WO2021204050A1 - 一种半导体加工设备 - Google Patents

一种半导体加工设备 Download PDF

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Publication number
WO2021204050A1
WO2021204050A1 PCT/CN2021/084860 CN2021084860W WO2021204050A1 WO 2021204050 A1 WO2021204050 A1 WO 2021204050A1 CN 2021084860 W CN2021084860 W CN 2021084860W WO 2021204050 A1 WO2021204050 A1 WO 2021204050A1
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WIPO (PCT)
Prior art keywords
semiconductor processing
temporary storage
processing equipment
wafer
chamber
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PCT/CN2021/084860
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English (en)
French (fr)
Inventor
魏景峰
佘清
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020227031422A priority Critical patent/KR20220139968A/ko
Priority to EP21785661.6A priority patent/EP4135015A1/en
Priority to US17/918,077 priority patent/US20230162998A1/en
Priority to JP2022556577A priority patent/JP2023520317A/ja
Publication of WO2021204050A1 publication Critical patent/WO2021204050A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Definitions

  • This application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor processing equipment.
  • ALD Atomic Layer Deposition
  • CVD Chemical Vapor Deposition
  • the present application discloses a semiconductor processing equipment, which can solve the problem of low productivity of the semiconductor processing equipment.
  • the embodiment of the present application discloses a semiconductor processing equipment for processing a wafer, the semiconductor processing equipment includes:
  • a plurality of equipment main bodies includes a transmission platform, and at least two reaction chambers are arranged in the circumferential direction of the transmission platform;
  • Temporary storage channel any two adjacent equipment main bodies are connected through the temporary storage channel, and the temporary storage channel is used to temporarily store the wafer;
  • One of a plurality of the apparatus main bodies is connected to the vacuum interlocking chamber, and the transfer platform can be between the vacuum interlocking chamber and the reaction chamber, the temporary storage channel and the The wafer is transferred between the vacuum interlocking chambers and between the temporary storage channel and the reaction chamber.
  • the layout of the semiconductor processing equipment is adjusted so that multiple device bodies are superimposed and combined, that is, the temporary storage channel is used to realize the communication between two adjacent device bodies, and each Each device body has at least two reaction chambers.
  • This layout of semiconductor processing equipment can effectively increase the number of reaction chambers compared with the existing process modules that can only be arranged around a single transfer platform, thereby increasing the number of reaction chambers.
  • the production capacity of the semiconductor processing equipment improves the product competitiveness of the semiconductor processing equipment.
  • FIG. 1 is a schematic diagram of a semiconductor processing equipment disclosed in an embodiment of the application
  • FIG. 2 is a schematic diagram of a semiconductor processing equipment disclosed in another embodiment of the application.
  • an embodiment of the present application discloses a semiconductor processing equipment, which is used to process wafers.
  • the disclosed semiconductor processing equipment includes a vacuum interlocking chamber 100 and a plurality of equipment main bodies 200 And temporary storage channel 300.
  • the vacuum interlock chamber (Load-Lock Chamber) 100 can realize the conversion between the vacuum state and the atmospheric state.
  • the vacuum interlock chamber 100 can be converted to the vacuum state, it can realize the semiconductor processing in the vacuum state. Wafers are transferred into or out of the equipment, that is, the vacuum interlocking chamber 100 can be used as a transition chamber to realize the temporary storage and transfer of wafers, thereby facilitating the loading and unloading operations of the semiconductor processing equipment.
  • the temporary storage channel 300 can also be used to temporarily store wafers.
  • the temporary storage channel 300 is set between any two adjacent device main bodies 200, and the temporary storage channel 300 is connected to the two adjacent device main bodies 200. , So that the vacuum degree of the temporary storage channel 300 is consistent with the vacuum degree inside the device main body 200.
  • the wafer temporarily stored in the temporary storage channel structure 300 may be a wafer before processing, or a wafer after processing, that is, the vacuum interlocking chamber 100 and the temporary storage channel 300 are semiconductor processing equipment
  • the transition module for loading and unloading facilitates the loading and unloading operations of semiconductor processing equipment.
  • the device main body 200 includes a transfer platform 210, and at least two reaction chambers 220 are arranged in the circumferential direction of the transfer platform 210.
  • the transfer platform 210 can transfer wafers to complete the loading and unloading of semiconductor processing equipment, specifically, the transfer platform 210
  • the transmission platform 210 is provided with a transmission device such as a robot.
  • the transfer platform 210 may also adopt a method of adsorption (for example, vacuum adsorption, magnetic adsorption, etc.) to realize the transfer of the workpiece to be processed.
  • the wafer can be processed in the reaction chamber 220.
  • the plurality of device bodies 200 may include a first device body and a second device body.
  • the first device body includes a first transfer platform that is connected to the vacuum interlocking chamber 100 and is in the circumferential direction of the first transfer platform. At least two first reaction chambers are arranged; the second device body includes a second transmission platform, which is connected to the first transmission platform through the temporary storage channel 300, and is arranged in the circumferential direction of the second transmission platform. At least two second reaction chambers are arranged.
  • the first transfer platform connected to the vacuum interlocking chamber 100 is between the vacuum interlocking chamber 100 and the reaction chamber 220, between the temporary storage channel 300 and the vacuum interlocking chamber 100, and between the temporary storage channel 300 and the reaction chamber.
  • the wafers are transferred between the chambers 220; the second transfer platform not connected to the vacuum interlocking chamber 100 transfers the wafers between the temporary storage channel 300 and the reaction chamber 220, thereby realizing the loading and unloading cycle of the semiconductor processing equipment.
  • the first reaction chamber and the second reaction chamber are the core components for wafer processing.
  • the wafer can be processed in both the first reaction chamber and the second reaction chamber.
  • first reaction chamber and the structure and process principle of the second reaction chamber are all known technologies, and for the sake of brevity, the details are not repeated here.
  • first reaction chambers form a first process module, that is, a first process module generally includes an even number of first reaction chambers.
  • second reaction chambers constitute a second process module, that is, a second process module generally includes an even number of second reaction chambers.
  • the first reaction chamber and the second reaction chamber may be the same wafer processing apparatus, and both are the reaction chamber 220 described above, that is, the first reaction chamber and the second reaction chamber
  • the structure and process principle of the two reaction chambers are the same, so that the same process can be performed on the workpiece to be processed.
  • the first process module and the second process module can be the same process module.
  • the process of designing the semiconductor processing equipment there is no need to design multiple different process modules, only the process modules need to be repeatedly combined.
  • the modular design of semiconductor processing equipment is realized, thereby facilitating the design work of designers, simplifying the design workload, and improving the design efficiency of semiconductor processing equipment.
  • the first reaction chamber and the second reaction chamber may be different wafer processing apparatuses, which are not limited in the embodiment of the present application.
  • the first transmission platform and the second transmission platform may both be the transmission platform 210 described above.
  • the first device body and the second device body can also be the same device body, both of which are the device body 200 described above.
  • the main body of the equipment only needs to repeatedly combine the main body of the equipment and realize the connection between the main parts of the equipment through the temporary storage channel, which further improves the degree of modular design of semiconductor processing equipment, further facilitates the design work of designers, and simplifies the design workload , Improve the design efficiency of semiconductor processing equipment.
  • the first device body and the second device body can also be designed as different device bodies, so that the first device body and the second device body can meet actual needs. There is no restriction on this in the application embodiment.
  • one of the plurality of equipment main bodies 200 is connected to the vacuum interlocking chamber 100, that is, the first equipment main body is connected to the vacuum interlocking chamber 100, and the wafers outside the semiconductor processing equipment are interlocked by vacuum.
  • the chamber 100 enters the equipment main body 200 for processing, or the processed wafers in the equipment main body 200 are transferred out of the semiconductor processing equipment through the vacuum interlocking chamber 100 to realize the loading and unloading cycle of the semiconductor processing equipment.
  • any two adjacent equipment main bodies 200 are connected through the temporary storage channel 300, and the transfer platform 210 can be between the vacuum interlocking chamber 100 and the reaction chamber 220, between the temporary storage channel 300 and the vacuum interlocking chamber 100, and The wafer is transferred between the temporary storage channel 300 and the reaction chamber 220 so that the wafer can be transferred to the reaction chamber 220 for processing, or the processed wafer is transferred out of the reaction chamber 220.
  • the temporary storage channel 300 is provided between the first device body and the second device body, and the first transfer platform is used between the vacuum interlocking chamber 100 and the first reaction chamber, and between the temporary storage channel 300 and the vacuum chamber.
  • the wafers are transferred between the interlocking chambers 100; the second transfer platform is used for transferring the wafers between the temporary storage channel 300 and the second reaction chamber.
  • the first transfer platform transfers the unprocessed wafers located on the vacuum interlocking chamber 100 to the first reaction chamber, so that the first reaction chamber completes the wafer processing.
  • the first transfer platform can also transfer the processed wafer in the first reaction chamber to the vacuum interlocking chamber 100 to complete a wafer processing flow.
  • the first transfer platform transfers the unprocessed wafers on the vacuum interlocking chamber 100 to the temporary storage channel 300, and then transfers the unprocessed wafers on the temporary storage channel 300 to the second reaction chamber through the second transfer platform Chamber, so that the second reaction chamber completes the process of wafer processing, and then the second transfer platform transfers the processed wafer in the second reaction chamber to the temporary storage channel 300, and the first transfer platform then transfers the temporary storage channel
  • the processed wafers on 300 are transferred to the vacuum interlocking chamber 100 to complete a wafer processing flow.
  • the number of the first device body may be multiple, or the number of the second device body may also be multiple.
  • the number of the first device body and the second device body may be multiple at the same time.
  • Multiple first device main bodies are superimposed and combined, or multiple second device main bodies are superimposed and combined.
  • multiple first device main bodies and multiple second device main bodies are mixed and superimposed, so that the semiconductor processing equipment has more first device main bodies.
  • the reaction chamber or the second reaction chamber enables the semiconductor processing equipment to process a plurality of wafers at the same time, thereby enabling the semiconductor processing equipment to have a higher productivity.
  • the layout of the semiconductor processing equipment is adjusted so that multiple device bodies 200 are superimposed and combined, that is, a temporary storage channel is used to realize the communication between two adjacent device bodies, and Each device body has at least two reaction chambers.
  • This layout of semiconductor processing equipment can effectively increase the number of reaction chambers compared with the existing process modules that can only be arranged around a single transfer platform. Improve the production capacity of the semiconductor processing equipment and improve the product competitiveness of the semiconductor processing equipment.
  • the semiconductor processing equipment may further include a semiconductor equipment front-end module 400 and a wafer loading port 500.
  • the semiconductor equipment front-end module 400 is a conventional EFEM (front end module of semiconductor equipment) currently on the market. ) Equipment, the semiconductor equipment front-end module 400 can efficiently transfer and position the wafer before the semiconductor processing equipment processes the wafer.
  • the wafer load port 500 is also a conventional load port device currently on the market. The specific structures and principles of the semiconductor device front-end module 400 and the wafer load port 500 are all known technologies. For the sake of brevity, the details are not repeated here.
  • the semiconductor equipment front-end module 400 may include a wafer transfer robot, and the wafer transfer robot is used to transfer wafers between the vacuum interlock chamber 100 and the wafer loading port 500. After the wafers are processed in other processing steps, the wafers are placed in the wafer loading port 500, and then the wafer transfer robot transfers the wafers in the wafer loading port 500 to the vacuum interlocking chamber 100 more accurately .
  • the combination of the semiconductor equipment front-end module 400 and the wafer loading port 500 can not only realize the automatic loading and unloading of wafers, but also ensure the accuracy of wafer loading and unloading and the speed of wafer loading and unloading, so as to make the semiconductor processing equipment reliable Stable operation.
  • a temporary storage table 110 may be provided in the vacuum interlocking chamber 100.
  • the temporary storage station 110 is used to temporarily store wafers.
  • One side of the vacuum interlocking chamber 100 is connected to the main body 200 of the device, and a first plug-in valve is provided at the connection between the two, and the other side of the vacuum interlocking chamber 100 It is connected to an external device (for example, a semiconductor device front-end module 400), and a second plug-in valve is provided at the connection between the two.
  • an external device for example, a semiconductor device front-end module 400
  • a second plug-in valve is provided at the connection between the two.
  • the external device mentioned here refers to the external device relative to the device main body 200, that is, the external device mentioned here may be a component of the semiconductor processing equipment.
  • the first insert valve is first opened so that the wafer transfer robot can transfer the wafer on the wafer loading port 500 to the temporary storage table 110, and then the first insert valve is closed.
  • Perform a vacuuming operation in the vacuum interlocking chamber 100 When the vacuum interlocking chamber 100 is in a vacuum environment, open the second plate valve, and then the transfer platform 210 will place the unprocessed wafer on the vacuum interlocking chamber 100 Transfer to the reaction chamber 220 or the temporary storage channel 300 to realize the wafer loading operation.
  • the vacuum operation in the vacuum interlocking chamber 100 is first performed.
  • the second plug-in valve When the vacuum interlocking chamber 100 is in a vacuum environment, the second plug-in valve is opened, and then the transfer platform 210 will be located in the reaction chamber.
  • the processed wafers on the chamber 220 or the temporary storage channel 300 are transferred to the temporary storage table 110, and then the second insert valve is closed, and the first insert valve is opened, so that the wafer transfer robot can transfer the wafers on the temporary storage table 110
  • the wafer is transferred to the wafer loading port 500 to realize the wafer unloading operation.
  • the first plug-in valve and the second plug-in valve can isolate the main body 200 of the equipment from the external equipment to prevent the vacuum environment in the main body 200 from being affected, thereby ensuring that the semiconductor processing equipment can have a better vacuum.
  • the environment is used to process wafers, thereby improving the reliability of the semiconductor processing equipment.
  • any two adjacent device bodies 200 are connected through the temporary storage channel 300, that is, the two sides of the temporary storage channel 300 are respectively connected to the first device body and the second device body.
  • the main body is in a vacuum environment. Therefore, there is no need to install a plug-in valve on both sides of the temporary storage channel 300, so that the temporary storage channel 300 can be a connected structure, which can reduce the time to open or close the plug-in valve and reduce wafer loading and unloading. The time has a positive effect on increasing the production capacity of the semiconductor processing equipment.
  • the semiconductor processing equipment can process multiple wafers at the same time, it is necessary to carry out the loading and unloading operations of wafers faster, or realize the loading and unloading of multiple wafers at the same time.
  • the loading and unloading of wafers It may be required at the temporary storage station 110 at the same time.
  • the number of temporary storage stations 110 may be multiple, and multiple temporary storage stations 110 can undoubtedly speed up the loading and unloading operations of wafers, and realize the loading and unloading of multiple wafers at the same time. Improve the loading and unloading speed of the semiconductor processing equipment.
  • some of the temporary storage stations 110 can be used for loading, and the rest can be used for unloading, to prevent interference or failure when loading and unloading wafers at the temporary storage station 110 at the same time. Problems such as the temporary storage table 110 for placing wafers, so that the semiconductor processing equipment can be loaded and unloaded in a stable and orderly manner.
  • the device body 200 may further include a transfer mechanism 230, which is disposed on the transfer platform 210, and the transfer mechanism 230 is used to transfer wafers.
  • the transfer mechanism 230 may be a robot arm.
  • the robot may have at least two wafer grasping devices, and the at least two wafer grasping devices can simultaneously transfer at least two wafers. , Undoubtedly can achieve the above effects.
  • the temporary storage channel 300 may include multiple wafer placement tables 310, which are used to temporarily store wafers.
  • the multiple wafer placement tables 310 can undoubtedly speed up the loading and unloading operations of wafers, and realize multiple wafer loading and unloading operations at the same time. The loading and unloading of wafers improves the loading and unloading speed of the semiconductor processing equipment.
  • some of the temporary storage stations of the multiple wafer placement stations 310 can be used for loading, and the rest can be used for unloading, to prevent interference or interference during the simultaneous loading and unloading of wafers at the wafer placement table 310. There is no problem such as the wafer placement table 310 where wafers can be placed, so that the semiconductor processing equipment can be loaded and unloaded in a stable and orderly manner.
  • increasing the loading and unloading speed of the semiconductor processing equipment has a positive effect on increasing the production capacity of the semiconductor processing equipment. Therefore, increasing the loading and unloading speed of the semiconductor processing equipment can also increase the production capacity of the semiconductor processing equipment.
  • the transmission platform 210 may be a polygonal transmission platform, and the transmission mechanism 230 is arranged on the polygonal transmission platform.
  • At least two reaction chambers 220 are arranged in the circumferential direction of the polygonal transmission platform, so that the polygonal transmission platform can be arranged regularly.
  • the reaction chamber 220 is arranged so that the reaction chamber 220 is arranged around the transfer platform 210 more regularly, which is convenient for designers to design.
  • the shape of the transmission platform 210 may be quadrangular, pentagonal or hexagonal. According to the optimization calculation and the limitation of on-site layout space, the transmission platform 210 of this shape can compact the layout of the semiconductor processing equipment, make the structure of the semiconductor processing equipment compact, and reduce the volume of the semiconductor processing equipment to facilitate the layout of the installation site. , Improve the utilization efficiency of the site layout space. Further, the shape of the transmission platform 210 may be a regular quadrilateral, a regular pentagon or a regular hexagon, so that the main body 200 of the device is more symmetrical and the structure of the semiconductor processing device is compact.
  • At least two reaction chambers 220 may be provided on at least one side of the transfer platform 210, so that the reaction chambers 220 can be arranged more regularly. Lay out.
  • the plurality of device bodies 200 may include a first device body and a second device body, wherein the first device body is connected to the vacuum interlocking chamber 100, and the shape of the transmission platform 210 of the first device body may be It is a regular quadrilateral, and the shape of the transmission platform 210 of the second device body may be a regular pentagon.
  • This layout mode can further compact the layout of the semiconductor processing equipment, make the structure of the semiconductor processing equipment more compact, further reduce the volume of the semiconductor processing equipment, to facilitate the layout of the installation site, and further improve the utilization efficiency of the on-site layout space.
  • the vacuum interlocking chamber 100 and the temporary storage channel 300 are respectively connected to the transmission platform 210.
  • the positions corresponding to the two opposite sides are connected to the transmission platform 210.
  • the vacuum interlocking chamber 100 and the temporary storage channel 300 can be respectively located on opposite sides of the first device body, so as to realize the symmetrical distribution of the reaction chamber 220, thereby easily realizing the wafer transfer path to the symmetrical reaction chamber same.
  • the wafer can be processed in the reaction chamber 220.
  • the reaction chamber 220 can be an ALD process chamber or a CVD process chamber. Since the ALD process has low temperature deposition, high film purity, and relatively high Advantages such as good coverage rate, CVD process has the advantages of simple process, environmental improvement, no pollution, less consumables, uniform and dense film.
  • the embodiment of the present application does not limit the type of process for processing the wafer.

Abstract

一种半导体加工设备，用于对晶圆进行加工，半导体加工设备包括：真空互锁腔室(100)；多个设备主体(200)，设备主体(200)包括传输平台(210)，在传输平台(210)的周向上排布有至少两个反应腔室(220)；暂存通道(300)，任意相邻的两个设备主体(200)通过暂存通道(300)相连通，暂存通道(300)用于暂存晶圆；多个设备主体(200)中的一者与真空互锁腔室(100)相连，传输平台(210)可在真空互锁腔室(100)与反应腔室(220)之间、暂存通道(300)与真空互锁腔室(100)之间以及暂存通道(300)与反应腔室(220)之间传送晶圆。上述方案能够解决半导体加工设备产能较低的问题。

Description

一种半导体加工设备 技术领域
本申请涉及半导体制造技术领域，尤其涉及一种半导体加工设备。
背景技术
原子层沉积(Atomic Layer Deposition，以下简称ALD)工艺和化学气相沉积(Chemical Vapor Deposition，以下简称CVD)工艺广泛地应用于半导体加工领域。但是，应用于ALD工艺和CVD工艺的半导体加工设备在晶圆上加工结构较难的孔洞、沟槽时，或者进行同种工艺且工艺时间较长，例如需要沉积较厚的薄膜(厚度大于
Figure PCTCN2021084860-appb-000001
)时，耗费的工艺时间较长，且产能较低。
发明内容
本申请公开一种半导体加工设备，能够解决半导体加工设备产能较低的问题。
为了解决上述问题，本申请采用下述技术方案：
本申请实施例公开一种半导体加工设备，用于对晶圆进行加工，所述半导体加工设备包括：
真空互锁腔室；
多个设备主体，所述设备主体包括传输平台，在所述传输平台的周向上排布有至少两个反应腔室；
暂存通道，任意相邻的两个所述设备主体通过所述暂存通道相连通，所述暂存通道用于暂存所述晶圆；其中：
多个所述设备主体中的一者与所述真空互锁腔室相连，所述传输平台可 在所述真空互锁腔室与所述反应腔室之间、所述暂存通道与所述真空互锁腔室之间以及所述暂存通道与所述反应腔室之间传送所述晶圆。
本申请采用的技术方案能够达到以下有益效果：
本申请实施例公开的半导体加工设备中，通过调整半导体加工设备的布局方式，以使多个设备主体叠加组合，即，利用暂存通道实现相邻两个的设备主体之间的连通，且每个设备主体具有至少两个反应腔室，此种布局的半导体加工设备，这与现有的只能在单个传输平台周围设置工艺模块相比，能够有效地增加反应腔室的数量，从而可以提高该半导体加工设备的产能，提高该半导体加工设备的产品竞争力。
附图说明
为了更清楚地说明本申请实施例或背景技术中的技术方案，下面将对实施例或背景技术中所需要使用的附图作简单的介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例公开的半导体加工设备的示意图；
图2为本申请另一实施例公开的半导体加工设备的示意图。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请具体实施例及相应的附图对本申请技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
以下结合附图，详细说明本申请各个实施例公开的技术方案。
请参考图1至图2，本申请实施例公开一种半导体加工设备，该半导体 加工设备用于对晶圆进行加工，所公开的半导体加工设备包括真空互锁腔室100、多个设备主体200和暂存通道300。
其中，真空互锁腔室(Load-Lock Chamber)100可实现在真空状态与大气状态之间的转换，在该真空互锁腔室100可转换为真空状态时，可实现在真空状态的半导体加工设备内部传入或传出晶圆，即，真空互锁腔室100可用作过渡腔室，实现晶圆的暂存与传送，从而方便半导体加工设备进行上下料操作。
暂存通道300同样可用于暂存晶圆，任意相邻的两个设备主体200之间均设置有该暂存通道300，且暂存通道300和与之相邻的两个设备主体200相连通，以使暂存通道300的真空度与设备主体200内部的真空度一致。暂存在暂存通道结构300中的该晶圆可以是工艺加工前的晶圆，也可以为工艺加工后的晶圆，也就是说，真空互锁腔室100和暂存通道300是半导体加工设备上下料的过渡模块，方便半导体加工设备进行上下料操作。
设备主体200包括传输平台210，在传输平台210的周向上排布有至少两个反应腔室220，具体地，传输平台210能够传送晶圆，完成半导体加工设备的上下料，具体地，传输平台210实现被加工工件传送的方式有多种，例如，传输平台210中设置有诸如机械手的传送装置，例如，图1示出的传输平台210中均有机械手230，该机械手230可以采用抓取的方式实现被加工工件的传送。又如，传输平台210也可以采用吸附(例如真空吸附、磁性吸附等)的方式实现被加工工件的传送。在具体的加工过程中，晶圆能够在反应腔室220内完成加工。
多个设备主体200可以包括第一设备主体和第二设备主体，第一设备主体包括第一传输平台，该第一传输平台与真空互锁腔室100相连，且在第一传输平台的周向上排布有至少两个第一反应腔室；第二设备主体包括第二传输平台，该第二传输平台通过暂存通道300与第一传输平台相连通，且在第 二传输平台的周向上排布有至少两个第二反应腔室。其中，与真空互锁腔室100相连的第一传输平台在真空互锁腔室100与反应腔室220之间、暂存通道300与真空互锁腔室100之间以及暂存通道300与反应腔室220之间传送晶圆；与真空互锁腔室100不相连的第二传输平台在暂存通道300与反应腔室220之间传送晶圆，从而实现该半导体加工设备的上下料循环。
第一反应腔室和第二反应腔室是加工晶圆的核心部件，晶圆在第一反应腔室和第二反应腔室中均能够完成加工，需要说明的是，第一反应腔室和第二反应腔室的结构及工艺原理均为已知技术，为了文本简洁，在此不再赘述。
通常情况下，两个或四个第一反应腔室组成一个第一工艺模块，也就是说，一个第一工艺模块一般包括偶数个第一反应腔室。当然，两个或四个第二反应腔室组成一个第二工艺模块，也就是说，一个第二工艺模块一般包括偶数个第二反应腔室。
在本申请实施例中，第一反应腔室和第二反应腔室可以为相同的晶圆加工装置，均为上文所述的反应腔室220，也就是说，第一反应腔室和第二反应腔室的结构及工艺原理均相同，以能够对被加工工件进行相同的工艺。结合上文，第一工艺模块和第二工艺模块可以为同一工艺模块，在半导体加工设备的设计的过程中，无需设计多个不同的工艺模块，仅需将该工艺模块重复组合即可，以使半导体加工设备实现模块化设计，从而方便设计人员的设计工作，简化设计工作量，提高半导体加工设备的设计效率。当然，第一反应腔室和第二反应腔室可以为不相同的晶圆加工装置，本申请实施例中对此不做限制。需要说明的是，第一传输平台和第二传输平台可以均为上文所述的传输平台210。
以此类推，可以得到第一设备主体和第二设备主体也可以为相同的设备主体，均为上文所述的设备主体200，在半导体加工设备的设计的过程中，无需设计多个不同的设备主体，仅需将该设备主体重复组合并通过暂存通道 实现各设备主体之间的连通即可，进一步提高半导体加工设备的模块化设计程度，进一步方便设计人员的设计工作，简化设计工作量，提高半导体加工设备的设计效率。当然，可能由于实际工况及场地等多方面的限制，第一设备主体和第二设备主体也可以设计为不相同的设备主体，以使第一设备主体和第二设备主体满足实际需求，本申请实施例中对此不做限制。
具体地，多个设备主体200中的一者与真空互锁腔室100相连，也就是说，第一设备主体与真空互锁腔室100相连，该半导体加工设备外部的晶圆通过真空互锁腔室100进入至设备主体200中进行加工，或者，设备主体200中加工完成的晶圆通过真空互锁腔室100传出至该半导体加工设备的外部，实现该半导体加工设备的上下料循环。
任意相邻的两个设备主体200通过暂存通道300相连通，传输平台210可在真空互锁腔室100与反应腔室220之间、暂存通道300与真空互锁腔室100之间以及暂存通道300与反应腔室220之间传送晶圆，以使晶圆能够被传送至反应腔室220中完成加工，或者，将加工完成的晶圆传送出反应腔室220。也就是说，暂存通道300设置于第一设备主体与第二设备主体之间，第一传输平台用于在真空互锁腔室100与第一反应腔室之间以及暂存通道300与真空互锁腔室100之间传送晶圆；第二传输平台用于在暂存通道300与第二反应腔室之间传送晶圆。
在该半导体加工设备加工晶圆的具体过程中，第一传输平台将位于真空互锁腔室100上未加工的晶圆传送至第一反应腔室，以使第一反应腔室完成晶圆的工艺加工，同时第一传输平台也可以将第一反应腔室中加工后的晶圆传送至真空互锁腔室100，完成一个晶圆的加工流程。
或者，第一传输平台将位于真空互锁腔室100上未加工的晶圆传送至暂存通道300，然后通过第二传输平台将暂存通道300上未加工的晶圆传送至第二反应腔室，以使第二反应腔室完成晶圆的工艺加工，然后第二传输平台 再将第二反应腔室中加工后的晶圆传送至暂存通道300，第一传输平台再将暂存通道300上加工后的晶圆传送至真空互锁腔室100，完成一个晶圆的加工流程。
本申请实施例中，第一设备主体的数量可以为多个，或，第二设备主体的数量也可以为多个，当然，第一设备主体和第二设备主体的数量可以同时为多个，本申请实施例中对此不做限制。多个第一设备主体叠加组合，或者，多个第二设备主体叠加组合，当然，多个第一设备主体和多个第二设备主体混合叠加，以使该半导体加工设备具有较多的第一反应腔室或第二反应腔室，从而使得该半导体加工设备能够同时加工较多个晶圆，进而使得该半导体加工设备的产能较高。
本申请实施例公开的半导体加工设备中，通过调整半导体加工设备的布局方式，以使多个设备主体200叠加组合，即，利用暂存通道实现相邻两个的设备主体之间的连通，且每个设备主体具有至少两个反应腔室，此种布局的半导体加工设备，这与现有的只能在单个传输平台周围设置工艺模块相比，能够有效地增加反应腔室的数量，从而可以提高该半导体加工设备的产能，提高该半导体加工设备的产品竞争力。
通常情况下，晶圆在使用半导体加工设备加工前，需要进行其他处理工序，而在其他处理工序完成后，晶圆无法或较难直接放置到真空互锁腔室100中。基于此，在一种可选的实施例中，半导体加工设备还可以包括半导体设备前端模块400和晶圆装载埠500，半导体设备前端模块400为目前市场上常规的EFEM(front end module of semiconductor equipment)设备，半导体设备前端模块400能够在半导体加工设备加工晶圆前对晶圆进行高效的传送和定位。晶圆装载埠500同样也为目前市场上常规的Load port设备，半导体设备前端模块400和晶圆装载埠500的具体结构与原理均为已知技术，为了文本简洁，在此不再赘述。
具体地，半导体设备前端模块400可以包括晶圆传送机械手，晶圆传送机械手用于在真空互锁腔室100与晶圆装载埠500之间传送晶圆。在其他处理工序对晶圆处理完成后，晶圆被放置在晶圆装载埠500中，然后晶圆传送机械手将晶圆装载埠500中的晶圆较为精准地传送至真空互锁腔室100中。半导体设备前端模块400和晶圆装载埠500的组合方案能够在实现晶圆自动上下料的同时，还能够保证晶圆上下料的准确性和晶圆上下料的速度，以使该半导体加工设备可靠稳定地运行。
晶圆的加工需要在真空环境下完成，为了保证该半导体加工设备能够有较好的真空环境，在一种可选的实施例中，真空互锁腔室100中可以设置有暂存台110，暂存台110用于暂存晶圆，真空互锁腔室100的一侧与设备主体200相连，且两者的连接处设置有第一插板阀，真空互锁腔室100的另一侧与外部设备(例如半导体设备前端模块400)相连，且两者的连接处设置有第二插板阀。需要说明的是，这里所说的外部设备是指相对于设备主体200的外部设备，也就是说，这里所说的外部设备可以为半导体加工设备的组成部件。
在晶圆具体的上料过程中，首先开启第一插板阀，以使晶圆传送机械手能够将晶圆装载埠500上的晶圆传送至暂存台110，然后关闭第一插板阀，进行真空互锁腔室100内抽真空操作，待真空互锁腔室100内为真空环境时，开启第二插板阀，然后传输平台210将位于真空互锁腔室100上未加工的晶圆传送至反应腔室220或暂存通道300，实现晶圆的上料操作。在晶圆具体的下料过程中，首先进行真空互锁腔室100内抽真空操作，待真空互锁腔室100内为真空环境时，开启第二插板阀，然后传输平台210将位于反应腔室220或暂存通道300上已加工的晶圆传送至暂存台110，然后关闭第二插板阀，开启第一插板阀，以使晶圆传送机械手能够将暂存台110上的晶圆传送至晶圆装载埠500，实现晶圆的下料操作。
在此上下料操作中，第一插板阀和第二插板阀能够隔断设备主体200与外部设备，防止设备主体200中的真空环境受到影响，从而保证该半导体加工设备能够有较好的真空环境用于加工晶圆，进而提高该半导体加工设备的可靠性。
由于任意相邻的两个设备主体200通过暂存通道300相连通，也就是说，暂存通道300的两侧分别与第一设备主体第二设备主体相连，同时由于第一设备主体第二设备主体中均为真空环境，所以，暂存通道300的两侧无需设置插板阀，以使暂存通道300可以为联通结构，从而能够减少开启或关闭插板阀的时间，减少晶圆上下料的时间，对提高该半导体加工设备的产能有着正向作用。
由于该半导体加工设备可以同时加工较多个晶圆，所以需要较快速地进行晶圆的上下料操作，或者同时实现多个晶圆的上下料，与此同时，晶圆的上料和下料可能在暂存台110处需要同时进行。基于此，在一种可选的实施例中，暂存台110的数量可以为多个，多个暂存台110无疑能够加快晶圆的上下料操作，同时实现多个晶圆的上下料，提高该半导体加工设备的上下料速度。同时，多个暂存台110中部分暂存台可以用于上料，其余部分可以用于下料，防止在暂存台110处同时进行晶圆的上料和下料时出现干涉或没有可放置晶圆的暂存台110等问题，从而使得该半导体加工设备稳定有序地上下料。
在一种可选的实施例中，设备主体200还可以包括传送机构230，传送机构230设置于传输平台210上，传送机构230用于传送晶圆，具体地，传送机构230可以为机械手。为了进一步提高该半导体加工设备的上下料速度，在一种可选的实施例中，机械手可以具有至少两个晶圆抓取装置，至少两个晶圆抓取装置能够同时传送至少两个晶圆，无疑能够实现上述效果。
进一步地，暂存通道300可以包括多个晶圆放置台310，晶圆放置台310 用于暂存晶圆，多个晶圆放置台310无疑能够加快晶圆的上下料操作，同时实现多个晶圆的上下料，提高该半导体加工设备的上下料速度。同时，多个晶圆放置台310中部分暂存台可以用于上料，其余部分可以用于下料，防止在晶圆放置台310处同时进行晶圆的上料和下料时出现干涉或没有可放置晶圆的晶圆放置台310等问题，从而使得该半导体加工设备稳定有序地上下料。
需要说明的是，提高该半导体加工设备的上下料速度对提高该半导体加工设备的产能有着正向作用，所以，提高该半导体加工设备的上下料速度也能够提高该半导体加工设备的产能。
可选地，传输平台210可以为多边形传输平台，传送机构230设置于多边形传输平台上，在多边形传输平台的周向上排布有至少两个反应腔室220，以使多边形传输平台能够规律地排布反应腔室220，以使反应腔室220较为规律地布设在传输平台210的周围，方便设计人员设计。
具体地，传输平台210的形状可以为四边形、五边形或六边形。根据优化计算以及现场布局空间的限制，此种形状的传输平台210能够使半导体加工设备布局紧凑，使得该半导体加工设备的结构紧凑，减小该半导体加工设备的体积，以方便在安装现场布局设置，提高现场布局空间的利用效率。进一步地，传输平台210的形状可以为正四边形、正五边形或正六边形，以使设备主体200较为对称，且使半导体加工设备的结构紧凑。
为了进一步提高反应腔室220的规律性排布，在一种可选的实施例中，传输平台210的至少一边可以设置有至少两个反应腔室220，以使反应腔室220更有规律地布设。
在本申请实施例中，多个设备主体200可以包括第一设备主体和第二设备主体，其中第一设备主体与真空互锁腔室100相连，且第一设备主体的传输平台210的形状可以为正四边形，第二设备主体的传输平台210的形状可以为正五边形。此种布局方式能够进一步使半导体加工设备布局紧凑，使得 该半导体加工设备的结构更加紧凑，进一步减小该半导体加工设备的体积，以方便在安装现场布局设置，进一步提高现场布局空间的利用效率。
进一步的，对于上述第一设备主体，当其传输平台210的形状为诸如四边形或六变形等偶数边的多边形时，真空互锁腔室100和暂存通道300分别在与该传输平台210的彼此相对的两个边对应的位置处与传输平台210相连。这样，可以使真空互锁腔室100和暂存通道300分别位于第一设备主体的对侧，以便于实现反应腔室220呈对称分布，从而容易实现晶圆向对称的反应腔室传送的路径相同。
如上文所述，晶圆在反应腔室220中能够完成加工工艺，具体地，反应腔室220可以为ALD工艺腔室或CVD工艺腔室，由于ALD工艺具有低温沉积、薄膜纯度较高以及较佳覆盖率等优势，CVD工艺具有工艺过程简单，对环境改善，无污染，耗材少，成膜均匀致密等优势。本申请实施例中并不限定加工晶圆的工艺类型。
本申请上文实施例中重点描述的是各个实施例之间的不同，各个实施例之间不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
以上所述仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (12)

  1. 一种半导体加工设备，用于对晶圆进行加工，其特征在于，所述半导体加工设备包括：
    真空互锁腔室；
    多个设备主体，所述设备主体包括传输平台，在所述传输平台的周向上排布有至少两个反应腔室；
    暂存通道，任意相邻的两个所述设备主体通过所述暂存通道相连通，所述暂存通道用于暂存所述晶圆；其中：
    多个所述设备主体中的一者与所述真空互锁腔室相连，所述传输平台可在所述真空互锁腔室与所述反应腔室之间、所述暂存通道与所述真空互锁腔室之间以及所述暂存通道与所述反应腔室之间传送所述晶圆。
  2. 根据权利要求1所述的半导体加工设备，其特征在于，所述真空互锁腔室中设置有暂存台，所述暂存台用于暂存所述晶圆；
    所述真空互锁腔室的一侧与所述设备主体相连，且两者的连接处设置有第一插板阀，所述真空互锁腔室的另一侧与外部设备相连，且两者的连接处设置有第二插板阀。
  3. 根据权利要求2所述的半导体加工设备，其特征在于，所述暂存台的数量为多个。
  4. 根据权利要求1所述的半导体加工设备，其特征在于，所述传输平台的形状为四边形、五边形或六边形。
  5. 根据权利要求4所述的半导体加工设备，其特征在于，所述传输平台的形状为正四边形、正五边形或正六边形。
  6. 根据权利要求5所述的半导体加工设备，其特征在于，多个所述设备主体包括第一设备主体和第二设备主体，其中所述第一设备主体与所述真空互锁腔室相连，且所述第一设备主体的所述传输平台的形状为正四边形，所述第二设备主体的所述传输平台的形状为正五边形。
  7. 根据权利要求4所述的半导体加工设备，其特征在于，所述传输平台的至少一边设置有至少两个所述反应腔室。
  8. 根据权利要求4或5或7所述的半导体加工设备，其特征在于，所述传输平台的形状为四边形或六边形；
    所述真空互锁腔室和所述暂存通道分别在与所述传输平台的彼此相对的两个边对应的位置处与所述传输平台相连。
  9. 根据权利要求1所述的半导体加工设备，其特征在于，所述设备主体还包括传送机构，所述传送机构设置于所述传输平台上。
  10. 根据权利要求9所述的半导体加工设备，其特征在于，所述传送机构为机械手，且所述机械手具有至少两个晶圆抓取装置。
  11. 根据权利要求1所述的半导体加工设备，其特征在于，所述暂存通道包括多个晶圆放置台，所述晶圆放置台用于暂存所述晶圆。
  12. 根据权利要求1所述的半导体加工设备，其特征在于，所述反应腔室为ALD工艺腔室或CVD工艺腔室。
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