WO2021223589A1 - 微波器件的制造设备和制造方法 - Google Patents

微波器件的制造设备和制造方法 Download PDF

Info

Publication number
WO2021223589A1
WO2021223589A1 PCT/CN2021/088271 CN2021088271W WO2021223589A1 WO 2021223589 A1 WO2021223589 A1 WO 2021223589A1 CN 2021088271 W CN2021088271 W CN 2021088271W WO 2021223589 A1 WO2021223589 A1 WO 2021223589A1
Authority
WO
WIPO (PCT)
Prior art keywords
source
axis
layer
metal ions
manufacturing
Prior art date
Application number
PCT/CN2021/088271
Other languages
English (en)
French (fr)
Inventor
杨志刚
王志建
郭久林
Original Assignee
武汉光谷创元电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉光谷创元电子有限公司 filed Critical 武汉光谷创元电子有限公司
Priority to US17/922,169 priority Critical patent/US20230167541A1/en
Publication of WO2021223589A1 publication Critical patent/WO2021223589A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type

Definitions

  • the invention relates to a manufacturing equipment and a manufacturing method of a microwave device, in particular to a device and a method for metalizing the surface of an insulating substrate of a microwave device.
  • Microwave devices refer to devices that work in the microwave band (frequency 300-300000 MHz), including microwave oscillators, power amplifiers, mixers, detectors, filters, antenna elements or mobile phone antennas, etc., and are widely used in aerospace , Radar, electronic countermeasures, broadcasting and communication systems and other electronic equipment.
  • the filter is a frequency selection device that can only pass useful signals and effectively suppress useless signals to solve the problem of interference between different frequency bands and different forms of communication systems.
  • the higher the order of the filter the more functional electronic components per unit area, the better the performance, and the greater the difficulty of manufacturing. How to make the filter size of the same order smaller or make the filter order of the same size higher to improve the performance of the filter has become a hot issue in industry research.
  • the cavity filter adopts a resonant cavity structure, and one cavity can be equivalent to an inductance and parallel capacitor to form a resonant stage to realize the filtering function.
  • the cavity filter has firm structure, small size, stable and reliable performance, moderate Q value, good heat dissipation, and is easy to realize high-order filters, so it is widely used in communication base stations.
  • a typical cavity filter 60 includes a bottom surface 61 and a side surface 62. A number of solid or hollow resonant columns 63 are provided at the bottom.
  • the wall 64 is provided with a slot 65 to realize the communication between the resonant cavities.
  • the cavity filter mainly has the following two requirements: the material has good rigidity and high temperature resistance; the surface metal layer has low roughness and high bonding force.
  • the insulating substrate of the cavity filter usually includes high molecular polymer materials such as PEI, PI, PPS, LCP, ABS, etc., which have a higher glass transition temperature T g and a lower thermal expansion coefficient CTE.
  • the plastic cavity filter based on these materials has the advantages of lightness, good uniformity, low D k and D f , easy processing, high debugging efficiency, suitable for integrated design, etc., and has good application prospects.
  • high molecular polymer materials can also be used together with inorganic fillers such as glass fibers, ceramics, and minerals.
  • the roughness of the surface metal layer determines the signal reflection, oscillation, and insertion loss performance
  • the bonding force affects the peeling of the metal layer, and further affects the stability of the filter performance.
  • the following processes are mainly used to metalize the surface of the cavity filter: first roughen it with a roughening solution and/or sandblasting, then electroless Pd and Cu, or electroless Pd and Ni, and then electroplating Cu ( ⁇ 5 ⁇ m) and Ag ( ⁇ 1 ⁇ m).
  • the chemical treatment used to ensure the bonding force causes a larger roughness (Ra reaches 1.6 ⁇ m)
  • the sandblasting treatment causes a larger roughness, which leads to a larger insertion loss of key electrical properties.
  • the number of channels increases, for example, from 1 channel to 4 channels and 8 channels, the number of resonant columns and partition walls in the cavity will also increase significantly, and the cavity depth can reach more than 15mm.
  • the metal coating will be very thin or even a dead corner in the bottom area of the resonance column, the bottom area of the isolation wall, the bottom area of the cavity wall, etc. That is, the area where there is no metal coating.
  • the present invention is made in view of the above problems, and its purpose is to provide a microwave device manufacturing equipment and manufacturing method, thereby avoiding the above-mentioned defects in the existing process, can achieve full coverage of the metal on the surface of the microwave device, and avoid dead spots. Appeared, and at the same time, a metal layer with high bonding force and low surface roughness can be obtained on the surface of the microwave device.
  • the present invention provides a manufacturing equipment for a microwave device, which includes a jig, the jig includes a base that can rotate about a first axis, and a bracket that can swing about a second axis, and the bracket is connected to the base.
  • a manufacturing equipment for a microwave device which includes a jig, the jig includes a base that can rotate about a first axis, and a bracket that can swing about a second axis, and the bracket is connected to the base.
  • a source for releasing metal ions toward the insulating base
  • a controller which is coupled to the fixture and the source, and is configured to control the movement mode of the fixture and/ Or the angle of the source, so that the insulating substrate receives metal ions from multiple angles, and a metal layer is formed on all surfaces of the insulating substrate.
  • the present invention provides a method for manufacturing a microwave device, which includes: holding an insulating base on a bracket of a clamp, the clamp including a base capable of rotating about a first axis, and a base connected to the base and capable of A bracket that swings around a second axis, where the first axis and the second axis intersect; open the source to release metal ions toward the insulating base; and control the movement mode of the clamp and/or the angle of the source so that the insulating base can be viewed from multiple angles Receiving metal ions, and forming a metal layer on all surfaces of the insulating substrate.
  • the insulating matrix of the microwave device can receive metal ions from multiple angles and form a metal layer on all surfaces.
  • the present invention can realize the complete metal surface of the microwave device. Cover to avoid the emergence of blind spots.
  • the present invention can obtain a metal layer with high bonding force and low surface roughness on the surface of the microwave device, so that the microwave device has better electrical performance and better stability.
  • Figure 1 shows the structure of a cavity filter.
  • Fig. 2 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to the first embodiment.
  • Fig. 3 shows a schematic configuration diagram of a manufacturing equipment of a microwave device according to an alternative of the first embodiment.
  • Fig. 4 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to a second embodiment.
  • Fig. 5 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to a third embodiment.
  • Fig. 6 shows a schematic configuration diagram of a microwave device manufacturing equipment according to an alternative of the third embodiment.
  • Fig. 7 shows the structure of the antenna element, in which Fig. 7(a) shows the front view of the antenna element, Fig. 7(b) shows the top view, Fig. 7(c) shows the rear view, and Fig. 7(d) shows the front view of the antenna element.
  • FIG. 8 shows a schematic view of the cross-sectional change of the insulating substrate of the microwave device in the manufacturing method of the microwave device according to the fourth embodiment, wherein FIG. 8(a) shows the insulating substrate, and FIG. 8(b) shows the first deposited layer, Fig. 8(c) shows the second deposited layer, and Fig. 8(d) shows the thickened layer.
  • FIG. 9 shows a schematic view of the cross-sectional change of the insulating substrate of the microwave device in the manufacturing method of the microwave device according to the fifth embodiment, wherein FIG. 9(a) shows the insulating substrate, FIG. 9(b) shows the doped layer, and FIG. 9(c) shows a plasma deposited layer, FIG. 9(d) shows a sputtered deposited layer, and FIG. 9(e) shows a thickened layer.
  • FIGS. 2 to 6 relate to manufacturing equipment for microwave devices, and respectively show schematic structural views of the manufacturing equipment for microwave devices according to the first, second, and third embodiments.
  • 8 and 9 relate to the manufacturing method of the microwave device, and respectively show the schematic cross-sectional changes of the insulating substrate of the microwave device in the manufacturing method of the microwave device according to the fourth and fifth embodiments.
  • the manufacturing equipment and manufacturing method of the microwave device will be described in detail with reference to these drawings.
  • Fig. 2 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to the first embodiment.
  • the microwave device manufacturing equipment 1 includes a jig 10, a source 20, and a controller 30.
  • the jig 10 includes a base 11 capable of rotating about a first axis A1, and a bracket 12 capable of swinging about a second axis A2.
  • the bracket 12 is connected to the base 11 for holding an insulating base 40 for microwave devices.
  • the first axis A1 intersects the second axis A2.
  • the source 20 is used to release selected types of metal ions toward the insulating substrate 40.
  • the controller 30 is coupled to the clamp 10 and the source 20, and is configured to control the movement mode of the clamp 10 and/or the angle of the source 20, so that the insulating base 40 can receive metal ions from multiple angles and on all surfaces of the insulating base 40 The metal layer is formed.
  • the base 11 includes a cylindrical shaft and a disc on the top of the shaft.
  • the shaft can be formed integrally with the disk, or can be formed separately and then assembled with each other.
  • the first axis A1 is oriented substantially vertically and constitutes the axis of rotation of the shaft.
  • the base 11 can rotate around the first axis A1 in a clockwise or counterclockwise direction in a plan view within a range of ⁇ 0-360°.
  • the bracket 12 is pivotally connected to the upper surface of the disc, for example, can be connected to the disc via a hinge, and can swing around the second axis A2 within a range of 0-180° relative to the upper surface of the disc.
  • the second axis A2 is located on the upper surface of the base and is preferably perpendicular to the first axis A1.
  • the bracket 12 is in the shape of a flat plate, and fixedly holds the insulating base 40 for the microwave device on its supporting surface facing the source 20 so that the cavity of the insulating base 40 is open toward the source 20. Therefore, the metal ions released from the source 20 can be incident on the insulating base 40 in a linear direction, thereby forming a metal layer on the surface of the insulating base 40.
  • the insulating base 40 may be fixed to the bracket 12 by fastening components such as screws, and may also be fixed to the bracket 12 by means of interference fit, snap fit, or the like.
  • the source 20 is positioned opposite to the insulating base 40, and is shown in the figure as being provided with only one vertical source. However, multiple sources 20 may be provided, and may be replaceable. In this way, when a source 20 fails or other types of metal ions need to be used, the source 20 can be replaced with a new source or other types of sources.
  • the source 20 may include a plasma deposition source, and metal ions released from the plasma deposition source are deposited on the surface of the insulating substrate 40 to form a plasma deposition layer.
  • the source 20 may also include an ion implantation source, and metal ions released from the ion implantation source are implanted below the surface of the insulating base 40 to form a doped layer.
  • the source 20 may further include a magnetron sputtering deposition source, and the metal ions released from the magnetron sputtering deposition source are deposited on the surface of the insulating substrate to form a sputtering deposition layer. Both the plasma deposited layer and the sputter deposited layer are part of the metal layer according to the present invention. These sources can be used alone or in combination.
  • the jig 10 and the source 20 each include a driving mechanism not shown.
  • the controller 30 is coupled to the respective driving mechanisms of the clamp 10 and the source 20, and is configured to send driving signals to these driving mechanisms to control the movement of the clamp 10 and the source 20, respectively.
  • the controller 30 can control the orientation angle of the source 20 and the relative movement of various components in the jig 10.
  • the controller 30 can also control various operating parameters of the source 20, such as voltage, current, holding temperature, working time, and so on.
  • the microwave device manufacturing equipment 1 may also include various sensors for detecting the orientation angle of the source 20, the movement speed and rotation angle or swing angle of the base 11 and the bracket 12, the position of the insulating base 40, or the insulating base.
  • the controller 30 receives various signals from these sensors, and performs feedback control on the jig 10 and the source 20 according to these signals, so that a metal layer is formed on all surfaces of the insulating base 40.
  • the insulating base 40 is first held on the bracket 12 of the jig 10, and the jig 10 is moved to a suitable station in the manufacturing equipment. At this time, the insulating base 40 faces the metal ion release port of the source 20 and is separated by an appropriate distance. Then, the source 20 is turned on to release metal ions toward the insulating base 40, and the metal ions are incident on the insulating base 40, thereby forming a metal layer on the surface of the insulating base 40. In this process, the source 20 is kept still, but the base 11 of the clamp 10 is rotated around the first axis A1, and the bracket 12 of the clamp 10 is swung around the second axis A2 at the same time. Of course, it is also possible to stop the base 11 of the clamp 10 after rotating to a certain specific position around the first axis A1, and then make the bracket 12 of the clamp 10 swing around the second axis A2.
  • the insulating base 40 can receive the metal ions released from the source 20 from multiple different angles, and the metal ions can be incident on the insulating base.
  • Various parts on the surface 40 such as the bottom area of the resonance column 63, the bottom area of the partition wall 64, the bottom area of the inner side of the cavity wall, and so on.
  • the timing and angle range of the rotation and swing can be adjusted as needed.
  • Fig. 3 shows a schematic configuration diagram of a manufacturing apparatus according to an alternative of the above-mentioned first embodiment.
  • the source 20 includes three vertical sources 21 arranged in the vertical direction so as to cover the entire height of the insulating base 40 held by the jig 10.
  • the jig 10 includes a base 11 capable of rotating about a first axis A1, and a plurality of brackets 12 arranged along the first axis A1, wherein the first axis A1 is substantially parallel to the vertical direction.
  • the base 11 is shown as a substantially rectangular parallelepiped holder rotatably connected to the bottom plate, and is provided with four uprights, and a plurality of rotatable rods are arranged between two adjacent uprights along the first axis A1.
  • the rods constitute the bracket 12 in this alternative, and can hold the insulating base 40 fixedly.
  • the first bracket 13 provided on the first surface of the base 11 can swing around the fourth axis A4, and the second bracket 14 provided on the second surface of the base 11 can swing around the fifth axis A5, of which the fourth The axis A4 intersects the fifth axis A5, and both are perpendicular to the first axis A1 of the base 11.
  • a third bracket and a fourth bracket similar to the first bracket 13 and the second bracket 14 may also be provided on the other two surfaces of the base 11.
  • Gears 15 are provided at both ends of each rotatable rod, and gears 15 arranged at the same height on adjacent side surfaces engage with each other.
  • the first to fourth brackets provided on the four surfaces of the base 11 can all receive the metal ions released from the three sources 20, Moreover, when the bracket on one surface swings in a certain direction, the bracket on the adjacent surface can swing in the opposite direction under the action of the meshing of the gears 15 with each other.
  • Fig. 4 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to a second embodiment.
  • the manufacturing equipment has the same configuration as the manufacturing equipment of the first embodiment, and the difference lies only in the configuration of the source 20 itself.
  • the source 20 includes a vertical source 21 and a plurality of inclined sources 22 arranged around the vertical source 21.
  • the figure shows four inclined sources 22 respectively arranged on the upper, lower, left and right sides of the vertical source 21.
  • the number and location of the inclined sources 22 can be adjusted.
  • six or eight inclined sources 22 evenly spaced in the circumferential direction may be arranged around one vertical source 21.
  • the vertical source 21 releases metal ions along a first direction D1 that is substantially perpendicular to the bottom surface of the insulating base 40. That is, the metal ions released from the vertical source 21 can be incident on the bottom surface of the insulating base 40 along a straight line.
  • the inclined source 22 releases metal ions along the second direction D2, which forms an angle ⁇ with the first direction D1.
  • the included angle ⁇ is greater than 0° and less than 90°, for example, it may be in the range of 15°-60°, preferably 45°.
  • the metal ions released from the inclined source 22 can be incident on the side surface of the insulating base 40 and the side surface of the resonance column 63 and the partition wall 64 along a straight line.
  • the insulating base 40 is held on the bracket 12 of the jig 10, and the jig 10 is moved to a suitable station in the manufacturing equipment, so that the bottom surface of the insulating base 40 is positioned in the vertical direction and is aligned with the source.
  • the release port of 20 is opposite.
  • the vertical source 21 and the inclined source 22 are turned on, and the surface of the insulating substrate 40 is simultaneously coated with multiple sources with different angles from up, down, left, and right, so as to avoid the occurrence of dead corners and achieve full metallization coverage of the surface.
  • Fig. 5 shows a schematic configuration diagram of a manufacturing apparatus of a microwave device according to a third embodiment.
  • the manufacturing equipment has the same structure as the manufacturing equipment of the second embodiment, except for the movement mode of the jig 10 and the insulating base 40.
  • the release ports of the respective sources 20 in the manufacturing equipment 1 are arranged at a certain angle so that the release directions of the metal ions intersect each other.
  • the insulating base 40 is moved to a proper position in the equipment, turn on all the vertical sources 21 and inclined sources 22, or some of these sources, so that the metal ions released from the source 20 can be incident on the insulating base in different directions. 40.
  • the jig 10 loaded with the insulating substrate 40 is translated as a whole along the third axis A3, which intersects the direction of movement of the metal ions released from the source 20, preferably with The direction of movement is vertical to the horizontal direction.
  • the third axis A3 may be perpendicular to the movement direction of the metal ions released from the vertical source 21, that is, the first direction D1.
  • the moving distance of the insulating base 40 along the third axis A3 may be less than or equal to half of the length of the insulating base 40 on the third axis A3.
  • the base 11 of the clamp 10 can also rotate around the first axis A1 shown in FIG. 2, or the bracket 12 of the clamp 10 can also swing around the second axis A2 shown in FIG.
  • the coverage of 40 can improve the uniformity of plating.
  • Fig. 6 shows a schematic configuration diagram of a manufacturing apparatus according to an alternative of the third embodiment described above.
  • the clamp 10 shown in FIG. 3 is used, and the clamp 10 is provided with a plurality of rollers 16 on the bottom surface of the bottom plate. These rollers 16 are embedded on a track arranged along the third axis A3 and can be translated along the third axis A3 under the control of the controller 30.
  • the clamp 10 can translate along the third axis A3 as a whole during operation, the base 11 of the clamp 10 can rotate about the first axis A1, and each bracket 12 loaded with the insulating base 40 can rotate around the first axis.
  • the axis that A1 intersects rotates.
  • the controller 30 can control the operation of the manufacturing equipment 1 in one of the following ways or a combination of multiple ways: using multiple sources 20 with different release directions; changing the angle of the same source 20 during operation; making the fixture 10
  • the base 11 rotates around the first axis A1; makes the bracket 12 of the clamp 10 swing around the second axis A2; and makes the clamp 10 translate as a whole along the third axis A3.
  • the third axis A3 of the overall translation of the clamp 10 may not be a horizontal direction, but a vertical direction or another direction intersecting the metal ion release direction.
  • the clamp 10 can also be kept stationary, and the source 20 can be translated along a certain direction that intersects the ion release direction.
  • metallized dead corner areas refer to areas that are difficult to be plated with a metal layer through existing processes, that is, areas where the metal plating layer is very thin or even without metal plating, such as through holes, blind holes, sidewalls, or corners of microwave devices.
  • the base of the clamp has a variable rotation speed when rotating around the first axis, and the rotation speed is the smallest when the metalized dead angle area of the insulating substrate is facing the released metal ions.
  • the bracket of the clamp has a varying swing speed when swinging around the second axis, and the swing speed is the smallest when the metalized dead angle area of the insulating substrate is directly facing the released metal ions.
  • the clamp has a varying translation speed when it is translated along the third axis, and the translation speed is the smallest when the metalized dead angle area of the insulating substrate is directly facing the released metal ions.
  • the metal ion released from the source has a varying intensity and/or dose, and the intensity and/or dose is the largest when the metalized dead corner area of the insulating matrix is directly facing the released metal ion.
  • the manufacturing equipment 1 described above can also be used to manufacture other kinds of microwave devices, such as ceramic dielectric filters, cavity filters, antenna elements, or mobile phone antennas.
  • the structure of the antenna element 70 is shown in FIG. 7, where FIG. 7(a) shows a front view of the antenna element, FIG. 7(b) shows a top view, FIG. 7(c) shows a rear view, and FIG. 7( d) shows a cross-sectional view taken along the line AA shown in FIG. 7(a).
  • the antenna element 70 has a rectangular flat plate shape as a whole.
  • the insulating substrate of the antenna element 70 can receive the metal ions released from the source 20 from a plurality of different angles, and thus can be plated on both the outer surface of the radiation unit 71 and the inner concave surface of the feed network 72 Upper metal layer.
  • the manufacturing method of the microwave device according to the present invention mainly includes the following steps: holding the insulating substrate of the microwave device on the bracket of the clamp in the manufacturing equipment; turning on the source to release metal ions toward the insulating substrate; and controlling the movement mode of the clamp and/or the angle of the source,
  • the insulating base is made to receive metal ions from multiple angles, and a metal layer is formed on all surfaces of the insulating base.
  • the manufacturing equipment may be the manufacturing equipment of the microwave device described above, for example, any of the manufacturing equipment 1 described in the first to third embodiments.
  • the constituent material of the insulating matrix can be selected according to the specific type and performance requirements of the microwave device.
  • the insulating matrix may include high molecular polymer materials such as PEI, PI, PPS, LCP, ABS, etc., which have a higher glass transition temperature T g and a lower thermal expansion coefficient CTE.
  • high polymer materials can also be used with inorganic fillers such as glass fibers, ceramics, and minerals to further reduce CTE and increase thermal conductivity.
  • materials such as the BaO-Ln 2 O 3 -TiO 2 (BLT) series, CaTiO 3 modified series and modified lead-based perovskite series with tungsten bronze structure can be used for the low frequency range.
  • the dielectric resonator can use BaTi 4 O 9 , Ba 2 Ti 9 O 20 and (Zr, Sn)TiO 4 , CaTiO 3 , SrTiO 3 and other materials for dielectric resonators in the medium frequency range, as well as composite calcium Titanium structure-type materials are used for microwave devices in the high frequency range.
  • other insulating materials such as various resins, can also be used.
  • the insulating base Before maintaining the insulating base, the insulating base can be pre-treated.
  • the pre-treatment may include degreasing, cleaning and drying the insulating substrate to ensure that the surface of the insulating substrate is clean and dry.
  • the pretreatment may also include Hall ion source or anode layer ion source treatment to remove contaminants and impurities on the surface, and at the same time activate the surface of the insulating substrate to improve the bonding force between the surface and the metal layer.
  • helium, argon, oxygen, nitrogen, ozone, hydrogen, and their mixtures can be used as the processing gas, at a voltage of 500V-2000V, a current of 0.03A-2A, and a temperature of 40°C to 150°C. Under the processing temperature of 30s-30min, the insulating substrate is processed.
  • Ion implantation can also be used as an alternative or supplementary pre-treatment process.
  • a metal material is used as a target, and the metal material in the target is ionized by an electric arc under vacuum to generate ions, and the ions are accelerated under high voltage to obtain high energy; high-energy metal ions are used
  • the high velocity hits the surface of the insulating substrate and is injected to a certain depth below the surface to form a doped layer.
  • a stable chemical bond such as an ionic bond or a covalent bond, can be formed between the insulating material and the injected metal ions, thereby helping to improve the bonding force between the metal layer formed on the surface of the insulating substrate and the insulating material, and inhibit The peeling of the metal layer.
  • Ion implanted metals include, but are not limited to, copper, iron, chromium, nickel, molybdenum, manganese, titanium, aluminum, and alloys of two or more of them.
  • conductive oxides, conductive carbides, conductive organics, etc. can also be used as conductive materials for ion implantation.
  • various process parameters of the ion implantation process can be determined according to the types of insulating base materials and implanted materials, the desired bonding force, and the thickness of the implanted layer.
  • the ion implantation energy is 5keV-30keV
  • the ion implantation current is 1mA-20mA
  • the treatment time is 20s-10 minutes to obtain a doped layer with a thickness of 5nm-50nm.
  • Plasma deposition uses a similar method to ion implantation, except that a lower acceleration voltage is applied during the working process. That is, the metal material is also used as the target material, and the metal material in the target material is ionized by the arc action under vacuum to generate ions, and then the ions are accelerated under the action of the electric field to obtain a certain amount of energy, and then deposited on the surface of the insulating substrate. Form a plasma deposition layer.
  • the metal materials deposited by plasma include but are not limited to copper, silver, iron, chromium, nickel, molybdenum, manganese, titanium, aluminum, and alloys of two or more elements thereof.
  • the thickness of the plasma deposition layer and the bonding force between the plasma deposition layer and the insulating substrate can be adjusted by adjusting the process parameters such as the accelerating voltage, current, and processing time of the electric field.
  • the deposition energy of the plasma deposition is 10eV-100eV
  • the deposition current is 50A-70A
  • the processing time is 30s-10min
  • the temperature range generated is 40°C-150°C to obtain plasma with a thickness of 10nm-200nm.
  • Body deposition layer is adjusted by adjusting the process parameters such as the accelerating voltage, current, and processing time of the electric field.
  • Magnetron sputtering deposition refers to filling an inert gas in a high-vacuum sputtering chamber, and ionizing the inert gas under a high-frequency and high-voltage electric field to generate glow discharge, thereby forming a high-energy ion current; use this
  • the ion current bombards the target electrode, and the magnetic field is used to constrain the trajectory of the ion current, so that the material bombarded from the target electrode is deposited on the surface of the insulating substrate in a certain path to form a sputtering deposition layer.
  • the material of the target electrode includes, but is not limited to, copper, silver, nickel, gold, platinum, and alloys of two or more of them.
  • the deposition current of sputtering deposition is 5A-10A
  • the deposition voltage is 300V-600V
  • the deposition energy is generally less than 10eV
  • the deposition time is 5min-10min
  • the generated temperature range is 40°C-150°C.
  • the deposition layer can be further plated with 5 ⁇ m-10 ⁇ m copper, chromium and other metal materials by electroplating or electroless plating to form a thickened layer.
  • the layer and the thickened layer constitute the metal layer of the present invention.
  • it is convenient and easy to select various processes such as cyanide copper plating, sulfate copper plating, pyrophosphate copper plating, and cyanide-free copper plating, and adjust various parameters such as current and working time during electroplating. Adjust the thickness of the thickened layer.
  • electroplating or electroless plating can also be used to perform nickel plating, tin plating, gold plating or silver plating on the surface of the insulating substrate that has undergone vacuum treatment and injection/deposition treatment to form a solder protection layer.
  • FIGS. 8(a) to 8(d) show schematic cross-sectional changes of the microwave device insulating substrate corresponding to the steps of the method. .
  • the insulating substrate 40 as shown in Figure 8(a) is pre-processed at a voltage of 1000V, a current of 1A, and a processing temperature of 100°C.
  • the processing time is 10min.
  • the plurality of processed insulating bases 40 are held on the bracket 12 of the jig 10 in the manufacturing equipment as shown in FIG. 3, and the first plasma deposition source is used as the source 20 to release metal ions toward the insulating base 40.
  • the target material of the first plasma deposition source is nickel.
  • a deposition energy of 50 eV, a deposition current of 50 A and a processing temperature of 120° C. are used to form a first deposition layer 511 with a thickness of 20 nm on all surfaces 41 of the insulating substrate 40 in 4 minutes.
  • the first deposition layer 511 is attached above the surface 41 of the insulating base 40.
  • the target material of the second plasma deposition source is a metal material with excellent conductivity and heat dissipation, for example, copper, silver or alloys thereof.
  • the resistivity of copper and silver are 1.68 ⁇ 10 -8 ⁇ m and 1.59 ⁇ 10 -8 ⁇ m, respectively, and the thermal conductivity is 401W/m ⁇ K and 429W/m ⁇ K, respectively.
  • the second deposition layer 512 is attached above the surface of the first deposition layer 511, and the plasma deposition layer 51 is composed of the first deposition layer 511 and the second deposition layer 512.
  • the insulating base 40 formed with the plasma deposited layer 51 is put into an electroplating bath, and a thick layer 54 composed of copper is formed on the surface of the insulating base 40 by a conventional copper electroplating method, and the thickness is 8 ⁇ m.
  • the thickened layer 54 is attached above the surface of the second deposition layer 512, and the metal layer 50 is composed of the plasma deposited layer 51 and the thickened layer 54. In this way, the microwave device 4 covered with the metal layer 50 on all the surfaces 41 is finally formed.
  • tin plating is performed on a specific area of the insulating base 40 by an electroplating method to form a solder protection layer.
  • FIGS. 9(a) to 9(e) show schematic cross-sectional changes of the insulating substrate of the microwave device corresponding to each step of the method. .
  • the insulating base 40 as shown in FIG. 9(a) is degreasing, cleaning, and drying.
  • the insulating substrate 40 is placed in a heating furnace and heated for 20 minutes in the temperature range of 100°C-150°C to fully exhaust the air and moisture inside, and facilitate subsequent processing of various ion sources .
  • the processed insulating base 40 is held on the bracket of the jig in the manufacturing equipment, and the ion implantation source is used as a source to release metal ions toward the insulating base.
  • the target material of the ion implantation source is titanium.
  • an ion implantation energy of 10keV, an ion implantation current of 5mA and a processing time of 5min were used.
  • titanium ions are implanted below the surface 41 of the insulating base 40 to form a doped layer 52 together with the constituent materials of the insulating base 40, the thickness of which is 20 nm.
  • Titanium metal and polymer substrate have a good bonding force, and it can be injected to a depth of 20-50nm as a primer layer.
  • titanium-copper alloy or titanium-aluminum alloy can also be selected as the underlayer, with a thickness of 50-100nm. Titanium and copper or aluminum with excellent electrical conductivity can not only ensure the bonding force, but also do not reduce the electrical conductivity.
  • the ion implantation source is replaced by the plasma deposition source as a new source, and the metal ions are continuously released toward the insulating substrate.
  • the target material of the plasma deposition source is titanium.
  • a plasma deposition layer 51 with a thickness of 25 nm was formed on all surfaces 41 of the insulating substrate 40 in 5 minutes. As shown in FIG. 9( c ), the plasma deposition layer 51 is attached above the surface 41 of the insulating base 40 and is closely connected with the doped layer 52.
  • the plasma deposition source is replaced with a magnetron sputtering deposition source as a new source, and the metal ions are continuously released toward the insulating substrate.
  • the target material of the magnetron sputtering deposition source is copper.
  • a sputtering deposition with a thickness of 1 ⁇ m was formed on the plasma deposition layer 51 in 8 minutes.
  • Layer 53 As shown in FIG. 9(d), the sputter deposition layer 53 is attached above the plasma deposition layer 51.
  • the thickness of the metal layer can be further increased and the square resistance can be reduced to below 50m ⁇ to facilitate the subsequent electroplating process.
  • the insulating substrate 40 formed with the doped layer 52, the plasma deposition layer 51 and the sputter deposition layer 53 is placed in an electroplating bath, and a thick layer 54 composed of copper is formed on its surface by copper electroplating. , Its thickness is 10 ⁇ m.
  • the thickened layer 54 is attached above the sputtered deposition layer 53, and the metal layer 50 is composed of the plasma deposited layer 51, the sputtered deposited layer 53 and the thickened layer 54. In this way, the microwave device 4 covered with the metal layer 50 on all the surfaces 41 is formed.
  • solder protection layer is formed on a specific area of the insulating substrate to form a solder protection layer.
  • metal ions are implanted below the surface of the insulating base 40 to form the doped layer 52 instead of being formed above the surface, which is equivalent to below the surface of the insulating base 40 A large number of "foundation piles" are buried.
  • the plasma deposition layer 51 is closely connected with the doped layer 52, the sputter deposition layer 53 is attached above the plasma deposition layer 51, and the thickened layer 54 is attached above the sputter deposition layer 53. Therefore, the bonding force between the metal layer 50 composed of the plasma deposition layer 51, the sputter deposition layer 53, and the thickened layer 54 and the insulating base 40 is relatively large.
  • the metal materials in the doped layer 52 and the plasma deposited layer 51 have extremely small nano-scale sizes, resulting in a relatively uniform density of injected and deposited metal particles, and substantially the same incident direction. Therefore, the pinhole phenomenon is not prone to appear on the surface of the metal layer 50, and the bonding interface between the metal layer 50 and the insulating base 40 is also uniform and flat, with low surface roughness.
  • the filter prepared by the above method has a surface roughness Ra of about 0.6 ⁇ m, which is much lower than the 1 ⁇ m-3 ⁇ m in the case of the prior art chemical treatment.
  • the existing chemical treatment attacks and bites the surface of the substrate through the use of a chemical solution to form a rough morphology and increase the specific surface area, thereby improving the bonding force; after electroless plating or nickel plating and copper plating on the roughened surface, the result is The surface is still very rough, which makes the signal transmission loss very large.
  • the ion implantation or plasma treatment of the present invention does not increase the surface roughness, and therefore does not increase the loss during signal transmission, which is beneficial to signal transmission.
  • the filter of the present invention can achieve insertion loss below -1.0dB, which is about 20% lower than the prior art, and can also achieve out-of-band suppression above -60dB, but the temperature drift remains the same as the existing one.
  • the filters are basically equivalent.
  • ion implantation source plasma deposition source and magnetron sputtering deposition source can be used as the source of each of the above-mentioned manufacturing devices , That is, it can release metal ions from different directions relative to the insulating substrate.
  • the manufacturing method of the present invention is not limited to these two embodiments.
  • a magnetron sputtering deposition source can be used to form a metal layer; an ion implantation source can be first used to form a doped layer under the surface of the insulating substrate, and then a magnetron sputtering deposition source can be used directly to form a sputtering layer above the doped layer. Deposition layer; it is also possible to first form a sputter deposition layer on the surface of the insulating substrate, and then use a plasma deposition source to form a plasma deposition layer above the sputter deposition layer.
  • the present invention can obtain a metal layer with high bonding force and low surface roughness on the surface of the microwave device, so that the microwave device has better electrical performance and better stability.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种微波器件的制造设备，微波器件的制造设备(1)包括：夹具(10)，夹具(10)包括能够围绕第一轴线(A1)旋转的基座(11)、以及能够围绕第二轴线(A2)摆动的托架(12)，托架(12)连接至基座(11)以用于保持绝缘基体(40)，其中第一轴线(A1)与第二轴线(A2)相交；用于朝绝缘基体(40)释放金属离子的源头(20)；以及控制器(30)，控制器(30)耦合至夹具(10)和源头(20)，并且构造成控制夹具(10)的运动模式和/或源头(20)的角度，使得绝缘基体(40)从多个角度接收金属离子，并在绝缘基体(40)的表面(41)上形成金属层(50)。还公开了一种微波器件的制造方法。

Description

微波器件的制造设备和制造方法 技术领域
本发明涉及微波器件的制造设备和制造方法，尤其涉及用于对微波器件绝缘基体的表面进行金属化的设备和方法。
背景技术
微波器件是指工作在微波波段(频率为300-300000兆赫)的器件，包括微波振荡器、功率放大器、混频器、检波器、滤波器、天线振子或者手机天线等，广泛地应用于航空航天、雷达、电子对抗、广播及通信系统等电子装备中。以滤波器为例，它是一种频率选择装置，能够仅使有用信号通过并有效地抑制无用信号，解决不同频段、不同形式的通讯系统之间的干扰问题。滤波器的阶数越高，单位面积内的功能电子元件就越多，性能越好，相应地制造难度也越大。如何使同样阶数的滤波器尺寸更小或者使同样尺寸的滤波器阶数更高以提高滤波器的性能，这成为行业研究的热点问题。
腔体滤波器采用谐振腔体结构，其中一个腔体能够等效成电感并联电容而形成一个谐振级，实现滤波功能。较之其他滤波器，腔体滤波器结构牢固、体积小、性能稳定可靠、Q值适中、散热性好，易于实现高阶滤波器，因此广泛地应用于通信基站中。如图1所示，典型的腔体滤波器60包括底面61和侧面62，在底部设有若干实心或空心的谐振柱63，由隔离墙64将腔体内部分割为若干谐振腔，还在隔离墙64上开设有槽孔65以实现谐振腔之间的联通。
腔体滤波器主要有以下两方面要求：材料的刚性和耐高温性能好；表面金属层的粗糙度低、结合力高。腔体滤波器的绝缘基材通常包括PEI、PI、PPS、LCP、ABS等高分子聚合物材料，它们具有较高的玻璃化转变温度T g和较低的热膨胀系数CTE。以这些材料为基础的塑料腔体滤波器具备轻便、均匀性好、较低的D k和D f、容易加工、 调试效率高、适合一体化设计等优点，具有良好的应用前景。为了进一步降低CTE并提高导热率，高分子聚合物材料也可以与玻璃纤维、陶瓷、矿物等无机填料一同使用。此外，表面金属层的粗糙度决定信号反射、震荡及插损性能，而结合力影响金属层的剥离，并进而影响滤波器性能的稳定性。目前，主要采用如下工艺对腔体滤波器的表面进行金属化：先用粗化药水和/或喷砂粗化，然后化镀Pd和Cu，或者化镀Pd和Ni，再进行电镀Cu(≥5μm)和Ag(≥1μm)。在此，为保证结合力而采用的化学处理引起较大的粗糙度(Ra达到1.6μm)，喷砂处理则会引起更大的粗糙度，从而导致关键的电性能插损较大。
此外，高阶滤波器或腔体滤波器的制造难点之一在于表面金属化工艺。对体积小、排布密集的各种3D器件基材，如何实现其表面无死角、均匀的金属化，对于滤波器制造而言是至关重要的。现有技术工艺对于各种微小3D结构的边角、或者深孔的金属化是十分乏力的，无法解决死角处的金属表面裂缝、尖锐凸起、空洞、金属与基材结合力差等问题，这些问题会导致滤波器的性能大幅下降。例如，腔体滤波器内的所有表面都需要金属化。随着通道数增加，例如从1通道增加到4通道、8通道，腔体内谐振柱和隔离墙的数量也会大幅增加，腔体深度可达到15mm以上。在此情况下，如果在真空处理时绝缘基体表面相对于源头没有一定的角度，那么在谐振柱底部区域、隔离墙底部区域、腔壁内侧底部区域等，金属镀层就会很薄甚至成为死角，即没有金属镀层的区域。
发明内容
本发明是鉴于上述问题做出的，其目的在于提供一种微波器件的制造设备和制造方法，由此避免现有工艺中存在的上述缺陷，能够实现微波器件表面的金属全面覆盖，避免死角的出现，同时还能够在微波器件的表面上获得结合力高且表面粗糙度低的金属层。
根据一方面，本发明提供了一种微波器件的制造设备，其包括：夹具，夹具包括能够围绕第一轴线旋转的基座、以及能够围绕第二轴 线摆动的托架，托架连接至基座以用于保持绝缘基体，其中第一轴线与第二轴线相交；用于朝绝缘基体释放金属离子的源头；以及控制器，控制器耦合至夹具和源头，并且构造成控制夹具的运动模式和/或源头的角度，使得绝缘基体从多个角度接收金属离子，并在绝缘基体的所有表面上形成金属层。
根据另一方面，本发明提供了一种微波器件的制造方法，其包括：将绝缘基体保持在夹具的托架上，夹具包括能够围绕第一轴线旋转的基座、以及连接至基座并能够围绕第二轴线摆动的托架，其中第一轴线与第二轴线相交；开启源头，以朝绝缘基体释放金属离子；以及控制夹具的运动模式和/或源头的角度，使得绝缘基体从多个角度接收金属离子，并在绝缘基体的所有表面上形成金属层。
通过控制制造设备中夹具的运动模式和/或源头的角度，使得微波器件的绝缘基体能够从多个角度接收金属离子，并在所有表面上形成金属层，本发明能够实现微波器件表面的金属全面覆盖，避免死角的出现。此外，通过离子注入和等离子体沉积技术，本发明能够在微波器件的表面上获得结合力高且表面粗糙度低的金属层，使得微波器件具有更佳的电学性能和更好的稳定性。
附图说明
在参照附图阅读以下的详细描述后，本领域技术人员将更容易理解本发明的这些及其他的特征、方面和优点。为清楚起见，附图不一定按比例绘制，而是有些部分被夸大以示出细节。在所有附图中，相同的参考标号表示相同的部分。
图1示出腔体滤波器的结构。
图2示出根据第一实施例的微波器件的制造设备的构造示意图。
图3示出根据第一实施例的备选方案的微波器件的制造设备的构造示意图。
图4示出根据第二实施例的微波器件的制造设备的构造示意图。
图5示出根据第三实施例的微波器件的制造设备的构造示意图。
图6示出根据第三实施例的备选方案的微波器件的制造设备的构造示意图。
图7示出天线振子的结构，其中图7(a)示出天线振子的主视图，图7(b)示出俯视图，图7(c)示出后视图，图7(d)示出沿着图7(a)所示的A-A线截取的剖视图。
图8示出在根据第四实施例的微波器件的制造方法中，微波器件绝缘基体的剖面变化示意图，其中图8(a)示出绝缘基体，图8(b)示出第一沉积层，图8(c)示出第二沉积层，图8(d)示出加厚层。
图9示出在根据第五实施例的微波器件的制造方法中，微波器件绝缘基体的剖面变化示意图，其中图9(a)示出绝缘基体，图9(b)示出掺杂层，图9(c)示出等离子体沉积层，图9(d)示出溅射沉积层，图9(e)示出加厚层。
附图标记：
1  制造设备
10 夹具
11 基座
12 托架
A1 第一轴线
A2 第二轴线
A3 第三轴线
13 第一托架
A4 第四轴线
14 第二托架
A5 第五轴线
15 齿轮
16 滚轮
20 源头
21 垂直源头
22  倾斜源头
D1  第一方向
D2  第二方向
θ  夹角
30  控制器
4   微波器件
40  绝缘基体
41  绝缘基体的表面
50  金属层
51  等离子体沉积层
511 第一沉积层
512 第二沉积层
52  掺杂层
53  溅射沉积层
54  加厚层
60  腔体滤波器
61  底面
62  侧面
63  谐振柱
64  隔离墙
65  槽孔
70  天线振子
71  馈电网络
72  辐射单元。
具体实施方式
以下，将参照附图详细地说明本发明的实施方式。本领域技术人员将理解，这些说明内容仅仅描述了本发明的示例性实施例，而决不意图限制本发明的保护范围。例如，在本发明的一个附图或实施例中 描述的元素或特征可以与在其他附图或实施例中描述的其他元素或特征相结合。
在附图中，图2至图6涉及微波器件的制造设备，分别示出根据第一、第二和第三实施例的微波器件的制造设备的构造示意图。图8和图9涉及微波器件的制造方法，分别示出在根据第四、第五实施例的微波器件的制造方法中，微波器件绝缘基体的剖面变化示意图。下面，将参照这些附图来详细地描述微波器件的制造设备和制造方法。
(第一实施例)
图2示出根据第一实施例的微波器件的制造设备的构造示意图。如图所示，微波器件的制造设备1包括夹具10、源头20和控制器30。夹具10包括能够围绕第一轴线A1旋转的基座11、以及能够围绕第二轴线A2摆动的托架12。托架12连接至基座11以用于保持微波器件用的绝缘基体40。第一轴线A1与第二轴线A2相交。源头20用于朝绝缘基体40释放选定类型的金属离子。控制器30耦合至夹具10和源头20，并且构造成控制夹具10的运动模式和/或源头20的角度，使得绝缘基体40能够从多个角度接收金属离子，并在绝缘基体40的所有表面上形成金属层。
在图示的实施例中，基座11包括圆柱形的轴杆和位于轴杆顶部的圆盘。轴杆可以与圆盘一体地形成，也可以分体地形成且然后相互装配在一起。第一轴线A1是大体竖直地取向的，构成轴杆的旋转轴线。基座11能够围绕第一轴线A1沿俯视时的顺时针方向或逆时针方向在±0-360°的范围内旋转。托架12以枢转的方式连接至圆盘的上表面，例如可以经由铰链连接至该圆盘，能够相对于圆盘上表面在0-180°的范围内围绕第二轴线A2摆动。第二轴线A2位于基座的上表面上，并且优选地垂直于第一轴线A1。托架12呈平板状，在其朝向源头20的支撑面上固定地保持微波器件用的绝缘基体40，使得绝缘基体40的腔体朝向源头20开放。因此，从源头20释放出的金属离子能够沿直线方向入射到绝缘基体40，从而在绝缘基体40的表面上形成金属 层。绝缘基体40可以通过螺钉等紧固部件固定至托架12，也可以通过过盈配合、卡扣配合等方式固定至托架12。
源头20与绝缘基体40相对地定位，在图中示出为仅设有一个垂直源头。然而，源头20也可以设置有多个，并且可以是可替换的。这样，当一个源头20发生故障或者需要采用其他种类的金属离子时，可以用新源头或者其他种类的源头来替换该源头20。源头20可以包括等离子体沉积源，从该等离子体沉积源释放的金属离子被沉积到绝缘基体40的表面上，以形成等离子体沉积层。源头20还可以包括离子注入源，从该离子注入源释放的金属离子被注入到绝缘基体40的表面下方以形成掺杂层。此外，源头20还可以包括磁控溅射沉积源，从该磁控溅射沉积源释放的金属离子被沉积到绝缘基体的表面上以形成溅射沉积层。等离子体沉积层和溅射沉积层都是根据本发明的金属层的一部分。这些源头可以单独使用，也可以组合起来使用。
夹具10和源头20分别包括未图示的驱动机构。控制器30耦合至夹具10和源头20各自的驱动机构，并且构造成向这些驱动机构发送驱动信号，以分别控制夹具10和源头20的运动。例如，控制器30可以控制源头20的朝向角度，以及夹具10中各个部件的相对运动。控制器30还可以控制源头20的各种操作参数，例如电压、电流、保持温度、工作时间等。此外，微波器件的制造设备1还可以包括各类传感器，用于检测源头20的朝向角度、基座11和托架12的运动速度和旋转角度或摆动角度、绝缘基体40的位置、或者绝缘基体40表面上金属层的有无，等等。控制器30从这些传感器接收各种信号，并且根据这些信号对夹具10和源头20进行反馈控制，以便在绝缘基体40的所有表面上都形成金属层。
在制造设备1的操作时，首先将绝缘基体40保持在夹具10的托架12上，并且将夹具10移动到制造设备内的合适工位。此时，绝缘基体40与源头20的金属离子释放口相对，并且隔开适当的距离。然后，开启源头20以朝绝缘基体40释放出金属离子，金属离子入射到 绝缘基体40，从而在绝缘基体40的表面上形成金属层。在此过程中，保持源头20不动，而是使夹具10的基座11围绕第一轴线A1旋转，同时使夹具10的托架12围绕第二轴线A2摆动。当然，也可以使夹具10的基座11在围绕第一轴线A1旋转到某一个特定的位置后停止，然后使夹具10的托架12围绕第二轴线A2摆动。
通过基座11围绕第一轴线A1的旋转以及托架12围绕第二轴线A2的摆动，绝缘基体40能够从多个不同角度接收从源头20释放出的金属离子，能够使金属离子入射到绝缘基体40表面上的各个部位，例如谐振柱63底部区域、隔离墙64底部区域、腔壁内侧底部区域等。由此，能够避免死角出现在绝缘基体40的边角处，并实现微波器件表面的金属全面覆盖。旋转和摆动的时机及角度范围均可以根据需要来调整。例如，在想要使隔离墙64底部区域处的金属层变得较厚的情况下，可以调整夹具10的基座11和托架12，使得从源头20释放出的金属离子正对着该区域，然后以较长的时间进行沉积。
图3示出根据上述第一实施例的备选方案的制造设备的构造示意图。在该备选方案中，源头20包括沿竖直方向排列的三个垂直源头21，以便覆盖保持于夹具10的绝缘基体40的整个高度。夹具10包括能够围绕第一轴线A1旋转的基座11、以及沿第一轴线A1排列的多个托架12，其中第一轴线A1大体平行于竖直方向。基座11示出为可旋转地连接至底板的大致长方体形状的保持架，设置有四根立柱，并且在相邻的两根立柱之间沿第一轴线A1排列有多根可旋转的杆。这些杆构成该备选方案中的托架12，能够固定地保持绝缘基体40。在基座11的第一面设置的第一托架13能够围绕第四轴线A4摆动，而在基座11的第二面设置的第二托架14能够围绕第五轴线A5摆动，其中第四轴线A4与第五轴线A5相交，并且两者均垂直于基座11的第一轴线A1。尽管图中未示出，但是在基座11的另外两个面上也可以设置与第一托架13和第二托架14类似的第三托架和第四托架。在各个可旋转杆的两个端部设有齿轮15，并且在相邻的侧面上设 置于相同高度的齿轮15彼此咬合。这样，当夹具10的基座11围绕第一轴线A1旋转时，在基座11的四个面上设置的第一至第四托架均能够接收到从三个源头20释放出的金属离子，而且当一个面上的托架绕某一方向摆动时，相邻面上的托架能够在齿轮15彼此的啮合作用下围绕相反的方向摆动。
(第二实施例)
图4示出根据第二实施例的微波器件的制造设备的构造示意图。该制造设备具有与第一实施例的制造设备相同的构造，区别仅在于源头20本身的构成。
在该实施例中，源头20包括垂直源头21和围绕该垂直源头21设置的多个倾斜源头22。图中示出了分别设置在垂直源头21的上、下、左、右四个侧面的四个倾斜源头22。然而，倾斜源头22的数量和设置位置都是可以调节的，例如可以围绕一个垂直源头21设置有沿圆周方向均匀地间隔开的六个或八个倾斜源头22。垂直源头21沿着第一方向D1释放出金属离子，该第一方向D1与绝缘基体40的底面大体垂直。即，从垂直源头21释放的金属离子能够沿直线入射到绝缘基体40的底面。倾斜源头22沿着第二方向D2释放出金属离子，该第二方向D2与第一方向D1形成夹角θ。夹角θ大于0°且小于90°，例如可以在15°-60°的范围内，优选地为45°。从倾斜源头22释放的金属离子能够沿着直线入射到绝缘基体40的侧面以及谐振柱63和隔离墙64的侧面等区域。
在制造设备1的操作时，将绝缘基体40保持在夹具10的托架12上，并且将夹具10移动到制造设备内的合适工位，使得绝缘基体40的底面沿垂直方向定位，并且与源头20的释放口相对。保持夹具10不动，即夹具10的基座11不旋转，而且托架12也并不上下摆动。然后，开启垂直源头21和倾斜源头22，利用角度朝向不同的多个源头从上下左右等各个方向对绝缘基体40的表面同时进行镀膜，从而能够避免死角的出现，实现表面的全金属化覆盖。可以同时开启全部 的源头，也可以开启仅仅一部分源头，还可以先开启一部分源头然后再开启另一部分源头，只要从这些源头释放出的金属离子能够覆盖绝缘基体40的所有表面即可。
(第三实施例)
图5示出根据第三实施例的微波器件的制造设备的构造示意图。该制造设备具有与第二实施例的制造设备相同的构造，区别仅在于夹具10及绝缘基体40的运动模式。
在制造设备1的操作时，首先将制造设备1中各个源头20的释放口按照一定的角度排布，使得金属离子的释放方向彼此相交。当绝缘基体40移动到设备内的适当工位时，开启所有的垂直源头21和倾斜源头22，或者这些源头中的一部分，使得从源头20释放出的金属离子能够沿不同的方向入射到绝缘基体40。与此同时，在有效的镀膜区域内，使装载有绝缘基体40的夹具10整体上沿第三轴线A3平移，该第三轴线A3与从源头20释放的金属离子的运动方向相交，优选为与该运动方向垂直的水平方向。例如，第三轴线A3可以垂直于从垂直源头21释放的金属离子的运动方向，即第一方向D1。绝缘基体40沿第三轴线A3的移动距离可以小于或等于绝缘基体40在该第三轴线A3上的长度的一半。同时，夹具10的基座11也可以围绕图2所示的第一轴线A1旋转，或者夹具10的托架12也可以围绕图2所示的第二轴线A2摆动，以增加金属离子对绝缘基体40的覆盖范围，提高镀覆的均匀性。
图6示出根据上述第三实施例的备选方案的制造设备的构造示意图。在该备选方案中，采用了图3所示的夹具10，该夹具10在底板的底面上设有多个滚轮16。这些滚轮16嵌入到沿第三轴线A3设置的轨道上，并且能够在控制器30的控制下沿着第三轴线A3平移。由此，夹具10在操作中能够整体上沿着第三轴线A3平移，夹具10的基座11能够绕第一轴线A1旋转，并且装载有绝缘基体40的各个托架12能够围绕与第一轴线A1相交的轴线旋转。
上文描述了制造设备的三个实施例，以便实现微波器件表面的金属全面覆盖并避免死角的出现，但是本发明的制造设备并不限定于这三个实施例。例如，控制器30能够以如下的一种方式或者多种方式的组合来控制制造设备1的操作：采用释放方向不同的多个源头20；在操作中改变同一个源头20的角度；使夹具10的基座11围绕第一轴线A1旋转；使夹具10的托架12围绕第二轴线A2摆动；以及使夹具10整体上沿第三轴线A3平移。夹具10整体上平移的第三轴线A3也可以不是水平方向，而是竖直方向或者与金属离子释放方向相交的其他方向。考虑到运动的相对性，例如也可以保持夹具10不动，而使源头20沿着与离子释放方向相交的一定方向平移。
为了确保微波器件表面的全面金属化以及金属化表面的良好导电性能，还可以对绝缘基体的金属化死角区域进行特殊的处理。这些金属化死角区域是指通过现有工艺难以镀覆金属层的区域，即金属镀层很薄或者甚至没有金属镀层的区域，例如微波器件的通孔、盲孔、侧壁或者转角等区域。例如，可以调整夹具中各个部件的运动速度，或者调整源头在不同时刻释放的金属离子的强度或者剂量，使得当绝缘基体的金属化死角区域正对着金属离子(即，垂直于金属离子的运动方向)时。在一个实施例中，夹具的基座在围绕第一轴线旋转时具有变化的旋转速度，该旋转速度在绝缘基体的金属化死角区域正对着所释放的金属离子时是最小的。在一个实施例中，夹具的托架在围绕第二轴线摆动时具有变化的摆动速度，该摆动速度在绝缘基体的金属化死角区域正对所释放的金属离子时是最小的。在一个实施例中，夹具在沿第三轴线平移时具有变化的平移速度，该平移速度在绝缘基体的金属化死角区域正对所释放的金属离子时是最小的。在一个实施例中，从源头释放的金属离子具有变化的强度和/或剂量，该强度和/或剂量在绝缘基体的金属化死角区域正对所释放的金属离子时是最大的。
上述三个实施例是基于图1所示的腔体滤波器60来举例说明的。然而，除了腔体滤波器60之外，上述制造设备1还可以用于制造其 他种类的微波器件，例如陶瓷介质滤波器、腔体滤波器、天线振子或者手机天线等。例如，天线振子70的结构示出于图7中，其中图7(a)示出天线振子的主视图，图7(b)示出俯视图，图7(c)示出后视图，图7(d)示出沿着图7(a)所示的A-A线截取的剖视图。天线振子70整体上呈矩形的平板形状，在正面设有两列向外突出的辐射单元71，在背面中与辐射单元71相对应的位置设有向内凹进的馈电网络72。通过上述的制造设备1，天线振子70的绝缘基体能够从多个不同的角度接收从源头20释放的金属离子，因而能够在辐射单元71的外侧面和馈电网络72的内侧凹面上均镀覆上金属层。
下面描述根据本发明的微波器件的制造方法。该制造方法主要包括以下步骤：将微波器件的绝缘基体保持在制造设备中的夹具的托架上；开启源头，以朝绝缘基体释放金属离子；以及控制夹具的运动模式和/或源头的角度，使得绝缘基体从多个角度接收金属离子，并在绝缘基体的所有表面上形成金属层。其中，制造设备可以是上文描述的微波器件的制造设备，例如在第一至第三实施例中记载的任何一种制造设备1。
绝缘基体的组成材料可以根据微波器件的具体类型和性能需求来选择。例如，在制造腔体滤波器时，绝缘基体可以包括PEI、PI、PPS、LCP、ABS等高分子聚合物材料，它们具有较高的玻璃化转变温度T g和较低的热膨胀系数CTE。这些高分子聚合物材料也可以与玻璃纤维、陶瓷、矿物等无机填料一同使用，以进一步降低CTE并提高导热率。在制造陶瓷介质滤波器时，可以采用钨青铜结构的BaO-Ln 2O 3-TiO 2(BLT)系列、CaTiO 3改性系列和改性铅基钙钛矿系列等材料以用于低频率范围的介质谐振器，可以采用BaTi 4O 9、Ba 2Ti 9O 20和(Zr，Sn)TiO 4、CaTiO 3、SrTiO 3等材料以用于中等频率范围内的介质谐振器，以及采用复合钙钛矿结构型材料以用于高频率范围内的微波器件。除此之外，还可以使用其他的绝缘材料，例如各种树脂等。
在保持绝缘基体之前，可以对绝缘基体进行前处理。前处理可以 包括对绝缘基体进行除油、清洗和烘干等，以保证绝缘基体表面洁净、干燥。前处理还可以包括霍尔离子源或阳极层离子源处理，以用于去除表面的污染物和杂质，同时活化绝缘基体表面以提高表面与金属层之间的结合力。在一个实施例中，可以采用氦气、氩气、氧气、氮气、臭氧、氢气以及它们的混合物等作为处理气体，在500V-2000V的电压、0.03A-2A的电流、以及40℃-150℃的处理温度下，对绝缘基体进行处理30s-30min。
还可以使用离子注入作为备选或补充的前处理工艺。在离子注入过程中，使用金属材料作为靶材，在真空下通过电弧作用使靶材中的金属材料电离以产生离子，在高电压下使离子加速并获得很高的能量；高能的金属离子以很高的速度撞击绝缘基体的表面，并且注入到表面下方达一定深度，形成掺杂层。在绝缘材料与所注入的金属离子之间可以形成稳定的化学键，如离子键或共价键，从而有助于提高形成于绝缘基体表面上的金属层与绝缘材料之间的结合力，并抑制金属层的脱落。离子注入金属包括但不限于铜、铁、铬、镍、钼、锰、钛、铝及其中两种以上元素的合金。此外，还可以使用导电氧化物、导电碳化物、导电有机物等作为离子注入用的导电材料。而且，可以根据绝缘基体材料和注入材料的种类、期望的结合力和注入层厚度等来确定离子注入过程的各种工艺参数，例如加速电压、电流和处理时间等。例如在一个实施例中，离子注入能量为5keV-30keV，离子注入电流为1mA-20mA，处理时间为20s-10分钟，得到厚度为5nm-50nm的掺杂层。
在形成金属层时，可以采用等离子体沉积工艺或者磁控溅射沉积工艺。等离子体沉积采用与离子注入类似的方式，只不过在工作过程中施加较低的加速电压。即，同样使用金属材料作为靶材，在真空下通过电弧作用使靶材中的金属材料电离而产生离子，然后在电场作用下使离子加速并获得一定的能量，沉积到绝缘基体的表面上而构成等离子体沉积层。等离子体沉积的金属材料包括但不限于铜、银、铁、 铬、镍、钼、锰、钛、铝及其中两种以上元素的合金。此外，通过调整电场的加速电压、电流和处理时间等工艺参数，能够调整等离子体沉积层的厚度及其与绝缘基体之间的结合力。在一个实施例中，等离子体沉积的沉积能量为10eV-100eV，沉积电流为50A-70A，处理时间为30s-10min，产生的温度范围为40℃-150℃，得到厚度为10nm-200nm的等离子体沉积层。
磁控溅射沉积是指在高真空度的溅射室中充以惰性气体，并在高频高压的电场下使惰性气体电离而产生辉光放电，从而形成高能量的离子流；使用这种离子流来轰击靶电极，并且使用磁场来约束离子流的运动轨迹，使得从靶电极轰击出来的材料按照一定的路径沉积在绝缘基体的表面上，以形成溅射沉积层。靶电极的材料包括但不限于铜、银、镍、金、铂及其中两种以上元素的合金。在一个实施例中，溅射沉积的沉积电流为5A-10A，沉积电压为300V-600V，沉积能量一般为10eV以下，沉积时间为5min-10min，产生的温度范围为40℃-150℃，得到厚度为1μm-3μm的溅射沉积层。
在形成了等离子体沉积层和/或溅射沉积层之后，还可以进一步通过电镀或化学镀方式，在沉积层上镀覆5μm-10μm的铜、铬等金属材料，形成加厚层，由沉积层和加厚层构成本发明的金属层。在电镀过程中，通过选择氰化镀铜、硫酸盐镀铜、焦磷酸盐镀铜、无氰镀铜等各种工艺，并且调整电镀期间的电流、工作时间等各种参数，能够方便且容易地调节加厚层的厚度。
在形成了金属层之后，还可以通过电镀或者化学镀方式，在经过真空处理和注入/沉积处理的绝缘基体的表面上进行镀镍、镀锡、镀金或者镀银等，以形成焊接保护层。
(第四实施例)
现在参照图8说明根据本发明的第四实施例的微波器件的制造方法，图8(a)至8(d)示出了与该方法的各个步骤相对应的微波器件绝缘基体的剖面变化示意图。
首先，使用氦气作为霍尔离子源的处理气体，在1000V的电压、1A的电流以及100℃的处理温度下，对如图8(a)所示的绝缘基体40进行前处理，处理时间为10min。
然后，将多个处理后的绝缘基体40保持在如图3所示的制造设备中夹具10的托架12上，并使用第一等离子体沉积源作为源头20，朝向绝缘基体40释放金属离子。第一等离子体沉积源的靶材为镍。在等离子体沉积过程中，采用50eV的沉积能量、50A的沉积电流和120℃的处理温度，用4min时间在绝缘基体40的所有表面41上形成厚度为20nm的第一沉积层511。如图8(b)所示，第一沉积层511附着在绝缘基体40的表面41上方。
然后，用第二等离子体沉积源替换第一等离子体沉积源以作为新的源头，继续朝绝缘基体释放金属离子。第二等离子体沉积源的靶材是兼具优异导电性和散热性的金属材料，例如可以为铜、银或其合金。铜、银的电阻率分别为1.68×10 -8Ω·m、1.59×10 -8Ω·m，导热系数分别为401W/m·K、429W/m·K。在等离子体沉积过程中，采用80eV的沉积能量、60A的沉积电流和120℃的处理温度，用6min时间在绝缘基体40的所有表面41上形成厚度为30nm的第二沉积层512。如图8(c)所示，第二沉积层512附着在第一沉积层511的表面上方，由第一沉积层511和第二沉积层512构成等离子体沉积层51。
接下来，将形成有等离子体沉积层51的绝缘基体40放入到电镀槽中，通过常规的电镀铜方式在绝缘基体40的表面上形成由铜组成的加厚层54，其厚度为8μm。如图8(d)所示，加厚层54附着在第二沉积层512的表面上方，由等离子体沉积层51和加厚层54构成金属层50。这样，就最终形成了在所有表面41上均覆盖有金属层50的微波器件4。
最后，通过电镀方式，在绝缘基体40的特定区域上进行镀锡，以形成焊接保护层。
(第五实施例)
现在参照图9说明根据本发明的第五实施例的微波器件的制造方法，图9(a)至9(e)示出了与该方法的各个步骤相对应的微波器件绝缘基体的剖面变化示意图。
首先，对如图9(a)所示的绝缘基体40进行除油、清洗及烘干。在烘干过程中，将绝缘基体40放入加热炉中，在100℃-150℃的温度范围内对其加热20min，以充分地排出其内部的空气和水分，便于后续进行各种离子源处理。
然后，将处理后的绝缘基体40保持在制造设备中夹具的托架上，并且使用离子注入源作为源头，朝向绝缘基体释放金属离子。离子注入源的靶材为钛。在离子注入过程中，采用10keV的离子注入能量、5mA的离子注入电流和5min的处理时间。如图9(b)所示，钛离子被注入到绝缘基体40的表面41下方，与绝缘基体40的组成材料一同形成掺杂层52，其厚度为20nm。金属钛和聚合物基底具有良好的结合力，注入到20-50nm的深度作为打底层即可。此外，还可以选择钛铜合金或者钛铝合金作为打底层，厚度为50-100nm。钛和导电性优异的铜或铝既可以保证结合力，同时也不降低导电性。
然后，用等离子体沉积源替换离子注入源以作为新源头，继续朝绝缘基体释放金属离子。等离子体沉积源的靶材为钛。在该沉积过程中，采用80eV的沉积能量、60A的沉积电流和140℃的处理温度，用5min时间在绝缘基体40的所有表面41上形成厚度为25nm的等离子体沉积层51。如图9(c)所示，等离子体沉积层51附着在绝缘基体40的表面41上方，并且与掺杂层52紧密地连接。
接着，用磁控溅射沉积源替换等离子体沉积源以作为新源头，继续朝向绝缘基体释放金属离子。磁控溅射沉积源的靶材为铜。在磁控溅射过程中，采用6A的沉积电流、400V的沉积电压、8eV的沉积能量、以及140℃的处理温度，用8min时间在等离子体沉积层51的上方形成厚度为1μm的溅射沉积层53。如图9(d)所示，溅射沉积层53附着在等离子体沉积层51上方。通过磁控溅射沉积，可以进一步加 厚金属层的厚度，并将方阻降低到50mΩ以下，以便于后续电镀过程的进行。
接下来，将形成有掺杂层52、等离子体沉积层51和溅射沉积层53的绝缘基体40放入到电镀槽中，通过电镀铜方式在其表面上形成由铜组成的加厚层54，其厚度为10μm。如图9(e)所示，加厚层54附着在溅射沉积层53上方，由等离子体沉积层51、溅射沉积层53和加厚层54构成金属层50。这样，就形成了在所有表面41上均覆盖有金属层50的微波器件4。
最后，通过化学镀方式，在绝缘基体的特定区域上进行镀锡，以形成焊接保护层。
在图9(e)所示的微波器件4中，金属离子被注入到绝缘基体40的表面下方以形成掺杂层52，而不是形成于表面上方，这就相当于在绝缘基体40的表面下方埋设了数量众多的“基桩”。等离子体沉积层51与掺杂层52紧密地连接，溅射沉积层53附着在等离子体沉积层51上方，并且加厚层54又附着在溅射沉积层53上方。因此，由等离子体沉积层51、溅射沉积层53和加厚层54构成的金属层50与绝缘基体40之间的结合力较大。此外，掺杂层52和等离子体沉积层51中的金属材料均具有极小的纳米级尺寸，导致所注入和沉积的金属粒子密度较为均匀、入射方向基本一致。因此，在金属层50的表面不容易出现针孔现象，而且在金属层50与绝缘基体40之间的接合界面也是均匀平整的，具有较低的表面粗糙度。
与现有技术的滤波器相比，通过上述方法制备的滤波器具有大约0.6μm的表面粗糙度Ra，该粗糙度远低于现有技术的化学处理情形下的1μm-3μm。现有的化学处理通过药水攻击和咬蚀基材表面，以形成粗糙的形貌并增大比表面积，从而提高结合力；在粗化的表面上化学镀耙或镀镍再镀铜后，所得的表面依然很粗糙，使得信号传输时的损耗很大。相比之下，本发明的离子注入或等离子体处理不会增加表面粗糙度，因而不会增大信号传输时的损耗，对于信号传输有益。例如， 本发明的滤波器能够实现-1.0dB以下的插损，这与现有技术相比降低了大约20％，而且还能够实现-60dB以上的带外抑制，但是温度漂移保持与现有的滤波器基本相当。
上文描述了制造方法的两个实施例，以便在微波器件的所有表面上形成金属层，其中离子注入源、等离子体沉积源和磁控溅射沉积源均可用作上述各制造装置的源头，即能够相对于绝缘基体从不同的方向释放金属离子。然而，本发明的制造方法并不限定于这两个实施例。例如，可以仅使用磁控溅射沉积源来形成金属层；可以先用离子注入源在绝缘基体的表面下方形成掺杂层，然后直接使用磁控溅射沉积源在掺杂层上方形成溅射沉积层；也可以先在绝缘基体的表面上形成溅射沉积层，然后再使用等离子体沉积源在溅射沉积层上方形成等离子体沉积层。通过离子注入和等离子体沉积技术，本发明能够在微波器件的表面上获得结合力高且表面粗糙度低的金属层，使得微波器件具有更佳的电学性能和更好的稳定性。
本发明并不限于上文描述的特定实施例。容易理解，在不脱离本发明的要旨的范围内，本领域技术人员可以对这些实施例进行各种显而易见的修改、调整及替换，以使其适合于特定的情形。实际上，本发明的保护范围是由权利要求书限定的，可以包括本领域技术人员能够预想到的其他示例。

Claims (21)

  1. 一种微波器件的制造设备，包括：
    夹具，所述夹具包括能够围绕第一轴线旋转的基座、以及能够围绕第二轴线摆动的托架，所述托架连接至所述基座以用于保持绝缘基体，其中所述第一轴线与所述第二轴线相交；
    用于朝所述绝缘基体释放金属离子的源头；以及
    控制器，所述控制器耦合至所述夹具和所述源头，并且构造成控制所述夹具的运动模式和/或所述源头的角度，使得所述绝缘基体从多个角度接收所述金属离子，并在所述绝缘基体的所有表面上形成金属层。
  2. 根据权利要求1所述的制造设备，其特征在于，所述夹具包括沿所述第一轴线排列的多个托架，所述多个托架包括能够围绕第四轴线摆动的第一托架和能够围绕第五轴线摆动的第二托架，所述第四轴线与所述第五轴线相交并且两者均垂直于所述第一轴线。
  3. 根据权利要求1所述的制造设备，其特征在于，所述源头包括垂直源头，所述垂直源头沿着与所述绝缘基体的底面大体垂直的第一方向释放出金属离子。
  4. 根据权利要求3所述的制造设备，其特征在于，所述源头包括倾斜源头，所述倾斜源头沿着与所述第一方向相交的第二方向释放出金属离子。
  5. 根据权利要求4所述的制造设备，其特征在于，多个所述倾斜源头设置在一个所述垂直源头的周围，并且所述第一方向与所述第二方向成15-60°、尤其是45°的夹角。
  6. 根据权利要求1所述的制造设备，其特征在于，所述第一轴线是竖直取向的，所述第二轴线位于所述基座的上表面上并与所述第一轴线相交。
  7. 根据权利要求1至6中任一项所述的制造设备，其特征在于， 所述夹具能够整体上沿第三轴线平移，所述第三轴线与从所述源头释放的所述金属离子的运动方向相交。
  8. 根据权利要求1至6中任一项所述的制造设备，其特征在于，所述源头是可替换的，并且包括等离子体沉积源，从所述等离子体沉积源释放的金属离子被沉积到所述绝缘基体的表面上，以形成等离子体沉积层作为所述金属层的至少一部分。
  9. 根据权利要求8所述的制造设备，其特征在于，所述源头还包括以下的一种或多种：离子注入源，从所述离子注入源释放的金属离子被注入到所述绝缘基体的表面下方以形成掺杂层；磁控溅射沉积源，从所述磁控溅射沉积源释放的金属离子被沉积到所述绝缘基体的表面上以形成溅射沉积层。
  10. 一种微波器件的制造方法，包括：
    将绝缘基体保持在夹具的托架上，所述夹具包括能够围绕第一轴线旋转的基座、以及连接至所述基座并能够围绕第二轴线摆动的所述托架，其中所述第一轴线与所述第二轴线相交；
    开启源头，以朝所述绝缘基体释放金属离子；以及
    控制所述夹具的运动模式和/或所述源头的角度，使得所述绝缘基体从多个角度接收所述金属离子，并在所述绝缘基体的所有表面上形成金属层。
  11. 根据权利要求10所述的制造方法，其特征在于，所述源头包括多个源头，所述制造方法包括调节所述多个源头的角度，以便从所述多个源头中的垂直源头沿着与所述绝缘基体的底面大体垂直的第一方向释放出金属离子，并且从所述多个源头中的倾斜源头沿着与所述第一方向相交的第二方向释放出金属离子。
  12. 根据权利要求11所述的制造方法，其特征在于，多个所述倾斜源头设置在一个所述垂直源头的周围，并且所述第一方向与所述第二方向成15-60°、尤其是45°的夹角。
  13. 根据权利要求10所述的制造方法，其特征在于，所述第一轴 线是竖直取向的，所述第二轴线位于所述基座的上表面上并与所述第一轴线相交。
  14. 根据权利要求10至13中任一项所述的制造方法，其特征在于，控制所述夹具的运动模式包括以下的一种或多种：
    使所述夹具的所述基座围绕所述第一轴线旋转；
    使所述夹具的所述托架围绕所述第二轴线摆动；以及
    使所述夹具整体上沿第三轴线平移，所述第三轴线与从所述源头释放的所述金属离子的运动方向相交。
  15. 根据权利要求14所述的制造方法，其特征在于：
    所述夹具的所述基座在围绕所述第一轴线旋转时具有变化的旋转速度，该旋转速度在所述绝缘基体的金属化死角区域正对所释放的金属离子时是最小的；或者
    所述夹具的所述托架在围绕所述第二轴线摆动时具有变化的摆动速度，该摆动速度在所述绝缘基体的金属化死角区域正对所释放的金属离子时是最小的；或者
    所述夹具在沿所述第三轴线平移时具有变化的平移速度，该平移速度在所述绝缘基体的金属化死角区域正对所释放的金属离子时是最小的。
  16. 根据权利要求10至13中任一项所述的制造方法，其特征在于，从所述源头释放的金属离子具有变化的强度和/或剂量，该强度和/或剂量在所述绝缘基体的金属化死角区域正对所释放的金属离子时是最大的。
  17. 根据权利要求15或16所述的制造方法，其特征在于，所述金属化死角区域包括所述微波器件的通孔、盲孔、侧壁或者转角。
  18. 根据权利要求10至13中任一项所述的制造方法，其特征在于，所述源头是可替换的，并且包括等离子体沉积源，所述制造方法包括将从所述等离子体沉积源释放的金属离子沉积到所述绝缘基体的表面上，以形成等离子体沉积层作为所述金属层的至少一部分。
  19. 根据权利要求18所述的制造方法，其特征在于，所述制造方法包括：将铜、铁、铬、镍、钼、锰、钛、铝及它们之间的合金中的一种或多种沉积到所述绝缘基体的所有表面上，以形成第一沉积层；以及，将铜、银或其合金沉积到所述绝缘基体的所有表面上，以形成第二沉积层，由所述第一沉积层和所述第二沉积层组成所述等离子体沉积层。
  20. 根据权利要求18所述的制造方法，其特征在于，所述制造方法还包括以下的一项或多项：
    在保持所述绝缘基体之前，使用霍尔离子源或者阳极层离子源对其进行前处理；
    在形成等离子体沉积层之前，使用离子注入源作为所述源头，将从所述离子注入源释放的金属离子注入到所述绝缘基体的表面下方以形成掺杂层；
    使用磁控溅射沉积源作为所述源头，将从所述磁控溅射沉积源释放的金属离子沉积到所述绝缘基体的表面上，以形成溅射沉积层作为所述金属层的一部分；以及
    通过电镀或化学镀方式，在所述等离子体沉积层或所述溅射沉积层上镀铜或镀铬，以形成加厚层作为所述金属层的一部分。
  21. 根据权利要求10所述的制造方法，其特征在于，所述微波器件包括陶瓷介质滤波器、腔体滤波器、天线振子或者手机天线。
PCT/CN2021/088271 2020-05-08 2021-04-20 微波器件的制造设备和制造方法 WO2021223589A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/922,169 US20230167541A1 (en) 2020-05-08 2021-04-20 Manufacturing apparatus and method for microwave device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010381497.1 2020-05-08
CN202010381497.1A CN113621929B (zh) 2020-05-08 2020-05-08 微波器件的制造设备和制造方法

Publications (1)

Publication Number Publication Date
WO2021223589A1 true WO2021223589A1 (zh) 2021-11-11

Family

ID=78377334

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/088271 WO2021223589A1 (zh) 2020-05-08 2021-04-20 微波器件的制造设备和制造方法

Country Status (3)

Country Link
US (1) US20230167541A1 (zh)
CN (1) CN113621929B (zh)
WO (1) WO2021223589A1 (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746571A (en) * 1971-06-29 1973-07-17 Xerox Corp Method of vacuum evaporation
US5759282A (en) * 1994-10-17 1998-06-02 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
EP0863226A1 (en) * 1997-03-06 1998-09-09 United Technologies Corporation Modular fixture for coating apparatus
US20040065262A1 (en) * 2002-10-07 2004-04-08 Burns Steven M. Multiple axis tumbler coating apparatus
CN1500284A (zh) * 2000-11-22 2004-05-26 ���ﰲ�뵼���豸���Ϲ�˾ 用于离子注入的混合扫描系统及方法
US20090258151A1 (en) * 2008-04-10 2009-10-15 Raytheon Company Method and Apparatus for Coating Curved Surfaces
CN102312203A (zh) * 2010-07-01 2012-01-11 向熙科技股份有限公司 可使工件摇摆的真空镀膜系统及摇摆载具
US20150307986A1 (en) * 2014-04-25 2015-10-29 Nano Etch Systems, Inc. Wafer stage for symmetric wafer processing
CN109652780A (zh) * 2018-12-12 2019-04-19 上海航天控制技术研究所 一种提高异形零件镀膜均匀性的控制方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657408A (ja) * 1992-08-13 1994-03-01 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の形成方法
DE69611804D1 (de) * 1995-04-17 2001-03-29 Read Rite Corp Bildung eines isolierenden dünnen Filmes durch eine Vielzahl von Ionenstrahlen
JP2003147519A (ja) * 2001-11-05 2003-05-21 Anelva Corp スパッタリング装置
US9206500B2 (en) * 2003-08-11 2015-12-08 Boris Druz Method and apparatus for surface processing of a substrate using an energetic particle beam
FR2871950B1 (fr) * 2004-06-22 2006-08-11 Commissariat Energie Atomique Filtre frequentiel et son procede de realisation.
WO2010018639A1 (ja) * 2008-08-15 2010-02-18 株式会社シンクロン 蒸着装置及び薄膜デバイスの製造方法
KR20120044050A (ko) * 2010-10-27 2012-05-07 주식회사 에이스테크놀로지 Ｒｆ 장비 도금 방법 및 이에 사용되는 스퍼터링 장치
TW201236809A (en) * 2011-03-01 2012-09-16 Hon Hai Prec Ind Co Ltd Coating device
KR102210379B1 (ko) * 2014-06-30 2021-02-02 (주)선익시스템 증착막 균일도 개선을 위한 박막 증착장치
KR20190077575A (ko) * 2016-11-22 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상으로의 층 증착을 위한 장치 및 방법
CN107022747B (zh) * 2017-04-05 2019-12-31 武汉光谷创元电子有限公司 微波介质部件及其制造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746571A (en) * 1971-06-29 1973-07-17 Xerox Corp Method of vacuum evaporation
US5759282A (en) * 1994-10-17 1998-06-02 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
EP0863226A1 (en) * 1997-03-06 1998-09-09 United Technologies Corporation Modular fixture for coating apparatus
CN1500284A (zh) * 2000-11-22 2004-05-26 ���ﰲ�뵼���豸���Ϲ�˾ 用于离子注入的混合扫描系统及方法
US20040065262A1 (en) * 2002-10-07 2004-04-08 Burns Steven M. Multiple axis tumbler coating apparatus
US20090258151A1 (en) * 2008-04-10 2009-10-15 Raytheon Company Method and Apparatus for Coating Curved Surfaces
CN102312203A (zh) * 2010-07-01 2012-01-11 向熙科技股份有限公司 可使工件摇摆的真空镀膜系统及摇摆载具
US20150307986A1 (en) * 2014-04-25 2015-10-29 Nano Etch Systems, Inc. Wafer stage for symmetric wafer processing
CN109652780A (zh) * 2018-12-12 2019-04-19 上海航天控制技术研究所 一种提高异形零件镀膜均匀性的控制方法

Also Published As

Publication number Publication date
US20230167541A1 (en) 2023-06-01
CN113621929B (zh) 2023-04-11
CN113621929A (zh) 2021-11-09

Similar Documents

Publication Publication Date Title
EP0595624B1 (en) Film forming apparatus for filling fine pores of a substrate
KR101959113B1 (ko) 금속 배선 구조 형성을 위한 스퍼터링 장치
JP6192060B2 (ja) 誘電体材料の堆積速度および成長動態を高める多重周波数スパッタリング
CN110760807A (zh) 陶瓷板真空溅射镀膜装置及其镀膜方法
JP2012197463A (ja) 薄膜の成膜方法
CN115466927B (zh) 薄膜沉积装置及薄膜沉积方法
KR20120023035A (ko) 성막 방법 및 성막 장치
WO2021223589A1 (zh) 微波器件的制造设备和制造方法
CN113463054B (zh) 介质滤波器全磁控溅射多层复合金属化方法
CN201620189U (zh) 一种对靶磁控溅射装置
CN115044879B (zh) 一种微孔镀膜装置及镀膜方法
JP2007297712A (ja) プラズマを利用して堆積された薄いシード層を介してのメタライゼーション
KR20170133602A (ko) 스퍼터용 활성화 및 반응성 기체로서 질소 가스를 이용한 질화티타늄 박막 증착 방법
CN112010680A (zh) 微波介质陶瓷器件及其制造方法
KR101020773B1 (ko) 아크 이온 플레이팅 장치
KR20150076467A (ko) 조직제어가 가능한 알루미늄 코팅층 및 그 제조방법
KR20090025473A (ko) 물리적 증착 기법을 이용한 3차원 코팅용 장치
CN114592176B (zh) 一种替代金属过渡连接层的离子注入方法
TW202031918A (zh) 濺射成膜裝置及其濺射成膜方法、化合物薄膜
KR19990069603A (ko) 배럴을 이용한 전자파 차폐용 다층 금속박막 제조장치.
KR100537014B1 (ko) 이온 플래이팅 방식에 의한 유해전자파 방지용 및 투명아크릴 폴리 카보네이트의 금속 칼라 박막 형성 시스템
KR19990060653A (ko) 대구경 중공음극방전건을 이용한 이온플레이팅 장치 및 그 방법
JPS5937564B2 (ja) 電子部品の端面電極形成方法
US20220364221A1 (en) Method for forming coating layer having plasma resistance
WO2021109425A1 (zh) 镀膜设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21800195

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21800195

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 15/05/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 21800195

Country of ref document: EP

Kind code of ref document: A1