WO2021153361A1 - Procédé pour retirer une puce semi-conductrice avec un film de protection - Google Patents

Procédé pour retirer une puce semi-conductrice avec un film de protection Download PDF

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Publication number
WO2021153361A1
WO2021153361A1 PCT/JP2021/001743 JP2021001743W WO2021153361A1 WO 2021153361 A1 WO2021153361 A1 WO 2021153361A1 JP 2021001743 W JP2021001743 W JP 2021001743W WO 2021153361 A1 WO2021153361 A1 WO 2021153361A1
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Prior art keywords
protective film
adhesive layer
pressure
sensitive adhesive
film
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PCT/JP2021/001743
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English (en)
Japanese (ja)
Inventor
拓 根本
桜子 田村
健太 古野
遥 古賀
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リンテック株式会社
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Priority to CN202180010299.7A priority Critical patent/CN115023801A/zh
Priority to JP2021574662A priority patent/JPWO2021153361A1/ja
Priority to KR1020227025106A priority patent/KR20220131915A/ko
Publication of WO2021153361A1 publication Critical patent/WO2021153361A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the present invention relates to a method for peeling a semiconductor chip with a protective film.
  • semiconductor devices have been manufactured using a mounting method called a face-down method.
  • a semiconductor chip having an electrode such as a bump on the circuit surface is used, and the electrode is bonded to the substrate. Therefore, the surface of the semiconductor chip opposite to the circuit surface (hereinafter, also referred to as “back surface of the semiconductor chip”) may be exposed.
  • the back surface of the exposed semiconductor chip is protected by a protective film containing an organic material as a main component, and may be incorporated into a semiconductor device as a semiconductor chip with a protective film.
  • a semiconductor chip with a protective film can be obtained by dicing a semiconductor wafer with a protective film into individual pieces.
  • dicing of a semiconductor wafer with a protective film is performed in a state where the protective film side of the semiconductor wafer with a protective film is attached to an adhesive layer. Therefore, the semiconductor chip with a protective film obtained after dicing is in a state of being attached to the pressure-sensitive adhesive layer.
  • the semiconductor chip with a protective film is peeled off from the pressure-sensitive adhesive layer and subjected to the next step.
  • a method of peeling a semiconductor chip from a pressure-sensitive adhesive layer for example, a method using a heat-release type pressure-sensitive adhesive sheet in which a pressure-sensitive adhesive layer containing heat-expandable fine particles is provided on at least one surface of a base material is known. Has been done.
  • the adherend such as a semiconductor chip attached to the pressure-sensitive adhesive sheet
  • the heat-expandable fine particles of the pressure-sensitive adhesive layer are expanded by heating to reduce the contact area between the adherend and the pressure-sensitive adhesive layer.
  • the adhesive force between the pressure-sensitive adhesive layer and the adherend is lowered, and the adherend is peeled off from the pressure-sensitive adhesive sheet (see, for example, Patent Document 1).
  • the heat-release type pressure-sensitive adhesive sheet described in Patent Document 1 is generally used in a manner in which the entire surface of the pressure-sensitive adhesive layer is heat-treated to reduce the adhesive force with an adherend on the entire surface of the pressure-sensitive adhesive layer. .. That is, it is used in a mode in which the adherend is collectively peeled off from the pressure-sensitive adhesive layer.
  • the adherend is a semiconductor chip with a protective film
  • the adhesive strength with the semiconductor chip with a protective film is reduced on the entire surface of the pressure-sensitive adhesive layer, it occurs when only a part of the semiconductor chips with a protective film is selectively picked up and moved.
  • the remaining semiconductor chip with a protective film that is not picked up is misaligned or peeled off from the adhesive layer due to vibration or the like.
  • the present invention selectively reduces the adhesive force with the pressure-sensitive adhesive layer with respect to only some of the semiconductor chips with a protective film attached to the pressure-sensitive adhesive layer.
  • An object of the present invention is to provide a method for peeling a semiconductor chip with a protective film.
  • the present inventors have found that the above problems can be solved by positively using the protective film provided in the semiconductor chip with a protective film. Specifically, it has been found that the above problems can be solved by sublimating at least a part of the protective film of the semiconductor chip with a protective film to be peeled off to generate gas and reducing the adhesive force with the adhesive layer. Further various studies have been carried out to complete the present invention.
  • a method for peeling a semiconductor chip with a protective film which comprises the following steps (S1) and the following steps (S2).
  • S1 A step of attaching a plurality of semiconductor chips with a protective film to the pressure-sensitive adhesive layer (X1) with the protective film side as an attachment surface.
  • S2 The plurality of semiconductor chips with a protective film.
  • at least a part of the protective film of a part of the semiconductor chip with a protective film is sublimated to generate gas, and the adhesive force between the part of the semiconductor chip with a protective film and the pressure-sensitive adhesive layer (X1) is increased.
  • Step [2] The peeling method according to the above [1], wherein the step (S1) includes the following steps (S1-1) to (S1-2) in this order.
  • -Step (S1-1) A step of attaching the semiconductor wafer with a protective film to the pressure-sensitive adhesive layer (X1) with the protective film side as the attachment surface.
  • -Step (S1-2) The semiconductor wafer with the protective film.
  • Step [3] The semiconductor wafer with a protective film in the step (S1-1) in the step (S1-1) forms the protective film after the protective film forming film is attached to the semiconductor wafer.
  • the peeling method according to the above [2] which is obtained by curing the film.
  • the step (S1-1) is a laminate for forming a protective film in which a protective film-forming film is laminated on the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X) having the pressure-sensitive adhesive layer (X1).
  • the peeling method according to the above [2] which is performed by attaching a semiconductor wafer to the protective film-forming film side and then curing the protective film-forming film.
  • the protective film of the semiconductor chip with a protective film is used as a protective film capable of absorbing laser light.
  • Step (S2) according to any one of the above [1] to [5], wherein the step (S2) is performed by irradiating at least a part of the protective film of the semiconductor chip with a protective film with the laser beam. Peeling method.
  • the following step (SP1) is performed before the step (S2) or after the step (S2), and the following step (SP2) is performed after the following step (SP1) and after the step (S2). , The peeling method according to any one of the above [1] to [6].
  • Step (SP1) The adhesive layer (Z1) of the transfer sheet (Z) having the adhesive layer (Z1) is attached to the surface opposite to the protective film side of the plurality of semiconductor chips with protective films.
  • the pressure-sensitive adhesive layer (X1) is separated, and only a part of the semiconductor chip with a protective film is peeled off from the pressure-sensitive adhesive layer (X1).
  • a method for manufacturing a semiconductor chip with a protective film which comprises a step of carrying out the method according to any one of [1] to [7] above.
  • a method for manufacturing a semiconductor device including a semiconductor chip with a protective film which comprises a step of carrying out the method according to any one of [1] to [7] above.
  • the adhesive force with the pressure-sensitive adhesive layer is selectively reduced with respect to only a part of the semiconductor chips with a protective film. It is possible to provide a method for peeling a semiconductor chip with a protective film.
  • FIG. 3 is a schematic cross-sectional view showing the progress of the decrease in adhesive strength by enlarging the dotted line surrounding portion of FIG. It is a schematic cross-sectional view which shows an example of the steps (SP1)-(SP2) of the peeling method of one aspect of this invention.
  • the "active ingredient” refers to a component contained in the target composition excluding the diluting solvent.
  • the mass average molecular weight (Mw) is a standard polystyrene-equivalent value measured by a gel permeation chromatography (GPC) method, and specifically, is a value measured based on the method described in Examples.
  • (meth) acrylic acid means both “acrylic acid” and “methacrylic acid”, and other similar terms are also the same.
  • a preferable numerical range for example, a range such as content
  • the lower limit value and the upper limit value described stepwise can be combined independently. For example, from the description of "preferably 10 to 90, more preferably 30 to 60", the “preferable lower limit value (10)" and the “more preferable upper limit value (60)” are combined to obtain “10 to 60". be able to.
  • the method for peeling a semiconductor chip with a protective film of the present invention includes the following steps (S1) and the following steps (S2).
  • -Step (S1) A step of attaching a plurality of semiconductor chips with a protective film to the pressure-sensitive adhesive layer (X1) with the protective film side as an attachment surface.
  • S2 The plurality of semiconductor chips with a protective film.
  • at least a part of the protective film of a part of the semiconductor chip with a protective film is sublimated to generate gas, and the adhesive force between the part of the semiconductor chip with a protective film and the pressure-sensitive adhesive layer (X1) is increased. Step to lower
  • the peeling method of the semiconductor chip with a protective film of the present invention is also simply referred to as "the peeling method of the present invention". Further, the peeling method of the semiconductor chip with a protective film according to one aspect of the present invention is also simply referred to as “a peeling method according to one aspect of the present invention”. Further, the step (S1) is also referred to as a “preparation step”. Further, the step (S2) is also referred to as a "adhesive strength lowering step”.
  • a plurality of semiconductor chips 11 with protective films are attached to the pressure-sensitive adhesive layer (X1) with the protective film 13 side as the attachment surface.
  • the semiconductor chip 11 with a protective film is composed of the semiconductor chip 12 and the protective film 13.
  • the protective film 13 is formed on the surface of the semiconductor chip 12 opposite to the circuit surface 12a, that is, on the back surface 12b of the semiconductor chip 12.
  • the thickness of the semiconductor chip 12 is not particularly limited, but is usually 3 ⁇ m to 500 ⁇ m.
  • the thickness of the protective film 13 is also not particularly limited, but is preferably 0.05 ⁇ m to 200 ⁇ m.
  • the size of the semiconductor chip 12 is also not particularly limited, but is usually 5 ⁇ m to 15 mm in length and 5 ⁇ m to 15 mm in width.
  • a plurality of protective films are attached to the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X) in which the pressure-sensitive adhesive layer (X1) is laminated on one side of the base material (Y).
  • the semiconductor chip 11 is attached, but this is only an example, and as shown in FIG. 1 (B-2), a plurality of the semiconductor chips 11 are attached to the adhesive layer (X1) having no base material (Y).
  • the semiconductor chip 11 with the protective film may be attached.
  • the pressure-sensitive adhesive layer (X1) having no base material (Y) for example, the surface opposite to the attachment surface of the plurality of semiconductor chips 11 with protective films is attached to a hard substrate or the like and fixed. Used.
  • the configuration of the pressure-sensitive adhesive sheet (X) is not limited to the configuration mode as shown in FIG. 1 (B-1), and for example, the pressure-sensitive adhesive layers (X1) are provided on both sides of the base material (Y).
  • one of the pressure-sensitive adhesive layers (X1) may be the pressure-sensitive adhesive layer (X2) described later).
  • the adhesive surface of the pressure-sensitive adhesive layer (X1) may be provided with a release material, and the release material is peeled off immediately before the plurality of semiconductor chips 11 with protective films are attached to the pressure-sensitive adhesive layer (X1). The adhesive surface of the adhesive layer (X1) may be exposed.
  • a plurality of semiconductor chips 11 with protective films may be attached to the pressure-sensitive adhesive layer (X1) as described above, and the procedure for carrying out the step (S1) is limited.
  • the step (S1) is the following step (S1-1). -(S1-2) is preferably contained in this order.
  • Step (S1-1) A step of sticking a semiconductor wafer with a protective film to the pressure-sensitive adhesive layer (X1) with the protective film side as a sticking surface.
  • Step (S1-1) In the step (S1-1), as shown in FIG. 2, the semiconductor wafer 1 with a protective film is attached to the pressure-sensitive adhesive layer (X1) with the protective film 13 side as the attachment surface.
  • the semiconductor wafer 1 with a protective film is attached to the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X), but this is only an example and has a base material (Y).
  • the semiconductor wafer 1 with a protective film may be attached to the pressure-sensitive adhesive layer (X1).
  • the semiconductor wafer 1 with a protective film is composed of the semiconductor wafer 2 and the protective film 13.
  • the protective film 13 is formed on the surface of the semiconductor wafer 2 opposite to the circuit surface 2a, that is, on the back surface 2b of the semiconductor wafer 2.
  • Examples of the semiconductor wafer 2 include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers. Further, the back surface of the semiconductor wafer 2 may be appropriately ground to have a thickness of about 3 ⁇ m to 500 ⁇ m. Further, the shape of the semiconductor wafer 2 is not limited to a circle, and may be, for example, a square shape such as a square or a rectangle. The thickness of the protective film 13 is preferably 0.05 ⁇ m to 200 ⁇ m.
  • Step (S1-2) In the step (S1-2), as shown in FIG. 2, the semiconductor wafer 1 with a protective film is diced to obtain a plurality of semiconductor chips 11 with a protective film.
  • the dicing method is not particularly limited, but known methods such as blade dicing and laser dicing can be adopted. Dicing is performed, for example, by providing a notch 20 so as to penetrate the semiconductor wafer 2 and the protective film 13. After dicing, an expanding process may be performed to widen the interval (width of the cut portion 20) between the semiconductor chips 11 with a protective film.
  • the method for manufacturing the semiconductor wafer with a protective film used in the step (S1-1) is not particularly limited, but from the viewpoint of making the thickness of the protective film uniform and improving the covering property of the back surface of the semiconductor wafer with the protective film. Therefore, the semiconductor wafer with a protective film is preferably obtained by attaching the protective film-forming film to the semiconductor wafer and then curing the protective film-forming film.
  • the protective film-forming film can be cured by either thermosetting or curing by irradiation with energy rays, depending on the type of curable component contained in the protective film-forming film.
  • the “energy ray” means an electromagnetic wave or a charged particle beam having an energy quantum, and examples thereof include ultraviolet rays, electron beams, and the like, and ultraviolet rays are preferable.
  • the curing temperature is preferably 100 ° C. to 170 ° C.
  • the curing time is preferably 1 hour to 3 hours.
  • the conditions for curing by irradiation with energy rays are appropriately determined depending on the type of energy rays to be used.
  • the illuminance is preferably 170mW / cm 2 ⁇ 250mW / cm 2, light amount, preferably 600mJ / cm 2 ⁇ 1,000mJ / cm 2.
  • the timing of curing the protective film-forming film may be before the semiconductor wafer to which the protective film-forming film is attached is attached to the adhesive layer (X1), or the semiconductor wafer to which the protective film-forming film is attached. May be after being attached to the pressure-sensitive adhesive layer (X1).
  • the protective film-forming film and the pressure-sensitive adhesive are used from the viewpoint of simplifying the process. It is preferable that the layer (X1) is collectively attached to the back surface 2b of the semiconductor wafer.
  • a protective film-forming laminate in which a protective film-forming film is laminated on the adhesive layer (X1) of the adhesive sheet (X) having the adhesive layer (X1) is used, and the protective film-forming laminate is used. It is preferable to cure the protective film-forming film after adhering the protective film-forming film side and the back surface of the semiconductor wafer.
  • step (S2) of the plurality of semiconductor chips with a protective film, at least a part of the semiconductor chips with a protective film is sublimated to generate gas, and a part of the semiconductor chips with a protective film and an adhesive layer ( It reduces the adhesive force with X1).
  • the present inventors use a semiconductor chip with a protective film as a method for selectively reducing the adhesive force of some of the semiconductor chips with a protective film with the adhesive layer (X1) among the plurality of semiconductor chips with a protective film.
  • the present invention has been completed by recollecting that a part of the protective film is sublimated to generate gas by positively utilizing the protective film.
  • the method of sublimating a part of the protective film to generate gas is not particularly limited.
  • a protective film capable of absorbing laser light is used, and at least one of the protective films of a semiconductor chip with a protective film is used. It is preferable to irradiate the portion with a laser beam.
  • FIG. 3 shows an embodiment of the step (S2) using laser light.
  • FIG. 4 is an enlarged view of the dotted line surrounding portion of FIG. 3, and among the plurality of semiconductor chips with a protective film, the adhesive strength of some of the semiconductor chips with a protective film to the adhesive layer (X1) is reduced. It is a figure which shows typically the situation.
  • the laser beam is irradiated from the surface of the adhesive layer (X1) opposite to the surface to which the semiconductor chips with the protective film are attached, and the protective film of the semiconductor chip with the protective film is applied. Is preferably irradiated.
  • the pressure-sensitive adhesive sheet (X) having the pressure-sensitive adhesive layer (X1) is used, for example, as shown in FIGS.
  • the laser beam L generated from the laser irradiation device 30 is used as the base material of the pressure-sensitive adhesive sheet (X). It is preferable that the light is incident from the (Y) side and the protective film of a part of the semiconductor chip 11a with a protective film is irradiated with the laser beam L. As a result, a part of the protective film is ablated to generate sublimation gas, and the contact area between the protective film around the irradiated portion of the laser beam L and the adhesive layer (X1) is reduced.
  • the protective film is ablated over a wide range to generate sublimation gas, and the contact area between the protective film and the pressure-sensitive adhesive layer (X1) is further reduced.
  • the adhesive force between a part of the semiconductor chip 11a with a protective film and the pressure-sensitive adhesive layer (X1) is reduced. Even if the sublimation gas leaks around a part of the semiconductor chip 11a with a protective film, the leaked sublimation gas is released from the notch 20. Therefore, it is possible to prevent a decrease in the adhesive strength of the semiconductor chip with a protective film that does not want to be peeled off around the semiconductor chip 11a with a protective film.
  • the laser irradiation device 30 is not particularly limited as long as it can irradiate a laser beam capable of generating sublimation gas from the protective film, and for example, a laser irradiation device for applying laser marking to the protective film can be used. ..
  • a laser irradiation device for example, include CSM2000 manufactured by EOTechnics (solid green laser, wavelength: 532 nm), but the device is not necessarily limited to this device and oscillates a laser beam that can be absorbed by a protective film.
  • Various devices can be used.
  • the irradiation conditions of the laser light are not particularly limited as long as the protective film can absorb the laser light, but from the viewpoint of more efficiently peeling off only a part of the semiconductor chips with the protective film, for example, the frequency is preferably 10. It is 000 Hz to 30,000 Hz.
  • the beam diameter of the laser beam is preferably 10 ⁇ m to 100 ⁇ m, more preferably 20 ⁇ m to 40 ⁇ m.
  • the output of the laser light is preferably 0.1 W to 1.0 W.
  • the scanning speed of the laser beam is preferably 50 to 200 mm / sec.
  • laser light irradiation to the protective film of the semiconductor chip with a protective film that is desired to be peeled off is performed on at least a part of the adhesive layer (X1) of the protective film to be adhered to the adhesive layer (the adhesive layer (X1).
  • the adhesive strength with X1) can be reduced, but from the viewpoint of making it easier to reduce the adhesive strength, it is preferable to apply the protective film to a certain area or more of the adhesion surface with the pressure-sensitive adhesive layer (X1). ..
  • the area of laser irradiation on the surface to be adhered to the adhesive layer (X1) of the protective film is preferably the entire surface of the surface to be adhered to the adhesive layer (X1) of the protective film.
  • the laser beam irradiation to the protective film is not biased to a part of the region but is dispersed over a plurality of regions to irradiate the protective film.
  • the protective film and the adhesive layer (X1) can be effectively reduced.
  • the laser beam irradiation of the protective film should be performed from the surface of the adhesive layer (X1) opposite to the surface to which the semiconductor chips with the protective film are attached toward the protective film. Is preferable.
  • the pressure-sensitive adhesive sheet (X) it is preferable to use the pressure-sensitive adhesive sheet (X) from the base material (Y) side toward the protective film.
  • the laser beam is adjusted so as to irradiate the surface to which the protective film adheres to the pressure-sensitive adhesive layer (X1) or its vicinity.
  • the vicinity of the sticking surface of the protective film with the pressure-sensitive adhesive layer (X1) means a position within 10 ⁇ m from the sticking surface.
  • the pressure-sensitive adhesive sheet (X) has a laminated structure of a base material (Y) and a pressure-sensitive adhesive layer (X1).
  • the pressure-sensitive adhesive sheet (X) shown in FIG. 1 (B-1) and FIGS. 2 to 5 has a mode in which the pressure-sensitive adhesive layer (X1) is provided on one side of the base material (Y), but the present invention is limited to this. However, it may be in the form of a double-sided pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer (X2) on the other side of the base material (Y).
  • the pressure-sensitive adhesive sheet (X) is preferably a dicing tape.
  • each layer that the adhesive sheet (X) can have will be described.
  • the base material (Y) contained in the pressure-sensitive adhesive sheet (X) functions as a support for supporting the pressure-sensitive adhesive layer (X1). It is composed.
  • the resin film include polyethylene films such as low-density polyethylene (LDPE) film, linear low-density polyethylene (LLDPE) film, and high-density polyethylene (HDPE) film, polypropylene film, polybutene film, polybutadiene film, and polymethyl.
  • Polyethylene films such as penten films, ethylene-norbornene copolymer films, and norbornene resin films; ethylene-vinyl acetate copolymer films, ethylene- (meth) acrylic acid copolymer films, and ethylene- (meth) acrylic acids.
  • Ethylene-based copolymer-based films such as ester copolymer films; polyvinyl chloride-based films such as polyvinyl chloride films and vinyl chloride copolymer films; polyester-based films such as polyethylene terephthalate films and polybutylene terephthalate films; polyurethane films; Examples thereof include a polyimide film; a polystyrene film; a polycarbonate film; and a fluororesin film.
  • a crosslinked film obtained by cross-linking the resin forming these films and a modified film such as an ionomer film may be used.
  • the base material (Y) one of these resin films may be used alone, or a laminated film in which two or more of these resin films are used in combination may be used.
  • the resin film is a low density polyethylene (LDPE) film or a straight chain.
  • Low-density polyethylene (LLDPE) film polyethylene film such as high-density polyethylene (HDPE) film, polyester-based film such as polyethylene terephthalate film and polybutylene terephthalate, and polypropylene film are preferable.
  • the resin film is preferably a single-layer film having one or more layers selected from the group consisting of a polyethylene film, a polyester-based film, and a polypropylene film, or a laminated film in which two or more layers are laminated.
  • the smoothness of the first surface of the base material (Y) (the surface opposite to the surface on which the adhesive layer (X1) is formed). It is preferable to increase. Specifically, it is preferable that the arithmetic mean roughness Ra on the first surface of the base material (Y) is 0.01 ⁇ m to 0.8 ⁇ m.
  • the arithmetic mean roughness Ra is a value measured in accordance with JIS B 0601: 1994.
  • the base material (Y) may contain a colorant, but when laser light is used in the step of reducing the adhesive force in the step (S2), the base material (Y) is said to be a base material having better laser light transmission. It is preferable that the content of the colorant that absorbs the laser light is small. Specifically, the content of the colorant that absorbs the laser light is preferably less than 0.1% by mass, more preferably less than 0.01% by mass, and further preferably 0, based on the total amount of the base material (Y). It is less than .001% by mass, more preferably no colorant.
  • the thickness of the base material (Y) is not particularly limited, but is preferably in the range of 20 ⁇ m to 450 ⁇ m, more preferably 25 ⁇ m to 400 ⁇ m.
  • the pressure-sensitive adhesive layer (X1) may contain a pressure-sensitive adhesive resin, and may contain additives for pressure-sensitive adhesives such as a cross-linking agent, a pressure-sensitive adhesive, a polymerizable compound, and a polymerization initiator, if necessary. good.
  • the pressure-sensitive adhesive layer (X1) can be formed from a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive resin.
  • each component contained in the pressure-sensitive adhesive composition which is a material for forming the pressure-sensitive adhesive layer (X1), will be described.
  • the adhesive resin is preferably a polymer having adhesiveness by itself and having a mass average molecular weight (Mw) of 10,000 or more.
  • the mass average molecular weight (Mw) of the adhesive resin is more preferably 10,000 to 2 million, still more preferably 20,000 to 1.5 million, and even more preferably 30,000 to 1,000,000 from the viewpoint of improving the adhesive strength. ..
  • the adhesive resin examples include rubber resins such as polyisobutylene resins, acrylic resins, urethane resins, polyester resins, olefin resins, silicone resins, and polyvinyl ether resins. These adhesive resins may be used alone or in combination of two or more. When these adhesive resins are copolymers having two or more kinds of constituent units, the form of the copolymer is not particularly limited, and is a block copolymer, a random copolymer, or an alternating copolymer. It may be either a coalescence or a graft copolymer.
  • the adhesive resin may be an energy ray-curable adhesive resin in which a polymerizable functional group is introduced into the side chain.
  • a polymerizable functional group examples include a (meth) acryloyl group and a vinyl group.
  • energy rays include ultraviolet rays and electron beams, but ultraviolet rays are preferable.
  • the content of the tacky resin is preferably 30 to 99.99% by mass, more preferably 40 to 99.95% by mass, still more preferably, based on the total amount (100% by mass) of the active ingredient of the pressure-sensitive adhesive composition. It is 50 to 99.90% by mass, more preferably 55 to 99.80% by mass, and even more preferably 60 to 99.50% by mass.
  • the content of each component with respect to the total amount of the active ingredient of the pressure-sensitive adhesive composition is "the content of each component in the pressure-sensitive adhesive layer formed from the pressure-sensitive adhesive composition”. Is synonymous with.
  • the adhesive resin contains an acrylic resin from the viewpoint of exhibiting excellent adhesive strength and suppressing the phenomenon of cutting water entering between the adhesive layer (X1) and the protective film during dicing. Is preferable.
  • the content ratio of the acrylic resin in the adhesive resin is preferably 30 to 100% by mass, more preferably 50 to 100% by mass, based on the total amount (100% by mass) of the adhesive resin contained in the pressure-sensitive adhesive composition. %, More preferably 70 to 100% by mass, and even more preferably 85 to 100% by mass.
  • acrylic resin examples include a polymer containing a structural unit derived from an alkyl (meth) acrylate having a linear or branched alkyl group, and a (meth) acrylate having a cyclic structure. Examples thereof include a polymer containing a constituent unit.
  • the mass average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 1,500,000, more preferably 200,000 to 1,300,000, still more preferably 350,000 to 1,200,000, and even more preferably 500,000 to 1,100,000.
  • acrylic resin examples include a structural unit (a1) derived from an alkyl (meth) acrylate (a1') (hereinafter, also referred to as “monomer (a1')”) and a functional group-containing monomer (a2') (hereinafter, "monomer”).
  • An acrylic copolymer (A1) having a structural unit (a2) derived from (also referred to as (a2') ”) is more preferable.
  • the alkyl group contained in the monomer (a1') may be a straight chain alkyl group or a branched chain alkyl group.
  • Examples of the monomer (a1') include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, and tridecyl (). Examples thereof include meta) acrylate and stearyl (meth) acrylate. One of these monomers (a1') may be used alone, or two or more thereof may be used in combination. As the monomer (a1'), butyl (meth) acrylate and 2-ethylhexyl (meth) acrylate are preferable.
  • the content of the structural unit (a1) is preferably 50 to 99.9% by mass, more preferably 60 to 99.0% by mass, based on the total structural unit (100% by mass) of the acrylic copolymer (A1). %, More preferably 70 to 97.0% by mass, and even more preferably 80 to 95.0% by mass.
  • Examples of the functional group contained in the monomer (a2') include a hydroxyl group, a carboxy group, an amino group, an epoxy group and the like. That is, examples of the monomer (a2') include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer. These monomers (a2') may be used alone or in combination of two or more. Among these, as the monomer (a2'), a hydroxyl group-containing monomer and a carboxy group-containing monomer are preferable.
  • hydroxyl group-containing monomer examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl (meth).
  • Hydroxyalkyl (meth) acrylates such as acrylates and 4-hydroxybutyl (meth) acrylates; unsaturated alcohols such as vinyl alcohols and allyl alcohols.
  • carboxy group-containing monomer examples include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, and citraconic acid and their anhydrides.
  • monocarboxylic acids such as (meth) acrylic acid and crotonic acid
  • dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, and citraconic acid and their anhydrides.
  • 2- (acryloyloxy) ethyl succinate, 2-carboxyethyl (meth) acrylate and the like examples include 2- (acryloyloxy) ethyl succinate, 2-carboxyethyl (meth) acrylate and the like.
  • the content of the structural unit (a2) is preferably 0.1 to 40% by mass, more preferably 0.5 to 35% by mass, based on the total structural unit (100% by mass) of the acrylic copolymer (A1). %, More preferably 1.0 to 30% by mass, and even more preferably 3.0 to 25% by mass.
  • the acrylic copolymer (A1) may further have a structural unit (a3) derived from a monomer (a3') other than the monomers (a1') and (a2').
  • the content of the structural units (a1) and (a2) is preferably 70 with respect to the total structural units (100% by mass) of the acrylic copolymer (A1). It is -100% by mass, more preferably 80 to 100% by mass, still more preferably 90 to 100% by mass, and even more preferably 95 to 100% by mass.
  • Examples of the monomer (a3') include olefins such as ethylene, propylene, and isobutylene; halogenated olefins such as vinyl chloride and vinylidene chloride; diene monomers such as butadiene, isoprene, and chloroprene; cyclohexyl (meth). Cyclic such as acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, and imide (meth) acrylate.
  • olefins such as ethylene, propylene, and isobutylene
  • halogenated olefins such as vinyl chloride and vinylidene chloride
  • diene monomers such as butadiene, isoprene, and chloro
  • Structural (meth) acrylates styrene, ⁇ -methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, (meth) acrylamide, (meth) acrylonitrile, (meth) acryloylmorpholine, N-vinylpyrrolidone and the like. Be done.
  • the acrylic copolymer (A1) may be an energy ray-curable acrylic copolymer in which a polymerizable functional group is introduced into the side chain.
  • the polymerizable functional group include a (meth) acryloyl group and a vinyl group.
  • energy rays include ultraviolet rays and electron beams, but ultraviolet rays are preferable.
  • the polymerizable functional group is a substituent capable of binding to an acrylic copolymer having the above-mentioned structural units (a1) and (a2) and a functional group having the structural unit (a2) of the acrylic copolymer. It can be introduced by reacting with a compound having a polymerizable functional group. Examples of the compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, and glycidyl (meth) acrylate.
  • the pressure-sensitive adhesive composition preferably further contains a cross-linking agent.
  • the cross-linking agent reacts with a tacky resin having a functional group like the above-mentioned acrylic copolymer (A1), and cross-links the tacky resins with the functional group as a cross-linking starting point.
  • cross-linking agent examples include isocyanate-based cross-linking agents, epoxy-based cross-linking agents, aziridine-based cross-linking agents, and metal chelate-based cross-linking agents. These cross-linking agents may be used alone or in combination of two or more. Among these cross-linking agents, isocyanate-based cross-linking agents are preferable from the viewpoint of increasing the cohesive force to improve the adhesive force and the availability.
  • the content of the cross-linking agent is appropriately adjusted according to the number of functional groups of the adhesive resin, and is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the adhesive resin having functional groups. It is more preferably 0.03 to 7 parts by mass, and further preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition may further contain a pressure-sensitive adhesive from the viewpoint of further improving the pressure-sensitive adhesive strength.
  • the "tackiness-imparting agent” refers to an oligomer having a mass average molecular weight (Mw) of less than 10,000, which is a component that supplementarily improves the adhesive strength of the above-mentioned adhesive resin, and refers to the above-mentioned adhesion. It is distinguished from the sex resin.
  • the mass average molecular weight (Mw) of the tackifier is preferably 400 to less than 10,000, more preferably 500 to 8,000, and even more preferably 800 to 5,000.
  • C5 distillates such as rosin-based resin, terpene-based resin, styrene-based resin, penten, isoprene, piperin, and 1,3-pentadien produced by thermal decomposition of petroleum naphtha are copolymerized.
  • Examples thereof include a C5 petroleum resin obtained, a C9 petroleum resin obtained by copolymerizing a C9 distillate such as inden and vinyl toluene produced by thermal decomposition of petroleum naphtha, and a hydride resin obtained by hydrogenating these.
  • the softening point of the tackifier is preferably 60 to 170 ° C, more preferably 65 to 160 ° C, and even more preferably 70 to 150 ° C.
  • the "softening point" of the tackifier means a value measured in accordance with JIS K 2531.
  • the tackifier one type may be used alone, or two or more types having different softening points, structures, etc. may be used in combination.
  • the weighted average of the softening points of the plurality of tackifiers belongs to the above range.
  • the content of the tackifier is preferably 0.01 to 65% by mass, more preferably 0.05 to 55% by mass, still more preferably, based on the total amount (100% by mass) of the active ingredient of the pressure-sensitive adhesive composition. It is 0.1 to 50% by mass, more preferably 0.5 to 45% by mass, and even more preferably 1.0 to 40% by mass.
  • the pressure-sensitive adhesive composition contains an energy ray-curable pressure-sensitive adhesive resin as the pressure-sensitive adhesive resin
  • the pressure-sensitive adhesive composition further contains a photopolymerization initiator.
  • the photopolymerization initiator include 1-hydroxy-cyclohexyl-phenyl-ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzylphenyl sulfate, tetramethylthium monosulfide, and azobisisobutyrol. Examples thereof include nitrile, dibenzyl, diacetyl, 8-chloranthraquinone and the like. These photopolymerization initiators may be used alone or in combination of two or more.
  • the content of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and further preferably 0. It is 05 to 2 parts by mass.
  • the pressure-sensitive adhesive composition which is a material for forming the pressure-sensitive adhesive layer (X1), may contain an additive for a pressure-sensitive adhesive used in a general pressure-sensitive adhesive, in addition to the above-mentioned additives.
  • additives for adhesives include antioxidants, softeners (plasticizers), rust inhibitors, retarders, reaction accelerators (catalysts), and ultraviolet absorbers.
  • each of these adhesive additives may be used alone or in combination of two or more.
  • each additive for adhesive is preferably 0.0001 to 20 parts by mass, more preferably 0.001 with respect to 100 parts by mass of the adhesive resin. ⁇ 10 parts by mass.
  • the pressure-sensitive adhesive composition may contain at least one of a pigment and a dye, but when laser light is used in the step of reducing the adhesive strength in the step (S2), from the viewpoint of laser light transmission. It is preferable that the content of the pigment and the dye that absorb the laser light is small. Specifically, the content of the pigment and the dye that absorb the laser light is preferably less than 0.1% by mass, more preferably less than 0.01% by mass, still more preferably, based on the total amount of the pressure-sensitive adhesive composition. It is less than 0.001% by mass, more preferably free of pigments and dyes.
  • a pressure-sensitive adhesive composition capable of preventing scattering of the laser light is preferable.
  • the pressure-sensitive adhesive layer (X2) contained in the double-sided pressure-sensitive adhesive sheet may contain an adhesive resin, and if necessary, a cross-linking agent, a pressure-sensitive adhesive, etc. Adhesive additives such as polymerizable compounds and polymerization initiators may be contained.
  • Preferred embodiments of the composition and form of the pressure-sensitive adhesive layer (X2) are the same as those of the pressure-sensitive adhesive layer (X1).
  • the compositions of the pressure-sensitive adhesive layer (X1) and the pressure-sensitive adhesive layer (X2) may be the same or different.
  • the forms of the pressure-sensitive adhesive layer (X1) and the pressure-sensitive adhesive layer (X2) may be the same or different.
  • the thicknesses of the pressure-sensitive adhesive layer (X1) and the pressure-sensitive adhesive layer (X2) are independently, but are not particularly limited, preferably about 1 to 50 ⁇ m, and more preferably 2 to 30 ⁇ m.
  • the thicknesses of the pressure-sensitive adhesive layer (X1) and the pressure-sensitive adhesive layer (X2) may be the same or different.
  • a release material is further provided on the adhesive surface of either one or both of the adhesive layer (X1) of the adhesive sheet (X) and the adhesive layer (X2) that the adhesive sheet (X) may have. May be.
  • the release material include a release sheet that has undergone double-sided release treatment, a release sheet that has undergone single-sided release treatment, and the like, in which a release agent is applied onto a base material for the release material.
  • Examples of the base material for the release material include papers such as high-quality paper, glassin paper, and kraft paper; polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin, polypropylene resin, and polyethylene resin.
  • Plastic film such as olefin resin film; etc.
  • release agent examples include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins, and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.
  • rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins, and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.
  • the thickness of the release material is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 25 to 170 ⁇ m, and even more preferably 35 to 80 ⁇ m.
  • the method for producing the pressure-sensitive adhesive sheet (X) is not particularly limited, and the pressure-sensitive adhesive sheet (X) can be produced by a known method.
  • an organic solvent is added to a raw material composition containing each of the above components (hereinafter, also referred to as “adhesive layer forming composition”) to form a solution of the raw material composition, and the solution is used as a base material (Y).
  • the pressure-sensitive adhesive layer (X1) can be formed on the base material (Y) by applying the coating film on the substrate (Y) by a known coating method to form a coating film and then drying the coating film.
  • the solution is applied onto the above-mentioned release material by a known coating method to form a coating film, and then dried to form an adhesive layer (X1) on the release material, and then the base material (Y).
  • the pressure-sensitive adhesive layer (X1) are bonded together to produce a pressure-sensitive adhesive sheet (X) having a laminated structure of a release material / pressure-sensitive adhesive layer (X1) / base material (Y).
  • Examples of the organic solvent used include toluene, ethyl acetate, methyl ethyl ketone and the like.
  • the solid content concentration of the solution of the pressure-sensitive adhesive layer-forming composition when the organic solvent is blended is preferably 10 to 80% by mass, more preferably 25 to 70% by mass, and further preferably 45 to 65% by mass.
  • Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a roll knife coating method, a blade coating method, a die coating method, and a gravure coating method.
  • the protective film-forming film is not particularly limited, but preferably contains a polymer component (B) and a curable component (C), and further contains a colorant (D), a coupling agent (E), and an inorganic filler. (F), general-purpose additive (G) may be contained.
  • B polymer component
  • C curable component
  • D colorant
  • E coupling agent
  • G general-purpose additive
  • the “polymer component” means a compound having a mass average molecular weight (Mw) of 20,000 or more and having at least one repeating unit.
  • Mw mass average molecular weight
  • the mass average molecular weight (Mw) of the polymer component (B) is preferably 20,000 to 3 million, more preferably 50,000 to 2 million, and even more preferably 100,000 to 1.5 million.
  • the content of the polymer component (B) is preferably 5 to 50% by mass, more preferably 8 to 40% by mass, still more preferably 10 to 30% by mass, based on the total amount (100% by mass) of the protective film-forming film. %, More preferably 12 to 25% by mass.
  • an acrylic polymer (B1) is preferable, and other than the acrylic polymer (B1), polyesters, phenoxy resins, polycarbonates, polyethers, polyurethanes, polysiloxanes, rubber-based polymers and the like can be used.
  • a non-acrylic polymer (B2) may be used.
  • One of these polymer components may be used alone, or two or more thereof may be used in combination.
  • the mass average molecular weight (Mw) of the acrylic polymer (B1) is preferably 20,000 to 3 million, more preferably 100,000 to 1.5 million, from the viewpoint of imparting flexibility and film-forming property to the protective film-forming film. , More preferably 150,000 to 1.2 million, and even more preferably 250,000 to 1 million.
  • the glass transition temperature (Tg) of the acrylic polymer (B1) is determined from the viewpoint of the adhesiveness of the protective film formed from the protective film-forming film to the adherend and the viewpoint of improving the reliability of the chip with the protective film. It is preferably ⁇ 60 to 50 ° C., more preferably ⁇ 50 to 40 ° C., still more preferably ⁇ 40 to 30 ° C., and even more preferably ⁇ 35 to 20 ° C.
  • the acrylic polymer (B1) examples include a polymer containing an alkyl (meth) acrylate as a main component, and specifically, a constituent unit derived from an alkyl (meth) acrylate having an alkyl group having 1 to 18 carbon atoms.
  • An acrylic polymer containing (b1) is preferable, and an acrylic copolymer containing a structural unit (b2) derived from a functional group-containing monomer together with the structural unit (b1) is more preferable.
  • the component (B1) one type may be used alone, or two or more types may be used in combination.
  • the form of the copolymer may be any of a block copolymer, a random copolymer, an alternating copolymer, and a graft copolymer.
  • the number of carbon atoms of the alkyl group of the alkyl (meth) acrylate constituting the structural unit (b1) is preferably 1 to 18, and more preferably 1 to 18 from the viewpoint of imparting flexibility and film-forming property to the protective film-forming film. It is 1 to 12, more preferably 1 to 8.
  • alkyl (meth) acrylate examples include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, pentyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and isooctyl (meth).
  • examples thereof include meta) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, lauryl (meth) acrylate, and stearyl (meth) acrylate.
  • these alkyl (meth) acrylates one type may be used alone, or two or more types may be used in combination.
  • an alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is preferable, an alkyl (meth) acrylate having an alkyl group having 4 to 6 carbon atoms is more preferable, and a butyl (meth) acrylate is further preferable.
  • the content ratio of the structural unit derived from the alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is preferably 1 to 70% by mass with respect to the total structural unit (100% by mass) of the acrylic polymer (B1). , More preferably 5 to 65% by mass, still more preferably 10 to 60% by mass.
  • an alkyl (meth) acrylate having an alkyl group having 1 to 3 carbon atoms is preferable, and a methyl (meth) acrylate is more preferable.
  • the content ratio of the structural unit derived from the alkyl (meth) acrylate having an alkyl group having 1 to 3 carbon atoms is preferably relative to the total structural unit (100% by mass) of the acrylic polymer (B1). It is 1 to 60% by mass, more preferably 3 to 50% by mass, and further preferably 5 to 40% by mass.
  • the content ratio of the structural unit (b1) is preferably 50% by mass or more, more preferably 50 to 99% by mass, and further preferably 55 with respect to the total structural unit (100% by mass) of the acrylic polymer (B1). It is ⁇ 90% by mass, more preferably 60-80% by mass.
  • Examples of the functional group-containing monomer constituting the structural unit (b2) include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an epoxy group-containing monomer, an amino group-containing monomer, a cyano group-containing monomer, a keto group-containing monomer, and a nitrogen atom-containing monomer. Examples thereof include a monomer having a ring and a monomer containing an alkoxysilyl group. These functional group-containing monomers may be used alone or in combination of two or more. Among these, a hydroxyl group-containing monomer is preferable.
  • hydroxyl group-containing monomer examples include those exemplified in the description of the hydroxyl group-containing monomer in the pressure-sensitive adhesive layer (X1), but 2-hydroxyethyl (meth) acrylate is preferable.
  • Examples of the carboxy group-containing monomer include those exemplified as the carboxy group-containing monomer in the pressure-sensitive adhesive layer (X1).
  • a carboxy group-containing monomer By using a carboxy group-containing monomer, a carboxy group is introduced into the acrylic polymer (B1), and when the protective film-forming film contains an energy ray-curable component as the curable component (C), the component ( The compatibility between C) and the component (B) is improved.
  • the carboxyl group reacts with the epoxy group in the epoxy-based thermosetting component, so that the monomer is derived from the carboxyl group-containing monomer.
  • the content of the structural unit is preferably small.
  • the content of the structural unit derived from the carboxy group-containing monomer is based on the total structural unit (100% by mass) of the (A1) acrylic polymer. It is preferably 0 to 10% by mass, more preferably 0 to 5% by mass, still more preferably 0 to 2% by mass, and even more preferably 0% by mass.
  • Examples of the epoxy-containing monomer include an epoxy group-containing (meth) acrylic acid ester and a non-acrylic epoxy group-containing monomer.
  • Examples of the epoxy group-containing (meth) acrylic acid ester include glycidyl (meth) acrylate, ⁇ -methylglycidyl (meth) acrylate, (3,4-epoxycyclohexyl) methyl (meth) acrylate, and 3-epoxycyclo-2-. Examples thereof include hydroxypropyl (meth) acrylate.
  • Examples of the non-acrylic epoxy group-containing monomer include glycidyl crotonate and allyl glycidyl ether. Among these, epoxy group-containing (meth) acrylic acid ester is preferable, and glycidyl (meth) acrylate is more preferable. These functional group-containing monomers may be used alone or in combination of two or more.
  • the content ratio of the structural unit derived from the epoxy group-containing monomer is preferably 1 to 1 to 100% by mass with respect to the total structural unit (100% by mass) of the acrylic polymer (B1) from the viewpoint of facilitating the improvement of the sublimation property of the protective film. It is 30% by mass, more preferably 5 to 27% by mass, and even more preferably 10 to 24% by mass.
  • the content of the structural unit (b2) is preferably 1 to 50% by mass, more preferably 5 to 45% by mass, still more preferably, with respect to the total structural unit (100% by mass) of the acrylic polymer (B1). It is 10 to 40% by mass, more preferably 20 to 40% by mass.
  • the acrylic polymer (B1) may have a structural unit derived from other monomers other than the above-mentioned structural units (b1) and (b2) as long as the effects of the present invention are not impaired.
  • examples of other monomers include vinyl acetate, styrene, ethylene, ⁇ -olefin and the like.
  • the protective film-forming film may contain a non-acrylic resin (B2) as a resin component other than the above-mentioned acrylic polymer (B1).
  • a non-acrylic resin (B2) include polyester, phenoxy resin, polycarbonate, polyether, polyurethane, polysiloxane, rubber polymer and the like. These resins may be used alone or in combination of two or more.
  • the mass average molecular weight of the non-acrylic resin (B2) is preferably 20,000 or more, more preferably 20,000 to 100,000, and further preferably 20,000 to 80,000.
  • non-acrylic resin (B2) may be used alone, but when the pressure-sensitive adhesive sheet and the protective film-forming film are laminated by being used in combination with the above-mentioned acrylic polymer (B1), the layers are layered. Peeling can be easily performed, and the generation of voids and the like can be suppressed.
  • the mass ratio of the non-acrylic resin (B2) to the acrylic polymer (B1) [(B2) / (B1) ] Is preferably 1/99 to 60/40, more preferably 1/99 to 30/70 from the above viewpoint.
  • the structural unit constituting the acrylic polymer (B1) includes a structural unit derived from an epoxy group-containing monomer
  • the acrylic polymer (B1) and the phenoxy resin having an epoxy group have thermosetting properties. However, these are included in the concept of the polymer component (B), not the curable component (C).
  • the curable component (C) plays a role of curing the protective film-forming film to form a hard protective film, and is a compound having a mass average molecular weight of less than 20,000.
  • the curable component (C) it is preferable to use a thermosetting component (C1) and / or an energy ray-curable component (C2), and at least from the viewpoint of sufficiently advancing the curing reaction and reducing costs. It is more preferable to use the thermosetting component (C1).
  • the thermosetting component (C1) preferably contains at least a compound having a functional group that reacts by heating.
  • the energy ray-curable component (C2) contains a compound (C21) having a functional group that reacts by irradiation with energy rays, and is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams. Curing is realized by the functional groups of these curable components reacting with each other to form a three-dimensional network structure.
  • the mass average molecular weight (Mw) of the curable component (C) is used in combination with the component (B) from the viewpoint of suppressing the viscosity of the composition forming the protective film-forming film and improving the handleability. It is preferably less than 20,000, more preferably 10,000 or less, still more preferably 100 to 10,000.
  • thermosetting component (C1)) As the thermosetting component (C1), an epoxy-based thermosetting component is preferable.
  • the epoxy-based thermosetting component it is preferable to use a combination of a compound (C11) having an epoxy group and a thermosetting agent (C12).
  • epoxy compound (C11) examples include a polyfunctional epoxy resin, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, and di.
  • epoxy compounds having bifunctionality or higher in molecules such as cyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and phenylene skeleton type epoxy resin. These epoxy compounds (C11) may be used alone or in combination of two or more.
  • the content of the epoxy compound (C11) is preferably 1 to 500 parts by mass, more preferably 3 to 300 parts by mass, still more preferably 10 to 150 parts by mass, still more preferably, with respect to 100 parts by mass of the component (B). Is 20 to 120 parts by mass.
  • thermosetting agent (C12) functions as a curing agent for the epoxy compound (C11).
  • a compound having two or more functional groups capable of reacting with an epoxy group in one molecule is preferable.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, an acid anhydride group (acid anhydride structure) and the like.
  • a phenolic hydroxyl group, an amino group, or an acid anhydride group is preferable, a phenolic hydroxyl group or an amino group is more preferable, and an amino group is further preferable.
  • thermosetting agent having a phenol group examples include polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-based phenol resins, zylock-type phenol resins, and aralkylphenol resins.
  • amine-based thermosetting agent having an amino group examples include dicyandiamide (DICY) and the like.
  • DIX dicyandiamide
  • One of these thermosetting agents (C12) may be used alone, or two or more thereof may be used in combination.
  • thermosetting agent (C12) is preferably 0.1 to 500 parts by mass, and more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the epoxy compound (C11).
  • a curing accelerator (C13) may be used to adjust the rate of thermosetting of the protective film-forming film.
  • the curing accelerator (C13) is preferably used in combination with the epoxy compound (C11) as a thermosetting component (C1).
  • Examples of the curing accelerator (C13) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, and the like. Imidazoles such as 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; tributylphosphine, diphenylphosphine, triphenylphosphine and the like.
  • phosphines organic phosphines; tetraphenylborone salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate can be mentioned.
  • These curing accelerators (C13) may be used alone or in combination of two or more.
  • the content of the curing accelerator (C13) is the epoxy compound (C11) and heat from the viewpoint of improving the adhesiveness of the protective film formed from the protective film forming film and improving the reliability of the chip with the protective film.
  • the total amount of the curing agent (C12) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 6 parts by mass, and further preferably 0.3 to 4 parts by mass with respect to 100 parts by mass.
  • Energy ray curable component (C2) As the energy ray-curable component (C2), a compound (C21) having a functional group that reacts by irradiation with energy rays may be used alone, or a photopolymerization initiator (C22) may be combined with the compound (C21). It is preferable to use it.
  • Compound having a functional group that reacts by irradiation with energy rays (C21))
  • Examples of the compound (C21) having a functional group that reacts by irradiation with energy rays (hereinafter, also referred to as “energy ray-reactive compound (C21)”) include trimethylolpropane triacrylate, pentaerythritol triacrylate, and pentaerythritol tetraacrylate.
  • the content of the energy ray-reactive compound (C21) is preferably 1 to 1,500 parts by mass, and more preferably 3 to 1,200 parts by mass with respect to 100 parts by mass of the component (B).
  • Photopolymerization Initiator (C22) When used in combination with the above-mentioned energy ray-reactive compound (C21) and a photopolymerization initiator (C22), the polymerization curing time can be shortened and the curing of the protective film-forming film can proceed even if the amount of light irradiation is small. Can be done.
  • the photopolymerization initiator (C22) include those described above.
  • the content of the photopolymerization initiator (C22) is preferably 0.1 with respect to 100 parts by mass of the energy ray-reactive compound (C21) from the viewpoint of sufficiently advancing the curing reaction and suppressing the formation of residues. It is up to 10 parts by mass, more preferably 1 to 5 parts by mass.
  • the content of the component (C) is preferably 5 to 50% by mass, more preferably 8 to 40% by mass, still more preferably 10 to 30% by mass, based on the total amount (100% by mass) of the protective film-forming film. Even more preferably, it is 12 to 25% by mass.
  • the content of the component (C) includes the thermosetting component (C1) containing the above-mentioned epoxy compound (C11), thermosetting agent (C12), and curing accelerator (C13), and energy ray reactivity. It is the total content of the energy ray curable component (C2) containing the compound (C21) and the photopolymerization initiator (C22).
  • the protective film-forming film preferably further contains a colorant (D).
  • the protective film forming film contains the colorant (D) and laser light is used in the step of reducing the adhesive force in the step (S2)
  • the protective film can be selected by selecting the type and content of the colorant (D).
  • the laser light absorption rate can be improved, and the sublimation property of the protective film can be improved. That is, the sublimation property of the protective film can be improved by containing the colorant (D) capable of absorbing the laser beam in the protective film formed by the protective film forming film.
  • the pigment may be an organic pigment or an inorganic pigment.
  • the dye include a basic dye, an acid dye, a disperse dye, and a direct dye.
  • the black pigment include carbon black, copper oxide, iron tetraoxide, manganese dioxide, aniline black, activated carbon and the like.
  • yellow pigments include yellow lead, zinc yellow, cadmium yellow, yellow iron oxide, mineral fast yellow, nickel titanium yellow, naples yellow, naphthol yellow S, Hansa yellow, benzidine yellow G, benzidine yellow GR, and quinoline yellow rake. , Permanent Yellow NCG, Tartrajin Lake and the like.
  • orange pigment examples include red chrome yellow, molybdenum orange, permanent orange GTR, pyrazolone orange, vulcan orange, induslen brilliant orange RK, benzidine orange G, and induslen brilliant orange GKM.
  • red pigments include red iron oxide, cadmium red, lead tan, mercury sulfide, cadmium, permanent red 4R, resole red, pyrozolone red, watching red, calcium salt, lake red D, brilliant carmine 6B, eosin lake, and rhodamine. Examples thereof include Lake B, Alizarin Lake, and Brilliant Carmine 3B.
  • purple pigment examples include manganese purple, fast violet B, methyl violet lake and the like.
  • blue pigment examples include dark blue, cobalt blue, alkaline blue lake, Victoria blue lake, phthalocyanine blue, metal-free phthalocyanine blue, phthalocyanine blue partially chlorinated, first sky blue, and induslen blue BC.
  • green pigment examples include chrome green, chromium oxide, pigment green B, malachite green lake, final yellow green G and the like.
  • dye examples include niglocin, methylene blue, rose bengal, quinoline yellow, ultramarine blue and the like.
  • black pigments it is more preferable to use carbon black from the viewpoint of improving the reliability of the semiconductor chip. From the same viewpoint, it is more preferable to use niglosin among the black dyes.
  • these colorants (D) one type may be used alone, or two or more types may be used in combination.
  • the content of the colorant (D) is preferably 0.1 to 30% by mass, more preferably 0.5 to 25% by mass, still more preferably 1 with respect to the total amount (100% by mass) of the protective film forming film. It is 0.0 to 15% by mass, more preferably 1.2 to 5% by mass.
  • the protective film-forming film preferably further contains a coupling agent (E).
  • a coupling agent (E) By containing the coupling agent (E), the polymer component in the protective film-forming film can be bonded to the surface of the semiconductor chip or the filler which is the adherend, and the adhesiveness and cohesiveness can be improved. .. Further, the water resistance can be improved without impairing the heat resistance of the protective film formed from the protective film-forming film.
  • the coupling agent (E) a compound that reacts with the functional group of the component (B) or the component (C) is preferable, and a silane coupling agent is more preferable.
  • the silane coupling agent include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and ⁇ - (methacryloxy).
  • an oligomer type coupling agent is preferable.
  • the molecular weight of the coupling agent (E) including the oligomer-type coupling agent is preferably 100 to 15,000, more preferably 150 to 10,000, more preferably 200 to 5,000, still more preferably 250 to 3. It is 000, more preferably 350 to 2,000.
  • the content of the coupling agent (E) is preferably 0.01 to 10% by mass, more preferably 0.05 to 7% by mass, still more preferably, based on the total amount (100% by mass) of the protective film-forming film. It is 0.10 to 4% by mass, more preferably 0.15 to 2% by mass.
  • the protective film-forming film preferably further contains an inorganic filler (F).
  • an inorganic filler (F) By including the inorganic filler (F), it is possible to adjust the coefficient of thermal expansion of the protective film after curing of the protective film forming film within an appropriate range, and the thermal expansion of the protective film after curing with respect to the semiconductor chip becomes possible. By optimizing the coefficient, the reliability of the semiconductor device can be improved. It is also possible to reduce the hygroscopicity of the protective film after curing.
  • Examples of the inorganic filler (F) include powders of silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride and the like, spherical beads, single crystal fibers, glass fibers and the like. Can be mentioned.
  • One of these inorganic fillers (F) may be used alone, or two or more thereof may be used in combination. Among these, silica or alumina is preferable.
  • the average particle size of the inorganic filler (F) is preferably 10 nm to 50 ⁇ m, more preferably 20 nm to 30 ⁇ m, and further preferably 30 nm to 30 nm from the viewpoint of improving the gloss value of the protective film formed from the protective film forming film. It is 10 ⁇ m.
  • the average particle size of the inorganic filler (F) means a value measured using a laser diffraction / scattering type particle size distribution measuring device.
  • the content of the inorganic filler (F) is preferably 25 to 80% by mass, more preferably 30 to 70% by mass, still more preferably 40 to 65% by mass, based on the total amount (100% by mass) of the protective film-forming film. %, More preferably 45 to 60% by mass.
  • various additives may be added to the protective film-forming film, if necessary.
  • various additives include cross-linking agents, leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, chain transfer agents and the like.
  • the method for producing the protective film-forming film is not particularly limited, and the protective film-forming film can be produced by a known method.
  • an organic solvent is added to a raw material composition containing each of the above-mentioned components (hereinafter, also referred to as “protective film-forming composition”) to form a solution of the protective film-forming composition, and the solution is used as the above-mentioned release sheet.
  • protect film-forming composition a raw material composition containing each of the above-mentioned components
  • It can be produced by applying it by a known coating method on the above to form a coating film and then drying it to form a protective film forming film on a release sheet.
  • Examples of the organic solvent used include toluene, ethyl acetate, methyl ethyl ketone and the like.
  • the solid content concentration of the solution of the protective film-forming composition when the organic solvent is blended is preferably 10 to 80% by mass, more preferably 20 to 70% by mass, and further preferably 30 to 65% by mass.
  • Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a roll knife coating method, a blade coating method, a die coating method, and a gravure coating method.
  • the protective film-forming film may have a single layer or a multilayer structure of two or more types.
  • the thickness of the protective film-forming film is not particularly limited, but is preferably 3 to 300 ⁇ m, more preferably 5 to 250 ⁇ m, still more preferably 7 to 200 ⁇ m, and even when the protective film-forming film has a multi-layer structure, the total thickness is sufficient. It is preferable that (the total thickness of each layer) is in this range.
  • the method for producing the protective film-forming laminate including the laminated structure of the protective film-forming film and the pressure-sensitive adhesive sheet (X) is not particularly limited, and can be produced by a known method. First, as described in the method for producing the protective film-forming film, the protective film-forming film is formed on the release sheet. Next, by adhering the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X) and the protective film-forming film formed on the release sheet, the release sheet / protective film-forming film / pressure-sensitive adhesive layer (X1) or peeling is performed. A protective film-forming laminate having a laminated structure of a sheet / protective film-forming film / adhesive layer (X1) / base material (Y) can be produced.
  • the method of picking up the semiconductor chip with a protective film whose adhesive strength with the adhesive layer (X1) is reduced by the step (S2) is not particularly limited, but for example, from the lower side with a pin or the like via the adhesive sheet (X). Examples include a method of pushing up and picking up by a vacuum collet or the like.
  • Step (SP1) the adhesive layer (Z1) of the transfer sheet (Z) having the adhesive layer (Z1) is attached to the surface opposite to the protective film side of the plurality of semiconductor chips with protective films.
  • the agent layer (X1) is separated, only a part of the semiconductor chip with a protective film is peeled off from the pressure-sensitive adhesive layer (X1), and the part of the semiconductor chip with a protective film is put on the transfer sheet (Z).
  • Transfer Step In the following description, this method is also referred to as a "transfer method".
  • the pressure-sensitive adhesive layer (Z1) of the transfer sheet (Z) having the pressure-sensitive adhesive layer (Z1) is separated from a plurality of semiconductor chips 11 with protective films (a part of which is desired to be peeled off).
  • the surface of the semiconductor chip 11a with a protective film) opposite to the protective film side is attached as an attachment surface, and the adhesive layer (X1) and the transfer sheet (Z) are attached via the plurality of semiconductor chips 11 with a protective film. And are laminated.
  • the transfer sheet (Z) has a laminated structure of a base material (Y') and an adhesive layer (Z1).
  • the base material (Y') the same base material (Y') as the base material (Y) of the pressure-sensitive adhesive sheet (X) can be used, and the thickness is also the same as that of the base material (Y).
  • the pressure-sensitive adhesive layer (Z1) the same ones as those listed as the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X) can be used.
  • the step (SP1) may be performed before the step (S2) or after the step (S2). Regardless of the timing, the adhesive strength lowering step in the step (S2) is not affected.
  • the step (S2) is carried out, and in a state where the adhesive force of a part of the semiconductor chip 11a with a protective film with the adhesive layer (X1) is reduced, as shown in FIG. 5, it adheres to the transfer sheet (Z). Separate from the sheet (X). As a result, only a part of the semiconductor chip 11a with a protective film can be peeled off from the adhesive sheet (X), and a part of the semiconductor chip 11a with a protective film can be transferred to the transfer sheet (Z).
  • the transfer method is not limited to the above method.
  • the porous table is protected by protecting the plurality of semiconductor chips 11 with a protective film. It may be arranged so as to be in contact with the surface opposite to the film side, and a part of the semiconductor chip 11a with a protective film may be adsorbed and transferred to the porous table. Adsorption by the porous table may be selectively performed only on a part of the semiconductor chips 11a with a protective film having reduced adhesive strength, or may be performed on the entire surface of the pressure-sensitive adhesive layer (X1). May be good.
  • the average pore diameter of the porous table used at this time is such that the entire surface is sucked with a weak force to adsorb only a part of the semiconductor chip 11a with a protective film whose adhesive force with the adhesive layer (X1) is reduced. From the viewpoint of transfer, it is preferably 60 ⁇ m or less, more preferably 55 ⁇ m or less.
  • the porosity is preferably 30% to 60%, more preferably 45% to 60%.
  • the electrostatic chuck is used as a plurality of semiconductor chips with protective films.
  • the semiconductor chip 11a with a protective film may be gripped and transferred to the electrostatic chuck by arranging the semiconductor chip 11 so as to be in contact with the surface opposite to the protective film side.
  • the gripping by the electrostatic chuck may be selectively performed only on a part of the semiconductor chip 11a with a protective film having a reduced adhesive force, or may be performed on the entire surface of the pressure-sensitive adhesive layer (X1). You may.
  • the adhesive force is partially reduced by separating the pressure-sensitive adhesive layer (X1) gripped by the electrostatic chuck from the electrostatic chuck. Only the semiconductor chip 11a with a protective film can be gripped by the electrostatic chuck and transferred. At this time, from the viewpoint of gripping the entire surface with a weak force and gripping and transferring only a part of the semiconductor chip 11a with a protective film whose adhesive force with the adhesive layer (X1) is reduced, the electrostatic chuck is used.
  • An adhesive sheet in which a base material and an adhesive layer are laminated may be attached as a cushioning material to weaken the gripping force.
  • the method for manufacturing a semiconductor chip with a protective film includes a step of carrying out the peeling method of the present invention including steps (S1) and (S2) or the peeling method of one aspect of the present invention.
  • the step (S1) is a step of carrying out the peeling method of one aspect of the present invention including the steps (S1-1) to (S1-2) in this order. Is preferable because it is possible to efficiently manufacture a semiconductor chip with a protective film from a semiconductor wafer with a protective film.
  • the step (S1) includes the steps (S1-1) to (S1-2) in this order, and also includes a step of carrying out the above-described method for manufacturing a semiconductor wafer with a protective film, so that the efficiency can be obtained from the semiconductor wafer. It is preferable because it is possible to manufacture a semiconductor chip with a protective film well.
  • semiconductor device refers to all devices used in processors, memories, sensors, etc. that can function by utilizing semiconductor characteristics.
  • the method for manufacturing a semiconductor device including a semiconductor chip with a protective film which is one aspect of the present invention, is a step of carrying out the peeling method of the present invention including the steps (S1) and (S2) or the peeling method of one aspect of the present invention. include. Therefore, of the plurality of semiconductor chips with a protective film, only a part of the semiconductor chips with a protective film can be used in the processing process of the semiconductor device.
  • the semiconductor chips with a protective film only a part of the semiconductor chips with a protective film can be subjected to the step of incorporating the semiconductor chip into the semiconductor device. For example, it becomes possible to selectively incorporate only a non-defective semiconductor chip with a protective film into a semiconductor device, which contributes to an improvement in the yield of the semiconductor device.
  • Ten semiconductor chips with a protective film (chip size: 1 mm x 1 mm, chip thickness: 200 ⁇ m, protective film thickness: 25 ⁇ m) are serially connected to the pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet (X) with a chip spacing of 30 ⁇ m.
  • An adhesive sheet (X) to which a plurality of semiconductor chips with a protective film were attached was prepared.
  • the following dicing tape having a structure in which the pressure-sensitive adhesive layer (X1) was laminated on the base material (Y) was used.
  • the arithmetic mean roughness Ra of the surface of the base material (Y) opposite to the surface on which the pressure-sensitive adhesive layer (X1) is formed is 0.1 ⁇ m.
  • ⁇ Dicing tape manufactured by Lintec Corporation, Adwill D-456H
  • the protective film-forming film and curing conditions used to form the protective film of the semiconductor chip with protective film were as follows.
  • -Protective film forming film ADWILL LC2850 (25)
  • -Curing conditions 130 ° C., 2 hours
  • the protective film-forming film contains carbon black, and the protective film formed by curing the protective film-forming film can absorb laser light described later. be.
  • one of the semiconductor chips with protective films was irradiated with laser light from the base material (Y) side.
  • the irradiation conditions were as follows. (Laser light irradiation conditions) -Laser light irradiation device: EO Technologies, CSM2000, solid green laser (wavelength: 532 nm) -Frequency: 20,000Hz to 25,000Hz -Scanning speed: 100 mm / sec-Output: 0.12W to 0.82W ⁇ Beam diameter: 35 ⁇ m

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

La présente invention concerne : un procédé pour retirer une puce semi-conductrice avec un film de protection, ledit procédé comprenant une étape (S1) dans laquelle une pluralité de puces semi-conductrices avec un film de protection sont liées à une couche adhésive (X1), le côté film de protection étant utilisé en tant que surface de liaison, et une étape (S2) dans laquelle les films de protection de certaines puces de la pluralité de puces semi-conductrices avec un film de protection sont au moins partiellement sublimés, produisant ainsi un gaz de façon à réduire l'adhérence entre ces puces semi-conductrice avec un film de protection et la couche adhésive (X1) ; un procédé de fabrication d'une puce semi-conductrice avec un film de protection, ledit procédé comprenant une étape dans laquelle le procédé décrit ci-dessus pour retirer une puce semi-conductrice avec un film de protection est réalisé ; et un procédé de fabrication d'un dispositif semi-conducteur contenant une puce semi-conductrice avec un film de protection, ledit procédé comprenant une étape dans laquelle le procédé décrit ci-dessus pour retirer une puce semi-conductrice avec un film de protection est réalisé.
PCT/JP2021/001743 2020-01-27 2021-01-20 Procédé pour retirer une puce semi-conductrice avec un film de protection WO2021153361A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257222A (ja) * 2000-03-09 2001-09-21 Hitachi Ltd 半導体実装装置およびその製造方法
JP2004281659A (ja) * 2003-03-14 2004-10-07 Seiko Epson Corp 保持部材及び半導体装置の製造方法
WO2019131850A1 (fr) * 2017-12-28 2019-07-04 日東電工株式会社 Film adhérant à la surface arrière d'un semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594853B2 (ja) 1999-11-08 2004-12-02 日東電工株式会社 加熱剥離型粘着シート

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257222A (ja) * 2000-03-09 2001-09-21 Hitachi Ltd 半導体実装装置およびその製造方法
JP2004281659A (ja) * 2003-03-14 2004-10-07 Seiko Epson Corp 保持部材及び半導体装置の製造方法
WO2019131850A1 (fr) * 2017-12-28 2019-07-04 日東電工株式会社 Film adhérant à la surface arrière d'un semi-conducteur

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