WO2021149372A1 - Dispositif électroluminescent et son procédé de fabrication - Google Patents

Dispositif électroluminescent et son procédé de fabrication Download PDF

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Publication number
WO2021149372A1
WO2021149372A1 PCT/JP2020/045491 JP2020045491W WO2021149372A1 WO 2021149372 A1 WO2021149372 A1 WO 2021149372A1 JP 2020045491 W JP2020045491 W JP 2020045491W WO 2021149372 A1 WO2021149372 A1 WO 2021149372A1
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WO
WIPO (PCT)
Prior art keywords
lens
light emitting
substrate
emitting device
film
Prior art date
Application number
PCT/JP2020/045491
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English (en)
Japanese (ja)
Inventor
山本　篤志
Original Assignee
ソニーセミコンダクタソリューションズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニーセミコンダクタソリューションズ株式会社 filed Critical ソニーセミコンダクタソリューションズ株式会社
Publication of WO2021149372A1 publication Critical patent/WO2021149372A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • This disclosure relates to a light emitting device and a method for manufacturing the same.
  • the light emitting device on the first side surface may further include a third lens formed of a material separated from the film and incident with light passing through the first and second lenses. This makes it possible, for example, to preferably collimate light with the first, second, and third lenses.
  • the second lens may include at least one of a concave lens, a convex lens, a flat lens, and a binary lens. This makes it possible to mold the light with an appropriate lens according to the purpose of using the light.
  • the light emitting device on the first side surface may further include an inorganic film provided on the second surface of the substrate between the first lenses. This makes it possible to prevent light from passing through a portion other than the first lens, for example.
  • the first lens may include at least one of a concave lens, a convex lens, and a binary lens. This makes it possible to mold the light with an appropriate lens according to the purpose of using the light.
  • the substrate 51 is a semiconductor substrate such as a GaAs (gallium arsenide) substrate.
  • FIG. 3 shows the front surface S1 of the substrate 51 facing the ⁇ Z direction and the back surface S2 of the substrate 51 facing the + Z direction.
  • the surface S1 is an example of the first surface of the present disclosure.
  • the back surface S2 is an example of the second surface of the present disclosure.
  • the correction lens 46 of the present embodiment is arranged above the substrate 51 and the lens film 56, and is formed of a material separated from the substrate 51 and the lens film 56.
  • the correction lens 46 is an example of the third lens of the present disclosure.
  • FIG. 9 is a cross-sectional view showing the structure of the light emitting device 1 of another modified example of the first embodiment.
  • the light emitting device 1 shown in A of FIG. 9 is formed on a plurality of first lenses 71 provided on the substrate 51 and a lens film 56 provided on the surface of the first lens 71. It is provided with a second lens 72 provided.
  • the light emitting device 1 shown in FIG. 9A is further provided on a lens film 57 provided on the surface of the second lens 72, and further a second lens 73 in which light passing through the first and second lenses 71 and 72 is incident. It has.
  • the second lenses 72 and 73 are examples of the front lens and the rear lens of the present disclosure, respectively.
  • the light emitting device 1 shown in FIG. 9A further includes the above-mentioned correction lens 46 arranged above the substrate 51 and the lens films 56 and 57 (see FIG. 4), but the illustration thereof is omitted. The omission of the correction lens 46 is the same for other modifications described later.
  • the second lens 73 of this modification is provided on the surface (upper surface) of the lens film 57 as a part of the lens film 57.
  • the lens film 57 is made of a material different from that of the lens film 56, and is, for example, made of a material that is transparent to the light from the light emitting element 53 and has a refractive index different from that of the lens film 56.
  • Examples of the lens film 57 include SiO 2 film (silicon oxide film), SiON film (silicon oxynitride film), SiN film (silicon nitride film), SiOC film (silicon carbide film), SiC film (silicon carbide film), and the like. It is an inorganic film such as an amorphous Si (silicon) film or an organic film.
  • the second lens 73 is a convex lens.
  • Silicon film SiOC film (silicon carbide film), SiC film (silicon carbide film), TiO 2 film (titanium oxide film), TiN film (titanium nitride film), TiON film (titanium pentoxide film), Al 2 O It contains one or more of 3 (aluminum oxide film), Nb 2 O 5 film (niobium oxide film), ZrO 2 film (zirconium oxide film), and Ta 2 O 5 film (tantalum oxide film).
  • an inorganic film 75 is formed on the entire back surface S2 of the substrate 51 except for the region of the first lens 71. This makes it possible to effectively prevent light from passing through a portion other than the first lens 71, for example.
  • the resist portion (resist pattern) P3 of the baked resist film 82 is transferred to the substrate 51 by dry etching (C in FIG. 16).
  • the back surface S2 of the substrate 51 is processed by dry etching, and a plurality of convex portions having the same shape as the resist portion P3 before the dry etching, that is, a convex lens (first lens 71) is formed on the back surface S2 of the substrate 51. It is formed.
  • the correction lens 46 described above is subsequently arranged above the first lens 71 via the second lens 72 (see B in FIG. 6). In this way, the light emitting device 1 shown in FIG. 6B is manufactured.
  • the second lens is One or more pre-stage lenses provided on a first film provided on the surface of the first lens and incident with light passing through the first lens.
  • One or more rear-stage lenses provided on a second film provided on the surface of the front-stage lens and incident with light passing through the front-stage lens.
  • the substrate is a semiconductor substrate containing gallium (Ga) and arsenic (As).

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Le problème décrit par la présente invention est de fournir un dispositif électroluminescent capable de mettre en forme de manière appropriée la lumière provenant d'une pluralité d'éléments électroluminescents et un procédé de fabrication du dispositif électroluminescent. La solution selon la présente invention porte sur un dispositif électroluminescent qui comprend un substrat, une pluralité d'éléments électroluminescents disposés sur un premier côté de surface du substrat, une ou plusieurs premières lentilles qui sont disposées sur un second côté de surface du substrat et sur lesquelles la lumière émise par la pluralité d'éléments électroluminescents frappe, et une ou plusieurs secondes lentilles qui sont disposées sur un film disposé sur la surface des premières lentilles et sur laquelle la lumière transmise à travers les premières lentilles frappe.
PCT/JP2020/045491 2020-01-20 2020-12-07 Dispositif électroluminescent et son procédé de fabrication WO2021149372A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-006943 2020-01-20
JP2020006943A JP2021114556A (ja) 2020-01-20 2020-01-20 発光装置およびその製造方法

Publications (1)

Publication Number Publication Date
WO2021149372A1 true WO2021149372A1 (fr) 2021-07-29

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PCT/JP2020/045491 WO2021149372A1 (fr) 2020-01-20 2020-12-07 Dispositif électroluminescent et son procédé de fabrication

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JP (1) JP2021114556A (fr)
WO (1) WO2021149372A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022145186A1 (fr) * 2021-01-04 2022-07-07 ソニーセミコンダクタソリューションズ株式会社 Dispositif électroluminescent et son procédé de fabrication
WO2023153164A1 (fr) * 2022-02-08 2023-08-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif électroluminescent, procédé de fabrication de dispositif électroluminescent et dispositif de mesure de distance

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115943533A (zh) * 2020-06-22 2023-04-07 西铁城电子株式会社 Vcsel模块

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11202103A (ja) * 1998-01-13 1999-07-30 Ricoh Co Ltd マイクロレンズアレイの製造方法
US6353502B1 (en) * 2000-06-13 2002-03-05 Eastman Kodak Company VCSEL field correction
JP2005159005A (ja) * 2003-11-26 2005-06-16 Seiko Epson Corp 光学素子およびその製造方法
JP2009252779A (ja) * 2008-04-01 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子の実装構造および光半導体素子の実装方法
JP2013541854A (ja) * 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
WO2014017652A1 (fr) * 2012-07-27 2014-01-30 シャープ株式会社 Dispositif d'éclairage
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
WO2019017044A1 (fr) * 2017-07-18 2019-01-24 ソニー株式会社 Dispositif électroluminescent et réseau de dispositifs électroluminescents
EP3447862A1 (fr) * 2017-08-23 2019-02-27 Koninklijke Philips N.V. Réseau de vcsel à niveau tranche commun, dispositif optique intégré
JP2019165198A (ja) * 2018-03-19 2019-09-26 株式会社リコー 面発光レーザアレイ、検出装置およびレーザ装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11202103A (ja) * 1998-01-13 1999-07-30 Ricoh Co Ltd マイクロレンズアレイの製造方法
US6353502B1 (en) * 2000-06-13 2002-03-05 Eastman Kodak Company VCSEL field correction
JP2005159005A (ja) * 2003-11-26 2005-06-16 Seiko Epson Corp 光学素子およびその製造方法
JP2009252779A (ja) * 2008-04-01 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子の実装構造および光半導体素子の実装方法
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
JP2013541854A (ja) * 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
WO2014017652A1 (fr) * 2012-07-27 2014-01-30 シャープ株式会社 Dispositif d'éclairage
WO2019017044A1 (fr) * 2017-07-18 2019-01-24 ソニー株式会社 Dispositif électroluminescent et réseau de dispositifs électroluminescents
EP3447862A1 (fr) * 2017-08-23 2019-02-27 Koninklijke Philips N.V. Réseau de vcsel à niveau tranche commun, dispositif optique intégré
JP2019165198A (ja) * 2018-03-19 2019-09-26 株式会社リコー 面発光レーザアレイ、検出装置およびレーザ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022145186A1 (fr) * 2021-01-04 2022-07-07 ソニーセミコンダクタソリューションズ株式会社 Dispositif électroluminescent et son procédé de fabrication
WO2023153164A1 (fr) * 2022-02-08 2023-08-17 ソニーセミコンダクタソリューションズ株式会社 Dispositif électroluminescent, procédé de fabrication de dispositif électroluminescent et dispositif de mesure de distance

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