WO2021227762A1 - Spreader plate and electrochemical deposition device - Google Patents
Spreader plate and electrochemical deposition device Download PDFInfo
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- WO2021227762A1 WO2021227762A1 PCT/CN2021/087394 CN2021087394W WO2021227762A1 WO 2021227762 A1 WO2021227762 A1 WO 2021227762A1 CN 2021087394 W CN2021087394 W CN 2021087394W WO 2021227762 A1 WO2021227762 A1 WO 2021227762A1
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- liquid
- wall
- cavity
- outlets
- liquid return
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- 238000004070 electrodeposition Methods 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 229
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000004891 communication Methods 0.000 claims abstract description 10
- 238000009826 distribution Methods 0.000 claims description 39
- 238000005192 partition Methods 0.000 claims description 35
- 230000004308 accommodation Effects 0.000 abstract 6
- 238000009713 electroplating Methods 0.000 description 18
- 230000005684 electric field Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000001914 filtration Methods 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000012806 monitoring device Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/06—Filtering particles other than ions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
Definitions
- the present disclosure relates to the field of production of display products, and in particular to a shunt plate and electrochemical deposition equipment.
- the electrochemical deposition process is a low-cost chemical film forming method, which can deposit a metal layer with a thickness of 2-20um with a relatively low resistance value.
- the current electrochemical deposition equipment is generally suitable for electrochemical deposition on glass substrates with a small size, while for glass substrates with a larger size, the problem of uneven film formation is prone to occur.
- the present disclosure provides a shunt plate used in an electrochemical deposition device, the shunt plate comprising:
- the containing housing includes: a first wall, a second wall disposed opposite to the first wall, and a plurality of side walls connected between the first wall and the second wall, so The first wall, the second wall and the plurality of side walls enclose a containing cavity, the containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of The liquid outlets are all in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall;
- a plurality of liquid return pipelines the plurality of liquid return pipelines pass through the containing cavity, the inlets of the plurality of liquid return pipelines are arranged on the first wall, and the plurality of liquid return pipelines The outlet is provided on the second wall.
- the calibers of the plurality of liquid outlets are the same, and the inner diameters of the plurality of liquid return pipelines are the same; the plurality of liquid outlets are evenly distributed, and the plurality of liquid return pipelines are evenly distributed.
- the distribution plate is divided into a plurality of partitions, and each of the partitions is provided with a plurality of the liquid return pipelines and a plurality of the liquid outlets evenly distributed,
- the diameters of the liquid outlets in different zones are different, and the inner diameters of the liquid return pipes in different zones are different; and/or,
- the distribution density of liquid outlets in different zones is different, and the distribution density of liquid return pipes in different zones is different.
- the diameter of the liquid outlet is smaller than the inner diameter of the liquid return pipeline.
- the inner diameter of the liquid return pipeline is 30-60 times the caliber of the liquid outlet.
- the plurality of partitions includes a middle section located in the middle of the splitter plate and at least one ring-shaped section surrounding the middle section,
- the caliber of the liquid outlet of the middle section is smaller than the caliber of the liquid outlet of the annular zone, and the inner diameter of the liquid return pipeline of the middle zone is smaller than the inner diameter of the liquid return pipeline of the annular zone; and / or,
- the distribution density of the liquid outlets of the middle section is greater than the distribution density of the liquid outlets of the annular section, and the distribution density of the liquid return pipes in the middle section is greater than the liquid return pipes of the annular section The distribution density.
- the diameter of the liquid outlet of the middle section is 0.2 to 0.5 times the diameter of the liquid outlet of the annular section
- the inner diameter of the liquid return pipeline of the middle section is the 0.3 to 0.6 times the inner diameter of the liquid return pipe of the annular zone.
- the size of the middle region in the first direction is 1 to 3 times the size of the ring-shaped partition in the first direction, and the size of the middle region in the second direction is the same.
- the size of the ring-shaped partition along the second direction is 1 to 3 times.
- a partition wall is provided in the accommodating cavity, and the partition wall divides the accommodating cavity into a plurality of accommodating subcavities that are not connected to each other, and each accommodating subcavity is connected to at least one of the accommodating subcavities.
- the liquid inlet is communicated with a plurality of evenly distributed liquid outlets.
- the liquid inlet is arranged on the side wall of the containing shell
- the flow dividing plate further includes at least one uniform flow baffle arranged in the containing cavity, the uniform flow baffle
- the accommodating cavity is divided into a main cavity and at least one pressure equalization cavity, the liquid inlet is in communication with the pressure equalization cavity, the liquid outlet is in communication with the main cavity, and the liquid return pipeline passes through the In the main cavity
- the uniform flow baffle is provided with a plurality of uniformly distributed through holes, and the pressure equalization cavity is communicated with the main cavity through the through holes on the uniform flow baffle.
- the plurality of side walls includes a first side wall and a second side wall opposite to each other, the first side wall and the second side wall are both provided with the liquid inlet, the In the accommodating cavity near the first side wall and the second side wall, two uniform flow baffles are provided to separate the accommodating cavity into one main cavity and four sub-cavities.
- the pressure equalizing cavity
- the diameter of the through hole on the uniform flow baffle near the liquid inlet is larger than the diameter of the through hole on the uniform flow baffle far away from the liquid inlet.
- the distribution density of the through holes on the uniform flow baffle is smaller than the distribution density of the through holes on the uniform flow baffle far from the liquid inlet.
- each of the return holes is provided with a plurality of liquid outlets adjacent to it.
- the plurality of liquid outlets around the liquid return pipe are The center line forms a quadrilateral, pentagon or hexagon.
- the embodiments of the present disclosure also provide an electrochemical deposition device, including: a receiving tank, an electrode structure, a shunt plate, and a substrate carrier, the shunt plate is the shunt plate provided in the above embodiment, and the substrate carrier is used for loading For the substrate to be electroplated, the electrode structure and the shunt plate are arranged in the receiving groove, the shunt plate is arranged on the side of the electrode structure facing the substrate, and the first wall is located at the second The side of the wall away from the anode structure.
- Fig. 1a is a perspective view of a partial structure of an electrochemical deposition device in which a splitter plate provided in some embodiments of the present disclosure is located;
- Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure
- Fig. 2 is a front view of a manifold provided in some embodiments of the present disclosure
- Figure 3 is one of the cross-sectional views taken along line B-B in Figure 1b;
- Figure 4 is a cross-sectional view taken along the line I-I in Figure 2;
- Fig. 5 is a partial schematic diagram of the P area in Fig. 2;
- Figure 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline
- Figure 7 is the second cross-sectional view taken along line B-B in Figure 1b;
- Figure 8 is the third cross-sectional view taken along line B-B in Figure 1b;
- FIG. 9 is a perspective view of a splitter plate provided in some other embodiments of the present disclosure.
- FIG. 10 is a front view of a splitter plate provided in some other embodiments of the present disclosure.
- Figure 11 is one of the cross-sectional views taken along line C-C in Figure 9;
- Figure 12 is a cross-sectional view taken along line J-J in Figure 10;
- Figure 13 is one of the cross-sectional views taken along line C-C in Figure 9;
- FIG. 14 is a schematic diagram of the overall structure of an electrochemical deposition device provided in some embodiments of the present disclosure.
- FIG. 15 is a schematic diagram of a part of the structure of the electrochemical deposition apparatus shown in FIG. 14.
- FIG. 1a is a perspective view of the electrochemical deposition equipment where the shunt plate provided in some embodiments of the present disclosure is located.
- the electrochemical deposition The equipment includes: a tank body 100 with a receiving groove, an electrode structure 200, a shunt plate 300, and a substrate carrier 400.
- the substrate carrier 400 is used to load the substrate 500 to be electroplated.
- the electrode structure 200 and the shunt plate 300 are arranged in the receiving groove.
- the shunt plate 300 is disposed on the side of the electrode structure 200 facing the substrate 500.
- Fig. 1b is a perspective view of a shunt plate provided in some embodiments of the present disclosure
- Fig. 2 is a front view of a shunt plate provided in some embodiments of the present disclosure
- Fig. 3 is one of the cross-sectional views along the line BB in Fig. 1b
- 4 is a cross-sectional view taken along the line II in FIG. 2, as shown in FIG. 1 b to FIG. 4, the flow dividing plate includes: an accommodating housing 10 and a plurality of liquid return pipes 20.
- the containing housing 10 includes: a first wall 11, a second wall 12 disposed opposite to the first wall 11, and a plurality of side walls 13 connected between the first wall 11 and the second wall 12, the first wall 11 , The second wall 12 and the plurality of side walls 13 enclose a containing cavity, and the containing housing 10 is provided with a liquid inlet 14 and a plurality of liquid outlets 15.
- the liquid inlet 14 and the liquid outlet 15 are both in communication with the containing cavity,
- the liquid outlet 15 is provided on the first wall 11.
- the liquid return pipeline 20 passes through the containing cavity, the inlet of the liquid return pipeline 20 is arranged on the first wall 11, and the outlet of the liquid return pipeline 20 is arranged on the second wall 12, that is, the liquid return pipeline 20 has a through hole.
- the form is set on the containing shell.
- the electrode structure 200, the substrate to be electroplated and the shunt plate are all set in the containing tank, the electrode structure 200 is connected to the anode of the power supply device, and the substrate carrier 400 is connected to the cathode of the power supply device, so that the electrode structure 200 is connected to the cathode of the power supply device.
- An electric field is formed between the substrate 500 and the substrate 500.
- the electroplating solution is introduced into the containing cavity from the liquid inlet 14 of the manifold and is output from the liquid outlet 15.
- the liquid return port is used to allow the electroplating liquid on both sides of the manifold to pass through the manifold to circulate.
- the metal ions in the electroplating solution are deposited on the substrate to form a metal film layer. Since the electroplating solution is output from the liquid outlet 15, when the electrochemical deposition process is performed on a large-sized substrate, the distribution position of the liquid outlet 15 and the size of the liquid outlet 15 can be adjusted to improve the deposition on the substrate. The film thickness uniformity.
- the liquid outlets 15 are evenly distributed, and the multiple liquid return pipes 20 are evenly distributed.
- the diameters of the multiple liquid outlets 15 are the same.
- the inner diameter is also the same, so that the flow rate of the electroplating solution output from different positions is the same, and in the case of a uniform electric field, the uniformity of the deposited film on the substrate is improved.
- FIG. 5 is a partial schematic diagram of the P area in FIG. 2. As shown in FIG. In other words, the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a hexagon. Of course, the liquid outlets 15 can also be distributed in other ways.
- FIG. 6 is a schematic diagram of the other two positional relationships between the liquid outlet and the liquid return pipeline. As shown in FIG. 6, there are multiple liquid outlets around the liquid return pipeline 20. The central line of 15 can also form a pentagon or a quadrilateral.
- the center connection of the plurality of liquid outlets 15 around the liquid return pipeline 20 forms a polygon such as a quadrilateral, pentagon or hexagon
- the center of the inlet of the liquid return pipeline is located at the center of the polygon, thus,
- the shunt plate is placed in the containing tank for electrochemical deposition, the distribution of metal ions in the electroplating solution on the side of the polygon is more uniform, so that the distribution of the film deposited on the substrate and the area corresponding to the polygon is more uniform.
- the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20.
- the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15 so that a larger number of liquid outlets 15 can be provided, thereby improving the uniformity of the thickness of the film deposited on the substrate.
- the liquid inlet 14 is arranged on the side wall of the containing housing 10, and the distribution plate further includes at least one uniform flow baffle 30 arranged in the containing cavity, and the uniform flow baffle 30 will accommodate
- the chamber is divided into a main chamber S1 and at least one pressure equalizing chamber S2, the liquid inlet 14 is connected to the equalizing chamber S2, the liquid outlet 15 is connected to the main chamber S1, the liquid return pipeline 20 passes through the main chamber, and the uniform flow baffle 30
- a plurality of evenly distributed through holes V are arranged on the upper part, and the pressure equalization cavity S2 and the main cavity S1 are communicated through the through holes V on the uniform flow baffle.
- the liquid pressure near the liquid inlet 14 (position A in FIG. 3) is relatively high, and the liquid pressure at a position far away from the liquid inlet 14 (position a in FIG. 3) is relatively high. small.
- the pressure distribution of the electroplating solution can be made more uniform.
- the number of the liquid inlet 14 is multiple, and the multiple side walls of the distribution plate include a first side wall 131 and a second side wall 132 opposite to each other.
- the first side wall 131 and the second side wall 132 are Both are provided with a liquid inlet 14.
- the first side wall 131 and the second side wall 132 are each provided with three liquid inlets 14.
- FIG. 7 is the second cross-sectional view taken along line BB in FIG. 1b. As shown in FIG. 7, in other embodiments, two even positions are provided in the accommodating cavity near the first side wall 131 and the second side wall 132.
- the flow baffle plate 30 thus divides the containing chamber into a main chamber S1 and four pressure equalizing chambers S2. Wherein, on the same side of the main chamber S1 (upper side or lower side in FIG.
- the diameter of the through hole V on the uniform flow baffle near the liquid inlet 14 is larger than that of the uniform flow baffle 30 far away from the liquid inlet 14
- the diameter of the upper through holes V, the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 is smaller than the distribution density of the through holes V on the uniform flow baffle 30 far away from the liquid inlet 14.
- the uniform flow baffle 30 in FIG. 7 can also be set to other numbers. It only needs to be on the same side of the main chamber S1.
- the diameter of the through holes V on the uniform flow baffle 30 of the liquid inlet 14 and the distribution density of the through holes V on the uniform flow baffle 30 close to the liquid inlet 14 are smaller than those on the uniform flow baffle 30 far away from the liquid inlet 14 The distribution density of the through holes V is sufficient.
- the aperture V of the through hole V on the uniform flow baffle close to the liquid inlet 14 is 1.5 to 4 times the aperture of the through hole V on the uniform flow baffle 30 far from the liquid inlet 14; in addition, the aperture near the liquid inlet 14
- the distance between two adjacent through holes V on the uniform flow baffle 30 is d1
- the distance between two adjacent through holes V on the uniform flow baffle 30 far away from the liquid inlet 14 is d2, where, d1 is 2 to 4 times of d2, and the distance between two adjacent through holes V is the shortest distance between two through holes V.
- Fig. 8 is the third cross-sectional view taken along line B-B in Fig. 1b.
- the shunt plate shown in Fig. 8 has a similar structure to the shunt plate shown in Fig. 3, and only the difference between the two structures will be described below.
- a partition wall 40 is provided in the accommodating cavity, and the partition wall 40 divides the accommodating cavity into a plurality of accommodating sub-cavities that are not connected to each other (for example, the two partition walls 40 in FIG. 8 divide the accommodating cavity into three Each containing sub-cavity), each containing sub-cavity is connected with at least one liquid inlet 14 and a plurality of liquid outlets 15 evenly distributed.
- the liquid intake of the containing subcavity corresponding to the area can be increased, thereby improving the uniformity of the deposited film on the substrate.
- two partition walls 40 divide the accommodating cavity into three accommodating subcavities on the left, center, and right.
- the accommodating subcavity in the middle includes: a first main cavity portion Sa1 and two The second main cavity Sa2.
- the first main cavity portion Sa1 is a rectangular cavity
- the first main cavity portion Sa1 is a part of the main cavity S1 and covers at least the center of the manifold
- a portion of the second main cavity portion Sa2 is a part of the main cavity S1
- the second main cavity portion Sa2 is a part of the main cavity S1.
- the other part of the main chamber Sa2 is a part of the equalizing chamber S2.
- the length of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1
- the width of the first main cavity portion Sa1 is 1/4 to 3/4 of the length of the main cavity S1.
- Figure 9 is a perspective view of a manifold provided in other embodiments of the present disclosure
- Figure 10 is a front view of a manifold provided in other embodiments of the present disclosure
- Figure 11 is one of the cross-sectional views along line CC in Figure 9
- Figure 12 is a cross-sectional view along line JJ in Figure 10.
- the manifold shown in Figure 9 has a similar structure to the manifold shown in Figure 1b, and also includes a containing housing 10 and a plurality of liquid return pipes 20.
- the containing housing 10 is provided with The plurality of liquid inlets 14 and the plurality of liquid outlets 15 further include a uniform flow baffle 30 with through holes. Only the difference between the two structures will be described below.
- the manifold is divided into a plurality of partitions A1 and A2, and each partition A1/A2 is provided with a plurality of evenly distributed return lines 20 and a plurality of evenly distributed outlets.
- the liquid port 15 has different calibers of the liquid outlet 15 in different zones, and the inner diameter of the liquid return pipe 20 in different zones is different.
- the diameters of the liquid outlets 15 in different zones are different, the speeds of the electroplating solution sprayed from the liquid outlets 15 in different zones are different.
- the diameter of the liquid outlet 15 in the partition corresponding to the position with larger electric field intensity can be set to be smaller, and the diameter of the liquid outlet 15 in the partition corresponding to the position with lower electric field strength can be set to be smaller.
- the aperture is set to be larger, so that the thickness of the film deposited at different positions on the substrate is more uniform.
- the diameter of the liquid outlet 15 is smaller than the inner diameter of the liquid return pipe 20.
- the inner diameter of the liquid return pipe 20 is 30-60 times the caliber of the liquid outlet 15.
- tip discharge may occur at the edge of the electrode structure, resulting in a larger electric field intensity in the edge area of the electrode structure and a smaller electric field intensity in the middle area, which in turn leads to a thicker film deposited in the middle area of the substrate. Smaller, the thickness of the film deposited on the edge area of the substrate is larger.
- the multiple partitions of the manifold include a middle section A1 and at least one annular section A2 surrounding the middle section A1, wherein the liquid outlet of the middle section A1
- the caliber of 15 is smaller than the caliber of the liquid outlet 15 of the annular zone A2
- the caliber of the liquid return port of the middle section A1 is smaller than the caliber of the liquid return hole of the annular zone A2, so that the middle section A1 sprays
- the increase in the speed of the electroplating solution is beneficial to increase the thickness of the film deposited in the central region of the substrate.
- the distribution density of the liquid outlets 15 in the middle section A1 is greater than the distribution density of the liquid outlets 15 in the annular section S2, and the distribution density of the liquid return pipe 20 in the middle section A1 is greater than that of the annular section.
- the distribution density of the liquid return pipe 20 of A2 increases the total amount of electroplating solution sprayed from the central area A1, thereby increasing the thickness of the film deposited in the central area of the substrate.
- the above two methods can also be combined to make the diameter of the liquid outlet 15 of the middle section A1 smaller than that of the liquid outlet 15 of the annular section A2, and the diameter of the liquid return opening of the middle section A1 is smaller than that of the annular section
- the diameter of the liquid return hole of A2 makes the distribution density of the liquid outlet 15 of the middle section A1 greater than the distribution density of the liquid outlet 15 of the annular section A2, and the distribution density of the liquid return pipe 20 of the middle section A1 is greater than The distribution density of the liquid return line 20 in the annular zone A2.
- the diameter of the liquid outlet 15 in the middle section A1 is 0.2 to 0.5 times the diameter of the liquid outlet 15 in the annular section A2; the diameter of the liquid return pipe 20 in the middle section A1 It is 0.3 to 0.6 times of the liquid return line 20 in the annular zone A2.
- the distance between two adjacent liquid outlets 15 is proportional to the diameter of the liquid outlet 15; the distance between two adjacent liquid return pipes 20 is proportional to the inner diameter of the liquid return pipe 20.
- two adjacent liquid outlets 15 refer to two adjacent liquid outlets 15 among the plurality of liquid outlets 15 surrounding the same liquid return pipeline 20.
- the liquid outlets 15 can be arranged in the same way, and the arrangement of the liquid return pipes 20 in different zones can also be the same.
- the central connection of the plurality of liquid outlets 15 around the liquid return pipe 20 forms a quadrilateral, pentagon or hexagon.
- the position of the center of the middle section A1 is basically the same as the position of the center of the splitter plate, and the dimension L11 of the middle section A1 along the first direction is the ring-shaped section A2 along the first direction L12
- the size of the central area A1 along the second direction L21 is 1 to 3 times the size of the ring-shaped area A2 along the second direction L22.
- the first direction is the length direction of the splitter plate, that is, the left-right direction in FIG. 10
- the second direction is the width direction of the splitter plate, that is, the up-down direction in FIG. 10.
- the dimension L12 of the ring-shaped partition A2 in the first direction is: in the first direction, the distance between the inner and outer boundaries of the ring-shaped partition A2, and the dimension L22 of the ring-shaped partition A2 in the second direction is: In the second direction, the distance between the inner boundary and the outer boundary of the ring-shaped partition A2.
- Fig. 13 is the second cross-sectional view taken along the line C-C in Fig. 9.
- Fig. 13 is similar in structure to the splitter plate shown in Fig. 10, and only the difference between the two structures will be described below.
- a partition wall 40 is provided in the accommodating cavity.
- the splitter plate is also divided into a plurality of partitions (for example, the middle part area A1 and the ring-shaped partition A2 surrounding the middle part area A1), each of which is divided into A plurality of evenly distributed liquid return pipes 20 and a plurality of evenly distributed liquid outlets 15 are provided.
- the caliber of the liquid outlet 15 in different zones is different, and the inner diameter of the liquid return pipeline 20 in different zones is different; and/or the distribution density of the liquid outlet 15 in different zones is different, and the liquid return pipeline in different zones The distribution density of 20 is different.
- one of the containing sub-cavities is located covering the middle area A1.
- two partition walls 40 divide the accommodating cavity into three accommodating sub-cavities on the left, middle and right. The remaining part is connected with the liquid inlet 14 on both sides.
- the size relationship between the middle section A1 and the annular section A2, the size relationship of the inner diameter of the liquid return pipe 20 in each section, and the size relationship of the diameter of the liquid outlet 15 in each section are all referred to the above description. I won't repeat it here.
- the uniform flow baffle 30 can also be set to other numbers, which is not limited here.
- the amount of electroplating liquid in the containing cavity is The distribution of metal ions is chaotic, and when the plating solution is output from the outlet 15 on the first wall, the output plating solution is ejected in substantially the same direction, that is, the output direction of the metal ions in the plating solution is basically the same, and the plating solution
- the jetting speed of the liquid is basically the same, which helps to improve the uniformity of the deposited film on the substrate.
- FIG. 14 is a schematic diagram of the overall structure of the electrochemical deposition device provided in some embodiments of the disclosure, and FIG. 14 is a specific example of the electrochemical deposition device shown in FIG. 1a.
- 15 is a schematic diagram of a partial structure of the electrochemical deposition device shown in FIG. 14, as shown in FIG. 14 and FIG.
- the plate 300 and the substrate carrier 400 are used to load the substrate to be electroplated.
- the plate 300 is disposed on the side of the electrode structure 200 facing the substrate, and the first wall is located on the side of the second wall away from the anode structure 200.
- the distribution position and size of the liquid outlet can be adjusted to improve the uniformity of the thickness of the film deposited on the substrate.
- the electrochemical deposition apparatus includes two electrode structures 200 and two shunt plates 300 corresponding to the two electrode structures 200 on a one-to-one basis.
- the shunt plates 300 are located on the side of the corresponding electrode structure 200 close to the substrate.
- the electrochemical deposition equipment can perform electrochemical deposition on two substrates at the same time, or perform electrochemical deposition on both surfaces of the same substrate at the same time, thereby improving production efficiency.
- the electrochemical deposition apparatus further includes a support 800, and the substrate carrier 400 is disposed on the support 800 and moves under the driving of the driving device.
- the electrochemical deposition equipment also includes a filter device 600, a drain pipe 700, an exhaust pipe 720, a power source 73, a monitoring device 90, and an auxiliary tank body 93.
- the drain pipeline 700 includes a vertical portion 711 and a horizontal portion 712, the inlet of the vertical portion 711 is connected with the drain port of the containing tank, and the outlet of the vertical portion 711 is connected with the inlet of the horizontal portion 712.
- the exhaust pipe 720 communicates with the top of the upright portion 711.
- the filtering device 600 includes a filtering inlet and a filtering outlet.
- the filtering inlet is communicated with the outlet of the horizontal portion 712 of the drain pipe 710, and the filtering outlet is communicated with the liquid inlet of the manifold 300.
- the filtering device 600 is used for filtering the electroplating solution.
- the power source 73 is used to drive the electroplating solution from the drain line 710 into the filter device 600 and from the filter device into the splitter plate 300.
- the auxiliary tank body 93 has an auxiliary tank, which is in communication with the holding tank.
- the monitoring device 90 is arranged in the auxiliary tank.
- the monitoring device may specifically include a thermometer 91 and a level gauge 92 to monitor the temperature and level of the electroplating solution respectively. .
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Abstract
Description
Claims (13)
- 一种用于电化学沉积设备中的分流板,所述分流板包括:A shunt plate used in electrochemical deposition equipment, the shunt plate comprising:容纳壳体,所述容纳壳体包括:第一壁、与所述第一壁相对设置的第二壁以及连接在所述第一壁与所述第二壁之间的多个侧壁,所述第一壁、所述第二壁和所述多个侧壁围成容纳腔,所述容纳壳体上设置有进液口和多个出液口,所述进液口和所述多个出液口均与所述容纳腔连通,所述多个出液口设置在第一壁上;The containing housing includes: a first wall, a second wall disposed opposite to the first wall, and a plurality of side walls connected between the first wall and the second wall, so The first wall, the second wall and the plurality of side walls enclose a containing cavity, the containing shell is provided with a liquid inlet and a plurality of liquid outlets, the liquid inlet and the plurality of The liquid outlets are all in communication with the containing cavity, and the plurality of liquid outlets are arranged on the first wall;多个回液管路,所述多个回液管路穿过所述容纳腔,所述多个回液管路的入口设置在所述第一壁上,所述多个回液管路的出口设置在所述第二壁上。A plurality of liquid return pipelines, the plurality of liquid return pipelines pass through the containing cavity, the inlets of the plurality of liquid return pipelines are arranged on the first wall, and the plurality of liquid return pipelines The outlet is provided on the second wall.
- 根据权利要求1所述的分流板,其中,所述多个出液口的口径相同,所述多个回液管路的内径相同;所述多个出液口均匀分布,所述多个回液管路均匀分布。The manifold according to claim 1, wherein the diameters of the plurality of liquid outlets are the same, and the inner diameters of the plurality of liquid return pipes are the same; the plurality of liquid outlets are evenly distributed, and the plurality of return The liquid pipes are evenly distributed.
- 根据权利要求1所述的分流板,其中,所述分流板划分为多个分区,每个所述分区均设置有均匀分布的多个所述回液管路和均匀分布的多个所述出液口,The manifold according to claim 1, wherein the manifold is divided into a plurality of partitions, and each of the partitions is provided with a plurality of evenly distributed return lines and a plurality of evenly distributed outlets. Liquid port,不同分区中的出液口的口径不同,不同分区中的回液管路的内径不同;和/或,The diameters of the liquid outlets in different zones are different, and the inner diameters of the liquid return pipes in different zones are different; and/or,不同分区中的出液口的分布密度不同,不同分区中的回液管路的分布密度不同。The distribution density of liquid outlets in different zones is different, and the distribution density of liquid return pipes in different zones is different.
- 根据权利要求3所述的分流板,其中,同一个所述分区中,所述出液口的口径小于所述回液管路的内径。3. The manifold according to claim 3, wherein, in the same partition, the diameter of the liquid outlet is smaller than the inner diameter of the liquid return pipeline.
- 根据权利要求4所述的分流板,其中,同一个所述分区中,所述回液管路的内径为所述出液口的口径30~60倍。4. The manifold according to claim 4, wherein, in the same partition, the inner diameter of the liquid return pipe is 30-60 times the caliber of the liquid outlet.
- 根据权利要求3所述的分流板,其中,所述多个分区包括位于所述分流板中部的中部分区和至少一个环绕所述中部分区的环状分区,The manifold according to claim 3, wherein the plurality of partitions includes a middle section located in the middle of the manifold and at least one ring-shaped section surrounding the middle section,所述中部分区的出液口的口径小于所述环状分区的出液口的口径,所述中部分区的回液管路的内径小于所述环状分区的回液管路的内径;和/或,The caliber of the liquid outlet of the middle section is smaller than the caliber of the liquid outlet of the annular zone, and the inner diameter of the liquid return pipeline of the middle zone is smaller than the inner diameter of the liquid return pipeline of the annular zone; and / or,所述中部分区的出液口的分布密度大于所述环状分区的出液口的分布密度,所述中部分区的回液管路的分布密度大于所述环状分区的回液管路的分布密度。The distribution density of the liquid outlets of the middle section is greater than the distribution density of the liquid outlets of the annular section, and the distribution density of the liquid return pipes in the middle section is greater than the liquid return pipes of the annular section The distribution density.
- 根据权利要求6所述的分流板,其中,所述中部分区的出液口的口径位于所述环状分区的出液口的口径的0.2~0.5倍,所述中部分区的回液管路的内径为所述环状分区的回液管路的内径的0.3~0.6倍。The manifold according to claim 6, wherein the diameter of the liquid outlet of the middle section is 0.2-0.5 times the diameter of the liquid outlet of the annular section, and the liquid return pipe of the middle section The inner diameter of the passage is 0.3 to 0.6 times the inner diameter of the liquid return pipe of the annular zone.
- 根据权利要求6所述的分流板,其中,所述中部分区沿第一方向的尺寸为所述环状分区沿所述第一方向的尺寸的1~3倍,所述中部分区沿第二方向的尺寸为所述环状分区沿所述第二方向的尺寸的1~3倍。The splitter plate according to claim 6, wherein the size of the middle section in the first direction is 1 to 3 times the size of the ring-shaped section in the first direction, and the middle section is along the first direction. The size in the two directions is 1 to 3 times the size of the ring-shaped partition along the second direction.
- 根据权利要求1至4中任意一项所述的分流板,其中,所述容纳腔内设置有分隔壁,所述分隔壁将所述容纳腔分隔为互不连通的多个容纳子腔,每个所述容纳子腔均与至少一个所述进液口和均匀分布的多个所述出液口连通。The manifold according to any one of claims 1 to 4, wherein a partition wall is provided in the accommodating cavity, and the partition wall divides the accommodating cavity into a plurality of accommodating sub-cavities that are not connected to each other, each Each of the accommodating sub-cavities is in communication with at least one of the liquid inlets and a plurality of evenly distributed liquid outlets.
- 根据权利要求1至4中任意一项所述的分流板,其中,所述进液口设置在所述容纳壳体的侧壁上,所述分流板还包括设置在所述容纳腔中的至少一个匀流挡板,所述匀流挡板将所述容纳腔分隔为主腔和至少一个均压腔,所述进液口与所述均压腔连通,所述出液口与所述主腔连通,所述回液管路穿过所述主腔, 所述匀流挡板上设置有均匀分布的多个通孔,所述均压腔与所述主腔通过所述匀流挡板上的所述通孔连通。The flow dividing plate according to any one of claims 1 to 4, wherein the liquid inlet is provided on the side wall of the containing housing, and the flow dividing plate further comprises at least one provided in the containing cavity A uniform flow baffle that separates the containing chamber into a main cavity and at least one pressure equalization chamber, the liquid inlet is in communication with the pressure equalization cavity, and the liquid outlet is connected to the main The cavity is in communication, the liquid return pipeline passes through the main cavity, the uniform flow baffle is provided with a plurality of uniformly distributed through holes, and the pressure equalization cavity and the main cavity pass through the uniform flow baffle The through holes on the upper part communicate with each other.
- 根据权利要求10所述的分流板,其中,所述多个侧壁包括相对的第一侧壁和第二侧壁,所述第一侧壁和所述第二侧壁上均设置有所述进液口,所述容纳腔中靠近所述第一侧壁的位置和所述第二侧壁的位置均设置有两个所述匀流挡板,以将所述容纳腔分隔为一个所述主腔和四个所述均压腔,The diverter plate according to claim 10, wherein the plurality of side walls comprise opposite first side walls and second side walls, and the first side wall and the second side wall are both provided with the In the liquid inlet, two of the uniform flow baffles are provided in the position close to the first side wall and the position of the second side wall in the accommodating cavity, so as to divide the accommodating cavity into one The main cavity and the four pressure equalizing cavities,在所述主腔的同一侧,靠近所述进液口的匀流挡板上的通孔孔径大于远离所述进液口的匀流挡板上的通孔孔径,靠近所述进液口的匀流挡板上的通孔分布密度小于远离所述进液口的匀流挡板上的通孔的分布密度。On the same side of the main cavity, the diameter of the through hole on the uniform flow baffle near the liquid inlet is larger than the diameter of the through hole on the uniform flow baffle far away from the liquid inlet. The distribution density of the through holes on the uniform flow baffle is smaller than the distribution density of the through holes on the uniform flow baffle far from the liquid inlet.
- 根据权利要求1至4中任意一项所述的分流板,其中,每个所述回流孔周围均设置有与其相邻的多个出液口,对于至少一部分数量的回液管路,所述回液管路周围的多个出液口的中心连线构成四边形、五边形或六边形。The manifold according to any one of claims 1 to 4, wherein a plurality of liquid outlets adjacent to each of the return holes are arranged around each of the return holes, and for at least a part of the number of return lines, the The central connection of the multiple liquid outlets around the liquid return pipeline forms a quadrilateral, pentagonal or hexagonal shape.
- 一种电化学沉积设备,包括:容纳槽、电极结构、分流板和基板载具,所述分流板为权利要求1至12中任意一项所述的分流板,所述基板载具用于装载待电镀的基板,所述电极结构和所述分流板设置在所述容纳槽中,所述分流板设置在所述电极结构朝向所述基板的一侧,所述第一壁位于所述第二壁远离所述阳极结构的一侧。An electrochemical deposition equipment, comprising: a containing tank, an electrode structure, a shunt plate, and a substrate carrier, the shunt plate is the shunt plate according to any one of claims 1 to 12, and the substrate carrier is used for loading For the substrate to be electroplated, the electrode structure and the shunt plate are arranged in the receiving groove, the shunt plate is arranged on the side of the electrode structure facing the substrate, and the first wall is located at the second The side of the wall away from the anode structure.
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CN212505127U (en) * | 2020-05-09 | 2021-02-09 | 京东方科技集团股份有限公司 | Flow distribution plate and electrochemical deposition apparatus |
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