WO2021138986A1 - 具有开合法拉第组件的等离子体处理系统及其开合法拉第组件 - Google Patents

具有开合法拉第组件的等离子体处理系统及其开合法拉第组件 Download PDF

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Publication number
WO2021138986A1
WO2021138986A1 PCT/CN2020/077322 CN2020077322W WO2021138986A1 WO 2021138986 A1 WO2021138986 A1 WO 2021138986A1 CN 2020077322 W CN2020077322 W CN 2020077322W WO 2021138986 A1 WO2021138986 A1 WO 2021138986A1
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WIPO (PCT)
Prior art keywords
ring segment
coil
knob
radio frequency
coupling window
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PCT/CN2020/077322
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English (en)
French (fr)
Inventor
刘海洋
胡冬冬
刘小波
李娜
程实然
郭颂
吴志浩
许开东
Original Assignee
江苏鲁汶仪器有限公司
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Priority to JP2022513436A priority Critical patent/JP7364292B2/ja
Publication of WO2021138986A1 publication Critical patent/WO2021138986A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only

Definitions

  • the invention relates to a plasma processing system, in particular to a plasma processing system with a Raday cleaning component of an opening method, and belongs to the technical field of semiconductor integrated circuit manufacturing.
  • etching is one of the most important processes.
  • Plasma etching is one of the commonly used etching methods.
  • etching occurs in a vacuum reaction chamber, which usually includes electrostatic adsorption.
  • the chuck is used to carry the functions of adsorbing wafers, radio frequency loads and cooling wafers.
  • the electrostatic adsorption chuck is usually placed on the susceptor in the middle of the vacuum processing chamber.
  • the circle is located on the upper surface of the electrostatic adsorption chuck, and a radio frequency is applied to the electrode on the top of the susceptor, so that the plasma of the introduced reaction gas is formed in the processing chamber to process the wafer.
  • the plasma is accelerated to the surface of the metal material under the action of the bias voltage, and the metal particles sputtered from the surface of the etching material will adhere to all exposed surfaces in the cavity. Including the inner wall of the cavity and the coupling window on the top of the cavity, causing pollution.
  • the entire cleaning process Since the cavity is grounded and the top coupling window is made of insulating material, the top RF loads RF power to excite the plasma during the cleaning process.
  • the active plasma will clean the grounded cavity, but it has almost no cleaning effect on the coupling window. Over time, the contaminants stack up more severely, and the deposits fall off and contaminate the wafers.
  • a Faraday layer can be used.
  • the use of the Faraday layer in the plasma processing chamber can reduce the erosion of the cavity material by the plasma, but there is still some plasma that can pass through the slits between the Faraday layers to contaminate the coupling window.
  • the Faraday layer is placed between the RF coil and the coupling window to reduce the erosion of the cavity wall by ions induced by the RF electric field.
  • This shield can be grounded or floating. When the Faraday shield is grounded, the intensity of the radio frequency electric field is reduced due to the reduced capacitive coupling, which makes it very difficult to initiate plasma discharge.
  • the plasma is a floating design, it will not excessively hinder the excitation of the plasma, but it is not very effective in preventing the plasma from eroding the cavity.
  • the present invention provides an opening method pull assembly, which is installed outside the coupling window of a plasma processing system.
  • each ring segment constituting the opening method pull assembly When cleaning, each ring segment constituting the opening method pull assembly is in a closed state, It can cover the area where the coupling window is in contact with the plasma.
  • the inner arc surface of each ring segment is on the concentric circle a, and the outer arc surface of each ring segment is on the concentric circle b;
  • the ring segments constituting the opening method pull assembly are in an open state, and the middle coil on the opening method pull assembly can be completely exposed.
  • the first cross section of each ring segment can be inscribed with the maximum opening.
  • the circle is tangent, and the diameter of the largest open inscribed circle is larger than the outer diameter of the middle coil. It can be seen that the opening method Raday assembly of the present invention can effectively avoid adverse effects on wafer etching, and when cleaning the coupling window, the Faraday layer can be used to thoroughly clean the coupling window.
  • An open-leg pull assembly including a Faraday layer, the Faraday layer includes a knob, a radio frequency access block, a lifting mechanism that drives the radio frequency access block to move, and a plurality of ring fans that are evenly distributed on the outer side of the O axis and arranged in separate bodies Piece;
  • the knob is in an annular shape as a whole, and is rotatably arranged concentrically on the outer side of the O axis, and is equidistantly provided along the annular surface of the knob with guide chutes matching the number of ring segments;
  • Each ring segment includes an inner circular arc surface, an outer circular arc surface, and a first side profile and a second side profile that connect the same sides of the inner circular arc surface and the outer circular arc surface respectively; at the same time, each ring
  • the fan pieces are respectively provided with two positioning members on the fan surface close to the outer arc surface; the two positioning members are the first and second positioning members respectively;
  • each ring segment can rotate synchronously around the first positioning member provided on the respective fan surface, and the second positioning member is connected to the guide chute on the knob to limit the rotation range to the first limit position , Between the second extreme position;
  • each ring segment When each ring segment is in the first limit position, the Faraday layer is in a closed state. At this time, the inner arc surface of each ring segment is on the circumference of the concentric circle a outside the O axis and is arranged equidistantly. The outer arc surface of is on the circumference of the concentric circle b outside the O axis and is arranged equidistantly, and the inner diameter of the concentric circle a is smaller than the inner diameter of the concentric circle b;
  • each ring segment When each ring segment is in the second limit position, the Faraday layer is in the open state. At this time, the first side profile of each ring segment can be tangent to the maximum open inscribed circle, and the inner side of the knob corresponds to the maximum open inscribed circle The area is completely exposed;
  • the radio frequency access block is connected with the power output end of the lifting mechanism
  • the radio frequency access block can move toward the Faraday layer to electrically connect with the inner arc surface of each ring segment of the Faraday layer in the closed state, or move away from the Faraday layer to be in the open state.
  • the Faraday layer is separated.
  • the guide chute is a strip-shaped groove.
  • the strip grooves are arranged obliquely.
  • first and second side profiles are both flat and straight; or the first side profile is a convex arc profile, and the second profile is a concave arc profile. .
  • the lifting mechanism includes a cylinder, a cylinder adapter plate and a cylinder adapter insulating rod; the power output end of the cylinder is sequentially fixed by the cylinder adapter plate, the cylinder adapter insulating rod and the radio frequency access block.
  • first and second positioning members are pins.
  • Another technical objective of the present invention is to provide a plasma processing system with an opening method pull assembly, including a coupling window, and the above opening method pull assembly is arranged on the outside of the coupling window;
  • Each ring segment is positioned and connected with the coupling window through the first positioning member provided on the respective segment surface;
  • the coupling window is provided with a rotating positioning surface at a position corresponding to the outer edge of the knob; the knob can be rotated around the O axis through the positioning of the rotating positioning surface.
  • a coil structure is provided on the outside of the open-leg assembly, including a middle coil; the middle coil is orthographically projected on the inner area of the knob, and the outer diameter of the middle coil is not greater than the diameter of the largest open inscribed circle;
  • each ring segment When each ring segment is in the first limit position, the inner arc surface of each ring segment in the closed state is connected to the Faraday RF power supply through the radio frequency access block;
  • the coil structure further includes an edge coil that is independently arranged relative to the middle coil; the edge coil can be orthographically projected on the inner area of the knob;
  • the middle coil and the edge coil are completely exposed on the surface of the coupling window; the middle coil and the edge coil are both connected to the coil radio frequency power supply.
  • the first positioning member is a first pin;
  • the coupling window is provided with a pin hole at a position corresponding to the first pin on each ring segment; each ring segment passes through the first pin provided on the respective fan surface.
  • the pins are connected in a one-to-one correspondence with each pin hole on the coupling window;
  • a middle fixing hole is provided at the middle position of the coupling window; the middle fixing hole is equipped with a ceramic air inlet nozzle, and the air outlet part of the ceramic air inlet nozzle is equipped with a nozzle.
  • reaction chamber also includes a reaction chamber; the upper end of the reaction chamber is opened; and the open end of the reaction chamber is sealedly connected with a cavity cover; the middle of the cavity cover is provided with a window matching the coupling window;
  • a susceptor is arranged in the reaction chamber; the top of the susceptor is fixedly connected with the bias electrode, the bias electrode is directly opposite to the nozzle, and the top surface of the bias electrode adsorbs the wafer;
  • a shielding box is fixed on the top of the reaction chamber, the cross-section of the shielding box is in a U-shaped structure, and the shielding box is in a sealed connection with the cavity cover;
  • the radio frequency access block and the lifting mechanism are both arranged in the shielding box; one end of the lifting mechanism is fixed to the top of the shielding box, and the other end is fixed to the radio frequency access block.
  • Another objective of the present invention is to provide a method based on a plasma processing system with a Raday assembly having an opening method, which includes two processes, namely a coupling window cleaning process and a wafer etching process, wherein,
  • the cylinder goes down, and the radio frequency access block is pressed against each ring segment of the Faraday layer in the closed state close to the part of the inner circular arc surface, so that the radio frequency access block is conductively connected to each ring segment;
  • the present invention has the following beneficial effects:
  • the opening method pull assembly of the present invention is installed outside the coupling window of the plasma processing system.
  • the ring segments constituting the opening method pull assembly are in a closed state, which can cover the coupling window being in contact with the plasma
  • the inner arc surface of each ring segment is on the concentric circle a, while the outer arc surface of each ring segment is on the concentric circle b;
  • Each ring segment is in an open state, which can completely expose the middle coil on the opening and pulling assembly.
  • the first section of each ring segment can be tangent to the maximum open inscribed circle, and the maximum open inscribed circle
  • the diameter of is greater than the outer diameter of the middle coil.
  • the opening method Raday assembly of the present invention can effectively avoid adverse effects on wafer etching, and when cleaning the coupling window, the Faraday layer can be used to thoroughly clean the coupling window. That is, the present invention is beneficial to solve the problem of the reduction of the radio frequency electric field intensity caused by the traditional Faraday shielding unit, is beneficial to cleaning the coupling window, and does not affect the intensity of the radio frequency electric field, and is convenient for operation.
  • Figure 1 discloses a plasma processing system with a Raday assembly of opening method
  • FIG. 2 is a schematic diagram of the structure of the coupling window in FIG. 1;
  • Fig. 3 is a schematic diagram of the structure of the opening and closing mechanism in Fig. 1 when the pull-out assembly is in a closed state;
  • FIG. 4 is a schematic diagram of the structure when the pull-out assembly in FIG. 3 is in an open state
  • FIG. 5 is a schematic diagram of the structure of the fan-shaped piece in FIG. 3;
  • Fig. 6 is a flowchart of the method of the present invention based on a plasma processing system with a Raday assembly having an opening method
  • spatially relative terms can be used here, such as “above”, “above”, “above the surface”, “above”, etc., to describe as shown in the figure Shows the spatial positional relationship between one device or feature and other devices or features. It should be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation of the device described in the figure. For example, if the device in the drawing is turned upside down, then a device described as “above other devices or structures” or “above other devices or structures” will then be positioned as “below the other devices or structures” or “on Under other devices or structures”. Thus, the exemplary term “above” may include both orientations “above” and "below". The device can also be positioned in other different ways (rotated by 90 degrees or in other orientations).
  • the present invention discloses a Faraday assembly 14 including a Faraday layer, as shown in Figures 1-5.
  • the Faraday layer includes a knob 10, a radio frequency access block 22, and a lifting mechanism that drives the radio frequency access block 22 to move.
  • the material of the knob 10 is preferably an insulating material ULTEM-1000, the rotation center of the knob 10 is the central axis o axis of the coupling window 7, and the rotation positioning surface 8 is the rotation positioning surface 8 provided on the edge of the coupling window 7.
  • the power source of the knob 10 It can be driven manually, or driven by an external electrode or driven by an external rotary cylinder 19, which is not described in the present invention.
  • Each ring segment 14-1 includes an inner circular arc surface 14-1b, an outer circular arc surface 14-1d, and a first connecting the same sides of the inner circular arc surface 14-1b and the outer circular arc surface 14-1d.
  • each ring segment 14-1 is provided with two positioning parts on the fan surface close to the outer arc surface 14-1d; the two positioning parts are the first and second positioning parts respectively;
  • the first and second positioning members are pins, and the first and second positioning members are the first and second pins 12 and 13 respectively.
  • Each ring segment 14-1 is driven by the knob 10 to rotate synchronously around the first positioning member provided on the respective fan surface, and the rotation is restricted by the guiding connection between the second positioning member and the guide chute 11 on the knob 10
  • the amplitude is between the first limit position and the second limit position; in the present invention, the guide chute 11 is a strip-shaped groove, and the strip-shaped groove is arranged obliquely.
  • each ring segment 14-1 When each ring segment 14-1 is at the first limit position, the Faraday layer is in a closed state. At this time, the inner circular arc surface 14-1b of each ring segment 14-1 is on the circumference of the concentric circle a outside the O axis. Arranged equidistantly, and the outer arc surface 14-1d of each ring segment 14-1 is located on the circumference of the concentric circle b outside the O axis and arranged equidistantly, and the inner diameter of the concentric circle a is smaller than the inner diameter of the concentric circle b;
  • each ring segment 14-1 When each ring segment 14-1 is in the second limit position, the Faraday layer is in an open state. At this time, the first side profile 14-1a of each ring segment 14-1 can be tangent to the maximum open inscribed circle, and the knob 10 The inner side and the area corresponding to the largest open inscribed circle are completely exposed;
  • the radio frequency access block 22 is connected to the power output end of the lifting mechanism; in the present invention, the lifting mechanism includes a cylinder 19, a cylinder adapter plate 20, and a cylinder adapter insulating rod 21; the power output end of the cylinder is sequentially connected through the cylinder The plate 20, the cylinder transfer insulating rod 21 and the radio frequency access block 22 are fixed.
  • the radio frequency access block 22 can move toward the Faraday layer to electrically connect with the inner arc surface 14-1b of each ring segment 14-1 of the Faraday layer in the closed state, or away from the Faraday layer Move to separate from the open Faraday layer.
  • the resulting plasma processing system with opening method Raday assembly 14 includes the coupling window 7.
  • the material of the coupling window 7 is generally ceramic.
  • an air inlet nozzle 9 is installed in the middle part through a fixed hole in the middle part, and the gas outlet part of the ceramic air inlet nozzle 16 is equipped with a nozzle to provide a process for the process in the chamber Gas/cleaning gas, the reaction chamber 1 has a bias electrode 4 and a wafer 5 directly above the bias electrode 4; a coil structure is installed above the coupling window 7.
  • the coil is a three-dimensional coil 17, and the three-dimensional coil 17 includes The center coil and the edge coil are two independent parts. Both the center coil and the edge coil are coupled by two single three-dimensional coils. Each single three-dimensional coil has 2 layers, 3 layers or even more layers in height. 2 turns, 3 turns or even more turns. One end of the two single three-dimensional coils is connected together to connect to the external radio frequency device, and the other end is also connected to ground; the above-mentioned opening leg assembly 14 is located in the coupling window 7 and the three-dimensional type. The middle layer of the coil 17.
  • each ring segment 14-1 is positioned and connected to the coupling window 7 through the first positioning member provided on the respective fan surface; the coupling window 7 is provided with a rotary positioning surface 8 at a position corresponding to the outer edge of the knob 10; 10 can be rotated around the O axis by the positioning of the rotating positioning surface 8.
  • the three-dimensional coil 17 is orthographically projected on the inner area of the knob 10, and the outer diameter of the three-dimensional coil 17 is not greater than the diameter of the largest open inscribed circle; that is, both the middle coil and the edge coil can be orthographically projected on the outer area of the knob 10, and The outer diameter of the edge coil is not greater than the diameter of the largest open inscribed circle.
  • each ring segment 14-1 When each ring segment 14-1 is in the first limit position, the inner circular arc surface 14-1b of each ring segment 14-1 in the closed state is connected to the Faraday RF power supply through the radio frequency access block 22;
  • each ring segment 14-1 When each ring segment 14-1 is in the second limit position, the three-dimensional coil 17 is completely exposed on the surface of the coupling window 7; the middle coil and the edge coil are both connected to the coil radio frequency power supply.
  • the first positioning member is a first pin 12; the coupling window 7 is provided with a pin hole 15 at a position corresponding to the first pin 12 on each ring segment 14-1; each ring segment 14-1 passes The first pins 12 provided on the respective fan surfaces are connected in a one-to-one correspondence with the pin holes 15 on the coupling window 7;
  • reaction chamber 1 also includes a reaction chamber 1; the upper end of the reaction chamber 1 is opened; and the open end of the reaction chamber 1 is sealed with a cavity cover 6; the middle position of the cavity cover 6 is provided with a matching window 7 window;
  • a susceptor 3 is provided in the reaction chamber 1; the top of the susceptor 3 is fixedly connected to the bias electrode 4, the bias electrode 4 is directly opposite to the nozzle, and the top surface of the bias electrode 4 adsorbs the wafer 5;
  • the upper part of the opening of the coupling window 7 is insulated with an insulator from the middle coil.
  • the entire upper radio frequency shield is shielded by the shielding box 18.
  • the opening of the second part 14 is used to access the radio frequency access block 22 and the lifting mechanism. They are also respectively fixed in the shielding box 18, one end of the lifting mechanism is fixed to the top of the shielding box 18, and the other end is fixed to the radio frequency access block 22.
  • the lifting mechanism includes a cylinder, a cylinder adapter plate 20, and a cylinder adapter insulating rod 21.
  • the material of the cylinder adapter plate 20 is preferably 316L stainless steel.
  • the material of the cylinder adapter insulating rod 21 is preferably ULTEM-1000, which provides the cylinder adapter plate 20 and radio frequency connection
  • the insulating support between the inlet blocks 22 also leaves enough space for the central ceramic air inlet.
  • the material of the radio frequency access block 22 is preferably copper or aluminum, and the radio frequency access block 22 is connected to the radio frequency.
  • Another objective of the present invention is to provide a method based on a plasma processing system having an opening method Raday assembly 14, as shown in FIG. 6, including two processes, namely the coupling window 7 cleaning process and the wafer 5 engraving process.
  • Etch process in which,
  • Plasma etching is performed on the surface of wafer 5;
  • the Faraday layer is in an open state.
  • the knob 10 is positioned by the rotation positioning surface 8 on the coupling window 7, and rotates clockwise around the O axis.
  • the guide chute 11 on the knob 10 drives the second pin 13 of the ring segment 14-1 to rotate, and the second pin 13
  • the ring segment 14-1 is controlled to rotate around the first pin 12, and the first pin 12 rotates in cooperation with the pin hole 15 on the coupling window 7, and finally the Faraday layer is in a closed state.
  • the inner portion of each ring segment 14-1 The arc surface 14-1b is located on the circumference of the concentric circle a outside the O axis, and the outer arc surface 14-1d of each ring segment 14-1 is located on the circumference of the concentric circle b outside the O axis;
  • the cylinder goes down, the radio frequency access block 22 is driven down by the cylinder adapter plate 20 and the cylinder adapter insulating rod 21, and finally the radio frequency access block 22 is pressed against each ring sector 14-1, and the radio frequency
  • the access block 22 presses each ring segment 14-1 of the Faraday layer in the closed state close to the part of the inner circular arc surface 14-1b, so that the radio frequency access block 22 is conductively connected to each ring segment 14-1;
  • the Faraday layer is connected to the Faraday layer through the radio frequency access block 22 to meet the demand of radio frequency power;
  • the rotation angle can at least enable the rotated ring segment 14-1 to cover the two adjacent ring segments 14-1 before rotation.
  • the slits between the ring segments 14-1 and then maintain this state to continue cleaning for a period of time.
  • the coupling window 7 can be cleaned well; on the contrary, when two adjacent ring segments 14- There is no gap between 1 and completely covers the area where the coupling window 7 is in contact with the plasma, so there is no need to push the Faraday layer to rotate.
  • the cylinder moves up, and the radio frequency access block 22 is driven up by the cylinder adapter plate 20 and the cylinder adapter insulating rod 21.
  • the radio frequency access block 22 is separated from each ring segment 14-1, and the knob 10 passes through
  • the positioning of the rotary positioning surface 8 on the coupling window 7 rotates counterclockwise around the O axis
  • the guide chute 11 on the knob 10 drives the second pin 13 of the ring segment 14-1 to rotate
  • the second pin 13 controls the ring segment 14 -1 rotates around the first pin 12
  • the first pin 12 rotates with the pin hole 15 of the coupling window 7, and finally realizes that the Faraday layer is in an open state without any shielding of the middle coil, that is, the middle coil is completely exposed to the coupling window 7,
  • the etching process can be started.
  • the opening and closing of the Faraday assembly 14 of the present invention can fully cover or partially cover the area where the coupling window 7 contacts the plasma, ensuring full coverage of the cleaning.
  • the opening and closing of the Faraday layer are controlled to cooperate with the etching and cleaning processes respectively. , It realizes the thorough cleaning of the chamber, especially the coupling window 7.
  • the opening and pulling layer is in the open state, there is no shielding for the excitation of the RF coil, that is, the existence of the opening and pulling layer will not have any influence on the excitation of the coil.

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Abstract

本发明公开了一种具有开合法拉第组件的等离子体处理系统及其开合法拉第组件。开合法拉第组件包括法拉第层，法拉第层包括旋钮、射频接入块、升降机构、若干环扇片；各环扇片均在旋钮的带动下能够同步围绕各自扇面上所设置的第一定位件旋转，并通过第二定位件与旋钮上的导向滑槽的导向连接而限制旋转幅度在第一极限位置、第二极限位置之间；当各环扇片处于第一极限位置时法拉第层处于闭合状态；当各环扇片处于第二极限位置时法拉第层处于打开状态，此时旋钮内侧中心区域完全暴露；因此本发明通过控制法拉第层的开、合来配合刻蚀和清洗工艺，实现了耦合窗的彻底清洗，同时刻蚀工艺时开合法拉第层处于打开状态，不会对刻蚀工艺有任何影响。

Description

具有开合法拉第组件的等离子体处理系统及其开合法拉第组件 技术领域
本发明涉及一种等离子体处理系统，尤其是一种具有开合法拉第清洗组件的等离子体处理系统，属于半导体集成电路制造技术领域。
背景技术
在半导体集成电路制造工艺中，刻蚀是其中最为重要的一道工序，其中等离子体刻蚀是常用的刻蚀方式之一，通常刻蚀发生在真空反应腔室内，通常真空反应腔室内包括静电吸附卡盘，用于承载吸附晶圆、射频负载及冷却晶圆等作用,目前在对半导体器件等的制作过程中，通常将静电吸附卡盘放置在真空的处理腔室中部的基座上，晶圆位于静电吸附卡盘的上表面，在基座顶部的电极中施加射频，使在处理腔室内形成引入的反应气体的等离子体对晶圆进行加工处理。
目前在进行一些非挥发性金属材料的刻蚀过程中，等离子体在偏压的作用下加速达到金属材料表面，从刻蚀材料表面溅射出的金属颗粒会附着在腔体内所有暴露的表面上，包括腔体内壁及腔体顶部的耦合窗，造成污染，为了解决污染，需要在腔室内部通入清洗气体，并在顶部加载射频功率对清洗气体进行电离，带走这些污染颗粒，整个清洗过程中，由于腔体是接地的，且顶部耦合窗为绝缘材质，所以清洗过程中顶部射频加载射频功率激发等离子体，活性的等离子体会清洗接地的腔体，但对耦合窗清洗效果几乎没有，随着时间的推移污染物叠加更加严重，出现沉积物脱落污染晶圆的现象。
为了彻底清洁耦合窗，可以采用法拉第层。法拉第层用于等离子体处理腔室中可以减少等离子体对腔体材料的侵蚀，但仍有部分等离子体可以穿过法拉第层间的狭缝而污染耦合窗。法拉第层置于射频线圈与耦合窗之间可以减少由射频电场诱发的离子对腔壁的侵蚀。这种屏蔽可以是接地的也可以是浮动的。当法拉第屏蔽接地时，由于电容耦合减少使射频电场强度降低，导致引发等离子体放电变得非常困难。当等离子体为浮动设计时，不会过度妨碍等离子体的激发，但对于防止等离子体侵蚀腔体不是十分有效。
发明内容
本发明针对现有技术的不足，提供一种开合法拉第组件，其配装在等离子体处理系统的耦合窗外，清洗时，构成所述开合法拉第组件的各环扇片处于闭合状 态，能够覆盖耦合窗正与等离子体接触的区域，此时各环扇片的内圆弧面处于同心圆a上，而各环扇片的外圆弧面则处于同心圆b上；而刻蚀时，构成所述开合法拉第组件的各环扇片处于打开状态，能够将位于开合法拉第组件上的中部线圈完全暴露，此时各环扇片的第一截面均能够与最大打开内切圆相切，最大打开内切圆的直径大于中部线圈的外径。由此可知，本发明所述的开合法拉第组件，可以有效地避免对晶圆刻蚀造成的不良影响，而对耦合窗清洗时，又能够利用法拉第层来实现耦合窗的彻底清洗。
为实现上述的技术方案，本发明将采取如下的技术方案：
一种开合法拉第组件，包括法拉第层，所述的法拉第层包括旋钮、射频接入块、驱动射频接入块移动的升降机构、若干均布在O轴外侧并呈分体设置的环扇片；其中：
所述的旋钮，整体呈圆环状，可旋转地同心设置在O轴外侧，并沿着旋钮的环面等距设置有数量与环扇片数量匹配的导向滑槽；
每一块环扇片均包括内圆弧面、外圆弧面以及将内圆弧面、外圆弧面的同侧分别连接的第一侧型面、第二侧型面；同时，每一块环扇片均在靠近外圆弧面的扇面上分别设置有两根定位件；所述的两根定位件分别为第一、第二定位件；
各环扇片均在旋钮的带动下能够同步围绕各自扇面上所设置的第一定位件旋转，并通过第二定位件与旋钮上的导向滑槽的导向连接而限制旋转幅度在第一极限位置、第二极限位置之间；
当各环扇片处于第一极限位置时，法拉第层处于闭合状态，此时各环扇片的内圆弧面处于O轴外侧的同心圆a的圆周上并等距布置，而各环扇片的外圆弧面则处于O轴外侧的同心圆b的圆周上并等距布置，且同心圆a的内径小于同心圆b的内径；
当各环扇片处于第二极限位置时，法拉第层处于打开状态，此时各环扇片的第一侧型面能够与最大打开内切圆相切，旋钮内侧与最大打开内切圆对应的区域完全暴露；
射频接入块与升降机构的动力输出端连接；
在升降机构的动力驱动下，射频接入块能够朝向法拉第层移动，以与处于闭合状态的法拉第层的各环扇片的内圆弧面导电连接，或者背离法拉第层移动，以与处于打开状态的法拉第层分离。
进一步地，所述的导向滑槽为条形槽。
进一步地，所述条形槽倾斜设置。
进一步地，所述第一、第二侧型面均为平直型面；或者所述第一侧型面为外凸弧形型面、而第二侧型面则为内凹弧形型面。
进一步地，所述的升降机构包括气缸、气缸转接板以及气缸转接绝缘杆；气缸的动力输出端依次通过气缸转接板、气缸转接绝缘杆与射频接入块固定。
进一步地，所述的第一、第二定位件均为销钉。
本发明的另一个技术目的是提供一种具有开合法拉第组件的等离子体处理系统，包括耦合窗，耦合窗外侧设置有如上所述的开合法拉第组件；
各环扇片均通过各自扇面上所设置的第一定位件与耦合窗定位连接；
耦合窗在与旋钮的外缘对应的位置处设置旋转定位面；旋钮能够通过旋转定位面的定位而围绕O轴旋转。
进一步地，开合法拉第组件外侧设置有线圈结构，包括中部线圈；中部线圈正投影在旋钮的内侧区域，且中部线圈的外径不大于最大打开内切圆的直径；
当各环扇片处于第一极限位置时，处于闭合状态的各环扇片的内圆弧面通过射频接入块与法拉第射频电源连接；
当各环扇片处于第二极限位置时，中部线圈完全暴露在耦合窗表面；中部线圈、边缘线圈均与线圈射频电源连接。
进一步地，所述线圈结构还包括相对于中部线圈独立设置的边缘线圈；边缘线圈能够正投影在旋钮的内侧区域；
当各环扇片处于第二极限位置时，中部线圈、边缘线圈均完全暴露在耦合窗表面；中部线圈、边缘线圈均与线圈射频电源连接。
进一步地，所述的第一定位件为第一销钉；耦合窗在与各环扇片上的第一销钉对应的位置处均设置有销孔；各环扇片通过各自扇面上所设置的第一销钉与耦合窗上的各销孔一一对应配合连接；
所述耦合窗沿中部位置处设置中部固定孔；中部固定孔配装有陶瓷进气嘴，该陶瓷进气嘴的出气部位配装喷嘴。
进一步地，还包括反应腔室；反应腔室的上端敞口设置；且反应腔室的敞口端密封连接有腔盖；腔盖的中部位置设置有与耦合窗匹配的窗口；
反应腔室内设置基座；所述基座顶部与偏置电极固定连接，偏置电极与喷嘴正对，且偏置电极顶面吸附有晶圆；
所述反应腔室顶部固定有屏蔽盒，所述屏蔽盒截面呈U形结构，所述屏蔽盒与腔盖之间密封连接；
射频接入块、升降机构均设置在屏蔽盒中；升降机构的一端与屏蔽盒的顶部固定，另一端则与射频接入块固定。
本发明的再一个发明目的是提供一种基于具有开合法拉第组件的等离子体处理系统的方法，包括两个工序，分别为耦合窗清洗工序和晶圆刻蚀工序，其中，
所述晶圆刻蚀工序的具体步骤为：
1.1)将晶圆放进反应腔室内偏置电极上方；
1.2)气缸上行，将射频接入块与法拉第层分离；
1.3)旋转旋钮，使得法拉第层打开，直至第二极限位置；此时，构成法拉第层的各环扇片的第一侧型面能够与最大打开内切圆相切，与最大打开内切圆正对的中部线圈直接与耦合窗正对；
1.4)通过陶瓷进气嘴向反应腔室通入工艺气体；给中部线圈通入满足需求的射频电源；
1.5)在晶圆表面作等离子刻蚀；
1.6)刻蚀工艺结束，停止向反应腔室通入工艺气体以及停止向中部线圈通电，并对反应腔室作抽真空处理；
所述的耦合窗清洗工序的具体步骤为：
2.1)将衬底片置于反应腔室内偏置电极上方；
2.2)旋转旋钮，使得法拉第层处于闭合状态，此时各环扇片的内圆弧面处于O轴外侧的同心圆a的圆周上，而各环扇片的外圆弧面则处于O轴外侧的同心圆b的圆周上；
2.3)气缸下行，将射频接入块压紧处于闭合状态的法拉第层的各环扇片紧靠着内圆弧面的部位，使得射频接入块与各环扇片导电连接；
2.4)通过陶瓷进气嘴向反应腔室通入清洗气体；
2.5)通过射频接入块给法拉第层通入满足需求的射频电源；
2.6)清洗完成，停止向反应腔室通入清洗气体以及停止向法拉第层通电，并对反应腔室作抽真空处理。
根据上述的技术方案，相对于现有技术，本发明具有如下的有益效果：
本发明所述开合法拉第组件，配装在等离子体处理系统的耦合窗外，清洗时，构成所述开合法拉第组件的各环扇片处于闭合状态，能够覆盖耦合窗正与等离子体接触的区域，此时各环扇片的内圆弧面处于同心圆a上，而各环扇片的外圆弧面则处于同心圆b上；而刻蚀时，构成所述开合法拉第组件的各环扇片处于打开状态，能够将位于开合法拉第组件上的中部线圈完全暴露，此时各环扇片的第一截面均能够与最大打开内切圆相切，最大打开内切圆的直径大于中部线圈的外径。由此可知，本发明所述的开合法拉第组件，可以有效地避免对晶圆刻蚀造成的不良影响，而对耦合窗清洗时，又能够利用法拉第层来实现耦合窗的彻底清洗。即本发明有利于解决传统的法拉第屏蔽单元导致的射频电场强度降低的问题，有利于对耦合窗进行清洁，也不会影响射频电场的强度，方便进行操作。
附图说明
图1公开了一种具有开合法拉第组件的等离子体处理系统；
图2是图1中耦合窗的结构示意图；
图3是图1中开合法拉第组件处于闭合状态时的一种结构示意图；
图4是图3中开合法拉第组件处于打开状态时的结构示意图；
[根据细则91更正 09.04.2020]　
图5是图3中扇形片的结构示意图；

图6是本发明所述基于具有开合法拉第组件的等离子体处理系统的方法的流程图
1、反应腔室；2、支撑臂；3、基座；4、偏置电极；5、晶圆，6、腔盖；7、耦合窗；7-1、耦合窗的中部固定孔；8、旋转定位面；9、进气喷嘴；10、旋钮；11、导向滑槽；12、第一销钉；13、第二销钉；14、开合法拉第组件；14-1、环扇片；14-1a、环扇片的第一侧型面；14-1b、环扇片的内圆弧面；14-1c、环扇片的第二侧型面；14-1d、环扇片的外圆弧面；15、销孔；16、陶瓷进气嘴；17、 立体式线圈；18、屏蔽盒；19、气缸；20、气缸转接板；21、气缸转接绝缘杆；22、射频接入块；23、切换盒；24、功率分配盒。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、表达式和数值不限制本发明的范围。同时，应当明白，为了便于描述，附图中所示出的各个部分的尺寸并不是按照实际的比例关系绘制的。对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为授权说明书的一部分。在这里示出和讨论的所有示例中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它示例可以具有不同的值。
为了便于描述，在这里可以使用空间相对术语，如“在……之上”、“在……上方”、“在……上表面”、“上面的”等，用来描述如在图中所示的一个器件或特征与其他器件或特征的空间位置关系。应当理解的是，空间相对术语旨在包含除了器件在图中所描述的方位之外的在使用或操作中的不同方位。例如，如果附图中的器件被倒置，则描述为“在其他器件或构造上方”或“在其他器件或构造之上”的器件之后将被定位为“在其他器件或构造下方”或“在其他器件或构造之下”。因而，示例性术语“在……上方”可以包括“在……上方”和“在……下方”两种方位。该器件也可以其他不同方式定位(旋转90度或处于其他方位)。
本发明公开了一种开合法拉第组件14，包括法拉第层，如图1-5所示，所述的法拉第层包括旋钮10、射频接入块22、驱动射频接入块22移动的升降机构、若干均布在O轴外侧并呈分体设置的环扇片14-1；扇形片材料优选为铜或铝，其中：所述的旋钮10，整体呈圆环状，可旋转地同心设置在O轴外侧，并沿着旋钮10的环面等距设置有数量与环扇片14-1数量匹配的导向滑槽11；附图中，导向滑槽11在旋钮10的环面围绕o轴呈中心对称均匀分布，其中心线与法拉第 层打开的最大打开内切圆相切。旋钮10的材料优选为绝缘材料ULTEM-1000,旋钮10的旋转中心为耦合窗7的中心轴o轴，其旋转定位面8为耦合窗7边缘所设置的旋转定位面8，旋钮10的动力来源可以使手动，也可以是外加电极驱动或者外加旋转气缸19驱动，本发明不做描述
每一块环扇片14-1均包括内圆弧面14-1b、外圆弧面14-1d以及将内圆弧面14-1b、外圆弧面14-1d的同侧分别连接的第一侧型面14-1a、第二侧型面14-1c；为构成不同形状的法拉第层，可以采用不同形状的环扇片14-1，即本发明所述第一、第二侧型面14-1c可以如附图5所示的形状，即第一侧型面14-1a为外凸弧形型面、而第二侧型面14-1c则为内凹弧形型面，也可以均为平直型面。同时，每一块环扇片14-1均在靠近外圆弧面14-1d的扇面上分别设置有两根定位件；所述的两根定位件分别为第一、第二定位件；所述的第一、第二定位件均为销钉，则第一、第二定位件对应为第一、第二销钉12和13。
各环扇片14-1均在旋钮10的带动下能够同步围绕各自扇面上所设置的第一定位件旋转，并通过第二定位件与旋钮10上的导向滑槽11的导向连接而限制旋转幅度在第一极限位置、第二极限位置之间；本发明中，所述的导向滑槽11为条形槽，且所述条形槽倾斜设置。
当各环扇片14-1处于第一极限位置时，法拉第层处于闭合状态，此时各环扇片14-1的内圆弧面14-1b处于O轴外侧的同心圆a的圆周上并等距布置，而各环扇片14-1的外圆弧面14-1d则处于O轴外侧的同心圆b的圆周上并等距布置，且同心圆a的内径小于同心圆b的内径；
当各环扇片14-1处于第二极限位置时，法拉第层处于打开状态，此时各环扇片14-1的第一侧型面14-1a能够与最大打开内切圆相切，旋钮10内侧与最大打开内切圆对应的区域完全暴露；
射频接入块22与升降机构的动力输出端连接；本发明中，所述的升降机构包括气缸19、气缸转接板20以及气缸转接绝缘杆21；气缸的动力输出端依次通过气缸转接板20、气缸转接绝缘杆21与射频接入块22固定。
在升降机构的动力驱动下，射频接入块22能够朝向法拉第层移动，以与处于闭合状态的法拉第层的各环扇片14-1的内圆弧面14-1b导电连接，或者背离法拉第层移动，以与处于打开状态的法拉第层分离。
将上述的开合法拉第组件14应用于等离子体处理系统，则所得的具有开合法拉第组件14的等离子体处理系统，包括耦合窗7，本发明中，耦合窗7的材质一般为陶瓷，位于反应腔室1和腔盖6的正上方，中部通过所设置的中部固定孔安装有进气喷嘴9，该陶瓷进气嘴16的出气部位配装喷嘴，为腔室中的工艺过程提供工艺气体/清洗气体，反应腔室1内有偏置电极4及位于偏置电极4正上方的晶圆5；耦合窗7上方安装有线圈结构，该线圈为立体式线圈17，立体式线圈17包括中心线圈和边缘线圈两个相互独立的部分，中心线圈和边缘线圈均为两个单立体线圈耦合而成，每个单立体线圈高度上2层、3层甚至是更多层，在平面上为2圈、3圈甚至是更多圈，两个单立体线圈的一端连接到一起与外部射频装置相连，另外一端也连接到一起接地；上述的开合法拉第组件14位于耦合窗7与立体式线圈17的中间层。此时，各环扇片14-1均通过各自扇面上所设置的第一定位件与耦合窗7定位连接；耦合窗7在与旋钮10的外缘对应的位置处设置旋转定位面8；旋钮10能够通过旋转定位面8的定位而围绕O轴旋转。立体式线圈17正投影在旋钮10的内侧区域，且立体式线圈17的外径不大于最大打开内切圆的直径；即：中部线圈、边缘线圈均能够正投影在旋钮10的外侧区域，且边缘线圈的外径不大于最大打开内切圆的直径。
当各环扇片14-1处于第一极限位置时，处于闭合状态的各环扇片14-1的内圆弧面14-1b通过射频接入块22与法拉第射频电源连接；
当各环扇片14-1处于第二极限位置时，立体式线圈17完全暴露在耦合窗7表面；中部线圈、边缘线圈均与线圈射频电源连接。
所述的第一定位件为第一销钉12；耦合窗7在与各环扇片14-1上的第一销钉12对应的位置处均设置有销孔15；各环扇片14-1通过各自扇面上所设置的第一销钉12与耦合窗7上的各销孔15一一对应配合连接；
进一步地，还包括反应腔室1；反应腔室1的上端敞口设置；且反应腔室1的敞口端密封连接有腔盖6；腔盖6的中部位置设置有与耦合窗7匹配的窗口；
反应腔室1内设置基座3；所述基座3顶部与偏置电极4固定连接，偏置电极4与喷嘴正对，且偏置电极4顶面吸附有晶圆5；
耦合窗7上部的开合法拉第组件14与中部线圈之间采用绝缘件绝缘，整个上射频屏蔽由屏蔽盒18屏蔽，同时开合法拉第组件14射频接入的射频接入块 22、升降机构也分别固定于屏蔽盒18之内，升降机构的一端与屏蔽盒18的顶部固定，另一端则与射频接入块22固定。升降机构包括气缸、气缸转接板20、气缸转接绝缘杆21，气缸转接板20材料优选316L不锈钢，气缸转接绝缘杆21材料优选ULTEM-1000,其提供气缸转接板20与射频接入块22之间的绝缘支撑的同时为中部陶瓷进气留有足够空间，射频接入块22材料优选为铜或铝，射频接入块22与射频相连接。
[根据细则91更正 09.04.2020]　
本发明的再一个发明目的是提供一种基于具有开合法拉第组件14的等离子体处理系统的方法，如图6所示， 包括两个工序，分别为耦合窗7清洗工序和晶圆5刻蚀工序，其中，
所述晶圆5刻蚀工序的具体步骤为：
1.1)将晶圆5放进反应腔室1内偏置电极4上方；
1.2)气缸上行，将射频接入块22与法拉第层分离；
1.3)旋转旋钮10，使得法拉第层打开，直至第二极限位置；此时，构成法拉第层的各环扇片14-1的第一侧型面14-1a能够与最大打开内切圆相切，与最大打开内切圆正对的中部线圈直接与耦合窗7正对；
1.4)通过陶瓷进气嘴16向反应腔室1通入工艺气体；给中部线圈通入满足需求的射频电源；
1.5)在晶圆5表面作等离子刻蚀；
1.6)刻蚀工艺结束，停止向反应腔室1通入工艺气体以及停止向中部线圈通电，并对反应腔室1作抽真空处理；
晶圆5刻蚀工序结束时，法拉第层处于打开状态。
晶圆5刻蚀工序后，需要进行耦合窗7清洗工序时，所述的耦合窗7清洗工序的具体步骤为：
2.1)将衬底片置于反应腔室1内偏置电极4上方；
2.2)旋钮10通过耦合窗7上的旋转定位面8的定位，围绕O轴顺时针旋转，旋钮10上的导向滑槽11带动环扇片14-1的第二销钉13旋转，第二销钉13控制着环扇片14-1围绕第一销钉12旋转，第一销钉12与耦合窗7上的销孔15配合转动，最终实现法拉第层处于闭合状态，此时各环扇片14-1的内圆弧面 14-1b处于O轴外侧的同心圆a的圆周上，而各环扇片14-1的外圆弧面14-1d则处于O轴外侧的同心圆b的圆周上；
2.3)气缸下行，通过气缸转接板20和气缸转接绝缘杆21带动着射频接入块22下行，并最终使得射频接入块22压紧每个环扇片14-1，即可将射频接入块22压紧处于闭合状态的法拉第层的各环扇片14-1紧靠着内圆弧面14-1b的部位，使得射频接入块22与各环扇片14-1导电连接；
2.4)通过陶瓷进气嘴16向反应腔室1通入清洗气体；
2.5)通过射频接入块22给法拉第层通入满足需求的射频电源；
2.6)清洗一段时间后，当相邻两环扇片14-1之间存在间隙时，需要推动法拉第层旋转，旋转角度至少能够使得旋转后的环扇片14-1能够覆盖旋转前相邻两片环扇片14-1之间的狭缝，然后维持这一状态继续进行清洗一段时间，通过这一步骤，可以较好地完成耦合窗7清洗；反之，当相邻两环扇片14-1之间无间隙，完全覆盖耦合窗7与等离子体接触的区域，则无需推动法拉第层旋转。
2.7)清洗完成，停止向反应腔室1通入清洗气体以及停止向法拉第层通电，并对反应腔室1作抽真空处理。
当清洗工艺结束时，气缸上行，通过气缸转接板20和气缸转接绝缘杆21带动着射频接入块22上行，射频接入块22与每个环扇片14-1分离，旋钮10通过耦合窗7上的旋转定位面8的定位围绕O轴逆时针旋转，旋钮10上的导向滑槽11带动环扇片14-1的第二销钉13旋转，第二销钉13控制着环扇片14-1围绕第一销钉12旋转，第一销钉12与耦合窗7的销孔15的配合转动，最终实现法拉第层处于打开状态，对中部线圈没有任何遮挡，即中部线圈完全暴露至耦合窗7，可以开始刻蚀工艺。
本发明所述的开合法拉第组件14可以全覆盖，或者部分覆盖耦合窗7与等离子体接触的区域，保证了清洗的全覆盖，通过控制法拉第层的开、合分别配合刻蚀和清洗工艺，实现了腔室尤其是耦合窗7的彻底清洗，同时开合法拉第层在打开状态时，对激励射频线圈没有任何遮挡，即开合法拉第层的存在不会对线圈的激励有任何影响，不会削弱线圈耦合的电场强度，从而不会对刻蚀工艺有任何影响。

Claims (12)

  1. 一种开合法拉第组件，包括法拉第层，其特征在于，所述的法拉第层包括旋钮、射频接入块、驱动射频接入块移动的升降机构、若干均布在O轴外侧并呈分体设置的环扇片；其中：
    所述的旋钮，整体呈圆环状，可旋转地同心设置在O轴外侧，并沿着旋钮的环面等距设置有数量与环扇片数量匹配的导向滑槽；
    每一块环扇片均包括内圆弧面、外圆弧面以及将内圆弧面、外圆弧面的同侧分别连接的第一侧型面、第二侧型面；同时，每一块环扇片均在靠近外圆弧面的扇面上分别设置有两根定位件；所述的两根定位件分别为第一、第二定位件；
    各环扇片均在旋钮的带动下能够同步围绕各自扇面上所设置的第一定位件旋转，并通过第二定位件与旋钮上的导向滑槽的导向连接而限制旋转幅度在第一极限位置、第二极限位置之间；
    当各环扇片处于第一极限位置时，法拉第层处于闭合状态，此时各环扇片的内圆弧面处于O轴外侧的同心圆a的圆周上并等距布置，而各环扇片的外圆弧面则处于O轴外侧的同心圆b的圆周上并等距布置，且同心圆a的内径小于同心圆b的内径；
    当各环扇片处于第二极限位置时，法拉第层处于打开状态，此时各环扇片的第一侧型面能够与最大打开内切圆相切，旋钮内侧与最大打开内切圆对应的区域完全暴露；
    射频接入块与升降机构的动力输出端连接；
    在升降机构的动力驱动下，射频接入块能够朝向法拉第层移动，以与处于闭合状态的法拉第层的各环扇片的内圆弧面导电连接，或者背离法拉第层移动，以与处于打开状态的法拉第层分离。
  2. 根据权利要求1所述的开合法拉第组件，其特征在于，所述的导向滑槽为条形槽。
  3. 根据权利要求2所述的开合法拉第组件，其特征在于，所述条形槽倾斜设置。
  4. 根据权利要求1所述的开合法拉第组件，其特征在于，所述第一、第二侧型面均为平直型面；或者所述第一侧型面为外凸弧形型面、而第二侧型面则为内凹弧形型面。
  5. 根据权利要求1所述的开合法拉第组件，其特征在于，所述的升降机构包括气缸、气缸转接板以及气缸转接绝缘杆；气缸的动力输出端依次通过气缸转接板、气缸转接绝缘杆与射频接入块固定。
  6. 根据权利要求1所述的开合法拉第组件，其特征在于，所述的第一、第二定位件均为销钉。
  7. 一种具有开合法拉第组件的等离子体处理系统，包括耦合窗，其特征在于，耦合窗外侧设置有如权利要求1所述的开合法拉第组件；
    各环扇片均通过各自扇面上所设置的第一定位件与耦合窗定位连接；
    耦合窗在与旋钮的外缘对应的位置处设置旋转定位面；旋钮能够通过旋转定位面的定位而围绕O轴旋转。
  8. 根据权利要求7所述的具有开合法拉第组件的等离子体处理系统，其特征在于，开合法拉第组件外侧设置有线圈结构，包括中部线圈；中部线圈正投影在旋钮的内侧区域，且中部线圈的外径不大于最大打开内切圆的直径；
    当各环扇片处于第一极限位置时，处于闭合状态的各环扇片的内圆弧面通过射频接入块与法拉第射频电源连接；
    当各环扇片处于第二极限位置时，中部线圈完全暴露在耦合窗表面；中部线圈、边缘线圈均与线圈射频电源连接。
  9. 根据权利要求8所述的具有开合法拉第组件的等离子体处理系统，其特征在于，所述线圈结构还包括相对于中部线圈独立设置的边缘线圈；边缘线圈能够正投影在旋钮的内侧区域；
    当各环扇片处于第二极限位置时，中部线圈、边缘线圈均完全暴露在耦合窗表面；中部线圈、边缘线圈均与线圈射频电源连接。
  10. 根据权利要求7所述的具有开合法拉第组件的等离子体处理系统，其特征在于，所述的第一定位件为第一销钉；耦合窗在与各环扇片上的第一销钉对应的位置处均设置有销孔；各环扇片通过各自扇面上所设置的第一销钉与耦合窗上的各销孔一一对应配合连接；
    所述耦合窗沿中部位置处设置中部固定孔；中部固定孔配装有陶瓷进气嘴，该陶瓷进气嘴的出气部位配装喷嘴。
  11. 根据权利要求7所述的具有开合法拉第组件的等离子体处理系统，其特征在于，还包括反应腔室；反应腔室的上端敞口设置；且反应腔室的敞口端密封连接有腔盖；腔盖的中部位置设置有与耦合窗匹配的窗口；
    反应腔室内设置基座；所述基座顶部与偏置电极固定连接，偏置电极与喷嘴正对，且偏置电极顶面吸附有晶圆；
    所述反应腔室顶部固定有屏蔽盒，所述屏蔽盒截面呈U形结构，所述屏蔽盒与腔盖之间密封连接；
    射频接入块、升降机构均设置在屏蔽盒中；升降机构的一端与屏蔽盒的顶部固定，另一端则与射频接入块固定。
  12. 一种基于具有开合法拉第组件的等离子体处理系统的方法，其特征在于，包括两个工序，分别为耦合窗清洗工序和晶圆刻蚀工序，其中，
    所述晶圆刻蚀工序的具体步骤为：
    1.1)将晶圆放进反应腔室内偏置电极上方；
    1.2)气缸上行，将射频接入块与法拉第层分离；
    1.3)旋转旋钮，使得法拉第层打开，直至第二极限位置；此时，构成法拉第层的各环扇片的第一侧型面能够与最大打开内切圆相切，与最大打开内切圆正对的中部线圈直接与耦合窗正对；
    1.4)通过陶瓷进气嘴向反应腔室通入工艺气体；给中部线圈通入满足需求的射频电源；
    1.5)在晶圆表面作等离子刻蚀；
    1.6)刻蚀工艺结束，停止向反应腔室通入工艺气体以及停止向中部线圈通电，并对反应腔室作抽真空处理；
    所述的耦合窗清洗工序的具体步骤为：
    2.1)将衬底片置于反应腔室内偏置电极上方；
    2.2)旋转旋钮，使得法拉第层处于闭合状态，此时各环扇片的内圆弧面处于O轴外侧的同心圆a的圆周上，而各环扇片的外圆弧面则处于O轴外侧的同心圆b的圆周上；
    2.3)气缸下行，将射频接入块压紧处于闭合状态的法拉第层的各环扇片紧靠着内圆弧面的部位，使得射频接入块与各环扇片导电连接；
    2.4)通过陶瓷进气嘴向反应腔室通入清洗气体；
    2.5)通过射频接入块给法拉第层通入满足需求的射频电源；
    2.6)清洗完成，停止向反应腔室通入清洗气体以及停止向法拉第层通电，并对反应腔室作抽真空处理。
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