WO2021131606A1 - Capteur magnétique - Google Patents

Capteur magnétique Download PDF

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Publication number
WO2021131606A1
WO2021131606A1 PCT/JP2020/045212 JP2020045212W WO2021131606A1 WO 2021131606 A1 WO2021131606 A1 WO 2021131606A1 JP 2020045212 W JP2020045212 W JP 2020045212W WO 2021131606 A1 WO2021131606 A1 WO 2021131606A1
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WO
WIPO (PCT)
Prior art keywords
magnetic
region
magnetic material
sensor
displacement region
Prior art date
Application number
PCT/JP2020/045212
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English (en)
Japanese (ja)
Inventor
笠島　多聞
崇人 福井
郁人 小野寺
承彬 林
Original Assignee
Tdk株式会社
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Publication of WO2021131606A1 publication Critical patent/WO2021131606A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor in which 1 / f noise is reduced by mechanically displacing the magnetic path.
  • Non-Patent Documents 1 to 3 As a method of reducing 1 / f noise in a magnetic sensor, as described in Non-Patent Documents 1 to 3, measurement is performed by mechanically displacing the magnetic path using MEMS (Micro Electro Mechanical Systems). A method of amplitude-modulating the target magnetic field has been proposed.
  • MEMS Micro Electro Mechanical Systems
  • Non-Patent Document 1 As shown in FIG. 14, the GMR element 4 is arranged in the magnetic gap between the magnetic path 1 and the magnetic path 2, and the GMR element 4 is covered with the variable magnetic path 3 having a MEMS structure.
  • a method of changing the ratio of the magnetic flux passing through the GMR element 4 by driving the variable magnetic path 3 up and down has been proposed. According to this, by driving the variable magnetic path 3 at high speed, the magnetic field to be measured is amplitude-modulated, so that 1 / f noise can be reduced.
  • Non-Patent Documents 1 to 3 have a complicated structure and require a large number of processes because the variable magnetic path having a MEMS structure and the magnetic sensing element are integrated on the same chip. There were problems such as high manufacturing cost, low yield, and long lead time. Moreover, in order to obtain the MEMS structure described in Non-Patent Documents 1 to 3, it is necessary to perform a high temperature process such as sputtering or milling after forming a magnetizing element such as an MR element on the wafer. There is a problem that the characteristics of the magnetosensitive element are deteriorated by the high temperature process.
  • a high temperature process such as sputtering or milling after forming a magnetizing element such as an MR element
  • an object of the present invention is to provide a magnetic sensor capable of reducing 1 / f noise while preventing an increase in manufacturing cost and deterioration of characteristics of a magnetic sensitive element.
  • the magnetic sensor according to the present invention is provided in the vicinity of the first magnetic gap formed by the first and second external magnetic materials, the end of the first external magnetic material, and the end of the second external magnetic material. It is provided with a sensor chip containing the magnetically sensitive element, and a MEMS chip including a displacement region covering the ends of the first and second external magnetic materials and a support region for elastically supporting the displacement region, and the displacement region is bypass magnetism.
  • the body layer is included, and at least one of the displacement region and the support region includes the piezoelectric layer, and the distance between the first magnetic gap and the bypass magnetic layer changes depending on the voltage applied to the piezoelectric layer.
  • the manufacturing cost is suppressed and the characteristics of the magnetic sensitive element by the high temperature process are suppressed as compared with the case where the variable magnetic path and the magnetic sensitive element are integrated on the same chip. It is possible to reduce 1 / f noise while preventing deterioration.
  • the support region may include a first connecting portion connected to one end of the displacement region and a second connecting portion connected to the other end of the displacement region. According to this, since the displacement region has a double-sided structure in which the displacement region is supported from at least two places, the displacement region can be stably supported.
  • the MEMS chip may have a membrane structure in which the thickness in the displacement region and the support region is selectively reduced. According to this, it is possible to increase the displacement amount in the displacement region.
  • the displacement region is located in the region defined by the plurality of first slits formed in the membrane portion of the MEMS chip, and the support region is formed in the membrane portion of the MEMS chip so as to surround the displacement region. It may be located in an area partitioned by a plurality of second slits arranged in. According to this, it is possible to secure a sufficient amount of displacement in the displacement region.
  • the piezoelectric layer may be provided in both the displacement region and the region of the support region sandwiched between the first slit and the second slit. According to this, it is possible to increase the amount of displacement in the displacement region.
  • the sensor chip further includes the first and second magnetic material layers, and the magnetic sensitive element is formed by the end portion of the first magnetic material layer and the end portion of the second magnetic material layer.
  • the first external magnetic material overlaps the first magnetic material layer without overlapping the second magnetic material layer
  • the second external magnetic material is the first magnetic material layer. It may overlap with the second magnetic material layer without overlapping with. According to this, since the magnetic flux can be more concentrated on the magnetic sensing element, it is possible to obtain higher detection sensitivity.
  • the manufacturing cost is suppressed and the feeling due to the high temperature process is suppressed as compared with the case where the variable magnetic path and the magnetic sensing element are integrated on the same chip. It is possible to reduce 1 / f noise while preventing deterioration of the characteristics of the magnetic element.
  • FIG. 1 is a schematic perspective view showing the appearance of a magnetic sensor according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic perspective view showing a state in which the MEMS chip 30 is removed from the magnetic sensor.
  • FIG. 3 is a schematic perspective view showing a state in which the external magnetic bodies 21 and 22 and the MEMS chip 30 are removed from the magnetic sensor.
  • FIG. 4 is a schematic perspective view showing a state in which the magnetic material layers M1 and M2 are removed from the sensor chip 10.
  • FIG. 5 is an xz cross-sectional view showing a main part of the sensor chip 10.
  • FIG. 6 is a schematic perspective view showing the structure of the MEMS chip 30 as viewed from the back surface side.
  • FIG. 1 is a schematic perspective view showing the appearance of a magnetic sensor according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic perspective view showing a state in which the MEMS chip 30 is removed from the magnetic sensor.
  • FIG. 3 is a schematic perspective view showing a
  • FIG. 7 is a schematic plan view showing the structure of the MEMS chip 30 as viewed from the main surface side.
  • FIG. 8 is a schematic diagram for explaining the positional relationship between the MEMS chip 30, the external magnetic materials 21 and 22, the magnetic material layers M1 and M2, and the magnetic sensing element R.
  • FIG. 9 is a cross-sectional view for explaining the structure of the piezoelectric structure P.
  • FIG. 10 is a schematic perspective view showing a state in which the displacement region 31 is displaced.
  • FIG. 11 is a schematic plan view showing the structure of the MEMS chip 30A according to the first modification.
  • FIG. 12 is a schematic perspective view showing the structure of the MEMS chip 30B according to the second modification.
  • FIG. 13 is a schematic perspective view showing the structure of the MEMS chip 30C according to the third modification.
  • FIG. 14 is a schematic view of a conventional magnetic sensor having a MEMS structure.
  • FIG. 1 is a schematic perspective view showing the appearance of a magnetic sensor according to a preferred embodiment of the present invention.
  • the magnetic sensor according to the present embodiment includes a circuit board 6 whose main surface is the xz surface, and sensor chips 10, first and second external surfaces mounted on the main surface of the circuit board 6. It includes magnetic materials 21 and 22, and a MEMS chip 30.
  • FIG. 2 shows a state in which the MEMS chip 30 is removed, and the tip portion of the first external magnetic body 21 in the x direction and the tip portion of the second external magnetic body 22 in the x direction are the first. It forms a magnetic gap G1.
  • the sensor chip 10 has an element forming surface 11 constituting an xy surface.
  • a magnetic sensitive element R, magnetic material layers M1 and M2, and terminal electrodes T11 to T14 are formed on the element forming surface 11.
  • the magnetic sensing element R is provided at a position overlapping the second magnetic gap G2 formed by the magnetic material layers M1 and M2 (when viewed from the z direction) in a plan view. With this configuration, the magnetic field in the x direction is selectively magnetized, and the magnetic field collected is applied to the magnetic sensing element R.
  • the external magnetic materials 21 and 22 play a role of collecting magnetic flux on the sensor chip 10, and all of them are made of a high magnetic permeability material such as ferrite.
  • the external magnetic bodies 21 and 22 are all plate-shaped bodies having the x direction as the longitudinal direction.
  • the external magnetic bodies 21 and 22 are separate members from the sensor chip 10, and are fixed to the circuit board 6 together with the sensor chip 10. Further, the tip portions of the external magnetic bodies 21 and 22 are provided with notches so as not to interfere with the terminal electrodes T11 to T14.
  • the external magnetic material 21 covers a part of the magnetic material layer M1 without covering the magnetic material layer M2, and the external magnetic material 22 does not cover the magnetic material layer M1 and covers the magnetic material layer M2. It covers a part of.
  • the distance between the sensor chip 10 and the external magnetic materials 21 and 22 in the z direction is preferably as small as possible, and more preferably in close contact with each other.
  • an adhesive is used with the sensor chip 10 and the external magnetic materials 21 and 22 in close contact with each other, instead of interposing an adhesive between them. It is preferable to fix these to the substrate 6.
  • FIG. 4 is a schematic perspective view showing a state in which the magnetic material layers M1 and M2 are removed from the sensor chip 10.
  • the magnetic sensitive element R extends in the y direction on the element forming surface 11, one end thereof is connected to the terminal electrode T11 via the wiring L1, and the other end is connected to the terminal electrode T11 via the wiring L2. It is connected to the electrode T12.
  • the magnetic sensing element R is not particularly limited as long as it is an element whose electrical resistance changes depending on the direction of magnetic flux, and for example, an MR element or the like can be used.
  • the fixed magnetization direction of the magnetic sensing element R is the x direction.
  • the terminal electrodes T13 and T14 are connected to a compensation coil (not shown). The compensation coil is used to perform so-called closed-loop control by canceling the magnetic field applied to the magnetic sensing element R.
  • FIG. 5 is an xz cross-sectional view showing a main part of the sensor chip 10.
  • a magnetic sensing element R is formed on the element forming surface 11 of the sensor chip 10.
  • the magnetic sensing element R is covered with an insulating layer 12, and magnetic layers M1 and M2 made of permalloy or the like are formed on the surface of the insulating layer 12. Then, in a plan view (viewed from the z direction), the magnetic sensing element R is located between the magnetic material layer M1 and the magnetic material layer M2. As a result, a magnetic field passing through the magnetic gap G2 is applied to the magnetic sensing element R.
  • the magnetic sensitive element R is located between the magnetic material layers M1 and M2 in a plan view, and the magnetic gap G2 is in the vicinity of the magnetic gap G2 composed of the magnetic material layers M1 and M2. It suffices if the magnetic sensing element R is arranged on the formed magnetic path. Further, the relationship between the width of the magnetic gap G2 and the width of the magnetic sensing element R is not particularly limited. In the example shown in FIG. 5, the width Gx of the magnetic gap G2 in the x direction is narrower than the width Rx of the magnetic sensor R in the x direction, whereby the magnetic material layers M1 and M2 and the magnetic sensor R are viewed from the z direction. Have an overlapping OV.
  • FIG. 6 is a schematic perspective view showing the structure of the MEMS chip 30 as viewed from the back surface side. Further, FIG. 7 is a schematic plan view showing a structure of the MEMS chip 30 as viewed from the main surface side.
  • FIG. 8 is a schematic diagram for explaining the positional relationship between the MEMS chip 30, the external magnetic materials 21 and 22, the magnetic material layers M1 and M2, and the magnetic sensing element R.
  • the MEMS chip 30 is a chip made of silicon or the like, and as shown in FIGS. 6 to 8, the main surface 30a constituting the xy surface is located on the opposite side of the main surface 30a, and the membrane portion 30c is formed. It has a back surface 30b.
  • the membrane portion 30c is a region where the thickness in the z direction is selectively reduced. With such a membrane structure, the membrane portion 30c can be displaced in the z direction.
  • the membrane portion 30c includes a displacement region 31 partitioned by two slits SL11 and SL12, and a support region 32 partitioned by four slits SL21 to SL24 surrounding the displacement region 31.
  • Four slits SL31 to SL34 are formed on the outer side of the support area 32, and the area partitioned by the slits SL31 to SL34 also constitutes a part of the support area 32.
  • the support region 32 includes a first connecting portion 32a connected to one end of the displacement region 31 in the x direction and a second connecting portion 32b connected to the other end of the displacement region 31 in the x direction.
  • the displacement region 31 is elastically supported at two points. With such a double-sided structure, the support region 32 can stably support the displacement region 31.
  • a laminate BP of the piezoelectric structure P and the bypass magnetic material layer B is formed at a position overlapping the displacement region 31, and a plurality of piezoelectric structures P are formed at a position overlapping the support region 32. It is formed.
  • the structure of the piezoelectric structure P is as shown in FIG. 9, and is composed of a piezoelectric layer 41 made of a piezoelectric material such as PZT and electrode layers 42 and 43 formed on both sides thereof.
  • the bypass magnetic material layer B is a metal foil made of a high magnetic permeability material such as permalloy, and is laminated on the surface of the piezoelectric structure P to form a laminated body BP.
  • the piezoelectric structure P and the bypass magnetic material layer B can be formed on the main surface 30a of the MEMS chip 30 by using a semiconductor process. That is, after forming the piezoelectric structure P and the bypass magnetic material layer B on the main surface 30a side of the chip made of silicon or the like by using a semiconductor process, the membrane portion 30c is formed by etching from the back surface 30b, and further.
  • the MEMS chip 30 can be manufactured by forming a plurality of slits SL11, SL12, SL21 to SL24, and SL31 to SL34.
  • the MEMS chip 30 having such a structure is fixed on the substrate 6 so that the laminated body BP provided in the displacement region 31 overlaps with the magnetic gap G1.
  • the distance between the MEMS chip 30 and the external magnetic materials 21 and 22 in the z direction is preferably as small as possible, and more preferably in close contact with each other.
  • an adhesive is used with the MEMS chip 30 and the external magnetic materials 21 and 22 in close contact with each other, instead of interposing an adhesive between them. It is preferable to fix these to the substrate 6.
  • the laminated body BP is formed so that the bypass magnetic material layer B is on the upper side, whereby the bypass magnetic material layer B and the external magnetic materials 21 and 22 are brought into close contact with each other.
  • the piezoelectric layer 41 is deformed, so that the displacement region 31 is displaced in the z direction, and the distance between the magnetic gap G1 and the bypass magnetic layer B changes. That is, when the driving voltage is not applied to the electrode layers 42 and 43, the displacement region 31 is flat, and the bypass magnetic layer B and the external magnetic bodies 21 and 22 are in contact with each other or are very close to each other. It is kept in a state. Therefore, of the magnetic field taken in through the external magnetic materials 21 and 22 in this state, a part is applied to the magnetic sensing element R via the magnetic material layers M1 and M2, but most of the magnetic field is in the displacement region.
  • bypassing the bypass magnetic material layer B formed on 31 is bypassed. That is, the magnetic gap G1 is magnetically short-circuited. Since the magnetic field component bypassed by the bypass magnetic material layer B is not applied to the magnetic sensing element R, the detection sensitivity of the magnetic sensor is lowered.
  • the piezoelectric layer 41 contracts, so that the displacement region 31 and the magnetic gap G1 are displaced in the z direction so as to be separated from each other as shown in FIG.
  • the bypass magnetic material layer B formed on the displacement region 31 is separated from the magnetic path formed by the magnetic gap G1, so that the magnetic field taken in through the external magnetic materials 21 and 22 is large.
  • the portion is applied to the magnetic sensing element R, and the magnetic field passing through the bypass magnetic material layer B becomes small. Therefore, the detection sensitivity of the magnetic sensor is high.
  • the output signal of the magnetic sensing element R is amplitude-modulated with the frequency of the drive voltage as the sampling frequency. Then, by demodulating the amplitude-modulated output signal, it is possible to obtain a measurement result in which 1 / f noise is reduced.
  • the frequency component of the magnetic field to be measured is in a low frequency band such as 0.1 Hz to 1 kHz, the S / N ratio is lowered by 1 / f noise, so that the magnetic field to be measured is particularly weak. It becomes difficult to measure.
  • the output signal can be amplitude-modulated at an arbitrary sampling frequency. Therefore, for example, by setting the sampling frequency to several kHz, the influence of 1 / f noise can be almost eliminated. It will be possible.
  • the position where the piezoelectric structure P is formed is not particularly limited as long as the displacement region 31 can be displaced in the z direction, and may be formed only in the displacement region 31 or only in the support region 32. It doesn't matter.
  • the amount of displacement of the displacement region 31 is increased by forming the piezoelectric structure P in both the displacement region 31 and the support region 32.
  • the magnetic sensor according to the present embodiment includes the MEMS chip 30 that amplitude-modulates the output signal of the magnetic sensing element R, 1 / f noise can be reduced. Moreover, since the MEMS chip 30 is a different chip from the sensor chip 10, it is possible to prevent an increase in manufacturing cost and deterioration of the characteristics of the magnetic sensitive element R due to a high temperature process. Further, in the present embodiment, the sensor chip 10 and the MEMS chip 30 are not directly overlapped with each other, but external magnetic bodies 21 and 22 having a magnetic gap G1 are interposed between the sensor chip 10 and the MEMS chip 30. , It is possible to greatly improve the selectivity of the magnetic field in the x direction.
  • FIG. 11 is a schematic plan view showing the structure of the MEMS chip 30A according to the first modification.
  • the MEMS chip 30A shown in FIG. 11 differs from the above-mentioned MEMS chip 30 in that slits SL41 to SL44 extending diagonally from the ends of the slits SL21 to SL24 are added. If such slits SL41 to SL44 are provided, the amount of displacement in the displacement region 31 can be further increased.
  • FIG. 12 is a schematic perspective view showing the structure of the MEMS chip 30B according to the second modification.
  • the MEMS chip 30B shown in FIG. 12 is different from the above-mentioned MEMS chip 30 in that the slits SL21 to SL24 are omitted.
  • the support region 32 has a double structure including a region surrounded by the slits SL21 to SL24 and a region surrounded by the slits SL31 to SL34.
  • FIG. 13 is a schematic perspective view showing the structure of the MEMS chip 30C according to the third modification.
  • the MEMS chip 30C shown in FIG. 13 has slits SL51, SL52, SL61 to SL64, SL71, SL72, SL81, SL82, and the displacement region 31 is elastically supported at six points by the support region 32.
  • the number and shape of the slits are not particularly limited as long as the displacement region 31 can be displaced in the z direction.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

Le problème décrit par la présente invention est la réduction de la taille 1/f d'un capteur magnétique. La solution selon la présente invention concerne un capteur magnétique comportant : une puce de capteur (10) qui comprend un élément magnétosensible (R) ; des corps magnétiques externes (21, 22) qui forment un espace magnétique (G1) ; et une puce MEMS (30). La puce MEMS (30) comprend une région de déplacement (31) qui chevauche l'espace magnétique (G1), et une région de support (32) qui supporte élastiquement la région de déplacement (31). La région de déplacement (31) comprend une couche de corps magnétique de dérivation (B), la région de déplacement (31) et/ou la région de support (32) comprend une couche de corps piézoélectrique (41), et la distance entre l'espace magnétique (G1) et la couche de corps magnétique de dérivation (B) varie en raison de la tension appliquée à la couche de corps piézoélectrique (41). Dans la présente invention, la puce de capteur (10) et la puce MEMS (30) sont des puces distinctes, et par conséquent le coût de fabrication peut être supprimé, et la taille de 1/f peut être réduite tout en empêchant la détérioration des caractéristiques de l'élément magnétosensible en raison de procédés à haute température.
PCT/JP2020/045212 2019-12-27 2020-12-04 Capteur magnétique WO2021131606A1 (fr)

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JP2019-238258 2019-12-27
JP2019238258A JP2021105601A (ja) 2019-12-27 2019-12-27 磁気センサ

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Cited By (3)

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EP4166968A1 (fr) * 2021-10-18 2023-04-19 TDK Corporation Capteur magnétique
EP4166969A1 (fr) * 2021-10-18 2023-04-19 TDK Corporation Capteur magnétique
EP4231030A1 (fr) * 2022-02-17 2023-08-23 TDK Corporation Capteur magnétique

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JP2023020249A (ja) * 2021-07-30 2023-02-09 Tdk株式会社 磁気センサ

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EP4166968A1 (fr) * 2021-10-18 2023-04-19 TDK Corporation Capteur magnétique
EP4166969A1 (fr) * 2021-10-18 2023-04-19 TDK Corporation Capteur magnétique
EP4231030A1 (fr) * 2022-02-17 2023-08-23 TDK Corporation Capteur magnétique

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