WO2021259085A1 - 基板、背光模组及显示装置 - Google Patents
基板、背光模组及显示装置 Download PDFInfo
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- WO2021259085A1 WO2021259085A1 PCT/CN2021/099789 CN2021099789W WO2021259085A1 WO 2021259085 A1 WO2021259085 A1 WO 2021259085A1 CN 2021099789 W CN2021099789 W CN 2021099789W WO 2021259085 A1 WO2021259085 A1 WO 2021259085A1
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- Prior art keywords
- metal
- metal layer
- layer
- insulating layer
- light
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 153
- 239000002184 metal Substances 0.000 claims abstract description 153
- 239000000853 adhesive Substances 0.000 claims abstract description 81
- 230000001070 adhesive effect Effects 0.000 claims abstract description 81
- 239000003292 glue Substances 0.000 claims description 35
- 239000010949 copper Substances 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 239000011258 core-shell material Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 143
- 238000001723 curing Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000007731 hot pressing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Definitions
- the present disclosure relates to the field of display technology, in particular to a substrate, a backlight module and a display device.
- Mini/Micro LED substrates require metal traces to have low resistance, so copper metal is generally used as wiring material.
- LED bonding in the light-emitting area and flexible printed circuit (FPC) bonding in the bonding area are usually required.
- the mainstream LED bonding is to first coat the conductive adhesive on the LED window position of the substrate (that is, the exposed position of the LED PAD copper metal), and then bind the LED chip to the substrate by mass transfer, and finally use reflow soldering (230 -260°C curing) method to cure the conductive adhesive.
- the conventional hot pressing method is used for FPC bonding, and the general temperature is 130°C-150°C.
- the present disclosure provides a substrate, a backlight module and a display device.
- a substrate is provided, the substrate is used for displaying or providing backlight, and the substrate includes: a binding area and a plurality of light-emitting areas;
- the light-emitting area includes a first metal layer and a first conductive glue located on the first metal layer; the first conductive glue is a photocurable conductive glue; and
- the binding area includes a second metal layer and a second conductive glue located on the second metal layer.
- the light-curing conductive adhesive is ultraviolet light-curing conductive adhesive or laser-curing conductive adhesive.
- the material of the ultraviolet light curing conductive adhesive includes ultraviolet light fixing adhesive and nano metal powder.
- the material of the laser-cured conductive adhesive includes laser-cured adhesive and nano metal powder.
- the first conductive glue is doped with conductive metal balls.
- the particle size of the conductive metal ball ranges from 5 ⁇ m to 30 ⁇ m.
- the conductive metal ball is a tin metal ball or a copper metal ball.
- the tin metal ball and the copper metal ball are solid metal balls; or
- the tin metal ball and the copper metal ball are metal balls with a core-shell structure formed by coating tin metal or copper metal on a plastic ball.
- the second conductive adhesive is thermally cured conductive adhesive.
- the first metal layer and the second metal layer are provided in the same layer.
- the light-emitting area further includes a light-emitting structure, a first insulating layer, and a first connection hole, the first insulating layer is located between the light-emitting structure and the first metal layer, and the first connection hole Penetrating the first insulating layer, the first conductive glue is located in the first connection hole, and the light emitting structure is electrically connected to the first metal layer through the first conductive glue; and
- the binding area further includes a circuit board, a second insulating layer, and a second connection hole, the second insulating layer is located between the circuit board and the second metal layer, and the second connection hole penetrates the The second insulating layer, the second conductive glue is located in the second connection hole, and the circuit board is electrically connected to the second metal layer through the second conductive glue.
- the first insulating layer includes a first insulating sublayer and a first flat sublayer
- the second insulating layer includes a second insulating sublayer and a second flat sublayer
- the light emitting structure is a micro light emitting diode chip.
- the light-emitting area further includes a third metal layer, a third insulating layer, and a third connection hole.
- the third insulating layer is located between the third metal layer and the first metal layer.
- the third connection hole penetrates the third insulating layer, and the third metal layer is electrically connected to the first metal layer through the third connection hole;
- the bonding area further includes a fourth metal layer, a fourth insulating layer, and a fourth connection hole, the fourth insulating layer is located between the fourth metal layer and the second metal layer, and the fourth connection A hole penetrates the fourth insulating layer, and the fourth metal layer is electrically connected to the second metal layer through the fourth connection hole.
- the third insulating layer includes a third insulating sublayer and a third flat sublayer
- the fourth insulating layer includes a fourth insulating sublayer and a fourth flat sublayer.
- the material of the first metal layer and the second metal layer is copper, aluminum, molybdenum or titanium.
- a backlight module which includes the above-mentioned substrate.
- a display device which includes the substrate as described above.
- FIG. 1 is a schematic structural diagram of a substrate provided by an embodiment of the disclosure
- FIG. 2 is a schematic structural diagram of another substrate provided by an embodiment of the disclosure.
- FIG. 3 is a schematic structural diagram of still another substrate provided by an embodiment of the disclosure.
- words such as “first”, “second”, “third”, and “fourth” are used to distinguish the same or similar items that have substantially the same function and effect, and are only used to clearly describe the implementation of the present disclosure. Examples of technical solutions cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
- a plurality of means two or more; the orientation or positional relationship indicated by the term “ ⁇ ” etc. is based on the orientation or positional relationship shown in the drawings, It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure.
- the embodiment of the present disclosure provides a substrate for displaying or providing backlight.
- the substrate includes: a binding area OB and a plurality of light-emitting areas OA;
- the light-emitting area OA includes a first metal layer 1 And the first conductive glue 2 located on the first metal layer 1;
- the first conductive glue 2 is a light-curing conductive glue;
- the binding area OB includes a second metal layer 3 and a second conductive glue 4 located on the second metal layer 3 .
- the above-mentioned substrate can be selected for display or provide backlight according to actual conditions.
- the above-mentioned substrate can be used as a display substrate to form a display panel; in this case, a plurality of light-emitting areas constitute a display area (Active Area, AA), and the display area refers to an area used for realizing display.
- the above-mentioned substrate can be used as a backplane.
- the light-emitting area may be any one of a red light-emitting area, a green light-emitting area, or a blue light-emitting area.
- the substrate may include light-emitting areas of three light-emitting colors, red light-emitting area, green light-emitting area, or blue light-emitting area; of course, it may also include only one light-emitting color light-emitting area, For example: only a plurality of red light-emitting areas, or only a plurality of green light-emitting areas, or only a plurality of blue light-emitting areas. The details can be determined according to actual requirements.
- the materials of the first metal layer and the second metal layer are not limited here.
- the materials of the first metal layer and the second metal layer may be copper, aluminum, molybdenum, titanium, etc., considering that copper is used in practical applications. With lower resistance, both the first metal layer and the second metal layer are made of copper.
- the materials of the first conductive adhesive and the second conductive adhesive are not limited.
- the materials of the first conductive adhesive and the second conductive adhesive can be prepared by doping an adhesive with a conductive material; for example, the adhesive can be epoxy.
- Resin, conductive material can be metal particles.
- the above-mentioned light-curing conductive adhesive means: a conductive adhesive that can be cured by light irradiation.
- the curing effect of the conductive adhesive is affected by factors such as the type of light, the intensity of the light, and the irradiation time.
- the control method of the above-mentioned multiple light-emitting areas is not limited.
- the partition display of the substrate (when used for display) or the light source provided by the partition (when used for providing backlight) can be realized through partition control.
- Embodiments of the present disclosure provide a substrate, a backlight module, and a display device.
- the substrate is used for displaying or providing backlight and includes: a binding area and a plurality of light-emitting areas; the light-emitting area includes a first metal layer and a first metal layer.
- the first conductive adhesive is a photocurable conductive adhesive; the binding area includes a second metal layer and a second conductive adhesive located on the second metal layer.
- the first conductive glue in the light-emitting area of the above-mentioned substrate is a photocurable conductive glue; in this way, during the manufacturing process of the substrate, light can be used to irradiate only the area where the first conductive glue is located, thereby curing the first conductive glue, and at the same time using a mask to block Binding area, so as to prevent the second metal layer in the binding area from being oxidized due to the influence of light; the substrate can avoid the problem of oxidation of the second metal layer in the binding area due to the curing of the first conductive adhesive in the light-emitting area, thereby ensuring
- the normal progress of the follow-up process can improve production efficiency; at the same time, it can also increase product yield.
- the light-curing conductive adhesive is ultraviolet light-curing conductive adhesive or laser-curing conductive adhesive.
- the above-mentioned laser-cured conductive adhesive means: a conductive adhesive that is cured by using the heat generated by laser radiation.
- the components of the above-mentioned UV-curable conductive adhesive and laser-cured conductive adhesive include UV-curable adhesives and nano metal powder; the components of the laser-cured conductive adhesive include laser-cured adhesives and nano metal powder.
- the first conductive glue is doped with conductive metal balls.
- the above-mentioned doping means doping a small amount of other elements or compounds to make the material have better performance.
- the above-mentioned first conductive adhesive is doped with conductive metal balls, that is, a small amount of conductive metal balls are mixed into the first conductive adhesive, so that the first conductive adhesive has better conductivity.
- the conductive metal ball may be a metal ball with a hollow structure or a metal ball with a solid structure.
- the material of the aforementioned conductive metal ball is not limited here.
- the particle size of the conductive metal ball ranges from 5 ⁇ m to 30 ⁇ m.
- the specific particle size of the conductive metal ball within the foregoing particle size range is not limited here.
- the particle size of the conductive metal ball may be 5 ⁇ m, 15 ⁇ m, or 30 ⁇ m.
- the conductive metal ball is a tin metal ball or a copper metal ball.
- the above-mentioned tin metal ball can be a solid tin (Sn) metal ball, or it can be a tin metal ball with a core-shell structure formed by coating tin metal on a plastic ball.
- the above-mentioned copper metal ball may be a solid copper (Cu) metal ball, or may be a copper metal ball with a core-shell structure formed by coating copper metal on a plastic ball.
- Cu solid copper
- the second conductive adhesive is a thermally curable conductive adhesive.
- the first metal layer and the second metal layer are provided in the same layer.
- One patterning process refers to the process of forming the required layer structure after one exposure.
- a patterning process includes masking, exposure, development, etching and stripping.
- the light-emitting area OA further includes a light-emitting structure 5, a first insulating layer 8 and a first connection hole (not marked in FIG. 1); the first insulating layer 8 is located between the light-emitting structure 5 and the first metal. Between the layers 1; the first connection hole penetrates the first insulating layer 8; the first conductive glue 2 is located in the first connection hole; the light emitting structure 5 is electrically connected to the first metal layer 1 through the first conductive glue 2.
- the binding area OB also includes a circuit board 9, a second insulating layer 12, and a second connection hole (not marked in FIG. 1); the second insulating layer 12 is located between the circuit board 9 and the second metal layer 3.
- the second connecting hole penetrates the second insulating layer 12; the second conductive glue 4 is located in the second connecting hole; the circuit board 9 is electrically connected to the second metal layer 3 through the second conductive glue 4.
- the above-mentioned first connection hole penetrates the first insulating layer, and the second connection hole penetrates the second insulating layer means: the first insulating layer at the location of the first connection hole has been removed, or the second connection hole at the location of the second connection hole has been removed.
- the insulating layer has been removed.
- the above-mentioned first insulating layer may include a first insulating sublayer 7 and a first flat sublayer 6 as shown in FIG. It can also play a flattening role.
- the above-mentioned second insulating layer may include a second insulating sublayer 10 and a second flat sublayer 11 as shown in FIG. Role, it can also play a flattening role.
- the light emitting structure is a micro light emitting diode chip.
- micro light emitting diode chip may be a Mini LED chip or a Micro LED chip.
- the shape of the micro light emitting diode chip may be a rectangle, and the light emitting color of the micro light emitting diode chip may be white.
- the light-emitting area OA further includes a third metal layer 13, a third insulating layer 16, and a third connection hole (not marked in FIG. 1); the third insulating layer 16 is located on the third metal layer 13. And the first metal layer 1; the third connection hole penetrates the third insulating layer 16, and the third metal layer 13 is electrically connected to the first metal layer 1 through the third connection hole.
- the bonding area OB further includes a fourth metal layer 20, a fourth insulating layer 19, and a fourth connection hole (not marked in FIG. 1); the fourth insulating layer 19 is located on the fourth metal layer 20 and the second Between the metal layers 3; the fourth connection hole penetrates the fourth insulating layer 19, and the fourth metal layer 20 is electrically connected to the second metal layer 3 through the fourth connection hole.
- the above-mentioned third connecting hole penetrates the third insulating layer, and the fourth connecting hole penetrates the fourth insulating layer means that the third insulating layer at the position of the third connecting hole has been removed, or the fourth connecting hole is located at the fourth insulating layer.
- the insulating layer has been removed.
- the above-mentioned third insulating layer may include a third insulating sublayer 15 and a third flat sublayer 14 as shown in FIG. Role, it can also play a flattening role.
- the above-mentioned fourth insulating layer 19 may include a fourth insulating sublayer 18 and a fourth flat sublayer 17 as shown in FIG.
- the role of, can also play a flattening role.
- the above-mentioned multiple light-emitting regions and binding portions are all located on the organic layer 21 as shown in FIG. 1, and the organic layer 21 is located on the substrate 22.
- the organic layer is a flexible substrate, such as polyimide (PI); the substrate is a rigid substrate, and the substrate is finally peeled off.
- the organic layer is an organic buffer layer, the substrate is a rigid base, and the substrate remains.
- the embodiments of the present disclosure provide a backlight module, which includes the substrate as in the above embodiments.
- the backlight module has the characteristics of low power consumption, long service life, and zonal control of the light source.
- the backlight module can also include a diffuser, a driving circuit and other structures, which can be determined according to actual needs, and will not be repeated here.
- the backlight module can be used in any display device or component that needs to provide backlight.
- the backlight module can be a rigid backlight module or a flexible backlight module (that is, bendable, foldable); or other backlights Any of the modules.
- the embodiment of the present disclosure provides a display device including the substrate as in the above embodiment.
- the display device can be a rigid display device or a flexible display device (that is, bendable and foldable).
- the display device can be any of Micro OLED micro display devices, Mini LED micro display devices or other micro display devices, as well as any products with display functions such as televisions, digital cameras, mobile phones, tablet computers, etc. including these micro display devices Or parts.
- the embodiment of the present disclosure provides a method for manufacturing a substrate as in the above embodiment.
- the manufacturing method of the substrate includes:
- the material of the third metal layer and the fourth metal layer may be copper; the third metal layer and the fourth metal layer Can be collectively referred to as the first copper layer (Cu1).
- a third insulating layer 16 is formed on the third metal layer 13, and a fourth insulating layer 19 is formed on the fourth metal layer 20.
- the third insulating layer 16 may include a third insulating sublayer 15 and a third flat sublayer 14.
- the fourth insulating layer 19 may include a fourth insulating sublayer 18 and a fourth flat sublayer 17.
- the third insulating sublayer and the fourth insulating sublayer can be collectively referred to as the first protective layer (PVX1), and the third flat sublayer and the fourth flat sublayer can be collectively referred to as the first flat layer (OC1).
- PVX1 first protective layer
- OC1 first flat layer
- a first metal layer 1 is formed on the third insulating layer 16 and a second metal layer 3 is formed on the fourth insulating layer 19; wherein, the first metal layer and the second metal layer can be Collectively referred to as the second copper layer (Cu2).
- a first insulating layer 8 is formed on the first metal layer 1, and a second insulating layer 12 is formed on the second metal layer 3.
- the first insulating layer 8 may include a first insulating sublayer 7 and a first flat sublayer 6.
- the second insulating layer 12 may include a second insulating sublayer 10 and a second flat sublayer 11.
- the first insulating sublayer and the second insulating sublayer can be collectively referred to as the second protective layer (PVX2), and the first flat sublayer and the second flat sublayer can be collectively referred to as the second flat layer (OC2).
- PVX2 the second protective layer
- OC2 the second flat layer
- the production method is not limited.
- a patterning process may be used to form the above-mentioned layer structure.
- the patterning process is a process of forming a thin film and including at least one patterned layer.
- the patterning process usually includes: coating photoresist (PR glue) on the film, exposing the photoresist using a mask, and then using a developer to wash away the photoresist that needs to be removed, and then etching The part of the film that is not covered by the photoresist is removed, and the remaining photoresist is finally stripped to form the required layer.
- photoresist PR glue
- 4 masks ie 4Mask process
- the first copper layer (Cu1) is patterned
- the first protective layer (PVX1) is patterned
- the first flat layer ( OC1), the patterned second copper layer (Cu2), the patterned second protective layer (PVX2) and the second flat layer (OC2) each use one mask, a total of 4 masks.
- the photo-curable conductive adhesive is UV-curable conductive adhesive and the photo-curable conductive adhesive is laser-cured conductive adhesive as examples to specifically describe the coating of the photo-curable conductive adhesive and subsequent manufacturing methods.
- the light-curing conductive adhesive is an ultraviolet light-curing conductive adhesive
- the manufacturing method of the substrate further includes:
- UV Mask ultraviolet mask
- the photo-curable conductive adhesive of the substrate is laser-cured conductive adhesive
- the manufacturing method of the substrate further includes:
- S1702 Place a laser mask 104 as shown in FIG. 3 on the substrate, and align the opening position of the laser mask 104 with the position of the laser curing conductive adhesive, and use the laser light source 103 to cure the laser
- the conductive adhesive position is irradiated, and the laser curing conductive adhesive is cured.
- the first conductive adhesive of different materials is selected, and ultraviolet light/laser is used to irradiate only the area where the first conductive adhesive is located, thereby curing the first conductive adhesive; at the same time, an ultraviolet mask/laser mask is used to shield and bind Zone, so as to prevent the second metal layer in the binding zone from being oxidized due to the influence of light.
- the manufacturing method further includes:
- the second conductive adhesive here is a thermally curable conductive adhesive, so that the second conductive adhesive can be cured by a subsequent hot pressing process.
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Abstract
Description
Claims (18)
- 一种基板,其中,所述基板用于显示或提供背光,所述基板包括:绑定区和多个发光区;所述发光区包括第一金属层和位于所述第一金属层上的第一导电胶,所述第一导电胶为光固化导电胶;并且所述绑定区包括第二金属层和位于所述第二金属层上的第二导电胶。
- 根据权利要求1所述的基板,其中,所述光固化导电胶为紫外光固化导电胶或者激光固化导电胶。
- 根据权利要求2所述的基板,其中,所述紫外光固化导电胶的材料包括紫外光固定胶和纳米金属粉。
- 根据权利要求2所述的基板,其中,所述激光固化导电胶的材料包括激光固化胶和纳米金属粉。
- 根据权利要求1所述的基板,其中,所述第一导电胶掺杂有导电金属球。
- 根据权利要求5所述的基板,其中,所述导电金属球的粒径范围为5μm-30μm。
- 根据权利要求5所述的基板,其中,所述导电金属球为锡金属球或铜金属球。
- 根据权利要求7所述的基板,其中,所述锡金属球和所述铜金属球为实心的金属球;或者所述锡金属球和所述铜金属球分别为塑料球体上涂覆锡金属或铜金属构成的具有核壳结构的金属球。
- 根据权利要求1所述的基板,其中,所述第二导电胶为热固化导电胶。
- 根据权利要求1所述的基板,其中,所述第一金属层和所述第二金属层同层设置。
- 根据权利要求1所述的基板,其中,所述发光区还包括发光结构、第一绝缘层和第一连接孔,所述第一绝缘层位于所述发光结构和所述第一金属层之间,所述第一连接孔贯穿所述第一绝缘层,所述第一导电胶位于所述第一连接孔内,所述发光结构通过所述第一导电胶与所述第一金属层电连接;并且所述绑定区还包括电路板、第二绝缘层和第二连接孔,所述第二绝缘层位于所述电路板和所述第二金属层之间,所述第二连接孔贯穿所述第二绝缘层,所述第二导电胶位于所述第二连接孔内,所述电路板通过所述第二导电胶与所述第二金属层电连接。
- 根据权利要求11所述的基板,其中,所述第一绝缘层包括第一绝缘子层和第一平坦子层,所述第二绝缘层包括第二绝缘子层和第二平坦子层。
- 根据权利要求11所述的基板,其中,所述发光结构为微发光二极管芯片。
- 根据权利要求13所述的基板,其中,所述发光区还包括第三金属层、第三绝缘层和第三连接孔,所述第三绝缘层位于所述第三金属层和所述第一金属层之间,所述第三连接孔贯穿所述第三绝缘层,所述第三金属层通过所述第三连接孔和所述第一金属层电连接;并且所述绑定区还包括第四金属层、第四绝缘层和第四连接孔,所述第四绝缘层位于所述第四金属层和所述第二金属层之间,所述第四连接孔贯穿所述第四绝缘层,所述第四金属层通过所述第四连接孔和所述第二金属层电连接。
- 根据权利要求14所述的基板,其中,所述第三绝缘层包括第三绝缘子层和第三平坦子层,所述第四绝缘层包括第四绝缘子层和第四平坦子层。
- 根据权利要求1所述的基板,其中,所述第一金属层和所述第二金属层的材料为铜、铝、钼或钛。
- 一种背光模组,其中,所述背光模组包括如权利要求1-16任一项所述的基板。
- 一种显示装置,其中,所述显示装置包括如权利要求1-16任一项所述的基板。
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CN114871081A (zh) * | 2022-06-02 | 2022-08-09 | 福耀玻璃工业集团股份有限公司 | 导电胶层的制备方法、调光组件的制备方法和调光玻璃的制备方法 |
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