WO2021254405A1 - 显示基板及其制备方法、显示装置 - Google Patents

显示基板及其制备方法、显示装置 Download PDF

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Publication number
WO2021254405A1
WO2021254405A1 PCT/CN2021/100444 CN2021100444W WO2021254405A1 WO 2021254405 A1 WO2021254405 A1 WO 2021254405A1 CN 2021100444 W CN2021100444 W CN 2021100444W WO 2021254405 A1 WO2021254405 A1 WO 2021254405A1
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WIPO (PCT)
Prior art keywords
layer
back plate
light
pixel defining
gas
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PCT/CN2021/100444
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English (en)
French (fr)
Inventor
马坤
张晓晋
王丹
赵梦
高荣荣
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京东方科技集团股份有限公司
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Priority to US17/772,449 priority Critical patent/US20230006008A1/en
Publication of WO2021254405A1 publication Critical patent/WO2021254405A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a display substrate, a preparation method thereof, and a display device.
  • Organic Light Emitting Diode (Organic Light Emitting Diode, OLED for short) has been widely used in the display field due to its advantages of self-luminescence, low driving voltage, high luminous efficiency, fast response speed, and flexible display.
  • a display substrate in one aspect, includes a backplane, a pixel defining layer, a gas absorption layer, and a light-emitting layer.
  • the pixel defining layer is disposed on one side of the back plate, and the pixel defining layer has a plurality of openings.
  • the gas absorbing layer is arranged on the side of the pixel defining layer away from the back plate, and the gas absorbing layer is configured to absorb gas generated by the action of the pixel defining layer and ultraviolet rays; the gas absorbing layer exposes the poly At least a partial area of each opening.
  • the light-emitting layer covers at least an area of the plurality of openings exposed by the gas absorption layer.
  • the orthographic projection of the gas absorbing layer on the back plate is located within the orthographic projection range of the pixel defining layer on the back plate.
  • the orthographic projection of the gas absorbing layer on the backplane and the orthographic projection of the pixel defining layer on the backplane substantially coincide.
  • the material of the gas absorption layer includes at least one of ethylene/methyl acrylate/cyclohexenyl acrylate terpolymer, maleic anhydride ester compound, and ferrous diaminetetraacetate.
  • the thickness of the gas absorbing layer in a direction perpendicular to the surface of the back plate ranges from about 0.05 ⁇ m to about 0.5 ⁇ m.
  • the display substrate further includes: a light absorbing layer disposed on a side of the gas absorbing layer away from the back plate.
  • the orthographic projection of the light absorbing layer on the back plate is located within the orthographic projection range of the gas absorbing layer on the back plate, or the orthographic projection of the light absorbing layer on the back plate and the The orthographic projections of the gas absorbing layer on the back plate are substantially coincident.
  • the orthographic projection of the light absorbing layer on the backplane and the orthographic projection of the light-emitting layer on the backplane do not overlap.
  • the material of the light absorbing layer includes an ultraviolet absorber.
  • the material of the light absorbing layer includes at least one of acrylate prepolymer and titanium dioxide.
  • the thickness of the light absorbing layer in a direction perpendicular to the surface of the back plate ranges from about 0.05 ⁇ m to about 0.5 ⁇ m.
  • the preparation method includes: preparing a back plate; forming a pixel defining layer on one side of the back plate; the pixel defining layer has a plurality of openings; forming gas absorption on the side of the pixel defining layer away from the back plate
  • the gas absorbing layer is configured to absorb gas generated by the action of the pixel defining layer and ultraviolet rays; the gas absorbing layer exposes at least part of the area of the plurality of openings; the gas absorbing layer is away from the back plate
  • a light-emitting layer is formed on one side of the light-emitting layer, and the light-emitting layer covers at least an area of the plurality of openings exposed by the gas absorption layer.
  • the orthographic projection of the gas absorbing layer on the back plate is within the orthographic projection range of the pixel defining layer on the back plate, or the gas absorbing layer is on the back plate.
  • the orthographic projection on the upper surface roughly coincides with the orthographic projection of the pixel defining layer on the backplane.
  • the step of forming the gas absorption layer includes: sequentially forming a sacrificial layer and a photoresist layer on the side of the pixel defining layer away from the back plate; Patterning the resist layer, removing the sacrificial layer and the photoresist layer covering the pixel defining layer, and leaving the sacrificial layer and the photoresist layer in the plurality of openings; A gas absorption film is formed on the side of the patterned photoresist layer away from the back plate and the side of the pixel defining layer away from the back plate; the sacrificial layer remaining after the patterning is stripped to remove the patterning The sacrificial layer retained later, the photoresist layer retained after patterning, and the portion of the gas absorbing film located in the plurality of openings, to obtain the gas absorbing layer.
  • the preparation method further includes: before forming the light-emitting layer, forming a light absorbing layer on a side of the gas absorbing layer away from the back plate.
  • the step of forming the gas absorption layer and the light absorption layer includes: sequentially forming a sacrificial layer and a photoresist layer on the side of the pixel defining layer away from the back plate; The sacrificial layer and the photoresist layer are patterned, the part of the sacrificial layer and the photoresist layer covering the pixel defining layer is removed, and the sacrificial layer and the photoresist layer are left in the poly A portion within an opening; a gas absorbing film and a light absorbing film are sequentially formed on the side of the patterned photoresist layer away from the back plate and the side of the pixel defining layer away from the back plate; After the sacrificial layer is stripped, the sacrificial layer remaining after the patterning, the photoresist layer remaining after the patterning, and the portions of the gas absorption film and the light absorption film located in the plurality of openings are removed to obtain The gas absorption layer and the light absorption layer.
  • a display device in another aspect, includes the display substrate as described in any of the above embodiments.
  • FIG. 1 is a structural diagram of a display substrate according to some embodiments of the present disclosure
  • FIG. 2 is a structural diagram of another display substrate according to some embodiments of the present disclosure.
  • FIG. 3 is a structural diagram of still another display substrate according to some embodiments of the present disclosure.
  • FIG. 4 is a structural diagram of still another display substrate according to some embodiments of the present disclosure.
  • FIG. 5 is a flowchart of a method for manufacturing a display substrate according to some embodiments of the present disclosure
  • Figure 6 is a flow chart of S100 in Figure 5;
  • Figure 7 is a flow chart of S300 in Figure 5;
  • Fig. 8 is another flow chart of S300 in Fig. 5;
  • 9A to 9G are flow charts for preparing a display substrate according to some embodiments of the present disclosure.
  • 10A to 10B are flow charts of the preparation of a gas absorption layer and a light absorption layer according to some embodiments of the present disclosure
  • FIG. 11 is a structural diagram of a display device according to some embodiments of the present disclosure.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features.
  • plural means two or more.
  • the expression “connected” and its extensions may be used.
  • the term “connected” may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
  • the term “coupled” may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact.
  • At least one of A, B, and C has the same meaning as “at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, A Combination with B, combination of A and C, combination of B and C, and combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and the combination of A and B.
  • “approximately” or “approximately” includes the stated value as well as the average value within the acceptable deviation range of the specified value, where the acceptable deviation range is considered by those of ordinary skill in the art to be discussed The measurement and the error associated with the measurement of a specific quantity (ie, the limitations of the measurement system) are determined. "Approximately coincident” includes absolute coincidence and approximate coincidence, wherein the acceptable deviation range of approximate coincidence may be, for example, a deviation range within five percent of the absolute coincidence area. In addition, “approximately” can refer to, for example, the stated value, or it may fluctuate by ten percent on the basis of the stated value.
  • the exemplary embodiments are described herein with reference to cross-sectional views and/or plan views as idealized exemplary drawings.
  • the thickness of layers and regions are exaggerated for clarity. Therefore, variations in the shape with respect to the drawings due to, for example, manufacturing technology and/or tolerances can be envisaged. Therefore, the exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing.
  • the etched area shown as a rectangle will generally have curved features. Therefore, the areas shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shape of the area of the device, and are not intended to limit the scope of the exemplary embodiments.
  • the display substrate 100 has a display area A and a frame area B located on at least one side of the periphery of the display area A.
  • the border area B is located around the display area A and surrounds the display area A.
  • the border area B is located at a part of the periphery of the display area A, and does not surround the display area A.
  • the border area B is located on opposite sides of the display area A.
  • the frame area B is located on two adjacent sides of the display area A.
  • the frame area B is only located on one side of the display area A.
  • the above-mentioned display substrate 100 includes a back plate 1.
  • the backplane 1 includes a substrate 11 and a plurality of pixel driving circuits 12 provided on one side of the substrate 11.
  • the above-mentioned display area A includes a plurality of sub-pixel areas P, and each sub-pixel area P is provided with, for example, one pixel driving circuit 12.
  • the above-mentioned substrate 11 has a variety of structures, which can be selected and set according to actual needs.
  • the substrate 11 is only a base substrate.
  • the substrate 11 includes a base substrate and a functional film disposed on the base substrate, where the functional film includes, for example, a buffer layer.
  • the base substrate may be a rigid base substrate.
  • the rigid base substrate may be, for example, a glass base substrate or a PMMA (Polymethyl methacrylate) base substrate.
  • the above-mentioned display substrate 100 may be a rigid display substrate.
  • the base substrate may be a flexible base substrate.
  • the flexible base substrate may be, for example, a PET (Polyethylene terephthalate, polyethylene terephthalate) base substrate, a PEN (Polyethylene naphthalate two formal acid glycolester, polyethylene naphthalate) base substrate, or PI (Polyimide, polyimide) base substrate.
  • the above-mentioned display substrate 100 may be a flexible display substrate.
  • the above-mentioned pixel driving circuit 12 may include multiple structures, which may be selected and set according to actual needs.
  • the structure of the pixel driving circuit 12 may include structures such as “2T1C”, “6T1C”, “7T1C”, “6T2C” or “7T2C”.
  • T represents thin film transistors
  • the number before “T” represents the number of thin film transistors
  • C represents storage capacitors
  • the number before “C” represents the number of storage capacitors.
  • one thin film transistor is a driving transistor.
  • each pixel driving circuit 12 in the sub-pixel area P in the same row may be electrically connected to a gate line GL
  • each pixel driving circuit 12 in the sub-pixel area P in the same column may be electrically connected to a data line DL.
  • each pixel driving circuit 12 in the sub-pixel area P of the same column may also be electrically connected to other signal lines, which is not limited in the present disclosure.
  • each pixel driving circuit 12 in the sub-pixel area P of the same column may also be electrically connected to the first voltage signal line VL1 for transmitting the VDD signal or the second voltage signal line VL2 for transmitting the VSS signal.
  • the following takes the structure of the pixel driving circuit 12 as "2T1C" (that is, the pixel driving circuit 12 includes a driving transistor T1, a switching transistor T2, and a storage capacitor C) as an example.
  • the structure of the display substrate 100 is schematically illustrated.
  • At least one of the driving transistor T1 and the switching transistor T2 may be a top-gate thin film transistor, or at least one may be a bottom-gate thin film transistor.
  • the driving transistor T1 and the switching transistor T2 are both top-gate thin film transistors as an example.
  • the display substrate 100 further includes: disposed on a side of the plurality of pixel driving circuits 12 away from the back plate 1, and electrically connected to the plurality of pixel driving circuits 12, respectively.
  • the OLED light-emitting device 2 includes: a first electrode layer 21, a light-emitting layer 22 and a second electrode layer 23 that are sequentially stacked in a direction away from the backplane 1.
  • the first electrode layer 21 includes a plurality of first electrodes 211, and each pixel driving circuit 12 can be electrically connected to its corresponding first electrode 211.
  • the first electrode layer 21 may be an anode layer, and the first electrode layer 21 may be an anode layer.
  • the second electrode layer 23 is a cathode layer. At this time, the second electrode layer 23 may also be electrically connected to the second voltage signal line VL2 for transmitting the VSS signal.
  • the first electrode layer 21 may be a cathode layer, and the second electrode layer 23 may be an anode. At this time, the second electrode layer 23 can also be electrically connected to the first voltage signal line VL1 for transmitting the VDD signal.
  • each pixel driving circuit 12 can cooperate with its corresponding voltage signal line to control the light-emitting state of the OLED light-emitting device 2 corresponding to the pixel driving circuit 12.
  • At least two second electrodes in the second electrode layer 23 may be connected to each other, for example, all the second electrodes in the second electrode layer 23 are connected to each other and form an integral structure.
  • the OLED light emitting device 2 may also include: an electron transport layer (election transporting layer, ETL for short), an electron injection layer (election injection layer, EIL for short), a hole transporting layer (HTL for short), and One or more layers in the hole injection layer (HIL).
  • the OLED light emitting device 2 further includes a hole injection layer and/or a hole transport layer disposed between the anode and the light emitting layer 22, and an electron injection layer and/or electrons disposed between the cathode and the light emitting layer 22. Transport layer.
  • the hole injection layer is located on the side of the hole transport layer close to the anode.
  • the electron injection layer is provided on the side of the electron transport layer close to the cathode.
  • one or more of the above-mentioned hole injection layer, hole transport layer, electron injection layer, and electron transport layer may be provided as a whole layer, that is.
  • the above-mentioned display substrate 100 further includes: a pixel defining layer 3 provided on one side of the back plate 1.
  • the pixel defining layer 3 is located on the side of the plurality of first electrodes 211 away from the substrate 11, that is, the pixel defining layer 3 can be prepared later than the plurality of first electrodes 211 Formed in the process.
  • the pixel defining layer 3 has a plurality of openings K.
  • the shape of each opening K in the pixel defining layer 3 may be an inverted trapezoid as shown in FIGS. 2 to 4.
  • the plurality of openings K may be in one-to-one correspondence with the plurality of first electrodes 211 in the plurality of OLED light emitting devices 2 described above.
  • the orthographic projection of the edge of at least one opening K on the substrate 11 is connected to the orthographic projection of the corresponding first electrode 21 on the substrate 11, or the edge of at least one opening K (for example, including at least one opening K away from The orthographic projection of the edge on the side of the back plate 1 and the edge of the at least one opening K on the side of the back plate 1) on the substrate 11 is within the range of the orthographic projection of the corresponding first electrode 211 on the substrate 11.
  • connecting can mean that the edges of the two orthographic projection graphics just touch; at this time, the touched edge parts roughly overlap.
  • the pattern enclosed by the orthographic projection of the edge of the at least one opening K away from the back plate 1 on the substrate 11 just touches the edge of the orthographic projection of the corresponding first electrode 21 on the substrate 11.
  • the multiple openings K may correspond to the light-emitting layers 22 corresponding to the multiple OLED light-emitting devices 2 one-to-one, and the light-emitting layer 22 corresponding to one OLED light-emitting device 2 is at least partially located in one opening K.
  • the positional relationship between the light-emitting layer 22 and the opening K includes multiple types, which are related to the preparation process of the light-emitting layer 22.
  • the light-emitting layer 22 may be prepared by an inkjet printing process. At this time, as shown in FIGS. 3 and 4, the light-emitting layer 22 corresponding to an OLED light-emitting device 2 may all be located in the opening K corresponding to the OLED light-emitting device 2. In this case, the light-emitting layer 22 may be arranged in a block shape; at this time, the light-emitting layers 22 corresponding to at least two of the plurality of OLED light-emitting devices 2 are not connected. For example, the light-emitting layers 22 corresponding to all the OLED light-emitting devices 2 are not connected.
  • the light-emitting layer 22 may be prepared by an evaporation process. At this time, as shown in FIG. 2, a part of the light-emitting layer 22 corresponding to an OLED light-emitting device 2 may be located in the opening K corresponding to the OLED light-emitting device 2, and the other part may extend beyond the opening K to cover the pixel defining layer 3. .
  • the light-emitting layer 22 can be provided as a whole layer; in this case, the light-emitting layers 22 corresponding to the multiple OLED light-emitting devices 2 are all connected to each other.
  • the above-mentioned display substrate 100 further includes: a gas absorbing layer 4 disposed on the side of the pixel defining layer 3 away from the back plate 1, and the gas absorbing layer 4 is configured to absorb the pixel defining layer 3.
  • the light-emitting layer 22 at least covers the areas exposed by the gas absorption layer 4 in the plurality of openings K.
  • the present disclosure uses the orthographic projection of the gas absorbing layer 4 on the backing plate 1 and whether the closed area enclosed by the orthographic projection of the backing plate 1 on the edge of the opening K on the side close to the backing plate 1 overlaps. Whether the gas absorption layer 4 exposes at least a part of the opening K will be described.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 overlaps with the closed area enclosed by the orthographic projection of the edge of an opening K on the back plate 1 on the back plate 1, That is, the gas absorbing layer 4 exposes part of the area of the opening K; and when the orthographic projection of the gas absorbing layer 4 on the back plate 1 and the orthographic projection of an opening K on the edge of the back plate 1 on the back plate 1 are When the enclosed closed area does not overlap, that is, the gas absorbing layer 4 exposes the entire area of the opening K.
  • the gas absorption layer 4 exposes the entire area of the plurality of openings K.
  • the positional relationship between the gas absorption layer 4 and the pixel defining layer 3 includes the following multiple situations.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 is within the orthographic projection range of the pixel defining layer 3 on the back plate 1, that is, the gas absorbing layer 4 only covers the pixel defining Part of layer 3.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 and the orthographic projection of the pixel defining layer 3 on the back plate 1 roughly coincide, that is, the gas absorbing layer 4 just covers the pixel defining All of layer 3.
  • the light-emitting layer 22 when the light-emitting layer 22 is all located in the corresponding opening K, there may be no overlap between the orthographic projection of the light-emitting layer 22 on the backplane 1 and the orthographic projection of the gas absorption layer 4 on the backplane 1, or Connected; in the case where a part of the light-emitting layer 22 is located in the corresponding opening K and the other part covers the pixel defining layer 3, the orthographic projection of the light-emitting layer 22 on the backplane 1 and the gas absorption layer 4 on the backplane 1 There can be partial overlap between the orthographic projections.
  • the gas absorption layer 4 exposes a partial area of the plurality of openings K. That is, the gas absorption layer 4 exposes a partial area of a partial opening K among all the openings K.
  • the total number of all openings K is M, M>1, and M is a positive integer.
  • the gas absorption layer 4 may expose a partial area of each of the N openings K, where M ⁇ N ⁇ 1, and N is a positive integer.
  • N>1 the position and area of the region of each of the N openings K exposed by the gas absorption layer 4 may be the same or different, and the present disclosure is not limited.
  • the orthographic projection of the pixel defining layer 3 on the back plate 1 is within the orthographic projection range of the gas absorbing layer 4 on the back plate 1. That is, the gas absorption layer 4 not only completely covers the pixel defining layer 3, but also covers the remaining components (for example, the first electrode 211 shown in FIG. 4).
  • the orthographic projection of the light-emitting layer 22 on the back plate 1 and the orthographic projection of the gas absorption layer 4 on the back plate 1 may not overlap, or be connected, Or there may be a partial overlap; in the case where a part of the light-emitting layer 22 is located in the corresponding opening K and the other part covers the pixel defining layer 3, the orthographic projection of the light-emitting layer 22 on the backplane 1 and the gas absorption layer 4 are There may be a partial overlap between the orthographic projections on the back plate 1.
  • the present disclosure can also set whether there is an intersection between the orthographic projection of the gas absorbing layer 4 on the back plate 1 and the closed area enclosed by the orthographic projection of the opening K on the side of the opening K on the side away from the back plate 1.
  • the stacking explains whether the gas absorbing layer 4 exposes at least a part of the area of the opening K.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 overlaps with the closed area enclosed by the orthographic projection of the edge of an opening K on the side away from the back plate 1 on the back plate 1, That is, the gas absorbing layer 4 exposes a partial area of the opening K; and when the orthographic projection of the gas absorbing layer 4 on the backplane 1 and the orthographic projection of an opening K on the side away from the backplane 1 on the backplane 1 When the enclosed closed area does not overlap, that is, the gas absorbing layer 4 exposes the entire area of the opening K.
  • the gas absorption layer 4 exposes the entire area of the plurality of openings K.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 is within the orthographic projection range of the pixel defining layer 3 on the back plate 1.
  • the gas absorbing layer 4 does not affect the pixel defining layer 3
  • the side wall at the position of the middle opening K forms a covering.
  • the light-emitting layer 22 When the light-emitting layer 22 is all located in the corresponding opening K, there is no overlap or contact between the orthographic projection of the light-emitting layer 22 on the back plate 1 and the orthographic projection of the gas absorption layer 4 on the back plate 1; When a part of the light-emitting layer 22 is located in the corresponding opening K and the other part covers the pixel defining layer 3, the orthographic projection of the light-emitting layer 22 on the backplane 1 and the orthographic projection of the gas absorption layer 4 on the backplane 1 are different. There can be no overlap, or connection, or partial overlap.
  • the gas absorption layer 4 exposes a partial area of the plurality of openings K. That is, the gas absorption layer 4 exposes a partial area of a partial opening K among all the openings K.
  • the gas absorption layer 4 may expose a partial area of each of the Q openings K, where P ⁇ Q ⁇ 1, and Q is a positive integer.
  • the position and area of each of the Q openings K exposed by the gas absorption layer 4 may be the same or different, and the present disclosure is not limited.
  • the gas absorption layer 4 at least partially covers the sidewall at the position of at least one opening K in the pixel defining layer 3. At this time, the gas absorption layer 4 exposes a plurality of Part of the area of the opening K.
  • the gas absorbing layer 4 partially covers the side wall at the position of at least one opening K in the pixel defining layer 3.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 is located on the pixel defining layer 3 on the back plate. 1 within the orthographic projection range.
  • the gas absorbing layer 4 completely covers the sidewall at the position of at least one opening K in the pixel defining layer 3.
  • the orthographic projection of the gas absorption layer 4 on the back plate 1 and the orthographic projection of the pixel defining layer 3 on the back plate 1 roughly coincide; or, as shown in FIG. 4, the pixel defining layer 3 is The orthographic projection on the back plate 1 is located within the orthographic projection range of the gas absorption layer 4 on the back plate 1.
  • the relative positional relationship between the light-emitting layer 22 and the gas absorption layer 4 can be set with reference to some of the above-mentioned examples related to FIGS. 3 and 4, and will not be repeated here.
  • the inventors of the present disclosure have discovered through research that the pixel defining layer 3 is prone to generate gases such as oxygen (O 2 ) and/or water vapor (H 2 O) under the irradiation of ambient light (for example, including ultraviolet rays).
  • gases such as oxygen (O 2 ) and/or water vapor (H 2 O) under the irradiation of ambient light (for example, including ultraviolet rays).
  • the gas easily corrodes the light-emitting layer 22, resulting in a reduction in the effective light-emitting area of the light-emitting layer 22, which in turn easily reduces the luminous efficiency of the OLED light-emitting device 2 and affects the display effect of the OLED display substrate.
  • a gas absorbing layer 4 is provided on the side of the pixel defining layer 3 away from the back plate 1.
  • the gas absorbing layer 4 can absorb the gas generated by the pixel defining layer 3 and ultraviolet rays, thereby effectively avoiding the gas erosion.
  • the light-emitting layer 22 reduces the light-emitting efficiency of the light-emitting device 2, which is beneficial to improve the display effect of the display substrate 100.
  • free radicals for example, including P ⁇
  • the free radicals can react with gases such as O 2 and/or H 2 O to react with O 2 and/or H 2 O and other gases are trapped and absorbed.
  • the gas absorption layer 4 can better capture and absorb gases such as O 2 and/or H 2 O, thereby helping to prevent the gas from corroding the light-emitting layer 22 and causing the luminous efficiency of the light-emitting device 2 to decrease, thereby reducing the luminous efficiency of the light-emitting device 2
  • the display effect of the display substrate 100 can be improved.
  • the gas absorption layer 4 can be used to separate the light-emitting layer 22 and the pixel defining layer 3 are partially isolated, so that the contact area between the light emitting layer 22 and the pixel defining layer 3 can be reduced, thereby helping to reduce the O 2 and/or H 2 O and other gases generated by the pixel defining layer 3 The probability that the light-emitting layer 22 contacts and corrodes the light-emitting layer 22.
  • the free radicals generated by the gas absorption layer 4 due to ambient light irradiation can be utilized.
  • the gas absorption layer 4 can be used to protect the light-emitting layer 22, reduce or even avoid the erosion of the light-emitting layer 22 caused by gases such as O 2 and/or H 2 O, and reduce or even avoid a reduction in the effective light-emitting area of the light-emitting layer 22.
  • the luminous efficiency of the OLED light-emitting device 2 is improved, and the display effect of the display substrate 100 is improved.
  • the gas absorption layer 4 is disposed on the side surface of the pixel defining layer 3 away from the back plate 1, and there may be no other thin film disposed between the two, but direct contact.
  • gas absorption layer 4 may be prepared and formed in advance compared to the light-emitting layer 22.
  • the above-mentioned gas absorption layer 4 includes a variety of materials, which can be selected and set according to actual needs.
  • the material of the gas absorption layer 4 includes at least one of ethylene/methyl acrylate/cyclohexenyl acrylate terpolymer, maleic anhydride ester compound, and ferrous diaminetetraacetate.
  • the thickness of the gas absorbing layer 4 (that is, the size of the gas absorbing layer 4 in the direction perpendicular to the surface of the back plate 1) includes multiple types, which can be selected and set according to actual needs.
  • the thickness of the gas absorption layer 4 in the direction perpendicular to the surface of the back plate 1 ranges from about 0.05 ⁇ m to about 0.5 ⁇ m.
  • the thickness of the gas absorption layer 4 may be 0.045 ⁇ m, 0.05 ⁇ m, 0.055 ⁇ m, 0.1 ⁇ m, 0.13 ⁇ m, 0.18 ⁇ m, 0.2 ⁇ m, 0.3 ⁇ m, 0.44 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, or the like.
  • the thickness of the gas absorbing layer 4 helps to ensure that the gas absorbing layer 4 can generate more or sufficient free radicals when the display substrate 100 is irradiated by ambient light, which can cause damage to the pixel defining layer 3 O 2 and/or H 2 O and other gases are more fully captured and absorbed, so as to ensure that the gas absorption layer 4 has a better protective effect on the light-emitting layer 22; moreover, it is also beneficial to avoid the large-scale impact caused by the provision of the gas absorption layer 4 The thickness of the display substrate 100 is increased.
  • the above-mentioned display substrate 100 further includes: a light absorption layer 5 disposed on the side of the gas absorption layer 4 away from the back plate 1.
  • the light absorbing layer 5 may be provided on the side surface of the gas absorbing layer 4 away from the back plate 1, and there may be no other film provided between the two, but direct contact.
  • the light absorbing layer 5 may be prepared and formed in advance compared to the light emitting layer 22.
  • the positional relationship between the light absorbing layer 5 and the gas absorbing layer 4 includes multiple types, which can be selected and set according to actual needs.
  • the orthographic projection of the light absorbing layer 5 on the back plate 1 is within the range of the orthographic projection of the gas absorbing layer 4 on the back plate 1, that is, the light absorbing layer 5 is only Cover a part of the gas absorbing layer 4.
  • the orthographic projection of the light absorbing layer 5 on the back plate 1 is within the orthographic projection range of the pixel defining layer 3 on the back plate 1, and the light absorbing layer 5 only covers the pixels Part of the defining layer 3; for another example, the orthographic projection of the light absorbing layer 5 on the back plate 1 and the orthographic projection of the pixel defining layer 3 on the back plate 1 roughly overlap, and the light absorbing layer 5 just covers all of the pixel defining layer 3; For another example, the orthographic projection of the pixel defining layer 3 on the back plate 1 is within the orthographic projection range of the light absorbing layer 5 on the back plate 1, and the light absorbing layer 5 completely covers the pixel defining layer 3.
  • the orthographic projection of the light absorbing layer 5 on the back plate 1 and the orthographic projection of the gas absorbing layer 4 on the back plate 1 roughly coincide, that is, the light absorbing layer 5 just covers the entire gas absorbing layer 4.
  • the orthographic projection of the light absorbing layer 5 on the back plate 1 may be within the orthographic projection range of the pixel defining layer 3 on the back plate 1, and the light absorbing layer 5 only covers a part of the pixel defining layer 3; for another example, the light absorbing layer 5
  • the orthographic projection on the backplane 1 can roughly coincide with the orthographic projection of the pixel defining layer 3 on the backplane 1.
  • the light absorbing layer 5 just covers all of the pixel defining layer 3; for another example, the pixel defining layer 3 is on the backplane 1.
  • the above orthographic projection can be located within the orthographic projection range of the light absorbing layer 5 on the back plate 1, and the light absorbing layer 5 completely covers the pixel defining layer 3.
  • the above-mentioned light absorbing layer 5 is configured to absorb ultraviolet rays.
  • the light absorbing layer 5 can be used to absorb the ultraviolet rays therein, which is beneficial to reduce or even eliminate the ultraviolet rays directed to the pixel defining layer 3, thereby reducing O generated by the pixel defining layer 3. 2 and/or H 2 O and other gases, and even prevent the pixel defining layer 3 from generating O 2 and/or H 2 O and other gases, thereby helping to reduce or even avoid the occurrence of O 2 and/or H 2 O and other gases on the light-emitting layer. 22 Conditions that cause erosion.
  • the gas absorbing layer 4 can also be used to generate free radicals, which can affect the O 2 and/or H 2 generated by the pixel defining layer 3 O and other gases are captured and absorbed.
  • the display substrate 100 provided by some embodiments of the present disclosure can make the gas absorbing layer 4 and the light absorbing layer 5 cooperate with each other, which can reduce the amount of ultraviolet rays directed to the pixel defining layer 3, and can also cause damage to the pixel defining layer 3.
  • O 2 and/or H 2 O and other gases are captured and absorbed, so that the light-emitting layer 22 can be protected together, which is beneficial to reduce or even avoid the erosion of the light-emitting layer 22 caused by gases such as O 2 and/or H 2 O Therefore, the luminous efficiency of the OLED light-emitting device 2 can be improved, and the display effect of the display substrate 100 can be improved.
  • the orthographic projection of the light absorbing layer 5 on the backplane 1 and the orthographic projection of the light-emitting layer 22 on the backplane 1 do not overlap.
  • the orthographic projection of the light absorbing layer 5 on the backplane 1 and the orthographic projection of the light-emitting layer 22 on the backplane 1 may be connected, or there may be a distance between the two.
  • This arrangement helps to prevent the light-emitting layer 22 from covering the light absorbing layer 5, so that the light absorbing layer 5 as a whole can absorb the ultraviolet rays directed to itself, which is beneficial to improve the ultraviolet absorbing effect of the light absorbing layer 5.
  • the above-mentioned light absorbing layer 5 includes a variety of materials, which can be selected and set according to actual needs.
  • the material of the light absorbing layer 5 includes at least one of acrylate prepolymer, ultraviolet absorber, and titanium dioxide.
  • the ultraviolet absorber may include a salicylate ultraviolet absorber, a benzophenone ultraviolet absorber, a benzotriazole ultraviolet absorber, a substituted acrylonitrile ultraviolet absorber, and a triazine ultraviolet absorber Wait.
  • the thickness of the light absorbing layer 5 (that is, the size of the light absorbing layer 5 in the direction perpendicular to the surface of the back plate 1) includes multiple types, which can be selected and set according to actual needs.
  • the thickness of the light absorbing layer 5 in the direction perpendicular to the surface of the back plate 1 ranges from about 0.05 ⁇ m to about 0.5 ⁇ m.
  • the thickness of the light absorption layer 5 may be 0.045 ⁇ m, 0.05 ⁇ m, 0.055 ⁇ m, 0.09 ⁇ m, 0.13 ⁇ m, 0.18 ⁇ m, 0.2 ⁇ m, 0.3 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, or the like.
  • the thickness of the light absorbing layer 5 helps to ensure that the light absorbing layer 5 can fully absorb the ultraviolet rays in the display substrate 100 under ambient light irradiation, thereby reducing or even avoiding the occurrence of
  • the fact that the ultraviolet rays are directed to the pixel defining layer 3 is beneficial to ensure that the light absorbing layer 5 has a good ultraviolet absorbing effect; moreover, it is also beneficial to prevent the gas absorbing layer 4 from greatly increasing the thickness of the display substrate 100.
  • Some embodiments of the present disclosure provide a method of manufacturing the display substrate 100. As shown in FIG. 5, the manufacturing method of the display substrate 100 includes steps S100 to S400.
  • step S100 as shown in FIG. 9A, the backplane 1 is prepared.
  • the structure of the backplane 1 may refer to the schematic description of the structure of the backplane 1 in some of the above embodiments, and details are not described herein again.
  • the structure of the pixel driving circuit 12 included in the backplane 1 is a "2T1C" structure, and the driving transistor T1 and the switching transistor T2 are top-gate transistors as an example to illustrate the process of preparing the backplane 1. instruction.
  • preparing the backplane 1 includes steps S110 to S160.
  • an active thin film is formed on one side of the substrate 11.
  • the active thin film includes a first active layer of a plurality of driving transistors T1 and a second active layer of a plurality of switching transistors T2.
  • a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD for short) process may be used to form the above-mentioned active film.
  • step S120 a gate insulating layer is formed on the side of the active film away from the substrate 11.
  • a PECVD process may be used to form the gate insulating layer.
  • a first gate conductive layer is formed on the side of the gate insulating layer away from the substrate 11.
  • the first gate conductive layer includes first gates of a plurality of driving transistors T1, second gates of a plurality of switching transistors T2, and first plates of a plurality of storage capacitors C.
  • a sputtering deposition process may be used to form the first gate conductive layer.
  • the first gate conductive layer may be one of copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), chromium (Cr), and tungsten (W) or the above A metal alloy material composed of at least two simple metal materials among a plurality of simple metal materials.
  • a second gate conductive layer is formed on the side of the first gate conductive layer away from the substrate 11.
  • the second gate conductive layer includes a plurality of second plates of storage capacitors C. Each second electrode plate is arranged opposite to a first electrode plate.
  • a sputtering deposition process may be used to form the second gate conductive layer.
  • the second gate conductive layer may use one of elementary metal materials such as Cu, Al, Mo, Ti, Cr, and W, or a metal alloy material composed of at least two elemental metal materials among the above-mentioned multiple elementary metal materials. .
  • step S150 an interlayer dielectric layer is formed on the side of the second gate conductive layer away from the substrate 11.
  • a PECVD process can be used to form the interlayer dielectric layer.
  • a source-drain conductive layer is formed on the side of the interlayer dielectric layer away from the substrate 11.
  • the source-drain conductive layer includes first sources and first drains of a plurality of driving transistors T1, and second sources and second drains of a plurality of switching transistors T2.
  • a sputtering deposition process may be used to form the source and drain conductive layers.
  • the source and drain conductive layers may be made of metal materials such as copper (Cu) and aluminum (Al).
  • a flat layer is also formed on the side of the source and drain conductive layers away from the substrate 11, and a second flat layer is formed on the side of the flat layer away from the substrate 1.
  • the first electrode layer 21 includes a plurality of first electrodes 211.
  • a pixel defining layer 3 is formed on one side of the back plate 1.
  • the pixel defining layer 3 has a plurality of openings K.
  • the pixel defining layer 3 may be located on the side of the plurality of first electrodes 211 away from the back plate 1.
  • a coating process and a curing process may be used in sequence to form the above-mentioned pixel defining film, and then a photolithography process may be used to form the above-mentioned multiple openings K to obtain the pixel defining layer 3.
  • a gas absorbing layer 4 is formed on the side of the pixel defining layer 3 away from the back plate 1.
  • the gas absorbing layer 4 is configured to absorb gas generated by the action of the pixel defining layer 3 and ultraviolet rays; the gas absorbing layer 4 is more exposed At least a partial area of the opening K.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 is within the orthographic projection range of the pixel defining layer 3 on the back plate 1.
  • the gas absorbing layer 4 only covers the side of the pixel defining layer 3 away from the back plate 1 And it is parallel to the plane part of the surface of the back plate 1.
  • the gas absorption layer 4 exposes the entire area of the plurality of openings K.
  • the orthographic projection of the gas absorbing layer 4 on the back plate 1 coincides with the orthographic projection of the pixel defining layer 3 on the back plate 1.
  • step S300 in the above step S300, forming the gas absorption layer 4 includes steps S310a to S340a.
  • step S310a as shown in FIG. 9C, a sacrificial layer 6 and a photoresist layer 7 are sequentially formed on the side of the pixel defining layer 3 away from the back plate 1.
  • the above-mentioned photoresist layer 7 includes various types of materials, which can be selected and set according to actual needs.
  • the material of the aforementioned photoresist layer 7 includes positive photoresist.
  • the resulting pattern is the same or almost the same as the pattern of the mask.
  • the material of the photoresist layer 7 includes a negative photoresist.
  • the resulting pattern is complementary or substantially complementary to the pattern of the mask.
  • the above-mentioned sacrificial layer 6 and the above-mentioned photoresist layer 7 may be formed by a coating process.
  • step S320a as shown in FIG. 9D, the sacrificial layer 6 and the photoresist layer 7 are patterned, the sacrificial layer 6 and the photoresist layer 7 are removed to cover the pixel defining layer 3, and the sacrificial layer 6 and the photoresist layer are retained.
  • the glue layer 7 is located in the part of the plurality of openings K described above.
  • the sacrificial layer 6 and the photoresist layer 7 may be patterned by using a photolithography process.
  • the above step S320 includes: setting a mask on the side of the photoresist layer 7 away from the back plate 1; exposing the photoresist layer 7 , Wherein the exposed part of the photoresist layer 7 is the part located in the plurality of openings K; then the photoresist layer 7 is developed and the sacrificial layer 6 is etched in sequence to remove the sacrificial layer 6 and the photolithography
  • the glue layer 7 collectively covers the portion of the pixel defining layer 3, and the portions of the sacrificial layer 6 and the photoresist layer 7 located in the plurality of openings K are reserved.
  • the shape of the portions of the sacrificial layer 6 and the photoresist layer 7 located in the plurality of openings K corresponds to the shape of the plurality of openings K.
  • the shape of each opening K is as shown in FIG. 9D, and the shape of the portions of the sacrificial layer 6 and the photoresist layer 7 located in the plurality of openings K may be an inverted trapezoid.
  • the sacrificial layer 6 and the photoresist layer 7 are patterned, and the portions of the sacrificial layer 6 and the photoresist layer 7 that cover the pixel definition layer 3 are removed, and only the sacrificial layer 6 and the photoresist layer 7 cover the pixel definition.
  • the layer 3 is far away from the backplane 1 and parallel to the plane part of the surface of the backplane 1, and does not include the sacrificial layer 6 and the photoresist layer 7 covering the slope part of the sidewall of the pixel defining layer 3 at the position of the opening K.
  • the sacrificial layer 6 and the photoresist layer 7 are patterned, and the portions of the sacrificial layer 6 and the photoresist layer 7 covering the pixel defining layer 3 are removed, and the sacrificial layer 6 and the photoresist layer 7 are also included to cover the pixels.
  • the defining layer 3 is away from the plane part of the back plate 1 and parallel to the surface of the back plate 1, and the sacrificial layer 6 and the photoresist layer 7 cover the slope part of the side wall of the pixel defining layer 3 at the position of the opening K.
  • a part or all of it may be removed.
  • step S330a as shown in FIG. 9E, a gas absorbing film 41 is sequentially formed on the side of the patterned photoresist layer 71 away from the back plate 1 and the side of the pixel defining layer 3 away from the back plate 1.
  • the gas absorption film 41 may be formed by a coating process (for example, spin coating) or an inkjet printing (Ink Jet Printing, IJP for short) process.
  • a curing process for example, including a high-temperature curing process may be used to cure the gas absorption film 41 to stabilize the shape of the gas absorption film 41.
  • step S340a as shown in FIG. 9F, the sacrificial layer 61 remaining after the patterning is stripped, and the sacrificial layer 61 remaining after the patterning, the photoresist layer 71 remaining after the patterning, and the gas absorption film 41 are removed.
  • the gas absorption layer 4 is obtained in the part located in the plurality of openings K.
  • a stripping liquid can be used to clean the display substrate to be formed on which the gas absorbing film 41 is formed.
  • the stripping liquid can penetrate the gas absorbing film 41 and the patterned photoresist layer 71 to sacrifice the patterned photoresist layer.
  • the layer 61 is peeled off, so that the patterned sacrificial layer 61 falls off, and the patterned photoresist layer 71 and the part of the gas absorbing film 41 located in the plurality of openings K follow the patterned sacrificial layer 61 As a result, only the part of the gas absorbing film 41 that is located on the side of the pixel defining layer 3 away from the back plate 1 is retained, and the gas absorbing layer 4 is also obtained.
  • step S400 as shown in FIG. 9G, a light-emitting layer 22 is formed on the side of the gas absorption layer 4 away from the back plate 1.
  • the light-emitting layer 22 covers at least the area of the plurality of openings K exposed by the gas absorption layer 4.
  • the above-mentioned light-emitting layer 22 may be formed by an IJP process or an evaporation process.
  • beneficial effects that can be achieved by the manufacturing method of the display substrate provided by some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the display substrate 100 provided in some of the foregoing embodiments, and will not be repeated here.
  • the gas absorption layer 4 in the preparation method of the display substrate provided by some embodiments of the present disclosure, can be obtained by peeling off the patterned sacrificial layer 61 with a stripping liquid.
  • the process is simple and easy to operate, thereby helping to avoid increasing the difficulty of preparing the display substrate 100.
  • the method for preparing the above-mentioned display substrate further includes: before forming the above-mentioned light-emitting layer 22, forming a light-absorbing layer 5 on the side of the gas-absorbing layer 4 away from the back plate 1.
  • the gas absorption layer 4 and the light absorption layer 5 are formed in the same step. This is beneficial to simplify the manufacturing process of the display substrate 100 and improve the production efficiency of the display substrate 100.
  • the steps of forming the gas absorption layer 4 and the light absorption layer 5 include steps S310b to S340b.
  • step S310b as shown in FIG. 9C, a sacrificial layer 6 and a photoresist layer 7 are sequentially formed on the side of the pixel defining layer 4 away from the back plate 1.
  • step S320b as shown in FIG. 9D, the sacrificial layer 6 and the photoresist layer 7 are patterned, the sacrificial layer 6 and the photoresist layer 7 are removed to cover the part of the pixel defining layer 3, and the sacrificial layer 6 and the photoresist layer are retained.
  • the glue layer 7 is located in the part of the plurality of openings K described above.
  • step S310b and step S320b may refer to the schematic description of step S310a and step S320a, respectively, which will not be repeated here.
  • step S330b as shown in FIG. 10A, a gas absorbing film 41 and a light absorbing film are sequentially formed on the side of the patterned photoresist layer 71 away from the back plate 1 and the side of the pixel defining layer 3 away from the back plate 1 51.
  • the process of forming the gas absorbing film 41 can refer to the above-mentioned step S330a.
  • the light absorption film 51 may be formed by a coating process (for example, spin coating) or an IJP process.
  • a curing process (for example, including a high temperature curing process) may be used to cure the light absorbing film 51 to stabilize the shape of the light absorbing film 51.
  • the light absorption film 51 may be formed on the side of the gas absorption film 41 away from the back plate 1. In this way, mixing of the material of the gas absorbing film 41 and the material of the light absorbing film 51 can be avoided.
  • step S340b as shown in FIG. 10B, the sacrificial layer 61 remaining after the patterning is stripped, the sacrificial layer 61 remaining after the patterning, the photoresist layer 71 remaining after the patterning, and the gas absorption film 41 and The portion of the light absorbing film 51 located in the plurality of openings K obtains the gas absorbing layer 4 and the light absorbing layer 5.
  • the process of peeling off the patterned sacrificial layer 61 can refer to the above step S340a.
  • the patterned photoresist layer 71 on the side of the patterned sacrificial layer 61 away from the back plate 1 as well as the gas absorption film 41 and the light absorption film 51 can be located in The parts in the plurality of openings K will fall off, so that only the part of the gas absorbing film 41 and the light absorbing film 51 that is located on the side of the pixel defining layer 3 away from the back plate 1 is left, and the gas absorbing layer 4 and the light are also obtained.
  • Absorbent layer 5 Absorbent layer 5.
  • the preparation method of the display substrate further includes: forming a hole injection layer and/or a hole transport layer; a hole and/or The hole transport layer is at least partially located in an opening K.
  • the hole injection layer and/or the hole transport layer may be prepared by an evaporation process.
  • the preparation method of the display substrate further includes: forming an electron transport layer and/or an electron injection layer; an electron transport layer and/or an electron injection layer is at least partially located in an opening K.
  • the electron transport layer and/or the electron injection layer may be prepared by an evaporation process.
  • the preparation method of the display substrate further includes: forming the second electrode layer 23.
  • the second electrode layer 23 may be prepared by an evaporation process.
  • the display device 1000 includes the display substrate 100 described in some of the above embodiments.
  • the beneficial effects that can be achieved by the display device 1000 provided by some embodiments of the present disclosure are the same as the beneficial effects that can be achieved by the display substrate 100 provided in some of the foregoing embodiments, and will not be repeated here.
  • the above-mentioned display device 1000 may be any device that displays whether it is moving (for example, video) or fixed (for example, still image), and whether it is text or image. More specifically, it is expected that the described embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, and personal data assistants (Personal Digital Assistants).
  • electronic devices such as (but not limited to) mobile phones, wireless devices, and personal data assistants (Personal Digital Assistants).
  • PDA Personal Digital Assistant
  • handheld or portable computer Global Positioning System (GPS) receiver/navigator
  • camera Moving Picture Experts Group 4 (MP4 for short) video player
  • camera Game consoles, watches, clocks, calculators, television monitors, computer monitors, car displays (e.g., odometer displays, etc.), navigators, cockpit controllers and/or displays
  • camera view displays e.g., vehicles Rear view camera displays
  • electronic photographs electronic billboards or signs
  • projectors architectural structures, packaging and aesthetic structures (for example, a display of an image of a piece of jewelry), etc.

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Abstract

一种显示基板。所述显示基板包括背板、像素界定层、气体吸收层以及发光层。所述像素界定层设置在所述背板一侧，所述像素界定层具有多个开口。所述气体吸收层设置在所述像素界定层远离所述背板一侧，所述气体吸收层被配置为吸收像素界定层与紫外线作用所产生的气体；所述气体吸收层暴露出所述多个开口的至少部分区域。所述发光层至少覆盖所述多个开口中被所述气体吸收层暴露出的区域。

Description

显示基板及其制备方法、显示装置
本申请要求于2020年6月17日提交的、申请号为202010556461.2的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板及其制备方法、显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称为OLED)，因具有自发光、驱动电压低、发光效率高、响应速度快以及可柔性显示等优点，已在显示领域得到广泛应用。
发明内容
一方面，提供一种显示基板。所述显示基板包括背板、像素界定层、气体吸收层以及发光层。所述像素界定层设置在所述背板一侧，所述像素界定层具有多个开口。所述气体吸收层设置在所述像素界定层远离所述背板一侧，所述气体吸收层被配置为吸收像素界定层与紫外线作用所产生的气体；所述气体吸收层暴露出所述多个开口的至少部分区域。所述发光层至少覆盖所述多个开口中被所述气体吸收层暴露出的区域。
在一些实施例中，所述气体吸收层在所述背板上的正投影位于所述像素界定层在所述背板上的正投影范围内。
在一些实施例中，所述气体吸收层在所述背板上的正投影与所述像素界定层在所述背板上的正投影大致重合。
在一些实施例中，所述气体吸收层的材料包括乙烯/丙烯酸甲酯/丙烯酸环己烯基三元共聚物、顺酐酯化合物和二胺四乙酸亚铁盐中的至少一种。
在一些实施例中，所述气体吸收层在垂直于背板表面方向上的厚度的取值范围为大约0.05μm～大约0.5μm。
在一些实施例中，所述显示基板还包括：设置在所述气体吸收层远离所述背板一侧的光线吸收层。所述光线吸收层在所述背板上的正投影位于所述气体吸收层在所述背板上的正投影范围内，或者，所述光线吸收层在所述背板上的正投影与所述气体吸收层在所述背板上的正投影大致重合。
在一些实施例中，所述光线吸收层在所述背板上的正投影与所述发光层在所述背板上的正投影无交叠。
在一些实施例中，所述光线吸收层的材料包括紫外线吸收剂。
在一些实施例中，所述光线吸收层的材料包括丙烯酸脂预聚物和二氧化钛中的至少一种。
在一些实施例中，所述光线吸收层在垂直于背板表面方向上的厚度的取值范围为大约0.05μm～大约0.5μm。
另一方面，提供显示基板的制备方法。所述制备方法包括：制备背板；在所述背板的一侧形成像素界定层；所述像素界定层具有多个开口；在所述像素界定层远离所述背板的一侧形成气体吸收层，所述气体吸收层被配置为吸收像素界定层与紫外线作用所产生的气体；所述气体吸收层暴露出所述多个开口的至少部分区域；在所述气体吸收层远离所述背板的一侧形成发光层，所述发光层至少覆盖所述多个开口中被所述气体吸收层暴露出的区域。
在一些实施例中，所述气体吸收层在所述背板上的正投影位于所述像素界定层在所述背板上的正投影范围内，或者，所述气体吸收层在所述背板上的正投影与所述像素界定层在所述背板上的正投影大致重合。
在一些实施例中，形成所述气体吸收层的步骤，包括：在所述像素界定层远离所述背板的一侧依次形成牺牲层和光刻胶层；对所述牺牲层和所述光刻胶层进行图案化，去除所述牺牲层和所述光刻胶层覆盖所述像素界定层的部分，保留所述牺牲层和所述光刻胶层位于所述多个开口内的部分；在图案化后的光刻胶层远离所述背板的一侧以及所述像素界定层远离所述背板的一侧形成气体吸收薄膜；对图案化后保留的牺牲层进行剥离，去除图案化后保留的牺牲层、图案化后保留的光刻胶层，以及所述气体吸收薄膜中位于所述多个开口内的部分，得到所述气体吸收层。
在一些实施例中，所述制备方法还包括：在形成所述发光层之前，在所述气体吸收层远离所述背板的一侧形成光线吸收层。
在一些实施例中，形成所述气体吸收层和所述光线吸收层的步骤，包括：在所述像素界定层远离所述背板的一侧依次形成牺牲层和光刻胶层；对所述牺牲层和所述光刻胶层进行图案化，去除所述牺牲层和所述光刻胶层覆盖所述像素界定层的部分，保留所述牺牲层和所述光刻胶层位于所述多个开口内的部分；在图案化后的光刻胶层远离所述背板的一侧以及所述像素界定层远离所述背板的一侧依次形成气体吸收薄膜和光线吸收薄膜；对图案化后的牺牲层进行剥离，去除图案化后保留的牺牲层、图案化后保留的光刻胶层，以及所述气体吸收薄膜和所述光线吸收薄膜中位于所述多个开口内的部分，得到所述气体吸收层和所述光线吸收层。
又一方面，提供一种显示装置，所述显示装置包括：如上述任一实施例 所述的显示基板。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为本公开根据一些实施例的一种显示基板的结构图；
图2为本公开根据一些实施例的另一种显示基板的结构图；
图3为本公开根据一些实施例的再一种显示基板的结构图；
图4为本公开根据一些实施例的又一种显示基板的结构图；
图5为本公开根据一些实施例的一种显示基板的制备方法的流程图；
图6为图5中S100的一种流程图；
图7为图5中S300的一种流程图；
图8为图5中S300的另一种流程图；
图9A～图9G为本公开根据一些实施例的一种显示基板的制备流程图；
图10A～图10B为本公开根据一些实施例的一种气体吸收层和光线吸收层的制备流程图；
图11为本公开根据一些实施例的一种显示装置的结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术 语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“连接”及其衍伸的表达。例如，描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如，描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一者”与“A、B或C中的至少一者”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
另外，“基于”的使用意味着开放和包容性，因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。
如本文所使用的那样，“大约”或“大致”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。“大致重合”包括绝对重合以及近似重合，其中，近似重合的可接受偏差范围例如可以是绝对重合面积大小的百分之五以内的偏差范围。此外，“大约”例如可以指所阐述的数值，还可以是所阐述的数值的基础上上下浮动百分之十。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层和区域的厚度。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域 的实际形状，并且并非旨在限制示例性实施方式的范围。
本公开一些实施例提供一种显示基板100。如图1所示，该显示基板100具有显示区A，以及位于显示区A周边至少一侧的边框区B。
在一些示例中，如图1所示，边框区B位于显示区A的四周，并包围显示区A。在另一些示例中，边框区B位于显示区A的部分周边，并未包围显示区A。例如，边框区B位于显示区A的相对两侧。再例如，边框区B位于显示区A的相邻两侧。又例如，边框区B仅位于显示区A的一侧。
在一些实施例中，如图1～图4所示，上述显示基板100包括背板1。
在一些示例中，如图1所示，背板1包括衬底11和设置在衬底11一侧的多个像素驱动电路12。示例性的，上述显示区A包括多个子像素区域P，每个子像素区域P内例如设置一个像素驱动电路12。
上述衬底11的结构包括多种，并可以根据实际需要选择设置。例如，衬底11仅为衬底基板。再例如，衬底11包括衬底基板以及设置在该衬底基板上的功能薄膜，其中，功能薄膜例如包括缓冲层。
此外，上述衬底基板的类型包括多种，具体可以根据实际需要选择设置。
示例性的，衬底基板可以为刚性衬底基板。该刚性衬底基板例如可以为玻璃衬底基板或PMMA(Polymethyl methacrylate，聚甲基丙烯酸甲酯)衬底基板。在此情况下，上述显示基板100可以为刚性显示基板。
又示例性的，衬底基板可以为柔性衬底基板。该柔性衬底基板例如可以为PET(Polyethylene terephthalate，聚对苯二甲酸乙二醇酯)衬底基板、PEN(Polyethylene naphthalate two formic acid glycol ester，聚萘二甲酸乙二醇酯)衬底基板或PI(Polyimide，聚酰亚胺)衬底基板。在此情况下，上述显示基板100可以为柔性显示基板。
上述像素驱动电路12的结构可以包括多种，可以根据实际需要选择设置。示例性的，像素驱动电路12的结构可以包括“2T1C”、“6T1C”、“7T1C”、“6T2C”或“7T2C”等结构。此处，“T”表示为薄膜晶体管，位于“T”前面的数字表示为薄膜晶体管的数量，“C”表示为存储电容器，位于“C”前面的数字表示为存储电容器的数量。像素驱动电路12所包括的多个薄膜晶体管中，存在一个薄膜晶体管为驱动晶体管。
如图1所示，为了方便说明，本公开一些示例中以上述多个子像素区域P呈阵列状排布为例进行说明。在此情况下，例如，将沿第一方向X排列成一排的子像素区域P称为同一行子像素区域P，将沿第二方向Y排列成一排的子像素区域P称为同一列子像素区域P。同一行子像素区域P内的各像素驱 动电路12可以与一条栅线GL电连接，同一列子像素区域P内的各像素驱动电路12可以与一条数据线DL电连接。此处，同一列子像素区域P内的各像素驱动电路12还可以与其他的信号线电连接，本公开对此不做限定。示例性的，同一列子像素区域P内的各像素驱动电路12还可以与用于传输VDD信号的第一电压信号线VL1或用于传输VSS信号的第二电压信号线VL2电连接。
如图2～图4所示，下面以像素驱动电路12的结构为“2T1C”的结构(也即像素驱动电路12包括一个驱动晶体管T1、一个开关晶体管T2以及一个存储电容C)为例，对显示基板100的结构进行示意性说明。
此处，驱动晶体管T1和开关晶体管T2中的至少一者可以为顶栅型薄膜晶体管，或者，至少一者可以为底栅型薄膜晶体管。下面以驱动晶体管T1和开关晶体管T2均为顶栅型薄膜晶体管为例。
在一些实施例中，如图2～图4所示，上述显示基板100还包括：设置在上述多个像素驱动电路12远离背板1的一侧、且分别与该多个像素驱动电路12电连接的多个OLED发光器件2。也即，该多个像素驱动电路12和该多个OLED发光器件2可以一一对应地电连接。
在一些示例中，如图2～图4所示，OLED发光器件2包括：沿远离背板1方向依次层叠设置的第一电极层21、发光层22以及第二电极层23。其中，第一电极层21包括多个第一电极211，每个像素驱动电路12可以和对其对应的第一电极211电连接。
参见图1～图4，示例性的，在每个像素驱动电路12还与用于传输VDD信号的第一电压信号线VL1电连接的情况下，第一电极层21可以为阳极层，而第二电极层23为阴极层，此时，第二电极层23还可以与用于传输VSS信号的第二电压信号线VL2电连接。又示例性的，在每个像素驱动电路12还与用于传输VSS信号的第二电压信号线VL2电连接的情况下，第一电极层21可以为阴极层，第二电极层23可以为阳极层；此时，第二电极层23还可以与用于传输VDD信号的第一电压信号线VL1电连接。
因此，各像素驱动电路12可以和与其对应的电压信号线相配合，从而控制与该像素驱动电路12对应的OLED发光器件2的发光状态。
此外，示例性的，第二电极层23中的至少两个第二电极可以相互连接，例如，第二电极层23中的所有第二电极相互连接并呈一体结构。
在一些示例中，OLED发光器件2还可以包括：电子传输层(election transporting layer，简称ETL)、电子注入层(election injection layer，简称EIL)、 空穴传输层(hole transporting layer，简称HTL)以及空穴注入层(hole injection layer，简称HIL)中的一层或多层。示例性的，OLED发光器件2还包括设置在阳极和发光层22之间的空穴注入层和/或空穴传输层，以及设置在阴极和发光层22之间的电子注入层和/或电子传输层。
在阳极和发光层22之间设置有空穴注入层和空穴传输层的情况下，空穴注入层位于空穴传输层靠近阳极的一侧。
在阴极和发光层22之间设置有电子注入层和电子传输层的情况下，电子注入层设置在电子传输层靠近阴极的一侧。
在一些示例中，上述空穴注入层、空穴传输层、电子注入层和电子传输层的一层或者多层可以整层设置，也即。
在一些实施例中，如图2～图4所示，上述显示基板100还包括：设置在背板1的一侧的像素界定层3。
在一些示例中，该像素界定层3位于上述多个第一电极211远离衬底11的一侧，也即，像素界定层3相比于该多个第一电极211，可以在较后的制备工艺中形成。
在一些示例中，如图2～图4所示，像素界定层3具有多个开口K。示例性的，在像素界定层3的实际制备工艺中，像素界定层3中各开口K的形状可以为如图2～图4所示的倒梯形。
示例性的，该多个开口K可以与上述多个OLED发光器件2中的多个第一电极211一一对应。其中，至少一个开口K的边缘在衬底11上的正投影与相应的第一电极21在衬底11上的正投影相接，或者，至少一个开口K的边缘(例如包括至少一个开口K远离背板1一侧的边缘和该至少一个开口K靠近背板1一侧的边缘)在衬底11上的正投影位于相应的第一电极211在衬底11上的正投影的范围内。
需要说明的是，“相接”可以指两者的正投影图形的边缘刚好发生接触；此时，相接触的边缘部分大致重合。例如，至少一个开口K远离背板1一侧的边缘在衬底11上的正投影所围成的图形与相应的第一电极21在衬底11上的正投影的边缘刚好发生接触。
在一些示例中，上述多个开口K可以与上述多个OLED发光器件2所对应的发光层22一一对应，且一个OLED发光器件2所对应的发光层22至少部分位于一个开口K内。
其中，发光层22和开口K之间的位置关系包括多种，其与发光层22的制备工艺相关。
示例性的，发光层22可以采用喷墨打印工艺制备形成。此时，如图3和图4所示，一个OLED发光器件2所对应的发光层22可以全部位于与该OLED发光器件2所对应的开口K内。在此情况下，发光层22可以呈块状设置；此时，多个OLED发光器件2中至少两个OLED发光器件2所对应的发光层22不连接。例如，所有OLED发光器件2所对应的发光层22均不连接。
示例性的，发光层22可以采用蒸镀工艺制备形成。此时，如图2所示，一个OLED发光器件2所对应的发光层22可以一部分位于与该OLED发光器件2所对应的开口K内，另一部分超出该开口K，对像素界定层3形成覆盖。在此情况下，发光层22可以整层设置；此时，多个OLED发光器件2所对应的发光层22均相互连接。
在一些实施例中，如图2～图4所示，上述显示基板100还包括：设置在像素界定层3远离背板1一侧的气体吸收层4，气体吸收层4被配置为吸收像素界定层3与紫外线作用所产生的气体；气体吸收层4暴露出多个开口K的至少部分区域。在此基础上，上述发光层22的至少覆盖多个开口K中被气体吸收层4所暴露出的区域。
如图2～图4所示，在开口K形状为倒梯形的情况下，开口K位于远离背板1一侧的边缘所包围的面积大于开口K靠近背板1一侧的边缘所包围的面积。
为了便于解释，本公开以气体吸收层4在背板1上的正投影与开口K位于靠近背板1一侧的边缘在背板1上的正投影所围成的封闭区域是否有交叠来对气体吸收层4是否暴露出开口K的至少部分区域进行说明。在此基础上，当气体吸收层4在背板1上的正投影与一个开口K位于靠近背板1一侧的边缘在背板1上的正投影所围成的封闭区域有交叠时，即气体吸收层4暴露出该开口K的部分区域；而当气体吸收层4在背板1上的正投影与一个开口K位于靠近背板1一侧的边缘在背板1上的正投影所围成的封闭区域没有交叠时，即气体吸收层4暴露出该开口K的全部区域。
基于此，在一些示例中，气体吸收层4暴露出多个开口K的全部区域。在此情况下，气体吸收层4和像素界定层3之间的位置关系包括以下多种情形。
示例性的，如图2所示，该气体吸收层4在背板1上的正投影位于像素界定层3在背板1上的正投影范围内，也即，气体吸收层4仅覆盖像素界定层3的一部分。此时，在发光层22全部位于相应的开口K内的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间无交叠； 在发光层22的一部分位于相应的开口K内、另一部分对像素界定层3形成覆盖的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以无交叠、或者相接、又或者有部分交叠。
又示例性的，如图3所示，气体吸收层4在背板1上的正投影与像素界定层3在背板1上的正投影大致重合，也即，气体吸收层4刚好覆盖像素界定层3的全部。此时，在发光层22全部位于相应的开口K内的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以无交叠、或者相接；在发光层22的一部分位于相应的开口K内、另一部分对像素界定层3形成覆盖的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以有部分交叠。
在另一些示例中，气体吸收层4暴露出多个开口K的部分区域。也即，气体吸收层4暴露出所有开口K中的部分开口K的部分区域。为了便于说明，假定所有开口K的总数为M，M＞1，且M为正整数。此时，气体吸收层4可以暴露出N个开口K中每个开口K的部分区域，其中，M≥N≥1，且N为正整数。其中，当N＞1时，气体吸收层4暴露出的N个开口K中每个开口K的区域的位置和面积可以相同，也可以不同，本公开不作限制。
在此基础上，如图4所示，至少存在一个开口K位置处，像素界定层3在背板1上的正投影位于气体吸收层4在背板1上的正投影范围内。也即，气体吸收层4不仅完全覆盖像素界定层3，同时还覆盖其余部件(例如图4中示出的第一电极211)。在发光层22全部位于相应的开口K内的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以无交叠、或者相接、又或者有部分交叠；在发光层22的一部分位于相应的开口K内、另一部分对像素界定层3形成覆盖的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以有部分交叠。
当然，本公开还可以通过设定气体吸收层4在背板1上的正投影与开口K位于远离背板1一侧的边缘在背板1上的正投影所围成的封闭区域是否有交叠来对气体吸收层4是否暴露出开口K的至少部分区域进行说明。在此基础上，当气体吸收层4在背板1上的正投影与一个开口K位于远离背板1一侧的边缘在背板1上的正投影所围成的封闭区域有交叠时，即气体吸收层4暴露出该开口K的部分区域；而当气体吸收层4在背板1上的正投影与一个开口K位于远离背板1一侧的边缘在背板1上的正投影所围成的封闭区域没有交叠时，即气体吸收层4暴露出该开口K的全部区域。
基于此，在一些示例中，气体吸收层4暴露出多个开口K的全部区域。 此时，如图2所示，该气体吸收层4在背板1上的正投影位于像素界定层3在背板1上的正投影范围内，同时，该气体吸收层4不对像素界定层3中开口K位置处的侧壁形成覆盖。在发光层22全部位于相应的开口K内的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间无交叠、或者相接；在发光层22的一部分位于相应的开口K内、另一部分对像素界定层3形成覆盖的情况下，发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以无交叠、或者相接、又或者有部分交叠。
在另一些示例中，气体吸收层4暴露出多个开口K的部分区域。也即，气体吸收层4暴露出所有开口K中的部分开口K的部分区域。为了便于说明，假定所有开口K的总数为P，P＞1，且P为正整数。此时，气体吸收层4可以暴露出Q个开口K中每个开口K的部分区域，其中，P≥Q≥1，且Q为正整数。其中，当Q＞1时，气体吸收层4暴露出的Q个开口K中每个开口K的区域的位置和面积可以相同，也可以不同，本公开不作限制。
示例性的，如图3或图4所示，气体吸收层4对像素界定层3中位于至少一个开口K位置处的侧壁形成至少部分覆盖，此时，气体吸收层4便暴露出多个开口K的部分区域。
例如，气体吸收层4对像素界定层3中位于至少一个开口K位置处的侧壁形成部分覆盖，此时，该气体吸收层4在背板1上的正投影位于像素界定层3在背板1上的正投影范围内。
又例如，气体吸收层4对像素界定层3中位于至少一个开口K位置处的侧壁形成完全覆盖。此时，如图3所示，气体吸收层4在背板1上的正投影与像素界定层3在背板1上的正投影大致重合；或者，如图4所示，像素界定层3在背板1上的正投影位于气体吸收层4在背板1上的正投影范围内。
在此基础上，发光层22与气体吸收层4之间的相对位置关系可以参照上述一些涉及图3和图4的示例进行设置，此处不再进行赘述。
本公开发明人经研究发现，像素界定层3在环境光(例如包括紫外线)的照射下，容易产生氧气(O 2)和/或水蒸气(H 2O)等气体。该气体容易侵蚀上述发光层22，导致发光层22的有效发光面积减小，进而容易导致OLED发光器件2的发光效率降低，影响OLED显示基板的显示效果。而本公开通过在像素界定层3远离背板1的一侧设置气体吸收层4，该气体吸收层4能够对像素界定层3与紫外线作用所产生的气体进行吸收，从而可以有效避免该气体侵蚀发光层22而导致发光器件2的发光效率降低，进而有利于提升显示基板100的显示效果。
在一些示例中，气体吸收层4被环境光照射后，可以产生自由基(例如包括P·)，该自由基可以与O 2和/或H 2O等气体发生反应，对O 2和/或H 2O等气体形成捕获和吸收。
示例性的，自由基和O 2、H 2O发生反应的化学式例如为：
P·+O 2→P+·O 2 -；
P·+H 2O→P+H ++·OH；
由此可见，上述气体吸收层4可以对O 2和/或H 2O等气体形成较好的捕获和吸收，从而有利于避免上述气体侵蚀发光层22而导致发光器件2的发光效率降低，进而可以提升显示基板100的显示效果。
值得说明的是，在发光层22在背板1上的正投影与气体吸收层4在背板1上的正投影之间可以有部分交叠的情况下，可以利用气体吸收层4将发光层22和像素界定层3进行部分隔离，从而可以减小发光层22和像素界定层3之间的接触面积，进而有利于降低像素界定层3所产生的O 2和/或H 2O等气体与发光层22接触并对发光层22造成侵蚀的概率。
由此，本公开一些实施例所提供的显示基板100，通过在像素界定层3远离背板1的一侧设置气体吸收层4，可以利用气体吸收层4因环境光的照射而产生的自由基，对像素界定层3因环境光的照射而产生的O 2和/或H 2O等气体进行捕获和吸收。这样可以利用气体吸收层4对发光层22形成保护，减少甚至避免出现O 2和/或H 2O等气体对发光层22造成侵蚀的情况，减少甚至避免出现发光层22的有效发光面积减小的情况，提高OLED发光器件2的发光效率，提高显示基板100的显示效果。
在一些示例中，气体吸收层4设置在像素界定层3远离背板1的一侧表面上，两者之间可以未设置其他薄膜，而直接接触。
此外，气体吸收层4可以相比于发光层22在先制备形成。
上述气体吸收层4的材料包括多种，可以根据实际需要选择设置。
在一些实施例中，气体吸收层4的材料包括乙烯/丙烯酸甲酯/丙烯酸环己烯基三元共聚物、顺酐酯化合物和二胺四乙酸亚铁盐中的至少一种。
上述气体吸收层4的厚度(也即气体吸收层4在垂直于背板1表面的方向上的尺寸)包括多种，可以根据实际需要选择设置。
在一些实施例中，气体吸收层4的在垂直于背板1表面方向上厚度的取值范围为大约0.05μm～大约0.5μm。示例性的，气体吸收层4的厚度可以为0.045μm、0.05μm、0.055μm、0.1μm、0.13μm、0.18μm、0.2μm、0.3μm、0.44μm、0.45μm、0.5μm或0.55μm等。
通过将气体吸收层4的厚度设置为上述范围，有助于确保显示基板100在受到环境光的照射下，气体吸收层4能够产生较多的或者足够的自由基，对像素界定层3产生的O 2和/或H 2O等气体进行较为充分的捕获和吸收，从而可以确保气体吸收层4对发光层22形成较好的保护效果；而且，还有利于避免因设置气体吸收层4而大幅增大显示基板100的厚度。
在一些实施例中，如图3和图4所示，上述显示基板100还包括：设置在气体吸收层4远离背板1一侧的光线吸收层5。此处，光线吸收层5可以设置在气体吸收层4远离背板1的一侧表面上，两者之间可以未设置其他薄膜，而直接接触。
示例性的，光线吸收层5可以相比于发光层22在先制备形成。
此处，光线吸收层5和气体吸收层4之间的位置关系包括多种，可以根据实际需要选择设置。
在一些示例中，如图3和图4所示，光线吸收层5在背板1上的正投影位于气体吸收层4在背板1上的正投影范围内，也即，光线吸收层5仅覆盖气体吸收层4的一部分。
在此基础上，例如，继续参照图3和图4，光线吸收层5在背板1上的正投影位于像素界定层3在背板1上的正投影范围内，光线吸收层5仅覆盖像素界定层3的一部分；又例如，光线吸收层5在背板1上的正投影与像素界定层3在背板1上的正投影大致重合，光线吸收层5刚好覆盖像素界定层3的全部；再例如，像素界定层3在背板1上的正投影位于光线吸收层5在背板1上的正投影范围内，光线吸收层5完全覆盖像素界定层3。
在另一些示例中，光线吸收层5在背板1上的正投影与气体吸收层4在背板1上的正投影大致重合，也即，光线吸收层5刚好覆盖气体吸收层4的全部。
例如，光线吸收层5在背板1上的正投影可以位于像素界定层3在背板1上的正投影范围内，光线吸收层5仅覆盖像素界定层3的一部分；又例如，光线吸收层5在背板1上的正投影可以与像素界定层3在背板1上的正投影大致重合，光线吸收层5刚好覆盖像素界定层3的全部；再例如，像素界定层3在背板1上的正投影可以位于光线吸收层5在背板1上的正投影范围内，光线吸收层5完全覆盖像素界定层3。
需要说明的是，上述光线吸收层5被配置为，对紫外线进行吸收。这样在显示基板100受到环境光的照射的情况下，可以利用光线吸收层5对其中的紫外线进行吸收，有利于减少甚至消除射向像素界定层3的紫外线，从而 减少像素界定层3产生的O 2和/或H 2O等气体的量，甚至避免像素界定层3产生O 2和/或H 2O等气体，进而有利于减少甚至避免出现O 2和/或H 2O等气体对发光层22造成侵蚀的情况。
此外，在光线吸收层5未对射向像素界定层3的紫外线进行完全的吸收的情况下，还可以利用气体吸收层4产生自由基，对像素界定层3产生的O 2和/或H 2O等气体进行捕获和吸收。
因此，本公开一些实施例所提供的显示基板100可以使得气体吸收层4和光线吸收层5相互配合，既能减少射向像素界定层3的紫外线的量，又能对像素界定层3所产生的O 2和/或H 2O等气体进行捕获和吸收，从而可以共同对发光层22进行保护，有利于减少甚至避免出现O 2和/或H 2O等气体对发光层22造成侵蚀的情况，进而可以提高OLED发光器件2的发光效率，有助于提高显示基板100的显示效果。
在一些示例中，如图3所示，光线吸收层5在背板1上的正投影与发光层22在背板1上的正投影无交叠。示例性的，光线吸收层5在背板1上的正投影与发光层22在背板1上的正投影之间可以相接，或者两者之间具有间距。
这样设置有利于避免发光层22对光线吸收层5形成覆盖，从而可以使得光线吸收层5整体均能够对射向其自身的紫外线进行吸收，有利于提高光线吸收层5对紫外线的吸收效果。
上述光线吸收层5的材料包括多种，可以根据实际需要选择设置。
在一些实施例中，光线吸收层5的材料包括丙烯酸脂预聚物、紫外线吸收剂和二氧化钛中的至少一种。
示例性的，紫外线吸收剂可以包括水杨酸酯类紫外线吸收剂、二苯甲酮类紫外线吸收剂、苯并三唑类紫外线吸收剂、取代丙烯腈类紫外线吸收剂、三嗪类紫外线吸收剂等。
上述光线吸收层5的厚度(也即光线吸收层5在垂直于背板1表面的方向上的尺寸)包括多种，可以根据实际需要选择设置。
在一些实施例中，光线吸收层5在垂直于背板1表面方向上的厚度的取值范围为大约0.05μm～大约0.5μm。示例性的，光线吸收层5的厚度可以为0.045μm、0.05μm、0.055μm、0.09μm、0.13μm、0.18μm、0.2μm、0.3μm、0.45μm、0.5μm或0.55μm等。
通过将光线吸收层5的厚度设置为上述范围，有助于确保显示基板100在受到环境光的照射下，光线吸收层5能够对其中的紫外线进行较为充分的吸收，从而可以减小甚至避免出现其中的紫外线射向像素界定层3的情况， 有利于确保光线吸收层5具有良好的紫外线吸收效果；而且，还有利于避免因设置气体吸收层4而大幅增大显示基板100的厚度。
本公开的一些实施例提供一种显示基板100的制备方法。如图5所示，该显示基板100的制备方法，包括步骤S100～S400。
在步骤S100中，如图9A所示，制备背板1。
示例性的，背板1的结构可以参照上述一些实施例中对背板1的结构的示意性说明，此处不再赘述。
例如，下面以背板1所包括的像素驱动电路12的结构为“2T1C”结构、且其中的驱动晶体管T1和开关晶体管T2采用顶栅型晶体管为例，对制备背板1的过程进行示意性说明。
在一些示例中，如图6所示，在上述步骤S100中，制备背板1包括步骤S110～S160。
在步骤S110中，在衬底11的一侧形成有源薄膜。该有源薄膜包括多个驱动晶体管T1的第一有源层，以及多个开关晶体管T2的第二有源层。
示例性的，可以采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，简称PECVD)工艺形成上述有源薄膜。
在步骤S120中，在有源薄膜远离衬底11的一侧形成栅绝缘层。
示例性的，可以采用PECVD工艺形成该栅绝缘层。
在步骤S130中，在栅绝缘层远离衬底11的一侧形成第一栅导电层。该第一栅导电层包括多个驱动晶体管T1的第一栅极，多个开关晶体管T2的第二栅极，以及多个存储电容C的第一极板。
示例性的，可以采用溅射沉积工艺形成第一栅导电层。
示例性的，第一栅导电层可以采用铜(Cu)、铝(Al)、钼(Mo)、钛(Ti)、铬(Cr)和钨(W)等单质金属材料的其中一种或上述多种金属单质材料中的由至少两种金属单质构成的金属合金材料。
在步骤S140中，在第一栅导电层远离衬底11的一侧形成第二栅导电层。该第二栅导电层包括多个存储电容C的第二极板。每个第二极板与一个第一极板相对设置。
示例性的，可以采用溅射沉积工艺形成第二栅导电层。
示例性的，第二栅导电层可以采用Cu、Al、Mo、Ti、Cr和W等单质金属材料的其中一种或上述多种金属单质材料中的由至少两种金属单质构成的金属合金材料。
在步骤S150中，在第二栅导电层远离衬底11的一侧形成层间介质层。
示例性的，可以采用PECVD工艺形成该层间介质层。
在步骤S160中，在层间介质层远离衬底11的一侧形成源漏导电层。该源漏导电层包括多个驱动晶体管T1的第一源极和第一漏极，多个开关晶体管T2的第二源极和第二漏极。
示例性的，可以采用溅射沉积工艺形成该源漏导电层。
示例性的，源漏导电层可以采用铜(Cu)、铝(Al)等金属材料制备形成。
在一些示例中，在上述步骤S160之后，并在下面的步骤S200之前，还会在源漏导电层远离衬底11的一侧形成平坦层，并在平坦层远离衬底1的一侧形成第一电极层21，第一电极层21包括多个第一电极211。
在步骤S200中，如图10B所示，在背板1的一侧形成像素界定层3。像素界定层3具有多个开口K。
此处，像素界定层3可以位于上述多个第一电极211远离背板1的一侧。
示例性的，可以依次采用涂覆工艺以及固化工艺形成上述像素界定薄膜，然后采用光刻工艺形成上述多个开口K，得到像素界定层3。
上述多个开口K以及多个第一电极211之间的位置关系可以参照上述一些实施例中的示意性说明，此处不再赘述。
在步骤S300中，在像素界定层3远离背板1的一侧形成气体吸收层4，气体吸收层4被配置为吸收像素界定层3与紫外线作用所产生的气体；气体吸收层4暴露出多个开口K的至少部分区域。
示例性的，气体吸收层4在背板1上的正投影位于像素界定层3在背板1上的正投影范围内，例如，气体吸收层4仅覆盖像素界定层3远离背板1一侧且平行于背板1表面的平面部分。此时，气体吸收层4暴露出多个开口K的全部区域。
又示例性的，气体吸收层4在背板1上的正投影与像素界定层3在背板1上的正投影重合。
在一些示例中，如图7所示，在上述步骤S300中，形成气体吸收层4，包括步骤S310a～S340a。
在步骤S310a中，如图9C所示，在像素界定层3远离背板1的一侧依次形成牺牲层6和光刻胶层7。
上述光刻胶层7的材料的类型包括多种，可以根据实际需要选择设置。
例如，上述光刻胶层7的材料包括正性光刻胶。此时，在采用掩膜板对光刻胶层7进行曝光、显影的情况下，所得到的图案与掩膜板的图案相同或 大致相同。
又例如，上述光刻胶层7的材料包括负性光刻胶。此时，在采用掩膜板对光刻胶层7进行曝光、显影的情况下，所得到的图案与掩膜板的图案互补或大致互补。
示例性的，可以采用涂覆工艺形成上述牺牲层6及上述光刻胶层7。
在步骤S320a中，如图9D所示，对牺牲层6和光刻胶层7进行图案化，去除牺牲层6和光刻胶层7覆盖像素界定层3的部分，保留牺牲层6和光刻胶层7位于上述多个开口K内的部分。
示例性的，可以采用光刻工艺对牺牲层6和光刻胶层7进行图案化。
下面，以光刻胶层7的材料包括负性光刻胶为例，上述步骤S320包括：在光刻胶层7远离背板1的一侧设置掩膜板；对光刻胶层7进行曝光，其中，光刻胶层7被曝光的部分为位于上述多个开口K内的部分；然后依次对光刻胶层7进行显影以及对除牺牲层6进行刻蚀，去除牺牲层6和光刻胶层7共同覆盖像素界定层3的部分，保留牺牲层6和光刻胶层7位于上述多个开口K内的部分。
此处，牺牲层6和光刻胶层7位于上述多个开口K内的部分的形状与上述多个开口K的形状相对应。示例性的，每个开口K的形状如图9D所示，牺牲层6和光刻胶层7位于上述多个开口K内的部分的形状则可以为倒梯形。
在一些示例中，对牺牲层6和光刻胶层7进行图案化，去除牺牲层6和光刻胶层7覆盖像素界定层3的部分仅包括牺牲层6和光刻胶层7覆盖像素界定层3远离背板1一侧且平行于背板1表面的平面部分，而不包括牺牲层6和光刻胶层7覆盖像素界定层3位于开口K位置处侧壁的斜面部分。
在另一些示例中，对牺牲层6和光刻胶层7进行图案化，去除牺牲层6和光刻胶层7覆盖像素界定层3的部分同时包括牺牲层6和光刻胶层7覆盖像素界定层3远离背板1一侧且平行于背板1表面的平面部分，以及牺牲层6和光刻胶层7覆盖像素界定层3位于开口K位置处侧壁的斜面部分。此时，对于牺牲层6和光刻胶层7覆盖像素界定层3位于开口K位置处侧壁的斜面部分，可以去除一部分，也可以去除全部。
在步骤S330a中，如图9E所示，在图案化后的光刻胶层71远离背板1的一侧以及像素界定层3远离背板1的一侧依次形成气体吸收薄膜41。
示例性的，可以采用涂覆工艺(例如为旋涂)或喷墨打印(Ink Jet Printing，简称IJP)工艺形成该气体吸收薄膜41。此外，在形成该气体吸收薄膜41之后，还可以采用固化工艺(例如包括高温固化工艺)对该气体吸收薄膜41进 行固化处理，以稳定气体吸收薄膜41的形态。
在步骤S340a中，如图9F所示，对图案化后保留的牺牲层61进行剥离，去除图案化后保留的牺牲层61、图案化后保留的光刻胶层71，以及气体吸收薄膜41中位于上述多个开口K内的部分，得到气体吸收层4。
示例性的，可以采用剥离液对形成有气体吸收薄膜41的待形成显示基板进行清洗，该剥离液可以透过气体吸收薄膜41及图案化后的光刻胶层71，对图案化后的牺牲层61进行剥离，使得图案化后的牺牲层61脱落，并使得图案化后的光刻胶层71以及气体吸收薄膜41中位于上述多个开口K内的部分随着图案化后的牺牲层61的脱落而脱落，从而仅保留气体吸收薄膜41中位于像素界定层3远离背板1的一侧的部分，也便得到了气体吸收层4。
在步骤S400中，如图9G所示，在气体吸收层4远离背板1的一侧形成发光层22。发光层22至少覆盖多个开口K中被气体吸收层4暴露出的区域。
示例性的，可以采用IJP工艺或者蒸镀工艺形成上述发光层22。
本公开的一些实施例所提供的显示基板的制备方法所能实现的有益效果，与上述一些实施例中所提供的显示基板100所能实现的有益效果相同，此处不再赘述。
此外，本公开的一些实施例所提供的显示基板的制备方法，在制备气体吸收层4的过程中，通过采用剥离液对图案化后的牺牲层61进行剥离，即可得到气体吸收层4，工艺简单且容易操作，从而有利于避免加大显示基板100的制备难度。
在一些实施例中，上述显示基板的制备方法还包括：在形成上述发光层22之前，在气体吸收层4远离背板1的一侧形成光线吸收层5。
在一些示例中，气体吸收层4和光线吸收层5在相同的步骤中形成。这样有利于简化显示基板100的制备工艺流程，提高显示基板100的生产效率。
示例性的，如图8所示，形成上述气体吸收层4和光线吸收层5的步骤，包括步骤S310b～S340b。
在步骤S310b中，如图9C所示，在像素界定层4远离背板1的一侧依次形成牺牲层6和光刻胶层7。
在步骤S320b中，如图9D所示，对牺牲层6和光刻胶层7进行图案化，去除牺牲层6和光刻胶层7覆盖像素界定层3的部分，保留牺牲层6和光刻胶层7位于上述多个开口K内的部分。
此处，步骤S310b和步骤S320b可以分别参照对步骤S310a和步骤S320a的示意性说明，此处不再赘述。
在步骤S330b中，如图10A所示，在图案化后的光刻胶层71远离背板1的一侧以及像素界定层3远离背板1的一侧依次形成气体吸收薄膜41和光线吸收薄膜51。
此处，形成气体吸收薄膜41的工艺可以参照上述步骤S330a。
示例性的，在形成气体吸收薄膜41之后，可以采用涂覆工艺(例如为旋涂)或IJP工艺形成该光线吸收薄膜51。此外，在形成该光线吸收薄膜51之后，还可以采用固化工艺(例如包括高温固化工艺)对该光线吸收薄膜51进行固化处理，以稳定光线吸收薄膜51的形态。
需要说明的是，可以在对气体吸收薄膜41进行固化处理之后，再在气体吸收薄膜41远离背板1的一侧形成光线吸收薄膜51。这样可以避免气体吸收薄膜41的材料和光线吸收薄膜51的材料出现混合的现象。
在步骤S340b中，如图10B所示，对图案化后保留的牺牲层61进行剥离，去除图案化后保留的牺牲层61、图案化后保留的光刻胶层71，以及气体吸收薄膜41和光线吸收薄膜51中位于上述多个开口K内的部分，得到气体吸收层4和光线吸收层5。
此处，对图案化后的牺牲层61进行剥离的过程可以参照上述步骤S340a。在图案化后的牺牲层61脱离后，可以使得位于图案化后的牺牲层61远离背板1一侧的图案化后的光刻胶层71、以及气体吸收薄膜41和光线吸收薄膜51中位于上述多个开口K内的部分随之脱落，从而仅保留气体吸收薄膜41和光线吸收薄膜51中位于像素界定层3远离背板1的一侧的部分，也便得到了气体吸收层4和光线吸收层5。
在一些实施例中，以第一电极层21为阳极为例，在上述步骤S400之前，显示基板的制备方法还包括：形成空穴注入层和/或空穴传输层；一个空穴和/或空穴传输层至少部分位于一个开口K内。
示例性的，空穴注入层和/或空穴传输层可以采用蒸镀工艺制备形成。
在一些实施例中，在上述步骤S400之后，显示基板的制备方法还包括：形成电子传输层和/或电子注入层；一个电子传输层和/或电子注入层至少部分位于一个开口K内。
示例性的，电子传输层和/或电子注入层可以采用蒸镀工艺制备形成。
在一些实施例中，在形成电子传输层和/或电子注入层之后，显示基板的制备方法还包括：形成第二电极层23。
示例性的，第二电极层23可以采用蒸镀工艺制备形成。
本公开的一些实施例还提供一种显示装置1000。如图11所示，该显示装 置1000包括上述一些实施例中所述的显示基板100。
本公开的一些实施例所提供的显示装置1000所能实现的有益效果，与上述一些实施例中所提供的显示基板100所能实现的有益效果相同，此处不再赘述。
在一些实施例中，上述显示装置1000可以是显示不论运动(例如，视频)还是固定(例如，静止图像)的且不论文字还是图像的任何装置。更明确地说，预期所述实施例可实施在多种电子装置中或与多种电子装置关联，所述多种电子装置例如(但不限于)移动电话、无线装置、个人数据助理(Personal Digital Assistant，简称PDA)、手持式或便携式计算机、全球定位系统(Global Positioning System，简称GPS)接收器/导航器、相机、动态图像专家组(Moving Picture Experts Group 4，简称MP4)视频播放器、摄像机、游戏控制台、手表、时钟、计算器、电视监视器、计算机监视器、汽车显示器(例如，里程表显示器等)、导航仪、座舱控制器和/或显示器、相机视图的显示器(例如，车辆中后视相机的显示器)、电子相片、电子广告牌或指示牌、投影仪、建筑结构、包装和美学结构(例如，对于一件珠宝的图像的显示器)等。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (16)

  1. 一种显示基板，包括：
    背板；
    设置在所述背板一侧的像素界定层，所述像素界定层具有多个开口；
    设置在所述像素界定层远离所述背板一侧的气体吸收层，所述气体吸收层被配置为吸收像素界定层与紫外线作用所产生的气体；所述气体吸收层暴露出所述多个开口的至少部分区域；以及，
    发光层，至少覆盖所述多个开口中被所述气体吸收层暴露出的区域。
  2. 根据权利要求1所述的显示基板，其中，所述气体吸收层在所述背板上的正投影位于所述像素界定层在所述背板上的正投影范围内。
  3. 根据权利要求1所述的显示基板，其中，所述气体吸收层在所述背板上的正投影与所述像素界定层在所述背板上的正投影大致重合。
  4. 根据权利要求1～3中任一项所述的显示基板，其中，所述气体吸收层的材料包括乙烯/丙烯酸甲酯/丙烯酸环己烯基三元共聚物、顺酐酯化合物和二胺四乙酸亚铁盐中的至少一种。
  5. 根据权利要求1～4中任一项所述的显示基板，其中，所述气体吸收层在垂直于背板表面方向上的厚度的取值范围为大约0.05μm～大约0.5μm。
  6. 根据权利要求1～5中任一项所述的显示基板，其中，所述显示基板还包括：设置在所述气体吸收层远离所述背板一侧的光线吸收层；
    所述光线吸收层在所述背板上的正投影位于所述气体吸收层在所述背板上的正投影范围内，或者，所述光线吸收层在所述背板上的正投影与所述气体吸收层在所述背板上的正投影大致重合。
  7. 根据权利要求6所述的显示基板，其中，所述光线吸收层在所述背板上的正投影与所述发光层在所述背板上的正投影无交叠。
  8. 根据权利要求6或7所述的显示基板，其中，所述光线吸收层的材料包括紫外线吸收剂。
  9. 根据权利要求6～8中任一项所述的显示基板，其中，所述光线吸收层的材料包括丙烯酸脂预聚物和二氧化钛中的至少一种。
  10. 根据权利要求6～9中任一项所述的显示基板，其中，所述光线吸收层在垂直于背板表面方向上的厚度的取值范围为大约0.05μm～大约0.5μm。
  11. 一种显示基板的制备方法，包括：
    制备背板；
    在所述背板的一侧形成像素界定层；所述像素界定层具有多个开口；
    在所述像素界定层远离所述背板的一侧形成气体吸收层，所述气体吸收层被配置为吸收像素界定层与紫外线作用所产生的气体；所述气体吸收层暴露出所述多个开口的至少部分区域；
    在所述气体吸收层远离所述背板的一侧形成发光层，所述发光层至少覆盖所述多个开口中被所述气体吸收层暴露出的区域。
  12. 根据权利要求11所述的显示基板的制备方法，其中，
    所述气体吸收层在所述背板上的正投影位于所述像素界定层在所述背板上的正投影范围内，或者，所述气体吸收层在所述背板上的正投影与所述像素界定层在所述背板上的正投影大致重合。
  13. 根据权利要求11或12所述的显示基板的制备方法，其中，形成所述气体吸收层的步骤，包括：
    在所述像素界定层远离所述背板的一侧依次形成牺牲层和光刻胶层；
    对所述牺牲层和所述光刻胶层进行图案化，去除所述牺牲层和所述光刻胶层覆盖所述像素界定层的部分，保留所述牺牲层和所述光刻胶层位于所述多个开口内的部分；
    在图案化后的光刻胶层远离所述背板的一侧以及所述像素界定层远离所述背板的一侧形成气体吸收薄膜；
    对图案化后保留的牺牲层进行剥离，去除图案化后保留的牺牲层、图案化后保留的光刻胶层，以及所述气体吸收薄膜中位于所述多个开口内的部分，得到所述气体吸收层。
  14. 根据权利要求11或12所述的显示基板的制备方法，其中，所述制备方法还包括：
    在形成所述发光层之前，在所述气体吸收层远离所述背板的一侧形成光线吸收层。
  15. 根据权利要求14所述的显示基板的制备方法，其中，形成所述气体吸收层和所述光线吸收层的步骤，包括：
    在所述像素界定层远离所述背板的一侧依次形成牺牲层和光刻胶层；
    对所述牺牲层和所述光刻胶层进行图案化，去除所述牺牲层和所述光刻胶层覆盖所述像素界定层的部分，保留所述牺牲层和所述光刻胶层位于所述多个开口内的部分；
    在图案化后的光刻胶层远离所述背板的一侧以及所述像素界定层远离所述背板的一侧依次形成气体吸收薄膜和光线吸收薄膜；
    对图案化后保留的牺牲层进行剥离，去除图案化后保留的牺牲层、图案 化后保留的光刻胶层，以及所述气体吸收薄膜和所述光线吸收薄膜中位于所述多个开口内的部分，得到所述气体吸收层和所述光线吸收层。
  16. 一种显示装置，包括：如权利要求1～10中任一项所述的显示基板。
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