WO2021135784A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021135784A1
WO2021135784A1 PCT/CN2020/132864 CN2020132864W WO2021135784A1 WO 2021135784 A1 WO2021135784 A1 WO 2021135784A1 CN 2020132864 W CN2020132864 W CN 2020132864W WO 2021135784 A1 WO2021135784 A1 WO 2021135784A1
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Prior art keywords
light
anode
area
emitting structure
display area
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/132864
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English (en)
French (fr)
Inventor
金玉
王恩来
李如龙
蒋际君
习王锋
张鹏辉
任腾
陆蕴雷
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Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Publication of WO2021135784A1 publication Critical patent/WO2021135784A1/zh
Priority to US17/673,497 priority Critical patent/US12256608B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers

Definitions

  • the embodiments of the present application relate to the field of display technology, for example, to a display panel and a display device.
  • the under-screen camera technology came into being, that is, the area where the photosensitive device is set in the display screen can still be used for display, and the sputtering film forming process of forming a transparent anode in the area where the photosensitive device is set will affect
  • the light-emitting characteristics of the light-emitting structure in the normal display area further affect the display effect of the normal display area of the display panel.
  • the present application provides a display panel and a display device, which optimize the light-emitting effect of the light-emitting structure in the first display area, and further optimize the display effect of the first display area of the display panel.
  • the embodiment of the present application provides a display panel, including:
  • a first display area and a second display area the first display area is arranged around at least a part of the second display area, and the second display area corresponds to a photosensitive device that collects light through the second display area;
  • a plurality of light emitting structures are located on the array substrate and arranged corresponding to the first display area and the second display area;
  • a plurality of pixel driving circuits are arranged in the array substrate, and the plurality of light emitting structures are arranged in a one-to-one correspondence with the plurality of pixel driving circuits;
  • the anode of each light-emitting structure in at least one of the light-emitting structures is correspondingly provided with an anode of each light-emitting structure adjacent to the pixel drive circuit corresponding to each light-emitting structure.
  • One side and conductive isolation structure the anode of each light-emitting structure is electrically connected to the pixel drive circuit corresponding to each light-emitting structure through the isolation structure corresponding to each light-emitting structure;
  • the isolation structure corresponding to each light-emitting structure covers the anode of each light-emitting structure in a direction perpendicular to the display panel.
  • An embodiment of the present application also provides a display device, including:
  • the display panel as described above.
  • the embodiments of the present application provide a display panel and a display device.
  • the display panel is provided with a first display area and a second display area.
  • the first display area is arranged around at least a part of the second display area, and the second display area is correspondingly provided with a photosensitive device ,
  • the photosensitive device is arranged to collect light through the second display area;
  • the display panel includes an array substrate and a plurality of light emitting structures arranged on the array substrate corresponding to the first display area and the second display area, and a plurality of pixels are arranged in the array substrate
  • a driving circuit, a plurality of pixel driving circuits and a plurality of light-emitting structures are arranged in one-to-one correspondence; in the first display area, the anode of each light-emitting structure in the at least one light-emitting structure is correspondingly provided with a location adjacent to the anode of each light-emitting structure Said each light-emitting structure corresponds to a side of
  • FIG. 1 is a schematic diagram of a top view structure of a display panel provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a display panel provided by an embodiment of the application
  • FIG. 3 is a schematic diagram of a cross-sectional structure of a display panel during the formation of anode traces according to an embodiment of the application;
  • FIG. 4 is a schematic diagram of a cross-sectional structure of a display panel before anode formation in a transparent area provided by an embodiment of the application;
  • FIG. 5 is a schematic cross-sectional structure diagram of a display device provided by an embodiment of the application.
  • a transparent anode needs to be formed on the planarization layer in this area, and the transparent anode needs to be magnetron sputtered and engraved on the entire surface of the display panel.
  • the transparent anode material is also formed on the planarization layer of the normal display area where the photosensitive device is not provided, and the sputtering film forming process to form the transparent anode will affect the surface of the planarization layer in the normal display area
  • the anode in the normal display area is subsequently deposited on the planarization layer, the anode in the normal display area will migrate, which affects the light-emitting characteristics of the light-emitting structure in the normal display area, and then affects the normal display area of the display panel. display effect.
  • the embodiment of the present application is arranged in the first display area, and the anode of each light-emitting structure in at least one light-emitting structure is correspondingly provided with one of the pixel driving circuits corresponding to each light-emitting structure adjacent to the anode of each light-emitting structure.
  • the anode of each light-emitting structure is electrically connected to the pixel driving circuit corresponding to each light-emitting structure through the isolation structure corresponding to each light-emitting structure, and corresponds to the light-emitting opening area of each light-emitting structure
  • the isolation structure corresponding to each light-emitting structure covers the anode of each light-emitting structure in a direction perpendicular to the display panel, so that the light-emitting opening area corresponding to the light-emitting structure realizes the connection between the anode and the anode in the first display area through the isolation structure.
  • the effective isolation between the planarization layers avoids the production process of the anode in the second display area from causing changes in the physical and chemical properties of the planarization layer surface in the first display area, which in turn causes the position of the light-emitting opening area of the light-emitting structure and above the planarization layer
  • the anode has the problem of abnormal migration, which avoids the effect of changes in the surface physical and chemical properties of the planarization layer in the first display area on the light-emitting characteristics of the light-emitting structure in the first display area, and optimizes the light-emitting structure in the first display area
  • the luminous effect of the display panel further optimizes the display effect of the first display area of the display panel.
  • FIG. 1 is a schematic diagram of a top view structure of a display panel provided by an embodiment of the application
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a display panel provided by an embodiment of the application.
  • the display panel includes a first display area AA1 and a second display area AA2.
  • the first display area AA1 is arranged around at least a part of the second display area AA2, and the first display area AA1 is exemplarily arranged around the second display area AA2.
  • the second display area AA2 is provided, the second display area AA2 is correspondingly provided with a photosensitive device, and the photosensitive device is configured to pass through the second display area AA2 for light collection.
  • the photosensitive device may be a photosensitive device such as a camera photosensitive device or a fingerprint recognition sensor.
  • the second display area AA2 is an area corresponding to the photosensitive device. This area can not only realize the display function, but also has sufficient light transmittance to ensure the accuracy of photosensitive recognition by the photosensitive device.
  • the first display area AA1 is a normal display area in the display panel, and is used to realize the normal display of the area where no photosensitive device is provided.
  • FIG. 1 only exemplarily shows the position of the second display area AA2 in the display panel, and the embodiment of the present application does not limit the position of the second display area AA2 in the display panel.
  • the display panel includes an array substrate 1 and a plurality of light emitting structures 2 disposed on the array substrate 1 corresponding to the first display area AA1 and the second display area AA2.
  • the light emitting structure 2 may be an organic light emitting structure.
  • a plurality of pixel driving circuits 3 are provided in the array substrate 1.
  • the multiple light-emitting structures 2 and multiple pixel drive circuits 3 are arranged in a one-to-one correspondence.
  • the pixel drive circuit 3 provides driving current to the corresponding light-emitting structure 2, and the light-emitting structure 2 emits light in response to the drive current, and the display panel realizes a display function.
  • the anode 4 of each light-emitting structure 2 in at least one light-emitting structure 2 is correspondingly provided with a conductive isolation structure 5, and the isolation structure 5 corresponding to each light-emitting structure 2 is located in each of the The anode 4 of the light-emitting structure is adjacent to the side of the pixel driving circuit 3 corresponding to each light-emitting structure 2, and the anode 4 of each light-emitting structure 2 is connected to each other through the isolation structure 5 corresponding to each light-emitting structure.
  • the pixel driving circuit 3 corresponding to each light-emitting structure 2 is electrically connected.
  • the light emitting structure 2 includes an anode 4, a cathode (not shown in FIG.
  • the light-emitting functional layer is located in the light-emitting opening area a1 of the light-emitting structure 2, that is, the area where the light-emitting structure 2 actually emits light is the light-emitting opening area a1 of the light-emitting structure 2.
  • the isolation structure 5 corresponding to each light-emitting structure 2 covers the anode 4 of each light-emitting structure 2, that is, where the conductive structure is located. The area covers the area where the anode 4 is located.
  • the array substrate 1 further includes a planarization layer 8 located between the pixel driving circuit 3 and the light-emitting structure 2, and the planarization layer 8 is used to provide a relatively flat production film plane for the formation of the light-emitting structure 2.
  • the second display area AA2 corresponding to the photosensitive device can also realize the display function, and in order to realize the photosensitive function of the photosensitive device corresponding to the second display area AA2, for example, to realize the camera function or fingerprint recognition function, etc., It is necessary to ensure that the second display area AA2 has sufficient light transmittance. Therefore, a transparent electrode needs to be formed in at least part of the second display area AA2. For example, the transparent anode 4 of the second display area AA2 is formed on the planarization layer 8. .
  • the transparent anode 4 When forming the transparent anode 4 in the second display area AA2, the transparent anode 4 needs to be formed after magnetron sputtering and etching on the entire surface of the display panel, so that the planarization layer 8 in the first display area AA1
  • the above will also form the material of the transparent anode 4 in the second display area AA2, and the sputtering film forming process to form the transparent anode 4 in the second display area AA2 will affect the surface of the planarization layer 8 in the first display area AA1 Due to the physical and chemical properties of, when the anode 4 in the first display area AA1 is subsequently deposited on the planarization layer 8, the anode 4 in the first display area AA1 will have a migration phenomenon.
  • the photoresist covering the transparent anode 4 needs to be stripped.
  • the planarization layer 8 is completely immersed in the stripping liquid.
  • the planarization layer 8 itself is also a photoresist, so it is affected by the stripping liquid.
  • the physical and chemical properties of the surface of the planarization layer 8 will change, which will result in the subsequent deposition of the anode 4 in the first display area AA1 on the planarization layer 8, and the migration phenomenon of the anode 4 in the first display area AA1 will affect the first display area AA1.
  • the light emission characteristics of the light emitting structure 2 in a display area AA1 for example, the migration of the anode 4 in the first display area AA1 will cause the light emission color of the light emitting structure 2 to become yellowish, etc., thereby affecting the display effect of the first display area AA1 of the display panel.
  • the embodiment of the present application is arranged in the first display area AA1, and the anode 4 of each light emitting structure 2 in the at least one light emitting structure 2 is correspondingly provided with the anode 4 of each light emitting structure 2 Adjacent to the isolation structure 5 on the side of the corresponding pixel driving circuit 3 of each light-emitting structure 2, the anode 4 of each light-emitting structure 2 is connected to each other through the isolation structure 5 corresponding to each light-emitting structure 2
  • the pixel driving circuit 3 corresponding to each light-emitting structure 2 is electrically connected to correspond to the light-emitting opening area a1 of each light-emitting structure 2, and the isolation structure 5 corresponding to each light-emitting structure 2 covers each light-emitting structure 2 in a direction perpendicular to the display panel.
  • the anode 4 of the light-emitting structure 2 corresponds to the light-emitting opening area a1 of the light-emitting structure 2, and the isolation structure 5 realizes the effective isolation between the anode 4 and the planarization layer 8 in the first display area AA1, avoiding the second
  • the fabrication process of the anode 4 in the display area AA2 causes the surface physical and chemical properties of the planarization layer 8 in the first display area AA1 to change, which in turn causes the position of the light-emitting opening area a1 of the light-emitting structure 2, and the anode 4 above the planarization layer 8 has abnormal migration.
  • the problem is to avoid the influence of changes in the physical and chemical properties of the surface of the planarization layer 8 in the first display area AA1 on the light-emitting characteristics of the light-emitting structure 2 in the first display area AA1, and optimize the light-emitting effect of the light-emitting structure 2 in the first display area AA1. Furthermore, the display effect of the first display area AA1 of the display panel is optimized.
  • the anode 4 is electrically connected to the corresponding pixel driving circuit 3 in the via hole a2 through the corresponding isolation structure 5.
  • the isolation structure 5 Cover the corresponding anode 4 in the direction perpendicular to the display panel.
  • the array substrate 1 further includes a planarization layer 8 between the pixel driving circuit 3 and the light emitting structure 2.
  • the anode 4 is electrically connected to the isolation structure 5, and the isolation structure 5 is electrically connected to the corresponding pixel driving circuit 3 through the via hole a2 penetrating the planarization layer 8, thereby realizing light emission in the first display area AA1
  • the anode 4 of the structure 2 is electrically connected to the corresponding pixel driving circuit 3.
  • the isolation structure 5 covers the corresponding anode 4, for example, the bottom and sides of the via a2 are provided.
  • An isolation structure 5 and an anode 4 of the light emitting structure 2 corresponding to the isolation structure 5 are arranged on the walls.
  • the second display area AA2 of the display panel provided with photosensitive devices can also realize the display function, and in order to realize the photosensitive function of the photosensitive devices corresponding to the second display area AA2, it is necessary to ensure that the second display area AA2 has Sufficient light transmittance, so at least part of the second display area AA2 needs to form a transparent anode 4 and corresponding transparent traces.
  • the transparent anode 4 and transparent traces of the second display area AA2 are both forming pixel drivers. Circuit 3 is formed later.
  • the transparent anode 4 and the transparent wiring in the second display area AA2 are formed, the transparent anode 4 and the transparent wiring are formed on the entire surface of the display panel after magnetron sputtering and etching, so that the The source S or the drain D of the thin film transistor T in the pixel driving circuit 3 of a display area AA1 also forms the material of the transparent anode 4 or the material of the transparent wiring in the second display area AA2 to form a second display
  • the sputtering film forming process of the transparent anode 4 and the transparent wiring in the area AA2 will affect the surface characteristics of the source S or the drain D of the thin film transistor T in the pixel driving circuit 3 in the first display area AA1, for example, constitute the source
  • the film material of S or drain D is Ti-Al-Ti, and the sputtering film forming process of forming the transparent anode 4 and the transparent wiring in the second display area AA2 will affect the pixel driving in the first display area AA1
  • the surface roughness of the anode 4 in the via hole a2 is relatively large.
  • the anode 4 in the via hole a2 and the source S or the drain D of the thin film transistor T have a large overlap resistance, which affects the signal transmission rate.
  • it may cause the surface roughness of the anode 4 in different via a2 to be quite different, resulting in a large difference in the lap resistance between the anode 4 in different via a2 and the source S or drain D of the thin film transistor T, which affects the display The display uniformity of the panel.
  • the anode 4 with a rough surface will cause serious diffuse reflection in the via a2, which will affect the light-emitting characteristics of the light-emitting structure 2, for example, the light-emitting color of the light-emitting structure 2 is black, which in turn affects the display effect of the first display area AA1 of the display panel.
  • the embodiment of the present application is provided in the first display area AA1, the anode 4 is electrically connected to the corresponding pixel driving circuit 3 in the via hole a2 through the corresponding isolation structure 5, and the via hole a2 is isolated
  • the structure 5 covers the corresponding anode 4 in a direction perpendicular to the display panel, so that the isolation structure 5 corresponding to the aforementioned via hole a2 realizes the connection between the anode 4 in the first display area AA1 and the source of the thin film transistor T in the pixel drive circuit 3
  • the effective isolation between the S or the drain D prevents the transparent anode 4 and the transparent wiring in the second display area AA2 from causing the source of the thin film transistor T in the pixel driving circuit 3 in the first display area AA1.
  • the surface roughness of the anode 4 in the via hole a2 caused by the change in the surface characteristics of the S or the drain D is relatively large, which affects the signal transmission rate and the display uniformity of the display panel, and the problem of affecting the light-emitting characteristics of the light-emitting structure 2 is reduced.
  • the lap resistance between the anode 4 in the via a2 and the source S or the drain D of the thin film transistor T weakens the diffuse reflection phenomenon in the via a2, and optimizes the light-emitting effect of the light-emitting structure 2 in the first display area AA1. Furthermore, the display effect of the first display area AA1 of the display panel is optimized.
  • the anode 4 of the light-emitting structure 2 is electrically connected to the drain D of the thin film transistor T in the corresponding pixel drive circuit 3, and the anode 4 of the light-emitting structure 2 can also be provided with the corresponding The source S of the thin film transistor T in the pixel driving circuit 3 is electrically connected.
  • the isolation structure 5 and the anode 4 of the light emitting structure 2 in the second display area AA2 may be formed in the same layer.
  • the material of the anode 4 constituting the isolation structure 5 and the light emitting structure 2 in the second display area AA2 includes a transparent material.
  • the transparent material includes indium tin oxide
  • the material constituting the anode 4 of the light-emitting structure 2 in the second display area AA2 includes a transparent material to increase the light transmittance of the second display area AA2 of the display panel and improve the display panel's The photosensitive sensitivity of the photosensitive device set in the second display area AA2.
  • the anode 4 of the light-emitting structure 2 is formed on the side of the planarization layer 8 in the array substrate 1 away from the pixel driving circuit 3, and the isolation structure 5 and the second display area in the first display area AA1 are arranged
  • the anode 4 of the light-emitting structure 2 in AA2 is fabricated in the same layer, that is, the isolation structure 5 in the first display area AA1 is also formed on the side of the planarization layer 8 in the array substrate 1 far from the pixel driving circuit 3, so that the first display area
  • the isolation structure 5 in AA1 covers the light-emitting opening area a1 of the corresponding light-emitting structure 2 and the area where the via hole a2 of the source S or the drain D of the thin film transistor T is exposed in the first display area AA1, and then in the first display area
  • the anode 4 of the light-emitting structure 2 is formed on the isolation structure 5 of AA1, and the anode 4 of the light-emitting structure 2 is arranged
  • a change in the physical and chemical properties of the surface of the planarization layer 8 in the display area AA1 affects the luminescence characteristics of the light emitting structure 2 in the first display area AA1, reducing the anode 4 in the via a2 and the source S or drain of the thin film transistor T
  • the lap resistance of the pole D weakens the diffuse reflection phenomenon in the via hole a2, optimizes the light-emitting effect of the light-emitting structure 2 in the first display area AA1, and simplifies the manufacturing process of the display panel.
  • the second display area AA2 includes a transparent area B1 and a transition area B2.
  • the first display area AA1 may be arranged around the second display area AA2
  • the transition area B2 in the second display area AA2 is arranged around the transparent area B1 in the second display area AA2, and both the transparent area B1 and the transition area B2 are arranged.
  • a light-emitting structure 2 that is, the transparent area B1 and the transition area B2 of the second display area AA2 can realize the display function, and the pixel driving circuit 3 of the light-emitting structure 2 corresponding to the transparent area B1 and the pixel driving of the light-emitting structure 2 corresponding to the transition area B2
  • the circuits 3 are all arranged in the transition area B2, and the anode 4 of the light-emitting structure 2 in the transparent area B1 is electrically connected to the corresponding pixel driving circuit 3 in the transition area B2 through the anode wiring 6.
  • the photosensitive device is arranged corresponding to the transparent area B1 of the second display area AA2 of the display panel.
  • the transparent area B1 of the second display area AA2 is not provided with a light-shielding pixel drive circuit 3, and the light transmittance is higher.
  • the photosensitive device is arranged corresponding to the second display area
  • the setting of the transparent area B1 of AA2 is beneficial to improve the photosensitive sensitivity of the photosensitive device.
  • the pixel driving circuit 3 provided in the transition area B2 not only provides driving current to the corresponding light emitting structure 2 in the transition area B2, but also provides driving current to the corresponding light emitting structure 2 in the transparent area B1, that is, the pixel corresponding to the light emitting structure 2 in the transition area B2
  • the driving circuit 3 and the pixel driving circuit 3 corresponding to the light-emitting structure 2 in the transparent area B1 are both set in the transition area B2, so an anode wire 6 needs to be provided.
  • the anode wire 6 is used to realize the anode 4 of the light-emitting structure 2 in the transparent area B1 and the anode 4 in the light-emitting structure 2 in the transparent area B1.
  • the pixel driving circuit 3 in the transition area B2 is electrically connected, and the anode 4 of the transparent area B1 receives the driving current provided by the corresponding pixel driving circuit 3 in the transition area B2 to realize the display function of the transparent area B1.
  • a lap structure 7 is provided in the transparent region B1, and the lap structure 7 is connected to the source and drain of the thin film transistor T in the pixel driving circuit 3 (that is, the source S and the drain of the thin film transistor).
  • Pole D Made in the same layer, the anode 4 in the transparent area B1 is electrically connected to the overlap structure 7 through the via a3, and the anode trace 6 overlaps the overlap structure 7 and is routed to the transition area B2 and the corresponding pixel driver Circuit 3 is electrically connected.
  • the number of light emitting structures 2 in the first display area AA1 and the second display area AA2 of the display panel is increasing.
  • the number of light emitting structures 2 in the transparent area B1 of the second display area AA2 is increasing.
  • the number is also increasing, that is, the arrangement of anodes 4 in the transparent area B1 is getting closer and closer, and the anodes 4 of the light-emitting structure 2 in the transparent area B1 have to be electrically connected to the corresponding pixel driving circuit 3 in the transition area B2, so that The film layer where the anode 4 of the transparent area B1 is located is difficult to leave extra space for the anode 4 to be routed to the transition area B2 and the corresponding pixel drive circuit 3 is electrically connected, so the corresponding anode can be set on the remaining film layer of the transparent area B1
  • the line 6 connects the anode 4 of the transparent area B1 and the pixel driving circuit 3 corresponding to the transition area B2.
  • a lap structure 7 is provided in the second display area AA2, the anode 4 in the second display area AA2 is electrically connected to the lap structure 7 through a via a3, and the anode wire 6 is overlapped on the lap structure 7 and
  • the wiring to the transition area B2 is electrically connected to the corresponding pixel drive circuit 3, and the overlap structure 7 can be made in the same layer as the source and drain of the thin film transistor T in the pixel drive circuit 3, that is, the light emitting structure 2 in the transparent area B1
  • the anode 4 is first connected to the lap structure 7 made in the same layer as the source S and drain D of the thin film transistor T through the via a3 penetrating the planarization layer 8.
  • the anode trace 6 is lapped on the lap structure 7, That is, the anode wire 6 is electrically connected to the lap structure 7, and the anode wire 6 is routed to the transition area B2 to be electrically connected to the corresponding pixel driving circuit 3, thereby realizing the anode 4 of the transparent area B1 and the corresponding pixel of the transition area B2
  • the driving circuit 3 is electrically connected.
  • the material constituting the anode wiring 6 includes a transparent material.
  • the transparent material includes indium tin oxide
  • the anode wiring 6 is at least partially located in the transparent area B1
  • the material constituting the anode wiring 6 includes a transparent material. The light transmittance of the transparent area B1 of the second display area AA2 of the display panel is increased, and the photosensitive sensitivity of the photosensitive device disposed corresponding to the transparent area B1 of the second display area AA2 of the display panel is increased.
  • the lap structure 7 is made in the same layer as the source S or the drain D of the thin film transistor T in the pixel driving circuit 3, which simplifies the display panel manufacturing process, and directly electrically connects the transparent area compared with not providing the lap structure 7
  • the resistance of the lap structure 7 between the anode 4 and the anode wiring 6 of B1 is smaller, which is beneficial to reduce the impedance of the electrical connection line between the anode 4 and the anode wiring 6 of the transparent area B1, and improve the signal transmission rate of the aforementioned electrical connection line.
  • FIG. 3 is a schematic diagram of a cross-sectional structure of a display panel during the formation of anode traces according to an embodiment of the application
  • FIG. 4 is a schematic diagram of a cross-sectional structure of the display panel before the anode is formed in a transparent area provided by an embodiment of the application.
  • the anode wiring 6 is formed after the source S and the drain D of the thin film transistor T in the pixel driving circuit 3 are formed, and the anode wiring 6 is sputtered with tin oxide (ITO) Material formation.
  • ITO1 represents the material of the anode trace 6 formed by sputtering.
  • the source electrode S or the drain electrode D of the thin film transistor T in the pixel driving circuit 3 of AA1 will also form the anode wiring 6 material in the second display area AA2, and the sputtering film forming process for forming the anode wiring 6 will affect the second display area AA2.
  • the anode 4 of the second display area AA2 is formed after the planarization layer 8 in the array substrate 1 is formed, and the corresponding thin film transistor T has been formed to expose the source S or drain of the thin film transistor T
  • the anode 4 of the second display area AA2 is formed by sputtering ITO material.
  • ITO2 represents the material of the anode 4 of the second display area AA2 sputtered.
  • the second display area AA2 The anode 4 should be formed after magnetron sputtering and etching on the entire surface of the entire display panel, so that the source S or drain D of the thin film transistor T in the pixel driving circuit 3 of the first display area AA1 is the same.
  • the material that will form the anode 4 in the second display area AA2, and the sputtering film forming process for forming the anode 4 will affect the surface of the source electrode S or the drain electrode D of the thin film transistor T in the pixel driving circuit 3 in the first display area AA1
  • Characteristic when the anode 4 of the light-emitting structure 2 in the subsequent first display area AA1 is deposited in the via a2 to achieve electrical connection with the corresponding pixel driving circuit 3, the surface roughness of the anode 4 in the via a2 is relatively high. Large, it affects the signal transmission rate and the display uniformity of the display panel, and affects the light-emitting characteristics of the light-emitting structure 2.
  • the anode 4 is electrically connected to the corresponding pixel driving circuit 3 in the via hole a2 through the corresponding isolation structure 5 in the first display area AA1.
  • the isolation structure 5 is perpendicular to the display panel.
  • the corresponding anode 4 is covered in the direction of, so that the isolation structure 5 corresponding to the aforementioned via a2 realizes the connection between the anode 4 in the first display area AA1 and the source or drain of the thin film transistor T in the pixel driving circuit 3 Effective isolation, reducing the overlap resistance between the anode 4 in the via a2 and the source or drain of the thin film transistor T, weakening the diffuse reflection phenomenon in the via a2, and optimizing the light-emitting structure 2 in the first display area AA1 The luminous effect of, which further optimizes the display effect of the first display area AA1 of the display panel.
  • the anode 4 of the second display area AA2 is formed on the planarization layer 8 in the array substrate 1, and the corresponding thin film transistor T has been formed to expose the source S or the drain D of the thin film transistor T
  • the anode 4 of the second display area AA2 is formed so that the material of the anode 4 in the second display area AA2 is also formed on the planarization layer 8 of the first display area AA1 to form the second display area AA2
  • the sputtering film forming process of the inner anode 4 will affect the physical and chemical properties of the surface of the planarization layer 8 in the first display area AA1, resulting in the subsequent deposition of the anode 4 of the light-emitting structure 2 in the first display area AA1 on the planarization layer 8.
  • the anode 4 of each light-emitting structure 2 in at least one light-emitting structure 2 is correspondingly provided with the anode 4 of each light-emitting structure 2 adjacent to each light-emitting structure 2 corresponds to the isolation structure 5 on one side of the pixel driving circuit 3, the anode 4 of each light-emitting structure 2 is driven by the isolation structure 5 corresponding to each light-emitting structure 2 and the pixel corresponding to each light-emitting structure 2
  • the circuit 3 is electrically connected, corresponding to the light-emitting opening area a1 of each light-emitting structure 2, and the isolation structure 5 corresponding to each light-emitting structure 2 covers the anode 4 of each light-emitting structure 2 in a direction perpendicular to the display panel, Therefore, the light-emitting opening area a1 corresponding to the light-emitting structure 2 is effectively isolated between the anode 4 in the first display area AA1
  • the thickness of the isolation structure 5 can be set to be greater than or equal to 320 angstroms and less than or equal to 400 angstroms, taking into account the anode 4 of the light emitting structure 2 in the first display area AA1 and the corresponding pixel drive
  • the resistance of the electrical connection lines of the circuit 3 and the isolation structure 5 made in the same layer as the anode 4 in the second display area AA2 are compatible with the thickness of the anode 4 in the second display area AA2.
  • the thickness of the isolation structure 5 is set to be greater than or equal to 320 angstroms, and less than or equal to 400 angstroms.
  • the dimension d of the edge of the anode 4 beyond the corresponding edge of the isolation structure 5 is greater than or equal to 0.6 microns and less than or equal to 1.2 Micrometers.
  • the film structure constituting the anode 4 in the first display area AA1 may be an ITO/Argentum (Ag)/ITO film structure, so wet etching is used to etch the anode 4 in the first display area AA1.
  • the characteristics of the light-emitting structure 2 in the area AA1 and the signal transmission structure of the anode 4 are arranged along the direction perpendicular to the display panel and corresponding to the light-emitting opening area a1 in the first display area AA1, and the light-emitting structure 2 in the first display area AA1
  • the portion where the anode 4 overlaps the corresponding isolation structure 5, so the size d of the anode 4 in the first display area AA1 that exceeds the corresponding edge of the isolation structure 5 is greater than or equal to 0.6 micrometers and less than or equal to 1.2 micrometers.
  • the indentation of the anode 4 in a display area AA1 leaves a margin greater than or equal to 0.6 microns and less than or equal to 1.2 microns, ensuring that even if the anode 4 in the first display area AA1 shrinks inward, it corresponds to the first display area AA1
  • the light-emitting opening area a1 is still provided with the anode 4 of the light-emitting structure 2 and the corresponding isolation structure 5 in the overlapping first display area AA1, so as to optimize the light-emitting characteristics of the light-emitting structure 2.
  • FIG. 5 is a schematic cross-sectional structure diagram of a display device provided by an embodiment of the present application.
  • the display device includes the display panel 10 described in the above embodiment.
  • the display device may further include a device body 9 on which the display panel 10 covers and is connected to the device body 9.
  • the arrows in FIG. 5 indicate the incident direction of external light.
  • the device body 9 in the display device has a device area C.
  • the device area C is located below the second display area AA2 of the display panel 10. More precisely, the device area C is located on the second display area of the display panel 10. Below the transparent area B1 of the area AA2, the device area C is provided with a photosensitive device configured to collect light through the second display area AA2.
  • the photosensitive device may be a photosensitive device such as a camera and a light sensor, which can pass through the second display Area AA2 collects external light and other operations.
  • the display device may be a digital device such as a mobile phone, a tablet, a palmtop computer, or an Apple player (internet portable audio device, ipod).

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Abstract

一种显示面板及显示装置，显示面板包括：第一显示区（AA1）和第二显示区（AA2），第一显示区（AA1）围绕至少部分第二显示区（AA2）设置，第二显示区（AA2）对应透过所述第二显示区（AA2）进行光线采集的感光器件；阵列基板（1）；多个发光结构（2），所述多个发光结构（2）位于阵列基板（1）上且对应第一显示区（AA1）和第二显示区（AA2）设置；以及，多个像素驱动电路（3），所述多个像素驱动电路（3）设置于阵列基板（1）内，且所述多个像素驱动电路（3）与所述多个发光结构（2）一一对应设置；在所述第一显示区（AA1）内，每个发光结构（2）的阳极（4）对应设置有位于所述每个发光结构（2）的阳极（4）的临近其对应的像素驱动电路（3）的一侧且具有导电性的隔离结构（5），所述每个发光结构（2）的阳极（4）通过所述每个发光结构（2）对应的隔离结构（5）与所述每个发光结构（2）对应的像素驱动电路（3）电连接；对应所述每个发光结构（2）的发光开口区（a1），所述每个发光结构（2）对应的隔离结构（5）沿垂直于显示面板的方向覆盖所述每个发光结构（2）的阳极（4）。

Description

显示面板及显示装置
本申请要求在2020年01月02日提交中国专利局、申请号为202010003325.0的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请实施例涉及显示技术领域，例如涉及一种显示面板及显示装置。
背景技术
随着电子设备的快速发展，用户对屏占比的要求越来越高，使得电子设备的全面屏显示受到业界越来越多的关注。电子设备如手机、平板电脑等，由于需要集成诸如前置摄像头、听筒以及红外感应元件等，故而可通过在显示屏上开槽(Notch)，在开槽区域设置摄像头、听筒以及红外感应元件等，但是这些电子设备均不是真正意义上的全面屏，并不能在整个屏幕的区域进行显示，如在摄像头区域不能显示画面。
为实现真正的全面屏，屏下摄像头技术应运而生，即设置显示屏中设置有感光器件的区域仍可以用于显示，在设置有感光器件的区域形成透明阳极的溅射成膜工艺会影响正常显示区内发光结构的发光特性，进而影响显示面板正常显示区的显示效果。
发明内容
本申请提供一种显示面板及显示装置，优化了第一显示区内的发光结构的发光效果，进而优化了显示面板第一显示区的显示效果。
本申请实施例提供了一种显示面板，包括：
第一显示区和第二显示区，所述第一显示区围绕至少部分所述第二显示区设置，所述第二显示区对应透过所述第二显示区进行光线采集的感光器件；
阵列基板；
多个发光结构，所述多个发光结构位于所述阵列基板上且对应所述第一显示区和所述第二显示区设置；以及，
多个像素驱动电路，所述多个像素驱动电路设置于所述阵列基板内，且多个所述发光结构与多个所述像素驱动电路一一对应设置；
在所述第一显示区内，至少一个所述发光结构中每个发光结构的阳极对应设置有位于所述每个发光结构的阳极的临近所述每个发光结构对应的所述像素驱动电路的一侧且具有导电性的隔离结构，所述每个发光结构的阳极通过所述每个发光结构对应的所述隔离结构与所述每个发光结构对应的所述像素驱动电路电连接；对应所述每个发光结构的发光开口区，所述每个发光结构对应的所述隔离结构沿垂直于所述显示面板的方向覆盖所述每个发光结构的阳极。
本申请实施例还提供了一种显示装置，包括：
如上所述的显示面板。
本申请实施例提供了一种显示面板及显示装置，设置显示面板包括第一显示区和第二显示区，第一显示区围绕至少部分第二显示区设置，第二显示区对应设置有感光器件，感光器件设置为透过第二显示区进行光线采集；显示面板包括阵列基板以及位于阵列基板上对应第一显示区和第二显示区设置的多个发光结构，阵列基板内设置有多个像素驱动电路，多个像素驱动电路与多个发光结构一一对应设置；第一显示区内，至少一个发光结构中每个发光结构的阳极对应设置有位于所述每个发光结构的阳极的临近所述每个发光结构对应的像素驱动电路的一侧且具有导电性的隔离结构，所述每个发光结构的阳极通过所述每个发光结构对应的隔离结构与所述每个发光结构对应的像素驱动电路电连接，对应每个发光结构的发光开口区，所述每个发光结构对应的隔离结构沿垂 直于显示面板的方向覆盖所述每个发光结构的阳极，使得对应发光结构的发光开口区，通过隔离结构实现了对第一显示区内阳极与平坦化层之间的有效隔离，优化了第一显示区内发光结构的发光效果，进而优化了显示面板第一显示区的显示效果。
附图说明
图1为本申请实施例提供的一种显示面板的俯视结构示意图；
图2为本申请实施例提供的一种显示面板的剖面结构示意图；
图3为本申请实施例提供的阳极走线形成过程显示面板的剖面结构示意图；
图4为本申请实施例提供的透明区的阳极形成前显示面板的剖面结构示意图；
图5为本申请实施例提供的一种显示装置的剖面结构示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行描述。附图中给出了本申请的实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。
为确保显示面板对应设置有感光器件的区域有足够的光线透过率，该区域需要在平坦化层上形成透明阳极，透明的阳极需在显示面板范围内的整面进行磁控溅射和刻蚀后形成，使得在未设置感光器件的正常显示区的平坦化层上同样会形成所述透明的阳极的材料，形成透明的阳极的溅射成膜工艺会影响正常显示区内平坦化层表面的理化特性，导致后续正常显示区内的阳极沉积在平坦化层上时，正常显示区内的阳极会存在迁移现象，影响正常显示区内发光结构的发光特性，进而影响显示面板正常显示区的显示效果。
本申请实施例设置在第一显示区内，至少一个发光结构中每个发光结构的阳极对应设置有位于所述每个发光结构的阳极的临近所述每个发光结构对应的像素驱动电路的一侧的隔离结构，所述每个发光结构的阳极通过所述每个发光结构对应的隔离结构与所述每个发光结构对应的像素驱动电路电连接，对应所述每个发光结构的发光开口区，所述每个发光结构对应的隔离结构沿垂直于显示面板的方向覆盖所述每个发光结构的阳极，使得对应发光结构的发光开口区，通过隔离结构实现了对第一显示区内阳极与平坦化层之间的有效隔离，避免了第二显示区内的阳极的制作过程引起第一显示区内的平坦化层表面理化特性改变，进而引起发光结构的发光开口区位置以及平坦化层上方的阳极存在迁移异常的问题，也就避免了第一显示区内的平坦化层的表面理化特性改变对第一显示区内的发光结构发光特性的影响，优化了第一显示区内的发光结构的发光效果，进而优化了显示面板第一显示区的显示效果。
图1为本申请实施例提供的一种显示面板的俯视结构示意图，图2为本申请实施例提供的一种显示面板的剖面结构示意图。结合图1和图2，显示面板包括第一显示区AA1和第二显示区AA2，第一显示区AA1围绕至少部分第二显示区AA2设置，图1示例性地设置第一显示区AA1围绕第二显示区AA2设置，第二显示区AA2对应设置有感光器件，感光器件设置为透过第二显示区AA2进行光线采集。例如，感光器件可以为摄像头感光器件或者指纹识别传感器等感光器件。第二显示区AA2为对应感光器件设置的区域，该区域既可以实现显示功能，又具有足够的光线透过率以确保感光器件进行感光识别的精度。第一显示区AA1为显示面板中的正常显示区域，用于实现未设置感光器件区域的正常显示。图1仅示例性地示出了第二显示区AA2在显示面板中的位置，本申请实施例对第二显示区AA2在显示面板中位置不作限定。
显示面板包括阵列基板1以及位于阵列基板1上的对应第一显示区AA1和第二显示区AA2设置的多个发光结构2。发光结构2可以为有机发光结构。阵列基板1内设置有多个像素驱动电路3。多个发光结构2与多个像素驱动电路3一一对应设置，像素驱动电路3向对应的发光结构2提供驱动电流，发光结构2响应驱动电流发光，显示面板实现显示功能。
在第一显示区AA1内，至少一个发光结构2中每个发光结构2的阳极4对应设置有具有导电性的隔离结构5，所述每个发光结构2对应的隔离结构5位于所述每个发光结构的阳极4的临近所述每个发光结构2对应的像素驱动电路3的一侧，所述每个发光结构2的阳极4通过所述每个发光结构对应的隔离结构5与所述每个发光结构2对应的像素驱动电路3电连接。发光结构2包括阳极4、阴极(图2中未示出)以及位于阳极4和阴极之间的发光功能层(图2中未示出)。发光功能层位于发光结构2的发光开口区a1，即发光结构2真正实现发光的区域为发光结构2的发光开口区a1。对应所述每个发光结构2的发光开口区a1，沿垂直于显示面板的方向，所述每个发光结构2对应的隔离结构5覆盖所述每个发光结构2的阳极4，即导电结构所在区域覆盖阳极4所在区域。
结合图1和图2，阵列基板1还包括位于像素驱动电路3与发光结构2之间的平坦化层8，平坦化层8用于为发光结构2的形成提供较为平坦的制作膜层平面。为实现全面屏显示，对应设置有感光器件的第二显示区AA2同样可以实现显示功能，且为了实现对应第二显示区AA2设置的感光器件的感光功能，例如实现摄像功能或者指纹识别功能等，需要确保第二显示区AA2有足够的光线透过率，因此在第二显示区AA2的至少部分区域需要形成透明的电极，例如第二显示区AA2的透明的阳极4形成于平坦化层8上。
在形成第二显示区AA2内的透明的阳极4时，透明的阳极4需在显示面板 内的整面进行磁控溅射和刻蚀后形成，使得在第一显示区AA1的平坦化层8上同样会形成第二显示区AA2内的透明的阳极4的材料，形成第二显示区AA2内的透明的阳极4的溅射成膜工艺会影响第一显示区AA1内的平坦化层8表面的理化特性，导致后续第一显示区AA1内的阳极4沉积在平坦化层8上时，第一显示区AA1内的阳极4会存在迁移现象。在刻蚀形成透明的阳极4后，需要剥离覆盖透明的阳极4的光刻胶，平坦化层8完全浸在剥离液中，平坦化层8本身也是一种光刻胶，因此受剥离液的影响，平坦化层8表面的理化特性发生变化，进而导致后续第一显示区AA1内的阳极4沉积在平坦化层8上时，第一显示区AA1内的阳极4会存在迁移现象，影响第一显示区AA1内的发光结构2的发光特性，例如第一显示区AA1内的阳极4迁移会导致发光结构2的发光颜色偏黄等，进而影响显示面板第一显示区AA1的显示效果。
结合图1和图2，本申请实施例通过设置在第一显示区AA1内，至少一个发光结构2中每个发光结构2的阳极4对应设置有位于所述每个发光结构2的阳极4的临近所述每个发光结构2的对应的像素驱动电路3的一侧的隔离结构5，所述每个发光结构2的阳极4通过所述每个发光结构2对应的隔离结构5与所述每个发光结构2对应的像素驱动电路3电连接，对应所述每个发光结构2的发光开口区a1，所述每个发光结构2对应的隔离结构5沿垂直于显示面板的方向覆盖所述每个发光结构2的阳极4，使得对应发光结构2的发光开口区a1，通过隔离结构5实现了对第一显示区AA1内的阳极4与平坦化层8之间的有效隔离，避免了第二显示区AA2内的阳极4的制作过程引起第一显示区AA1内平坦化层8表面理化特性改变，进而引起发光结构2的发光开口区a1位置，平坦化层8上方的阳极4存在迁移异常的问题，也就避免了第一显示区AA1内平坦化层8表面理化特性改变对第一显示区AA1内发光结构2发光特性的影响，优 化了第一显示区AA1内发光结构2的发光效果，进而优化了显示面板第一显示区AA1的显示效果。
可选地，结合图1和图2，第一显示区AA1内，阳极4通过对应的隔离结构5在过孔a2内与对应的像素驱动电路3电连接，在过孔a2内，隔离结构5沿垂直于显示面板的方向覆盖对应的阳极4。
阵列基板1还包括位于像素驱动电路3与发光结构2之间的平坦化层8。在第一显示区AA1内，阳极4与隔离结构5电连接，隔离结构5通过贯穿平坦化层8的过孔a2与对应的像素驱动电路3电连接，进而实现第一显示区AA1内的发光结构2的阳极4与对应的像素驱动电路3的电连接，在前述过孔a2内，沿垂直于显示面板的方向，隔离结构5覆盖对应的阳极4，例如设置过孔a2内的底部和侧壁上均设置有隔离结构5以及隔离结构5对应的发光结构2的阳极4。为实现全面屏显示，显示面板的设置有感光器件的第二显示区AA2同样可以实现显示功能，且为了实现对应第二显示区AA2设置的感光器件的感光功能，需要确保第二显示区AA2有足够的光线透过率，因此在第二显示区AA2的至少部分区域需要形成透明的阳极4以及相应的透明走线，第二显示区AA2的透明的阳极4和透明走线均在形成像素驱动电路3后形成。
由于在形成第二显示区AA2内的透明的阳极4和透明走线时，透明的阳极4和透明走线均在显示面板内的整面进行磁控溅射和刻蚀后形成，使得在第一显示区AA1的像素驱动电路3中的薄膜晶体管T的源极S或者漏极D上同样会形成第二显示区AA2内的透明的阳极4的材料或者透明走线的材料，形成第二显示区AA2内的透明阳极4和透明走线的溅射成膜工艺会影响第一显示区AA1内像素驱动电路3中的薄膜晶体管T的源极S或者漏极D的表面特性，例如构成源极S或者漏极D的膜层材料为Ti-Al-Ti，则形成第二显示区AA2内的透明 的阳极4和透明走线的溅射成膜工艺会影响第一显示区AA1内的像素驱动电路3中的薄膜晶体管T的源极S或者漏极D最上层Ti表面的特性，导致在后续第一显示区AA1内的发光结构2的阳极4沉积在过孔a2中以实现与对应的像素驱动电路3的电连接时，过孔a2内的阳极4表面的粗糙度较大。
而过孔a2内的阳极4表面的粗糙度较大，一是会导致过孔a2内的阳极4与薄膜晶体管T的源极S或漏极D的搭接电阻较大，影响信号传输速率，且可能导致不同过孔a2内的阳极4表面的粗糙度差别较大，导致不同过孔a2内的阳极4与薄膜晶体管T的源极S或漏极D的搭接电阻差别较大，影响显示面板的显示均匀性。二是表面粗糙的阳极4会导致过孔a2内漫反射严重，影响发光结构2的发光特性，例如发光结构2的发光颜色偏黑等，进而影响显示面板的第一显示区AA1的显示效果。
结合图1和图2，本申请实施例通过设置第一显示区AA1内，阳极4通过对应的隔离结构5在过孔a2内与对应的像素驱动电路3电连接，在过孔a2内，隔离结构5沿垂直于显示面板的方向覆盖对应的阳极4，使得对应前述过孔a2内的隔离结构5实现了对第一显示区AA1内的阳极4与像素驱动电路3中薄膜晶体管T的源极S或者漏极D之间的有效隔离，避免了第二显示区AA2内的透明的阳极4和透明走线的制作过程引起第一显示区AA1内像素驱动电路3中的薄膜晶体管T的源极S或漏极D表面特性变化而引起的过孔a2内的阳极4表面的粗糙度较大，影响信号传输速率以及显示面板的显示均一性，影响发光结构2的发光特性的问题，减小了过孔a2内的阳极4与薄膜晶体管T的源极S或漏极D的搭接电阻，弱化了过孔a2内漫反射现象，优化了第一显示区AA1内的发光结构2的发光效果，进而优化了显示面板第一显示区AA1的显示效果。图2示例性地设置第一显示区AA1内，发光结构2的阳极4与对应的像素驱动电路3 中的薄膜晶体管T的漏极D电连接，也可以设置发光结构2的阳极4与对应的像素驱动电路3中的薄膜晶体管T的源极S电连接。
可选地，结合图1和图2，可以设置隔离结构5与第二显示区AA2内的发光结构2的阳极4同层制作。示例性地，可以设置构成隔离结构5和第二显示区AA2内的发光结构2的阳极4的材料包括透明材料。可选地，透明材料包括氧化铟锡，构成第二显示区AA2内的发光结构2的阳极4的材料包括透明材料，以提高显示面板的第二显示区AA2的透光率，提高显示面板的第二显示区AA2设置的感光器件的感光灵敏度。
第二显示区AA2内，发光结构2的阳极4形成在阵列基板1中的平坦化层8的远离像素驱动电路3的一侧，设置第一显示区AA1内的隔离结构5与第二显示区AA2内发光结构2的阳极4同层制作，即第一显示区AA1内的隔离结构5同样形成在阵列基板1中的平坦化层8的远离像素驱动电路3的一侧，使得第一显示区AA1内的隔离结构5覆盖对应的发光结构2的发光开口区a1以及第一显示区AA1内暴露出薄膜晶体管T的源极S或者漏极D的过孔a2所在区域，再在第一显示区AA1的隔离结构5上形成发光结构2的阳极4，发光结构2的阳极4与对应的隔离结构5接触设置，实现阳极4与对应的像素驱动电路3之间的电连接，这样，避免了第一显示区AA1内的平坦化层8表面理化特性改变对第一显示区AA1内的发光结构2发光特性的影响，减小了过孔a2内的阳极4与薄膜晶体管T的源极S或漏极D的搭接电阻，弱化了过孔a2内漫反射现象，优化了第一显示区AA1内的发光结构2的发光效果的同时，简化了显示面板的制程。
可选地，结合图1和图2，第二显示区AA2包括透明区B1和过渡区B2。示例性地可以设置第一显示区AA1围绕第二显示区AA2设置，第二显示区AA2 内的过渡区B2围绕第二显示区AA2内的透明区B1设置，透明区B1和过渡区B2均设置有发光结构2，即第二显示区AA2的透明区B1和过渡区B2均能实现显示功能，对应透明区B1的发光结构2的像素驱动电路3和对应过渡区B2的发光结构2的像素驱动电路3均设置于过渡区B2，透明区B1的发光结构2的阳极4通过阳极走线6与位于过渡区B2的对应的像素驱动电路3电连接。
感光器件对应显示面板的第二显示区AA2的透明区B1设置，第二显示区AA2的透明区B1内未设置遮光的像素驱动电路3，透光率较高，设置感光器件对应第二显示区AA2的透明区B1设置有利于提高感光器件的感光灵敏度。过渡区B2设置的像素驱动电路3既向过渡区B2内对应的发光结构2提供驱动电流，又向透明区B1内对应的发光结构2提供驱动电流，即对应过渡区B2的发光结构2的像素驱动电路3以及对应透明区B1的发光结构2的像素驱动电路3均设置在过渡区B2，因此需要设置阳极走线6，利用阳极走线6实现透明区B1的发光结构2的阳极4与位于过渡区B2的像素驱动电路3的电连接，透明区B1的阳极4接收过渡区B2内对应的像素驱动电路3提供的驱动电流，实现透明区B1的显示功能。
可选地，结合图1和图2，透明区B1内设置有搭接结构7，搭接结构7与像素驱动电路3中的薄膜晶体管T的源漏极(即薄膜晶体管的源极S和漏极D)同层制作，透明区B1内的阳极4通过过孔a3与搭接结构7电连接，阳极走线6搭接于搭接结构7上并走线至过渡区B2与对应的像素驱动电路3电连接。
随着显示面板分辨率的提高，显示面板的第一显示区AA1和第二显示区AA2内的发光结构2的个数都在增加，第二显示区AA2的透明区B1内的发光结构2的数量也在增加，即透明区B1内的阳极4的排布越来越紧密，而透明区B1内的发光结构2的阳极4又要与过渡区B2内对应的像素驱动电路3电连接， 使得透明区B1的阳极4所在膜层很难留出额外的空间供给阳极4走线至过渡区B2与对应的像素驱动电路3电连接，因此可以在透明区B1的其余膜层设置相应的阳极走线6以连接透明区B1的阳极4和过渡区B2对应的像素驱动电路3。
本申请实施例在第二显示区AA2设置搭接结构7，第二显示区AA2内的阳极4通过过孔a3与搭接结构7电连接，阳极走线6搭接于搭接结构7上并走线至过渡区B2与对应的像素驱动电路3电连接，可以设置搭接结构7与像素驱动电路3中的薄膜晶体管T的源漏极同层制作，即透明区B1内的发光结构2的阳极4先经过贯穿平坦化层8的过孔a3连接至与薄膜晶体管T的源极S和漏极D同层制作的搭接结构7，由于阳极走线6搭接在搭接结构7上，即阳极走线6与搭接结构7电连接，且阳极走线6走线至过渡区B2与对应的像素驱动电路3电连接，进而实现透明区B1的阳极4与过渡区B2的对应的像素驱动电路3电连接。
示例性地，构成阳极走线6的材料包括透明材料，可选地，透明材料包括氧化铟锡，阳极走线6至少部分位于透明区B1，设置构成阳极走线6的材料包括透明材料，以提高显示面板第二显示区AA2的透明区B1的透光率，提高对应显示面板的第二显示区AA2的透明区B1设置的感光器件的感光灵敏度。设置搭接结构7与像素驱动电路3中的薄膜晶体管T的源极S或者漏极D同层制作，在简化显示面板制程的同时，相比于不设置搭接结构7而直接电连接透明区B1的阳极4与阳极走线6，搭接结构7的电阻更小，有利于减小透明区B1的阳极4与阳极走线6电连接线路的阻抗，提高前述电连接线路的信号传输速率。
图3为本申请实施例提供的阳极走线形成过程显示面板的剖面结构示意图，图4为本申请实施例提供的透明区的阳极形成前显示面板的剖面结构示意图。 结合图1至图3，阳极走线6在像素驱动电路3中的薄膜晶体管T的源极S和漏极D形成后形成，阳极走线6通过溅射氧化烟锡(Indium tin oxide，ITO)材料形成，图3中ITO1表示溅射形成的阳极走线6的材料，由于阳极走线6要在整个显示面板内的整面进行磁控溅射和刻蚀后形成，使得在第一显示区AA1的像素驱动电路3中的薄膜晶体管T的源极S或者漏极D上同样会形成第二显示区AA2内的阳极走线6材料，形成阳极走线6的溅射成膜工艺会影响第一显示区AA1内的像素驱动电路3中的薄膜晶体管T的源极S或者漏极D的表面特性。
结合图1、图2和图4，第二显示区AA2的阳极4在阵列基板1中的平坦化层8形成后形成且在对应的薄膜晶体管T已形成露出薄膜晶体管T的源极S或漏极D的过孔后形成，第二显示区AA2的阳极4通过溅射ITO材料形成，图4中ITO2表示溅射的第二显示区AA2的阳极4的材料，同样的，第二显示区AA2的阳极4要在整个显示面板内的整面进行磁控溅射和刻蚀后形成，使得在第一显示区AA1的像素驱动电路3中的薄膜晶体管T的源极S或者漏极D上同样会形成第二显示区AA2内的阳极4的材料，形成阳极4的溅射成膜工艺会影响第一显示区AA1内的像素驱动电路3中的薄膜晶体管T源极S或者漏极D的表面特性，导致在后续第一显示区AA1内的发光结构2的阳极4沉积在过孔a2中以实现与对应的像素驱动电路3的电连接时，过孔a2内的阳极4表面的粗糙度较大，影响信号传输速率和显示面板的显示均匀性，影响发光结构2的发光特性。
本申请实施例通过设置第一显示区AA1内，阳极4通过对应的隔离结构5在过孔a2内与对应的像素驱动电路3电连接，在过孔a2内，隔离结构5沿垂直于显示面板的方向覆盖对应的阳极4，使得对应前述过孔a2内的隔离结构5实现了对第一显示区AA1内的阳极4与像素驱动电路3中的薄膜晶体管T的源极 或者漏极之间的有效隔离，减小了过孔a2内的阳极4与薄膜晶体管T的源极或漏极的搭接电阻，弱化了过孔a2内漫反射现象，优化了第一显示区AA1内的发光结构2的发光效果，进而优化了显示面板第一显示区AA1的显示效果。
结合图1、图2和图4，第二显示区AA2的阳极4在阵列基板1中的平坦化层8形成且对应的薄膜晶体管T已形成露出薄膜晶体管T的源极S或漏极D的过孔后形成，第二显示区AA2的阳极4的形成还使得在第一显示区AA1的平坦化层8上同样会形成第二显示区AA2内的阳极4的材料，形成第二显示区AA2内的阳极4的溅射成膜工艺会影响第一显示区AA1内平坦化层8表面的理化特性，导致在后续第一显示区AA1内的发光结构2的阳极4沉积在平坦化层8上时，第一显示区AA1内的阳极4存在迁移，影响第一显示区AA1内的发光结构2的发光特性，进而影响第一显示区AA1内显示面板的显示效果。
本申请实施例通过设置在第一显示区AA1内，至少一个发光结构2中每个发光结构2的阳极4对应设置有位于所述每个发光结构2的阳极4的临近所述每个发光结构2对应的像素驱动电路3的一侧的隔离结构5，所述每个发光结构2的阳极4通过所述每个发光结构2对应的隔离结构5与所述每个发光结构2对应的像素驱动电路3电连接，对应所述每个发光结构2的发光开口区a1，所述每个发光结构2对应的隔离结构5沿垂直于显示面板的方向覆盖所述每个发光结构2的阳极4，使得对应发光结构2的发光开口区a1，通过隔离结构5实现了对第一显示区AA1内的阳极4与平坦化层8之间的有效隔离，优化了第一显示区AA1内的发光结构2的发光效果，进而优化了显示面板第一显示区AA1的显示效果。
可选地，结合图1和图2，可以设置隔离结构5的厚度大于或等于320埃，且小于或等于400埃，兼顾第一显示区AA1内的发光结构2的阳极4与对应的 像素驱动电路3的电连接线路的电阻以及与第二显示区AA2内的阳极4同层制作的隔离结构5与第二显示区AA2内的阳极4的厚度兼容因素，设置隔离结构5的厚度大于或等于320埃，且小于或等于400埃。
可选地，结合图1和图2，沿平行于显示面板的方向，第一显示区AA1内，阳极4的边缘超出隔离结构5对应边缘的尺寸d大于或等于0.6微米，且小于或等于1.2微米。示例性地，构成第一显示区AA1内的阳极4的膜层结构可以为ITO/银(Argentum，Ag)/ITO膜层结构，因此采用湿法刻蚀对第一显示区AA1内的阳极4进行图案化，湿法刻蚀第一显示区AA1内的阳极4的过程中可能会存在第一显示区AA1内的阳极4沿平行于显示面板的方向内缩的现象，而真正影响第一显示区AA1内的发光结构2特性以及阳极4信号传输的结构为，沿垂直于显示面板的方向且对应第一显示区AA1内发光开口区a1设置的，第一显示区AA1内的发光结构2的阳极4与对应的隔离结构5交叠的部分，因此设置第一显示区AA1内的阳极4的边缘超出隔离结构5对应边缘的尺寸d大于或等于0.6微米，且小于或等于1.2微米，为第一显示区AA1内的阳极4的内缩留出大于或等于0.6微米，且小于或等于1.2微米的余量，确保即使第一显示区AA1内的阳极4内缩，对应第一显示区AA1内的发光开口区a1仍设置有交叠的第一显示区AA1内的发光结构2的阳极4和对应的隔离结构5，优化发光结构2的发光特性。
本申请实施例还提供了一种显示装置，图5为本申请实施例提供的一种显示装置的剖面结构示意图。结合图1和图5，显示装置包括上述实施例所述的显示面板10。显示装置还可以包括设备本体9，显示面板10覆盖在设备本体9上，且与该设备本体9连接，图5中的箭头表示外界光线的入射方向。
结合图1和图5，显示装置中的设备本体9具有器件区C，器件区C位于显 示面板10的第二显示区AA2的下方，更准确地，器件区C位于显示面板10的第二显示区AA2的透明区B1的下方，器件区C设置有设置为透过第二显示区AA2进行光线采集的感光器件，感光器件可以是诸如摄像头及光传感器等感光器件，能够透过该第二显示区AA2对外部光线进行采集等操作。示例性地，显示装置可以是手机、平板、掌上电脑或者苹果播放器(internet portable audio device，ipod)等数码设备。

Claims (20)

  1. 一种显示面板，包括：
    第一显示区和第二显示区，所述第一显示区围绕至少部分所述第二显示区设置，所述第二显示区对应透过所述第二显示区进行光线采集的感光器件；
    阵列基板；
    多个发光结构，所述多个发光结构位于所述阵列基板上且对应所述第一显示区和所述第二显示区设置；以及，
    多个像素驱动电路，所述多个像素驱动电路设置于所述阵列基板内，且所述多个像素驱动电路与所述多个发光结构一一对应设置；
    在所述第一显示区内，至少一个所述发光结构中每个发光结构的阳极对应设置有位于所述每个发光结构的阳极的临近所述每个发光结构对应的所述像素驱动电路的一侧且具有导电性的隔离结构，所述每个发光结构的阳极通过所述每个发光结构对应的所述隔离结构与所述每个发光结构对应的所述像素驱动电路电连接；对应所述每个发光结构的发光开口区，所述每个发光结构对应的所述隔离结构沿垂直于所述显示面板的方向覆盖所述每个发光结构的阳极。
  2. 根据权利要求1所述的显示面板，还包括：位于所述多个发光结构与所述多个像素驱动电路之间的平坦化层；
    在所述第一显示区内，所述每个发光结构的阳极通过对应的所述隔离结构在贯穿所述平坦化层的过孔内与对应的所述像素驱动电路电连接，在所述过孔内，所述每个发光结构对应的隔离结构沿垂直于所述显示面板的方向覆盖所述每个发光结构的阳极。
  3. 根据权利要求1所述的显示面板，其中，所述隔离结构与所述第二显示区内的所述发光结构的阳极同层制作。
  4. 根据权利要求3所述的显示面板，其中，构成所述隔离结构的材料和所 述第二显示区内的所述发光结构的阳极的材料包括透明材料。
  5. 根据权利要求1所述的显示面板，其中，所述第二显示区包括透明区和过渡区，所述透明区和所述过渡区均设置有所述发光结构，对应所述透明区的所述发光结构的所述像素驱动电路和对应所述过渡区的所述发光结构的所述像素驱动电路均设置于所述过渡区，所述透明区的所述发光结构的阳极通过阳极走线与位于所述过渡区的所述透明区的所述发光结构对应的所述像素驱动电路电连接。
  6. 根据权利要求5所述的显示面板，还包括：位于所述多个发光结构与所述多个像素驱动电路之间的平坦化层；
    所述透明区设置有搭接结构，所述搭接结构与所述像素驱动电路中的薄膜晶体管的源漏极同层制作，所述透明区内的所述发光结构的阳极通过贯穿所述平坦化层的过孔与所述搭接结构电连接，所述阳极走线搭接于所述搭接结构上并走线至所述过渡区与所述透明区内的所述发光结构对应的所述像素驱动电路电连接。
  7. 根据权利要求6所述的显示面板，其中，构成所述阳极走线的材料包括透明材料。
  8. 根据权利要求4或7所述的显示面板，其中，所述透明材料包括氧化铟锡。
  9. 根据权利要求1所述的显示面板，其中，所述隔离结构的厚度大于或等于320埃，且小于或等于400埃。
  10. 根据权利要求1所述的显示面板，其中，沿平行于所述显示面板的方向，在所述第一显示区内，所述阳极的边缘超出所述隔离结构对应边缘的尺寸大于或等于0.6微米，且小于或等于1.2微米。
  11. 根据权利要求1所述的显示面板，其中，所述第一显示区围绕全部第二显示区设置。
  12. 根据权利要求5所述的显示面板，其中，所述过渡区围绕所述透明区设置。
  13. 根据权利要求1所述的显示面板，其中，所述发光结构包括阳极、阴极，以及位于所述阳极和所述阴极之间的发光功能层。
  14. 根据权利要求13所述的显示面板，其中，所述发光功能层位于所述发光结构的发光开口区。
  15. 根据权利要求1所述的显示面板，其中，所述发光结构的阳极与所述发光结构对应的像素驱动电路的薄膜晶体管的漏极电连接。
  16. 根据权利要求1所述的显示面板，其中，所述发光结构的阳极与所述发光结构对应的像素驱动电路的薄膜晶体管的源极电连接。
  17. 根据权利要求2所述的显示面板，其中，所述过孔的底部和侧壁均设置有所述隔离结构以及与所述隔离结构对应的发光结构的阳极。
  18. 一种显示装置，包括如权利要求1-17任一项所述的显示面板。
  19. 根据权利要求18所述的显示装置，还包括：设备本体，所述显示面板覆盖在所述设备本体上且与所述设备本体连接；
    所述设备本体具有器件区，所述器件区位于所述显示面板的第二显示区的透明区的下方，所述器件区设置有感光器件，所述感光器件设置为透过所述第二显示区进行光线采集。
  20. 根据权利要求19所述的显示装置，其中，所述感光器件包括摄像头感光器件或指纹识别传感器。
PCT/CN2020/132864 2020-01-02 2020-11-30 显示面板及显示装置 Ceased WO2021135784A1 (zh)

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