WO2021189288A1 - Dispositif d'affichage et équipement d'affichage - Google Patents

Dispositif d'affichage et équipement d'affichage Download PDF

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Publication number
WO2021189288A1
WO2021189288A1 PCT/CN2020/081068 CN2020081068W WO2021189288A1 WO 2021189288 A1 WO2021189288 A1 WO 2021189288A1 CN 2020081068 W CN2020081068 W CN 2020081068W WO 2021189288 A1 WO2021189288 A1 WO 2021189288A1
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Prior art keywords
display device
black
oled
light emitting
organic light
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PCT/CN2020/081068
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English (en)
Inventor
Yasunori Kijima
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Huawei Technologies Co., Ltd.
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Priority to JP2022557699A priority Critical patent/JP2023518514A/ja
Priority to KR1020227036537A priority patent/KR20220157459A/ko
Priority to CN202080077910.3A priority patent/CN114651333A/zh
Priority to PCT/CN2020/081068 priority patent/WO2021189288A1/fr
Publication of WO2021189288A1 publication Critical patent/WO2021189288A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes

Definitions

  • the present disclosure relates to display devices, and more particularly to display devices that each have an organic light emitting layer and are arranged in a matrix form to constitute a display equipment.
  • a display equipment including a plurality of pixels which are display devices having organic light emitting diodes (OLED) , and a polarizer is mounted in order to obtain high contrast. Since the polarizer diminishes about 60%of the OLED output, therefore, the power consumption of the display device becomes high to obtain a given amount of light. The increase in power consumption shortens the lifetime of the OLED.
  • OLED organic light emitting diodes
  • the polyimide substrate used in a top emission type OLED has a surface reflectance of about 10%or more, and when the anode electrode made of silver (or a silver alloy) is used to increase the external quantum efficiency (EQE) , the OLED has a surface reflectance of about 90%or more. Therefore, an OLED display device without a polarizer has a high reflectance, and suffers from a significantly lowered visibility, particularly under sunlight.
  • a light shielding film is provided in contact with the anode electrode, or a light shielding film is used for a partition wall (PDL: pixel defining layer) defining an OLED (refer to, for example, Patent Literatures 1 to 3) .
  • PDL partition wall
  • OLED organic light emitting diode
  • the aperture ratio of OLEDs of individual RGB colors is 40%
  • the surface reflectance of the polyimide substrate is 10%
  • the reflectance of the anode electrode is 90%
  • the average surface reflectance is calculated to be about 45%.
  • the provision of the light shielding film reduces the surface reflectance of the polyimide substrate by about 5%or more, and reduces the average surface reflectance to about 35%, it could be seen that an enhancement of the average surface reflectance is about 10%.
  • the reflectance is still high for practical display devices, and the polarizer is practically needed.
  • the polarizer is stilled needed to reduce the reflectance. Since the polarizer is generally rigid, and is fragile to bending, the orientation of the liquid crystal molecules will be influenced, so that the polarizer cannot be applied to a bendable display equipment.
  • one embodiment of the present disclosure is characterized in that a display device in which organic light emitting diodes (OLEDs) each having an anode, an organic light emitting layer, and a cathode fabricated on a substrate are integrated includes: a partition wall made of a black material surrounding the organic light emitting diode; and an optical film covering the organic light emitting diode and the partition wall.
  • OLEDs organic light emitting diodes
  • combining the black partition wall with the optical film having a polarized efficiency lying within a predetermined range can reduce the average surface reflectance of an OLED display device, and may bring about an expected effect of enhancing the EQE, thus making it possible to suppress diminishing of light of the OLED output.
  • the partition wall have a surface resistivity of 10 14 ⁇ /cm 2 or higher and a volume resistivity of 10 14 ⁇ /cm 2 or higher.
  • This embodiment can suppress the leak current to thereby reduce the surface reflection with a high optical density.
  • the partition wall have an optical density of 1.0 or more.
  • This embodiment can reduce light leakage to adjacent OLEDs.
  • the optical film can be a polarization film with a polarized efficiency of 60 to 90%.
  • This embodiment can satisfy the requirements for application to an OLED display device, that is, the surface reflectance being 12.5%or less and the EQE enhancement expectation rate being 10%or more.
  • the optical film can be an ND filter with an optical density of 0.15 to 0.26.
  • This embodiment can satisfy the requirements for application to an OLED display device, that is, the surface reflectance being 12.5%or less and the EQE enhancement expectation rate being 10%or more.
  • Another part on the substrate than the partition wall (PDL) surrounding the organic light emitting diode is covered with the black material, and an opening is formed in a portion of the covered another part.
  • This embodiment can provide an OLED which has a high transmittance and a contrast improved by the black PDL.
  • Fig. 1 is a diagram showing the configuration of an OLED according to an embodiment of the present disclosure
  • Fig. 2 is a diagram showing a pixel structure of a display device using the OLED of this embodiment
  • FIG. 3 is a diagram showing the configuration of a conventional polyimide PDL
  • Fig. 4 is a diagram showing the configuration of a black PDL according to the present embodiment
  • Fig. 5 is a diagram showing one example of the relationship between the optical density and the surface reflectance of a PDL
  • FIG. 6 is a diagram showing the structure of an optical film applied to the OLED of the present embodiment
  • Fig. 7 is a diagram showing an example of the characteristics of an LPE film of the present embodiment
  • Fig. 8 is a diagram showing the output spectrum of a display device using the OLED of this embodiment.
  • Fig. 9 is a diagram showing an OLED-output enhancement effect demonstrated by the LPE film of this embodiment with respect to the conventional polarizer.
  • Fig. 10 is a diagram showing an example of the characteristics of an ND filter of the present embodiment.
  • Fig. 1 is a diagram showing the configuration of an OLED according to one embodiment of the present disclosure.
  • Fig. 1 is a cross-sectional view of an OLED 100 with the emission direction of the OLED 100 (the display surface of the OLED display device) being the top side in the figure, and schematically showing the layer structure.
  • the OLED 100 has a back side barrier 110, a substrate 121, a backplane 122, a frontplane 130, and a Thin Film Encapsulation (TFE) 140 stacked in order.
  • TFE Thin Film Encapsulation
  • the back side barrier 110 has a first inorganic barrier layer 111 of silicon nitride (SiN x ) , silicon nitride oxide (SiN x O y ) , or silicon oxide (SiO x ) or the like, an organic barrier layer 112 of an organic resin, and a second inorganic barrier layer 113 of SiN x or SiO x stacked in order, and prevents invasion of O 2 and H 2 O from the opposite side in the emission direction, that is, the back side.
  • a first inorganic barrier layer 111 of silicon nitride (SiN x ) silicon nitride oxide (SiN x O y ) , or silicon oxide (SiO x ) or the like
  • an organic barrier layer 112 of an organic resin and a second inorganic barrier layer 113 of SiN x or SiO x stacked in order, and prevents invasion of O 2 and H 2 O from the opposite side in the emission direction, that is,
  • the backplane 122 on the substrate 121 has a driving circuit of thin film transistors (TFTs) buried directly under respective pixels to apply a voltage or current to selected pixels to individually operate the pixels.
  • TFTs thin film transistors
  • the TFTs and wirings on the substrate 121 buried with a resin so that the backplane 122 is planarized.
  • the frontplane 130 has an anode 131, light emitting layers including a hole injection layer (HIL) 132, a hole transport layer (HTL) 133, an organic light emitting layer (EML) 134, a hole block layer (HBL) 135, an electron transport layer (ETL) 136, and a cathode 137 stacked in order.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML organic light emitting layer
  • HBL hole block layer
  • ETL electron transport layer
  • cathode 137 cathode
  • the TFE 140 has a first inorganic barrier layer 141 of SiN x /SiO x with a thickness of about 0.5 to 1 ⁇ m, an organic barrier layer 142 with a thickness of about 7.5 to 15 ⁇ m, and a second inorganic barrier layer 143 of SiN x /SiO x with a thickness of about 0.5 to 1 ⁇ m stacked in order.
  • the thicknesses of the individual layers constituting the TFE 140 can be optionally set according to suitable light extraction conditions on the optical design as well as the fabricated structure of the OLED formed under the TFE 140, and are not uniquely determined but are determined by the panel design of the OLED display device.
  • the TFE 140 prevents invasion of O 2 and H 2 O from the display surface of the OLED display device.
  • the OLED 100 is a top-emission type OLED which extracts, from the cathode 137 side opposite to the substrate 121, light generated when holes injected from the anode 131 and electrons injected from the cathode 137 recombine in the organic light emitting layer 134.
  • the substrate 121 is a supporting body in which a plurality of OLEDs 100 are disposed and formed on the top surface; for example, a film, a sheet or the like made of quartz, glass, a metallic foil, or a resin is used.
  • polyesters such as polybutylene naphthalate (PBN) or the like, methacrylic resins typified by polymethylmethacrylate (PMMA) , polyethylene terephthalate (PET) , polyethylene naphthalate (PEN) , polyimide, polyamide (PA) , or polycarbonate resins or the like are available as the material for the substrate 121.
  • the anode 131 could be made of an electrode material which has a large work function from a vacuum level.
  • an electrode material could be made of a single metal or an alloy, such as chromium (Cr) , gold (Au) , platinum (Pt) , nickel (Ni) , copper (Cu) , tungsten (W) , or silver (Ag) .
  • the anode 131 may have a sputtered or evaporated structure of a metallic layer made of the above single metal or alloy, and a transparent conductive layer made of an alloy or the like of indium tin oxide (ITO) , indium zinc oxide (InZnO) , or zinc oxide (ZnO) and aluminum (Al) .
  • ITO indium tin oxide
  • InZnO indium zinc oxide
  • ZnO zinc oxide
  • Al aluminum
  • an electrode of the OLED 100 having a high reflectivity is used as the anode 131, whereby the efficiency of extracting light to the outside is enhanced due to the interference effect and the high reflectivity effect.
  • the anode 131 uses a sputtered or evaporated structure of a first layer which is excellent in light reflecting property, and a second layer which is provided on an upper portion of the first layer and which has light permeability and a large work function.
  • the first layer could be made of an alloy mainly containing Al or Ag as a principal component that have high reflectance, and also contains, as an accessary component, a material which has a relatively smaller work function than that of Al serving as the principal component.
  • any of lanthanoid series materials could be used as such an accessary component. Although the work function of any lanthanoid series material is not large, any of these materials when contained in accessary component increases the stability of the anode 131 and fulfills the hole injection property of the anode 131.
  • a material such as silicon (Si) or copper (Cu) may also be used as the accessary component of the first layer.
  • the second layer can be made of an oxide of an Al alloy, an oxide of molybdenum (Mo) , an oxide of zirconium (Zr) , an oxide of chromium (Cr) , or an oxide of tantalum (Ta) .
  • Mo molybdenum
  • Zr zirconium
  • Cr chromium
  • Ta tantalum
  • the second layer is composed of an oxide layer (including a natural oxide film) of an Al alloy containing any of the lanthanoid series materials as an accessary component, since the oxide of any lanthanoid series material has high transmittance, the transmittance of the second layer containing the oxide of any lanthanoid series material as the accessary component is excellent. As a result, the reflectivity on the surface of the first layer is kept high.
  • the use of a transparent conductive layer made of ITO or the like in the second layer enhances the electron injection property of the anode 131. It is to be noted that since ITO or the like has a large work function, the use of the ITO or the like on the side contacting the substrate 121, that is, in the first layer, can enhance the carrier injection efficiency, and can also enhance the adhesion between the anode 131 and the substrate 121.
  • each pixel part is patterned with a pixel defining layer (PDL) to connect the anode 131 to a TFT for driving after the formation of the anode 131.
  • PDL pixel defining layer
  • the HIL 132, the HTL 133, the EML 134, the HBL 135, and the ETL 136 included in the light emitting layers are organic layers.
  • Those organic layers are composed of materials to be described later in addition to an acrylic compound and hexamethyldisiloxane (HMDSO) .
  • the organic layers are formed by, for example, an inkjet printer or the like. Although the thicknesses, composing materials, etc. of the individual layers composing the organic layer are not particularly limited, some examples thereof will be described below.
  • the HIL 132 is a buffer layer for enhancing the efficiency of injecting holes into the EML 134, and preventing generation of a leak current.
  • the thickness of the HIL 132 is set in the range of 5 to 200 nm, more preferably in the range of 8 to 150 nm.
  • the material for the HIL 132 may be adequately selected in relation to the materials for the electrodes and the adjacent layer.
  • Examples of the materials include polyaniline and a derivative thereof, polythiophene and a derivative thereof, polypyrrole and a derivative thereof, polyphenylenevinylene and a derivative thereof, polythienylenevinylene and a derivative thereof, polyquinoline and a derivative thereof, polyquinoxaline and a derivative thereof, a conductive high-molecular material such as polymer containing an aromatic amine structure in a main chain or side chain thereof, metal phthalocyanine (such as copper phthalocyanine) , and carbon.
  • a conductive high-molecular material include oligoaniline and polydioxythiophene such as poly (3, 4-ethylenedioxythiophene) (PEDOT) .
  • the HTL 133 is an organic layer to enhance the efficiency of transporting holes to the EML 134.
  • the thickness of the HTL 133 which depends on the entire device structure, could be set, for example, in the range of 5 to 200 nm.
  • the thickness of the HTL 133 could be in the range of 8 to 150 nm.
  • a luminescent material which is soluble into an organic solvent for example, polyvinylcarbazole and a derivative thereof, polyfluorene and a derivative thereof, polyaniline and a derivative thereof, polysilane and a derivative thereof, a polysiloxane derivative having aromatic amine in a side chain or main chain thereof, polythiophene and a derivative thereof, polypyrrole, a triphenylamine derivative or the like can be used as the material for the HTL 133.
  • the application of an electric field recombines electrons with holes to emit light.
  • the thickness of the EML 134 which depends on the entire device structure, could be set, for example, in the range of 10 to 200 nm.
  • the thickness of the EML 134 could be in the range of 20 to 150 nm.
  • the EML 134 may have either a single layer structure or a multilayer structure.
  • the material used for the EML 134 should be selected according to a corresponding emission color; for example, available materials for the EML 134 include a (poly) paraphenylenevinylene derivative, a polyfluorene polymer derivative, a polyphenylene derivative, a polyvinylcarbazole derivative, a polythiophene derivative, a perylene pigment, a coumarin pigment, a rhodamine pigment, a triphenylamine derivative and a material which is obtained by doping the high-molecular materials mentioned above with an organic EL material.
  • available materials for the EML 134 include a (poly) paraphenylenevinylene derivative, a polyfluorene polymer derivative, a polyphenylene derivative, a polyvinylcarbazole derivative, a polythiophene derivative, a perylene pigment, a coumarin pigment, a rhodamine pigment, a triphenylamine derivative and a material which is obtained by doping
  • the material for the EML 134 may be obtained by mixing two or more kinds of the above-mentioned materials.
  • the material for the organic light emitting layer 134 is not limited to the above-mentioned high-molecular materials, and may be a combination of low-molecular materials.
  • Examples of such a low-molecular material include anthracene, benzine, styrylamine, triphenylamine, porphyrin, triphenylene, azatriphenylene, tetracyanoquinodimethane, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, fluorenone, hydrazone, stilbene, triphenylamine derivatives of the aforementioned materials, and heterocyclic conjugate monomer or oligomer of a polysilane compound, a vinylcarbazole compound, a thiophene compound, an aniline compound or the like.
  • a material having a high luminous efficiency as a luminescence guest material for example, an organic luminescent material such as a low-molecular fluorescent material, a phosphorescent pigment or a metallic complex is available as the material for the EML 134.
  • the EML 134 may be, for example, an organic light emitting layer having a hole transport property and serving as the HTL 133 as well as an organic light emitting layer having an electron transport property and serving as the ETL 136 to be described later.
  • the HBL 135 serves to inhibit the inflow of the holes into the cathode 137, and may be made of, for example, BCP (BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline) .
  • the thickness of the HBL 135 may be set, for example, in the range of 0.1 to 100 nm.
  • the ETL 136 is an organic layer to enhance the efficiency of transporting electrons to the EML 134.
  • the thickness of the ETL 136 which depends on the entire device structure, could be set, for example, in the range of 5 to 200 nm. Optionally, the thickness of the ETL 136 could be in the range of 10 to 180 nm.
  • An organic material having an excellent electron transporting ability is preferably used as the material for the ETL 136.
  • the enhancement of the efficiency of transporting electrons to the EML 134 suppresses a change in an emission color due to an electric field strength which will be described later. Specifically, for example, an arylpyridine derivative, a benzimidazole derivative or the like is preferably used.
  • Such an organic material include an alkaline metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof, an alkaline earth metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof, and a rare earth metal and an oxide thereof, a composite oxide thereof, a fluoride thereof, and a carbonate thereof.
  • the ETL 136 has an electron donor property; for example, electron transport materials which are doped with an n-type dopant, specifically, the above-mentioned materials for the ETL 136 can be used.
  • the n-type doping material include an alkaline metal or an oxide thereof, a composite oxide thereof, a fluoride thereof, and an organic complex thereof, and an alkaline earth metal or an oxide thereof, a composite oxide thereof, a fluoride thereof, and an organic complex thereof.
  • materials each of which is low in electronegativity and is excellent in electron donor property may be available. Of these materials, those materials which are small in light absorption in the visible light region in a film status are preferable.
  • metallic materials with low electronegativity such as alkaline metals like Li, Na, K, Rb and Cs, alkaline earth metals like Be, Mg, Ca, Sr, Ba and Ra, or lanthanide metals like Sm, Yb, Ga and La are examples of such materials.
  • the cathode 137 is made of, for example, a material which is about 10 nm thick and excellent in light permeability and which has a small work function. In addition, even the formation of a transparent conductive film using an oxide can guarantee light extraction. In this case, ZnO, ITO, InZnO, InSnZnO and the like are available. Furthermore, although the cathode 137 may be a single layer, the cathode 137 may also have a structure in which a plurality of layers are sequentially stacked from the anode 131 side.
  • the cathode 137 may also be composed of a mixed layer containing an organic light emitting material such as an aluminium quinoline complex, a styrylamine derivative or a phthalocyanine derivative.
  • the cathode 137 may further have an Al-Li layer or an Mg-Ag layer.
  • the cathode 137 should take the optimal combination and the optimal multilayer structure according to configuration of the device to be prepared.
  • Fig. 2 shows the pixel structure of a display device using the OLED of this embodiment.
  • Fig. 2 shows one pixel in which OLEDs of individual RGB colors are integrated.
  • the frontplane 130 is formed on the backplane 122, and PDLs 180a to 180d are patterned to define frontplanes 130a to 130c for the individual RGB colors.
  • the anode 131 of the frontplane 130 is connected to the wiring in the backplane 122.
  • the TFE 140 (first inorganic barrier layer 141, organic barrier layer 142, and inorganic barrier layer 143) is stacked so as to cover the frontplanes 130a to 130c and the PDL 180a to 180d, thereby sealing the OLED. Furthermore, an optical film 160 of the present embodiment described below is stacked via an adhesive layer 150.
  • the conventional polyimide PDL is replaced with a black PDL, and the black PDL directly absorbs ambient light from the outside (Ain Fig. 2) , or absorbs part of the light reflected by the anode 131 (B in Fig. 2) . Furthermore, leak light from an adjacent OLED can also be absorbed (C in Fig. 2) .
  • the conventional polyimide PDL with a black PDL therefore the surface reflection can be suppressed at a high optical density (OD) .
  • the leak current can be suppressed by the black PDL as described later.
  • Fig. 3 shows the configuration of a conventional polyimide PDL.
  • Fig. 4 shows the configuration of the black PDL according to the present embodiment.
  • the material for the black PDL is patterned and an opening is formed in a portion of another part than the black PDL surrounding the OLED of a pixel 211, for example, a region such as a part 212 where the TFTs and wirings of the backplane 122 are buried.
  • This can provide an OLED which has a high transmittance and a contrast improved by the black PDL.
  • the OLED can be made transparent, so that a sensor or a camera can be installed at a lower portion of the OLED display device.
  • the black material has disadvantages such that leak currents are generated from adjacent pixels due to the low resistivity of the black material, and dust is generated from carbon particles added to provide conductivity, which may cause defects.
  • the surface resistivity (sheet resistance) of black materials such as carbon is about 10 16 ⁇ /cm 2 or less.
  • the surface resistivity of the PDL of the OLED need over 10 14 ⁇ /cm 2 .
  • the volume resistivity (electrical resistivity, specific resistance) of the black material is about 10 16 ⁇ /cm or less. In the OLED, 10 14 ⁇ /cm or more is sufficient, from which the volume resistivity is sufficient.
  • a specific example of the black material includes carbon black, acetylene black, lamp black, manganese ferrite, or at least one of an acrylic group-containing resin, a polyimide group-containing resin, a silicone group-containing resin, a fluorine group-containing resin, a urethane group-containing resin, and an epoxy group-containing resin.
  • Materials including at least one black coloring material of manganese ferrite, bone black, graphite, iron black, aniline black, cyanine black, titanium black, aniline black or iron oxide black pigment could be used as black materials.
  • the base material for the black material includes an acrylic group-containing resin, a polyimide group-containing resin, a silicone group-containing resin, a fluorine group-containing resin, a urethane group-containing resin, an epoxy group-containing resin, etc. It is preferable to use a mixture in which two or more resins are combined as a base material. Furthermore, a black coloring material to be mixed with the base material may be used as the black material. Examples of the black coloring materials include manganese ferrite, carbon black, acetylene black, lamp black, bone black, graphite, iron black, aniline black, cyanine black, titanium black, aniline black and iron oxide black pigment.
  • the coloring substance mixed in the aforementioned base material may be not only the aforementioned black substance, but also a mixture in which a coloring substance of a different color having the light shielding property equivalent to that of the black substance.
  • such coloring substance include Victoria Pure Blue (42595) , Auramine O (41000) , Cachiron Brilliant Flavin (Basic 13) , Rhodamine 6 GCP (45160) , Rhodamine B (45170) , Safranin OK 70: 100 (50240) , Elio Grausin X (42080) , No.
  • adaptable CI color index
  • adaptable CI include C.I.I. Yellow pigments 20, 24, 86, 93, 109, 110, 117, 125, 137, 138, 147, 148, 150, 153, 154, 166, C.I.I.
  • the optical density (OD) as an index for specifying the PDL is a logarithmic expression of the opacity of the medium, and has the following relationship with the transmittance T.
  • T is small when OD is large.
  • Fig. 5 shows one example of the relationship between the (OD) of the PDL and the surface reflectance.
  • the surface reflectance is saturated at 6%.
  • the surface reflectance is an optical parameter that is determined by the general configuration, and the absolute value of the surface reflectance is not saturated at 6%; however, the saturation tendency for the OD shows such a relative relation due to the definition of the OD regardless of which configuration is taken. Accordingly, the PDL of the present embodiment can reduce light leakage to adjacent OLEDs by using a material having an OD of 1 or greater.
  • a high OD optical film may be attached to the display surface of the OLED display device.
  • CF color filter
  • an electrode material having a low reflectivity may be used for the anode 131, the efficiency is reduced in the top-emission type OLED, and the microcavity effect is also reduced at a low reflectivity.
  • an optical film 160 that reduces the surface reflectance is added in this embodiment.
  • the polarized efficiency (PE) be high; for example, it is desirable that the PE is closer to 100%.
  • the average surface reflectance of an OLED display device can be set to 10%or less.
  • Fig. 6 is a cross-sectional view of the OLED 100 with the emission direction of the OLED 100 (the display surface of the OLED display device) being the top side in the figure, and the optical film 160 includes a protective layer (TAC) 161 with a thickness of about 25 ⁇ m, a polarizing coating 162 with a thickness of about 4 ⁇ m, an adhesive layer (PSA) 163 with a thickness of about 5 ⁇ m, a quarter wavelength plate 164 with a thickness of about 2 ⁇ m, and an adhesive layer (PSA) 165 with a thickness of about 15 ⁇ m in order from the top.
  • TAC protective layer
  • PSA adhesive layer
  • PSA adhesive layer
  • Example 1 a liquid crystal polarizer with a so-called liquid crystal coating is used as an example, and a polarization film having
  • Fig. 7 shows an example of the characteristics of the LPE film of this embodiment.
  • the solid line represents an EQE enhancement expectation rate provided by an optical film having a low PE, which is shown on the left vertical scale, and the broken line represents a surface reflectance, which is shown on the right vertical scale.
  • the PE of the optical film 160 falls within the range of 65 to 80%.
  • the PE of the optical film 160 falls within the range of 60 to 90%.
  • Fig. 8 shows the output spectrum of a display device using the OLED of this embodiment. It is the output spectrum of the OLED display device provided with an OLED for each RGB color.
  • Fig. 9 shows the OLED-output enhancement effect brought about by the LPE film of this embodiment against the conventional polarizer. It turns out that the LPE film of this embodiment has enhanced the EQE and has increased the OLED output over the whole visible light region.
  • an iodine polarizer in which iodine compound molecules are adsorbed and aligned in polyvinyl alcohol (PVA) can also be used. Adjustment of the iodine concentration makes it possible to obtain a PE lying in a predetermined range in which the surface reflectance is 10%or less.
  • ND Neutral Density
  • Fig. 10 shows the characteristics of a Neutral Density (ND) filter added to the OLED of this embodiment.
  • the solid line represents an EQE enhancement expectation rate provided by an optical film having a low PE, which is shown on the left vertical scale, and the broken line represents a surface reflectance which is shown on the right vertical scale.
  • the transmittance of the ND filter falls within the range of 60 to 65%.
  • the OD of the ND filter is 0.22 to 0.18.
  • the transmittance of the ND filter lies within the range of 55 to 70%, and the OD becomes 0.26 to 0.15.
  • the ND filter has a low EQE enhancement expectation rate in the desired range of the PE, and the applicable range of the ND filter is narrow.
  • the configuration of the black PDL shown in Fig. 4 can be applied. This can provide an OLED which has a high transmittance and a contrast improved by the black PDL and the optical film.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polarising Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un dispositif d'affichage qui réduit la réflectance de surface par une combinaison d'un PDL noir et d'un film optique, ce qui permet de supprimer la réduction d'une sortie de DELO. Un dispositif d'affichage dans lequel sont intégrées des diodes électroluminescentes organiques (DELO) ayant chacune une anode, une couche électroluminescente organique et une cathode fabriquée sur un substrat, comprend une paroi de séparation (PDL) constituée d'un matériau noir entourant la diode électroluminescente organique; et un film optique recouvrant la diode électroluminescente organique et la paroi de séparation.
PCT/CN2020/081068 2020-03-25 2020-03-25 Dispositif d'affichage et équipement d'affichage WO2021189288A1 (fr)

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JP2022557699A JP2023518514A (ja) 2020-03-25 2020-03-25 表示素子及び表示装置
KR1020227036537A KR20220157459A (ko) 2020-03-25 2020-03-25 디스플레이 디바이스 및 디스플레이 장비
CN202080077910.3A CN114651333A (zh) 2020-03-25 2020-03-25 显示设备和显示装置
PCT/CN2020/081068 WO2021189288A1 (fr) 2020-03-25 2020-03-25 Dispositif d'affichage et équipement d'affichage

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WO2024031670A1 (fr) * 2022-08-12 2024-02-15 Intel Corporation Architectures de micro-del à faible consommation d'énergie

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US20100052519A1 (en) * 2008-08-28 2010-03-04 Hee-Chul Jeon Organic light emitting diode display
US20100182552A1 (en) * 2009-01-21 2010-07-22 Soon-Ryong Park Organic light emitting diode display
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JP5305267B2 (ja) 2009-08-04 2013-10-02 株式会社ジャパンディスプレイ 有機ｅｌ装置
JP2015008036A (ja) 2011-10-31 2015-01-15 シャープ株式会社 有機発光素子
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CN101645455A (zh) * 2008-08-05 2010-02-10 三星移动显示器株式会社 有机发光二极管显示器
US20100052519A1 (en) * 2008-08-28 2010-03-04 Hee-Chul Jeon Organic light emitting diode display
US20100182552A1 (en) * 2009-01-21 2010-07-22 Soon-Ryong Park Organic light emitting diode display
US20140141547A1 (en) * 2012-11-16 2014-05-22 Samsung Display Co., Ltd. Method of manufacturing flexible display apparatus

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