WO2021259085A1 - 基板、背光模组及显示装置 - Google Patents

基板、背光模组及显示装置 Download PDF

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Publication number
WO2021259085A1
WO2021259085A1 PCT/CN2021/099789 CN2021099789W WO2021259085A1 WO 2021259085 A1 WO2021259085 A1 WO 2021259085A1 CN 2021099789 W CN2021099789 W CN 2021099789W WO 2021259085 A1 WO2021259085 A1 WO 2021259085A1
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WO
WIPO (PCT)
Prior art keywords
metal
metal layer
layer
insulating layer
light
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Application number
PCT/CN2021/099789
Other languages
English (en)
French (fr)
Inventor
王珂
曹占锋
齐琪
曲燕
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/769,022 priority Critical patent/US20240105893A1/en
Publication of WO2021259085A1 publication Critical patent/WO2021259085A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present disclosure relates to the field of display technology, in particular to a substrate, a backlight module and a display device.
  • Mini/Micro LED substrates require metal traces to have low resistance, so copper metal is generally used as wiring material.
  • LED bonding in the light-emitting area and flexible printed circuit (FPC) bonding in the bonding area are usually required.
  • the mainstream LED bonding is to first coat the conductive adhesive on the LED window position of the substrate (that is, the exposed position of the LED PAD copper metal), and then bind the LED chip to the substrate by mass transfer, and finally use reflow soldering (230 -260°C curing) method to cure the conductive adhesive.
  • the conventional hot pressing method is used for FPC bonding, and the general temperature is 130°C-150°C.
  • the present disclosure provides a substrate, a backlight module and a display device.
  • a substrate is provided, the substrate is used for displaying or providing backlight, and the substrate includes: a binding area and a plurality of light-emitting areas;
  • the light-emitting area includes a first metal layer and a first conductive glue located on the first metal layer; the first conductive glue is a photocurable conductive glue; and
  • the binding area includes a second metal layer and a second conductive glue located on the second metal layer.
  • the light-curing conductive adhesive is ultraviolet light-curing conductive adhesive or laser-curing conductive adhesive.
  • the material of the ultraviolet light curing conductive adhesive includes ultraviolet light fixing adhesive and nano metal powder.
  • the material of the laser-cured conductive adhesive includes laser-cured adhesive and nano metal powder.
  • the first conductive glue is doped with conductive metal balls.
  • the particle size of the conductive metal ball ranges from 5 ⁇ m to 30 ⁇ m.
  • the conductive metal ball is a tin metal ball or a copper metal ball.
  • the tin metal ball and the copper metal ball are solid metal balls; or
  • the tin metal ball and the copper metal ball are metal balls with a core-shell structure formed by coating tin metal or copper metal on a plastic ball.
  • the second conductive adhesive is thermally cured conductive adhesive.
  • the first metal layer and the second metal layer are provided in the same layer.
  • the light-emitting area further includes a light-emitting structure, a first insulating layer, and a first connection hole, the first insulating layer is located between the light-emitting structure and the first metal layer, and the first connection hole Penetrating the first insulating layer, the first conductive glue is located in the first connection hole, and the light emitting structure is electrically connected to the first metal layer through the first conductive glue; and
  • the binding area further includes a circuit board, a second insulating layer, and a second connection hole, the second insulating layer is located between the circuit board and the second metal layer, and the second connection hole penetrates the The second insulating layer, the second conductive glue is located in the second connection hole, and the circuit board is electrically connected to the second metal layer through the second conductive glue.
  • the first insulating layer includes a first insulating sublayer and a first flat sublayer
  • the second insulating layer includes a second insulating sublayer and a second flat sublayer
  • the light emitting structure is a micro light emitting diode chip.
  • the light-emitting area further includes a third metal layer, a third insulating layer, and a third connection hole.
  • the third insulating layer is located between the third metal layer and the first metal layer.
  • the third connection hole penetrates the third insulating layer, and the third metal layer is electrically connected to the first metal layer through the third connection hole;
  • the bonding area further includes a fourth metal layer, a fourth insulating layer, and a fourth connection hole, the fourth insulating layer is located between the fourth metal layer and the second metal layer, and the fourth connection A hole penetrates the fourth insulating layer, and the fourth metal layer is electrically connected to the second metal layer through the fourth connection hole.
  • the third insulating layer includes a third insulating sublayer and a third flat sublayer
  • the fourth insulating layer includes a fourth insulating sublayer and a fourth flat sublayer.
  • the material of the first metal layer and the second metal layer is copper, aluminum, molybdenum or titanium.
  • a backlight module which includes the above-mentioned substrate.
  • a display device which includes the substrate as described above.
  • FIG. 1 is a schematic structural diagram of a substrate provided by an embodiment of the disclosure
  • FIG. 2 is a schematic structural diagram of another substrate provided by an embodiment of the disclosure.
  • FIG. 3 is a schematic structural diagram of still another substrate provided by an embodiment of the disclosure.
  • words such as “first”, “second”, “third”, and “fourth” are used to distinguish the same or similar items that have substantially the same function and effect, and are only used to clearly describe the implementation of the present disclosure. Examples of technical solutions cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • a plurality of means two or more; the orientation or positional relationship indicated by the term “ ⁇ ” etc. is based on the orientation or positional relationship shown in the drawings, It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure.
  • the embodiment of the present disclosure provides a substrate for displaying or providing backlight.
  • the substrate includes: a binding area OB and a plurality of light-emitting areas OA;
  • the light-emitting area OA includes a first metal layer 1 And the first conductive glue 2 located on the first metal layer 1;
  • the first conductive glue 2 is a light-curing conductive glue;
  • the binding area OB includes a second metal layer 3 and a second conductive glue 4 located on the second metal layer 3 .
  • the above-mentioned substrate can be selected for display or provide backlight according to actual conditions.
  • the above-mentioned substrate can be used as a display substrate to form a display panel; in this case, a plurality of light-emitting areas constitute a display area (Active Area, AA), and the display area refers to an area used for realizing display.
  • the above-mentioned substrate can be used as a backplane.
  • the light-emitting area may be any one of a red light-emitting area, a green light-emitting area, or a blue light-emitting area.
  • the substrate may include light-emitting areas of three light-emitting colors, red light-emitting area, green light-emitting area, or blue light-emitting area; of course, it may also include only one light-emitting color light-emitting area, For example: only a plurality of red light-emitting areas, or only a plurality of green light-emitting areas, or only a plurality of blue light-emitting areas. The details can be determined according to actual requirements.
  • the materials of the first metal layer and the second metal layer are not limited here.
  • the materials of the first metal layer and the second metal layer may be copper, aluminum, molybdenum, titanium, etc., considering that copper is used in practical applications. With lower resistance, both the first metal layer and the second metal layer are made of copper.
  • the materials of the first conductive adhesive and the second conductive adhesive are not limited.
  • the materials of the first conductive adhesive and the second conductive adhesive can be prepared by doping an adhesive with a conductive material; for example, the adhesive can be epoxy.
  • Resin, conductive material can be metal particles.
  • the above-mentioned light-curing conductive adhesive means: a conductive adhesive that can be cured by light irradiation.
  • the curing effect of the conductive adhesive is affected by factors such as the type of light, the intensity of the light, and the irradiation time.
  • the control method of the above-mentioned multiple light-emitting areas is not limited.
  • the partition display of the substrate (when used for display) or the light source provided by the partition (when used for providing backlight) can be realized through partition control.
  • Embodiments of the present disclosure provide a substrate, a backlight module, and a display device.
  • the substrate is used for displaying or providing backlight and includes: a binding area and a plurality of light-emitting areas; the light-emitting area includes a first metal layer and a first metal layer.
  • the first conductive adhesive is a photocurable conductive adhesive; the binding area includes a second metal layer and a second conductive adhesive located on the second metal layer.
  • the first conductive glue in the light-emitting area of the above-mentioned substrate is a photocurable conductive glue; in this way, during the manufacturing process of the substrate, light can be used to irradiate only the area where the first conductive glue is located, thereby curing the first conductive glue, and at the same time using a mask to block Binding area, so as to prevent the second metal layer in the binding area from being oxidized due to the influence of light; the substrate can avoid the problem of oxidation of the second metal layer in the binding area due to the curing of the first conductive adhesive in the light-emitting area, thereby ensuring
  • the normal progress of the follow-up process can improve production efficiency; at the same time, it can also increase product yield.
  • the light-curing conductive adhesive is ultraviolet light-curing conductive adhesive or laser-curing conductive adhesive.
  • the above-mentioned laser-cured conductive adhesive means: a conductive adhesive that is cured by using the heat generated by laser radiation.
  • the components of the above-mentioned UV-curable conductive adhesive and laser-cured conductive adhesive include UV-curable adhesives and nano metal powder; the components of the laser-cured conductive adhesive include laser-cured adhesives and nano metal powder.
  • the first conductive glue is doped with conductive metal balls.
  • the above-mentioned doping means doping a small amount of other elements or compounds to make the material have better performance.
  • the above-mentioned first conductive adhesive is doped with conductive metal balls, that is, a small amount of conductive metal balls are mixed into the first conductive adhesive, so that the first conductive adhesive has better conductivity.
  • the conductive metal ball may be a metal ball with a hollow structure or a metal ball with a solid structure.
  • the material of the aforementioned conductive metal ball is not limited here.
  • the particle size of the conductive metal ball ranges from 5 ⁇ m to 30 ⁇ m.
  • the specific particle size of the conductive metal ball within the foregoing particle size range is not limited here.
  • the particle size of the conductive metal ball may be 5 ⁇ m, 15 ⁇ m, or 30 ⁇ m.
  • the conductive metal ball is a tin metal ball or a copper metal ball.
  • the above-mentioned tin metal ball can be a solid tin (Sn) metal ball, or it can be a tin metal ball with a core-shell structure formed by coating tin metal on a plastic ball.
  • the above-mentioned copper metal ball may be a solid copper (Cu) metal ball, or may be a copper metal ball with a core-shell structure formed by coating copper metal on a plastic ball.
  • Cu solid copper
  • the second conductive adhesive is a thermally curable conductive adhesive.
  • the first metal layer and the second metal layer are provided in the same layer.
  • One patterning process refers to the process of forming the required layer structure after one exposure.
  • a patterning process includes masking, exposure, development, etching and stripping.
  • the light-emitting area OA further includes a light-emitting structure 5, a first insulating layer 8 and a first connection hole (not marked in FIG. 1); the first insulating layer 8 is located between the light-emitting structure 5 and the first metal. Between the layers 1; the first connection hole penetrates the first insulating layer 8; the first conductive glue 2 is located in the first connection hole; the light emitting structure 5 is electrically connected to the first metal layer 1 through the first conductive glue 2.
  • the binding area OB also includes a circuit board 9, a second insulating layer 12, and a second connection hole (not marked in FIG. 1); the second insulating layer 12 is located between the circuit board 9 and the second metal layer 3.
  • the second connecting hole penetrates the second insulating layer 12; the second conductive glue 4 is located in the second connecting hole; the circuit board 9 is electrically connected to the second metal layer 3 through the second conductive glue 4.
  • the above-mentioned first connection hole penetrates the first insulating layer, and the second connection hole penetrates the second insulating layer means: the first insulating layer at the location of the first connection hole has been removed, or the second connection hole at the location of the second connection hole has been removed.
  • the insulating layer has been removed.
  • the above-mentioned first insulating layer may include a first insulating sublayer 7 and a first flat sublayer 6 as shown in FIG. It can also play a flattening role.
  • the above-mentioned second insulating layer may include a second insulating sublayer 10 and a second flat sublayer 11 as shown in FIG. Role, it can also play a flattening role.
  • the light emitting structure is a micro light emitting diode chip.
  • micro light emitting diode chip may be a Mini LED chip or a Micro LED chip.
  • the shape of the micro light emitting diode chip may be a rectangle, and the light emitting color of the micro light emitting diode chip may be white.
  • the light-emitting area OA further includes a third metal layer 13, a third insulating layer 16, and a third connection hole (not marked in FIG. 1); the third insulating layer 16 is located on the third metal layer 13. And the first metal layer 1; the third connection hole penetrates the third insulating layer 16, and the third metal layer 13 is electrically connected to the first metal layer 1 through the third connection hole.
  • the bonding area OB further includes a fourth metal layer 20, a fourth insulating layer 19, and a fourth connection hole (not marked in FIG. 1); the fourth insulating layer 19 is located on the fourth metal layer 20 and the second Between the metal layers 3; the fourth connection hole penetrates the fourth insulating layer 19, and the fourth metal layer 20 is electrically connected to the second metal layer 3 through the fourth connection hole.
  • the above-mentioned third connecting hole penetrates the third insulating layer, and the fourth connecting hole penetrates the fourth insulating layer means that the third insulating layer at the position of the third connecting hole has been removed, or the fourth connecting hole is located at the fourth insulating layer.
  • the insulating layer has been removed.
  • the above-mentioned third insulating layer may include a third insulating sublayer 15 and a third flat sublayer 14 as shown in FIG. Role, it can also play a flattening role.
  • the above-mentioned fourth insulating layer 19 may include a fourth insulating sublayer 18 and a fourth flat sublayer 17 as shown in FIG.
  • the role of, can also play a flattening role.
  • the above-mentioned multiple light-emitting regions and binding portions are all located on the organic layer 21 as shown in FIG. 1, and the organic layer 21 is located on the substrate 22.
  • the organic layer is a flexible substrate, such as polyimide (PI); the substrate is a rigid substrate, and the substrate is finally peeled off.
  • the organic layer is an organic buffer layer, the substrate is a rigid base, and the substrate remains.
  • the embodiments of the present disclosure provide a backlight module, which includes the substrate as in the above embodiments.
  • the backlight module has the characteristics of low power consumption, long service life, and zonal control of the light source.
  • the backlight module can also include a diffuser, a driving circuit and other structures, which can be determined according to actual needs, and will not be repeated here.
  • the backlight module can be used in any display device or component that needs to provide backlight.
  • the backlight module can be a rigid backlight module or a flexible backlight module (that is, bendable, foldable); or other backlights Any of the modules.
  • the embodiment of the present disclosure provides a display device including the substrate as in the above embodiment.
  • the display device can be a rigid display device or a flexible display device (that is, bendable and foldable).
  • the display device can be any of Micro OLED micro display devices, Mini LED micro display devices or other micro display devices, as well as any products with display functions such as televisions, digital cameras, mobile phones, tablet computers, etc. including these micro display devices Or parts.
  • the embodiment of the present disclosure provides a method for manufacturing a substrate as in the above embodiment.
  • the manufacturing method of the substrate includes:
  • the material of the third metal layer and the fourth metal layer may be copper; the third metal layer and the fourth metal layer Can be collectively referred to as the first copper layer (Cu1).
  • a third insulating layer 16 is formed on the third metal layer 13, and a fourth insulating layer 19 is formed on the fourth metal layer 20.
  • the third insulating layer 16 may include a third insulating sublayer 15 and a third flat sublayer 14.
  • the fourth insulating layer 19 may include a fourth insulating sublayer 18 and a fourth flat sublayer 17.
  • the third insulating sublayer and the fourth insulating sublayer can be collectively referred to as the first protective layer (PVX1), and the third flat sublayer and the fourth flat sublayer can be collectively referred to as the first flat layer (OC1).
  • PVX1 first protective layer
  • OC1 first flat layer
  • a first metal layer 1 is formed on the third insulating layer 16 and a second metal layer 3 is formed on the fourth insulating layer 19; wherein, the first metal layer and the second metal layer can be Collectively referred to as the second copper layer (Cu2).
  • a first insulating layer 8 is formed on the first metal layer 1, and a second insulating layer 12 is formed on the second metal layer 3.
  • the first insulating layer 8 may include a first insulating sublayer 7 and a first flat sublayer 6.
  • the second insulating layer 12 may include a second insulating sublayer 10 and a second flat sublayer 11.
  • the first insulating sublayer and the second insulating sublayer can be collectively referred to as the second protective layer (PVX2), and the first flat sublayer and the second flat sublayer can be collectively referred to as the second flat layer (OC2).
  • PVX2 the second protective layer
  • OC2 the second flat layer
  • the production method is not limited.
  • a patterning process may be used to form the above-mentioned layer structure.
  • the patterning process is a process of forming a thin film and including at least one patterned layer.
  • the patterning process usually includes: coating photoresist (PR glue) on the film, exposing the photoresist using a mask, and then using a developer to wash away the photoresist that needs to be removed, and then etching The part of the film that is not covered by the photoresist is removed, and the remaining photoresist is finally stripped to form the required layer.
  • photoresist PR glue
  • 4 masks ie 4Mask process
  • the first copper layer (Cu1) is patterned
  • the first protective layer (PVX1) is patterned
  • the first flat layer ( OC1), the patterned second copper layer (Cu2), the patterned second protective layer (PVX2) and the second flat layer (OC2) each use one mask, a total of 4 masks.
  • the photo-curable conductive adhesive is UV-curable conductive adhesive and the photo-curable conductive adhesive is laser-cured conductive adhesive as examples to specifically describe the coating of the photo-curable conductive adhesive and subsequent manufacturing methods.
  • the light-curing conductive adhesive is an ultraviolet light-curing conductive adhesive
  • the manufacturing method of the substrate further includes:
  • UV Mask ultraviolet mask
  • the photo-curable conductive adhesive of the substrate is laser-cured conductive adhesive
  • the manufacturing method of the substrate further includes:
  • S1702 Place a laser mask 104 as shown in FIG. 3 on the substrate, and align the opening position of the laser mask 104 with the position of the laser curing conductive adhesive, and use the laser light source 103 to cure the laser
  • the conductive adhesive position is irradiated, and the laser curing conductive adhesive is cured.
  • the first conductive adhesive of different materials is selected, and ultraviolet light/laser is used to irradiate only the area where the first conductive adhesive is located, thereby curing the first conductive adhesive; at the same time, an ultraviolet mask/laser mask is used to shield and bind Zone, so as to prevent the second metal layer in the binding zone from being oxidized due to the influence of light.
  • the manufacturing method further includes:
  • the second conductive adhesive here is a thermally curable conductive adhesive, so that the second conductive adhesive can be cured by a subsequent hot pressing process.

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Abstract

基板、背光模组及显示装置，涉及显示技术领域。基板用于显示或提供背光，基板包括：绑定区(OB)和多个发光区(OA)；发光区(OA)包括第一金属层(1)和位于第一金属层(1)上的第一导电胶(2)；第一导电胶(2)为光固化导电胶；绑定区(OB)包括第二金属层(3)和位于第二金属层(3)上的第二导电胶(4)。

Description

基板、背光模组及显示装置
相关申请的交叉引用
本公开要求在2020年06月22日提交中国专利局、申请号为202021171850.5、名称为“一种基板、背光模组及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，具体涉及一种基板、背光模组及显示装置。
背景技术
微发光二极管(Mini/Micro LED)基板要求金属走线有较低的电阻，故一般多采用铜金属作为配线材料。在基板的制作过程中，通常需要进行发光区的LED绑定(Bonding)和绑定区的柔性电路板(Flexible Printed Circuit，FPC)绑定(Bonding)。目前主流的LED Bonding是先在基板的LED开窗位置(即LED PAD铜金属裸露位置)涂布导电胶，再用巨量转移的方式将LED芯片绑定在基板上，最后用回流焊(230-260℃固化)方式将导电胶固化。LED Bonding之后采用常规的热压方式进行FPC Bonding，一般温度为130℃-150℃。
概述
本公开提供了一种基板、背光模组及显示装置。
本公开的实施例采用如下技术方案：
一方面，提供一种基板，所述基板用于显示或提供背光，所述基板包括：绑定区和多个发光区；
所述发光区包括第一金属层和位于所述第一金属层上的第一导电胶；所述第一导电胶为光固化导电胶；并且
所述绑定区包括第二金属层和位于所述第二金属层上的第二导电胶。
可选地，所述光固化导电胶为紫外光固化导电胶或者激光固化导电胶。
可选地，所述紫外光固化导电胶的材料包括紫外光固定胶和纳米金属粉。
可选地，所述激光固化导电胶的材料包括激光固化胶和纳米金属粉。
可选地，所述第一导电胶掺杂有导电金属球。
可选地，所述导电金属球的粒径范围为5μm-30μm。
可选地，所述导电金属球为锡金属球或铜金属球。
可选地，所述锡金属球和所述铜金属球为实心的金属球；或者
所述锡金属球和所述铜金属球分别为塑料球体上涂覆锡金属或铜金属构成的具有核壳结构的金属球。
可选地，所述第二导电胶为热固化导电胶。
可选地，所述第一金属层和所述第二金属层同层设置。
可选地，所述发光区还包括发光结构、第一绝缘层和第一连接孔，所述第一绝缘层位于所述发光结构和所述第一金属层之间，所述第一连接孔贯穿所述第一绝缘层，所述第一导电胶位于所述第一连接孔内，所述发光结构通过所述第一导电胶与所述第一金属层电连接；并且
所述绑定区还包括电路板、第二绝缘层和第二连接孔，所述第二绝缘层位于所述电路板和所述第二金属层之间，所述第二连接孔贯穿所述第二绝缘层，所述第二导电胶位于所述第二连接孔内，所述电路板通过所述第二导电胶与所述第二金属层电连接。
可选地，所述第一绝缘层包括第一绝缘子层和第一平坦子层，所述第二绝缘层包括第二绝缘子层和第二平坦子层。
可选地，所述发光结构为微发光二极管芯片。
可选地，所述发光区还包括第三金属层、第三绝缘层和第三连接孔。所述第三绝缘层位于所述第三金属层和所述第一金属层之间。所述第三连接孔贯穿所述第三绝缘层，所述第三金属层通过所述第三连接孔和所述第一金属层电连接；并且
所述绑定区还包括第四金属层、第四绝缘层和第四连接孔，所述第四绝缘层位于所述第四金属层和所述第二金属层之间，所述第四连接孔贯穿所述第四绝缘层，所述第四金属层通过所述第四连接孔和所述第二金属层电连接。
可选地，所述第三绝缘层包括第三绝缘子层和第三平坦子层，所述第四绝缘层包括第四绝缘子层和第四平坦子层。
可选地，所述第一金属层和所述第二金属层的材料为铜、铝、钼或钛。
另一方面，提供一种背光模组，包括如上所述的基板。
再一方面，提供一种显示装置，包括如上所述的基板。
上述说明仅是本公开技术方案的概述，为了能够更清楚了解本公开的技术手段，而可依照说明书的内容予以实施，并且为了让本公开的上述和其它目的、特征和优点能够更明显易懂，以下特举本公开的具体实施方式。
附图简述
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的一种基板的结构示意图；
图2为本公开实施例提供的另一种基板的结构示意图；并且
图3为本公开实施例提供的再一种基板的结构示意图。
详细描述
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
在本公开的实施例中，采用“第一”、“第二”“第三”“第四”等字样对功能和作用基本相同的相同项或相似项进行区分，仅为了清楚描述本公开实施例的技术方案，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。
在本公开的实施例中，除非另有说明，“多个”的含义是两个或两个以上；术语“上”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
本公开的实施例提供了一种基板，该基板用于显示或提供背光，参考图1所示，该基板包括：绑定区OB和多个发光区OA；发光区OA包括第一金属层1和位于第一金属层1上的第一导电胶2；第一导电胶2为光固化导电胶； 绑定区OB包括第二金属层3和位于第二金属层3上的第二导电胶4。
上述基板可以根据实际情况，选择用于显示或提供背光。当用于显示时，上述基板可作为显示基板，以形成显示面板；此时多个发光区构成显示区(Active Area，AA)，显示区是指用于实现显示的区域。当用于提供背光时，上述基板可作为背板。
这里对于基板包括的多个发光区的发光颜色不做限定；上述发光区可以是红色发光区、绿色发光区或者蓝色发光区中的任一种。由于该基板同时包括多个发光区，则该基板可以同时包括红色发光区、绿色发光区或者蓝色发光区三种发光颜色的发光区；当然，也可以仅包括一种发光颜色的发光区，例如：仅包括多个红色发光区，或者仅包括多个绿色发光区，或者仅包括多个蓝色发光区。具体可以根据实际要求确定。
这里对于上述第一金属层和第二金属层的材料不做限定，示例地，该第一金属层和第二金属层的材料可以是铜、铝、钼、钛等，考虑到实际应用中铜具有较低的电阻，第一金属层和第二金属层均采用铜制作。
上述第一导电胶和第二导电胶的材料不做限定，示例地，第一导电胶和第二导电胶的材料可以采用胶黏剂掺杂导电材料制备；例如，胶黏剂可以是环氧树脂，导电材料可以是金属粒子。
上述光固化导电胶的含义是：经过光线照射可以固化的导电胶。导电胶的固化效果受光的种类，光的照射强度、照射时间等因素的影响。
上述多个发光区的控制方式不做限定，示例地，可以通过分区控制实现基板的分区显示(用于显示时)或者分区提供光源(用于提供背光时)。
本公开的实施例提供了一种基板、背光模组及显示装置，基板用于显示或提供背光，包括：绑定区和多个发光区；发光区包括第一金属层和位于第一金属层上的第一导电胶；第一导电胶为光固化导电胶；绑定区包括第二金属层和位于第二金属层上的第二导电胶。上述基板发光区中的第一导电胶为光固化导电胶；这样，在基板的制作过程中，可以采用光线仅照射第一导电胶所在区域，从而固化第一导电胶，同时采用掩膜板遮挡绑定区，从而避免绑定区的第二金属层受到光照影响出现氧化现象；该基板能够避免因固化发光区的第一导电胶导致绑定区的第二金属层发生氧化的问题，从而保证后续工序的正常进行，进而提高生产效率；同时还能提高产品良率。
可选地，光固化导电胶为紫外光固化导电胶或者激光固化导电胶。
上述激光固化导电胶的含义是：利用激光辐射产生的热量进行固化的导电胶。
这里对于上述紫外光固化导电胶和激光固化导电胶的成分均不做限定。示例地，紫外光固化导电胶的成分包括紫外光固化胶和纳米金属粉；激光固化导电胶的成分包括激光固化胶和纳米金属粉。
可选地，为了提高导电功能，第一导电胶掺杂有导电金属球。
上述掺杂的含义是：掺入少量其他元素或化合物以使材料具备更好的性能。上述第一导电胶掺杂有导电金属球，即在第一导电胶中掺入少量导电金属球，以使第一导电胶具备更好的导电性能。
这里对上述导电金属球的结构不做限定。示例地，导电金属球可以是空心结构的金属球或者实心结构的金属球。这里对上述导电金属球的材料不做限定。
可选地，导电金属球的粒径范围为5μm-30μm。
这里对上述粒径范围内的导电金属球的具体粒径不做限定，示例地，导电金属球的粒径可以是5μm、15μm或者30μm。
可选地，导电金属球为锡金属球或者铜金属球。
上述锡金属球可以是实心的锡(Sn)金属球，也可以是塑料球上涂覆锡金属构成的具有核壳结构的锡金属球。
上述铜金属球可以是实心的铜(Cu)金属球，也可以是塑料球上涂覆铜金属构成的具有核壳结构的铜金属球。
可选地，为了便于后续热压工艺对第二导电胶进行固化，第二导电胶为热固化导电胶。
可选地，第一金属层和第二金属层同层设置。
这里同层设置是指采用一次构图工艺制作。一次构图工艺是指经过一次曝光形成所需要的层结构工艺。一次构图工艺包括掩膜、曝光、显影、刻蚀和剥离等工艺。
可选地，参考图1所示，发光区OA还包括发光结构5、第一绝缘层8和第一连接孔(图1中未标记)；第一绝缘层8位于发光结构5和第一金属层1之间；第一连接孔贯穿第一绝缘层8；第一导电胶2位于第一连接孔内；发光 结构5通过第一导电胶2与第一金属层1电连接。
参考图1所示，绑定区OB还包括电路板9、第二绝缘层12和第二连接孔(图1中未标记)；第二绝缘层12位于电路板9和第二金属层3之间；第二连接孔贯穿第二绝缘层12；第二导电胶4位于第二连接孔内；电路板9通过第二导电胶4与第二金属层3电连接。
上述第一连接孔贯穿第一绝缘层，第二连接孔贯穿第二绝缘层的含义分别是：第一连接孔所在位置的第一绝缘层已被去除，或者第二连接孔所在位置的第二绝缘层已被去除。
上述第一绝缘层可以包括如图1所示的第一绝缘子层7和第一平坦子层6，其中第一绝缘子层7起到绝缘的作用，第一平坦子层6既可以起到绝缘的作用，又可以起到平坦化的作用。
上述第二绝缘层可以包括如图1所示的第二绝缘子层10和第二平坦子层11，其中第二绝缘子层10起到绝缘的作用，第二平坦子层11既可以起到绝缘的作用，又可以起到平坦化的作用。
可选地，发光结构为微发光二极管芯片。
这里对上述微发光二极管芯片的种类不做限定，示例地，微发光二极管芯片可以是Mini LED芯片或者Micro LED芯片。
这里对上述微发光二极管芯片的形状和发光颜色均不作限定。示例地，上述微发光二极管芯片的形状可以是矩形，上述微发光二极管芯片的发光颜色可以是白色。
可选地，参考图1所示，发光区OA还包括第三金属层13、第三绝缘层16和第三连接孔(图1中未标记)；第三绝缘层16位于第三金属层13和第一金属层1之间；第三连接孔贯穿第三绝缘层16，第三金属层13通过第三连接孔和第一金属层1电连接。
参考图1所示，绑定区OB还包括第四金属层20、第四绝缘层19和第四连接孔(图1中未标记)；第四绝缘层19位于第四金属层20和第二金属层3之间；第四连接孔贯穿第四绝缘层19，第四金属层20通过第四连接孔和第二金属层3电连接。
上述第三连接孔贯穿第三绝缘层，第四连接孔贯穿第四绝缘层的含义分别是：第三连接孔所在位置的第三绝缘层已被去除，或者第四连接孔所在位 置的第四绝缘层已被去除。
上述第三绝缘层可以包括如图1所示的第三绝缘子层15和第三平坦子层14，其中第三绝缘子层15起到绝缘的作用，第三平坦子层14既可以起到绝缘的作用，又可以起到平坦化的作用。
上述第四绝缘层19可以包括如图1所示的第四绝缘子层18和第四平坦子层17，其中第四绝缘子层18起到绝缘的作用，第四平坦子层17既可以起到绝缘的作用，又可以起到平坦化的作用。
需要说明的是，上述多个发光区和绑定部均位于如图1所示的有机层21上，有机层21位于衬底22上。当上述基板是柔性基板时，有机层为柔性基底，例如：聚酰亚胺(PI)；衬底为刚性基底，衬底最终被剥离。当上述基板是刚性基板时，该有机层为有机缓冲层，衬底为刚性基底，该衬底保留。
本公开实施例提供了一种背光模组，包括如上文实施例中的基板。该背光模组具有功耗低、使用寿命长、光源可分区控制的特点。根据现有技术可知，该背光模组还可以包括扩散片、驱动电路等结构，具体可以根据实际需要确定，这里不再赘述。
该背光模组可用于需要提供背光的任何显示装置或者部件中，该背光模组可以是刚性的背光模组，也可以是柔性的背光模组(即可弯曲、可折叠)；或者是其他背光模组中的任一种。
本实施例中涉及的基板的结构，可以参考上文实施例，这里不再赘述。
本公开实施例提供了一种显示装置，包括如上文实施例中的基板。
该显示装置可以是刚性的显示装置，也可以是柔性的显示装置(即可弯曲、可折叠)。该显示装置可以是Micro OLED微显示装置、Mini LED微显示装置或者其他微显示装置中的任一种，以及包括这些微显示装置的电视、数码相机、手机、平板电脑等任何具有显示功能的产品或者部件。
本实施例中涉及的基板的结构，可以参考上文实施例，这里不再赘述。
本公开实施例提供如上文实施例的基板的制作方法。该基板的制作方法包括：
S10、在衬底之上形成有机层。
S11、在有机层之上形成如图2所示的第三金属层13和第四金属层20，第三金属层和第四金属层的材料可以是铜；第三金属层和第四金属层可统称 为第一铜层(Cu1)。
S12、参考图2和图3所示，在第三金属层13之上形成第三绝缘层16、在第四金属层20之上形成第四绝缘层19。第三绝缘层16可以包括第三绝缘子层15和第三平坦子层14。第四绝缘层19可以包括第四绝缘子层18和第四平坦子层17。
其中，第三绝缘子层和第四绝缘子层可统称为第一保护层(PVX1)，第三平坦子层和第四平坦子层可统称为第一平坦层(OC1)。
S13、参考图2和图3所示，在第三绝缘层16上形成第一金属层1、在第四绝缘层19形成第二金属层3；其中，第一金属层和第二金属层可统称为第二铜层(Cu2)。
S14、参考图2和图3所示，在第一金属层1上形成第一绝缘层8，在第二金属层3上形成第二绝缘层12。其中，第一绝缘层8可以包括第一绝缘子层7和第一平坦子层6。第二绝缘层12可以包括第二绝缘子层10和第二平坦子层11。
其中，第一绝缘子层和第二绝缘子层可统称为第二保护层(PVX2)，第一平坦子层和第二平坦子层可统称为第二平坦层(OC2)。
这里对于第一铜层(Cu1)、第一保护层(PVX1)、第一平坦层(OC1)、第二铜层(Cu2)、第二保护层(PVX2)、第二平坦层(OC2)的制作方法不做限定。示例地，可以采用构图工艺形成上述层结构。构图工艺是形成薄膜且包含至少一个图案层的工艺。构图工艺通常包含：在薄膜上涂覆光刻胶(PR胶)，利用掩膜板(mask)对光刻胶进行曝光，再利用显影液将需去除的光刻胶冲蚀掉，再刻蚀掉未覆盖光刻胶的薄膜部分，最后将剩下的光刻胶剥离，从而形成所需要的图层。
需要说明的是，上述制作方法中使用了4道掩膜板(即4Mask工艺)，具体的，图案化第一铜层(Cu1)、图案化第一保护层(PVX1)和第一平坦层(OC1)、图案化第二铜层(Cu2)、图案化第二保护层(PVX2)和第二平坦层(OC2)分别使用一道Mask，共计4道Mask。
下面分别以光固化导电胶为紫外光固化导电胶、光固化导电胶为激光固化导电胶为例具体说明涂布光固化导电胶及后续的制作方法。
第一种，光固化导电胶为紫外光固化导电胶，该基板的制作方法还包括：
S170、在如图2所示的第一绝缘层8中的第一连接孔内，涂布紫外光固化导电胶。
S171、用巨量转移的方式将微发光二极管芯片(Mini/Micro LED芯片)放置在紫外光固化导电胶上。
S172、将如图2所示的紫外掩膜板(UV Mask)101置于基板之上，并使紫外掩膜板101的开口位置与紫外光固化导电胶位置对准，通过紫外光源100对紫外光固化导电胶位置进行照射，紫外光固化导电胶固化。
这里对上述光源照射紫外光固化导电胶的时间不做限定，具体根据实际情况而定。
S173、移除紫外掩膜板101。
第二种，基板的光固化导电胶为激光固化导电胶，该基板的制作方法还包括：
S1700、用丝网印刷工艺将激光固化导电胶Sn膏或者Cu膏涂布在在如图2所示的第一绝缘层8中的第一连接孔内。
S1701、用巨量转移的方式将微发光二极管芯片(Mini/Micro LED芯片)放置在激光固化导电胶上。
S1702、将如图3所示的激光掩膜板(Laser Mask)104置于基板之上，并使激光掩膜板104的开口位置与激光固化导电胶位置对准，通过激光光源103对激光固化导电胶位置进行照射，激光固化导电胶固化。
S1703、移除激光掩膜板104。
上述两种制作方法中选用不同材料的第一导电胶，采用紫外光/激光仅照射第一导电胶所在区域，从而固化第一导电胶；同时采用紫外掩膜板/激光掩膜板遮挡绑定区，从而避免绑定区的第二金属层受到光照影响出现氧化现象。
在完成上述光固化导电胶的固化之后，还需要进行绑定区的制作，该制作方法还包括：
S18、在如图2所示的第二绝缘层12中的第二连接孔内，涂布导电胶4。
S19、将如图2所示的电路板9放置于第二导电胶4上。
这里的第二导电胶选用热固化导电胶，以便于后续热压工艺对第二导电胶进行固化。
S20、通过热压工艺固化第二导电胶，并同时将电路板压合在基板的绑定 区。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以权利要求的保护范围为准。

Claims (18)

  1. 一种基板，其中，所述基板用于显示或提供背光，所述基板包括：绑定区和多个发光区；
    所述发光区包括第一金属层和位于所述第一金属层上的第一导电胶，所述第一导电胶为光固化导电胶；并且
    所述绑定区包括第二金属层和位于所述第二金属层上的第二导电胶。
  2. 根据权利要求1所述的基板，其中，所述光固化导电胶为紫外光固化导电胶或者激光固化导电胶。
  3. 根据权利要求2所述的基板，其中，所述紫外光固化导电胶的材料包括紫外光固定胶和纳米金属粉。
  4. 根据权利要求2所述的基板，其中，所述激光固化导电胶的材料包括激光固化胶和纳米金属粉。
  5. 根据权利要求1所述的基板，其中，所述第一导电胶掺杂有导电金属球。
  6. 根据权利要求5所述的基板，其中，所述导电金属球的粒径范围为5μm-30μm。
  7. 根据权利要求5所述的基板，其中，所述导电金属球为锡金属球或铜金属球。
  8. 根据权利要求7所述的基板，其中，所述锡金属球和所述铜金属球为实心的金属球；或者
    所述锡金属球和所述铜金属球分别为塑料球体上涂覆锡金属或铜金属构成的具有核壳结构的金属球。
  9. 根据权利要求1所述的基板，其中，所述第二导电胶为热固化导电胶。
  10. 根据权利要求1所述的基板，其中，所述第一金属层和所述第二金属层同层设置。
  11. 根据权利要求1所述的基板，其中，
    所述发光区还包括发光结构、第一绝缘层和第一连接孔，所述第一绝缘层位于所述发光结构和所述第一金属层之间，所述第一连接孔贯穿所述第一绝缘层，所述第一导电胶位于所述第一连接孔内，所述发光结构通过所述第一导电胶与所述第一金属层电连接；并且
    所述绑定区还包括电路板、第二绝缘层和第二连接孔，所述第二绝缘层位于所述电路板和所述第二金属层之间，所述第二连接孔贯穿所述第二绝缘层，所述第二导电胶位于所述第二连接孔内，所述电路板通过所述第二导电胶与所述第二金属层电连接。
  12. 根据权利要求11所述的基板，其中，所述第一绝缘层包括第一绝缘子层和第一平坦子层，所述第二绝缘层包括第二绝缘子层和第二平坦子层。
  13. 根据权利要求11所述的基板，其中，所述发光结构为微发光二极管芯片。
  14. 根据权利要求13所述的基板，其中，
    所述发光区还包括第三金属层、第三绝缘层和第三连接孔，所述第三绝缘层位于所述第三金属层和所述第一金属层之间，所述第三连接孔贯穿所述第三绝缘层，所述第三金属层通过所述第三连接孔和所述第一金属层电连接；并且
    所述绑定区还包括第四金属层、第四绝缘层和第四连接孔，所述第四绝缘层位于所述第四金属层和所述第二金属层之间，所述第四连接孔贯穿所述第四绝缘层，所述第四金属层通过所述第四连接孔和所述第二金属层电连接。
  15. 根据权利要求14所述的基板，其中，所述第三绝缘层包括第三绝缘子层和第三平坦子层，所述第四绝缘层包括第四绝缘子层和第四平坦子层。
  16. 根据权利要求1所述的基板，其中，所述第一金属层和所述第二金属层的材料为铜、铝、钼或钛。
  17. 一种背光模组，其中，所述背光模组包括如权利要求1-16任一项所述的基板。
  18. 一种显示装置，其中，所述显示装置包括如权利要求1-16任一项所述的基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114863826A (zh) * 2022-04-12 2022-08-05 武汉华星光电半导体显示技术有限公司 显示屏及其制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN212113055U (zh) * 2020-06-22 2020-12-08 京东方科技集团股份有限公司 一种基板、背光模组及显示装置
CN114871081A (zh) * 2022-06-02 2022-08-09 福耀玻璃工业集团股份有限公司 导电胶层的制备方法、调光组件的制备方法和调光玻璃的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731702A (zh) * 2017-11-01 2018-02-23 昆山龙腾光电有限公司 模组绑定方法
CN109494292A (zh) * 2018-10-30 2019-03-19 青岛海信电器股份有限公司 一种微型发光二极管灯板、其制作方法及显示装置
CN109658831A (zh) * 2018-12-20 2019-04-19 厦门天马微电子有限公司 一种显示面板及显示装置
CN110634840A (zh) * 2019-09-24 2019-12-31 京东方科技集团股份有限公司 检测基板及其制备方法、检测装置和检测方法
US20200075816A1 (en) * 2018-08-30 2020-03-05 Oregon State University Micro-led apparatus with enhanced illumination, and method for forming such
CN212113055U (zh) * 2020-06-22 2020-12-08 京东方科技集团股份有限公司 一种基板、背光模组及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731702A (zh) * 2017-11-01 2018-02-23 昆山龙腾光电有限公司 模组绑定方法
US20200075816A1 (en) * 2018-08-30 2020-03-05 Oregon State University Micro-led apparatus with enhanced illumination, and method for forming such
CN109494292A (zh) * 2018-10-30 2019-03-19 青岛海信电器股份有限公司 一种微型发光二极管灯板、其制作方法及显示装置
CN109658831A (zh) * 2018-12-20 2019-04-19 厦门天马微电子有限公司 一种显示面板及显示装置
CN110634840A (zh) * 2019-09-24 2019-12-31 京东方科技集团股份有限公司 检测基板及其制备方法、检测装置和检测方法
CN212113055U (zh) * 2020-06-22 2020-12-08 京东方科技集团股份有限公司 一种基板、背光模组及显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114863826A (zh) * 2022-04-12 2022-08-05 武汉华星光电半导体显示技术有限公司 显示屏及其制作方法

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