WO2021196018A1 - Condensateur et son procédé de fabrication - Google Patents

Condensateur et son procédé de fabrication Download PDF

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Publication number
WO2021196018A1
WO2021196018A1 PCT/CN2020/082573 CN2020082573W WO2021196018A1 WO 2021196018 A1 WO2021196018 A1 WO 2021196018A1 CN 2020082573 W CN2020082573 W CN 2020082573W WO 2021196018 A1 WO2021196018 A1 WO 2021196018A1
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Prior art keywords
layer
wing
conductive
external electrode
structures
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PCT/CN2020/082573
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English (en)
Chinese (zh)
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陆斌
沈健
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深圳市汇顶科技股份有限公司
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Priority to PCT/CN2020/082573 priority Critical patent/WO2021196018A1/fr
Publication of WO2021196018A1 publication Critical patent/WO2021196018A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind

Definitions

  • This application relates to the field of capacitors, and more specifically, to a capacitor and a manufacturing method thereof.
  • Capacitors can play the role of bypassing, filtering, decoupling, etc. in the circuit, and are an indispensable part of ensuring the normal operation of the circuit.
  • MLCC Multi-layer Ceramic Capacitors
  • the present application provides a capacitor and a manufacturing method thereof, which can manufacture a capacitor with a small volume and a high capacitance value density.
  • a capacitor including:
  • a multi-wing structure the multi-wing structure includes a plurality of groups of wing-shaped structures and a plurality of supporting structures, wherein each wing-shaped structure in each group of wing-shaped structures is arranged in parallel, and the supporting structure is a hollow structure extending along a first direction,
  • the wing-shaped structure is a convex structure formed by extending the outer side wall of the supporting structure in a direction perpendicular to the first direction;
  • a laminated structure the laminated structure encapsulating the multi-wing structure, the laminated structure including at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and the multilayer conductive layer form a conductive layer A structure in which layers and dielectric layers alternate with each other;
  • At least one first external electrode the first external electrode electrically connected to a part or all of the odd-numbered conductive layers in the multilayer conductive layer;
  • At least one second external electrode, and the second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.
  • the supporting structure is hollow columnar or grooved.
  • part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure.
  • a part of the conductive layer in the multilayer conductive layer is conformal to the multi-wing structure, and the other part of the conductive layer is complementary in shape to the multi-wing structure.
  • a single wing-like structure in the plurality of groups of wing-like structures includes a plurality of wings extending in a direction perpendicular to the first direction.
  • the support structure of the plurality of support structures is provided with at least one axis extending along the first direction in its hollow area.
  • the multi-wing structure further includes a ring structure, and the ring structure is located outside the plurality of support structures and the groups of wing-like structures.
  • the capacitor further includes:
  • the isolation ring is located above the ring structure, and the isolation ring extends into the laminated structure along the first direction, and the first external electrode and the second external electrode are not connected to the laminated structure.
  • the layer structure is electrically connected to the area outside the isolation ring.
  • the capacitor further includes:
  • At least one first conductive via structure and at least one second conductive via structure wherein
  • the first conductive via structure is located in the isolation ring, the second conductive via structure is located outside the isolation ring near the center of the capacitor, and the first external electrode passes through the at least one first A conductive via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to the multilayer conductive layer through the at least one second conductive via structure Part or all of the even-numbered conductive layers in the layers.
  • the ring structure is formed by alternately stacking multiple layers of the first material and multiple layers of the second material.
  • the multi-wing structure is formed of the first material.
  • the multi-wing structure is made of conductive material, and the second external electrode is also electrically connected to the multi-wing structure.
  • the multi-wing structure includes a main body material and a conductive layer or a conductive area on the surface of the main body material, and the second external electrode is electrically connected to the multi-wing structure through the conductive layer or the conductive area. Electrical connection.
  • the multi-wing structure is formed of a material with a resistivity less than a threshold value, or a heavily doped conductive layer or a heavily doped conductive region is formed on the surface of the multi-wing structure.
  • the capacitor further includes:
  • a filling structure that covers the laminated structure and fills the voids formed by the laminated structure.
  • the capacitor further includes: a substrate disposed under the multi-wing structure.
  • the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures has a discontinuous area between different support structures.
  • the substrate forms a substrate trench extending along the first direction at the discontinuous region, and the stacked structure is further disposed in the substrate trench.
  • the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures is continuous between different support structures.
  • the support structure extends from the upper surface of the substrate into the substrate along the first direction.
  • the capacitor further includes: an electrode layer disposed above the laminated structure, the electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other, so The first conductive area forms the first external electrode, and the second conductive area forms the second external electrode.
  • the first external electrode and/or the second external electrode are electrically connected to the conductive layer in the multilayer conductive layer through an interconnection structure.
  • the interconnection structure includes at least one insulating layer, at least one first conductive via structure, and at least one second conductive via structure, wherein the first conductive via structure and the second conductive via structure Two conductive via structures penetrate the at least one insulating layer, and the first external electrode is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure, so The second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one second conductive via structure.
  • the conductive layer in the multilayer conductive layer includes at least one of the following:
  • the dielectric layer in the at least one dielectric layer includes at least one of the following:
  • Silicon oxide layer silicon nitride layer, silicon oxynitride layer, metal oxide layer, metal nitride layer and metal oxynitride layer.
  • a method for manufacturing a capacitor including:
  • a multi-wing structure is prepared above the substrate, the multi-wing structure includes a plurality of groups of wing-like structures and a plurality of supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, and the supporting structure extends along the first direction.
  • a hollow structure, the wing-like structure is a convex structure formed by extending the outer side wall of the supporting structure in a direction perpendicular to the first direction;
  • the laminated structure on the surface of the multi-wing structure, the laminated structure covering the multi-wing structure, the laminated structure including at least one dielectric layer and a plurality of conductive layers, the at least one dielectric layer and
  • the multilayer conductive layer forms a structure in which a conductive layer and a dielectric layer alternate with each other;
  • At least one first external electrode and at least one second external electrode are prepared, wherein the first external electrode is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected To part or all of the even-numbered conductive layers in the multilayer conductive layer.
  • the preparing a multi-wing structure above the substrate includes:
  • a multi-layer structure is prepared over the substrate, the multi-layer structure includes a multi-layer first material layer and a multi-layer second material layer, the multi-layer first material layer and the multi-layer second material layer form the first material A structure in which layers and second material layers alternate with each other, the first material is different from the second material, and the first material layer is in direct contact with the substrate;
  • the supporting structure is hollow columnar or grooved.
  • part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure.
  • a part of the conductive layer in the multilayer conductive layer is conformal to the multi-wing structure, and the other part of the conductive layer is complementary in shape to the multi-wing structure.
  • a single wing-like structure in the plurality of groups of wing-like structures includes a plurality of wings extending in a direction perpendicular to the first direction.
  • the support structure of the plurality of support structures is provided with at least one axis extending along the first direction in its hollow area.
  • the multi-wing structure further includes a ring structure, and the ring structure is located outside the plurality of support structures and the groups of wing-like structures.
  • the method further includes:
  • the isolation ring is located above the ring structure, and the isolation ring extends into the laminated structure along the first direction, the first external electrode and the second external electrode It is not electrically connected to the region of the laminated structure outside the isolation ring.
  • the method further includes:
  • At least one first conductive via structure and at least one second conductive via structure are prepared, wherein,
  • the first conductive via structure is located in the isolation ring, the second conductive via structure is located outside the isolation ring near the center of the capacitor, and the first external electrode passes through the at least one first A conductive via structure is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode is electrically connected to the multilayer conductive layer through the at least one second conductive via structure Part or all of the even-numbered conductive layers in the layers.
  • the ring structure is formed by alternately stacking multiple layers of the first material and multiple layers of the second material.
  • the multi-wing structure is formed of the first material.
  • the multi-wing structure is made of conductive material, and the second external electrode is also electrically connected to the multi-wing structure.
  • the multi-wing structure includes a main body material and a conductive layer or area on the surface of the main body material, and the second external electrode is electrically connected to the multi-wing structure through the conductive layer or the conductive area. Electrical connection.
  • the multi-wing structure is formed of a material with a resistivity less than a threshold value, or a heavily doped conductive layer or a heavily doped conductive region is formed on the surface of the multi-wing structure.
  • the method further includes:
  • a filling structure is prepared, and the filling structure covers the laminated structure and fills the voids formed by the laminated structure.
  • the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures has a discontinuous area between different support structures.
  • the substrate forms a substrate trench extending along the first direction at the discontinuous region, and the stacked structure is further disposed in the substrate trench.
  • the wing-shaped structure in contact with the substrate in the plurality of groups of wing-shaped structures is continuous between different support structures.
  • the support structure extends from the upper surface of the substrate into the substrate along the first direction.
  • the preparing at least one first external electrode and at least one second external electrode includes:
  • An electrode layer is prepared above the laminated structure, the electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other, the first conductive region forms the first external electrode, and The second conductive area forms the second external electrode.
  • the method further includes:
  • An interconnection structure is prepared, wherein the first external electrode and/or the second external electrode are electrically connected to the conductive layer in the multilayer conductive layer through the interconnection structure.
  • the interconnection structure includes at least one insulating layer, at least one first conductive via structure, and at least one second conductive via structure, wherein the first conductive via structure and the second conductive via structure Two conductive via structures penetrate the at least one insulating layer, and the first external electrode is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure, so The second external electrode is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one second conductive via structure.
  • the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and the result can be obtained with a smaller device size (capacitor chip size).
  • a larger capacitance value can increase the capacitance value density of a capacitor formed with a laminated structure.
  • the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased.
  • the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, which can further increase the capacitance density of the capacitor.
  • Fig. 1 is a schematic structural diagram of a capacitor according to an embodiment of the present application.
  • FIGS. 2 to 8 are schematic structural diagrams of the multi-wing structure included in the capacitor according to the embodiment of the present application.
  • Fig. 9 is a schematic flowchart of a method for manufacturing a capacitor according to an embodiment of the present application.
  • 10a to 10k are schematic diagrams of a manufacturing method of a capacitor according to an embodiment of the present application.
  • capacitors in the embodiments of the present application can perform functions such as bypassing, filtering, and decoupling in the circuit.
  • the capacitor described in the embodiment of the present application may be a 3D silicon capacitor, which is a new type of capacitor based on semiconductor wafer processing technology. Compared with traditional MLCC (multilayer ceramic capacitors), 3D silicon capacitors have the advantages of small size, high precision, high stability, and long life.
  • the basic processing flow needs to process high-aspect-ratio deep holes (Via), trenches (Trench), pillars (Pillar), wall (Wall) and other 3D structures on the wafer or substrate first, and then in the 3D structure
  • An insulating film and a low-resistivity conductive material are deposited on the surface to make the lower electrode, the dielectric layer and the upper electrode of the capacitor in sequence.
  • This application proposes a new type of capacitor structure and manufacturing method, which can improve the capacitance density of the capacitor.
  • the capacitor in FIG. 1 is only an example, and the multi-wing structure included in the capacitor is not limited to those shown in FIGS. 1 to 8 and can be flexibly adjusted according to actual needs.
  • the number of wing-like structures and the number of supporting structures included in the multi-wing structure are only examples, and are not limited to those shown in FIGS. 1 to 8, and can be flexibly set according to actual needs.
  • FIG. 1 is a possible structural diagram of a capacitor 100 according to an embodiment of the present application.
  • the capacitor 100 includes a multi-wing structure 110, a laminated structure 120, at least one first external electrode 130, and at least one second external electrode 140.
  • the multi-wing structure 110 includes a plurality of groups of wing-shaped structures 111 and a plurality of supporting structures 112, wherein each wing-shaped structure 111 in each group of wing-shaped structures 111 is arranged in parallel, and the
  • the supporting structure 112 is a hollow structure extending along a first direction (such as the vertical direction in the figure), and the wing-like structure 111 is a convex formed by extending the outer side wall of the supporting structure 112 in a second direction (such as the horizontal direction in the figure).
  • the second direction is perpendicular to the first direction, where the wing-like structure 111 and the supporting structure 112 are connected to form a whole;
  • the laminated structure 120 covers the multi-wing structure 110, and the laminated structure 120 includes at least one layer A dielectric layer and a multilayer conductive layer, the at least one dielectric layer and the multilayer conductive layer form a structure in which a conductive layer and a dielectric layer alternate with each other;
  • the first external electrode 130 is electrically connected to part or all of the multilayer conductive layer Odd-numbered conductive layers;
  • the second external electrode 140 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer.
  • the multiple wing-like structures 111 arranged in parallel on the outer side wall of one supporting structure 112 belong to the same group.
  • the wing-like structures 111 in each group are correspondingly arranged, and the correspondingly arranged wing-like structures 111 are located on the same horizontal plane.
  • two adjacent conductive layers in the multilayer conductive layer are electrically isolated by a dielectric layer.
  • the specific number of layers of the conductive layer and the dielectric layer can be flexibly configured according to actual needs, and only needs to satisfy the electrical isolation between two adjacent conductive layers in the multilayer conductive layer.
  • the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and it can be used in a smaller device size (capacitor chip size). In this case, a larger capacitance value is obtained, so that the capacitance value density of a capacitor formed with a laminated structure can be improved.
  • the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased.
  • the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, thereby increasing the capacitance density of the capacitor.
  • the surface area of the multi-wing structure can be understood as the area of the bottom wall and inner side wall of the support structure, the upper and lower surfaces and side surfaces of the wing-like structure, etc., which can be used to attach the laminated structure.
  • the multi-wing structure 110 is a skeleton, which may not be used as a part of the capacitor itself, that is, the multi-wing structure 110 may not be limited to the material selection of the capacitor electrode material, that is, the material selection of the multi-wing structure 110 It can be more flexible, so that the preparation process of the multi-wing structure 110 can be simplified.
  • the external electrode in the embodiment of the present application may also be referred to as a pad or an external pad.
  • the support structure 112 is hollow columnar or groove-shaped.
  • the hollow columnar support structure 112 may also be referred to as a "barrel-shaped" support structure 112 or a "cup-shaped” support structure 112, which has a bottom structure and an annular side wall.
  • the groove-shaped support structure 112 may have a bottom structure and two oppositely distributed sidewalls. That is, the bottom structure and sidewalls of the supporting structure 112 may form a hollow area. Since the laminated structure 120 covers the supporting structure, that is to say, the laminated structure 120 may be disposed in this hollow area.
  • the material of the first external electrode 130 and the second external electrode 140 may be metal, such as copper, aluminum, or the like.
  • the surfaces of the first external electrode 130 and the second external electrode 140 may be provided with low resistivity Ti, TiN, Ta, TaN layers as an adhesion layer and/or barrier layer to facilitate the first external electrode 130 And the second external electrode 140 to adhere to other structures of the capacitor, or to facilitate blocking between the first external electrode 130 and the second external electrode 140 and other structures of the capacitor; in addition, the first external electrode 140
  • the surface of the electrode 130 and the second external electrode 140 may also be provided with some metal layers, such as Ni, Pd (palladium), Au, Sn (tin), and Ag for subsequent wire bonding or welding processes.
  • the conductive layer in the multilayer conductive layer includes at least one of the following:
  • the material of the conductive layer in the multilayer conductive layer may be heavily doped polysilicon, metal silicide (silicide), carbon, conductive polymer, Al, Cu, Ni, etc.
  • Metal tantalum nitride (TaN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), tantalum silicon nitride (TaSiN), tantalum carbon nitride (TaCN) and other low-resistivity compounds, or the multilayer conductive
  • the conductive layer in the layer is a combination, laminate, and composite structure of the above-mentioned materials.
  • a conductive layer in the multilayer conductive layer may be one layer or multiple stacked layers, and a certain conductive layer in the multilayer conductive layer may be a single layer formed of a single material, or it may be A composite layer formed by a variety of materials.
  • the materials and thicknesses of different conductive layers in the multilayer conductive layer may be the same or different.
  • the specific conductive material and layer thickness of the conductive layer in the multilayer conductive layer can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor.
  • the conductive layer in the multilayer conductive layer may also include some other conductive materials, which is not limited in the embodiment of the present application.
  • the dielectric layer in the at least one dielectric layer includes at least one of the following:
  • Silicon oxide layer silicon nitride layer, silicon oxynitride layer, metal oxide layer, metal nitride layer and metal oxynitride layer.
  • the material of the dielectric layer in the at least one dielectric layer may be silicon oxide, silicon nitride, silicon oxynitride, metal oxide, or metal nitrogen.
  • Compounds, metal oxynitrides For example, SiO 2 , SiN, SiON, or high-k materials, including Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2 , Y 2 O 3 , La 2 O 3 , HfSiO 4 , LaAlO 3 , SrTiO 3 , LaLuO 3 and so on.
  • One dielectric layer in the at least one dielectric layer may be one layer or a plurality of stacked layers, and one dielectric layer in the at least one dielectric layer may be one material or a combination or mixture of multiple materials.
  • the materials and thicknesses of different dielectric layers in the at least one dielectric layer may be the same or different.
  • the specific insulating material and layer thickness of each dielectric layer in the at least one dielectric layer can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor.
  • the dielectric layer in the at least one dielectric layer may also include some other insulating materials, which is not limited in the embodiment of the present application.
  • the order of the at least one dielectric layer may be as follows: on the multi-wing structure 110, the distance from the multi-wing structure 110 is ascending or descending.
  • the order of the multilayer conductive layers can also be: on the multi-wing structure 110, the distance from the multi-wing structure 110 is from small to large or from large to small.
  • the sequence of the at least one dielectric layer and the multi-layer conductive layer is illustrated by taking the order of the distance from the multi-wing structure 110 on the multi-wing junction 110 from small to large as an example.
  • the capacitor 100 further includes: a substrate 150 disposed under the multi-wing structure 110, the first direction may be a direction perpendicular to the substrate 150, As shown in Figure 1.
  • the thickness of the substrate 150 can also be flexibly set according to actual needs. For example, when the thickness of the substrate 150 is too thick to meet the requirements, the substrate 150 can be Perform thinning treatment. It is even possible to completely remove the substrate 150.
  • Fig. 1 is a cross section along the longitudinal direction of the substrate.
  • the substrate 150 may be a silicon wafer, including monocrystalline silicon, polycrystalline silicon, and amorphous silicon.
  • the substrate 150 may also be other semiconductor substrates, including silicon-on-insulator (SOI) wafers, silicon carbide (SiC), gallium nitride (GaN), and gallium arsenide (GaAs). ) And other compound semiconductor wafers of group III-V elements.
  • the substrate 150 may also be a metal plate, glass, ceramic, organic polymer, or other rigid substrate.
  • the surface of the substrate 150 may include a bonding layer, an epitaxial layer, an oxide layer, a doped layer, and the like.
  • the wing-shaped structure 111 between the different support structures 112 that is in contact with the substrate 150 is continuous, and the substrate 150 has a flat surface in the area between the different support structures 112.
  • other wing-like structures 111 between different support structures 112 may also be continuous.
  • the different support structures 112 are interrupted by an annular groove, all the wing-like structures 111 between the support structures 112 are continuous. of.
  • the wing-shaped structure 111 between the different supporting structures 112 that is in contact with the substrate 150 is discontinuous, and the substrate 150 is formed with substrate trenches in the region between the different supporting structures 112.
  • the support structure 112 may also extend into the substrate 150.
  • a single wing-like structure 111 in the plurality of groups of wing-like structures 111 may have multiple wings (also referred to as branches) extending in the second direction.
  • the support structure 112 of the plurality of support structures 112 may be provided with (have) at least one axis extending along the first direction in the hollow area thereof.
  • the capacitor 100 further includes an isolation ring 160, the isolation ring 160 is located above the ring structure 113, and the isolation ring 160 extends along the first direction into the laminated structure 120.
  • the first external electrode 130 and the second external electrode 140 are not electrically connected to the area of the laminated structure 120 outside the isolation ring 160, as shown in FIG. 1.
  • the capacitor 100 further includes: at least one first conductive via structure 30 and at least one second conductive via structure 40, wherein,
  • the first conductive via structure 30 is located in the isolation ring 160
  • the second conductive via structure 40 is located in the area inside the isolation ring 160
  • the first external electrode 130 is electrically connected through the at least one first conductive via structure 30.
  • the second external electrode 140 is electrically connected to part or all of the even-numbered layers in the multilayer conductive layer through the at least one second conductive via structure 40 Conductive layer, as shown in Figure 1.
  • the arrangement of the isolation ring 160 can make the area of the laminated structure 120 outside the isolation ring 113 not constitute the electrode plate of the capacitor 100, thereby avoiding the occurrence of air between the laminated structure 120 and the ring structure 113 at the edge of the capacitor 100. The problem of breakdown.
  • part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure 110.
  • a part of the conductive layer in the multilayer conductive layer is conformal to the multi-wing structure 110, and the other part of the conductive layer conforms to the multi-wing structure in appearance. 110 complementary.
  • the multi-wing structure 110 includes three groups of wing-like structures 111 and three supporting structures 112. Taking the supporting structure 112 as a hollow column as an example, the three groups of wing-like structures 111 are denoted as groups from left to right. 1. Groups 2 and 3, each group includes 4 wing-like structures 111, where the wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in group 2 surrounds the corresponding The outer side wall of the support structure 112 is provided, and the wing-shaped structure 111 in the group 3 is only provided on the outer side wall of the corresponding support structure 112 close to the left side.
  • the laminated structure 120 includes two conductive layers and one dielectric layer, such as the conductive layer 21 and the conductive layer 22 as shown in FIG. 1, and the dielectric layer 23.
  • the conductive layer 21 is in direct contact with the multi-wing structure 110, that is, the conductive layer 21 is disposed on the surface of the multi-wing structure 110 and covers the multi-wing structure 110, and the conductive layer 21 shares the same with the multi-wing structure 110.
  • the conductive layer 22 is arranged above the conductive layer 21, and the conductive layer 22 is complementary to the multi-wing structure 110 in shape; the dielectric layer 23 is arranged between the conductive layer 21 and the conductive layer 22 to connect the conductive layer 21 and the conductive layer 22 Electrically isolated, the dielectric layer 23 is also conformal to the multi-wing structure 110.
  • the conductive layer 21 in the laminated structure 120 is conformal to the multi-wing structure 110. It can be understood that the conductive layer 21 and the multi-wing structure 110 may have the same or substantially the same outline, so that the conductive layer 21 The area in contact with the multi-wing structure 110 can be covered, so that the conductive layer 21 can obtain a larger surface area based on the multi-wing structure 110, thereby increasing the capacitance density of the capacitor.
  • the dielectric layer 23 is also conformal to the multi-wing structure 110, and the dielectric layer 23 may also have the same or substantially the same contour as the multi-wing structure 110.
  • the conductive layer 22 is complementary to the multi-wing structure 110 in appearance. It can be understood that the combination of the conductive layer 22 and the multi-wing structure 110 can form a structure without internal voids or cavities, which improves the structural integrity and mechanical stability of the capacitor. .
  • the second external electrode 140 is also electrically connected to the multi-wing structure 110. That is, when the multi-wing structure 110 is conductive, the multi-wing structure 110 can also be used as an electrode plate of the capacitor 100.
  • the second external electrode 140 is also electrically connected to the multi-wing structure 110, the multi-wing structure 110 and the laminated structure 120 need to be electrically isolated, for example, the multi-wing structure 110 A dielectric layer is provided between the laminated structure 120 and the laminated structure 120.
  • the multi-wing structure 110 is conductive. It can be understood that the multi-wing structure 110 is formed of a material with a resistivity less than a threshold value, or the surface of the multi-wing structure 110 is formed with a highly doped conductive material with a resistivity less than the threshold value. Layer or conductive area.
  • the multi-wing structure 110 may be doped to form a p++-type or n++-type low-resistivity conductive layer or conductive region.
  • a low-resistivity conductive material is deposited on the surface of the multi-wing structure 110, such as using a PVD or ALD process to deposit TiN and/or TaN and/or Pt and other metals, or using a CVD process to deposit heavily doped polysilicon, metal tungsten , Carbon materials.
  • a material with a resistivity less than the threshold value can be regarded as a conductive material.
  • the multi-wing structure 110 is formed of a material with a resistivity less than a threshold, which can ensure that the multi-wing structure 110 is conductive, that is, it can be used as an electrode plate of the capacitor 100.
  • the capacitor 100 further includes: a filling structure 170 that covers the laminated structure 120 and fills the cavity or gap formed by the laminated structure 120, as shown in FIG. 1 Shown.
  • a filling structure 170 that covers the laminated structure 120 and fills the cavity or gap formed by the laminated structure 120, as shown in FIG. 1 Shown.
  • the filling structure 170 is complementary to the laminated structure 120 in shape.
  • the filling structure 170 can be structurally complementary to the laminated structure 120, and the combination of the two can form a structure with no internal voids or cavities, which improves the structural integrity and mechanical stability of the capacitor.
  • the material of the filling structure 170 may be a conductive material, such as metal tungsten, or some other materials, which is not limited in this application.
  • the filling structure 170 can also be used as an electrode plate of the capacitor 100.
  • the first external electrode 130 and/or the second external electrode 140 are electrically connected to the conductive layer in the multilayer conductive layer through the interconnection structure 180.
  • the interconnect structure 180 includes at least one first conductive via structure 30, at least one second conductive via structure 40, and at least one insulating layer 50, wherein the first conductive via structure 30 and the second conductive via structure 30
  • the via structure 40 penetrates the at least one insulating layer 50
  • the first external electrode 130 is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure 30, and the second
  • the external electrode 140 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one second conductive via structure 40.
  • the interconnect structure 180 is disposed above the filling structure 170.
  • the at least one insulating layer 50 may also be referred to as an intermetal dielectric layer (IMD) or an interlayer dielectric layer (ILD).
  • IMD intermetal dielectric layer
  • ILD interlayer dielectric layer
  • the at least one insulating layer 50 and the isolation ring 160 have the same material, In other words, the at least one insulating layer 50 and the isolation ring 160 may be formed in the same step.
  • the material of the at least one insulating layer 50 may be an organic polymer material, including polyimide, Parylene, benzocyclobutene (BCB), etc.; or some Inorganic materials, including spin-on glass (SOG), undoped silicon glass (Undoped Silicon Glass, USG), boro-silicate glass (BSG), phospho-silicate glass (phospho-silicate glass, PSG), boro-phospho-silicate glass (BPSG), Tetraethyl Orthosilicate (TEOS), silicon oxide, nitride, carbide, ceramic; it can also be a combination of the above materials Or laminated.
  • organic polymer material including polyimide, Parylene, benzocyclobutene (BCB), etc.
  • Inorganic materials including spin-on glass (SOG), undoped silicon glass (Undoped Silicon Glass, USG), boro-silicate glass (BSG), phospho-silicate glass (phospho-silicate glass, PSG), boro-phospho-s
  • the materials of the first conductive via structure 30 and the second conductive via structure 40 may be made of low-resistivity conductive materials, such as heavily doped polysilicon, tungsten, Ti, TiN, Ta, TaN, etc.
  • first conductive via structure 30 and the second conductive via structure 40 may be specifically determined according to the manufacturing process of the capacitor 100, which is not limited in the embodiment of the present application.
  • the at least one first external electrode 130 and the at least one second external electrode 140 are disposed above the multi-wing structure 110.
  • the capacitor 100 further includes: an electrode layer disposed above the multi-wing structure 110, and the electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other, the first conductive region The first external electrode 130 is formed, and the second conductive area forms the second external electrode 140, as shown in FIG. 1. That is, the at least one first external electrode 130 and the at least one second external electrode 140 can be formed by one etching, which reduces the etching steps.
  • the electrode layer is disposed above the interconnect structure 180, the first external electrode 130 is electrically connected to the conductive layer 21 through the first conductive via structure 30, and the second external electrode 140 is electrically connected to the conductive layer 21 through the first conductive via structure 30.
  • the two conductive via structures 40 are electrically connected to the conductive layer 22.
  • the multi-wing structure 110 is disposed above the substrate 150, and the multi-wing structure 110 includes three groups of wing-like structures 111 and three supporting structures 112 to support the structure
  • 112 is a hollow columnar shape.
  • Three groups of wing-like structures 111 are marked as group 1, group 2 and group 3 from left to right.
  • Each group includes 4 wing-like structures 111, of which, wing-like structures 111 in group 1 are only provided On the outer sidewall of the corresponding support structure 112 on the right side, the wing-like structure 111 in group 2 is arranged around the outer sidewall of the corresponding support structure 112, and the wing-like structure 111 in the group 3 is only arranged on the outer sidewall of the corresponding support structure 112 near the left.
  • the wing-shaped structures 111 that is, the lowermost wing-shaped structure
  • in contact with the substrate 150 in different groups are continuous (connected as a whole) between the different supporting structures 112.
  • the multi-wing structure 110 is disposed above the substrate 150. Similar to the embodiment shown in FIG. 2, the multi-wing structure 110 includes three groups of wing-like structures 111 And three supporting structures 112. Taking the supporting structure 112 as a hollow column as an example, the three groups of wing-like structures 111 are denoted as group 1, group 2 and group 3 from left to right, and each group includes 4 wing-like structures 111, Among them, the wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112, the wing-like structure 111 in group 2 is arranged around the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in group 3 is only arranged on the corresponding support The structure 112 is close to the outer side wall on the left side.
  • the wing-like structure 111 (that is, the lowermost wing-like structure) in contact with the substrate 150 in different groups has a discontinuous area between the different support structures 112, and the substrate 150 has a flat surface in this discontinuous area. That is, in the discontinuous area, the stacked structure 120 may directly contact the substrate 150.
  • the multi-wing structure 110 is disposed above the substrate 150. Similar to the embodiment shown in FIG. 2, the multi-wing structure 110 includes three groups of wing-like structures 111 And three supporting structures 112. Taking the supporting structure 112 as a hollow column as an example, the three groups of wing-like structures 111 are denoted as group 1, group 2 and group 3 from left to right, and each group includes 4 wing-like structures 111, Among them, the wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112, the wing-like structure 111 in group 2 is arranged around the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in group 3 is only arranged on the corresponding support The structure 112 is close to the outer side wall on the left side.
  • the supporting structure 112 of the three supporting structures 112 extends from the upper surface of the substrate 150 into the substrate 150 along the first direction. Thereby, the sidewall area of the supporting structure 112 can be increased, the surface area of the laminated structure 120 can be increased, and the capacitance density can be increased. At the same time, the mechanical stability of the multi-wing structure 110 can be improved.
  • the multi-wing structure 110 is disposed above the substrate 150, similar to the embodiment shown in FIG. 2, the multi-wing structure 110 includes three groups of wing-like structures 111 And three supporting structures 112.
  • the three groups of wing-like structures 111 are denoted as group 1, group 2 and group 3 from left to right, and each group includes 4 wing-like structures 111, Among them, the wing-like structure 111 in group 1 is only arranged on the outer side wall of the corresponding support structure 112, the wing-like structure 111 in group 2 is arranged around the outer side wall of the corresponding support structure 112, and the wing-like structure 111 in group 3 is only arranged on the corresponding support The structure 112 is close to the outer side wall on the left side.
  • the wing-like structures 111 in different groups that are in contact with the substrate 150 have discontinuous regions between different support structures 112, and the substrate 150 forms an edge at the discontinuous regions.
  • the substrate trench 151 extends in the first direction.
  • the laminated structure 120 can be disposed in the substrate trench 151, so that the surface area of the laminated structure 120 can be increased, the capacitance density can be increased, and the mechanical stability of the multi-wing structure 110 can be improved.
  • the above-mentioned solution of the multi-wing structure 110 included in the capacitor 100 in FIG. 4 and FIG. 5 may be combined.
  • the depth of the support structure 112 extending into the substrate 150 and the depth of the substrate trench 151 may be The same can be different.
  • the multi-wing structure 110 further includes a ring structure 113, and the ring structure 113 is located on the outer side of the plurality of support structures 112 and the groups of wing-like structures 111, as shown in FIGS. 1 to 1 As shown in 5, the top view of the ring structure 113 may be as shown in FIG. 6.
  • the ring structure 113 can support and protect the support structure 112 to a certain extent.
  • the ring structure 113 can also form the edge area of the capacitor chip to facilitate subsequent preparation of the capacitor 100.
  • the ring structure 113 is formed by alternately stacking multiple first material layers 10 and multiple second material layers 20, as shown in FIGS. 1 to 5.
  • the multi-wing structure 110 is formed of the first material, that is, the multi-wing structure may use the same material as a certain layer of the ring structure.
  • the multi-wing structure 110 may also be formed of other materials, which is not limited in this application.
  • the first material or the second material may be silicon (including single crystal silicon, polycrystalline silicon, amorphous silicon), silicon oxide, nitride or carbide, silicon-containing glass (including undoped silicon glass) (Undoped Silicon Glass, USG), boro-silicate glass (BSG), phospho-silicate glass (PSG), boro-phospho-silicate glass (BPSG), aluminum ( Al), copper (Cu), nickel (Ni) and other metals, or metal nitrides, carbides, carbon, organic polymers, or a combination or laminated structure of the above materials.
  • silicon-containing glass including undoped silicon glass
  • USG boro-silicate glass
  • PSG phospho-silicate glass
  • BPSG boro-phospho-silicate glass
  • Al aluminum
  • Cu copper
  • Ni nickel
  • metal nitrides carbides, carbon, organic polymers, or a combination or laminated structure of the above materials.
  • first material and the second material are a combination of two types of materials.
  • the second material can be selectively removed.
  • the difference in the corrosion (or etching) rate of the first material and the second material is greater than 5 times. That is, in some specific environments, compared to the first material, the second material is more likely to be corroded (or etched) away.
  • the first material may be silicon
  • the second material may be silicon oxide.
  • the silicon oxide can be removed with a hydrofluoric acid solution or gas and the silicon can be retained.
  • the material of the support structure 112 and the wing-like structure 111 may be silicon, and the material between the different wing-like structures 111 in the same group may be silicon oxide, so that hydrofluoric acid solution or The gas selectively removes silicon oxide and retains silicon to form groups of wing-like structures 111.
  • the first material may be silicon oxide
  • the second material may be silicon, using KOH or NaOH or Tetra methyl ammonium Hydroxide (TMAH) solution, or xenon difluoride (XeF 2 ) gas
  • TMAH Tetra methyl ammonium Hydroxide
  • XeF 2 xenon difluoride
  • the silicon can be removed while the silicon oxide remains.
  • the material of the supporting structure 112 and the wing-like structure 111 may be silicon oxide, and the material between different wing-like structures 111 in the same group may be silicon, so that KOH or NaOH or TMAH is used.
  • the solution or xenon difluoride (XeF 2 ) gas selectively removes silicon and retains silicon oxide to form groups of wing-like structures 111.
  • the first material may be silicon oxide and the second material is silicon nitride.
  • silicon nitride can be removed relatively quickly, while silicon oxide is retained.
  • the material of the support structure 112 and the wing-like structure 111 may be silicon oxide, and the material between different wing-like structures 111 in the same group may be silicon nitride, so that hot phosphoric acid is used.
  • the solution selectively removes silicon nitride and retains silicon oxide to form groups of wing-like structures 111.
  • the stacked structure 120 may form a step structure in the upper region of the ring structure 113, so as to expose different conductive layers in the multi-layer conductive layer through different step surfaces of the step structure. . Therefore, the first external electrode 130 can be electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the step structure, and the second external electrode 140 can also be electrically connected to the multilayer conductive layer through the step structure. Part or all of the even-numbered conductive layers in the layers. In this structure, a plurality of "conductive-dielectric-conductive" basic capacitance units formed by the laminated structure 120 can be connected in parallel to form a large-capacity capacitor.
  • a single wing-like structure 111 in the plurality of groups of wing-like structures 111 includes a plurality of wings 11 (also referred to as branches) extending in the second direction.
  • the multi-wing structure 110 includes two groups of wing-like structures 111 and two supporting structures 112.
  • the supporting structure 112 is hollow columnar.
  • the two groups of wing-like structures 111 are denoted as group 1 and group from left to right. 2.
  • Each group includes four wing-like structures 111 arranged in parallel along the first direction at intervals, wherein the wing-like structures 111 in group 1 and group 2 are arranged around the outer side wall of the corresponding support structure 112.
  • each of the four wing-like structures 111 in the group 1 and the group 2 includes two wings 11. That is, the arrangement of the wings 11 can further increase the surface area of the wing-like structure 111, and the laminated structure covers the multi-wing structure 110, thereby increasing the capacitance density of the capacitor.
  • the support structure 112 of the plurality of support structures 112 is provided with at least one shaft 12 extending along the first direction in its hollow area, and the shaft 12 is connected to the bottom of the support structure 112.
  • the multi-wing structure 110 includes two groups of wing-like structures 111 and two supporting structures 112.
  • the supporting structure 112 is hollow columnar.
  • the two groups of wing-like structures 111 are marked as group 1 and group from left to right. 2.
  • Each group includes four wing-like structures 111 arranged in parallel along the first direction at intervals, wherein the wing-like structures 111 in group 1 and group 2 are arranged around the outer side wall of the corresponding support structure 112.
  • each of the two supporting structures 112 is provided with two shafts 12 connecting the bottom of the supporting structure 112. That is, the arrangement of the shaft 12 can further increase the surface area of the support structure 112, and the laminated structure covers the multi-wing structure 110, thereby increasing the capacitance density of the capacitor.
  • an axial structure may also be provided on the outer side of the support structure 112, which is not limited in the present application.
  • the first external electrode 130 is electrically connected to part or all of the odd-numbered conductive layers in the multilayer conductive layer; the second external electrode 140 is electrically connected to part or all of the multilayer conductive layer Even number of conductive layers. Therefore, in some scenarios, for different first external electrodes 130 and different second external electrodes 140, the laminated structure 120 can form capacitors with different capacitances.
  • the capacitor 100 includes two first external electrodes and two second external electrodes
  • the two first external electrodes are respectively denoted as the first external electrode A and the first external electrode B
  • the two second external electrodes Denoted as the second external electrode C and the second external electrode D
  • the laminated structure includes 5 conductive layers and 4 dielectric layers.
  • the 5 conductive layers are respectively denoted as conductive layer 1, conductive layer 2, and conductive layer 3.
  • Conductive layer 4 and conductive layer 5 the four dielectric layers are denoted as dielectric layer 1, dielectric layer 2, dielectric layer 3, and dielectric layer 4, respectively.
  • first external electrode A is electrically connected to the conductive layer 1 and the conductive layer 3
  • first external electrode B is electrically connected to the conductive layer 1
  • second external electrode C is electrically connected
  • the second external electrode D is also electrically connected to the conductive layer 2 and the conductive layer 4.
  • the conductive Layer 1 and the conductive layer 2 form a capacitor 1
  • the capacitance value is denoted as C1
  • the conductive layer 2 and the conductive layer 3 form a capacitor 2
  • the capacitance value is denoted as C2
  • the conductive layer 3 and the conductive layer 4 form a capacitor 3
  • the capacitance The value is denoted as C3, capacitor 1
  • capacitor 2 and capacitor 3 are connected in parallel
  • the capacitor corresponding to D, the conductive layer 1 and the conductive layer 2 form a capacitor 1, the capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer Layer 4 forms a capacitor 3, the capacitance value is denoted as C3, the conductive layer 4 and the
  • the capacitors corresponding to the first external electrode A and the second external electrode D can also be formed in a similar series-parallel structure, and the capacitors corresponding to the first external electrode B and the second external electrode C can also be formed similarly.
  • the series-parallel structure will not be repeated here. Therefore, the stacked structure 120 can form capacitors with different capacitances.
  • first external electrode A is electrically connected to the conductive layer 1 and the conductive layer 5
  • first external electrode B is electrically connected to the conductive layer 3 and the conductive layer 5
  • second external electrode C is electrically connected to the conductive layer 2 and
  • the conductive layer 4 and the second external electrode D are also electrically connected to the conductive layer 4.
  • the conductive layer 1 and the conductive layer 2 form a capacitor 1
  • the capacitance value is denoted as C1
  • the conductive layer 2 and the conductive layer 4 form a capacitor 2
  • the capacitance value is denoted as C2
  • the capacitor 1 and the capacitor 2 are in parallel
  • the conductive layer 3 and the conductive layer 4 form a capacitor 3
  • the capacitance value is denoted as C3
  • the conductive layer 4 and the conductive layer 5 form
  • the first external electrode 130 is electrically connected to all odd-numbered conductive layers in the multilayer conductive layer; the second external electrode 140 is electrically connected to all even-numbered conductive layers in the multilayer conductive layer.
  • the effect of the laminated structure of increasing the capacitance density of the capacitor can be fully exerted.
  • the capacitor 100 includes two first external electrodes and two second external electrodes
  • the two first external electrodes are respectively denoted as the first external electrode A and the first external electrode B
  • the two second external electrodes Denoted as the second external electrode C and the second external electrode D
  • the laminated structure includes 5 conductive layers and 4 dielectric layers.
  • the 5 conductive layers are respectively denoted as conductive layer 1, conductive layer 2, and conductive layer 3.
  • Conductive layer 4 and conductive layer 5 the four dielectric layers are denoted as dielectric layer 1, dielectric layer 2, dielectric layer 3, and dielectric layer 4, respectively.
  • the first external electrode A is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, and the first external electrode B is electrically connected to the conductive layer 1, the conductive layer 3 and the conductive layer 5, the second The external electrode C is electrically connected to the conductive layer 2 and the conductive layer 4, and the second external electrode D is also electrically connected to the conductive layer 2 and the conductive layer 4, so the first external electrode A corresponds to the second external electrode C
  • the conductive layer 1 and the conductive layer 2 form a capacitor 1, the capacitance value is denoted as C1, the conductive layer 2 and the conductive layer 3 form a capacitor 2, the capacitance value is denoted as C2, the conductive layer 3 and the conductive layer 4 A capacitor 3 is formed, the capacitance value is denoted as C3, the conductive layer 4 and the conductive layer 5 form a capacitor 4, the capacitance value is denoted as C4, the capacitor 1, the capacitor 2, the capacitor 3 and the capacitor 4 are connected in parallel, and the equivalent capacitance i is
  • the multi-wing structure is used as the skeleton, and the laminated structure is arranged on the multi-wing structure, so that the surface area of the laminated structure can be increased, and the result can be obtained with a smaller device size (capacitor chip size).
  • a larger capacitance value can increase the capacitance value density of a capacitor formed with a laminated structure.
  • the support structure in the present application is a hollow structure, which can have a larger surface area, and compared to a columnar support structure, the wing-shaped structure in the present application It is the convex structure formed on the outer side wall of the support structure, that is, the wing-like support is formed on the outer side wall of the support structure, so that the surface area of the multi-wing structure can be increased.
  • the laminated structure covers the multi-wing structure. As the surface area of the wing structure increases, the surface area of the laminated structure also increases correspondingly, which can further increase the capacitance density of the capacitor.
  • the capacitors according to the embodiments of the present application are described above, and the method for preparing the capacitors according to the embodiments of the present application is described below.
  • the method for preparing a capacitor of the embodiment of the present application can prepare the capacitor of the foregoing embodiment of the present application, and the following embodiment and the related description in the foregoing embodiment can be referred to each other.
  • FIG. 9 is a schematic flowchart of a method for manufacturing a capacitor in an embodiment of the present application, but these steps or operations are only examples, and the embodiment of the present application may also perform other operations or modifications of each operation in FIG. 9.
  • FIG. 9 shows a schematic flowchart of a method 200 for manufacturing a capacitor according to an embodiment of the present application.
  • the manufacturing method 200 of the capacitor includes:
  • a multi-wing structure over the substrate, the multi-wing structure including multiple groups of wing-like structures and a plurality of supporting structures, wherein each wing-like structure in each group of wing-like structures is arranged in parallel, and the supporting structure is extended along a first direction
  • the hollow structure of the wing-like structure is a convex structure formed by extending the outer side wall of the supporting structure in a direction perpendicular to the first direction;
  • a capacitor as shown in FIG. 1 can be prepared, or a capacitor prepared based on the multi-wing structure as shown in FIGS. 2 to 8 can be prepared.
  • each material layer described in steps 210-230 refers to the surface of the material layer substantially parallel to the upper surface of the substrate.
  • the first direction may be a direction perpendicular to the substrate 150.
  • the foregoing step 210 may specifically be:
  • a multi-layer structure is prepared over the substrate 150.
  • the multi-layer structure includes a multi-layer first material layer 10 and a multi-layer second material layer 20.
  • the multi-layer first material layer 10 and the multi-layer second material layer 20 form a first A structure in which a material layer 10 and a second material layer 20 alternate with each other, the first material is different from the second material, and the first material layer 10 is in direct contact with the substrate 150;
  • the multilayer structure Based on the multilayer structure, prepare a plurality of grooves extending along the first direction (that is, the multilayer structure at the position of the groove is removed), and on the upper surface of the multilayer structure, the plurality of grooves Depositing the first material (that is, forming a continuous first material layer on the multi-layer structure with grooves) on the bottom and inner sidewalls of the first material to form a plurality of hollow columnar first structures 31 made of the first material, As a basis for forming the plurality of supporting structures 112, the plurality of first structures 31 are connected to each other in this step;
  • a plurality of second structures 32 having a groove shape extending along the first direction are prepared in the remaining multi-layer structure, that is, the multi-layer structure where the second structure 32 is located, including those deposited on the multi-layer structure
  • the first material is removed.
  • the plurality of first structures 31 are separated by the plurality of second structures, and then the second material layer 20 exposed in the plurality of second structures 32 is removed, or in other words, the second structure 32 is used.
  • the remaining second material layer 20 is removed and the first material layer 10 is left to form the multi-wing structure 110.
  • the deposition method of the first material and the second material mentioned above is preferably chemical vapor deposition (CVD), or spin coating, spray coating, thermal oxidation, epitaxy, physical vapor deposition (PVD), atomic layer deposition (ALD), epitaxial growth And many other processes.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • the laminated structure 120 may be formed on the multi-wing structure 110 by using various processes such as thermal oxidation, atomic layer deposition (ALD), chemical vapor deposition (Chemical Vapor Deposition, CVD) and so on.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • the second material can be selectively removed.
  • the difference in the corrosion (or etching) rate of the first material and the second material is greater than 5 times. That is, in the same corrosion or etching environment, the corrosion (or etching) rate of the second material is at least 5 times the corrosion (or etching) rate of the first material, so it can be achieved by controlling the choice of etching material and time The second material is removed and the first material is retained.
  • the supporting structure 112 has a hollow column shape or a groove shape.
  • part or all of the conductive layers in the multilayer conductive layer are conformal to the multi-wing structure 110.
  • a part of the conductive layer of the multilayer conductive layer is conformal to the multi-wing structure 110, and another part of the conductive layer is complementary to the multi-wing structure 110 in shape.
  • a single wing-like structure 111 in the plurality of groups of wing-like structures 111 includes a plurality of wings 11 extending in a direction perpendicular to the first direction.
  • the support structure 112 of the plurality of support structures 112 is provided with at least one shaft 12 extending along the first direction in its hollow area.
  • the multi-wing structure 110 further includes a ring structure 113 located outside the plurality of supporting structures 112 and the groups of wing-like structures 111.
  • the ring structure 113 is formed by alternately stacking multiple first material layers 10 and multiple second material layers 20.
  • the thickness of the first material layer 10 and the second material layer 20 can be adjusted according to the capacitance, frequency characteristics, loss and other requirements of the capacitor.
  • the multi-wing structure is formed of the first material.
  • the multi-wing structure 110 is made of a conductive material, and the second external electrode 140 is electrically connected to the multi-wing structure 110.
  • the multi-wing structure 110 is formed of a material with a resistivity less than a threshold value, or a heavily doped conductive layer or a heavily doped conductive region is formed on the surface of the multi-wing structure 110.
  • the multi-wing structure 110 includes a main body material and a conductive layer or conductive area on the surface of the main body material, and the second external electrode 140 is electrically connected to the multi-wing structure 110 by being electrically connected to the conductive layer or conductive area.
  • the method 200 further includes:
  • the isolation ring 160 Prepare the isolation ring 160, wherein the isolation ring 160 is located above the ring structure 113, and the isolation ring 160 extends along the first direction into the laminated structure 120, the first external electrode 130 and the second external connection
  • the electrode 140 is not electrically connected to the area of the laminated structure 120 outside the isolation ring 160.
  • the method 200 further includes:
  • the first conductive via structure 30 is located in the isolation ring 160, the second conductive via structure 40 is located outside the isolation ring 160 near the center of the capacitor, and the first external electrode 130 passes through the at least one
  • the first conductive via structure 30 is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer, and the second external electrode 140 is electrically connected to the multilayer conductive layer through the at least one second conductive via structure 40 Part or all of the even-numbered conductive layers in the layers.
  • the method 200 further includes:
  • a filling structure 170 is prepared.
  • the filling structure 170 covers the laminated structure 120 and fills the voids formed by the laminated structure 120.
  • the wing-shaped structure 111 of the plurality of groups of wing-shaped structures 111 that is in contact with the substrate 150 has a discontinuous area between different support structures 112.
  • the substrate 150 forms a substrate trench 151 extending along the first direction at the discontinuous region, and the stacked structure 120 is disposed in the substrate trench 151.
  • the wing-shaped structure 111 in contact with the substrate 150 in the plurality of groups of wing-shaped structures 111 is continuous between different supporting structures 112.
  • the support structure 112 extends from the upper surface of the substrate 150 into the substrate 150 along the first direction.
  • the foregoing step 230 may specifically be:
  • the electrode layer is prepared above the laminated structure 120.
  • the electrode layer includes at least one first conductive region and at least one second conductive region that are separated from each other.
  • the first conductive region forms the first external electrode 130, and the second conductive region The area forms the second external electrode 140.
  • the first external electrode 130 and/or the second external electrode 140 may be formed by PVD, electroplating, electroless plating, and other processes.
  • the method 200 further includes:
  • An interconnect structure 180 is prepared, wherein the first external electrode 130 and/or the second external electrode 140 are electrically connected to the conductive layer in the multilayer conductive layer through the interconnect structure 180.
  • the interconnect structure 180 includes at least one first conductive via structure 30, at least one second conductive via structure 40, and at least one insulating layer 50, wherein the first conductive via structure 30 and the second conductive via structure 30
  • the via structure 40 penetrates the at least one insulating layer 50
  • the first external electrode 130 is electrically connected to some or all of the odd-numbered conductive layers in the multilayer conductive layer through the at least one first conductive via structure 30, and the second
  • the external electrode 140 is electrically connected to part or all of the even-numbered conductive layers in the multilayer conductive layer through the at least one second conductive via structure 40.
  • the at least one insulating layer 50 may be formed by spin coating, spray coating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or other processes.
  • first conductive via structure 30 and the second conductive via structure 40 may be formed by processes such as PVD, Metal-organic Chemical Vapor Deposition (MOCVD), and ALD in the via.
  • processes such as PVD, Metal-organic Chemical Vapor Deposition (MOCVD), and ALD in the via.
  • the stacked structure 120 includes two conductive layers and one dielectric layer.
  • the above-mentioned steps 210 to 230 may specifically be the preparation process shown in step a to step k (FIG. 10a-10k), and the capacitor 100 as shown in FIG. 1 may be prepared.
  • capacitors 100 prepared based on the multi-wing structure shown in FIGS. 2 to 8 can also be prepared, which can refer to the capacitor preparation process shown in steps a to k (FIGS. 10a-10k). For brevity, here is No longer.
  • Step a select a silicon wafer as the substrate 150, and alternately deposit 3 layers of the first material 10 and 3 layers of the second material 20 on the upper surface of the substrate 150 to form a multilayer structure, the first material layer 10 and the lining
  • the bottom 150 is in direct contact, as shown in FIG. 10a, for example, the first material is silicon oxide, and the second material is silicon nitride;
  • Step b spin-coating a layer of photoresist on the surface of the multilayer structure, open several gaps in the photoresist after exposure and development, and then use the photoresist as a mask, and use a dry etching process to remove uncovered photoresist
  • the multilayer structure (the first material layer 10 and the second material layer 20) is formed to form three first structures 31 extending along the first direction, and finally the photoresist is removed.
  • the first structure is Hollow column shape or groove shape;
  • Step c using a CVD process to deposit a first material on the upper surface of the multilayer structure, the bottom of the three first structures 31 and the inner sidewalls to form three supporting structures 112, as shown in FIG. 10c;
  • Step d using photolithography combined with a dry etching process to form two second structures 32 in the shape of a hollow column and/or groove extending along the first direction in the gap of the first structure 31, as shown in FIG. 10d ;
  • Step e Use the two second structures 32 as release holes, and use hot phosphoric acid solution as an etchant to remove the second material layer (silicon nitride) in contact with the release holes to form a multi-wing structure 110, as shown in FIG. 10e ;
  • Step f using the ALD process, deposit a layer of TiN as the conductive layer 21 on the surface of the multi-wing structure 110, then deposit a layer of aluminum oxide as the dielectric layer 23, and finally deposit a layer of TiN as the conductive layer 22, as shown in FIG. 10f;
  • Step g using a CVD process to deposit silicon oxide as the filling structure 170, filling and covering the entire multi-wing structure 110, as shown in FIG. 10g; alternatively, the MOCVD process can also be used to deposit metal tungsten as the filling structure 170; of course , Step g may not be present, and directly use the conductive layer 22 in step f to fill all the gaps;
  • Step h spin-coating a layer of photoresist on the surface of the filling structure 170, open a closed ring-shaped notch of the photoresist after exposure and development, and then use a dry etching process to remove the filling material and the conductive layer 22 in the notch to expose
  • the dielectric layer 23 forms an annular groove 60, as shown in FIG. 10h;
  • Step i using a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) process to deposit a layer of insulating material USG as the insulating layer 50, and fill the annular trench 60, as shown in FIG. 10i;
  • PECVD plasma enhanced chemical vapor deposition
  • Step j using photolithography combined with a dry etching process to prepare a plurality of via holes 70, some of the via holes 70 are located in the region of the annular trench 60, penetrate the insulating layer 50 and the dielectric layer 23, and expose the conductive layer 21 at the bottom ; Other via holes 70 are located in the inner area of the annular trench 70, penetrate the insulating layer 50 and the filling structure 170, and expose the conductive layer 22 at the bottom, as shown in FIG. 10j;
  • Step k using a physical vapor deposition (Physical Vapor Deposition, PVD) process to deposit a layer of TiN as a barrier layer and an adhesion layer on the inner walls of the plurality of via holes 70, and then use the MOCVD process to fill the plurality of via holes 70 with metal tungsten , Forming a conductive via structure 30 and a conductive via structure 40; then, using a chemical mechanical polishing (CMP) process to remove the excess conductive material on the surface of the insulating layer 50; then, using a PVD process to smooth the insulation A layer of Ti/TiN and a layer of metallic aluminum are deposited on the surface of the layer 50; finally, the Ti/TiN/Al is patterned by photolithography combined with an etching process to obtain a first external electrode 130 and a second external electrode of the capacitor
  • the electrode 140 is the capacitor shown in FIG.
  • shapes of the different first structures 31 among the above three first structures 31 may be the same or different, which is not limited in this application.
  • the shapes of the different second structures 32 in the above two second structures 32 may be the same or different, which is not limited in the present application.
  • the capacitance value of the capacitor can be increased by preparing the multi-wing structure.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne un condensateur et son procédé de fabrication, qui peut fabriquer un condensateur ayant un petit volume et une densité de capacité élevée. Le condensateur comprend : une structure à ailes multiples, comprenant de multiples groupes de structures d'aile et de multiples structures de support, les structures d'aile dans chaque groupe de structures d'aile étant disposées en parallèle, les structures de support étant des structures creuses s'étendant dans une première direction, et chaque structure d'aile étant une structure convexe formée par extension d'une paroi latérale externe de la structure de support dans une direction perpendiculaire à la première direction ; une structure stratifiée, la structure stratifiée recouvrant la structure à ailes multiples, et la structure stratifiée comprenant au moins une couche diélectrique et de multiples couches conductrices, la ou les couches diélectriques et les multiples couches conductrices formant une structure dans laquelle les couches conductrices et la couche diélectrique sont adjacentes les unes à aux autres ; au moins une première électrode externe, connectée électriquement à une partie ou à la totalité des couches conductrices à nombre impair parmi les multiples couches conductrices ; et au moins une seconde électrode externe, connectée électriquement à une partie ou à la totalité des couches conductrices paires parmi les multiples couches conductrices.
PCT/CN2020/082573 2020-03-31 2020-03-31 Condensateur et son procédé de fabrication WO2021196018A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110108548A (ko) * 2010-03-29 2011-10-06 주식회사 하이닉스반도체 고종횡비를 갖는 캐패시터 제조 방법
US20120193757A1 (en) * 2011-01-31 2012-08-02 Tah-Te Shih Capacitor structure and fabrication method thereof
CN107706206A (zh) * 2017-11-02 2018-02-16 睿力集成电路有限公司 电容器阵列及其形成方法、半导体器件
CN109065501A (zh) * 2018-07-19 2018-12-21 长鑫存储技术有限公司 电容阵列结构及其制备方法
CN110164851A (zh) * 2019-05-08 2019-08-23 中国科学院微电子研究所 三维固态电容器的制造方法、三维固态电容器及电子设备
CN110785840A (zh) * 2019-09-17 2020-02-11 深圳市汇顶科技股份有限公司 电容器及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110108548A (ko) * 2010-03-29 2011-10-06 주식회사 하이닉스반도체 고종횡비를 갖는 캐패시터 제조 방법
US20120193757A1 (en) * 2011-01-31 2012-08-02 Tah-Te Shih Capacitor structure and fabrication method thereof
CN107706206A (zh) * 2017-11-02 2018-02-16 睿力集成电路有限公司 电容器阵列及其形成方法、半导体器件
CN109065501A (zh) * 2018-07-19 2018-12-21 长鑫存储技术有限公司 电容阵列结构及其制备方法
CN110164851A (zh) * 2019-05-08 2019-08-23 中国科学院微电子研究所 三维固态电容器的制造方法、三维固态电容器及电子设备
CN110785840A (zh) * 2019-09-17 2020-02-11 深圳市汇顶科技股份有限公司 电容器及其制作方法

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