WO2021189578A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021189578A1
WO2021189578A1 PCT/CN2020/086074 CN2020086074W WO2021189578A1 WO 2021189578 A1 WO2021189578 A1 WO 2021189578A1 CN 2020086074 W CN2020086074 W CN 2020086074W WO 2021189578 A1 WO2021189578 A1 WO 2021189578A1
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WO
WIPO (PCT)
Prior art keywords
opening
cross
substrate
groove
layer
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PCT/CN2020/086074
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English (en)
French (fr)
Inventor
田甜
金一坤
赵斌
张鑫
赵军
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/054,800 priority Critical patent/US11429002B2/en
Publication of WO2021189578A1 publication Critical patent/WO2021189578A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Definitions

  • This application relates to the display field, and in particular to a display panel and a display device.
  • LCD(Liquid Crystal display (liquid crystal display) is a widely used flat panel display, which mainly realizes picture display by modulating the intensity of the light field of the backlight source through a liquid crystal switch.
  • a color filter layer is formed on the array first, and then a pixel electrode layer is formed on the color filter layer, and the pixel electrode layer Through the contact vias and the source/drain electrodes in the array layer.
  • an opening area needs to be formed on the color filter layer in the existing manufacturing process, and then a contact via is formed in the center of the opening area.
  • the edge of the opening area usually forms a slope with a certain angle, which reduces the distance between the contact hole and the boundary of the opening area, resulting in the size of the opening area not conforming to the rules of pixel design, affecting The formation process of the contact hole, thereby affecting the display effect of the product.
  • the present application provides a display panel and a display device to solve the technical problem of horizontal crosstalk in the existing display panel.
  • the present application provides a display panel, which includes a first substrate, a second substrate disposed opposite to the first substrate, and a liquid crystal layer located between the first substrate and the second substrate;
  • the first substrate includes a first substrate, an array structure layer on the first substrate, a color resist layer on the array structure layer, and a pixel electrode layer on the color resist layer;
  • the color resist layer includes at least three color resist blocks, any one of the color resist blocks is provided with a first opening, and a first opening is provided in the first opening to electrically connect the pixel electrode layer and the array structure layer.
  • the first via hole, and at least one compensation portion disposed close to the side edge of the first opening.
  • the compensation portion includes a first groove, and the first groove and the first opening have an overlapping area.
  • the orthographic projection of the first groove on the first opening is located in the first opening;
  • the orthographic projection of the first groove on the first opening is located in the first opening, and the orthographic projection of the first groove on the first opening is located adjacent to the first opening The color resistance area.
  • the first opening includes a first side surface and a second side surface adjacent to the first side surface and vertically arranged;
  • the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the cross-sectional area of the first groove on the first cross-section gradually increases. In the direction, the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the first cross section is parallel to the second side surface, and the first cross section is parallel to the second side surface.
  • the shape of the first groove in the first section or the second section includes at least one of a trapezoid, a square, or a rectangle.
  • the compensation part includes the first groove far away from the adjacent color resist block and a second groove close to the adjacent color resist block;
  • the cross-sectional area of the first groove on the first cross-section or the second cross-section is smaller than the cross-sectional area of the second groove on the first cross-section or the second cross-section.
  • the compensation portion includes a barrier layer located at the outer ring of the first opening, and the barrier layer is arranged next to the color barrier block.
  • the distance between the first surface of the barrier layer away from the first substrate and the first substrate is greater than or equal to the surface of the color resist layer away from the first substrate The distance from the first substrate;
  • the barrier layer is close to the second surface of the first substrate and extends from the contact surface of the first opening and the first via hole to the array structure layer.
  • the second surface of the barrier layer is in contact with the passivation layer of the array structure layer.
  • the display panel further includes the second opening, the first side of the second opening is close to the first opening, and the second side of the second opening is close to the adjacent color resist .
  • This application also proposes a display device, wherein the display device includes a backlight module and a display panel located on the backlight module, the display panel includes a first substrate, and is disposed opposite to the first substrate A second substrate of, and a liquid crystal layer located between the first substrate and the second substrate;
  • the first substrate includes a first substrate, an array structure layer on the first substrate, a color resist layer on the array structure layer, and a pixel electrode layer on the color resist layer;
  • the color resist layer includes at least three color resist blocks, any one of the color resist blocks is provided with a first opening, and a first opening is provided in the first opening to electrically connect the pixel electrode layer and the array structure layer.
  • the first via hole, and at least one compensation portion disposed close to the side edge of the first opening.
  • the compensation portion includes a first groove, and the first groove and the first opening have an overlapping area.
  • the orthographic projection of the first groove on the first opening is located in the first opening; or,
  • the orthographic projection of the first groove on the first opening is located in the first opening, and the orthographic projection of the first groove on the first opening is located adjacent to the first opening The color resistance area.
  • the first opening includes a first side surface and a second side surface adjacent to the first side surface and vertically arranged;
  • the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the cross-sectional area of the first groove on the first cross-section gradually increases. In the direction, the cross-sectional area of the first groove on the first cross-section gradually increases;
  • the first cross section is parallel to the second side surface, and the first cross section is parallel to the second side surface.
  • the shape of the first groove in the first cross section or the second cross section includes at least one of a trapezoid, a square, or a rectangle.
  • the compensation part includes the first groove far away from the adjacent color resist block and a second groove close to the adjacent color resist block;
  • the cross-sectional area of the first groove on the first cross-section or the second cross-section is smaller than the cross-sectional area of the second groove on the first cross-section or the second cross-section.
  • the compensating portion includes a barrier layer located in the outer ring of the first opening, and the barrier layer and the color barrier block are arranged next to each other.
  • the distance between the first surface of the barrier layer away from the first substrate and the first substrate is greater than or equal to the distance between the surface of the color resist layer away from the first substrate and the first substrate spacing;
  • the barrier layer is close to the second surface of the first substrate and extends from the contact surface of the first opening and the first via hole to the array structure layer.
  • the second surface of the barrier layer is in contact with the passivation layer of the array structure layer.
  • the display panel further includes the second opening, the first side of the second opening is close to the first opening, and the second side of the second opening is close to the adjacent color resist .
  • At least one compensation portion is provided near the side edge of the first opening, so that when the first via hole between the pixel electrode layer and the source/drain is formed in the first opening, it is avoided to approach the first opening.
  • the color resist material of an opening flows into the first opening, which increases the distance between the first via hole and the side of the first opening, so that the size of the first opening conforms to the pixel design rule, and the product is improved.
  • the display effect is provided near the side edge of the first opening, so that when the first via hole between the pixel electrode layer and the source/drain is formed in the first opening, it is avoided to approach the first opening.
  • the color resist material of an opening flows into the first opening, which increases the distance between the first via hole and the side of the first opening, so that the size of the first opening conforms to the pixel design rule, and the product is improved.
  • Figure 1 is the first structural diagram of the display panel of this application.
  • Figure 2 is a second structure diagram of the display panel of this application.
  • FIG. 3 is a top view of the first structure of the array substrate in the display panel of this application.
  • FIG. 4 is a cross-sectional structure diagram of section AA in FIG. 3;
  • FIG. 5 is a second top structural view of the array substrate in the display panel of this application.
  • FIG. 6 is a cross-sectional structure diagram of section AA in FIG. 5;
  • FIG. 7 is a cross-sectional view of the first side surface of the first opening in the display panel of the present application.
  • FIG. 9 is a third top structural view of the array substrate in the display panel of this application.
  • FIG. 10 is a fourth top structural view of the array substrate in the display panel of this application.
  • Figure 11 is a cross-sectional structural view of section AA in Figure 10;
  • FIG. 12 is a fifth top view structure diagram of the array substrate in the display panel of this application.
  • this application proposes a display panel 400, which includes a first substrate 100, a second substrate 200 disposed opposite to the first substrate 100, and located between the first substrate 100 and the The liquid crystal layer 300 between the second substrates.
  • the first substrate 100 includes a first substrate 10, an array structure layer 20 on the first substrate 10, a color resist layer 30 on the array structure layer 20, and a color resist layer 30 on the color resist layer. ⁇ pixel electrode layer 80.
  • the color resist layer 30 includes at least three color resist blocks, any one of the color resist blocks is provided with a first opening 40, and the first opening 40 is provided with the pixel electrode layer 80 and the array structure
  • the first via 207 electrically connected to the layer 20 and at least one compensation portion disposed near the side edge of the first opening 40.
  • At least one compensation portion is provided near the side edge of the first opening 40, so that when the first via hole between the pixel electrode layer 80 and the source/drain is formed in the first opening 40, avoiding approaching
  • the color resist material of the first opening 40 flows into the first opening 40, which increases the distance between the first via 207 and the side of the first opening 40, so that the size of the first opening 40 conforms to
  • the rules of pixel design improve the display effect of the product.
  • the first substrate 100 described below is a COA substrate.
  • the second substrate 200 includes a second substrate 91 and a second common electrode layer 92 on the second substrate 91.
  • the liquid crystal layer 300 is located between the pixel electrode layer 80 and the second common electrode layer 92.
  • the first substrate 10 and the second substrate 91 may be a rigid substrate or a flexible substrate.
  • the materials of the first substrate 10 and the second substrate 91 may be made of materials such as glass and quartz.
  • the first substrate 10 and the second substrate 91 may be made of materials such as polyimide.
  • the substrate structure is generally set as a rigid substrate, which will not be described in detail here.
  • the array structure layer 20 includes a plurality of thin film transistors.
  • the thin film transistor may be of an etch-stop type, a back-channel etch type, or a top-gate thin-film transistor type structure, which is not specifically limited.
  • the thin film transistors in FIGS. 1 and 2 are conventional bottom-gate thin film transistors, and the specific structure is not described in detail in this application.
  • the display panel 400 further includes a spacer layer 93 located between the pixel electrode layer 80 and the second common electrode layer 92.
  • the spacer layer 93 may be located on the color resist layer in the first substrate.
  • the spacer layer 93 may be located on the second substrate.
  • the specific position of the spacer layer 93 is not limited below.
  • the display panel 400 further includes a light-shielding structure located between adjacent color resistors.
  • the light-shielding structure may be located on the first substrate or the second substrate, which is not specifically limited herein.
  • the color resist layer 30 includes a plurality of color resist blocks of different colors.
  • the color resistance block may be one of a red color resistance block, a green color resistance block, and a blue color resistance block.
  • the display panel 400 further includes a first via hole 207 passing through the color resist layer 30 and the passivation layer 206, and the pixel electrode layer 80 passes through the first via hole 207 and the first via hole 207.
  • the source/drain of the array structure layer 20 are electrically connected.
  • the pixel electrode layer 80 is used to provide a first voltage for deflection of liquid crystal molecules
  • the second common electrode layer 92 is used to provide a second voltage for deflection of liquid crystal molecules.
  • the second voltage is a constant voltage
  • the display panel 400 changes the pressure difference between the two sides of the liquid crystal layer by changing the magnitude of the first voltage to make the liquid crystal molecules deflect at different angles.
  • the material of the second common electrode layer 92 and the pixel electrode layer 80 can be, but is not limited to, ITO.
  • the color resist layer 30 includes at least a first color resist block 301 and a second color resist block 302 that are adjacently disposed, the first color resist block 301 and the second color resist block The color of 302 is different.
  • both the first color resist block 301 and the second color resist block 302 are provided with the first opening 40, and the first opening 40 is provided with the first via 207 .
  • the first opening 40 and the first via 207 Need to comply with certain design rules.
  • the diameter of the first via 207 in the sub-pixel needs to be greater than 8.5 microns, and the distance between the first via 207 and the boundary of the first opening 40 needs to be greater than 9 microns .
  • the color resist layer 30 further includes at least one compensation portion disposed near the side edge of the first opening 40.
  • FIG. 4 is a cross-sectional view of section AA in FIG.
  • the thin film transistor may include an active layer 201 on the first substrate 10, a gate insulating layer 202 on the active layer, a gate layer 203 on the gate insulating layer 202, and a gate insulating layer 203 on the gate insulating layer 202.
  • the compensation portion includes a first groove 51, and the first groove 51 and the first opening 40 have an overlapping area.
  • the first groove 51 is arranged next to the bottom edge of the first opening 40.
  • the orthographic projection of the first groove 51 on the first opening 40 is located in the area of the first opening 40. Since the edge area of the first opening 40 and the color resist layer 30 have a certain level difference, the fluidity of the color resist material causes the color resist material to flow into the first opening 40.
  • the first groove 51 is arranged so that the color resist material flowing into the first opening 40 flows into the first groove 51, so that the bottom surface of the first opening 40 is flat, and the first pass is ensured.
  • the distance between the hole 207 and the boundary of the first opening 40 makes the size of the first opening 40 conform to the pixel design rule, avoiding the subsequent manufacturing process of the first via 207 from being affected by the first opening 40, so that The pixel electrode layer 80 is normally connected to the array structure layer 20.
  • Figure 6 is a cross-sectional view of section AA in Figure 5.
  • the orthographic projection of the first groove 51 on the first opening 40 is located in the first opening 40, and the orthographic projection of the first groove 51 on the first opening 40 is located in the same direction as the The color resistance area adjacent to the first opening 40.
  • the dotted line in FIG. 5 is the opening boundary of the first groove 51 on the color resist layer 30.
  • the first opening 40 includes a first side surface 401 and a second side surface 402 adjacent to the first side surface 401 and vertically arranged.
  • the first groove 51 is located in an area close to the first side surface 401 and the second side surface 402 in the first opening 40.
  • the junction area between the first side surface 401 and the second side surface 402 is the color resist material accumulation area.
  • the color resist material in the vertex area is larger. Therefore, compared with the non-vertical corner area, the color resist material in this area is larger.
  • the fluidity of the material is relatively large, which belongs to the area where the gradient of the color resist material is concentrated.
  • the color resist material in the vertex area directly flows into the first groove 51 , Making the bottom surface of the first opening 40 flat, ensuring the distance between the first via 207 and the boundary of the first opening 40, and avoiding the accumulation of color resist materials in the top corner area in the later stage to form a slope, so that the The size of the first opening 40 conforms to the rules of pixel design, ensuring that the process of the first via 207 is not affected by the color resist material in the first opening 40, so that the pixel electrode layer 80 and the array structure Normal connection of layer 20.
  • the cross-sectional area of the first groove 51 on the first cross section gradually increases.
  • the cross-sectional area of the first groove 51 on the first cross section gradually increases; or, in conjunction with FIGS. 7 and 8.
  • the cross-sectional area of the first groove 51 in the first section gradually increases, and when it is away from the first side surface 401 to approaching In the direction of the first side surface 401, the cross-sectional area of the first groove 51 on the first cross section gradually increases.
  • the change of the area may be a non-linear change, and the overall trend may be as above.
  • first cross section is parallel to the second side surface 402, and the first cross section is parallel to the second side surface 402.
  • the junction area between the first side surface 401 and the second side surface 402 is the color resist material accumulation area, and the color resist material in the vertex area has a relatively large volume. Therefore, compared with the non-apex area, the color resist material in this area has greater fluidity and belongs to the area where the gradient of the color resist material is concentrated. The accumulation of color resist material away from the top corner area is less. Therefore, in the above-mentioned embodiment, the depth or width of the first groove 51 corresponding to the top corner area of the first opening 40 is increased to increase the capacity of the color resist material in this area, and the color resist material is kept away from the area.
  • the accommodating capacity of the first groove 51 in the top corner area of the first opening 40 enables the color resist material accumulated in each area to be accommodated by the first groove 51, that is, to ensure that the bottom surface of the first opening 40 is flat , The distance between the first via hole 207 and the boundary of the first opening 40 is ensured, and the color resist material in the later period is prevented from accumulating on the edge area of the first opening 40 to form a slope, so that the first opening 40 is The size conforms to the rules of pixel design, ensuring that the process of the first via 207 is not affected by the color resist material in the first opening 40, so that the pixel electrode layer 80 and the array structure layer 20 are normally connected .
  • the shape of the first groove 51 in the first section or the second section includes at least one of a trapezoid, a square, or a rectangle.
  • the shape of the first groove 51 in the first cross section or the second cross section may be trapezoidal, without increasing the first groove 51.
  • the internal capacity of the first groove 51 is increased, and the color resist material is prevented from forming protrusions in the area corresponding to the first groove 51.
  • the compensation portion includes the first groove 51 far away from the adjacent color resist block and the second groove 52 close to the adjacent color resist block.
  • the cross-sectional area of the first groove 51 on the first cross-section or the second cross-section is smaller than the cross-sectional area of the second groove 52 on the first cross-section or the second cross-section.
  • the second opening 42 is provided in the region of the first opening 40 close to the adjacent color resist. Therefore, when the processes of the first opening 40 and the second opening 42 are completed, due to the fluidity of the color resist material, the color resist material located near the second opening 42 easily passes through the first color resist.
  • the gap between the block 301 and the second color resist block 302 flows into the display area of the display panel 400, and the color resist material on the first color resist block 301 may flow to the second color resist block 302.
  • the display area causes a technical problem of color mixing in the display panel 400.
  • the compensation portion includes a barrier layer 60 located on the outer circumference of the first opening 40, and the barrier layer 60 is arranged next to the color barrier block.
  • FIG. 11 is a cross-sectional view of section AA in FIG. 10.
  • the compensation part in this embodiment is a barrier structure.
  • the barrier layer 60 is located in the color barrier layer 30 and is located close to the first opening 40.
  • the fluidity of the color resist material causes the color resist material to flow into the first opening 40, and this embodiment passes through the partition
  • the arrangement of the barrier layer 60 prevents the color resist material from flowing into the first opening 40, makes the bottom surface of the first opening 40 flat, and ensures the distance between the first via 207 and the boundary of the first opening 40 , So that the size of the first opening 40 conforms to the rules of pixel design, avoiding the subsequent manufacturing process of the first via 207 from being affected by the first opening 40, so that the pixel electrode layer 80 and the array structure layer 20 normal connections.
  • the distance between the first surface 601 of the barrier layer 60 away from the first substrate 10 and the first substrate 10 is greater than or equal to that of the color resist layer 30 away from the first substrate.
  • the distance between the surface of the bottom 10 and the first substrate 10. by increasing the height of the barrier layer, the vertical height of the barrier layer 60 is greater than the vertical height of the color barrier layer 30, which further avoids the color barrier material close to the first opening 40 It flows into the first opening 40.
  • the barrier layer 60 is close to the second surface 602 of the first substrate 10 and extends from the contact surface of the first opening 40 and the first via 207 to the array structure layer 20 .
  • the bottom surface of the barrier layer 60 exceeds the bottom surface of the first opening 40 and extends toward the array structure layer 20. Due to the fluidity of the color barrier material, even if the barrier layer 60 blocks the upper structure of the color barrier layer 30, it can intrude into the first opening 40 from below the barrier layer by pressing. However, in the present application, by extending the barrier layer 60 toward the array structure layer 20, the flow of the color resist material into the first opening 40 is further avoided.
  • the second surface 602 of the barrier layer 60 is in contact with the passivation layer 206 of the array structure layer.
  • the barrier layer 60 is formed on the array structure layer 20. In the process of forming the array structure layer 20, the barrier layer 60 may be formed first. The arrangement of the barrier layer 60 in this embodiment can completely avoid the intrusion of the color resist material.
  • the compensation part may further include a third groove 53 on the first protrusion 70.
  • the third groove 53 is used to remove a part of the area of the first protrusion 70 facing the first via hole 207, and reduce the center of the first protrusion 70 and the first via hole 207. spacing.
  • the third groove 53 may be a triangle, that is, the three-dimensional structure is a triangular prism, so that the first protrusion 70 faces the first via hole.
  • the third surface 403 of 207 is a flat surface.
  • the third groove 53 in the area where the first protrusion 70 faces the first via hole 207, part of the color resist material on the first protrusion 70 is removed, thereby reducing
  • the distance between the first protrusion 70 and the first via 207 ensures that the size of the first opening 40 conforms to the pixel design rule, and prevents the subsequent manufacturing process of the first via 207 from being affected by the second
  • the influence of an opening 40 makes the pixel electrode layer 80 and the array structure layer 20 normally connect.
  • the appearance of the third groove 53 makes the area between the first protrusion 70 and the first side surface 403 change from a rectangular structure to a trapezoidal structure, which increases the color resistance capacity of this area, and further The overflow of color resistance from the second opening 42 is avoided.
  • the third surface 403 may also be a curved surface structure, for example, the third surface 403 is a convex curved surface or an inner concave curved surface.
  • the third groove 53 in this embodiment can be applied to any of the foregoing embodiments, and is not limited to the structure of FIG. 12.
  • the thin film transistor structure located under the color resist material inside the first opening is represented by a shaded structure.
  • the thin film transistor is colored It is blocked by the blocking material and cannot be seen in the top view of the structure.
  • the application also proposes a display device, wherein the display device includes a backlight module and the above-mentioned display panel on the backlight module.
  • the working principle of the display device in this embodiment is the same as or similar to the working principle of the above-mentioned display panel, and will not be repeated here.
  • This application proposes a display panel and a display device, which include a first substrate, a second substrate, and a liquid crystal layer located between the first substrate and the second substrate;
  • the first substrate includes a first substrate A bottom, an array structure layer, a color resist layer on the array structure layer, and a pixel electrode layer on the color resist layer;
  • the color resist layer includes at least three color resist blocks, any of the color resist A first opening is provided in the block, and a first via hole for electrically connecting the pixel electrode layer and the array structure layer is provided in the first opening.
  • at least one compensation portion is provided near the side edge of the first opening, so that when the first via hole between the pixel electrode layer and the source/drain is formed in the first opening, it is avoided to approach the first opening.
  • the color resist material of an opening flows into the first opening, which increases the distance between the first via hole and the side of the first opening, so that the size of the first opening conforms to the pixel design rule, and the product is improved.
  • the display effect is

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Abstract

一种显示面板（400）及显示装置，其包括第一基板（100）、第二基板（200）、及液晶层（300）；第一基板（100）包括第一衬底（10）、阵列结构层（20）、位于阵列结构层（20）上的色阻层（30）、及位于色阻层（30）上的像素电极层（80）；色阻层（30）包括至少三个色阻块，任一色阻块内设置有一第一开口（40），第一开口（40）内设置有使像素电极层（80）与阵列结构层（20）电连接的第一过孔（207）。

Description

显示面板及显示装置 技术领域
本申请涉及显示领域，特别涉及一种显示面板及显示装置。
 背景技术
LCD(Liquid crystal displays，液晶显示器)是一种被广泛应用的平板显示器，主要是通过液晶开关调制背光源光场强度来实现画面显示。
在现有COA（CF on Array，彩色滤光层位于阵列上）面板的制程工艺中，一般先在阵列上形成彩色滤光层，其次在彩色滤光层上形成像素电极层，而像素电极层通过接触过孔与阵列层中的源/漏极电极。其中，由于彩色滤光层的厚度较大，现有制程中需要在彩色滤光层上形成开口区，进而在开口区的中心形成接触过孔。而由于彩色滤光层的材料具有一定流动性，该开口区的边缘通常会形成一定角度的斜坡，缩小了接触孔与开口区边界的间距，导致开口区的尺寸不符合像素设计的规则，影响了接触孔的形成工艺，进而影响了产品的显示效果。
因此，亟需一种显示面板以解决上述技术问题。
 技术问题
本申请提供一种显示面板及显示装置，以解决现有显示面板出现水平串扰的技术问题。
 技术解决方案
本申请提供了一种显示面板，其包括第一基板、与所述第一基板相对设置的第二基板、及位于所述第一基板与所述第二基板之间的液晶层；
所述第一基板包括第一衬底、位于所述第一衬底上的阵列结构层、位于所述阵列结构层上的色阻层、及位于所述色阻层上的像素电极层；
所述色阻层包括至少三个色阻块，任一所述色阻块内设置有一第一开口，所述第一开口内设置有使所述像素电极层与所述阵列结构层电连接的第一过孔、以及靠近所述第一开口侧边缘设置的至少一补偿部。
在本申请的显示面板中，所述补偿部包括第一凹槽，所述第一凹槽与所述第一开口具有重叠区。
在本申请的显示面板中，所述第一凹槽在所述第一开口上的正投影位于所述第一开口内；或者，
所述第一凹槽在所述第一开口上的正投影位于所述第一开口内，且所述第一凹槽在所述第一开口上的正投影位于与所述第一开口相邻的色阻区内。
在本申请的显示面板中，所述第一开口包括第一侧面及与所述第一侧面相邻及垂直设置的第二侧面；
在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加，在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；
所述第一截面与所述第二侧面平行，所述第一截面与所述第二侧面平行。
在本申请的显示面板中，所述第一凹槽在第一截面或第二截面的形状包括梯形、正方形或长方形中的至少一种。
在本申请的显示面板中，所述补偿部包括远离相邻所述色阻块的所述第一凹槽及靠近相邻所述色阻块的第二凹槽；
其中，所述第一凹槽在第一截面或第二截面上的截面积小于所述第二凹槽在第一截面或第二截面上的截面积。
在本申请的显示面板中，所述补偿部包括位于所述第一开口外圈的隔档层，所述隔档层与所述色阻块紧邻设置。
在本申请的显示面板中，所述隔档层远离所述第一衬底的第一表面与所述第一衬底的间距大于或等于所述色阻层远离所述第一衬底的表面与所述第一衬底的间距；
所述隔档层靠近所述第一衬底的第二表面从所述第一开口与所述第一过孔的接触面向所述阵列结构层延伸。
在本申请的显示面板中，所述隔档层的第二表面与所述阵列结构层的钝化层接触。
在本申请的显示面板中，所述显示面板还包括所述第二开口，所述第二开口的第一侧靠近所述第一开口，所述第二开口的第二侧靠近相邻色阻。
本申请还提出了一种显示装置，其中，所述显示装置包括背光模组、及位于所述背光模组上的显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、及位于所述第一基板与所述第二基板之间的液晶层；
所述第一基板包括第一衬底、位于所述第一衬底上的阵列结构层、位于所述阵列结构层上的色阻层、及位于所述色阻层上的像素电极层；
所述色阻层包括至少三个色阻块，任一所述色阻块内设置有一第一开口，所述第一开口内设置有使所述像素电极层与所述阵列结构层电连接的第一过孔、以及靠近所述第一开口侧边缘设置的至少一补偿部。
在本申请的显示装置中，所述补偿部包括第一凹槽，所述第一凹槽与所述第一开口具有重叠区。
在本申请的显示装置中，
所述第一凹槽在所述第一开口上的正投影位于所述第一开口内；或者，
所述第一凹槽在所述第一开口上的正投影位于所述第一开口内，且所述第一凹槽在所述第一开口上的正投影位于与所述第一开口相邻的色阻区内。
在本申请的显示装置中，所述第一开口包括第一侧面及与所述第一侧面相邻及垂直设置的第二侧面；
在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加，在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；
所述第一截面与所述第二侧面平行，所述第一截面与所述第二侧面平行。
在本申请的显示装置中，所述第一凹槽在第一截面或第二截面的形状包括梯形、正方形或长方形中的至少一种。
在本申请的显示装置中，所述补偿部包括远离相邻所述色阻块的所述第一凹槽及靠近相邻所述色阻块的第二凹槽；
其中，所述第一凹槽在第一截面或第二截面上的截面积小于所述第二凹槽在第一截面或第二截面上的截面积。
在本申请的显示装置中，所述补偿部包括位于所述第一开口外圈的隔档层，所述隔档层与所述色阻块紧邻设置。
在本申请的显示装置中，
所述隔档层远离所述第一衬底的第一表面与所述第一衬底的间距大于或等于所述色阻层远离所述第一衬底的表面与所述第一衬底的间距；
所述隔档层靠近所述第一衬底的第二表面从所述第一开口与所述第一过孔的接触面向所述阵列结构层延伸。
在本申请的显示装置中，所述隔档层的所述第二表面与所述阵列结构层的钝化层接触。
在本申请的显示装置中，所述显示面板还包括所述第二开口，所述第二开口的第一侧靠近所述第一开口，所述第二开口的第二侧靠近相邻色阻。
 有益效果
本申请通过在靠近所述第一开口侧边缘设置的至少一补偿部，从而，在第一开口内形成像素电极层与源/漏极之间的第一过孔的时候，避免靠近所述第一开口的色阻材料流入所述第一开口内，提高了所述第一过孔与所述第一开口侧边的间距，使得所述第一开口的尺寸符合像素设计的规则，提高了产品的显示效果。
 附图说明
图1为本申请显示面板的第一种结构图；
图2为本申请显示面板的第二种结构图；
图3为本申请显示面板中阵列基板的第一种俯视结构图；
图4为图3中截面AA的剖面结构图；
图5为本申请显示面板中阵列基板的第二种俯视结构图；
图6为图5中截面AA的剖面结构图；
图7为本申请显示面板中第一开口的第一侧面的截面图；
图8为本申请显示面板中第一开口的第二侧面的截面图；
图9为本申请显示面板中阵列基板的第三种俯视结构图；
图10为本申请显示面板中阵列基板的第四种俯视结构图；
图11为图10中截面AA的剖面结构图；
图12为本申请显示面板中阵列基板的第五种俯视结构图。
 本发明的实施方式
为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
在现有COA面板的制程工艺中，由于彩色滤光层的厚度较大，在形成像素电极层与阵列结构层20的接触孔之前，需要在彩色滤光层上形成开口区。而由于彩色滤光层的材料具有一定流动性，该开口区的边缘通常会形成一定角度的斜坡，缩小了接触孔与开口区边界的间距，导致开口区的尺寸不符合像素设计的规则，影响了接触孔的形成工艺，进而影响了产品的显示效果。本申请提出了下列技术方案以解决上述技术问题。
请参阅图1~图12，本申请提出了一种显示面板400，其包括第一基板100、与所述第一基板100相对设置的第二基板200、及位于所述第一基板100与所述第二基板之间的液晶层300。
所述第一基板100包括第一衬底10、位于所述第一衬底10上的阵列结构层20、位于所述阵列结构层20上的色阻层30、及位于所述色阻层30上的像素电极层80。
所述色阻层30包括至少三个色阻块，任一所述色阻块内设置有一第一开口40，所述第一开口40内设置有使所述像素电极层80与所述阵列结构层20电连接的第一过孔207、以及靠近所述第一开口40侧边缘设置的至少一补偿部。
本申请通过在靠近所述第一开口40侧边缘设置的至少一补偿部，从而，在第一开口40内形成像素电极层80与源/漏极之间的第一过孔的时候，避免靠近所述第一开口40的色阻材料流入所述第一开口40内，提高了所述第一过孔207与所述第一开口40侧边的间距，使得所述第一开口40的尺寸符合像素设计的规则，提高了产品的显示效果。
现结合具体实施例对本申请的技术方案进行描述。
实施例一
由于本申请主要解决因色阻材料流动性而导致色阻材料流入像素电极层80与阵列结构层20的接触孔区域的技术问题，因此下文介绍的第一基板100为COA基板。
请参阅图1，所述第二基板200包括第二衬底91及位于所述第二衬底91上的第二公共电极层92。所述液晶层300位于所述像素电极层80与所述第二公共电极层92之间。
在本实施例中，所述第一衬底10及所述第二衬底91可以为刚性衬底或柔性衬底中的一种。当所述第一衬底10及所述第二衬底91为刚性衬底时，所述第一衬底10及所述第二衬底91的材料可以为玻璃、石英等材料制备。当所述第一衬底10及所述第二衬底91为柔性衬底时，所述第一衬底10及所述第二衬底91可以为聚酰亚胺等材料。而在LCD显示面板中，衬底结构一般均设置为刚性衬底，此处不对其作详细介绍。
所述阵列结构层20包括多个薄膜晶体管。所述薄膜晶体管可以为蚀刻阻挡型、背沟道蚀刻型或顶栅薄膜晶体管型等结构，具体没有限制。图1和图2中的薄膜晶体管为常规的底栅薄膜晶体管，具体结构本申请不具体介绍。
在本实施例中，所述显示面板400还包括位于所述像素电极层80与所述第二公共电极层92之间的隔垫层93。如图1所示，所述隔垫层93可以位于所述第一基板中的色阻层上。或者，如图2所示，所述隔垫层93可以位于所述第二基板上。另外，由于下文主要是讨论关于像素电极层80与源/漏极之间的连接过孔结构，因此关于隔垫层93的具体位置下文不作限定。
所述显示面板400还包括位于相邻色阻之间的遮光结构。在图1和图2的实施例中，遮光结构可以位于第一基板或者第二基板上，本文不作具体限定。
在本实施例中，所述色阻层30包括多个颜色不同的色阻块。所述色阻块可以为红色色阻块、绿色色阻块、及蓝色色阻块中的一种。
在本实施例中，所述显示面板400还包括贯穿所述色阻层30及所述钝化层206的第一过孔207，所述像素电极层80通过所述第一过孔207与所述阵列结构层20的源/漏极电连接。
在本实施例中，所述像素电极层80用于提供液晶分子偏转的第一电压，所述第二公共电极层92用于提供液晶分子偏转的第二电压。所述第二电压为恒定电压，所述显示面板400通过改变第一电压的大小以改变液晶层两侧的压差使得液晶分子呈不同角度的偏转。
在本实施例中，第二公共电极层92与所述像素电极层80的材料可以为但不限定于ITO。
在现有COA面板的制程工艺中，由于彩色滤光层的厚度较大，在形成像素电极层80与阵列结构层20之间的接触过孔之前，需要在彩色滤光层上形成开口区。请参阅图3~图4，所述色阻层30至少包括相邻设置的第一色阻块301和第二色阻块302，所述第一色阻块301与所述第二色阻块302的颜色不同。
在本实施例中，所述第一色阻块301和所述第二色阻块302内均设置有所述第一开口40，所述第一开口40内设置有所述第一过孔207。而随着面板分辨率的增加，子像素的面积逐渐减小，所述第一开口40的面积受到限制，但是为了保证面板的显示效果，所述第一开口40及所述第一过孔207需要符合一定的设计规则。
以现有8K显示面板为例，子像素内的所述第一过孔207的直径需要保证其大于8.5微米，所述第一过孔207与所述第一开口40边界的间距需要大于9微米。但是，在形成所述第一开口40时，由于色阻材料的流动性，导致色阻材料流入所述第一开口40，使得所述第一过孔207与所述第一开口40边界的间距L1不符合设计规则。因此，请参阅图3~图4，所述色阻层30还包括靠近所述第一开口40侧边缘设置的至少一补偿部。
请参阅图3~图4，图4为图3中截面AA的剖面图，图4中的薄膜晶体管以顶栅薄膜晶体管型为例进行说明。例如，该薄膜晶体管可以包括位于所述第一衬底10上的有源层201、位于所述有源层上栅绝缘层202、位于所述栅绝缘层202上的栅极层203、位于所述栅极层203上的间绝缘层204、位于所述间绝缘层204上的源漏极层205、位于所述源漏极层205上的钝化层206。
在本实施例中，所述补偿部包括第一凹槽51，所述第一凹槽51与所述第一开口40具有重叠区。
所述第一凹槽51紧邻所述第一开口40的底边缘设置。
在本实施例中，所述第一凹槽51在所述第一开口40上的正投影位于所述第一开口40区。由于所述第一开口40的边缘区域与所述色阻层30具有一定的段差，色阻材料的流动性导致色阻材料将流入所述第一开口40内。所述第一凹槽51的设置使得流入所述第一开口40内的色阻材料流入所述第一凹槽51内，使得所述第一开口40的底面平整，保证了所述第一过孔207与所述第一开口40边界的间距，使得所述第一开口40的尺寸符合像素设计的规则，避免了后续所述第一过孔207制程受所述第一开口40的影响，使得所述像素电极层80与所述阵列结构层20的正常连接。
请参阅图5~图6，图6为图5中截面AA的剖面图。所述第一凹槽51在所述第一开口40上的正投影位于所述第一开口40内，且所述第一凹槽51在所述第一开口40上的正投影位于与所述第一开口40相邻的色阻区内。图5中的虚线部分为所述第一凹槽51在所述色阻层30上的开口边界。
在本实施例中，所述第一开口40包括第一侧面401及与所述第一侧面401相邻及垂直设置的第二侧面402。所述第一凹槽51位于靠近所述第一开口40内的第一侧面401与第二侧面402的区域。所述第一侧面401与所述第二侧面402的交接区域为所述色阻材料堆积区，该顶角区域的色阻材料体积较大，因此相比非顶角区域的，该区域色阻材料的流动性较大，属于色阻材料坡度集中区域。本实施例通过将所述第一凹槽51设置在所述第一侧面401与所述第二侧面402的交接区域，使得该顶角区域的色阻材料直接流入所述第一凹槽51内，使得所述第一开口40的底面平整，保证了所述第一过孔207与所述第一开口40边界的间距，避免了后期色阻材料在顶角区域堆积而形成坡度，使得所述第一开口40的尺寸符合像素设计的规则，保证了所述第一过孔207的工艺不受所述第一开口40内色阻材料的影响，使得所述像素电极层80与所述阵列结构层20的正常连接。
请参阅图7，在远离所述第二侧面402至靠近所述第二侧面402的方向上，所述第一凹槽51在第一截面上的截面积逐渐增加。请参阅图8，在远离所述第一侧面401至靠近所述第一侧面401的方向上，所述第一凹槽51在第一截面上的截面积逐渐增加；或者，结合图7和图8，在远离所述第二侧面402至靠近所述第二侧面402的方向上，所述第一凹槽51在第一截面上的截面积逐渐增加，在远离所述第一侧面401至靠近所述第一侧面401的方向上，所述第一凹槽51在第一截面上的截面积逐渐增加。
在上述实施例中，面积的变化可以为非线性变化，总体趋势如上即可。
在本实施例中，所述第一截面与所述第二侧面402平行，所述第一截面与所述第二侧面402平行。
在上述实施例中，与图5和图6类似，所述第一侧面401与所述第二侧面402的交接区域为所述色阻材料堆积区，该顶角区域的色阻材料体积较大，因此相比非顶角区域的，该区域色阻材料的流动性较大，属于色阻材料坡度集中区域。而远离该顶角区域的色阻材料堆积量较少。因此，在上述实施例中，通过增加所述第一开口40的顶角区域对应的所述第一凹槽51的深度或者宽度等，以增加该区域色阻材料的容纳量，而远离所述第一开口40的顶角区域的所述第一凹槽51的容纳量，使得各区域堆积的色阻材料能被所述第一凹槽51容纳，即保证所述第一开口40的底面平整，又保证了所述第一过孔207与所述第一开口40边界的间距，避免了后期色阻材料在所述第一开口40边缘区域堆积而形成坡度，使得所述第一开口40的尺寸符合像素设计的规则，保证了所述第一过孔207的工艺不受所述第一开口40内色阻材料的影响，使得所述像素电极层80与所述阵列结构层20的正常连接。
在上述实施例中，所述第一凹槽51在第一截面或第二截面的形状包括梯形、正方形或长方形中的至少一种。
例如图3所示的结构，为了保证所述第一凹槽51的开口不至于过大，所述第一凹槽51在第一截面或第二截面的形状可以为梯形，在不增加第一凹槽51开口面积前提下，增加了第一凹槽51内部的容量，避免色阻材料在第一凹槽51对应的区域形成凸起。
在上述实施例的基础上，请参阅图9，所述补偿部包括远离相邻所述色阻块的所述第一凹槽51及靠近相邻所述色阻块的第二凹槽52。
在本实施例中，所述第一凹槽51在第一截面或第二截面上的截面积小于所述第二凹槽52在第一截面或第二截面上的截面积。
请参阅图3和图5，对于COA基板，相邻色阻块之间，一般存在一定的缝隙，例如所述第一色阻块301与所述第二色阻块302之间的缝隙。而为了保证上述第一过孔207制程工艺的顺利，在所述第一开口40靠近相邻色阻的区域设置了所述第二开口42。因此，在完成所述第一开口40及所述第二开口42的工艺时，由于色阻材料的流动性，位于靠近所述第二开口42附近的色阻材料易通过所述第一色阻块301与所述第二色阻块302之间的缝隙流入所述显示面板400的显示区域，所述第一色阻块301上的色阻材料可能会流向所述第二色阻块302的显示区，导致显示面板400出现混色的技术问题。
实施例二
本实施例与实施例一相同或相似，不同之处在于：
在本实施例的显示面板400中，所述补偿部包括位于所述第一开口40外圈的隔档层60，所述隔档层60与所述色阻块紧邻设置。
请参阅图10~图11，图11为图10中截面AA的剖面图。与实施例一相比，本实施例中的所述补偿部为一隔档结构。所述隔档层60位于所述色阻层30内、以及靠近所述第一开口40设置。由于所述第一开口40的边缘区域与所述色阻层30具有一定的段差，色阻材料的流动性导致色阻材料将流入所述第一开口40内，而本实施例通过所述隔档层60的设置，阻挡了色阻材料流入所述第一开口40内，使得所述第一开口40的底面平整，保证了所述第一过孔207与所述第一开口40边界的间距，使得所述第一开口40的尺寸符合像素设计的规则，避免了后续所述第一过孔207制程受所述第一开口40的影响，使得所述像素电极层80与所述阵列结构层20的正常连接。
在本实施例中，所述隔档层60远离所述第一衬底10的第一表面601与所述第一衬底10的间距大于或等于所述色阻层30远离所述第一衬底10的表面与所述第一衬底10的间距。本实施例通过增加所述隔挡层的高度，使得所述隔档层60的竖直高度大于所述色阻层30的竖直高度，进一步避免了靠近所述第一开口40的色阻材料流入所述第一开口40。
在本实施例中，所述隔档层60靠近所述第一衬底10的第二表面602从所述第一开口40与所述第一过孔207的接触面向所述阵列结构层20延伸。
请参阅图11，所述隔档层60的底面超过所述第一开口40的底面、以及向所述阵列结构层20延伸。由于色阻材料的流动性，所述隔档层60即使将色阻层30的上层结构阻挡，其可以通过挤压从隔挡层的下方侵入所述第一开口40内。而本申请通过将所述隔档层60向所述阵列结构层20延伸，进一步避免了所述色阻材料流向所述第一开口40内。
在本申请的一种实施例中，所述隔档层60的第二表面602与所述阵列结构层的钝化层206接触。所述隔档层60形成于所述阵列结构层20上。在形成阵列结构层20的工艺时，可以先形成所述隔档层60。本实施例隔档层60的设置可以完全避免色阻材料的侵入。
实施例三
本实施例与实施例一、实施例二相同或相似，例如以在实施例一的基础上，不同之处在于：
由于相邻色阻块之间存在间隙，为了避免因色阻的流动性而导致靠近相邻色阻区域的色阻材料从该间隙中流入显示区的技术问题，本申请上述实施例中均在该第二开口对应的区域保留了第一凸起的结构，以阻挡色阻材料从第二开口流入间隙中。其中，由于所述第一凸起同样存在色阻材料流动的技术问题，以在该区域形成坡度，减小了所述第一过孔与所述第一开口边界的间距，使得所述第一开口的尺寸不符合像素设计的规则。
请参阅图12，所述补偿部还可以包括位于所述第一凸起70上的第三凹槽53。所述第三凹槽53用于将所述第一凸起70朝向所述第一过孔207的部分区域去除，减小了所述第一凸起70与所述第一过孔207圆心的间距。
在本实施例中，在所述显示面板400的俯视图方向，所述第三凹槽53可以为一三角形，即立体结构为三棱柱，使得所述第一凸起70朝向所述第一过孔207的第三表面403为一平面。
本实施例通过在所述第一凸起70朝向所述第一过孔207的区域设置所述第三凹槽53，去除了部分所述第一凸起70上的色阻材料，减小了所述第一凸起70与所述第一过孔207的间距，保证了使得所述第一开口40的尺寸符合像素设计的规则，避免了后续所述第一过孔207制程受所述第一开口40的影响，使得所述像素电极层80与所述阵列结构层20的正常连接。
另外，所述第三凹槽53的出现，使得所述第一凸起70与所述第一侧面403之间的区域由矩形结构变成梯形结构，增加了该区域的色阻容纳量，进一步避免了色阻的从所述第二开口42的外溢。
在本实施例中，所述第三表面403还可以为一弧面结构，例如所述第三表面403为外凸的曲面或者为内凹曲面。
其中，本实施例的所述第三凹槽53可以应用上述任一实施例中，不限定于图12的结构。
在本申请上述俯视结构图中，为了将第一开口的位置表征清楚，因此将位于第一开口内部色阻材料下方的薄膜晶体管结构以阴影结构表示，但是在实际产品中，薄膜晶体管是被色阻材料所阻挡而无法在俯视结构图中的可视。
申请还提出了一种显示装置，其中，所述显示装置包括背光模组、及位于所述背光模组上的上述显示面板。本实施例中的所述显示装置的工作原理与上述显示面板的工作原理相同或相似，此处不再赘述。
本申请提出了一种显示面板及显示装置，其包括第一基板、第二基板、及位于所述第一基板与所述第二基板之间的液晶层；所述第一基板包括第一衬底、阵列结构层、位于所述阵列结构层上的色阻层、及位于所述色阻层上的像素电极层；所述色阻层包括至少三个色阻块，任一所述色阻块内设置有一第一开口，所述第一开口内设置有使所述像素电极层与所述阵列结构层电连接的第一过孔。本申请通过在靠近所述第一开口侧边缘设置的至少一补偿部，从而，在第一开口内形成像素电极层与源/漏极之间的第一过孔的时候，避免靠近所述第一开口的色阻材料流入所述第一开口内，提高了所述第一过孔与所述第一开口侧边的间距，使得所述第一开口的尺寸符合像素设计的规则，提高了产品的显示效果。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (20)

  1. 一种显示面板，其中，包括第一基板、与所述第一基板相对设置的第二基板、及位于所述第一基板与所述第二基板之间的液晶层；
    所述第一基板包括第一衬底、位于所述第一衬底上的阵列结构层、位于所述阵列结构层上的色阻层、及位于所述色阻层上的像素电极层；
    所述色阻层包括至少三个色阻块，任一所述色阻块内设置有一第一开口，所述第一开口内设置有使所述像素电极层与所述阵列结构层电连接的第一过孔、以及靠近所述第一开口侧边缘设置的至少一补偿部。
  2. 根据权利要求1所述的显示面板，其中，所述补偿部包括第一凹槽，所述第一凹槽与所述第一开口具有重叠区。
  3. 根据权利要求2所述的显示面板，其中，
    所述第一凹槽在所述第一开口上的正投影位于所述第一开口内；或者，
    所述第一凹槽在所述第一开口上的正投影位于所述第一开口内，且所述第一凹槽在所述第一开口上的正投影位于与所述第一开口相邻的色阻区内。
  4. 根据权利要求3所述的显示面板，其中，所述第一开口包括第一侧面及与所述第一侧面相邻及垂直设置的第二侧面；
    在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
    在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
    在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加，在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；
    所述第一截面与所述第二侧面平行，所述第一截面与所述第二侧面平行。
  5. 根据权利要求3所述的显示面板，其中，所述第一凹槽在第一截面或第二截面的形状包括梯形、正方形或长方形中的至少一种。
  6. 根据权利要求3所述的显示面板，其中，所述补偿部包括远离相邻所述色阻块的所述第一凹槽及靠近相邻所述色阻块的第二凹槽；
    其中，所述第一凹槽在第一截面或第二截面上的截面积小于所述第二凹槽在第一截面或第二截面上的截面积。
  7. 根据权利要求1所述的显示面板，其中，所述补偿部包括位于所述第一开口外圈的隔档层，所述隔档层与所述色阻块紧邻设置。
  8. 根据权利要求7所述的显示面板，其中，
    所述隔档层远离所述第一衬底的第一表面与所述第一衬底的间距大于或等于所述色阻层远离所述第一衬底的表面与所述第一衬底的间距；
    所述隔档层靠近所述第一衬底的第二表面从所述第一开口与所述第一过孔的接触面向所述阵列结构层延伸。
  9. 根据权利要求8所述的显示面板，其中，
    所述隔档层的所述第二表面与所述阵列结构层的钝化层接触。
  10. 根据权利要求1所述的显示面板，其中，所述显示面板还包括所述第二开口，所述第二开口的第一侧靠近所述第一开口，所述第二开口的第二侧靠近相邻色阻。
  11. 一种显示装置，其中，所述显示装置包括背光模组、及位于所述背光模组上的显示面板，所述显示面板包括第一基板、与所述第一基板相对设置的第二基板、及位于所述第一基板与所述第二基板之间的液晶层；
    所述第一基板包括第一衬底、位于所述第一衬底上的阵列结构层、位于所述阵列结构层上的色阻层、及位于所述色阻层上的像素电极层；
    所述色阻层包括至少三个色阻块，任一所述色阻块内设置有一第一开口，所述第一开口内设置有使所述像素电极层与所述阵列结构层电连接的第一过孔、以及靠近所述第一开口侧边缘设置的至少一补偿部。
  12. 根据权利要求11所述的显示装置，其中，所述补偿部包括第一凹槽，所述第一凹槽与所述第一开口具有重叠区。
  13. 根据权利要求12所述的显示装置，其中，
    所述第一凹槽在所述第一开口上的正投影位于所述第一开口内；或者，
    所述第一凹槽在所述第一开口上的正投影位于所述第一开口内，且所述第一凹槽在所述第一开口上的正投影位于与所述第一开口相邻的色阻区内。
  14. 根据权利要求13所述的显示装置，其中，所述第一开口包括第一侧面及与所述第一侧面相邻及垂直设置的第二侧面；
    在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
    在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；或者，
    在远离所述第二侧面至靠近所述第二侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加，在远离所述第一侧面至靠近所述第一侧面的方向上，所述第一凹槽在第一截面上的截面积逐渐增加；
    所述第一截面与所述第二侧面平行，所述第一截面与所述第二侧面平行。
  15. 根据权利要求13所述的显示装置，其中，所述第一凹槽在第一截面或第二截面的形状包括梯形、正方形或长方形中的至少一种。
  16. 根据权利要求13所述的显示装置，其中，所述补偿部包括远离相邻所述色阻块的所述第一凹槽及靠近相邻所述色阻块的第二凹槽；
    其中，所述第一凹槽在第一截面或第二截面上的截面积小于所述第二凹槽在第一截面或第二截面上的截面积。
  17. 根据权利要求11所述的显示装置，其中，所述补偿部包括位于所述第一开口外圈的隔档层，所述隔档层与所述色阻块紧邻设置。
  18. 根据权利要求17所述的显示装置，其中，
    所述隔档层远离所述第一衬底的第一表面与所述第一衬底的间距大于或等于所述色阻层远离所述第一衬底的表面与所述第一衬底的间距；
    所述隔档层靠近所述第一衬底的第二表面从所述第一开口与所述第一过孔的接触面向所述阵列结构层延伸。
  19. 根据权利要求18所述的显示装置，其中，
    所述隔档层的所述第二表面与所述阵列结构层的钝化层接触。
  20. 根据权利要求11所述的显示装置，其中，所述显示面板还包括所述第二开口，所述第二开口的第一侧靠近所述第一开口，所述第二开口的第二侧靠近相邻色阻。
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