WO2021187319A1 - Module de transport de substrat, système de traitement et procédé de transport de substrat - Google Patents

Module de transport de substrat, système de traitement et procédé de transport de substrat Download PDF

Info

Publication number
WO2021187319A1
WO2021187319A1 PCT/JP2021/009852 JP2021009852W WO2021187319A1 WO 2021187319 A1 WO2021187319 A1 WO 2021187319A1 JP 2021009852 W JP2021009852 W JP 2021009852W WO 2021187319 A1 WO2021187319 A1 WO 2021187319A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
substrate
circulation
replacement gas
gas
Prior art date
Application number
PCT/JP2021/009852
Other languages
English (en)
Japanese (ja)
Inventor
菜奈子 信田
順平 佐々木
隆寛 三木
航 松本
真士 若林
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2021187319A1 publication Critical patent/WO2021187319A1/fr

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

Definitions

  • This disclosure relates to a substrate transfer module, a processing system, and a substrate transfer method.
  • the first chamber and the second chamber are set so that the pressure in the first chamber is higher than the pressure in the second chamber.
  • a technique for forming a predetermined pressure difference between the two is known (see, for example, Patent Document 1).
  • the present disclosure provides a technique capable of maintaining an environment with a low oxygen concentration with a small amount of replacement gas consumption.
  • the substrate transfer module is a substrate transfer module for transporting a substrate to a processing chamber, in which a first chamber provided with a circulation fan and a replacement gas are sent from the first chamber by the circulation fan.
  • the inside of the first chamber has a second chamber including a transport device for transporting the substrate inside, and a circulation line that communicates the first chamber and the second chamber to circulate the replacement gas.
  • the substrate is transported by the transport device in a state of positive pressure and in a state where the replacement gas circulates through the circulation line.
  • an environment with a low oxygen concentration can be maintained with a small amount of replacement gas consumption.
  • the figure which shows an example of the processing system of embodiment The figure which shows an example of the hardware configuration of a control device.
  • the figure which shows an example of a loader module The figure for demonstrating an example of the operation at the time of starting up a loader module.
  • Diagram for explaining an example of operation of the loader module during normal operation The figure for demonstrating an example of the operation of a loader module when it is released to the atmosphere.
  • FIG. 1 is a diagram showing an example of the processing system of the embodiment.
  • FIG. 2 is a diagram showing an example of the hardware configuration of the control device.
  • the processing system 1 includes a transfer module 10, four process modules 20, a loader module 30, two load lock modules 40, and a control device 100.
  • the transfer module 10 has a substantially hexagonal shape in a plan view.
  • the transfer module 10 is composed of a vacuum chamber and has a transfer device 11 arranged inside.
  • the transport device 11 is formed by an articulated arm that can be bent / extended, raised / lowered, and swiveled at a position where the process module 20 and the load lock module 40 can be accessed.
  • the transport device 11 has two picks 12 that can bend and stretch independently in opposite directions, and can transport two wafers W at a time.
  • Wafer W is an example of a substrate.
  • the transfer device 11 is not limited to the configuration shown in FIG. 1 as long as the wafer W can be transferred between the process module 20 and the load lock module 40.
  • the process module 20 is arranged radially around the transfer module 10 and connected to the transfer module 10.
  • the process module 20 is composed of a processing chamber, and has a columnar stage 21 on which the wafer W is placed.
  • a predetermined process such as a film forming process is applied to the wafer W placed on the stage 21.
  • the transfer module 10 and the process module 20 are separated by a gate valve 22 that can be opened and closed.
  • the loader module 30 is an example of a substrate transfer module, and is arranged so as to face the transfer module 10.
  • the loader module 30 has a rectangular parallelepiped shape and is a transport chamber in which oxygen concentration and humidity are controlled.
  • a transfer device 31 is arranged in the loader module 30.
  • the transport device 31 is slidably supported on a guide rail 32 provided so as to extend a central portion in the loader module 30 along the longitudinal direction.
  • a linear motor (not shown) having an encoder, for example, is built in the guide rail 32, and the transfer device 31 moves along the guide rail 32 by driving the linear motor.
  • the transport device 31 has two articulated arms 33 arranged in two stages above and below as a transport arm.
  • a bifurcated pick 34 is attached to the tip of each articulated arm 33.
  • a wafer W is held on each pick 34.
  • Each articulated arm 33 can be bent, stretched, and raised and lowered in the radial direction from the center. Further, the bending and stretching motions of the articulated arms 33 can be individually controlled.
  • Each rotation axis of the articulated arm 33 is coaxially and rotatably connected to the base 35, and can rotate integrally with the base 35 in the turning direction, for example.
  • the guide rail 32 and the articulated arm 33 function as a drive mechanism for moving the pick 34.
  • the transfer device 31 transfers the wafer W between the load lock module 40, the transfer container 51, and the aligner 60, which will be described later.
  • the transfer device 31 is not limited to the configuration shown in FIG. 1 as long as the wafer W can be transferred between the load lock module 40, the transfer container 51, and the aligner 60.
  • the aligner 60 is arranged in the loader module 30.
  • the aligner 60 aligns the wafer W.
  • the aligner 60 has a rotating stage 61 that is rotated by a drive motor (not shown), and rotates with the wafer W placed on the rotating stage 61.
  • An optical sensor (not shown) for detecting the peripheral edge of the wafer W is provided on the outer periphery of the rotary stage 61.
  • the aligner 60 detects the center position of the wafer W and the direction of the notch with respect to the center of the wafer W by an optical sensor so that the center position of the wafer W and the direction of the notch in the load lock module 40 are predetermined positions and directions. Adjust the position to convey the wafer W to.
  • Two load lock modules 40 are connected to one side surface of the loader module 30 along the longitudinal direction.
  • one or a plurality of carry-in inlets 36 for introducing the wafer W are provided on the other side surface of the loader module 30 along the longitudinal direction.
  • three carry-in inlets 36 are provided on the other side surface of the loader module 30 along the longitudinal direction.
  • Each carry-in entrance 36 is provided with an opening / closing door 37 that can be opened / closed.
  • a load port 50 is provided corresponding to each carry-in port 36.
  • a transport container 51 for accommodating and transporting the wafer W is placed on the load port 50.
  • the transport container 51 may be a FOUP (Front-Opening Unified Pod) in which a plurality of (for example, 25) wafers W are placed and accommodated in multiple stages at predetermined intervals.
  • FOUP Front-Opening Unified Pod
  • a circulation portion 330 which will be described later, is provided on one side surface of the loader module 30 along the lateral direction.
  • the load lock module 40 is arranged between the transfer module 10 and the loader module 30.
  • the load lock module 40 includes an internal pressure variable chamber whose inside can be switched between vacuum and atmospheric pressure. Inside the load lock module 40, a columnar stage 41 on which the wafer W is placed is provided. When the wafer W is carried from the loader module 30 to the transfer module 10, the load lock module 40 maintains the inside at atmospheric pressure to receive the wafer W from the loader module 30, and then decompresses the inside to transfer the wafer to the transfer module 10. Bring in W.
  • the inside is maintained in a vacuum to receive the wafer W from the transfer module 10, and then the inside is boosted to atmospheric pressure to transfer the wafer W to the loader module 30.
  • the load lock module 40 and the transfer module 10 are separated by a gate valve 42 that can be opened and closed.
  • the load lock module 40 and the loader module 30 are separated by a gate valve 43 that can be opened and closed.
  • the control device 100 controls the operation of each component of the processing system 1.
  • the control device 100 is a computer having a drive device 101, an auxiliary storage device 102, a memory device 103, a CPU 104, an interface device 105, a display device 106, and the like, which are connected to each other by a bus 108. be.
  • the program that realizes the processing in the control device 100 is provided by a recording medium 107 such as a CD-ROM.
  • the recording medium 107 storing the program is set in the drive device 101, the program is installed in the auxiliary storage device 102 from the recording medium 107 via the drive device 101.
  • the program does not necessarily have to be installed from the recording medium 107, and may be downloaded from another computer via the network.
  • the auxiliary storage device 102 stores necessary information such as installed programs and recipes.
  • the memory device 103 reads and stores the program from the auxiliary storage device 102 when the program is instructed to start.
  • the CPU 104 executes the function related to the processing system 1 according to the program stored in the memory device 103.
  • the interface device 105 is used as an interface for connecting to a network.
  • the display device 106 displays various information and also functions as an operation unit that accepts operations by the operator.
  • FIG. 3 is a diagram showing an example of the loader module 30.
  • the loader module 30 is, for example, an EFEM (Equipment Front End Module), and forms a space having a higher degree of cleanliness than the environment in the factory where the processing system 1 is installed.
  • the space may be, for example, Mini-E (Mini-Environment).
  • the loader module 30 includes a first chamber 310, a second chamber 320, a circulation unit 330, a gas introduction unit 340, an exhaust unit 350, and a control unit 390.
  • the first room 310 is connected to the upper part of the second room 320.
  • the pressure in the first chamber 310 is set lower than the pressure in the second chamber 320.
  • the first chamber 310 includes an inflow port 311 and a first pressure gauge 312 and an airflow forming unit 313.
  • the inflow port 311 is a port through which the replacement gas flows from the circulation unit 330, and the replacement gas is introduced from the circulation unit 330 into the first chamber 310 via the inflow port 311.
  • the inflow port 311 is formed on one side wall of the first chamber 310, but for example, the inflow port 311 may be formed on two opposite side walls of the first chamber 310 and is formed on the ceiling. It may have been done.
  • the replacement gas may be, for example , an inert gas such as nitrogen (N 2 ) or argon (Ar) or clean dry air (CDA).
  • the first pressure gauge 312 measures the pressure in the first chamber 310 and transmits the measured value to the control unit 390.
  • the airflow forming unit 313 includes a circulation fan 314 and a filter 315.
  • the circulation fan 314 is provided in the first chamber 310, and the replacement gas is sent from the first chamber 310 into the second chamber 320.
  • the filter 315 is provided below the circulation fan 314, purifies the replacement gas sent by the circulation fan 314 by filtering it, and supplies it into the second chamber 320.
  • the filter 315 includes, for example, a ULPA (Ultra-Low Penetration Air) filter and a chemical filter.
  • the airflow forming unit 313 forms a downdraft of purified gas from the first chamber 310 to the second chamber 320 by driving the circulation fan 314.
  • the airflow forming unit 313 may be a fan filter unit (FFU) in which the circulation fan 314 and the filter 315 are integrated.
  • FFU fan filter unit
  • the second chamber 320 is connected below the first chamber 310, and the above-mentioned transport device 31 is arranged inside.
  • the second chamber 320 includes a circulation port 321 and an exhaust port 322, a second pressure gauge 323, a thermometer 324, a dew point gauge 325, and an oxygen concentration gauge 326.
  • the circulation port 321 is a port for flowing out the replacement gas from the inside of the second chamber 320 to the circulation line 331, and the replacement gas flows out from the inside of the second chamber 320 to the circulation portion 330 through the circulation port 321.
  • the circulation port 321 is formed on one side wall of the second chamber 320, but for example, the circulation port 321 may be formed on two opposite side walls of the second chamber 320, and is formed at the bottom. It may have been done.
  • the exhaust port 322 is a port for exhausting gas from the inside of the second chamber 320 to the outside, and the gas is exhausted from the inside of the second chamber 320 via the exhaust port 322.
  • the exhaust port 322 is formed on the side wall of the second chamber 320, but for example, the exhaust port 322 may be formed on two opposite side walls of the second chamber 320, and is formed at the bottom. You may. Further, for example, the exhaust port 322 may be formed in the circulation line 331.
  • the second pressure gauge 323, thermometer 324, dew point gauge 325 and oxygen concentration meter 326 measure the pressure, temperature, dew point temperature and oxygen concentration in the second chamber 320, respectively, and transmit the measured values to the control unit 390. ..
  • the circulation unit 330 circulates the replacement gas from the second chamber 320 to the first chamber 310.
  • the circulation unit 330 includes a circulation line 331 and a circulation valve 332.
  • One end of the circulation line 331 is connected to the inflow port 311 and the other end is connected to the circulation port 321. Is circulated into the first chamber 310.
  • the circulation valve 332 is provided so that the circulation port 321 can be opened and closed, and controls the communication state between the inside of the second chamber 320 and the inside of the circulation line 331.
  • the circulation valve 332 When the circulation valve 332 is closed, the communication between the second chamber 320 and the circulation line 331 is cut off, and the circulation of the replacement gas from the second chamber 320 to the first chamber 310 is stopped.
  • the circulation valve 332 when the circulation valve 332 is opened, the inside of the second chamber 320 and the inside of the circulation line 331 communicate with each other, and the replacement gas circulates from the inside of the second chamber 320 into the first chamber 310.
  • the circulation valve 332 may be provided in the middle of the circulation line 331.
  • the gas introduction unit 340 introduces the inert gas and clean dry air, which are replacement gases, into the circulation line 331.
  • the gas introduction unit 340 includes an inert gas supply source 341, an inert gas supply pipe 342, a valve 343, a flow rate controller 344, a CDA supply source 345, a CDA supply pipe 346, a flow rate adjusting valve 347, and a valve 348.
  • the inert gas supply source 341 supplies the inert gas into the circulation line 331 via the inert gas supply pipe 342.
  • Inert gas may be, for example, N 2, Ar.
  • the valve 343 is interposed in the inert gas supply pipe 342, and opens and closes the flow path in the inert gas supply pipe 342.
  • the flow control controller 344 is interposed in the inert gas supply pipe 342 and controls the flow rate of the inert gas flowing in the inert gas supply pipe 342.
  • the flow rate controller 344 may be, for example, a mass flow controller (MFC).
  • the CDA supply source 345 supplies clean dry air (CDA) into the circulation line 331 via the CDA supply pipe 346.
  • the flow rate adjusting valve 347 is interposed in the CDA supply pipe 346, and adjusts the flow rate of the clean and dry air flowing in the CDA supply pipe 346.
  • the valve 348 is interposed in the CDA supply pipe 346 and opens and closes the flow path in the CDA supply pipe 346.
  • the gas introduction unit 340 supplies at least one of the inert gas whose flow rate is controlled by the flow rate controller 344 and the clean dry air whose flow rate is controlled by the flow rate adjusting valve 347 into the circulation line 331.
  • the exhaust unit 350 exhausts the gas in the second chamber 320.
  • the exhaust unit 350 includes an exhaust pipe 351 and a pressure control valve 352.
  • the exhaust pipe 351 is connected to the exhaust port 322 of the second chamber 320.
  • the pressure control valve 352 is interposed in the exhaust pipe 351 and adjusts the pressure in the second chamber 320.
  • the exhaust unit 350 exhausts the inside of the second chamber 320 through the exhaust pipe 351 by the pressure control valve 352 so that the inside of the second chamber 320 has a predetermined pressure.
  • the control unit 390 has an air flow forming unit 313 and a gas introducing unit 340 based on at least one measured value of the first pressure gauge 312, the second pressure gauge 323, the thermometer 324, the dew point gauge 325 and the oxygen concentration meter 326. And at least one of the exhaust unit 350 is controlled.
  • the control unit 390 operates the circulation fan 314 and opens the circulation valve 332 to move the wafer W into the first chamber 310 and the second chamber 320 via the circulation line 331.
  • the replacement gas is circulated between them.
  • the control unit 390 adjusts at least one of the gas introduction unit 340 and the exhaust unit 350 so that the inside of the first chamber 310 is in a positive pressure state.
  • the control unit 390 adjusts the inside of the first chamber 310 to a positive pressure state by reducing the opening degree of the pressure control valve 352 of the exhaust unit 350 to reduce the speed of exhausting the inside of the second chamber 320. do.
  • control unit 390 opens the valve 348 of the gas introduction unit 340 and increases the opening degree of the flow rate adjusting valve 347 to reduce the amount of clean and dry air supplied into the first chamber 310 via the circulation line 331. By increasing the number, the inside of the first chamber 310 is adjusted to a positive pressure state. Further, for example, the control unit 390 opens the valve 343 of the gas introduction unit 340 and adjusts the flow rate controller 344 to increase the amount of the inert gas supplied into the first chamber 310 via the circulation line 331. Therefore, the inside of the first chamber 310 is adjusted to a positive pressure state. Further, the control unit 390 may perform these operations in combination.
  • FIG. 4 is a diagram for explaining an example of the operation at the time of starting up the loader module 30. It should be noted that the loader module 30 will be described assuming that the inside of the second chamber 320 has an atmospheric atmosphere at the start of the operation at the time of startup. Further, in FIG. 4, the state in which the valve is open is shown in white, and the state in which the valve is closed is shown in black.
  • the control unit 390 closes the circulation valve 332 and stops the circulation fan 314. Further, the control unit 390 opens the valve 343, sets the set flow rate of the flow rate controller 344 to the maximum value (for example, 1000 L / min), and sets the opening degree of the pressure control valve 352 to fully open. As a result, a large flow rate of the inert gas is introduced from the inert gas supply source 341 into the second chamber 320, and the inside of the second chamber 320 is exhausted at high speed. As a result, the inside of the second chamber 320 can be changed from the atmospheric atmosphere to the inert gas atmosphere in a short time.
  • the valve 348 is closed, but for example, the valve 348 may be open. Further, in the present embodiment, the circulation fan 314 is stopped, but the circulation fan 314 may be driven without being stopped.
  • the control unit 390 reduces the opening degree of the pressure control valve 352 to reduce the speed at which the inside of the second chamber 320 is exhausted. make low. Further, the control unit 390 reduces the set flow rate of the flow rate controller 344. Further, the control unit 390 drives the circulation fan 314 and opens the circulation valve 332. As a result, the amount of the inert gas introduced is reduced, and the inert gas circulates between the first chamber 310 and the second chamber 320.
  • the measured value of the oxygen concentration meter 326 is equal to or less than a predetermined value (for example, 100 ppm) in a state where the inert gas is circulated between the first chamber 310 and the second chamber 320. If it is maintained at, it is determined that the start-up of the loader module 30 is completed. Then, the control unit 390 ends the operation at the time of startup.
  • a predetermined value for example, 100 ppm
  • the control unit 390 transfers a large flow rate of the inert gas into the second chamber 320 without circulating the replacement gas between the first chamber 310 and the second chamber 320.
  • the step of exhausting the inside of the second chamber 320 at high speed is carried out.
  • the oxygen concentration and humidity in the second chamber 320 can be reduced in a short time. In other words, the time required to start up the loader module 30 can be shortened.
  • Examples of the operation of the loader module 30 during normal operation include an operation of transporting the wafer W by the transport device 31 in the second chamber 320.
  • FIG. 5 is a diagram for explaining an example of the operation of the loader module 30 during normal operation.
  • the state in which the valve is open is shown in white, and the state in which the valve is closed is shown in black.
  • the control unit 390 opens the circulation valve 332 and drives the circulation fan 314 to circulate the replacement gas between the first chamber 310 and the second chamber 320 via the circulation line 331. At this time, the control unit 390 adjusts at least one of the gas introduction unit 340 and the exhaust unit 350 so that the inside of the first chamber 310 is in a positive pressure state.
  • the control unit 390 reduces the opening degree of the pressure control valve 352 to reduce the speed of exhausting the inside of the second chamber 320, opens the valve 343, and adjusts the flow rate controller 344 to adjust the circulation line 331.
  • the amount of the inert gas supplied into the first chamber 310 via the above is increased.
  • the inside of the first chamber 310 is set to a positive pressure state.
  • the control unit 390 sets the inside of the first chamber 310 to a positive pressure state by, for example, only reducing the opening degree of the pressure control valve 352 to reduce the speed of exhausting the inside of the second chamber 320. good.
  • control unit 390 only opens the valve 343 and adjusts the flow rate controller 344 to increase the amount of the inert gas supplied into the first chamber 310 via the circulation line 331.
  • the inside of the chamber 310 may be set to a positive pressure state.
  • control unit 390 only opens the valve 348 and increases the opening degree of the flow rate adjusting valve 347 to increase the amount of clean and dry air supplied into the first chamber 310 via the circulation line 331.
  • the inside of the first chamber 310 may be set to a positive pressure state.
  • control unit 390 combines, for example, at least two or more of the opening and closing of the pressure control valve 352, the opening and closing of the valve 343, the adjustment of the flow rate controller 344, the adjustment of the flow rate adjusting valve 347, and the opening and closing of the valve 348.
  • the inside of the first chamber 310 may be set to a positive pressure state.
  • the control unit 390 adjusts at least one of the gas introduction unit 340 and the exhaust unit 350 so that the inside of the first chamber 310 is in a positive pressure state.
  • the circulation fan 314 is driven in a state where the replacement gas is circulated between the first chamber 310 and the second chamber 320 to send the replacement gas from the first chamber 310 into the second chamber 320. Even so, it is possible to suppress the mixing of air into the second chamber 320. As a result, an environment with a low oxygen concentration can be maintained with a small amount of replacement gas consumption.
  • Examples of the operation of the loader module 30 when it is released to the atmosphere include an operation of returning the inside of the second chamber 320 from the replacement gas atmosphere to the atmosphere.
  • FIG. 6 is a diagram for explaining an example of the operation of the loader module 30 when it is released to the atmosphere. It should be noted that the loader module 30 will be described as performing the operation during the normal operation at the start of the operation at the time of opening to the atmosphere. Further, in FIG. 6, the state in which the valve is open is shown in white, and the state in which the valve is closed is shown in black.
  • control unit 390 closes the circulation valve 332, stops the circulation fan 314, and opens the valve 348.
  • clean and dry air is introduced into the second chamber 320, so that the inside of the second chamber 320 shifts from the replacement gas atmosphere to the atmospheric atmosphere.
  • control unit 390 determines that the release to the atmosphere of the loader module 30 is completed after the measured value of the oxygen concentration meter 326 becomes a predetermined value (for example, 19.5%) or more, and operates at the time of release to the atmosphere. To end.
  • a predetermined value for example, 19.5%
  • the control unit 390 introduces clean dry air into the second chamber 320 without circulating the replacement gas between the first chamber 310 and the second chamber 320. To carry out. As a result, the inside of the second chamber 320 can be changed from the replacement gas atmosphere to the atmospheric atmosphere in a short time. In other words, the time required to release the loader module 30 to the atmosphere can be shortened.
  • the wafer W is transported by the transport device 31 in a state where the inside of the first chamber 310 is in a positive pressure state.
  • the circulation fan 314 is driven in a state where the replacement gas is circulated between the first chamber 310 and the second chamber 320 to send the replacement gas from the first chamber 310 into the second chamber 320. Even so, it is possible to suppress the mixing of air into the second chamber 320. As a result, an environment with a low oxygen concentration can be maintained with a small amount of replacement gas consumption.
  • the pressure inside the first chamber 310 is negative, the possibility that the atmosphere is mixed into the first chamber 310 from the outside of the loader module 30 increases. Then, when the circulation fan 314 is driven with the air mixed in the first chamber 310, the replacement gas mixed with the atmosphere is sent from the first chamber 310 into the second chamber 320 by the circulation fan 314. The oxygen concentration and humidity in the two chambers 320 increase.
  • the control unit 390 has a large flow rate in the second chamber 320 without circulating the replacement gas between the first chamber 310 and the second chamber 320.
  • the step of introducing the inert gas and exhausting the inside of the second chamber 320 at high speed is carried out.
  • the oxygen concentration and humidity in the second chamber 320 can be reduced in a short time. In other words, the time required to start up the loader module 30 can be shortened.
  • the control unit 390 when the control unit 390 is released to the atmosphere, the control unit 390 does not circulate the replacement gas between the first chamber 310 and the second chamber 320, but clean and dry air in the second chamber 320. To carry out the steps to introduce. As a result, the inside of the second chamber 320 can be changed from the replacement gas atmosphere to the atmospheric atmosphere in a short time. In other words, the time required to release the loader module 30 to the atmosphere can be shortened.
  • the operation was shifted to the operation at the time of normal operation. Then, in the operation during normal operation, the gas introduction unit 340 and the exhaust unit 350 were controlled so that the inside of the first chamber 310 was in a positive pressure state (the pressure difference from the atmospheric pressure was 110 Pa). At this time, the differential pressure from the atmospheric pressure in the second chamber 320 was 400 Pa. Further, in the first embodiment, the flow rate F2 of the inert gas supplied from the gas introduction unit 340 to the circulation line 331 during normal operation is the inert gas supplied from the gas introduction unit 340 to the circulation line 331 at the initial stage at the time of start-up. The flow rate was set to be 15 to 20% of the flow rate F1.
  • Comparative Example 1 the operation at the time of start-up was performed in the same manner as in Example 1, and then the operation was shifted to the operation at the time of normal operation. Then, in the operation during normal operation, the gas introduction unit 340 and the exhaust unit 350 were controlled so that the inside of the first chamber 310 was in a state of the same level as the atmospheric pressure (the pressure difference from the atmospheric pressure was 0 Pa). At this time, the differential pressure from the atmospheric pressure in the second chamber 320 was 300 Pa. Further, in Comparative Example 1, similarly to the first embodiment, the flow rate F2 of the inert gas supplied from the gas introduction unit 340 to the circulation line 331 during normal operation is transferred from the gas introduction unit 340 to the circulation line 331 at the initial stage at the time of startup. It was set to be 15 to 20% of the flow rate F1 of the supplied inert gas.
  • FIG. 7 is a diagram showing the measurement results of oxygen concentration and absolute humidity in Example 1.
  • FIG. 8 is a diagram showing the measurement results of oxygen concentration and absolute humidity in Comparative Example 1.
  • the horizontal axis represents time
  • the first vertical axis represents flow rate
  • the second vertical axis represents oxygen concentration and absolute humidity.
  • the time t1 indicates the time when the operation at the time of startup is switched to the operation at the time of normal operation (the time when the driving of the circulation fan 314 is started).
  • the oxygen concentration indicated by a thin solid line in FIG. 7
  • the absolute humidity indicated by a thin solid line in FIG. 7
  • the absolute humidity indicated by a thin solid line in FIG. 7
  • the oxygen concentration (indicated by a thin solid line in FIG. 8) is the reference after the time t1 when the operation at the time of start-up is shifted to the operation at the time of normal operation. It can be seen that the value is significantly higher than the value (indicated by a thick solid line in FIG. 8). It can also be seen that the absolute humidity (indicated by the broken line in FIG. 8) is also high near the reference value.
  • Processing system 20
  • Process module 30 Loader module 31
  • Conveyor device 310 1st chamber 314
  • Circulation fan 320 2nd chamber 331
  • Circulation line 340
  • Gas introduction unit 350
  • Exhaust unit 352

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention, selon un premier aspect, concerne un module de transport de substrat servant à transporter un substrat vers une chambre de traitement comprenant : une première chambre dans laquelle est installé un ventilateur de circulation ; une seconde chambre alimentée par un gaz de substitution provenant de la première chambre au moyen du ventilateur de circulation et comprenant un dispositif de transport servant à transporter le substrat ; et une conduite de circulation qui relie les première et seconde chambres et qui fait circuler le gaz de substitution. Le substrat est transporté par le dispositif de transport dans un état dans lequel l'intérieur de la première chambre est à une pression positive et dans lequel le gaz de substitution est mis en circulation par l'intermédiaire de la conduite de circulation.
PCT/JP2021/009852 2020-03-17 2021-03-11 Module de transport de substrat, système de traitement et procédé de transport de substrat WO2021187319A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-046447 2020-03-17
JP2020046447A JP2021150372A (ja) 2020-03-17 2020-03-17 基板搬送モジュール、処理システム及び基板搬送方法

Publications (1)

Publication Number Publication Date
WO2021187319A1 true WO2021187319A1 (fr) 2021-09-23

Family

ID=77772065

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/009852 WO2021187319A1 (fr) 2020-03-17 2021-03-11 Module de transport de substrat, système de traitement et procédé de transport de substrat

Country Status (2)

Country Link
JP (1) JP2021150372A (fr)
WO (1) WO2021187319A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023048293A (ja) * 2021-09-28 2023-04-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040168742A1 (en) * 2003-02-12 2004-09-02 Kim Hyun-Joon Module for transferring a substrate
JP2018160544A (ja) * 2017-03-22 2018-10-11 Tdk株式会社 Efem及びefemのガス置換方法
JP2019161116A (ja) * 2018-03-15 2019-09-19 シンフォニアテクノロジー株式会社 Efem

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040168742A1 (en) * 2003-02-12 2004-09-02 Kim Hyun-Joon Module for transferring a substrate
JP2018160544A (ja) * 2017-03-22 2018-10-11 Tdk株式会社 Efem及びefemのガス置換方法
JP2019161116A (ja) * 2018-03-15 2019-09-19 シンフォニアテクノロジー株式会社 Efem

Also Published As

Publication number Publication date
JP2021150372A (ja) 2021-09-27

Similar Documents

Publication Publication Date Title
JP4553574B2 (ja) 基板移送モジュールの汚染を制御することができる基板処理方法
KR101370733B1 (ko) 기판 처리 장치
KR19990023508A (ko) 처리장치 및 처리장치내의 기체의 제어방법
US9875920B1 (en) Substrate processing apparatus
JP5334261B2 (ja) 基板処理装置、基板処理装置における表示方法及び半導体装置の製造方法
JP2010103486A (ja) 基板処理装置のセットアップ方法。
KR20190109244A (ko) Efem 시스템, 및 efem 시스템에 있어서의 가스 공급 방법
KR20180111592A (ko) 기판 처리 장치
US8794896B2 (en) Vacuum processing apparatus and zonal airflow generating unit
WO2021187319A1 (fr) Module de transport de substrat, système de traitement et procédé de transport de substrat
JP2007149948A (ja) 真空処理装置
US20240006200A1 (en) Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
JP2005322762A (ja) 基板処理装置
JP7234549B2 (ja) 真空搬送モジュール及び真空搬送方法
JP2018170347A (ja) ウェハー搬送装置及びウェハー搬送方法
JP2002237507A (ja) 処理システム及び処理システムの被処理体の搬送方法
US20220238359A1 (en) Controlling method and substrate transport module
KR102509263B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP2006269810A (ja) 基板処理装置
JPH05326666A (ja) 搬送装置
JP6031304B2 (ja) 基板処理装置及び基板処理方法
WO2023140259A1 (fr) Dispositif et procédé de transport
JP2008288282A (ja) 基板処理装置
US12027384B2 (en) Heat treatment apparatus and dummy substrate processing method
US20230080991A1 (en) Wafer processing apparatus including efem and method of processing wafer

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21770936

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21770936

Country of ref document: EP

Kind code of ref document: A1