferably 5% or more and 20% or less.

Further, for the reason that the in-plane uniformity is further improved, the total holding time in the holding step is preferably 5 minutes or more and 20 minutes or less, more preferably 5 minutes or more and 15 minutes or less, and 5 minutes or more. It is more preferably 10 minutes or less.
The holding time in the holding step may be 5 minutes or more in total, but is preferably 5 minutes or more continuously.

Further, the voltage in the holding step may be set by continuously or stepwise reducing the voltage from the voltage in the anodic oxidation treatment step to the voltage in the holding step, but for the reason of further improving the in-plane uniformity, the anodic oxidation treatment is performed. It is preferable to set the voltage to 95% or more and 105% or less of the above-mentioned holding voltage within 1 second after the completion of the step.

The above-mentioned holding step can also be performed continuously with the above-mentioned anodizing treatment step, for example, by lowering the electrolytic potential at the end of the above-mentioned anodizing treatment step.
In the above-mentioned holding step, with respect to conditions other than the electrolytic potential, the same electrolytic solution and treatment conditions as those of the above-mentioned conventionally known anodizing treatment can be adopted.
In particular, when the holding step and the anodizing treatment step are continuously performed, it is preferable to perform the treatment using the same electrolytic solution.

The anodic oxide film having a plurality of micropores has a barrier layer (not shown) at the bottom of the micropores as described above. It has a barrier layer removing step for removing the barrier layer.

[Barrier layer removal process]
The barrier layer removing step is a step of removing the barrier layer of the anodic oxide film by using, for example, an alkaline aqueous solution containing ions of a metal M1 having a hydrogen overvoltage higher than that of aluminum.
By the barrier layer removing step described above, the barrier layer is removed, and a conductor layer made of the metal M1 is formed at the bottom of the micropores.
Here, the hydrogen overvoltage means the voltage required for hydrogen to be generated. For example, the hydrogen overvoltage of aluminum (Al) is -1.66V (Journal of the Chemical Society of Japan, 1982, (8), p1305-1313). ). An example of the metal M1 having a higher hydrogen overvoltage than that of aluminum and the value of the hydrogen overvoltage thereof are shown below.
<Metal M1 and hydrogen (1NH ₂ SO ₄ ) overvoltage>
-Platinum (Pt): 0.00V
-Gold (Au): 0.02V
-Silver (Ag): 0.08V
-Nickel (Ni): 0.21V
-Copper (Cu): 0.23V
-Tin (Sn): 0.53V
-Zinc (Zn): 0.70V

The pores 32 can also be formed by expanding the diameter of the micropores and removing the barrier layer. In this case, pore wide processing is used to increase the diameter of the micropores. The pore-wide treatment is a treatment in which the anodic oxide film is immersed in an acid aqueous solution or an alkaline aqueous solution to dissolve the anodic oxide film and expand the pore size of the micropores. An aqueous solution of an inorganic acid such as hydrochloric acid or a mixture thereof, or an aqueous solution of sodium hydroxide, potassium hydroxide, lithium hydroxide or the like can be used.
The barrier layer at the bottom of the micropores can also be removed by the pore wide treatment, and by using the sodium hydroxide aqueous solution in the pore wide treatment, the diameter of the micropores is expanded and the barrier layer is removed.

[First coating process (metal filling process)]
<Metal used in the first coating process>
In the first coating step, in order to form a columnar body, a metal to be filled as a conductor in the interior of the aforementioned pores 32, and the metal constituting the metal layer, the electrical resistivity of less 10 ³ Ω · cm It is preferably a material. Specific examples of the above-mentioned metals are preferably gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), and zinc (Zn). ..
As the conductor, copper (Cu), gold (Au), aluminum (Al), nickel (Ni) are preferable, and copper (Cu) and gold (Au) are preferable from the viewpoint of electrical conductivity and formation by a plating method. ) Is more preferable, and copper (Cu) is further preferable.

<Plating method>
As the plating method for filling the inside of the pores with metal, for example, an electrolytic plating method or an electroless plating method can be used.
Here, it is difficult to selectively deposit (grow) a metal in the pores with a high aspect ratio by a conventionally known electrolytic plating method used for coloring or the like. It is considered that this is because the precipitated metal is consumed in the pores and the plating does not grow even if electrolysis is performed for a certain period of time or longer.
Therefore, when metal is filled by the electrolytic plating method, it is necessary to allow a rest time during pulse electrolysis or constant potential electrolysis. The rest time is required to be 10 seconds or more, preferably 30 to 60 seconds.
It is also desirable to add ultrasonic waves to promote the agitation of the electrolyte.

Further, the electrolytic voltage is usually 20 V or less, preferably 10 V or less, but it is preferable to measure the precipitation potential of the target metal in the electrolytic solution to be used in advance and perform constant potential electrolysis within the potential of + 1 V. When performing constant potential electrolysis, it is desirable that cyclic voltammetry can be used in combination, and potentiometer devices such as Solartron, BAS, Hokuto Denko, and IVIUM can be used.

(Plating liquid)
As the plating solution, a conventionally known plating solution can be used.
Specifically, when precipitating copper, an aqueous solution of copper sulfate is generally used, but the concentration of copper sulfate is preferably 1 to 300 g / L, more preferably 100 to 200 g / L. preferable. Further, the precipitation can be promoted by adding hydrochloric acid to the electrolytic solution. In this case, the hydrochloric acid concentration is preferably 10 to 20 g / L.
When depositing gold, it is desirable to use a sulfuric acid solution of tetrachlorogold and perform plating by AC electrolysis.

The plating solution preferably contains a surfactant.
As the surfactant, known ones can be used. Sodium lauryl sulfate, which is conventionally known as a surfactant to be added to the plating solution, can be used as it is. Both ionic (cationic / anionic / bidirectional) and nonionic (nonionic) hydrophilic portions can be used, but the point of avoiding the generation of bubbles on the surface of the object to be plated. A cation beam activator is desirable. The concentration of the surfactant in the plating solution composition is preferably 1% by mass or less.
In the electroless plating method, it takes a long time to completely fill the pores having pores having a high aspect with metal, so it is desirable to fill the pores with metal by using the electroplating method.

[Substrate removal process]
The substrate removing step is a step of removing the above-mentioned aluminum substrate after the first coating step. The method for removing the aluminum substrate is not particularly limited, and for example, a method for removing by melting is preferable.

<Dissolution of aluminum substrate>
For the above-mentioned dissolution of the aluminum substrate, it is preferable to use a treatment liquid that is difficult to dissolve the anodic oxide film and easily dissolves aluminum.
Such a treatment liquid preferably has a dissolution rate in aluminum of 1 μm / min or more, more preferably 3 μm / min or more, and further preferably 5 μm / min or more. Similarly, the dissolution rate for the anodic oxide film is preferably 0.1 nm / min or less, more preferably 0.05 nm / min or less, and even more preferably 0.01 nm / min or less.
Specifically, it is preferably a treatment liquid containing at least one metal compound having a lower ionization tendency than aluminum and having a pH (hydrogen ion index) of 4 or less or 8 or more, and the pH is 3 or less or It is more preferably 9 or more, and further preferably 2 or less or 10 or more.

The treatment liquid for dissolving aluminum is based on an acid or alkaline aqueous solution, for example, manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum. , A gold compound (for example, platinum chloride acid), these fluorides, these chlorides and the like are preferably blended.
Of these, an acid aqueous solution base is preferable, and a chloride blend is preferable.
In particular, a treatment liquid obtained by blending a hydrochloric acid aqueous solution with mercury chloride (hydrochloric acid / mercury chloride) and a treatment liquid obtained by blending a hydrochloric acid aqueous solution with copper chloride (hydrochloric acid / copper chloride) are preferable from the viewpoint of treatment latitude.
The composition of the treatment liquid for dissolving aluminum is not particularly limited, and for example, a bromine / methanol mixture, a bromine / ethanol mixture, aqua regia, or the like can be used.

The acid or alkali concentration of the treatment liquid for dissolving aluminum is preferably 0.01 to 10 mol / L, more preferably 0.05 to 5 mol / L.
Further, the treatment temperature using the treatment liquid for dissolving aluminum is preferably −10 ° C. to 80 ° C., preferably 0 ° C. to 60 ° C.

Further, the above-mentioned melting of the aluminum substrate is performed by bringing the aluminum substrate after the above-mentioned plating step into contact with the above-mentioned treatment liquid. The contact method is not particularly limited, and examples thereof include a dipping method and a spraying method. Above all, the dipping method is preferable. The contact time at this time is preferably 10 seconds to 5 hours, more preferably 1 minute to 3 hours.

A support may be provided on the anodic oxide film 34, for example. The support preferably has the same outer shape as the anodic oxide film 34. By attaching a support, handleability is increased.

[Metal protrusion process]
For the partial removal of the anodic oxide film 34 described above, for example, an acid aqueous solution or an alkaline aqueous solution that does not dissolve the metal constituting the columnar body 12 but dissolves the anodic oxide film 34, that is, aluminum oxide (Al ₂ O _3). Is used. The anodic oxide film 34 is partially removed by contacting the above-mentioned acid aqueous solution or alkaline aqueous solution with the anodic oxide film 34 having pores 32 filled with metal. The method of bringing the above-mentioned acid aqueous solution or alkaline aqueous solution into contact with the anodic oxide film 34 is not particularly limited, and examples thereof include a dipping method and a spraying method. Of these, the dipping method is preferable.

When an aqueous acid solution is used, it is preferable to use an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid and hydrochloric acid, or a mixture thereof. Of these, an aqueous solution containing no chromic acid is preferable because it is excellent in safety. The concentration of the aqueous acid solution is preferably 1 to 10% by mass. The temperature of the aqueous acid solution is preferably 25 to 60 ° C.
When an alkaline aqueous solution is used, it is preferable to use at least one alkaline aqueous solution selected from the group consisting of sodium hydroxide, potassium hydroxide and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1 to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35 ° C.
Specifically, for example, a 50 g / L, 40 ° C. phosphoric acid aqueous solution, a 0.5 g / L, 30 ° C. sodium hydroxide aqueous solution, or a 0.5 g / L, 30 ° C. potassium hydroxide aqueous solution is preferably used. ..

The immersion time in the acid aqueous solution or the alkaline aqueous solution is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. Here, the soaking time means the total of each soaking time when the soaking treatment for a short time is repeated. A cleaning treatment may be performed between the immersion treatments.

Further, the metal 35, that is, the columnar body 12 is projected from the back surface 34b of the anodic oxide film 34, but the metal 35, that is, the columnar body 12 is an anode for the reason that the pressure bonding property with the metal layer 22 is good. It is preferable to project 10 nm to 1000 nm more than the back surface 34b of the oxide film 34, and more preferably 50 nm to 500 nm. That is, the amount of protrusion of the columnar body 12 from the back surface 34b of the protruding portion is preferably 10 nm to 1000 nm, more preferably 50 nm to 500 nm.
The height of the protruding part of the columnar body is the average value obtained by observing the cross section of the structure with a field emission scanning electron microscope at a magnification of 20,000 times and measuring the height of the protruding part of the columnar body at 10 points. ..

When strictly controlling the height of the protruding portion of the columnar body 12, after filling the inside of the pores 32 with metal, the anodic oxide film 34 and the end portion of the metal are processed so as to be in the same plane. , It is preferable to selectively remove the anodic oxide film.
Further, after the above-mentioned metal filling or after the metal projecting step, heat treatment can be performed for the purpose of reducing the strain in the columnar body 12 generated by the metal filling.
The heat treatment is preferably carried out in a reducing atmosphere from the viewpoint of suppressing the oxidation of the metal, specifically, the oxygen concentration is preferably 20 Pa or less, and more preferably carried out under vacuum. Here, the vacuum means a state of a space in which at least one of the gas density and the atmospheric pressure is lower than that of the atmosphere.
Further, it is preferable that the heat treatment is performed while applying stress to the anodic oxide film 34 for the purpose of straightening.

[Second coating step]
In the second coating step, as shown in FIG. 7, the anodic oxide film 34 is filled with the metal 35 to form the columnar body 12, and the metal layer 20 is formed, or the columnar body 12 shown in FIG. 8 is an anode. This is a step of coating the back surface 34b of the anodic oxide film 34 with the second metal by using the second metal in a state of protruding from the oxide film 34. The metal layer 22 is formed by the second coating step. Since the second coating step is the same step as the first coating step except that the pores of the anodic oxide film are not filled with metal, detailed description thereof will be omitted. Since the film formation time is fast in the second coating step as described above, it is preferable to use the plating method in the same manner as in the first coating step.
Further, the second coating step is also a step of forming a second metal on the entire surface of the back surface 34b of the anodic oxide film 34, for example, by a plating method, as shown in FIG. For example, the second metal is plated using an electroless plating method to form the metal layer 36.

<Pore wide processing>
The pore-wide treatment is a treatment in which the aluminum substrate is immersed in an acid aqueous solution or an alkaline aqueous solution to dissolve the anodic oxide film and expand the diameter of the pores 32. The barrier layer is removed by the pore wide treatment to penetrate the pores of the anodic oxide film 34.

When an aqueous acid solution is used for the pore wide treatment, it is preferable to use an aqueous solution of an inorganic acid such as sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid, or a mixture thereof. The concentration of the aqueous acid solution is preferably 1 to 10% by mass. The temperature of the aqueous acid solution is preferably 25 to 40 ° C.
When an alkaline aqueous solution is used for the pore wide treatment, it is preferable to use at least one alkaline aqueous solution selected from the group consisting of sodium hydroxide, potassium hydroxide and lithium hydroxide. The concentration of the alkaline aqueous solution is preferably 0.1 to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35 ° C.
Specifically, for example, a 50 g / L, 40 ° C. phosphoric acid aqueous solution, a 0.5 g / L, 30 ° C. sodium hydroxide aqueous solution, or a 0.5 g / L, 30 ° C. potassium hydroxide aqueous solution is preferably used. ..
The immersion time in the acid aqueous solution or the alkaline aqueous solution is preferably 8 to 60 minutes, more preferably 10 to 50 minutes, and even more preferably 15 to 30 minutes.

The present invention is basically configured as described above. Although the structure of the present invention and the method for manufacturing the structure have been described in detail above, the present invention is not limited to the above-described embodiment, and various improvements or changes have been made without departing from the gist of the present invention. Of course, it is also good.

10 Structure 12 Columnar body 14 Base 14a Front surface 14b Back surface 16 Insulation film 17 Pore 20 Metal layer 22 Metal layer 30 Aluminum substrate 30a Surface 32 Pore 33 Barrier layer 34 Anodized film 34a Surface 34b Back surface 35 Metal 35a Metal layer 35b Metal 36 Metal layer Dt Thickness direction d Average diameter hm, hj, ht Thickness H Height p Center-to-center distance

Claims (10)

1. Multiple columnar bodies composed of conductors,
   A substrate provided along the thickness direction of the plurality of columnar bodies in a state of being electrically insulated from each other,
   A structure having metal layers provided on both sides of the substrate in the thickness direction.
2. The structure according to claim 1, wherein the substrate has an electrically insulating insulating film, and a plurality of the columnar bodies are provided on the insulating film in a state of being electrically insulated from each other.
3. The structure according to claim 2, wherein the insulating film is composed of an anodic oxide film.
4. The structure according to any one of claims 1 to 3, wherein the metal layers provided on both sides of the substrate in the thickness direction are made of the same type of metal.
5. The structure according to any one of claims 1 to 4, wherein the plurality of columnar bodies and the metal layer are made of copper.
6. A first coating step of plating with a first metal from one surface of an anodic oxide film having a plurality of pores extending in the thickness direction and coating the one surface with the first metal.
   A method for producing a structure, comprising a second coating step of coating the other surface with the second metal from the other surface of the anodic oxide film using a second metal.
7. The second coating step is the plating step of plating the other surface of the anodic oxide film with the second metal and coating the other surface with the second metal, according to claim 6. How to manufacture the structure of.
8. Between the first coating step and the second coating step, the first metal filled in the plurality of pores of the anodic oxide film by the first coating step is applied to the other of the anodic oxide film. The method for manufacturing a structure according to claim 6 or 7, which comprises a metal projecting step of projecting from a surface.
9. The production of the structure according to any one of claims 6 to 8, wherein the first metal in the first coating step and the second metal in the second coating step are the same type of metal. Method.
10. The method for producing a structure according to any one of claims 6 to 9, wherein the first metal in the first coating step and the second metal in the second coating step are copper.

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