WO2021251147A1 - Dispositif électroluminescent à semi-conducteur et procédé de fabrication de dispositif électroluminescent à semi-conducteur - Google Patents

Dispositif électroluminescent à semi-conducteur et procédé de fabrication de dispositif électroluminescent à semi-conducteur Download PDF

Info

Publication number
WO2021251147A1
WO2021251147A1 PCT/JP2021/020081 JP2021020081W WO2021251147A1 WO 2021251147 A1 WO2021251147 A1 WO 2021251147A1 JP 2021020081 W JP2021020081 W JP 2021020081W WO 2021251147 A1 WO2021251147 A1 WO 2021251147A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting device
adhesive
substrate
Prior art date
Application number
PCT/JP2021/020081
Other languages
English (en)
Japanese (ja)
Inventor
忠宏 岡▲崎▼
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to JP2022530122A priority Critical patent/JPWO2021251147A1/ja
Publication of WO2021251147A1 publication Critical patent/WO2021251147A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present disclosure relates to a semiconductor light emitting device in which a reflective case is adhered to a substrate and a method for manufacturing the semiconductor light emitting device.
  • a semiconductor light emitting device in which a reflective case is adhered to a substrate is known.
  • the reflection case used in this type of semiconductor light emitting device reflects a part of the light emitted from the semiconductor light emitting element mounted on the substrate to emit light in a specific direction.
  • the following Patent Document 1 describes an LED module as a semiconductor light emitting device.
  • the LED module includes an LED chip as a semiconductor light emitting element, a substrate on which the LED chip is mounted, and a frame-shaped case that is stacked on the substrate and has a surrounding surface surrounding the LED chip.
  • the substrate is made of, for example, a glass epoxy resin, and the case is made of a polyphthalamide, a liquid crystal polymer, or the like.
  • the inside of the surrounding surface surrounding the LED chip in the case is filled with a sealing resin, and the LED chip is sealed with the sealing resin.
  • the case and the substrate are bonded by an adhesive layer.
  • the entire bottom surface of the case having a surrounding surface surrounding each LED chip is adhered to the main surface of the substrate on which the plurality of LED chips are mounted by an adhesive. It is formed by forming an article and dicing (cutting) this intermediate article.
  • a thermosetting adhesive is used to bond the substrate and the case, it is necessary to heat the substrate and the case in order to cure the adhesive. This heating causes the substrate and case to expand, and after the adhesive has hardened, the substrate and case shrink as the temperature drops.
  • the case made of polyphthalamide or the like has a higher coefficient of thermal expansion than the substrate made of glass epoxy resin or the like. Therefore, after the adhesive is cured, there is a problem that the difference between the shrinkage of the substrate and the shrinkage of the case tends to cause a warp that becomes convex in the direction from the case to the substrate.
  • the purpose of the present disclosure is to suppress the warp of the semiconductor light emitting device in which the reflective case is adhered to the substrate.
  • a semiconductor light emitting device that solves the above problems has a substrate, a semiconductor light emitting device mounted on the substrate, an inner wall surface surrounding the semiconductor light emitting element, and an adhesive surface facing the substrate, and is more than the substrate.
  • a reflective case having a high expansion rate and an adhesive for adhering the substrate and the reflective case are provided, and a recess is formed on the adhesive surface of the reflective case.
  • the method for manufacturing a semiconductor light emitting device that solves the above problems is a method for manufacturing a semiconductor light emitting device that adheres a substrate on which a semiconductor light emitting element is mounted and a reflective case having a higher expansion rate than the substrate with an adhesive.
  • a plurality of reflective case coupling forming steps which have an adhesive surface to which the adhesive comes into contact and a recess formed in the adhesive surface to form a reflective case coupling in which a plurality of the reflective cases are integrally formed.
  • FIG. 1 is a sectional view taken along line 2-2. Back view showing the reflective case.
  • FIG. 4 is a sectional view taken along line 5-5 of FIG.
  • the back view which shows the reflection case as a modification with respect to FIG.
  • FIG. 3 is a cross-sectional view showing a light emitting device connecting body for forming a plurality of semiconductor light emitting devices according to the second embodiment.
  • the semiconductor light emitting device 20 of the first embodiment will be described with reference to FIGS. 1 to 7.
  • the semiconductor light emitting device 20 is formed by cutting the light emitting device coupling 1 shown in FIGS. 1 and 2 in a predetermined region (the region of the alternate long and short dash line in FIG. 1).
  • the X direction in FIG. 1 will be described as forward, the Y direction as left, and the Z direction as upward.
  • the light emitting device coupling body 1 has, for example, a rectangular shape in an XY plane, and includes a plurality of semiconductor light emitting elements 6, a substrate connecting body 3, and a reflective case connecting body 7, as shown in FIGS. 1 and 2. ing.
  • the plurality of semiconductor light emitting elements 6 are, for example, light emitting diodes (LEDs) that emit visible light, and each has a pair of terminals.
  • LEDs light emitting diodes
  • the specific configuration of the semiconductor light emitting device 6 is not limited to the LED and is arbitrary.
  • the substrate connector 3 is, for example, rectangular in the XY plane, and a pair of electrodes 4A and 4B (see FIG. 4) are provided for each region corresponding to each semiconductor light emitting device 6 on the upper surface of the insulating base material.
  • the material of the base material can be, for example, glass epoxy. Glass epoxy is made by impregnating glass fibers with a liquid epoxy resin and performing a thermosetting treatment to form a plate.
  • the substrate connecting body 3 has a predetermined thickness (plate thickness), and the thickness direction of the substrate connecting body 3 is the Z direction.
  • the pair of electrodes 4A and 4B are formed of copper foil or the like and are electrically connected to the wiring (pattern of copper foil or the like) on the upper surface (front surface) and the lower surface (back surface) of the base material.
  • one electrode 4A one terminal of the semiconductor light emitting device 6 is die-bonded by a conductive member such as silver paste.
  • the other electrode 4B is wire-bonded to the other terminal of the semiconductor light emitting device 6 by a thin metal wire 15 such as a gold wire.
  • the reflective case connecting body 7 is, for example, a rectangular frame-shaped member in the XY plane, and is laminated and adhered on the substrate connecting body 3.
  • a white resin is used for the reflective case connecting body 7, and the material has a larger linear expansion coefficient (1 / K. Linear expansion coefficient) in the Y direction than the substrate connecting body 3.
  • polyphthalamide for the reflective case connector 7, for example, polyphthalamide (PPA), liquid crystal polymer (LCP), silicone resin, or the like is used.
  • PPA polyphthalamide
  • LCP liquid crystal polymer
  • silicone resin or the like
  • Polyphthalamide is a nylon-based resin and is a heat-resistant semi-crystalline engineering plastic.
  • the liquid crystal polymer may be, for example, polyester-based, polyester amide, polyazomethin or the like.
  • titanium oxide is added to the resin constituting the reflective case connecting body 7 for light reflection and heat dissipation.
  • a filler such as aluminum nitride or silica may be contained in the reflective case connecting body 7. Due to the anisotropy of the filler, the reflective case connecting body 7 has a direction in which it easily expands and contracts and a direction in which it does not easily expand and contract. In the present embodiment, due to the anisotropy of the filler, the reflective case coupling 7 has larger thermal expansion and contraction in the Y direction (first direction) than in the X direction (second direction).
  • the reflective case coupling 7 is formed with a plurality of rectangular element accommodating portions 8 accommodating each semiconductor light emitting element 6 mounted on the substrate coupling 3.
  • the element accommodating portion 8 of the present embodiment is a hole formed through the reflective case connecting body 7 in the vertical direction and surrounds each semiconductor light emitting element 6.
  • the plurality of element accommodating portions 8 are arranged side by side at intervals in the front-rear and left-right directions.
  • Each element accommodating portion 8 has an inner wall surface 8A whose diameter is expanded toward the upper side, and an opening 8B is formed in the reflective case connecting body 7 by the inner wall surface 8A as shown in FIG.
  • the size of the opening 8B (area of the XY plane) seen from the Z direction increases toward the upper side, that is, as the distance from the substrate 3A increases.
  • the inner wall surface 8A of the element accommodating portion 8 surrounds the semiconductor light emitting element 6. That is, the element accommodating portion 8 forms an accommodating space for accommodating the semiconductor light emitting element 6, and is partitioned by an inner wall surface 8A surrounding the semiconductor light emitting element 6. In this way, the element accommodating unit 8 accommodates the semiconductor light emitting element 6. The light emitted laterally from the semiconductor light emitting device 6 is reflected by the inner wall surface 8A of each element accommodating portion 8 and is irradiated upward.
  • the inner wall surface 8A has a pair of surfaces 8AA, 8AB (FIG. 2) facing each other and a pair of surfaces 8AC, 8AD (FIG. 5) extending in a direction orthogonal to the pair of surfaces 8AA, 8AB and facing each other.
  • the lower surface (bottom surface) of the reflective case connecting body 7 has an adhesive surface 9 that is overlapped with the adhesive 12 in contact with each other.
  • the adhesive surface 9 is formed so as to surround the semiconductor light emitting device 6 when viewed from the Z direction.
  • the lower end of the inner wall surface 8A and the end portion of the adhesive surface 9 near the element accommodating portion 8 are connected to each other.
  • the portion where the lower end of the inner wall surface 8A and the adhesive surface 9 are connected is an acute-angled edge 8E, and the edge 8E is an inner peripheral end of the adhesive surface 9.
  • the edge 8E corresponds to the peripheral edge of the opening 8B formed by the inner wall surface 8A.
  • the adhesive surface 9 has a flat surface 9A and a plurality of slit-shaped recesses 10.
  • a plurality of recesses 10 are arranged side by side at intervals in the left-right direction, and as shown in FIG. 3, extend linearly in the front-rear direction.
  • Each recess 10 is formed in a portion of the adhesive surface 9 other than the peripheral edge of the element accommodating portion 8, and is specifically arranged at a position having a predetermined gap from the element accommodating portion 8 on the adhesive surface 9.
  • the width and depth of each recess 10 are set to dimensions that can reduce the influence of expansion and contraction of the reflective case connecting body 7 when the temperature changes while maintaining a predetermined strength of the reflective case 7A.
  • the adhesive surface 9 is a flat surface along the X direction and the Y direction. Since the X direction and the Y direction are orthogonal to the Z direction, it can be said that "viewed from the Z direction" is “viewed from the direction perpendicular to the adhesive surface 9.” Further, in the present embodiment, the second direction (X direction) is a direction orthogonal to the first direction (Y direction) when viewed from the Z direction.
  • the recesses 10 have a plurality of recesses 10A (first recesses) provided between adjacent element accommodating portions 8 in the front-rear direction (second direction) and left-right directions (second direction).
  • (1 direction) includes a plurality of recesses 10B (second recesses) provided between adjacent element accommodating portions 8.
  • the recess group 10A and the recess group 10B are arranged alternately.
  • the front-rear direction corresponds to the X direction
  • the left-right direction corresponds to the Y direction.
  • each recess group 10A is composed of a plurality of first recesses 11A.
  • the plurality of first recesses 11A are arranged at intervals in the left-right direction while being aligned with each other in the front-rear direction. More specifically, the plurality of first recesses 11A are arranged at equal pitches in the left-right direction. The lengths of the first recesses 11A in the front-rear direction are equal to each other.
  • each recess group 10B is arranged between the element accommodating portions 8 adjacent to each other in the left-right direction.
  • each recess group 10B is composed of a plurality of second recesses 11B.
  • the plurality of second recesses 11B are arranged so as to be aligned with each other in the front-rear direction and spaced apart from each other in the left-right direction. More specifically, the plurality of second recesses 11B are arranged at equal pitches in the left-right direction. In this embodiment, the pitch of the plurality of second recesses 11B is equal to the pitch of the plurality of first recesses 11A.
  • the pitch of the plurality of first recesses 11A and the pitch of the plurality of second recesses 11B can be arbitrarily changed.
  • the pitches of the plurality of first recesses 11A and the pitches of the plurality of second recesses 11B may be different from each other.
  • each second recess 11B in the front-rear direction is longer than the length of each first recess 11A in the front-rear direction.
  • Each recess group 10B is formed so as to straddle a plurality of element accommodating portions 8 when viewed from the left and right directions.
  • each of the second recesses 11B is formed over the entire front-rear direction of the adhesive surface 9.
  • FIG. 3 shows a region 20A in which the reflective case 7A is formed by the alternate long and short dash line.
  • a part of the recess 10 is formed in the region 20A where the reflective case 7A is formed.
  • the plurality of regions 20A are all the same size. More specifically, as shown in FIG. 3, a part of the plurality of recesses 10A is formed in the region 20A where the reflection case 7A is formed.
  • the recess 10 may be formed outside the region where the reflective case 7A is formed. More specifically, as shown in FIG. 6, the plurality of recesses 10A and the plurality of recesses 10B may each be formed outside the region 20A in which the reflection case 7A is formed.
  • the distance between the recesses 10A and the recesses 10B adjacent to each other in the left-right direction is the same as the pitch of the plurality of first recesses 11A (the pitch of the plurality of second recesses 11B). Is.
  • the distance between the recesses 10A and the recesses 10B adjacent to each other in the left-right direction can be reduced by reducing the number of the plurality of first recesses 11A. It may be larger than the pitch of 11A (the pitch of the plurality of second recesses 11B).
  • an adhesive 12 (adhesive layer) is arranged between the substrate connecting body 3 and the reflective case connecting body 7.
  • the adhesive 12 is formed over the entire circumference of the adhesive surface 9 so as to surround each semiconductor light emitting element 6 and each element accommodating portion 8 when viewed from the Z direction.
  • the adhesive 12 is formed on the entire surface of the adhesive surface 9, but the present invention is not limited to this, and the adhesive surface 9 may be provided with a region in which the adhesive 12 is not partially formed.
  • a liquid or film-like adhesive can be used, and for example, an epoxy-based, polyimide-based, or silicone-based adhesive can be used.
  • the adhesive 12 includes a filling portion 12A that penetrates into the recess 10 of the reflective case connector 7.
  • the adhesive 12 has a portion that has entered the recess 10 and a portion that is interposed between the adhesive surface 9 and the substrate 3A.
  • a plurality of semiconductor light emitting devices 20 are formed by cutting the light emitting device coupling body 1 in a predetermined region by, for example, rotation of a circular blade or dicing D (see FIG. 2) by irradiation with a laser beam.
  • the semiconductor light emitting device 20 is overlapped with a substrate 3A cut from the substrate connecting body 3, one semiconductor light emitting element 6 mounted on the substrate 3A, and a reflective case 3A. It is provided with a reflective case 7A cut out from the connecting body 7.
  • the substrate 3A includes electrodes 4A and 4B.
  • the substrate 3A has a predetermined thickness (plate thickness), and the thickness direction of the substrate 3A is the Z direction.
  • the substrate 3A and the reflective case 7A are bonded with an adhesive 12.
  • the reflective case 7A is provided with an element accommodating portion 8 having an inner wall surface 8A, an adhesive surface 9, and a recess 10 recessed with respect to the adhesive surface 9. These configurations have already been described.
  • the element accommodating portion 8 of the reflective case 7A is filled with a sealing resin 13 that transmits light.
  • the sealing resin 13 is a transparent or translucent resin material having transparency to the light emitted by the semiconductor light emitting element 6, and is, for example, an epoxy resin, a silicone resin, an acrylic resin, a polyvinyl resin, or the like.
  • the encapsulating resin 13 is a diffuser that diffuses light from the semiconductor light emitting element 6, a phosphor that is excited by the light from the semiconductor light emitting element 6 and emits light having a wavelength different from the wavelength of the light from the semiconductor light emitting element 6, and the like. May be included.
  • the method for manufacturing the semiconductor light emitting device 20 includes, for example, a reflection case connecting body forming step, an bonding step, and a cutting step. Further, the manufacturing method of the semiconductor light emitting device 20 includes a semiconductor light emitting element mounting process. In this embodiment, the semiconductor light emitting device mounting step, the reflective case connecting body forming step, the bonding step, and the cutting step are carried out in this order. Hereinafter, details of each step will be described.
  • Each terminal of the plurality of semiconductor light emitting elements 6 is bonded to the corresponding electrodes 4A and 4B with respect to the substrate connector 3 in which the plurality of substrates 3A are integrally connected.
  • a resin such as polyphthalamide is injected into a mold (not shown), the resin is cured, and then the resin is taken out from the mold.
  • a convex portion for forming the concave portion 10 of the reflective case 7A is formed in the mold.
  • the recess 10 is formed when the reflective case connecting body 7 in which the plurality of reflective cases 7A are integrally connected is formed.
  • the formation of the concave portion 10 is not limited to this, and the concave portion 10 may be formed by irradiating the adhesive surface 9 with a laser beam after forming the reflective case connecting body 7.
  • the adhesive 12 is applied to the lower surface (adhesive surface 9) of the reflective case connecting body 7.
  • the adhesive 12 is applied to the region where the reflective case connecting body 7 overlaps (the region other than each element accommodating portion 8).
  • the lower surface of the reflective case connecting body 7 and the upper surface of the substrate connecting body 3 are bonded together with the adhesive 12 sandwiched between them (FIG. 1).
  • the adhesive 12 enters the concave portion 10 of the reflective case connecting body 7, and the filling portion 12A of the adhesive 12 is filled in the concave portion 10 (FIG. 2).
  • the light emitting device connecting body 1 is heated to a predetermined temperature, and the adhesive 12 is thermoset. After that, when the liquid sealing resin 13 is injected into each element accommodating portion 8 of the reflective case coupling 7 and cured, the semiconductor light emitting element 6 in the element accommodating portion 8 is covered with the encapsulating resin 13. Become.
  • the concave portion 10 of the reflective case connector 7 makes the reflective case connector 7 flat.
  • the area of the adhesive surface 9 is smaller than that in the case where the recess 10 is not provided.
  • the semiconductor light emitting device 20 has a substrate 3A, a semiconductor light emitting element 6 mounted on the substrate 3A, an inner wall surface 8A surrounding the semiconductor light emitting element 6, and an adhesive surface 9 facing the substrate 3A.
  • a reflective case 7A having a higher expansion rate than 3A and an adhesive 12 for adhering the substrate 3A and the reflective case 7A are provided, and a recess 10 is formed on the adhesive surface 9 of the reflective case 7A.
  • the concave portion 10 is formed on the adhesive surface 9 in contact with the adhesive 12 in the reflective case 7A, the area of the region where the expansion and contraction of the reflective case 7A near the adhesive surface 9 occurs is the concave portion. It is reduced by 10 minutes. As a result, the influence of the shrinkage of the reflective case 7A, which has a higher expansion rate than the substrate 3A, on the substrate 3A and the adhesive 12 is suppressed. Therefore, the substrate 3A and the reflective case 7A are expanded and contracted from the reflective case 7A to the substrate. It is possible to suppress the warp that becomes convex in the direction toward 3A.
  • the recess 10 extends in a slit shape on the adhesive surface 9. In this way, the slit-shaped recess 10 can suppress the influence of expansion and contraction of the reflective case 7A in the direction in which the recess 10 intersects the extending direction. Further, the recess 10 can be easily formed in the reflective case 7A.
  • the expansion coefficient in the first direction (Y direction) along the adhesive surface 9 is the second direction (X direction) along the adhesive surface 9 and orthogonal to the first direction. It is larger than the coefficient of expansion to, and the recess 10 extends in the second direction.
  • the reflective case 7A contains a filler, and the expansion coefficient in the first direction is larger than the expansion rate in the second direction due to the anisotropy of the filler.
  • the concave portion 10 expands the reflective case 7A in the first direction. , The influence of shrinkage can be suppressed.
  • the second direction (X direction) is a direction orthogonal to the first direction (Y direction).
  • At least a part of the adhesive 12 is contained in the recess 10.
  • the adhesive 12 in the recess 10 increases the adhesive area between the adhesive 12 and the reflective case 7A, so that the adhesive strength between the substrate 3A and the reflective case 7A can be increased.
  • the periphery of the opening 8B formed by the inner wall surface 8A of the adhesive surface 9 is in contact with the adhesive 12 over the entire circumference. By doing so, it is possible to increase the adhesive strength between the substrate 3A and the reflective case 7A around the opening 8B formed by the inner wall surface 8A of the adhesive surface 9.
  • the recess 10 is formed in a portion of the adhesive surface 9 other than the peripheral portion of the opening 8B formed by the inner wall surface 8A. By doing so, it is possible to suppress a decrease in adhesive strength due to the formation of the recess 10 in the peripheral edge portion of the opening 8B formed by the inner wall surface 8A.
  • the method for manufacturing the semiconductor light emitting device 20 is a method for manufacturing the semiconductor light emitting device 20 in which the substrate 3A on which the semiconductor light emitting element 6 is mounted and the reflective case 7A having a higher expansion rate than the substrate 3A are bonded with an adhesive 12.
  • a reflective case connector having an adhesive surface 9 with which the adhesive 12 comes into contact and a recess 10 formed in the adhesive surface 9 to form a reflective case connector 7 in which a plurality of reflective cases 7A are integrally formed.
  • a cutting step of forming the reflective case 7A and the substrate 3A to which the adhesive 12 is adhered by cutting the body 7 and the substrate connecting body 3 is provided.
  • the concave portion 10 is formed on the adhesive surface 9 in contact with the adhesive 12 in the reflective case connecting body 7 formed in the reflective case connecting body forming step. Therefore, the area of the region where the expansion and contraction of the reflective case connecting body 7 bonded to the substrate connecting body 3 in the bonding step near the bonding surface 9 occurs is reduced by the amount of the recess 10. As a result, the influence on the substrate 3A and the adhesive 12 due to the shrinkage of the reflective case coupling 7 having a higher expansion coefficient than the substrate coupling 3 is suppressed. Therefore, with respect to the substrate 3A and the reflective case 7A, it is possible to suppress the warp that becomes convex in the direction from the reflective case 7A to the substrate 3A after expansion and contraction.
  • the second embodiment will be described with reference to FIG.
  • the inner wall surface 8A of the element accommodating portion 8 of the reflection case 7A of the first embodiment has an enlarged diameter upward, but the inner wall surface 31A of the element accommodating portion 31 of the reflection case 30A of the second embodiment is as shown in FIG.
  • the cross section of the XY plane orthogonal to the Z direction has the same shape for the entire length in the Z direction (axial direction of the element accommodating portion 31).
  • the same configurations as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
  • the element accommodating portion 31 has a rectangular through hole and has a constant shape and size in the Z direction.
  • the inner wall surface 31A of the element accommodating portion 31 has an angle orthogonal to the upper surface (plate surface) of the substrate 3A.
  • the extending direction of the recess 10 of each of the above embodiments is a second direction (X direction) orthogonal to the first direction (Y direction) in which expansion and contraction of the reflective case 7A are likely to occur.
  • the extending direction of the recess 10 may be such that the intersecting direction other than orthogonal to the first direction (Y direction) is the second direction, and the recess extends in this second direction.
  • the recess 10 of each of the above embodiments has a shape that extends linearly in a slit shape, but the present invention is not limited to this.
  • it may be a circular shape, a polygonal shape, or a concave portion extending in a curved shape.
  • the shape in the cross-sectional view obtained by cutting the recess 10 in a plane along the Z direction and the extending direction of the recess 10 (X direction in each embodiment) is not limited to a rectangular shape and can be arbitrarily changed. ..
  • the shape of the recess 10 in the cross-sectional view may be V-shaped, semicircular, polygonal, or the like.
  • a part of the recesses 10A may be omitted from the plurality of recesses 10A arranged apart from each other in the front-rear direction. -In each of the above embodiments, a part of the recesses 10A may be omitted from the plurality of recesses 10A arranged apart from each other in the left-right direction.
  • a part of the recesses 10B may be omitted from the plurality of recesses 10B arranged apart from each other in the left-right direction.
  • one of the plurality of recesses 10A and the plurality of recesses 10B may be omitted.
  • a part of the second recess 11B of the plurality of recess groups 10B may be formed in the region of the reflective case connecting body 7 where the reflective case 7A is formed.
  • the plurality of second recesses 11B of the plurality of recesses 10B may be arranged apart from each other in the front-rear direction. In this case, the lengths of the plurality of second recesses 11B in the front-rear direction can be arbitrarily changed.
  • the adhesive 12 is configured to be filled in the recess 10, but the present invention is not limited to this, and a gap may be formed in the recess 10 in which the adhesive 12 is not contained.
  • the recess 10 is configured to suppress expansion and contraction of the reflective cases 7A and 30A during thermal curing of the adhesive, but the present invention is not limited to this.
  • the recess 10 may be used to suppress expansion and contraction of the sealing resin 13 during heating.

Abstract

La présente invention concerne un dispositif électroluminescent à semi-conducteur (20) qui comprend : un substrat (3A); un élément électroluminescent à semi-conducteur (6) monté sur le substrat (3A); un boîtier réfléchissant (7A) ayant une surface de paroi interne (8A) entourant l'élément électroluminescent à semi-conducteur (6) et une surface adhésive (9) opposée au substrat (3A), le boîtier réfléchissant (7A) ayant un taux d'expansion supérieur à celui du substrat (3A); et un agent adhésif (12) collant le substrat (3A) et le boîtier réfléchissant (7A) l'un à l'autre. La surface adhésive (9) du boîtier réfléchissant présente un évidement (10) formé en son sein.
PCT/JP2021/020081 2020-06-09 2021-05-26 Dispositif électroluminescent à semi-conducteur et procédé de fabrication de dispositif électroluminescent à semi-conducteur WO2021251147A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022530122A JPWO2021251147A1 (fr) 2020-06-09 2021-05-26

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-100136 2020-06-09
JP2020100136 2020-06-09

Publications (1)

Publication Number Publication Date
WO2021251147A1 true WO2021251147A1 (fr) 2021-12-16

Family

ID=78846008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/020081 WO2021251147A1 (fr) 2020-06-09 2021-05-26 Dispositif électroluminescent à semi-conducteur et procédé de fabrication de dispositif électroluminescent à semi-conducteur

Country Status (2)

Country Link
JP (1) JPWO2021251147A1 (fr)
WO (1) WO2021251147A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173271A (ja) * 2005-12-19 2007-07-05 Sumitomo Metal Electronics Devices Inc 発光素子収納用パッケージ
JP2009038215A (ja) * 2007-08-01 2009-02-19 Nippon Carbide Ind Co Inc 発光素子収納用パッケージおよび発光装置
JP2013026510A (ja) * 2011-07-22 2013-02-04 Rohm Co Ltd Ｌｅｄモジュールおよびｌｅｄモジュールの実装構造
JP2013172154A (ja) * 2012-02-21 2013-09-02 Lg Innotek Co Ltd 発光素子、発光素子製造方法、及びこれを備えた照明システム
JP2016122823A (ja) * 2014-12-25 2016-07-07 日亜化学工業株式会社 パッケージ、発光装置及びそれらの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173271A (ja) * 2005-12-19 2007-07-05 Sumitomo Metal Electronics Devices Inc 発光素子収納用パッケージ
JP2009038215A (ja) * 2007-08-01 2009-02-19 Nippon Carbide Ind Co Inc 発光素子収納用パッケージおよび発光装置
JP2013026510A (ja) * 2011-07-22 2013-02-04 Rohm Co Ltd Ｌｅｄモジュールおよびｌｅｄモジュールの実装構造
JP2013172154A (ja) * 2012-02-21 2013-09-02 Lg Innotek Co Ltd 発光素子、発光素子製造方法、及びこれを備えた照明システム
JP2016122823A (ja) * 2014-12-25 2016-07-07 日亜化学工業株式会社 パッケージ、発光装置及びそれらの製造方法

Also Published As

Publication number Publication date
JPWO2021251147A1 (fr) 2021-12-16

Similar Documents

Publication Publication Date Title
JP5396215B2 (ja) 半導体発光装置の製造方法、半導体発光装置および液晶表示装置
JP5302117B2 (ja) 発光装置の製造方法、発光装置および発光装置搭載用基板
JP6564206B2 (ja) 発光装置
KR102129647B1 (ko) 광전자 조명 모듈, 광전자 조명 장치 및 차량 헤드램프
JP5277085B2 (ja) 発光装置及び発光装置の製造方法
JP5405731B2 (ja) 光源モジュール
USRE42112E1 (en) Chip light emitting diode and fabrication method thereof
US9653670B2 (en) Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component
JP2002094122A (ja) 光源装置及びその製造方法
KR20090003378A (ko) 발광 다이오드 패키지
JP5940799B2 (ja) 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
KR20130058721A (ko) 표면 장착 가능한 광전자 소자 그리고 표면 장착 가능한 광전자 소자를 제조하기 위한 방법
WO2017209149A1 (fr) Dispositif électroluminescent
US20160190397A1 (en) Led package structure and the manufacturing method of the same
JP2008103401A (ja) 上下電極型発光ダイオード用パッケージおよび上下電極型発光ダイオード用パッケージの製造方法
JP2014060343A (ja) 発光ダイオードの製造方法、発光ダイオード
JP2009080978A (ja) 照明装置
WO2021251147A1 (fr) Dispositif électroluminescent à semi-conducteur et procédé de fabrication de dispositif électroluminescent à semi-conducteur
TW201344994A (zh) 鑄於基材上具有密封凹槽的半導體雷射晶片封裝及其形成方法
KR100809816B1 (ko) 리드프레임, 그를 이용한 발광 소자 패키지 및 그의 제조방법
JP5227135B2 (ja) 半導体発光装置およびその製造方法
JP6447580B2 (ja) 発光装置
JP6322334B2 (ja) オプトエレクトロニクス部品の製造方法およびオプトエレクトロニクス部品
TW201637162A (zh) 導線架及製造晶片封裝體的方法以及製造光電組件的方法
CN111025441B (zh) 光学配件、其制造方法、以及发光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21821611

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022530122

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21821611

Country of ref document: EP

Kind code of ref document: A1