WO2021215536A1 - Module haute fréquence et dispositif de communication - Google Patents

Module haute fréquence et dispositif de communication Download PDF

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Publication number
WO2021215536A1
WO2021215536A1 PCT/JP2021/016490 JP2021016490W WO2021215536A1 WO 2021215536 A1 WO2021215536 A1 WO 2021215536A1 JP 2021016490 W JP2021016490 W JP 2021016490W WO 2021215536 A1 WO2021215536 A1 WO 2021215536A1
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WO
WIPO (PCT)
Prior art keywords
path
high frequency
frequency module
low
transmission
Prior art date
Application number
PCT/JP2021/016490
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English (en)
Japanese (ja)
Inventor
礼滋 中嶋
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN202180027905.6A priority Critical patent/CN115398810A/zh
Publication of WO2021215536A1 publication Critical patent/WO2021215536A1/fr
Priority to US17/934,692 priority patent/US20230017570A1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/165—A filter circuit coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/171—A filter circuit coupled to the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Definitions

  • the present invention generally relates to a high frequency module and a communication device, and more particularly to a high frequency module including a power amplifier and a low noise amplifier, and a communication device including a high frequency module.
  • a high frequency system including a filter and an antenna switch
  • the high frequency system described in Patent Document 1 includes a filter and an antenna switch.
  • the antenna switch is a switch for switching the path connected to the antenna.
  • the high frequency system described in Patent Document 1 further includes a notch filter. The notch filter is provided between the filter and the antenna.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide a high frequency module and a communication device capable of reducing loss in a low-pass filter.
  • the high frequency module includes an antenna terminal, a power amplifier, a low noise amplifier, and a low pass filter.
  • the low-pass filter is provided in the transmission path and the reception path.
  • the transmission path is a path between the antenna terminal and the power amplifier.
  • the reception path is a path between the antenna terminal and the low noise amplifier.
  • the low-pass filter has a plurality of paths. Each of the plurality of routes constitutes at least a part of the transmission route and the reception route.
  • the plurality of routes have a first route and a second route.
  • the second path has a smaller reactance than the first path.
  • the high frequency module includes an antenna terminal, a power amplifier, a low noise amplifier, and a low pass filter.
  • the low-pass filter is provided in the transmission path and the reception path.
  • the transmission path is a path between the antenna terminal and the power amplifier.
  • the reception path is a path between the antenna terminal and the low noise amplifier.
  • the low-pass filter has a plurality of paths. Each of the plurality of routes constitutes at least a part of the transmission route and the reception route.
  • the low-pass filter includes an inductor and a capacitor.
  • the plurality of routes have a first route and a second route.
  • the first path is a path that passes through the capacitor.
  • the second path is a path that bypasses the capacitor.
  • the communication device includes the high frequency module and a signal processing circuit.
  • the signal processing circuit processes a transmission signal passing through the transmission path and a reception signal passing through the reception path.
  • the loss in the low pass filter can be reduced.
  • FIG. 1 is a circuit configuration diagram of a communication device including a high frequency module according to the embodiment.
  • FIG. 2 is a circuit configuration diagram of a switch module in the same high frequency module.
  • FIG. 3 is a cross-sectional view of the same high frequency module.
  • FIG. 4 is a circuit configuration diagram of a switch module in the high frequency module according to the first modification of the embodiment.
  • FIG. 5 is a circuit configuration diagram of a switch module in the high frequency module according to the second modification of the embodiment.
  • FIG. 6 is a cross-sectional view of the high frequency module according to the third modification of the embodiment.
  • the high-frequency module 1 includes a first power amplifier 21, a first transmission filter 22, a first reception filter 23, and a first low noise amplifier 24.
  • the first transmission filter 22 and the first reception filter 23 constitute a duplexer 25.
  • the high frequency module 1 includes a switch module 3.
  • the high frequency module 1 includes a mounting substrate 4, a plurality of external connection terminals 5, a first resin member 61, a second resin member 62, and a shield layer 63.
  • the high frequency module 1 is used, for example, in the communication device 8.
  • the communication device 8 is a mobile phone such as a smartphone.
  • the communication device 8 is not limited to a mobile phone, and may be, for example, a wearable terminal such as a smart watch.
  • the communication device 8 performs communication in the first communication band and communication in the second communication band. More specifically, the communication device 8 transmits the transmission signal of the first communication band (hereinafter referred to as “first transmission signal”) and receives the reception signal of the first communication band (hereinafter referred to as “first reception signal”). conduct. Further, the communication device 8 transmits a transmission signal of the second communication band (hereinafter referred to as “second transmission signal”) and receives a reception signal of the second communication band (hereinafter referred to as “second reception signal”). ..
  • the first transmission signal and the first reception signal are TDD (Time Division Duplex) signals.
  • the first transmission signal and the first reception signal are not limited to the TDD signal, and may be an FDD (Frequency Division Duplex) signal.
  • TDD is a wireless communication technology in which the same frequency band is assigned to transmission and reception in wireless communication, and transmission and reception are switched every hour.
  • FDD is a wireless communication technology that allocates different frequency bands to transmission and reception in wireless communication to perform transmission and reception.
  • the second transmission signal and the second reception signal are TDD signals.
  • the second transmission signal and the second reception signal are not limited to the TDD signal, and may be an FDD signal.
  • the first power amplifier 21 shown in FIG. 1 is an amplifier that amplifies the first transmission signal.
  • the first power amplifier 21 is provided between the first input terminal 52 and the first transmission filter 22 in the first transmission path P11 connecting the first antenna terminal 51 and the first input terminal 52.
  • the first power amplifier 21 has an input terminal 211 and an output terminal 212.
  • the input terminal 211 of the first power amplifier 21 is connected to an external circuit (for example, a signal processing circuit 82) via the first input terminal 52.
  • the first input terminal 52 is a terminal in which a high frequency signal (first transmission signal) from an external circuit is input to the high frequency module 1.
  • the output terminal 212 of the first power amplifier 21 is connected to the first transmission filter 22.
  • the first power amplifier 21 is controlled by, for example, a power amplifier controller (not shown).
  • the first power amplifier 21 may be directly or indirectly connected to the first transmission filter 22.
  • the first power amplifier 21 may be connected to the first transmission filter 22 via, for example, a first output matching circuit (not shown).
  • the first output matching circuit is provided between the first power amplifier 21 and the first transmission filter 22 in the first transmission path P11.
  • the first output matching circuit performs impedance matching between the first power amplifier 21 and the first transmission filter 22.
  • the first transmission filter 22 shown in FIG. 1 is a transmission filter of the first communication band.
  • the transmission filter of the first communication band passes the first transmission signal. More specifically, the first transmission filter 22 is provided between the first power amplifier 21 and the switch module 3 in the first transmission path P11.
  • the first transmission filter 22 passes the transmission signal in the transmission band of the first communication band, that is, the first transmission signal, among the high frequency signals amplified by the first power amplifier 21.
  • the first reception filter 23 is a reception filter of the first communication band.
  • the reception filter of the first communication band passes the first reception signal. More specifically, the first reception filter 23 includes the switch module 3 (first antenna switch 31) and the first low noise amplifier 24 in the first reception path P21 connecting the first antenna terminal 51 and the first output terminal 53. It is provided between.
  • the first reception filter 23 passes the reception signal in the reception band of the first communication band, that is, the first reception signal, among the high frequency signals input from the first antenna terminal 51.
  • the first low noise amplifier 24 shown in FIG. 1 is an amplifier that amplifies the first received signal with low noise.
  • the first low noise amplifier 24 is provided between the switch module 3 and the first output terminal 53 in the first reception path P21.
  • the first low noise amplifier 24 has an input terminal 241 and an output terminal 242, and the input terminal 241 of the first low noise amplifier 24 is connected to the switch module 3 (first antenna switch 31).
  • the output terminal 242 of the first low noise amplifier 24 is connected to an external circuit (for example, a signal processing circuit 82) via the first output terminal 53.
  • the first output terminal 53 is a terminal for outputting a high frequency signal (first received signal) from the first low noise amplifier 24 to an external circuit.
  • the switch module 3 includes a first antenna switch 31, a first low-pass filter 32, and a control circuit 33. Further, the switch module 3 includes a first antenna side terminal 34 and a plurality of (three in the illustrated example) first filter side terminals 35.
  • the first antenna switch 31 shown in FIG. 1 is a switch for switching the path connected to the antenna 81.
  • the first antenna switch 31 has a common terminal 311 and a plurality of (three in the illustrated example) selection terminals 312 to 314.
  • the common terminal 311 is connected to the first low-pass filter 32.
  • the selection terminal 312 of the plurality of selection terminals 312 to 314 is connected to the duplexer 25.
  • the common terminal 311 is connected to the first antenna terminal 51 via the first low-pass filter 32.
  • the first antenna switch 31 switches the connection state between the common terminal 311 and the plurality of selection terminals 312 to 314.
  • the first antenna switch 31 is controlled by, for example, a signal processing circuit 82.
  • the first antenna switch 31 electrically connects the common terminal 311 and any one of the plurality of selection terminals 312 to 314 according to the control signal from the RF signal processing circuit 83 of the signal processing circuit 82.
  • the first low-pass filter 32 includes a plurality of (three in the illustrated example) inductors 361 to 363 and a plurality of (two in the illustrated example) DTC 364,365.
  • a capacitor 366, an inductor 367, and a capacitor 368 are provided.
  • the first low-pass filter 32 includes a first transmission path P11 between the first antenna terminal 51 and the first power amplifier 21, and a first reception path P21 between the first antenna terminal 51 and the first low-noise amplifier 24. It is provided in.
  • the first low-pass filter 32 attenuates the harmonic component of the first transmission signal.
  • the plurality of inductors 361 to 363 are connected in series between the first antenna switch 31 and the first antenna side terminal 34.
  • the plurality of DTCs 364 and 365 are connected in series between the inductor 361 and the first antenna side terminal 34. Further, the DTC 364 is connected in parallel with the inductor 362, and the DTC 365 is connected in parallel with the inductor 363.
  • the capacitor 366 and the inductor 367 are connected in series between the path between the DTC 364 and the DTC 365 and the ground.
  • the capacitor 368 is connected between the path between the DTC 365 and the first antenna side terminal 34 and the ground.
  • the first low-pass filter 32 When the transmission signal passes, the first low-pass filter 32 having the circuit configuration as described above reduces the capacitance of the DTC 364, 365 and increases the reactance of the transmission path through which the transmission signal passes. As a result, the first low-pass filter 32 can attenuate the harmonic component of the transmission signal.
  • the capacitance of DTC364 and 365 is increased to reduce the reactance of the receiving path through which the received signal passes. Thereby, the loss when the received signal passes can be reduced.
  • the first low-pass filter 32 has a plurality of paths.
  • Each of the plurality of routes constitutes a part of at least one of the first transmission route P11 and the first reception route P21. More specifically, the plurality of routes have a first route and a second route. The second path has a smaller reactance than the first path.
  • the path connecting the first antenna switch 31 and the first antenna side terminal 34 when the capacitance of the DTC 364, 365 is reduced becomes the first path.
  • the path connecting the first antenna switch 31 and the first antenna side terminal 34 when the capacitance of the DTC 364, 365 is increased becomes the second path.
  • the transmission signal passing through the first transmission path P11 passes through the first path, and the reception signal passing through the first reception path P21 passes through the second path.
  • the transmission signal passing through the first transmission path P11 passes through the first path
  • the reception signal passing through the first reception path P21 passes through the second path.
  • the first route may be a route that passes through both DTC364 and DTC365
  • the second route may be a route that bypasses both DTC364 and DTC365.
  • the second route is a route in which the capacity of DTC364 and the capacity of DTC365 are 0 or a value close to 0.
  • the first route may be a route that passes through both DTC364 and DTC365
  • the second route may be a route that bypasses at least one of DTC364 and DTC365.
  • the second route is a route in which the capacity of DTC364 is close to 0 or 0, or a route in which the capacity of DTC365 is close to 0 or 0.
  • the first route may be a route that passes through at least one of DTC364 and DTC365
  • the second route may be a route that bypasses both DTC364 and DTC365.
  • the second route is a route in which the capacity of DTC364 and the capacity of DTC365 are 0 or a value close to 0.
  • Control circuit 33 acquires a signal from the signal processing circuit 82, and controls the switching of the first antenna switch 31 and the capacitance of the DTC 364, 365 of the first low-pass filter 32 based on the acquired signal. do.
  • the 1st antenna side terminal 34 is connected to the 1st low-pass filter 32 and the 1st antenna terminal 51 as shown in FIGS. 1 and 2. ..
  • the plurality of first filter side terminals 35 have a one-to-one correspondence with the plurality of selection terminals 312 to 314 of the first antenna switch 31, and are connected to the corresponding selection terminals 312 to 314. More specifically, the first filter side terminal 351 is connected to the selection terminal 312, the first filter side terminal 352 is connected to the selection terminal 313, and the first filter side terminal 353 is connected to the selection terminal 314. ing. The first filter side terminal 351 is connected to the duplexer 25.
  • the high-frequency module 1 includes a mounting substrate 4, a plurality of external connection terminals 5, a first resin member 61, a second resin member 62, and a shield layer 63.
  • the high frequency module 1 can be electrically connected to an external board (not shown).
  • the external board corresponds to, for example, the mother board of the communication device 8 (mobile phone, communication device, etc.).
  • the high frequency module 1 can be electrically connected to the external board not only when the high frequency module 1 is directly mounted on the external board but also when the high frequency module 1 is indirectly mounted on the external board. Including the case where it is done.
  • the case where the high frequency module 1 is indirectly mounted on the external board is a case where the high frequency module 1 is mounted on another high frequency module mounted on the external board.
  • the mounting board 4 has a first main surface 41 and a second main surface 42.
  • the first main surface 41 and the second main surface 42 face each other in the thickness direction D1 of the mounting substrate 4.
  • the second main surface 42 faces the external substrate when the high frequency module 1 is provided on the external substrate (not shown).
  • the mounting board 4 is a double-sided mounting board on which circuit components are mounted on each of the first main surface 41 and the second main surface 42.
  • the mounting substrate 4 is a multilayer substrate in which a plurality of dielectric layers are laminated.
  • the mounting substrate 4 has a plurality of conductor pattern portions 43 and a plurality of through electrodes 44.
  • the plurality of conductor pattern portions 43 include conductor pattern portions set to the ground potential.
  • the plurality of through electrodes 44 are used for electrical connection between the element mounted on the first main surface 41 and the conductor pattern portion 43 of the mounting substrate 4. Further, the plurality of through electrodes 44 are electrically connected to the element mounted on the first main surface 41 and the element mounted on the second main surface 42, and the conductor pattern portion 43 of the mounting substrate 4 and the outside. It is used for electrical connection with the connection terminal 5.
  • a first power amplifier 21 and a duplexer 25 are arranged on the first main surface 41 of the mounting board 4. Further, a plurality of inductors 361 to 363 of the first low-pass filter 32 are arranged on the first main surface 41 of the mounting board 4.
  • a switch IC including a plurality of circuit elements other than the inductors 361 to 363 in the switch module 3 is arranged on the second main surface 42 of the mounting board 4. Further, a plurality of external connection terminals 5 are arranged on the second main surface 42 of the mounting board 4.
  • the first power amplifier 21 is arranged on the first main surface 41 of the mounting board 4.
  • the first power amplifier 21 is mounted on the first main surface 41 of the mounting board 4.
  • a part of the first power amplifier 21 may be mounted on the first main surface 41 of the mounting board 4, and the rest of the first power amplifier 21 may be mounted on the mounting board 4.
  • the first power amplifier 21 is arranged on the first main surface 41 side of the second main surface 42 on the mounting board 4, and has at least a portion mounted on the first main surface 41.
  • the duplexer 25 shown in FIG. 3 includes a first transmission filter 22 (see FIG. 1) and a first reception filter 23 (see FIG. 1).
  • the first transmission filter 22 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators.
  • the surface acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves.
  • the first transmit filter 22 may include at least one of an inductor and a capacitor connected in series with any of the plurality of series arm resonators, or an inductor connected in series with any of the plurality of parallel arm resonators. Alternatively, a capacitor may be included.
  • the first receiving filter 23 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators.
  • the surface acoustic wave filter is, for example, a SAW filter that utilizes a surface acoustic wave.
  • the first receive filter 23 may include at least one of an inductor and a capacitor connected in series with any one of the plurality of series arm resonators, or an inductor connected in series with any one of the plurality of parallel arm resonators. Alternatively, a capacitor may be included.
  • the duplexer 25 is arranged on the first main surface 41 of the mounting board 4.
  • the duplexer 25 is mounted on the first main surface 41 of the mounting board 4.
  • a part of the duplexer 25 may be mounted on the first main surface 41 of the mounting board 4, and the rest of the duplexer 25 may be mounted on the mounting board 4.
  • the duplexer 25 is arranged on the first main surface 41 side of the second main surface 42 on the mounting substrate 4, and has at least a portion mounted on the first main surface 41.
  • the switch IC 39 of the switch module 3 excluding the plurality of inductors 361 to 363 is arranged on the second main surface 42 of the mounting board 4 as shown in FIG.
  • the switch IC 39 is mounted on, for example, the second main surface 42 of the mounting board 4.
  • a part of the switch IC 39 may be mounted on the second main surface 42 of the mounting board 4, and the rest of the switch IC 39 may be mounted on the mounting board 4.
  • the switch IC 39 is arranged on the second main surface 42 side of the first main surface 41 on the mounting board 4, and has at least a portion mounted on the second main surface 42.
  • the switch IC 39 may be arranged on the first main surface 41 of the mounting board 4.
  • the switch IC 39 may be mounted on the first main surface 41 of the mounting board 4, for example.
  • a part of the switch IC 39 may be mounted on the first main surface 41 of the mounting board 4, and the rest of the switch IC 39 may be mounted on the mounting board 4.
  • the switch IC 39 is arranged on the first main surface 41 side of the second main surface 42 on the mounting board 4, and has at least a portion mounted on the first main surface 41.
  • the plurality of external connection terminals 5 are terminals for electrically connecting the mounting board 4 and the external board (not shown).
  • the plurality of external connection terminals 5 include a first antenna terminal 51, a first input terminal 52, a first output terminal 53, and a plurality of ground terminals shown in FIG.
  • the plurality of external connection terminals 5 are arranged on the second main surface 42 side of the mounting board 4.
  • the plurality of external connection terminals 5 are columnar (for example, columnar) electrodes provided on the second main surface 42 of the mounting substrate 4.
  • the material of the plurality of external connection terminals 5 is, for example, a metal (for example, copper, copper alloy, etc.).
  • Each of the plurality of external connection terminals 5 has a base end portion joined to the second main surface 42 of the mounting board 4 and a tip end portion on the opposite side to the base end portion in the thickness direction D1 of the mounting board 4.
  • Each tip of the plurality of external connection terminals 5 may include, for example, a gold plating layer.
  • the high frequency module 1 is provided with a plurality of external connection terminals 5 from the viewpoint of mountability of the high frequency module 1 on the mother substrate, increasing the number of ground terminals of the high frequency module 1, and the like.
  • the first resin member 61 is provided on the first main surface 41 of the mounting substrate 4, and is arranged on the first main surface 41. It covers the circuit element and the first main surface 41 of the mounting board 4.
  • the first resin member 61 has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit element arranged on the first main surface 41.
  • the second resin member 62 is provided on the second main surface 42 of the mounting board 4, and is a circuit element arranged on the second main surface 42 and the second main surface of the mounting board 4. It covers 42.
  • the second resin member 62 has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit element arranged on the second main surface 42.
  • the first power amplifier 21 and the duplexer 25 are arranged on the first main surface 41 side of the mounting board 4. Further, the plurality of inductors 361 to 363 are arranged on the first main surface 41 side of the mounting substrate 4.
  • the switch IC 39 is arranged on the second main surface 42 side of the mounting board 4. That is, the DTCs 364 and 365 are arranged on the second main surface 42 side of the mounting board 4.
  • the high frequency module 1 can be made smaller than the case where the inductors 361 to 363 are arranged on the same main surface side as the DTC 364 and 365.
  • the inductors 361 to 363 overlap with the switch IC 39 in a plan view from the thickness direction D1 of the mounting substrate 4.
  • the path connecting the inductors 361 to 363 and the switch IC 39 can be shortened, so that the loss due to the length of the path can be reduced.
  • the inductors 361 to 363 overlap with the DTC 364 and 365 in the plan view from the thickness direction D1 of the mounting substrate 4.
  • the path connecting the inductors 361 to 363 and the DTC 364, 365 can be shortened, so that the loss due to the length of the path can be reduced.
  • the mounting board 4 shown in FIG. 3 is, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) board, or the like.
  • the mounting substrate 4 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductor pattern portions 43.
  • the plurality of dielectric layers and the plurality of conductor pattern portions 43 are laminated in the thickness direction D1 of the mounting substrate 4.
  • the plurality of conductor pattern portions 43 are each formed in a predetermined pattern.
  • Each of the plurality of conductor pattern portions 43 includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 4.
  • the material of each conductor pattern portion 43 is, for example, copper.
  • the first main surface 41 and the second main surface 42 of the mounting board 4 are separated in the thickness direction D1 of the mounting board 4 and intersect with the thickness direction D1 of the mounting board 4.
  • the first main surface 41 of the mounting board 4 is orthogonal to, for example, the thickness direction D1 of the mounting board 4, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1.
  • the second main surface 42 of the mounting board 4 is orthogonal to, for example, the thickness direction D1 of the mounting board 4, but includes, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. You may.
  • the first main surface 41 and the second main surface 42 of the mounting substrate 4 may be formed with fine irregularities, concave portions or convex portions.
  • the first transmission filter 22 and the first reception filter 23 shown in FIG. 1 will be described.
  • the first transmission filter 22 and the first reception filter 23 constitute a duplexer 25.
  • the first transmission filter 22 and the first reception filter 23 are used as filters without distinction.
  • the filter is a 1-chip filter.
  • each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
  • the filter includes, for example, a substrate, a piezoelectric layer, and a plurality of IDT electrodes (Interdigital Transducers).
  • the substrate has a first surface and a second surface.
  • the piezoelectric layer is provided on the first surface of the substrate.
  • the piezoelectric layer is provided on the bass velocity film.
  • the plurality of IDT electrodes are provided on the piezoelectric layer.
  • the bass velocity film is provided directly or indirectly on the substrate. Further, the piezoelectric layer is provided directly or indirectly on the bass velocity film.
  • the sound velocity of the bulk wave propagating is slower than the sound velocity of the elastic wave propagating in the piezoelectric layer.
  • the sound velocity of the bulk wave propagating is faster than the sound velocity of the elastic wave propagating in the piezoelectric layer.
  • the material of the piezoelectric layer is, for example, lithium tantalate.
  • the material of the bass velocity film is, for example, silicon oxide.
  • the substrate is, for example, a silicon substrate.
  • the thickness of the piezoelectric layer is, for example, 3.5 ⁇ or less when the wavelength of the elastic wave determined by the electrode finger period of the IDT electrode is ⁇ .
  • the thickness of the bass sound film is, for example, 2.0 ⁇ or less.
  • the piezoelectric layer may be formed of, for example, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, or lead zirconate titanate.
  • the bass sound film may contain at least one material selected from the group consisting of silicon oxide, glass, silicon nitride, tantalum oxide, and a compound obtained by adding fluorine, carbon, or boron to silicon oxide.
  • the substrate is made of silicon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, crystal, alumina, zirconia, cozilite, mulite, steatite, forsterite, magnesia and diamond. It suffices to contain at least one material selected from the group.
  • the filter further includes, for example, a spacer layer and a cover member.
  • the spacer layer and the cover member are provided on the first surface of the substrate.
  • the spacer layer surrounds the plurality of IDT electrodes in a plan view from the thickness direction of the substrate.
  • the spacer layer has a frame shape (rectangular frame shape) in a plan view from the thickness direction of the substrate.
  • the spacer layer has electrical insulation.
  • the material of the spacer layer is, for example, a synthetic resin such as an epoxy resin or a polyimide.
  • the cover member has a flat plate shape.
  • the cover member has a rectangular shape in a plan view from the thickness direction of the substrate, but the cover member is not limited to this, and may be, for example, a square shape.
  • the outer size of the cover member, the outer size of the spacer layer, and the outer size of the cover member are substantially the same in a plan view from the thickness direction of the substrate.
  • the cover member is arranged in the spacer layer so as to face the substrate in the thickness direction of the substrate.
  • the cover member overlaps with the plurality of IDT electrodes in the thickness direction of the substrate and is separated from the plurality of IDT electrodes in the thickness direction of the substrate.
  • the cover member has electrical insulation.
  • the material of the cover member is, for example, a synthetic resin such as an epoxy resin or a polyimide.
  • the filter has a space surrounded by a substrate, a spacer layer, and a cover member. In the filter, the space contains gas.
  • the gas is, for example, air, an inert gas (for example, nitrogen gas) or the like.
  • the plurality of terminals are exposed from the cover member.
  • Each of the plurality of terminals is, for example, a bump.
  • Each bump is, for example, a solder bump.
  • Each bump is not limited to a solder bump, and may be, for example, a gold bump.
  • the filter may include, for example, an adhesion layer interposed between the bass velocity film and the piezoelectric layer.
  • the adhesion layer is made of, for example, a resin (epoxy resin, polyimide resin).
  • the filter may be provided with a dielectric film between the low sound velocity film and the piezoelectric layer, either on the piezoelectric layer or below the low sound velocity film.
  • the filter may include, for example, a hypersonic film interposed between the substrate and the hypersonic film.
  • the hypersonic film is provided directly or indirectly on the substrate.
  • the low sound velocity film is provided directly or indirectly on the high sound velocity film.
  • the piezoelectric layer is provided directly or indirectly on the bass velocity film.
  • the sound velocity of the bulk wave propagating is faster than the sound velocity of the elastic wave propagating in the piezoelectric layer.
  • the sound velocity of the bulk wave propagating is slower than the sound velocity of the elastic wave propagating in the piezoelectric layer.
  • the treble film is diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, lithium niobate, piezoelectric materials such as crystal, alumina, zirconia, cordierite, mulite, steatite. , Various ceramics such as forsterite, magnesia, diamond, or a material containing each of the above materials as a main component, and a material containing a mixture of the above materials as a main component.
  • the piezoelectric substrate may have an adhesion layer, a dielectric film, or the like as a film other than the hypersonic film, the low sound velocity film, and the piezoelectric layer.
  • Each of the plurality of series arm resonators and the plurality of parallel arm resonators is not limited to the above-mentioned surface acoustic wave resonators, and may be, for example, a SAW resonator or a BAW (Bulk Acoustic Wave) resonator.
  • the SAW resonator includes, for example, a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate.
  • the filter has a plurality of IDTs having a one-to-one correspondence with the plurality of series arm resonators on one piezoelectric substrate.
  • the piezoelectric substrate is, for example, a lithium tantalate substrate, a lithium niobate substrate, or the like.
  • the switch IC 39 shown in FIGS. 1 and 3 is, for example, a one-chip IC including a substrate and a switch function unit.
  • the substrate has a first surface and a second surface facing each other.
  • the substrate is, for example, a silicon substrate.
  • the switch function unit includes a FET (Field Effect Transistor) formed on the first surface of the substrate.
  • the switch function unit is a function unit having a function of switching the connection state.
  • the switch IC 39 is flip-chip mounted on the second main surface 42 of the mounting board 4 so that the first surface of the board is on the second main surface 42 side of the mounting board 4.
  • the outer peripheral shape of the switch IC 39 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 4.
  • the first power amplifier 21 shown in FIG. 1 is, for example, a one-chip IC including a substrate and an amplification function unit.
  • the substrate has a first surface and a second surface facing each other.
  • the substrate is, for example, a gallium arsenide substrate.
  • the amplification function unit includes at least one transistor formed on the first surface of the substrate.
  • the amplification function unit is a function unit having a function of amplifying a transmission signal in a predetermined frequency band.
  • the transistor is, for example, an HBT (Heterojunction Bipolar Transistor).
  • HBT Heterojunction Bipolar Transistor
  • the first power amplifier 21 may include, for example, a capacitor for cutting DC in addition to the amplification function unit.
  • the first power amplifier 21 is flip-chip mounted on the first main surface 41 of the mounting board 4, for example, so that the first surface of the board is on the first main surface 41 side of the mounting board 4.
  • the outer peripheral shape of the first power amplifier 21 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting substrate 4.
  • the first low noise amplifier 24 shown in FIG. 1 is, for example, one IC chip including a substrate and an amplification function unit.
  • the substrate has a first surface and a second surface facing each other.
  • the substrate is, for example, a silicon substrate.
  • the amplification function unit is formed on the first surface of the substrate.
  • the amplification function unit is a function unit having a function of amplifying a received signal in a predetermined frequency band.
  • the first low noise amplifier 24 is, for example, flip-chip mounted on the second main surface 42 of the mounting board 4 so that the first surface of the board is on the second main surface 42 side of the mounting board 4.
  • the outer peripheral shape of the first low noise amplifier 24 is a quadrangular shape in a plan view from the thickness direction D1 of the mounting board 4.
  • the communication device 8 includes a high-frequency module 1, another high-frequency module 7, an antenna 81, a signal processing circuit 82, and a diplexer 85.
  • the diplexer 85 is composed of a low-pass filter 86 and a high-pass filter 87.
  • the high frequency module 7 includes a second power amplifier 71, a second transmission filter 72, a second reception filter 73, and a second low noise amplifier 74. .. Further, the high frequency module 7 includes a second antenna switch 76 and a second low-pass filter 77. The second transmission filter 72 and the second reception filter 73 constitute a duplexer 75.
  • the second power amplifier 71 shown in FIG. 1 is an amplifier that amplifies the second transmission signal.
  • the second power amplifier 71 is provided between the second input terminal 702 and the second transmission filter 72 in the second transmission path P12 connecting the second antenna terminal 701 and the second input terminal 702.
  • the second power amplifier 71 has an input terminal 711 and an output terminal 712.
  • the input terminal 711 of the second power amplifier 71 is connected to an external circuit (for example, a signal processing circuit 82) via the second input terminal 702.
  • the second input terminal 702 is a terminal in which a high frequency signal (second transmission signal) from an external circuit is input to the high frequency module 1.
  • the output terminal 712 of the second power amplifier 71 is connected to the second transmission filter 72.
  • the second power amplifier 71 is controlled by, for example, a power amplifier controller (not shown).
  • the second power amplifier 71 may be directly or indirectly connected to the second transmission filter 72.
  • the second power amplifier 71 may be connected to the second transmission filter 72 via, for example, a second output matching circuit (not shown).
  • the second output matching circuit is provided between the second power amplifier 71 and the second transmission filter 72 in the second transmission path P12.
  • the second output matching circuit performs impedance matching between the second power amplifier 71 and the second transmission filter 72.
  • the second transmission filter 72 is a transmission filter of the second communication band through which the second transmission signal is passed. More specifically, the second transmission filter 72 is provided between the second power amplifier 71 and the second antenna switch 76 in the second transmission path P12. The second transmission filter 72 passes the transmission signal in the transmission band of the second communication band, that is, the second transmission signal, among the high frequency signals amplified by the second power amplifier 71.
  • the second reception filter 73 is a reception filter of the second communication band through which the second reception signal is passed. More specifically, the second receiving filter 73 is provided between the second antenna switch 76 and the second low noise amplifier 74 in the second receiving path P22 connecting the second antenna terminal 701 and the second output terminal 703. ing. The second reception filter 73 passes the reception signal in the reception band of the second communication band, that is, the second reception signal, among the high frequency signals input from the second antenna terminal 701.
  • the second low noise amplifier 74 is an amplifier that amplifies the second received signal with low noise.
  • the second low noise amplifier 74 is provided between the second reception filter 73 and the second output terminal 703 of the second reception path P22.
  • the second low noise amplifier 74 has an input terminal 741 and an output terminal 742.
  • the input terminal 741 of the second low noise amplifier 74 is connected to the second reception filter 73.
  • the output terminal 742 of the second low noise amplifier 74 is connected to an external circuit (for example, a signal processing circuit 82) via the second output terminal 703.
  • the second output terminal 703 is a terminal for outputting a high frequency signal (second received signal) from the second low noise amplifier 74 to an external circuit.
  • the second reception filter 73 and the second low noise amplifier 74 are reception circuit elements provided in the signal path for the reception signal of the second communication band higher than the first communication band.
  • the second antenna switch 76 shown in FIG. 1 is a switch for switching the path connected to the antenna 81.
  • the second antenna switch 76 has a common terminal 761 and a plurality of (three in the illustrated example) selection terminals 762 to 764.
  • the common terminal 761 is connected to the second low-pass filter 77.
  • the selection terminal 762 of the plurality of selection terminals 762 to 764 is connected to the duplexer 75.
  • the common terminal 761 is connected to the second antenna terminal 701.
  • the second antenna switch 76 switches the connection state between the common terminal 761 and the plurality of selection terminals 762 to 764.
  • the second antenna switch 76 is controlled by, for example, the signal processing circuit 82.
  • the second antenna switch 76 electrically connects the common terminal 761 and any one of the plurality of selection terminals 762 to 764 according to the control signal from the RF signal processing circuit 83 of the signal processing circuit 82.
  • the second low-pass filter 77 has a second transmission path P12 between the second antenna terminal 701 and the second power amplifier 71, and the second antenna terminal 701 and the second low noise. It is provided in the second reception path P22 between the amplifier 74 and the amplifier 74.
  • the second low-pass filter 77 attenuates the harmonic component of the second transmission signal.
  • the antenna 81 is connected to the first antenna terminal 51 of the high frequency module 1.
  • the antenna 81 has a transmission function of radiating a first transmission signal output from the high frequency module 1 by radio waves, and a reception function of receiving the first reception signal as radio waves from the outside and outputting the first reception signal to the high frequency module 1.
  • the signal processing circuit 82 includes an RF signal processing circuit 83 and a baseband signal processing circuit 84.
  • the signal processing circuit 82 processes the first transmission signal and the first reception signal, and the second transmission signal and the second reception signal.
  • the RF signal processing circuit 83 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal.
  • RFIC Radio Frequency Integrated Circuit
  • the RF signal processing circuit 83 performs signal processing such as up-conversion on the high frequency signal output from the baseband signal processing circuit 84, and outputs the processed high frequency signal to the high frequency module 1. Specifically, the RF signal processing circuit 83 performs signal processing such as up-conversion on the first transmission signal output from the baseband signal processing circuit 84, and the signal-processed first transmission signal has a high frequency. Output to the first transmission path P11 of the module 1. Further, the RF signal processing circuit 83 performs signal processing such as up-conversion on the second transmission signal output from the baseband signal processing circuit 84, and the signal-processed second transmission signal of the high-frequency module 1 is used. Output to the second transmission path P12.
  • the RF signal processing circuit 83 performs signal processing such as down-conversion on the high frequency signal output from the high frequency module 1, and outputs the processed high frequency signal to the base band signal processing circuit 84. Specifically, the RF signal processing circuit 83 performs signal processing on the first received signal output from the first receiving path P21 of the high frequency module 1, and uses the processed first received signal as a base band. Output to the signal processing circuit 84. Further, the RF signal processing circuit 83 performs signal processing on the second received signal output from the second receiving path P22 of the high frequency module 1, and uses the processed second received signal as the base band signal processing circuit. Output to 84.
  • the baseband signal processing circuit 84 is, for example, a BBIC (Baseband Integrated Circuit), and performs predetermined signal processing on a transmission signal from the outside of the signal processing circuit 82.
  • the received signal processed by the baseband signal processing circuit 84 is used, for example, as an image signal as an image signal for displaying an image, or as an audio signal for a call.
  • the RF signal processing circuit 83 also has a function as a control unit that controls the connection of the first antenna switch 31 of the high frequency module 1 based on the communication band (frequency band) used. Specifically, the RF signal processing circuit 83 switches the connection of the first antenna switch 31 of the high frequency module 1 by a control signal (not shown).
  • the control unit may be provided outside the RF signal processing circuit 83, and may be provided, for example, in the high frequency module 1 or the baseband signal processing circuit 84.
  • the first low-pass filter 32 has a second path having a reactance smaller than that of the first path, in addition to the first path. As a result, the loss in the first low-pass filter 32 can be reduced by passing the transmission signal or the reception signal through the second path.
  • the first low-pass filter 32 has a first path passing through DTC 364, 365 and a second path bypassing DTC 364, 365. As a result, the loss in the first low-pass filter 32 can be reduced by passing the transmission signal or the reception signal through the second path.
  • the transmission signal passes through the first path, and the reception signal passes through the second path, which has a smaller reactance than the first path.
  • the first low-pass filter 32 is an LC filter, and the capacitor of the LC filter is a digital tunable capacitor (DTC364,365).
  • DTC364,365 digital tunable capacitor
  • the inductors 361 to 363 are arranged on the first main surface 41 side of the mounting board 4, and the digital tunable capacitor (DTC364,365) is arranged on the second main surface 42 side of the mounting board 4. Is located in.
  • the high frequency module 1 can be made smaller than the case where the inductors 361 to 363 are arranged on the same main surface side as the DTC 364 and 365.
  • the digital tunable capacitor (DTC364,365) is included in the switch IC39.
  • the installation area of the DTC 364 and 365 can be reduced, so that the high frequency module 1 can be further reduced in size.
  • the inductors 361 to 363 overlap with the switch IC 39 in a plan view from the thickness direction D1 of the mounting substrate 4.
  • the path connecting the inductors 361 to 363 and the switch IC 39 can be shortened, so that the loss due to the length of the path can be reduced.
  • the inductors 361 to 363 overlap with the digital tunable capacitors (DTC364,365) in a plan view from the thickness direction D1 of the mounting substrate 4.
  • the path connecting the inductors 361 to 363 and the DTC 364, 365 can be shortened, so that the loss due to the length of the path can be reduced.
  • the high frequency module 1 may include a switch module 3a as shown in FIG. 4 instead of the switch module 3 (see FIG. 2).
  • the switch module 3a of the modification 1 includes a first antenna switch 31, a first low-pass filter 32a, and a control circuit 33. Further, the switch module 3a includes a first antenna side terminal 34 and a plurality of (three in the illustrated example) first filter side terminals 35.
  • the first low-pass filter 32a includes an inductor 371, a plurality of (two in the illustrated example) capacitors 372,373, and a plurality of (three in the illustrated example) switches 374 to 376.
  • the inductor 371 is connected between the first antenna switch 31 and the first antenna side terminal 34.
  • Each of the plurality of capacitors 372 and 373 is connected between the first antenna switch 31 and the first antenna side terminal 34.
  • the switch 375 is connected in series with the capacitor 372 between the first antenna switch 31 and the first antenna side terminal 34.
  • the series circuit of the capacitor 372 and the switch 375 is connected in parallel with the inductor 371.
  • the switch 376 is connected in series with the capacitor 373 between the first antenna switch 31 and the first antenna side terminal 34.
  • the series circuit of the capacitor 373 and the switch 376 is connected in parallel with the inductor 371.
  • the switch 374 is connected in parallel between the first antenna switch 31 and the first antenna side terminal 34 with the series circuit of the capacitor 372 and the switch 375 and the series circuit of the capacitor 373 and the switch 376.
  • the first low-pass filter 32a having the circuit configuration as described above turns off the switch 374 and turns on at least one of the switches 375 and 376, so that the transmission signal passes through the transmission path. Increase the reactance. As a result, the first low-pass filter 32a can attenuate the harmonic component of the transmission signal.
  • the switch 374 is turned on and the switches 375 and 376 are turned off to reduce the reactance of the receiving path through which the received signal passes. Thereby, the loss when the received signal passes can be reduced.
  • the path connecting the first antenna switch 31 and the first antenna side terminal 34 when the switch 374 is turned off and at least one of the switches 375 and 376 is turned on is provided. This is the first route. Further, in the first low-pass filter 32a, the path connecting the first antenna switch 31 and the first antenna side terminal 34 when the switch 374 is turned on and the switches 375 and 376 are turned off is the second path.
  • the first path is a path that passes through at least one of the capacitor 372 and the capacitor 373
  • the second path is a path that bypasses the capacitor 372 and the capacitor 373.
  • the high frequency module 1 may include a switch module 3b as shown in FIG. 5 instead of the switch module 3 (see FIG. 2).
  • the switch module 3b of the modification 2 includes a first antenna switch 31, a first low-pass filter 32b, and a control circuit 33. Further, the switch module 3b includes a first antenna side terminal 34 and a plurality of (three in the illustrated example) first filter side terminals 35.
  • the first low-pass filter 32b includes an inductor 381, a plurality of (two in the illustrated example) capacitors 382 and 383, and a plurality of (two in the illustrated example) switches 384 and 385.
  • the inductor 381 is connected between the first antenna switch 31 and the first antenna side terminal 34.
  • Each of the plurality of capacitors 382 and 383 is connected between the first antenna switch 31 and the first antenna side terminal 34.
  • the switch 384 is connected in series with the capacitor 382 between the first antenna switch 31 and the first antenna side terminal 34.
  • the series circuit of the capacitor 382 and the switch 384 is connected in parallel with the inductor 381.
  • the switch 385 is connected in series with the capacitor 383 between the first antenna switch 31 and the first antenna side terminal 34.
  • the series circuit of the capacitor 383 and the switch 385 is connected in parallel with the inductor 381.
  • the first low-pass filter 32b having the circuit configuration as described above increases the reactance of the transmission path through which the transmission signal passes by turning on both the switches 384 and 385 when the transmission signal passes through. As a result, the first low-pass filter 32b can attenuate the harmonic component of the transmission signal.
  • the reactance of the receiving path through which the received signal passes is reduced by turning off at least one of the switches 384 and 385. Thereby, the loss when the received signal passes can be reduced.
  • the path connecting the first antenna switch 31 and the first antenna side terminal 34 when both the switches 384 and 385 are turned on is the first path. Further, in the first low-pass filter 32b, the path connecting the first antenna switch 31 and the first antenna side terminal 34 when at least one of the switches 384 and 385 is turned off is the second path.
  • the high frequency module 1c may include a plurality of external connection terminals 5c as shown in FIG. 6 instead of the plurality of external connection terminals 5 (see FIG. 3).
  • the plurality of external connection terminals 5c have a bump structure instead of a columnar electrode.
  • the plurality of external connection terminals 5c are arranged on the second main surface 42 of the mounting board 4.
  • the second resin member 62 (see FIG. 3) is omitted.
  • the first transmission filter 22 and the second transmission filter 72 are not limited to surface acoustic wave filters, but are filters other than surface acoustic wave filters. You may.
  • the first transmission filter 22 and the second transmission filter 72 may be, for example, any of an elastic wave filter using BAW (Bulk Acoustic Wave), an LC resonance filter, and a dielectric filter.
  • BAW Bulk Acoustic Wave
  • the high frequency module according to each of the above modifications also has the same effect as the high frequency module 1 according to the embodiment.
  • the "path that bypasses the capacitor” includes a path that is branched from both ends of the capacitor without passing through the capacitor and a path that passes through the capacitor whose capacitance is 0 or a value close to 0.
  • the "capacitor” includes a DTC.
  • the high frequency module (1; 1c) includes an antenna terminal (first antenna terminal 51), a power amplifier (first power amplifier 21), a low noise amplifier (first low noise amplifier 24), and a low-pass filter.
  • First low-pass filter 32; 32a; 32b The low-pass filter is provided in the transmission path (first transmission path P11) and the reception path (first reception path P21).
  • the transmission path is a path between the antenna terminal and the power amplifier.
  • the reception path is a path between the antenna terminal and the low noise amplifier.
  • the low-pass filter has a plurality of paths. Each of the plurality of routes constitutes at least a part of a transmission route and a reception route.
  • the plurality of routes have a first route and a second route.
  • the second path has a smaller reactance than the first path.
  • At least one of the transmission signal passing through the transmission path (first transmission path P11) and the reception signal passing through the reception path (first reception path P21) is the second.
  • the loss in the low-pass filter first low-pass filter 32; 32a; 32b
  • the high frequency module (1; 1c) includes an antenna terminal (first antenna terminal 51), a power amplifier (first power amplifier 21), a low noise amplifier (first low noise amplifier 24), and a low-pass filter.
  • First low-pass filter 32; 32a The low-pass filter is provided in the transmission path (first transmission path P11) and the reception path (first reception path P21).
  • the transmission path is a path between the antenna terminal and the power amplifier.
  • the reception path is a path between the antenna terminal and the low noise amplifier.
  • the low-pass filter has a plurality of paths. Each of the plurality of routes constitutes at least a part of a transmission route and a reception route.
  • the low-pass filter includes an inductor (361; 362; 363; 371) and a capacitor (DTC364; 365, capacitor 372; 373).
  • the plurality of routes have a first route and a second route.
  • the first path is a path that passes through the capacitor.
  • the second path is a path that bypasses the capacitor.
  • At least one of the transmission signal passing through the transmission path (first transmission path P11) and the reception signal passing through the reception path (first reception path P21) is the second.
  • the loss in the low-pass filter (first low-pass filter 32; 32a) can be reduced.
  • the low-pass filter in the high frequency module (1; 1c) according to the third aspect, transmits through the transmission path (first transmission path P11). The signal goes through the first path. The received signal passing through the receiving path (first receiving path P21) passes through the second path.
  • the high frequency module (1; 1c) according to the third aspect, it is possible to suppress an increase in the loss of the received signal while attenuating the harmonic component of the transmitted signal.
  • the low-pass filter (first low-pass filter 32; 32a; 32b) is an inductor (361; 362; 363). ) And the capacitor.
  • the capacitor is a digital tunable capacitor (DTC364; 365).
  • the low-pass filter (first low-pass filter 32; 32a; 32b) depends on whether the signal passes through the first path or the second path.
  • the cutoff frequency of can be changed. Further, the cutoff frequency of the low-pass filter can be changed according to the communication band of the signal passing through the first path.
  • the high frequency module (1; 1c) further includes a mounting board (4) and an external connection terminal (5) in the fourth aspect.
  • the mounting substrate (4) has a first main surface (41) and a second main surface (42) facing each other.
  • the external connection terminal (5) is arranged on the second main surface (42) side of the mounting board (4).
  • the inductors (361; 362; 363) are arranged on the first main surface (41) side.
  • the digital tunable capacitor (DTC364; 365) is arranged on the second main surface (42) side.
  • the high frequency module (1; 1c) according to the fifth aspect, as compared with the case where the inductor (361; 362; 363) is arranged on the same main surface side as the digital tunable capacitor (DTC364; 365).
  • the high frequency module (1; 1c) can be miniaturized.
  • the high frequency module (1; 1c) further includes an antenna switch (first antenna switch 31) in the fifth aspect.
  • the antenna switch is a switch for switching the path connected to the antenna (81).
  • a digital tunable capacitor (DTC364; 365) is included in the switch IC (39) along with the antenna switch.
  • the installation area of the digital tunable capacitor (DTC364; 365) can be reduced, so that the high frequency module (1; 1c) can be further miniaturized. Can be done.
  • the inductor (361; 362; 363) is a switch in a plan view from the thickness direction (D1) of the mounting substrate (4). It overlaps with the IC (39).
  • the path connecting the inductor (361; 362; 363) and the switch IC (39) can be shortened, which is caused by the length of the path. Loss can be reduced.
  • the inductor (361; 362; 363) is digital in the plan view from the thickness direction (D1) of the mounting substrate (4). It overlaps with a tunable capacitor (DTC364; 365).
  • the path connecting the inductor (361; 362; 363) and the digital tunable capacitor (DTC364; 365) can be shortened, so that the path of the above path can be shortened.
  • the loss due to the length can be reduced.
  • the transmission signal and the reception path (first reception path P21) passing through the transmission path (first transmission path P11) ) Is a TDD signal.
  • the transmission signal and the reception path (first reception path P21) passing through the transmission path (first transmission path P11) The received signal passing through) is an FDD signal.
  • the communication device (8) according to the eleventh aspect includes a high frequency module (1; 1c) according to any one of the first to tenth aspects and a signal processing circuit (82).
  • the signal processing circuit (82) processes a transmission signal passing through the transmission path (first transmission path P11) and a reception signal passing through the reception path (first reception path P21).
  • the loss in the low-pass filter (first low-pass filter 32; 32a; 32b) can be reduced by passing the transmission signal or the reception signal through the second path. can.
  • 1,1c high frequency module 21 1st power amplifier (power amplifier) 211 Input terminal 212 Output terminal 22 1st transmission filter 23 1st reception filter 24 1st low noise amplifier (low noise amplifier) 241 Input terminal 242 Output terminal 25 Duplexer 3,3a, 3b Switch module 31 First antenna switch (antenna switch) 311 Common terminal 312 to 314 Selection terminals 32, 32a, 32b 1st low-pass filter (low-pass filter) 33 Control circuit 34 1st antenna side terminal 35,351 to 353 1st filter side terminal 361 to 363 Inductor 364,365 DTC (capacitor) 366,368 Capacitor 367 Inductor 371 Inductor 372,373 Capacitor 374-376 Switch 381 Inductor 382,383 Capacitor 384,385 Switch 39 Switch IC 4 Mounting board 41 1st main surface 42 2nd main surface 43 Conductor pattern part 44 Through electrodes 5, 5c External connection terminal 51 1st antenna terminal (antenna terminal

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Transceivers (AREA)

Abstract

La présente invention réduit la perte dans un filtre passe-bas. Un module haute fréquence (1) est pourvu d'une borne d'antenne, d'un amplificateur de puissance, d'un amplificateur à faible bruit et d'un filtre passe-bas. Le filtre passe-bas est disposé dans un trajet de transmission entre la borne d'antenne et l'amplificateur de puissance, et dans un trajet de réception entre la borne d'antenne et l'amplificateur à faible bruit. Le filtre passe-bas comprend une pluralité de trajets. Chacun de la pluralité de trajets constitue une partie du trajet de transmission et/ou du trajet de réception. La pluralité de trajets comprend un premier trajet et un second trajet. Le deuxième chemin a une réactance inférieure à celle du premier chemin.
PCT/JP2021/016490 2020-04-24 2021-04-23 Module haute fréquence et dispositif de communication WO2021215536A1 (fr)

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CN202180027905.6A CN115398810A (zh) 2020-04-24 2021-04-23 高频模块以及通信装置
US17/934,692 US20230017570A1 (en) 2020-04-24 2022-09-23 Radio-frequency module and communication device

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JP2012142695A (ja) * 2010-12-28 2012-07-26 Hitachi Metals Ltd 回路基板およびそれを用いた通信装置
US20150235971A1 (en) * 2014-02-14 2015-08-20 Peregrine Semiconductor Corporation Integrated Tunable Filter Architecture
JP2017168932A (ja) * 2016-03-14 2017-09-21 太陽誘電株式会社 フィルタ回路、フロントエンド回路およびモジュール

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