WO2021172178A1 - 電子部品搭載用パッケージおよび電子装置 - Google Patents

電子部品搭載用パッケージおよび電子装置 Download PDF

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Publication number
WO2021172178A1
WO2021172178A1 PCT/JP2021/006248 JP2021006248W WO2021172178A1 WO 2021172178 A1 WO2021172178 A1 WO 2021172178A1 JP 2021006248 W JP2021006248 W JP 2021006248W WO 2021172178 A1 WO2021172178 A1 WO 2021172178A1
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Prior art keywords
recess
electronic component
insulating layer
layer
component mounting
Prior art date
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PCT/JP2021/006248
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English (en)
French (fr)
Inventor
菅井　広一朗
和貴 西本
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京セラ株式会社
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Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to CN202180015876.1A priority Critical patent/CN115152040A/zh
Priority to EP21761127.6A priority patent/EP4113590A4/en
Priority to US17/801,673 priority patent/US20230128491A1/en
Priority to JP2022503320A priority patent/JP7383116B2/ja
Priority to KR1020227028873A priority patent/KR20220130766A/ko
Publication of WO2021172178A1 publication Critical patent/WO2021172178A1/ja

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    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof

Definitions

  • This disclosure relates to a package for mounting electronic components and an electronic device.
  • the electronic component mounting package of the present disclosure includes a metal substrate having a first surface, a recess opened in the first surface, and a mounting portion for electronic components in the recess, and the recess on the first surface.
  • a wiring conductor located via an insulating layer is provided, and a metal oxide film is provided on at least a part of the inner surface of the recess.
  • the electronic device of the present disclosure includes an electronic component mounting package having the above configuration and an electronic component mounted in the electronic component mounting package.
  • FIG. 1A is a top view showing a package for mounting electronic components according to the first embodiment.
  • FIG. 1B is a top view showing the metal substrate of the electronic component mounting package in FIG. 1A.
  • FIG. 2A is a cross-sectional view taken along the line AA of the electronic component mounting package shown in FIG. 1A.
  • FIG. 2B is an enlarged cross-sectional view of a main part in part A of FIG. 2A.
  • FIG. 3 is a cross-sectional view showing an electronic device in which an electronic component is mounted in the package for mounting the electronic component in FIG. 1A.
  • FIG. 4A is a top view showing a package for mounting electronic components in the second embodiment.
  • FIG. 4B is a top view showing the metal substrate of the electronic component mounting package in FIG. 4A.
  • FIG. 5A is a cross-sectional view taken along the line AA of the electronic component mounting package shown in FIG. 4A.
  • FIG. 5B is an enlarged cross-sectional view of a main part
  • the electronic component mounting package 1 of the present disclosure includes a metal substrate 11 having a first surface, a recess 12 opening in the first surface, and a mounting portion 13 of the electronic component 2 in the recess 12.
  • a wiring conductor 42 located via an insulating layer 41 is provided.
  • the metal substrate 11 has a metal oxide film 12a on at least a part of the inner surface of the recess 12.
  • An insulating substrate 21 for mounting the electronic component 2 may be located in the mounting portion 13 of the recess 12.
  • the upward direction means the positive direction of the virtual z-axis. It should be noted that the distinction between the upper and lower parts in the following description is for convenience, and does not limit the upper and lower parts when the electronic component mounting package 1 and the like are actually used.
  • the metal substrate 11 has a first surface (upper surface in FIGS. 1A to 2B), a second surface (lower surface in FIGS. 1A to 2B) and a side surface opposite to the first surface in the thickness direction.
  • a material having high thermal conductivity for example, a metal material such as aluminum (Al) can be used.
  • Aluminum is lightweight and has high reflectance to light, and is therefore preferably used when applied to automobile headlamps and the like.
  • a light emitting element for UV Ultraviolet
  • it is suitable because it has excellent reflectance with respect to the light emitting element for UV and is lightweight.
  • the metal substrate 11 has a frame-shaped recess 12 which is open to the first surface and has a bottom surface, an inner side surface, and an outer surface.
  • the recess 12 functions as a support for mounting and supporting the insulating substrate 21 on the bottom surface of the recess 12.
  • the recess 12 is formed on the first surface of the metal substrate 11 by cutting, laser processing, or the like.
  • the recess 12 has a wider opening side of the recess 12 than the bottom surface side of the recess 12 (in FIGS. 1A to 2B, the opening side of the first surface of the metal substrate 11 is a recess in a plan view.
  • the inner surface of the recess 12 is inclined so as to be a square trapezoidal space larger than the bottom surface side of the 12.
  • the insulating substrate 21 has a third surface (upper surface in FIGS. 1A to 2B), a fourth surface (lower surface in FIGS. 1A to 2B) and a side surface opposite to the third surface in the thickness direction.
  • the insulating substrate 21 is composed of a single layer or a plurality of insulating layers, and the insulating substrate 21 has a rectangular shape when viewed in a plan view, that is, when viewed from a direction perpendicular to a third surface.
  • the insulating substrate 21 functions as a support for supporting the electronic component 2.
  • the insulating substrate 21 has a mounting layer 22 for mounting the electronic component 2 on the third surface side in a plan view, and a bonding layer 23 for bonding to the metal substrate 11 on the fourth surface side in a plan view. doing.
  • ceramics such as an aluminum oxide sintered body (alumina ceramics), an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
  • ceramics such as an aluminum oxide sintered body (alumina ceramics), an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
  • alumina ceramics aluminum oxide sintered body
  • an aluminum nitride material sintered body, a silicon nitride material sintered body, a mulite material sintered body, or a glass ceramics sintered body may be used.
  • the insulating substrate 21 is an organic material suitable for raw material powders such as aluminum nitride (AlN), erbium oxide (Er 2 O 3 ), and yttrium oxide (Y 2 O 3).
  • AlN aluminum nitride
  • Er 2 O 3 erbium oxide
  • Y 2 O 3 yttrium oxide
  • a binder, a solvent, etc. are added and mixed to prepare a slurry.
  • a ceramic green sheet is produced by molding the above-mentioned slurry into a sheet shape by adopting a conventionally known doctor blade method, calendar roll method, or the like. If necessary, a plurality of ceramic green sheets are laminated and fired at a high temperature (about 1800 ° C.) to produce an insulating substrate 21 composed of a single layer or a plurality of insulating layers.
  • the mounting layer 22 is located on the third surface of the insulating substrate 21 as shown in the examples of FIGS. 1A to 2B.
  • the mounting layer 22 is used as a mounting portion for the electronic component 2.
  • it is used as a connecting portion of a connecting member 3 such as a solder bump, and is for electrically connecting the electronic component 2 and the connecting pad of the module substrate.
  • the bonding layer 23 is located on the fourth surface of the insulating substrate 21 as shown in the example of FIG. 2A.
  • the bonding layer 23 is used as a bonding portion of the bonding material 31 and the like, and is for bonding the metal substrate 11 and the insulating substrate 21.
  • the mounting layer 22 and the bonding layer 23 include a thin film layer and a plating layer.
  • the thin film layer has, for example, an adhesive metal layer and a barrier layer.
  • the close contact metal layer constituting the thin film layer is formed on the third surface or the fourth surface of the insulating substrate 21.
  • the adhesive metal layer is composed of, for example, tantalum nitride, nickel-chromium, nickel-chromium-silicon, tungsten-silicon, molybdenum-silicon, tungsten, molybdenum, titanium, chromium, etc., and is composed of a vapor deposition method, an ion plating method, a sputtering method, etc.
  • the insulating substrate 21 is installed in the film forming chamber of the vacuum vapor deposition apparatus, and a metal piece to be an adhesive metal layer is arranged at the vapor deposition source in the film forming chamber. After that, the film forming chamber is put into a vacuum state (pressure of 10-2 Pa or less), and the metal pieces arranged in the vapor deposition source are heated and vapor-deposited, and the molecules of the vapor-deposited metal pieces are covered on the insulating substrate 21. By attaching, a thin film metal layer to be an adhesive metal layer is formed.
  • a resist pattern is formed on the insulating substrate 21 on which the thin film metal layer is formed by a photolithography method, and then the excess thin film metal layer is removed by etching to form an adhesive metal layer.
  • a barrier layer is adhered to the upper surface of the adhesive metal layer, and the barrier layer has good bondability and wettability between the adhesive metal layer and the plating layer. It acts to prevent mutual diffusion with the layers.
  • the barrier layer is made of, for example, nickel-chromium, platinum, palladium, nickel, cobalt, etc., and is adhered to the surface of the adhesion metal layer by a thin film forming technique such as a thin film deposition method, an ion plating method, or a sputtering method.
  • the thickness of the adhesive metal layer should be about 0.01 to 0.5 ⁇ m. If it is less than 0.01 ⁇ m, it tends to be difficult to firmly adhere the adhesive metal layer on the insulating substrate 21. If it exceeds 0.5 ⁇ m, the adhesive metal layer is likely to be peeled off due to the internal stress during film formation of the adhesive metal layer.
  • the thickness of the barrier layer is preferably about 0.05 to 1 ⁇ m. If it is less than 0.05 ⁇ m, defects such as pinholes tend to occur, making it difficult to function as a barrier layer. If it exceeds 1 ⁇ m, the barrier layer is likely to be peeled off due to the internal stress during film formation.
  • the plating layer is adhered to the exposed surface of the thin film layer by an electrolytic plating method or an electroless plating method.
  • the plating layer is made of a metal such as nickel, copper, gold or silver, which has excellent corrosion resistance and connectivity with the connecting member 3.
  • the plating layer and the plating layer are sequentially adhered. As a result, the mounting layer 22 and the bonding layer 23 can be effectively prevented from corroding, and the bonding between the mounting layer 22 and the connecting member 3 and the bonding between the bonding layer 23 and the metal substrate 11 can be strengthened.
  • a metal layer such as copper (Cu) or gold (Au) may be arranged on the barrier layer so that the plating layer can be formed well.
  • the metal layer is formed by the same method as the thin film layer.
  • the bonding material 31 is located between the bottom surface of the recess 12 of the metal substrate 11 and the surface opposite to the mounting surface of the insulating substrate 21, and joins the bottom surface of the recess 12 of the metal substrate 11 and the bonding layer 23 of the insulating substrate 21. doing.
  • the insulating layer 41 is located around the recess 12 of the metal substrate 11.
  • the insulating layer 41 has a wiring conductor 42 on the fifth surface (upper surface in FIGS. 1A to 2B), and serves as a region for electrically connecting to the electrodes of the electronic component 2.
  • a plating layer may also be formed on the exposed surface of the wiring conductor 42.
  • the same ceramics as the insulating substrate 21 may be used, or a resin may be used.
  • the metal substrate 11 has a metal oxide film 12a on the inner surface of the recess 12 as shown in the example shown in FIG. 2B.
  • the metal oxide film 12a is formed of, for example, aluminum oxide.
  • the metal oxide film 12a is formed to have a thickness of about 0.1 nm to 10 nm.
  • the inner surface of the recess 12 is oxidized after forming the recess 12 in the metal substrate 11.
  • a bonding material 31 such as solder is placed on the bottom surface of the recess 12, and energy such as ultrasonic waves is applied to the bottom surface of the recess 12 to join the insulating substrate 21 to the bottom surface of the recess 12.
  • the insulating layer 41 is ceramic, for example, it is bonded to the metal substrate 11 in the same manner as the insulating substrate 21 by using the same material as the bonding material 31.
  • the electronic component 2 can be mounted on the third surface of the insulating substrate 21 of the electronic component mounting package 1 to manufacture an electronic device.
  • the electronic component 2 mounted on the electronic component mounting package 1 is, for example, a light emitting element such as an LED (Light Emitting Diode) for UV.
  • a light emitting element such as an LED (Light Emitting Diode) for UV.
  • the electronic component 2 is a wire bonding type electronic component 2
  • the electronic component 2 is fixed on the insulating substrate 21 by a joining member such as a low melting point brazing material or a conductive resin, and then the electronic component 2 is fixed on the insulating substrate 21.
  • the electrode of the electronic component 2 and the wiring conductor 42 of the insulating layer 41 are electrically connected via a connecting member 3 such as a bonding wire, so that the electronic component 2 is mounted on the electronic component mounting package 1. Further, after the electrodes of the electronic component 2 and the mounting layer 22 are electrically connected, the mounting layer 22 and the wiring conductor 42 of the insulating layer 41 are electrically connected to be mounted on the electronic component mounting package 1. .. Further, for example, when the electronic component 2 is a flip-chip type electronic component 2, the electronic component 2 is via a connecting member 3 such as a solder bump, a gold bump, or a conductive resin (anisometric conductive resin or the like).
  • a connecting member 3 such as a solder bump, a gold bump, or a conductive resin (anisometric conductive resin or the like).
  • the mounting layer 22 and the wiring conductor 42 of the insulating layer 41 are electrically connected to form the electronic component mounting package 1. It will be installed.
  • a connecting member 3 such as a bonding wire is used, a bonding wire made of aluminum or the like may be used.
  • a plurality of electronic components 2 may be mounted on the third surface of the insulating substrate 21. Further, the electronic component 2 is sealed with a sealing material made of glass or the like, or with a lid made of glass, ceramics, metal or the like, if necessary.
  • the metal substrate 11 having the first surface, the recess 12 opened in the first surface, and the mounting portion 13 of the electronic component 2 in the recess 12, and the first
  • a wiring conductor 42 located via an insulating layer 41 is provided, and a metal oxide film 12a is provided on at least a part of the inner surface of the recess 12.
  • the insulating layer 41 is made of resin, it is easily affected by heat, so that it is easier to obtain the effect that the insulating layer 41 is less likely to deteriorate due to the above configuration, and the same applies to the following disclosure.
  • the metal oxide film 12a is located from the opening of the recess 12 on the inner surface of the recess 12 to the height of the mounting portion 13.
  • the metal oxide film 12a is located along the length direction of the insulating layer 41.
  • the metal oxide film 12a makes it more difficult for heat to be generated, and the heat is transferred to the insulating layer 41. It becomes difficult to transmit and the insulating layer 41 is less likely to deteriorate. As a result, it can be used for a long period of time.
  • the inner surface of the recess 12 is inclined so that the opening of the recess 12 is located outside the boundary between the bottom surface of the recess 12 and the inner surface connected to the bottom surface.
  • the metal oxide film 12a further extends to the insulating layer 41 as shown in the example shown in FIG. 2B. With the above configuration, it becomes difficult for heat to be transferred to the insulating layer 41, and the insulating layer 41 is less likely to deteriorate. As a result, it can be used for a long period of time.
  • the metal oxide film 12a may be further located between the insulating layer 41 and the metal substrate 11 as in the example shown in FIG. 2B. With the above configuration, the bond between the metal oxide film 12a and the insulating layer 41 becomes stronger, and it can be used for a long period of time.
  • the metal oxide film 12a is located so as to overlap the entire insulating layer 41 in a plan view.
  • the insulating layer 41 is located in the stepped portion 11b located on the first surface of the metal substrate 11, as in the examples shown in FIGS. 1A to 2B.
  • the electronic component mounting package 1 of the second embodiment differs from the electronic component mounting package 1 of the above-described embodiment in that the metal substrate 11 has a first surface between the opening in the recess 12 and the insulating layer 41.
  • the metal oxide film 12a has a protruding portion 11a protruding from the recess 12 and is located from the inner side surface of the recess 12 to the protruding portion 11a.
  • the first surface, the recess 12 opening on the first surface, and the recess 12 are contained.
  • a metal substrate 11 having a mounting portion 13 of an electronic component 2 and a wiring conductor 42 located via an insulating layer 41 in addition to the opening of the recess 12 on the first surface are provided, and at least one of the inner surfaces of the recess 12 is provided. It has a metal oxide film 12a in the portion.
  • the metal oxide film 12a covers the protruding portion 11a. According to the above configuration, when the light emitting element is used as the electronic component 2, even if the emitted light is further irradiated to the protruding portion 11a, the protruding portion 11a is closer to the insulating layer 41 than the inner surface of the recess 12 and the opening of the recess 12. At the position, the protrusion 11a and the metal oxide film 12a make it difficult for heat to be generated, and the heat is less likely to be transferred to the insulating layer 41 more effectively, so that the insulating layer 41 is less likely to deteriorate. .. As a result, it can be used for a long period of time.
  • the height of the protruding portion 11a from the first surface is equal to or greater than the thickness of the insulating layer 41.
  • the protruding portion 11a has a step.
  • the metal oxide film 12a has a long path that makes it difficult for heat to be generated, and the heat is more effective. Therefore, it is difficult for the insulating layer 41 to be transmitted to the insulating layer 41, and the insulating layer 41 is less likely to be deteriorated. As a result, it can be used for a long period of time.
  • the depth of the insulating layer 41 in the step portion 11b located on the first surface of the metal substrate 11 is larger than the thickness of the insulating layer 41.
  • the insulating layer 41 is located away from the side surface of the step portion 11b.
  • the outer edge side of the step portion 11b where the insulating layer 41 is located is open.
  • the electronic component mounting package 1 of the second embodiment can be manufactured by using the same manufacturing method as the electronic component mounting package 1 of the above-described embodiment.
  • the present invention is not limited to the example of the above-described embodiment, and various modifications can be made.
  • the insulating substrate 21 may have a rectangular shape having notches or chamfers on the side surfaces or corners in a plan view.
  • the recess 12 is formed as a square trapezoidal space having a large opening side on the first surface of the metal substrate 11 in the electronic component mounting package 1 and the second electronic component mounting package 1 of the first embodiment. However, it may be formed as a truncated cone-shaped space having a large opening side on the first surface of the metal substrate 11. Further, it may be formed as a rectangular parallelepiped space on the first surface of the metal substrate 11. The recess 12 is formed on the first surface of the metal substrate 11 so that the opening side is large, as in the electronic component mounting package 1 of the first embodiment and the electronic component mounting package 1 of the second embodiment. Then, the light of the light emitting element mounted on the insulating substrate 21 can be satisfactorily emitted to the outside.
  • the package 1 for mounting electronic components in the above-described embodiment has one recess 12 on the first surface of the metal substrate 11 and an insulating substrate 21 in the recess 12, but the first surface of the metal substrate 11 has an insulating substrate 21.
  • a package 1 for mounting an electronic component may be formed in which a plurality of recesses 12 are formed and an insulating substrate 21 is bonded to the bottom surface of each recess 12 via a bonding material 31.
  • the electronic component 2 may be mounted on the insulating substrate 21 mounted on the bottom surface of each recess 12.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

電子部品搭載用パッケージ１は、第１面と、第１面に開口する凹部12と、凹部12内に電子部品２の搭載部とを有する金属基体11と、第１面における凹部12の開口以外に、絶縁層41を介して位置する配線導体42と、を備え、凹部12の内側面の少なくとも一部に金属酸化膜12ａを有している。

Description

電子部品搭載用パッケージおよび電子装置
　本開示は、電子部品搭載用パッケージおよび電子装置に関する。
　従来、電子部品として発光素子を用いる場合、凹部を有する電子部品搭載用基板が用いられている（例えば、特開２０１３－１２２１８９号公報を参照。）。
　本開示の電子部品搭載用パッケージは、第１面と、該第１面に開口する凹部と、該凹部内に電子部品の搭載部とを有する金属基体と、前記第１面における前記凹部の前記開口以外に、絶縁層を介して位置する配線導体と、を備え、前記凹部の内側面の少なくとも一部に金属酸化膜を有する。
　本開示の電子装置は、上記構成の電子部品搭載用パッケージと、該電子部品搭載用パッケージに搭載された電子部品と、を有している。
図１Ａは、第１の実施形態における電子部品搭載用パッケージを示す上面図である。 図１Ｂは、図１Ａにおける電子部品搭載用パッケージの金属基体を示す上面図である。 図２Ａは、図１Ａに示した電子部品搭載用パッケージのＡ－Ａ線における断面図である。 図２Ｂは、図２ＡのＡ部における要部拡大断面図である。 図１Ａの電子部品搭載用パッケージに電子部品を搭載した電子装置を示す断面図である。 図４Ａは、第２の実施形態における電子部品搭載用パッケージを示す上面図である。 図４Ｂは、図４Ａにおける電子部品搭載用パッケージの金属基体を示す上面図である。 図５Ａは、図４Ａに示した電子部品搭載用パッケージのＡ－Ａ線における断面図である。 図５Ｂは、図５ＡのＡ部における要部拡大断面図である。
　本開示のいくつかの例示的な実施形態について、添付の図面を参照しつつ説明する。
　（第１の実施形態）
　本実施形態における本開示の電子部品搭載用パッケージ１は、第１面と、第１面に開口する凹部12と、凹部12内に電子部品２の搭載部13とを有する金属基体11と、第１面における凹部12の開口以外に、絶縁層41を介して位置する配線導体42と、を備えている。金属基体11は、凹部12の内側面の少なくとも一部に金属酸化膜12ａを有している。凹部12の搭載部13には、電子部品２を搭載するための絶縁基板21が位置してもよい。図１Ａ～図３において、上方向とは、仮想のｚ軸の正方向のことをいう。なお、以下の説明における上下の区別は便宜的なものであり、実際に電子部品搭載用パッケージ１等が使用される際の上下を限定するものではない。
　金属基体11は、第１面（図１Ａ～図２Ｂでは上面）および第１面と厚み方向で反対側に第２面（図１Ａ～図２Ｂでは下面）と、側面とを有している。金属基体11は、熱伝導率の高い材料、例えば、アルミニウム（Ａｌ）等の金属材料を用いることができる。アルミニウムは、軽量で、光に対する反射率が高いので、自動車のヘッドランプ等に適用される場合、好適に用いられる。また、電子部品２としてＵＶ（Ｕｌｔｒａｖｉｏｌｅｔ）用の発光素子を用いる場合、ＵＶ用の発光素子に対する反射率に優れ、軽量であるという点から好適なものとなる。
　金属基体11は、図１Ａ～図２Ｂの例に示すように、第１面に開口し、底面および内側面および外側面を有する枠状の凹部12を有している。凹部12は、凹部12の底面に絶縁基板21を搭載して支持するための支持体として機能する。凹部12は、金属基体11の第１面に、切削加工、レーザー加工等を行うことにより形成される。
　凹部12は、図１Ａ～図２Ｂに示す例において、凹部12の底面側よりも凹部12の開口側が広くなる（図１Ａ～図２Ｂでは、平面視で金属基体11の第１面の開口側が凹部12の底面側よりも大きい四角台形状の空間）ように、凹部12の内側面が傾斜している。
　絶縁基板21は、第３面（図１Ａ～図２Ｂでは上面）および第３面と厚み方向で反対側に第４面（図１Ａ～図２Ｂでは下面）と、側面とを有している。絶縁基板21は、単層または複数の絶縁層からなり、絶縁基板21は、平面視すなわち第３面に垂直な方向から見ると方形状を有している。絶縁基板21は、電子部品２を支持するための支持体として機能する。絶縁基板21は、平面視にて第３面側に電子部品２を搭載するための搭載層22と、平面視にて第４面側に金属基体11と接合するための接合層23とを有している。
　絶縁基板21は、例えば、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，窒化珪素質焼結体、ムライト質焼結体またはガラスセラミックス焼結体等のセラミックスを用いることができる。絶縁基板21は、例えば、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，窒化珪素質焼結体、ムライト質焼結体またはガラスセラミックス焼結体等のセラミックスを用いることができる。絶縁基板21は、例えば窒化アルミニウム質焼結体である場合であれば、窒化アルミニウム（ＡｌＮ），酸化エルビニウム（Ｅｒ２Ｏ３）、酸化イットリウム（Ｙ２Ｏ３）等の原料粉末に適当な有機バインダーおよび溶剤等を添加混合して泥漿物を作製する。上記の泥漿物を、従来周知のドクターブレード法またはカレンダーロール法等を採用してシート状に成形することによってセラミックグリーンシートを作製する。必要に応じて、セラミックグリーンシートを複数枚積層し、高温（約1800℃）で焼成することによって、単層または複数の絶縁層からなる絶縁基板21が製作される。
　搭載層22は、図１Ａ～図２Ｂの例に示すように、絶縁基板21の第３面に位置している。搭載層22は、電子部品２の搭載部として用いられる。または、はんだバンプ等の接続部材３の接続部として用いられ、電子部品２とモジュール用基板の接続パッドとを電気的に接続するためのものである。
　接合層23は、図２Ａの例に示すように、絶縁基板21の第４面に位置している。接合層23は、接合材31等の接合部として用いられ、金属基体11と絶縁基板21とを接合するためのものである。
　搭載層22および接合層23は、薄膜層およびめっき層とを含んでいる。薄膜層は、例えば、密着金属層とバリア層とを有している。薄膜層を構成する密着金属層は、絶縁基板21の第３面または第４面に形成される。密着金属層は、例えば、窒化タンタル、ニッケル－クロム、ニッケル－クロムーシリコン、タングステン－シリコン、モリブデン－シリコン、タングステン、モリブデン、チタン、クロム等から成り、蒸着法、イオンプレーティング法、スパッタリング法等の薄膜形成技術を採用することにより、絶縁基板21の第３面または第４面に被着される。例えば真空蒸着法を用いて形成する場合には、絶縁基板21を真空蒸着装置の成膜室内に設置して、成膜室内の蒸着源に密着金属層と成る金属片を配置する。その後、成膜室内を真空状態（１０－２Ｐａ以下の圧力）にするとともに、蒸着源に配置された金属片を加熱して蒸着させ、上記の蒸着した金属片の分子を絶縁基板21に被着させることにより、密着金属層と成る薄膜金属の層を形成する。そして、薄膜金属層が形成された絶縁基板21にフォトリソグラフィ法を用いてレジストパターンを形成した後、エッチングによって余分な薄膜金属層を除去することにより、密着金属層が形成される。密着金属層の上面にはバリア層が被着され、バリア層は密着金属層とめっき層と接合性、濡れ性が良く、密着金属層とめっき層とを強固に接合させるとともに密着金属層とめっき層とが相互拡散し難くする作用をなす。バリア層は、例えば、ニッケルークロム、白金、パラジウム、ニッケル、コバルト等から成り、蒸着法、イオンプレーティング法、スパッタリング法等の薄膜形成技術により密着金属層の表面に被着される。
　密着金属層の厚さは0.01～0.5μｍ程度が良い。0.01μｍ未満では、絶縁基板21上に密着金属層を強固に密着させることが困難となる傾向がある。0.5μｍを超える場合は密着金属層の成膜時の内部応力によって密着金属層の剥離が生じ易くなる。また、バリア層の厚さは0.05～１μｍ程度が良い。0.05μｍ未満では、ピンホール等の欠陥が発生してバリア層としての機能を果たしにくくなる傾向がある。１μｍを超える場合は、成膜時の内部応力によりバリア層の剥離が生じ易くなる。
　めっき層は、電解めっき法または無電解めっき法によって、薄膜層の露出した表面に被着される。めっき層は、ニッケル，銅，金または銀等の耐食性、接続部材３との接続性に優れる金属から成るものであり、例えば、厚さ0.5～５μｍ程度のニッケルめっき層と0.1～３μｍ程度の金めっき層とが順次被着される。上記によって、搭載層22および接合層23が効果的に腐食し難くできるとともに、搭載層22と接続部材３との接合、接合層23と金属基体11との接合を強固にできる。
　また、バリア層上に、銅（Ｃｕ）、金（Ａｕ）等の金属層を配置し、めっき層が良好に形成されるようにしても構わない。上記の金属層は、薄膜層と同様な方法により形成される。
　接合材31は、金属基体11の凹部12の底面と絶縁基板21の搭載面との反対面との間に位置し、金属基体11の凹部12の底面と絶縁基板21の接合層23とを接合している。
　絶縁層41は、金属基体11の凹部12の周囲に位置している。絶縁層41は、第５面（図１Ａ～図２Ｂでは上面）に配線導体42を有しており、電子部品２の電極と電気的に接続するための領域となる。配線導体42の露出する表面にもめっき層を形成していても良い。絶縁層41は、例えば、絶縁基板21と同様のセラミックスを用いても良いし、樹脂を用いても良い。
　金属基体11は、図２Ｂに示す例のように、凹部12の内面に金属酸化膜12ａ有している。金属基体11が、例えば、アルミニウムからなる場合、金属酸化膜12ａは、例えば、酸化アルミニウムから形成される。金属酸化膜12ａは、0.1nｍ～10nｍ程度の厚みに形成される。
　例えば、金属基体11がアルミニウムからなり、金属酸化膜12ａが酸化アルミニウムからなる場合、金属基体11に凹部12を形成した後、凹部12の内面を酸化させる。その後、例えば、凹部12の底面にハンダ等の接合材31を載置し、凹部12の底面に超音波などのエネルギーを付与して、絶縁基板21を凹部12の底面に接合する。また、絶縁層41がセラミックスの場合、例えば、接合材31と同様の材料を用いて、絶縁基板21と同様の方法で金属基体11に接合される。
　電子部品搭載用パッケージ１の絶縁基板21の第３面に電子部品２を搭載し、電子装置を作製できる。電子部品搭載用パッケージ１に搭載される電子部品２は、例えば、ＵＶ用のＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎｇ　Ｄｉｏｄｅ）等の発光素子である。また、例えば、電子部品２がワイヤボンディング型の電子部品２である場合には、電子部品２は、低融点ろう材または導電性樹脂等の接合部材によって、絶縁基板21上に固定された後、ボンディングワイヤ等の接続部材３を介して電子部品２の電極と絶縁層41の配線導体42とが電気的に接続されることによって電子部品搭載用パッケージ１に搭載される。また、電子部品２の電極と搭載層22とを電気的に接続した後、搭載層22と絶縁層41の配線導体42とが電気的に接続することによって電子部品搭載用パッケージ１に搭載される。また、例えば、電子部品２がフリップチップ型の電子部品２である場合には、電子部品２は、はんだバンプ、金バンプまたは導電性樹脂（異方性導電樹脂等）等の接続部材３を介して、電子部品２の電極と搭載層22とが電気的および機械的に接続した後、搭載層22と絶縁層41の配線導体42とが電気的に接続することによって電子部品搭載用パッケージ１に搭載される。ボンディングワイヤ等の接続部材３を用いる場合は、アルミニウムからなるボンディングワイヤ等を用いてもよい。
　また、絶縁基板21の第３面に、複数の電子部品２を搭載してもよい。また、電子部品２は必要に応じて、ガラス等からなる封止材を用いて、あるいは、ガラス、セラミックスまたは金属等からなる蓋体等により封止される。
　本実施形態の電子部品搭載用パッケージ１によれば、第１面と、第１面に開口する凹部12と、凹部12内に電子部品２の搭載部13とを有する金属基体11と、第１面における凹部12の開口以外に、絶縁層41を介して位置する配線導体42と、を備え、凹部12の内側面の少なくとも一部に金属酸化膜12ａを有している。上記構成により、電子部品２として発光素子を用いる場合、発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによって熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。絶縁層41が樹脂の場合、熱による影響を受けやすいため、上記の構成によって絶縁層41が劣化し難くなる効果をより得やすく、下記の開示においても同様である。
　金属酸化膜12ａは、凹部12の内側面における凹部12の開口から搭載部13の高さにかけて位置している。上記構成により、縦断面視にて、発光素子と絶縁層41との間において、搭載部13の側方から凹部12の開口にかけて、発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによって熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、絶縁層41の長さ方向に沿って、金属酸化膜12ａが位置している。上記構成により、絶縁層41の長さ方向の全体にわたって発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによって効果的に熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、凹部12の全周にわたって、凹部12の内側面における凹部12の開口から搭載部13の高さにかけて位置している。上記構成により、凹部12の全周にわたって発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによってより効果的に熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　凹部12の内側面は、凹部12の開口が、凹部12における底面と該底面に繋がる内側面との境より外側に位置するように傾斜している。上記構成により、凹部12の開口側において、発光した光が凹部12の開口側の内側面でより斜めに照射され、開口側において熱がより発生し難くなりやすいものとなり、熱が絶縁層41により伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　金属酸化膜12ａは、図２Ｂに示す例のように、更に絶縁層41まで亘っている。上記構成により、絶縁層41に伝熱し難くなり、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。なお、金属酸化膜12ａは、図２Ｂに示す例のように、更に絶縁層41と金属基体11との間まで位置してもよい。上記の構成により、金属酸化膜12ａと絶縁層41との接合がより強いものとなり、長期間にわたって使用することができるものとすることができる。
　また、金属酸化膜12ａは、平面視において、絶縁層41全体と重なるように位置している。上記構成により、絶縁層41全体に伝熱し難くなり、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、絶縁層41は、図１Ａ～図２Ｂに示す例のように、金属基体11の第１面に位置する段差部11ｂ内に位置している。上記構成により、発光素子の光が直接絶縁層41に照射され難くし、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　（第２の実施形態）
　次に、第２の実施形態による電子部品搭載用パッケージ１について、図４Ａ～図５Ｂを参照しつつ説明する。
　第２の実施形態における電子部品搭載用パッケージ１において、上記した実施形態の電子部品搭載用パッケージ１と異なる点は、金属基体11が、凹部12における開口と絶縁層41との間に第１面から突出する突出部11ａを有し、金属酸化膜12ａが、凹部12の内側面から突出部11ａにかけて位置する点である。上記構成により、電子部品２として発光素子を用いる場合、例えば発光した光が更に突出部11ａに照射されても、金属酸化膜12ａによって熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　第２の実施形態における電子部品搭載用パッケージ１によれば、上記した実施形態の電子部品搭載用パッケージ１と同様に、第１面と、第１面に開口する凹部12と、凹部12内に電子部品２の搭載部13とを有する金属基体11と、第１面における凹部12の開口以外に、絶縁層41を介して位置する配線導体42と、を備え、凹部12の内側面の少なくとも一部に金属酸化膜12ａを有している。上記構成により、電子部品２として発光素子を用いる場合、発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによって熱が発生し難くなりやすいものとなり、熱が絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　金属酸化膜12ａは、突出部11ａを覆っている。上記構成により、電子部品２として発光素子を用いる場合、発光した光が更に突出部11ａに照射されても、突出部11ａが、凹部12の内側面および凹部12の開口よりも絶縁層41に近い位置で、突出部11ａおよび金属酸化膜12ａによって、熱が発生し難くなりやすいものとなっており、熱がより効果的に絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、第１面からの突出部11ａの高さは、絶縁層41の厚み以上である。上記構成により、第１面と段差部11ｂの底面とが同一面の場合に、例えば発光した光が直接絶縁層41に照射されにくいものとなり、絶縁層41が効果的に劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。絶縁層41が樹脂の場合、光による影響を受けやすいため、上記の構成によって絶縁層41が劣化し難くなる効果をより得やすく、下記の開示においても同様である。
　また、突出部11ａは、図５Ａ、図５Ｂに示す例のように、突出部11ａが段差を有する。上記構成により、電子部品２として発光素子を用いる場合、発光した光が凹部12の内側面に照射されても、金属酸化膜12ａによって熱が発生し難くなる経路が長いものとなり、熱がより効果的に絶縁層41に伝わり難いものとなって絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、絶縁層41は、図５Ａ、図５Ｂに示す例のように、金属基体11の第１面に位置する段差部11ｂ内の深さが、絶縁層41の厚みよりも大きい。上記構成により、発光素子の光が直接絶縁層41に照射され難くなり、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、図４Ａ～図５Ｂに示す例のように、絶縁層41は、段差部11ｂの側面から離れて位置している。上記構成により、より絶縁層41に伝熱され難くなり、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　また、図４Ａ～図５Ｂに示す例のように、絶縁層41が位置する段差部11ｂの外縁側が開放されている。上記構成により、段差部11ｂ内に熱が留まりにくくなり、絶縁層41が劣化し難くなる。その結果、長期間にわたって使用することができるものとすることができる。
　第２の実施形態の電子部品搭載用パッケージ１は、その他は上述の実施形態の電子部品搭載用パッケージ１と同様の製造方法を用いて製作することができる。
　本発明は、上述の実施の形態の例に限定されるものではなく、種々の変更は可能である。例えば、絶縁基板21は、平面視において側面または角部に、切欠きまたは面取りを有している矩形状であっても構わない。
　また、凹部12は、第１の実施形態の電子部品搭載用パッケージ１および第２の電子部品搭載用パッケージ１において、金属基体11の第１面に開口側が大きい四角台形状の空間として形成されているが、金属基体11の第１面に開口側が大きい円錐台形状の空間として形成していても構わない。また、金属基体11の第１面に直方体形状の空間として形成していても構わない。凹部12は、第１の実施形態の電子部品搭載用パッケージ１および第２の実施形態の電子部品搭載用パッケージ１のように、金属基体11の第１面に開口側が大きくなるように形成していると、絶縁基板21に搭載した発光素子の光を外部に良好に放出することができる。
　また、上述の実施形態における電子部品搭載用パッケージ１は、金属基体11の第１面に１つの凹部12と凹部12内に絶縁基板21を有しているが、金属基体11の第１面に複数の凹部12を形成し、それぞれの凹部12の底面に絶縁基板21が接合材31を介して接合された電子部品搭載用パッケージ１であっても構わない。上記の場合、それぞれの凹部12の底面に載置された絶縁基板21上に電子部品２が搭載してもよい。
１・・・・電子部品搭載用パッケージ
11・・・・金属基体
11ａ・・・突出部
12・・・・凹部
12ａ・・・金属酸化膜
13・・・・搭載部
21・・・・絶縁基板
22・・・・搭載層
23・・・・接合層
31・・・・接合材
２・・・・電子部品
３・・・・接続部材
41・・・・絶縁層
42・・・・配線導体

Claims (8)

  1. 　第１面と、該第１面に開口する凹部と、該凹部内に電子部品の搭載部とを有する金属基体と、
    　前記第１面における前記凹部の前記開口以外に、絶縁層を介して位置する配線導体と、
    　を備え、
    　前記凹部の内側面の少なくとも一部に金属酸化膜を有する、電子部品搭載用パッケージ。
  2. 　前記金属酸化膜は、前記凹部の内側面における前記凹部の前記開口から前記搭載部の高さにかけて位置する、請求項１に記載の電子部品搭載用パッケージ。
  3. 　前記凹部の内側面は、前記凹部の前記開口が、前記凹部における底面と該底面に繋がる前記内側面との境より外側に位置するように傾斜する、請求項１または請求項２に記載の電子部品搭載用パッケージ。
  4. 　前記凹部における前記開口と前記絶縁層との間に前記第１面から突出する突出部を有し、
    　前記金属酸化膜が、前記凹部の内側面から前記突出部にかけて位置する、請求項１乃至請求項３のいずれかに記載の電子部品搭載用パッケージ。
  5. 　前記金属酸化膜は、前記突出部を覆っている、請求項４に記載の電子部品搭載用パッケージ。
  6. 　前記金属酸化膜は、更に前記絶縁層まで亘っている、請求項５に記載の電子部品搭載用パッケージ。
  7. 　前記第１面からの前記突出部の高さは、前記絶縁層の厚み以上である、請求項１乃至請求項６のいずれかに記載の電子部品搭載用パッケージ。
  8. 　請求項１乃至請求項７のいずれかに記載の電子部品搭載用パッケージと、
    該電子部品搭載用パッケージに搭載された電子部品と、を有している電子装置。
PCT/JP2021/006248 2020-02-26 2021-02-19 電子部品搭載用パッケージおよび電子装置 WO2021172178A1 (ja)

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US20100301359A1 (en) * 2009-05-26 2010-12-02 Ming-Hsiung Liu Light Emitting Diode Package Structure
JP2012009582A (ja) * 2010-06-24 2012-01-12 Sanyo Electric Co Ltd 発光モジュールおよびその製造方法
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JP2012517697A (ja) * 2009-02-17 2012-08-02 ポイント エンジニアリング カンパニー，リミテッド 光素子用基板、これを有する光素子パッケージおよびその製造方法
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