WO2021179707A1 - Procédé et système de commande de charge douce multiphase pour transformateur à semi-conducteurs à courant continu multi-niveaux - Google Patents

Procédé et système de commande de charge douce multiphase pour transformateur à semi-conducteurs à courant continu multi-niveaux Download PDF

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WO2021179707A1
WO2021179707A1 PCT/CN2020/134878 CN2020134878W WO2021179707A1 WO 2021179707 A1 WO2021179707 A1 WO 2021179707A1 CN 2020134878 W CN2020134878 W CN 2020134878W WO 2021179707 A1 WO2021179707 A1 WO 2021179707A1
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bridge arm
sub
mmc
primary side
side mmc
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PCT/CN2020/134878
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English (en)
Chinese (zh)
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唐德平
赵涛
缪靖宇
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合肥科威尔电源系统股份有限公司
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Publication of WO2021179707A1 publication Critical patent/WO2021179707A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements

Definitions

  • the invention belongs to the technical field of power electronics, and specifically relates to a multi-stage soft charging control method and system for a multi-level DC solid-state transformer.
  • Modular multilevel DC solid-state transformers can not only realize the transformation, isolation and energy conversion functions of traditional transformers, but also have the advantages of simple control, high scalability, and realization of primary and secondary fault isolation. It has received wide attention from scholars at home and abroad.
  • a modular multi-level DC solid-state transformer and its charging control method discloses a modular multi-level DC solid-state transformer and its charging control method.
  • the transformer includes two sets of MMC, high-frequency transformer, resistors and switches.
  • One set of MMC is connected to the primary side of the high-frequency transformer, and the other set of MMC is connected to the secondary side of the high-frequency transformer.
  • the primary side MMC is connected through a parallel structure of resistors and switches. Connect the DC power supply, and connect the MMC on the secondary side to the load.
  • This method first inputs all 2N sub-modules of each phase of the primary side MMC of the DC transformer, and then reduces the number of primary side MMC sub-modules by comparing the primary side DC current value with the limited current value, and finally the number of sub-modules input to each phase Redistribute the upper and lower bridge arms and determine the trigger pulse of the MMC on the primary side in combination with the phase shift angle to realize the soft charging of the DC transformer.
  • the above-mentioned invention patent application only performs closed-loop control on the secondary side.
  • the current impact during the charging process of the primary side is controlled in an open-loop manner.
  • the magnitude and time of the inrush current are uncontrollable, and the dynamic performance is poor, resulting in more modular power.
  • the flat DC solid-state transformer will still generate a large current spike on the AC side and DC side of the system when it is started, which will easily cause damage to the power semiconductor devices and high-frequency transformers in the sub-modules, and will shorten the service life of the capacitors. Conducive to the safe operation of the system.
  • the technical problem to be solved by the present invention is how to reduce the problem of current spikes on the AC side and the DC side when the modular multilevel DC solid-state transformer is started.
  • the present invention solves the above technical problems through the following technical solutions: a multi-stage soft charging control method for a multi-level DC solid-state transformer.
  • the modular multi-level DC solid-state transformer includes an input source Vdc1, an output source Vdc2, and a single Side MMC, secondary side MMC, current-limiting resistor Rd , current-limiting switch S d , high-frequency transformer T; the leakage inductance of the high-frequency transformer T is L s ; the primary-side MMC includes multiple sub-modules SM An H-bridge circuit is formed; the secondary-side MMC includes a plurality of sub-modules SM to form an H-bridge circuit; the primary-side MMC and the secondary-side MMC are connected through a high-frequency transformer T; the current-limiting resistor Rd After being connected in parallel with the current-limiting switch S d , one end is connected to the primary side MMC, and the other end is connected to the input source Vdc1; the input source Vdc1 is a direct
  • the multi-stage soft charging control method includes: stage one, the sub-module SM of the primary side MMC does not control charging; stage two: using the peak current to control the soft charging of the sub-module SM of the primary side MMC; stage three: using phase-shift modulation control The sub-module SM of the secondary side MMC is soft charged.
  • the above-mentioned multi-stage soft charging control method is applied to a modular multi-level DC solid-state transformer, and different soft charging strategies are adopted at different stages to realize the rapid and stable charging of the sub-module capacitance of the modular multi-level DC solid-state transformer, and reduce This reduces the current spikes on the AC side and the DC side when the transformer is started, protects the power devices and high-frequency transformers in the sub-modules, increases the service life of the capacitors, and greatly facilitates the safe operation of the system.
  • the sub-module SM includes a first power switch tube (S 1 ), a second power switch tube (S 2 ), a parallel capacitor C, a first anti-parallel diode (VD 1 ), The second anti-parallel diode (VD 2 ); the first power switch tube (S 1 ) and the second power switch tube (S 2 ) form a half-bridge structure; the first anti-parallel diode (VD 1 ) is connected in anti-parallel Two ends of a power switch (S 1 ); a second anti-parallel diode (VD 2 ) is connected in anti-parallel to both ends of the second power switch (S 2 ); the parallel capacitor C is connected in parallel to the half-bridge structure Both ends; the midpoint of the half-bridge structure is used as the input end of the sub-module SM.
  • the sub-module SM has two working states:
  • the driving pulse of the first power switch tube (S 1 ) in the sub-module SM is 0 throughout the switching period, and the driving pulse of the second power switch tube (S 2 ) is the duty cycle Is the PWM signal wave of D; the duty ratio D is the proportion of the time required for the average value of the primary side bridge arm current to rise from the initial value of the cycle to the given peak value of the primary side bridge arm current.
  • the first stage is specifically:
  • the second stage is specifically:
  • i 1 0.5(i a +i b )
  • stage three is specifically as follows:
  • the nominal voltage (V 1 * ) of the primary side capacitor is calculated according to the following formula:
  • V 1 * the nominal voltage of the primary side capacitor
  • V dc1 is the voltage of the input source
  • M is the number of sub-modules SM per half bridge arm of the primary side MMC.
  • the nominal voltage (V 2 * ) of the secondary side capacitor is calculated according to the following formula:
  • V 2 * the nominal voltage of the primary side capacitor
  • V dc2 is the voltage of the output source
  • N is the number of sub-modules SM per half bridge arm of the secondary side MMC.
  • a multi-stage soft charging control system for a multi-level DC solid-state transformer includes an input source V dc1 , an output source V dc2 , a primary side MMC, a secondary side MMC, and a current-limiting resistor R d , current-limiting switch S d , high-frequency transformer T; the leakage inductance of the high-frequency transformer T is L s ; the primary-side MMC includes a plurality of sub-modules SM to form an H-bridge circuit; the secondary MMC-side sub-module SM comprises a plurality of H-bridge circuit configuration; the primary side and the secondary side MMC MMC connected by high-frequency transformer T; after the current limiting resistor R d and S d limiting switch in parallel with the first end The other end is connected to the input source V dc1 ; the input source V dc1 is a direct current source; the input source V dc1 supplies power to the primary side MMC; the output
  • the multi-stage soft charging control system includes: module one, the sub-module SM of the primary side MMC does not control the charging module; module two: using the peak current to control the sub-module SM soft charging module of the primary side MMC; module three: using phase shifting Modulate and control the sub-module SM soft charging module of the secondary side MMC.
  • the primary side MMC further includes a first bridge arm and a second bridge arm; the first bridge arm and the second bridge arm of the primary side MMC constitute an H bridge structure;
  • the first bridge arm of the primary side MMC includes an upper half bridge arm and a lower half bridge arm;
  • the second bridge arm of the primary side MMC also includes an upper half bridge arm and a lower half bridge arm;
  • the upper half of the first bridge arm of the primary side MMC includes M sub-modules SM and an inductance La1 on the first bridge arm, and the M sub-modules SM and an inductance La1 on the first bridge arm are in turn series; lower half bridge arm of the first arm of the primary side of the MMC comprises M sub-module SM and the inductor L a2 next first bridge arm, the first arm of a half bridge arm lower side of the MMC
  • the structure of is symmetrical with the structure of the upper half of the first bridge arm of the primary side MMC; the symmetry point is point a;
  • the upper half of the second bridge arm of the primary side MMC includes M sub-modules SM and an inductance L b1 on the second bridge arm.
  • the M sub-modules SM and the inductance L b1 on the second bridge arm are in turn In series;
  • the lower half of the second leg of the primary side MMC includes M submodules SM and a second lower inductance L b2 , the lower half of the second leg of the primary side MMC
  • the structure of is symmetrical with the structure of the upper half of the second bridge arm of the primary side MMC; the symmetry point is point b;
  • the secondary side MMC includes a third bridge arm and a fourth bridge arm; the third bridge arm and the fourth bridge arm of the secondary side MMC constitute an H bridge structure;
  • the third bridge arm of the secondary side MMC includes an upper half bridge arm and a lower half bridge arm;
  • the fourth bridge arm of the secondary side MMC also includes an upper half bridge arm and a lower half bridge arm;
  • the upper half of the third bridge arm of the secondary side MMC includes N sub-modules SM and an inductance L c1 on the third bridge arm, the N sub-modules SM and an inductance L c1 on the third bridge arm
  • the lower half of the third bridge arm of the secondary side MMC includes N sub-modules SM and a lower inductance L c2 of the third bridge arm
  • the lower half of the third bridge arm of the secondary side MMC The structure of the half bridge arm is symmetrical to the structure of the upper half bridge arm of the third bridge arm of the secondary side MMC; the symmetry point is point c;
  • the upper half of the fourth bridge arm of the secondary side MMC includes N sub-modules SM and an inductance L d1 on the fourth bridge arm, the N sub-modules SM and an inductance L d1 on the fourth bridge arm
  • the lower half of the fourth bridge arm of the secondary side MMC includes N sub-modules SM and a fourth bridge arm lower inductance L d2 , the lower half of the fourth bridge arm of the secondary side MMC
  • the structure of the half bridge arm is symmetrical to the structure of the upper half bridge arm of the fourth bridge arm of the secondary side MMC; the symmetry point is point d;
  • the four terminals of the high-frequency transformer T are respectively connected to point a, point b, point c, and point d.
  • the multi-stage soft charging control method of the present invention is applied to a modular multi-level DC solid-state transformer, and different soft charging strategies are adopted at different stages to realize the rapid, rapid, and rapid, Stable charging reduces the current spikes on the AC side and DC side when the transformer is started, protects the power devices and high-frequency transformers in the sub-modules, increases the service life of the capacitors, and greatly benefits the safe operation of the system.
  • Fig. 1 is a topology diagram of a modular multi-level DC solid-state transformer according to an embodiment of the present invention.
  • Fig. 2 is a schematic diagram of a multi-stage soft charging control method of a modular multi-level DC solid-state transformer according to an embodiment of the present invention.
  • Fig. 3 is a flowchart of a multi-stage soft charging control method of a modular multi-level DC solid-state transformer according to an embodiment of the present invention.
  • Fig. 4 is a structural diagram of a modular multi-level DC solid-state transformer sub-module according to an embodiment of the present invention.
  • Fig. 5 is a driving waveform diagram of a modular multi-level direct current solid-state transformer sub-module working in a locked state according to an embodiment of the present invention.
  • Fig. 6 is a driving waveform diagram of a modular multi-level direct current solid-state transformer sub-module working in a bypass state according to an embodiment of the present invention.
  • the modular multi-level DC solid-state transformer includes an input source V dc1 , an output source V dc2 , a primary side MMC, and a secondary side MMC.
  • the primary-side MMC includes multiple sub-modules SM to form an H-bridge circuit
  • the secondary-side MMC includes a plurality of sub-modules SM to form an H-bridge circuit; the primary-side MMC and the secondary-side MMC are connected through a high-frequency transformer T; the current-limiting resistor Rd and the current-limiting switch S d After parallel connection, one end is connected to the primary side MMC, and the other end is connected to the input source V dc1 ; the input source V dc1 is a direct current source; the input source V dc1 supplies power to the primary side MMC; the output source V dc2 is a direct current source Or the load is connected to the output end of the secondary side MMC.
  • the described multi-stage soft charging control method includes: stage one, the sub-module SM of the primary side MMC does not control charging; stage two: using the peak current to control the sub-module SM of the primary side MMC soft charging ; Phase 3: Use phase-shift modulation to control the soft charging of the sub-module SM of the secondary side MMC.
  • the sub-module SM includes a first power switch S 1 , a second power switch S 2 , a parallel capacitor C, a first anti-parallel diode VD 1 , and a second anti-parallel diode VD 2 ;
  • the first power switch tube S 1 and the second power switch tube S 2 described above constitute a half-bridge structure;
  • the first anti-parallel diode VD 1 is connected in anti-parallel to both ends of the first power switch tube S 1 ;
  • the second anti-parallel diode VD 2 is anti-parallel connected in parallel across the second power switch S 2; ends of the parallel capacitor C connected in parallel with the half-bridge; the midpoint of the half-bridge configuration as the input terminal of the SM module.
  • the sub-module SM has two working states:
  • the driving pulse of the first power switch S 1 in the sub-module SM is 0 during the entire switching period, and the driving pulse of the second power switch S 2 is a PWM with a duty cycle of D Signal wave; the duty cycle D is the ratio of the time required for the average value of the primary side bridge arm current to rise from the initial value of the cycle to the given peak value of the primary side bridge arm current.
  • the first stage is specifically:
  • the path of the charging current of the first leg of the primary side MMC is: V dc1 positive ⁇ R d ⁇ VD11 ⁇ C11 ⁇ L a1 ⁇ L a2 ⁇ VD13 ⁇ C13 ⁇ V dc1 negative;
  • the path of the charging current of the second leg of the primary side MMC is: V dc1 positive ⁇ R d ⁇ VD21 ⁇ C12 ⁇ L b1 ⁇ L b2 ⁇ VD23 ⁇ C14 ⁇ V dc1 negative.
  • the nominal voltage V 1 * of the primary side capacitor is calculated according to the following formula:
  • V 1 * the nominal voltage of the primary-side capacitor
  • V dc1 is the voltage of the input source
  • M is the number of sub-modules SM per half-bridge arm of the primary-side MMC.
  • the second stage is specifically:
  • i 1 0.5(i a +i b )
  • the stage three is specifically:
  • the first power switching tube S 1 of all sub-modules SM of the two bridge arms of the primary side MMC is turned off during the entire cycle, and the second power switching tube S 2 of all the sub-modules SM of the two bridge arms of the primary side MMC adopts phase shifting. Modulation; all sub-modules SM of the secondary side MMC are working in a locked state;
  • the nominal voltage V 2 * of the secondary side capacitor is calculated according to the following formula:
  • V 2 * the nominal voltage of the primary side capacitor
  • V dc2 is the voltage of the output source
  • N is the number of sub-modules SM per half bridge arm of the secondary side MMC.
  • the freewheeling path of the primary side MMC current is: S12 ⁇ L a1 ⁇ L s ⁇ L b1 ⁇ VD22 ⁇ S12; at this time, the power transmitted from the primary side MMC to the secondary MMC is zero.
  • the primary-side MMC current flow path is: V dc1 positive ⁇ S12 ⁇ L a1 ⁇ L s ⁇ L b2 ⁇ S24 ⁇ V dc1 negative;
  • the primary side MMC current flow path is: V dc1 positive ⁇ S22 ⁇ L b1 ⁇ L s ⁇ La2 ⁇ S14 ⁇ V dc1 negative.
  • the charging current path of the secondary side sub-module is divided into two paths, and the capacitor C22 and the capacitor C23 are charged at the same time;
  • the path for charging the capacitor C22 is: point c ⁇ L c1 ⁇ VD32 ⁇ VD41 ⁇ C22 ⁇ L d1 ⁇ point d;
  • the path to charge the capacitor C23 is: point c ⁇ L c2 ⁇ VD33 ⁇ C23 ⁇ VD44 ⁇ L d2 ⁇ point d;
  • the charging current path of the secondary side sub-module is divided into two paths, and the capacitor C21 and the capacitor C24 are charged at the same time;
  • the path for charging the capacitor C21 is: point d ⁇ L d1 ⁇ VD42 ⁇ VD31 ⁇ C21 ⁇ L c1 ⁇ point c;
  • the path to charge the capacitor C24 is: point d ⁇ L d2 ⁇ VD43 ⁇ C24 ⁇ VD34 ⁇ L c2 ⁇ point c.
  • a multi-stage soft charging control system for a multi-level DC solid-state transformer includes an input source V dc1 , an output source V dc2 , a primary side MMC, and a secondary side MMC.
  • the primary-side MMC includes multiple sub-modules SM to form an H-bridge circuit
  • the secondary-side MMC includes a plurality of sub-modules SM to form an H-bridge circuit; the primary-side MMC and the secondary-side MMC are connected through a high-frequency transformer T; the current-limiting resistor Rd and the current-limiting switch S d After parallel connection, one end is connected to the primary side MMC, and the other end is connected to the input source V dc1 ; the input source V dc1 is a direct current source; the input source V dc1 supplies power to the primary side MMC; the output source V dc2 is a direct current source Or the load is connected to the output end of the secondary side MMC.
  • the multi-stage soft charging control system includes: module one, the sub-module SM of the primary side MMC does not control the charging module; module two: using the peak current to control the sub-module SM soft charging module of the primary side MMC; module three: using phase shifting Modulate and control the sub-module SM soft charging module of the secondary side MMC.
  • the primary side MMC further includes a first bridge arm and a second bridge arm; the first bridge arm and the second bridge arm of the primary side MMC constitute an H bridge structure.
  • the first bridge arm of the primary side MMC includes an upper half bridge arm and a lower half bridge arm; the second bridge arm of the primary side MMC also includes an upper half bridge arm and a lower half bridge arm.
  • the upper half of the first bridge arm of the primary side MMC includes M sub-modules SM and an inductance La1 on the first bridge arm, and the M sub-modules SM and an inductance La1 on the first bridge arm are in turn series; lower half bridge arm of the first arm of the primary side of the MMC comprises M sub-module SM and the inductor L a2 next first bridge arm, the first arm of a half bridge arm lower side of the MMC
  • the structure of is symmetrical with the structure of the upper half of the first bridge arm of the primary side MMC; the symmetry point is point a.
  • the upper half of the second bridge arm of the primary side MMC includes M sub-modules SM and an inductance L b1 on the second bridge arm.
  • the M sub-modules SM and the inductance L b1 on the second bridge arm are in turn In series;
  • the lower half of the second leg of the primary side MMC includes M submodules SM and a second lower inductance L b2 , the lower half of the second leg of the primary side MMC
  • the structure of is symmetrical with the structure of the upper half of the second bridge arm of the primary side MMC; the symmetry point is point b.
  • the secondary side MMC includes a third bridge arm and a fourth bridge arm; the third bridge arm and the fourth bridge arm of the secondary side MMC constitute an H bridge structure.
  • the third bridge arm of the secondary side MMC includes an upper half bridge arm and a lower half bridge arm; the fourth bridge arm of the secondary side MMC also includes an upper half bridge arm and a lower half bridge arm.
  • the upper half of the third bridge arm of the secondary side MMC includes N sub-modules SM and an inductance L c1 on the third bridge arm, the N sub-modules SM and an inductance L c1 on the third bridge arm
  • the lower half of the third bridge arm of the secondary side MMC includes N sub-modules SM and a lower inductance L c2 of the third bridge arm
  • the lower half of the third bridge arm of the secondary side MMC The structure of the half bridge arm is symmetrical to the structure of the upper half bridge arm of the third bridge arm of the secondary side MMC; the symmetry point is point c.
  • the upper half of the fourth bridge arm of the secondary side MMC includes N sub-modules SM and an inductance L d1 on the fourth bridge arm, the N sub-modules SM and an inductance L d1 on the fourth bridge arm In series; the lower half of the fourth bridge arm of the secondary side MMC includes N sub-modules SM and a fourth bridge arm lower inductance L d2 , the lower half of the fourth bridge arm of the secondary side MMC
  • the structure of the half bridge arm is symmetrical to the structure of the upper half bridge arm of the fourth bridge arm of the secondary side MMC; the symmetry point is point d.
  • the four terminals of the high-frequency transformer T are respectively connected to point a, point b, point c, and point d.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

Procédé et système de commande de charge douce multiphase pour un transformateur à semi-conducteurs à courant continu (CC) multi-niveaux, qui se rapportent au domaine technique de l'électricité et de l'électronique, et permettent de trouver le moyen de réduire les pics de courant au niveau du côté courant alternatif (CA) et du côté CC lorsqu'un transformateur à semi-conducteurs à CC multi-niveaux modulaire démarre. Le procédé de commande de charge douce multiphase comprend les étapes consistant à : charger un sous-module (SM) au niveau du côté primaire MMC sans commande ; utiliser un courant de crête pour commander la charge douce du sous-module (SM) au niveau du côté primaire MMC ; et utiliser une modulation de déphasage pour commander la charge douce du sous-module (SM) au niveau du côté secondaire MMC. Le système de commande comprend : une source d'entrée (Vdc1), une source de sortie (Vdc2), un côté primaire MMC, un côté secondaire MMC, une résistance de limitation de courant (Rd), un commutateur de limitation de courant (Sd) et un transformateur haute fréquence (T). Le procédé de commande permet une charge rapide et stable d'un condensateur (C) d'un sous-module (SM) d'un transformateur à semi-conducteurs à CC multi-niveaux modulaire, réduit les pics de courant au niveau du côté CA et du côté CC lorsque le transformateur démarre, protège les dispositifs d'alimentation (S1, S2) et le transformateur haute fréquence (T) dans les sous-modules (SM), améliore la durée de vie du condensateur (C) et favorise le fonctionnement sûr du système.
PCT/CN2020/134878 2020-03-11 2020-12-09 Procédé et système de commande de charge douce multiphase pour transformateur à semi-conducteurs à courant continu multi-niveaux WO2021179707A1 (fr)

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CN202010167530.0A CN111371302B (zh) 2020-03-11 2020-03-11 一种多电平直流固态变压器多阶段软充控制方法及系统

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CN116979589A (zh) * 2023-09-20 2023-10-31 广东电网有限责任公司珠海供电局 一种柔性互联装置chb支路的启动方法及相关装置
CN117155105A (zh) * 2023-11-01 2023-12-01 国网浙江省电力有限公司电力科学研究院 一种全直流系统直流变压器启动控制方法及系统

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CN112165245A (zh) * 2020-07-31 2021-01-01 国电南瑞科技股份有限公司 一种mmc换流器启动方法及系统
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