WO2021136432A1 - Shielding assembly, vehicle-mounted device and communication device - Google Patents

Shielding assembly, vehicle-mounted device and communication device Download PDF

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Publication number
WO2021136432A1
WO2021136432A1 PCT/CN2020/141646 CN2020141646W WO2021136432A1 WO 2021136432 A1 WO2021136432 A1 WO 2021136432A1 CN 2020141646 W CN2020141646 W CN 2020141646W WO 2021136432 A1 WO2021136432 A1 WO 2021136432A1
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WO
WIPO (PCT)
Prior art keywords
absorbing
wave
adhesive layer
shielding
conductive adhesive
Prior art date
Application number
PCT/CN2020/141646
Other languages
French (fr)
Chinese (zh)
Inventor
彭小权
彭杰
周琴
伍磊
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华为技术有限公司
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Publication date
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Publication of WO2021136432A1 publication Critical patent/WO2021136432A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00Adapting or protecting infrastructure or their operation

Definitions

  • This application relates to the field of communication technology, and in particular to a shielding component, a vehicle-mounted device, and a communication device.
  • the antenna is driven by a radio frequency chip.
  • the integration of radio frequency chips of vehicle-mounted millimeter wave radars is getting higher and higher.
  • Some types of transmitting antennas and receiving antennas are driven by a single radio frequency chip, and some types of transmitting antennas and receiving antennas are driven by different radio frequency chips that are relatively close.
  • the radio frequency chip In order to prevent the radio frequency chip from being interfered by the external millimeter wave, it is necessary to isolate the radio frequency chip from the external millimeter wave radio frequency signal; in order to prevent the crosstalk between the transceiver of the radio frequency chip, it is necessary to isolate the radio frequency chip transmitting pin and the receiving pin (including the extension circuit) Millimeter wave radio frequency signal.
  • the radio frequency chip cannot be shielded well in the prior art.
  • the present application provides a shielding component, a vehicle-mounted device, and a communication device to improve the heat dissipation and shielding effect of the shielding component on the chip.
  • a shielding assembly which is applied to protect the chip.
  • the shielding assembly specifically includes: a wave-absorbing shielding structure and an insulating and thermally conductive adhesive layer; wherein the wave-absorbing shielding structure is a shell structure, so The insulating and thermally conductive adhesive layer is filled in the housing structure; it also includes an anti-adhesion layer that wraps the insulating and thermally conductive adhesive layer, the anti-adhesion layer is an elastic layer; wherein, the insulating and thermally conductive adhesive layer is used for A coverage area covering the peripheral area of the chip; wherein some areas are reserved in the coverage area for coating a conductive adhesive layer, and the conductive adhesive layer is used to isolate a plurality of communication wires connected to the chip.
  • the peripheral area of the chip includes the chip and the communication wires connected to the chip.
  • the covering area covers the chip, the insulating and thermally conductive adhesive layer extrudes a groove to accommodate the chip, and the corresponding covering area extrudes a groove for accommodating communication wires.
  • the chip is in contact with the insulating and thermally conductive adhesive layer through the anti-adhesive layer, and the heat generated by the chip is transferred through the insulating and thermally conductive adhesive layer for heat dissipation.
  • the wave-absorbing shielding structure surrounds the containing groove and is used to shield the chip.
  • the conductive adhesive layer is used to isolate a plurality of communication wires connected to the chip. That is, the communication wires connected to the receiving pins and the transmitting pins of the chip are separated by a conductive adhesive layer, so as to avoid crosstalk between the communication wires.
  • the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves.
  • the adjacent transmitting pins and the communication wires connected to the receiving pins are electromagnetically separated by the conductive adhesive layer to reduce the communication wires. The crosstalk between the two improves the working effect of the chip.
  • the conductive adhesive layer electromagnetically isolates the chip and the communication wire covered by the insulating and thermally conductive adhesive layer from the outside of the shielding assembly, thereby improving the working environment of the chip, thereby improving the working effect of the chip.
  • the chip is a radio frequency chip
  • the communication wire includes a bus connected to the radio frequency chip, and at least two branch lines connected to the bus, each branch line is connected with an antenna
  • the covered area of the insulating and thermally conductive adhesive covers the radio frequency chip, and the insulating and thermally conductive adhesive layer extrudes a receiving groove corresponding to the radio frequency chip; the covered area of the insulating and thermally conductive adhesive covers the bus and the At least two branch lines, and the insulating and thermally conductive adhesive layer extrudes a wire groove corresponding to the bus and the at least two branch lines.
  • the crosstalk between the communication wires connected to the chip is reduced, and the working effect of the chip is improved.
  • the housing structure is provided with an escape groove for avoiding the communication wire. It is convenient for communication wires to pass through the wave-absorbing shielding structure.
  • the wave-absorbing shielding structure is provided with a plurality of reflecting surfaces for reflecting electromagnetic waves on the side facing the containing groove; or,
  • a plurality of wave-absorbing surfaces for absorbing electromagnetic waves are provided on one side of the wave-absorbing shielding structure close to the setting surface of the containing groove;
  • a plurality of reflecting surfaces for reflecting electromagnetic waves and a plurality of absorbing surfaces for absorbing electromagnetic waves are provided on the side of the wave-absorbing shielding structure close to the installation surface of the containing groove.
  • the wave-absorbing shielding structure adopts the method of reflecting or absorbing electromagnetic waves to realize the isolation between the chip and the millimeter wave radio frequency signal.
  • the wave-absorbing shielding structure is provided with a plurality of raised structures at intervals, and the wave-absorbing surfaces are arranged on the raised structures in a one-to-one correspondence; or,
  • the reflecting surfaces are arranged on the protruding structure in a one-to-one correspondence; or,
  • the wave absorbing surface is arranged on a part of the convex structure, and the reflecting surface is arranged on another part of the convex structure.
  • the above-mentioned wave absorbing surface and reflecting surface are carried by the convex structure.
  • the plurality of protrusions are spirally arranged on the side of the wave-absorbing shielding structure facing the receiving groove. Improve the shielding effect.
  • the wave absorbing and shielding structure is a wave absorbing and shielding structure made of a wave absorbing resin. Has a good absorbing effect.
  • the conductive adhesive layer is disposed around at least a part of the insulating and thermally conductive adhesive layer.
  • the conductive adhesive layer surrounds part of the insulating and thermal conductive adhesive layer to achieve electromagnetic isolation between the chip and the connected communication wire and the shielding assembly.
  • the shielding assembly further includes a heat sink; the heat sink is arranged on a side of the wave-absorbing shielding structure facing away from the receiving groove.
  • the chip is shielded by the heat sink.
  • the heat dissipating device is thermally connected to the wave-absorbing shielding structure. And the heat dissipation of the chip.
  • the heat sink element is provided with a plurality of heat dissipation protrusions; or, the heat sink element is rib-shaped or wave-shaped. Improve the heat dissipation surface of the radiator, thereby improving the heat dissipation effect.
  • the heat sink is embedded in the wave-absorbing shielding structure. Ensure the thermal contact effect between the radiator and the insulating and thermal conductive adhesive layer.
  • the distance between the heat sink device and the edge of the wave-absorbing shielding structure is not less than 0.8 mm. Ensure that the heat sink can be reliably fixed in the insulating and thermally conductive adhesive layer.
  • the anti-adhesion layer is a highly elastic film layer.
  • the anti-adhesion layer is an anti-adhesion layer having a three-fold stretch and a six-fold stretch.
  • the anti-adhesion layer is an organic silicon thin film layer. Has a good isolation effect.
  • a communication device in a second aspect, includes a substrate, a chip disposed on the substrate, and the shielding assembly according to any one of the above; wherein the shielding assembly is adhesively connected to the substrate , And the chip is located in the containing groove; the chip is thermally connected to the insulating and thermally conductive adhesive layer.
  • the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves.
  • the conductive adhesive layer electromagnetically isolates the adjacent transmitting pins and the wires connected to the receiving pins, reducing the distance between the wires. The crosstalk improves the working effect of the chip.
  • an in-vehicle device in a third aspect, includes a substrate, a chip provided on the substrate, and the shielding assembly according to any one of the above; wherein the shielding assembly is adhesively connected to the substrate , And the chip is located in the containing groove; the chip is thermally connected to the insulating and thermally conductive adhesive layer.
  • the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves.
  • the conductive adhesive layer electromagnetically isolates the adjacent transmitting pins and the wires connected to the receiving pins, reducing the distance between the wires. The crosstalk improves the working effect of the chip.
  • FIG. 1 is a structural block diagram of a radio frequency chip provided by an embodiment of the application
  • Figure 2 is a schematic diagram provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of the structure of the inner wave-absorbing shielding component in the shielding component provided by the embodiment of the application;
  • FIG. 4 is a schematic cross-sectional view of a wave absorbing and shielding structure provided by an embodiment of the application.
  • FIG. 5 is a schematic structural diagram of the insulating and thermally conductive adhesive layer provided by the embodiment of the application after being taken out from the thin shielding structure;
  • FIG. 6 is an exploded schematic diagram of another shielding component provided by an embodiment of the application.
  • FIG. 7 is an exploded schematic diagram of another shielding component provided by an embodiment of the application.
  • FIG. 8 is an exploded schematic diagram of another shielding component provided by an embodiment of the application.
  • FIG. 9 is a schematic diagram of the internal structure of a communication device provided by an embodiment of the application.
  • the shielding components provided in the embodiments of this application are used for high-frequency (such as ICT wireless products) and ultra-high-frequency (such as vehicle millimeter wave radar) products. , Used to shield the radio frequency chip.
  • high-frequency such as ICT wireless products
  • ultra-high-frequency such as vehicle millimeter wave radar
  • the radio frequency chip 100 is assembled to In a high-frequency product or an ultra-high frequency product, the receiving pin of the radio frequency chip 100 is connected to the receiving antenna 202 through a communication wire 201, wherein the communication wire 201 includes a bus 201a connected to the radio frequency chip 100, and two buses connected to the bus 201a. There are two branch lines 201b, and each branch line 201b is connected to one receiving antenna 202. Of course, the number of branch lines 201b can also be set to three or four. In the two radio frequency chips 100 shown in FIG. 1, the upper radio frequency chip 100 (taking the placement position of the radio frequency chip 100 in FIG.
  • the radio frequency chip 100 located below is connected to five groups of receiving antennas 202 through communication wires 201, and each group of receiving antennas 202 includes two antennas.
  • the radio frequency chip 100 located below is also connected to a transmitting antenna 203 through a communication wire 201.
  • the transmitting antenna 203 is a group, and the group of transmitting antennas 203 includes two antennas.
  • the communication antenna system of the entire product is formed by the above-mentioned transmitting antenna 203 and receiving antenna 202.
  • the embodiment of the present application provides a shielding component to improve the working environment of the radio frequency chip 100 and improve the working effect of the radio frequency chip 100.
  • the chip in the following in this application refers to a radio frequency chip.
  • the shielding component shields one radio frequency chip as an example.
  • the shielding component provided in the embodiment of this application can also shield two or three different radio frequency chips, and its structure is similar to that of the shielding component.
  • the structure of shielding a radio frequency chip is similar, except that the size change is not visible. Therefore, the following describes an example of shielding a radio frequency chip by a shielding component with reference to the accompanying drawings.
  • FIG. 2 illustrates a schematic structural diagram of a shielding assembly provided by an embodiment of the present application.
  • the shielding assembly shown in FIG. 2 includes a wave-absorbing shielding structure 30 and an insulating and thermally conductive adhesive layer 10.
  • the wave-absorbing and shielding structure 30 is a shell structure, in which is a cavity for accommodating the insulating and thermally conductive adhesive layer 10.
  • the insulating and thermally conductive adhesive layer 10 has a first surface.
  • the first surface in FIG. 2 is a rectangular surface with four The two opposite sides are named the first side, the second side, the third side, and the fourth side for the aspect description.
  • the first surface has a covering area for covering the peripheral area of the chip (the area shown by the dashed frame a in FIG.
  • the covering area may also be the first surface of the insulating and thermally conductive adhesive layer 10.
  • the chip peripheral area is the area containing the chip and the communication wires connected to the chip.
  • the coverage area a will also cover them.
  • the covered area of the insulating and thermally conductive adhesive layer 10 covers the chip, the insulating and thermally conductive adhesive layer 10 is extruded out of the receiving groove 11 corresponding to the chip.
  • the shape of the receiving groove 11 is illustrated in FIG. 2, and the receiving groove 11 is located on the first surface. A middle position or a position close to the middle. In FIG.
  • the containing groove 11 is a rectangular parallelepiped containing groove, but the shape of the containing groove 11 is not limited in the embodiment of the present application.
  • the shape of the containing groove 11 can be determined according to the shape of the chip, for example, the chip is circular or elliptical. Or other shapes, the containing groove 11 is correspondingly set to a shape matching the chip, or other shapes that ensure that the chip can be placed in the containing groove 11.
  • an anti-adhesion layer (not shown in the figure) is wrapped around the insulating and thermally conductive adhesive layer 10 to prevent the insulating and thermally conductive adhesive layer 10 from adhering to the substrate and facilitate the disassembly of the shielding components.
  • the anti-adhesive layer is an elastic layer to ensure that the anti-adhesive layer can be more deformed with the insulating and thermally conductive adhesive layer 10 to form the receiving groove 11 described in Figure 2.
  • a highly elastic elastic layer is used for the adhesive layer
  • the bonding layer has twice the stretching amount, three times the stretching amount, or six times the stretching amount, so that the bonding layer has enough deformation to match the device in the peripheral area of the chip.
  • the adhesive layer can be made of different materials, for example, the adhesive layer is a silicone film layer, specifically it can be a dimethylsiloxane (PDMS) breathable film, the thickness of the breathable film is not greater than 0.05mm, such as the thickness It is 0.02mm, 0.03mm, 0.04mm, 0.05mm.
  • PDMS dimethylsiloxane
  • the heat generated when the chip is working is transferred to the radiator through the heat dissipation path.
  • the heat dissipation path of the chip includes but is not limited to the substrate, the housing, and the pins.
  • the intermediate path includes but is not limited to the direct contact between the heat sink and the chip or the filling of thermally conductive material.
  • the end path is the heat sink body.
  • the insulating and thermally conductive adhesive layer 10 provided by the embodiment of the present application is used as an intermediate path for dissipating heat to the chip.
  • the thermal conductivity of the insulating and thermally conductive adhesive layer 10 is not less than 1.5w/mk, such as different thermal conductivity such as 1.5w/mk, 1.8w/mk, 2.0w/mk, 2.5w/mk, 3w/mk, etc. rate.
  • the resistivity of the insulating and thermal conductive adhesive is not less than 1000v/mm, such as the resistivity of 1000v/mm, 1200v/mm, 1500v/mm, 1800v/mm, 2000v/mm and other different resistivities.
  • the material of the insulating and thermally conductive adhesive layer 10 can be thermally conductive silicone grease that changes phase with temperature, but the phase transition temperature of the thermally conductive silicone grease from liquid to solid is not less than 45°C.
  • the insulating and thermally conductive adhesive layer 10 when the coverage area of the insulating and thermally conductive adhesive layer 10 covers the bus and at least two branch lines (refer to the corresponding description in FIG. 1), the insulating and thermally conductive adhesive layer is extruded to correspond to the bus and the at least two branch lines. Wire trough.
  • the receiving slot 11 is connected to a wire slot, and the wire slot is used to accommodate communication wires connected to pins connected to the chip, such as communication wires connected to receiving pins, transmitting pins, or pins with other functions.
  • the shielding component provided in the embodiment of the present application does not specifically limit the number of wire slots.
  • the specific number of wire slots can correspond to the pins connected to the chip, for example, the number of pins connected to the chip is two, four, or five. When the number is different, the number of corresponding wire guides is also the corresponding number of two, four, five, etc.
  • the three wire grooves are named as the first wire groove 12 b, the second wire groove 12 a, and the third wire groove 12 c for the description.
  • the first wire groove 12b, the second wire groove 12a, and the third wire groove 12c are located on the same side of the receiving groove 11 and extend to the first side.
  • the first wire groove 12b is located in the middle of the three wire grooves, and the second wire groove 12a and the third wire groove 12c are arranged on both sides of the first wire groove 12b.
  • the first wire groove 12b is a straight wire groove
  • the second wire groove 12a and the third wire groove 12c are arc-shaped wire grooves
  • the second wire groove 12a and the second wire groove 12a are connected to the avoidance groove 33 (set in the housing structure).
  • the upper part of the structure used to avoid the communication wire) is far away from the first wire groove 12b, thereby increasing the separation distance between the first wire groove 12b and the second wire groove 12a and the third wire groove 12c, and reduces the three wires Crosstalk between the communication wires connected to the pins contained in the slot.
  • the arrangement of the wire grooves in the embodiment of the present application is not limited to the way shown in FIG.
  • the wire grooves are located on different side walls of the receiving groove 11, Or the wire grooves extend to different sides of the insulating and thermally conductive adhesive layer 10 to improve the separation distance between the wire grooves.
  • the conductive adhesive layer can be adhered to the shielding component when the shielding component is connected to the substrate. As shown in FIG. 2, the conductive adhesive layer is arranged on the side of the insulating and thermally conductive adhesive layer 10 where the receiving groove 11 is arranged, and is arranged at intervals from the wire groove.
  • first conductive adhesive layer 20d is a T-shaped conductive adhesive layer, and the vertical portion of the first conductive adhesive layer 20d is along the first conductive adhesive layer 20d.
  • the horizontal part of the first conductive adhesive layer 20d extends toward the receiving groove 11; the second conductive adhesive layer 20c is an L-shaped conductive adhesive layer, and the horizontal part of the second conductive adhesive layer 20c is arranged along the first side.
  • the vertical portion of the second conductive adhesive layer 20c is located on one side of the first conductive adhesive layer 12b and extends along the length of the first conductive adhesive layer 12b, and the second conductive adhesive layer 12a is located around the first conductive adhesive layer 20d and the second conductive adhesive layer 20c.
  • a second conductive adhesive layer 20c and a third conductive adhesive layer 20b are respectively provided on both sides of the first wire groove 12b.
  • the third conductive adhesive layer 20b and the second conductive adhesive layer 20c are symmetrically arranged along the axis of the first wire groove 12b.
  • the vertical portion of the conductive adhesive layer 20b is located on one side of the first wire groove 12b and extends along the length of the first wire groove 12b, and the horizontal portion of the third conductive adhesive layer 20b is arranged along the first side; the first wire groove 12b It is located in the space enclosed by the vertical portions of the second conductive adhesive layer 20c and the third conductive adhesive layer 20b.
  • a third conductive adhesive layer 20b and a fourth conductive adhesive layer 20a are respectively provided on both sides of the third wire groove 12c, and the fourth conductive adhesive layer 20a and the first conductive adhesive layer 20d are symmetrically arranged along the axis of the first wire groove 12b.
  • the horizontal portion of the fourth conductive adhesive layer 20a is arranged along the third side of the first surface, the vertical portion of the fourth conductive adhesive layer 20a extends toward the receiving groove 11, and the third wire groove 12c is located between the third conductive adhesive layer 20b and the third conductive adhesive layer 20b. In the rectangular space enclosed by the four conductive adhesive layers 20a.
  • any adjacent wire grooves are separated by a conductive adhesive layer, and the conductive adhesive layer is attached to both sides of each wire groove.
  • the insulating and thermally conductive adhesive layer 10 is provided with a groove matching each conductive adhesive layer , The shape of the groove is similar to the shape of the corresponding conductive adhesive layer.
  • the conductive adhesive layer passes through the insulating and thermally conductive adhesive layer 10 and is attached to the wave-absorbing and shielding structure 30. When the shielding component is assembled on the substrate, the conductive adhesive layer is connected to the ground on the substrate, thereby achieving electrical isolation of the communication wires and avoiding crosstalk between adjacent communication wires.
  • each conductive adhesive layer cooperates with the wave-absorbing shielding structure to electromagnetically isolate the components (chips and communication wires) covered in the shielding assembly from the components outside the shielding assembly (such as the antenna in FIG. 1).
  • each conductive adhesive layer (the first conductive adhesive layer 20d, the second conductive adhesive layer 20c, the third conductive adhesive layer 20b, and the fourth conductive adhesive layer 20a) has an edge extending along the edge of the wave-absorbing shielding structure.
  • this part of the structure is arranged around at least part of the 10 layers of insulating and thermally conductive glue, thereby isolating the chip and the communication wire from the antenna connected to it (refer to the structure of the radio frequency antenna A and A in Figure 1), improving the chip and The shielding effect of communication wires.
  • the conductive adhesive layer provided by the embodiment of the present application is not only used to isolate the communication wires connected to the pins, but also used to connect to the substrate where the chip is located.
  • the shielding component is matched with the chip, the shielding component is adhesively connected to the substrate through the conductive adhesive layer.
  • the conductive adhesive layer provided by the embodiment of the present application is located on the three sides of the first surface and is bonded to the substrate. When connecting, it can be firmly bonded to the substrate to ensure the reliability of the connection with the substrate.
  • the structural shape of the thermally conductive adhesive layer provided in the embodiments of this application is not limited to the shape shown in Figure 2 above, and can also be based on the shielding of the communication wires and the adhesion of the shielding component to the substrate.
  • two conductive adhesive layers may be arranged between any two wire grooves for electromagnetic isolation, and at the same time, the bonding effect with the substrate is enhanced.
  • FIG. 3 shows a schematic diagram of the structure of the shielding assembly removing part of the insulating and thermally conductive adhesive layer 10.
  • the shielding assembly shown in FIG. 3 includes a wave-absorbing shielding structure 30.
  • the wave-absorbing shielding structure 30 is a shell structure with a cavity in the middle for accommodating the insulating and thermally conductive adhesive layer. When in use, the insulating and thermally conductive adhesive layer is filled in The structure shown in Figure 2 is formed in the middle cavity. 2 and 3 together, it can be seen that the wave-absorbing shielding structure 30 is arranged around the receiving groove 11.
  • the wave absorbing and shielding structure 30 can be made of different materials, and only need to be capable of absorbing or reflecting waves.
  • the wave absorbing and shielding structure 30 uses a wave absorbing resin.
  • the side of the wave absorbing shielding structure 30 facing the receiving groove 11 is provided with a plurality of protrusions, and the multiple protrusions are arranged in a spiral shape on the side of the wave absorbing shielding structure 30 facing the receiving groove 11.
  • FIG. 4 shows a partial cross-sectional view of the wave-absorbing shield structure 30. It can be seen from FIG. 4 that the direction of the convex structure 33 of each convex structure 33 faces one side of the receiving groove 11. Continuing to refer to FIG. 4, a plurality of protruding structures 33 are arranged at intervals to form a structure similar to a battlement.
  • the side surface on each convex structure 33 is a reflective surface 32 or a wave absorbing surface 31, and the reflective surface 32 and the wave absorbing surface 31 are alternately arranged. As shown in FIG.
  • the reflecting surface 32 and the wave absorbing surface 31 are surfaces inclined outwardly relative to the receiving groove 11, wherein the included angle between the reflecting surface 32 and the axis of the receiving groove 11 is not greater than 10°, for example, the included angle It is 2°, 5°, 8°, 10°, etc.
  • the included angle between the wave-absorbing surface 31 and the axis of the containing groove 11 is not greater than 60°, and exemplary, the included angle is 20°, 30°, 40°, 50°, 60°, and so on.
  • FIG. 5 shows a schematic structural diagram of the insulating and thermally conductive adhesive layer 10 after being taken out from the wave-absorbing shielding structure 30. It can be seen from FIG. 5 that when there are multiple convex structures in the wave-absorbing shielding structure 30, the corresponding insulating and thermally conductive adhesive layer 10 has a concave structure 13 that matches the convex structure.
  • the wave absorbing and shielding structure 30 in the embodiments of the present application is not limited to the structure shown in FIG. 4, and other structures may also be used.
  • the wave absorbing and shielding structure 30 only includes a reflective surface 32. 32 are arranged on the convex structure in a one-to-one correspondence; the absorbing and shielding structure 30 only includes the absorbing surface 31, and the absorbing surface 31 is arranged on the convex structure in one-to-one correspondence; the absorbing and shielding structure 30 includes a reflecting surface 32 and an absorbing surface 31, and the absorbing surface 31 It is arranged in a part of the raised structure, and the reflecting surface 32 is arranged in another part of the raised structure, such as a plurality of reflecting surfaces 32 and a plurality of wave absorbing surfaces 31 alternately arranged, as shown in Fig. 4 in a one-to-one alternate arrangement, Or two reflective surfaces 32 and two wave-absorbing surfaces 31 are alternately arranged, and two or more reflective surfaces 32 and two or more wave-absorbing surfaces 31 are alternately
  • the above-mentioned reflecting surface 32, wave absorbing surface 31 or wave absorbing reflecting surface disposed on the convex structure is only an example.
  • the wave absorbing shielding structure 30 provided in the embodiment of the present application can also carry the reflecting surface 32 and the wave absorbing surface 31 through other structures, such as An inclined surface is formed in the wave-absorbing and shielding structure 30, and the reflecting surface 32, the wave-absorbing surface 31 or the wave-absorbing and reflecting surface are arranged on the inclined surface, or a discontinuous inclined surface is formed in the wave-absorbing and shielding structure 30 as the reflecting surface 32 or the wave-absorbing surface 31. It can achieve the effect of absorption or reflection of electromagnetic waves.
  • only the side of the absorbing and shielding structure 30 facing the receiving groove 11 is provided with a plurality of reflecting surfaces 32 for reflecting electromagnetic waves, or the side of the absorbing and shielding structure 30 close to the setting surface of the receiving groove 11
  • a plurality of absorbing surfaces 31 for reflecting and absorbing electromagnetic waves are provided, or a side of the absorbing shielding structure 30 close to the installation surface of the containing groove 11 is provided with a plurality of reflecting surfaces 32 for reflecting electromagnetic waves and a plurality of reflecting surfaces 32 for reflecting and absorbing electromagnetic waves.
  • the electromagnetic wave absorbing surface 31 can realize the shielding of the chip, and the specific bearing structure of the absorbing surface 31 and the reflecting surface 32 is not specifically limited in this application.
  • FIG. 6 shows a shielding assembly provided by an embodiment of the present application.
  • the shielding assembly shown in FIG. 6 includes the wave-absorbing shielding structure 30 shown in FIGS. 2 and 3 and the insulating and thermally conductive adhesive layer 10 .
  • the difference between the shielding assembly shown in FIG. 6 and FIG. 2 is that the shielding assembly in FIG. 6 is provided with a layer of radiator element 40a, and the radiator element 40a is provided on the side of the wave-absorbing shielding structure 30 away from the receiving groove.
  • the heat sink 40a is thermally connected to the wave-absorbing shielding structure 30, and the heat transferred from the chip to the insulating and thermally conductive adhesive layer 10 is transmitted to the heat sink 40a through the wave-absorbing shielding structure 30 to be dissipated.
  • the heat sink 40a can be made of copper, aluminum, iron, stainless steel, etc. Made of metals with higher coefficients.
  • the heat sink 40a shown in FIG. 6 is provided with a plurality of heat dissipation protrusions 41, and the plurality of heat dissipation protrusions 41 are arranged in an array on the heat sink 40a.
  • the heat dissipation protrusions 41 are hollow structures, which are formed by stamping or die-casting.
  • One surface of the heat sink 40a is convex, and the other surface is concave.
  • a projection 34a is formed on the mating surface of the insulating and thermally conductive adhesive layer 10 and the heat sink 40a corresponding to each recessed structure.
  • the heat sink 40a when the heat sink 40a is embedded in the wave absorbing shield structure 30, the heat sink 40a is directly bonded to the wave absorbing shield structure 30, and the distance between the heat sink 40a and the edge of the wave absorbing shield structure 30 is not less than 0.8 mm, such as Different distances such as 0.8mm, 0.9mm, 1mm, etc., are used to improve the reliability of the connection between the heat sink 40a and the wave-absorbing shielding structure 30.
  • the protrusion 34a of the wave-absorbing shielding structure 30 is inserted into the recessed structure of the heat sink 40a and is attached to the recessed structure to increase the contact area between the wave-absorbing shielding structure 30 and the heat sink 40a, thereby increasing the heat dissipation area.
  • the heat sink 40a can increase the heat dissipation area of the heat sink 40a by providing the heat dissipation protrusion 41, and at the same time increase the contact area between the heat sink 40a and the wave-absorbing shielding structure 30, thereby improving the heat dissipation effect.
  • the heat sink 40a can also be used as a shielding structure. It can be seen from FIG. 6 that when the heat sink 40a is disposed in the wave-absorbing shielding structure 30, it covers the receiving groove 11, and the metal itself has the ability to reflect electromagnetic waves. Therefore, the heat sink 40a provided can also achieve a shielding effect on the chip and improve the working environment of the chip.
  • the shielding assembly shown in FIG. 7 includes the wave-absorbing shielding structure 30 and the insulating and thermally conductive adhesive layer 10 shown in FIGS. 2 and 3.
  • the difference between the shielding assembly shown in FIG. 7 and FIG. 6 is that the structure of the heat sink device 40 b in FIG. 7 is different from that of the heat sink device 40 b shown in FIG. 6.
  • the heat sink 40b is arranged on the side of the wave-absorbing shielding structure 30 away from the receiving groove 11 and is thermally connected to the wave-absorbing shielding structure 30.
  • the radiator element 40b shown in FIG. 7 is a rib-shaped structure 42.
  • the radiator element 40b is composed of a plurality of bent structures with a trapezoidal cross section.
  • the wave-absorbing and shielding structure 30 is provided with a rib-shaped structure corresponding to the radiator element 40b. 34b.
  • the radiator element 40b is embedded in the wave-absorbing shielding structure 30, and the rib-shaped structure 42 of the radiator element 40b is matched with the rib-shaped structure 34b (groove and protrusion structure) corresponding to the radiator element 40b in a one-to-one correspondence.
  • the contact area between the wave-absorbing shielding structure 30 and the heat sink 40b is increased, thereby increasing the heat dissipation area.
  • the heat sink 40b in FIG. 7 also covers the receiving groove 11, and the metal itself has the effect of reflecting electromagnetic waves. Therefore, the heat sink 40b provided can also achieve the shielding effect of the chip and improve the working environment of the chip.
  • the shielding assembly shown in FIG. 8 includes the wave absorbing shield structure 30 and the wave absorbing shield structure 30 shown in FIGS. 2 and 3.
  • the difference between the shielding assembly shown in FIG. 8 and FIG. 6 is that the structure of the heat sink device 40c in FIG. 8 is different from that of the heat sink device 40c shown in FIG. 6.
  • the heat sink 40c is disposed on the side of the wave-absorbing shielding structure 30 away from the receiving groove 11 and is thermally connected to the wave-absorbing shielding structure 30.
  • the radiator element 40c shown in FIG. 8 is a wave-shaped structure 43.
  • the radiator element 40c is composed of a plurality of bent structures with a trapezoidal cross-section.
  • the wave-absorbing and shielding structure 30 is provided with a wave-shaped structure 34c corresponding to the radiator element 40c. Groove and convex structure).
  • the radiator element 40c is embedded in the wave absorbing shield structure 30, and the wave-shaped structure 43 of the radiator element 40c and the wave-shaped structure 34c corresponding to the radiator element 40c are matched in one-to-one correspondence to enlarge the wave-absorbing shield structure 30 and the radiator element.
  • the contact area of 40c increases the heat dissipation area.
  • the heat sink 40c in FIG. 8 also covers the wave-absorbing shielding structure 30 and the receiving groove 11, and the metal itself has the effect of reflecting electromagnetic waves. Therefore, the heat sink 40c provided can also achieve the shielding effect of the chip and improve the working environment of the chip.
  • FIG. 6 to 8 only illustrate several specific structural forms of the heat sink.
  • the structure of the heat sink is not limited to the structural forms of Figures 6 to 8 Other structural forms can also be adopted, for example, a rectangular plate is used for the heat sink, and no other structure is provided, or the heat sink is provided with protrusions such as cylindrical protrusions, triangular protrusions, etc., which improve the heat dissipation effect.
  • the electromagnetic wave shielding method mainly includes shielding and absorption.
  • the shielding is the skin effect on the surface of the shielding structure, which converts electromagnetic energy into heat energy.
  • electromagnetic wave shielding materials There are two main types of electromagnetic wave shielding materials: metal materials and wave absorbing materials.
  • the metal shielding structure has the best blocking effect, but there is relatively strong electromagnetic wave reflection, which is prone to the problem of saturation of the shielding cavity.
  • the blocking effect of the absorbing material structure is better, the reflection of electromagnetic waves is relatively weak, and there is no problem of saturation of the shielding cavity.
  • the heat sink and the wave-absorbing shielding structure 30 are used to improve the shielding performance of the chip, and the working environment of the chip is improved.
  • the heat sink and the wave-absorbing shielding structure 30 also cover The wiring groove is avoided, the external electromagnetic waves are prevented from affecting the pins in the wiring groove, and the communication effect of the entire chip is improved.
  • FIG. 9 shows a schematic diagram of the internal structure of a communication device provided by an embodiment of the present application.
  • the communication device shown in FIG. 9 includes a substrate 100, and components such as a chip 200 and an antenna disposed on the substrate 100, wherein the chip 200 and the antenna are connected through a pin and a communication wire 201 connected thereto.
  • the chip 200 is shielded by the shielding assembly 300.
  • the shielding assembly 300 is adhesively connected to the substrate 100, specifically connected to the substrate 100 through a conductive adhesive layer, and the chip 200 is located in the receiving groove 11 and thermally connected to the insulating and thermally conductive adhesive layer 10.
  • the surrounding wave-absorbing shielding structure realizes the shielding of the chip 200 by absorbing or reflecting electromagnetic waves, and at the same time electromagnetically isolates the communication wires 201 connected to the adjacent pins (transmitting and receiving pins) by the conductive adhesive layer, reducing The crosstalk between the communication wires improves the working effect of the chip.
  • the embodiment of the application also provides a vehicle-mounted device, such as a vehicle-mounted millimeter wave radar.
  • vehicle-mounted equipment includes a substrate, a chip provided on the substrate, and the shielding assembly of any one of the above; wherein the shielding assembly is adhesively connected to the substrate, and the chip is located in the receiving groove ;
  • the chip is thermally connected to the insulating and thermally conductive adhesive layer.
  • the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves.
  • the adjacent transmitting pins and the communication wires connected to the receiving pins are electromagnetically separated by the conductive adhesive layer to reduce the communication wires. The crosstalk between the two improves the working effect of the chip.

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Abstract

Provided in the present application are a shielding assembly, a vehicle-mounted device and a communication device. The shielding assembly comprises a wave-absorbing shielding structure and an insulating heat-conducting adhesive layer, wherein the wave-absorbing shielding structure is a housing structure, and the insulating heat-conducting adhesive layer fills the housing structure; and the shielding assembly further comprises an anti-adhesion layer wrapped around the insulating heat-conducting adhesive layer, wherein the anti-adhesion layer is an elastic layer, the insulating heat-conducting adhesive layer is provided with a coverage area for covering a peripheral area of a chip, some areas are reserved in the coverage area to be applied with a conductive adhesive layer, and the conductive adhesive layer is used for isolating a plurality of communication wires connected to the chip. The chip is shielded by absorbing or reflecting electromagnetic waves through the wave-absorbing shielding structure, and meanwhile, the communication wires connected to adjacent transmitting pins and receiving pins are electromagnetically isolated through the conductive adhesive layer, so that crosstalk among the communication wires is reduced. The heat dissipation and shielding effects of the chip are well balanced, and the effect of the chip when working is improved.

Description

一种屏蔽组件、车载设备及通信设备Shielding component, vehicle-mounted equipment and communication equipment
相关申请的交叉引用Cross-references to related applications
本申请要求在2019年12月30日提交中国专利局、申请号为201911398528.8、申请名称为“一种屏蔽组件、车载设备及通信设备”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application filed with the Chinese Patent Office, the application number is 201911398528.8, and the application name is "a shielding assembly, vehicle-mounted equipment, and communication equipment" on December 30, 2019. The entire content is incorporated by reference. In this application.
技术领域Technical field
本申请涉及到通信技术领域,尤其涉及到一种屏蔽组件、车载设备及通信设备。This application relates to the field of communication technology, and in particular to a shielding component, a vehicle-mounted device, and a communication device.
背景技术Background technique
对于高频(例如ICT无线产品)和超高频(例如车载毫米波雷达)的产品,其天线由射频芯片驱动。其中车载毫米波雷达的射频芯片集成度越来越高,部分型号的发射天线和接收天线由一片射频芯片驱动,部分型号的发射天线和接收天线由不同的距离比较近的射频芯片分别驱动。为了预防射频芯片受到外界的毫米波干扰,需要隔离射频芯片与外界的毫米波射频信号;为了预防射频芯片的收发之间串扰,需要隔离射频芯片发射管脚与接收管脚(包括延伸电路)的毫米波射频信号。但是现有技术中并不能良好的屏蔽射频芯片。For high frequency (such as ICT wireless products) and ultra-high frequency (such as vehicle millimeter wave radar) products, the antenna is driven by a radio frequency chip. Among them, the integration of radio frequency chips of vehicle-mounted millimeter wave radars is getting higher and higher. Some types of transmitting antennas and receiving antennas are driven by a single radio frequency chip, and some types of transmitting antennas and receiving antennas are driven by different radio frequency chips that are relatively close. In order to prevent the radio frequency chip from being interfered by the external millimeter wave, it is necessary to isolate the radio frequency chip from the external millimeter wave radio frequency signal; in order to prevent the crosstalk between the transceiver of the radio frequency chip, it is necessary to isolate the radio frequency chip transmitting pin and the receiving pin (including the extension circuit) Millimeter wave radio frequency signal. However, the radio frequency chip cannot be shielded well in the prior art.
发明内容Summary of the invention
本申请提供了一种屏蔽组件、车载设备及通信设备,用以改善屏蔽组件对芯片的散热及屏蔽效果。The present application provides a shielding component, a vehicle-mounted device, and a communication device to improve the heat dissipation and shielding effect of the shielding component on the chip.
第一方面,提供了一种屏蔽组件,该屏蔽组件应用于对芯片的保护,屏蔽组件具体包括:吸波屏蔽结构以及绝缘导热胶层;其中,所述吸波屏蔽结构为壳体结构,所述绝缘导热胶层填充在所述壳体结构内;还包括包裹所述绝缘导热胶层的防粘接层,所述防粘接层为弹性层;其中,所述绝缘导热胶层具有用于覆盖芯片周边区域的覆盖区;其中,所述覆盖区内预留有一些区域,用于涂导电胶层,所述导电胶层用于隔离所述芯片连接的多个通信导线。在屏蔽组件与芯片配合时,芯片的周边区域包含芯片及芯片连接的通信导线。覆盖区覆盖芯片,绝缘导热胶层挤压出一个槽体容纳芯片,对应的覆盖区内挤压出容纳通信导线的槽体。芯片通过防粘接层与绝缘导热胶层接触,芯片产生的热量通过绝缘导热胶层传递出去进行散热。而吸波屏蔽结构环绕所述容纳槽并用于屏蔽所述芯片。覆盖区内预留有一些区域,用于涂导电胶层,导电胶层用于隔离所述芯片连接的多个通信导线。即芯片的接收管脚以及发射管脚连接的通信导线通过设置的导电胶层隔离开,避免通信导线之间的串扰。在使用时,通过环绕设置的吸波屏蔽结构通过吸收或者反射电磁波的方式实现对芯片的屏蔽,同时通过导电胶层电磁隔离相邻的发射管脚及接收管脚连接的通信导线,降低通信导线之间的串扰,改善了芯片的工作效果。此外,所述导电胶层将所述绝缘导热胶层覆盖的所述芯片及所述通信导线与所述屏蔽组件外电磁隔离,改善了芯片的工作环境,进而提高了芯片的工作效果。In a first aspect, a shielding assembly is provided, which is applied to protect the chip. The shielding assembly specifically includes: a wave-absorbing shielding structure and an insulating and thermally conductive adhesive layer; wherein the wave-absorbing shielding structure is a shell structure, so The insulating and thermally conductive adhesive layer is filled in the housing structure; it also includes an anti-adhesion layer that wraps the insulating and thermally conductive adhesive layer, the anti-adhesion layer is an elastic layer; wherein, the insulating and thermally conductive adhesive layer is used for A coverage area covering the peripheral area of the chip; wherein some areas are reserved in the coverage area for coating a conductive adhesive layer, and the conductive adhesive layer is used to isolate a plurality of communication wires connected to the chip. When the shielding component is matched with the chip, the peripheral area of the chip includes the chip and the communication wires connected to the chip. The covering area covers the chip, the insulating and thermally conductive adhesive layer extrudes a groove to accommodate the chip, and the corresponding covering area extrudes a groove for accommodating communication wires. The chip is in contact with the insulating and thermally conductive adhesive layer through the anti-adhesive layer, and the heat generated by the chip is transferred through the insulating and thermally conductive adhesive layer for heat dissipation. The wave-absorbing shielding structure surrounds the containing groove and is used to shield the chip. Some areas are reserved in the coverage area for coating a conductive adhesive layer, and the conductive adhesive layer is used to isolate a plurality of communication wires connected to the chip. That is, the communication wires connected to the receiving pins and the transmitting pins of the chip are separated by a conductive adhesive layer, so as to avoid crosstalk between the communication wires. In use, the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves. At the same time, the adjacent transmitting pins and the communication wires connected to the receiving pins are electromagnetically separated by the conductive adhesive layer to reduce the communication wires. The crosstalk between the two improves the working effect of the chip. In addition, the conductive adhesive layer electromagnetically isolates the chip and the communication wire covered by the insulating and thermally conductive adhesive layer from the outside of the shielding assembly, thereby improving the working environment of the chip, thereby improving the working effect of the chip.
在一个具体的可实施方案中,所述芯片为射频芯片;所述通信导线包括与所述射频芯 片连接的总线,以及与所述总线连接的至少两个分支线,每个分支线连接有天线;所述绝缘导热胶的覆盖区覆盖所述射频芯片,且所述绝缘导热胶层挤压出与所述射频芯片对应的容纳槽;所述绝缘导热胶的覆盖区覆盖所述总线及所述至少两个分支线,且所述绝缘导热胶层挤压出与所述总线及所述至少两个分支线对应的导线槽。降低了芯片连接的通信导线之间的串扰,提高了芯片的工作效果。In a specific implementation, the chip is a radio frequency chip; the communication wire includes a bus connected to the radio frequency chip, and at least two branch lines connected to the bus, each branch line is connected with an antenna The covered area of the insulating and thermally conductive adhesive covers the radio frequency chip, and the insulating and thermally conductive adhesive layer extrudes a receiving groove corresponding to the radio frequency chip; the covered area of the insulating and thermally conductive adhesive covers the bus and the At least two branch lines, and the insulating and thermally conductive adhesive layer extrudes a wire groove corresponding to the bus and the at least two branch lines. The crosstalk between the communication wires connected to the chip is reduced, and the working effect of the chip is improved.
在一个具体的可实施方案中,所述壳体结构上设置有避让所述通信导线的避让槽。方便通信导线穿过吸波屏蔽结构。In a specific implementation, the housing structure is provided with an escape groove for avoiding the communication wire. It is convenient for communication wires to pass through the wave-absorbing shielding structure.
在一个具体的可实施方案中,所述吸波屏蔽结构朝向所述容纳槽的一侧设置有多个用于反射电磁波的反射面;或,In a specific implementation, the wave-absorbing shielding structure is provided with a plurality of reflecting surfaces for reflecting electromagnetic waves on the side facing the containing groove; or,
所述吸波屏蔽结构靠近所述容纳槽设置面的一侧设置有多个用于吸收电磁波的吸波面;A plurality of wave-absorbing surfaces for absorbing electromagnetic waves are provided on one side of the wave-absorbing shielding structure close to the setting surface of the containing groove;
所述吸波屏蔽结构靠近所述容纳槽设置面的一侧设置有多个用于反射电磁波的反射面及多个吸收电磁波的吸波面。通过吸波屏蔽结构采用反射或者吸收电磁波的方式,实现芯片与毫米波射频信号之间的隔离。A plurality of reflecting surfaces for reflecting electromagnetic waves and a plurality of absorbing surfaces for absorbing electromagnetic waves are provided on the side of the wave-absorbing shielding structure close to the installation surface of the containing groove. The wave-absorbing shielding structure adopts the method of reflecting or absorbing electromagnetic waves to realize the isolation between the chip and the millimeter wave radio frequency signal.
在一个具体的可实施方案中,所述吸波屏蔽结构间隔设置有多个凸起结构,所述吸波面一一对应设置在所述凸起结构;或,In a specific implementation, the wave-absorbing shielding structure is provided with a plurality of raised structures at intervals, and the wave-absorbing surfaces are arranged on the raised structures in a one-to-one correspondence; or,
所述反射面一一对应设置在所述凸起结构;或,The reflecting surfaces are arranged on the protruding structure in a one-to-one correspondence; or,
所述吸波面设置在部分凸起结构,所述反射面设置在另一部分凸起结构。通过凸起结构承载上述的吸波面及反射面。The wave absorbing surface is arranged on a part of the convex structure, and the reflecting surface is arranged on another part of the convex structure. The above-mentioned wave absorbing surface and reflecting surface are carried by the convex structure.
在一个具体的可实施方案中,所述多个凸起呈螺旋状排列在所述吸波屏蔽结构朝向所述容纳槽的一面。提高了屏蔽效果。In a specific implementation, the plurality of protrusions are spirally arranged on the side of the wave-absorbing shielding structure facing the receiving groove. Improve the shielding effect.
在一个具体的可实施方案中,所述吸波屏蔽结构为吸波树脂制备而成的吸波屏蔽结构。具有良好的吸波效果。In a specific implementation, the wave absorbing and shielding structure is a wave absorbing and shielding structure made of a wave absorbing resin. Has a good absorbing effect.
在一个具体的可实施方案中,所述导电胶层至少环绕部分所述绝缘导热胶层设置。通过导电胶层环绕部分绝缘导热胶层,以实现芯片及连接的通信导线与屏蔽组件外进行电磁隔离。In a specific implementation, the conductive adhesive layer is disposed around at least a part of the insulating and thermally conductive adhesive layer. The conductive adhesive layer surrounds part of the insulating and thermal conductive adhesive layer to achieve electromagnetic isolation between the chip and the connected communication wire and the shielding assembly.
在一个具体的可实施方案中,所述屏蔽组件还包括散热器件;所述散热器件设置在所述吸波屏蔽结构背离所述容纳槽的一面。通过散热器件实现对芯片的屏蔽。In a specific implementation, the shielding assembly further includes a heat sink; the heat sink is arranged on a side of the wave-absorbing shielding structure facing away from the receiving groove. The chip is shielded by the heat sink.
在一个具体的可实施方案中,所述散热器件与所述吸波屏蔽结构导热连接。以及对芯片的散热。In a specific implementation, the heat dissipating device is thermally connected to the wave-absorbing shielding structure. And the heat dissipation of the chip.
在一个具体的可实施方案中,所述散热器件设置有多个散热凸起;或,所述散热器件为肋筋形、波浪形。提高散热器件的散热面,进而提高散热效果。In a specific implementation, the heat sink element is provided with a plurality of heat dissipation protrusions; or, the heat sink element is rib-shaped or wave-shaped. Improve the heat dissipation surface of the radiator, thereby improving the heat dissipation effect.
在一个具体的可实施方案中,所述散热器件镶嵌在所述吸波屏蔽结构。保证散热器件与绝缘导热胶层的热接触效果。In a specific implementation, the heat sink is embedded in the wave-absorbing shielding structure. Ensure the thermal contact effect between the radiator and the insulating and thermal conductive adhesive layer.
在一个具体的可实施方案中,所述散热器件距离所述吸波屏蔽结构的边沿的距离不小于0.8mm。保证散热器件能够可靠的固定在绝缘导热胶层中。In a specific implementation, the distance between the heat sink device and the edge of the wave-absorbing shielding structure is not less than 0.8 mm. Ensure that the heat sink can be reliably fixed in the insulating and thermally conductive adhesive layer.
在一个具体的可实施方案中,所述防粘接层为高弹性膜层。示例性的,所述防粘接层为具有三倍拉伸量、六倍拉伸量的防粘接层。In a specific implementation, the anti-adhesion layer is a highly elastic film layer. Exemplarily, the anti-adhesion layer is an anti-adhesion layer having a three-fold stretch and a six-fold stretch.
在一个具体的可实施方案中,所述防粘接层为有机硅薄膜层。具有良好的隔离效果。In a specific implementation, the anti-adhesion layer is an organic silicon thin film layer. Has a good isolation effect.
第二方面,提供了一种通信设备,该通信设备包括基板,设置在所述基板上的芯片, 以及上述任一项所述的屏蔽组件;其中,所述屏蔽组件与所述基板粘接连接,且所述芯片位于所述容纳槽中;所述芯片与所述绝缘导热胶层导热连接。在使用时,通过环绕设置的吸波屏蔽结构通过吸收或者反射电磁波的方式实现对芯片的屏蔽,同时通过导电胶层电磁隔离相邻的发射管脚及接收管脚连接的导线,降低导线之间的串扰,改善了芯片的工作效果。In a second aspect, a communication device is provided. The communication device includes a substrate, a chip disposed on the substrate, and the shielding assembly according to any one of the above; wherein the shielding assembly is adhesively connected to the substrate , And the chip is located in the containing groove; the chip is thermally connected to the insulating and thermally conductive adhesive layer. When in use, the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves. At the same time, the conductive adhesive layer electromagnetically isolates the adjacent transmitting pins and the wires connected to the receiving pins, reducing the distance between the wires. The crosstalk improves the working effect of the chip.
第三方面,提供了一种车载设备,该车载设备包括基板,设置在所述基板上的芯片,以及上述任一项所述的屏蔽组件;其中,所述屏蔽组件与所述基板粘接连接,且所述芯片位于所述容纳槽中;所述芯片与所述绝缘导热胶层导热连接。在使用时,通过环绕设置的吸波屏蔽结构通过吸收或者反射电磁波的方式实现对芯片的屏蔽,同时通过导电胶层电磁隔离相邻的发射管脚及接收管脚连接的导线,降低导线之间的串扰,改善了芯片的工作效果。In a third aspect, an in-vehicle device is provided. The in-vehicle device includes a substrate, a chip provided on the substrate, and the shielding assembly according to any one of the above; wherein the shielding assembly is adhesively connected to the substrate , And the chip is located in the containing groove; the chip is thermally connected to the insulating and thermally conductive adhesive layer. When in use, the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves. At the same time, the conductive adhesive layer electromagnetically isolates the adjacent transmitting pins and the wires connected to the receiving pins, reducing the distance between the wires. The crosstalk improves the working effect of the chip.
附图说明Description of the drawings
图1为本申请实施例提供的射频芯片的结构框图;FIG. 1 is a structural block diagram of a radio frequency chip provided by an embodiment of the application;
图2为本申请实施例提供的示意图;Figure 2 is a schematic diagram provided by an embodiment of the application;
图3为本申请实施例提供的屏蔽组件中内部的吸波屏蔽组件结构示意图;3 is a schematic diagram of the structure of the inner wave-absorbing shielding component in the shielding component provided by the embodiment of the application;
图4为本申请实施例提供的吸波屏蔽结构的截面示意图;4 is a schematic cross-sectional view of a wave absorbing and shielding structure provided by an embodiment of the application;
图5为本申请实施例提供的绝缘导热胶层从稀薄屏蔽结构中取出后的结构示意图;FIG. 5 is a schematic structural diagram of the insulating and thermally conductive adhesive layer provided by the embodiment of the application after being taken out from the thin shielding structure;
图6为本申请实施例提供的另一种屏蔽组件的分解示意图;FIG. 6 is an exploded schematic diagram of another shielding component provided by an embodiment of the application;
图7为本申请实施例提供的另一种屏蔽组件的分解示意图;FIG. 7 is an exploded schematic diagram of another shielding component provided by an embodiment of the application;
图8为本申请实施例提供的另一种屏蔽组件的分解示意图;FIG. 8 is an exploded schematic diagram of another shielding component provided by an embodiment of the application;
图9为本申请实施例提供的通信设备的内部结构示意图。FIG. 9 is a schematic diagram of the internal structure of a communication device provided by an embodiment of the application.
具体实施方式Detailed ways
为方便理解本申请实施例提供的屏蔽组件,首先说明一下其应用场景,本申请实施例提供的屏蔽组件用于高频(例如ICT无线产品)和超高频(例如车载毫米波雷达)的产品,用于对射频芯片的屏蔽。为方便理解首先说明一下射频芯片的结构,如图1中所示,现有的射频芯片设置在一个基板100上,射频芯片100上设置有接收管脚以及发射管脚,在射频芯片100组装到高频产品或超高频产品内时,射频芯片100的接收管脚通过通信导线201与接收天线202连接,其中,通信导线201包括与射频芯片100连接的总线201a,以及与总线201a连接的两个分支线201b,每个分支线201b连接一个接收天线202,当然分支线201b也可以设置为三个、四个等不同的个数。在图1中所示的两个射频芯片100中,位于上方的射频芯片100(以图1中射频芯片100的放置位置为参考方向)连接了四组接收天线202,每组接收天线202包括两个天线。位于下方的射频芯片100通过通信导线201连接了五组接收天线202,每组接收天线202中包含两个天线。继续参考图1,位于下方的射频芯片100还通过通信导线201连接了发射天线203,在图1中,发射天线203为一组,且一组发射天线203包含两个天线。通过上述的发射天线203以及接收天线202组成整个产品的通信天线系统。现有技术中的屏蔽组件在屏蔽射频芯片100时,仅仅对射频芯片100进行了屏蔽,而射频芯片100连接的通信导线201之间仍然会存在串扰,如图1中所示的 A区域。为此本申请实施例提供了一种屏蔽组件,用以改善射频芯片100的工作环境,提高射频芯片100的工作效果。In order to facilitate the understanding of the shielding components provided in the embodiments of this application, first explain its application scenarios. The shielding components provided in the embodiments of this application are used for high-frequency (such as ICT wireless products) and ultra-high-frequency (such as vehicle millimeter wave radar) products. , Used to shield the radio frequency chip. To facilitate understanding, first explain the structure of the radio frequency chip. As shown in FIG. 1, the existing radio frequency chip is arranged on a substrate 100. The radio frequency chip 100 is provided with receiving pins and transmitting pins. The radio frequency chip 100 is assembled to In a high-frequency product or an ultra-high frequency product, the receiving pin of the radio frequency chip 100 is connected to the receiving antenna 202 through a communication wire 201, wherein the communication wire 201 includes a bus 201a connected to the radio frequency chip 100, and two buses connected to the bus 201a. There are two branch lines 201b, and each branch line 201b is connected to one receiving antenna 202. Of course, the number of branch lines 201b can also be set to three or four. In the two radio frequency chips 100 shown in FIG. 1, the upper radio frequency chip 100 (taking the placement position of the radio frequency chip 100 in FIG. 1 as the reference direction) is connected to four groups of receiving antennas 202, and each group of receiving antennas 202 includes two Antennas. The radio frequency chip 100 located below is connected to five groups of receiving antennas 202 through communication wires 201, and each group of receiving antennas 202 includes two antennas. Continuing to refer to FIG. 1, the radio frequency chip 100 located below is also connected to a transmitting antenna 203 through a communication wire 201. In FIG. 1, the transmitting antenna 203 is a group, and the group of transmitting antennas 203 includes two antennas. The communication antenna system of the entire product is formed by the above-mentioned transmitting antenna 203 and receiving antenna 202. When the shielding component in the prior art shields the radio frequency chip 100, it only shields the radio frequency chip 100, but there will still be crosstalk between the communication wires 201 connected to the radio frequency chip 100, as shown in area A in FIG. 1. For this reason, the embodiment of the present application provides a shielding component to improve the working environment of the radio frequency chip 100 and improve the working effect of the radio frequency chip 100.
首先说明本申请中下文中的芯片指的是射频芯片。在本申请中以屏蔽组件屏蔽一个射频芯片为例进行的说明,但是应当理解的是,本申请实施例提供的屏蔽组件也可以屏蔽两个或者三个等不同的射频芯片,其结构与屏蔽组件屏蔽一个射频芯片的结构相类似,仅仅是不见尺寸的变化,因此下面结合附图以屏蔽组件屏蔽一个射频芯片为例进行说明。First, it is explained that the chip in the following in this application refers to a radio frequency chip. In this application, the shielding component shields one radio frequency chip as an example. However, it should be understood that the shielding component provided in the embodiment of this application can also shield two or three different radio frequency chips, and its structure is similar to that of the shielding component. The structure of shielding a radio frequency chip is similar, except that the size change is not visible. Therefore, the following describes an example of shielding a radio frequency chip by a shielding component with reference to the accompanying drawings.
如图2所示,图2示例出了本申请实施例提供的一种屏蔽组件的结构示意图。在图2所示的屏蔽组件包括吸波屏蔽结构30及绝缘导热胶层10。吸波屏蔽结构30为一个壳体结构,其中间为用于容纳绝缘导热胶层10的腔体,绝缘导热胶层10具有第一表面,在图2中第一表面为矩形面,其具有四个相对的侧边,为方面描述将其分别命名为第一侧边、第二侧边、第三侧边及第四侧边。第一表面具有用于覆盖芯片周边区域的覆盖区(如图1中的虚线框a所示的区域),覆盖区也可以为绝缘导热胶层10的第一表面。其中,芯片周边区域为包含芯片以及芯片连接的通信导线的区域,在芯片周边具有其他电子器件时,如电容或者电感时,覆盖区a也将其覆盖。绝缘导热胶层10的覆盖区在覆盖芯片时,绝缘导热胶层10挤压出与芯片对应的容纳槽11,在图2中示例出了容纳槽11的形状,容纳槽11位于第一表面的中间位置或近似中间的位置。在图2中容纳槽11为长方体形容纳槽,但是在本申请实施例中并不限定容纳槽11的形状,容纳槽11的形状可以根据芯片的形状而定,如芯片为圆形、椭圆形或者其他形状,容纳槽11对应设置成与芯片匹配的形状,或者其他保证芯片能够放入到容纳槽11内的形状。As shown in FIG. 2, FIG. 2 illustrates a schematic structural diagram of a shielding assembly provided by an embodiment of the present application. The shielding assembly shown in FIG. 2 includes a wave-absorbing shielding structure 30 and an insulating and thermally conductive adhesive layer 10. The wave-absorbing and shielding structure 30 is a shell structure, in which is a cavity for accommodating the insulating and thermally conductive adhesive layer 10. The insulating and thermally conductive adhesive layer 10 has a first surface. The first surface in FIG. 2 is a rectangular surface with four The two opposite sides are named the first side, the second side, the third side, and the fourth side for the aspect description. The first surface has a covering area for covering the peripheral area of the chip (the area shown by the dashed frame a in FIG. 1 ), and the covering area may also be the first surface of the insulating and thermally conductive adhesive layer 10. Among them, the chip peripheral area is the area containing the chip and the communication wires connected to the chip. When there are other electronic devices around the chip, such as capacitors or inductors, the coverage area a will also cover them. When the covered area of the insulating and thermally conductive adhesive layer 10 covers the chip, the insulating and thermally conductive adhesive layer 10 is extruded out of the receiving groove 11 corresponding to the chip. The shape of the receiving groove 11 is illustrated in FIG. 2, and the receiving groove 11 is located on the first surface. A middle position or a position close to the middle. In FIG. 2 the containing groove 11 is a rectangular parallelepiped containing groove, but the shape of the containing groove 11 is not limited in the embodiment of the present application. The shape of the containing groove 11 can be determined according to the shape of the chip, for example, the chip is circular or elliptical. Or other shapes, the containing groove 11 is correspondingly set to a shape matching the chip, or other shapes that ensure that the chip can be placed in the containing groove 11.
为避免绝缘导热胶层10与基板粘连,在绝缘导热胶层10外包裹了防粘接层(图中未示出),以避免绝缘导热胶层10与基板粘接在一起,方便屏蔽组件拆卸。其中防粘接层为弹性层,以保证防粘接层能够更随绝缘导热胶层10发生形变形成图2中所述的容纳槽11.示例性的,放粘接层采用高弹性的弹性层,如放粘接层具有两倍拉伸量、三倍拉伸量或者六倍拉伸量,以使得放粘接层具有足够的形变量与芯片周边区域内的器件相匹配。放粘接层可以采用不同的材料制备而成,如放粘接层为有机硅薄膜层,具体的可以为二甲基硅氧烷(PDMS)透气膜,透气膜厚度不大于0.05mm,如厚度为0.02mm、0.03mm、0.04mm、0.05mm。In order to avoid adhesion between the insulating and thermally conductive adhesive layer 10 and the substrate, an anti-adhesion layer (not shown in the figure) is wrapped around the insulating and thermally conductive adhesive layer 10 to prevent the insulating and thermally conductive adhesive layer 10 from adhering to the substrate and facilitate the disassembly of the shielding components. . The anti-adhesive layer is an elastic layer to ensure that the anti-adhesive layer can be more deformed with the insulating and thermally conductive adhesive layer 10 to form the receiving groove 11 described in Figure 2. Exemplarily, a highly elastic elastic layer is used for the adhesive layer For example, the bonding layer has twice the stretching amount, three times the stretching amount, or six times the stretching amount, so that the bonding layer has enough deformation to match the device in the peripheral area of the chip. The adhesive layer can be made of different materials, for example, the adhesive layer is a silicone film layer, specifically it can be a dimethylsiloxane (PDMS) breathable film, the thickness of the breathable film is not greater than 0.05mm, such as the thickness It is 0.02mm, 0.03mm, 0.04mm, 0.05mm.
芯片工作时产生的热量通过散热路径传递到散热器上。芯片的散热路径包括单不限于基板、壳体和管脚等,中间路径包括单不限于散热器与芯片之间直接接触或者填充导热材料,末端路径是散热器本体。本申请实施例提供的绝缘导热胶层10作为中间路径用于给芯片进行散热,在屏蔽组件与基板连接时,芯片位于容纳槽11内并与容纳槽11内的槽底导热连接,如芯片与容纳槽11的槽底直接连接,或者芯片通过导热硅脂与容纳槽11的槽底导热连接。示例性的,绝缘导热胶层10的导热率不小于1.5w/m.k,如导热率为1.5w/m.k、1.8w/m.k、2.0w/m.k、2.5w/m.k、3w/m.k等不同的导热率。绝缘导热胶的电阻率不小于1000v/mm,如电阻率为1000v/mm、1200v/mm、1500v/mm、1800v/mm、2000v/mm等不同的电阻率。绝缘导热胶层10的材料可以采用随着温度相变型的导热硅脂,但导热硅脂的液态变固态的相变温度不小于45℃。The heat generated when the chip is working is transferred to the radiator through the heat dissipation path. The heat dissipation path of the chip includes but is not limited to the substrate, the housing, and the pins. The intermediate path includes but is not limited to the direct contact between the heat sink and the chip or the filling of thermally conductive material. The end path is the heat sink body. The insulating and thermally conductive adhesive layer 10 provided by the embodiment of the present application is used as an intermediate path for dissipating heat to the chip. When the shielding component is connected to the substrate, the chip is located in the receiving groove 11 and thermally connected to the bottom of the receiving groove 11, such as the chip and The bottom of the accommodating groove 11 is directly connected, or the chip is thermally connected to the bottom of the accommodating groove 11 through thermally conductive silicone grease. Exemplarily, the thermal conductivity of the insulating and thermally conductive adhesive layer 10 is not less than 1.5w/mk, such as different thermal conductivity such as 1.5w/mk, 1.8w/mk, 2.0w/mk, 2.5w/mk, 3w/mk, etc. rate. The resistivity of the insulating and thermal conductive adhesive is not less than 1000v/mm, such as the resistivity of 1000v/mm, 1200v/mm, 1500v/mm, 1800v/mm, 2000v/mm and other different resistivities. The material of the insulating and thermally conductive adhesive layer 10 can be thermally conductive silicone grease that changes phase with temperature, but the phase transition temperature of the thermally conductive silicone grease from liquid to solid is not less than 45°C.
继续参考图2,绝缘导热胶层10的覆盖区在覆盖总线及至少两个分支线(参考图1中的对应描述)时,绝缘导热胶层挤压出与总线及至少两个分支线对应的导线槽。其中,容纳槽11与导线槽连通,导线槽用于容纳芯片连接的管脚连接的通信导线,如接收管脚、发 射管脚或其他功能的管脚连接的通信导线。在本申请实施例提供的屏蔽组件并不具体限定导线槽的个数,导线槽具体个数可根据芯片连接的管脚对应,如芯片连接的管脚的个数为两个、四个、五个等不同个数时,对应的导线槽的个数也为两个、四个、五个等相应的个数。Continuing to refer to FIG. 2, when the coverage area of the insulating and thermally conductive adhesive layer 10 covers the bus and at least two branch lines (refer to the corresponding description in FIG. 1), the insulating and thermally conductive adhesive layer is extruded to correspond to the bus and the at least two branch lines. Wire trough. Wherein, the receiving slot 11 is connected to a wire slot, and the wire slot is used to accommodate communication wires connected to pins connected to the chip, such as communication wires connected to receiving pins, transmitting pins, or pins with other functions. The shielding component provided in the embodiment of the present application does not specifically limit the number of wire slots. The specific number of wire slots can correspond to the pins connected to the chip, for example, the number of pins connected to the chip is two, four, or five. When the number is different, the number of corresponding wire guides is also the corresponding number of two, four, five, etc.
继续参考图2,以其中三个导线槽为例,为方面描述将三个导线槽分别命名为第一导线槽12b、第二导线槽12a及第三导线槽12c。第一导线槽12b、第二导线槽12a及第三导线槽12c位于容纳槽11的同一侧,并延伸到第一侧边。第一导线槽12b位于三个导线槽的中间位置,第二导线槽12a及第三导线槽12c分列在第一导线槽12b的两侧。第一导线槽12b为直线型导线槽,第二导线槽12a及第三导线槽12c为弧形的导线槽,第二导线槽12a及第二导线槽12a连接避让槽33(设置在壳体结构上用于避让通信导线的结构)的端部远离第一导线槽12b,从而增大第一导线槽12b与第二导线槽12a及第三导线槽12c之间的间隔距离,降低了三个导线槽内容纳的管脚连接的通信导线之间的串扰。本申请实施例中对导线槽的设置方式不仅限于图2中所示的方式,还可以采用其他的方式实现增大导线槽之间的间隔距离,如导线槽位于容纳槽11的不同侧壁,或者导线槽延伸到绝缘导热胶层10的不同侧面,均可改善导线槽之间的间隔距离。Continuing to refer to FIG. 2, taking three wire grooves as an example, the three wire grooves are named as the first wire groove 12 b, the second wire groove 12 a, and the third wire groove 12 c for the description. The first wire groove 12b, the second wire groove 12a, and the third wire groove 12c are located on the same side of the receiving groove 11 and extend to the first side. The first wire groove 12b is located in the middle of the three wire grooves, and the second wire groove 12a and the third wire groove 12c are arranged on both sides of the first wire groove 12b. The first wire groove 12b is a straight wire groove, the second wire groove 12a and the third wire groove 12c are arc-shaped wire grooves, and the second wire groove 12a and the second wire groove 12a are connected to the avoidance groove 33 (set in the housing structure). The upper part of the structure used to avoid the communication wire) is far away from the first wire groove 12b, thereby increasing the separation distance between the first wire groove 12b and the second wire groove 12a and the third wire groove 12c, and reduces the three wires Crosstalk between the communication wires connected to the pins contained in the slot. The arrangement of the wire grooves in the embodiment of the present application is not limited to the way shown in FIG. 2, and other ways can also be used to increase the separation distance between the wire grooves, for example, the wire grooves are located on different side walls of the receiving groove 11, Or the wire grooves extend to different sides of the insulating and thermally conductive adhesive layer 10 to improve the separation distance between the wire grooves.
继续参考图2,覆盖区内预留有一些区域用于涂导电胶层,由于预留的一些区域与导电胶层叠,因此在图2中并未标示,预留的一些区域的形状可以参考下文中关于导电胶形状的描述。导电胶层可以在屏蔽组件与基板连接时在粘接到屏蔽组件上。如图2中所示,导电胶层设置在绝缘导热胶层10设置容纳槽11的一面,并与导线槽间隔排列。在图2中,三个导线槽与四个导电胶层交替排列,任意相邻的两个导线槽之间通过一个导电胶层隔离;为方便描述,将四个导电胶层分别命名为第一导电胶层20d、第二导电胶层20c、第三导电胶层20b及第四导电胶层20a。第二导线槽12a的两侧分别设置有第一导电胶层20d及第二导电胶层20c,第一导电胶层20d为T形导电胶层,第一导电胶层20d的竖直部沿第二侧边设置,第一导电胶层20d的水平部朝容纳槽11延伸;第二导电胶层20c为L形导电胶层,第二导电胶层20c的水平部沿第一侧边设置,第二导电胶层20c的竖直部位于第一导线槽12b的一侧并沿第一导线槽12b的长度方向延伸,第二导线槽12a位于第一导电胶层20d与第二导电胶层20c围成的矩形空间内。第一导线槽12b两侧分别设置有第二导电胶层20c及第三导电胶层20b,第三导电胶层20b与第二导电胶层20c沿第一导线槽12b的轴线对称设置,第三导电胶层20b的竖直部位于第一导线槽12b的一侧并沿第一导线槽12b的长度方向延伸,第三导电胶层20b的水平部沿第一侧边设置;第一导线槽12b位于第二导电胶层20c与第三导电胶层20b的竖直部围成的空间内。第三导线槽12c的两侧分别设置有第三导电胶层20b及第四导电胶层20a,第四导电胶层20a与第一导电胶层20d沿第一导线槽12b的轴线对称设置。第四导电胶层20a的水平部分沿第一表面的第三侧边设置,第四导电胶层20a的竖直部分朝向容纳槽11延伸,第三导线槽12c位于第三导电胶层20b与第四导电胶层20a围成的矩形空间内。由中可以看出,任意相邻的导线槽之间通过一个导电胶层隔离开,且每个导线槽的两侧分别贴附了导电胶层。在具体设置上述第一导电胶层20d、第二导电胶层20c、第三导电胶层20b及第四导电胶层20a时,绝缘导热胶层10设置有与每个导电胶层配合的凹槽,凹槽的形状与对应的导电胶层的形状相近似。在导电胶层穿过绝缘导热胶层10贴合在吸波屏蔽结构30上。在屏蔽组件装配在基板上时,导电胶层与基板上的地连接,从而实现对通信导线的电隔离,避免相邻的通信导线之间的 串扰。Continuing to refer to Figure 2, there are some areas reserved for coating the conductive adhesive layer in the coverage area. Since some of the reserved areas are laminated with the conductive adhesive, they are not marked in Figure 2. The shape of some reserved areas can be referred to below The description of the shape of the conductive adhesive in the text. The conductive adhesive layer can be adhered to the shielding component when the shielding component is connected to the substrate. As shown in FIG. 2, the conductive adhesive layer is arranged on the side of the insulating and thermally conductive adhesive layer 10 where the receiving groove 11 is arranged, and is arranged at intervals from the wire groove. In Figure 2, three wire grooves and four conductive adhesive layers are arranged alternately, and any two adjacent wire grooves are separated by a conductive adhesive layer; for the convenience of description, the four conductive adhesive layers are named the first The conductive adhesive layer 20d, the second conductive adhesive layer 20c, the third conductive adhesive layer 20b, and the fourth conductive adhesive layer 20a. A first conductive adhesive layer 20d and a second conductive adhesive layer 20c are respectively provided on both sides of the second wire groove 12a. The first conductive adhesive layer 20d is a T-shaped conductive adhesive layer, and the vertical portion of the first conductive adhesive layer 20d is along the first conductive adhesive layer 20d. The horizontal part of the first conductive adhesive layer 20d extends toward the receiving groove 11; the second conductive adhesive layer 20c is an L-shaped conductive adhesive layer, and the horizontal part of the second conductive adhesive layer 20c is arranged along the first side. The vertical portion of the second conductive adhesive layer 20c is located on one side of the first conductive adhesive layer 12b and extends along the length of the first conductive adhesive layer 12b, and the second conductive adhesive layer 12a is located around the first conductive adhesive layer 20d and the second conductive adhesive layer 20c. Into a rectangular space. A second conductive adhesive layer 20c and a third conductive adhesive layer 20b are respectively provided on both sides of the first wire groove 12b. The third conductive adhesive layer 20b and the second conductive adhesive layer 20c are symmetrically arranged along the axis of the first wire groove 12b. The vertical portion of the conductive adhesive layer 20b is located on one side of the first wire groove 12b and extends along the length of the first wire groove 12b, and the horizontal portion of the third conductive adhesive layer 20b is arranged along the first side; the first wire groove 12b It is located in the space enclosed by the vertical portions of the second conductive adhesive layer 20c and the third conductive adhesive layer 20b. A third conductive adhesive layer 20b and a fourth conductive adhesive layer 20a are respectively provided on both sides of the third wire groove 12c, and the fourth conductive adhesive layer 20a and the first conductive adhesive layer 20d are symmetrically arranged along the axis of the first wire groove 12b. The horizontal portion of the fourth conductive adhesive layer 20a is arranged along the third side of the first surface, the vertical portion of the fourth conductive adhesive layer 20a extends toward the receiving groove 11, and the third wire groove 12c is located between the third conductive adhesive layer 20b and the third conductive adhesive layer 20b. In the rectangular space enclosed by the four conductive adhesive layers 20a. It can be seen from this that any adjacent wire grooves are separated by a conductive adhesive layer, and the conductive adhesive layer is attached to both sides of each wire groove. When the first conductive adhesive layer 20d, the second conductive adhesive layer 20c, the third conductive adhesive layer 20b, and the fourth conductive adhesive layer 20a are specifically arranged, the insulating and thermally conductive adhesive layer 10 is provided with a groove matching each conductive adhesive layer , The shape of the groove is similar to the shape of the corresponding conductive adhesive layer. The conductive adhesive layer passes through the insulating and thermally conductive adhesive layer 10 and is attached to the wave-absorbing and shielding structure 30. When the shielding component is assembled on the substrate, the conductive adhesive layer is connected to the ground on the substrate, thereby achieving electrical isolation of the communication wires and avoiding crosstalk between adjacent communication wires.
此外,导电胶层与吸波屏蔽结构配合将屏蔽组件内覆盖的部件(芯片及通信导线)与屏蔽组件外的器件(如图1中的天线)电磁隔离。如图2中所示,每个导电胶层(第一导电胶层20d、第二导电胶层20c、第三导电胶层20b及第四导电胶层20a)具有沿吸波屏蔽结构边沿延伸的结构,且该部分结构至少环绕部分绝缘导热胶10层设置,从而将芯片及通信导线与其连接的天线隔离开(参考图1中的射频天线A区域及A区域外的结构),改善了芯片及通信导线的屏蔽效果。In addition, the conductive adhesive layer cooperates with the wave-absorbing shielding structure to electromagnetically isolate the components (chips and communication wires) covered in the shielding assembly from the components outside the shielding assembly (such as the antenna in FIG. 1). As shown in FIG. 2, each conductive adhesive layer (the first conductive adhesive layer 20d, the second conductive adhesive layer 20c, the third conductive adhesive layer 20b, and the fourth conductive adhesive layer 20a) has an edge extending along the edge of the wave-absorbing shielding structure. Structure, and this part of the structure is arranged around at least part of the 10 layers of insulating and thermally conductive glue, thereby isolating the chip and the communication wire from the antenna connected to it (refer to the structure of the radio frequency antenna A and A in Figure 1), improving the chip and The shielding effect of communication wires.
继续参考图2,本申请实施例提供的导电胶层除用于对管脚连接的通信导线隔离外,还用于与芯片所在的基板连接。在屏蔽组件与芯片配合时,屏蔽组件通过导电胶层与基板粘接连接,由图2可以看出,本申请实施例提供的导电胶层位于第一表面的三个侧边,在与基板粘接时,可以牢固的粘接在基板上,保证了与基板连接时的可靠性。Continuing to refer to FIG. 2, the conductive adhesive layer provided by the embodiment of the present application is not only used to isolate the communication wires connected to the pins, but also used to connect to the substrate where the chip is located. When the shielding component is matched with the chip, the shielding component is adhesively connected to the substrate through the conductive adhesive layer. It can be seen from FIG. 2 that the conductive adhesive layer provided by the embodiment of the present application is located on the three sides of the first surface and is bonded to the substrate. When connecting, it can be firmly bonded to the substrate to ensure the reliability of the connection with the substrate.
应当理解的是,本申请实施例提供的是本申请实施例提供的导热胶层的结构形状不仅限于上述图2中所示的形状,还可以根据对通信导线的屏蔽以及屏蔽组件与基板的粘接效果选择不同形状的导电胶层。示例性的,任意两个导线槽之间可以设置两个导电胶层进行电磁隔离,同时增强与基板的粘接效果。It should be understood that what the embodiments of this application provide is that the structural shape of the thermally conductive adhesive layer provided in the embodiments of this application is not limited to the shape shown in Figure 2 above, and can also be based on the shielding of the communication wires and the adhesion of the shielding component to the substrate. Choose conductive adhesive layers of different shapes for the connection effect. Exemplarily, two conductive adhesive layers may be arranged between any two wire grooves for electromagnetic isolation, and at the same time, the bonding effect with the substrate is enhanced.
一并参考图3,图3示出了屏蔽组件祛除掉部分绝缘导热胶层10的结构示意图。在图3所示的屏蔽组件包括吸波屏蔽结构30,吸波屏蔽结构30为一个壳体结构,其中间为用于容纳绝缘导热胶层的腔体,在使用时,绝缘导热胶层填充在中间的腔体内形成如图2所示的结构。一并参考图2及图3可以看出,吸波屏蔽结构30环绕容纳槽11设置。吸波屏蔽结构30可以采用不同的材料制备而成,只需要能够吸波或者反射波即可,如吸波屏蔽结构30采用吸波树脂。继续参考图3,吸波屏蔽结构30朝向容纳槽11的一面设置有多个凸起,多个凸起呈螺旋状排列在所述吸波屏蔽结构30朝向所述容纳槽11的一面。Referring to FIG. 3 together, FIG. 3 shows a schematic diagram of the structure of the shielding assembly removing part of the insulating and thermally conductive adhesive layer 10. The shielding assembly shown in FIG. 3 includes a wave-absorbing shielding structure 30. The wave-absorbing shielding structure 30 is a shell structure with a cavity in the middle for accommodating the insulating and thermally conductive adhesive layer. When in use, the insulating and thermally conductive adhesive layer is filled in The structure shown in Figure 2 is formed in the middle cavity. 2 and 3 together, it can be seen that the wave-absorbing shielding structure 30 is arranged around the receiving groove 11. The wave absorbing and shielding structure 30 can be made of different materials, and only need to be capable of absorbing or reflecting waves. For example, the wave absorbing and shielding structure 30 uses a wave absorbing resin. Continuing to refer to FIG. 3, the side of the wave absorbing shielding structure 30 facing the receiving groove 11 is provided with a plurality of protrusions, and the multiple protrusions are arranged in a spiral shape on the side of the wave absorbing shielding structure 30 facing the receiving groove 11.
一并参考图4,图4中示出了吸波屏蔽结构30的部分切面图。由图4中可以看出,每个凸起结构33的凸起结构33方向朝向容纳槽11的一侧。继续参考图4,多个凸起结构33间隔排列,形成类似城垛的结构。每个凸起结构33上的侧面为反射面32或吸波面31,且反射面32及吸波面31沿交替排列。如图4中所示,反射面32及吸波面31为相对容纳槽11向外倾斜的面,其中,反射面32与容纳槽11的轴线的夹角不大于10°,示例性的,夹角为2°、5°、8°、10°等。吸波面31与容纳槽11的轴线的夹角不大于60°,示例性的,夹角为20°、30°、40°、50°、60°等。在实现对芯片屏蔽时,通过凸起结构33的反射面32反射电磁波、吸收面吸收电磁波实现对芯片的屏蔽。一并参考图5,图5示出了绝缘导热胶层10从吸波屏蔽结构30中取出后的结构示意图。由图5可以看出,在吸波屏蔽结构30中具有多个凸起结构时,对应的绝缘导热胶层10具有与凸起结构配合的凹陷结构13。Refer also to FIG. 4, which shows a partial cross-sectional view of the wave-absorbing shield structure 30. It can be seen from FIG. 4 that the direction of the convex structure 33 of each convex structure 33 faces one side of the receiving groove 11. Continuing to refer to FIG. 4, a plurality of protruding structures 33 are arranged at intervals to form a structure similar to a battlement. The side surface on each convex structure 33 is a reflective surface 32 or a wave absorbing surface 31, and the reflective surface 32 and the wave absorbing surface 31 are alternately arranged. As shown in FIG. 4, the reflecting surface 32 and the wave absorbing surface 31 are surfaces inclined outwardly relative to the receiving groove 11, wherein the included angle between the reflecting surface 32 and the axis of the receiving groove 11 is not greater than 10°, for example, the included angle It is 2°, 5°, 8°, 10°, etc. The included angle between the wave-absorbing surface 31 and the axis of the containing groove 11 is not greater than 60°, and exemplary, the included angle is 20°, 30°, 40°, 50°, 60°, and so on. When the chip is shielded, the electromagnetic wave is reflected by the reflective surface 32 of the protrusion structure 33, and the electromagnetic wave is absorbed by the absorption surface to achieve the shielding of the chip. Referring to FIG. 5 together, FIG. 5 shows a schematic structural diagram of the insulating and thermally conductive adhesive layer 10 after being taken out from the wave-absorbing shielding structure 30. It can be seen from FIG. 5 that when there are multiple convex structures in the wave-absorbing shielding structure 30, the corresponding insulating and thermally conductive adhesive layer 10 has a concave structure 13 that matches the convex structure.
应当理解的是,本申请实施例通的吸波屏蔽结构30并不仅限于图4所示的结构,还可以采用其他的结构,示例性的,吸波屏蔽结构30仅包含反射面32,反射面32一一对应设置在凸起结构;吸波屏蔽结构30仅包含吸波面31,吸波面31一一对应设置在凸起结构;吸波屏蔽结构30包括反射面32及吸波面31,吸波面31设置在部分凸起结构,反射面32设置在另一部分凸起结构,如多个反射面32及多个吸波面31之间交替排布,如图4中所示的一对一的交替排列,或者两个反射面32与两个吸波面31交替排列,两个以上的反射面32与两个以上的吸波面31交替排列等不同的方式。It should be understood that the wave absorbing and shielding structure 30 in the embodiments of the present application is not limited to the structure shown in FIG. 4, and other structures may also be used. For example, the wave absorbing and shielding structure 30 only includes a reflective surface 32. 32 are arranged on the convex structure in a one-to-one correspondence; the absorbing and shielding structure 30 only includes the absorbing surface 31, and the absorbing surface 31 is arranged on the convex structure in one-to-one correspondence; the absorbing and shielding structure 30 includes a reflecting surface 32 and an absorbing surface 31, and the absorbing surface 31 It is arranged in a part of the raised structure, and the reflecting surface 32 is arranged in another part of the raised structure, such as a plurality of reflecting surfaces 32 and a plurality of wave absorbing surfaces 31 alternately arranged, as shown in Fig. 4 in a one-to-one alternate arrangement, Or two reflective surfaces 32 and two wave-absorbing surfaces 31 are alternately arranged, and two or more reflective surfaces 32 and two or more wave-absorbing surfaces 31 are alternately arranged in different ways.
上述反射面32、吸波面31或者吸波反射面设置在凸起结构仅仅为一个示例,在本申请实施例提供的吸波屏蔽结构30还可通过其他结构承载反射面32及吸波面31,如在吸波屏蔽结构30形成一倾斜面,反射面32、吸波面31或者吸波反射面设置在斜面,或者在吸波屏蔽结构30形成不连续的倾斜面作为反射面32或吸波面31,也可以实现对电磁波的吸收或者反射的效果。因此在本申请实施例中,只需要吸波屏蔽结构30朝向容纳槽11的一侧设置有多个用于反射电磁波的反射面32,或吸波屏蔽结构30靠近容纳槽11设置面的一侧设置有多个用于反射和吸收电磁波的吸波面31,或吸波屏蔽结构30靠近容纳槽11设置面的一侧设置有多个用于反射电磁波的反射面32及多个用于反射和吸收电磁波的吸波面31即可实现对芯片的屏蔽,对于吸波面31及反射面32的具体承载结构在本申请中不做具体限定。The above-mentioned reflecting surface 32, wave absorbing surface 31 or wave absorbing reflecting surface disposed on the convex structure is only an example. The wave absorbing shielding structure 30 provided in the embodiment of the present application can also carry the reflecting surface 32 and the wave absorbing surface 31 through other structures, such as An inclined surface is formed in the wave-absorbing and shielding structure 30, and the reflecting surface 32, the wave-absorbing surface 31 or the wave-absorbing and reflecting surface are arranged on the inclined surface, or a discontinuous inclined surface is formed in the wave-absorbing and shielding structure 30 as the reflecting surface 32 or the wave-absorbing surface 31. It can achieve the effect of absorption or reflection of electromagnetic waves. Therefore, in the embodiment of the present application, only the side of the absorbing and shielding structure 30 facing the receiving groove 11 is provided with a plurality of reflecting surfaces 32 for reflecting electromagnetic waves, or the side of the absorbing and shielding structure 30 close to the setting surface of the receiving groove 11 A plurality of absorbing surfaces 31 for reflecting and absorbing electromagnetic waves are provided, or a side of the absorbing shielding structure 30 close to the installation surface of the containing groove 11 is provided with a plurality of reflecting surfaces 32 for reflecting electromagnetic waves and a plurality of reflecting surfaces 32 for reflecting and absorbing electromagnetic waves. The electromagnetic wave absorbing surface 31 can realize the shielding of the chip, and the specific bearing structure of the absorbing surface 31 and the reflecting surface 32 is not specifically limited in this application.
如图6所示,图6示出了本申请实施例提供的屏蔽组件,在图6所示的屏蔽组件中包含图2及图3中所示的吸波屏蔽结构30以及绝缘导热胶层10。图6与图2中所示的屏蔽组件的区别在于图6中的屏蔽组件设置了一层散热器件40a,散热器件40a设置在吸波屏蔽结构30背离容纳槽的一面。散热器件40a与吸波屏蔽结构30导热连接,芯片传递到绝缘导热胶层10的热量通过吸波屏蔽结构30传递到散热器件40a散发出去,散热器件40a可以采用铜、铝、铁、不锈钢等导热系数较高的金属制备而成。继续参考图6,在图6中所示的散热器件40a设置了多个散热凸起41,多个散热凸起41在散热器件40a阵列排列,散热凸起41为中空结构,通过冲压或者压铸在散热器件40a的一面形凸起,另一面形成凹陷结构。绝缘导热胶层10与散热器件40a配合的一面对应每个凹陷结构形成有凸起34a。As shown in FIG. 6, FIG. 6 shows a shielding assembly provided by an embodiment of the present application. The shielding assembly shown in FIG. 6 includes the wave-absorbing shielding structure 30 shown in FIGS. 2 and 3 and the insulating and thermally conductive adhesive layer 10 . The difference between the shielding assembly shown in FIG. 6 and FIG. 2 is that the shielding assembly in FIG. 6 is provided with a layer of radiator element 40a, and the radiator element 40a is provided on the side of the wave-absorbing shielding structure 30 away from the receiving groove. The heat sink 40a is thermally connected to the wave-absorbing shielding structure 30, and the heat transferred from the chip to the insulating and thermally conductive adhesive layer 10 is transmitted to the heat sink 40a through the wave-absorbing shielding structure 30 to be dissipated. The heat sink 40a can be made of copper, aluminum, iron, stainless steel, etc. Made of metals with higher coefficients. Continuing to refer to FIG. 6, the heat sink 40a shown in FIG. 6 is provided with a plurality of heat dissipation protrusions 41, and the plurality of heat dissipation protrusions 41 are arranged in an array on the heat sink 40a. The heat dissipation protrusions 41 are hollow structures, which are formed by stamping or die-casting. One surface of the heat sink 40a is convex, and the other surface is concave. A projection 34a is formed on the mating surface of the insulating and thermally conductive adhesive layer 10 and the heat sink 40a corresponding to each recessed structure.
继续参考图6,在散热器件40a镶嵌在吸波屏蔽结构30时,散热器件40a直接粘接在吸波屏蔽结构30,散热器件40a距离吸波屏蔽结构30的边沿的距离不小于0.8mm,如0.8mm、0.9mm、1mm等不同的距离,以提高散热器件40a与吸波屏蔽结构30连接的可靠性。吸波屏蔽结构30的凸起34a插入到散热器件40a的凹陷结构内,并与凹陷结构贴合,以增大吸波屏蔽结构30与散热器件40a的接触面积,进而增大散热面积。由上述描述可以看出,散热器件40a通过设置散热凸起41既可以增大散热器件40a的散热面积,同时也增大了散热器件40a与吸波屏蔽结构30的接触面积,进而提高了散热效果。散热器件40a除作为屏蔽组件的散热结构外,还可作为屏蔽结构,由图6可以看出,散热器件40a在设置在吸波屏蔽结构30时,覆盖容纳槽11,而金属本身具有反射电磁波的效果,因此设置的散热器件40a也可以达到对芯片的屏蔽效果,改善芯片的工作环境。Continuing to refer to FIG. 6, when the heat sink 40a is embedded in the wave absorbing shield structure 30, the heat sink 40a is directly bonded to the wave absorbing shield structure 30, and the distance between the heat sink 40a and the edge of the wave absorbing shield structure 30 is not less than 0.8 mm, such as Different distances such as 0.8mm, 0.9mm, 1mm, etc., are used to improve the reliability of the connection between the heat sink 40a and the wave-absorbing shielding structure 30. The protrusion 34a of the wave-absorbing shielding structure 30 is inserted into the recessed structure of the heat sink 40a and is attached to the recessed structure to increase the contact area between the wave-absorbing shielding structure 30 and the heat sink 40a, thereby increasing the heat dissipation area. It can be seen from the above description that the heat sink 40a can increase the heat dissipation area of the heat sink 40a by providing the heat dissipation protrusion 41, and at the same time increase the contact area between the heat sink 40a and the wave-absorbing shielding structure 30, thereby improving the heat dissipation effect. . In addition to being used as the heat dissipation structure of the shielding component, the heat sink 40a can also be used as a shielding structure. It can be seen from FIG. 6 that when the heat sink 40a is disposed in the wave-absorbing shielding structure 30, it covers the receiving groove 11, and the metal itself has the ability to reflect electromagnetic waves. Therefore, the heat sink 40a provided can also achieve a shielding effect on the chip and improve the working environment of the chip.
如图7所示,在图7所示的屏蔽组件中包含图2及图3中所示的吸波屏蔽结构30以及绝缘导热胶层10。图7与图6中所示的屏蔽组件的区别在于图7中的散热器件40b的结构形式与图6中所示的散热器件40b不同。如图7中所示,散热器件40b设置在吸波屏蔽结构30背离容纳槽11的一面,并与吸波屏蔽结构30导热连接,具体可参考图6中的相关描述。在图7中所示的散热器件40b为肋筋形结构42,散热器件40b具有多个横截面为梯形的折弯结构组成,吸波屏蔽结构30对应设置了与散热器件40b配合肋筋形结构34b。在装配时,散热器件40b镶嵌在吸波屏蔽结构30,并且散热器件40b的肋筋形结构42与散热器件40b对应的肋筋形结构34b(凹槽及凸起结构)一一对应配合,以增大吸波屏蔽结构30与散热器件40b的接触面积,进而增大散热面积。图7中的散热器件40b也覆盖容纳槽11,而金属本身具有反射电磁波的效果,因此设置的散热器件40b也可以达到对芯片的屏蔽效果,改善芯片的工作环境。As shown in FIG. 7, the shielding assembly shown in FIG. 7 includes the wave-absorbing shielding structure 30 and the insulating and thermally conductive adhesive layer 10 shown in FIGS. 2 and 3. The difference between the shielding assembly shown in FIG. 7 and FIG. 6 is that the structure of the heat sink device 40 b in FIG. 7 is different from that of the heat sink device 40 b shown in FIG. 6. As shown in FIG. 7, the heat sink 40b is arranged on the side of the wave-absorbing shielding structure 30 away from the receiving groove 11 and is thermally connected to the wave-absorbing shielding structure 30. For details, please refer to the related description in FIG. 6. The radiator element 40b shown in FIG. 7 is a rib-shaped structure 42. The radiator element 40b is composed of a plurality of bent structures with a trapezoidal cross section. The wave-absorbing and shielding structure 30 is provided with a rib-shaped structure corresponding to the radiator element 40b. 34b. During assembly, the radiator element 40b is embedded in the wave-absorbing shielding structure 30, and the rib-shaped structure 42 of the radiator element 40b is matched with the rib-shaped structure 34b (groove and protrusion structure) corresponding to the radiator element 40b in a one-to-one correspondence. The contact area between the wave-absorbing shielding structure 30 and the heat sink 40b is increased, thereby increasing the heat dissipation area. The heat sink 40b in FIG. 7 also covers the receiving groove 11, and the metal itself has the effect of reflecting electromagnetic waves. Therefore, the heat sink 40b provided can also achieve the shielding effect of the chip and improve the working environment of the chip.
如图8所示,在图8所示的屏蔽组件中包含图2及图3中所示的吸波屏蔽结构30以及吸波屏蔽结构30。图8与图6中所示的屏蔽组件的区别在于图8中的散热器件40c的结构形式与图6中所示的散热器件40c不同。如图8中所示,散热器件40c设置在吸波屏蔽结构30背离容纳槽11的一面,并与吸波屏蔽结构30导热连接,具体可参考图6中的相关描述。在图8中所示的散热器件40c为波浪形结构43,散热器件40c具有多个横截面为梯形的折弯结构组成,吸波屏蔽结构30对应设置了与散热器件40c配合波浪形结构34c(凹槽以及凸起结构)。在装配时,散热器件40c镶嵌在吸波屏蔽结构30,并且散热器件40c的波浪形结构43与散热器件40c对应的波浪形结构34c一一对应配合,以增大吸波屏蔽结构30与散热器件40c的接触面积,进而增大散热面积。图8中的散热器件40c也覆盖吸波屏蔽结构30以及容纳槽11,而金属本身具有反射电磁波的效果,因此设置的散热器件40c也可以达到对芯片的屏蔽效果,改善芯片的工作环境。As shown in FIG. 8, the shielding assembly shown in FIG. 8 includes the wave absorbing shield structure 30 and the wave absorbing shield structure 30 shown in FIGS. 2 and 3. The difference between the shielding assembly shown in FIG. 8 and FIG. 6 is that the structure of the heat sink device 40c in FIG. 8 is different from that of the heat sink device 40c shown in FIG. 6. As shown in FIG. 8, the heat sink 40c is disposed on the side of the wave-absorbing shielding structure 30 away from the receiving groove 11 and is thermally connected to the wave-absorbing shielding structure 30. For details, please refer to the related description in FIG. 6. The radiator element 40c shown in FIG. 8 is a wave-shaped structure 43. The radiator element 40c is composed of a plurality of bent structures with a trapezoidal cross-section. The wave-absorbing and shielding structure 30 is provided with a wave-shaped structure 34c corresponding to the radiator element 40c. Groove and convex structure). When assembling, the radiator element 40c is embedded in the wave absorbing shield structure 30, and the wave-shaped structure 43 of the radiator element 40c and the wave-shaped structure 34c corresponding to the radiator element 40c are matched in one-to-one correspondence to enlarge the wave-absorbing shield structure 30 and the radiator element. The contact area of 40c increases the heat dissipation area. The heat sink 40c in FIG. 8 also covers the wave-absorbing shielding structure 30 and the receiving groove 11, and the metal itself has the effect of reflecting electromagnetic waves. Therefore, the heat sink 40c provided can also achieve the shielding effect of the chip and improve the working environment of the chip.
应当理解的是,上述图6~图8仅仅示例出了几种具体的散热器件的结构形式,在本申请实施例提供的屏蔽组件中,散热器件的结构不仅限于图6~图8的结构形式,也可以采用其他的结构形式,如散热器件采用一个矩形板,不设置其他的结构,或者散热器件设置有圆柱形凸起、三角形凸起等提高散热效果的凸起。It should be understood that the above-mentioned Figures 6 to 8 only illustrate several specific structural forms of the heat sink. In the shielding assembly provided in the embodiment of the present application, the structure of the heat sink is not limited to the structural forms of Figures 6 to 8 Other structural forms can also be adopted, for example, a rectangular plate is used for the heat sink, and no other structure is provided, or the heat sink is provided with protrusions such as cylindrical protrusions, triangular protrusions, etc., which improve the heat dissipation effect.
对于电磁波屏蔽方式主要包括屏蔽和吸收两种方式,屏蔽是在屏蔽结构件表面发生肌肤效应,将电磁能转换为热能。电磁波屏蔽的材质主要有两大类:金属材料以及吸波材料,其中金属类屏蔽结构件阻断效果最好,但是存在比较强的电磁波反射,容易出现屏蔽腔体饱和的问题。而吸波材料类结构件阻断效果较好,电磁波反射比较弱,没有屏蔽腔体饱和的问题。而在本申请实施例中,通过采用散热器件以及吸波屏蔽结构30共同来改善对芯片的屏蔽性能,提高了芯片的工作环境,同时,散热器件及吸波屏蔽结构30在设置时,也覆盖了导线槽,避免了外界电磁波影响到导线槽内的管脚,提高了整个芯片通信的效果。The electromagnetic wave shielding method mainly includes shielding and absorption. The shielding is the skin effect on the surface of the shielding structure, which converts electromagnetic energy into heat energy. There are two main types of electromagnetic wave shielding materials: metal materials and wave absorbing materials. Among them, the metal shielding structure has the best blocking effect, but there is relatively strong electromagnetic wave reflection, which is prone to the problem of saturation of the shielding cavity. However, the blocking effect of the absorbing material structure is better, the reflection of electromagnetic waves is relatively weak, and there is no problem of saturation of the shielding cavity. In the embodiment of the present application, the heat sink and the wave-absorbing shielding structure 30 are used to improve the shielding performance of the chip, and the working environment of the chip is improved. At the same time, the heat sink and the wave-absorbing shielding structure 30 also cover The wiring groove is avoided, the external electromagnetic waves are prevented from affecting the pins in the wiring groove, and the communication effect of the entire chip is improved.
如图9所示,图9示出了本申请实施例提供的通信设备的内部结构示意图。在图9所示的通信设备包括基板100,以及设置在基板100上的芯片200、天线等部件,其中芯片200与天线通过管脚及其连接的通信导线201连接。并且芯片200通过屏蔽组件300进行屏蔽。在装配时,屏蔽组件300与基板100粘接连接,具体通过导电胶层与基板100粘接连接,而芯片200位于容纳槽11中并与绝缘导热胶层10导热连接。通过环绕设置的吸波屏蔽结构通过吸收或者反射电磁波的方式实现对芯片200的屏蔽,同时通过导电胶层电磁隔离相邻的管脚(发射管脚及接收管脚)连接的通信导线201,降低通信导线之间的串扰,改善了芯片的工作效果。As shown in FIG. 9, FIG. 9 shows a schematic diagram of the internal structure of a communication device provided by an embodiment of the present application. The communication device shown in FIG. 9 includes a substrate 100, and components such as a chip 200 and an antenna disposed on the substrate 100, wherein the chip 200 and the antenna are connected through a pin and a communication wire 201 connected thereto. And the chip 200 is shielded by the shielding assembly 300. During assembly, the shielding assembly 300 is adhesively connected to the substrate 100, specifically connected to the substrate 100 through a conductive adhesive layer, and the chip 200 is located in the receiving groove 11 and thermally connected to the insulating and thermally conductive adhesive layer 10. The surrounding wave-absorbing shielding structure realizes the shielding of the chip 200 by absorbing or reflecting electromagnetic waves, and at the same time electromagnetically isolates the communication wires 201 connected to the adjacent pins (transmitting and receiving pins) by the conductive adhesive layer, reducing The crosstalk between the communication wires improves the working effect of the chip.
本申请实施例还提供了一种车载设备,如车载毫米波雷达。该车载设备包括基板,设置在所述基板上的芯片,以及上述任一项所述的屏蔽组件;其中,所述屏蔽组件与所述基板粘接连接,且所述芯片位于所述容纳槽中;所述芯片与所述绝缘导热胶层导热连接。在使用时,通过环绕设置的吸波屏蔽结构通过吸收或者反射电磁波的方式实现对芯片的屏蔽,同时通过导电胶层电磁隔离相邻的发射管脚及接收管脚连接的通信导线,降低通信导线之间的串扰,改善了芯片的工作效果。The embodiment of the application also provides a vehicle-mounted device, such as a vehicle-mounted millimeter wave radar. The vehicle-mounted equipment includes a substrate, a chip provided on the substrate, and the shielding assembly of any one of the above; wherein the shielding assembly is adhesively connected to the substrate, and the chip is located in the receiving groove ; The chip is thermally connected to the insulating and thermally conductive adhesive layer. In use, the surrounding wave-absorbing shielding structure realizes the shielding of the chip by absorbing or reflecting electromagnetic waves. At the same time, the adjacent transmitting pins and the communication wires connected to the receiving pins are electromagnetically separated by the conductive adhesive layer to reduce the communication wires. The crosstalk between the two improves the working effect of the chip.
以上,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以权利要求的保护范围为准。The above are only specific implementations of this application, but the scope of protection of this application is not limited to this. Any person skilled in the art can easily conceive of changes or substitutions within the technical scope disclosed in this application, which shall cover Within the scope of protection of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (16)

  1. 一种屏蔽组件,其特征在于,包括:吸波屏蔽结构以及绝缘导热胶层;所述吸波屏蔽结构为壳体结构,所述绝缘导热胶层填充在所述壳体结构内;还包括包裹所述绝缘导热胶层的防粘接层,所述防粘接层为弹性层;其中,A shielding assembly, characterized by comprising: a wave-absorbing shielding structure and an insulating and thermally conductive adhesive layer; the wave-absorbing and shielding structure is a shell structure, and the insulating and thermally conductive adhesive layer is filled in the shell structure; and further comprising a package The anti-adhesion layer of the insulating and thermally conductive adhesive layer, the anti-adhesion layer is an elastic layer; wherein,
    所述绝缘导热胶层具有用于覆盖芯片周边区域的覆盖区;其中,所述覆盖区内预留有一些区域,用于涂导电胶层,所述导电胶层用于隔离所述芯片连接的多个通信导线。The insulating and thermally conductive adhesive layer has a covering area for covering the peripheral area of the chip; wherein, some areas are reserved in the covering area for coating a conductive adhesive layer, and the conductive adhesive layer is used to isolate the chip connection Multiple communication wires.
  2. 根据权利要求1所述的屏蔽组件,其特征在于,所述芯片为射频芯片;所述通信导线包括与所述射频芯片连接的总线,以及与所述总线连接的至少两个分支线,每个分支线连接有天线;The shielding assembly according to claim 1, wherein the chip is a radio frequency chip; the communication wire comprises a bus connected to the radio frequency chip, and at least two branch wires connected to the bus, each Antenna is connected to the branch line;
    所述绝缘导热胶的覆盖区覆盖所述射频芯片,且所述绝缘导热胶层挤压出与所述射频芯片对应的容纳槽;The covering area of the insulating and thermally conductive adhesive covers the radio frequency chip, and the insulating and thermally conductive adhesive layer is extruded to form a receiving groove corresponding to the radio frequency chip;
    所述绝缘导热胶的覆盖区覆盖所述总线及所述至少两个分支线,且所述绝缘导热胶层挤压出与所述总线及所述至少两个分支线对应的导线槽。The covering area of the insulating and thermally conductive adhesive covers the bus and the at least two branch lines, and the insulating and thermally conductive adhesive layer extrudes a wire groove corresponding to the bus and the at least two branch lines.
  3. 根据权利要求1或2所述的屏蔽组件,其特征在于,所述壳体结构上设置有避让所述通信导线的避让槽。The shielding assembly according to claim 1 or 2, wherein the housing structure is provided with an escape groove for avoiding the communication wire.
  4. 根据权利要求1~3任一项所述的屏蔽组件,其特征在于,所述吸波屏蔽结构朝向所述覆盖区的一侧设置有多个用于反射电磁波的反射面;或,The shielding assembly according to any one of claims 1 to 3, wherein the side of the wave-absorbing shielding structure facing the coverage area is provided with a plurality of reflecting surfaces for reflecting electromagnetic waves; or,
    所述吸波屏蔽结构靠近所述覆盖区设置面的一侧设置有多个用于吸收电磁波的吸波面;A plurality of wave-absorbing surfaces for absorbing electromagnetic waves are provided on the side of the wave-absorbing shielding structure close to the setting surface of the coverage area;
    所述吸波屏蔽结构靠近所述覆盖区设置面的一侧设置有多个用于反射电磁波的反射面及多个吸收电磁波的吸波面。A plurality of reflecting surfaces for reflecting electromagnetic waves and a plurality of absorbing surfaces for absorbing electromagnetic waves are arranged on a side of the wave-absorbing shielding structure close to the covering area setting surface.
  5. 根据权利要求4所述的屏蔽组件,其特征在于,所述吸波屏蔽结构间隔设置有多个凸起结构,所述吸波面一一对应设置在所述凸起结构;或,The shielding assembly according to claim 4, wherein the wave-absorbing shielding structure is provided with a plurality of raised structures at intervals, and the wave-absorbing surfaces are arranged on the raised structures in a one-to-one correspondence; or,
    所述反射面一一对应设置在所述凸起结构;或,The reflecting surfaces are arranged on the protruding structure in a one-to-one correspondence; or,
    所述吸波面设置在部分凸起结构,所述反射面设置在另一部分凸起结构。The wave absorbing surface is arranged on a part of the convex structure, and the reflecting surface is arranged on another part of the convex structure.
  6. 根据权利要求5所述的屏蔽组件,其特征在于,所述多个凸起呈螺旋状排列在所述吸波屏蔽结构朝向所述覆盖区的一面。The shield assembly according to claim 5, wherein the plurality of protrusions are arranged in a spiral shape on a side of the wave-absorbing shielding structure facing the coverage area.
  7. 根据权利要求5或6所述的屏蔽组件,其特征在于,所述吸波屏蔽结构为吸波树脂制备而成的吸波屏蔽结构。The shielding assembly according to claim 5 or 6, wherein the wave-absorbing shielding structure is a wave-absorbing shielding structure made of a wave-absorbing resin.
  8. 根据权利要求1~7任一项所述的屏蔽组件,其特征在于,所述导电胶层至少环绕部分所述绝缘导热胶层设置。8. The shielding assembly according to any one of claims 1 to 7, wherein the conductive adhesive layer is provided around at least a part of the insulating and thermally conductive adhesive layer.
  9. 根据权利要求1~8任一项所述的屏蔽组件,其特征在于,所述屏蔽组件还包括散热器件;所述散热器件设置在所述吸波屏蔽结构背离所述覆盖区的一面。8. The shielding assembly according to any one of claims 1 to 8, wherein the shielding assembly further comprises a heat sink; the heat sink is arranged on a side of the wave-absorbing shielding structure facing away from the coverage area.
  10. 根据权利要求9所述的屏蔽组件,其特征在于,所述散热器件与所述吸波屏蔽结构导热连接。9. The shielding assembly according to claim 9, wherein the heat sink is thermally connected to the wave-absorbing shielding structure.
  11. 根据权利要求10所述的屏蔽组件,其特征在于,所述散热器件设置有多个散热凸起;或,所述散热器件为肋筋形、波浪形。The shield assembly according to claim 10, wherein the heat sink is provided with a plurality of heat dissipation protrusions; or, the heat sink is rib-shaped or wave-shaped.
  12. 根据权利要求10或11所述的屏蔽组件,其特征在于,所述散热器件镶嵌在所述 吸波屏蔽结构。The shielding assembly according to claim 10 or 11, wherein the heat sink is embedded in the wave-absorbing shielding structure.
  13. 根据权利要求12所述的屏蔽组件,其特征在于,所述散热器件距离所述吸波屏蔽结构的边沿的距离不小于0.8mm。The shielding assembly according to claim 12, wherein the distance between the heat sink and the edge of the wave-absorbing shielding structure is not less than 0.8 mm.
  14. 根据权利要求1~13任一项所述的屏蔽组件,其特征在于,所述防粘接层为有机硅薄膜层。The shielding assembly according to any one of claims 1 to 13, wherein the anti-adhesion layer is an organic silicon thin film layer.
  15. 一种通信设备,其特征在于,包括基板,设置在所述基板上的芯片,以及如权利要求1~14任一项所述的屏蔽组件;其中,A communication device, characterized by comprising a substrate, a chip arranged on the substrate, and the shielding assembly according to any one of claims 1 to 14; wherein,
    所述屏蔽组件与所述基板粘接连接,且所述芯片位于所述覆盖区中;所述芯片与所述绝缘导热胶层导热连接。The shielding component is adhesively connected to the substrate, and the chip is located in the covering area; the chip is thermally connected to the insulating and thermally conductive adhesive layer.
  16. 一种车载设备,其特征在于,包括基板,设置在所述基板上的芯片,以及如权利要求1~14任一项所述的屏蔽组件;其中,An in-vehicle device, characterized by comprising a substrate, a chip arranged on the substrate, and the shielding assembly according to any one of claims 1 to 14; wherein,
    所述屏蔽组件与所述基板粘接连接,且所述芯片位于所述覆盖区中;所述芯片与所述绝缘导热胶层导热连接。The shielding component is adhesively connected to the substrate, and the chip is located in the covering area; the chip is thermally connected to the insulating and thermally conductive adhesive layer.
PCT/CN2020/141646 2019-12-30 2020-12-30 Shielding assembly, vehicle-mounted device and communication device WO2021136432A1 (en)

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