WO2021227762A1 - Spreader plate and electrochemical deposition device - Google Patents

Spreader plate and electrochemical deposition device Download PDF

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Publication number
WO2021227762A1
WO2021227762A1 PCT/CN2021/087394 CN2021087394W WO2021227762A1 WO 2021227762 A1 WO2021227762 A1 WO 2021227762A1 CN 2021087394 W CN2021087394 W CN 2021087394W WO 2021227762 A1 WO2021227762 A1 WO 2021227762A1
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WO
WIPO (PCT)
Prior art keywords
liquid
wall
cavity
outlets
liquid return
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PCT/CN2021/087394
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French (fr)
Chinese (zh)
Inventor
闫俊伟
袁广才
张国才
孙少东
董士豪
王成飞
Original Assignee
京东方科技集团股份有限公司
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Publication of WO2021227762A1 publication Critical patent/WO2021227762A1/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02Tanks; Installations therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/06Filtering particles other than ions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08Electroplating with moving electrolyte e.g. jet electroplating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54Electroplating of non-metallic surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks

Definitions

  • the present disclosure relates to the field of production of display products, and in particular to a shunt plate and electrochemical deposition equipment.
  • the electrochemical deposition process is a low-cost chemical film forming method, which can deposit a metal layer with a thickness of 2-20um with a relatively low resistance value.
  • the current electrochemical deposition equipment is generally suitable for electrochemical deposition on glass substrates with a small size, while for glass substrates with a larger size, the problem of uneven film formation is prone to occur.
  • the present disclosure provides a shunt plate used in an electrochemical deposition device, the shunt plate comprising:
  • the containing housing includes: a first wall, a second wall disposed opposite to the first wall, and a plurality of side walls connected between the first wall and the second wall, so The first wall, the second wall and the plurality of side walls enclose a containing cavity, the containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of The liquid outlets are all in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall;
  • a plurality of liquid return pipelines the plurality of liquid return pipelines pass through the containing cavity, the inlets of the plurality of liquid return pipelines are arranged on the first wall, and the plurality of liquid return pipelines The outlet is provided on the second wall.
  • the calibers of the plurality of liquid outlets are the same, and the inner diameters of the plurality of liquid return pipelines are the same; the plurality of liquid outlets are evenly distributed, and the plurality of liquid return pipelines are evenly distributed.
  • the distribution plate is divided into a plurality of partitions, and each of the partitions is provided with a plurality of the liquid return pipelines and a plurality of the liquid outlets evenly distributed,
  • the diameters of the liquid outlets in different zones are different, and the inner diameters of the liquid return pipes in different zones are different; and/or,
  • the distribution density of liquid outlets in different zones is different, and the distribution density of liquid return pipes in different zones is different.
  • the diameter of the liquid outlet is smaller than the inner diameter of the liquid return pipeline.
  • the inner diameter of the liquid return pipeline is 30-60 times the caliber of the liquid outlet.
  • the plurality of partitions includes a middle section located in the middle of the splitter plate and at least one ring-shaped section surrounding the middle section,
  • the caliber of the liquid outlet of the middle section is smaller than the caliber of the liquid outlet of the annular zone, and the inner diameter of the liquid return pipeline of the middle zone is smaller than the inner diameter of the liquid return pipeline of the annular zone; and / or,
  • the distribution density of the liquid outlets of the middle section is greater than the distribution density of the liquid outlets of the annular section, and the distribution density of the liquid return pipes in the middle section is greater than the liquid return pipes of the annular section The distribution density.
  • the diameter of the liquid outlet of the middle section is 0.2 to 0.5 times the diameter of the liquid outlet of the annular section
  • the inner diameter of the liquid return pipeline of the middle section is the 0.3 to 0.6 times the inner diameter of the liquid return pipe of the annular zone.
  • the size of the middle region in the first direction is 1 to 3 times the size of the ring-shaped partition in the first direction, and the size of the middle region in the second direction is the same.
  • the size of the ring-shaped partition along the second direction is 1 to 3 times.
  • a partition wall is provided in the accommodating cavity, and the partition wall divides the accommodating cavity into a plurality of accommodating subcavities that are not connected to each other, and each accommodating subcavity is connected to at least one of the accommodating subcavities.
  • the liquid inlet is communicated with a plurality of evenly distributed liquid outlets.
  • the liquid inlet is arranged on the side wall of the containing shell
  • the flow dividing plate further includes at least one uniform flow baffle arranged in the containing cavity, the uniform flow baffle
  • the accommodating cavity is divided into a main cavity and at least one pressure equalization cavity, the liquid inlet is in communication with the pressure equalization cavity, the liquid outlet is in communication with the main cavity, and the liquid return pipeline passes through the In the main cavity
  • the uniform flow baffle is provided with a plurality of uniformly distributed through holes, and the pressure equalization cavity is communicated with the main cavity through the through holes on the uniform flow baffle.
  • the plurality of side walls includes a first side wall and a second side wall opposite to each other, the first side wall and the second side wall are both provided with the liquid inlet, the In the accommodating cavity near the first side wall and the second side wall, two uniform flow baffles are provided to separate the accommodating cavity into one main cavity and four sub-cavities.
  • the pressure equalizing cavity
  • the diameter of the through hole on the uniform flow baffle near the liquid inlet is larger than the diameter of the through hole on the uniform flow baffle far away from the liquid inlet.
  • the distribution density of the through holes on the uniform flow baffle is smaller than the distribution density of the through holes on the uniform flow baffle far from the liquid inlet.
  • each of the return holes is provided with a plurality of liquid outlets adjacent to it.
  • the plurality of liquid outlets around the liquid return pipe are The center line forms a quadrilateral, pentagon or hexagon.
  • the embodiments of the present disclosure also provide an electrochemical deposition device, including: a receiving tank, an electrode structure, a shunt plate, and a substrate carrier, the shunt plate is the shunt plate provided in the above embodiment, and the substrate carrier is used for loading For the substrate to be electroplated, the electrode structure and the shunt plate are arranged in the receiving groove, the shunt plate is arranged on the side of the electrode structure facing the substrate, and the first wall is located at the second The side of the wall away from the anode structure.
  • Fig. 1a is a perspective view of a partial structure of an electrochemical deposition device in which a splitter plate provided in some embodiments of the present disclosure is located;
  • Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure
  • Fig. 2 is a front view of a manifold provided in some embodiments of the present disclosure
  • Figure 3 is one of the cross-sectional views taken along line B-B in Figure 1b;
  • Figure 4 is a cross-sectional view taken along the line I-I in Figure 2;
  • Fig. 5 is a partial schematic diagram of the P area in Fig. 2;
  • Figure 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline
  • Figure 7 is the second cross-sectional view taken along line B-B in Figure 1b;
  • Figure 8 is the third cross-sectional view taken along line B-B in Figure 1b;
  • FIG. 9 is a perspective view of a splitter plate provided in some other embodiments of the present disclosure.
  • FIG. 10 is a front view of a splitter plate provided in some other embodiments of the present disclosure.
  • Figure 11 is one of the cross-sectional views taken along line C-C in Figure 9;
  • Figure 12 is a cross-sectional view taken along line J-J in Figure 10;
  • Figure 13 is one of the cross-sectional views taken along line C-C in Figure 9;
  • FIG. 14 is a schematic diagram of the overall structure of an electrochemical deposition device provided in some embodiments of the present disclosure.
  • FIG. 15 is a schematic diagram of a part of the structure of the electrochemical deposition apparatus shown in FIG. 14.
  • FIG. 1a is a perspective view of the electrochemical deposition equipment where the shunt plate provided in some embodiments of the present disclosure is located.
  • the electrochemical deposition The equipment includes: a tank body 100 with a receiving groove, an electrode structure 200, a shunt plate 300, and a substrate carrier 400.
  • the substrate carrier 400 is used to load the substrate 500 to be electroplated.
  • the electrode structure 200 and the shunt plate 300 are arranged in the receiving groove.
  • the shunt plate 300 is disposed on the side of the electrode structure 200 facing the substrate 500.
  • Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure
  • Fig. 2 is a front view of a shunt plate provided in some embodiments of the present disclosure
  • Fig. 3 is one of the cross-sectional views along the line BB in Fig. 1b
  • 4 is a cross-sectional view taken along the line II in FIG. 2, as shown in FIG. 1 b to FIG. 4, the flow dividing plate includes: an accommodating housing 10 and a plurality of liquid return pipes 20.
  • the containing housing 10 includes: a first wall 11, a second wall 12 disposed opposite to the first wall 11, and a plurality of side walls 13 connected between the first wall 11 and the second wall 12, the first wall 11 , The second wall 12 and the plurality of side walls 13 enclose a containing cavity, and the containing housing 10 is provided with a liquid inlet 14 and a plurality of liquid outlets 15.
  • the liquid inlet 14 and the liquid outlet 15 are both in communication with the containing cavity,
  • the liquid outlet 15 is provided on the first wall 11.
  • the liquid return pipeline 20 passes through the containing cavity, the inlet of the liquid return pipeline 20 is arranged on the first wall 11, and the outlet of the liquid return pipeline 20 is arranged on the second wall 12, that is, the liquid return pipeline 20 has a through hole.
  • the form is set on the containing shell.
  • the electrode structure 200, the substrate to be electroplated and the shunt plate are all set in the containing tank, the electrode structure 200 is connected to the anode of the power supply device, and the substrate carrier 400 is connected to the cathode of the power supply device, so that the electrode structure 200 is connected to the cathode of the power supply device.
  • An electric field is formed between the substrate 500 and the substrate 500.
  • the electroplating solution is introduced into the containing cavity from the liquid inlet 14 of the manifold and is output from the liquid outlet 15.
  • the liquid return port is used to allow the electroplating liquid on both sides of the manifold to pass through the manifold to circulate.
  • the metal ions in the electroplating solution are deposited on the substrate to form a metal film layer. Since the electroplating solution is output from the liquid outlet 15, when the electrochemical deposition process is performed on a large-sized substrate, the distribution position of the liquid outlet 15 and the size of the liquid outlet 15 can be adjusted to improve the deposition on the substrate. The film thickness uniformity.
  • the liquid outlets 15 are evenly distributed, and the multiple liquid return pipes 20 are evenly distributed.
  • the diameters of the multiple liquid outlets 15 are the same.
  • the inner diameter is also the same, so that the flow rate of the electroplating solution output from different positions is the same, and in the case of a uniform electric field, the uniformity of the deposited film on the substrate is improved.
  • FIG. 5 is a partial schematic diagram of the P area in FIG. 2. As shown in FIG. In other words, the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a hexagon. Of course, the liquid outlets 15 can also be distributed in other ways.
  • FIG. 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline. As shown in FIG. 6, there are multiple liquid outlets around the liquid return pipeline 20. The central line of 15 can also form a pentagon or a quadrilateral.
  • the center connection of the plurality of liquid outlets 15 around the liquid return pipeline 20 forms a polygon such as a quadrilateral, pentagon or hexagon
  • the center of the inlet of the liquid return pipeline is located at the center of the polygon, thus,
  • the shunt plate is placed in the containing tank for electrochemical deposition, the distribution of metal ions in the electroplating solution on the side of the polygon is more uniform, so that the distribution of the film deposited on the substrate and the area corresponding to the polygon is more uniform.
  • the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20.
  • the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15 so that a larger number of liquid outlets 15 can be provided, thereby improving the uniformity of the thickness of the film deposited on the substrate.
  • the liquid inlet 14 is arranged on the side wall of the containing housing 10, and the distribution plate further includes at least one uniform flow baffle 30 arranged in the containing cavity, and the uniform flow baffle 30 will accommodate
  • the chamber is divided into a main chamber S1 and at least one pressure equalizing chamber S2, the liquid inlet 14 is connected to the equalizing chamber S2, the liquid outlet 15 is connected to the main chamber S1, the liquid return pipeline 20 passes through the main chamber, and the uniform flow baffle 30
  • a plurality of evenly distributed through holes V are arranged on the upper part, and the pressure equalization cavity S2 and the main cavity S1 are communicated through the through holes V on the uniform flow baffle.
  • the liquid pressure near the liquid inlet 14 (position A in FIG. 3) is relatively high, and the liquid pressure at a position far away from the liquid inlet 14 (position a in FIG. 3) is relatively high. small.
  • the pressure distribution of the electroplating solution can be made more uniform.
  • the number of the liquid inlet 14 is multiple, and the multiple side walls of the distribution plate include a first side wall 131 and a second side wall 132 opposite to each other.
  • the first side wall 131 and the second side wall 132 are Both are provided with a liquid inlet 14.
  • the first side wall 131 and the second side wall 132 are each provided with three liquid inlets 14.
  • FIG. 7 is the second cross-sectional view taken along line BB in FIG. 1b. As shown in FIG. 7, in other embodiments, two even positions are provided in the accommodating cavity near the first side wall 131 and the second side wall 132.
  • the flow baffle plate 30 thus divides the containing chamber into a main chamber S1 and four pressure equalizing chambers S2. Wherein, on the same side of the main chamber S1 (upper side or lower side in FIG.
  • the diameter of the through hole V on the uniform flow baffle near the liquid inlet 14 is larger than that of the uniform flow baffle 30 far away from the liquid inlet 14
  • the diameter of the upper through holes V, the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 is smaller than the distribution density of the through holes V on the uniform flow baffle 30 far away from the liquid inlet 14.
  • the uniform flow baffle 30 in FIG. 7 can also be set to other numbers. It only needs to be on the same side of the main chamber S1.
  • the diameter of the through holes V on the uniform flow baffle 30 of the liquid inlet 14 and the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 are smaller than those on the uniform flow baffle 30 far away from the liquid inlet 14 The distribution density of the through holes V is sufficient.
  • the aperture V of the through hole V on the uniform flow baffle close to the liquid inlet 14 is 1.5 to 4 times the aperture of the through hole V on the uniform flow baffle 30 far from the liquid inlet 14; in addition, the aperture near the liquid inlet 14
  • the distance between two adjacent through holes V on the uniform flow baffle 30 is d1
  • the distance between two adjacent through holes V on the uniform flow baffle 30 far away from the liquid inlet 14 is d2, where, d1 is 2 to 4 times of d2, and the distance between two adjacent through holes V is the shortest distance between two through holes V.
  • Fig. 8 is the third cross-sectional view taken along line B-B in Fig. 1b.
  • the shunt plate shown in Fig. 8 has a similar structure to the shunt plate shown in Fig. 3, and only the difference between the two structures will be described below.
  • a partition wall 40 is provided in the accommodating cavity, and the partition wall 40 divides the accommodating cavity into a plurality of accommodating sub-cavities that are not connected to each other (for example, the two partition walls 40 in FIG. 8 divide the accommodating cavity into three Each containing sub-cavity), each containing sub-cavity is connected with at least one liquid inlet 14 and a plurality of liquid outlets 15 evenly distributed.
  • the liquid intake of the containing subcavity corresponding to the area can be increased, thereby improving the uniformity of the deposited film on the substrate.
  • two partition walls 40 divide the accommodating cavity into three accommodating subcavities on the left, center, and right.
  • the accommodating subcavity in the middle includes: a first main cavity portion Sa1 and two The second main cavity Sa2.
  • the first main cavity portion Sa1 is a rectangular cavity
  • the first main cavity portion Sa1 is a part of the main cavity S1 and covers at least the center of the manifold
  • a portion of the second main cavity portion Sa2 is a part of the main cavity S1
  • the second main cavity portion Sa2 is a part of the main cavity S1.
  • the other part of the main chamber Sa2 is a part of the equalizing chamber S2.
  • the length of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1
  • the width of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1.
  • Figure 9 is a perspective view of a manifold provided in other embodiments of the present disclosure
  • Figure 10 is a front view of a manifold provided in other embodiments of the present disclosure
  • Figure 11 is one of the cross-sectional views along line CC in Figure 9
  • Figure 12 is a cross-sectional view along line JJ in Figure 10.
  • the manifold shown in Figure 9 has a similar structure to the manifold shown in Figure 1b, and also includes a containing housing 10 and a plurality of liquid return pipes 20.
  • the containing housing 10 is provided with The plurality of liquid inlets 14 and the plurality of liquid outlets 15 further include a uniform flow baffle 30 with through holes. Only the difference between the two structures will be described below.
  • the manifold is divided into a plurality of partitions A1 and A2, and each partition A1/A2 is provided with a plurality of evenly distributed return lines 20 and a plurality of evenly distributed outlets.
  • the liquid port 15 has different calibers of the liquid outlet 15 in different zones, and the inner diameter of the liquid return pipe 20 in different zones is different.
  • the diameters of the liquid outlets 15 in different zones are different, the speeds of the electroplating solution sprayed from the liquid outlets 15 in different zones are different.
  • the diameter of the liquid outlet 15 in the partition corresponding to the position with larger electric field intensity can be set to be smaller, and the diameter of the liquid outlet 15 in the partition corresponding to the position with lower electric field strength can be set to be smaller.
  • the aperture is set to be larger, so that the thickness of the film deposited at different positions on the substrate is more uniform.
  • the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20.
  • the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15.
  • tip discharge may occur at the edge of the electrode structure, resulting in a larger electric field intensity in the edge area of the electrode structure and a smaller electric field intensity in the middle area, which in turn leads to a thicker film deposited in the middle area of the substrate. Smaller, the thickness of the film deposited on the edge area of the substrate is larger.
  • the multiple partitions of the manifold include a middle section A1 and at least one annular section A2 surrounding the middle section A1, wherein the liquid outlet of the middle section A1
  • the caliber of 15 is smaller than the caliber of the liquid outlet 15 of the annular zone A2
  • the caliber of the liquid return port of the middle section A1 is smaller than the caliber of the liquid return hole of the annular zone A2, so that the middle section A1 sprays
  • the increase in the speed of the electroplating solution is beneficial to increase the thickness of the film deposited in the central region of the substrate.
  • the distribution density of the liquid outlets 15 in the middle section A1 is greater than the distribution density of the liquid outlets 15 in the annular section S2, and the distribution density of the liquid return pipe 20 in the middle section A1 is greater than that of the annular section.
  • the distribution density of the liquid return pipe 20 of A2 increases the total amount of electroplating solution sprayed from the central area A1, thereby increasing the thickness of the film deposited in the central area of the substrate.
  • the above two methods can also be combined to make the diameter of the liquid outlet 15 of the middle section A1 smaller than that of the liquid outlet 15 of the annular section A2, and the diameter of the liquid return opening of the middle section A1 is smaller than that of the annular section
  • the diameter of the liquid return hole of A2 makes the distribution density of the liquid outlet 15 of the middle section A1 greater than the distribution density of the liquid outlet 15 of the annular section A2, and the distribution density of the liquid return pipe 20 of the middle section A1 is greater than The distribution density of the liquid return line 20 in the annular zone A2.
  • the diameter of the liquid outlet 15 in the middle section A1 is 0.2 to 0.5 times the diameter of the liquid outlet 15 in the annular section A2; the diameter of the liquid return pipe 20 in the middle section A1 It is 0.3 to 0.6 times of the liquid return line 20 in the annular zone A2.
  • the distance between two adjacent liquid outlets 15 is proportional to the diameter of the liquid outlet 15; the distance between two adjacent liquid return pipes 20 is proportional to the inner diameter of the liquid return pipe 20.
  • two adjacent liquid outlets 15 refer to two adjacent liquid outlets 15 among the plurality of liquid outlets 15 surrounding the same liquid return pipeline 20.
  • the liquid outlets 15 can be arranged in the same way, and the arrangement of the liquid return pipes 20 in different zones can also be the same.
  • the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a quadrilateral, pentagon or hexagon.
  • the position of the center of the middle section A1 is basically the same as the position of the center of the splitter plate, and the dimension L11 of the middle section A1 along the first direction is the ring-shaped section A2 along the first direction L12
  • the size of the central area A1 along the second direction L21 is 1 to 3 times the size of the ring-shaped area A2 along the second direction L22.
  • the first direction is the length direction of the splitter plate, that is, the left-right direction in FIG. 10
  • the second direction is the width direction of the splitter plate, that is, the up-down direction in FIG. 10.
  • the dimension L12 of the ring-shaped partition A2 in the first direction is: in the first direction, the distance between the inner and outer boundaries of the ring-shaped partition A2, and the dimension L22 of the ring-shaped partition A2 in the second direction is: In the second direction, the distance between the inner boundary and the outer boundary of the ring-shaped partition A2.
  • Fig. 13 is the second cross-sectional view taken along the line C-C in Fig. 9.
  • Fig. 13 is similar in structure to the splitter plate shown in Fig. 10, and only the difference between the two structures will be described below.
  • a partition wall 40 is provided in the accommodating cavity.
  • the splitter plate is also divided into a plurality of partitions (for example, the middle part area A1 and the ring-shaped partition A2 surrounding the middle part area A1), each of which is divided into A plurality of evenly distributed liquid return pipes 20 and a plurality of evenly distributed liquid outlets 15 are provided.
  • the caliber of the liquid outlet 15 in different zones is different, and the inner diameter of the liquid return pipeline 20 in different zones is different; and/or the distribution density of the liquid outlet 15 in different zones is different, and the liquid return pipeline in different zones The distribution density of 20 is different.
  • one of the containing sub-cavities is located covering the middle area A1.
  • two partition walls 40 divide the accommodating cavity into three accommodating sub-cavities on the left, middle and right. The remaining part is connected with the liquid inlet 14 on both sides.
  • the size relationship between the middle section A1 and the annular section A2, the size relationship of the inner diameter of the liquid return pipe 20 in each section, and the size relationship of the diameter of the liquid outlet 15 in each section are all referred to the above description. I won't repeat it here.
  • the uniform flow baffle 30 can also be set to other numbers, which is not limited here.
  • the amount of electroplating liquid in the containing cavity is The distribution of metal ions is chaotic, and when the plating solution is output from the outlet 15 on the first wall, the output plating solution is ejected in substantially the same direction, that is, the output direction of the metal ions in the plating solution is basically the same, and the plating solution
  • the jetting speed of the liquid is basically the same, which helps to improve the uniformity of the deposited film on the substrate.
  • FIG. 14 is a schematic diagram of the overall structure of the electrochemical deposition device provided in some embodiments of the disclosure, and FIG. 14 is a specific example of the electrochemical deposition device shown in FIG. 1a.
  • 15 is a schematic diagram of a partial structure of the electrochemical deposition device shown in FIG. 14, as shown in FIG. 14 and FIG.
  • the plate 300 and the substrate carrier 400 are used to load the substrate to be electroplated.
  • the plate 300 is disposed on the side of the electrode structure 200 facing the substrate, and the first wall is located on the side of the second wall away from the anode structure 200.
  • the distribution position and size of the liquid outlet can be adjusted to improve the uniformity of the thickness of the film deposited on the substrate.
  • the electrochemical deposition apparatus includes two electrode structures 200 and two shunt plates 300 corresponding to the two electrode structures 200 on a one-to-one basis.
  • the shunt plates 300 are located on the side of the corresponding electrode structure 200 close to the substrate.
  • the electrochemical deposition equipment can perform electrochemical deposition on two substrates at the same time, or perform electrochemical deposition on both surfaces of the same substrate at the same time, thereby improving production efficiency.
  • the electrochemical deposition apparatus further includes a support 800, and the substrate carrier 400 is disposed on the support 800 and moves under the driving of the driving device.
  • the electrochemical deposition equipment also includes a filter device 600, a drain pipe 700, an exhaust pipe 720, a power source 73, a monitoring device 90, and an auxiliary tank body 93.
  • the drain pipeline 700 includes a vertical portion 711 and a horizontal portion 712, the inlet of the vertical portion 711 is connected with the drain port of the containing tank, and the outlet of the vertical portion 711 is connected with the inlet of the horizontal portion 712.
  • the exhaust pipe 720 communicates with the top of the upright portion 711.
  • the filtering device 600 includes a filtering inlet and a filtering outlet.
  • the filtering inlet is communicated with the outlet of the horizontal portion 712 of the drain pipe 710, and the filtering outlet is communicated with the liquid inlet of the manifold 300.
  • the filtering device 600 is used for filtering the electroplating solution.
  • the power source 73 is used to drive the electroplating solution from the drain line 710 into the filter device 600 and from the filter device into the splitter plate 300.
  • the auxiliary tank body 93 has an auxiliary tank, which is in communication with the holding tank.
  • the monitoring device 90 is arranged in the auxiliary tank.
  • the monitoring device may specifically include a thermometer 91 and a level gauge 92 to monitor the temperature and level of the electroplating solution respectively. .

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  • Chemical Kinetics & Catalysis (AREA)
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  • Electroplating Methods And Accessories (AREA)

Abstract

Provided is a spreader plate in an electrochemical deposition device. The spreader plate comprises: an accommodation housing, wherein the accommodation housing comprises a first wall, a second wall arranged opposite the first wall, and a plurality of side walls connected between the first wall and the second wall, an accommodation cavity is defined by the first wall, the second wall and the plurality of side walls, a liquid inlet and a plurality of liquid outlets are provided in the accommodation housing, the liquid inlet and the liquid outlets are all in communication with the accommodation cavity, and the liquid outlets are provided in the first wall; and a plurality of liquid return pipelines, wherein the liquid return pipelines penetrate the accommodation cavity, inlets of the liquid return pipelines are provided in the first wall, and outlets of the liquid return pipelines are provided in the second wall. Further provided is the electrochemical deposition device. The spreader plate and the electrochemical deposition device provided in the present disclosure are conducive to improving the thickness uniformity of a deposited film layer on a substrate.

Description

分流板和电化学沉积设备Manifold and electrochemical deposition equipment
相关申请的交叉引用Cross-references to related applications
本申请要求于2020年5月9日提交至中国知识产权局的中国专利申请NO.202020752518.1的优先权,所公开的内容以引用的方式合并于此。This application claims the priority of Chinese patent application No. 202020752518.1 submitted to the China Intellectual Property Office on May 9, 2020, and the disclosed content is incorporated herein by reference.
技术领域Technical field
本公开涉及显示产品的生产领域,具体涉及一种分流板和电化学沉积设备。The present disclosure relates to the field of production of display products, and in particular to a shunt plate and electrochemical deposition equipment.
背景技术Background technique
电化学沉积工艺是一种低成本的化学性成膜方式,可以沉积得到2~20um厚的具备较低阻值的金属层。目前的电化学沉积设备通常适用于对尺寸较小的玻璃基板进行电化学沉积,而对于尺寸较大的玻璃基板,很容易出现成膜不均匀的问题。The electrochemical deposition process is a low-cost chemical film forming method, which can deposit a metal layer with a thickness of 2-20um with a relatively low resistance value. The current electrochemical deposition equipment is generally suitable for electrochemical deposition on glass substrates with a small size, while for glass substrates with a larger size, the problem of uneven film formation is prone to occur.
公开内容Public content
本公开提供一种用于电化学沉积设备中的分流板,所述分流板包括:The present disclosure provides a shunt plate used in an electrochemical deposition device, the shunt plate comprising:
容纳壳体,所述容纳壳体包括:第一壁、与所述第一壁相对设置的第二壁以及连接在所述第一壁与所述第二壁之间的多个侧壁,所述第一壁、所述第二壁和所述多个侧壁围成容纳腔,所述容纳壳体上设置有进液口和多个出液口,所述进液口和所述多个出液口均与所述容纳腔连通,所述多个出液口设置在第一壁上;The containing housing includes: a first wall, a second wall disposed opposite to the first wall, and a plurality of side walls connected between the first wall and the second wall, so The first wall, the second wall and the plurality of side walls enclose a containing cavity, the containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of The liquid outlets are all in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall;
多个回液管路,所述多个回液管路穿过所述容纳腔,所述多个回液管路的入口设置在所述第一壁上,所述多个回液管路的出口设置在所述第二壁上。A plurality of liquid return pipelines, the plurality of liquid return pipelines pass through the containing cavity, the inlets of the plurality of liquid return pipelines are arranged on the first wall, and the plurality of liquid return pipelines The outlet is provided on the second wall.
在一些实施例中,所述多个出液口的口径相同,所述多个回液管路的内径相同;所述多个出液口均匀分布,所述多个回液管路均匀分布。In some embodiments, the calibers of the plurality of liquid outlets are the same, and the inner diameters of the plurality of liquid return pipelines are the same; the plurality of liquid outlets are evenly distributed, and the plurality of liquid return pipelines are evenly distributed.
在一些实施例中,所述分流板划分为多个分区,每个所述分区均设置有均匀分布的多个所述回液管路和均匀分布的多个所述出液口,In some embodiments, the distribution plate is divided into a plurality of partitions, and each of the partitions is provided with a plurality of the liquid return pipelines and a plurality of the liquid outlets evenly distributed,
不同分区中的出液口的口径不同,不同分区中的回液管路的内径不同;和/或,The diameters of the liquid outlets in different zones are different, and the inner diameters of the liquid return pipes in different zones are different; and/or,
不同分区中的出液口的分布密度不同,不同分区中的回液管路的分布密度不同。The distribution density of liquid outlets in different zones is different, and the distribution density of liquid return pipes in different zones is different.
在一些实施例中,所述出液口的口径小于所述回液管路的内径。In some embodiments, the diameter of the liquid outlet is smaller than the inner diameter of the liquid return pipeline.
在一些实施例中,同一个所述分区中,所述回液管路的内径为所述出液口的口径30~60倍。In some embodiments, in the same partition, the inner diameter of the liquid return pipeline is 30-60 times the caliber of the liquid outlet.
在一些实施例中,所述多个分区包括位于所述分流板中部的中部分区和至少一个环绕所述中部分区的环状分区,In some embodiments, the plurality of partitions includes a middle section located in the middle of the splitter plate and at least one ring-shaped section surrounding the middle section,
所述中部分区的出液口的口径小于所述环状分区的出液口的口径,所述中部分区的回液管路的内径小于所述环状分区的回液管路的内径;和/或,The caliber of the liquid outlet of the middle section is smaller than the caliber of the liquid outlet of the annular zone, and the inner diameter of the liquid return pipeline of the middle zone is smaller than the inner diameter of the liquid return pipeline of the annular zone; and / or,
所述中部分区的出液口的分布密度大于所述环状分区的出液口的分布密度,所述中部分区的回液管路的分布密度大于所述环状分区的回液管路的分布密度。The distribution density of the liquid outlets of the middle section is greater than the distribution density of the liquid outlets of the annular section, and the distribution density of the liquid return pipes in the middle section is greater than the liquid return pipes of the annular section The distribution density.
在一些实施例中,所述中部分区的出液口的口径位于所述环状分区的出液口的口径的0.2~0.5倍,所述中部分区的回液管路的内径为所述环状分区的回液管路的内径的0.3~0.6倍。In some embodiments, the diameter of the liquid outlet of the middle section is 0.2 to 0.5 times the diameter of the liquid outlet of the annular section, and the inner diameter of the liquid return pipeline of the middle section is the 0.3 to 0.6 times the inner diameter of the liquid return pipe of the annular zone.
在一些实施例中,所述中部分区沿第一方向的尺寸为所述环状分区沿所述第一方向的尺寸的1~3倍,所述中部分区沿第二方向的尺寸为所述环状分区沿所述第二方向的尺寸的1~3倍。In some embodiments, the size of the middle region in the first direction is 1 to 3 times the size of the ring-shaped partition in the first direction, and the size of the middle region in the second direction is the same. The size of the ring-shaped partition along the second direction is 1 to 3 times.
在一些实施例中,所述容纳腔内设置有分隔壁,所述分隔壁将所述容纳腔分隔为互不连通的多个容纳子腔,每个所述容纳子 腔均与至少一个所述进液口和均匀分布的多个所述出液口连通。In some embodiments, a partition wall is provided in the accommodating cavity, and the partition wall divides the accommodating cavity into a plurality of accommodating subcavities that are not connected to each other, and each accommodating subcavity is connected to at least one of the accommodating subcavities. The liquid inlet is communicated with a plurality of evenly distributed liquid outlets.
在一些实施例中,所述进液口设置在所述容纳壳体的侧壁上,所述分流板还包括设置在所述容纳腔中的至少一个匀流挡板,所述匀流挡板将所述容纳腔分隔为主腔和至少一个均压腔,所述进液口与所述均压腔连通,所述出液口与所述主腔连通,所述回液管路穿过所述主腔,所述匀流挡板上设置有均匀分布的多个通孔,所述均压腔与所述主腔通过所述匀流挡板上的所述通孔连通。In some embodiments, the liquid inlet is arranged on the side wall of the containing shell, the flow dividing plate further includes at least one uniform flow baffle arranged in the containing cavity, the uniform flow baffle The accommodating cavity is divided into a main cavity and at least one pressure equalization cavity, the liquid inlet is in communication with the pressure equalization cavity, the liquid outlet is in communication with the main cavity, and the liquid return pipeline passes through the In the main cavity, the uniform flow baffle is provided with a plurality of uniformly distributed through holes, and the pressure equalization cavity is communicated with the main cavity through the through holes on the uniform flow baffle.
在一些实施例中,所述多个侧壁包括相对的第一侧壁和第二侧壁,所述第一侧壁和所述第二侧壁上均设置有所述进液口,所述容纳腔中靠近所述第一侧壁的位置和所述第二侧壁的位置均设置有两个所述匀流挡板,以将所述容纳腔分隔为一个所述主腔和四个所述均压腔,In some embodiments, the plurality of side walls includes a first side wall and a second side wall opposite to each other, the first side wall and the second side wall are both provided with the liquid inlet, the In the accommodating cavity near the first side wall and the second side wall, two uniform flow baffles are provided to separate the accommodating cavity into one main cavity and four sub-cavities. The pressure equalizing cavity,
在所述主腔的同一侧,靠近所述进液口的匀流挡板上的通孔孔径大于远离所述进液口的匀流挡板上的通孔孔径,靠近所述进液口的匀流挡板上的通孔分布密度小于远离所述进液口的匀流挡板上的通孔的分布密度。On the same side of the main cavity, the diameter of the through hole on the uniform flow baffle near the liquid inlet is larger than the diameter of the through hole on the uniform flow baffle far away from the liquid inlet. The distribution density of the through holes on the uniform flow baffle is smaller than the distribution density of the through holes on the uniform flow baffle far from the liquid inlet.
在一些实施例中,每个所述回流孔周围均设置有与其相邻的多个出液口,对于至少一部分数量的回液管路,所述回液管路周围的多个出液口的中心连线构成四边形、五边形或六边形。In some embodiments, each of the return holes is provided with a plurality of liquid outlets adjacent to it. For at least a part of the number of liquid return pipes, the plurality of liquid outlets around the liquid return pipe are The center line forms a quadrilateral, pentagon or hexagon.
本公开实施例还提供一种电化学沉积设备,包括:容纳槽、电极结构、分流板和基板载具,所述分流板为上述实施例中提供的分流板,所述基板载具用于装载待电镀的基板,所述电极结构和所述分流板设置在所述容纳槽中,所述分流板设置在所述电极结构朝向所述基板的一侧,所述第一壁位于所述第二壁远离所述阳极结构的一侧。The embodiments of the present disclosure also provide an electrochemical deposition device, including: a receiving tank, an electrode structure, a shunt plate, and a substrate carrier, the shunt plate is the shunt plate provided in the above embodiment, and the substrate carrier is used for loading For the substrate to be electroplated, the electrode structure and the shunt plate are arranged in the receiving groove, the shunt plate is arranged on the side of the electrode structure facing the substrate, and the first wall is located at the second The side of the wall away from the anode structure.
附图说明Description of the drawings
附图是用来提供对本公开的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本公开,但并不构 成对本公开的限制。在附图中:The accompanying drawings are used to provide a further understanding of the present disclosure, and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the attached picture:
图1a为本公开的一些实施例中提供的分流板所在的电化学沉积设备的部分结构的立体图;Fig. 1a is a perspective view of a partial structure of an electrochemical deposition device in which a splitter plate provided in some embodiments of the present disclosure is located;
图1b为本公开的一些实施例中提供的分流板的立体图;Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure;
图2为本公开的一些实施例中提供的分流板的主视图;Fig. 2 is a front view of a manifold provided in some embodiments of the present disclosure;
图3为沿图1b中B-B线的剖视图之一;Figure 3 is one of the cross-sectional views taken along line B-B in Figure 1b;
图4为沿图2中I-I线的剖视图;Figure 4 is a cross-sectional view taken along the line I-I in Figure 2;
图5为图2中P区域的局部示意图;Fig. 5 is a partial schematic diagram of the P area in Fig. 2;
图6为出液口与回液管路的另外两种位置关系示意图;Figure 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline;
图7为沿图1b中B-B线的剖视图之二;Figure 7 is the second cross-sectional view taken along line B-B in Figure 1b;
图8为沿图1b中B-B线的剖视图之三;Figure 8 is the third cross-sectional view taken along line B-B in Figure 1b;
图9为本公开的另一些实施例中提供的分流板的立体图;FIG. 9 is a perspective view of a splitter plate provided in some other embodiments of the present disclosure;
图10为本公开的另一些实施例中提供的分流板的主视图;FIG. 10 is a front view of a splitter plate provided in some other embodiments of the present disclosure;
图11为沿图9中C-C线的剖视图之一;Figure 11 is one of the cross-sectional views taken along line C-C in Figure 9;
图12为沿图10中J-J线的剖视图;Figure 12 is a cross-sectional view taken along line J-J in Figure 10;
图13为沿图9中C-C线的剖视图之一;Figure 13 is one of the cross-sectional views taken along line C-C in Figure 9;
图14为本公开的一些实施例中提供的电化学沉积设备的整体结构示意图;14 is a schematic diagram of the overall structure of an electrochemical deposition device provided in some embodiments of the present disclosure;
图15为图14所示的电化学沉积设备的部分结构示意图。FIG. 15 is a schematic diagram of a part of the structure of the electrochemical deposition apparatus shown in FIG. 14.
具体实施方式Detailed ways
以下结合附图对本公开的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本公开,并不用于限制本公开。The specific embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure.
本公开实施例提供一种用于电化学沉积设备中的分流板,图1a为本公开的一些实施例中提供的分流板所在的电化学沉积设备的立体图,如图1a所示,电化学沉积设备包括:具有容纳槽的槽体100、电极结构200、分流板300和基板载具400,基板载具400用于装载待电镀的基板500,电极结构200和分流板300设置在容纳槽中,分流板300设置在电极结构200朝向基板500 的一侧。The embodiments of the present disclosure provide a shunt plate used in electrochemical deposition equipment. FIG. 1a is a perspective view of the electrochemical deposition equipment where the shunt plate provided in some embodiments of the present disclosure is located. As shown in FIG. 1a, the electrochemical deposition The equipment includes: a tank body 100 with a receiving groove, an electrode structure 200, a shunt plate 300, and a substrate carrier 400. The substrate carrier 400 is used to load the substrate 500 to be electroplated. The electrode structure 200 and the shunt plate 300 are arranged in the receiving groove. The shunt plate 300 is disposed on the side of the electrode structure 200 facing the substrate 500.
图1b为本公开的一些实施例中提供的分流板的立体图,图2为本公开的一些实施例中提供的分流板的主视图,图3为沿图1b中B-B线的剖视图之一,图4为沿图2中I-I线的剖视图,结合图1b至图4所示,分流板包括:容纳壳体10和多个回液管路20。其中,容纳壳体10包括:第一壁11、与第一壁11相对设置的第二壁12以及连接在第一壁11与第二壁12之间的多个侧壁13,第一壁11、第二壁12和多个侧壁13围成容纳腔,容纳壳体10上设置有进液口14和多个出液口15,进液口14和出液口15均与容纳腔连通,出液口15设置在第一壁11上。回液管路20穿过容纳腔,回液管路20的入口设置在第一壁11上,回液管路20的出口设置在第二壁12上,即回液管路20以通孔的形式设置在容纳壳体上。Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure, Fig. 2 is a front view of a shunt plate provided in some embodiments of the present disclosure, and Fig. 3 is one of the cross-sectional views along the line BB in Fig. 1b. 4 is a cross-sectional view taken along the line II in FIG. 2, as shown in FIG. 1 b to FIG. 4, the flow dividing plate includes: an accommodating housing 10 and a plurality of liquid return pipes 20. Wherein, the containing housing 10 includes: a first wall 11, a second wall 12 disposed opposite to the first wall 11, and a plurality of side walls 13 connected between the first wall 11 and the second wall 12, the first wall 11 , The second wall 12 and the plurality of side walls 13 enclose a containing cavity, and the containing housing 10 is provided with a liquid inlet 14 and a plurality of liquid outlets 15. The liquid inlet 14 and the liquid outlet 15 are both in communication with the containing cavity, The liquid outlet 15 is provided on the first wall 11. The liquid return pipeline 20 passes through the containing cavity, the inlet of the liquid return pipeline 20 is arranged on the first wall 11, and the outlet of the liquid return pipeline 20 is arranged on the second wall 12, that is, the liquid return pipeline 20 has a through hole. The form is set on the containing shell.
在进行电化学沉积工艺时,电极结构200、待电镀的基板和分流板均设置在容纳槽中,电极结构200连接电源装置的阳极,基板载具400连接电源装置的阴极,从而在电极结构200与基板500之间形成电场。电镀液从分流板的进液口14通入容纳腔内,并从出液口15输出,回液口用于使分流板两侧的电镀液穿过分流板而进行流通。在电场作用下,电镀液中的金属离子在基板上沉积形成金属膜层。由于电镀液是从出液口15输出的,因此,在对大尺寸的基板进行电化学沉积工艺时,可以通过调整出液口15的分布位置和出液口15的大小,从而提高基板上沉积的膜层厚度均一性。During the electrochemical deposition process, the electrode structure 200, the substrate to be electroplated and the shunt plate are all set in the containing tank, the electrode structure 200 is connected to the anode of the power supply device, and the substrate carrier 400 is connected to the cathode of the power supply device, so that the electrode structure 200 is connected to the cathode of the power supply device. An electric field is formed between the substrate 500 and the substrate 500. The electroplating solution is introduced into the containing cavity from the liquid inlet 14 of the manifold and is output from the liquid outlet 15. The liquid return port is used to allow the electroplating liquid on both sides of the manifold to pass through the manifold to circulate. Under the action of the electric field, the metal ions in the electroplating solution are deposited on the substrate to form a metal film layer. Since the electroplating solution is output from the liquid outlet 15, when the electrochemical deposition process is performed on a large-sized substrate, the distribution position of the liquid outlet 15 and the size of the liquid outlet 15 can be adjusted to improve the deposition on the substrate. The film thickness uniformity.
在本公开的一些实施例中,如图2所示,出液口15均匀分布,多个回液管路20均匀分布,多个出液口15的口径相同,多个回液管路20的内径也相同,从而使得不同位置输出的电镀液的流量相同,进而在电场均匀的情况下,提高基板上沉积膜层的均一性。In some embodiments of the present disclosure, as shown in FIG. 2, the liquid outlets 15 are evenly distributed, and the multiple liquid return pipes 20 are evenly distributed. The diameters of the multiple liquid outlets 15 are the same. The inner diameter is also the same, so that the flow rate of the electroplating solution output from different positions is the same, and in the case of a uniform electric field, the uniformity of the deposited film on the substrate is improved.
图5为图2中P区域的局部示意图,如图5所示,每个回液管路20周围均设置有与其相邻的多个出液口15,对于至少一 部分数量的回液管路20而言,回液管路20周围的多个出液口15的中心连线构成六边形。当然,出液口15也可以按照其他方式分布,图6为出液口与回液管路的另外两种位置关系示意图,如图6所示,回液管路20周围的多个出液口15的中心连线也可以构成五边形或者四边形。FIG. 5 is a partial schematic diagram of the P area in FIG. 2. As shown in FIG. In other words, the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a hexagon. Of course, the liquid outlets 15 can also be distributed in other ways. FIG. 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline. As shown in FIG. 6, there are multiple liquid outlets around the liquid return pipeline 20. The central line of 15 can also form a pentagon or a quadrilateral.
其中,回液管路20周围的多个出液口15的中心连线构成四边形、五边形或者六边形等多边形时,回液管路的入口的中心位于该多边形的中心位置,这样,当分流板置于容纳槽中进行电化学沉积工艺时,多边形所在区域一侧的电镀液中的金属离子分布更均匀,从而使基板与多边形对应的区域所沉积的膜层分布更均匀。Wherein, when the center connection of the plurality of liquid outlets 15 around the liquid return pipeline 20 forms a polygon such as a quadrilateral, pentagon or hexagon, the center of the inlet of the liquid return pipeline is located at the center of the polygon, thus, When the shunt plate is placed in the containing tank for electrochemical deposition, the distribution of metal ions in the electroplating solution on the side of the polygon is more uniform, so that the distribution of the film deposited on the substrate and the area corresponding to the polygon is more uniform.
其中,出液口15的口径小于回液管路20的内径。例如,回液管路20的内径为出液口15的口径30~60倍,由此,可以设置更多数量的出液口15,从而从而提高基板上沉积的膜层厚度均一性。Among them, the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20. For example, the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15 so that a larger number of liquid outlets 15 can be provided, thereby improving the uniformity of the thickness of the film deposited on the substrate.
可选地,如图3所示,进液口14设置在容纳壳体10的侧壁上,分流板还包括设置在容纳腔中的至少一个匀流挡板30,匀流挡板30将容纳腔分隔为主腔S1和至少一个均压腔S2,进液口14与均压腔S2连通,出液口15与主腔S1连通,回液管路20穿过主腔,匀流挡板30上设置有均匀分布的多个通孔V,均压腔S2与主腔S1通过匀流挡板上的通孔V连通。当未设置匀流挡板30时,进液口14附近位置(如图3中的位置A)的液体压力较大,远离进液口14位置(如图3中的位置a)的液体压力较小。设置匀流挡板30后,可以使电镀液的压力分布更均匀。Optionally, as shown in FIG. 3, the liquid inlet 14 is arranged on the side wall of the containing housing 10, and the distribution plate further includes at least one uniform flow baffle 30 arranged in the containing cavity, and the uniform flow baffle 30 will accommodate The chamber is divided into a main chamber S1 and at least one pressure equalizing chamber S2, the liquid inlet 14 is connected to the equalizing chamber S2, the liquid outlet 15 is connected to the main chamber S1, the liquid return pipeline 20 passes through the main chamber, and the uniform flow baffle 30 A plurality of evenly distributed through holes V are arranged on the upper part, and the pressure equalization cavity S2 and the main cavity S1 are communicated through the through holes V on the uniform flow baffle. When the uniform flow baffle 30 is not provided, the liquid pressure near the liquid inlet 14 (position A in FIG. 3) is relatively high, and the liquid pressure at a position far away from the liquid inlet 14 (position a in FIG. 3) is relatively high. small. After the uniform flow baffle 30 is provided, the pressure distribution of the electroplating solution can be made more uniform.
如图3所示,进液口14的数量为多个,分流板的多个侧壁包括相对的第一侧壁131和第二侧壁132,第一侧壁131和第二侧壁132上均设置有进液口14。例如图3所示,第一侧壁131和第二侧壁132上均设置有三个进液口14。As shown in FIG. 3, the number of the liquid inlet 14 is multiple, and the multiple side walls of the distribution plate include a first side wall 131 and a second side wall 132 opposite to each other. The first side wall 131 and the second side wall 132 are Both are provided with a liquid inlet 14. For example, as shown in FIG. 3, the first side wall 131 and the second side wall 132 are each provided with three liquid inlets 14.
图7为沿图1b中B-B线的剖视图之二,如图7所示,在另一些实施例中,容纳腔中靠近第一侧壁131和第二侧壁132的位 置均设置有两个匀流档板30,从而将容纳腔分隔为一个主腔S1和四个均压腔S2。其中,在主腔S1的同一侧(图7中的上侧或下侧),靠近进液口14的匀流挡板上的通孔V的孔径大于远离进液口14的匀流挡板30上的通孔V的孔径,靠近进液口14的匀流挡板30上的通孔V分布密度小于远离进液口14的匀流挡板30上的通孔V的分布密度。FIG. 7 is the second cross-sectional view taken along line BB in FIG. 1b. As shown in FIG. 7, in other embodiments, two even positions are provided in the accommodating cavity near the first side wall 131 and the second side wall 132. The flow baffle plate 30 thus divides the containing chamber into a main chamber S1 and four pressure equalizing chambers S2. Wherein, on the same side of the main chamber S1 (upper side or lower side in FIG. 7), the diameter of the through hole V on the uniform flow baffle near the liquid inlet 14 is larger than that of the uniform flow baffle 30 far away from the liquid inlet 14 The diameter of the upper through holes V, the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 is smaller than the distribution density of the through holes V on the uniform flow baffle 30 far away from the liquid inlet 14.
需要说明的是,图7中的匀流档板30也可以设置为其他数量,只需要在主腔S1的同一侧,靠近进液口14的匀流挡板上的通孔V的孔径大于远离进液口14的匀流挡板30上的通孔V的孔径、靠近进液口14的匀流挡板30上的通孔V的分布密度小于远离进液口14的匀流挡板30上的通孔V的分布密度即可。例如,靠近进液口14的匀流挡板上的通孔V孔径为远离进液口14的匀流挡板30上的通孔V孔径的1.5~4倍,另外,靠近进液口14的匀流挡板30上的相邻两个通孔V之间的距离为d1,远离进液口14的匀流挡板30上的相邻两个通孔V之间的距离为d2,其中,d1为d2的2~4倍,相邻两个通孔V之间的距离为两个通孔V之间的最近距离。It should be noted that the uniform flow baffle 30 in FIG. 7 can also be set to other numbers. It only needs to be on the same side of the main chamber S1. The diameter of the through holes V on the uniform flow baffle 30 of the liquid inlet 14 and the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 are smaller than those on the uniform flow baffle 30 far away from the liquid inlet 14 The distribution density of the through holes V is sufficient. For example, the aperture V of the through hole V on the uniform flow baffle close to the liquid inlet 14 is 1.5 to 4 times the aperture of the through hole V on the uniform flow baffle 30 far from the liquid inlet 14; in addition, the aperture near the liquid inlet 14 The distance between two adjacent through holes V on the uniform flow baffle 30 is d1, and the distance between two adjacent through holes V on the uniform flow baffle 30 far away from the liquid inlet 14 is d2, where, d1 is 2 to 4 times of d2, and the distance between two adjacent through holes V is the shortest distance between two through holes V.
图8为沿图1b中B-B线的剖视图之三,图8中所示的分流板与图3中所示的分流板的结构类似,下面仅对两种结构的区别进行描述。如图3所示,容纳腔内设置有分隔壁40,分隔壁40将容纳腔分隔为互不连通的多个容纳子腔(例如,图8中的两个分隔壁40将容纳腔分成了三个容纳子腔),每个容纳子腔均与至少一个进液口14和均匀分布的多个出液口15连通。在进行电化学沉积时,当基板上某一区域所处的电场强度较小时,可以增大该区域所对应的容纳子腔的进液量,从而提高基板上沉积膜层的均匀性。Fig. 8 is the third cross-sectional view taken along line B-B in Fig. 1b. The shunt plate shown in Fig. 8 has a similar structure to the shunt plate shown in Fig. 3, and only the difference between the two structures will be described below. As shown in FIG. 3, a partition wall 40 is provided in the accommodating cavity, and the partition wall 40 divides the accommodating cavity into a plurality of accommodating sub-cavities that are not connected to each other (for example, the two partition walls 40 in FIG. 8 divide the accommodating cavity into three Each containing sub-cavity), each containing sub-cavity is connected with at least one liquid inlet 14 and a plurality of liquid outlets 15 evenly distributed. During electrochemical deposition, when the electric field intensity of a certain area on the substrate is relatively small, the liquid intake of the containing subcavity corresponding to the area can be increased, thereby improving the uniformity of the deposited film on the substrate.
在一具体示例中,如图8所示,两个分隔壁40将容纳腔分成了左、中、右三个容纳子腔,位于中间的容纳子腔包括:第一主腔部Sa1和两个第二主腔部Sa2。其中,第一主腔部Sa1为矩形腔,第一主腔部Sa1为主腔S1的一部分,并至少覆盖分流板 的中心;第二主腔部Sa2的一部分为主腔S1的一部分,第二主腔部Sa2的另一部分为均压腔S2的一部分。可选地,第一主腔部Sa1的长度为主腔S1的长度的1/4~3/4,第一主腔部Sa1的宽度为主腔S1的长度的1/4~3/4。In a specific example, as shown in FIG. 8, two partition walls 40 divide the accommodating cavity into three accommodating subcavities on the left, center, and right. The accommodating subcavity in the middle includes: a first main cavity portion Sa1 and two The second main cavity Sa2. Among them, the first main cavity portion Sa1 is a rectangular cavity, the first main cavity portion Sa1 is a part of the main cavity S1 and covers at least the center of the manifold; a portion of the second main cavity portion Sa2 is a part of the main cavity S1, and the second main cavity portion Sa2 is a part of the main cavity S1. The other part of the main chamber Sa2 is a part of the equalizing chamber S2. Optionally, the length of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1, and the width of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1.
图9为本公开的另一些实施例中提供的分流板的立体图,图10为本公开的另一些实施例中提供的分流板的主视图,图11为沿图9中C-C线的剖视图之一,图12为沿图10中J-J线的剖视图。如图9至图12所示,图9所示的分流板与图1b所示的分流板的结构类似,同样包括容纳壳体10和多个回液管路20,容纳壳体10上设置有多个进液口14和多个出液口15,另外还包括具有通孔的匀流挡板30。下面仅对两种结构的区别进行描述。如图9所示,在另一些实施例中,分流板划分为多个分区A1和A2,每个分区A1/A2均设置有均匀分布的多个回液管路20和均匀分布的多个出液口15,不同分区中的出液口15的口径不同,不同分区的回液管路20的内径不同。Figure 9 is a perspective view of a manifold provided in other embodiments of the present disclosure, Figure 10 is a front view of a manifold provided in other embodiments of the present disclosure, and Figure 11 is one of the cross-sectional views along line CC in Figure 9 , Figure 12 is a cross-sectional view along line JJ in Figure 10. As shown in Figures 9 to 12, the manifold shown in Figure 9 has a similar structure to the manifold shown in Figure 1b, and also includes a containing housing 10 and a plurality of liquid return pipes 20. The containing housing 10 is provided with The plurality of liquid inlets 14 and the plurality of liquid outlets 15 further include a uniform flow baffle 30 with through holes. Only the difference between the two structures will be described below. As shown in Figure 9, in other embodiments, the manifold is divided into a plurality of partitions A1 and A2, and each partition A1/A2 is provided with a plurality of evenly distributed return lines 20 and a plurality of evenly distributed outlets. The liquid port 15 has different calibers of the liquid outlet 15 in different zones, and the inner diameter of the liquid return pipe 20 in different zones is different.
由于不同分区的出液口15的口径不同,因此,不同分区的出液口15喷出的电镀液的速度不同。在电场不均匀的情况下,可以将电场强度较大的位置所对应的分区中的出液口15口径设置得较小,将电场强度较小的位置所对应的分区中的出液口15的口径设置得较大,以使得基板上不同位置沉积的膜层的厚度更加均匀。Since the diameters of the liquid outlets 15 in different zones are different, the speeds of the electroplating solution sprayed from the liquid outlets 15 in different zones are different. In the case of non-uniform electric field, the diameter of the liquid outlet 15 in the partition corresponding to the position with larger electric field intensity can be set to be smaller, and the diameter of the liquid outlet 15 in the partition corresponding to the position with lower electric field strength can be set to be smaller. The aperture is set to be larger, so that the thickness of the film deposited at different positions on the substrate is more uniform.
在一具体示例中,在同一个分区中,出液口15的口径小于回液管路20的内径。例如,回液管路20的内径为出液口15的口径30~60倍。In a specific example, in the same subarea, the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20. For example, the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15.
在进行电化学沉积时,电极结构的边缘位置可能会出现尖端放电,从而导致电极结构的边缘区域的电场强度较大,中部区域的电场强度较小,进而导致基板中部区域沉积的膜层厚度较小,基板的边缘区域沉积的膜层厚度较大。为了防止这一现象,如图9和图10所示,分流板的多个分区包括中部分区A1和至少一个环绕中部分区A1的环状分区A2,其中,中部分区A1的出液口 15的口径小于环状分区A2的出液口15的口径,所述中部分区A1的回液口的口径小于所述环状分区A2的回液孔的口径,从而使得中部分区A1所喷出的电镀液的速度增加,有利于增大基板中部区域所沉积的膜层厚度。当然,也可以使中部分区A1的出液口15的分布密度大于所述环状分区S2的出液口15的分布密度,中部分区A1的回液管路20的分布密度大于环状分区A2的回液管路20的分布密度,从而使得中部分区A1所喷出的电镀液的总量增多,进而增大基板中部区域所沉积的膜层厚度。当然,也可以将上述两种方式结合,使中部分区A1的出液口15的口径小于环状分区A2的出液口15的口径,中部分区A1的回液口的口径小于环状分区A2的回液孔的口径,同时使得中部分区A1的出液口15的分布密度大于环状分区A2的出液口15的分布密度,中部分区A1的回液管路20的分布密度大于环状分区A2的回液管路20的分布密度。During electrochemical deposition, tip discharge may occur at the edge of the electrode structure, resulting in a larger electric field intensity in the edge area of the electrode structure and a smaller electric field intensity in the middle area, which in turn leads to a thicker film deposited in the middle area of the substrate. Smaller, the thickness of the film deposited on the edge area of the substrate is larger. In order to prevent this phenomenon, as shown in Figures 9 and 10, the multiple partitions of the manifold include a middle section A1 and at least one annular section A2 surrounding the middle section A1, wherein the liquid outlet of the middle section A1 The caliber of 15 is smaller than the caliber of the liquid outlet 15 of the annular zone A2, and the caliber of the liquid return port of the middle section A1 is smaller than the caliber of the liquid return hole of the annular zone A2, so that the middle section A1 sprays The increase in the speed of the electroplating solution is beneficial to increase the thickness of the film deposited in the central region of the substrate. Of course, it is also possible to make the distribution density of the liquid outlets 15 in the middle section A1 greater than the distribution density of the liquid outlets 15 in the annular section S2, and the distribution density of the liquid return pipe 20 in the middle section A1 is greater than that of the annular section. The distribution density of the liquid return pipe 20 of A2 increases the total amount of electroplating solution sprayed from the central area A1, thereby increasing the thickness of the film deposited in the central area of the substrate. Of course, the above two methods can also be combined to make the diameter of the liquid outlet 15 of the middle section A1 smaller than that of the liquid outlet 15 of the annular section A2, and the diameter of the liquid return opening of the middle section A1 is smaller than that of the annular section The diameter of the liquid return hole of A2 makes the distribution density of the liquid outlet 15 of the middle section A1 greater than the distribution density of the liquid outlet 15 of the annular section A2, and the distribution density of the liquid return pipe 20 of the middle section A1 is greater than The distribution density of the liquid return line 20 in the annular zone A2.
在一些实施例中,中部分区A1中的出液口15的口径为环状分区A2中的出液口15的口径的0.2~0.5倍;中部分区A1中的回液管路20的口径为环状分区A2中的回液管路20的0.3~0.6倍。每个分区中,相邻两个出液口15之间的间距与出液口15的口径成正比;相邻两个回液管路20之间的间距与回液管路20内径成正比。其中,相邻两个出液口15是指,环绕同一个回液管路20的多个出液口15中的相邻两个出液口15。In some embodiments, the diameter of the liquid outlet 15 in the middle section A1 is 0.2 to 0.5 times the diameter of the liquid outlet 15 in the annular section A2; the diameter of the liquid return pipe 20 in the middle section A1 It is 0.3 to 0.6 times of the liquid return line 20 in the annular zone A2. In each partition, the distance between two adjacent liquid outlets 15 is proportional to the diameter of the liquid outlet 15; the distance between two adjacent liquid return pipes 20 is proportional to the inner diameter of the liquid return pipe 20. Wherein, two adjacent liquid outlets 15 refer to two adjacent liquid outlets 15 among the plurality of liquid outlets 15 surrounding the same liquid return pipeline 20.
在不同的分区,出液口15可以按照相同方式进行排布,不同分区中的回液管路20的排布方式也可以相同。例如,在每个分区,回液管路20周围的多个出液口15的中心连线构成四边形、五边形或六边形。In different zones, the liquid outlets 15 can be arranged in the same way, and the arrangement of the liquid return pipes 20 in different zones can also be the same. For example, in each zone, the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a quadrilateral, pentagon or hexagon.
在一具体示例中,如图10所示,中部分区A1中心的位置与分流板的中心的位置基本一致,中部分区A1沿第一方向的尺寸L11为环状分区A2沿第一方向L12的尺寸的1~3倍,中部分区A1沿第二方向L21的尺寸为环状分区A2沿第二方向L22的尺寸的1~3倍。其中,第一方向为分流板的长度方向,即图10 中的左右方向,第二方向为分流板的宽度方向,即图10中的上下方向。另外,环状分区A2沿第一方向的尺寸L12为:在第一方向上,环状分区A2的内边界和外边界之间的距离,环状分区A2沿第二方向的尺寸L22为:在第二方向上,环状分区A2的内边界和外边界之间的距离。In a specific example, as shown in FIG. 10, the position of the center of the middle section A1 is basically the same as the position of the center of the splitter plate, and the dimension L11 of the middle section A1 along the first direction is the ring-shaped section A2 along the first direction L12 The size of the central area A1 along the second direction L21 is 1 to 3 times the size of the ring-shaped area A2 along the second direction L22. Wherein, the first direction is the length direction of the splitter plate, that is, the left-right direction in FIG. 10, and the second direction is the width direction of the splitter plate, that is, the up-down direction in FIG. 10. In addition, the dimension L12 of the ring-shaped partition A2 in the first direction is: in the first direction, the distance between the inner and outer boundaries of the ring-shaped partition A2, and the dimension L22 of the ring-shaped partition A2 in the second direction is: In the second direction, the distance between the inner boundary and the outer boundary of the ring-shaped partition A2.
图13为沿图9中C-C线的剖视图之二,图13与图10所示的分流板的结构类似,下面仅对两种结构的区别进行描述。如图13所示,容纳腔中设置有分隔壁40,同时,分流板也被划分成多个分区(例如,中部分区A1和环绕中部分区A1的环状分区A2),每个分区均设置有均匀分布的多个回液管路20和均匀分布的多个出液口15。不同分区中的出液口15的口径不同,不同分区中的回液管路20的内径不同;和/或,不同分区中的出液口15的分布密度不同,不同分区中的回液管路20的分布密度不同。Fig. 13 is the second cross-sectional view taken along the line C-C in Fig. 9. Fig. 13 is similar in structure to the splitter plate shown in Fig. 10, and only the difference between the two structures will be described below. As shown in Figure 13, a partition wall 40 is provided in the accommodating cavity. At the same time, the splitter plate is also divided into a plurality of partitions (for example, the middle part area A1 and the ring-shaped partition A2 surrounding the middle part area A1), each of which is divided into A plurality of evenly distributed liquid return pipes 20 and a plurality of evenly distributed liquid outlets 15 are provided. The caliber of the liquid outlet 15 in different zones is different, and the inner diameter of the liquid return pipeline 20 in different zones is different; and/or the distribution density of the liquid outlet 15 in different zones is different, and the liquid return pipeline in different zones The distribution density of 20 is different.
在一具体示例中,分隔壁40所分隔出的多个容纳子腔中,其中一个容纳子腔所在范围覆盖中部分区A1。例如,如图13所示,两个分隔壁40将容纳腔分隔为左、中、右三个容纳子腔,中部的容纳子腔的一部分与中部分区A1基本重合,中部的容纳子腔的其余部分与两侧的进液口14连通。In a specific example, among the plurality of containing sub-cavities separated by the partition wall 40, one of the containing sub-cavities is located covering the middle area A1. For example, as shown in Fig. 13, two partition walls 40 divide the accommodating cavity into three accommodating sub-cavities on the left, middle and right. The remaining part is connected with the liquid inlet 14 on both sides.
其中,中部分区A1和环状分区A2的尺寸关系、各分区中的回液管路20的内径大小关系、各分区中出液口15的口径大小关系均参见上文描述。这里不再赘述。Among them, the size relationship between the middle section A1 and the annular section A2, the size relationship of the inner diameter of the liquid return pipe 20 in each section, and the size relationship of the diameter of the liquid outlet 15 in each section are all referred to the above description. I won't repeat it here.
需要说明的是,图12和图13所示的结构中,匀流档板30也可以设置为其他数量,在此不做限定。It should be noted that in the structures shown in FIGS. 12 and 13, the uniform flow baffle 30 can also be set to other numbers, which is not limited here.
对于图1b所示的分流板,通过对电镀液经过该分流板的流向进行模拟仿真发现,电镀液从分流板的进液口14进入分流板的容纳腔后,容纳腔中的电镀液中的金属离子分布混乱,而电镀液从第一壁上的出液口15输出时,输出的电镀液的沿基本相同的方向喷出,即,电镀液中的金属离子的输出方向基本一致,且电镀液的喷出速度基本一致,从而有利于提高基板上沉积膜层的均一性。另外,随着电化学沉积工艺的进行,出液口15输出的 电镀液的一部分会经过回液管路20流向分流板的另一侧,以使电镀液在分流板的两侧均匀分布。For the manifold shown in Figure 1b, by simulating the flow direction of the electroplating solution through the manifold, it is found that after the electroplating solution enters the containing cavity of the manifold from the liquid inlet 14 of the manifold, the amount of electroplating liquid in the containing cavity is The distribution of metal ions is chaotic, and when the plating solution is output from the outlet 15 on the first wall, the output plating solution is ejected in substantially the same direction, that is, the output direction of the metal ions in the plating solution is basically the same, and the plating solution The jetting speed of the liquid is basically the same, which helps to improve the uniformity of the deposited film on the substrate. In addition, as the electrochemical deposition process progresses, a part of the electroplating solution output from the liquid outlet 15 will flow to the other side of the manifold through the liquid return pipe 20, so that the electroplating solution is evenly distributed on both sides of the manifold.
本公开实施例还提供一种电化学沉积设备,图14为本公开的一些实施例中提供的电化学沉积设备的整体结构示意图,图14为图1a所示的电化学沉积设备的一种具体化实现方案,图15为图14所示的电化学沉积设备的部分结构示意图,如图14和图15所示,该电化学沉积设备包括:具有容纳槽的槽体100、电极结构200、分流板300和基板载具400,分流板300为上述任一实施例中所提供的分流板,基板载具400用于装载待电镀的基板,电极结构200和分流板300设置在容纳槽中,分流板300设置在电极结构200朝向基板的一侧,第一壁位于第二壁远离阳极结构200的一侧。The embodiments of the present disclosure also provide an electrochemical deposition device. FIG. 14 is a schematic diagram of the overall structure of the electrochemical deposition device provided in some embodiments of the disclosure, and FIG. 14 is a specific example of the electrochemical deposition device shown in FIG. 1a. 15 is a schematic diagram of a partial structure of the electrochemical deposition device shown in FIG. 14, as shown in FIG. 14 and FIG. The plate 300 and the substrate carrier 400. The shunt plate 300 is the shunt plate provided in any of the above-mentioned embodiments. The substrate carrier 400 is used to load the substrate to be electroplated. The plate 300 is disposed on the side of the electrode structure 200 facing the substrate, and the first wall is located on the side of the second wall away from the anode structure 200.
在对大尺寸的基板进行电化学沉积工艺时,可以通过调整出液口的分布位置和出液口的大小,从而提高基板上沉积的膜层厚度均一性。When performing an electrochemical deposition process on a large-sized substrate, the distribution position and size of the liquid outlet can be adjusted to improve the uniformity of the thickness of the film deposited on the substrate.
在一些实施例中,电化学沉积设备包括两个电极结构200和与该两个电极结构200一一对应的两个分流板300,分流板300位于相应的电极结构200靠近基板的一侧。这种情况下,电化学沉积设备可以同时对两个基板进行电化学沉积,或者在同一个基板的两个表面同时进行电化学沉积,从而提高生产效率。In some embodiments, the electrochemical deposition apparatus includes two electrode structures 200 and two shunt plates 300 corresponding to the two electrode structures 200 on a one-to-one basis. The shunt plates 300 are located on the side of the corresponding electrode structure 200 close to the substrate. In this case, the electrochemical deposition equipment can perform electrochemical deposition on two substrates at the same time, or perform electrochemical deposition on both surfaces of the same substrate at the same time, thereby improving production efficiency.
在一些实施例中,电化学沉积设备还包括支架800,基板载具400设置在支架800上,并在驱动装置的驱动下进行移动。电化学沉积设备还包括过滤装置600、排液管路700、排气管720、动力源73、监测装置90、辅助槽体93。其中,排液管路700包括直立部711和水平部712,直立部711的入口与容纳槽的排液口连通,直立部711的出口与水平部712的入口连通。排气管720与直立部711的顶部连通。过滤装置600包括过滤入口和过滤出口,过滤入口与排液管路710的水平部712的出口连通,过滤出口与分流板300的进液口连通,过滤装置600用于对电镀液进行过滤。动力源73用于驱动电镀液从排液管路710进入过滤 装置600,并从过滤装置进入分流板300。辅助槽体93具有辅助槽,该辅助槽与容纳槽连通,监测装置90设置在辅助槽中,监测装置具体可以包括温度计91和液位计92,从而分别对电镀液的温度和液位进行监测。In some embodiments, the electrochemical deposition apparatus further includes a support 800, and the substrate carrier 400 is disposed on the support 800 and moves under the driving of the driving device. The electrochemical deposition equipment also includes a filter device 600, a drain pipe 700, an exhaust pipe 720, a power source 73, a monitoring device 90, and an auxiliary tank body 93. Wherein, the drain pipeline 700 includes a vertical portion 711 and a horizontal portion 712, the inlet of the vertical portion 711 is connected with the drain port of the containing tank, and the outlet of the vertical portion 711 is connected with the inlet of the horizontal portion 712. The exhaust pipe 720 communicates with the top of the upright portion 711. The filtering device 600 includes a filtering inlet and a filtering outlet. The filtering inlet is communicated with the outlet of the horizontal portion 712 of the drain pipe 710, and the filtering outlet is communicated with the liquid inlet of the manifold 300. The filtering device 600 is used for filtering the electroplating solution. The power source 73 is used to drive the electroplating solution from the drain line 710 into the filter device 600 and from the filter device into the splitter plate 300. The auxiliary tank body 93 has an auxiliary tank, which is in communication with the holding tank. The monitoring device 90 is arranged in the auxiliary tank. The monitoring device may specifically include a thermometer 91 and a level gauge 92 to monitor the temperature and level of the electroplating solution respectively. .
以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本公开的保护范围。The above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also deemed to be within the protection scope of the present disclosure.

Claims (13)

  1. 一种用于电化学沉积设备中的分流板,所述分流板包括:A shunt plate used in electrochemical deposition equipment, the shunt plate comprising:
    容纳壳体,所述容纳壳体包括:第一壁、与所述第一壁相对设置的第二壁以及连接在所述第一壁与所述第二壁之间的多个侧壁,所述第一壁、所述第二壁和所述多个侧壁围成容纳腔,所述容纳壳体上设置有进液口和多个出液口,所述进液口和所述多个出液口均与所述容纳腔连通,所述多个出液口设置在第一壁上;The containing housing includes: a first wall, a second wall disposed opposite to the first wall, and a plurality of side walls connected between the first wall and the second wall, so The first wall, the second wall and the plurality of side walls enclose a containing cavity, the containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of The liquid outlets are all in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall;
    多个回液管路,所述多个回液管路穿过所述容纳腔,所述多个回液管路的入口设置在所述第一壁上,所述多个回液管路的出口设置在所述第二壁上。A plurality of liquid return pipelines, the plurality of liquid return pipelines pass through the containing cavity, the inlets of the plurality of liquid return pipelines are arranged on the first wall, and the plurality of liquid return pipelines The outlet is provided on the second wall.
  2. 根据权利要求1所述的分流板,其中,所述多个出液口的口径相同,所述多个回液管路的内径相同;所述多个出液口均匀分布,所述多个回液管路均匀分布。The manifold according to claim 1, wherein the diameters of the plurality of liquid outlets are the same, and the inner diameters of the plurality of liquid return pipes are the same; the plurality of liquid outlets are evenly distributed, and the plurality of return The liquid pipes are evenly distributed.
  3. 根据权利要求1所述的分流板,其中,所述分流板划分为多个分区,每个所述分区均设置有均匀分布的多个所述回液管路和均匀分布的多个所述出液口,The manifold according to claim 1, wherein the manifold is divided into a plurality of partitions, and each of the partitions is provided with a plurality of evenly distributed return lines and a plurality of evenly distributed outlets. Liquid port,
    不同分区中的出液口的口径不同,不同分区中的回液管路的内径不同;和/或,The diameters of the liquid outlets in different zones are different, and the inner diameters of the liquid return pipes in different zones are different; and/or,
    不同分区中的出液口的分布密度不同,不同分区中的回液管路的分布密度不同。The distribution density of liquid outlets in different zones is different, and the distribution density of liquid return pipes in different zones is different.
  4. 根据权利要求3所述的分流板,其中,同一个所述分区中,所述出液口的口径小于所述回液管路的内径。3. The manifold according to claim 3, wherein, in the same partition, the diameter of the liquid outlet is smaller than the inner diameter of the liquid return pipeline.
  5. 根据权利要求4所述的分流板,其中,同一个所述分区中,所述回液管路的内径为所述出液口的口径30~60倍。4. The manifold according to claim 4, wherein, in the same partition, the inner diameter of the liquid return pipe is 30-60 times the caliber of the liquid outlet.
  6. 根据权利要求3所述的分流板,其中,所述多个分区包括位于所述分流板中部的中部分区和至少一个环绕所述中部分区的环状分区,The manifold according to claim 3, wherein the plurality of partitions includes a middle section located in the middle of the manifold and at least one ring-shaped section surrounding the middle section,
    所述中部分区的出液口的口径小于所述环状分区的出液口的口径,所述中部分区的回液管路的内径小于所述环状分区的回液管路的内径;和/或,The caliber of the liquid outlet of the middle section is smaller than the caliber of the liquid outlet of the annular zone, and the inner diameter of the liquid return pipeline of the middle zone is smaller than the inner diameter of the liquid return pipeline of the annular zone; and / or,
    所述中部分区的出液口的分布密度大于所述环状分区的出液口的分布密度,所述中部分区的回液管路的分布密度大于所述环状分区的回液管路的分布密度。The distribution density of the liquid outlets of the middle section is greater than the distribution density of the liquid outlets of the annular section, and the distribution density of the liquid return pipes in the middle section is greater than the liquid return pipes of the annular section The distribution density.
  7. 根据权利要求6所述的分流板,其中,所述中部分区的出液口的口径位于所述环状分区的出液口的口径的0.2~0.5倍,所述中部分区的回液管路的内径为所述环状分区的回液管路的内径的0.3~0.6倍。The manifold according to claim 6, wherein the diameter of the liquid outlet of the middle section is 0.2-0.5 times the diameter of the liquid outlet of the annular section, and the liquid return pipe of the middle section The inner diameter of the passage is 0.3 to 0.6 times the inner diameter of the liquid return pipe of the annular zone.
  8. 根据权利要求6所述的分流板,其中,所述中部分区沿第一方向的尺寸为所述环状分区沿所述第一方向的尺寸的1~3倍,所述中部分区沿第二方向的尺寸为所述环状分区沿所述第二方向的尺寸的1~3倍。The splitter plate according to claim 6, wherein the size of the middle section in the first direction is 1 to 3 times the size of the ring-shaped section in the first direction, and the middle section is along the first direction. The size in the two directions is 1 to 3 times the size of the ring-shaped partition along the second direction.
  9. 根据权利要求1至4中任意一项所述的分流板,其中,所述容纳腔内设置有分隔壁,所述分隔壁将所述容纳腔分隔为互不连通的多个容纳子腔,每个所述容纳子腔均与至少一个所述进液口和均匀分布的多个所述出液口连通。The manifold according to any one of claims 1 to 4, wherein a partition wall is provided in the accommodating cavity, and the partition wall divides the accommodating cavity into a plurality of accommodating sub-cavities that are not connected to each other, each Each of the accommodating sub-cavities is in communication with at least one of the liquid inlets and a plurality of evenly distributed liquid outlets.
  10. 根据权利要求1至4中任意一项所述的分流板,其中,所述进液口设置在所述容纳壳体的侧壁上,所述分流板还包括设置在所述容纳腔中的至少一个匀流挡板,所述匀流挡板将所述容纳腔分隔为主腔和至少一个均压腔,所述进液口与所述均压腔连通,所述出液口与所述主腔连通,所述回液管路穿过所述主腔, 所述匀流挡板上设置有均匀分布的多个通孔,所述均压腔与所述主腔通过所述匀流挡板上的所述通孔连通。The flow dividing plate according to any one of claims 1 to 4, wherein the liquid inlet is provided on the side wall of the containing housing, and the flow dividing plate further comprises at least one provided in the containing cavity A uniform flow baffle that separates the containing chamber into a main cavity and at least one pressure equalization chamber, the liquid inlet is in communication with the pressure equalization cavity, and the liquid outlet is connected to the main The cavity is in communication, the liquid return pipeline passes through the main cavity, the uniform flow baffle is provided with a plurality of uniformly distributed through holes, and the pressure equalization cavity and the main cavity pass through the uniform flow baffle The through holes on the upper part communicate with each other.
  11. 根据权利要求10所述的分流板,其中,所述多个侧壁包括相对的第一侧壁和第二侧壁,所述第一侧壁和所述第二侧壁上均设置有所述进液口,所述容纳腔中靠近所述第一侧壁的位置和所述第二侧壁的位置均设置有两个所述匀流挡板,以将所述容纳腔分隔为一个所述主腔和四个所述均压腔,The diverter plate according to claim 10, wherein the plurality of side walls comprise opposite first side walls and second side walls, and the first side wall and the second side wall are both provided with the In the liquid inlet, two of the uniform flow baffles are provided in the position close to the first side wall and the position of the second side wall in the accommodating cavity, so as to divide the accommodating cavity into one The main cavity and the four pressure equalizing cavities,
    在所述主腔的同一侧,靠近所述进液口的匀流挡板上的通孔孔径大于远离所述进液口的匀流挡板上的通孔孔径,靠近所述进液口的匀流挡板上的通孔分布密度小于远离所述进液口的匀流挡板上的通孔的分布密度。On the same side of the main cavity, the diameter of the through hole on the uniform flow baffle near the liquid inlet is larger than the diameter of the through hole on the uniform flow baffle far away from the liquid inlet. The distribution density of the through holes on the uniform flow baffle is smaller than the distribution density of the through holes on the uniform flow baffle far from the liquid inlet.
  12. 根据权利要求1至4中任意一项所述的分流板,其中,每个所述回流孔周围均设置有与其相邻的多个出液口,对于至少一部分数量的回液管路,所述回液管路周围的多个出液口的中心连线构成四边形、五边形或六边形。The manifold according to any one of claims 1 to 4, wherein a plurality of liquid outlets adjacent to each of the return holes are arranged around each of the return holes, and for at least a part of the number of return lines, the The central connection of the multiple liquid outlets around the liquid return pipeline forms a quadrilateral, pentagonal or hexagonal shape.
  13. 一种电化学沉积设备,包括:容纳槽、电极结构、分流板和基板载具,所述分流板为权利要求1至12中任意一项所述的分流板,所述基板载具用于装载待电镀的基板,所述电极结构和所述分流板设置在所述容纳槽中,所述分流板设置在所述电极结构朝向所述基板的一侧,所述第一壁位于所述第二壁远离所述阳极结构的一侧。An electrochemical deposition equipment, comprising: a containing tank, an electrode structure, a shunt plate, and a substrate carrier, the shunt plate is the shunt plate according to any one of claims 1 to 12, and the substrate carrier is used for loading For the substrate to be electroplated, the electrode structure and the shunt plate are arranged in the receiving groove, the shunt plate is arranged on the side of the electrode structure facing the substrate, and the first wall is located at the second The side of the wall away from the anode structure.
PCT/CN2021/087394 2020-05-09 2021-04-15 Spreader plate and electrochemical deposition device WO2021227762A1 (en)

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